TW202342364A - Reaction furnace for moisture generation - Google Patents
Reaction furnace for moisture generation Download PDFInfo
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- TW202342364A TW202342364A TW112106214A TW112106214A TW202342364A TW 202342364 A TW202342364 A TW 202342364A TW 112106214 A TW112106214 A TW 112106214A TW 112106214 A TW112106214 A TW 112106214A TW 202342364 A TW202342364 A TW 202342364A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 72
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 102
- 239000003054 catalyst Substances 0.000 claims abstract description 54
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 51
- 230000002093 peripheral effect Effects 0.000 claims abstract description 11
- 125000006850 spacer group Chemical group 0.000 claims description 23
- 230000004888 barrier function Effects 0.000 claims description 13
- 239000007789 gas Substances 0.000 description 19
- 239000002994 raw material Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000006555 catalytic reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- -1 iron-chromium-aluminum Chemical compound 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B5/00—Water
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/40—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals of the platinum group metals
- B01J23/42—Platinum
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Catalysts (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Hydrogen, Water And Hydrids (AREA)
Abstract
Description
本發明係關於主要在半導體製造裝置中利用,使氫氣與氧氣反應而產生水分的水分產生用反應爐。The present invention relates to a moisture-generating reactor that is mainly used in semiconductor manufacturing equipment and reacts hydrogen and oxygen to generate moisture.
以往,作為這種反應爐,已知有如圖6所示的水分產生用反應爐1C。此水分產生用反應爐1C,具備:將具有原料氣體的入口2的入口側爐本體構件3與具有水分氣體的出口4的出口側爐本體構件5以對向狀焊接接合之反應爐本體6;第1反射板7,其在反應爐本體6內部配置成與出口4呈對向狀,並與反應爐本體6的內壁面保持間隙G2而固定;第2反射板8,其在反應爐本體6的內部配置成與原料氣體的入口2對向狀,並與反應爐本體6的內壁面保持間隙G1而固定,在出口側爐本體構件5的內壁面塗佈有白金觸媒層9。再者,為了容易理解,用虛線誇張地圖示了白金觸媒層。Conventionally, as such a reaction furnace, a moisture generating
前述結構的水分產生用反應爐1C透過原料氣體的入口2向反應爐本體6內供給氧氣、氫氣,在較氫氣與氧氣的點火點(500~580℃)低的觸媒反應溫度(400℃以下)下,與白金觸媒層9進行觸媒反應,藉此,不會有燃燒,而能產生高純度的水分氣體並能夠從水分氣體取出口取出。The moisture-
另外,圖6所示的水分產生用反應爐1C,藉由在第1反射板7的周緣部與反應爐本體6的內壁面相對向之側設置錐形部10,能夠不產生意外的起火燃燒而穩定地生成水分。亦即,由於觸媒反應在進入第1反射板7與反應爐本體6之間的間隙G2的部分發生強烈反應,故,藉由設置錐形部10,使前述原料氣體不會急劇流入至間隙G2,藉此抑制強力的觸媒反應產生,防止溫度的局部急劇上升,並防止起火。
[先前技術文獻]
[專利文獻]
In addition, in the moisture
[專利文獻1]日本特開第2000-169109號公報[Patent Document 1] Japanese Patent Application Laid-Open No. 2000-169109
[發明所欲解決之問題][Problem to be solved by the invention]
前述以往的水分產生用反應爐在能防止起火的危險性的同時達到水分發生率98%,穩定地達到高的水分產生率。但,雖可防止起火的危險性,但亦有期望進一步提高水分產生率的要求。The above-mentioned conventional moisture generation reactor can prevent the risk of fire and achieve a moisture generation rate of 98%, stably achieving a high moisture generation rate. However, although the risk of fire can be prevented, there is also a demand to further increase the moisture generation rate.
