TW202338980A - Substrate processing method and substrate processing apparatus suppressing the influence of processing gas released from a substrate processed in a processing chamber on a transport chamber - Google Patents

Abstract

The present invention provides a substrate processing method and a substrate processing apparatus that suppress the influence of processing gas released from a substrate processed in a processing chamber on a transport chamber. The substrate processing method includes: a step of performing a first processing on the substrate in a first processing chamber; a step of performing a second processing on other substrate in a second processing chamber; and after performing the first processing, a step of placing the substrate on standby in the first processing chamber; a step of using the transport device to transport the substrate from the first processing chamber to the transport chamber after a first time has elapsed from the time when the second processing on the other substrate is completed; and a step of using the transport device to transport the substrate to the second processing chamber after the step of starting to transport the substrate to the transport chamber and exchanging the substrate with other substrate in the second processing chamber.

Description

Substrate processing method and substrate processing device

The present disclosure relates to a substrate processing method and a substrate processing device.

Patent Document 1 describes a semiconductor device manufacturing apparatus that is provided with an etching chamber, an ashing chamber, and a transfer chamber having a transfer arm for transferring wafers, and the substrate is transferred from the etching chamber to the transfer arm through the transfer arm. Transfer to the ashing chamber.

Patent Document 1: Japanese Patent Application Publication No. 2006-108470

From one aspect, the present disclosure provides a substrate processing method and a substrate processing apparatus that suppress the influence of processing gas released from a substrate processed in a processing chamber on a transfer chamber.

In order to solve the above problems, according to one aspect, there is provided a substrate processing method in a substrate processing apparatus including a plurality of processing chambers for processing a substrate; the plurality of processing chambers at least have a first processing chamber that performs a first processing on the substrate and a second processing chamber that performs a second processing on the substrate; the substrate processing apparatus includes a transfer chamber that is connected to the first processing chamber and The second processing chamber is adjacent and has a transport device capable of transporting the substrate; the substrate processing method includes: performing the first process on the substrate in the first processing chamber; and performing the first process on the substrate in the second processing chamber. The process of subjecting the second process to other substrates in the processing chamber; the process of waiting for the substrate in the first process chamber after the process of subjecting the first process; from the process of subjecting the other substrates to the second process; 2. After the first time has elapsed from the time when the processing is completed, the transport device starts the process of transporting the substrate from the first processing chamber to the transport chamber; and after starting to transport the substrate to the transport chamber After the process, the substrate is transported to the second processing chamber by the transport device, and the substrate and other substrates are replaced in the second processing chamber.

According to one aspect, it is possible to provide a substrate processing method and a substrate processing apparatus that suppress the influence of processing gas released from a substrate processed in a processing chamber on a transfer chamber.

Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In addition, in each drawing, the same or corresponding components may be assigned the same reference numerals and description thereof may be omitted.

A substrate processing apparatus according to one embodiment will be described using FIG. 1 . FIG. 1 is a schematic diagram showing an example of the structure of a substrate processing apparatus. The substrate processing device is, for example, a processing device that processes a rectangular glass substrate used in manufacturing FPD (Flat Panel Display).

As shown in FIG. 1 , the substrate processing apparatus includes a vacuum transfer chamber 110 , processing chambers 121 to 125 , a load lock chamber 130 , a transfer device 140 , and a control unit 160 , and is connected to a separately prepared atmospheric transfer chamber. 150. In addition, the load lock chamber 130 may be provided in one layer or in two layers, one above the other. In addition, the atmosphere transfer chamber 150 does not necessarily need to be configured as a sealed container, and may have a cylindrical side wall with an upper side open or may be partially partitioned by a wall member.

The vacuum transfer chamber 110 is adjacent to the processing chambers 121 to 125 and the load lock chamber 130 . The pressure inside the vacuum transfer chamber 110 is reduced to a predetermined vacuum environment atmosphere. The vacuum transfer chamber 110 is provided with a transfer device 140 capable of transferring the substrate G in a reduced pressure state. The transport device 140 transports the substrate G to the processing chambers 121 to 125 and the load lock chamber 130 . The conveying device 140 has, for example, two conveying arms 141 and 142 provided on two levels, upper and lower. In FIG. 1 , the transfer arm 141 is shown as an upper arm, and the transfer arm 142 is shown as a lower arm. In addition, the transport device 140 is rotatably provided to face the processing chambers 121 to 125 and the load lock chamber 130 . The transfer arms 141 and 142 can slide forward and backward independently, and are configured to hold the substrate G and transfer it. In addition, in FIGS. 3 and 4 described later, the vacuum transfer chamber 110 is also called VTM (Vacuum Transfer Module).

