KR101200372B1 - Thin film manufacturing apparatus and thin film deposition method using the same - Google Patents

Abstract

The present invention relates to a thin film manufacturing apparatus, comprising a reaction chamber, a substrate support disposed in the reaction chamber, on which a wafer is seated, gas injection means for injecting a reaction gas activated by a source gas, a purge gas, and a plasma; Provided are a thin film manufacturing apparatus including a gas supply means for supplying a source gas, a purge gas, and a reactive gas to a gas injection means, and a plasma power supply for supplying power for plasma generation, and a thin film deposition method using the same. A gas injection means capable of simultaneously supplying a source gas, a purge gas, and a reaction gas into the reaction chamber is proposed, and a reaction gas activated by plasma can be supplied, thereby improving the reaction rate between the source gas and the reaction gas to improve the deposition rate of the film. Can be improved.

Atomic layer deposition, gas injection means, rotation, plasma, reactive gas, RF power

Description

Thin film manufacturing apparatus and thin film deposition method using the same

1 is a conceptual diagram illustrating a conventional atomic layer deposition technique.

Figure 2a is a cross-sectional view of the thin film manufacturing apparatus according to the present invention.

Figure 2b is a cross-sectional view of the thin film manufacturing apparatus according to the present invention shown by cutting in a direction perpendicular to Figure 2a.

3 is a perspective view of a gas injection means according to an embodiment of the present invention.

Figure 4a is a conceptual perspective view for explaining the coupling between the drive shaft and the third injection unit of the present invention.

4B is a cross-sectional view taken along the line AA ′ of FIG. 4A;

5 is a plan view of a thin film manufacturing apparatus for explaining the atomic layer deposition method according to the present invention.

6a to 6c are conceptual views for explaining the atomic layer deposition method according to the present invention.

<Explanation of symbols for the main parts of the drawings>

10 chamber 20 substrate support

30: substrate 40: housing

50: drive shaft 70: window

80, 220: waveguide 100: gas injection means

200: plasma generator

The present invention relates to a thin film manufacturing apparatus, and more particularly to a thin film manufacturing apparatus that can reduce the atomic layer deposition time by generating a plasma in thin film deposition using atomic layer deposition.

Atomic Layer Deposition (ALD) technology, unlike Chemical Vapor Deposition (CVD) technology, is a method in which mono-reactive materials are reacted by surface reaction during one cycle deposition. A thin film of monolayer or less is grown.

In this atomic layer deposition technique, chemical species (source and reactant gas) constituting the thin film are alternately supplied with time. That is, one species is supplied to the reaction chamber to form an atomic layer composed of one species on the wafer, and then another species is supplied to the reaction chamber to stack the atomic layers.

1 is a conceptual diagram illustrating a conventional atomic layer deposition technique.

Referring to FIG. 1, one cycle for forming a conventional monolayer is first, supplying a source gas to form a source atomic layer on a wafer, blocking supply of the source gas, and then supplying a purge gas. Step 2 to purge the source gas in the chamber, and to stop the supply of the purge gas, and to supply the reaction gas to react with the source atomic layer on the wafer, and to stop the supply of the reaction gas, Four steps are provided to purge the reaction gas in the chamber by supplying the gas.

The thin film deposition by the atomic layer deposition is very easy to control the thickness of the thin film, even if the structure of the lower film is a complex three-dimensional structure can obtain excellent step coverage.

In addition, there is an advantage of lowering the deposition temperature than CVD by using a thermal decomposition reaction of the reaction raw material, and because a self-limited mechanism is used, if a certain amount or more of the reaction raw material is supplied, It is not sensitive and is not greatly influenced by the deposition temperature, making it easy to establish the process conditions.

However, two gas feeds and two purges are required per cycle, and the deposition rate is very slow because the thickness of the deposited film per cycle is about 0.5 to 2 kPa. As such, there are many difficulties in depositing a thin film having a thickness of several hundreds of micrometers or more due to the low deposition rate and the deposition rate.

In order to improve the low deposition rate, which is a disadvantage of the atomic layer deposition method, the deposition rate was increased by generating a plasma in the reaction chamber during the reaction gas supply.

