TW202340514A - Nozzle type deposition apparatus capable of minimizing the use amount of the raw material to carry out pattern deposition - Google Patents

Nozzle type deposition apparatus capable of minimizing the use amount of the raw material to carry out pattern deposition Download PDF

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TW202340514A
TW202340514A TW111120136A TW111120136A TW202340514A TW 202340514 A TW202340514 A TW 202340514A TW 111120136 A TW111120136 A TW 111120136A TW 111120136 A TW111120136 A TW 111120136A TW 202340514 A TW202340514 A TW 202340514A
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nozzle
suction
pattern
type deposition
raw materials
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TWI833232B (en
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車學讚
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南韓商燦美工程股份有限公司
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45574Nozzles for more than one gas
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/047Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/4557Heated nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers

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  • Chemical Kinetics & Catalysis (AREA)
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Abstract

The present invention relates to a nozzle type deposition apparatus, and more specifically, to a nozzle type deposition apparatus in which a raw material used to deposit a pattern is provided for the pattern deposition according to requirements. The deposition is then carried out to minimize an amount of raw materials being used, which includes supplying the raw materials only to a part required for forming a pattern so that the precise pattern deposition can be carried out and spread of the raw materials can be avoided to fundamentally prevent the raw materials from depositing on other parts. The deposition apparatus further includes a heated gas which can be used to prevent clogging of a discharge pipe and a nozzle that supply the raw materials. Therefore, by supplying the raw material through the nozzle, the deposition apparatus can be constructed simply and effectively.

Description

噴嘴型沉積裝置Nozzle type deposition device

本發明涉及為了在基板形成圖案,吐出用於形成圖案的原料並且照射雷射光以進行沉積的沉積裝置。更詳細地說,涉及在普通的大氣環境下,在基板形成用於各種電路配線的微細電路圖案的沉積裝置,有別於習知電路圖案是在如化學氣相沉積裝置(Chemical Vapor Deposition;CVD)的大規模設備中形成。The present invention relates to a deposition device that discharges a raw material for pattern formation and irradiates laser light to deposit the material in order to form a pattern on a substrate. More specifically, it relates to a deposition device that forms fine circuit patterns for various circuit wirings on a substrate in a normal atmospheric environment, which is different from the conventional circuit patterns that are formed in a chemical vapor deposition device (Chemical Vapor Deposition; CVD). ) are formed in large-scale equipment.

通常,薄膜圖案是形成在用於驅動含有半導體晶片的平板顯示器(包括LCD、OLED)的基板上,並且薄膜圖案通常使用諸如CVD的大規模設備進行沉積。尤其,通常是通過利用光罩的曝光、蝕刻、沉積固定來製造奈米級或微米級單位的微細圖案。Typically, thin film patterns are formed on substrates used to drive flat panel displays (including LCDs, OLEDs) containing semiconductor wafers, and the thin film patterns are typically deposited using large-scale equipment such as CVD. In particular, fine patterns of nanometer-level or micron-level units are usually produced by exposure, etching, and deposition fixation using a photomask.

在包括LCD、OLED的平板顯示器中,一般都是在基板沉積用於表現圖像發光的構成和用於像素的開/關的配線電路,但是,形成電路圖案的基板由於各種原因會出現如微細的電路的斷線/短路等缺陷,並且用於修復這些缺陷的修復過程是必不可少的。對於修復製程,需要切割或連接形成在基板上的圖案。在連接圖案的過程中,需要沉積微細的圖案,但是,以往是將用以形成圖案的金屬原料供應到包括具有缺陷的一定區域,並將需沉積圖案的部位照射雷射光從而進行沉積。In flat panel displays including LCD and OLED, components for expressing image light emission and wiring circuits for turning on/off pixels are generally deposited on the substrate. However, the substrate on which the circuit pattern is formed may have fine particles due to various reasons. of circuits have defects such as broken wires/short circuits, and a repair process for repairing these defects is essential. For the repair process, the pattern formed on the substrate needs to be cut or connected. In the process of connecting patterns, it is necessary to deposit a fine pattern. However, in the past, the metal raw material used to form the pattern was supplied to a certain area including the defect, and the area where the pattern was to be deposited was irradiated with laser light to perform deposition.

韓國專利第10-0739443號揭露了一種習知的薄膜圖案沉積裝置,其在薄膜沉積用的腔體內供應金屬原料氣體以形成局部金屬原料之氣體環境,並在需形成圖案的位置照射雷射光以進行沉積。這種薄膜圖案沉積裝置不是在大規模的腔內形成,而是在大氣中的某些區域形成金屬原料之氣體環境,從而具有有效地進行局部薄膜沉積的優點,但是由於必須將一定的區域內形成為金屬原料之氣體環境,因此,金屬原料的使用量可能過多,並且為了形成金屬原料之氣體環境而需要額外的組件(例如,氣幕),並且隨著在一定區域內形成金屬原料之氣體環境,以致於在不必要的部分沉積金屬原料,從而存在薄膜圖案形成過程中引起另一個缺陷的問題,並且在有效沉積微細的圖案當中存在限制,還存在可能損壞易受熱的基板(例如,柔性基板)的問題。Korean Patent No. 10-0739443 discloses a conventional thin film pattern deposition device, which supplies metal raw material gas in a cavity for thin film deposition to form a local gas environment of the metal raw material, and irradiates laser light at the location where the pattern needs to be formed. Perform deposition. This thin film pattern deposition device is not formed in a large-scale cavity, but forms a gas environment of metal raw materials in certain areas of the atmosphere, thereby having the advantage of effectively performing local thin film deposition. However, it must be placed in a certain area. A gaseous environment of metal raw materials is formed. Therefore, the amount of metal raw materials used may be too much, and additional components (for example, gas curtains) are required to form a gaseous environment of metal raw materials, and as the gas of metal raw materials is formed in a certain area The environment causes metal raw materials to be deposited in unnecessary parts, thereby causing another defect in the film pattern formation process, and there are limitations in effectively depositing fine patterns, and there is also the possibility of damaging substrates that are susceptible to heat (e.g., flexible substrate) problem.

