KR20180115858A - Substrate procesing apparatus and control method thereof - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and a control method thereof. The substrate processing apparatus comprises: a first polishing unit for polishing a first substrate; a thickness measuring unit for measuring thickness information of the first substrate; and a polishing control unit for controlling polishing on a second substrate to be processed next to the first substrate in the first polishing unit based on thickness deviation information between target thickness information of the first substrate and thickness information of the first substrate after polishing. Accordingly, the substrate polishing thickness is accurately controlled, and the polishing quality is improved.

Description

[0001] SUBSTRATE PROCESSING APPARATUS AND CONTROL METHOD THEREOF [0002]

The present invention relates to a substrate processing apparatus and a control method thereof, and more particularly, to a substrate processing apparatus and a control method thereof capable of accurately controlling the polishing thickness of the substrate and improving the polishing efficiency.

Generally, a chemical mechanical polishing (CMP) process is a process in which a surface of a substrate is flattened to a predetermined thickness by performing mechanical polishing while rotating a substrate such as a wafer in contact with a rotating polishing plate to be.

1 and 2, the chemical mechanical polishing apparatus 1 is configured such that the polishing head 11 is rotated by the polishing head 20 while rotating the polishing pad 11 in a state of covering the polishing pad 11 thereon, (W) is pressed against the surface of the polishing pad (11) while rotating to polish the surface of the wafer (W) flat. A conditioner 30 is provided for modifying the surface of the polishing pad 11 while being rotated 30r so that the surface of the polishing pad 11 is kept constant and a slurry for performing chemical polishing on the surface of the polishing pad 11 is supplied to the slurry supply pipe 40 ).

At the same time, the polishing pad 11 is provided with a thickness sensor 50 for measuring the thickness of the polishing layer of the wafer W. The thickness sensor 50 rotates together with the polishing pad 11, The thickness of the polishing layer of the wafer W is measured from the received signal. A transparent window penetrating the polishing pad 11 and the polishing platen 11 may be provided below the wafer W and an output signal including the polishing layer thickness information from the wafer W And measures the thickness of the polishing layer of the wafer W.

When the polishing layer of the wafer W is formed of a metal such as tungsten, which is a conductive material, the thickness sensor 50 includes a sensor coil disposed adjacent to the polishing layer of copper or the like and applies an alternating current Si), an eddy current input signal that forms an eddy current is emitted to the wafer polishing layer. As shown in Fig. 3, from the fluctuation value of the composite impedance and the phase difference of the eddy current 50E induced in the conductive polishing layer, W) of the polishing layer.

However, during the chemical mechanical polishing process, the polishing layer Le of the wafer W is polished and the polishing pad 11 made of the worn material is also finely worn and the thickness thereof is fluctuated. Particularly, since the tolerance of the target thickness adjustment of the wafer polishing layer Le is very small, such as several tens of angstroms to several hundreds of angstroms, the thickness distribution of the wafer polishing layer Le and the polishing There is a great possibility that the end point is erroneously recognized.

In the prior art, during the chemical mechanical polishing process, the thickness of the polishing layer Le of the wafer W is sensed in real time, and the wafer W is polished by the polishing head 20 according to the thickness distribution of the polishing layer Le. There has been an attempt to control the thickness variation of the polishing layer Le of the wafer W by controlling the pressing force to pressurize the wafer W. The thickness of the polishing layer Le of the wafer W is measured within a short polishing time, It is practically very difficult to control the pressing force by the polishing head 20, and there is a limit in that the problem that irregular thickness deviation of the wafer polishing layer is caused can not be solved.

Particularly, as shown in FIGS. 4 and 5, when the thickness distribution is not uniform (tc ≠ te, tc '≠ te') when the polishing layer Le is initially deposited on the substrate of the wafer W, It is difficult to precisely control the thickness distribution of the abrasive layer Le during the chemical mechanical polishing process.

To this end, in recent years, various studies have been made to accurately control the polishing thickness of the substrate and to improve the polishing efficiency, but there is still insufficient and development thereof is required.

An object of the present invention is to provide a substrate processing apparatus and a control method thereof that can precisely control the polishing thickness of the substrate and improve the polishing efficiency.

In particular, it is an object of the present invention to measure the thickness of a substrate before and after polishing of the substrate, to reflect the data on the thickness information of the substrate to the polishing process of the substrate to be processed next time, .

Another object of the present invention is to control the thickness variation of the substrate uniformly and improve the polishing quality.

It is another object of the present invention to precisely measure the thickness distribution of a substrate and accurately control the thickness variation of the substrate according to the thickness distribution of the substrate.

Another object of the present invention is to control the polishing conditions of the substrate for each region of the substrate based on the thickness distribution of the substrate measured before polishing the substrate.

Another object of the present invention is to shorten the polishing time of the substrate and increase the polishing efficiency.

According to a preferred embodiment of the present invention, a substrate processing apparatus includes a first polishing unit for polishing a first substrate, a thickness measuring unit for measuring thickness information of the first substrate, An abrasive agent unit for controlling the abrasion for the second substrate to be processed next to the first substrate in the first abrasive unit based on the thickness deviation information between the target thickness information of the first substrate and the target substrate thickness information of the first substrate .

This is to accurately control the polishing thickness of the substrate and to improve the polishing quality by measuring the thickness of the polished substrate and reflecting data on the thickness information of the substrate to the polishing process of the substrate to be processed subsequently.

Best Mode for Carrying Out the Invention The present invention is based on the knowledge of the thickness deviation information of whether or not the abraded first substrate has been polished to the target thickness precisely, By allowing the polishing conditions to be controlled by the thickness deviation information, it is possible to obtain an advantageous effect of polishing the second substrate to an intended accurate thickness without any deviation.

That is, at the time of polishing the first substrate, it is difficult for the first substrate to be accurately polished to a target target thickness due to polishing environment variables such as a thickness sensor error, an error due to a temperature change, and the like. For example, the thickness of the first substrate should be 20 Å (target thickness information) after polishing. However, when the thickness of the first substrate is measured after the completion of polishing, the thickness of the first substrate is 22 Å . Such a thickness difference (2 Å, thickness deviation information) is caused by a sensor error for measuring the thickness before polishing of the first substrate, an error in the amount of polishing due to a temperature change, and the like, The same is true for polishing. Therefore, the present invention can control the polishing conditions for the next processed substrate (second substrate) to be processed next to the first substrate based on the thickness variation information of the first substrate, An advantageous effect of polishing the processed substrate to an intended accurate thickness and improving the polishing quality can be obtained.

Furthermore, the present invention is not limited to polishing the substrate, but may be performed before and after polishing of the substrate by measuring the thickness of the first substrate to obtain thickness deviation information of the first substrate, It is possible to obtain an advantageous effect of increasing the accuracy of the basic data (thickness deviation information) necessary for controlling the conditions.

In other words, since the thickness of the substrate must be measured in the state where the substrate is in contact with the polishing pad (during polishing), there is a problem that the mounting of the sensor for measuring the thickness of the substrate is restricted, There is a problem that it is difficult to measure simultaneously. Further, since the thickness of the substrate is measured at the lower portion of the polishing pad during the polishing process, it is difficult to accurately measure the thickness distribution of the substrate due to the error (change in distance between the sensor and the substrate) Since the substrate rotates at the same time as the polishing pad rotates, it is difficult to measure the thickness distribution in the circumferential direction of the substrate. However, in the present invention, an in-situ method is employed in which polishing of a substrate is carried out, but before and after the polishing of the substrate is carried out, an ex- Is measured, the entire thickness of the substrate can be measured at the same time without being restricted by the mounting of the sensor for measuring the thickness of the first substrate. The thickness variation of the polishing pad It is possible to accurately measure the thickness distribution of the substrate without any errors caused by the polishing environment variables such as the thickness of the substrate, and to obtain an advantageous effect of accurately measuring the circumferential thickness distribution of the substrate.

More specifically, the thickness measuring section may include: a first thickness measuring section that measures thickness pre-polishing information of the first substrate before the polishing of the first substrate is performed; a first thickness measuring section that polishes the first substrate after the polishing of the first substrate is completed And the thickness variation information is obtained by comparing the thickness information of the first substrate with the thickness information of the first substrate and the target thickness information of the first substrate with respect to the thickness information of the first substrate before polishing.

Here, measuring the thickness information of the second thickness measuring unit is defined as a concept including both measurement of the thickness change of the substrate and measurement of the amount of polishing of the substrate.

Preferably, the pre-polishing thickness information and the post-polishing thickness information of the first substrate include a thickness distribution of the first substrate.

Here, the thickness distribution of the first substrate refers to the thickness distribution of each region (for example, a region divided into rings) of the first substrate divided along the radial direction of the first substrate (Thickness distribution along the circumferential direction) of the first substrate divided along the circumferential direction of the first substrate (for example, a thickness distribution), and a thickness distribution (thickness distribution along the circumferential direction) for each region .

More preferably, the divided regions of the first substrate are divided along the circumferential direction of the first substrate with respect to a notch of the first substrate, and the first thickness measuring portion (second thickness measuring portion) Measure the thickness of each area divided by notches. Thus, by dividing the region of the first substrate into the plurality of divided regions with respect to the notch of the first substrate, the notches of the first substrate are arranged at 12 o'clock It is possible to obtain an advantageous effect of accurately grasping the position (divided region) of the point at which the thickness measurement is performed on the first substrate with respect to the notch, irrespective of whether the direction is toward the 3 o'clock direction.

Further, the first thickness measuring portion is provided in the loading unit in which the first substrate is loaded before polishing. More specifically, the first thickness measuring unit is configured to measure the pre-polishing thickness information of the first substrate, with the first substrate mounted on the carrier head carrying the first substrate in the loading unit.

In addition, the second thickness measuring unit is provided in the unloading unit which is unloaded after the first substrate is polished. More specifically, the second thickness measuring unit is arranged in the unloading unit, and is configured to measure thickness information of the first substrate after polishing, with the first substrate polished being mounted on the carrier head.

The first thickness measuring unit and the second thickness measuring unit may include a plurality of sensors for simultaneously measuring the thickness of each of the plurality of divided first substrates. By simultaneously measuring the thickness of each of the first substrate divided areas using a plurality of sensors in a state where the first substrate is mounted on the carrier head before the first substrate is polished, It is possible to obtain a favorable effect of shortening the time required for measurement and increasing the measurement accuracy.

Preferably, the first polishing portion is configured to polish the first substrate with the polishing amount per unit time different for each region of the first substrate, based on the pre-polishing thickness information of the first substrate. For example, in an area where the thickness is higher than that of the first substrate, the polishing amount per unit time can be increased. In some cases, it is also possible to polish the entire polished surface of the first polishing portion with a uniform polishing amount.

For example, the first polishing portion includes a carrier head for pressing the first substrate to the polishing pad, and the carrier head has a plurality of pressure chambers for applying different pressing forces to regions of the first substrate contacting the polishing pad. Thus, by applying different pressing forces to the plurality of pressure chambers, the thickness variation in the radial direction or the circumferential direction of the substrate can be eliminated.

In another example, the first polishing portion includes a conditioner that modifies the height of the polishing pad, to which the first substrate is contacted, differently for each region of the first substrate. More specifically, the conditioner is configured to condition the first contact area of the polishing pad, wherein the first one of the areas of the first substrate abuts, to a first height, and to condition a second area of the first substrate The second contact area of the abrasive pad that is in contact is configured to condition to a second height different from the first height. That is, the first contact area of the polishing pad on which the first substrate is contacted and the second contact area of the polishing pad are controlled by different pressing forces of the conditioner to increase the pressing force of the conditioner in the first contact area of the polishing pad , The first contact area of the polishing pad and the second contact area of the polishing pad can be modified to different heights by reducing the pressing force of the conditioner in the second contact area of the polishing pad. Thus, by controlling the pressing force of the conditioner for each region of the polishing pad, it is possible to control the polishing amount per unit time differently for each region of the first substrate by forming the surface height deviation of the polishing pad. In other words, the polishing amount per unit time can be increased in the region of the substrate contacting the portion having a high surface height of the polishing pad, and conversely, the polishing amount per unit time in the region of the substrate contacting the portion having a low surface height of the polishing pad can be decreased .

