TW202343573A - Manufacturing method for a power transistor with heat dissipation function - Google Patents

Abstract

A manufacturing method for a power transistor with heat dissipation function comprises the following steps of providing a semi-product for the power transistor which includes an epitaxial substrate, an epitaxial structure, an electrode unit formed on a top surface of the epitaxial structure and connecting to a gate region of the epitaxial structure, a protection unit covering on the electrode unit, and a heat dissipating unit covering on the protection unit; removing the epitaxial substrate and exposing a bottom surface of the epitaxial structure; forming several through slots which corresponding to the electrode unit on the bottom surface; forming an extended electrode unit which connecting to the corresponding electrode unit by filling a conductive materials in the through slots. In this invention, the power transistor does not have the epitaxial substrate for epitaxial growth, so the heat generated during operation can be directly dissipated from the bottom surface without being affected by the epitaxial substrate.

Description

Method for manufacturing power transistor with heat dissipation properties

The present invention relates to a method of manufacturing a power transistor, and in particular, to a method of manufacturing a power transistor that can improve heat dissipation.

With the development of technology, the market demand for power transistors is getting higher and higher, which is used to configure high-power electronic products. Among them, high electron mobility transistors (HEMTs), which use gallium nitride as the main material, have attracted much attention due to their material properties such as low on-resistance and high breakdown voltage.

Power transistors generate a large amount of heat during operation. In order to extend the service life of the components, the industry usually installs a heat dissipation substrate or heat sink on the bottom of the epitaxial substrate of the power transistor to help dissipate the heat generated by the transistor. Drained from the bottom. However, since the heat dissipation of the substrate used for general epitaxial growth is poor and will block the heat discharge from the bottom surface, as power transistors develop towards high power, it is no longer sufficient to provide a heat dissipation substrate or heat sink. Effective heat dissipation can easily lead to reduced performance or even shortened component life of the power transistor due to poor heat dissipation.

Therefore, an object of the present invention is to provide a power transistor with heat dissipation properties.

Therefore, the power transistor with heat dissipation of the present invention includes a semiconductor epitaxial structure, an electrode unit, an extended electrode unit, a protection unit, and a heat dissipation unit.

The semiconductor epitaxial structure has a top surface, a bottom surface that are opposite to each other, a source region, a drain region, a gate region that are spaced apart from each other and formed adjacent to the top surface, and a plurality of gate regions from the bottom surface toward the top surface. Grooves extending from the surface.

The electrode unit has a source electrode, a drain electrode, and a gate electrode formed on the top surface and respectively corresponding to the source region, the drain region, and the gate region, wherein the through grooves Corresponding to the source electrode, the drain electrode, and the gate electrode respectively, the source electrode, the drain electrode, and the gate electrode can be exposed to the outside from the corresponding through grooves.

The extended electrode unit has a plurality of extended electrodes filled in the through grooves. The extended electrodes are respectively connected to the corresponding source electrode, the drain electrode, and the gate electrode, and extend to the bottom surface for External electrical connection.

The protection unit is made of insulating material and covers the electrode unit and the top surface of the semiconductor epitaxial structure exposed from between the electrode units.

The heat dissipation unit is made of heat dissipation material and covers the surface of the protection unit.

In addition, another object of the present invention is to provide a method for manufacturing a power transistor with heat dissipation properties.

Therefore, the manufacturing method of the heat-dissipating power transistor of the present invention includes a providing step, an epitaxial substrate removal step, a through-groove forming step, and an extended electrode forming step.

The providing step provides a power transistor semi-finished product. The power transistor semi-finished product includes an epitaxial substrate, an epitaxial structure formed on the surface of the epitaxial substrate, and a source formed on a side of the epitaxial structure away from the epitaxial substrate. region, a drain region, and a gate region, an electrode unit formed on the surface of the epitaxial structure and connected to the source region, the drain region, and the gate region, and an electrode unit covering the And the surface of the epitaxial structure exposed from the electrode unit is a protection unit made of insulating material, and a heat dissipation unit covering the protection unit and made of heat dissipation material.

