CN116926496A - Nozzle type deposition apparatus - Google Patents
Nozzle type deposition apparatus Download PDFInfo
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- CN116926496A CN116926496A CN202210604686.XA CN202210604686A CN116926496A CN 116926496 A CN116926496 A CN 116926496A CN 202210604686 A CN202210604686 A CN 202210604686A CN 116926496 A CN116926496 A CN 116926496A
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- type deposition
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- 230000008021 deposition Effects 0.000 title claims abstract description 75
- 239000002994 raw material Substances 0.000 claims abstract description 71
- 238000000151 deposition Methods 0.000 claims description 80
- 239000007789 gas Substances 0.000 claims description 52
- 238000010438 heat treatment Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 23
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000003860 storage Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 230000000694 effects Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000008439 repair process Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present application relates to a nozzle type deposition apparatus, and more particularly, to a nozzle type deposition apparatus which minimizes the amount of raw material used to deposit a pattern by supplying raw material to the pattern deposition as needed, and which can perform accurate pattern deposition by supplying raw material only to a portion where a pattern is to be formed, and which can fundamentally prevent raw material from being deposited to other portions, and which can prevent clogging of a discharge pipe and a nozzle to which raw material is supplied by a heated gas, and which can simply and effectively constitute a deposition apparatus by supplying raw material in a nozzle manner.
Description
Technical Field
The present application relates to a deposition apparatus that discharges a material for patterning a substrate and irradiates the substrate with laser light to deposit the substrate. More specifically, although the circuit patterns for various circuit wirings are formed on the substrate, these circuit patterns have been formed in a large-scale apparatus such as a chemical vapor deposition apparatus (Chemical Vapor Deposition; CVD), the present application relates to a deposition apparatus for forming a fine circuit pattern on a substrate in a normal atmospheric environment.
Background
Thin film patterns are formed on a substrate for driving a flat panel display including an LCD, an OLED, and the thin film patterns are generally deposited using a large-scale apparatus such as CVD. In particular, a fine pattern of a nano-scale or micro-scale unit is generally manufactured by exposure, etching, deposition fixation using a mask.
In flat panel displays including LCDs and OLEDs, wiring circuits for representing the constitution of image light emission and for on/off of pixels are generally deposited on a substrate, but the substrate on which a circuit pattern is formed may have defects such as disconnection/short circuits of a minute circuit due to various reasons, and a repair process for repairing the defects is indispensable. For the repair process, the pattern formed on the substrate needs to be cut or connected. In the process of connecting patterns, it is necessary to deposit a fine pattern, but conventionally, a metal material for forming a pattern is supplied to a certain region including a defect, and a portion where a pattern is to be deposited is irradiated with a laser to perform deposition.
Korean patent No. 10-0739443 discloses a conventional thin film pattern deposition apparatus, which discloses an apparatus for supplying a metal raw material gas in a thin film deposition chamber to form a partial metal raw material atmosphere and irradiating laser light to a position where a pattern is to be formed for deposition. Such a thin film pattern deposition apparatus is not formed in a large-scale chamber, but forms a metal raw material atmosphere in some regions in the atmosphere, thereby having an advantage of effectively performing partial thin film deposition, but must be formed as a metal raw material atmosphere in a certain region, and thus, the use amount of the metal raw material is excessive and additional components such as an air curtain are required in order to form the metal raw material atmosphere, and as the metal raw material is formed in a certain region, the metal raw material is deposited in an unnecessary portion, thereby having a problem of causing another defect in the thin film pattern forming process, and there is a limitation in effectively depositing a fine pattern, and there is a problem that a substrate which is vulnerable to heat such as a flexible substrate may be damaged.