The reactive gas activated by the plasma reacts more easily and quickly with the source gas adsorbed on the substrate surface to form a monolayer.

That is, in the third step of the atomic layer deposition cycle described above, plasma may be generated inside the chamber to shorten the reaction time between the plasmalized reaction gas and the source gas adsorbed on the substrate surface, thereby improving the deposition rate of atomic layer deposition. .

However, the conventional atomic layer deposition method using the plasma has a problem that it is not easy to generate the plasma within a short time that the reaction gas is supplied and to maintain the plasma state stably. To deposit a thin film having a thickness of more than several hundred microseconds, the cycle including the step of generating a plasma must be repeated several hundred times.

Therefore, the present invention can simultaneously react, purge and deposit by simultaneously supplying the reaction gas activated by the source gas, purge gas and plasma in the chamber to solve the above problems, the reaction between the source gas and the reaction gas It relates to a thin film manufacturing apparatus that can shorten the time and improve the deposition rate.

The present invention relates to an apparatus for activating and supplying by at least one or more plasmas of gases supplied into a chamber.

A reaction chamber according to the present invention, a substrate support part installed in the reaction chamber, on which the substrate is seated, and a plurality of gas injectors for respectively injecting a plurality of gases supplied through the upper portion of the reaction chamber independently to the substrate. Provided is a thin film manufacturing apparatus including a gas injection means and a plasma generator connected to at least one of the plurality of gas injection units.

Here, the substrate support portion preferably includes at least one susceptor for mounting the substrate and a rotation shaft for rotating the substrate support portion.

The gas injection means may include a housing in which a plurality of gas supply holes for receiving the plurality of gases are formed, and a plurality of gas supply flow paths corresponding to the plurality of gas supply holes, respectively, and rotate in the housing. And it is effective to include a sealing member for shielding between the housing and the drive shaft and a plurality of gas injection portion connected to the gas supply flow path for injecting the plurality of gases into the reaction chamber, respectively.

The plasma generator may be installed outside the reaction chamber or on the gas injection means. At this time, it is preferable to install an internal waveguide in which power is induced inside the drive shaft.

Said gas injection part is connected with the 1st injection part connected to the source gas supply flow path, and injects a source gas, the 2nd injection part connected to the purge gas supply flow path, and injects a purge gas, and is connected with a part of the said internal waveguide. And it is preferable that it includes the 3rd injection part connected to the reaction gas supply flow path and supplying the plasma-formed reaction gas. It is effective that the first to third spray units have a hollow tube shape, and the third spray unit has a wider width than the first and second spray units. It is effective to provide a window between the waveguide and the third injection portion.

The plasma generator includes at least one of power generation means for producing power for plasma generation, tuning means for tuning the power source, an external waveguide for transmitting the tuned power source, the external waveguide, and the plurality of gas injection means. It may include a coupling member for connecting any one. Here, the coupling member preferably includes a rotation member for supporting the rotation of the drive shaft and a plasma power induction member for electrically connecting the external waveguide and the internal waveguide.

Here, the gas injection means is preferably movable on the substrate support. In addition, the plurality of gas injection means is effective to rotate horizontally relative to the substrate support. Of course, it is effective that the gas injecting means injects the plurality of gases by dividing the space on the substrate support. The gas injection means and the substrate support may rotate in opposite directions.

In addition, the present invention is a method for depositing a thin film on a substrate seated in the reaction chamber, supplying a plurality of gases to each of the gas injection means, and for generating plasma to at least one of the plurality of gases It provides a thin film deposition method comprising the step of supplying power and injecting each of the plurality of gases by dividing the interior of the reaction chamber into a plurality of spaces.

Here, the plurality of gases are supplied through a path separated from each other, and preferably include a source gas, a reaction gas, and a purge gas. At this time, the plurality of gas injection means is rotated, it is preferable that the plurality of gas and the power is supplied at the same time.

The plasma may be activated by an RF plasma generator, and the plasma may be activated by a microwave plasma generator.

