CN115621158A - Method for preheating parts and substrate processing apparatus - Google Patents

Method for preheating parts and substrate processing apparatus Download PDF

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Publication number
CN115621158A
CN115621158A CN202210793940.5A CN202210793940A CN115621158A CN 115621158 A CN115621158 A CN 115621158A CN 202210793940 A CN202210793940 A CN 202210793940A CN 115621158 A CN115621158 A CN 115621158A
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China
Prior art keywords
preheating
stage
frame member
substrate
component
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CN202210793940.5A
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Chinese (zh)
Inventor
熊谷义纪
武部一宏
佐藤吉宏
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention provides a component preheating method and a substrate processing device, which can properly preheat components arranged on a stage to improve the uniformity of processing of a substrate. In a method for preheating a component, the component which can contact with a stage for placing a substrate of a substrate processing device and can move relative to the stage is preheated. The preheating treatment method of the component comprises the following steps: positioning the component in a preheating position out of contact with the stage, the component being preheated by radiant heat from the stage; and bringing the part preheated in the step of preheating the part into contact with the stage. Thus, the member can be appropriately preheated to improve the uniformity of the treatment on the substrate.

Description

Preheating treatment method for component and substrate treatment device
Technical Field
The present disclosure relates to a method of preheating a member and a substrate processing apparatus.
Background
Patent document 1 discloses a substrate heating apparatus (substrate processing apparatus) that suppresses deformation caused by thermal deformation of a substrate by heating upper and lower surfaces of the substrate in a state where the substrate is lifted from a stage (stage) before the substrate is placed on a substrate receiving table (stage).
In addition, a film deposition apparatus, which is one of the substrate processing apparatuses, may dispose a frame-shaped member (frame member) at the periphery of the substrate to suppress film deposition at the periphery of the substrate. The frame member is provided to be movable relative to the stage, and contacts the stage to cover the peripheral edge of the substrate during substrate processing.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 5-160046
Disclosure of Invention
Problems to be solved by the invention
The present disclosure provides a technique capable of improving uniformity of processing of a substrate by appropriately preheating a member disposed on a stage.
Means for solving the problems
According to one aspect of the present disclosure, there is provided a method of preheating a component which is capable of contacting a stage on which a substrate is placed of a substrate processing apparatus and is capable of moving relative to the stage, the method comprising: positioning the component in a preheating position out of contact with the stage, the component being preheated by radiant heat from the stage; and bringing the part preheated in the step of preheating the part into contact with the stage.
ADVANTAGEOUS EFFECTS OF INVENTION
According to one embodiment, the components disposed on the stage can be appropriately preheated to improve the uniformity of the processing of the substrate.
Drawings
Fig. 1 is a sectional view showing an example of a substrate processing apparatus according to an embodiment.
Fig. 2 is a view showing a stage and a frame member of the substrate processing apparatus.
Fig. 3 is a sectional view showing a state in which the frame member is disposed at the preheating position.
Fig. 4 is a block diagram showing functional blocks of a control unit for implementing the preheating method.
Fig. 5 is a diagram illustrating frame member screen information displayed on the display device.
Fig. 6 is a diagram illustrating a position information area and warm-up information when monitoring warm-up is invalid.
Fig. 7 is a flowchart showing a method of preheating the frame member.
Fig. 8 is a flowchart showing a substrate processing routine.
Detailed Description
Hereinafter, a mode for carrying out the present disclosure will be described with reference to the drawings. In the drawings, the same structural parts are denoted by the same reference numerals, and overlapping description is sometimes omitted.
Fig. 1 is a cross-sectional view showing an example of a substrate processing apparatus 1 according to an embodiment. As shown in fig. 1, a substrate processing apparatus 1 according to one embodiment is an Inductively Coupled Plasma (ICP) processing apparatus that performs various substrate processes on an FPD substrate (hereinafter, simply referred to as a substrate W).
Examples of FPDs that perform substrate processing include Liquid Crystal Displays (LCDs), electroluminescence (ELs), plasma Display Panels (PDPs), and the like. In this case, glass, synthetic resin, or the like is used as a material of the substrate W. The substrate W may include a substrate having a pattern of a circuit formed on a surface thereof, a support substrate having no circuit, or the like. The planar dimensions of the substrate W may be about 1800mm to 3400mm in the long side and about 1500mm to 3000mm in the short side. The thickness of the substrate W may be in the range of about 0.2mm to 4.0 mm. Examples of the substrate processing performed by the substrate processing apparatus 1 include a film formation process and an etching process using a CVD (Chemical Vapor Deposition) method. Next, the substrate processing apparatus 1 that performs the film formation process will be described.
The substrate processing apparatus 1 includes a rectangular parallelepiped box-shaped processing container 10. The processing container 10 is made of metal such as aluminum or aluminum alloy. The processing container 10 may be formed in an appropriate shape according to the shape of the substrate W, and for example, in the case where the substrate W is a circular plate or an elliptical plate, the processing container 10 is preferably formed in a cylindrical shape, an elliptical cylindrical shape, or the like.
The processing container 10 includes a rectangular support frame 11 projecting toward the inside of the processing container 10 at a predetermined position in the vertical direction, and the dielectric plate 12 is supported in the horizontal direction by the support frame 11. The processing container 10 is divided into an upper chamber 13 and a lower chamber 14 with a dielectric plate 12 interposed therebetween. The upper chamber 13 has an antenna chamber 13a formed therein. The lower chamber 14 has a processing space 14a formed therein for placing a substrate W and processing the substrate.
The side wall 15 of the lower chamber 14 includes a carrying-in/out port 17 opened and closed by a gate valve 16. When the gate valve 16 is opened, the substrate processing apparatus 1 carries in and out the substrate W by a not-shown carrying device through the carrying-in and carrying-out port 17.
The side wall 15 of the lower chamber 14 is grounded (connected to the ground potential) via a ground line 18. The four side walls 15 of the lower chamber 14 have an annularly surrounding seal groove 19 at the upper end. The support frame 11 and the lower chamber 14 are hermetically sealed by disposing a sealing member 20 such as an O-ring in the sealing groove 19.
The support frame 11 is made of metal such as aluminum or aluminum alloy. The dielectric plate 12 is made of alumina (Al) 2 O 3 ) Etc. ceramic, quartz.
A shower head 21 is provided inside the support frame 11, and the shower head 21 is connected to the support frame 11 and discharges a gas into the processing space 14a. The dielectric plate 12 is supported on the upper surface of the shower head 21. The shower head 21 is formed of a metal such as aluminum, and preferably has its surface treated by anodic oxidation. A gas flow path 21a is formed in the horizontal direction inside the shower head 21. The shower head 21 has a plurality of gas ejection holes 21b that communicate the gas channel 21a with the lower surface (the processing space 14 a) of the shower head 21.