因此,本發明的目的在於提供一種能夠在防止起火危險性的同時實現更高的水分產生率的水分產生用反應爐。 [解決問題之技術手段] Therefore, an object of the present invention is to provide a moisture generation reactor capable of achieving a higher moisture generation rate while preventing the risk of fire. [Technical means to solve problems]
為了達到前述目的,本發明的一態樣的水分產生用反應爐,係具備: 反應爐本體,其具有氣體的入口及出口; 第1反射板,其與前述出口對向狀配設,與前述反應爐本體的內壁面保持有間隙而固定在前述反應爐本體內,並且在與前述反應爐本體的內壁面相對向的周緣部形成有錐形部; 第1白金觸媒層,其塗佈於前述反應爐本體的內壁面;及 第2白金觸媒層,其塗佈於前述第1反射板之與前述反應爐本體相對向之側且較前述錐形部更內側之外表面。 In order to achieve the aforementioned object, one aspect of the moisture generating reactor of the present invention is equipped with: The reactor body has a gas inlet and outlet; The first reflecting plate is disposed facing the outlet, is fixed in the reaction furnace body with a gap from the inner wall surface of the reaction furnace body, and is located at a peripheral edge portion facing the inner wall surface of the reaction furnace body. Formed with a tapered portion; The first platinum catalyst layer is coated on the inner wall surface of the aforementioned reaction furnace body; and The second platinum catalyst layer is coated on the outer surface of the first reflecting plate on the side opposite to the reaction furnace body and further inside than the tapered portion.
亦可還具備:環狀間隔件,其中介於前述第1反射板與前述反應爐本體的內壁面之間,用來保持有前述間隙;固定螺絲,其通過前述環狀間隔件而將前述第1反射板固定於前述反應爐本體, 前述第2白金觸媒層塗佈於除了前述環狀間隔件與前述第1反射板抵接的部分以外之前述外表面。 You may also further include: an annular spacer, which is interposed between the first reflecting plate and the inner wall surface of the reaction furnace body to maintain the aforementioned gap; and a fixing screw that secures the aforementioned third spacer through the annular spacer. 1. The reflecting plate is fixed on the aforementioned reaction furnace body. The second platinum catalyst layer is coated on the outer surface except for the portion where the annular spacer comes into contact with the first reflecting plate.
前述第2白金觸媒層能夠塗佈於較前述環狀間隔件更內側。The second platinum catalyst layer can be coated on the inner side of the annular spacer.
亦可為在前述反應爐本體的內壁面全面及前述第1反射板全面塗佈阻隔被膜,並且塗佈前述第1白金觸媒層及前述第2白金觸媒層。Alternatively, a barrier film may be coated on the entire inner wall surface of the reaction furnace body and the entire first reflective plate, and the first platinum catalyst layer and the second platinum catalyst layer may also be coated.
亦可還具備第2反射板,其與前述入口對向狀配設,與前述反應爐本體的內壁面保持有間隙而固定在前述反應爐本體內,並且在與前述反應爐本體的內壁面相對向的周緣部形成有錐形部; 前述第2反射板在全面塗佈有阻隔被膜且未塗佈有白金觸媒層。 [發明效果] You may further include a second reflecting plate, which is disposed opposite to the inlet, is fixed in the reaction furnace body with a gap from the inner wall surface of the reaction furnace body, and is opposite to the inner wall surface of the reaction furnace body. A tapered portion is formed on the peripheral portion; The aforementioned second reflective plate is coated with a barrier film on its entire surface and is not coated with a platinum catalyst layer. [Effects of the invention]
若依據本發明,藉由將第2白金觸媒層塗佈於前述第1反射板之與前述反應爐本體相對向之側且較前述錐形部更內側之外表面,在可防止起火的危險性的同時可達到更高的水分產生率。According to the present invention, by coating the second platinum catalyst layer on the outer surface of the first reflecting plate on the side opposite to the reaction furnace body and further inside than the tapered portion, the risk of fire can be prevented. It can achieve higher moisture production rate while maintaining stability.