In addition, as a method for depositing a thin film on a substrate seated in a reaction chamber according to the present invention, supplying a source gas and a purge gas, supplying a purge gas, and supplying a purge gas, It provides a thin film deposition method comprising the step of supplying, at the same time with the supply of the reaction gas to generate a plasma to the reaction gas supply line and supplying only the purge gas.

In addition, as a method for depositing a thin film on a substrate seated in the reaction chamber according to the present invention, supplying a source gas and a purge gas, supplying a reaction gas while supplying a purge gas, and the reaction It provides a thin film deposition method comprising the step of generating a plasma in the reaction gas supply line at the same time as the supply of gas.

Further, a method for depositing a thin film on a substrate seated in a reaction chamber according to the present invention, the method comprising the steps of supplying a source gas, supplying a purge gas, supplying a reaction gas, the reaction gas It provides a thin film deposition method for simultaneously performing the step of generating a plasma to the reaction gas supply line while supplying a.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Wherein like reference numerals refer to like elements throughout.

FIG. 2A is a cross-sectional view of the thin film manufacturing apparatus according to the present invention, and FIG. 2B is a cross-sectional view of the thin film manufacturing apparatus according to the present invention shown by cutting in a direction perpendicular to FIG. 2A. 3 is a perspective view of a gas injection means according to an embodiment of the present invention.

2A and 2B, a thin film manufacturing apparatus according to the present invention includes a reaction chamber 10, a substrate support 20 disposed in the reaction chamber 10, and a substrate 30 seated thereon, and a plurality of gases. A plurality of gas injectors (61, 62, 63, 64) to inject to the substrate 30 independently.

In addition, the gas supply means 100 further comprises a gas supply means (not shown) for supplying a plurality of gases to each independently. The apparatus may further include a plasma generator 200 connected to at least one of the plurality of gas injection units 61, 62, 63, and 64. The plasma generator 200 supplies power for plasma generation to the gas injection view 63 connected thereto. In addition, the gas discharge unit (not shown) for discharging the internal gas of the reaction chamber 10 may be further included.

The substrate support 20 includes a susceptor 21 on which the substrate 20 is seated, and a rotation shaft 22 for rotating the substrate support 20. In this embodiment, it is preferable that three to six susceptors 21 are disposed on the substrate support 20. The substrate support 20 may be provided with a separate gas outlet (not shown) for discharging the gas.

The substrate support 20 may rotate through its rotation shaft 22, and the susceptor 21 may also rotate through the rotation shaft 23. Alternatively, the substrate support 22 and the susceptor 21 may be fixed. In addition, only the susceptor 21 without the substrate support 20 may be located inside the reaction chamber 10.

The gas injection means 100 of the present embodiment may move on the substrate support 20. That is, the substrate support 20 may move in the horizontal direction. In addition, by dividing the space on the substrate support 20, different gases may be injected into the divided areas. Of course, the gas injection means 100 may be fixed. If the gas ejection means 100 and the substrate support portion 20 rotate simultaneously, the substrate support portion 20 and the gas ejection means 100 may rotate at different rotational speeds in the same direction, or in opposite directions. You can also rotate.

Hereinafter, the case where the gas injection means rotates will be described.

As shown in FIG. 2A and FIG. 2B, the rotating gas injection means includes a housing 40 in which a plurality of gas supply holes 41, 42, and 43 are provided to receive a plurality of gases, respectively, and the plurality of gas supply holes ( A plurality of gas supply flow paths 51, 52, and 53 corresponding to 41, 42, and 43, respectively, are provided and include a drive shaft 50 that rotates in the housing 40. In addition, it is effective that the housing 40 and the drive shaft 50 are sealed through separate sealing members 45. As the sealing member 45, a magnetic seal and a labyrinth seal can be used.

The housing 40 has a hollow cylindrical shape, and a plurality of gas supply holes 41, 42, 43 into which gas is injected is formed in the side wall. Each gas supply hole 41, 42, 43 is preferably connected to the gas supply means, respectively, to receive different gases. That is, in the present embodiment, the plurality of gas supply holes include a first gas supply hole 41 into which a source gas is injected, a second gas supply hole 42 through which a purge gas is supplied, and a third gas into which a reactive gas is injected. The gas supply hole 43 is included.

