TW202335054A - 具有用於直接接合的導電特徵的結構及形成其之方法 - Google Patents
具有用於直接接合的導電特徵的結構及形成其之方法 Download PDFInfo
- Publication number
- TW202335054A TW202335054A TW111148538A TW111148538A TW202335054A TW 202335054 A TW202335054 A TW 202335054A TW 111148538 A TW111148538 A TW 111148538A TW 111148538 A TW111148538 A TW 111148538A TW 202335054 A TW202335054 A TW 202335054A
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- Prior art keywords
- conductive material
- conductive
- less
- bonding
- component
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
- H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
- H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
- H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
- H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
- H10W72/01933—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
- H10W72/01935—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
- H10W72/01938—Manufacture or treatment of bond pads using blanket deposition in gaseous form, e.g. by CVD or PVD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01951—Changing the shapes of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W80/00—Direct bonding of chips, wafers or substrates
- H10W80/301—Bonding techniques, e.g. hybrid bonding
- H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
- H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W80/00—Direct bonding of chips, wafers or substrates
- H10W80/301—Bonding techniques, e.g. hybrid bonding
- H10W80/312—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of electrically conductive pads
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163291285P | 2021-12-17 | 2021-12-17 | |
| US63/291,285 | 2021-12-17 | ||
| US18/066,159 US20230197453A1 (en) | 2021-12-17 | 2022-12-14 | Structure with conductive feature for direct bonding and method of forming same |
| US18/066,159 | 2022-12-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202335054A true TW202335054A (zh) | 2023-09-01 |
Family
ID=86768861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111148538A TW202335054A (zh) | 2021-12-17 | 2022-12-16 | 具有用於直接接合的導電特徵的結構及形成其之方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20230197453A1 (https=) |
| EP (1) | EP4449492A4 (https=) |
| JP (1) | JP2024543728A (https=) |
| KR (1) | KR20240118874A (https=) |
| CN (1) | CN118382923A (https=) |
| TW (1) | TW202335054A (https=) |
| WO (1) | WO2023114878A1 (https=) |
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| TWI822659B (zh) | 2016-10-27 | 2023-11-21 | 美商艾德亞半導體科技有限責任公司 | 用於低溫接合的結構和方法 |
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| TWI837879B (zh) | 2016-12-29 | 2024-04-01 | 美商艾德亞半導體接合科技有限公司 | 具有整合式被動構件的接合結構 |
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| CN116848631A (zh) | 2020-12-30 | 2023-10-03 | 美商艾德亚半导体接合科技有限公司 | 具有导电特征的结构及其形成方法 |
| EP4315411A4 (en) | 2021-03-31 | 2025-04-30 | Adeia Semiconductor Bonding Technologies Inc. | DIRECT BINDING METHODS AND STRUCTURES |
| US12525572B2 (en) | 2021-03-31 | 2026-01-13 | Adeia Semiconductor Bonding Technologies Inc. | Direct bonding and debonding of carrier |
| JP2024528964A (ja) | 2021-08-02 | 2024-08-01 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | ボンデッド構造体用の保護半導体素子 |
| KR20240059637A (ko) | 2021-09-24 | 2024-05-07 | 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 | 능동 인터포저를 가진 결합 구조체 |
| US12604771B2 (en) | 2021-10-28 | 2026-04-14 | Adeia Semiconductor Bonding Technologies Inc. | Direct bonding methods and structures |
| US12563749B2 (en) | 2021-10-28 | 2026-02-24 | Adeia Semiconductor Bonding Technologies Inc | Stacked electronic devices |
| US12557615B2 (en) | 2021-12-13 | 2026-02-17 | Adeia Semiconductor Technologies Llc | Methods for bonding semiconductor elements |
| JP2025500315A (ja) | 2021-12-20 | 2025-01-09 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | ダイパッケージの熱電冷却 |
| US12512425B2 (en) | 2022-04-25 | 2025-12-30 | Adeia Semiconductor Bonding Technologies Inc. | Expansion controlled structure for direct bonding and method of forming same |
| JP2025517291A (ja) | 2022-05-23 | 2025-06-05 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | ボンデッド構造体のための試験用素子 |
| US12506114B2 (en) | 2022-12-29 | 2025-12-23 | Adeia Semiconductor Bonding Technologies Inc. | Directly bonded metal structures having aluminum features and methods of preparing same |
| US12545010B2 (en) | 2022-12-29 | 2026-02-10 | Adeia Semiconductor Bonding Technologies Inc. | Directly bonded metal structures having oxide layers therein |
| US12341083B2 (en) | 2023-02-08 | 2025-06-24 | Adeia Semiconductor Bonding Technologies Inc. | Electronic device cooling structures bonded to semiconductor elements |
| US12598962B2 (en) | 2023-03-14 | 2026-04-07 | Adeia Semiconductor Bonding Technologies Inc. | System and method for bonding transparent conductor substrates |
| KR20250020205A (ko) * | 2023-08-03 | 2025-02-11 | 삼성전자주식회사 | 반도체 칩 구조물 |
| US20250372554A1 (en) * | 2024-05-29 | 2025-12-04 | Adeia Semiconductor Bonding Technologies Inc. | Pad-less hybrid bonding |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9331038B2 (en) * | 2013-08-29 | 2016-05-03 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor interconnect structure |
| US9728521B2 (en) * | 2015-07-23 | 2017-08-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Hybrid bond using a copper alloy for yield improvement |
| US10790262B2 (en) * | 2018-04-11 | 2020-09-29 | Invensas Bonding Technologies, Inc. | Low temperature bonded structures |
| US11011494B2 (en) * | 2018-08-31 | 2021-05-18 | Invensas Bonding Technologies, Inc. | Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics |
| US11244920B2 (en) * | 2018-12-18 | 2022-02-08 | Invensas Bonding Technologies, Inc. | Method and structures for low temperature device bonding |
| US11289421B2 (en) * | 2019-09-26 | 2022-03-29 | Intel Corporation | Methods and structures for improved electrical contact between bonded integrated circuit interfaces |
| US11837296B2 (en) * | 2021-10-19 | 2023-12-05 | Sandisk Technologies Llc | Non-volatile memory with adjusted bit line voltage during verify |
-
2022
- 2022-12-14 US US18/066,159 patent/US20230197453A1/en active Pending
- 2022-12-14 CN CN202280082655.0A patent/CN118382923A/zh active Pending
- 2022-12-14 EP EP22908683.0A patent/EP4449492A4/en active Pending
- 2022-12-14 JP JP2024535512A patent/JP2024543728A/ja active Pending
- 2022-12-14 KR KR1020247023791A patent/KR20240118874A/ko active Pending
- 2022-12-14 WO PCT/US2022/081601 patent/WO2023114878A1/en not_active Ceased
- 2022-12-16 TW TW111148538A patent/TW202335054A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN118382923A (zh) | 2024-07-23 |
| EP4449492A4 (en) | 2025-12-03 |
| WO2023114878A1 (en) | 2023-06-22 |
| JP2024543728A (ja) | 2024-11-22 |
| EP4449492A1 (en) | 2024-10-23 |
| US20230197453A1 (en) | 2023-06-22 |
| KR20240118874A (ko) | 2024-08-05 |
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