A gas introduction pipe 22 communicating with the gas flow path 21a is connected to the upper surface of the shower head 21. The gas introduction pipe 22 extends upward in the upper chamber 13, penetrates the upper chamber 13 in an airtight manner, and is connected to a gas supply unit 23 provided outside the processing container 10.
The gas supply unit 23 has a gas supply pipe 24 connected to the gas introduction pipe 22, and includes a gas supply source 25, a mass flow controller 26, and an on-off valve 27 in this order from the upstream side to the downstream side of the gas supply pipe 24. In the substrate processing, a gas is supplied from a gas supply source 25, the flow rate of the gas is controlled by a mass flow controller 26, and the supply timing of the gas is controlled by an on-off valve 27. The gas flows from the gas supply pipe 24 into the gas flow path 21a through the gas introduction pipe 22, and is discharged in a shower-like manner to the processing space 14a through the gas discharge holes 21b.
A high-frequency antenna 28 is provided in the upper chamber 13 forming the antenna chamber 13a. The high-frequency antenna 28 is formed by wiring an antenna wire made of a conductive metal such as copper in a ring shape or a spiral shape. Alternatively, the high-frequency antenna 28 may be formed by providing a plurality of loop-shaped antenna wires. A feeding member 29 extending upward in the upper chamber 13 is connected to a terminal of the high-frequency antenna 28.
The power feeding member 29 has an upper end protruding outside the processing container 10, and the power feeding line 30 is connected to the upper end. The power supply line 30 is connected to a high-frequency power supply 32 via a matching box 31 for impedance matching. The high-frequency power supply 32 applies high-frequency power of a frequency (for example, 13.56 MHz) corresponding to the substrate processing to the high-frequency antenna 28. Thereby, the high-frequency antenna 28 forms an induced electric field in the lower chamber 14. The substrate processing apparatus 1 converts the gas supplied from the shower head 21 to the processing space 14a into plasma by the induced electric field formed in the lower chamber 14, and supplies the precursor in the plasma to the substrate W.
Further, a plurality of exhaust ports 33a are formed in the bottom wall 33 of the lower chamber 14, and an exhaust portion 34 for gas is provided in each exhaust port 33 a. The exhaust unit 34 has a gas exhaust pipe 35, and an exhaust mechanism 37 is provided in the gas exhaust pipe 35. The exhaust mechanism 37 includes an on-off valve 36 and a vacuum pump 38 in this order from the upstream to the downstream of the gas exhaust pipe 35. The vacuum pump 38 may be a turbo molecular pump or the like, and may evacuate the lower chamber 14 to a predetermined vacuum degree during substrate processing.
The processing container 10 includes a stage 40 (mounting table) for mounting the substrate W carried in from the carrying-in/out port 17 in the lower chamber 14.
The stage 40 includes a stage main body 41, an insulating member 42, a plurality of lift pins 43, and a plurality of lift pin lift mechanisms 44. The substrate W carried into the lower chamber 14 is transferred to the lift pins 43 lifted by the lift pin lift mechanisms 44, and the substrate W is placed on the stage main body 41 by lowering the lift pins 43.
The stage main body 41 is formed in a rectangular shape in plan view, and has a mounting surface 411 having a planar size approximately equal to that of the substrate W. For example, the planar size of the mounting surface 411 may be in the range of 1800mm to 3400mm on the long side and 1500mm to 3000mm on the short side. The stage body 41 has a step surface 412 lower than the mounting surface 411 on the outer side of the mounting surface 411. The step surface 412 surrounds the entire periphery of the stage main body 41 and supports a frame member 50 described later. The stage main body 41 has a side circumferential surface 413 substantially parallel to the vertical direction between the mounting surface 411 and the step surface 412.
The stage main body 41 is formed of aluminum, aluminum alloy, or the like, and includes a heater wire 45 as a resistor therein. The heater wire 45 is wired so as to uniformly raise the temperature of the entire placement surface 411. It is preferable that the heater wire 45 is also provided at a position below the stepped surface 412, and the temperature of the stepped surface 412 is set to be equal to the temperature of the mounting surface 411. The heating wire 45 is formed of tungsten, molybdenum, nickel, chromium, or a compound of any one of the metals with alumina, titanium, or the like.
The heater wire 45 is connected to a heater driving unit 46, and is heated by power supply from the heater driving unit 46. The heater driving unit 46 is connected to the control unit 70 of the substrate processing apparatus 1, and outputs electric power according to a temperature command from the control unit 70. For example, when the substrate processing apparatus 1 performs a substrate process (film formation process), the mounting surface 411 of the stage 40 is heated to about 300 ℃. The substrate W placed on the placing surface 411 is also heated to 300 ℃ by the stage main body 41. The substrate processing apparatus 1 may include a meandering flow path (not shown) inside the stage main body 41 instead of the heater wire 45, and may perform temperature control including heating and cooling by flowing a temperature control medium through the flow path.
The stage main body 41 is provided with a temperature sensor 47 such as a thermocouple, and the temperature sensor 47 transmits the measured temperature of the stage main body 41 to the control unit 70 as needed. The control unit 70 adjusts the temperature of the stage main body 41 to the target temperature based on the transmitted measured temperature.
The insulating member 42 is formed of an insulating material, and is provided at a plurality of locations on the bottom wall 33 of the lower chamber 14. The insulating member 42 fixes and supports the stage main body 41 in a state where the stage main body 41 slightly floats with respect to the bottom wall 33.
The substrate processing apparatus 1 further includes a frame member 50 and a frame member elevating unit 60 around the stage 40, wherein the frame member 50 is a member that can contact the stage 40 and can move relative to the stage 40, and the frame member elevating unit 60 elevates the frame member 50 in the vertical direction (height direction) relative to the stage 40. Fig. 2 is a view showing the stage 40 and the frame member 50 of the substrate processing apparatus 1, wherein fig. 2 (a) is a perspective view, and fig. 2 (b) is a cross-sectional view showing a state in which the frame member 50 is in contact with the step surface 412 of the stage 40.
As shown in fig. 2, the frame member 50 is a member that covers the upper side of the peripheral edge wp of the substrate W in a non-contact manner, thereby preventing the precursor from forming a film on the peripheral edge wp of the substrate W, from being wound around the back surface of the substrate W, and the like. The frame member 50 is also referred to as a shadow ring. The frame member 50 is formed in a rectangular shape that overlaps the stepped surface 412 of the stage 40 in a plan view. The frame member 50 may be formed in an appropriate shape according to the outer shape of the substrate W, and may be square, circular, or the like.