《要解決的技術問題》"Technical Problems to be Solved"

為了解決上述的問題,本發明提供一種噴嘴型沉積裝置,其將用於沉積圖案的原料按所需提供的圖案沉積,並進行沉積可最小化原料的使用量,以及根據僅在需形成圖案的部位供給原料,從而可進行精確的圖案沉積,並且防止原料的擴散,可從根源上防止原料沉積到其他部位,又利用加熱氣體可防止供給原料的排送管及噴嘴的堵塞,並且根據以噴嘴方式供給原料,從而可簡易並有效地構成沉積裝置;此外,本發明可防止通過吸嘴部的原料擴散到其他部位,並且允許加熱氣體集中供給到沉積部分,從而可防止通過設置在上部的吸嘴部和設置在基板上部的吸入部的原料和氣體擴散。 《技術方案》 In order to solve the above-mentioned problems, the present invention provides a nozzle-type deposition device that deposits raw materials for pattern deposition according to the required pattern, and performs deposition to minimize the usage of raw materials, and to only form patterns when needed. The raw material is supplied to each position, thereby enabling precise pattern deposition and preventing the spread of the raw material. It can prevent the raw material from being deposited in other parts from the root. The heated gas can also prevent the clogging of the discharge pipe and nozzle that supplies the raw material, and according to the nozzle In addition, the present invention can prevent the raw materials passing through the suction nozzle from diffusing to other parts, and allows the heated gas to be concentratedly supplied to the deposition part, thereby preventing the raw materials from passing through the suction nozzle provided at the upper part. The raw material and gas are diffused in the mouth part and the suction part provided on the upper part of the base plate. "Technical Plan"

為了達到上述的目的,本發明的噴嘴型沉積裝置,用於在基板沉積圖案的沉積裝置中,包括:雷射模組,用於在所述基板照射雷射光以形成圖案;第一噴嘴,用於在所述基板吐出需沉積的原料以沉積圖案;第二噴嘴,形成在所述第一噴嘴的外框部,噴射以預定溫度加熱的氣體;噴嘴外殼,在內部收納所述第一噴嘴及所述第二噴嘴;加熱部,收納在所述噴嘴外殼內部,用於加熱所述第一噴嘴及第二噴嘴;以及吸嘴部, 形成在所述噴嘴外殼,用於吸入從所述第一噴嘴噴射之後未沉積的原料和從所述第二噴嘴噴射的部分氣體。In order to achieve the above objects, the nozzle-type deposition device of the present invention is used in a deposition device for depositing patterns on a substrate, including: a laser module for irradiating laser light on the substrate to form a pattern; a first nozzle, The raw material to be deposited is ejected on the substrate to deposit the pattern; the second nozzle is formed on the outer frame of the first nozzle and injects gas heated at a predetermined temperature; the nozzle housing accommodates the first nozzle inside. The second nozzle; a heating portion housed inside the nozzle housing for heating the first nozzle and the second nozzle; and a suction nozzle portion formed on the nozzle housing for sucking in the water from the first nozzle. The raw material that is not deposited after the nozzle is injected and part of the gas injected from the second nozzle.

另外,所述第一噴嘴插入並安裝在所述第二噴嘴的內部,從所述第二噴嘴噴出的氣體沿所述第一噴嘴的外框部噴射。In addition, the first nozzle is inserted and installed inside the second nozzle, and the gas ejected from the second nozzle is ejected along the outer frame of the first nozzle.

另外,所述第一噴嘴從所述第二噴嘴的末端以預定的長度突出地設置,所述第二噴嘴從所述噴嘴外殼的末端以預定的長度突出地設置。In addition, the first nozzle is protruded by a predetermined length from the end of the second nozzle, and the second nozzle is protruded by a predetermined length from the end of the nozzle housing.

另外,通過所述第二噴嘴噴出的氣體沿所述第一噴嘴的外框部噴射,並噴射至比沉積到所述基板的圖案更廣的一預定區域。In addition, the gas ejected through the second nozzle is ejected along the outer frame of the first nozzle and to a predetermined area wider than the pattern deposited on the substrate.

另外,所述吸嘴部的末端形成為位於所述第一噴嘴的末端與所述第二噴嘴的末端之間。In addition, the end of the suction nozzle is formed between the end of the first nozzle and the end of the second nozzle.

另外,所述噴嘴外殼是由金屬材料形成的塊狀,所述噴嘴型沉積裝置還包括:收納孔,用於收納所述第一噴嘴、所述第二噴嘴及所述加熱部的其中二個以上。In addition, the nozzle housing is in a block shape formed of a metal material, and the nozzle type deposition device further includes a storage hole for receiving two of the first nozzle, the second nozzle and the heating part. above.

另外,在所述噴嘴外殼的外框部的部分或者全部配置一熱屏蔽部件,用於防止所述噴嘴外殼產生的熱傳遞到外部。In addition, a heat shield member is disposed on part or all of the outer frame of the nozzle housing to prevent heat generated by the nozzle housing from being transferred to the outside.

另外,所述吸嘴部設置為圍繞所述熱屏蔽部件的外框部的圓柱體或複數個噴嘴的形式。In addition, the suction nozzle part is provided in the form of a cylinder or a plurality of nozzles surrounding the outer frame part of the heat shielding member.

