TW202338944A - 晶圓的加工方法 - Google Patents
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Abstract
[課題]提供一種晶圓的加工方法,其可解決起因於附著於元件晶片的側面之加工屑所導致之問題。[解決手段]晶圓的加工方法包含:分割起點形成步驟,其在分割預定線形成分割的起點;保護構件配設步驟,其配設保護晶圓的正面之保護構件;背面研削步驟,其研削晶圓的背面而完成所期望的厚度,且在分割預定線形成分割槽而將晶圓分割成元件晶片;薄片配設步驟,其在晶圓的背面配設能伸縮的薄片,且從晶圓的正面去除保護構件;黏著液被覆步驟,其將具有流動性之黏著液被覆於晶圓的正面;薄片伸縮步驟,其以使黏著液浸入分割槽且從分割槽排出黏著液之方式,使薄片伸縮;以及清洗步驟,其從晶圓的正面去除黏著液而清洗分割槽的側面。
Description
本發明關於一種晶圓的加工方法,其將在正面形成有藉由交叉之多條分割預定線所劃分之多個元件之晶圓分割成一個個元件晶片。
在正面形成有藉由交叉之多條分割預定線所劃分之IC、LSI等多個元件之晶圓係在背面被研削而形成為所期望的厚度後,藉由切割裝置、雷射加工裝置而被分割成一個個元件晶片,經分割之各元件晶片被利用於手機、個人電腦等電子設備。
並且,本案申請人已提出一種技術,其將對晶圓具有穿透性之波長的雷射光線的聚光點定位於與分割預定線對應之晶圓的內部並將雷射光線照射至晶圓,而形成成為分割的起點之改質層,之後,研削晶圓的背面而完成所期望的厚度,且將晶圓分割成一個個元件晶片(例如,參照專利文獻1)。
在專利文獻1所記載的技術中,因將雷射光線的聚光點定位於研削前的晶圓(亦即,較厚的晶圓)的內部,故有可在分割預定線的內部適當地形成改質層之優點。此外,若晶圓的厚度過薄,則變得難以將雷射光線的聚光點定位於與分割預定線對應之晶圓的內部,有時在與分割預定線對應之晶圓的內部會有未形成改質層之區域。
並且,在專利文獻1所記載的技術中,除了可將晶圓形成為所期望的厚度以外,更因在研削中從改質層到達正面之裂痕會伸長,並藉由劈開(cleavage)而將晶圓分割成一個個元件晶片,故亦有即使將晶圓進行減薄精加工亦可提高元件晶片的抗彎強度之優點。
[習知技術文獻]
[專利文獻]
[專利文獻1]日本特開2014-78569號公報
[發明所欲解決的課題]
但是,研削時所產生之加工屑有時會進入形成於分割預定線之分割槽,並附著於元件晶片的側面。在此種時候,有在後續步驟所實施之引線接合、晶粒接合、元件晶片的層積等中已從元件晶片的側面掉落、飛散之加工屑會妨礙接合且附著於元件晶片的正面而使所層積之元件晶片損傷的問題。
此種問題亦會發生在被稱為預分割之技術(例如,日本特開平11-40520號公報)中,所述預分割係將深度與元件晶片的完工厚度相當的槽作為分割的起點而形成於分割預定線,並研削晶圓的背面直至達到元件晶片的完工厚度,而將晶圓分割成一個個元件晶片。
因此,本發明之目的係提供一種晶圓的加工方法,其可解決起因於附著於元件晶片的側面之加工屑所導致之問題。
[解決課題的技術手段]
