TW202338151A - Component pre-heating treatment method and substrate treatment apparatus - Google Patents

Abstract

To provide a technology capable of enhancing uniformity of a treatment for a substrate by properly pre-heating a component arranged on a stage. A component pre-heating treatment method pre-heats a component that can come into contact with and move relative to a stage on which a substrate is mounted of a substrate treatment apparatus. The component pre-heating treatment method includes the steps of: positioning the component at a pre-heating position where the component is not in contact with the stage, and pre-heating the component by radiation heat from the stage; and bringing the component pre-heated at the step of pre-heating the component into contact with the stage. Thus, a uniformity of a treatment for the substrate can be enhanced by properly pre-heating the component.

Description

Parts preheating treatment method and substrate processing device

The present disclosure relates to a component preheating treatment method and a substrate processing device.

Patent Document 1 discloses a substrate heating device (substrate processing device) that heats the upper and lower surfaces of the substrate in a state of floating from the substrate before placing the substrate on a substrate carrying table (pedestal), thereby suppressing the Deformation caused by thermal strain.

In order to suppress film formation at the periphery of the substrate, a film forming apparatus, which is a type of substrate processing apparatus, sometimes arranges a frame-shaped component (frame member) at the periphery of the substrate. The frame member is configured to be relatively movable relative to the pedestal, and will contact the pedestal and cover the periphery of the substrate when the substrate is processed.

[Prior technical literature] [Patent Document] Patent Document 1: Japanese Patent Application Laid-Open No. 5-160046

The present disclosure provides a technology that can appropriately preheat parts arranged on a pedestal to improve the uniformity of substrate processing.

According to one aspect of the present disclosure, a preheating treatment method for parts is provided, which is a preheating treatment method for parts that are contactable and relatively movable with respect to a pedestal for placing a substrate in a substrate processing device; the method has the following steps: The part is positioned in a non-contact preheating position relative to the pedestal, and the part is preheated by radiant heat from the pedestal; and the part is preheated by the process of preheating the part The process of contacting the pedestal.

According to this method, the parts arranged on the pedestal can be appropriately preheated to improve the uniformity of processing of the substrate.

Hereinafter, modes for implementing the present disclosure will be described with reference to the drawings. In each drawing, the same components may be assigned the same symbols, and repeated explanations may be omitted.

FIG. 1 is a cross-sectional view illustrating an example of a substrate processing apparatus 1 according to an embodiment. As shown in FIG. 1 , a substrate processing apparatus 1 according to one embodiment is an inductively coupled plasma (ICP) processing apparatus that performs various substrate processes on an FPD substrate (hereinafter referred to as a substrate W).

Examples of FPDs that have undergone substrate processing include Liquid Crystal Display (LCD), Electro Luminescence (EL), Plasma Display Panel (PDP), etc. In this case, glass, synthetic resin, or the like is used as the material of the substrate W. The substrate W may include a substrate with circuits patterned on the surface, or a support substrate without circuits, etc. The planar size of the substrate W can be in the range of about 1800mm to 3400mm on the long side and in the range of about 1500mm to 3000mm on the short side. In addition, the thickness of the substrate W may be in the range of approximately 0.2 mm to 4.0 mm. Examples of substrate processing performed by the substrate processing apparatus 1 include film formation processing using a CVD (Chemical Vapor Deposition) method or etching processing. The substrate processing apparatus 1 for performing film formation processing will be described below.

The substrate processing apparatus 1 has a rectangular parallelepiped box-shaped processing container 10 . The processing container 10 is made of metal such as aluminum or aluminum alloy. In addition, the processing container 10 can be formed into an appropriate shape corresponding to the shape of the substrate W. For example, when the substrate W is a circular plate or an elliptical plate, the processing container 10 is preferably formed into a cylindrical shape or an elliptical cylindrical shape.

The processing container 10 has a square support frame 11 protruding to the inside of the processing container 10 at a specific position in the vertical direction. The dielectric plate 12 is supported in the horizontal direction by the support frame 11 . The processing container 10 is divided into an upper chamber 13 and a lower chamber 14 with the dielectric plate 12 interposed therebetween. The upper chamber 13 has an antenna chamber 13a formed inside. The lower chamber 14 holds the substrate W and has a processing space 14a formed inside for substrate processing.

The side wall 15 of the lower chamber 14 has a carry-out inlet 17 that is opened and closed by a gate valve 16 . In the substrate processing apparatus 1, when the gate valve 16 is opened, the substrate W is loaded in and out via the transfer device (not shown) through the transfer inlet 17.

In addition, the side wall 15 of the lower chamber 14 is grounded (connected to the ground potential) through the ground wire 18 . The square side walls 15 of the lower chamber 14 have an endless surrounding sealing groove 19 at the upper end. By disposing the sealing component 20 such as an O-ring in the sealing groove 19, the support frame 11 and the lower chamber 14 hermetically seal the processing space 14a.

The support frame 11 is made of metal such as aluminum or aluminum alloy. In addition, the dielectric plate 12 is formed of ceramics such as alumina (Al ₂ O ₃ ) or quartz.

The inner side of the support frame 11 is provided with a shower head 21 connected to the support frame 11 and ejecting gas into the processing space 14a. The dielectric plate 12 is supported above the shower head 21 . The shower head 21 is made of metal such as aluminum, and is preferably surface treated by anodizing. A gas flow path 21a is formed in the interior of the shower head 21 along the horizontal direction. In addition, the shower head 21 has a plurality of gas ejection holes 21b that communicate with the gas flow path 21a and the lower surface of the shower head 21 (processing space 14a).

A gas introduction pipe 22 connected to the gas flow channel 21a is connected to the upper surface of the shower head 21. The gas introduction pipe 22 extends upward in the upper chamber 13 and passes through the upper chamber 13 airtightly, and is then connected to the gas supply part 23 provided outside the processing container 10 .

The gas supply part 23 has a gas supply pipe 24 coupled to the gas introduction pipe 22, and has a gas supply source 25, a mass flow controller 26 and an on-off valve 27 in order from upstream to downstream of the gas supply pipe 24. During substrate processing, gas is supplied from the gas supply source 25 , the flow rate is controlled by the mass flow controller 26 , and the supply timing is controlled by the opening and closing valve 27 . The gas flows from the gas supply pipe 24 through the gas introduction pipe 22 into the gas flow channel 21a, and is sprayed out to the processing space 14a through each gas discharge hole 21b.