Disclosure of Invention
(technical problem)
In order to solve the above-described problems, the present application provides a nozzle type deposition apparatus which supplies a raw material for depositing a pattern as needed to pattern deposition, and performs deposition so that the amount of the raw material used can be minimized, and according to supplying the raw material only at a portion where a pattern is to be formed, so that accurate pattern deposition can be performed, and diffusion of the raw material can be prevented, and further, deposition of the raw material to other portions can be fundamentally prevented, and clogging of a discharge pipe and a nozzle to which the raw material is supplied can be prevented by a heating gas, and according to supplying the raw material in a nozzle manner, so that the deposition apparatus can be simply and effectively constructed, diffusion of the raw material to other portions through a suction nozzle portion can be prevented, and concentrated supply of the heating gas to a deposition portion can be prevented, and diffusion of the raw material and gas through a suction portion provided at an upper portion of a substrate can be prevented.
(technical proposal)
In order to achieve the above object, a nozzle-type deposition apparatus of the present application is used in a deposition apparatus for depositing a pattern on a substrate, the nozzle-type deposition apparatus comprising: a laser module for irradiating laser to form a pattern on the substrate; a first nozzle for discharging a raw material to be deposited for depositing a pattern on the substrate; a second nozzle formed at an outer frame of the first nozzle, for spraying a gas heated at a predetermined temperature; a nozzle housing that accommodates the first nozzle and the second nozzle therein; a heating unit which is housed in the nozzle housing and heats the first nozzle and the second nozzle; a nozzle part formed at the nozzle housing to suck the raw material which is not deposited after being sprayed from the first nozzle and a part of the gas sprayed from the second nozzle.
The first nozzle is inserted and mounted in the second nozzle, and the gas discharged from the second nozzle is discharged along the outer frame of the first nozzle.
In addition, the first nozzle is provided protruding by a predetermined length from a tip of a second nozzle provided protruding by a predetermined length from a tip of the nozzle housing.
The gas discharged from the second nozzle is discharged along the outer frame of the first nozzle to a predetermined constant region having a wider pattern than that deposited on the substrate.
In addition, the tip of the suction nozzle portion is formed to be located between the tip of the first nozzle and the tip of the second nozzle.
In addition, the nozzle housing is a block formed of a metal material, and the nozzle-type deposition apparatus further includes: and the storage hole is used for storing more than two of the first nozzle, the second nozzle and the heating part.
In addition, a heat shielding member is disposed at a part or the whole of the outer frame portion of the nozzle housing to prevent heat generated from the nozzle housing from being transferred to the outside.
In addition, the suction nozzle portion is provided in the form of a cylinder or a plurality of nozzles surrounding the outer frame portion of the heat shielding member.
In addition, the nozzle type deposition apparatus further includes: and a suction unit for sucking in the remaining raw materials and gases after the deposition of the pattern, the raw materials and gases being discharged/ejected from the first nozzle and the second nozzle.
The suction portion is disposed in a curved shape at a position facing the first nozzle, the second nozzle, and the suction nozzle portion with respect to a pattern formed on the substrate as a center.
The first nozzle, the second nozzle, and the suction nozzle portion are mounted on the substrate so as to be inclined, and two or more suction passages for sucking the remaining material and gas after the deposition of the pattern, which are discharged/ejected from the first nozzle and the second nozzle, are formed in the suction portion, and the suction nozzle portion is for sucking the material and gas not sucked by the suction portion.
(effects of the application)
The present application constructed as described above can minimize the amount of raw material used and has an effect that the waste of raw material can be minimized according to the raw material required for deposition being supplied in the form of a nozzle.
In addition, by supplying the raw material to a portion required for pattern deposition through the nozzle, a fine pattern can be accurately and precisely formed.
In addition, the heating gas is supplied not only to the outer frame portion of the nozzle to which the raw material is supplied but also to a certain region where deposition is formed, so that clogging of the nozzle and deposition of the raw material at unnecessary portions can be fundamentally prevented.
In addition, the deposition apparatus in the form of a nozzle can be miniaturized, and thus the operation and installation of the deposition apparatus are convenient, and maintenance can be effectively performed.
In addition, the diffusion of the heating gas and the source material through the suction part is prevented at the upper part, and the source material remaining after deposition is recovered through the suction part in the vicinity of the substrate, so that the fineness of pattern deposition can be improved.
Drawings
Fig. 1 is a perspective view illustrating a nozzle-type deposition apparatus according to an embodiment of the present application.
