TWI491758B - Deposition apparatus for photoelectrical semiconductor manufacturing process and shadow frame thereof - Google Patents

Description

Deposition apparatus for optoelectronic semiconductor processes and its cover

The present invention relates to an optoelectronic semiconductor device, and more particularly to a deposition apparatus for an optoelectronic semiconductor process and a mask thereof.

As consumers' demand for handheld communication devices (such as smart phones, tablets, etc.) continues to increase, the growth of small-sized panel shipments has increased. Panel manufacturers are currently cutting panels in the most cost-effective manner to produce as many panels of a particular size as possible on a single glass substrate. In addition to the cutting method of the panel, expanding the effective film forming range of the glass substrate can increase the usable area of the panel, which also makes the panel more flexible in cutting. Therefore, panel manufacturing technology is gradually moving toward expanding the effective film forming range.

In the conventional optoelectronic semiconductor process, a shadow frame having a direct influence on the effective film formation range of the glass substrate is a hollow frame having a size similar to that of the glass substrate. In the manufacturing process, the cover frame covers the outer edge of the glass substrate, and the exposed portion of the hollow portion is a region on the glass substrate where film formation is performed to form the display elements of the panel. The mask is typically used to secure the glass substrate in a conventional process to reduce the effects of possible disturbances on the glass substrate.

A plasma-enhanced chemical vapor deposition (PECVD) machine is a commonly used machine in an optoelectronic semiconductor process. Please refer to Figure 1 for the existing PECVD machine 1 Schematic diagram of the structure. In the PECVD machine 1, a diffuser 12 is used as an upper electrode, and a susceptor 14 is used as a lower electrode. When chemical vapor deposition is performed, gas is introduced from the inlet 11, and after the temperature rises by the heat equalizing plate 17, a plurality of holes from the diffusion plate 12 enter the cavity. The voltage difference between the diffusion plate 12 and the heater 14 causes the gas to ionize to form the plasma 16, and further deposits a film on the glass substrate 10 exposed on the hollow portion of the mask 20 to form a display element, excess gas. Then it is discharged from the outlet 19.

Please refer to FIG. 2, which shows a schematic plan view of the cover frame 20 in FIG. The cover frame 20 has a frame-shaped body 21 designed to fit the size and shape of the glass substrate 10. As shown in Fig. 2, the cover frame 20 is a hollow structural member, and the frame-shaped body 21 is a hollow frame. Further, a symmetrical arrangement of the slots 25 is provided in the frame-shaped body 21 of the cover frame 20.

Fig. 3 is a view showing a detailed arrangement of the glass substrate 10, the heating plate 14, and the mask 20 in Fig. 1 . Referring to FIG. 3 in conjunction with FIG. 2, during the PECVD process, the glass substrate 10 is placed on the carrying surface 140 of the heating plate 14, and the covering frame 20 covers the outer edge of the glass substrate 10. At this time, the flange 22 on the inner frame side of the frame body 21 of the cover frame 20 is pressed against the glass substrate 10, and the slot 25 of the cover frame 20 is fitted to the bump (not shown) on the heater board 14. To fix the glass substrate 10.

In the conventional PECVD process, since the flange 22 on the inner frame side of the cover frame 20 is placed over the outer edge of the glass substrate 10, the effective film formation range on the glass substrate 10 is affected. That is to say, this outer peripheral region of the glass substrate 10 cannot form the display element or the electronic circuit component of the panel, and the effective film forming range of the glass substrate 10 is thus limited, which is disadvantageous for the flexibility of the small-sized panel product in cutting.

Furthermore, please refer to Figures 4A and 4B further. As shown in FIG. 4A, during the film formation process, the heater 14 is in a raised position, the glass substrate 10 is placed on the heater 14, and the bearing surface 140 of the heater 14 is placed. The outer edge of the glass substrate 10 is covered by the inner frame flange 22 of the cover frame 20, and the area of the glass substrate 10 that is not covered by the cover frame 20 is a region where film formation is possible. As shown in FIG. 4B, when the glass substrate 10 is to be moved, the heater 14 is lowered to be in a lowered position, and the glass substrate 10 is supported by the support column 103 without being copied. The frame 20 is supported by the holder 102 on the cavity wall 101 and held in the original position, and then the glass substrate 10 can be freely moved by simply removing the cover frame 20.

