TW202335185A - 記憶體裝置 - Google Patents

記憶體裝置 Download PDF

Info

Publication number
TW202335185A
TW202335185A TW112103680A TW112103680A TW202335185A TW 202335185 A TW202335185 A TW 202335185A TW 112103680 A TW112103680 A TW 112103680A TW 112103680 A TW112103680 A TW 112103680A TW 202335185 A TW202335185 A TW 202335185A
Authority
TW
Taiwan
Prior art keywords
insulator
conductor
oxide
opening
addition
Prior art date
Application number
TW112103680A
Other languages
English (en)
Chinese (zh)
Inventor
山崎舜平
大貫達也
加藤清
國武寛司
方堂涼太
Original Assignee
日商半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商半導體能源研究所股份有限公司 filed Critical 日商半導體能源研究所股份有限公司
Publication of TW202335185A publication Critical patent/TW202335185A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
TW112103680A 2022-02-10 2023-02-02 記憶體裝置 TW202335185A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022019463 2022-02-10
JP2022-019463 2022-02-10

Publications (1)

Publication Number Publication Date
TW202335185A true TW202335185A (zh) 2023-09-01

Family

ID=87563756

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112103680A TW202335185A (zh) 2022-02-10 2023-02-02 記憶體裝置

Country Status (4)

Country Link
US (1) US20250159935A1 (https=)
JP (1) JPWO2023152595A1 (https=)
TW (1) TW202335185A (https=)
WO (1) WO2023152595A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI876671B (zh) * 2023-09-18 2025-03-11 台灣積體電路製造股份有限公司 半導體裝置及其形成方法
TWI895023B (zh) * 2024-06-24 2025-08-21 聯華電子股份有限公司 半導體結構及其製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6607681B2 (ja) * 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
JP6545976B2 (ja) * 2014-03-07 2019-07-17 株式会社半導体エネルギー研究所 半導体装置
US11997846B2 (en) * 2018-07-06 2024-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US12283632B2 (en) * 2019-05-10 2025-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP7459079B2 (ja) * 2019-05-23 2024-04-01 株式会社半導体エネルギー研究所 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI876671B (zh) * 2023-09-18 2025-03-11 台灣積體電路製造股份有限公司 半導體裝置及其形成方法
TWI895023B (zh) * 2024-06-24 2025-08-21 聯華電子股份有限公司 半導體結構及其製造方法

Also Published As

Publication number Publication date
US20250159935A1 (en) 2025-05-15
WO2023152595A1 (ja) 2023-08-17
JPWO2023152595A1 (https=) 2023-08-17

Similar Documents

Publication Publication Date Title
JP7741277B2 (ja) 半導体装置
JP7730973B2 (ja) 半導体装置の作製方法
TWI878367B (zh) 半導體裝置
JP7787342B2 (ja) 半導体装置
US20250081539A1 (en) Transistor and electronic device
TW202310425A (zh) 半導體裝置
TW202213796A (zh) 半導體裝置、半導體裝置的製作方法
TW202335185A (zh) 記憶體裝置
US20250056786A1 (en) Semiconductor device, storage device, and method for manufacturing the semiconductor device
TW202326946A (zh) 半導體裝置、記憶體裝置
TW202339171A (zh) 半導體裝置
CN115917038A (zh) 半导体装置的制造方法
CN116097401A (zh) 绝缘膜的改性方法及半导体装置的制造方法
US20230298906A1 (en) Method for manufacturing semiconductor device
US20230326751A1 (en) Manufacturing method of metal oxide
KR20220120577A (ko) 반도체 장치, 반도체 장치의 제작 방법
WO2021053450A1 (ja) 半導体装置
WO2020174315A1 (ja) 半導体装置、および半導体装置の作製方法
TW202341423A (zh) 記憶體裝置
TW202339128A (zh) 電子裝置、電子裝置的製造方法、半導體裝置、半導體裝置的製造方法、記憶體裝置
US20240063028A1 (en) Manufacturing Method Of Semiconductor Device
CN118633362A (zh) 存储装置
WO2023094941A1 (ja) 半導体装置
CN118402329A (zh) 半导体装置、存储装置及半导体装置的制造方法
CN118591879A (zh) 电子装置、电子装置的制造方法、半导体装置、半导体装置的制造方法、存储装置