Fig. 2 is an enlarged perspective view showing a first nozzle, a second nozzle, and a nozzle part in a nozzle-type deposition decoration according to an embodiment of the present application.
Fig. 3 is a view showing patterning by the nozzle-type deposition apparatus of the present application.
Fig. 4 is a perspective view illustrating a suction part of a nozzle-type deposition apparatus according to an embodiment of the present application.
Fig. 5 is a diagram illustrating a suction part including a nozzle-type deposition apparatus to form pattern deposition according to an embodiment of the present application.
(description of the reference numerals)
100: laser module
200: first nozzle
300: second nozzle
400: nozzle casing
500: heating part
600: suction part
700: nozzle part
Detailed Description
The nozzle-type deposition apparatus of the present application will be described in detail below with reference to the accompanying drawings.
Fig. 1 is a perspective view illustrating a nozzle-type deposition apparatus according to an embodiment of the present application, fig. 2 is an enlarged perspective view illustrating a first nozzle, a second nozzle, and a nozzle part in a nozzle-type deposition decoration according to an embodiment of the present application, fig. 3 is a view illustrating patterning by the nozzle-type deposition apparatus of the present application, fig. 4 is a perspective view illustrating a suction part of the nozzle-type deposition apparatus according to an embodiment of the present application, and fig. 5 is a view illustrating a suction part including the nozzle-type deposition apparatus according to an embodiment of the present application, forming patterned deposition.
The process of depositing a pattern, particularly a fine pattern, is formed in a large-scale apparatus such as CVD, and has a thin film deposition chamber device for depositing a thin film in the atmosphere in the past, but has a simple constitution as compared with the existing CVD apparatus, but requires forming a partial metal raw material atmosphere, and the remaining metal raw material is thrown away except for a small amount of metal raw material for pattern deposition, so there is a serious problem of wasting the metal raw material. In addition, since an additional structure for blocking the atmosphere is required to form a partial metal raw material atmosphere, there is a problem in that the structure is complicated.
The nozzle-type deposition apparatus of the present application includes: a laser module 100 for irradiating a laser beam for heating and performing deposition to a raw material 30 to be deposited on a substrate 10 to be patterned; a first nozzle 200 that discharges a raw material 30 as a raw material for depositing a pattern on the substrate 10 in a nozzle form; a second nozzle 300 which prevents nozzle clogging which may occur due to hardening of the raw material 30 moving toward the first nozzle 200 and which sprays a heating gas 40 heated at a predetermined temperature formed at an outer frame portion of the first nozzle 200 in order to isolate a certain region including a portion of the deposition pattern from the outside; a nozzle housing 400 that houses the first nozzle 200 and the second nozzle 300 therein; a heating unit 500 that is housed in the nozzle housing 400 and heats the first nozzle 200 and the second nozzle 300; and a suction nozzle part 700 formed in the nozzle housing, for sucking in the raw material and gas which are not deposited after being ejected from the first nozzle 200 and the second nozzle.
The laser module 100 of the present application is configured to deposit a material 30 by supplying a laser beam for heating and hardening the material 30 from a first nozzle 200 to the material 30 discharged from a position where the substrate 10 is to be deposited. The material 30 is different depending on the pattern to be formed on the substrate, and for example, when tungsten (W) is used, laser light is irradiated in accordance with the pattern. Therefore, it is necessary to select a laser module 100 capable of supplying an appropriate laser light according to the wavelength, output, pulse width, and other materials of the raw material 30. After selecting the laser module 100 for supplying an appropriate laser beam according to the material of the raw material 30, the path of the laser beam may be changed by an optical module (not shown) for irradiating the laser beam to the position where the pattern is deposited on the substrate 10. Of course, the path of the laser light may be changed by the optical module, and if the size of the substrate 10 is small, the substrate 10 may be moved.