以下,參照圖1至圖5,說明關於本發明的水分產生用反應爐之實施形態。再者,包括先前技術在內,在全圖及全部實施例中,對相同或類似的構成要件賦予相同的符號。Hereinafter, an embodiment of the moisture generating reaction furnace of the present invention will be described with reference to FIGS. 1 to 5 . In addition, the same or similar components are given the same reference numerals throughout the drawings and embodiments, including the prior art.
參照圖1,第1實施形態之水分產生用反應爐1A具備:反應爐本體6,其具有原料氣體(氧及氫)的入口2及水分氣體及未反應的原料氣體的出口4;第1反射板7,其與出口4對向狀配設,與反應爐本體6的內壁面保持有間隙G2而固定在反應爐本體6內,並且在與反應爐本體6的內壁面相對向的周緣部形成有錐形部10;第2白金觸媒層11,其塗佈於塗佈在反應爐本體6的內壁面之第1白金觸媒層9、和第1反射板7之與反應爐本體6相對向之側且較錐形部10更內側之外表面。Referring to FIG. 1 , a moisture
且,水分產生用反應爐1A具備第2反射板8。第2反射板8,其與入口2對向狀配設,與反應爐本體6的內壁面保持有間隙G1而固定在反應爐本體6內,並且在與反應爐本體6的內壁面相對向的周緣部形成有錐形部12。第2反射板8具有使自入口2流入的原料氣體有效率地擴散於反應爐本體6內的功能。Furthermore, the moisture
反應爐本體6將入口側爐本體構件3與出口側爐本體構件5接合而具有短的圓柱狀外形。藉由入口側爐本體構件3的凹部3a與出口側爐本體構件5的凹部5a,形成內部空間P。凹部3a及凹部5a的各自的周緣凸緣部3b、5b藉由對接焊接而接合。氣體的入口2設在入口側爐本體構件3。水分氣體的出口4設在出口側爐本體構件5。The
第1白金觸媒層9主要塗佈於出口側爐本體構件5。入口側爐本體構件3亦可在周緣凸緣部3b的內表面塗佈第1白金觸媒層9。The first
若在第2反射板8塗佈白金觸媒層,則氣體進入爐內立即在間隙G1內引起觸媒反應。由於比起爐本體,第2反射板8的熱容量小,故,容易變成高溫,亦無法如反應爐本體6朝外部散熱,因此,若在第2反射板8塗佈白金觸媒層,則有起火的可能性。因此,期望在第2反射板8不塗佈白金觸媒層。If the platinum catalyst layer is coated on the second reflecting
第2反射板8及第1反射板7均具有圓板形狀。第2反射板8及第1反射板7經由間隙G1、G2大致平行地安裝在反應爐本體6的內壁面上,錐形部10、12形成為隨著朝向外周側而與反應爐本體6的內壁面的距離擴大。Both the second reflecting
反應爐本體6、第1反射板7、及第2反射板8可藉由不鏽鋼形成,但,亦可藉由其他材料例如鎳合金、鋁合金、鐵-鉻-鋁合金等形成。The
在反應爐本體6的內側面、第1反射板7的表面、及第2反射板8的表面,全面塗佈有對於氧及氫具有鈍性之阻隔被膜13。第1白金觸媒層9及第2白金觸媒層11塗佈於阻隔被膜13上。阻隔被膜阻止構成反應爐本體6等之不鏽鋼等的母材中的雜質釋出到外部且阻止擴散至白金觸媒層內,用以防止白金觸媒層的劣化。The inner surface of the
阻隔被膜13可採用習知的材料。作為阻隔被膜,例如TiN、Al
2O
3、TiCN、TiAlN、Cr
2O
3、SiO
2、CrN、Y
2O
3、或Y
2O
3與其他的金屬氧化物(Ta
2O
5、SiO
2、TiO
2、ZrO
2、Al
2O
3、HfO
2、La
2O
3、CeO
2、Ce2O
3、MgO、ThO
2)之混合材料為眾所皆知。阻隔被膜13可藉由離子披覆法、離子濺鍍法、真空蒸鍍法等的PVD法、化學蒸鍍法(CVD法)、熱壓法或熱噴塗法等形成。阻隔被膜13的厚度可設為0.1μm至5μm左右。