A high-frequency antenna 28 is provided inside the chamber 13 forming the antenna chamber 13a. The high-frequency antenna 28 is formed by arranging antenna lines made of conductive metal such as copper in a loop or spiral shape. Alternatively, the high-frequency antenna 28 may be an antenna provided with multiple loop antenna lines. The terminal of the high-frequency antenna 28 is connected to a power supply component 29 extending upward in the upper chamber 13 .

The power supply assembly 29 has an upper end protruding to the outside of the processing container 10 , and the power supply line 30 is connected to the upper end. The power supply line 30 is connected to the high-frequency power supply 32 through a matching device 31 that performs impedance matching. The high-frequency power supply 32 applies high-frequency electric power corresponding to the frequency of substrate processing (for example, 13.56 MHz) to the high-frequency antenna 28 . Thereby, the high-frequency antenna 28 will form an induced electric field in the lower chamber 14 . The substrate processing apparatus 1 uses the induced electric field formed in the lower chamber 14 to plasmaize the gas supplied from the shower head 21 to the processing space 14a, and provides precursors in the plasma to the substrate W.

In addition, a plurality of exhaust ports 33a are formed on the bottom wall 33 of the lower chamber 14, and each exhaust port 33a is provided with a gas exhaust portion 34. The exhaust part 34 has a gas exhaust pipe 35, and the gas exhaust pipe 35 is provided with an exhaust mechanism 37. The exhaust mechanism 37 is provided with an on-off valve 36 and a vacuum pump 38 in order from the upstream to the downstream of the gas exhaust pipe 35 . The vacuum pump 38 may use a turbomolecular pump or the like, and will evacuate the lower chamber 14 to a preset vacuum degree during substrate processing.

The processing container 10 is provided with a pedestal 40 (mounting table) in the lower chamber 14 on which the substrate W carried in from the carry-out port 17 is placed.

The pedestal 40 has a pedestal body 41, an insulating component 42, a plurality of lifting pins 43, and a plurality of lifting pin lifting mechanisms 44. The substrate W carried into the lower chamber 14 is transferred to each lift pin 43 raised by each lift pin lifting mechanism 44, and is placed on the pedestal body by lowering each lift pin 43. 41 on.

The pedestal body 41 is formed into a mounting surface 411 that is rectangular in plan view and has approximately the same plane size as the substrate W. For example, the planar size of the mounting surface 411 may be in the range of about 1800mm to 3400mm on the long side, and in the range of about 1500mm to 3000mm on the short side. The pedestal body 41 has a step surface 412 that is lower than the placement surface 411 on the outside of the placement surface 411 . The stepped surface 412 surrounds the entire outer edge of the pedestal body 41 to support the frame member 50 described below. Furthermore, the pedestal body 41 has a side peripheral surface 413 substantially parallel to the vertical direction between the mounting surface 411 and the step surface 412 .

The pedestal body 41 is made of aluminum or aluminum alloy, and has a heating wire 45 as an impedance body inside. The heating wire 45 is arranged so that the entire mounting surface 411 can be heated uniformly. In addition, the heating wire 45 is preferably also provided at a position below the step surface 412 so that the temperature of the step surface 412 becomes the same as the temperature of the placement surface 411 . The heating wire 45 is formed of tungsten, molybdenum, nickel or chromium, or a compound of any of these metals and aluminum oxide, titanium or the like.

The heating wire 45 is connected to the heater driving part 46 and will rise in temperature in response to the power supply from the heater driving part 46 . The heater driving unit 46 is connected to the control unit 70 of the substrate processing apparatus 1 and outputs power corresponding to the temperature command of the control unit 70 . For example, when performing substrate processing (film formation processing), the substrate processing apparatus 1 heats the mounting surface 411 of the pedestal 40 to approximately 300° C. and maintains this temperature state. Through the pedestal body 41, the substrate W placed on the placement surface 411 will also be heated to 300°C. In addition, the substrate processing apparatus 1 may also have a meandering flow channel (not shown) inside the pedestal body 41 instead of the heating wire 45 and allow the temperature control medium to flow through the flow channel, thereby performing temperature control including heating and cooling. .

The pedestal body 41 is provided with a temperature sensor 47 such as a thermocouple. The temperature sensor 47 transmits the measured temperature of the pedestal body 41 to the control unit 70 at any time. The control unit 70 will adjust the temperature of the pedestal body 41 to the target temperature based on the transmitted measured temperature.

The insulating component 42 is formed of insulating material and is disposed at multiple locations on the bottom wall 33 of the lower chamber 14 . The insulating component 42 fixes and supports the pedestal body 41 in a state in which the pedestal body 41 floats slightly relative to the bottom wall 33 .

Then, the substrate processing apparatus 1 is equipped with a frame member 50 around the pedestal 40 that can contact the pedestal 40 and be relatively movable, and the frame member 50 is positioned in the vertical direction (height direction) relative to the pedestal 40 The lifting part 60 of the lifting frame member. 2 is a diagram illustrating the pedestal 40 and the frame member 50 of the substrate processing apparatus 1. (a) is a perspective view, and (b) is a cross-sectional view showing a state where the frame member 50 is in contact with the step surface 412 of the pedestal 40.

As shown in FIG. 2 , the frame member 50 is a component that covers the upper side of the peripheral edge wp of the substrate W in a non-contact manner to prevent the precursor film from forming on the peripheral edge wp of the substrate W, the precursor from being wound toward the inner surface of the substrate W, and the like. The frame member 50 is also called a shield ring. The frame member 50 is formed in a rectangular shape that overlaps the step surface 412 of the base 40 when viewed from above. In addition, the frame member 50 only needs to be formed into an appropriate shape corresponding to the outer shape of the substrate W, and may be square, circular, or the like.

The frame member 50 is preferably made of aluminum or its alloy, ceramics such as alumina, glass, etc., and among them, it is preferably made of aluminum or its alloy that is as lightweight as possible and has elasticity (flexibility) and rigidity. good. In the case of aluminum or its alloy, in order to prevent corrosion or improve plasma resistance, it is preferable to subject the frame member 50 to an acid-proof aluminum treatment or to have a flame spray coating such as yttrium oxide.

The frame member 50 has an outer peripheral portion 51 surrounding the frame, and an eaves portion 52 protruding from the upper portion of the inner side 512 of the outer peripheral portion 51 to the inner side. Furthermore, the frame member 50 is provided with a reinforcing portion 53 on the eaves 52 at the corners where the long sides and the short sides meet to reinforce the connection between the eaves 52 . In this embodiment, the outer peripheral portion 51 and the eaves portion 52 are integrally formed from the same material. In addition, the outer peripheral portion 51 and the eaves portion 52 may be formed of different materials, and the frame member 50 may also be configured without the reinforcing portion 53 .