The frame member 50 is preferably made of aluminum or an alloy thereof, ceramics such as alumina, glass, or the like, and may be made of aluminum or an alloy thereof that is as light as possible and has elasticity (flexibility) and rigidity. When the frame member 50 is aluminum or an alloy thereof, it is preferable that the frame member 50 is anodized with aluminum or that the frame member 50 has a sprayed film of yttria or the like to prevent corrosion and improve plasma resistance.
The frame member 50 has an outer peripheral portion 51 surrounding the outer side of the frame, and a brim portion 52 projecting inward from the upper portion of an inner surface 512 of the outer peripheral portion 51. The frame member 50 has a reinforcing portion 53 for reinforcing the connection between the eaves 52 on the upper surface of the eaves 52 at the corner where the long side and the short side intersect. In the present embodiment, the outer peripheral portion 51 and the brim portion 52 are integrally formed of the same material. The outer peripheral portion 51 and the brim portion 52 may be formed of different materials, and the frame member 50 may be configured without the reinforcing portion 53.
As shown in fig. 2 (b), when the frame member elevating portion 60 moves downward from the state of fig. 1, the outer peripheral portion 51 comes into contact with the stepped surface 412 of the stage main body 41 and is supported by the stepped surface 412. In the supported state in which the outer peripheral portion 51 is supported by the stepped surface 412, the eaves portion 52 is disposed at a position spaced apart from the mounting surface 411 upward from the substrate W mounted on the mounting surface 411 (without contacting the substrate W). The ridge portion 52 overlaps the peripheral edge wp of the substrate W over the entire outer periphery of the substrate W in the vertical direction, thereby blocking the film formation on the peripheral edge wp of the substrate W.
The thickness T1 of the outer peripheral portion 51 is larger than the distance D between the mounting surface 411 of the stage body 41 and the step surface 412. The thickness T1 of the outer peripheral portion 51 depends on the size of the frame member 50 (substrate W), and when the long side of the frame member 50 is 3000mm or more, for example, the thickness T1 is preferably set to 20mm or more. This improves the rigidity of the frame member 50, and allows the frame member elevating unit 60 to linearly support the frame member 50.
The lower surface 511 of the outer peripheral portion 51 is formed flat so as to be in surface contact with the step surface 412. In a supported state in which the outer peripheral portion 51 is supported by the step surface 412, the inner surface 512 of the outer peripheral portion 51 faces the side peripheral surface 413 between the placement surface 411 and the step surface 412 in a non-contact manner. Conversely, in a supported state in which the outer peripheral portion 51 is supported by the step surface 412, the outer side surface 513 of the outer peripheral portion 51 protrudes outward in the horizontal direction than the step surface 412. The frame member elevating portion 60 supports a lower surface 511 of the protruding portion of the outer peripheral portion 51. Further, the upper surface 514 of the outer peripheral portion 51 is formed flat in the horizontal direction and smoothly continues to the upper surface of the brim 52 at the boundary with the inner side surface 512.
The brim 52 is formed to be sufficiently thin with respect to the thickness T1 of the outer peripheral portion 51, and projects from the outer peripheral portion 51 toward the inside of the frame member 50 in a short manner. The ratio of the thickness T2 of the brim 52 (the thickness of the root portion continuous with the outer peripheral portion 51) to the thickness T1 of the outer peripheral portion 51 may be, for example, in the range of about 1/10 to 1/3. The amount of protrusion of the brim 52 from the outer peripheral portion 51 depends on the relative distance between the placement surface 411 and the outer peripheral portion 51, and is preferably set in the range of, for example, about 20mm to 50 mm.
The inner edge 523 side of the upper surface 521 of the brim portion 52 forms an inclined surface that gradually inclines downward toward the inside in the horizontal direction when the frame member 50 is disposed on the step surface 412. On the other hand, when the frame member 50 is disposed on the stepped surface 412, the lower surface 522 of the brim portion 52 is formed in a flat shape extending in the horizontal direction from the inner surface 512 of the outer peripheral portion 51 and reaching the inner edge 523. In the supported state in which the outer peripheral portion 51 is supported by the step surface 412, the lower surface 522 of the brim portion 52 is spaced apart from the placement surface 411 by a gap C obtained by adding a predetermined margin height to the thickness of the substrate W. The clearance C may be set to about 0.3mm to 5mm, for example. As described above, the frame member 50 covers the peripheral edge wp of the substrate W with the brim 52 with the gap C (in a non-contact manner), whereby the brim 52 can be prevented from interfering with the substrate W, and the precursor can be effectively suppressed from heading toward the peripheral edge wp of the substrate W.
Returning to fig. 1, the frame member elevating unit 60 includes a plurality of unit elevating mechanisms 61 for supporting the lower surface of the outer peripheral portion 51 of the frame member 50, and each unit elevating mechanism 61 is operated in conjunction with each other under the control of the control unit 70. Thus, the frame member elevating unit 60 elevates the frame member 50 in the vertical direction (height direction) while supporting the frame member 50 in the horizontal direction. For example, the frame member elevating unit 60 includes a total of four unit elevating mechanisms 61 to support two portions spaced apart at a predetermined interval in one long side of the frame member 50 and two portions spaced apart at a predetermined interval in the other long side of the frame member 50.
Each unit elevating mechanism 61 includes a support column 62 (movable portion) detachably contacting the frame member 50, a guide tube 63 guiding the elevation of the support column 62, and a mechanism main body 64 for raising and lowering the support column 62.
The support column 62 has a support plate 65 at an upper end thereof, which contacts the lower surface of the outer peripheral portion 51 of the frame member 50. The support plate 65 is formed in a flat disk shape on the upper surface thereof contacting the frame member 50. The support tray 65 is lifted and lowered by the mechanism main body 64 between an upper limit position (carrying-in/carrying-out standby position) higher than the placement surface 411 and closer to the shower head 21 and a lower limit position (reference position) lower than the step surface 412 and closer to the bottom wall 33. When the support tray 65 is displaced to a position higher than the step surface 412, the outer peripheral portion 51 of the frame member 50 is supported, and on the other hand, when the support tray 65 is displaced to a position lower than the step surface 412, the support tray is separated from the frame member 50 supported by the step surface 412. The guide tube 63 is fixed to the opening 33b provided in the bottom wall 33, and guides the raising and lowering of the support 62 along the inner wall on the axial center side.