As another example, the first polishing portion includes a slurry supplying portion for supplying a slurry for chemical polishing while mechanical polishing is performed on the first substrate. Preferably, the slurry supply unit is configured to adjust the supply amount of the slurry to be different from each other according to the area of the first substrate. Thus, by varying the supply amount of the slurry according to the position at which the slurry is supplied according to the thickness distribution of the first substrate, it is possible to obtain an advantageous effect that the amount of polishing per unit time is controlled differently for each region of the substrate.

The first thickness measuring unit measures thickness information of the second substrate before polishing the second substrate, and the polishing apparatus controller measures thickness information of the second substrate on the basis of the thickness deviation information of the second substrate And controls polishing of the second substrate. For example, when the thickness deviation of 2 angstroms (thickness deviation information) occurs at the time of polishing the first substrate, at the time of polishing the second substrate to be processed next to the first substrate, For example, 30 angstroms), the polishing of the second substrate is performed based on the subsequent polishing data (the corrected target thickness reflecting the thickness deviation, for example, 28 angstroms) with the thickness deviation of 2 angstroms.

Preferably, the abrasive agent portion is configured to abrade the second substrate with an abrasive amount per unit time different for each region of the second substrate based on the subsequent abrasive data.

At this time, polishing the second substrate with different polishing amounts per unit time for each region of the second substrate based on the subsequent polishing data may be performed by controlling at least one of the carrier head, the conditioner, and the slurry supplying portion.

For example, in a state in which the polishing layer thickness distribution (the thickness distribution before polishing of the second substrate) with respect to the entire surface of the second substrate is obtained, in the region where the thickness of the second substrate polishing layer is larger, The pressing force applied to the pressure chamber of the carrier head can be adjusted to be larger than that in the region where the thickness of the second substrate polishing layer is measured to be smaller.

In another example, in a state in which the polishing layer thickness distribution (the pre-polishing thickness distribution) with respect to the entire surface of the second substrate is obtained, in the region where the thickness of the second substrate polishing layer is larger, the thickness of the second substrate polishing layer is The slurry supply amount can be further increased in comparison with the region to be measured which is smaller, so that the thickness of the second substrate polishing layer can be precisely adjusted to a desired distribution shape as a whole.

As another example, in a state where the polishing layer thickness distribution (the pre-polishing thickness distribution) with respect to the entire plate surface of the second substrate is obtained, the thickness of the second substrate polishing layer The thickness of the second substrate polishing layer can be precisely adjusted to a desired distribution shape by increasing the surface height of the polishing pad on which the second substrate is contacted (by decreasing the pressing force of the conditioner), as compared with the region where the second substrate polishing layer is smaller.

Further, the substrate processing apparatus according to the present invention includes a second polishing section for re-polishing the second substrate polished in the first polishing section.

Preferably, the second thickness measuring unit measures the thickness distribution of the second substrate after polishing the second substrate after the polishing of the second substrate is completed, and the second polishing unit measures the thickness distribution of the second substrate, The region divided along the radial direction of the second substrate or the region divided along the circumferential direction of the second substrate).

As described above, according to the present invention, the surface of the second substrate is re-polished in different polishing conditions for each region of the second substrate in accordance with the thickness distribution after polishing of the second substrate, Since the abrasion amount of the second substrate can be controlled differently at the same time that the second substrate is rebonded, the thickness variation of the second substrate can be quickly removed to uniformly control the thickness profile of the substrate as a whole, An advantageous effect of further improving the polishing quality can be obtained.

That is, the thickness distribution of the second substrate is measured while the second substrate is being polished, and the polishing conditions of the second substrate (for example, the pressing force of the carrier head) are controlled according to the thickness distribution of the second substrate However, since the second substrate is still polished while the thickness of the second substrate is being measured, it is possible to prevent the second substrate from remaining on the second substrate in accordance with the thickness distribution of the second substrate. It is very difficult to control the polishing conditions for each region in real time. As a result, it is difficult to uniformly control the thickness variation of the second substrate as a whole. Therefore, the present invention is characterized in that the thickness deviation of the second substrate is detected before the re-burning is performed, and when the re-burning is performed, the re-burning is carried out under the polishing condition capable of immediately removing the thickness deviation of the second substrate Thus, an advantageous effect of improving the polishing quality by uniformly controlling the thickness distribution of the second substrate can be obtained.

The second polishing unit may be provided with various structures that can polish the second substrate with different polishing conditions for each region of the second substrate. Preferably, the second polishing portion is configured to polish the second substrate with the polishing amount per unit time different from each other in the region of the second substrate, based on the post-polishing thickness distribution of the second substrate (thickness distribution after completion of the primary polishing) .

For example, the second polishing portion includes a carrier head for pressing the second substrate to the polishing pad, and the carrier head is provided with a plurality of pressure chambers for applying different pressing forces to regions of the second substrate contacting the polishing pad.

In another example, the second polishing portion includes a conditioner that modifies the height of the polishing pad to which the second substrate is contacted differently for each region of the second substrate. More specifically, the conditioner is configured to condition the first contact area of the polishing pad, wherein the first of the areas of the second substrate is in contact, to a first height, and to condition a second area of the second substrate The second contact area of the abrasive pad that is in contact is configured to condition to a second height different from the first height.

As another example, the second polishing portion includes a slurry supplying portion for supplying a slurry for chemical polishing while mechanical polishing is performed on the second substrate. At this time, the slurry supply unit is configured to adjust the supply amount of the slurry to be different according to the area of the second substrate.

According to another preferred aspect of the present invention, a method of controlling a substrate processing apparatus includes: a polishing step of polishing a first substrate; A thickness measurement step of measuring thickness information of the first substrate; A subsequent polishing step of polishing the second substrate to be processed next of the first substrate, reflecting the thickness deviation information between the target thickness information of the first substrate and the post-polishing thickness information of the first substrate; .

As described above, the present invention is based on the knowledge of the thickness deviation information of whether or not the polished first substrate is accurately polished by the target thickness of the target, so that, during the subsequent polishing of the second substrate to be processed next to the first substrate, By allowing the polishing conditions to be controlled by the thickness deviation information, it is possible to obtain an advantageous effect of polishing the second substrate to an intended accurate thickness without any deviation.

In addition, in the present invention, an in-situ method is employed in which polishing of a substrate is performed, and an ex-situ method is used to measure the thickness of the substrate before and after the polishing of the substrate is performed Is measured, the entire thickness of the substrate can be measured at the same time without being restricted by the mounting of the sensor for measuring the thickness of the first substrate. The thickness variation of the polishing pad It is possible to accurately measure the thickness distribution of the substrate without any errors caused by the polishing environment variables such as the thickness of the substrate, and to obtain an advantageous effect of accurately measuring the circumferential thickness distribution of the substrate.

More specifically, the thickness measuring step may include: a first thickness measuring step of measuring the pre-polishing thickness information of the first substrate before the polishing of the first substrate is performed; And the thickness deviation information is obtained by comparing the thickness information of the first substrate with the thickness information of the first substrate and the target thickness information of the first substrate with respect to the pre-polishing thickness information of the first substrate Loses.

Preferably, the pre-polishing thickness information and the post-polishing thickness information of the first substrate include a thickness distribution of the first substrate.

Here, the thickness distribution of the first substrate refers to the thickness distribution of each region (for example, a region divided into rings) of the first substrate divided along the radial direction of the first substrate (Thickness distribution along the circumferential direction) of the first substrate divided along the circumferential direction of the first substrate (for example, a thickness distribution), and a thickness distribution (thickness distribution along the circumferential direction) for each region .

Preferably, the divided areas of the first substrate are divided along the circumferential direction of the first substrate with respect to a notch of the first substrate, and the plurality of sensors are divided into a plurality of sensors, . Thus, by dividing the region of the first substrate into the plurality of divided regions with respect to the notch of the first substrate, the notches of the first substrate are arranged at 12 o'clock It is possible to obtain an advantageous effect of accurately grasping the position (divided region) of the point at which the thickness measurement is performed on the first substrate with respect to the notch, irrespective of whether the direction is toward the 3 o'clock direction.

Further, the first thickness measuring step is performed in a loading unit in which the first substrate is loaded before polishing. More specifically, the first thickness measuring step is carried out in a state in which the first substrate is mounted on the carrier head carrying the first substrate in the loading unit.

In addition, the second thickness measuring step is performed in the unloading unit where the first substrate is unloaded after being polished. More specifically, the second thickness measuring step is performed in a state in which the first substrate polished is mounted on the carrier head by being disposed in the unloading unit.

In the first thickness measuring step and the second thickness measuring step, the thickness is simultaneously measured for each of the divided areas of the plurality of divided first substrates. By thus measuring the thickness simultaneously for each of the plurality of divided first substrates, it is possible to obtain a favorable effect of shortening the time required for measuring the thickness distribution of the first substrate and increasing the measurement accuracy.

Preferably, in the polishing step, the first substrate is polished based on the pre-polishing thickness information of the first substrate at different polishing times per unit time of the first substrate. For example, in an area where the thickness is higher than that of the first substrate, the polishing amount per unit time can be increased. In some cases, it is possible to polish the entire polished surface of the substrate with a uniform polishing amount in the polishing step.

For example, in the polishing step, the first substrate may be polished at different polishing times per unit time of the first substrate by applying different pressing forces to the regions of the first substrate contacting the polishing pad.

In another example, in the polishing step, the height of the polishing pad, which is in contact with the first substrate, is controlled differently for each region of the first substrate, thereby polishing the first substrate with different polishing amounts per unit time of the first substrate . More specifically, in the polishing step, the first contact region of the polishing pad, where the first one of the regions of the first substrate is in contact, is conditioned to a first height and the second contact region of the second region of the second substrate, The second contact area of the polishing pad with which the area is contacted is conditioned to a second height different from the first height.

As another example, in the polishing step, a slurry for chemical polishing is supplied together while a mechanical polishing for the first substrate is performed, and a chemical mechanical polishing (CMP) process is performed. Preferably, in the polishing step, the first substrate may be polished with different polishing amounts per unit time for each region of the first substrate by controlling the supply amounts of the slurry to the regions of the first substrate to be different from each other.

The method may further include a subsequent thickness measurement step of measuring the pre-polishing thickness information of the second substrate before the polishing of the second substrate is performed. In the subsequent polishing step, the pre-polishing thickness information of the second substrate may include thickness deviation information The second substrate is polished based on subsequent polishing data. For example, when the thickness deviation of 2 angstroms (thickness deviation information) occurs at the time of polishing the first substrate, at the time of polishing the second substrate to be processed next to the first substrate, For example, 30 angstroms), the polishing of the second substrate is performed based on the subsequent polishing data (the corrected target thickness reflecting the thickness deviation, for example, 28 angstroms) with the thickness deviation of 2 angstroms.

Preferably, the subsequent polishing step is configured to polish the second substrate with the polishing amount per unit time different for each region of the second substrate based on the subsequent polishing data.

At this time, polishing the second substrate with different polishing amounts per unit time for each region of the second substrate based on the subsequent polishing data may be performed by controlling at least one of the carrier head, the conditioner, and the slurry supplying portion.

For example, in the subsequent polishing step, the pressing force applied to the pressure chamber of the carrier head is set to be larger than the area in which the thickness of the second substrate polishing layer is measured to be smaller for the area where the thickness of the second substrate polishing layer is larger The thickness of the second substrate polishing layer can be precisely adjusted to the desired distribution shape as a whole.

As another example, in the subsequent polishing step, the slurry supply amount is further increased in comparison with the region where the thickness of the second substrate polishing layer is measured to be smaller for the region where the thickness of the second substrate polishing layer is measured, The polishing layer thickness can be precisely adjusted to the desired distribution profile as a whole.