As shown in FIG. 2( b ), when the outer peripheral part 51 moves downward from the state in FIG. 1 by the frame member lifting part 60 , it comes into contact with the step surface 412 of the pedestal body 41 and is supported on the step surface 412 . In a state where the outer peripheral portion 51 is supported by the stepped surface 412, the eaves portion 52 is disposed at a position farther above the substrate W placed on the mounting surface 411 (non-contact with the substrate W). The eaves portion 52 extends over the entire outer circumference of the substrate W in the vertical direction and overlaps the peripheral edge wp of the substrate W, thereby blocking film formation on the peripheral edge wp of the substrate W.

The thickness T1 of the outer peripheral portion 51 is thicker than the distance D between the mounting surface 411 and the step surface 412 of the pedestal body 41 . Although the thickness T1 of the main body portion varies depending on the size of the frame member 50 (substrate W), for example, when the long side of the frame member 50 is 3000 mm or more, it is preferably set to 20 mm or more. Thereby, the rigidity of the frame member 50 can be improved, and the frame member 50 can be linearly supported by the frame member lifting part 60 .

In order to bring the lower surface 511 of the outer peripheral portion 51 into surface contact with the step surface 412, it is formed into a flat shape. The inner side surface 512 of the outer peripheral portion 51 faces the side peripheral surface 413 between the placement surface 411 and the step surface 412 without contacting it when supported by the step surface 412 . On the contrary, when supported by the step surface 412 , the outer surface 513 of the outer peripheral portion 51 protrudes further outward in the horizontal direction than the step surface 412 . The frame member lifting portion 60 supports the lower surface 511 of the protruding portion of the outer peripheral portion 51 . In addition, the upper surface 514 of the outer peripheral portion 51 is formed in a flat shape along the horizontal direction, and is smoothly continuous with the upper surface of the eaves portion 52 at the interface with the inner surface 512 .

The eaves portion 52 is formed very thin relative to the thickness T1 of the outer peripheral portion 51 and protrudes briefly toward the inside of the frame member 50 from the outer peripheral portion 51 . The ratio of the thickness T2 of the eaves portion 52 (thickness of the root portion connected to the outer peripheral portion 51) to the thickness T1 of the outer peripheral portion 51 may be, for example, in the range of about 1/10 to 1/3. In addition, although the protrusion amount of the eaves portion 52 relative to the outer peripheral portion 51 varies depending on the relative distance between the mounting surface 411 and the outer peripheral portion 51, it is preferably set to a range of about 20 mm to 50 mm, for example.

The inner edge 523 side of the upper surface 521 of the eaves 52 is an inclined surface that gradually inclines downward in the horizontal direction when the frame member 50 is arranged on the step surface 412 . On the other hand, the lower surface 522 of the eaves 52 is formed into a flat shape along the horizontal direction from the inner side 512 of the outer peripheral portion 51 to the inner edge 523 when the frame member 50 is arranged on the step surface 412 . When the lower surface 522 of the eaves 52 is supported by the stepped surface 412 , the lower surface 522 of the eaves 52 has a clearance corresponding to the thickness of the substrate W plus a specific margin height relative to the mounting surface 411 . )C separation. The clearance C can be set to about 0.3mm~5mm, for example. In this way, by having the clearance C (non-contact) and covering the peripheral edge wp of the substrate W with the eaves 52 , the frame member 50 can prevent the eaves 52 from interfering with the substrate W, and at the same time effectively suppress the precursors from moving toward the substrate. The circumference of W is wp.

Returning to FIG. 1 , the frame member lifting part 60 is equipped with a plurality of unit lifting mechanisms 61 that support the lower surface of the outer peripheral part 51 of the frame member 50 . Under the control of the control part 70 , each unit lifting mechanism 61 is interlocked and operated. . Thereby, the frame member elevating part 60 raises and lowers the frame member 50 in the vertical direction (height direction) while supporting the frame member 50 in the horizontal direction. For example, since the frame member lifting portion 60 will support two locations at a specific distance on one long side of the frame member 50 and two locations at a specific distance on the other long side of the frame member 50, there are four in total. Unit lifting mechanism 61.

Each unit lifting mechanism 61 has a pillar 62 (movable part) that is detachably contacted with the frame member 50, a guide tube 63 that guides the raising and lowering of the pillar 62, and a mechanism body 64 that raises and lowers the pillar 62.

The support plate 62 has a support plate 65 at its upper end that contacts the lower surface of the outer peripheral portion 51 of the frame member 50 . The support plate 65 is formed into a flat disk shape with an upper surface that comes into contact with the frame member 50 . The mechanism body 64 moves the support plate 65 to a position higher than the mounting surface 411 and close to the upper limit position of the sprinkler head 21 (moving in and out standby position) and lower than the step surface 412 and close to the lower limit position (reference position) of the bottom wall 33 Do lifts and falls in between. When the support plate 65 is displaced to a position higher than the step surface 412, it will support the outer peripheral portion 51 of the frame member 50. On the other hand, when it is displaced to a position lower than the step surface 412, it will no longer be supported on the step surface 412. The frame member 50 is separated. The guide tube 63 is fixed to the opening 33b provided in the bottom wall 33, and guides the lifting and lowering of the pillar 62 on the inner wall on the axis side.

The mechanism body 64 can use various mechanisms (cylinder mechanism, ball screw mechanism, mechanism composed of a motor and a rack, etc.) that can move the pillar 62 up and down. For example, when a cylinder mechanism is used as the mechanism body 64, a hydraulic cylinder or a pneumatic cylinder is used to slide the rod (ie, the pillar 62). When a ball screw mechanism is used as the mechanism body 64, the ball screw is rotated by driving the motor and the pillar 62 connected to the nut provided on the ball screw is slid. When a mechanism composed of a motor and a rack is used as the mechanism body 64, the pillar 62 composed of a rack is driven by the motor to slide.

The frame member lifting part 60 is electrically connected to each mechanism body 64 and the power distribution drive part 66. The power distribution drive unit 66 supplies power pulses corresponding to the command signals from the control unit 70 to each mechanism body 64, thereby causing each mechanism body 64 to move (interlock). In addition, the power distribution drive unit 66 recognizes the height position of the frame member 50 (each support plate 65) by monitoring the power pulse supplied to each mechanism body 64, and moves the frame member 50 to the target position based on the recognition result.

The control unit 70 of the substrate processing apparatus 1 is a control computer including one or more processors 71, a memory 72, an input/output interface, and an electronic circuit (not shown). In addition, the control unit 70 is a user equipped with an input device such as a keyboard or a mouse for inputting instructions, a display device such as a display for visually displaying the operating status of the substrate processing apparatus 1, and an output device such as a printer. Interface (neither pictured).

