TWM446413U - Deposition isolated disk - Google Patents

Abstract

A Deposition isolated disk using in a chemical vapor deposition system is provided. The deposition isolated disk comprises a blocking disk and a tension disk. The blocking disk has a plurality of arc edges, an inner wall , a relative upper surface and lower surface. The tension disk has a tension surface and an outer wall. The outer wall of the tension disk further has an assembling structure. The outer wall of the tension disk supports the inner wall of the blocking disk by the assembling structure.

Description

Deposition spacer

This creation relates to a deposition separator disk, and more particularly to a deposition separator disk for use in a chemical vapor deposition system.

Chemical Vapor Deposition (CVD) is a technology that produces high-purity solid materials and is widely used in the semiconductor industry. A typical CVD process places the substrate in a mixed gas atmosphere and heats it at a medium to high temperature to chemically react the surface of the substrate to produce a film to be deposited.

In order to prevent deposits from entering the inside of the machine and damaging the parts, the CVD reactor is often provided with isolation elements to separate the reaction parts of the machine parts from the substrate. However, the current isolation elements are quite fragile, and it is prone to cracking or cracking after depositing a certain amount of deposits, and may even rupture during cleaning, which in vain increases costs.

This work proposes a deposition isolation disk that increases strength while extending its life cycle.

According to an embodiment of the present invention, a deposition spacer disposed in a chemical vapor deposition system is provided, the deposition spacer including a barrier disk and a tension disk. The barrier disk has a plurality of arcuate outer edges, an inner wall and opposite barrier surfaces and a barrier bottom surface. The tension disk has a tension surface and an outer wall. The outer wall of the tension disc has a combined structure, so that the outer wall of the tension disc supports the inside of the barrier disc wall.

In order to better understand the above and other aspects of the present invention, the following specific embodiments, together with the drawings, are described in detail below:

Please refer to FIG. 1 , which is a perspective exploded view of a deposition spacer according to an embodiment of the present invention. The deposition spacer 100 is a two-piece structure including a barrier disk 110 and a tension disk 120. A composite structure 121 is formed on the barrier disk 110. The tension disk 120 is combined with the barrier disk 110 by the combination structure 121 to deposit the spacer disk 100.

As shown in Fig. 1, the barrier disk 110 has a uniform annular structure having an outer edge 110a, an inner wall 110b, and a opposing barrier surface 110a and a barrier bottom surface 110b (Fig. 2).

The outer edge 110a has an arc shape, and each arc can be closely attached to a wafer to be deposited (not shown). In the present embodiment, the outer edge 110a is composed of eleven arcs, but the number is not limited thereto. In addition, in other embodiments, the shape of the outer edge 110a of the barrier disk may be adjusted depending on the design or process of the machine.

The inner wall 110b is annular and surrounds the exit space 111 to accommodate the tension disk 120.

Referring to FIG. 2, a cross-sectional view showing the state in which the barrier disk 110 is separated from the tension disk 120 is shown. The thickness of the barrier disk 110 from the inner wall 110b to the outer edge 110a is the same, preferably but not limited to about 3.8 millimeters (mm). This uniform thickness provides sufficient strength for the barrier disk 110 to avoid the occurrence of cracks and cracks. It is not intended to limit this embodiment.

The tension disk 120 has an outer wall 120a and an opposite tension surface 120c and Tension bottom surface 120d.

The thickness of the tension disk 120 is greater than the thickness of the barrier disk 110, preferably but not limited to about 17 millimeters, although this value is not intended to limit this embodiment. The thickness of the tension disk 120 provides the tension disk 120 with sufficient strength that deposits thereon are less likely to cause cracking or cracking even if stacked.

The tension disk 120 and the barrier disk 110 may be made of the same or different materials, and the material is selected from materials which do not react with the reactants of the chemical vapor deposition system, such as quartz.

Further, a combined structure 121 is formed on the outer wall 120a of the tension disk 120. The outer wall 120a of the tension disc 120 can support the inner wall 110b of the barrier disk 110 by the combined structure 121, thereby being combined to form the deposition spacer 100.

The combined structure 121 is an annular inner recess 122. The annular inner recess 122 is recessed from the outer wall 120a of the tension disc 120 toward the inner side of the tension disc 120 to form an inner side wall 122b and an inner side plane 122c. The inner side wall 122b and the inner side plane 122c form an L-shaped structure, so that the tension The area of the surface 120c is smaller than the area of the tension bottom surface 120d.