A plurality of gas supply flow paths 51, 52, and 53 corresponding to the gas supply holes 41, 42, and 43 are formed in the drive shaft 50, respectively. In addition, a plurality of gas injectors 61, 62, 63, and 64 connected to the gas supply passage and injecting a plurality of gases into the reaction chamber are located.

That is, the first gas supply passage 51 corresponding to the first gas supply hole 41 is formed in the drive shaft 50, and the end of the first gas supply passage 51, that is, one of the drive shafts 50. The first injection part 61 extending from the first gas supply passage 51 is formed on the side wall. In addition, second and fourth gas supply passages 52 corresponding to the second gas supply holes 42 are formed in the drive shaft 50, and the second and fourth extends from the ends of the second gas supply passages 52. Injection parts 62 and 64 are formed. The third gas supply passage 53 corresponding to the third gas supply hole 43 is formed in the drive shaft 50, and extends from at least a portion of the lower end of the drive shaft 50. 63) is formed.

Here, the source gas is introduced through the first gas supply hole 41, the purge gas is introduced through the second gas supply hole 42, and the reaction gas is introduced through the third gas supply hole 43.

In the present embodiment, when the source gas and the reaction gas are injected at the same time, the purge gas not only purges these gases but also serves as a barrier for preventing a reaction between the two gases. Accordingly, the second and fourth injection parts 62 and 64 are formed between the first and third injection parts 61 and 63 through which the source gas and the reaction gas are injected. Accordingly, the gas supply holes 42 and the gas supply passages 52 through which the purge gas is input may be separated into two, and as shown in FIG. 2B, the two gas supplies corresponding to the gas supply holes 42 may be provided. The flow path 52 may be provided in the drive shaft 50, and the gas supply flow path 52 having two separate branches at the end of the drive shaft 50 is formed to form the second and fourth injection parts 62 and 64, respectively. May be applied to.

In the present embodiment, as shown in FIG. 3, the first to fourth sprayers 61, 62, 63, and 64 are arranged in a cross shape perpendicular to each other. The first to fourth sprayers 61, 62, 63, and 64 are formed to have a hollow tube shape, and the third sprayer 63 has a width of the first, second, and fourth sprayers 61. , 62, 64). Of course, the present invention is not limited thereto, and angles and shapes thereof may vary according to atomic layer deposition conditions and deposition rates. The first to fourth sprayers 61, 62, 63, and 64 are provided with a plurality of gas spray nozzles in the direction of the substrate 21. At this time, it may vary depending on the spacing and spraying direction of the gas injection nozzle, the atomic layer deposition conditions and the deposition rate and film uniformity. In addition, a portion of the ends of the first, second, and fourth injection parts 61, 62, and 63 may be bent to be connected to the gas supply flow path exposed to the side wall of the driving shaft.

It is effective that a separate inner waveguide 80 is formed in a predetermined region of the drive shaft 50 to guide power. That is, a predetermined through hole penetrating from the upper portion of the drive shaft 50 to the lower portion may be formed, and an inner waveguide 80 may be formed by filling the inside with a conductive metal to transmit power for plasma generation. As shown in FIG. 2B, the driving shaft 50 may be formed in a cylindrical shape having an empty center and coated with a conductive material such as copper on the sidewall of the driving shaft 50 and used as the inner waveguide 80.

Accordingly, it is preferable that at least a part of the waveguide 80 is connected to the third injection unit 63. When the waveguide 80 is formed at the center of the drive shaft 50, it is preferable that a predetermined window 70 is provided between the lower end of the drive shaft 50 and the third injection portion 63. Through this, plasma power induced by the internal waveguide 80 may be applied to the third injector 63 to generate plasma in the third injector 63.

4A is a conceptual perspective view illustrating the coupling between the drive shaft and the third injection unit of the present invention, and FIG. 4B is a cross-sectional view taken along the line AA ′ of FIG. 4A.