However, in the above process, the up and down movement of the heater 14 is frequently separated from the cover frame 20, and the covering and moving of the cover frame 20 are likely to cause dust generation to occur, which becomes a source of abnormal microparticles on the surface of the glass substrate 10. This may result in a decrease in product yield.

It is an object of the present invention to provide a deposition apparatus for an optoelectronic semiconductor process and a mask thereof for increasing the effective film formation range of the glass substrate.

In order to achieve the above object, the present invention provides a deposition apparatus for an optoelectronic semiconductor process, comprising: a heater having a first bearing surface and a second bearing surface disposed around the outside of the first bearing surface, the first a bearing surface for supporting a glass substrate; and a shielding frame disposed on the second bearing surface of the heater, the shielding frame having a frame-shaped body formed around the hollow region, the glass substrate being placed on the The area surrounded by the frame body, wherein the outermost edge of the inner frame of the cover frame is substantially aligned with the side edge of the first bearing surface of the heater.

In another aspect, the present invention provides a masking frame suitable for use in a deposition apparatus for an optoelectronic semiconductor process, the deposition apparatus comprising a heater having a bearing surface for supporting the glass substrate, the masking frame comprising: a frame a shaped body formed around a hollow region, the hollow region surrounded by the frame-shaped body is for placing the glass substrate, and a filler member fixedly engaged with the frame-shaped body, the filler member for filling the frame Shape body and first load of the heater a gap between the side edges of the face, wherein the frame-shaped body and the filler member are combined to form a cover frame, and an outermost edge of the inner peripheral surface thereof is substantially aligned with a side edge of the first bearing surface of the heater.

In still another aspect, the present invention provides a masking frame suitable for use in a deposition apparatus for an optoelectronic semiconductor process, the deposition apparatus comprising a heater having a bearing surface for supporting the glass substrate, the masking frame comprising: a frame a shaped body formed around a hollow region, the hollow region surrounding the frame-shaped body is for placing the glass substrate, wherein the outermost edge of the circumferential surface of the frame-shaped body frame and the first bearing surface side of the heater The edges are basically in line.

Compared with the conventional cover frame, the cover frame of the present invention does not cover the outer edge of the glass substrate. Therefore, the cover frame of the present invention can enlarge the effective film formation range of the glass substrate, thereby increasing the usable area of the panel. Making more semiconductor components makes the production of small-sized panels more flexible in cutting, improving the overall utilization of the panels. On the other hand, the cover frame of the present invention can be raised and lowered with the heater, so that the generation of abnormal fine particles on the surface of the glass substrate can be reduced, thereby improving the product yield.

1‧‧‧PECVD machine

10‧‧‧ glass substrate

11‧‧‧ Entrance

12‧‧‧Diffuser

14‧‧‧heater

16‧‧‧ Plasma

17‧‧‧Homothermal board

19‧‧‧Export

20,20a~20e‧‧‧ Covering frame

21, 21a~21e‧‧‧ frame-shaped ontology

22‧‧‧Flange

25‧‧‧Slots

28, 28a~28c‧‧‧Filling parts

29‧‧‧Chamfering

30a~30c‧‧‧Locker

101‧‧‧ cavity wall

102‧‧‧Support

103‧‧‧Support column

140‧‧‧First bearing surface

142‧‧‧Second bearing surface

201‧‧‧ top surface

202‧‧‧ bottom

Figure 1 is a schematic view showing the structure of a conventional plasma-assisted chemical vapor deposition machine.

Fig. 2 is a schematic plan view showing the cover frame in Fig. 1.