根據本發明,提供一種晶圓的加工方法,其將在正面形成有藉由交叉之多條分割預定線所劃分之多個元件之晶圓分割成一個個元件晶片,且具備:分割起點形成步驟,其在該分割預定線形成分割的起點;保護構件配設步驟,其在該分割起點形成步驟之前或之後配設保護該晶圓的正面之保護構件;背面研削步驟,其將該保護構件側保持於卡盤台並研削該晶圓的背面而完成所期望的厚度,且在該分割預定線形成分割槽而將該晶圓分割成一個個元件晶片;薄片配設步驟,其在該晶圓的背面配設能伸縮的薄片,且從該晶圓的正面去除該保護構件;黏著液被覆步驟,其將具有流動性之黏著液被覆於該晶圓的正面;薄片伸縮步驟,其以擴張該分割槽的寬度而使該黏著液浸入該分割槽且使該分割槽的寬度縮小而從該分割槽排出該黏著液之方式,使該薄片配設步驟所配設之該薄片伸縮;以及清洗步驟,其從該晶圓的正面去除該黏著液,至少清洗該分割槽的側面。
較佳為,在該分割起點形成步驟中,將對晶圓具有穿透性之波長的雷射光線的聚光點定位於與分割預定線對應之晶圓的內部,並對晶圓照射雷射光線,而形成成為分割的起點之改質層。
較佳為,在該分割起點形成步驟中,在分割預定線形成深度與元件晶片的完工厚度相當的槽以作為分割的起點。
該保護構件配設步驟可在該分割起點形成步驟之後實施。
較佳為,在該黏著液被覆步驟中使用之黏著液包含聚乙烯醇、聚環氧乙烷、聚丙烯醯胺、羧甲基纖維素、可溶酚醛樹脂型酚醛樹脂、羥甲基化尿素甲醛樹脂以及羥甲基化三聚氰胺樹脂之中的任一者,且在該清洗步驟中,供給清洗水而去除黏著液。
[發明功效]
若根據本發明的晶圓的加工方法,則在藉由具有流動性之黏著液而捕捉附著於元件晶片的側面之加工屑後,藉由清洗分割槽的側面,而可從元件晶片的側面將黏著液連同加工屑一起去除。因此,可解決起因於附著於元件晶片的側面之加工屑所導致之問題。
以下,針對本發明的晶圓的加工方法的較佳實施方式,一邊參照隨附圖式一邊進行說明。
圖1中表示藉由本發明的晶圓的加工方法而施以加工之圓板狀的晶圓2。晶圓2例如能由矽等適當的半導體材料所形成。晶圓2的正面2a係藉由網格狀的分割預定線4而被劃分成多個矩形區域,並在多個矩形區域的每一個中形成有IC、LSI等元件6。
(保護構件配設步驟)
在本實施方式中,首先,如同圖1所示,實施保護構件配設步驟,所述保護構件配設步驟係配設保護晶圓2的正面2a之保護構件8。作為保護構件8,可使用具有與晶圓2的直徑幾乎相同的直徑之圓形狀的黏著膠膜。然後,將保護構件8貼附並配設於晶圓2的正面2a。
(分割起點形成步驟)
在本實施方式中,在實施保護構件配設步驟之後,實施分割起點形成步驟,所述分割起點形成步驟係在分割預定線4形成分割的起點。
分割起點形成步驟例如可使用圖2(a)所示之雷射加工裝置10而實施。雷射加工裝置10具備:卡盤台12,其吸引保持晶圓2;雷射振盪器(未圖示),其射出對晶圓2具有穿透性之波長的脈衝雷射光線LB;聚光器14,其將雷射振盪器所射出之脈衝雷射光線LB進行聚光,並照射至被吸引保持於卡盤台12之晶圓2;以及攝像單元(未圖示),其拍攝被吸引保持於卡盤台12之晶圓2。
卡盤台12被構成為將在上下方向延伸之軸線作為中心而旋轉自如,且被構成為在圖2(a)中箭頭X所示之X軸方向以及與X軸方向正交之Y軸方向(圖2(a)中箭頭Y所示之方向)移動自如。此外,X軸方向及Y軸方向所界定之XY平面為實質上水平。
攝像單元包含:一般的攝像元件(CCD),其藉由可見光線而拍攝晶圓2;紅外線照射手段,其照射穿透晶圓2之紅外線;光學系統,其捕捉藉由紅外線照射手段所照射之紅外線;以及攝像元件(紅外線CCD),其輸出與被光學系統捕捉之紅外線對應之電訊號。
