KR20240089749A - 선택적 열적 원자층 에칭 - Google Patents

선택적 열적 원자층 에칭 Download PDF

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Publication number
KR20240089749A
KR20240089749A KR1020247015988A KR20247015988A KR20240089749A KR 20240089749 A KR20240089749 A KR 20240089749A KR 1020247015988 A KR1020247015988 A KR 1020247015988A KR 20247015988 A KR20247015988 A KR 20247015988A KR 20240089749 A KR20240089749 A KR 20240089749A
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KR
South Korea
Prior art keywords
torr
acid
total pressure
metal
seconds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247015988A
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English (en)
Korean (ko)
Inventor
라빈드라 칸졸리아
장-세바스티앙 렌
마틴 이 맥브리아티
로날드 펠스타인
자레드 리스 맥윌리엄스
응우옌 민 부
Original Assignee
메르크 파텐트 게엠베하
버슘머트리얼즈 유에스, 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 메르크 파텐트 게엠베하, 버슘머트리얼즈 유에스, 엘엘씨 filed Critical 메르크 파텐트 게엠베하
Publication of KR20240089749A publication Critical patent/KR20240089749A/ko
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H01L21/32135—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020247015988A 2021-10-19 2022-10-17 선택적 열적 원자층 에칭 Pending KR20240089749A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202163257244P 2021-10-19 2021-10-19
US63/257,244 2021-10-19
US202263366860P 2022-06-23 2022-06-23
US63/366,860 2022-06-23
PCT/EP2022/078797 WO2023066847A1 (en) 2021-10-19 2022-10-17 Selective thermal atomic layer etching

Publications (1)

Publication Number Publication Date
KR20240089749A true KR20240089749A (ko) 2024-06-20

Family

ID=84360255

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247015988A Pending KR20240089749A (ko) 2021-10-19 2022-10-17 선택적 열적 원자층 에칭

Country Status (7)

Country Link
US (1) US12590374B2 (https=)
EP (1) EP4419732A1 (https=)
JP (1) JP2024539676A (https=)
KR (1) KR20240089749A (https=)
IL (1) IL311977A (https=)
TW (1) TW202335134A (https=)
WO (1) WO2023066847A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202335134A (zh) 2021-10-19 2023-09-01 德商馬克專利公司 選擇性的熱原子層蝕刻
CN121153106A (zh) * 2023-04-14 2025-12-16 弗萨姆材料美国有限责任公司 含金属材料的气相蚀刻

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5259125B2 (ja) 2006-08-24 2013-08-07 富士通セミコンダクター株式会社 基板処理方法、半導体装置の製造方法、基板処理装置および記録媒体
US9490145B2 (en) 2015-02-23 2016-11-08 Asm Ip Holding B.V. Removal of surface passivation
US9620627B1 (en) * 2015-12-15 2017-04-11 Taiwan Semiconductor Manufacturing Company, Ltd. Field-effect transistors having black phosphorus channel and methods of making the same
WO2017213842A2 (en) * 2016-05-23 2017-12-14 The Regents Of The University Of Colorado, A Body Corporate Enhancement of thermal atomic layer etching
KR102805391B1 (ko) * 2016-12-09 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 열적 원자층 식각 공정
JP2022090148A (ja) * 2019-04-02 2022-06-17 株式会社Adeka 原子層エッチング法用エッチング材料
US11574813B2 (en) * 2019-12-10 2023-02-07 Asm Ip Holding B.V. Atomic layer etching
US20240030037A1 (en) 2020-09-01 2024-01-25 Adeka Corporation Etching method
TW202335134A (zh) 2021-10-19 2023-09-01 德商馬克專利公司 選擇性的熱原子層蝕刻

Also Published As

Publication number Publication date
US20250137141A1 (en) 2025-05-01
EP4419732A1 (en) 2024-08-28
JP2024539676A (ja) 2024-10-29
WO2023066847A1 (en) 2023-04-27
IL311977A (en) 2024-06-01
US12590374B2 (en) 2026-03-31
TW202335134A (zh) 2023-09-01

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