Fig. 3 is a view showing a detailed arrangement of the glass substrate, the heating plate, and the mask frame in Fig. 1.

Figure 4A shows a schematic view of the heater in the existing deposition station in the raised position.

Figure 4B shows a schematic view of the heater in the existing deposition station in a lowered position.

Fig. 5 is a view showing a partial arrangement of a heater and a cover frame in a deposition apparatus according to a first embodiment of the present invention.

Fig. 6 is a view showing a partial arrangement of a heater and a cover frame in a deposition apparatus according to a second embodiment of the present invention.

Fig. 7A is a view showing an example of a locking manner of the frame-shaped body and the filling member in the present invention.

Fig. 7B is a view showing another example of the locking manner of the frame-shaped body and the filling member in the present invention.

Fig. 7C is a view showing still another example of the locking manner of the frame-shaped body and the filling member in the present invention.

Fig. 8A is a view showing the heater in the deposition machine of the present invention in a raised position.

Fig. 8B is a view showing the heater in the deposition machine of the present invention in a lowered position.

The embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, the invention may be embodied in a variety of different forms and is not limited to the embodiments described herein. Further, in order to clarify the description of the present invention, portions that are not related to the description are omitted in the drawings, and similar parts are used throughout the specification.

In the following description, the improvement of the cover frame of the present invention will be described in two parts: (1) processing with an existing cover frame (first embodiment); and (2) manufacturing a new cover frame ( The second embodiment), in which the first embodiment will be explained with reference to Fig. 5, and the second example will be explained with reference to Fig. 6.

Please refer to FIG. 5, which shows a partial arrangement of a heater and a cover frame in a deposition apparatus for an optoelectronic semiconductor process according to a first embodiment of the present invention. Set the diagram. As shown in FIG. 5, the heater 14 in the deposition apparatus has a first bearing surface 140 and a second bearing surface 142. The first bearing surface 140 and the second bearing surface 142 form a step, that is, the first The bearing surface 140 and the second bearing surface 142 are located at different height positions with a height difference. In this example, the first bearing surface 140 is located above the second bearing surface 142. The first bearing surface 140 is for supporting the glass substrate 10. During the process, the glass substrate 10 is placed on the first bearing surface 140 for various film deposition. The cover frame 20a is disposed on the second bearing surface 142 of the heater 14, and the cover frame 20a surrounds the glass substrate 10 from a plan view. The heater 14 is in the deposition apparatus except that the glass substrate 10 is maintained at a certain temperature and serves as a lower electrode.

The outer shape of the cover frame 20a is similar to the cover frame 20 shown in FIG. 2, and is a frame structure with a hollow interior. The cover frame 20a has a frame-shaped body 21a formed around the hollow region, and the glass substrate 10 is placed in a region surrounded by the frame-shaped body 21a, and an optoelectronic semiconductor process is performed in the deposition apparatus, and the glass substrate 10 can thus form a panel. Display element or electronic circuit component. The cover frame 20a has a top surface 201 and a bottom surface 202. Since the cover frame 20a is placed on the second bearing surface 142 of the heater 14, the bottom surface 202 of the cover frame 20a and the second load of the heater 14 Face 142 fits. In the original specification design of the cover frame, the top surface is higher than the first bearing surface of the heater (see Fig. 3). In the improvement of the cover frame of this embodiment, this feature is retained because of the cover. The original thickness of the frame is very thin, and if the cover frame is thinned, the original surface flatness may not be maintained.

Continuing to refer to FIG. 5, in the embodiment illustrated in FIG. 5, which is processed by the conventional cover frame, the original cover frame is used to cover the flange of the glass substrate (see FIG. 3, Marked as 22) cutting and removing, there is a gap between the frame-shaped body of the covering frame and the side edge of the first bearing surface of the heater, and the void is filled in order to avoid deposits in the process. Therefore, the cover frame 20a of the present embodiment further includes a filler member 28 that is fixedly engaged with the frame-shaped body 21a of the cover frame 20a. For example, a material (for example, aluminum) having the same material as that of the frame-shaped body 21a is used as the filling member 28, and after the surface thereof is anodized, it is tightly joined to the frame-shaped body 21a by inlaying, screwing, or the like.