若參照圖2(a)繼續說明,則在分割起點形成步驟中,首先,將晶圓2的背面2b向上,並以卡盤台12的上表面吸引保持晶圓2。接下來,從攝像單元照射紅外線,藉由從晶圓2的背面2b穿透之紅外線而拍攝晶圓2的正面2a側,並基於由攝像單元所拍攝之晶圓2的影像,使在第一方向伸長之分割預定線4與X軸方向對齊。並且,使雷射光線LB對準已與X軸方向對齊之分割預定線4,並將雷射光線LB的聚光點定位於分割預定線4的內部。
接下來,一邊將卡盤台12在X軸方向進行加工進給,一邊從聚光器14將對晶圓2具有穿透性之波長的雷射光線LB照射至晶圓2,如同圖2(a)及圖2(b)所示,沿著分割預定線4在晶圓2的內部形成成為分割的起點之改質層16。此外,由防止元件晶片的抗彎強度的降低之觀點而言,較佳為在後述之背面研削步驟中,在研削晶圓2的背面2b時,在能去除的深度形成改質層16。
接下來,僅以分割預定線4在Y軸方向的間隔量,相對於聚光器14將卡盤台12在Y軸方向進行分度進給。然後,藉由交替地重覆進行雷射光線LB的照射與分度進給,而沿著所有在第一方向伸長之分割預定線4,在晶圓2的內部形成改質層16。
然後,使卡盤台12旋轉90度後,藉由交替地重覆進行雷射光線LB的照射與分度進給,而沿著與先前已形成改質層16之分割預定線4正交之所有在第二方向伸長之分割預定線4,在晶圓2的內部形成改質層16。如此進行而實施分割起點形成步驟,如圖2(c)所示,沿著網格狀的分割預定線4,在晶圓2的內部形成網格狀的改質層16。
此種分割起點形成步驟例如可利用以下的加工條件實施。
脈衝雷射光線的波長 :1342nm
平均輸出 :1.0W
重複頻率 :90kHz
進給速度 :700mm/s
此外,在上述的說明中,雖從晶圓2的背面2b側照射雷射光線LB而形成改質層16,但亦可從晶圓2的正面2a側照射雷射光線LB而形成改質層16,在此情形中,在分割起點形成步驟之後實施保護構件配設步驟。
在本實施方式中,雖已說明形成改質層16作為分割的起點之例子,但亦可沿著分割預定線4在晶圓2的正面2a側形成深度與元件晶片的完工厚度相當的槽以作為分割的起點。此種槽可藉由由照射雷射光線所進行之燒蝕加工或使用切割裝置之切割加工而形成。
(燒蝕加工)
若參照圖3進行說明,則在燒蝕加工的情形中,在將保護構件8配設於晶圓2的正面2a之前,將正面2a向上並以卡盤台12吸引保持晶圓2。接下來,使在第一方向伸長之分割預定線4與X軸方向對齊,並使對晶圓2具有吸收性之波長的雷射光線LB’對準分割預定線4。並且,將雷射光線LB’的聚光點定位於正面2a。
然後,一邊將卡盤台12在X軸方向進行加工進給,一邊將雷射光線LB’照射至晶圓2,藉此可沿著分割預定線4在正面2a形成深度與元件晶片的完工厚度相當的雷射加工槽18。此外,與形成改質層16之情形同樣地,交替地重覆進行雷射光線LB’的照射與分度進給,而沿著網格狀的分割預定線4,在正面2a形成網格狀的雷射加工槽18。
將分割的起點設為雷射加工槽18之情形,例如可利用以下的加工條件實施分割起點形成步驟。
雷射光線的波長 :355nm
平均輸出 :2.0W
重複頻率 :80kHz
進給速度 :300mm/s
(切割加工)
在藉由切割加工而形成槽之情形中,例如可使用圖4所示之切割裝置20而實施。切割裝置20具備:卡盤台22,其吸引保持晶圓2;以及切割單元24,其切割被吸引保持於卡盤台22之晶圓2。切割單元24包含:主軸26,其被構成為將Y軸作為軸心而旋轉自如;以及環狀的切割刀片28,其被固定於主軸26的前端。