另外,所述噴嘴型沉積裝置,還包括:吸入部,用以吸入從所述第一噴嘴及所述第二噴嘴吐出/噴出的原料及氣體中用於沉積圖案後的剩餘原料及氣體。In addition, the nozzle-type deposition device further includes a suction part for sucking in the remaining raw materials and gases after being used to deposit patterns among the raw materials and gases ejected/discharged from the first nozzle and the second nozzle.

另外,所述吸入部以形成在基板的圖案為中心,在與所述第一噴嘴、所述第二噴嘴及所述吸嘴部相對的位置以曲線形態配置。In addition, the suction part is arranged in a curved shape at a position facing the first nozzle, the second nozzle, and the suction nozzle part, centered on the pattern formed on the substrate.

另外,所述第一噴嘴、所述第二噴嘴及所述吸嘴部傾斜地安裝在所述基板,在所述吸入部形成二個以上的吸入流路,所述吸入流路用於吸入從所述第一噴嘴及所述第二噴嘴吐出/噴出的原料及氣體中用於沉積圖案後的剩餘原料及氣體,並且所述吸嘴部用於吸入未由所述吸入部吸入的原料及氣體。 《發明效果》 In addition, the first nozzle, the second nozzle and the suction nozzle part are installed obliquely on the base plate, and two or more suction flow paths are formed in the suction part, and the suction flow paths are used to suck in from all parts of the suction part. Among the raw materials and gases ejected/ejected by the first nozzle and the second nozzle, the remaining raw materials and gases after depositing patterns are used, and the suction nozzle part is used to suck in the raw materials and gases that are not sucked by the suction part. "Invention Effect"

如上所述結構的本發明根據以噴嘴形態供給沉積所需的原料,可最小化原料的使用量,並且具有可極小化浪費原料的效果。The present invention structured as described above has the effect of supplying raw materials required for deposition in the form of a nozzle, thereby minimizing the amount of raw materials used and minimizing waste of raw materials.

另外,根據通過噴嘴向圖案沉積中所需的部位供給原料,可精確、準確地形成微細的圖案。In addition, by supplying the raw material through the nozzle to the location required for pattern deposition, fine patterns can be formed accurately and accurately.

另外,將加熱氣體不僅供給到供給原料的噴嘴的外框部,而且供給到形成沉積的一定區域,從而可從根源上防止噴嘴堵塞及在不必要的部位沉積原料。In addition, the heating gas is supplied not only to the outer frame of the nozzle that supplies the raw material, but also to a certain area where the deposition is formed, thereby preventing the nozzle from being clogged and the raw material from being deposited in unnecessary locations.

另外,通過噴嘴形態的沉積裝置可小型化製造沉積裝置的結構,從而使沉積裝置的運作及安裝方便,並可有效地執行維護。In addition, the deposition device in the form of a nozzle can be used to miniaturize the structure of the deposition device, so that the operation and installation of the deposition device are convenient, and maintenance can be effectively performed.

另外,在上部防止通過吸嘴部的加熱氣體和原料擴散,並且在基板附近通過吸入部回收沉積後剩餘的原料,可以提高圖案沉積的精緻度。In addition, the upper part prevents the diffusion of heated gas and raw materials through the suction nozzle part, and recovers the remaining raw materials after deposition through the suction part near the substrate, which can improve the precision of pattern deposition.

以下,參照附圖對本發明的噴嘴型沉積裝置進行詳細地說明。Hereinafter, the nozzle type deposition apparatus of the present invention will be described in detail with reference to the drawings.

圖1是顯示根據本發明一實施例之噴嘴型沉積裝置的立體圖;圖2是顯示根據本發明一實施例之噴嘴型沉積裝飾中的第一噴嘴、 第二噴嘴和吸嘴部的放大立體圖;圖3是顯示通過本發明的噴嘴型沉積裝置形成圖案的示意圖;圖4是顯示根據本發明一實施例之噴嘴型沉積裝置的吸入部的立體圖;以及圖5是顯示根據本發明一實施例之包括噴嘴型沉積裝置的吸入部形成圖案沉積的示意圖。1 is a perspective view showing a nozzle-type deposition device according to an embodiment of the present invention; FIG. 2 is an enlarged perspective view showing a first nozzle, a second nozzle and a suction nozzle portion in a nozzle-type deposition decoration according to an embodiment of the present invention; 3 is a schematic diagram showing pattern formation by a nozzle-type deposition device according to the present invention; FIG. 4 is a perspective view showing a suction portion of a nozzle-type deposition device according to an embodiment of the present invention; and FIG. 5 is a schematic diagram showing a suction portion of a nozzle-type deposition device according to an embodiment of the present invention. Schematic illustration of pattern deposition including the suction portion of a nozzle-type deposition device.

沉積圖案,尤其是沉積微細圖案的製程是在例如CVD的大規模設備形成,並且具有在大氣中沉積薄膜的薄膜沉積腔裝置,習知的CVD設備雖然結構簡單,但是需要形成局部的金屬原料的氣體環境,並且除了用於圖案沉積的少量金屬原料之外,剩餘的金屬原料會被扔掉,因此存在浪費金屬原料的嚴重問題。另外,為了形成局部的金屬原料的氣體環境,需要用於阻斷大氣的附加結構,因此,具有結構複雜的問題。The deposition pattern, especially the process of depositing fine patterns, is formed in large-scale equipment such as CVD, and has a thin film deposition chamber device for depositing thin films in the atmosphere. Although the conventional CVD equipment has a simple structure, it requires the formation of local metal raw materials. Gas environment, and except for a small amount of metal raw materials used for pattern deposition, the remaining metal raw materials will be thrown away, so there is a serious problem of wasting metal raw materials. In addition, in order to form a local gas environment of the metal raw material, an additional structure for blocking the atmosphere is required, so there is a problem of a complicated structure.