The control unit 70 controls each component of the substrate processing apparatus 1 (for example, the high-frequency power supply 32, the gas supply unit 23, the exhaust unit 34, the lift pin lifting mechanism 44, the heater driving unit 46, the frame member lifting unit 60, etc.) actions to perform substrate processing. The one or more processors 71 are one or a plurality of processors that combine a CPU, an ASIC, an FPGA, a circuit composed of a plurality of discrete semiconductors, and the like. The memory 72 includes a non-volatile memory and a volatile memory and forms a memory portion of the control unit 70 . In addition, a part of the memory 72 may be built into more than one processor 71 .

The processor 71 will perform preset processing according to the programs and recipes (process recipes) stored in the memory 72 . The recipe sets the control content of the process conditions of the substrate processing apparatus 1. The control content includes, for example, the gas flow rate or the pressure in the processing container 10 , the temperature in the processing container 10 or the temperature of the pedestal body 41 , process time, etc. In addition, the recipe and the like may be installed in the control unit 70 and read in a state of being stored in a storage medium readable by a computer such as a CD-ROM, DVD, or memory card.

FIG. 3 is a cross-sectional view showing a state in which the frame member 50 is arranged in the preheating position HP. Hereinafter, the influence of the heat of the base 40 on the frame member 50 will be described with reference to FIGS. 2 and 3 .

The frame member 50 which is a component of the substrate processing apparatus 1 is affected by the heat from the base 40 . For example, when the pedestal body 41 is heated by the heating wire 45 and the frame member 50 becomes a lower temperature relative to the pedestal body 41, the frame member 50 (the outer peripheral portion 51 and the eaves portion 52) will It is affected by the heat from the base 40 and is deformed to be elongated outward in the horizontal direction. Therefore, the shielding area of the peripheral edge wp of the substrate W is shielded by the frame member 50 which has a lower temperature and a larger temperature difference than the pedestal body 41, and the shielding area where the peripheral edge wp of the substrate W is shielded by the frame member 50 which has no temperature difference from the pedestal body 41. Areas where shading occurs become uneven. If the frame member 50 is deformed due to temperature changes on the base 40, the film formation may become uneven due to changes in the shielding area, and the accuracy of substrate processing may be reduced.

Furthermore, if the frame member 50 deforms while the frame member 50 is in contact with the base 40 , friction will occur between the base 40 and the frame member 50 due to the material difference between the base 40 and the frame member 50 . If damage or unevenness occurs on the pedestal 40 or the frame member 50 due to friction, the relative position of the eaves 52 relative to the substrate W (for example, the clearance C) will change, which may affect substrate processing. In addition, depending on the situation, this may cause the eaves 52 to come into contact with the substrate W. Although it is also considered to dispose the heater on the frame member 50 side, when the frame member 50 contacts the base 40 and the support plate 65 is displaced to a position lower than the step surface 412, the support plate 65 will be separated from the frame member 50. This structure makes it difficult to install the heater on the frame member 50 side.

Therefore, the control unit 70 related to this embodiment implements a preheating treatment method to position the frame member 50 at a preheating position HP that is non-contact and close to the base 40 before film formation in the substrate processing apparatus 1. The frame member 50 is preheated by the radiant heat of the base 40 . The preheated frame member 50 will be urged to deform outward in the horizontal direction before contacting the pedestal 40 to avoid deformation after contacting the pedestal 40 .

Hereinafter, the functional parts of the control part 70 that implement this preheating treatment method will be described with reference to FIG. 4 . FIG. 4 is a block diagram illustrating the functional blocks of the control unit 70 that implements the preheating treatment method.

The control unit 70 includes a pedestal temperature control unit 80, an initial control unit 81, a preheating condition determination unit 82, a preheating implementation unit 83, a preheating ineffective monitoring unit 84, an interlock unit 85, a substrate processing determination unit 86, and Substrate processing control unit 87.

The pedestal temperature control unit 80 will adjust the temperature of the pedestal 40 according to the target temperature of the pedestal 40 set by the user or the recipe. At this time, the pedestal temperature control unit 80 adjusts the power supply to the heater driving unit 46 based on the measured temperature obtained from the temperature sensor 47 so that the temperature of the pedestal 40 matches the target temperature.

The initial control unit 81 is a functional unit that performs initial operations of each component of the substrate processing apparatus 1 before substrate processing. During the initial operation of the frame member 50 and the frame member lifting unit 60 , the initial control unit 81 drives the mechanism body 64 of each unit lifting mechanism 61 to lower the support 62 to the lower limit position (reference position) to adjust the height of the support plate 65 Position alignment is at the reference position (zero point correction).

In addition, after the pillar 62 has reached the zero point correction of the lower limit position, the initial control unit 81 preferably causes the frame member 50 to rise immediately. Therefore, during the initial movement of the frame member lifting portion 60 , although the frame member 50 will contact the step surface 412 as the frame member lifting portion 60 descends, the implementation time of this initial movement is very short. For example, after about 3 seconds have elapsed since the contact, the initial control unit 81 operates the frame member lifting unit 60 to raise the support column 62 , thereby causing the frame member 50 to float from the step surface 412 . Thereby, during the initial control of the substrate processing apparatus 1, the deformation of the frame member 50 can be suppressed while the pedestal body 41 is in contact with the frame member 50 having a temperature difference with the pedestal body 41.

The initial control unit 81 can arrange the frame member 50 at any height position as long as the frame member 50 is not brought into contact with the step surface 412 while other components are performing initial operations after the zero point correction. Alternatively, the initial control unit 81 may place the frame member 50 in the preheating position HP (see FIG. 3 ) and make it standby during the initial operation of another configuration. Thereby, the substrate processing apparatus 1 can shorten the preheating time. In addition, the control unit 70 may perform the zero point correction at the end of the initial operation, and then immediately transfer to the operation of the preheating implementation unit 83 (preheating of the frame member 50 ) after the zero point correction.

The preheating condition determination unit 82 determines whether to perform preheating of the frame member 50 . For example, the control unit 70 outputs the frame member screen information 90 used to implement the preheating treatment method of the frame member 50 to the display device of the control unit 70 , and implements the preheating of the frame member 50 according to the user's manual operation.