在切割加工之情形中,亦在將保護構件8配設於晶圓2的正面2a之前,將正面2a向上並以卡盤台22的上表面吸引保持晶圓2。接下來,使高速旋轉之切割刀片28的刀鋒從正面2a切入已與X軸方向對齊之分割預定線4直至與元件晶片的完工厚度相當之深度為止,且一邊將切割水供給至使切割刀片28的刀鋒切入之部分,一邊將卡盤台22在X軸方向進行加工進給。
藉此,可沿著分割預定線4形成深度與元件晶片的完工厚度相當的切割槽30。進行切割加工之情形中,亦交替地重覆進行切割槽30的形成與分度進給,而沿著網格狀的分割預定線4,在正面2a形成網格狀的切割槽30。
在將分割的起點設為切割槽30之情形中,例如可利用以下的加工條件實施分割起點形成步驟。
切割刀片的直徑 :ϕ50mm
切割刀片的旋轉速度 :30,000rpm
切割水的供應量 :2公升/分鐘
進給速度 :50mm/s
因作為分割的起點之槽18、30形成於晶圓2的正面2a側,故形成槽18、30作為分割的起點之情形,如同圖5(a)及圖5(b)所示,在實施分割起點形成步驟之後實施保護構件配設步驟。
(背面研削步驟)
若已實施保護構件配設步驟及分割起點形成步驟,則實施背面研削步驟,所述背面研削步驟係將保護構件8側保持於卡盤台並研削晶圓2的背面2b而完成所期望的厚度,且在分割預定線4形成分割槽而將晶圓2分割成一個個元件晶片。
背面研削步驟例如可使用圖6(a)所示之研削裝置32而實施。研削裝置32具備:卡盤台34,其吸引保持晶圓2;以及研削單元36,其研削被吸引保持於卡盤台34之晶圓2。
研削單元36包含:主軸38,其在上下方向延伸;以及圓板狀的輪安裝件40,其被固定於主軸38的下端。在輪安裝件40的下表面藉由螺栓42而緊固有環狀的研削輪44。在研削輪44的下表面的外周緣部固定有多個研削磨石46,所述多個研削磨石46係在圓周方向隔著間隔被配置成環狀。
在背面研削步驟中,首先,將晶圓2的背面2b向上,並以卡盤台34的上表面吸引保持晶圓2。接下來,使主軸38以預定的旋轉速度(例如6000rpm)往圖6(a)中箭頭R1所示之方向旋轉。並且,使卡盤台34以預定的旋轉速度(例如300rpm)往箭頭R2所示之方向旋轉。
接下來,使主軸38下降而使研削磨石46接觸晶圓2的背面2b,且將研削水供給至使研削磨石46接觸背面2b之部分。之後,藉由使主軸38以預定的研削進給速度(例如1.0μm/s)下降而研削晶圓2的背面2b,將晶圓2薄化至元件晶片的完工厚度為止。
在形成改質層16作為分割的起點之情形中,藉由研削晶圓2時作用之推抵力,而裂痕會從改質層16往晶圓2的厚度方向伸長,如圖6(b)所示,晶圓2被分割成一個個元件晶片50。並且,因藉由從改質層16伸長之裂痕而形成分割槽48(從正面2a到達背面2b之槽),故元件晶片50的側面成為劈開面。
另一方面,針對形成雷射加工槽18或切割槽30作為分割的起點之情形,因此等槽18、30的深度為與元件晶片50的完工厚度相當之深度,故藉由研削晶圓2的背面2b直至達到上述厚度為止,而槽18、30會在晶圓2的背面2b出現並構成分割槽48。藉此,晶圓2被分割成一個個元件晶片50。
(薄片配設步驟)
在實施背面研削步驟之後,實施薄片配設步驟,所述薄片配設步驟係在晶圓2的背面2b配設能伸縮的薄片,且從晶圓2的正面2a去除保護構件8。
