KR20080078310A - Gas injection apparatus and substrate processing apparatus having the same - Google Patents

Abstract

A gas injection apparatus and a substrate processing apparatus having the same are provided to prevent a gas from being resolved before the gas reaches a substrate by installing a cooling unit at a gas injection unit. A gas injection apparatus comprises a plurality of gas injection units(210,220), a number of gas supply units(230,240), and a cooling unit(400). Gases with different resolution temperatures are injected through the gas injection units. The gas supply units are connected with the gas injection units and supply different gases to the gas injection units. The cooling unit is installed at the gas injection unit which injects gas with lower resolution temperature.

Description

GAS INJECTION APPARATUS AND SUBSTRATE PROCESSING APPARATUS HAVING THE SAME

1 is a schematic cross-sectional view showing a substrate processing apparatus of a CVD method including a gas injection apparatus according to a first embodiment of the present invention.

2 is a plan view showing a gas injection apparatus according to a first embodiment of the present invention.

3 is a perspective view illustrating a gas injection unit of the gas injection device according to the first embodiment of the present invention.

4 and 5 are plan views showing a modification of the gas injection apparatus according to the first embodiment of the present invention.

6 is a schematic cross-sectional view showing a substrate processing apparatus of the CVD method including the gas injection apparatus according to the second embodiment of the present invention.

7 is a plan view showing a gas injection apparatus according to a second embodiment of the present invention.

8 is a cross-sectional view showing a modification of the gas injection device according to the second embodiment of the present invention.

               <Description of the code | symbol about the principal part of drawings>

100: chamber 200: gas injection device

210: low temperature gas injection unit 220: high temperature gas injection unit

230, 240: gas supply unit 300: substrate support

400: cooling means 500: drive member

600: heating means 700: rotation axis

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, and more particularly, to a gas injection apparatus for effectively decomposing and injecting gases having different decomposition temperatures from each other onto a substrate, and a substrate processing apparatus having the same.

A semiconductor device or a flat panel display (FPD) forms a thin film on a semiconductor wafer or glass substrate (hereinafter referred to as a "substrate"), and partially photographs, ion diffuses, etches, and deposits the thin film. It can manufacture by repeating a process.

The thin film deposition process in the semiconductor manufacturing process refers to a process of depositing a desired film on a substrate to a desired thickness, and the deposition method includes a physical vapor deposition (PVD) method and a chemical vapor deposition (CVD) method. .

The physical vapor deposition method refers to depositing the vapor phase of the raw material on the surface of the substrate in a state in which no chemical reaction occurs under high vacuum conditions, and the physical vapor deposition method includes sputtering, laser ablation, and pulsed laser. deposition method, evaporation method and the like are used.

In addition, the chemical vapor deposition method refers to a process in which a solid phase formed by a chemical reaction under vacuum conditions is condensed on the surface of a substrate to form a coating layer, and such chemical vapor deposition method is a low pressure chemical vapor deposition (Low pressure CVD) method and an atmospheric pressure chemical vapor deposition. Atmospheric pressure, plasma enhanced CVD, metal organic vapor deposition (MOCVD), and the like are used.

In this case, the physical vapor deposition method is simple compared to the chemical vapor deposition method, but the mechanical principle is difficult to form a uniform thin film on the stepped substrate, the high vacuum environment is necessary because the high price of equipment is disadvantageous In contrast, the organic metal chemical vapor deposition method of the chemical vapor deposition method is capable of low temperature process, and has the advantage of controlling the composition and deposition rate of the thin film by controlling the amount of the introduction material and the amount of transport gas. In addition, the organometallic chemical vapor deposition method has a high uniformity (uniformity) and excellent step coverage (step coverage) to obtain a thin film, and has the advantage of not damaging the surface of the substrate.

In order to perform the chemical vapor deposition process, a conventional substrate processing apparatus injects a predetermined gas of different types into a gas injection apparatus provided in an upper portion of a chamber to inject the gas onto a substrate to process the substrate, or a mixed gas The substrate is treated by injecting the mixed gas into the substrate.