The processing chambers 121 to 125 are connected to the vacuum transfer chamber 110 via gate valves GV1 to GV5 respectively. The pressure inside the processing chambers 121 to 125 is reduced to a predetermined vacuum environment atmosphere, and a desired process is performed on the substrate G such as a glass substrate inside. In addition, in FIGS. 3 and 4 described later, the processing chambers 121 to 125 are also called PM (Process Module) 1 to PM5. In addition, the processing chambers 121 to 124 are etching processing chambers for performing etching processing on the substrate G. In addition, the processing chamber 125 is an ashing processing chamber that performs ashing processing on the substrate G.

The load lock chamber 130 is connected to the vacuum transfer chamber 110 via the gate valve GV6, and is connected to the atmospheric transfer chamber 150 via the gate valve GV7. The load lock chamber 130 is configured to be switchable between an atmospheric environment and a vacuum environment. In addition, in FIGS. 3 and 4 described below, the load lock chamber 130 is also called an LLM (Load Lock Module).

The atmospheric transfer chamber 150 is adjacent to the load lock chamber 130 . An atmospheric environment atmosphere is formed in the atmospheric transfer chamber 150 . In addition, the atmospheric transport chamber 150 is provided with an atmospheric transport device (not shown) capable of transporting the substrate G.

The control unit 160 controls each unit of the substrate processing apparatus. For example, the control unit 160 executes the operations of the processing chambers 121 to 125, the load lock chamber 130, the transport device 140, opening and closing of the gate valves GV1 to GV7, and the like. For example, the control unit 160 may be a computer.

In the substrate processing apparatus, etching processing (first processing) is performed in any one of the processing chambers 121 to 124 (first processing chamber), and etching processing (first processing) is performed in processing chamber 125 (second processing chamber). Implement ashing treatment. In addition, the ashing process includes a main process 301 (second process) and a subsequent process 302 (third process) shown in FIG. 3 to be described later.

Next, the substrate processing method of the substrate processing apparatus will be described using FIGS. 2 and 3 . FIG. 2 is a flow chart illustrating an example of a substrate processing method related to the present disclosure.

In addition, FIG. 3 is a diagram illustrating an example of the flow of the substrate processing method related to the present disclosure. In addition, in FIG. 3 , each series represents the load lock chamber 130 (LLM), the vacuum transfer chamber 110 (VTM), the processing chamber 121 (PM1), the processing chamber 122 (PM2), and the processing chamber 123. (PM3), processing chamber 124 (PM4), and processing chamber 125 (PM5). In addition, the downward direction represents the flow of time. In addition, the time during which the etching process is performed in the processing chambers 121 to 124 (PM1 to PM4) is indicated by a diagonal line going downward to the left. The time when the ashing process (the main process 301 and the subsequent process 302) is performed in the processing chamber 125 (PM5) is indicated by a diagonal line going downward to the right. In addition, the time when any one of the gate valves GV1 to GV6 is opened to connect the vacuum transfer chamber 110 to other adjacent chambers (the processing chambers 121 to 125 and the load lock chamber 130) is indicated by dotted shading. Make a diagram. In addition, the conveyance path of the board|substrate G is shown with the arrow.

Here, as shown in FIG. 3 , substrate processing is performed in the processing chambers 121 to 125 (PM1 to PM5) respectively. In addition, one transfer arm 142 of the transfer device 140 holds the substrate G that has completed the ashing process, while the other transfer arm 141 does not hold the substrate. In addition, the unprocessed substrate G is placed in the load-lock chamber 130 (LLM), and the inside of the chamber is a vacuum environment atmosphere.