本發明的噴嘴型沉積裝置包括:雷射模組100,在需沉積形成圖案的基板10的原料30照射用於加熱並進行沉積的雷射光;第一噴嘴200,以噴嘴形態吐出作為在基板10用於沉積圖案的原材料的原料30;第二噴嘴300,用以防止向第一噴嘴200移動的原料30硬化而可能發生的噴嘴堵塞,並且將包括沉積圖案的部位的一定區域與外部斷絕,以及形成在第一噴嘴200的外框部並噴射以預定的溫度加熱的加熱氣體40;噴嘴外殼400,在內部收納第一噴嘴200及第二噴嘴300;加熱部500,收納在噴嘴外殼400內部用於加熱第一噴嘴200及第二噴嘴300;以及吸嘴部700,形成在所述噴嘴外殼,用以吸入從所述第一噴嘴200、所述第二噴嘴300噴射之後未沉積的原料和氣體。The nozzle-type deposition device of the present invention includes: a laser module 100, which irradiates the raw material 30 of the substrate 10 that needs to be deposited to form a pattern with laser light for heating and deposition; a raw material 30 for depositing the pattern; a second nozzle 300 to prevent nozzle clogging that may occur due to the hardening of the raw material 30 moving toward the first nozzle 200, and to isolate a certain area including the deposited pattern from the outside; and It is formed on the outer frame of the first nozzle 200 and injects the heating gas 40 heated at a predetermined temperature; the nozzle housing 400 houses the first nozzle 200 and the second nozzle 300 inside; and the heating part 500 is housed inside the nozzle housing 400 for use. After heating the first nozzle 200 and the second nozzle 300; and a suction nozzle portion 700 is formed on the nozzle shell to suck in the raw materials and gases that have not been deposited after being sprayed from the first nozzle 200 and the second nozzle 300. .

本發明的雷射模組100是從第一噴嘴200向在基板10上需沉積的位置吐出的原料30供給雷射光,所述雷射模組為用於將原料30進行加熱並硬化從而進行沉積的構件。原料30根據在基板需形成的圖案而不同,例如,使用鎢(W)時,需照射對應的雷射光。因此,根據雷射光的波長、輸出、脈衝寬度等,對於原料30的材料有必要選擇可供給適合的雷射光的雷射模組100。另外,為了根據原料30的材料供給適當的雷射光,在選擇雷射模組100之後,為了向在基板10的沉積圖案的位置照射雷射光,也可以通過光學模組(圖中未顯示)來變更雷射光的路徑。當然,除了可通過光學模組變更雷射光的路徑,如果基板10的大小較小,也可以移動基板10。The laser module 100 of the present invention supplies laser light from the first nozzle 200 to the raw material 30 ejected at the position to be deposited on the substrate 10. The laser module is used to heat and harden the raw material 30 for deposition. of components. The raw material 30 differs according to the pattern to be formed on the substrate. For example, when tungsten (W) is used, corresponding laser light needs to be irradiated. Therefore, according to the wavelength, output, pulse width, etc. of the laser light, it is necessary to select the laser module 100 that can provide suitable laser light for the material of the raw material 30 . In addition, in order to supply appropriate laser light according to the material of the raw material 30, after selecting the laser module 100, in order to irradiate the laser light to the position of the deposited pattern on the substrate 10, an optical module (not shown in the figure) may also be used. Change the path of laser light. Of course, in addition to changing the path of the laser light through the optical module, if the size of the substrate 10 is small, the substrate 10 can also be moved.

本發明的第一噴嘴200是將原料30吐出至基板10的需沉積的位置的構件。通過第一噴嘴200吐出的原料30來自例如用來氣化固體金屬的起泡器(圖中未顯示)或者變換為粉末形態的構件,並通過第一噴嘴200後端的原料連接部210接收。由起泡器變換的氣體或者粉末化的原料通過排送管流路傳遞至第一噴嘴200,通過排送管流路及第一噴嘴200吐出至基板的原料30根據材料而不同,但是,具有降到一定的溫度以下時硬化的特性。亦即,為了防止排送管流路及第一噴嘴200堵塞,維持一定溫度以上是非常重要的。第一噴嘴200的材料可根據吐出的原料30而不同,但是,為了有利於維持一定的溫度以上,較佳使用熱傳導率高並且耐久性高的金屬材料。當然,為了防止原料30硬化,較佳使用表面粗糙度小的材料。另外,噴嘴的直徑根據沉積的圖案的寬度而不同,但是製作成微細是有利的。但是,噴嘴的直徑越小,微量的原料30硬化也會產生噴嘴堵塞,因此,較佳考慮圖案的寬度和需吐出的原料30的材料等進行確定。The first nozzle 200 of the present invention is a component that discharges the raw material 30 to a position on the substrate 10 where deposition is required. The raw material 30 ejected through the first nozzle 200 comes from, for example, a bubbler (not shown in the figure) used to vaporize solid metal or a component converted into a powder form, and is received through the raw material connection portion 210 at the rear end of the first nozzle 200 . The gas converted by the bubbler or the powdered raw material is delivered to the first nozzle 200 through the discharge pipe flow path. The raw material 30 discharged to the substrate through the discharge pipe flow path and the first nozzle 200 differs depending on the material, but has The property of hardening when dropped below a certain temperature. That is, in order to prevent the discharge pipe flow path and the first nozzle 200 from clogging, it is very important to maintain the temperature above a certain level. The material of the first nozzle 200 may vary depending on the raw material 30 to be discharged. However, in order to facilitate maintaining a temperature above a certain level, it is preferable to use a metal material with high thermal conductivity and high durability. Of course, in order to prevent the raw material 30 from hardening, it is better to use materials with small surface roughness. In addition, the diameter of the nozzle varies depending on the width of the pattern to be deposited, but it is advantageous to make it fine. However, the smaller the diameter of the nozzle, the hardening of a trace amount of the raw material 30 will cause clogging of the nozzle. Therefore, it is better to determine the width of the pattern and the material of the raw material 30 to be discharged.