Here, the gas injector is provided with a heater for increasing the temperature of the gas injected into the gas injector, the gas heated by the heater is easily decomposed in the chamber to lower the deposition temperature on the substrate and the quality Thin film can be obtained.

However, when using different kinds of predetermined gases, in particular, gases having different decomposition temperatures, the heater is heated based on a gas having a relatively high decomposition temperature, whereby a source having a relatively low decomposition temperature is used as a chamber. It is disintegrated at the same time as it is injected into the inside. In other words, when a source having a relatively high decomposition temperature and a low source are injected into the chamber, the gas having a high decomposition temperature and a low gas do not react on the substrate but react in advance in the upper reaction space, thereby generating particles. It is difficult to obtain a high quality thin film by damaging the substrate.

In addition, the use of gases with different decomposition temperatures requires much larger amounts of gas than the ideal reactant gases to deposit thin films of desired thickness. This reduces the efficiency of the amount of gas used.

In order to solve the above problems, an object of the present invention is to provide a gas injection device for effectively decomposing and injecting two or more gases having different decomposition temperatures from each other, and a substrate processing device having the same.

In addition, an object of the present invention is to provide a gas injection device for increasing the efficiency of two or more gases having different decomposition temperatures from each other and a substrate processing device having the same.

In addition, an object of the present invention is to provide a gas injection device for forming a uniform thin film while lowering the temperature of the substrate to a minimum, and a substrate processing apparatus having the same.

In order to achieve the above object, the gas injector of the present invention includes a plurality of gas injectors for injecting gases having different decomposition temperatures, and a plurality of gas supply units connected to the gas injectors to supply different gases. And a cooling means is formed in the gas injection part which injects the gas with low decomposition temperature.

The gas injector for injecting the gas having a low decomposition temperature and the gas injector for injecting the gas having a high decomposition temperature may be spaced apart from each other by a predetermined interval.

The cooling means is characterized in that a cooling passage is formed in the gas injection portion, a cooling medium is supplied to the cooling passage.

The cooling passage has a curved line in the gas injection unit, characterized in that it further comprises a cooling water inlet and outlet connected to the cooling passage.

The gas injection unit for injecting a gas having a high decomposition temperature is characterized in that the heating means is formed.

The heating means is characterized in that a flow path is formed in the gas injection portion, the heating medium is supplied to the flow path.

It is characterized in that it further comprises a rotating shaft for rotating the entire gas injection unit.

It is characterized in that it further comprises a rotating member capable of rotating the respective gas injection unit.

The gas injection unit in which the gas having a low decomposition temperature is injected and the gas injection unit in which the gas having a high decomposition temperature is injected are arranged so as to cross each other so that the gas is injected toward the substrate without overlapping each other.

A heat shielding member is provided on a rear surface of the gas injector to which gas having a high decomposition temperature is injected.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention, and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. Like reference numerals in the drawings refer to like elements.

1 is a schematic cross-sectional view showing a substrate processing apparatus of the CVD method with a gas injection apparatus according to a first embodiment of the present invention, Figure 2 is a plan view showing a gas injection apparatus according to a first embodiment of the present invention, 3 is a perspective view illustrating a gas injection unit of the gas injection device according to the first embodiment of the present invention, and FIGS. 4 and 5 are plan views illustrating modified examples of the gas injection device according to the first embodiment of the present invention.

Referring to FIG. 1, a substrate processing apparatus according to the present invention includes a chamber 100, a gas injection apparatus 200 provided on an upper portion of the chamber 100 to inject a process gas into the chamber 100, and the chamber. It is provided in the lower part in the 100, the substrate support 300 for seating the substrate (G). At this time, although not shown, a gate (not shown) may be formed on the sidewall of the chamber 100 to draw and withdraw the substrate G, and a gas in the chamber 100 may be formed on the lower surface of the chamber 100. An exhaust device (not shown) for exhausting the gas may be provided.