4A and 4B, a window 70 is installed between the drive shaft 50 and the third injection part 63. The window 70 is formed of a material film through which plasma power can be easily transmitted. In this embodiment, sapphire is preferably used. As shown in the figure, the size of the window 70 is formed in the same size as the through hole formed in the drive shaft 50. Of course, the present invention is not limited thereto, and may be larger or smaller than the size of the through hole. In this case, in order to prevent the window 70 from being excessively inserted into the drive shaft 50, a separate protrusion may protrude into the inner wall of the drive shaft 50 as shown in FIG. 4B. In addition, a portion of the upper portion of the third jetting portion 63 may be recessed to prevent the window 70 from being separated. In addition, an O-ring 71 is installed between the window 70 and the third injection part 63 to prevent the window 70 from being separated and destroyed by an external influence. Of course, an O-ring may be installed between the window 70 and the drive shaft 50.

As described above, the inner waveguide 80 is formed on the inner wall of the drive shaft 50 and extends to the upper portion of the window 70, and the power for plasma generation induced through the inner waveguide 80 passes through the window 70. As a result, the plasma is radiated into the inner space of the third injector 63 to generate plasma in the third injector 60. At this time, the generated plasma is diffused into the third injection unit 63. In addition, as illustrated, a predetermined through hole corresponding to the third gas supply passage 53 is formed at the end of the third injection unit 63 and injected through the third gas supply passage 53. At this time, since the plasma is generated in front of the region in which the gas is injected, it is easy to activate the reaction gas into the plasma. Of course, the present invention is not limited thereto, and since the plasma is spread into the third injection unit 63, a through hole may be formed in the front region where the plasma is generated.

In the above description, the waveguide is formed on the inner wall of the drive shaft. However, the present invention is not limited thereto. In the case where the waveguide is formed inside the drive shaft, the waveguide and a part of the third jetting portion overlap with each other, as described above. Is formed. The waveguide may also be formed on the outer side of the drive shaft.

As the plasma generator 200 of the present invention, a magnetron that generates microwaves of 2.54 GHz may be used. Microwaves generated from the magnetron are transferred into the gas injector 63 connected through the window 70 through the external waveguide 220 and the internal waveguide 80 inside the drive shaft 50, and then inside the gas injector 63. To form a plasma. The plasma generator 200 may be installed outside the reaction chamber or may be installed inside the driving shaft 50.

The plasma generating apparatus 200 according to the present embodiment includes power generation means 210 for producing power for plasma generation, tuning means 211 for tuning the power, and external waveguide 220 for transmitting the tuned power. ).

In addition, it includes a coupling member 230 for connecting at least one of the external waveguide 220 and the plurality of gas injection means (100). That is, the external waveguide 220 and the internal waveguide 80 formed on the drive shaft 50 are connected through the coupling member 230.

Accordingly, the coupling member 230 includes a rotation member 231 for supporting the rotation of the drive shaft 50 and a plasma power induction member 235 electrically connecting the external waveguide 220 and the internal waveguide 80. do. The drive shaft 50 is connected to the external waveguide 220 by the rotating member 231 to perform a rotational movement. As the rotating member 231, a bearing is preferably used. In this embodiment, it is effective to use a donut shaped bearing with an empty inside. Here, the lower drive shaft 50 and the rotating member 231 rotates, and the external waveguide 220 is fixed. Accordingly, in order to apply the plasma generation power applied to the fixed external waveguide 220 to the rotating drive shaft 50, the plasma power induction member 235 having a circular band is mounted on the inner region of the rotating member 231. However, a portion thereof protrudes, and a predetermined groove is formed in the external waveguide 220 so that the protruding portion is inserted into the groove. At this time, as the plasma power induction member 235 rotates together with the rotation member 231, the groove shape of the external waveguide 220 into which the plasma power induction member 235 is inserted is the same as that of the plasma power induction member 235. It is preferable to form in a shape and to make these electrically connect with each other. For this purpose, the plasma power source induction member 235 uses a material having excellent conductivity, and a material having excellent conductivity may also be separately coated inside the groove of the external waveguide 220. Of course, it is effective to be physically spaced apart to reduce the physical wear force. It is preferable that the plasma power source induction member 235 is electrically or physically connected to the internal waveguide 80, and most preferably, it is electrically connected. This is because the high frequency power source may be able to transfer the power beyond the spaced interval even though it is physically spaced to some extent.