FIG. 5 is a diagram illustrating frame member screen information 90 displayed by the display device. As shown in FIG. 5 , the frame member screen information 90 has buttons 91 for setting the operation of the frame member 50 during substrate processing, buttons 92 for setting the loading and unloading standby positions, and buttons 93 for specifying various positions of the frame member 50 . , and a button 94 for manual preheating. When the button 93 for specifying the position of the frame member 50 is operated, the control unit 70 displays the setting screen information (not shown) of the preheating position HP and the like. In addition, when the button 94 for manually performing preheating is operated, the control unit 70 preheats the frame member 50 under the control of the preheating implementation unit 83 described below.

Returning to FIG. 4 , the preheating condition determination unit 82 stores in advance a plurality of preheating conditions for preheating the frame member 50 , and when any one of the plurality of preheating conditions is established, the frame member 50 is automatically preheating, and when the plural preheating conditions are not met, the frame member 50 will not be preheated. For example, examples of complex preheating conditions include the following [a]~[c].

[a] The initial operation is performed when the operation of the substrate processing apparatus 1 starts (at startup) or when the operation is restarted.

[b] The temperature of the pedestal 40 changes due to user operations, operations of the substrate processing apparatus 1 , occurrence of an abnormality, or other events.

[c] It is recognized that the preheating of the frame member 50 is invalid (the preheating invalid flag F2 of the status register becomes 1).

Furthermore, the preheating implementation part 83 moves the frame member 50 relative to the step surface 412 to position the frame member 50 at the set preheating position HP (see also FIG. 3 ). The preheating position HP is a position where the frame member 50 will not interfere with the pedestal 40 even if it is deformed, and where the frame member 50 can well receive the radiated heat from the pedestal 40 . The separation distance X between the preheating position HP and the step surface 412 of the pedestal body 41 is shorter than the distance D between the mounting surface 411 and the step surface 412 . The actual separation distance Or, as mentioned above, the separation distance X of the preheating position HP can be set by the user through the setting screen information.

The preheating implementation unit 83 may be configured to automatically change the preheating position HP in accordance with the temperature of the base 40 . For example, the preheating implementation unit 83 stores distribution information (not shown) corresponding to the temperature of the pedestal 40 and the preheating position HP, and sets the preheating with reference to the temperature and distribution information of the pedestal 40 measured by the temperature sensor 47 . Hot location HP. That is, when the temperature of the pedestal 40 is high, the preheating position HP will be far away from the step surface 412 by the first distance. On the other hand, when the temperature of the pedestal 40 is low, the preheating position HP will be moved away from the step surface 412 by the first distance. The hot position HP changes to a second distance that is farther away from the step surface 412 than the first distance.

The preheating implementation unit 83 will automatically start the operation by receiving the establishment of the preheating condition determined by the preheating condition determination unit 82 (for example, information that the initial operation has ended), so as to operate the frame member lifting unit 60 to move the frame member. 50 HP configured in preheating position. At this time, the control unit 70 detects the current height position of the frame member 50 by acquiring the operating state of the frame member lifting unit 60 . Then, the control unit 70 displays the position of the support plate 65 and the position of the frame member 50 relative to the step surface 412 in the position information area 95 of the frame member screen information 90 shown in FIG. 5 . In addition, in FIG. 5 , the axis position column 951 of the position information area 95 is the relative distance of the support plate 65 relative to the reference position, and the frame member position column 952 of the position information area 95 is the relative distance of the frame member 50 relative to the step surface 412 .

After arranging the frame member 50 at the preheating position HP, the preheating implementation unit 83 waits at the preheating position HP until a preheating completion time elapses that allows the frame member 50 to be sufficiently heated. Although the preheating completion time varies depending on the temperature of the pedestal 40 or the preheating position HP, it is preferably set to about 3 seconds to 60 seconds, for example. The preheating completion time can also be automatically changed corresponding to the temperature of the base 40 or the preheating position HP. For example, the preheating execution unit 83 stores distribution information (not shown) that correlates the temperature of the base 40 with the preheating position HP based on the preheating completion time, sets the preheating completion time with reference to the distribution information, and proceeds until the preheating completion time. Timing until hot completion time.

In addition, during the preheating of the frame member 50, the preheating execution unit 83 marks the preheating unfinished flag F1 of the status register that displays the status information of the frame member 50 (the preheating unfinished flag F1 is changed from 0 to 0). becomes 1). On the other hand, after the preheating of the frame member 50 is completed, the preheating incomplete flag F1 is changed from 1 to 0. Furthermore, during preheating, the preheating implementation unit 83 detects the preheating state (elapsed time) and displays the elapsed time in the preheating information area 96 of the frame member screen information 90 shown in FIG. 5 , for example. The preheating information area 96 includes a status bar 961 that displays the current status of being implemented (preheating not completed), preheating completed, preheating not implemented, etc., and a preheating time that displays the elapsed time of preheating of the frame member 50 Column 962, a cooling time column 963, and the like display the elapsed time for the temperature of the frame member 50 to decrease.

In addition, the substrate processing apparatus 1 may be provided with a detection unit (not shown) that detects the temperature of the frame member 50 , and may perform execution determination, completion determination, etc. of preheating of the frame member 50 based on the temperature detected by the detection unit. Furthermore, when the control unit 70 is operating the substrate processing apparatus 1 (during production operation), when the substrate W is not transported toward the pedestal 40, it is preferable that the frame member 50 arranged in the preheating position HP is After the preheating completion time, it will still be in the preheating position HP standby. That is, even if the preheating incomplete flag F1 is 0, the frame member 50 is still arranged at the preheating position HP. Thereby, it is possible to prevent the temperature of the frame member 50 from dropping unexpectedly after the preheating is completed.

When the substrate processing apparatus 1 is operating, the preheating invalid monitoring unit 84 monitors the preheating invalid state in which the temperature of the temporarily preheated frame member 50 becomes a reduced state. The preheating ineffective monitoring unit 84 obtains the height position (vertical position) of the frame member 50 from, for example, the power distribution drive unit 66 and the like, and measures that the frame member 50 is located higher than the preheating position HP relative to the base 40 , and therefore occurs. The time required for the position where the temperature of the frame member 50 decreases (for example, when moving in and out of a standby position, etc.).

Figure 6 is a diagram illustrating the location information area and preheating information when monitoring preheating is invalid. In the position information area 95 shown in FIG. 6 , the frame member position column 952 has a large value, indicating the position where the temperature decrease of the frame member 50 occurs. In addition, the cooling time column 963 of the preheating information area 96 shown in FIG. 6 indicates the measured preheating ineffective time.