As shown in Fig. 5, the modified cover frame 20a is formed such that the outermost edge of the inner peripheral surface of the inner frame is substantially aligned with the side edge of the first bearing surface 140 of the heater 14. Specifically, the cover frame formed by the combination of the frame-shaped body 21a and the filler member 28 has an outermost edge on the inner circumferential surface of which is substantially aligned with the side edge of the first bearing surface 140 of the heater 14. Therefore, compared with the conventional cover frame (see FIG. 3), the cover frame does not cover the outer edge of the glass substrate in this structure, so the use of the cover frame of the present invention can expand the effective film formation range of the glass substrate. Therefore, the usable area of the panel can be increased, and more semiconductor components can be fabricated, so that the production of the small-sized panel is more flexible in cutting, and the overall utilization of the panel is improved.

Please refer to FIG. 6 for a partial configuration diagram of a heater and a cover frame in a deposition apparatus for an optoelectronic semiconductor process according to a second embodiment of the present invention. The embodiment shown in Fig. 6 is for the purpose of manufacturing a new cover frame. Compared with the first embodiment of the present invention, the new cover frame 20b is substantially integrally formed without the need for additional filler members. Furthermore, unlike the first embodiment, the thickness specification can be changed such that the top surface 201 of the new covering frame 20b is substantially aligned with the first bearing surface 140 of the heater 14, so that the glass can be prevented from being moved. In the case of the substrate 10, the glass substrate 10 collides with the mask frame to cause damage to the glass substrate 10.

As shown in Fig. 6, the outermost outer edge of the inner peripheral surface of the cover frame 20b or its frame-shaped body 21b is substantially aligned with the first bearing surface 140 of the heater 14, as described above, the advantage of this configuration is that Expand the effective film formation range of the glass substrate.

It should be noted that the outermost edge of the inner circumferential surface of the cover frame mentioned above is substantially identical to the first bearing surface. In practice, the positioning error of the mechanical vacuum arm when transporting the glass substrate can be considered. Design with the specification error of the heater bearing surface and the glass substrate.

In addition, the frame-shaped body of the cover frame and each of the structural components (such as fillers) that may be used are subjected to chamfering 29 processing, so that the tip discharge (ie, arc phenomenon) is generated in the electric field environment of the cavity to cause the cavity. The electric field in the body is abnormally distributed.

Please refer to Figures 7A through 7C for further examples, which are developed in accordance with the embodiment shown in Figure 5, specifically showing various aspects of the fixed engagement of the frame-shaped body with the filler. As shown in Fig. 7A, the frame-shaped body 21c of the cover frame 20c and the filler member 28a can be fixed together by a lock fastener 30a (e.g., a locking screw). In Fig. 7A, the locking screw 30a is fixed to the frame-shaped body 21c in a direction perpendicular to the thickness of the covering frame 20c.

In Fig. 7B, the locking screw 30b is fixed to the frame-shaped body 21d along the thickness direction of the covering frame 20d. Similarly, in Fig. 7C, the locking screw 30c also fixes the filler member 28c to the frame-shaped body 21e along the thickness direction of the covering frame 20e. Since the thickness of the cover frame is very thin, if the locking method shown in FIG. 7A is used, there is a certain difficulty in obtaining a lockable locking screw, and the locking manner shown in FIGS. 7B and 7C can be Solve this problem.

Further, in FIGS. 7B and 7C, the filling members 28b, 28c protrude from the outer edge of the frame body of the frame-shaped bodies 20d, 20e, the filling member 28b is exposed by about 2 mm (as shown in Fig. 7B) or the filling member 28c is exposed. Approximately 4.76 to 4.84 mm is an acceptable implementation.