As another example, in the subsequent polishing step, as compared with the area where the thickness of the second substrate polishing layer is measured to be smaller for the area where the thickness of the second substrate polishing layer is measured, It is possible to accurately adjust the thickness of the second substrate polishing layer as a whole to a desired distribution shape by increasing the surface height (by decreasing the pressing force of the conditioner).

A second thickness measuring step of measuring a thickness distribution of the second substrate after the polishing of the second substrate is completed; and a second thickness measuring step of measuring a thickness distribution of the second substrate after polishing the second substrate, And a re-burning step of re-etching the surface of the second substrate.

Preferably, in the resurfacing step, the thickness of the second substrate is different depending on the thickness distribution of the second substrate after polishing (the region divided along the radial direction of the second substrate or the region divided along the circumferential direction of the second substrate) And the surface of the second substrate is polished by polishing conditions (polishing amounts per unit time different from each other).

As described above, according to the present invention, the surface of the second substrate is re-polished in different polishing conditions for each region of the second substrate in accordance with the thickness distribution after polishing of the second substrate, Since the abrasion amount of the second substrate can be controlled differently at the same time that the second substrate is rebonded, the thickness variation of the second substrate can be quickly removed to uniformly control the thickness profile of the substrate as a whole, An advantageous effect of further improving the polishing quality can be obtained.

That is, the thickness distribution of the second substrate is measured while the second substrate is being polished, and the polishing conditions of the second substrate (for example, the pressing force of the carrier head) are controlled according to the thickness distribution of the second substrate However, since the second substrate is still polished while the thickness of the second substrate is being measured, it is possible to prevent the second substrate from remaining on the second substrate in accordance with the thickness distribution of the second substrate. It is very difficult to control the polishing conditions for each region in real time. As a result, it is difficult to uniformly control the thickness variation of the second substrate as a whole. Therefore, the present invention is characterized in that the thickness deviation of the second substrate is detected before the re-burning is performed, and when the re-burning is performed, the re-burning is carried out under the polishing condition capable of immediately removing the thickness deviation of the second substrate Thus, an advantageous effect of improving the polishing quality by uniformly controlling the thickness distribution of the second substrate can be obtained.

The thickness deviation of the second substrate in the reflow step can be done in various ways depending on the required conditions.

For example, in the refurbishing step, the second substrate may be reprocessed at different polishing amounts per unit time for each region of the second substrate based on the thickness distribution of the second substrate after polishing.

In another example, in the refurbishing step, the height of the polishing pad contacting the second substrate based on the thickness distribution of the second substrate after polishing may be controlled differently for each region of the second substrate. More specifically, in the resurfacing step, the first contact region of the polishing pad contacting the first region of the region of the second substrate is conditioned to a first height, and the first contact region of the second substrate is conditioned to a first height The second contact area of the polishing pad where the two areas are in contact is conditioned to a second height different from the first height.

As another example, in the refurbishing step, a slurry for chemical polishing is supplied together while a mechanical polishing is performed on the second substrate, and a chemical mechanical polishing (CMP) process is performed. Preferably, in the resurfacing step, the supply amount of the slurry may be adjusted differently for each region of the second substrate.

As described above, according to the present invention, an advantageous effect of accurately controlling the polishing thickness of the substrate and improving the polishing efficiency can be obtained.

Particularly, according to the present invention, on the basis of the thickness deviation information as to whether or not the polished first substrate is accurately polished by the target thickness targeted for the next polishing of the second substrate to be processed next to the first substrate, It is possible to obtain an advantageous effect of polishing the second substrate to an intended accurate thickness without any deviation.

That is, at the time of polishing the first substrate, it is difficult for the first substrate to be accurately polished to a target target thickness due to polishing environment variables such as a thickness sensor error, an error due to a temperature change, and the like. For example, the thickness of the first substrate should be 20 Å (target thickness information) after polishing. However, when the thickness of the first substrate is measured after the completion of polishing, the thickness of the first substrate is 22 Å . Such a thickness difference (2 Å, thickness deviation information) is caused by a sensor error for measuring the thickness before polishing of the first substrate, an error in the amount of polishing due to a temperature change, and the like, The same is true for polishing. Therefore, the present invention can control the polishing conditions for the next processed substrate (second substrate) to be processed next to the first substrate based on the thickness variation information of the first substrate, An advantageous effect of polishing the processed substrate to an intended accurate thickness and improving the polishing quality can be obtained.

Furthermore, the present invention is not limited to polishing the substrate, but may be performed before and after polishing of the substrate by measuring the thickness of the first substrate to obtain thickness deviation information of the first substrate, It is possible to obtain an advantageous effect of increasing the accuracy of the basic data (thickness deviation information) necessary for controlling the conditions.

In other words, since the thickness of the substrate must be measured in the state where the substrate is in contact with the polishing pad (during polishing), there is a problem that the mounting of the sensor for measuring the thickness of the substrate is restricted, There is a problem that it is difficult to measure simultaneously. Further, since the thickness of the substrate is measured at the lower portion of the polishing pad during the polishing process, it is difficult to accurately measure the thickness distribution of the substrate due to the error (change in distance between the sensor and the substrate) Since the substrate rotates at the same time as the polishing pad rotates, it is difficult to measure the thickness distribution in the circumferential direction of the substrate. However, in the present invention, an in-situ method is employed in which polishing of a substrate is carried out, but before and after the polishing of the substrate is carried out, an ex- Is measured, the entire thickness of the substrate can be measured at the same time without being restricted by the mounting of the sensor for measuring the thickness of the first substrate. The thickness variation of the polishing pad It is possible to accurately measure the thickness distribution of the substrate without any errors caused by the polishing environment variables such as the thickness of the substrate, and to obtain an advantageous effect of accurately measuring the circumferential thickness distribution of the substrate.

Further, according to the present invention, it is possible to obtain an advantageous effect of precisely adjusting the circumferential thickness distribution of the substrate by eliminating the circumferential thickness deviation of the substrate, based on the circumferential thickness distribution of the substrate.

According to the present invention, the surface of the second substrate is re-polished in different polishing conditions for each region of the second substrate in accordance with the thickness distribution of the second substrate detected before the second substrate is polished, Since the abrasion amount of the second substrate can be controlled differently at the same time that the second substrate is rebonded, the thickness variation of the second substrate can be quickly removed to uniformly control the thickness profile of the substrate as a whole, An advantageous effect of further improving the polishing quality can be obtained.

That is, the thickness distribution of the second substrate is measured while the second substrate is being polished, and the polishing conditions of the second substrate (for example, the pressing force of the carrier head) are controlled according to the thickness distribution of the second substrate However, since the second substrate is still polished while the thickness of the second substrate is being measured, it is possible to prevent the second substrate from remaining on the second substrate in accordance with the thickness distribution of the second substrate. It is very difficult to control the polishing conditions for each region in real time. As a result, it is difficult to uniformly control the thickness variation of the second substrate as a whole. Therefore, the present invention is characterized in that the thickness deviation of the second substrate is detected before the re-burning is performed, and when the re-burning is performed, the re-burning is carried out under the polishing condition capable of immediately removing the thickness deviation of the second substrate Thus, an advantageous effect of improving the polishing quality by uniformly controlling the thickness distribution of the second substrate can be obtained.

It is possible to uniformly control the thickness variation of the substrate and to control the thickness distribution of the substrate on the two-dimensional surface of the substrate in such a manner that the thickness variation of the substrate is uniformly controlled An advantageous effect of improving the polishing quality can be obtained.

That is, if the thickness distribution is not uniform at the time of initial formation of the substrate, or if the parameters of the polishing process are controlled incorrectly, the thickness of the substrate may be varied. However, according to the present invention, different pressing forces are applied to respective surface areas of the abrasive belt in accordance with the deviation of the thickness distribution of the substrate, and the abrasion of the substrate is performed, so that the amount of polishing by each surface area can be adjusted differently, It is possible to uniformly adjust the thickness profile of the substrate as a whole and to obtain an advantageous effect of improving the polishing quality of the substrate.

In addition, according to the present invention, by controlling the pressing force by the polishing belt in real time according to the thickness distribution of the substrate during the polishing process, the deviation of the thickness of the substrate can be eliminated, An advantageous effect of uniform control can be obtained.

Further, according to the present invention, the pressing force of the polishing belt on the substrate can be uniformly maintained, thereby improving the surface uniformity (polishing uniformity) of the substrate and shortening the response speed required for polishing control.

In other words, as a method of controlling the pressing force of the polishing belt against the substrate, there is a method in which the inner surface of the polishing belt is directly pressed with a pressing body, or a fluid (for example, air or water) is sprayed onto the inner surface of the polishing belt. However, in the method of directly pressing the inner surface of the abrasive belt with the pressing body, abrasion and damage are generated on the inner surface of the abrasive belt as the pressing body directly contacts the inner surface of the abrasive belt. To control the pressing pressure of the pressing body Since the pressing force of the pressing body must be mechanically adjusted, not only the response speed according to the pressing force control is slow, but also it is difficult to finely control the pressing force. Further, in the method of spraying the fluid on the inner surface of the abrasive belt, as both side edge portions of the abrasive belt are opened to the outside, a part of the fluid ejected from the edge portion of the abrasive belt escapes to the outside from the edge portion of the abrasive belt There is a problem that it is difficult to uniformly maintain the pressing force at the edge portion of the abrasive belt. Further, in the pressurizing method using the fluid, it is difficult to keep the pressing force by the fluid constant due to the pulsating phenomenon of the pump that controls the supply amount of the fluid. In order to control the pressurizing pressure by the fluid, Therefore, there is a problem that the response speed is slow and it is difficult to control the pressing force finely. However, according to the present invention, the pressing force of the polishing belt against the substrate is formed by the pressing unit using the electromagnetic force in a non-contact manner, so that the pressing force can be uniformly maintained not only at the center portion but also at the edge portion of the polishing belt. An advantageous effect of increasing the surface uniformity of the large-area glass substrate can be obtained.

Further, according to the present invention, by controlling the pressing force of the abrasive belt by controlling the electromagnetic force, it is possible to obtain a favorable effect of shortening the response speed required for polishing control and enabling fine adjustment.

1 is a front view showing a configuration of a conventional chemical mechanical polishing apparatus,
Fig. 2 is a plan view of Fig. 1,
3 shows an eddy current output signal measured for a wafer,
Figs. 4 and 5 are diagrams showing the thickness distribution of the abrasive layer of the wafer,
6 is a view for explaining a substrate processing apparatus according to the present invention,
Fig. 7 is a view for explaining a first polishing unit, which is a substrate processing apparatus according to the present invention,
8 is a view for explaining a polishing process of the first substrate in the first polishing section,
9 is a view for explaining a polishing process of the second substrate in the first polishing section, which is a substrate processing apparatus according to the present invention,
10 and 11 are diagrams for explaining a carrier head, which is a substrate processing apparatus according to the present invention,
12 and 13 are diagrams for explaining a polishing process of a first substrate using a carrier head as a substrate processing apparatus according to the present invention,
14 is a view showing a polishing layer thickness distribution of the first substrate polished by the substrate processing apparatus according to the present invention,
15 is a view for explaining a polishing process of a second substrate using a carrier head, according to the present invention,
16 is a view showing an abrasive layer thickness distribution of a second substrate polished by the substrate processing apparatus according to the present invention,
17 and 18 are diagrams for explaining a conditioner, which is a substrate processing apparatus according to the present invention,
19 and 20 are diagrams for explaining a slurry supply unit as a substrate processing apparatus according to the present invention,
21 is a view for explaining the polishing process of the second substrate in the second polishing section, which is a substrate processing apparatus according to the present invention,
22 is a block diagram for explaining a control method of the substrate processing apparatus according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments. For reference, the same numbers in this description refer to substantially the same elements and can be described with reference to the contents described in the other drawings under these rules, and the contents which are judged to be obvious to the person skilled in the art or repeated can be omitted.