The
第1白金觸媒層9及第2白金觸媒層11可藉由真空蒸鍍法、離子披覆法、濺鍍法、化學蒸鍍法、熱壓法等進行成膜。第1白金觸媒層9及第2白金觸媒層11的厚度設成0.1μm~3μm為佳。再者,為了容易理解,在圖1中,用虛線誇張地顯示白金觸媒層。The first
第1反射板7透過環狀間隔件14而藉由固定螺絲15固定於反應爐本體6。藉由供固定螺絲15通過的環狀間隔件14,在第1反射板7與反應爐本體6的內壁面之間保持有間隙G2。第2反射板8亦同樣地,透過環狀間隔件16而藉由固定螺絲17固定於反應爐本體6。間隙G1、G2理想為0.5~1.0mm,在圖示例設為0.5mm。在環狀間隔件14、16及固定螺絲15、17各自的表面,亦設有前述阻隔被膜。The first reflecting
固定螺絲15在第1反射板7的錐形部10之半徑方向內側,沿著錐形部10以預定角度間隔(例如以90°間隔在4個部位)進行配設。The fixing screws 15 are arranged on the radial inner side of the tapered
具有前述結構的水分產生用反應爐1A,藉由在第1反射板7上塗佈第2白金觸媒層11,使觸媒反應增加,獲得更高的水分產生率。In the
如前述記載,錐形部10使原料氣體不會急劇進入間隙G2而防止溫度的急劇上升,但,若將第2白金觸媒層11也塗佈在錐形部10,則和與第1白金觸媒層9的反應相結合,觸媒反應變強,有溫度急劇上升而起火之虞。因此,除了錐形部10以外,在較錐形部10更內側的面上塗佈第2白金觸媒層11。As described above, the tapered
且,在圖示例中,根據環狀間隔件14的材質、固定螺絲15的緊固扭矩的偏差等,亦可考慮在拴緊固定螺絲15時,在環狀間隔件14與第2白金觸媒層11接觸的部分,造成第2白金觸媒層11損傷,由此引起起火的可能性。因此,第2白金觸媒層11不塗佈於與環狀間隔件14接觸的部分為佳,在較環狀間隔件14更靠近半徑方向的內側呈圓形狀進行塗佈為佳。另外,為了確實地避免與環狀間隔件14之接觸,使第2白金觸媒層11預先與環狀間隔件14分離預定距離L(圖2、圖3)為佳。距離L可設為4~7mm。Furthermore, in the illustrated example, depending on the material of the
作為變更例,亦可如圖4所示,除了與環狀間隔件14之接觸區域以外,亦可將較錐形部10更內側的面以第2白金觸媒層11加以塗佈。再者,與環狀間隔件14之接觸區域以外,亦可塗佈第1白金觸媒層9。As a modified example, as shown in FIG. 4 , in addition to the contact area with the
另一方面,流入間隙G2的氣體隨著接近出口4,未反應氣體减少,流到間隙G2中間的未反應氣體變少,因此,即使在第1反射板7與反應爐本體6雙方都有白金觸媒層,也不會發生直至起火程度的反應(溫度上升)。藉此,既可防止起火的危險性,又可獲得更高的水分產生率。On the other hand, as the gas flowing into the gap G2 approaches the
圖5顯示本發明的水分產生用反應爐之第2實施形態。第2實施形態的水分產生用反應爐1B具有厚度稍厚的第1反射板7,但不具備第1實施形態的第2反射板8,使得相應地被緊緻化。第2實施形態的其他結構是與第1實施形態相同,因此在此省略詳細說明。Fig. 5 shows a second embodiment of the moisture generating reaction furnace of the present invention. The moisture generating
再者,本發明不限於前述實施形態,在不超出本發明的技術思想範圍可進行各種變更。In addition, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the technical idea of the present invention.