Various mechanisms (such as a cylinder mechanism, a ball screw mechanism, and a motor and rack mechanism) capable of raising and lowering the support column 62 can be applied to the mechanism main body 64. For example, when a cylinder mechanism is applied as the mechanism main body 64, the strut 62 as a rod is slid by a hydraulic cylinder or an air cylinder. When a ball screw mechanism is applied as the mechanism main body 64, the ball screw is rotated by driving of the motor, and the support column 62 coupled to a nut provided on the ball screw is slid. When a mechanism including a motor and a rack is applied as the mechanism main body 64, the support column 62 formed of the rack is slid by driving of the motor.
The frame member elevating unit 60 electrically connects each mechanism main body 64 to the power distribution driving unit 66. The power distribution driving unit 66 operates (interlocks) the mechanism bodies 64 by supplying power pulses corresponding to command signals from the control unit 70 to the mechanism bodies 64. The distribution drive unit 66 recognizes the height position of the frame member 50 (each support plate 65) by monitoring the power pulse supplied to each mechanism main body 64, and moves the frame member 50 to the target position based on the recognition result.
The control unit 70 of the substrate processing apparatus 1 is a control computer having one or more processors 71, a memory 72, an input/output interface not shown, and an electronic circuit. The control unit 70 includes a keyboard, an input device such as a mouse, a display device such as a display for visually displaying the operation status of the substrate processing apparatus 1, and a user interface (not shown) such as an output device such as a printer, for performing input operations of commands.
The control unit 70 controls the operations of the respective components (e.g., the high-frequency power source 32, the gas supply unit 23, the exhaust unit 34, the lift pin lifting mechanism 44, the heater driving unit 46, the frame member lifting unit 60, etc.) of the substrate processing apparatus 1 to perform substrate processing. The one or more processors 71 are one or a combination of plural CPUs, ASICs, FPGAs, circuits formed of a plurality of discrete semiconductors, and the like. The memory 72 includes a nonvolatile memory and a volatile memory, and forms a storage section of the control section 70. Further, a portion of the memory 72 may be built into more than one processor 71.
The processor 71 executes predetermined processing in accordance with the program and the process (process recipe) stored in the memory 72. The control contents of the substrate processing apparatus 1 for the process conditions are set in the process. The control contents include, for example, a gas flow rate, a pressure in the processing container 10, a temperature of the stage main body 41, a process time, and the like. The manufacturing process and the like may be implemented by being installed in a storage medium readable by a computer, such as a CD-ROM, a DVD, or a memory card, and then read out to the control unit 70.
Fig. 3 is a sectional view showing a state in which the frame member 50 is disposed at the preheating position HP. Next, the influence of the heat of the stage 40 on the frame member 50 will be described with reference to fig. 2 and 3.
The frame member 50, which is a component of the substrate processing apparatus 1, is affected by heat from the stage 40. For example, in a state where the temperature of the frame member 50 is relatively lower than the temperature of the stage main body 41 by heating the stage main body 41 by the heater wire 45, the frame member 50 (the outer peripheral portion 51 and the eaves portion 52) is deformed so as to extend outward in the horizontal direction under the influence of heat from the stage 40. Thus, since there are a shielding region where the peripheral edge wp of the substrate W is shielded by the frame member 50 having a temperature relatively lower than the temperature of the stage main body 41 and a large temperature difference from the stage 41, and a shielding region where the peripheral edge wp of the substrate W is shielded by the frame member 50 having no temperature difference from the stage main body, the shielding regions become uneven. If the stage 40 is deformed by a change in the temperature of the frame member 50, film formation unevenness occurs due to a change in the shielding region, and the accuracy of substrate processing is lowered.
If the frame member 50 is deformed in a state where the frame member 50 and the stage 40 are in contact with each other, friction is generated between the stage 40 and the frame member 50 due to the difference in material between the stage 40 and the frame member 50. When scratches, irregularities, or the like occur in the stage 40 or the frame member 50 due to the friction, the relative position of the eaves 52 with respect to the substrate W (for example, the gap C) may change, which may affect the substrate processing. In addition, the eaves 52 may come into contact with the substrate W. Although it is also conceivable to arrange the heater on the frame member 50 side, it is difficult to attach the heater on the frame member 50 side because the frame member 50 is in contact with the stage 40 and the support tray 65 is separated from the frame member 50 when the support tray 65 is displaced to a position lower than the step surface 412.
Therefore, the control unit 70 according to the present embodiment performs the following preheating method before the film formation is performed in the substrate processing apparatus 1: the frame member 50 is positioned at the preheating position HP which is not in contact with the stage 40 and is close to the stage 40, and the frame member 50 is preheated by the radiant heat of the stage 40. By urging the frame member 50 to deform outward in the horizontal direction before the preheated frame member 50 comes into contact with the stage 40, it is possible to avoid deformation of the frame member 50 after coming into contact with the stage 40.
Next, a functional part of the control part 70 for carrying out the preheating method will be described with reference to fig. 4. Fig. 4 is a block diagram showing functional blocks of the control unit 70 for implementing the preheating method.
The control unit 70 includes a stage temperature adjusting unit 80, an initial control unit 81, a preheating condition determining unit 82, a preheating executing unit 83, a preheating invalidation monitoring unit 84, an interlocking unit 85, a substrate processing determining unit 86, and a substrate processing control unit 87.
The stage temperature adjusting unit 80 adjusts the temperature of the stage 40 based on the target temperature of the stage 40 set by the user or the process. At this time, the stage temperature adjusting unit 80 adjusts the power supply of the heater driving unit 46 based on the measured temperature acquired from the temperature sensor 47 so that the temperature of the stage 40 matches the target temperature.
The initial control unit 81 is a functional unit for performing initial operations of the respective components before substrate processing in the substrate processing apparatus 1. The initial control unit 81 drives the mechanism main body 64 of each unit elevating mechanism 61 to lower the support column 62 to a lower limit position (reference position) and align the height position of the support tray 65 with respect to the reference position (zero point calibration) in the initial operation of the frame member 50 and the frame member elevating unit 60.
It is preferable that the initial control unit 81 immediately raises the frame member 50 after the zero point calibration in which the support post 62 reaches the lower limit position. Thus, at the initial operation of the frame member elevating unit 60, the frame member 50 comes into contact with the step surface 412 as the frame member elevating unit 60 descends, but the initial operation is performed for a short time. For example, about 3 seconds after the contact, the initial control unit 81 operates the frame member elevating unit 60 to raise the support column 62, thereby raising the frame member 50 from the step surface 412. Thus, the substrate processing apparatus 1 can suppress the deformation of the frame member 50 during the period in which the frame member 50 having a temperature difference with the stage main body 41 contacts the stage main body 41 at the time of initial control.