When the preheating ineffective monitoring unit 84 recognizes that the elapsed time is longer than the preset preheating ineffective time, it determines that the temperature of the frame member 50 has dropped, that is, the preheating of the frame member 50 has become ineffective. The preheating ineffective time varies depending on the temperature in the processing space 14a (temperature of the pedestal 40), but is set to a value of 3 minutes or more, for example. In addition, the preheating invalid time can also be automatically changed corresponding to the temperature in the processing container 10 or the base 40 . When the preheating invalid monitoring unit 84 determines that the preheating of the frame member 50 has become invalid, it flags the preheating invalid flag F2 (changes the preheating invalid flag F2 from 0 to 1).

When the control unit 70 sets the preheating invalid flag F2 to 1, the control unit 70 switches the preheating completed status display to the preheating not implemented status display in the status bar 961 of the preheating information area 96 . Then, the control unit 70 causes the preheating implementation unit 83 to operate again to reheat the frame member 50 . For example, when the substrate W is not loaded or unloaded, the control unit 70 operates the frame member lifting unit 60 under the control of the preheating implementation unit 83 to arrange the frame member 50 in the preheating position HP. Then, after the preheating execution unit 83 starts preheating, the preheating invalid monitoring unit 84 changes the preheating invalid flag F2 from 1 to 0. On the other hand, the preheating implementation unit 83 changes the preheating incomplete flag F1 from 0 to 1.

Returning to FIG. 4 , the interlock unit 85 of the control unit 70 performs preheating when the preheating incomplete flag F1 or the preheating invalid flag F2 has become 1 (preheating is incomplete, preheating is invalid, etc.). interlocking. For example, in the preheating interlock, the interlock portion 85 prevents the frame member 50 from contacting the step surface 412 of the base 40 except for the initial operation. For example, the interlocking part 85 prohibits the frame member 50 from contacting the step surface 412 by stopping the operation of functional parts other than the preheating implementation part 83 in software. Alternatively, the interlocking portion 85 can also make the intervening components contact the frame member 50 to mechanically block the frame member 50 from contacting the step surface 412 .

Furthermore, the interlock unit 85 prohibits the substrate processing (execution of the recipe) when the preheating incomplete flag F1 or the preheating invalid flag F2 has become 1. For example, during the prohibition of substrate processing, the substrate processing apparatus 1 prohibits the loading of the substrate W, prohibits the supply of gas into the processing container 10 , prohibits the operation of the high-frequency power supply 32 , and the like.

In addition, the interlocking portion 85 can be interlocked when the frame member 50 is in contact with the pedestal 40 and the temperature change of the pedestal 40 is prohibited. Examples of changes in the temperature of the pedestal include stopping heating by the heating wire 45 and making the inside of the processing container 10 vacuum. Thereby, it is possible to avoid deformation of the frame member 50 when in contact with the step surface 412 due to temperature changes received by the frame member 50 from the step surface 412 of the base 40 .

In addition, when the temperature of the pedestal 40 needs to be changed, the control unit 70 may first perform an evasive action to float the frame member 50 from the step surface 412 , and then change the temperature of the pedestal 40 . By this dodging operation, the substrate processing apparatus 1 can reliably avoid friction between the pedestal 40 and the frame member 50 and smoothly change the temperature of the pedestal 40 .

The substrate processing determination unit 86 of the control unit 70 determines whether the execution conditions of the substrate processing are satisfied or not, and determines the execution of the substrate processing. For example, the substrate processing determination unit 86 determines that the interlocking unit 85 does not perform interlocking (the preheating incomplete flag F1 is 0 and the preheating invalid flag F2 is 0) as a condition for executing the substrate processing. Examples of other execution conditions for the substrate processing include that the substrate processing has been performed according to the recipe, the substrate W to be transported by the transport device has been prepared, and no abnormality or other events have occurred.

When the execution condition is satisfied by the substrate processing determination unit 86 , the substrate processing control unit 87 of the control unit 70 controls each component of the substrate processing apparatus 1 to execute the substrate processing. Specifically, the substrate processing control unit 87 raises the preheated frame member 50 to place it in the loading/unloading waiting position, and after loading the substrate W toward the mounting surface 411 , lowers the frame member 50 to move it. Contact the step surface 412 of the base 40 . Then, the substrate processing control unit 87 sets the inside of the processing container 10 to a preset vacuum atmosphere, supplies the gas to the processing space 14 a to form a plasma, and thereby supplies the precursor in the plasma to the substrate W. Actual substrate processing. The substrate processing includes film formation processing using CVD method, etching processing, etc.

The substrate processing apparatus 1 according to one embodiment is basically configured as described above, and its operation will be described below with reference to FIGS. 7 and 8 . FIG. 7 is a flow chart illustrating the preheating treatment method of the frame member 50 . Figure 8 is a flow chart showing a substrate processing procedure.

The substrate processing apparatus 1 performs a preheating process of preheating the frame member 50 during operation (for example, during startup or operation). During the implementation of the preheating treatment method, the pedestal temperature control unit 80 of the control unit 70 controls the heater driving unit 46 to adjust the temperature of the pedestal 40 so that the pedestal 40 reaches the target temperature set by the user or the recipe (step S1 ).

Furthermore, the initial control unit 81 of the control unit 70 controls the initial operation of each component of the substrate processing apparatus 1 (step S2). In the initial operation of the frame member lifting unit 60, the initial control unit 81 lowers the pillar 62 of each unit lifting mechanism 61 to the lower limit position, thereby aligning the zero point position of the support plate 65. In addition, the substrate processing apparatus 1 can control the initial operation (step S2) and adjust the temperature of the base 40 (step S1) at the same time point.

Then, the preheating condition determination unit 82 of the control unit 70 checks the above preheating conditions for preheating the frame member 50 and determines whether the preheating conditions are established (step S3). When the preheating condition is not established in step S3 (step S3: NO), steps S4 to S9 are skipped and the process proceeds to step S10 so that preheating of the frame member 50 is not performed.

When the preheating condition is established in step S3 (step S3: YES), the preheating execution unit 83 of the control unit 70 sets the preheating incomplete flag F1 to 1 (step S4). After recognizing that the preheating incomplete flag F1 is 1, the interlocking unit 85 performs interlocking during preheating. During the preheating interlock, the interlock portion 85 performs interlock such as prohibiting contact of the frame member 50 with the pedestal 40 and prohibiting processing of the substrate W as a restriction on the above-mentioned general operations (step S5).

Furthermore, the preheating implementation part 83 controls the action of the frame member lifting part 60 to arrange the frame member 50 at the preheating position HP away from the step surface 412 of the base 40 (step S6).

Then, the preheating implementation unit 83 supplies the heat dissipation of the base 40 to the frame member 50 by maintaining the frame member 50 arranged in the preheating position HP, thereby preheating the frame member 50 (step S7).