本發明的第二噴嘴300是配置在第一噴嘴200的外框部並根據第一噴嘴200的外框部噴射依預定的溫度加熱的加熱氣體40的構件。加熱氣體40通過噴嘴外殼400後端的加熱氣體連接部310供給。如上所述,第一噴嘴200為氣化或者粉末形態的原料30通過的構件,當降到一定溫度以下時,原料30會硬化從而發生噴嘴堵塞的現象。第二噴嘴300是為了防止這些噴嘴堵塞,以向第一噴嘴200的外框部噴射按一定的溫度加熱的加熱氣體40,從而將第一噴嘴200維持到原料30不發生硬化的溫度以上的構件。此外,加熱氣體40噴射到包括沉積在基板10上的圖案20的一部分的預定區域50,從而可以額外獲得局部阻擋效果。例如,如圖1、圖2所示,在第二噴嘴300內部插入安裝第一噴嘴200,則供給到第二噴嘴300的加熱氣體40整體上加熱第一噴嘴200,因此,如上所述第二噴嘴300可從根源上防止由於原料30的硬化導致的噴嘴堵塞。當然,在第一噴嘴200的外框部配置複數個第二噴嘴300,也可以得到相同的效果,但是,相比於將第一噴嘴200插入到內部的效果較低。另外,從第二噴嘴300噴射的加熱氣體40(如圖3所示)沿第一噴嘴200的外框部到達基板100進行噴射,則用於沉積圖案並且剩餘的原料30被硬化在圖案之外的部位,從而可從根源上防止產生不良品。另外,沉積圖案時形成局部的原料30的氣體環境有利於具有與外部阻斷的效果。通過第二噴嘴300噴射的加熱氣體40防止與原料30的反應,同時極大化與外部的阻斷效果,較佳地使用惰性氣體。另外,較佳地,使用分子量大的惰性氣體氬氣(Ar)來防止加熱氣體40的溫度急劇降低,並且提高與外部的阻斷效果。The second nozzle 300 of the present invention is arranged on the outer frame of the first nozzle 200 and injects the heating gas 40 heated at a predetermined temperature based on the outer frame of the first nozzle 200 . The heating gas 40 is supplied through the heating gas connection portion 310 at the rear end of the nozzle housing 400 . As mentioned above, the first nozzle 200 is a member through which the vaporized or powdered raw material 30 passes. When the temperature drops below a certain temperature, the raw material 30 will harden and the nozzle will become clogged. The second nozzle 300 is a member that injects the heating gas 40 heated at a certain temperature into the outer frame of the first nozzle 200 to maintain the first nozzle 200 at a temperature higher than the temperature at which the raw material 30 does not harden in order to prevent these nozzles from being clogged. . In addition, the heated gas 40 is sprayed to a predetermined area 50 including a part of the pattern 20 deposited on the substrate 10, so that a local blocking effect can be additionally obtained. For example, as shown in FIGS. 1 and 2 , if the first nozzle 200 is inserted and installed inside the second nozzle 300 , the heating gas 40 supplied to the second nozzle 300 will heat the first nozzle 200 as a whole. Therefore, as described above, the second nozzle 200 will be heated. The nozzle 300 can fundamentally prevent the nozzle from clogging due to the hardening of the raw material 30 . Of course, the same effect can be obtained by arranging a plurality of second nozzles 300 in the outer frame of the first nozzle 200, but the effect is lower than that of inserting the first nozzle 200 inside. In addition, when the heated gas 40 (as shown in FIG. 3 ) ejected from the second nozzle 300 reaches the substrate 100 along the outer frame of the first nozzle 200, it is used to deposit the pattern and the remaining raw material 30 is hardened outside the pattern. parts, thus preventing the occurrence of defective products from the source. In addition, the gas environment in which the local raw material 30 is formed when depositing the pattern is beneficial to the blocking effect from the outside. The heating gas 40 injected through the second nozzle 300 prevents reaction with the raw material 30 and maximizes the blocking effect with the outside. It is preferable to use an inert gas. In addition, it is preferable to use argon (Ar), an inert gas with a large molecular weight, to prevent the temperature of the heating gas 40 from rapidly decreasing and to improve the blocking effect from the outside.