FIG. 6 is a view for explaining a substrate processing apparatus according to the present invention, and FIG. 7 is a view for explaining a first polishing section as a substrate processing apparatus according to the present invention, and FIG. 8 shows a substrate processing apparatus according to the present invention And FIG. 9 is a view for explaining a polishing process of the second substrate in the first polishing section, according to the present invention. FIG. 9 is a view for explaining the polishing process of the first substrate in the first polishing section . FIGS. 10 and 11 are views for explaining a carrier head according to the present invention, and FIGS. 12 and 13 are apparatus for processing a substrate according to the present invention, FIG. 14 is a view showing a polishing layer thickness distribution of the first substrate polished by the substrate processing apparatus according to the present invention. FIG. 15 is a view for explaining a polishing process of a second substrate using a carrier head as a substrate processing apparatus according to the present invention, and Fig. 16 is a view for explaining a polishing process of a second substrate polished by the substrate processing apparatus according to the present invention Layer thickness distribution. 19 and 20 are views for explaining a slurry supply unit as a substrate processing apparatus according to the present invention, and Figs. 17 and 18 are views for explaining a conditioner as a substrate processing apparatus according to the present invention, 21 is a view for explaining a polishing process of the second substrate in the second polishing section, according to the present invention.

6 to 21, a substrate processing apparatus 1 according to the present invention includes a first polishing section 110 for polishing a first substrate 10, a second polishing section 110 for measuring thickness information of the first substrate 10, The thickness of the first substrate 10 and the thickness of the first substrate 10 are determined based on thickness information of the thickness measurement unit 200 and the target thickness information of the first substrate 10 and the thickness information of the first substrate 10, (250) for controlling the polishing of the second substrate (10 ') to be processed next to the polishing pad (10).

More specifically, the thickness measuring unit 200 includes a first thickness measuring unit 210 for measuring thickness pre-polishing thickness information of the first substrate 10 before polishing the first substrate 10, And a second thickness measuring unit 220 for measuring thickness information of the first substrate 10 after the polishing of the first substrate 10 is completed, Can be obtained by comparing the thickness information after the polishing of the first substrate 10 with the target thickness information of the first substrate 10 with respect to the total thickness information.

The second thickness measuring unit 220 measures the thickness information of the substrate by measuring the thickness variation of the first substrate 10 or measuring the amount of polishing of the first substrate 10 .

The first thickness measuring unit 210 is provided to measure thickness information of the first substrate 10 before polishing the first substrate 10 (or the second substrate).

For reference, the substrate (first substrate or second substrate) in the present invention can be understood as an object to be polished that can be polished on the polishing pad 112, and the present invention can be limited or limited It is not. As an example, a wafer may be used as the substrate.

The measurement of the pre-polishing thickness information of the first substrate 10 before the polishing of the first substrate 10 is performed may be performed before the polishing of the first substrate 10 Is defined as measuring the thickness of the first substrate 10 in advance (before entering the pad).

Preferably, the first thickness measuring unit 210 is provided in the loading unit in which the first substrate 10 is loaded before polishing. More specifically, the first thickness measuring unit 210 measures the thickness of the first substrate 10 in a state where the first substrate 10 is mounted on the carrier head 114, which transports the first substrate 10 from the loading unit. And is configured to measure the pre-polishing thickness information.

The first thickness measuring unit 210 may be provided in various ways that can measure the thickness of the first substrate 10. The present invention is limited or limited by the structure and measurement method of the first thickness measuring unit 210 It is not.

More specifically, as the first thickness measuring unit 210, an eddy current sensor for measuring an eddy current signal including thickness information from the polishing layer 11 of the first substrate 10, and an eddy current sensor for measuring an optical signal including thickness information An optical sensor, or a laser sensor (scanner) may be used. Hereinafter, an example in which an eddy current sensor is used as the first thickness measuring unit 210 for measuring a signal including thickness information from the polishing layer 11 of the first substrate 10 will be described. In some cases, it is also possible to use a conventional contact type sensor as the first thickness measuring portion.

The eddy current sensor applies an eddy current to sense the thickness of the abrasive layer 11 of the first substrate 10 and receives an output signal (e.g., resonant frequency or synthetic impedance) from the abrasive layer 11.

The eddy current sensor includes a sensor coil (not shown), which is a shape of a hollow spiral wound n times, and receives an alternating current from a control unit, applies an input signal from the sensor coil in the form of magnetic flux, And when the thickness of the conductor varies or the distance between the conductor and the conductor changes, a resonance frequency or a composite impedance due to an eddy current generated in the conductor is received as an output signal, The thickness change and the distance to the conductor are detected.

For reference, the output signal received by the eddy current sensor is basically a reference value (default) or zero (0) because there is no decrease in the synthetic impedance when there is no conductive material. In the case of a conductive material, Is output as a reference value or a reduced size by a synthetic impedance reduction from zero. The output value of the eddy current sensor can be represented by a voltage.

Preferably, the first thickness measuring unit 210 is configured to measure the thickness distribution of the first substrate 10. The first thickness measuring unit 210 measures the thickness distribution of the first substrate 10 by dividing the thickness of the first substrate 10 by the thickness of the first substrate 10 measured by the first thickness measuring unit 210, Is defined as measuring the thickness in each of a plurality of regions.

For example, the first thickness measuring unit 210 measures a thickness distribution (thickness) of each region (for example, a ring-divided region) of the first substrate 10 divided along the radial direction of the first substrate 10 Thickness distribution along the radial direction). The first thickness measuring unit 210 may measure the thickness of each of the first substrate 10 divided in the circumferential direction of the first substrate 10 (Thickness distribution along the circumferential direction).

8 and 9, the first thickness measuring unit 210 includes a plurality of sensors 212a that simultaneously measure the thickness of each of the plurality of divided substrates of the first substrate 10.

In this manner, the first substrate 10 is mounted on the carrier head 114 before the first substrate 10 is polished, and the plurality of sensors 212a are used for each of the divided areas of the first substrate 10 By simultaneously measuring the thickness, it is possible to obtain a favorable effect of shortening the time required for measuring the thickness distribution of the first substrate 10 and increasing the measurement accuracy.

In other words, since the thickness of the substrate must be measured in the state where the substrate is in contact with the polishing pad (during polishing), there is a problem that the mounting of the sensor for measuring the thickness of the substrate is restricted, There is a problem that it is difficult to measure simultaneously. Further, since the thickness of the substrate is measured at the lower portion of the polishing pad during the polishing process, it is difficult to accurately measure the thickness distribution of the substrate due to the error (change in distance between the sensor and the substrate) Since the substrate rotates at the same time as the polishing pad 112 rotates, it is difficult to measure the thickness distribution in the circumferential direction of the substrate. However, in the present invention, the thickness distribution of the substrate is measured (ex-situ) before the polishing of the first substrate 10 is performed, not the in-situ polishing of the first substrate 10 There is an advantage in that the entire thickness of the substrate can be measured simultaneously without being restricted by the mounting of the sensor for measuring the thickness of the first substrate 10, It is possible to accurately measure the thickness distribution of the first substrate 10 without any error caused by the first substrate 10 and to obtain an advantageous effect that the thickness distribution of the first substrate 10 in the circumferential direction can be accurately measured.

More preferably, the divided regions of the first substrate 10 are divided along the circumferential direction of the first substrate 10 with reference to a notch (11 in Fig. 11) of the first substrate 10, The sensor measures the thickness of each divided region with reference to the notch of the first substrate 10. By dividing the region of the first substrate 10 into a plurality of divided regions with reference to the notch of the first substrate 10 as described above, regardless of the rotational arrangement state of the first substrate 10, for example, The position of the point at which the thickness measurement is performed on the first substrate 10 with respect to the notch 11 regardless of whether the notch 11 of the first substrate 10 faces the 12 o'clock position or the 3 o'clock direction (Divided area) can be obtained accurately.

The thickness measuring unit may be disposed in an unloading unit after the first substrate is polished and unloaded. The thickness measuring unit may measure thickness information of the first substrate polished only in the unloading unit without measuring the thickness of the first substrate before polishing, It is also possible to control the polishing conditions of the substrate to be processed next.

The first polishing part 110 is provided in the polishing part 100 to perform a chemical mechanical polishing (CMP) process on the substrate (the first substrate or the second substrate).

The polishing part may be provided in various structures capable of performing a chemical mechanical polishing process, and the present invention is not limited or limited by the structure and lay out of the polishing part.

More specifically, the polishing part 100 may be provided with a plurality of polishing tables 111 and 121, and polishing pads 112 and 122 may be attached to the upper surfaces of the polishing tables 111 and 121, Includes a carrier head (114) that presses the first substrate (10) onto a polishing pad (112).

The polishing table 100 is rotatably provided on a polishing part, and a polishing pad 112 for polishing the substrate is disposed on the upper surface of the polishing table 100. [

A chemical mechanical polishing process for the substrate is performed by the carrier head 114 pressing the substrate against the upper surface of the polishing pad 112 while the slurry is supplied to the upper surface of the polishing pad 112 by the slurry supply unit 118 .

The polishing pad 112 may be formed to have a circular disk shape, and the present invention is not limited or limited by the shape and characteristics of the polishing pad 112.

On the upper surface of the polishing pad 112, a plurality of groove patterns having a predetermined depth are formed. The groove pattern may be formed in a shape of at least one of a straight line, a curve, and a circular shape. Hereinafter, a plurality of groove patterns having a concentric circular shape with respect to the center of the polishing pad 112 are formed on the upper surface of the polishing pad 112, and the groove patterns 112 having the same width and spaced apart from each other Will be described. In some cases, the groove patterns may have different shapes, or may be formed with different widths and spacings, and the present invention is not limited or limited by the shapes and arrangements of the groove patterns.

The carrier head 114 is configured to move along a predetermined circulation path on the polishing part 100 area and the substrate 10 supplied to the loading unit (the substrate supplied to the loading position) Lt; RTI ID = 0.0 > 114 < / RTI > Hereinafter, an example will be described in which the carrier head 114 is configured to move from a loading unit to a circulating path of a substantially rectangular shape through the polishing platen 110. [

For example, the polishing part 100 includes a first polishing area 101 in which a first polishing table and a second polishing table are arranged, and a second polishing table 101 facing the first polishing area 101, The substrate 10 loaded in the loading area P1 is polished in the first polishing area 101 or the second polishing area 102 and then transferred to the carrier head 114 and unloaded to the unloading area P2.

10, the carrier head 114 includes a main body 114a that rotates in conjunction with a drive shaft (not shown), a base 114b that is connected to the main body 114a and rotates together, A membrane 114c of an elastic flexible material (for example, urethane) fixed to the base 114b and forming a plurality of pressure chambers C1 to C3 and a pressure control unit (Not shown).

The main body 114a is rotatably driven by coupling the upper end to a drive shaft not shown in the figure. The main body 114a may be formed as a single body, but may have a structure in which two or more members (not shown) are coupled to each other.

The base 114b is arranged coaxially with respect to the main body 114a and connected to rotate together with the main body 114a to rotate together with the main body 114a.

The membrane 114c is mounted to the bottom surface of the carrier head 114 body 105 and is configured to press the substrate against the polishing pad 112.

11, the membrane 114c of the carrier head 114 is formed by a first partition wall 114d 'formed concentrically with respect to the center and radially dividing the first substrate 10, C2, C3 for applying different pressing forces to the radial length of the pressure chambers C1, C2, C3. At the same time, the second pressure chamber C2 and the third pressure chamber C3 located outside the radius of the first pressure chamber C1 at the center are partitioned by the second partition 114d " C32, C33, C34, C35, and C36 that apply different pressing forces to the circumferential length of the substrate 10. The pressure chambers C21, C22, C23, C24, C25,

Therefore, by applying pressure to the pressure chambers (C1, C21 to C26, C31 to C36) from the pressure regulating portion with a pressure deviation in the radial direction of the substrate (AP1> AP2> AP3) (See FIGS. 12 and 13). Further, the membrane bottom plate for pressing the substrate during the chemical mechanical polishing process can be in a state of being in close contact with the substrate It is possible to eliminate the deviation in the thickness of the polishing layer 11 in the circumferential direction of the first substrate 10 by applying different pressing forces in the circumferential direction of the first substrate 10 have.