The step of removing the epitaxial substrate is to remove the epitaxial substrate from the epitaxial structure, so that a bottom surface of the epitaxial structure is exposed opposite the electrode unit.

The step of forming through grooves is to remove a portion of the epitaxial structure from the bottom surface of the epitaxial structure and corresponding to the position of the electrode unit to expose the electrode unit to form a plurality of through grooves, thereby obtaining a semiconductor epitaxial structure. crystal structure.

The step of forming the extended electrode is to fill the through grooves with conductive material to form a plurality of extended electrodes connected to the electrode unit and extending to the bottom surface of the semiconductor epitaxial structure, and the extended electrodes are composed of the electrodes. An extended electrode unit through which the unit is electrically connected to the outside.

The effect of the present invention is to: by removing the epitaxial substrate provided on the bottom surface of the semiconductor epitaxial structure, the heat generated during the operation of the component can be directly dissipated from the bottom surface, and the arrangement of the heat dissipation unit and the heat dissipation unit formed on the The extended electrodes in the through grooves can further improve the heat dissipation capability of the power transistor.

The relevant technical contents, features and effects of the present invention will be clearly presented in the following detailed description of the embodiments with reference to the drawings. In addition, it should be noted that the drawings of the present invention only represent the relative structure and/or positional relationship between components, and are not related to the actual size of each component.

Referring to FIGS. 1 and 2 , the power transistor 200 with heat dissipation properties of the present invention includes a semiconductor epitaxial structure 2 , an electrode unit 3 , an extended electrode unit 4 , a protection unit 5 , and a heat dissipation unit 6 . In this embodiment, the power transistor 200 is a gallium nitride high electron mobility transistor as an example. Since gallium nitride itself has a high breakdown voltage and a wide energy gap, it is beneficial to operate at high operating temperatures. In this case, the generation of junction leakage current (Junction leakage current) is reduced, and it is suitable for high-power components.

The semiconductor epitaxial structure 2 has a top surface 21 and a bottom surface 22 opposite to each other, a source region 23, a drain region 24, a gate region 25 spaced apart from each other and formed adjacent to the top surface 21, and multiple A through groove 26 extends from the bottom surface 22 toward the top surface 21 .

In this embodiment, the semiconductor epitaxial structure 2 has an epitaxial buffer layer (buffer layer) composed of gallium nitride (GaN) and a nitrogen layer sequentially stacked from the bottom surface 22 to the top surface 21 . An epitaxial channel layer composed of gallium nitride (GaN), an epitaxial barrier layer composed of aluminum gallium nitride (AlGaN), and a metal contact layer composed of gallium nitride (GaN) (cap layer) For example, the source region 23 and the drain region 24 are spaced apart from each other and located on both sides of the gate region 25 . It should be noted that the epitaxial laminated structure or material of the semiconductor epitaxial structure 2 is known to those in the art and can be designed in different forms according to requirements. Therefore, it is not limited to the above or the drawings of this example. The through grooves 26 extend from the bottom surface 22 toward the top surface 21 .

The electrode unit 3 has a source electrode 31 and a drain electrode formed on the top surface 21 of the semiconductor epitaxial structure 2 and connected to the epitaxial channel layer and corresponding to the source region 23 and the drain region 24 respectively. 32, and a gate electrode 33 located on the epitaxial coating layer and corresponding to the gate region 25. The source electrode 31 , the drain electrode 32 and the gate electrode 33 are made of materials selected from metals or alloy metals, and the electrodes can be made of the same or different materials. The positions of the through grooves 26 correspond to the source electrode 31 , the drain electrode 32 , and the gate electrode 33 respectively, so that the source electrode 31 , the drain electrode 32 , and the gate electrode 33 can The corresponding through groove 26 is exposed to the outside. Wherein, the source electrode 31 and the drain electrode 32 each have a contact pad 311, 321 in ohmic contact with the semiconductor epitaxial structure 2, and a conductive layer connected to the contact pad 311, 321 and extending outward. 312, 322. The gate electrode 33 is located on the gate region 25 and has an extension section 331 extending out of the gate region 25 . A dielectric insulation layer (see FIG. 2 ) is also disposed between the extension section 331 and the gate region 25 to prevent direct contact between the gate electrode 33 and the semiconductor epitaxial structure 2 .