In step S101, the control unit 160 transfers the unprocessed substrate G from the load lock chamber 130 (LLM) to the vacuum transfer chamber 110 (VTM). In other words, the substrate G in the load lock chamber 130 (LLM) and the substrate G in the vacuum transfer chamber 110 (VTM) are replaced. Specifically, the control unit 160 opens the gate valve GV6 to communicate the load lock chamber 130 and the vacuum transfer chamber 110 . The control unit 160 controls the transfer device 140 to use the transfer arm 141 to hold the substrate G placed on the loading part of the load lock chamber 130 and transfer the unprocessed substrate G from the load lock chamber 130 to the vacuum transfer chamber 110 . In addition, the control unit 160 controls the transport device 140 to transport the ashed substrate G held by the transport arm 142 from the vacuum transport chamber 110 to the load lock chamber 130 and place it on the load lock chamber 130 Loading part. Then, the control unit 160 closes the gate valve GV6.

In step S102, the control unit 160 makes the unprocessed substrate G wait in the vacuum transfer chamber 110 (VTM). Specifically, in the vacuum transfer chamber 110 , the transfer arm 141 waits while holding the unprocessed substrate G. In addition, the transfer arm 142 does not hold the substrate.

In step S103, the control unit 160 transfers the unprocessed substrate G from the vacuum transfer chamber 110 (VTM) to any one of the processing chambers 121 to 124 (PM1 to PM4). Here, the case where the substrate G is transported to the processing chamber 121 (PM1) will be described as an example. In other words, the substrate G in the processing chamber 121 (PM1) and the substrate G in the vacuum transfer chamber 110 (VTM) are replaced. Specifically, the control unit 160 opens the gate valve GV 1 to communicate the processing chamber 121 and the vacuum transfer chamber 110 . The control unit 160 controls the transport device 140 to use the transport arm 142 to hold the substrate G placed on the placement portion of the processing chamber 121 and transport the substrate G on which the etching process has been completed from the processing chamber 121 to the vacuum transport chamber 110 . In addition, the control unit 160 controls the transfer device 140 to transfer the unprocessed substrate G held by the transfer arm 141 from the vacuum transfer chamber 110 to the processing chamber 121 and place it on the placement portion of the processing chamber 121 . Then, the control unit 160 closes the gate valve GV1.

In step S104, the control unit 160 performs an etching process (first process) on the substrate G in the processing chamber 121 (PM1). Here, in the processing chamber 121 (122~124), a halogen-containing gas (corrosive gas, chlorine-containing gas) such as chlorine (Cl) is supplied into the processing chamber 121 (122~124) as a processing gas. The processing gas is plasmaized by a plasma generating mechanism (not shown), and the substrate G is etched by the plasma. Therefore, the processing gas of the etching process remains on the substrate G after the etching process.

In step S105, the control unit 160 causes the substrate G on which the etching process has been completed to wait in the processing chamber 121 (PM1). Specifically, the processing chamber 121 waits with the substrate G on which the etching process has been completed placed on the placing portion of the processing chamber 121 .

In step S106, the control unit 160 estimates the end time point 304 of the ashing process of the other substrate G (see FIG. 3), and calculates the replacement start time point 305 (see FIG. 3). Here, the end time 304 of the ashing process is the time 304 when the process performed on the other substrate G in the processing chamber 125 (the main process 301 and the subsequent process 302 described below) ends. In addition, the replacement start time point 305 is when the process of replacing the etching-processed substrate G placed on the mounting portion of the processing chamber 121 with the unprocessed substrate G held by the conveying device 140 of the vacuum conveying chamber 110 is started ( Refer to the time point of the processing of step S108 (described later).

Here, the replacement start time point 305 is set so that the etching-processed substrate G placed on the placement portion of the processing chamber 121 and the unprocessed substrate G held by the transfer device 140 of the vacuum transfer chamber 110 are replaced. After the processing of the substrate G (refer to the processing of step S108 described below) is completed, the transport device 140 of the vacuum transport chamber 110 can immediately start to replace the ashed substrate G placed on the mounting portion of the processing chamber 125 and the vacuum transport chamber 110 . Processing of the retained substrate G on which the etching process has been completed (refer to the process of step S109 described later). In other words, the replacement start time point 305 is set so that the etching-processed substrate G placed on the placing portion of the processing chamber 121 and the unprocessed substrate held by the conveying device 140 of the vacuum conveying chamber 110 are exchanged. The process of G (refer to the process of step S108 to be described later) and the ashing process of the processing chamber 125 (the main process 301 and the subsequent process 302 to be described later) are completed at the same time point.