After the zero point calibration and while the other structure is performing the initial operation, the initial control unit 81 may dispose the frame member 50 at any height position as long as the frame member 50 does not contact the step surface 412. Alternatively, the initial control unit 81 may place the frame member 50 at the preheating position HP (see fig. 3) and may wait for the initial operation of another configuration. This enables the substrate processing apparatus 1 to shorten the time for the preheating process. Further, the control unit 70 may perform zero-point calibration at the end of the initial operation, and immediately after the zero-point calibration, the operation may be shifted to the operation of the warm-up executing unit 83 (warm-up of the frame member 50).
The warm-up condition determining section 82 determines whether or not to warm up the frame member 50. For example, the control section 70 outputs frame member screen information 90 for implementing the method of preheating the frame member 50 to the display device of the control section 70, and preheats the frame member 50 based on the manual operation by the user.
Fig. 5 is a diagram illustrating frame member screen information 90 displayed on the display device. As shown in fig. 5, the frame member screen information 90 includes a button 91 for setting the operation of the frame member 50 during substrate processing, a button 92 for setting the standby position for loading and unloading, a button 93 for designating various positions of the frame member 50, and a button 94 for manually performing preheating. When the button 93 for specifying the position of the frame member 50 is operated, the control portion 70 displays setting screen information (not shown) such as the warm-up position HP. When the button 94 for manually performing the warm-up is operated, the control unit 70 performs the warm-up of the frame member 50 under the control of the warm-up execution unit 83 described later.
Returning to fig. 4, the preheating condition determining unit 82 stores a plurality of preheating conditions for preheating the frame member 50 in advance, and automatically performs the preheating of the frame member 50 when any one of the plurality of preheating conditions is satisfied, and does not perform the preheating of the frame member 50 when all of the plurality of preheating conditions are not satisfied. For example, the following [ a ] to [ c ] can be mentioned as the plurality of preheating conditions.
[a] The initial operation is performed when the operation of the substrate processing apparatus 1 is started (at the time of startup) or when the operation is restarted.
[b] The temperature of the stage 40 is changed based on an event such as a user operation, an operation of the substrate processing apparatus 1, or an occurrence of an abnormality.
[c] The preheat invalidity of the block member 50 is recognized (the preheat invalidity flag F2 of the status register is 1).
The warm-up executing unit 83 moves the frame member 50 relative to the step surface 412 to position the frame member 50 at the set warm-up position HP (see also fig. 3). The preheating position HP is a position where the frame member 50 does not interfere with the stage 40 even if the frame member 50 is deformed, and is a position where the frame member 50 can satisfactorily receive the radiant heat of the stage 40. The distance X separating the preheating position HP from the step surface 412 of the stage main body 41 is shorter than the distance D between the mounting surface 411 and the step surface 412. The actual separation distance X of the preheating position HP is preferably set in advance by experiments, simulations, or the like, and is preferably set in a range of, for example, about 0.3mm to 3 mm. Alternatively, as described above, the separation distance X of the warm-up position HP may be set by the user via the setting screen information.
The preheating executing unit 83 may be configured to automatically change the preheating position HP in accordance with the temperature of the stage 40. For example, the preheating executing unit 83 stores correspondence information (not shown) that associates the temperature of the stage 40 with the preheating position HP, and sets the preheating position HP by referring to the temperature of the stage 40 measured by the temperature sensor 47 and the correspondence information. That is, when the temperature of the stage 40 is high, the preheating position HP is set to a first distance from the step surface 412, and when the temperature of the stage 40 is low, the preheating position HP is set to a second distance from the step surface 412, which is shorter than the first distance.
The preheating execution unit 83 automatically starts the operation upon receiving the determination (for example, information of the end of the initial operation) that the preheating condition is satisfied by the preheating condition determination unit 82, and operates the frame member elevating unit 60 to dispose the frame member 50 at the preheating position HP. At this time, the control unit 70 monitors the current height position of the frame member 50 by acquiring the operation state of the frame member elevating unit 60. The control unit 70 displays the position of the support tray 65 and the position of the frame member 50 with respect to the step surface 412 in the position information area 95 in the frame member screen information 90 shown in fig. 5. In fig. 5, an axis position column 951 of the position information area 95 is a relative distance of the support tray 65 with respect to the reference position, and a frame member position column 952 of the position information area 95 is a relative distance of the frame member 50 with respect to the step surface 412.
After the frame member 50 is disposed at the preheating position HP, the preheating executing portion 83 waits the frame member 50 at the preheating position HP until a preheating completion time is reached at which the temperature of the frame member 50 can be sufficiently raised. The preheating completion time is also dependent on the temperature of the stage 40 and the preheating position HP, and is preferably set to about 3 seconds to 60 seconds, for example. The preheating completion time can be automatically changed according to the temperature of the stage 40 and the preheating position HP. For example, the preheating execution unit 83 stores correspondence information (not shown) that associates the temperature of the stage 40 with the preheating position HP by the preheating completion time, sets the preheating completion time by referring to the correspondence information, and counts the time up to the preheating completion time.
During the warm-up of the frame member 50, the warm-up execution unit 83 sets a warm-up incomplete flag F1 of the status register indicating the status information of the frame member 50 to "on" (sets the warm-up incomplete flag F1 from 0 to 1), and sets the warm-up incomplete flag F1 from 1 to 0 after the warm-up of the frame member 50 is completed. During the warm-up period, the warm-up execution unit 83 monitors the warm-up state (elapsed time), and displays the elapsed time in a warm-up information area 96 in the frame member screen information 90 shown in fig. 5, for example. The warm-up information area 96 includes a status field 961 indicating the current status of the execution (warm-up is not completed), warm-up is completed, warm-up is not performed, and the like, a warm-up time field 962 indicating the elapsed time of the warm-up of the frame member 50, a cooling time field 963 indicating the elapsed time of the temperature decrease of the frame member 50, and the like.
The substrate processing apparatus 1 may further include a detection unit (not shown) for detecting the temperature of the frame member 50, and may perform determination of execution, determination of termination, and the like of the preheating of the frame member 50 based on the temperature detected by the detection unit. Further, when the substrate processing apparatus 1 is in operation (in production operation), the controller 70 preferably keeps the frame member 50 disposed at the preheating position HP in a standby state at the preheating position HP even if the preheating completion time elapses without transferring the substrate W to the stage 40. That is, even if the warm-up unfinished flag F1 is 0, the frame member 50 is disposed at the warm-up position HP. This can suppress an unexpected drop in the temperature of the frame member 50 after completion of the warm-up.