In the figure, the second pressure chamber C1 is not provided with the second partition 114d "in the circumferential direction. However, the present invention is not limited to this, and the first pressure chamber C1 to the third pressure chamber C1 And a second partition wall 114d "for partitioning in at least one of the pressure chambers C3 in the circumferential direction is formed.

The thickness of the abrasive layer 11 on the entire surface of the first substrate 10 is obtained and the thickness of the substrate abrasive layer 11 is set to be larger than the thickness of the substrate abrasive layer 11 The pressing force applied to the pressure chamber of the carrier head 114 can be adjusted to be larger than that of the smaller measured area to precisely adjust the thickness of the substrate polishing layer 11 as a whole to a desired distribution shape.

That is, the pressure chambers C1 to C3 of the carrier head 114 are not only partitioned by the first partition 114d 'along the radial direction but also partitioned by the second partition 114d " Even if the thickness of the abrasive layer 11 is not uniform from the time of deposition on the substrate, it is possible to obtain a desired thickness distribution at the end of the chemical mechanical polishing process (for example, a uniformly uniform thickness distribution, The thickness distribution of the substrate polishing layer 11 is uniformly adjusted with respect to the two-dimensional plate surface during the chemical mechanical polishing process, and the polishing process is performed in accordance with the desired thickness distribution of the polishing layer 11. [ And an advantageous effect of improving the polishing quality can be obtained.

The first polishing part 110 is provided on the polishing pad 112 and includes a conditioner 116 for modifying the surface of the polishing pad 112.

That is, the conditioner 116 finely cuts the surface of the polishing pad 112 so as to prevent clogging of a large number of foam micropores serving as a slurry in which a slurry containing a mixture of an abrasive and a chemical is coated on the surface of the polishing pad 112, The slurry filled in the foam pores of the carrier head 112 can be smoothly supplied to the substrate held by the carrier head 114.

The conditioner 116 may be formed in various structures that can modify the surface of the polishing pad 112 and the type and structure of the conditioner 116 may be variously changed according to required conditions and design specifications.

17, the conditioner 116 includes a conditioner arm 116a mounted on an arm of a conditioner 116 pivoting in a predetermined angular range, and a conditioner arm 116a movably mounted on the conditioner arm 116a in a vertical direction And a conditioning disk 116c disposed on the bottom surface of the disk holder 116b and is configured to pivotally move with respect to the polishing pad 112 along the swivel path.

The disc holder 116b may be configured to rotate by a rotation axis (not shown) that is rotatably mounted on the conditioner arm 116a, and the structure of the rotation axis may be variously changed according to required conditions and design specifications .

The disc holder 116b is provided so as to be movable along the vertical direction with respect to the rotary shaft so as to rotate together with the rotary shaft and to move in the vertical direction with respect to the rotary shaft. The disc holder 116b is provided with a polishing pad 112 A conditioning disk 116c for modifying is incorporated.

Preferably, the conditioner 116 is configured to modify the height of the polishing pad 112 contacting the first substrate 10 differently according to the area of the first substrate 10.

More specifically, the conditioner 116 is configured to condition the first contact area of the polishing pad 112, which first region of the first substrate 10 contacts, to a first height, The second contact region of the polishing pad 112, where the first region of the region and the second region of different thickness are in contact, is configured to condition at a second height different from the first height.

The first contact area of the polishing pad 112 and the second contact area of the polishing pad 112 on which the first substrate 10 is contacted are different from each other by controlling the pressing force of the conditioner 116 differently. 18, the pressing force of the conditioner 116 in the first contact area Z2 of the polishing pad 112 is increased and the pressing force of the conditioner 116 in the second contact area Z1 of the polishing pad 112 is increased, By reducing the pressing force, the first contact area Z2 of the polishing pad 112 and the second contact area Z1 of the polishing pad 112 can be modified to different heights.

As described above, it is possible to reduce (flatten) the surface height deviation of the polishing pad 112 by controlling the pressing force of the conditioner 116 for each region of the polishing pad 112, It is possible to control the amount of polishing per unit time differently for each region of the first substrate 10 by forming a deviation in surface height. In other words, the amount of polishing per unit time can be increased in the region of the substrate contacting the portion Z1 having a high surface height of the polishing pad 112. On the other hand, The amount of polishing per unit time can be lowered in the region of the substrate to be processed.

The first polishing portion 110 also includes a slurry supply portion 118 for supplying a slurry for chemical polishing while mechanical polishing is performed on the first substrate 10.

The slurry supply unit 118 supplies the slurry S to the polishing pad 112 from the slurry storage unit. Preferably, the slurry supply 118 is configured to supply slurry at multiple locations of the polishing pad 112.

19 and 20, the slurry supply unit 118 includes an arm 118a extending in the direction toward the center of the polishing pad 112 and a slider 118b reciprocating along the arm 118a And a slurry supply port 118c through which the slurry S is supplied is formed in the slider 118b. In this way, by allowing the slider 118b to move along the arm 118a, the slurry S can be supplied to a plurality of positions P1 to P7 along the radial direction of the polishing pad 112. [

At this time, the slide movement of the slider 118b may be performed by various known driving means. Preferably, the arm 118a is provided with permanent magnets (not shown) alternately with N poles and S poles, and a coil can be mounted on the slider 118b. By controlling the current applied to the coil, The slider 118b can be configured to move along the arm on the principle of the motor. This minimizes the space required to move the slider 118b along the arm 118a while finely adjusting the position of the slider 118b, thereby realizing a compact configuration.

For reference, in the embodiment of the present invention, although the arm is described as being linearly arranged toward the center of the polishing pad 112, according to another embodiment of the present invention, the arm may be formed in a gentle curved shape have. The circumferential direction of the polishing pad 112 can be positioned at a position corresponding to the position of the polishing pad 112 by forming the arm along the circumferential direction of the polishing pad 112 and moving the slider along the circumferential direction of the polishing pad 112 along the arm. It is also possible to supply the slurry at the position.

By thus allowing the slurry supplied on the polishing pad 112 to be supplied at a plurality of positions spaced apart from the center of the polishing pad 112 in the radial direction for the chemical polishing of the substrate polishing layer 11, It is possible to prevent the chemical polishing from being unintentionally caused in each of the regions of the substrate, and even when the viscosity of the slurry is increased, it is possible to uniformly supply the slurry to the polishing layer 11 of the substrate It is possible to obtain a favorable effect of increasing the chemical polishing effect of the substrate.

Preferably, the slurry supply unit 118 is configured to control the supply amounts of the slurry to different areas according to the areas of the first substrate 10.

As described above, by varying the supply amount of the slurry depending on the position where the slurry S is supplied according to the thickness distribution of the first substrate 10, the amount of polishing per unit time is controlled differently for each region of the first substrate 10 It is also possible. 20, when the amount of chemical polishing at the center of rotation of the first substrate 10 is to be increased, the amount of slurry supplied at the P4 position is further increased, It is possible to increase the chemical polishing amount of the rotation center portion. At this time, since the first substrate 10 rotates during the chemical mechanical polishing process, not only the rotation center portion of the first substrate 10 but also the portion separated from the rotation center of the first substrate 10 The slurry is buried and contributes to the amount of chemical polishing. However, since the slurry that has permeated the foam microspheres of the polishing pad 112 still moves in the path passing through the center of rotation of the first substrate 10, Has the greatest influence on the chemical polishing amount of the center of rotation of the substrate.

In the embodiment of the present invention, the slurry supply section 118 supplies slurry at seven positions P1 to P7. However, the slurry supply port 118c may be formed in the polishing pad It is preferable that the number of positions where the slurry S is supplied is set to 10 or more. As a result, the supply amount of the slurry S can be differentiated and supplied at 10 or more points of the substrate contacting the polishing pad 112, so that an advantageous effect of more precisely controlling the chemical polishing amount of the substrate can be obtained.

The second thickness measuring unit 220 is provided to measure the thickness information of the first substrate 10 after the polishing of the first substrate 10 (or the second substrate) is completed.

The measurement of the thickness information of the first substrate 10 after the completion of the polishing of the first substrate 10 means that the polishing of the first substrate 10 is completed Spaced apart) of the first substrate 10. The thickness of the first substrate &

Preferably, the second thickness measuring unit 220 is provided in an unloading unit that is unloaded after the first substrate 10 is polished. More specifically, the second thickness measuring unit 220 is disposed in the unloading unit, and the thickness after the polishing of the first substrate 10, in a state where the polished first substrate 10 is mounted on the carrier head 114 Information is measured.

The second thickness measuring unit 220 may be provided in various ways that can measure the thickness of the first substrate 10. The present invention is limited or limited by the structure and measurement method of the second thickness measuring unit 220 It is not.

More specifically, as the second thickness measuring unit 220, an eddy current sensor for measuring an eddy current signal including thickness information from the polishing layer 11 of the first substrate 10, and an eddy current sensor for measuring an optical signal including thickness information An optical sensor, or a laser sensor (scanner) may be used.

Preferably, the second thickness measuring unit 220 is configured to measure the thickness of the first substrate 10 under the same conditions as the first thickness measuring unit 210. Hereinafter, an example in which an eddy current sensor is used as the second thickness measuring unit 220 for measuring a signal including thickness information from the polishing layer 11 of the first substrate 10 will be described.

Like the first thickness measuring unit 210, the second thickness measuring unit 220 is configured to measure the thickness distribution of the first substrate 10. For example, the second thickness measuring unit 220 may measure the thickness distribution of each region (for example, a ring-shaped region) of the first substrate 10 divided along the radial direction of the first substrate 10 Thickness distribution along the radial direction). The second thickness measuring unit 220 may measure the thickness distribution of each region (for example, a region divided into fan-shaped regions) of the first substrate 10 divided along the circumferential direction of the first substrate 10 (Thickness distribution along the circumferential direction).

8 and 9, the second thickness measuring unit 220 includes a plurality of sensors 222a for simultaneously measuring the thickness of each of the plurality of divided first substrates 10 in the respective divided regions.

As described above, the thickness of the first substrate 10 (ex-situ) after the polishing of the first substrate 10 is completed, not during in-situ polishing of the first substrate 10 By measuring the distribution, there is an advantage in that the entire thickness of the substrate can be measured simultaneously without being restricted by the mounting of the sensor for measuring the thickness of the first substrate 10. The thickness distribution of the first substrate 10 is measured It is possible to obtain a favorable effect of accurately measuring the thickness distribution of the substrate without any errors caused by polishing parameters such as a change in the thickness of the polishing pad 112 and the like.

The abrasive controller 250 may be configured to process the first substrate 10 after the first substrate 10 is processed in the first polishing portion 110 based on the thickness deviation information between the target thickness information and the target thickness information of the first substrate 10 To control polishing of the second substrate 10 '.

More specifically, the abrasive controller 250 determines whether or not the abraded first substrate 10 has been accurately polished by the target thickness according to the thickness distribution measured by the first thickness measuring unit 210 Based on the thickness deviation information of the first substrate 10, polishing conditions (for example, polishing per unit area of the substrate 10) are performed at the time of polishing the second substrate 10 'to be processed next to the first substrate 10 Amount) can be controlled.