The control unit 160 estimates the completion time point 304 of the ashing process in the processing chamber 125 based on the etching-processed substrate G placed on the placement portion of the processing chamber 121 and the transfer device 140 of the vacuum transfer chamber 110 The replacement start time point 305 is calculated based on the replacement time required for the replacement process (refer to the process of step S108 to be described later) of the held unprocessed substrate G (the time required for the process of step S108 to be described later, the third time). That is, the replacement start time point 305 is a time point that goes back by the replacement time (third time) from the end time point 304 of the ashing process.

Here, the ashing process includes a main process 301 in which a process gas is supplied to the substrate G and a plasma generation mechanism (not shown) plasmaizes the process gas to perform the ashing process, and a subsequent process performed after the main process 301 Process 302. The subsequent processing 302 includes, for example, a destaticizing process of decharging the substrate G electrostatically adsorbed on the mounting portion of the processing chamber 125 to release the adsorption. In addition, in the main process 301 , the control unit 160 detects the end time 303 of the main process 301 by detecting the luminescence state of the plasma used in the ashing process inside the processing chamber 125 .

In this case, the control unit 160 may estimate the end time point 304 of the ashing process based on the end time point 303 of the main process 301 and the time required for the subsequent process 302 (second time). In addition, when the time required for the subsequent processing 302 (the second time) is longer than the replacement time (the third time), the control unit 160 can determine the time required for the subsequent processing 302 (the third time) based on the end time 303 of the main processing 301. 2 time), and the replacement time (third time) to calculate the replacement start time point 305. In other words, the control unit 160 can calculate the time from the end time 303 of the main process 301 to the time required for the subsequent process 302 (second time), and the replacement time (third time). The waiting time until the replacement start time point 305 (first time). That is, the standby time (third time) from the end time 303 of the main process 301 to the replacement start time 305 is calculated from the difference between the time required for the subsequent processing 302 (second time) and the replacement time (third time). 1 time). In addition, the time required for the subsequent processing 302 (second time) and the replacement time (third time) are known values determined by the configuration of the substrate processing apparatus. In the example of FIG. 3 , the replacement start time point 305 can be calculated at the end time point 303 of the formal process 301 ( S106 ).

In addition, the control unit 160 may estimate the time required for the main process 301 based on past performance, the time required for the main process 301 estimated from the start time of the ashing process of the other substrate G, and the time required for the subsequent process 302. The end time point 304 of the ashing process is estimated at the time (second time). Then, the control unit 160 can calculate the replacement start time point 305 based on the end time point 304 of the ashing process and the replacement time (third time). In this configuration, even if the time required for the subsequent processing 302 (second time) is shorter than the replacement time (third time), the replacement start time point 305 can be calculated.

In step S107, the control unit 160 determines whether it is the replacement start time point. If it is not the replacement start time (S107: No), the process of the control unit 160 repeats step S107. That is, the substrate G on which the etching process has been completed is placed on standby in the processing chamber 121 (PM1). If it is the replacement start time point (S107: Yes), the process of the control unit 160 proceeds to step S108. In other words, it is determined whether the waiting time (first time) has elapsed since the end time 303 of the main process 301 . If the waiting time (first time) has not elapsed (S107: No), the process of the control unit 160 repeats step S107. When the waiting time (first time) has elapsed (S107: Yes), the process of the control unit 160 proceeds to step S108.

In step S108, the control unit 160 transfers the substrate G on which the etching process has been completed from the processing chamber 121 (PM1) to the vacuum transfer chamber 110 (VTM). In other words, the substrate G in the processing chamber 121 (PM1) and the substrate G in the vacuum transfer chamber 110 (VTM) are replaced. Specifically, the control unit 160 opens the gate valve GV1 to communicate the processing chamber 121 and the vacuum transfer chamber 110 . The control unit 160 controls the transport device 140 to use the transport arm 142 to hold the substrate G placed on the placement portion of the processing chamber 121 and transport the substrate G on which the etching process has been completed from the processing chamber 121 to the vacuum transport chamber 110 . In addition, the control unit 160 controls the transfer device 140 to transfer the unprocessed substrate G held by the transfer arm 141 from the vacuum transfer chamber 110 to the processing chamber 121 and place it on the placement portion of the processing chamber 121 . Then, the control unit 160 closes the gate valve GV1. In addition, every time the transport device 140 transports the substrate G to any one of the processing chambers 121 to 125 and the load lock chamber 130, the transport arm holding the substrate G is replaced between the transport arm 141 and the transport arm 142. . Therefore, without being limited to the above description, depending on the holding state of the substrate G, the transport arm 141 may be used to transport the substrate G that has completed the etching process out of the processing chamber 121 ( PM1 ), and the transport arm 142 may be used to transport the unprocessed substrate G into the processing chamber. Chamber 121 (PM1).