1A,1B,1C:水分產生用反應爐
2:入口
3:入口側爐本體構件
4:出口
5:出口側爐本體構件
6:反應爐本體
7:第1反射板
8:第2反射板
9:第1白金觸媒層
10:錐形部
11:第2白金觸媒層
14,16:環狀間隔件
15,17:固定螺絲
1A, 1B, 1C: Reaction furnace for moisture generation
2: Entrance
3: Inlet side furnace body components
4:Export
5: Exit side furnace body components
6:Reaction furnace body
7: The first reflective plate
8: 2nd reflector
9: The first platinum catalyst layer
10:Tapered part
11: The second
[圖1]係顯示本發明的水分產生用反應爐之第1實施形態的剖面圖。 [圖2]係圖1的部分放大圖。 [圖3]係圖1的III-III線之剖面圖。 [圖4]係顯示圖3所示的形態的變更例之剖面圖。 [圖5]係顯示本發明的水分產生用反應爐之第2實施形態的剖面圖。 [圖6]係顯示以往的水分產生用反應爐之剖面圖。 [Fig. 1] is a cross-sectional view showing the first embodiment of the moisture generating reaction furnace of the present invention. [Figure 2] is a partially enlarged view of Figure 1. [Fig. 3] is a cross-sectional view taken along line III-III in Fig. 1. [Fig. 4] is a cross-sectional view showing a modified example of the form shown in Fig. 3. [Fig. [Fig. 5] is a cross-sectional view showing a second embodiment of the moisture generating reaction furnace of the present invention. [Fig. 6] is a cross-sectional view showing a conventional reaction furnace for moisture generation.
1A:水分產生用反應爐 1A: Reaction furnace for moisture generation
2:入口 2: Entrance
3:入口側爐本體構件 3: Inlet side furnace body components
4:出口 4:Export
5:出口側爐本體構件 5: Exit side furnace body components
6:反應爐本體 6:Reaction furnace body
7:第1反射板 7: The first reflective plate
8:第2反射板 8: 2nd reflector
9:第1白金觸媒層 9: The first platinum catalyst layer
10:錐形部 10:Tapered part
11:第2白金觸媒層 11: The second platinum catalyst layer
12:錐形部 12:Tapered part
13:阻隔被膜 13: Barrier film
14,16:環狀間隔件 14,16: Ring spacer
15,17:固定螺絲 15,17: Fixing screws
3a,5a:凹部 3a,5a: concave part
3b,5b:周緣凸緣部 3b, 5b: Peripheral flange part
G1,G2:間隙 G1, G2: Gap
P:內部空間 P: internal space
Claims (5)
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JP2022039549 | 2022-03-14 | ||
JP2022-039549 | 2022-03-14 |
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TW202342364A true TW202342364A (en) | 2023-11-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW112106214A TW202342364A (en) | 2022-03-14 | 2023-02-21 | Reaction furnace for moisture generation |
Country Status (4)
Country | Link |
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JP (1) | JPWO2023176208A1 (en) |
KR (1) | KR20240052957A (en) |
TW (1) | TW202342364A (en) |
WO (1) | WO2023176208A1 (en) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3644790B2 (en) * | 1997-04-28 | 2005-05-11 | 忠弘 大見 | Water generation reactor |
JP3686762B2 (en) | 1998-12-04 | 2005-08-24 | 株式会社フジキン | Water generation reactor |
KR100402665B1 (en) * | 2000-06-05 | 2003-10-22 | 가부시키가이샤 후지킨 | Reactor for generating moisture |
-
2023
- 2023-02-08 KR KR1020247010039A patent/KR20240052957A/en unknown
- 2023-02-08 JP JP2024507575A patent/JPWO2023176208A1/ja active Pending
- 2023-02-08 WO PCT/JP2023/004136 patent/WO2023176208A1/en active Application Filing
- 2023-02-21 TW TW112106214A patent/TW202342364A/en unknown
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Publication number | Publication date |
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WO2023176208A1 (en) | 2023-09-21 |
JPWO2023176208A1 (en) | 2023-09-21 |
KR20240052957A (en) | 2024-04-23 |
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