The through grooves 26 extend from the bottom surface 22 toward the top surface 21 and respectively correspond to the conductive layers 312 and 322 of the source electrode 31 and the drain electrode 32 and the extended sections of the gate electrode 33 331, so that the conductive layers 312, 322 and the extension section 331 are exposed to the outside from the through grooves 26.

The extended electrode unit 4 has a plurality of extended electrodes 41 filled in the through grooves 26 . The extended electrodes 41 are respectively connected with the corresponding conductive layers 312 and 322 of the source electrode 31 , the drain electrode 32 , and the conductive layers 312 and 322 of the drain electrode 32 . The extension section 331 of the gate electrode 33 is connected and extends to the bottom surface 22 for external electrical connection.

Since the extended electrodes 41 used for external connection of the power transistor 200 in this case extend to the same surface (bottom surface 22 ), it is advantageous for the power transistor 200 to be subsequently disposed in other electronic components. In this embodiment, the extended electrode units 4 are selected from metals or alloy metals, and may be made of the same or different materials as the electrode unit 3 .

The protection unit 5 is made of an insulating material and covers the electrode unit 2 and the top surface 21 of the semiconductor epitaxial structure 2 exposed from between the electrode units 2 . In this embodiment, the insulating material is selected from oxides, nitrides or oxynitrides.

The heat dissipation unit 6 is made of heat dissipation material, covers the surface of the protection unit 5, and has at least one heat dissipation layer 61, which can be selected from metals, alloy metals, or polymer mixtures containing thermal conductive additives. Wherein, the thermal conductive additive is a carbon material, nitride, or oxide, and the carbon material is selected from graphite and carbon nanotubes, the nitride of the thermal conductive additive is selected from boron nitride or silicon nitride, and the oxide is selected from Alumina. In this embodiment, the heat dissipation unit 6 has a single heat dissipation layer 6 and is selected from metal copper as an example. However, in actual implementation, the material and the number of layers are not limited to this.

Compared with the conventional power transistor that also has an epitaxial substrate disposed on the bottom surface of the semiconductor epitaxial structure, the power transistor 200 of this embodiment has the epitaxial substrate removed, so that the semiconductor epitaxial structure 2 The bottom surface 22 is directly exposed to the outside. Therefore, the heat generated when the component operates can be directly dissipated from the bottom surface 22, thereby preventing the conventional power transistor from operating due to the presence of the epitaxial substrate and the low heat dissipation of the epitaxial substrate. The problem of poor heat dissipation. In addition, the heat dissipation unit 6 made of heat dissipation material, and the extended electrodes 41 filled in the through grooves 26 and made of metal materials can also use the good heat dissipation properties of the power transistor 200 in the The heat generated during operation is dissipated outward, thereby further improving the heat dissipation capability of the power transistor 200 .

Referring to FIG. 3 , the manufacturing method of the power transistor 200 in this embodiment is described as follows.

The manufacturing method includes a providing step 81 , an epitaxial substrate removing step 82 , a through groove forming step 83 , and an extended electrode forming step 84 .

4, the providing step 81 provides a power transistor semi-finished product 300. The power transistor semi-finished product 300 includes an epitaxial substrate 7, an epitaxial structure 20 formed on the surface of the epitaxial substrate 7, and an epitaxial structure 20 formed on the surface of the epitaxial substrate 7. The source region 23 and the drain region 24 of the structure 20 are spaced apart from each other. The gate region 25 between the source region 23 and the drain region 24 is respectively connected with the source region 23 and the drain region. The electrode unit 3 connected to the electrode area 24 and the gate area 25, the protection unit 5 covering the electrode unit 3 and the surface of the epitaxial structure 20 exposed from the electrode unit 3 and made of insulating material, and Covering the protection unit 5, the heat dissipation unit 6 is made of heat dissipation material.