At this time, the upper portion of the window is at atmospheric pressure and the lower portion of the window is in a vacuum state. Therefore, plasma is generated by the microwaves applied inside the reactive gas injection unit in a vacuum state. In addition, the drive shaft, which is a rotatable waveguide, is connected to the gas injectors at the bottom thereof, and the top thereof is connected to the lip seal to rotate simultaneously. In addition, the drive shaft and the housing are connected to the magnetic seal to maintain a vacuum. In addition, it is preferable that an EMI shield (Electro Magnetic Interference shield) 90 is formed around the housing to reduce electromagnetic interference.

Unlike the above-described embodiment, a plasma generator using RF power may be used as the plasma generator. After forming an RF plasma in a plasma generator having a separate reaction space on the third gas supply line to activate the third gas, the chamber 10 may be opened through the third gas injection unit 63 of the gas injection means 100. Supply inside. In this case, the third gas supply line may not be connected to the gas supply hole 43 of the driving shaft, but may be connected to the internal waveguide 80 inside the driving shaft 50.

Hereinafter, the atomic layer deposition method using the thin film manufacturing apparatus of this invention which has the structure mentioned above is demonstrated.

5 is a plan view of a thin film manufacturing apparatus for explaining the atomic layer deposition method according to the present invention. 6A to 6C are conceptual views illustrating the atomic layer deposition method according to the present invention.

And a gas injection means 100 including a plurality of gas injection parts 61, 62, 63, and 64 that respectively inject a plurality of gases to the substrate 30 independently.

5 and 6A to 6C, in the present embodiment, the gas supplied through the independent supply paths to the gas injection means 100 including the plurality of gas injection parts 61, 62, 63, and 64, respectively. Supplies a power, supplies power for generating plasma to at least one of the gas injectors, and injects gas into the reaction chamber 10. In this case, one gas may be injected into the divided spaces, a plurality of gases may be injected simultaneously, and a plurality of gases may be sequentially injected.

Referring to the case where the source gas, the reaction gas, and the purge gas are used as the plurality of gases, and the processes are performed by spraying them on the substrate 30 through the rotating gas injection means 100, FIG. As shown in the drawing, five substrates 31, 32, 33, 34, and 35 are disposed in the chamber 10, and a first injection part 61 for injecting a source gas thereon and a purge gas are injected thereon. The second and fourth injection units 62 and 64 and the third injection unit 63 for injecting the reactive gas activated by the plasma are positioned.

When the rotary motion is performed while supplying the respective gas to the injection parts 61, 62, 63, and 64, each substrate receives the gas in the order of source gas, purge gas, activated reaction gas, and purge gas.

Accordingly, various atomic layer deposition methods may be performed.

Source gas injection-purge-plasma / reaction gas injection-purge is possible. That is, as shown in FIG. 5 and FIG. 6A, the source gas S is injected through the first injection unit 61 in the first rotation of the gas injection unit 100, and the second and fourth injection units 62 are disposed. , 64) to purge the gas (P). The injection of the source gas S is stopped in the second rotation of the gas injection means 100, and then the continuous source gas S is injected by continuously spraying the purge gas P through the second and fourth injection parts 62 and 64. Purge) Next, in the third rotation of the gas injection means 100, the reaction gas through the third injection portion 63 while the purge gas P is continuously injected by the second and fourth injection portions 62 and 64. While spraying (R), plasma power is applied to the third jetting section 63 to generate plasma PE. Finally, in the fourth rotation of the gas injection means 100, the plasma power applied to the third injection unit 63 is cut off, the supply of the reaction gas R is stopped, and the second and fourth injection units 62 and 64 are stopped. Continuous purge gas (P) is injected through) to purge the residual gas.

The rotation is repeated in one cycle to deposit a thin film on the substrate.