In the implementation of step S7, the preheating implementation unit 83 counts the time from the time when the frame member 50 is arranged in the preheating position HP, and determines whether the waiting time in the preheating position HP has reached the preheating completion time ( Step S8). Then, when the waiting time has not reached the preheating completion time (step S8: NO), the preheating implementation unit 83 returns to step S7 to continue preheating the frame member 50. On the other hand, when the standby time has reached the preheating completion time (step S8: YES), the preheating implementation part 83 will recognize that there is no temperature difference between the base 40 and the frame member 50, and raise the preheating incomplete flag. When F1 returns to 0, preheating is completed (step S9). The interlocking unit 85 releases the interlocking of the action of the frame member 50 contacting the step surface 412 and the substrate processing according to the fact that the preheating incomplete flag F1 has become 0.

After the preheating is completed, the substrate processing determination unit 86 of the control unit 70 checks the recipe, the mounting state of the substrate W on the transport device, abnormal conditions, etc., and determines whether to shift to substrate processing (step S10). If the process does not shift to substrate processing (step S10: NO), the control unit 70 continues the standby of the frame member 50 at the preheating position HP (step S11), and returns to step S10.

On the other hand, when the process shifts to substrate processing (step S10: NO), the substrate processing control unit 87 of the control unit 70 performs the above-mentioned substrate processing operation (substrate processing program) (step S12).

As shown in FIG. 8 , in the substrate processing program, the substrate processing control unit 87 first controls the operation of the frame member lifting unit 60 to place the frame member 50 in the unloading and unloading waiting position (step S21 ). In this state, the substrate processing control unit 87 cooperates with the transport device to carry the substrate W into the processing container 10 and place the substrate W on the placement surface 411 of the pedestal 40 (step S22).

After that, the substrate processing control unit 87 controls the movement of the frame member lifting unit 60 to lower the frame member 50 relative to the pedestal 40 and the substrate W, so that the lower surface 511 of the outer peripheral portion 51 of the frame member 50 contacts the step surface of the pedestal 40 412 (step S23). Thereby, the eaves 52 of the frame member 50 cover the upper edge of the substrate W with respect to the substrate W in a non-contact state.

Thereafter, the substrate processing control unit 87 sets the inside of the processing container 10 to a preset vacuum atmosphere, supplies the gas to the processing space 14a to form a plasma, and thereby supplies the precursor in the plasma to the substrate W. Actual substrate processing (step S24).

Furthermore, after the substrate is processed, the substrate processing control unit 87 operates the frame member lifting unit 60 to raise the frame member 50 to the unloading and loading standby position (step S25), and unloads the processed substrate W from the processing container 10 (step S25). Step S26). Then, the substrate processing determination unit 86 determines whether to further continue the substrate processing (step S27). If it is determined that the substrate processing has been completed (step S27: NO), the processing flow is ended. On the other hand, if the substrate processing is to be continued (step S27: YES), the substrate processing determination unit 86 determines whether the substrate W can be transported into the processing container 10 (step S28). When the substrate W can be transported (step S28: YES), the substrate processing control unit 87 returns to step S22 after arranging the frame member 50 in the loading/unloading standby position, and repeats the following steps starting from the loading of the substrate W. action. The time required for carrying out and loading the substrate W toward the mounting surface 411 is not as long as the temperature of the frame member 50 is significantly lowered (a shorter time than the preheating ineffective time), but is, for example, several dozen seconds to About 2 minutes.

On the other hand, when the substrate W cannot be transported immediately (step S28: NO), the preheating ineffective monitoring unit 84 counts the time and determines whether the measurement time has become longer than the preheating ineffective time (step S29 ). When the measurement time is shorter than the preheating invalid time (step S29: NO), the process returns to step S28 to repeat the transfer monitoring of the substrate W. Then, when the measurement time becomes longer than the preheating invalid time (step S29: YES), the preheating invalid monitoring unit 84 determines that the preheating has become invalid, and sets the preheating invalid flag F2 to 1 ( Step S30).

When the preheating invalid flag F2 is 1, the preheating condition in step S3 will be established. Then, the preheating execution unit 83 of the control unit 70 executes the processing flow after step S4 again. Returning to the situation after step S4, the control unit 70 sets the preheating invalid flag to 0 and sets the preheating incomplete flag to 1. In addition, when the substrate W cannot be transported into the processing container 10 , the control unit 70 may move the frame member 50 to the preheating position HP and wait for the preheating invalid time, thereby preheating the frame member 50 . Thereby, the temperature drop of the frame member 50 can be suppressed favorably. Then, when the substrate W becomes transportable, the control unit 70 raises the frame member 50 in the preheating position HP to the unloading and unloading waiting position again.

As described above, the component preheating method and the substrate processing apparatus 1 can appropriately preheat the component that is contactable and relatively movable with respect to the base 40 , that is, the frame member 50 . Then, the part preheating method and the substrate processing apparatus 1 preheat the frame member 50 to preliminarily cause the frame member 50 to deform along with the temperature change, thereby allowing the frame member 50 to contact the base 40 state so that the frame member 50 will not deform. Therefore, the relative position of the frame member 50 and the substrate W on the pedestal 40 becomes stable, and the uniformity of processing of the substrate W can be improved.

In addition, in the process of preheating the parts, the parts (frame member 50) are made to wait in the preheating position HP until a preset preheating completion time elapses. Thereby, the preheating treatment method of parts can adjust the temperature of the frame member 50 during the preheating treatment until the temperature difference with the base 40 is sufficiently eliminated.

In addition, after the process of preheating the parts, there is a process of measuring the time when the parts (frame member 50) is at a position further away from the base 40 than the preheating position HP, and determining whether the measurement time has passed the preheating invalid time. , when the measurement time has passed the preheating invalid time, the preheating of the parts will be identified as invalid, and the process of preheating the parts will be implemented again. Accordingly, even if the parts have been temporarily preheated, the parts can be easily reheated as needed.

In addition, the substrate processing apparatus 1 is equipped with a parts lifting part (frame member lifting part 60) that lifts and lowers a movable part (support plate 65) that supports the parts (frame member 50) in a detachable manner. Before the process of hot parts, an initial action is performed. This initial action is to lower the movable part to make the part contact the base 40, and to align the movable part at the reference position by disengaging the part from the movable part. Thereby, the part preheating method can control the position of the parts when the frame member 50 is raised and lowered with good accuracy, so as to preheat the parts more appropriately.

In addition, the base 40 has a contact surface (step surface 412) with which the components (frame member 50) can come into contact, and the preheating position HP is set to a range of 0.3 mm to 3 mm with respect to the contact surface. Thereby, the part preheating treatment method can effectively adjust the temperature of the part positioned at the preheating position HP.