In step S109, the control unit 160 transfers the substrate G on which the etching process has been completed from the vacuum transfer chamber 110 (VTM) to the processing chamber 125 (PM5). In other words, the substrate G in the processing chamber 125 (PM5) and the substrate G in the vacuum transfer chamber 110 (VTM) are replaced. Specifically, the control unit 160 opens the gate valve GV5 to communicate the processing chamber 125 and the vacuum transfer chamber 110 . The control unit 160 controls the transport device 140 to use the transport arm 141 to hold the substrate G placed on the loading part of the processing chamber 125 and transport the substrate G that has completed the ashing process from the processing chamber 125 to the vacuum transport chamber. 110. In addition, the control unit 160 controls the transport device 140 to transport the etched substrate G held by the transport arm 142 from the vacuum transport chamber 110 to the processing chamber 125 and place it on the placement portion of the processing chamber 125 . Then, the control unit 160 closes the gate valve GV5.

In step S110, the control unit 160 performs ashing processing on the substrate G (second processing). During the ashing process of the processing chamber 125, the processing gas (halogen-containing gas, corrosive gas, chlorine-containing gas) remaining in the etching process of the substrate G that has been etched is also removed.

In step S111, the control unit 160 transfers the substrate G on which the etching process has been completed from the processing chamber 125 (PM5) to the vacuum transfer chamber 110 (VTM). In other words, the substrate G in the processing chamber 125 (PM5) and the substrate G in the vacuum transfer chamber 110 (VTM) are replaced. Specifically, the control unit 160 opens the gate valve GV5 to communicate the processing chamber 125 and the vacuum transfer chamber 110 . The control unit 160 controls the transport device 140 to use the transport arm 142 to hold the substrate G placed on the placement portion of the processing chamber 125 and transport the ashed substrate G from the processing chamber 125 to the vacuum transport chamber. 110. In addition, the control unit 160 controls the transport device 140 to transport the etched substrate G held by the transport arm 141 from the vacuum transport chamber 110 to the processing chamber 125 and place it on the placement portion of the processing chamber 125 . Then, the control unit 160 closes the gate valve GV5.

In step S112, the control unit 160 transfers the substrate G that has completed the ashing process from the vacuum transfer chamber 110 (VTM) to the load lock chamber 130 (LLM). In other words, the substrate G of the load lock chamber 130 (LLM) and the substrate G of the vacuum transfer chamber 110 (VTM) are replaced. Specifically, the control unit 160 opens the gate valve GV6 to communicate the load lock chamber 130 and the vacuum transfer chamber 110 . The control unit 160 controls the transfer device 140 to use the transfer arm 141 to hold the substrate G placed on the loading part of the load lock chamber 130 and transfer the unprocessed substrate G from the load lock chamber 130 to the vacuum transfer chamber. Room 110. In addition, the control unit 160 controls the transport device 140 to transport the ashed substrate G held by the transport arm 142 from the vacuum transport chamber 110 to the load lock chamber 130 and place it in the load lock chamber. 130 mounting part. Then, the control unit 160 closes the gate valve GV6.