That is, at the time of polishing the first substrate 10, it is difficult for the first substrate 10 to be accurately polished to the target thickness due to polishing environment parameters such as a thickness sensor error, an error due to temperature change, and the like. For example, the 'A' region of the first substrate 10 should have a thickness of 20 Å (target thickness information) after polishing. However, after the actual polishing is completed, the thickness of the 'A' region is measured. The thickness difference (2 ANGSTROM, thickness deviation information) T (T) can be obtained by dividing the thickness of the first substrate 10 by the thickness before the polishing in the 'A' region of the first substrate 10 A sensor error for measuring the thickness, an error in the amount of polishing due to a temperature change, and the like, and is also generated at the time of polishing another substrate to be processed next (the second substrate 10 ').

15, the present invention controls the polishing of the second substrate 10 'to be processed next to the first substrate 10 on the basis of the thickness deviation information (T) of the first substrate 10 do. More specifically, the pre-polishing thickness information of the second substrate 10 'is measured before the polishing of the second substrate 10', and the thickness deviation information of the second substrate 10 ' (AP1 - > AP1 ', AP2 - > AP2') reflecting the difference between the target thickness information of the first substrate 10 and the target thickness information of the first substrate 10 16, it is possible to obtain an advantageous effect of polishing the second substrate 10 'to an intended accurate thickness without any deviation.

For example, when the thickness deviation of 2 angstroms (thickness deviation information) occurs at the time of polishing the first substrate 10, at the time of polishing the second substrate 10 'to be processed next to the first substrate 10, 2) based on the subsequent polishing data (the corrected target thickness reflecting the thickness deviation, for example, 28A) by adding or subtracting a thickness deviation of 2A to the target thickness (for example, 30A) of the second substrate 10 ' ').

At this time, the pre-polishing thickness information of the second substrate 10 'may be measured in the same manner as the thickness measurement process of the first substrate 10 by the first thickness measuring unit 210.

Preferably, the abrasive controller 250 is configured to abrade the second substrate 10 'with different polishing amounts per unit time of the second substrate 10' based on the subsequent polishing data.

At this time, polishing the second substrate 10 'with different polishing amounts per unit time for each region of the second substrate 10' based on the subsequent polishing data may be performed by the carrier head 114, the conditioner 116, (118). ≪ / RTI >

For example, the thickness distribution of the polishing layer 11 (the thickness distribution before polishing of the second substrate) with respect to the entire surface of the second substrate 10 ' The pressing force applied to the pressure chamber of the carrier head 114 is adjusted to be larger than the area where the thickness of the polishing layer 11 of the second substrate 10 'is smaller, The thickness of the polishing layer 11 of the second substrate 10 'can be precisely adjusted to a desired distribution shape as a whole.

The thickness of the abrasive layer 11 of the second substrate 10 'is greater than the thickness of the abrasive layer 11 of the second substrate 10' The slurry supply amount is further increased and the thickness of the second substrate 10 'polishing layer 11 is set to be larger than that of the region where the thickness of the polishing layer 11 of the second substrate 10' And can be precisely adjusted to the desired distribution profile as a whole.

As another example, the thickness of the polishing layer 11 (thickness distribution before polishing) with respect to the entire plate surface of the second substrate 10 'may be adjusted so that the thickness of the polishing layer 11 of the second substrate 10' The height of the surface of the polishing pad 112 to which the second substrate 10 'is contacted is set to be higher than the area where the thickness of the polishing layer 11 of the second substrate 10' The thickness of the polishing layer 11 of the second substrate 10 'can be precisely adjusted to a desired distribution shape as a whole (by reducing the pressing force of the conditioner 116).

As described above, according to the present invention, by controlling the polishing of the second substrate 10 'to be processed next to the first substrate 10 based on the thickness variation information of the first substrate 10, 10 'can be accurately polished to an intended thickness and an advantageous effect of removing the thickness deviation (t) of the second substrate 10' and increasing the polishing uniformity of the second substrate 10 'can be obtained .

The substrate processing apparatus according to the present invention further includes a second polishing unit 120 for re-polishing the second substrate 10 'polished in the first polishing unit 110.

Preferably, the second thickness measuring unit 220 measures the thickness distribution of the second substrate 10 'after polishing the second substrate 10', and the second polishing unit 120 measures the thickness distribution of the second substrate 10 ' (A region divided along the radial direction of the second substrate or a region divided along the circumferential direction of the second substrate) of the second substrate 10 'according to the thickness distribution after polishing of the second substrate 10' And to repulse the surface of the second substrate 10 'under different polishing conditions. The second thickness measuring unit 220 may be disposed between the first polishing unit 110 and the second polishing unit 120 instead of the unloading unit in a manner in which the second substrate 10 ' As shown in FIG.

As described above, according to the present invention, in accordance with the thickness distribution after polishing of the second substrate 10 'previously detected before the second substrate 10' is refreshed, different polishing conditions for different regions of the second substrate 10 ' Since the surface of the second substrate 10 'is re-machined, the amount of polishing can be adjusted differently for each region of the second substrate 10' at the same time that the second substrate 10 ' The thickness variation of the substrate 10 'can be quickly removed, the thickness profile of the substrate can be uniformly adjusted as a whole, and an advantageous effect of further improving the polishing quality of the second substrate 10' can be obtained.

That is, the thickness distribution of the second substrate 10 'is measured while polishing the second substrate 10', and the thickness of the second substrate 10 'is measured according to the thickness distribution of the second substrate 10' It is possible to control the different polishing conditions (for example, the pressing force of the carrier head 114), but the replenishment of the second substrate 10 'is performed not only in a very short time but also the thickness of the second substrate 10' It is very difficult to control the polishing conditions of the second substrate 10 'in real time according to the thickness distribution of the second substrate 10' because the second substrate 10 ' So that it is difficult to uniformly control the thickness variation of the second substrate 10 'as a whole. Therefore, according to the present invention, the thickness deviation of the second substrate 10 'is detected before the re-firing is performed, and when the re-firing is performed, the polishing is started and the thickness deviation of the second substrate 10' , It is possible to obtain an advantageous effect of uniformly controlling the thickness distribution of the second substrate 10 'and improving the polishing quality.

The second polishing part 120 is provided on the polishing part 100 adjacent to the first polishing part 110 to perform a chemical mechanical polishing (CMP) process on the substrate (the first substrate or the second substrate).

The second polishing unit 120 may be provided with various structures that can polish the second substrate 10 'under different polishing conditions for each region of the second substrate 10'. Preferably, the second polishing part 120 may be formed on the second substrate 10 'in a different unit for each area of the second substrate 10', based on the thickness distribution after polishing (the thickness distribution after the first polishing) To polish the second substrate 10 'with a polishing amount per hour.

The second polishing portion 120 includes a carrier head 114 that presses the second substrate 10 'against the polishing pad 122 and the carrier head 114 is in contact with the polishing pad 122 A plurality of pressure chambers (see C1 to C3 in FIG. 11) for applying different pressing forces to the regions of the second substrate 10 'are formed.

11 to 13, the pressure chambers C1 to C3 of the carrier head 114 are separated by the membrane 114c having the first bank 114d 'and the second bank 114d " And the pressing force can be applied with the pressure deviation in the radial direction of the second substrate 10 'by the pneumatic pressure supplied to each of the pressure chambers C1, C21 to C26, C31 to C36 In addition, a pressing force can be applied to the circumferential direction of the second substrate 10 'with a pressure deviation.

The second polishing portion 120 is provided on the top of the polishing pad 122 and includes a conditioner 116 for modifying the surface of the polishing pad 122. [ At this time, the conditioner 116 is configured to modify the height of the polishing pad 122, which is in contact with the second substrate 10 ', differently according to the area of the second substrate 10'.

More specifically, the conditioner 116 conditions the first contact area of the polishing pad 122 where the first one of the areas of the second substrate 10 'contacts to a first height, and the second substrate 10' The second contact region of the polishing pad 122 contacting the first region and the second region having a different thickness is configured to condition the second contact region at a second height different from the first height. That is, the first contact area of the polishing pad 122 and the second contact area of the polishing pad 112, to which the second substrate 10 'is contacted, can be controlled by controlling the pressing force of the conditioner 116 differently, The pressing force of the conditioner 116 in the first contact area Z2 of the polishing pad 122 is increased and the pressure of the conditioner 116 in the second contact area Z1 of the polishing pad 122 is increased, The first contact area Z2 of the polishing pad 122 and the second contact area Z1 of the polishing pad 122 can be modified to different heights by reducing the pressing force of the polishing pad 122. [

As another example, the second polishing portion 120 includes a slurry supply portion 118 for supplying a slurry for chemical polishing while mechanical polishing is performed on the second substrate 10 '. At this time, the slurry supply unit 118 is configured to adjust the supply amount of the slurry differently according to the area of the second substrate 10 '. As described above, it is also possible to control the amount of polishing per unit time differently for each region of the substrate by varying the supply amount of the slurry according to the position at which the slurry is supplied according to the thickness distribution of the second substrate 10 '.

Referring again to Figure 6, the cleaning part 300 is provided on the adjacent side of the polishing part 100 to clean the foreign material remaining on the surface of the substrate 10, 10 'unloaded to the unloading area P2 .

In the present invention, cleaning of the substrate 10, 10 'in the cleaning part 300 means that the surface of the substrate 10, 10' (in particular, the polishing surface of the substrate, The polishing surface of the non-polished surface can be cleaned) as much as possible.

The cleaning part 300 may be provided with a structure capable of performing various stages of cleaning and drying processes and the present invention is not limited or limited by the structure and layout of the cleaning station constituting the cleaning part 300.

Preferably, the cleaning part 300 is physically located on the surface of the substrate 10, 10 'so as to effectively perform cleaning to remove organic matter and other foreign matter remaining on the surface of the substrate 10, 10' Contact type cleaning unit 400 that contacts and performs cleaning, and a non-contact type cleaning unit 500 that is physically in contact with the surfaces of the substrates 10 and 10 'and performs cleaning. In some cases, the cleaning part may include only one of the contact type cleaning unit and the non-contact type cleaning unit.

The contact type cleaning unit 400 may be provided in various structures physically contacting the surface of the substrate 10, 10 'and performing cleaning. Hereinafter, an example in which the contact type cleaning unit 400 includes the first contact type cleaning unit 402 and the second contact type cleaning unit 404 will be described.

In one example, the first contact type cleaning unit 402 and the second contact type cleaning unit 404 may be configured to include a cleaning brush that rotates and contacts the surface of the substrate 10.

The substrate 10, 10 'on which the polishing process has been completed can be cleaned by a pair of cleaning brushes rotating in a rotating state by a normal spindle (not shown). In some cases, the substrate may be cleaned by the cleaning brush in a fixed state without rotating. Alternatively, it is possible for only one cleaning brush to perform cleaning for only one plate surface (e.g., polishing surface) of the substrate.

While the cleaning brush is in contact with the substrate 10 or 10 'so that the cleaning effect of the cleaning brush 410 can be enhanced by the frictional contact between the cleaning brush 410 and the substrate 10, It is also possible to supply a chemical (for example, SC1, hydrofluoric acid) to the contact portion between the substrate 10 and the substrate 10 '.

The non-contact cleaning unit 500 may be provided in various structures that are physically non-contact with the surfaces of the substrates 10 and 10 'and can perform cleaning. Hereinafter, an example in which the non-contact type cleaning unit 500 includes the first non-contact type cleaning unit 502 and the second non-contact type cleaning unit 504 will be described. In some cases, it is also possible that the non-contact type cleaning unit is composed of only one cleaning unit.

The non-contact cleaning unit 500 can be configured to perform cleaning in various ways depending on the required conditions and design specifications. For example, the non-contact type cleaning unit 500 may be formed by spraying a cleaning fluid such as chemical, DIW, steam, dissimilar fluid, or the like on the surface of the substrate 10 or 10 ' Megasonic) or spraying isopropyl alcohol (IPA) onto the surface of the substrate 10 to perform cleaning.

On the other hand, in the embodiment of the present invention, the cleaning units (non-contact type cleaning units or contact type cleaning units) of the cleaning part are arranged on a single layer. However, in some cases, It is possible to provide a multi-layered structure so as to be laminated along the direction.