Referring to FIG. 3, a cross-sectional view showing a state in which the barrier disk 110 and the tension disk 120 are combined is shown. When the barrier disk 110 is combined with the tension disk 120, the tension disk 120 is placed in the space 111 inside the barrier disk 110, and a part of the barrier disk 110 is engaged in the annular inner recess 122 of the tension disk 120, so that the inner plane 122c supports Part of the barrier disk 110 blocks the bottom surface 110d.

The thickness of the barrier disk 110 may be equal to the height of the annular inner recess of the tension disk 120 such that the barrier surface 110c of the barrier disk 110 is aligned with the tension surface 120c of the tension disk 120.

The size of the tension disk 120 may be slightly smaller than the space inside the barrier disk 110 111, a gap I is formed between the combined barrier disk and the tension disk to reduce stress caused by thermal expansion and contraction. The tension disk 120 may also be equal in size to the space 111 inside the barrier disk 110 such that the inner wall 110b of the barrier disk 110 can abut against the inner side wall 122b of the annular inner recess 122.

The combined structure 121 in this example is exemplified by the annular inner recess 122 of Fig. 2, but it is not intended to define the shape of the combined structure. The combined structure 121 of the present invention is only required to support the barrier disk 110 with the tension disk 120.

By the design of the combined structure 121, the deposition spacer of the present invention can be divided into two parts, the thickness of the tension disk is increased, and the tension disk is used as a barrier disk. Not only is it easy to clean, but it also increases the strength of the components.

In summary, although the present invention has been disclosed above by way of example, it is not intended to limit the present invention. Those who have ordinary knowledge in the technical field of the present invention can make various changes and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of this creation is subject to the definition of the scope of the patent application.

100‧‧‧Deposition isolation tray

110‧‧‧Block

110a‧‧‧ outer edge

110b‧‧‧ inner wall

110c‧‧‧Baffle surface

110d‧‧‧Baffle bottom

111‧‧‧ Space

120‧‧‧Tension disk

120a‧‧‧ outer wall

120c‧‧‧ Tension surface

120d‧‧‧ Tension bottom

121‧‧‧Combined structure

122‧‧‧Circular recess

122b‧‧‧ inner side wall

122c‧‧‧ inside plane

I‧‧‧ gap

FIG. 1 is an exploded perspective view of a deposition spacer according to an embodiment of the present invention.

Figure 2 is a cross-sectional view showing the state in which the barrier disk and the tension disk are separated.

Figure 3 is a cross-sectional view showing the state in which the barrier disk and the tension disk are combined.

100‧‧‧Deposition isolation tray

110‧‧‧Block

110a‧‧‧ outer edge

110b‧‧‧ inner wall

110c‧‧‧Baffle surface

111‧‧‧ Space

120‧‧‧Tension disk

120c‧‧‧ Tension surface

121‧‧‧Combined structure

Claims (8)

A deposition spacer disposed in a chemical vapor deposition system, the deposition spacer comprising: a barrier disk having a plurality of arcuate outer edges, an inner wall, a barrier surface, and a barrier bottom surface; and a force The disc has a force surface and an outer wall, wherein the outer wall of the tension disc has a combined structure such that the outer wall of the tension disc supports the inner wall of the barrier disc. The deposition isolation disk of claim 1, wherein the composite structure is an annular inner recess having an inner side wall, and a portion of the barrier disk is engaged with the annular inner recess The inner wall of the barrier disk is brought into close contact with the inner side wall of the annular inner recess. The deposited spacer disk of claim 2, wherein the annular inner recess further has an inner plane such that the inner plane supports a portion of the barrier bottom surface of the barrier disk. The deposition separator of claim 1, wherein the barrier disk has the same thickness from the inner wall to the outer edge. The deposition spacer of claim 1, wherein the tension disk has a tension bottom surface with respect to the tension surface, the tension surface having an area smaller than an area of the tension bottom surface. The deposition separator of claim 1, wherein the tension disk has a thickness greater than a thickness of the barrier disk. The deposition separator of claim 1, wherein the barrier disk has a thickness of at least 3.8 mm. The deposition separator disc of claim 1, wherein the sheet is The force plate has an average thickness of at least 17 mm.