The chamber 100 is made of stainless steel, and includes a lower chamber 100a and chamber leads Lid 100b covering an upper portion of the lower chamber 100a. The lower chamber 100a may be formed in a cylindrical shape with an open upper portion, and its shape may be changed according to the shape of the semiconductor wafer or the glass substrate. In addition, the chamber lid 100b serves to close the upper portion of the lower chamber 100a and is hermetically connected to the upper portion of the lower chamber 100a to form a predetermined space in the chamber 100. Here, an O-ring (not shown) may be further provided for hermetic connection between the lower chamber 100a and the chamber lid 100b. Although the lower chamber 100a and the chamber lid 100b are illustrated as being separated from each other, the upper and lower parts may be sealed and may be formed as one chamber having a predetermined space therein.

The gas injector 200 includes a plurality of gas injectors 210 and 220, and a gas supply unit supplying gas to the gas injectors 210 and 220 to the plurality of gas injectors 210 and 220. 230 and 240 are connected, and some of the gas injection parts 210 and 220 are provided with a cooling means 400. In this case, the gas supply units 230 and 240 may be connected to gas sources, not shown, respectively. Here, the plurality of gas injection parts 210 and 220 are manufactured by an injector method, and are attached to the lower part of the chamber lid 100b. Of course, a separate support member (not shown) may be provided and attached to the lower portion of the chamber lid 100b.

That is, some of the plurality of gas injectors 210 and 220 are low temperature gas injectors 210 to which gas having a low decomposition temperature is supplied, and others are high temperature gas injectors to which gas having a high decomposition temperature is supplied ( 220). In addition, the low temperature gas injection unit 210 is provided with a cooling means 400 for cooling a gas having a low decomposition temperature, the cooling means 400 is a gas injected into the low temperature gas injection unit 210 It serves to cool. The gas injection device 200 provided with the cooling means 400 will be described in detail later with reference to the drawings.

The substrate support 300 is formed in the same shape as the shape of the substrate G, and a driving member 500 for raising or lowering or rotating the substrate support 300 is connected to a lower portion of the substrate support 300. . Here, one substrate may be mounted on the substrate support 300, and a plurality of substrates may be simultaneously mounted. In addition, the driving member 500 for elevating and rotating the substrate support 300 is one drive member is configured to raise and lower the substrate support, but may be separated to drive the elevating or rotating separately. Of course it can.

In addition, the substrate support 300 may be provided with a heating means (not shown) for heating the substrate support 300 to a predetermined temperature. That is, the heating means applies heat to the substrate G seated on the substrate support 300 to provide a predetermined temperature for deposition. Here, a resistance heating heater may be provided inside the substrate support 300 as the heating means, and a separate lamp heater may be connected to the substrate support 300 at a lower portion thereof to heat the substrate support 300.

The gate (not shown) may be formed at one side of the chamber 100, and serves to lead and withdraw the substrate G into the chamber 100. In this case, the gate may be formed on the other side facing one side of the chamber 100. In addition, the exhaust device (not shown) is provided below the chamber 100 and serves to exhaust reaction by-products and gases generated during deposition to the outside of the chamber 100. At this time, the exhaust device may be formed on the side wall of the chamber 100 in addition to the lower portion of the chamber 100, it may be formed of a plurality.

On the other hand, as shown in Figures 2 and 3, the gas injection device 200 according to the present invention is a low-temperature gas injection unit 210 is injected with a low decomposition temperature gas, the high decomposition temperature gas injection And a gas supply unit 230 and 240 for supplying a process gas to the gas injector 210 and 220. The low temperature gas injector 210 includes cooling means ( 400). Here, the low temperature gas injector 210 and the high temperature gas injector 220 are formed radially around the center, and the low temperature gas injector 210 and the high temperature gas injector 220 are Are arranged to intersect.

Here, as shown in FIG. 3, the low-temperature gas injection unit 210 includes an elliptic body 212 having a predetermined thickness and a predetermined space 214 formed in the body 212. The cooling passage 410 formed in the 212, and the cooling passage 410 includes a cooling water supply unit 422 and a cooling water discharge unit 424 for supplying a cooling medium, for example, cooling water. At this time, a solvent having a low temperature other than the cooling water may be used as the cooling medium.