In addition, during the process of preheating the parts, there is a preheating interlock process that restricts the operation of the substrate processing apparatus 1 . This allows for a safer preheating process for parts.

In addition, during preheating, the interlock prohibits the parts (frame member 50) from contacting the base 40 as a restriction on the movement. Thereby, the preheating method of parts can reliably prevent parts that have not yet completed preheating from contacting the base 40 .

In addition, the interlock prohibits the processing of the substrate W during warm-up as a restriction on the operation. Therefore, when the preheating treatment method of parts (frame member 50) involves parts that have not yet completed preheating, there is no need to process the substrate W, thereby avoiding friction of the parts against the base 40 or the substrate W.

Furthermore, when the component (frame member 50) is brought into contact with the base, a contact-time interlock is performed to prohibit the temperature change of the base 40. Thereby, the preheat treatment method of the parts can suppress the deformation of the parts in contact with the base 40 caused by the temperature change of the base 40 .

In addition, the component is a frame member 50, which has an eaves portion 52 that covers the upper portion of the peripheral edge wp of the substrate W on which the pedestal 40 is placed in contact with the pedestal 40. Thereby, the preheating method of parts can stably cover the periphery of the substrate W through the eaves 52 of the frame member 50 after preheating.

In addition, one aspect of the present disclosure is a substrate processing apparatus 1 having a pedestal 4 on which the substrate W is placed, and a component (frame member 50) that is contactable and relatively movable relative to the pedestal 40, and has a control that controls the movement of the component. 70, the control unit 70 will position the parts at a non-contact preheating position HP relative to the pedestal 40, preheat the parts by radiant heat from the pedestal 40, and make the preheated parts contact the Pedestal 40. Thereby, the substrate processing apparatus 1 can appropriately preheat the parts to improve the uniformity of processing the substrate W.

The preheating treatment method of the frame member 50 and the substrate processing apparatus 1 related to the embodiments disclosed in this specification should be considered in all respects as illustrative only and not intended to limit the content of the present invention. The implementation may be modified and improved in various ways within the scope of the patent application and its gist. The matters described in the above plural embodiments may take other configurations within the scope of not being inconsistent, and may be combined within the scope of not being inconsistent.

The substrate processing device 1 of the present disclosure can also be applied to ALD (Atomic Layer Deposition) devices, CCP (Capacitively Coupled Plasma), ICP (Inductively Coupled Plasma), RLSA (Radial Line Slot Antenna), ECR (Electron Cyclotron Resonance Plasma), HWP (Helicon Wave Plasma) any type of device.

1:Substrate processing device 10: Handle the container 40:pedestal 50:Frame components 60: Frame member lifting part 70:Control Department HP: preheat position W: substrate

FIG. 1 is a cross-sectional view illustrating an example of a substrate processing apparatus according to an embodiment. FIG. 2 is a diagram illustrating the base and frame components of the substrate processing apparatus. FIG. 3 is a cross-sectional view showing a state where the frame member is arranged in a preheating position. FIG. 4 is a block diagram illustrating the functional blocks of the control unit that implements the preheating treatment method. FIG. 5 is a diagram illustrating frame member screen information displayed by the display device. Figure 6 is a diagram illustrating the location information area and preheating information when monitoring preheating is invalid. Figure 7 is a flow chart illustrating a method of preheating a frame member. Figure 8 is a flow chart showing a substrate processing procedure.

40:pedestal

41:pedestal body

50:Frame components

51: Peripheral part

52:Eaves

60: Frame member lifting part

61: Unit lifting mechanism

62:Pillar

65:Support plate

411:Placement surface

412: Step difference surface

413: Side surface

511: Below

512: Medial side

513:Outer side

514:Above

521:Above

522: Below

523:Inner edge

C: Clearance

D:interval

HP: preheat position

T1:Thickness

T2:Thickness

W: substrate

X: separation distance

wp:periphery

Claims (11)

A method for preheating parts, which is a method for preheating parts that are contactable and relatively movable relative to a pedestal for placing substrates in a substrate processing device; Has the following processes: The process of positioning the part in a non-contact preheating position relative to the pedestal and preheating the part by radiant heat from the pedestal; and The process of bringing the preheated part into contact with the base through the process of preheating the part. For example, in the preheating treatment method for parts described in Item 1 of the patent application, during the process of preheating the part, the part is made to wait at the preheating position until the preset preheating completion time has elapsed. For example, if the preheating treatment method for parts in Item 1 or 2 of the patent application scope is applied, after the process of preheating the part, the time for the part to be at a position further away from the base than the preheating position is measured. , and determine whether the measurement time has passed the preheating invalid time process; If the measurement time has passed the preheating invalid time, the preheating of the part will be identified as invalid, and the process of preheating the part will be implemented again. For example, the preheating treatment method for parts in any one of items 1 to 3 of the patent application scope, wherein the substrate processing device is equipped with a part lifting part, and the part lifting part is a movable part that supports the part to be detachable. to lift the part; Before the process of preheating the part, an initial action is performed. The initial action is to lower the movable part to make the part contact the base, thereby disengaging the part from the movable part and aligning the movable part at the reference position. . For example, the preheating treatment method for parts in any one of items 1 to 4 of the patent scope, wherein the base has a contact surface that allows the parts to contact; The preheating position is set to a range of 0.3mm~3mm relative to the contact surface. For example, if the method of preheating a component in any one of items 1 to 5 of the patent application is applied for, during the process of preheating the component, a preheating interlock is implemented to limit the movement of the substrate processing device. For example, in the preheating treatment method for parts in Item 6 of the patent application, the interlock during preheating prohibits the part from contacting the base as a restriction of the action. For example, in the preheating treatment method of parts in Item 6 or 7 of the patent application, the interlock during preheating prohibits the processing of the substrate as a restriction on the action. For example, in the preheating treatment method for parts in any one of items 1 to 8 of the patent application, during the process of bringing the part into contact with the base, a contact interlock is implemented to prohibit the temperature change of the base. For example, the preheating treatment method for parts in any one of the patented items 1 to 9, wherein the part is a frame member with an eaves, and the eaves will cover the base when in contact with the pedestal. Place it above the peripheral edge of the substrate. A substrate processing device having a pedestal for placing a substrate, and parts that are contactable and relatively movable relative to the pedestal; Having a control part that controls the movement of the part; The control part will position the part at a non-contact preheating position relative to the pedestal, preheat the part by radiant heat from the pedestal, and make the preheated part contact the pedestal.

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