The first nozzle 200 of the present application is configured to discharge the raw material 30 to a position where the substrate 10 is to be deposited. The raw material 30 to be discharged through the first nozzle 200 is obtained by gasifying solid metal or transforming it into a powder form, for example, by a bubbler (not shown), and is received by a raw material connection portion 210 at the rear end of the first nozzle 200. The gas or powdered raw material converted by the bubbler is transferred to the first nozzle 200 through the discharge pipe passage, and the raw material 300 discharged to the substrate through the discharge pipe passage and the first nozzle 200 varies depending on the material, but has a characteristic of hardening when the temperature is lowered to a certain temperature or lower. That is, it is important to maintain a constant temperature or higher in order to prevent clogging of the drain flow path and the first nozzle 200. The material of the first nozzle 200 may be different depending on the discharged raw material 30, but in order to facilitate maintenance at a certain temperature or higher, a metal material having high thermal conductivity and high durability is preferably used. Of course, in order to prevent hardening of the raw material 30, a material having a small surface roughness is preferably used. In addition, the diameter of the nozzle varies depending on the width of the deposited pattern, but it is advantageous to make it fine. However, since the smaller the diameter of the nozzle, the smaller the amount of the raw material 30 to be solidified, the nozzle is clogged, and therefore, it is preferable to determine the pattern width, the material of the raw material 30 to be discharged, and the like.
The second nozzle 300 of the present application is configured to be disposed in the outer frame of the first nozzle 200 and to spray the heating gas 40 heated at a predetermined temperature according to the outer frame of the first nozzle 200. The heating gas 40 is supplied through the heating gas connection part 310 at the rear end of the nozzle housing 400. As described above, when the first nozzle 200 is configured to pass through the raw material 30 in the form of a gasified or powder and the temperature is lower than a certain temperature, the raw material 30 is cured, and the nozzle is blocked. The second nozzle 300 is configured to prevent clogging of the nozzles, and to spray the heating gas 40 heated at a predetermined temperature to the outer frame portion of the first nozzle 200, thereby maintaining the first nozzle 200 at a temperature equal to or higher than the temperature at which the raw material 30 is not hardened. In addition, the heating gas 40 is sprayed to a predetermined region 50 including a portion of the pattern 20 deposited on the substrate 10, so that a local blocking effect may be additionally obtained. For example, as shown in fig. 1 and 2, the first nozzle 200 is inserted and mounted inside the second nozzle 300, and the heating gas 40 supplied to the second nozzle 300 heats the first nozzle 200 as a whole, so that the second nozzle 300 as described above can fundamentally prevent the nozzle clogging caused by the hardening of the raw material 30. Of course, the same effect can be obtained by disposing a plurality of second nozzles 300 in the outer frame portion of the first nozzle 200, but the effect is reduced compared to the insertion of the first nozzle 200 into the interior. As shown in fig. 3, the heated gas 40 injected from the second nozzle 300 reaches the substrate 100 along the outer frame of the first nozzle 200, so that the pattern is deposited and the remaining raw material 30 is cured at a position other than the pattern, thereby fundamentally preventing occurrence of a defect. In addition, the atmosphere of the raw material 30 forming part at the time of depositing the pattern is powerful, and thus, can have an effect of blocking from the outside. The heating gas 40 sprayed through the second nozzle 300 prevents reaction with the raw material 30 while maximizing blocking effect with the outside, and preferably, an inert gas is used. In addition, it is preferable to use an inert gas argon (Ar) having a large molecular weight to prevent the temperature of the heating gas 40 from being drastically reduced and to improve the blocking effect with the outside.
The nozzle housing 400 of the present application is a body forming the nozzle-type deposition apparatus of the present application, and accommodates the first nozzle 200, the second nozzle 300, and a heating unit 500 described later. The nozzle housing 400 is required to house therein the first nozzle 200 up to the heating portion 500, and thus, it is naturally required to include a tool for fixing the first nozzle 200, the second nozzle 300, and the heating portion 500. After the nozzle housing 400 is formed in a block shape, the receiving holes 410 for receiving the first and second nozzles 200 and 300 and the heating unit 500 are provided, so that heat generated from the heating unit 500 can be completely transferred to the first and second nozzles 200 and 300. In addition, no additional tool for fixing is required, and only one nozzle housing 400 is required to be fixed to the apparatus, thus having advantages of easy installation and maintenance. However, since the heat generated from the heating portion 500 is transferred to the entire body of the nozzle housing 400, it is preferable that the heat shielding member 420 is disposed outside the nozzle housing 400 so that the heat is not transferred to the apparatus.