When the substrate processing apparatus 1 is operating, the preheating invalidation monitoring section 84 monitors preheating invalidation in a state where the temperature of the frame member 50 after the temporary preheating is lowered. The preheating failure monitoring unit 84 acquires the height position (vertical position) of the frame member 50 from, for example, the power distribution driving unit 66 and the like, and measures the time when the frame member 50 is positioned at a position (for example, a carrying-in/carrying-out standby position or the like) higher than the preheating position HP with respect to the stage 40 and at which the temperature of the frame member 50 is lowered.
Fig. 6 is a diagram illustrating a position information area and warm-up information when monitoring warm-up is invalid. In the position information area 95 shown in fig. 6, the frame member position column 952 is a large value and indicates a position where a temperature drop of the frame member 50 occurs. In addition, the cooling time column 963 of the warm-up information area 96 shown in fig. 6 indicates the time during which the warm-up is being measured.
When recognizing that the elapsed time is longer than the preset warm-up ineffective time, the warm-up ineffective monitoring section 84 determines that the temperature of the frame member 50 has decreased, that is, that the warm-up of the frame member 50 is ineffective. The preheating-ineffective time also depends on the temperature in the processing space 14a (the temperature of the stage 40), and is set to a value of 3 minutes or more, for example. The preheating ineffective time can be automatically changed according to the temperature in the processing container 10 or the stage 40. When determining that the warming of the frame member 50 is invalid, the warming-up invalidity monitoring unit 84 sets the warming-up invalidity flag F2 to on (sets the warming-up invalidity flag F2 from 0 to 1).
When the warm-up disable flag F2 is set to 1, the control unit 70 switches the state display of the warm-up completion to the state display of the non-execution warm-up in the state field 961 of the warm-up information area 96. Then, the control unit 70 operates the preheating execution unit 83 again to preheat the frame member 50 again. For example, when the substrate W is not carried in or out, the control unit 70 operates the frame member elevating unit 60 under the control of the preheat actuator 83 to place the frame member 50 at the preheat position HP. When the warm-up execution unit 83 starts warm-up, the warm-up invalidation monitoring unit 84 sets the warm-up invalidation flag F2 from 1 to 0. On the other hand, the warm-up execution unit 83 sets the warm-up incompletion flag F1 from 0 to 1.
Returning to fig. 4, when the preheating unfinished flag F1 or the preheating invalid flag F2 is 1 (preheating unfinished, preheating invalid, etc.), the interlocking section 85 of the control section 70 performs the preheating-time interlocking. For example, in the interlock at the time of warm-up, the interlock portion 85 prohibits the frame member 50 from contacting the step surface 412 of the stage 40 except for the initial operation. For example, the interlocking unit 85 inhibits the frame member 50 from contacting the step surface 412 by stopping the operation of the functional units other than the warm-up execution unit 83 in the software. Alternatively, the interlocking portion 85 may mechanically prevent the frame member 50 from contacting the step surface 412 by contacting the frame member 50 with an insertion member or the like.
When the preheating unfinished flag F1 or the preheating invalid flag F2 is 1, the interlock section 85 prohibits the substrate processing (process execution). For example, when the substrate processing is prohibited, the substrate processing apparatus 1 prohibits the carrying-in of the substrate W, the supply of the gas into the processing container 10, the operation of the high-frequency power supply 32, and the like.
The interlocking section 85 may perform contact-time interlocking for prohibiting a change in the temperature of the stage 40 in a state where the frame member 50 is brought into contact with the stage 40. The stage temperature can be changed by stopping heating of the heater wire 45 and by making the inside of the processing container 10 vacuum. This can prevent the frame member 50 from being deformed while the frame member 50 is held in contact with the step surface 412 of the stage 40 due to a temperature change received from the step surface 412.
In addition, when the temperature of the stage 40 needs to be changed, the controller 70 may perform a release operation of floating the frame member 50 from the step surface 412, and then change the temperature of the stage 40. By this release operation, the substrate processing apparatus 1 can reliably avoid friction between the stage 40 and the frame member 50, and can smoothly change the temperature of the stage 40.
The substrate processing determining unit 86 of the control unit 70 determines whether or not the substrate processing is performed by determining whether or not the substrate processing performing condition is satisfied. For example, the substrate processing determining unit 86 sets the condition that the interlock unit 85 is not interlocked (the preheating unfinished flag F1 is 0 and the preheating invalid flag F2 is 0) as the condition for performing the substrate processing. Further, as other conditions for performing the substrate treatment, there may be mentioned an event such as the substrate treatment being performed in the manufacturing process, the substrate W being prepared to be conveyed by the conveying device, and no abnormality occurring.
When the substrate processing determining unit 86 determines that the execution condition is satisfied, the substrate processing control unit 87 of the control unit 70 controls each configuration of the substrate processing apparatus 1 to execute the substrate processing. Specifically, the substrate processing controller 87 moves up the preheated frame member 50 to dispose the frame member 50 at the carrying in/out standby position, and moves down the frame member 50 to contact the step surface 412 of the stage 40 after the substrate W is carried in to the mounting surface 411. The substrate processing controller 87 sets the inside of the processing container 10 to a predetermined vacuum atmosphere, supplies a gas to the processing space 14a, and turns the gas into plasma, thereby performing actual substrate processing by supplying a precursor in the plasma to the substrate W. The substrate processing includes film formation processing, etching processing, and the like using a CVD method.
The substrate processing apparatus 1 according to one embodiment is basically formed as described above, and the operation thereof will be described below with reference to fig. 7 and 8. Fig. 7 is a flowchart showing a method of preheating the frame member 50. Fig. 8 is a flowchart showing a substrate processing routine.
The substrate processing apparatus 1 performs a preheating method of preheating the frame member 50 during operation (e.g., during startup or operation). In the execution of the preheating method, the stage temperature adjusting unit 80 of the control unit 70 controls the heater driving unit 46 to adjust the temperature of the stage 40 so that the temperature of the stage 40 becomes the target temperature of the stage 40 set by the user or the process (step S1).
The initial control unit 81 of the control unit 70 controls initial operations of the respective components of the substrate processing apparatus 1 (step S2). In the initial operation of the frame member elevating unit 60, the initial control unit 81 lowers the support columns 62 of the respective unit elevating mechanisms 61 to the lower limit position, thereby aligning the zero position of the support tray 65. The substrate processing apparatus 1 may perform initial operation control (step S2) and temperature adjustment of the stage 40 (step S1) at the same timing.
Then, the warm-up condition determining unit 82 of the control unit 70 checks the warm-up condition for warming up the frame member 50, and determines whether or not the warm-up condition is satisfied (step S3). If the warm-up condition is not satisfied in step S3 (no in step S3), the process proceeds to step S10 by skipping steps S4 to S9, and the warm-up of the frame member 50 is not performed.