Referring to FIGS. 8A and 8B, the cover frame realized according to various embodiments of the present invention can be directly placed on the second bearing surface of the heater 14. At 142, the cover frame holder can be removed at this time. Since the cover frame does not have a flange to cover the outer edge of the glass substrate 10, when the heater 14 moves up and down, the cover frame can be raised and lowered with the heater. Therefore, when the heater 14 is raised and lowered, the cover frame does not collide with the heater, and the cover frame does not need to be frequently flipped when the glass substrate 10 is moved. Therefore, the improvement of the operation mode can reduce the glass substrate. The generation of abnormal particles on the surface, thereby improving product yield.

While the invention has been described above in terms of preferred embodiments, it is not intended to limit the invention. Various changes and modifications may be made without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

10‧‧‧ glass substrate

14‧‧‧heater

20a‧‧‧ Covering frame

21a‧‧‧Frame-shaped ontology

28‧‧‧Filling parts

29‧‧‧Chamfering

140‧‧‧First bearing surface

142‧‧‧Second bearing surface

201‧‧‧ top surface

202‧‧‧ bottom

Claims (10)

A deposition apparatus for an optoelectronic semiconductor process, comprising: a heater having a first bearing surface and a second bearing surface disposed around the outer periphery of the first bearing surface, the first bearing surface for supporting a glass a substrate; and a cover frame disposed on the second bearing surface of the heater, the cover frame having a frame-shaped body formed around the hollow region, the glass substrate being placed in an area surrounded by the frame-shaped body The outermost peripheral edge of the inner frame of the cover frame is substantially aligned with the side edge of the first bearing surface of the heater. The deposition apparatus for an optoelectronic semiconductor process according to claim 1, wherein the cover frame has a filler member fixedly engaged with the frame-shaped body of the cover frame, the filler member for filling the frame a gap between the body and the side edge of the first bearing surface of the heater. A deposition apparatus for an optoelectronic semiconductor process according to claim 2, wherein the cover frame has a lock for fixing the filler member to the frame-shaped body. A deposition apparatus for an optoelectronic semiconductor process according to claim 3, wherein the fastener is fixed to the frame body in a direction perpendicular to a thickness of the cover frame. A deposition apparatus for an optoelectronic semiconductor process according to claim 3, wherein the fastener is fixed to the frame body in a direction of a thickness of the cover frame. A deposition apparatus for an optoelectronic semiconductor process according to claim 5, wherein the filler member protrudes from an outer edge of the frame-shaped body frame. The deposition apparatus for an optoelectronic semiconductor process according to claim 1, wherein the cover frame has a top surface and a bottom surface, and a bottom surface of the cover frame is attached to the second bearing surface of the heater. The top surface of the cover frame is substantially aligned with the first bearing surface of the heater. The deposition apparatus for an optoelectronic semiconductor process according to claim 1, wherein the cover frame disposed on the second bearing surface of the heater is raised and lowered as the heater moves up and down. A cover frame suitable for use in a deposition apparatus for an optoelectronic semiconductor process, the deposition apparatus comprising a heater having a bearing surface for supporting the glass substrate, the covering frame comprising: a frame-shaped body surrounding a hollow Forming a region, a hollow region surrounded by the frame-shaped body for placing the glass substrate; and a filler member fixedly engaged with the frame-shaped body, the filler member for filling the frame-shaped body and the heater a gap between the side edges of the bearing surface, wherein the frame-shaped body and the filling member are combined to form a covering frame, and an innermost peripheral edge of the inner peripheral surface is substantially aligned with a side edge of the first bearing surface of the heater. A cover frame suitable for use in a deposition apparatus for an optoelectronic semiconductor process, the deposition apparatus comprising a heater having a bearing surface for supporting the glass substrate, the covering frame comprising: a frame-shaped body surrounding a hollow Formed in the region, the hollow region surrounded by the frame-shaped body is used for placing the glass substrate, wherein the outermost edge of the circumferential surface of the frame-shaped body frame is substantially aligned with the side edge of the first bearing surface of the heater.