本發明的噴嘴外殼400是形成本發明的噴嘴型沉積裝置的本體並且收納第一噴嘴200和第二噴嘴300及後述的加熱部500的構件。噴嘴外殼400在內部需收納包括第一噴嘴200直至加熱部500,因此,當然需要包括固定第一噴嘴200、第二噴嘴300及加熱部500的工具。將噴嘴外殼400由一個塊狀體製作之後配置可以收納第一噴嘴200、第二噴嘴300及加熱部500的收納孔410,則具有將加熱部500產生的熱可以完全地傳遞至第一噴嘴200及第二噴嘴300的優點;此外,不需要另外的用於固定的工具,僅將一個噴嘴外殼400固定在設備即可,因此具有便於安裝及維護的優點。由於加熱部500產生的熱傳遞至整個噴嘴外殼400的本體,因此,較佳將熱屏蔽部件420配置在噴嘴外殼400的外部,以使熱傳遞不到設備。The nozzle housing 400 of the present invention is a member that forms the main body of the nozzle-type deposition apparatus of the present invention and accommodates the first nozzle 200 and the second nozzle 300 as well as the heating unit 500 described below. The nozzle housing 400 needs to accommodate the first nozzle 200 to the heating part 500 inside. Therefore, it is of course necessary to include tools for fixing the first nozzle 200, the second nozzle 300 and the heating part 500. After the nozzle housing 400 is made of a block and is provided with a storage hole 410 that can accommodate the first nozzle 200 , the second nozzle 300 and the heating part 500 , the heat generated by the heating part 500 can be completely transferred to the first nozzle 200 and the advantages of the second nozzle 300; in addition, no additional tools for fixing are required, and only one nozzle housing 400 can be fixed to the equipment, so it has the advantage of easy installation and maintenance. Since the heat generated by the heating part 500 is transferred to the entire body of the nozzle housing 400, it is preferable to dispose the heat shielding member 420 outside the nozzle housing 400 so that the heat cannot be transferred to the device.

本發明的加熱部500是將第一噴嘴200及第二噴嘴300加熱至一定溫度以上的構件。亦即使由第二噴嘴300供給加熱至一定溫度以上的加熱氣體40,由於第二噴嘴300本身具有一長度,並且加熱氣體40到達基板10時需維持並達到一定溫度以上,因此,為了維持加熱氣體40的溫度而需要加熱部500。另外,較佳地,加熱部500不是僅安裝在一側,也可以以第二噴嘴300為中心對稱地安裝。安裝複數個可極大化加熱效果,但是製造費增加,因此,根據精確的溫度調整和製造費用,較佳根據安裝本發明的噴嘴型沉積裝置的環境進行選擇。The heating unit 500 of the present invention is a member that heats the first nozzle 200 and the second nozzle 300 to a temperature above a certain level. That is to say, even if the second nozzle 300 supplies the heating gas 40 heated to a certain temperature or above, since the second nozzle 300 itself has a length, and the heating gas 40 needs to maintain and reach above a certain temperature when it reaches the substrate 10, therefore, in order to maintain the heating gas A heating unit 500 is required for a temperature of 40°C. In addition, preferably, the heating part 500 is not only installed on one side, but may also be installed symmetrically with the second nozzle 300 as the center. Installing a plurality of them can maximize the heating effect, but the manufacturing cost increases. Therefore, according to the precise temperature adjustment and manufacturing cost, it is better to select according to the environment where the nozzle type deposition device of the present invention is installed.

本發明的吸嘴部700形成在所述噴嘴外殼400的外部,用於吸入從第一噴嘴200噴射之後未沉積的原料以及從第二噴嘴300噴射的氣體的一部分60。本發明的噴嘴型沉積裝置為沒有腔的結構,通過第二噴嘴300噴射的加熱氣體40在包括沉積圖案的部位的一定區域中將其與外部隔斷,然而存在未沉積的原料和加熱氣體40擴散到外部的缺點。如果未沉積的原料離開加熱氣體40的區域,則其沉積到基板的其他部位上將導致短路或斷路,從而導致修復成功率降低的問題。因此,將吸嘴部700的末端設置在第一噴嘴200和第二噴嘴300的末端之間,可以避免雷射模組100照射的雷射光對從第一噴嘴200噴射的原料產生干擾,同時可以防止原料和加熱氣體40擴散到外部。為了使加熱氣體40能夠到達基板10的一定區域,在通過使加熱氣體40的噴射壓力大於吸嘴部700的吸力來防止加熱氣體40擴散到外部的同時,用加熱氣體40包圍一定區域可以最大程度地提高修復過程的效率。此外,較佳地,吸嘴部700以圓柱體的形狀而設置,但是也可以以把複數個噴嘴對稱地配置到噴嘴外殼100的外框的形式設置。在複數個噴嘴配置的情況下,可能發生有些噴嘴吸不上去的情況,但是這具有通過進行各個噴嘴的吸力的調節來根據修復過程的情況以進行操作的優點。另外,以下說明的在基板附近的吸入部600,主要用來吸入原料和加熱氣體40,並且通過在第一噴嘴200和第二噴嘴300位置上方的吸嘴部700吸入原料和加熱氣體40,可以完全防止原料等洩漏到外部。The suction nozzle part 700 of the present invention is formed outside the nozzle housing 400 and is used to suck in the raw material that has not been deposited after being sprayed from the first nozzle 200 and a part 60 of the gas sprayed from the second nozzle 300 . The nozzle-type deposition device of the present invention has a structure without a cavity. The heated gas 40 injected through the second nozzle 300 isolates it from the outside in a certain area including the portion of the deposition pattern. However, there are undeposited raw materials and the heated gas 40 diffuses to external shortcomings. If the undeposited raw material leaves the area of the heating gas 40, its deposition on other parts of the substrate will cause a short circuit or an open circuit, thereby leading to a problem of reduced repair success rate. Therefore, disposing the end of the suction nozzle 700 between the ends of the first nozzle 200 and the second nozzle 300 can prevent the laser light irradiated by the laser module 100 from interfering with the raw materials ejected from the first nozzle 200, and at the same time, Raw materials and heating gas 40 are prevented from spreading to the outside. In order to enable the heating gas 40 to reach a certain area of the substrate 10 , while preventing the heating gas 40 from diffusing to the outside by making the injection pressure of the heating gas 40 greater than the suction force of the suction nozzle 700 , surrounding the certain area with the heating gas 40 can maximize greatly improve the efficiency of the repair process. In addition, the suction nozzle part 700 is preferably provided in a cylindrical shape, but it may be provided in a form in which a plurality of nozzles are symmetrically arranged on the outer frame of the nozzle housing 100 . When a plurality of nozzles are arranged, some nozzles may not be able to suction, but this has the advantage of adjusting the suction power of each nozzle so that the operation can be performed according to the conditions of the repair process. In addition, the inhalation part 600 described below near the substrate is mainly used to inhale the raw material and the heating gas 40, and the raw material and the heating gas 40 can be inhaled through the suction nozzle part 700 above the first nozzle 200 and the second nozzle 300. Completely prevents raw materials, etc. from leaking to the outside.