In detail, in this embodiment, the epitaxial substrate 7 is selected from a silicon substrate. The epitaxial structure 20 is formed on the epitaxial substrate 7 by epitaxial growth, and in this embodiment, the epitaxial structure 20 includes sequential epitaxial formation from the epitaxial substrate 7 and is formed by nitriding. The epitaxial buffer layer is composed of gallium, the epitaxial channel layer is composed of gallium nitride, the epitaxial barrier layer is composed of aluminum gallium nitride, and the epitaxial coating layer is composed of gallium nitride. Then, etching downwards from two predetermined positions spaced apart from each other on the top surface of the epitaxial layer to expose part of the epitaxial channel layer, and then using a metal material to deposit on the exposed surface of the epitaxial channel layer The contact pads 311 and 321 are formed into ohmic contact with the epitaxial channel layer. Then, a dielectric insulation layer is formed on the surface of the epitaxial coating layer. Afterwards, a deposition method is used to form the conductive layers 312 and 322 connected to the contact pads 311 and 321 and extending outward to form the source electrode 31 and the drain electrode 32. The deposition method is used to form the corresponding dielectric insulation layers. The extension section 331 is formed on the second layer to form the gate electrode 33 .

The protection unit 5 is made of oxide, nitride or oxynitride and is formed by deposition or coating to cover the electrode unit 3 and the top surface of the epitaxial structure 20 exposed between the electrode units 3 twenty one. The heat dissipation unit 6 is formed by deposition or coating, and can be selected from metals, alloy metals, or polymer mixtures containing thermal conductive additives. Specifically, when the heat dissipation unit 6 is selected from a polymer mixture containing thermal conductive additives, it is formed on the protection unit 5 by coating. When the heat dissipation unit 6 is selected from metal or alloy metal, it can be formed before the protection. An extremely thin seed crystal layer (not shown) is formed on the surface of the unit 5, and the heat dissipation layer 61 is then deposited on the seed crystal layer. The above-mentioned structural details and manufacturing method of the power transistor semi-finished product 300 are already known to those in the relevant field, so they will not be described in detail here.

Referring to FIG. 5 , the epitaxial substrate removal step 82 is to remove the epitaxial substrate 7 from the epitaxial structure 20 by etching or grinding, so that the epitaxial structure 20 exposes the bottom surface 22 of the electrode unit 3 . .

The through groove forming step 83 is to remove part of the epitaxial structure 20 from the bottom surface 22 of the epitaxial structure 20 and corresponding to the positions of the conductive layers 312, 322 and the extension section 331 of the electrode unit 3 by etching. The electrode unit 3 is exposed to the outside to form the through grooves 26 to obtain the semiconductor epitaxial structure 2 as shown in FIG. 2 .

The extended electrode forming step 84 is to fill the through grooves 26 with conductive material to form the extended electrodes 41 connected to the electrode unit 3 and extending to the bottom surface 22 of the semiconductor epitaxial structure 2 . In this embodiment, the extended electrode units 4 are formed by deposition, and their constituent materials are selected from metals or alloy metals, and may be the same as or different from the material of the electrode unit 3 .

To sum up, the power transistor 200 in this case removes the epitaxial substrate 7 disposed on the bottom surface 22 of the semiconductor epitaxial structure 2 so that heat can escape directly through the bottom surface 22 and through the heat dissipation unit 6. And the extended electrodes 41 formed in the through grooves 26 further improve the heat dissipation capacity of the power transistor 200, so the purpose of the present invention can indeed be achieved.