In step S3, when the warm-up condition is satisfied (step S3: yes), the warm-up execution unit 83 of the control unit 70 sets the warm-up unfinished flag F1 to 1 (step S4). The interlock portion 85 performs the warm-up interlock when recognizing that the warm-up incompletion flag F1 is 1. The interlock portion 85 performs, as described above, the interlock for prohibiting the frame member 50 from coming into contact with the stage 40 and prohibiting the processing of the substrate W during the preheating interlock, and restricts the operation (step S5).
Then, the preheating executing unit 83 controls the operation of the frame member elevating unit 60 to place the frame member 50 at the preheating position HP spaced apart from the step surface 412 of the stage 40 (step S6).
The preheating execution unit 83 preheats the frame member 50 by supplying the heat radiated from the stage 40 to the frame member 50 while maintaining the state in which the frame member 50 is disposed at the preheating position HP (step S7).
During the execution of step S7, the warm-up executing unit 83 counts the time from the time point when the frame member 50 is disposed at the warm-up position HP, and determines whether or not the standby time at the warm-up position HP reaches the warm-up completion time (step S8). When the standby time does not reach the warm-up completion time (no in step S8), the warm-up execution unit 83 returns to step S7 to continue the warm-up of the frame member 50. On the other hand, when the standby time reaches the preheating completion time (step S8: "YES"), the preheating execution unit 83 recognizes that the temperature difference between the stage 40 and the frame member 50 has disappeared, returns the preheating completion flag F1 to 0, and completes the preheating (step S9). Based on the preheating unfinished flag F1 becoming 0, the interlock portion 85 releases the interlock of the operation of contacting the frame member 50 with the step surface 412 and the substrate processing.
After completion of the preheating, the substrate processing determination unit 86 of the control unit 70 determines whether or not to proceed to the substrate processing by confirming the process, the installation state of the substrate W with respect to the conveyance device, the failure state, and the like (step S10). If the process does not proceed to the substrate processing (step S10: no), the control unit 70 keeps the frame member 50 standing by at the preheating position HP (step S11), and returns to step S10.
On the other hand, when the process proceeds to the substrate processing (step S10: NO), the substrate processing control unit 87 of the control unit 70 performs the above-described substrate processing operation (substrate processing routine) (step S12).
As shown in fig. 8, in the substrate processing routine, the substrate processing control unit 87 first controls the operation of the frame member elevating unit 60 to place the frame member 50 at the carrying in/out standby position (step S21). In this state, the substrate processing controller 87 carries the substrate W into the processing container 10 and places the substrate W on the placement surface 411 of the stage 40 in conjunction with the conveyance device (step S22).
Thereafter, the substrate processing control unit 87 controls the operation of the frame member elevating unit 60 to lower the frame member 50 relative to the stage 40 and the substrate W, and brings the lower surface 511 of the outer peripheral portion 51 of the frame member 50 into contact with the step surface 412 of the stage 40 (step S23). Thereby, the eaves 52 of the frame member 50 cover the upper side of the edge of the substrate W without contacting the substrate W.
Thereafter, the substrate processing controller 87 sets the inside of the processing container 10 to a predetermined vacuum atmosphere, supplies a gas to the processing space 14a, and turns the gas into plasma, thereby performing actual substrate processing by supplying a precursor in the plasma to the substrate W (step S24).
After the substrate processing, the substrate processing controller 87 operates the frame member elevating unit 60 to raise the frame member 50 to the loading/unloading standby position (step S25), and then loads the processed substrate W out of the processing container 10 (step S26). The substrate processing determining unit 86 then determines whether or not to continue the substrate processing (step S27), and if it is determined that the substrate processing is completed (step S27: no), the processing flow is terminated. On the other hand, when the substrate processing is continued (yes in step S27), the substrate processing determining unit 86 determines whether or not the substrate W can be transported into the processing container 10 (step S28). When the substrate W can be carried (yes in step S28), the substrate processing control unit 87 returns to step S22 while keeping the frame member 50 at the carrying-in/out standby position, and repeats the same operation as the operation after carrying in the substrate W. The time for the loading/unloading operation of the substrate W to/from the mounting surface 411 is not a time (shorter than the preheating ineffective time) to the extent that the temperature of the frame member 50 is greatly lowered, and is, for example, about several tens of seconds to two minutes.
On the other hand, when the substrate W cannot be immediately transported (no in step S28), the preheat failure monitoring unit 84 counts a time and determines whether or not the measurement time is longer than the preheat failure time (step S29). When the measurement time is shorter than the warm-up ineffective time (step S29: no), the process returns to step S28, and the conveyance of the substrate W is repeatedly monitored. When the measurement time is longer than the warm-up ineffective time (yes in step S29), the warm-up ineffective monitoring unit 84 determines that the warm-up is ineffective and sets the warm-up ineffective flag F2 to 1 (step S30).
When the warm-up invalidation flag F2 is 1, the warm-up condition of step S3 is established. Therefore, the warm-up execution unit 83 of the control unit 70 executes the processing flow after step S4 again. When returning to step S4, the control unit 70 sets the warm-up disable flag to 0, and sets the warm-up incomplete flag to 1. In addition, when the substrate W cannot be transported into the processing container 10, the control unit 70 may move the frame member 50 to the preheating position HP to wait for the preheating ineffective time, thereby preheating the frame member 50. This can favorably suppress a decrease in the temperature of the frame member 50. When the substrate W can be transported, the controller 70 raises the frame member 50 at the preheat position HP to the carry-in/out standby position again.
As described above, the method of preheating the components and the substrate processing apparatus 1 can appropriately preheat the frame member 50, which is a component that can contact the stage 40 and can move relative to the stage 40. In addition, the method of preheating the components and the substrate processing apparatus 1 can prevent the deformation of the frame member 50 in a state where the frame member 50 is in contact with the stage 40 by causing the frame member 50 to deform in accordance with the temperature change by preheating the frame member 50. Therefore, the relative position of the frame member 50 with respect to the substrate W on the stage 40 becomes stable, and the uniformity of the process with respect to the substrate W can be improved.
In the step of preheating the component, the component (frame member 50) is kept on standby at the preheating position HP until a preset preheating completion time elapses. Thus, the method of preheating the component can adjust the temperature of the frame member 50 during the preheating process until the temperature difference between the frame member 50 and the stage 40 is sufficiently eliminated.
Further, the step of preheating the component includes the following steps: the time when the measurement member (frame member 50) is located farther from the stage 40 than the preheating position HP is, whether or not the preheating disabling time has elapsed is determined, and when the preheating disabling time has elapsed, the process of recognizing the preheating of the member as disabled and preheating the member is performed again. Thus, the preheating method of the component can easily re-preheat the component as needed even when the component is temporarily preheated.