The adjacent sides of the cleaning part 300 may also be equipped with an Equipment Front End Module (EFEM) and may be provided with a substrate 10, 10 'to be processed (polished and cleaned) 10 ') can be carried in or out through the substrate carry-in / take-out part.

In one example, the substrates 10, 10 'may be brought into the substrate loading / unloading part in a state loaded on a front opening unified pod (FOUP), or taken out from the loading / unloading part. In some cases, it is possible for the substrate to be taken in and out by using other storage containers instead of the FOUP, and the present invention is not limited or limited by the substrate loading / unloading structure.

Hereinafter, a control method of the substrate processing apparatus constructed as described above will be described in detail.

24, a method of controlling a substrate processing apparatus according to the present invention includes a first thickness measuring step of measuring thickness before polishing of the first substrate 10 before polishing of the first substrate 10 is performed A polishing step S20 of polishing the first substrate 10 and a second thickness measuring a thickness information of the first substrate 10 after the polishing of the first substrate 10 is completed, And the thickness deviation information between the target thickness information of the first substrate 10 and the thickness information of the first substrate 10 after the first substrate 10 is measured, And a subsequent polishing step S40 of polishing the substrate 10 '.

Step 1:

First, the pre-polishing thickness information of the first substrate 10 is measured (S10)

In the first thickness measuring step (S10), the pre-polishing thickness information of the first substrate 10 is measured before the polishing of the first substrate 10 is performed.

Here, the pre-polishing thickness information of the first substrate 10 includes a thickness distribution of the first substrate 10 in each region. More specifically, in the first thickness measuring step S10, the thickness distribution of each region (for example, a region divided into a ring shape) of the first substrate 10 divided along the radial direction of the first substrate 10 (Thickness distribution along the radial direction) of the first substrate 10 or a thickness distribution (for example, a thickness distribution along the radial direction) of the first substrate 10 divided along the circumferential direction of the first substrate 10 Thickness distribution along the circumferential direction) can be measured.

Preferably, the first thickness measurement step S10 is performed in a loading unit (P1 in Fig. 6) in which the first substrate 10 is loaded before polishing. More specifically, the first thickness measurement step S10 is carried out with the first substrate 10 mounted on the carrier head 114 carrying the first substrate 10 in the loading unit.

The pre-polishing thickness information of the first substrate 10 may be measured in a non-contact manner using a conventional optical sensor, an eddy current sensor, a laser sensor (scanner), or may be measured in a contact manner using a contact type sensor .

Preferably, in the first thickness measurement step, the thickness is simultaneously measured for each of the plurality of divided regions of the first substrate 10. It is possible to obtain a favorable effect of shortening the time required for measuring the thickness distribution of the first substrate 10 and increasing the measurement accuracy by simultaneously measuring the thickness of each of the divided regions of the first substrate 10. [

In other words, since the thickness of the substrate must be measured in the state where the substrate is in contact with the polishing pad (during polishing), there is a problem that the mounting of the sensor for measuring the thickness of the substrate is restricted, There is a problem that it is difficult to measure simultaneously. Further, since the thickness of the substrate is measured at the lower portion of the polishing pad during the polishing process, it is difficult to accurately measure the thickness distribution of the substrate due to the error (change in distance between the sensor and the substrate) Since the substrate rotates at the same time as the polishing pad rotates, it is difficult to measure the thickness distribution in the circumferential direction of the substrate. However, in the present invention, by measuring the thickness distribution of the substrate ex-situ before the polishing of the substrate is performed, not the in-situ polishing of the substrate, It is possible to simultaneously measure the entire thickness of the substrate without being restricted by the mounting of the sensor for measuring the thickness of the polishing pad 112. It is possible to accurately measure the thickness distribution of the substrate without any error caused by polishing parameters such as the thickness of the polishing pad 112 And it is possible to obtain an advantageous effect that the thickness distribution in the circumferential direction of the substrate can be accurately measured.

More preferably, the divided regions of the first substrate 10 are divided along the circumferential direction of the first substrate 10 with reference to a notch (11 in Fig. 11) of the first substrate 10, The sensor measures the thickness of each divided region with reference to the notch of the first substrate 10. By dividing the region of the first substrate 10 into a plurality of divided regions with reference to the notch of the first substrate 10 as described above, regardless of the rotational arrangement state of the first substrate 10, for example, (A divided region) at which the thickness measurement is performed on the first substrate 10 with respect to the notch, regardless of whether the notch of the first substrate 10 faces the 12 o'clock direction or the 3 o'clock direction An advantageous effect of grasping can be obtained.

Step 2:

Next, the first substrate 10 is polished. (S20)

In the polishing step S20, the polishing layer 11 of the first substrate 10 is polished. In one example, in the polishing step S20, the first substrate 10 may be pressed and polished to the polishing pad 112 while being mounted on the carrier head 114. [

Preferably, in the polishing step S20, based on the pre-polishing thickness information of the first substrate 10 measured in the first thickness measuring step S10, the polishing amount per unit time of the first substrate 10 The first substrate 10 is polished.

Thus, by polishing the first substrate 10 with different polishing amounts per unit time for each region of the first substrate 10 based on the pre-polishing thickness information (thickness distribution) of the first substrate 10, The polishing amount of the first substrate 10 can be adjusted differently according to the area of the first substrate 10 at the same time as the polishing of the first substrate 10 is started so that the thickness deviation of the first substrate 10 can be quickly removed, The first substrate 10 can be uniformly adjusted and an advantageous effect of further improving the polishing quality of the first substrate 10 can be obtained.

The polishing step S20 may be performed in such a manner that the first substrate 10 can be polished under different polishing conditions for each region of the first substrate 10. [

For example, in the polishing step S20, a different pressing force is applied to each region of the first substrate 10 that contacts the polishing pad 112, so that the polishing amount per unit time of the first substrate 10 Polishing can be performed.

The height of the polishing pad 112 contacting the first substrate 10 is controlled differently for each region of the first substrate 10 in the polishing step S20 so that the height of the polishing pad 112 of the first substrate 10 The polishing can be performed at different polishing amounts per unit time for each region.

More specifically, in the polishing step S20, the first contact area of the polishing pad 112 to which the first one of the areas of the first substrate 10 is contacted is conditioned to the first height, The second contact region of the polishing pad 112 where the first region and the second region of different thickness are in contact is conditioned to a second height different from the first height. By thus forming the surface height deviation of the polishing pad 112, the polishing amount per unit time can be controlled differently for each region of the first substrate 10.

As another example, in the polishing step S20, a slurry for chemical polishing is supplied together with a chemical mechanical polishing (CMP) process while mechanical polishing is performed on the first substrate 10. In some cases, the polishing step may be performed by mechanical polishing alone.

Preferably, in the polishing step S20, the supply amount of the slurry is adjusted differently for each region of the first substrate 10, so that polishing can be performed at different polishing times per unit area of the first substrate 10 have.

Step 3:

Next, thickness information of the first substrate 10 after polishing is measured (S30)

In the second thickness measuring step S30, the thickness information of the first substrate 10 after polishing is measured after the completion of the polishing of the first substrate 10.

Here, the thickness information of the first substrate 10 after polishing refers to the thickness distribution of the first substrate 10. Preferably, in the second thickness measuring step S30, the thickness distribution of the first substrate 10 is measured in the same manner as the first thickness measuring step S10. That is, in the second thickness measuring step S30, the thickness is simultaneously measured for each of the divided regions of the first substrate 10 having been polished.

Preferably, the second thickness measuring step S30 is performed in the unloading unit (P2 in Fig. 6) in which the first substrate 10 is unloaded after being polished. More specifically, the second thickness measuring step S30 is carried out with the first substrate 10 mounted on the carrier head 114 carrying the first substrate 10 in the unloading unit.

Step 4:

Next, the second substrate 10 'to be processed next to the first substrate 10 reflects the thickness deviation information between the target thickness information of the first substrate 10 and the post-polishing thickness information of the first substrate 10, ) Is polished. (S40)

In the subsequent polishing step S40, on the basis of the thickness deviation information about whether the first substrate 10, which has been polished according to the thickness distribution measured in the first thickness measuring step S10, The second substrate 10 'to be processed next to one substrate 10 is subsequently polished.

That is, at the time of polishing the first substrate 10, it is difficult for the first substrate 10 to be accurately polished to the target thickness due to polishing environment parameters such as a thickness sensor error, an error due to temperature change, and the like. For example, the 'A' region of the first substrate 10 should have a thickness of 20 Å (target thickness information) after polishing. However, after the actual polishing is completed, the thickness of the 'A' region is measured. The thickness difference (2 ANGSTROM, thickness deviation information) T (T) can be obtained by dividing the thickness of the first substrate 10 by the thickness before the polishing in the 'A' region of the first substrate 10 A sensor error for measuring the thickness, an error in the amount of polishing due to a temperature change, and the like, and is also generated at the time of polishing another substrate to be processed next (the second substrate 10 ').

In the subsequent polishing step S40, the polishing of the second substrate 10 'to be processed next to the first substrate 10 is controlled based on the thickness deviation information? T of the first substrate 10. More specifically, before polishing the second substrate 10 ', the pre-polishing thickness information of the second substrate 10' is measured, and the pre-polishing thickness of the second substrate 10 ' (AP1? AP1 ', AP2? AP2') reflecting the thickness deviation information (the difference between the target thickness information and the post-polishing thickness information of the first substrate 10) on the second substrate 10 ', It is possible to obtain an advantageous effect of polishing the second substrate 10' with an intended accurate thickness without any deviation as shown in FIG. For example, when the thickness deviation of 2 angstroms (thickness deviation information) occurs at the time of polishing the first substrate 10, at the time of polishing the second substrate 10 'to be processed next to the first substrate 10, 2) based on the subsequent polishing data (the corrected target thickness reflecting the thickness deviation, for example, 28A) by adding or subtracting a thickness deviation of 2A to the target thickness (for example, 30A) of the second substrate 10 ' ').

Preferably, in the subsequent polishing step S40, the second substrate 10 'is polished by a polishing amount per unit time different for each region of the second substrate 10' based on the subsequent polishing data. At this time, in the subsequent polishing step S40, polishing the second substrate 10 'with different polishing amounts per unit time for each region of the second substrate 10' based on the subsequent polishing data, The pressing force for pressing the second substrate 10 'may be controlled differently for each region of the second substrate 10' or the height of the polishing pad 112 may be changed by the conditioner 116 Or by controlling the supply amount of the slurry differently according to the position where the slurry is supplied.

As described above, according to the present invention, by controlling the polishing of the second substrate 10 'to be processed next to the first substrate 10 based on the thickness variation information of the first substrate 10, 10 'can be accurately polished to an intended thickness and an advantageous effect of removing the thickness deviation (t) of the second substrate 10' and increasing the polishing uniformity of the second substrate 10 'can be obtained .

Step 5:

In addition, it may include a third thickness measuring step (S50) of measuring the thickness distribution of the second substrate 10 'after the polishing of the second substrate 10' is completed.

After the polishing of the second substrate 10 'is completed in the third thickness measuring step S50, thickness information of the second substrate 10' after polishing is measured.

Here, the thickness-after-polishing information of the second substrate 10 'includes the thickness distribution of the second substrate 10'. Preferably, in the third thickness measuring step S50, the thickness (thickness distribution) is simultaneously measured for each of the divided regions of the second substrate 10 'having been polished.

Step 6:

Next, the surface of the second substrate 10 'is polished under different polishing conditions for each region of the second substrate 10' according to the thickness distribution after polishing of the second substrate 10 '(S60)

In the refurbishing step S60, more precise polishing can be performed in the initial polishing than in the initial polishing (S40) of the second substrate 10 '.