The heating unit 500 of the present application is configured to heat the first nozzle 200 and the second nozzle 300 to a predetermined temperature or higher. Even if the heating gas 40 heated to a certain temperature or higher is supplied from the second nozzle 300, the second nozzle 300 has its own length, and the heating gas 40 needs to be maintained at a certain temperature or higher until reaching the substrate 10, and therefore, the heating part 500 is required to maintain the temperature of the heating gas 40. In addition, it is preferable that the heating part 500 is not installed at only one side, but is installed symmetrically centering on the second nozzle 300. However, the installation of a plurality of heating elements can maximize the heating effect, but the manufacturing cost becomes high, and thus, it is preferable to select according to the environment in which the nozzle-type deposition apparatus of the present application is installed, in accordance with accurate temperature adjustment and manufacturing cost.
The nozzle part 700 of the present application is formed at the outside of the nozzle housing 400 for sucking a portion 60 of the raw material not deposited after being sprayed from the first nozzle 200 and the gas sprayed from the second nozzle 300. The nozzle-type deposition apparatus of the present application is of a chamber-free structure, which is blocked from the outside in a certain region including the portion of the deposition pattern by the heating gas 40 injected from the second nozzle 200, however, there is a disadvantage in that the undeposited source material and the heating gas 40 are diffused to the outside. If the undeposited source material leaves the area of the heated gas 40, it is deposited on other parts of the substrate, resulting in short circuits or open circuits, which results in a problem of reduced repair success rate. For this reason, the tip of the suction nozzle part 700 is disposed between the tips of the first nozzle 200 and the second nozzle 300 to prevent the laser light irradiated from the laser module 100 from interfering with the source material sprayed from the first nozzle 200, while preventing the source material and the heating gas 40 from being diffused to the outside. In order that the heating gas 40 can reach a certain region of the substrate 10, the efficiency of the repair process can be maximized by surrounding the certain region with the heating gas (40) while preventing the heating gas 40 from diffusing to the outside by making the injection pressure of the heating gas 40 greater than the suction force of the suction nozzle part 700. Further, the nozzle portion 700 is preferably provided in a cylindrical shape, but may be provided in a form in which a plurality of nozzles are symmetrically arranged to the outer frame of the nozzle housing 100. In the case of a multiple nozzle arrangement, it may happen that some nozzles may not be sucked up, but this has the advantage of being able to operate according to the situation of the repair process by making adjustments of the suction force of the individual nozzles. In addition, the suction part 600 described below mainly sucks the raw material and the heating gas 40 in a portion near the substrate, and sucks the source material and the heating gas 40 through the suction part 700 of the present application in an upper portion of the positions of the first nozzle 200 and the second nozzle 300, so that the source material and the like can be completely prevented from leaking to the outside.
The suction portion 600 of the present application is configured to absorb the raw material 30 discharged from the first nozzle 200 for depositing the surplus raw material 30 of the pattern and the heating gas 40 injected into the second nozzle 300, and to discharge the heated gas to the outside. As an example shown in fig. 4, the suction part 600 is preferably arranged in a form of an outer frame part surrounding the second nozzle 300. In order to efficiently suck the sucked raw material 30 and the heated gas 40, a plurality of suction channels 610 are preferably formed. In addition, laser light is irradiated for deposition of the pattern 20, and therefore, it is preferable that the first nozzle 200 is obliquely installed behind the substrate for precise deposition to irradiate laser light perpendicular to the substrate. Accordingly, the suction flow path 610 is formed to be inclined corresponding to the inclined first nozzle 200, and thus has an effect that it is not scattered to the outside and can be effectively sucked. Further, as shown in fig. 5, after the nozzle housing 400 is mounted obliquely, the suction part 600 is mounted on the opposite surface, so that the raw material 30 and the heating gas 40 can be sucked more effectively.