The substrate processing apparatus 1 further includes a component lifting/lowering unit (frame member lifting/lowering unit 60) for lifting/lowering a component (frame member 50) by lifting/lowering a movable unit (support tray 65) for detachably supporting the component, and the following initial operations are performed before the step of preheating the component: the movable portion is lowered to bring the member into contact with the stage 40, whereby the member is separated from the movable portion and the movable portion is brought into agreement with the reference position. Thus, the method for preheating the components can accurately control the positions of the components when the frame member 50 is moved up and down, and can more appropriately preheat the components.
The stage 40 has a contact surface (step surface 412) that contacts the member (frame member 50), and the preheating position HP is set within a range of 0.3mm to 3mm from the contact surface. Thus, the method for preheating the components can efficiently adjust the temperature of the components positioned at the preheating position HP.
Further, while the step of preheating the component is performed, a preheating interlock step of restricting the operation of the substrate processing apparatus 1 is provided. Thus, the preheating method of the component can perform the preheating process more safely.
Further, as a restriction of the operation in the interlock at the time of warm-up, contact of the component (frame member 50) with the stage 40 is prohibited. Thus, the preheating method of the component can reliably prevent the component whose preheating has not been completed from contacting the stage 40.
Further, as a restriction of the operation in the interlock at the time of preheating, the processing of the substrate W is prohibited. In this way, in the preheating method of the member (frame member 50), when there is a member whose preheating is not completed, the substrate W is not processed, and the member is prevented from rubbing against the stage 40 or the substrate W.
Further, while the member (frame member 50) is in contact with the stage, a contact-time interlock is performed that prohibits a temperature change of the stage 40. Thus, the method of preheating the components can suppress the deformation of the components contacting the stage 40 according to the temperature change of the stage 40.
The member is a frame member 50 having a brim 52, and the brim 52 covers an upper side of a peripheral edge wp of the substrate W placed on the stage 40 in a state where the member is in contact with the stage 40. Thus, the preheating method of the member can stably cover the peripheral edge of the substrate W by the eaves 52 of the preheated frame member 50.
In addition, one embodiment of the present disclosure is a substrate processing apparatus 1 including a stage 40 on which a substrate W is placed, and a member (frame member 50) that is capable of contacting the stage 40 and is capable of moving relative to the stage 40, the substrate processing apparatus 1 including a control portion 70 that controls movement of the member, the control portion 70 positioning the member at a preheating position HP that is not in contact with the stage 40, preheating the member by radiant heat from the stage 40, and bringing the preheated member into contact with the stage 40. Thus, the substrate processing apparatus 1 can appropriately preheat the components and improve the uniformity of processing on the substrate W.
The method for preheating the frame member 50 and the substrate processing apparatus 1 according to the embodiment disclosed herein are not limited to the examples, but are illustrative in all respects. The embodiments can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The matters described in the above embodiments may have other configurations within the scope of the invention, and may be combined within the scope of the invention.
The substrate processing apparatus 1 of the present disclosure can also be applied to any type of apparatus such as an ALD (Atomic Layer Deposition) apparatus, a CCP (capacitive Coupled Plasma), an ICP (inductive Coupled Plasma), an RLSA (Radial Line Slot Antenna), an ECR (Electron Cyclotron Resonance Plasma), and a HWP (Helicon Wave Plasma).
Description of the reference numerals
1: a substrate processing apparatus; 10: a processing vessel; 40: an object stage; 50: a frame member; 60: a frame member lifting unit; 70: a control unit; HP: a preheating position; w: a substrate.

Claims (11)

1. A method of preheating a component which is capable of contacting a stage of a substrate processing apparatus on which a substrate is placed and which is capable of moving relative to the stage, the method comprising:
positioning the component in a preheating position out of contact with the stage, the component being preheated by radiant heat from the stage; and
bringing the part preheated in the step of preheating the part into contact with the stage.
2. The preheating treatment method of a member according to claim 1,
in the step of preheating the component, the component is caused to stand by at the preheating position until a preset preheating completion time elapses.
3. The preheating treatment method of a member according to claim 1 or 2,
the process of preheating the component comprises the following steps: measuring a time during which the component is located farther from the stage than the preheating position, determining whether or not the measurement time has elapsed a preheating invalidation time,
and recognizing the preheating of the component as being invalid when the measurement time has elapsed by the preheating invalidity time, and performing the step of preheating the component again.
4. The preheating treatment method of a member according to any one of claims 1 to 3,
the substrate processing apparatus includes a member lifting/lowering unit that lifts and lowers the member by lifting and lowering a movable unit that detachably supports the member,
performing the following initial actions prior to the step of preheating the component: the movable portion is lowered to bring the member into contact with the stage, thereby disengaging the member from the movable portion and aligning the movable portion with a reference position.
5. The preheating treatment method of a member according to any one of claims 1 to 4,
the stage has a contact surface for contacting the component,
the preheating position is set within the range of 0.3 mm-3 mm away from the contact surface.
6. The preheating treatment method of a member according to any one of claims 1 to 5,
and a preheating interlock for limiting the operation of the substrate processing apparatus during the step of preheating the component.
7. The preheating treatment method of a member according to claim 6,
as a limitation of the action in the interlock at the time of the warm-up, the component is prohibited from contacting the stage.
8. The preheating treatment method of a member according to claim 6 or 7,
the operation of the interlock during preheating is restricted, and the substrate is prohibited from being processed.
9. The preheating treatment method of a member according to any one of claims 1 to 8,
during the step of bringing the member into contact with the stage, a contact-time interlock is performed that prohibits a change in temperature of the stage.
10. The preheating treatment method of a member according to any one of claims 1 to 9,
the member is a frame member having an eaves portion, and the eaves portion cover is placed above a peripheral edge of the substrate of the stage in a state where the member is in contact with the stage.
11. A substrate processing apparatus having a stage on which a substrate is placed and a member which can contact the stage and can move relative to the stage,
further having a control section that controls movement of the member,
wherein the control part positions the component at a preheating position not in contact with the stage, and preheats the component by radiant heat from the stage,
the control unit brings the preheated component into contact with the stage.
CN202210793940.5A 2021-07-13 2022-07-05 Method for preheating parts and substrate processing apparatus Pending CN115621158A (en)

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JP2021115897A JP2023012321A (en) 2021-07-13 2021-07-13 Component pre-heating treatment method and substrate treatment apparatus
JP2021-115897 2021-07-13

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CN115621158A true CN115621158A (en) 2023-01-17

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05160046A (en) 1991-12-05 1993-06-25 Kokusai Electric Co Ltd Method and device for heating substrate

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