本發明的吸入部600是用於吸收從第一噴嘴200吐出的原料30沉積圖案後剩餘的原料30以及噴射至第二噴嘴300的加熱氣體40並且向外部排出的構件。如圖4所示的一示例,較佳地,吸入部600配置成圍繞第二噴嘴300的外框部的形態。另外,為了有效地吸入原料30及加熱氣體40,較佳地,吸入流路610形成複數個。另外,因為圖案20的沉積需要照射雷射光,因此,較佳將第一噴嘴200傾斜地安裝在基板之後以垂直於基板照射雷射而精確地沉積。因此,吸入流路610對應於傾斜的第一噴嘴200被傾斜地形成,以具有不向外部散開並且可有效地吸入的效果。另外,如圖5所示,將噴嘴外殼400傾斜地安裝之後,將吸入部600安裝在位於相對面,則具有可更有效地吸入原料30和加熱氣體40的效果。The suction part 600 of the present invention is a member that absorbs the raw material 30 remaining after depositing the pattern on the raw material 30 discharged from the first nozzle 200 and the heated gas 40 injected to the second nozzle 300, and discharges the raw material 30 to the outside. As shown in an example in FIG. 4 , preferably, the suction part 600 is arranged in a shape surrounding the outer frame part of the second nozzle 300 . In addition, in order to effectively suck in the raw material 30 and the heating gas 40, it is preferable to form a plurality of suction flow paths 610. In addition, since the deposition of the pattern 20 requires irradiation of laser light, it is preferable to install the first nozzle 200 obliquely behind the substrate to irradiate the laser perpendicularly to the substrate for precise deposition. Therefore, the suction flow path 610 is formed obliquely corresponding to the inclination of the first nozzle 200 so as to have the effect of not spreading to the outside and enabling efficient suction. In addition, as shown in FIG. 5 , after the nozzle housing 400 is installed obliquely, and the suction part 600 is installed on the opposite surface, there is an effect that the raw material 30 and the heating gas 40 can be sucked in more effectively.

10:基板 20:圖案 30:原料 40:加熱氣體 50:預定區域 60:氣體的一部分 100:雷射模組 200:第一噴嘴 210:原料接收部 300:第二噴嘴 310:加熱氣體連接部 400:噴嘴外殼 410:收納孔 420:熱屏蔽部件 500:加熱部 600:吸入部 610:吸入流路 700:吸嘴部 10:Substrate 20: Pattern 30:Raw materials 40: Heating gas 50: Reservation area 60: Part of the gas 100:Laser module 200: first nozzle 210: Raw material receiving department 300: Second nozzle 310: Heating gas connection part 400:Nozzle housing 410: Storage hole 420:Heat shielding components 500:Heating department 600: Inhalation part 610: Suction flow path 700: Nozzle part

圖1是顯示根據本發明一實施例之噴嘴型沉積裝置的立體圖; 圖2是顯示根據本發明一實施例之噴嘴型沉積裝飾中的第一噴嘴、 第二噴嘴和吸嘴部的放大立體圖; 圖3是顯示通過本發明的噴嘴型沉積裝置形成圖案的示意圖; 圖4是顯示根據本發明一實施例之噴嘴型沉積裝置的吸入部的立體圖;以及 圖5是顯示根據本發明一實施例之包括噴嘴型沉積裝置的吸入部形成圖案沉積的示意圖。 Figure 1 is a perspective view showing a nozzle type deposition device according to an embodiment of the present invention; 2 is an enlarged perspective view showing the first nozzle, the second nozzle and the suction nozzle part in the nozzle-type deposition decoration according to an embodiment of the present invention; 3 is a schematic diagram showing pattern formation by the nozzle-type deposition device of the present invention; Figure 4 is a perspective view showing the suction part of the nozzle type deposition device according to one embodiment of the present invention; and FIG. 5 is a schematic diagram illustrating pattern deposition formed by a suction portion of a nozzle-type deposition device according to an embodiment of the present invention.

200:第一噴嘴 200: first nozzle

210:原料接收部 210: Raw material receiving department

300:第二噴嘴 300: Second nozzle

310:加熱氣體連接部 310: Heating gas connection part

400:噴嘴外殼 400:Nozzle housing

410:收納孔 410: Storage hole

420:熱屏蔽部件 420:Heat shielding components

500:加熱部 500:Heating department

700:吸嘴部 700: Nozzle part

Claims (11)