In the refurbishing step S60, depending on the thickness distribution after polishing of the second substrate 10 'detected before the second substrate 10' is refreshed, different polishing conditions are applied to the regions of the second substrate 10 ' Since the surface of the second substrate 10 'is re-machined, the amount of polishing can be controlled differently according to the area of the second substrate 10' at the same time that the second substrate 10 ' It is possible to rapidly remove the thickness variation of the substrate 2 'and quickly adjust the thickness profile of the substrate uniformly and to obtain an advantageous effect of further improving the polishing quality of the second substrate 10'.

That is, the thickness distribution of the second substrate 10 'is measured while polishing the second substrate 10', and the thickness of the second substrate 10 'is measured according to the thickness distribution of the second substrate 10' It is possible to control the different polishing conditions (for example, the pressing force of the carrier head 114), but the replenishment of the second substrate 10 'is performed not only in a very short time but also the thickness of the second substrate 10' It is very difficult to control the polishing conditions of the second substrate 10 'in real time according to the thickness distribution of the second substrate 10' because the second substrate 10 ' So that it is difficult to uniformly control the thickness variation of the second substrate 10 'as a whole. Therefore, according to the present invention, the thickness deviation of the second substrate 10 'is detected before the re-firing is performed, and when the re-firing is performed, the polishing is started and the thickness deviation of the second substrate 10' , It is possible to obtain an advantageous effect of uniformly controlling the thickness distribution of the second substrate 10 'and improving the polishing quality.

In step S60, the thickness deviation of the second substrate 10 'may be removed in various ways depending on the required conditions.

For example, in the refurbishing step S60, different pressing forces are applied to the regions of the second substrate 10 'that are in contact with the polishing pad 122, so that different units for different regions of the second substrate 10' By performing the polishing at the polishing rate per hour, the thickness deviation of the second substrate 10 'can be eliminated.

The height of the polishing pad 122 to which the second substrate 10 'is contacted is controlled differently for each region of the second substrate 10' in the re-polishing step S60, 10 'by different polishing amounts per unit time, the thickness variation of the second substrate 10' can be eliminated. The first contact region of the polishing pad 122 to which the first region of the region of the second substrate 10 'is contacted is conditioned to the first height and the second contact region of the second substrate 10' 'Is conditioned to a second height different from the first height, the second contact region of the polishing pad 122 contacting the first region and the second region having a different thickness. By forming the surface height deviation of the polishing pad 122 in this manner, the amount of polishing per unit time is controlled differently for each region of the second substrate 10 ', thereby eliminating the thickness deviation of the second substrate 10' can do.

In another refinement step S60, a slurry for chemical polishing is supplied together with a chemical mechanical polishing (CMP) process while mechanical polishing is performed on the second substrate 10 '. In some cases, the re-polishing step may be performed by mechanical polishing alone.

Preferably, in the refurbishing step S60, the supply amounts of the slurry (see S in FIG. 19) are adjusted differently for each region of the second substrate 10 ' Polishing can be performed at the polishing amount per another unit time.

Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. It will be understood that the present invention can be changed.

10, 10 ': substrate 11: polishing layer
100: polishing part 110: first polishing part
112: polishing pad 114: carrier head
116: Conditioner 118: Slurry supply part
120: second polishing section 200: thickness measuring section
210: first thickness measuring unit 220: second thickness measuring unit
250: abrasive fisher

Claims (42)

A control method for a substrate processing apparatus,
A polishing step of polishing the first substrate;
A thickness measurement step of measuring thickness information of the first substrate;
A subsequent polishing step of polishing the second substrate to be processed next to the first substrate by reflecting the thickness deviation information between the target thickness information of the first substrate and the post-polishing thickness information of the first substrate;
And controlling the substrate processing apparatus based on the control signal.
The method according to claim 1,
The thickness measurement step may include:
A first thickness measuring step of measuring thickness pre-polishing thickness information of the first substrate before polishing is performed on the first substrate;
A second thickness measurement step of measuring thickness information of the first substrate after polishing after the polishing of the first substrate is completed; Including,
Wherein the thickness deviation information is obtained by comparing the thickness information of the first substrate with the thickness information of the first substrate and the target thickness information of the first substrate with respect to the pre-polishing thickness information of the first substrate, respectively .
3. The method of claim 2,
Wherein the pre-polishing thickness information and the post-polishing thickness information of the first substrate include a thickness distribution of the first substrate.
The method of claim 3,
Wherein the polishing step polishes the first substrate with a different polishing amount per unit time for each region of the first substrate based on the pre-polishing thickness information of the first substrate.
3. The method of claim 2,
Wherein the first thickness measuring step is performed in a loading unit in which the first substrate is loaded before polishing.
6. The method of claim 5,
Wherein the first thickness measurement step is performed in a state where the first substrate is mounted on a transfer unit that transfers the first substrate from the loading unit.
The method according to claim 6,
Wherein the first thickness measuring step measures the thickness simultaneously for each of the plurality of divided regions of the first substrate.
8. The method of claim 7,
Wherein the divided regions of the first substrate are divided along a circumferential direction of the first substrate with respect to a notch of the first substrate.
3. The method of claim 2,
Wherein the second thickness measurement step is performed in an unloading unit that is unloaded after the first substrate is polished.
3. The method of claim 2,
Wherein the second thickness measuring step is performed in a state in which the first substrate is mounted on a transfer unit that transfers the first substrate from the unloading unit.
The method according to claim 1,
Wherein the thickness measuring step is performed in an unloading unit in which the first substrate is polished and then unloaded.
3. The method of claim 2,
And a subsequent thickness measuring step of measuring the pre-polishing thickness information of the second substrate before the polishing of the second substrate is performed,
Wherein in the subsequent polishing step, the second substrate is polished based on the subsequent polishing data reflecting the thickness deviation information on the pre-polishing thickness information of the second substrate.
13. The method of claim 12,
Wherein the pre-polishing thickness information of the second substrate includes a thickness distribution of each of the regions of the second substrate.
14. The method of claim 13,
Wherein in the subsequent polishing step, the second substrate is polished with different polishing amounts per unit time for each region of the second substrate based on the subsequent polishing data.
15. The method according to any one of claims 1 to 14,
A third thickness measuring step of measuring a thickness distribution after polishing of the second substrate after the polishing of the second substrate is completed;
A step of re-polishing the surface of the second substrate with different polishing conditions for each region of the second substrate according to a thickness distribution of the second substrate after polishing;
And controlling the substrate processing apparatus based on the control signal.
16. The method of claim 15,
Wherein the second substrate is reprocessed at an abrasion amount per unit time different for each region of the second substrate in the re-burning step.
A substrate processing apparatus comprising:
A first polishing section for polishing the first substrate;
A thickness measuring unit for measuring thickness information of the first substrate;
A polishing step of polishing the second substrate to be processed next to the first substrate in the first polishing section based on the thickness deviation information between the target thickness information of the first substrate and the post-polishing thickness information of the first substrate An abrasive agent unit for controlling the abrasive agent;
The substrate processing apparatus comprising:
18. The method of claim 17,
The thickness measuring unit may include:
A first thickness measuring unit for measuring thickness pre-polishing information of the first substrate before polishing the first substrate;
A second thickness measuring unit for measuring thickness information of the first substrate after the polishing of the first substrate is completed; Including,
Wherein the thickness deviation information is obtained by comparing the thickness information of the first substrate with the thickness information of the first substrate and the target thickness information of the first substrate respectively.
19. The method of claim 18,
Wherein the first thickness measuring unit and the second thickness measuring unit measure the thickness distribution of the first substrate.
20. The method of claim 19,
Wherein the first thickness measuring unit and the second thickness measuring unit measure a thickness distribution of each of the first substrates divided along at least one of a radial direction and a circumferential direction of the first substrate, Device.
19. The method of claim 18,
Wherein the first polishing section polishes the first substrate with a polishing amount per unit time different for each region of the first substrate based on the pre-polishing thickness information of the first substrate.
22. The method of claim 21,
Wherein the first polishing portion includes a carrier head for pressing the first substrate to a polishing pad,
Wherein the carrier head is formed with a plurality of pressure chambers for applying different pressing forces to regions of the first substrate contacting the polishing pad.
22. The method of claim 21,
Wherein the first polishing unit comprises a conditioner for modifying the height of the polishing pad contacting the first substrate differently for each region of the first substrate.
24. The method of claim 23,
Wherein the conditioner is configured to condition a first contact area of the polishing pad, wherein a first one of the areas of the first substrate is in contact, to a first height and to condition a second contact area of the second area of the first substrate, Wherein the second contact area of the polishing pad with which the area is contacted is conditioned to a second height different from the first height.
19. The method of claim 18,
Wherein the first thickness measuring unit is provided in a loading unit in which the first substrate is loaded before polishing.
26. The method of claim 25,
Wherein the first thickness measuring unit measures thickness pre-polishing thickness information of the first substrate in a state in which the first substrate is mounted on the carrier head that transports the first substrate from the loading unit Device.
27. The method of claim 26,
Wherein the first thickness measuring unit includes a plurality of sensors for simultaneously measuring the thickness of each of the plurality of divided substrates of the first substrate.
28. The method of claim 27,
Wherein the divided regions of the first substrate are divided along the circumferential direction of the first substrate with respect to a notch of the first substrate.
19. The method of claim 18,
Wherein the second thickness measuring unit is provided in an unloading unit that is unloaded after the first substrate is polished.
18. The method of claim 17,
Wherein the thickness measuring unit is provided in an unloading unit in which the first substrate is polished and then unloaded.
19. The method of claim 18,
Wherein the first thickness measuring unit measures thickness pre-polishing information of the second substrate before polishing the second substrate,
Wherein the polishing agent control section controls the polishing of the second substrate based on the subsequent polishing data reflecting the thickness deviation information on the pre-polishing thickness information of the second substrate.
32. The method of claim 31,
Wherein the first thickness measuring unit measures a thickness distribution of the second substrate.
33. The method of claim 32,
Wherein the first thickness measuring unit measures a thickness distribution of the second substrate divided along at least one of a radial direction and a circumferential direction of the second substrate.
32. The method of claim 31,
Wherein the polishing tool holder polishes the second substrate at a different polishing amount per unit time for each region of the second substrate based on the subsequent polishing data.
35. The method of claim 34,
Wherein the first polishing unit includes a carrier head for pressing the second substrate to the polishing pad, wherein the carrier head has a plurality of pressure chambers for applying different pressing forces to the regions of the second substrate contacting the polishing pad Formed,
And the abrasive control unit controls the pressing force of the pressure chamber based on the subsequent polishing data.
35. The method of claim 34,
Wherein the first polishing unit includes a conditioner for modifying the height of the polishing pad contacting with the second substrate differently for each region of the second substrate,
And the abrasive controller controls the conditioner based on the subsequent polishing data.
19. The method of claim 18,
Wherein the second thickness measuring unit measures a thickness distribution of the second substrate after the polishing of the second substrate is completed,
And a second polishing unit for re-polishing the surface of the second substrate with different polishing conditions for each region of the second substrate according to a thickness distribution of the second substrate after polishing.
39. The method of claim 37,
Wherein the second thickness measuring unit measures a thickness distribution of the second substrate after polishing in at least one of a radial direction and a circumferential direction of the second substrate.
39. The method of claim 37,
Wherein the second polishing unit re-processes the second substrate with a polishing amount per unit time different for each region of the second substrate, based on the thickness distribution after polishing the second substrate.
40. The method of claim 39,
Wherein the second polishing portion includes a carrier head for pressing the second substrate to the polishing pad,
Wherein the carrier head is formed with a plurality of pressure chambers for applying different pressing forces to regions of the second substrate contacting the polishing pad.
40. The method of claim 39,
Wherein the second polishing unit includes a conditioner for modifying the height of the polishing pad contacting with the second substrate differently for each region of the second substrate.
42. The method of claim 41,
Wherein the conditioner is configured to condition a first contact area of the polishing pad, the first contact area of which is in contact with a first area of the second substrate, to a first height and to condition a second contact area of the second area of the second substrate, Wherein the second contact area of the polishing pad with which the area is contacted is conditioned to a second height different from the first height.

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