That is, a predetermined space 214 having a groove shape is formed at the center of the body 212, and an injection hole 216 for injecting gas injected into the predetermined space 214 below the predetermined space 214. ) Is formed. In addition, a cooling passage 410 is formed on the outer circumferential surface of the predetermined space 214 so as to form an open curve to cool the gas injected into the predetermined space 214, and at one side and the other side of the cooling passage 410. The cooling water supply part 422 and the cooling water discharge part 424 are connected. In this case, an O-ring (not shown) may be further provided on the outer circumferential surface of the predetermined space 214 so that the gas injected into the predetermined space 214 does not leak to the outside.

Therefore, when a gas having a low decomposition temperature is introduced into the low temperature gas injection unit 210, the decomposition temperature is introduced by the cooling water flowing from the cooling water supply unit 422 and flowing to the cooling water discharge unit 424 through the cooling channel 410. The lower gas is cooled, whereby the cooled gas can be prevented from being injected into the chamber 100 and decomposed before reaching the substrate G.

Hereinafter, the operation of the substrate processing apparatus equipped with the gas injection apparatus according to the first embodiment of the present invention will be described with reference to FIGS. 1 to 3.

First, when one or a plurality of substrates G are seated on the substrate support 300 in the chamber 100, a gas having a low decomposition temperature and a gas having a high decomposition temperature are respectively supplied from the gas supply units 230 and 240. 210 is injected into the high temperature gas supply unit 220. Here, the cooling water flows in advance in the cooling passage 410 formed in the body 212 of the low temperature gas supply unit 210, whereby a gas having a low decomposition temperature injected into the low temperature gas supply unit 210 is predetermined. Cooled to temperature.

Thereafter, gases having different decomposition temperatures are injected from the low temperature gas supply unit 210 and the high temperature gas supply unit 220 toward the substrate G, and the injected gas is thermally decomposed by the heat applied to the substrate G. And thereby a uniform thin film is formed on the substrate (G). At this time, since the gas having a low decomposition temperature is cooled from the low-temperature gas supply unit 210, it is not decomposed or lost while being sprayed toward the substrate G, thereby obtaining a uniform high quality thin film.

In addition, the gas injection device 200 may be configured, as shown in FIG. In other words. The high temperature gas injector 220 has a structure similar to that of the low temperature gas injector 210, and includes a heating means 600 instead of the cooling means 400, thereby cooling medium such as cooling water. Instead, a heating medium such as a solution having a high temperature is allowed to flow through the hot gas injector 220, thereby applying heat to a gas having a high decomposition temperature, so that the gas injected from the hot gas injector 220 is low. It can be easily disassembled. This has the effect of lowering the temperature of the heat applied to the substrate support 300 to lower the deposition temperature of the thin film on the substrate (G).

Although the gas injection device 200 is formed to inject gas in a fixed state, it may be configured as shown in FIG. 5.

That is, as shown in FIG. 5, the gas injector 200 includes a low temperature gas injector 210 having a cooling means 400 and a high temperature gas injector 220 in which a heating means 600 is formed. Are arranged radially intersecting about the rotary shaft 700, the rotary shaft 700 rotates the low-temperature gas injection unit 210 and the high-temperature gas injection unit 220. Therefore, the low temperature gas injection unit 210 and the high temperature gas injection unit 220 may rotate the gas while simultaneously rotating.

Therefore, by uniformly distributing the gas having a low decomposition temperature and the gas having a high decomposition temperature in the chamber 100, there is an advantage in that a uniform thin film can be formed on the substrate G.

6 is a schematic cross-sectional view showing a substrate processing apparatus of the CVD method with a gas injection apparatus according to a second embodiment of the present invention, Figure 7 is a plan view showing a gas injection apparatus according to a second embodiment of the present invention, 8 is a cross-sectional view showing a modification of the gas injection device according to the second embodiment of the present invention.

6 and 7, a substrate processing apparatus including a gas ejection apparatus according to a second embodiment of the present invention may include a chamber 100, a gas ejection apparatus 200 provided in an upper portion of the chamber 100, and a gas ejection apparatus 200. It includes a substrate support 300 provided in the lower portion of the chamber 100. Here, since the structure of the substrate processing apparatus according to the second embodiment is the same as that of the first embodiment except for the gas injection apparatus 200, redundant description thereof will be omitted.