However, the above are only examples of the present invention. They cannot be used to limit the scope of the present invention. All simple equivalent changes and modifications made based on the patent scope of the present invention and the contents of the patent specification are still within the scope of the present invention. within the scope covered by the patent of this invention.

200: Power transistor 300: Power transistor semi-finished product 20: Epitaxial structure 2: Semiconductor epitaxial structure 21: Top surface 22: Bottom surface 23: Source area 24: Drain area 25: Gate area 26: Through groove 3: Electrode unit 31: source electrode 311: contact pad 312: conductive layer 32: drain electrode 321: contact pad 322: conductive layer 33: gate electrode 331: extension section 4: extension electrode unit 41: extension electrode 5: protection unit 6: Heat dissipation unit 61: Heat dissipation layer 7: Epitaxial substrate 81: Provision step 82: Epitaxial substrate removal step 83: Through groove formation step 84: Extended electrode formation step

Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, in which: Figure 1 is a top schematic diagram illustrating an electrode unit and a plurality of through grooves of a power transistor with heat dissipation of the present invention. The relative position of the power transistor; Figure 2 is a schematic cross-sectional view, illustrating the cross-sectional structure of the power transistor along the II-II plane line of Figure 1; Figure 3 is a flow chart illustrating the manufacturing method of the power transistor; Figure 4 5 is a schematic flow chart that assists FIG. 3 in explaining a step of the manufacturing method of the power transistor; and FIG. 5 is a schematic flow chart that continues with FIG. 4 to explain the manufacturing method of the power transistor.

81: Provide steps

82: Epitaxial substrate removal steps

83: Groove formation steps

84: Extended electrode formation step

Claims (5)

A method of manufacturing a power transistor with heat dissipation properties, including: A step of providing a power transistor semi-finished product. The power transistor semi-finished product includes an epitaxial substrate, an epitaxial structure formed on the surface of the epitaxial substrate, and a source formed on a side of the epitaxial structure away from the epitaxial substrate. A pole region, a drain region, and a gate region, an electrode unit formed on the surface of the epitaxial structure and connected to the source region, the drain region, and the gate region, and an electrode unit covering the electrode unit and the surface of the epitaxial structure exposed from the electrode unit, and a protection unit made of insulating material, and a heat dissipation unit covering the protection unit and made of heat dissipation material; an epitaxial substrate removal step to remove the epitaxial substrate from the epitaxial structure so that a bottom surface of the epitaxial structure opposite to the electrode unit is exposed; A through-groove forming step is to remove a portion of the epitaxial structure from the bottom surface of the epitaxial structure and at a position corresponding to the electrode unit until the electrode unit is exposed to the outside to form a plurality of through-grooves to obtain a semiconductor. epitaxial structure; and An extended electrode forming step, filling the through grooves with conductive material to form a plurality of extended electrodes connected to the electrode unit and extending to the bottom surface of the semiconductor epitaxial structure, and composed of the extended electrodes for the electrode An extended electrode unit through which the unit is electrically connected to the outside. The method of manufacturing a heat-dissipating power transistor as claimed in claim 1, wherein the step of removing the epitaxial substrate is to remove the epitaxial substrate from the epitaxial structure by etching or grinding. The method of manufacturing a heat-dissipating power transistor as claimed in claim 1, wherein the step of forming the through grooves is to remove part of the epitaxial structure by etching to form the through grooves. The manufacturing method of a power transistor with heat dissipation as described in claim 1, wherein the extended electrode unit is formed by a deposition method, the electrode unit and the extended electrode unit are respectively selected from Metals or metal alloys, and may be the same or different. The manufacturing method of a power transistor with heat dissipation according to claim 1, wherein in the providing step, the protection unit and the heat dissipation unit are formed by deposition or coating, and the constituent material of the protection unit is selected From oxides, nitrides or nitrogen oxides, the constituent material of the heat dissipation unit is selected from metals, alloy metals, or polymer mixtures containing thermal conductive additives, and the thermal conductive additives are carbon materials, nitrides, or oxides.

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