Claims (11)
1. A nozzle-type deposition apparatus for use in a deposition apparatus for depositing a pattern on a substrate, the nozzle-type deposition apparatus comprising:
a laser module for irradiating laser to form a pattern on the substrate;
a first nozzle for discharging a raw material to be deposited for depositing a pattern on the substrate;
a second nozzle formed at an outer frame of the first nozzle, for spraying a gas heated at a predetermined temperature;
a nozzle housing that accommodates the first nozzle and the second nozzle therein;
a heating unit which is housed in the nozzle housing and heats the first nozzle and the second nozzle; and
a nozzle part formed at the nozzle housing to suck the raw material which is not deposited after being sprayed from the first nozzle and a part of the gas sprayed from the second nozzle.
2. The nozzle type deposition apparatus of claim 1, wherein the first nozzle is inserted and installed inside a second nozzle, and the gas ejected from the second nozzle is ejected along an outer frame portion of the first nozzle.
3. The nozzle-type deposition apparatus of claim 2, wherein the first nozzle is protrusively disposed by a predetermined length from a tip of the second nozzle, and the second nozzle is protrusively disposed by a predetermined length from a tip of the nozzle housing.
4. The nozzle-type deposition apparatus according to claim 2, wherein the gas ejected through the second nozzle is ejected along the outer frame portion of the first nozzle to a predetermined fixed area wider than the pattern deposited on the substrate.
5. The nozzle-type deposition apparatus of claim 1, wherein a tip of the nozzle part is formed to be located between a tip of the first nozzle and a tip of the second nozzle.
6. The nozzle-type deposition apparatus of claim 1, wherein the nozzle housing is a block formed of a metal material,
the nozzle-type deposition apparatus further includes:
and the storage hole is used for storing more than two of the first nozzle, the second nozzle and the heating part.
7. The nozzle-type deposition apparatus of claim 6, wherein a heat shielding member for preventing heat generated from the nozzle housing from being transferred to the outside is disposed at a part or all of an outer frame portion of the nozzle housing.
8. The nozzle-type deposition apparatus according to claim 7, wherein the nozzle portion is provided in the form of a cylinder or a plurality of nozzles surrounding an outer frame portion of the heat shielding member.
9. The nozzle-type deposition apparatus of claim 1, further comprising
And a suction unit for sucking in the remaining raw materials and gases after the deposition of the pattern, the raw materials and gases being discharged/ejected from the first nozzle and the second nozzle.
10. The nozzle-type deposition apparatus according to claim 9, wherein the suction portion is arranged in a curved shape at a position facing the first nozzle, the second nozzle, and the suction nozzle portion with respect to a pattern formed on the substrate as a center.
11. The nozzle-type deposition apparatus of claim 7, wherein the first nozzle, the second nozzle, and the nozzle portion are obliquely installed at the substrate,
and a suction nozzle portion for sucking the remaining material and gas after the deposition of the pattern, and sucking the material and gas not sucked by the suction portion.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020220040831A KR20230141358A (en) | 2022-03-31 | 2022-03-31 | Nozzle type deposition apparatus |
| KR10-2022-0040831 | 2022-03-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116926496A true CN116926496A (en) | 2023-10-24 |
Family
ID=88292334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210604686.XA Pending CN116926496A (en) | 2022-03-31 | 2022-05-30 | Nozzle type deposition apparatus |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20230141358A (en) |
| CN (1) | CN116926496A (en) |
| TW (1) | TWI833232B (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8663754B2 (en) * | 2009-03-09 | 2014-03-04 | Imra America, Inc. | Pulsed laser micro-deposition pattern formation |
| US20160362782A1 (en) * | 2015-06-15 | 2016-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas dispenser and deposition apparatus using the same |
-
2022
- 2022-03-31 KR KR1020220040831A patent/KR20230141358A/en not_active Application Discontinuation
- 2022-05-30 CN CN202210604686.XA patent/CN116926496A/en active Pending
- 2022-05-30 TW TW111120136A patent/TWI833232B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI833232B (en) | 2024-02-21 |
| TW202340514A (en) | 2023-10-16 |
| KR20230141358A (en) | 2023-10-10 |
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