The gas injector 200 includes a low temperature gas injector 210 having a cooling means 400 and a high temperature gas injector 220 provided to be spaced apart from the low temperature gas injector 210 by a predetermined interval. Include.

The low temperature gas injection unit 210 is arranged in a plurality of radially around the central axis, the low temperature gas injection unit 210, a predetermined space is formed in the body, as in the low temperature gas injection unit of the first embodiment The gas supply unit 230 into which the gas having a low decomposition temperature is injected into the predetermined space is connected. Further, an injection hole is formed in the lower portion of the predetermined space to inject the gas injected into the predetermined space toward the substrate G. In addition, a cooling flow path is formed along the outer circumferential surface of the predetermined space, and a cooling water supply part 422 and a cooling water discharge port 424 are provided in the cooling flow path.

The high temperature gas injector 220 is formed to be spaced apart from the low temperature gas injector 210 by a predetermined interval up and down, and a plurality of feed shafts 250 and radially arranged around the feed shafts 250 are provided. The injection unit 260 is made of. Here, the transfer shaft 250 is connected to the upper portion of the chamber 100 through the center of the low-temperature gas injection unit 210, the lifting and lowering the plurality of injection unit 260 connected to the transfer shaft 250 And rotate.

Here, since the high temperature gas injection unit 220 is formed at a close distance to the substrate G, the hot gas injection unit 220 absorbs a part of the heat generated from the substrate support 300, thereby increasing the temperature of the high temperature gas injection unit 220. By increasing the temperature of the gas introduced into the high temperature gas injection unit 220, the gas is injected toward the substrate G, from which the gas can be easily decomposed at a low temperature. It is possible to obtain a high quality thin film while lowering the deposition temperature of the thin film. In addition, the high temperature gas injection unit 220 has the effect of simplifying the configuration by removing the heating means used in the first embodiment of the present invention.

In addition, since the high temperature gas injector 220 is capable of raising and lowering, the height at which decomposition gases injected from the low temperature gas injector 210 and the high temperature gas injector 220 are different may be adjusted. As a result, a better thin film can be formed.

The hot gas injection unit 220 may be configured as shown in FIG. 8. That is, the heat blocking member 270 made of a material such as aluminum may be mounted to prevent the heat from flowing upward from the rear surface of the injection unit 260. That is, the heat blocking member 270 is formed to be slightly larger than the size of the spray unit 260, and is mounted on the rear surface of the spray unit 260. Therefore, by preventing the heat generated from the substrate support 300 to proceed to the upper portion, thereby keeping the heat around the injection portion 260, the hot gas consisting of the plurality of injection portion 260 There is an effect that can increase the temperature of the injection unit 220.

Thus, by providing the cooling means 400 in the low temperature gas injection unit 210 as described above, and configured to apply heat to the high temperature gas injection unit 220, by using two or more gases having different decomposition temperatures from each other When the thin film is deposited, the gas having a low decomposition temperature decomposes before reaching the substrate G, thereby preventing the gas from reacting with the gas having a high decomposition temperature. By minimizing the amount of gas lost before reaching the substrate G, the deposition rate of the thin film is increased to the substrate G, and the gas having a high decomposition temperature supplies sufficient heat, thereby improving gas decomposition efficiency and minimizing gas consumption. It can be effective.

Hereinafter, the operation of the substrate processing apparatus equipped with the gas injection apparatus according to the second embodiment of the present invention will be described with reference to FIGS. 7 and 8.

First, when one or a plurality of substrates G are seated on the substrate support 300 in the chamber 100, a gas having a low decomposition temperature and a gas having a high decomposition temperature are respectively supplied from the gas supply units 230 and 240. 210 is injected into the high temperature gas supply unit 220. Here, the cooling medium flows from the cooling water inlet 244 connected to the low temperature gas supply unit 210 and flows in the cooling channel 410 of the low temperature gas supply unit 210 to be injected into the low temperature gas supply unit 210. The gas having a low decomposition temperature is cooled to a predetermined temperature, and the hot gas supply unit 220 is close to the substrate support 300 so as to absorb a portion of the heat generated from the substrate support 300 to supply the hot gas supply unit 220. Is raised to a predetermined temperature.

