TW202335134A - 選擇性的熱原子層蝕刻 - Google Patents

選擇性的熱原子層蝕刻 Download PDF

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Publication number
TW202335134A
TW202335134A TW111139238A TW111139238A TW202335134A TW 202335134 A TW202335134 A TW 202335134A TW 111139238 A TW111139238 A TW 111139238A TW 111139238 A TW111139238 A TW 111139238A TW 202335134 A TW202335134 A TW 202335134A
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TW
Taiwan
Prior art keywords
torr
total pressure
acid
metal
seconds
Prior art date
Application number
TW111139238A
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English (en)
Chinese (zh)
Inventor
拉文朵拉 坎婕莉亞
強 瑟巴斯堤案 勒罕
馬汀 Ｅ 麥克布萊爾提
羅納德 波爾史丹
傑拉德 利斯 麥克威廉斯
阮 明 武
Original Assignee
德商馬克專利公司
美商慧盛材料美國有限責任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商馬克專利公司, 美商慧盛材料美國有限責任公司 filed Critical 德商馬克專利公司
Publication of TW202335134A publication Critical patent/TW202335134A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Vapour Deposition (AREA)
TW111139238A 2021-10-19 2022-10-17 選擇性的熱原子層蝕刻 TW202335134A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202163257244P 2021-10-19 2021-10-19
US63/257,244 2021-10-19
US202263366860P 2022-06-23 2022-06-23
US63/366,860 2022-06-23

Publications (1)

Publication Number Publication Date
TW202335134A true TW202335134A (zh) 2023-09-01

Family

ID=84360255

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111139238A TW202335134A (zh) 2021-10-19 2022-10-17 選擇性的熱原子層蝕刻

Country Status (7)

Country Link
US (1) US12590374B2 (https=)
EP (1) EP4419732A1 (https=)
JP (1) JP2024539676A (https=)
KR (1) KR20240089749A (https=)
IL (1) IL311977A (https=)
TW (1) TW202335134A (https=)
WO (1) WO2023066847A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202335134A (zh) 2021-10-19 2023-09-01 德商馬克專利公司 選擇性的熱原子層蝕刻
CN121153106A (zh) * 2023-04-14 2025-12-16 弗萨姆材料美国有限责任公司 含金属材料的气相蚀刻

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5259125B2 (ja) 2006-08-24 2013-08-07 富士通セミコンダクター株式会社 基板処理方法、半導体装置の製造方法、基板処理装置および記録媒体
US9490145B2 (en) 2015-02-23 2016-11-08 Asm Ip Holding B.V. Removal of surface passivation
US9620627B1 (en) * 2015-12-15 2017-04-11 Taiwan Semiconductor Manufacturing Company, Ltd. Field-effect transistors having black phosphorus channel and methods of making the same
WO2017213842A2 (en) * 2016-05-23 2017-12-14 The Regents Of The University Of Colorado, A Body Corporate Enhancement of thermal atomic layer etching
KR102805391B1 (ko) * 2016-12-09 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 열적 원자층 식각 공정
JP2022090148A (ja) * 2019-04-02 2022-06-17 株式会社Adeka 原子層エッチング法用エッチング材料
US11574813B2 (en) * 2019-12-10 2023-02-07 Asm Ip Holding B.V. Atomic layer etching
US20240030037A1 (en) 2020-09-01 2024-01-25 Adeka Corporation Etching method
TW202335134A (zh) 2021-10-19 2023-09-01 德商馬克專利公司 選擇性的熱原子層蝕刻

Also Published As

Publication number Publication date
US20250137141A1 (en) 2025-05-01
EP4419732A1 (en) 2024-08-28
JP2024539676A (ja) 2024-10-29
WO2023066847A1 (en) 2023-04-27
IL311977A (en) 2024-06-01
KR20240089749A (ko) 2024-06-20
US12590374B2 (en) 2026-03-31

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