Through the above-described process, the reaction time between the source gas and the reactive gas to react to form a predetermined material film can be shortened, and the purge time of the source gas and the reactive gas can be shortened. In addition, by allowing time for a separate purge, not only the source gas that has not been adsorbed on the wafer can be completely purged, but also the plasma-reacted gas that has not reacted with the source gas can be completely removed.

In addition, the source injection and the purge can be performed simultaneously, and the plasma / reaction gas injection and the purge can be performed simultaneously.

That is, as shown in FIG. 5 and FIG. 6B, the source gas S is injected through the first injection unit 61 in the first rotation of the gas injection unit 100, and the second and fourth injection units 62, 64, the purge gas (P) is injected at the same time to purge at the same time as the source gas (S) injection. This is because the source gas S is injected by the first injection unit 61 and then the source gas is injected by the purge gas P injected by the fourth injection unit 64 following the first injection unit 61. (S) is purged. Thereafter, the source gas S is blocked, and then the reaction gas R is injected through the third injection unit 63 at the second rotation of the gas injection means 100, and at the same time, the plasma power is applied to the plasma PE. ). At the same time, the purge gas P is injected through the second and fourth injection units 62 and 64 at the same time, and the purge is performed simultaneously with the plasma PE / reaction gas R injection. This is because plasma is reacted by the purge gas P injected by the second injector 62 followed by the third injector 63 after the reaction gas plasmad by the third injector 63 is injected. The reaction gas is purged.

The rotation is repeated in one cycle to deposit a thin film on the substrate.

As described above, since the purge is not performed after the source gas injection and after the plasma reaction gas is injected, the reaction time between the atomic layer deposition process and the source gas and the reaction gas can be shortened.

In addition, the atomic layer deposition method according to the present invention may simultaneously spray the source gas, purge gas, plasma / reaction gas. That is, as illustrated in FIGS. 5 and 6C, the source gas is injected through the first injection unit, the purge gas is injected through the second and fourth injection units, and the reaction gas R is injected through the third injection unit 63. ) And generate a plasma by applying a plasma power supply. This allows atomic layer deposition to be carried out continuously.

This includes the first injection unit 61 for injecting the source gas S, the second and fourth injection units 62 and 64 for injecting the purge gas P, and the plasma PE / reaction gas R. Since the 3rd injection part 63 which injects forms the angle of 90 degrees, respectively, and it rotates by a fixed speed in a predetermined direction, it is possible. That is, as shown in FIG. 5, the source gas S is injected onto the first wafer 31 by the first injector 61, and the second to fifth wafers 32, 33, 34, and 35 are discharged. The source gas S is continuously sprayed on the phase. At this time, the source gas S which is not adsorbed on the first wafer 31 is purged by the fourth injection unit 64 following the first injection unit 61. Then, the plasma-reacted reaction gas is injected by the third injection unit 63 following the fourth injection unit 64 to react with the source gas S on the first wafer 31 to form a predetermined material film. . Next, the gases remaining unreacted are purged by the second injector 62 following the third injector 63.

Here, the purge gas injected from the second and fourth injectors 62 and 64 is not only purged, but also the source gas injected from the first injector 61 and the plasma injected from the third injector 63. The reaction gases may be mixed with each other to prevent a shape from reacting.

In this way, the process time for atomic layer deposition can be drastically reduced by continuously spraying in a single chamber without the process of repeatedly supplying and shutting off gases, and the reaction rate between the source gas and the reaction gas by injecting the plasma-formed reaction gas. It is possible to improve the deposition rate of the film by improving the.

When forming the oxide film in the above, it is preferable to use a gas whose main source is at least one of Si _n X _2n , Si _n O _{n -1} X _{2n +2} , and Si _n X _{2n +2} as the source gas. . Here, n is an integer between 2 and 25, and X is preferably an element of any one of F, Cl, Br and l. It is also preferable to use a mixed gas of H ₂ and O ₂ as the reaction gas. And it is effective to use Ar as the purge gas.

Alternatively, when forming a TiN thin film, it is effective to use TiC ₄ as a source gas, NH ₃ as a reaction gas, and Ar as a purge gas.