After that, the control unit 160 switches the load lock chamber 130 from the vacuum environment atmosphere to the atmospheric environment atmosphere. When the load lock chamber 130 becomes the atmospheric environment, the control unit 160 opens the gate valve GV7 to communicate the load lock chamber 130 with the atmospheric transfer chamber 150 . The control unit 160 controls the atmospheric transport device (not shown) of the atmospheric transport chamber 150 to use the transport arm to hold the substrate G placed on the loading part of the load lock chamber 130, and transfer the ashed substrate G It is transferred from the load lock chamber 130 to the atmospheric transfer chamber 150 . In addition, the control unit 160 controls the atmospheric transport device (not shown) to transport the unprocessed substrate G from the atmospheric transport chamber 150 to the load lock chamber 130 and place it on the load lock chamber 130 department. Then, the control unit 160 closes the gate valve GV7. Then, the control unit 160 switches the load lock chamber 130 from the atmospheric environment atmosphere to the vacuum environment atmosphere. In addition, the control unit 160 may not directly control the atmospheric transport device, but may separately provide an atmospheric transport control device that controls the atmospheric transport device. At this time, the control unit 160 sends a control request of the atmospheric transport device to the atmospheric transport control device, waits for the completion of the replacement of the substrate G by the atmospheric transport device, and then controls the transport device 140 to replace the substrate G.

Here, the substrate processing method of the substrate processing apparatus according to the reference example will be described using FIG. 4 . FIG. 4 is a diagram illustrating an example of the flow of the substrate processing method according to the reference example.

In the substrate processing method of the substrate processing apparatus according to the reference example shown in FIG. 4 , the operation of the processing chambers 121 to 124 (PM1 to PM4) is prioritized. That is, after the unprocessed substrate G is transported to the vacuum transfer chamber 110, if any of the processing chambers 121 to 124 (PM1 to PM4) is vacated, the etching process that has been completed will be replaced. The substrate G and the unprocessed substrate G start the etching process in the processing chamber.

On the other hand, the substrate G that has completed the etching process will wait in the vacuum transfer chamber 110 until the ashing process in the processing chamber 125 (PM5) is completed. In FIG. 4 , arrow 401 indicates that the etched substrate G is waiting in the vacuum transfer chamber 110 after being etched in the processing chamber 121 (PM1).

Here, as the etching gas for the etching process of the processing chambers 121 to 124 (PM1 to PM4), for example, chlorine (Cl)-containing gas is used. Therefore, by waiting in the vacuum transfer chamber 110 for the etched substrate G, the vacuum transfer chamber 110 is exposed to chlorine due to the chlorine-containing gas released from the etched substrate G. This corrodes the components in the vacuum transfer chamber 110 . For example, the transfer arms 141 and 142 are provided with pad members (not shown) that come into contact with the substrate G when the transfer arms 141 and 142 hold the substrate G. Exposure to chlorine in the vacuum transfer chamber 110 may cause corrosion of the pad components. Therefore, the maintenance cycle of the substrate processing apparatus becomes shorter, and there is a risk that the productivity of the substrate processing apparatus decreases.

On the other hand, in the substrate processing apparatus of this embodiment, the unprocessed substrate G is made to wait in the vacuum transfer chamber 110 (S102). In addition, after the substrate G on which the etching process has been completed is transported (S108) from the processing chamber 121 (PM1) to the vacuum transport chamber 110 (VTM), it is quickly transported from the vacuum transport chamber 110 (VTM) (S109). ) to processing chamber 125 (PM5). Thereby, exposure of the vacuum transfer chamber 110 to chlorine can be suppressed. Therefore, the maintenance cycle of the substrate processing apparatus can be extended and the productivity of the substrate processing apparatus can be improved.

The substrate processing apparatus has been described above. However, the present disclosure is not limited to the above-described embodiments and the like, and various modifications and improvements are possible within the scope of the gist of the present disclosure described in the patent claims. For example, although the case where the substrate G is a glass substrate has been described, it is not limited to this and may be another type of substrate such as a wafer. In addition, regarding the processing of the substrate G, the case where the processing gas is plasmaized and then processed has been described. However, the present invention is not limited to this. Plasma may not be used in either or both of the etching process and the ashing process. processing.

110: Vacuum transfer chamber (transfer chamber) 121~124: Processing chamber (1st processing chamber) 125: Processing chamber (2nd processing chamber) 130:Loading interlock chamber 140:Conveying device 141,142:Conveying arm 150:Atmospheric transport device 160:Control Department GV1~GV7: gate valve 301: Formal processing 302: Subsequent processing 303: End time of formal processing 304: End time point of ashing process 305: Replacement start time point G: Substrate

FIG. 1 is a schematic diagram showing an example of the structure of a substrate processing apparatus. FIG. 2 is a flow chart illustrating an example of a substrate processing method related to the present disclosure. FIG. 3 is a diagram illustrating an example of a flow of a substrate processing method related to the present disclosure. FIG. 4 is a diagram illustrating an example of the flow of the substrate processing method according to the reference example.