Thereafter, gases having different decomposition temperatures from the low temperature gas supply unit 210 and the high temperature gas supply unit 220 are injected toward the substrate G, and the injected gas is not lost before reaching the substrate G. Without thermal decomposition by the heat applied to the substrate G, thereby forming a uniform thin film on the substrate G.

In the above, the gas injection apparatus according to the present invention has been divided into the first embodiment and the second embodiment, but the first embodiment and the second embodiment may be used in combination.

In the above, the gas injection apparatus according to the present invention has been described by applying a simple low pressure CVD, but is not limited thereto, and may be applied to various types of CVD, atomic layer deposition (ALD), or etching apparatus.

Although described above with reference to the drawings and embodiments, those skilled in the art that the present invention can be variously modified and changed within the scope without departing from the spirit of the invention described in the claims below. I can understand.

As described above, the gas injector of the present invention and the substrate processing apparatus having the same include a cooling means in the gas injector to which gas having a low decomposition temperature is injected, so that when the gas having a low decomposition temperature is injected toward the substrate, There is an effect that can be prevented from decomposing before reaching the substrate.

In addition, the present invention has the effect of obtaining a high deposition rate of the thin film because it is possible to minimize the loss of gas having a low decomposition temperature.

In addition, the present invention by supplying sufficient heat to the gas injecting portion is injected gas high decomposition temperature, there is an effect that can increase the gas decomposition efficiency and minimize the consumption of gas.

In addition, the present invention has the effect of obtaining a good quality film at a lower temperature than conventional processes.

In addition, the present invention has the effect of preventing contamination of particles and the like during thin film deposition.

Claims (14)

A plurality of gas injectors for injecting gases having different decomposition temperatures, and a plurality of gas supply units connected to the gas injectors to supply different gases, respectively; And a cooling means is formed in the gas injector for injecting the gas having a low decomposition temperature. The gas injector of claim 1, wherein the gas injector for injecting the gas having a low decomposition temperature and the gas injector for injecting the gas having a high decomposition temperature are spaced apart from each other by a predetermined interval. The gas injector according to claim 1 or 2, wherein the cooling means is provided with a cooling flow passage inside the gas injection portion, and a cooling medium is supplied to the cooling flow passage. The gas injection apparatus of claim 3, wherein the cooling flow path further comprises a coolant inlet and an outlet connected to the cooling flow path. The gas injector according to claim 3, wherein a heating means is formed in the gas injector for injecting gas having a high decomposition temperature. The gas injection apparatus according to claim 5, wherein the heating means has a flow path formed inside the gas injection part, and a heating medium is supplied to the flow path. The gas injector of claim 1 or 2, further comprising a rotation shaft capable of rotating the entire gas injector. The gas injector of claim 2, wherein the gas injector into which the gas having a low decomposition temperature is injected and the gas injector into which the gas with a high decomposition temperature is injected are arranged so that the gas is injected toward the substrate without overlapping each other. Spraying device. The gas injection device according to claim 8, wherein a heat shield member is provided on a rear surface of the gas injection unit through which the gas having a high decomposition temperature is injected. A chamber, a gas injector provided in an upper portion of the chamber, and a substrate support provided in a lower portion of the chamber to seat a substrate, The gas injector includes a plurality of gas injectors for injecting gases having different decomposition temperatures, and a plurality of gas supply units connected to the gas injectors for supplying different gases to each other. The substrate processing apparatus characterized by the above-mentioned. The substrate processing apparatus of claim 10, wherein a gas injection unit for injecting a gas having a low decomposition temperature and a gas injection unit for injecting a gas having a high decomposition temperature are spaced apart from each other by a predetermined interval. 12. The substrate processing apparatus of claim 10 or 11, wherein the cooling means is provided with a cooling flow path formed of a curved line inside the gas injection portion, and a cooling medium is supplied to the cooling flow path. The substrate processing apparatus of claim 12, wherein a heat shielding member is provided on a rear surface of the gas injection unit through which the gas having a high decomposition temperature is injected. The substrate processing apparatus according to claim 12, wherein a heating means is formed in the gas injection unit for injecting a gas having a high decomposition temperature.

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