Moreover, the injection part of this invention is being fixed and the lower board | substrate support part may rotate. Briefly described, since the injection unit is fixed, a plurality of gas supply passages are formed in which the source gas, the purge gas, and the reaction gas are respectively injected from the gas supply unit into the cylindrical body and supplied to the injection unit. In addition, an inner waveguide is formed in the body, and the inner waveguide can be directly connected without an apparatus (rotating member and plasma power inducing member) for separate connection with the outer waveguide of the plasma power supply. That is, the inner waveguide and the outer waveguide may be formed as one line. This allows various types of plasma power supplies to be used. Hereinafter, descriptions that overlap with the above description will be omitted.

Even when the above-described injection unit is fixed and the lower substrate support unit rotates, the above-described various atomic layer deposition methods are possible.

In the thin film manufacturing apparatus of this invention, a board | substrate support part and gas injection means may rotate simultaneously. At this time, each may rotate in different directions, or may rotate in the same direction.

As described above, the present invention can drastically reduce the atomic layer deposition process time by continuously supplying source gas, purge gas, and reaction gas into the chamber simultaneously without the process of repeatedly supplying and shutting off a plurality of gases.

In addition, the deposition rate of the film may be improved by injecting the plasma-formed reaction gas to improve the reaction rate between the source gas and the reaction gas.

Claims (22)

Reaction chamber; A substrate support installed in the reaction chamber and on which a substrate is mounted; Gas injecting means for injecting a plurality of gases independently onto the substrate and including a plurality of gas injectors movable on the substrate support; And A plasma generator connected to at least one of the plurality of gas injection units; / RTI &gt; At least one of the plurality of gas injection unit further comprises an inner space in which the plasma is generated thin film manufacturing apparatus. The method according to claim 1, The substrate support portion, A plurality of susceptors for seating the substrate; And A rotating shaft for rotating the substrate support; Thin film manufacturing apparatus comprising a. delete The method according to claim 1, The apparatus for manufacturing a thin film, wherein the plasma generator is provided outside the reaction chamber or on the gas injection means. The method according to claim 1, wherein the gas injection means, A housing in which a plurality of gas supply holes for receiving the plurality of gases are formed; A drive shaft having a plurality of gas supply passages respectively corresponding to the plurality of gas supply holes and rotating in the housing; An internal waveguide through which power is induced inside the drive shaft; Thin film manufacturing apparatus comprising a. The method according to claim 1, wherein the gas injection unit, A first injector for injecting a source gas; A second injector for injecting purge gas; And A third injector for supplying a plasma reaction gas; Thin film manufacturing apparatus comprising a. The method of claim 6, A waveguide formed between the third sprayer and the plasma generator Thin film manufacturing apparatus comprising a. The method of claim 7, The thin film manufacturing apparatus which provided the window between the said wave guide and the said 3rd injection | disconnection part. delete delete delete The method according to claim 1, The gas injecting means is a thin film manufacturing apparatus for horizontal rotational movement with respect to the substrate support. The method according to claim 1, And the plurality of gas injection means divides the space on the substrate support to inject the plurality of gases, respectively. The method according to claim 1, And the gas ejection means and the substrate support portion rotate in opposite directions to each other. As a method for depositing a thin film on a substrate seated in the reaction chamber, Supplying each of the plurality of gas injection means through a path separated from each other, the plurality of gases including a source gas, a reaction gas, and a purge gas; Plasmaizing the reaction gas by generating a plasma in a reaction gas supply line simultaneously with the supply of the reaction gas; And And dividing the inside of the reaction chamber into a plurality of spaces to inject each of the plurality of gases. delete 16. The method of claim 15, And a plurality of gas injection means are rotated and the plurality of gases and power are supplied simultaneously. 16. The method of claim 15, And the plasma is activated by an RF plasma generator. 16. The method of claim 15, And the plasma is activated by a microwave plasma generator. A method for depositing a thin film on a substrate seated in a reaction chamber, Supplying a source gas and a purge gas; Supplying a purge gas; Supplying a reaction gas while supplying a purge gas; Generating a plasma in a reaction gas supply line at the same time as the supply of the reaction gas; And Supplying only purge gas; Thin film deposition method comprising a cycle. delete delete

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