一種噴嘴型沉積裝置,用於在基板沉積圖案的沉積裝置中,包括: 一雷射模組,用於在所述基板照射雷射光以形成圖案; 一第一噴嘴,用於在所述基板吐出需沉積的原料以沉積圖案; 一第二噴嘴,形成在所述第一噴嘴的外框部,用於噴射以預定溫度加熱的氣體; 一噴嘴外殼,在內部收納所述第一噴嘴及所述第二噴嘴; 一加熱部,收納在所述噴嘴外殼內部,用於加熱所述第一噴嘴及所述第二噴嘴;以及 一吸嘴部, 形成在所述噴嘴外殼,用於吸入從所述第一噴嘴噴射之後未沉積的原料和從所述第二噴嘴噴射的部分氣體。 A nozzle-type deposition device used in a deposition device for depositing patterns on a substrate, including: A laser module for irradiating laser light on the substrate to form a pattern; a first nozzle, used to spit out the raw material to be deposited on the substrate to deposit a pattern; a second nozzle, formed on the outer frame of the first nozzle, for injecting gas heated at a predetermined temperature; a nozzle housing that accommodates the first nozzle and the second nozzle inside; a heating part, housed inside the nozzle housing, for heating the first nozzle and the second nozzle; and A suction nozzle portion is formed on the nozzle housing for sucking in the raw material that has not been deposited after being sprayed from the first nozzle and part of the gas sprayed from the second nozzle. 根據請求項1所述的噴嘴型沉積裝置,其中,所述第一噴嘴插入並安裝在所述第二噴嘴的內部,從所述第二噴嘴噴出的氣體沿所述第一噴嘴的外框部噴射。The nozzle type deposition device according to claim 1, wherein the first nozzle is inserted and installed inside the second nozzle, and the gas ejected from the second nozzle flows along the outer frame of the first nozzle. Squirt. 根據請求項2所述的噴嘴型沉積裝置,其中,所述第一噴嘴從所述第二噴嘴的末端以預定的長度突出地設置,所述第二噴嘴從所述噴嘴外殼的末端以預定的長度突出地設置。The nozzle type deposition device according to claim 2, wherein the first nozzle is protrudingly provided with a predetermined length from an end of the second nozzle, and the second nozzle is protruded with a predetermined length from an end of the nozzle housing. The length is set prominently. 根據請求項2所述的噴嘴型沉積裝置,其中,通過所述第二噴嘴噴出的氣體沿所述第一噴嘴的外框部噴射,並且噴射至比沉積到所述基板的圖案更廣的一預定區域。The nozzle type deposition apparatus according to claim 2, wherein the gas ejected through the second nozzle is ejected along the outer frame portion of the first nozzle and to a wider area than the pattern deposited on the substrate. Reserve area. 根據請求項1所述的噴嘴型沉積裝置,其中,所述吸嘴部的末端 形成為位於所述第一噴嘴的末端與所述第二噴嘴的末端之間。The nozzle type deposition apparatus according to claim 1, wherein the end of the suction nozzle is formed between the end of the first nozzle and the end of the second nozzle. 根據請求項1所述的噴嘴型沉積裝置,其中,所述噴嘴外殼是由金屬材料形成的塊狀,所述噴嘴型沉積裝置還包括: 一收納孔,用於收納所述第一噴嘴、所述第二噴嘴及所述加熱部的其中二個以上。 The nozzle-type deposition device according to claim 1, wherein the nozzle housing is a block formed of metal material, and the nozzle-type deposition device further includes: A storage hole is used to receive at least two of the first nozzle, the second nozzle and the heating part. 根據請求項6所述的噴嘴型沉積裝置,其中,在所述噴嘴外殼的外框部的部分或者全部配置一熱屏蔽部件,用於防止所述噴嘴外殼產生的熱傳遞到外部。The nozzle type deposition apparatus according to claim 6, wherein a heat shield member is disposed on part or all of the outer frame of the nozzle housing to prevent heat generated by the nozzle housing from being transferred to the outside. 根據請求項7所述的噴嘴型沉積裝置,其中,所述吸嘴部設置為圍繞所述熱屏蔽部件的外框部的圓柱體或複數個噴嘴的形式。The nozzle type deposition device according to claim 7, wherein the suction nozzle part is provided in the form of a cylinder or a plurality of nozzles surrounding the outer frame part of the heat shielding member. 根據請求項1所述的噴嘴型沉積裝置,還包括: 一吸入部,用以吸入從所述第一噴嘴及所述第二噴嘴吐出/噴出的原料及氣體中用於沉積圖案後的剩餘原料及氣體。 The nozzle type deposition device according to claim 1, further comprising: A suction part is used to suck in the remaining raw materials and gases after depositing the pattern among the raw materials and gases ejected/discharged from the first nozzle and the second nozzle. 根據請求項9所述的噴嘴型沉積裝置,其中,所述吸入部以形成在所述基板的圖案為中心,在與所述第一噴嘴、所述第二噴嘴及所述吸嘴部相對的位置以曲線形態配置。The nozzle-type deposition apparatus according to claim 9, wherein the suction portion is centered on a pattern formed on the substrate and is located opposite the first nozzle, the second nozzle, and the suction nozzle portion. The positions are arranged in a curved shape. 根據請求項7所述的噴嘴型沉積裝置,其中,所述第一噴嘴、所述第二噴嘴及所述吸嘴部傾斜地安裝在所述基板,在所述吸入部形成二個以上的吸入流路,所述吸入流路用於吸入從所述第一噴嘴及所述第二噴嘴吐出/噴出的原料及氣體中用於沉積圖案後的剩餘原料及氣體,並且所述吸嘴部用於吸入未由所述吸入部吸入的原料及氣體。The nozzle type deposition apparatus according to claim 7, wherein the first nozzle, the second nozzle and the suction nozzle part are installed on the substrate obliquely, and two or more suction flows are formed in the suction part. The suction flow path is used to suck in the remaining raw materials and gases after depositing patterns among the raw materials and gases ejected/ejected from the first nozzle and the second nozzle, and the suction nozzle part is used to suck in Raw materials and gases that are not sucked through the suction part.
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