在薄片配設步驟中,如圖7(a)所示,將晶圓2配設於圓形的薄片54,所述薄片54的周緣被固定於環狀的框架52。可使用能伸縮的黏著膠膜(例如,氯乙烯製的黏著膠膜)作為薄片54。在此情形中,只要將晶圓2的背面2b貼附於薄片54的黏著面即可。並且,若已將薄片54配設於背面2b,則如同圖7(b)所示,從正面2a去除保護構件8。
(黏著液被覆步驟)
在實施薄片配設步驟之後,實施黏著液被覆步驟,所述黏著液被覆步驟係將具有流動性之黏著液被覆於晶圓2的正面2a。
若參照圖8(a)進行說明,則在黏著液被覆步驟中,將晶圓2的正面2a向上,並將具有流動性之黏著液56滴下至正面2a的中心部。為了在後述之清洗步驟中可容易地從晶圓2去除黏著液56,較佳為使用水溶性樹脂作為黏著液56。就能利用作為黏著液56之水溶性樹脂而言,可列舉例如聚乙烯醇、聚環氧乙烷、聚丙烯醯胺、羧甲基纖維素、可溶酚醛樹脂型酚醛樹脂、羥甲基化尿素甲醛樹脂或羥甲基化三聚氰胺樹脂。
若已將黏著液56滴下至晶圓2的正面2a的中心部,則使晶圓2往箭頭R3所示之方向旋轉,藉由離心力而使黏著液56流動。藉此,如圖8(b)所示,可將黏著液56以幾乎均勻的厚度被覆於正面2a。
(薄片伸縮步驟)
在實施黏著液被覆步驟之後,實施薄片伸縮步驟,所述薄片伸縮步驟係以擴張分割槽48的寬度而使黏著液56浸入分割槽48且使分割槽48的寬度縮小而從分割槽48排出黏著液56之方式,使薄片配設步驟所配設之薄片54伸縮。
薄片伸縮步驟例如可使用圖9所示之伸縮裝置58而實施。伸縮裝置58包含:圓筒狀的鼓輪60;環狀的保持構件62,其被配置於鼓輪60的外周;以及多個氣缸64,其等使保持構件62升降。在保持構件62的外周緣,在圓周方向隔著間隔而配置有多個夾具66。
在薄片伸縮步驟中,首先,將已形成分割槽48之晶圓2向上,並將框架52載於保持構件62的上表面。接下來,以多個夾具66固定框架52。接下來,藉由多個氣缸64而使保持構件62下降,使放射狀張力作用於薄片54。如此一來,如同圖9所示之二點鏈線,因分割槽48的寬度擴張,故黏著液56浸入分割槽48。
接下來,藉由多個氣缸64而使保持構件62上升,將作用於薄片54之放射狀張力解除,使分割槽48的寬度縮小,而從分割槽48排出黏著液56。如此進行,多次進行分割槽48的寬度的擴張、縮小,重覆進行黏著液56往分割槽48浸入與從分割槽48排出黏著液56,藉此可藉由黏著液56而捕捉附著於元件晶片50的側面之加工屑。
(清洗步驟)
在實施薄片伸縮步驟之後,實施清洗步驟,所述清洗步驟係從晶圓2的正面2a去除黏著液56而至少清洗分割槽48的側面。
在清洗步驟中,如同圖10所示,在藉由伸縮裝置58而擴張分割槽48的寬度之狀態下,從上方朝向晶圓2(元件晶片50)供給清洗水68。藉此,可從元件晶片50的正面及側面將黏著液56連同加工屑一起去除。
如同上述,在本實施方式的晶圓的加工方法中,在藉由具有流動性之黏著液56而捕捉附著於元件晶片50的側面之加工屑後,藉由清洗分割槽48的側面,而可從元件晶片50的側面將黏著液56連同加工屑一起去除。
因此,可解決在後續步驟所實施之引線接合、晶粒接合、元件晶片50的層積等中已從元件晶片50的側面掉落、飛散之加工屑會妨礙接合且附著於元件晶片50的正面而使所層積之元件晶片50損傷的問題。
2:晶圓
2a:晶圓的正面