Claims (8)

A substrate processing method in a substrate processing device provided with a plurality of processing chambers for processing a substrate; The plurality of processing chambers include at least a first processing chamber that performs a first processing on the substrate and a second processing chamber that performs a second processing on the substrate; The substrate processing apparatus includes a transfer chamber, which is adjacent to the first processing chamber and the second processing chamber and has a transfer device capable of transferring the substrate; The substrate processing method has: The step of subjecting the first process to the substrate in the first processing chamber; The process of subjecting other substrates to the second process in the second processing chamber; After the step of applying the first treatment, the step of waiting for the substrate in the first processing chamber; After the first time has elapsed from the time when the second processing of the other substrate is completed, the transport device starts the process of transporting the substrate from the first processing chamber to the transport chamber; and After starting the process of unloading the substrate into the transport chamber, the substrate is transported to the second processing chamber by the transport device, and the substrate is replaced with the other substrate in the second processing chamber. For example, in the substrate processing method of item 1 of the patent application, the first time is the difference between the second time and the third time, and the second time is the third time performed after the second processing in the second processing chamber. The third time required for processing is shorter than the second time and is the time required for unloading the substrate from the first processing chamber. For example, in the substrate processing method of Item 2 of the patent application, the third treatment is a static elimination treatment of the substrate in the second treatment chamber. For example, if the substrate processing method of Item 2 or 3 of the patent scope is applied for, the third time includes replacing the unprocessed substrate that has been previously held in the transport device and has not been subjected to the first process and placing it in the first processing chamber. The time when the substrate is placed in the chamber and has been subjected to the first process. For example, the substrate processing method in item 1 of the patent scope applied for, wherein the first process is an etching process; This second treatment is an ashing treatment. A substrate processing method in a substrate processing device equipped with a plurality of processing chambers and processing a substrate; The plurality of processing chambers include at least a first processing chamber that performs a first processing on the substrate and a second processing chamber that performs a second processing and a third processing on the substrate; The substrate processing apparatus includes a transfer chamber, which is adjacent to the first processing chamber and the second processing chamber and has a transfer device capable of transferring the substrate; The substrate processing method has: The step of subjecting the first process to the substrate in the first processing chamber; performing the second process and the third process on other substrates in the second processing chamber; After the step of applying the first treatment, the step of waiting for the substrate in the first processing chamber; The time required for the second process is estimated based on past performance, the start time of the second process for the other substrates, the estimated time required for the second process, and the second time required for the third process. The replacement start time point is calculated based on the time and the third time required for unloading the substrate from the first processing chamber. After the replacement start time point passes, the transfer device starts to transfer the substrate from the first processing chamber. The process of moving the chamber to the transfer chamber; and After starting the process of unloading the substrate into the transport chamber, the substrate is transported to the second processing chamber by the transport device, and the substrate is replaced with the other substrate in the second processing chamber. A substrate processing device is provided with a plurality of processing chambers for processing substrates; The plurality of processing chambers include at least a first processing chamber that performs a first processing on the substrate and a second processing chamber that performs a second processing on the substrate; The substrate processing device is equipped with: The transfer chamber is adjacent to the first processing chamber and the second processing chamber and has a transfer device capable of transferring the substrate; and control department; The control unit is configured to control the following processes: The step of subjecting the first process to the substrate in the first processing chamber; The process of subjecting other substrates to the second process in the second processing chamber; After the step of applying the first treatment, the step of waiting for the substrate in the first processing chamber; After the first time has elapsed from the time when the second processing of the other substrate is completed, the transport device starts the process of transporting the substrate from the first processing chamber to the transport chamber; and After starting the process of unloading the substrate into the transport chamber, the substrate is transported to the second processing chamber by the transport device, and the substrate is replaced with the other substrate in the second processing chamber. For example, in the substrate processing device of Item 7 of the patent scope, the first processing chamber is an etching chamber in which the first processing is an etching process; The second processing chamber is an ashing chamber in which the second processing is ashing processing.