2b:晶圓的背面
4:分割預定線
6:元件
8:保護構件
16:改質層(分割的起點)
18:雷射加工槽(分割的起點)
30:切割槽(分割的起點)
48:分割槽
50:元件晶片
54:薄片
56:黏著液
68:清洗水
圖1係表示保護構件配設步驟之立體圖。
圖2(a)係在分割起點形成步驟中形成改質層之情形的立體圖,圖2(b)係沿著分割預定線形成有改質層之晶圓的剖面圖,圖2(c)係沿著分割預定線形成有改質層之晶圓的立體圖。
圖3係在分割起點形成步驟中藉由燒蝕加工而形成深度與元件晶片的完工厚度相當的槽之情形的立體圖。
圖4係在分割起點形成步驟中藉由切割加工而形成深度與元件晶片的完工厚度相當的槽之情形的立體圖。
圖5(a)係表示在沿著分割預定線形成有深度與元件晶片的完工厚度相當的槽之晶圓的正面配設保護構件之狀態之立體圖,圖5(b)係表示在圖5(a)所示之晶圓的正面配設有保護構件之狀態之剖面圖。
圖6(a)係表示背面研削步驟之立體圖,圖6(b)係已形成分割槽之晶圓的立體圖。
圖7(a)係表示在薄片配設步驟中在晶圓的背面配設能伸縮的薄片之狀態之立體圖,圖7(b)係表示在薄片配設步驟中從晶圓的正面去除保護構件之狀態之立體圖。
圖8(a)係表示黏著液被覆步驟之立體圖,圖8(b)係已被覆黏著液之晶圓的剖面圖。
圖9係表示薄片伸縮步驟之剖面圖。
圖10係表示清洗步驟之剖面圖。
2:晶圓
50:元件晶片
52:框架
54:薄片
56:黏著液
58:伸縮裝置
60:鼓輪
62:保持構件
64:氣缸
66:夾具
Claims (5)
- 一種晶圓的加工方法,其將在正面形成有藉由交叉之多條分割預定線所劃分之多個元件之晶圓分割成一個個元件晶片,且具備: 分割起點形成步驟,其在該分割預定線形成分割的起點; 保護構件配設步驟,其在該分割起點形成步驟之前或之後配設保護該晶圓的正面之保護構件; 背面研削步驟,其將該保護構件側保持於卡盤台並研削該晶圓的背面而完成所期望的厚度,且在該分割預定線形成分割槽而將該晶圓分割成一個個元件晶片; 薄片配設步驟,其在該晶圓的背面配設能伸縮的薄片,且從該晶圓的正面去除該保護構件; 黏著液被覆步驟,其將具有流動性之黏著液被覆於該晶圓的正面; 薄片伸縮步驟,其以擴張該分割槽的寬度而使該黏著液浸入該分割槽且使該分割槽的寬度縮小而從該分割槽排出該黏著液之方式,使該薄片配設步驟所配設之該薄片伸縮;以及 清洗步驟,其從該晶圓的正面去除該黏著液,至少清洗該分割槽的側面。
- 如請求項1之晶圓的加工方法,其中,在該分割起點形成步驟中,將對該晶圓具有穿透性之波長的雷射光線的聚光點定位於與該分割預定線對應之該晶圓的內部,並對該晶圓照射雷射光線,而形成成為分割的起點之改質層。
- 如請求項1之晶圓的加工方法,其中,在該分割起點形成步驟中,在該分割預定線形成深度與該元件晶片的完工厚度相當的槽以作為分割的起點。
- 如請求項3之晶圓的加工方法,其中,該保護構件配設步驟係在該分割起點形成步驟之後實施。
- 如請求項1之晶圓的加工方法,其中,在該黏著液被覆步驟中使用之該黏著液係選自由聚乙烯醇、聚環氧乙烷、聚丙烯醯胺、羧甲基纖維素、可溶酚醛樹脂型酚醛樹脂、羥甲基化尿素甲醛樹脂以及羥甲基化三聚氰胺樹脂所組成之群組,且在該清洗步驟中,供給清洗水而去除該黏著液。
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