TW202334471A - 操作物理氣相沈積設備之方法 - Google Patents
操作物理氣相沈積設備之方法 Download PDFInfo
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- TW202334471A TW202334471A TW111132860A TW111132860A TW202334471A TW 202334471 A TW202334471 A TW 202334471A TW 111132860 A TW111132860 A TW 111132860A TW 111132860 A TW111132860 A TW 111132860A TW 202334471 A TW202334471 A TW 202334471A
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- 238000000034 method Methods 0.000 title claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000000463 material Substances 0.000 claims abstract description 39
- 238000004140 cleaning Methods 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims description 49
- 210000002381 plasma Anatomy 0.000 claims description 49
- 230000008021 deposition Effects 0.000 claims description 44
- 239000010936 titanium Substances 0.000 claims description 33
- 230000008569 process Effects 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052719 titanium Inorganic materials 0.000 claims description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 238000003860 storage Methods 0.000 claims description 9
- 238000001465 metallisation Methods 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 59
- 238000005240 physical vapour deposition Methods 0.000 description 49
- 238000005530 etching Methods 0.000 description 13
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- 238000000992 sputter etching Methods 0.000 description 9
- 238000012546 transfer Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
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- 238000004544 sputter deposition Methods 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- -1 argon ions Chemical class 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
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- 238000010586 diagram Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
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- 229910052760 oxygen Inorganic materials 0.000 description 3
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- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
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- 229910017107 AlOx Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
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- 229920000642 polymer Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910004353 Ti-Cu Inorganic materials 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
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- 229910052804 chromium Inorganic materials 0.000 description 1
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- 239000012535 impurity Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
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- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05147—Copper [Cu] as principal constituent
Abstract
根據本發明,提供一種在一清潔模式中操作一PVD設備以從形成在一半導體基板上之一導電部件移除材料之方法,其包括以下步驟:
將具有形成在其上之該導電部件之該半導體基板定位在該PVD設備之一腔室中之一基板支撐件上;
在該腔室內部署一擋板以將該腔室劃分為該半導體基板及該基板支撐件定位在其中之一第一隔室及該PVD設備之一目標定位在其中之一第二隔室;及
同時在該第一隔室中產生一第一電漿以從該導電部件移除材料,且在該第二隔室中產生一第二電漿以清潔該目標。
Description
本發明係關於一種操作一PVD設備之方法,特定言之係關於一種在一清潔模式中操作一PVD設備以從形成在一半導體基板上之一導電部件移除材料之方法。本發明亦係關於一種能夠在一清潔模式中操作之相關聯PVD設備。
先進封裝技術係半導體製造程序之一至關重要部分,且在推動裝置小型化方面起著關鍵作用。隨著裝置大小持續縮小及接觸件密度增加,歸因於期望裝置大小持續縮小及接觸件密度增加,後端製程(BEOL)處理正受到越來越多之關注。BEOL處理之改良表示增加裝置效率之一潛在途徑。
BEOL處理之一關鍵態樣係在凸塊形成之前,在鋁墊與鈦凸塊下金屬化(UBM)層之間之介面處之一晶圓之封裝側上產生一低電阻接觸。
在沈積Ti-Cu接觸層之前,需要對晶圓進行圖案化。此程序導致鋁墊曝露於大氣且因此氧化。為了形成一良好電接觸,必須在沈積Ti層之前移除此電阻性氧化物層。氧化物層之移除藉由在一預清潔(濺射蝕刻)模組中濺射蝕刻Al墊來達成,此後在真空下將晶圓轉移至一物理氣相沈積(PVD)腔室,在此執行Ti之沈積。
圖1係展示用於執行UBM金屬化程序之類型之一習知先前技術PVD叢集工具之一示意圖。晶圓被裝載至卡匣或前開式晶圓傳送盒(FOUP)中,且放置在真空卡匣升降機(VCE)或設備前端模組(EFEM) 1中用於處理。晶圓透過槽閥或預載室(load lock)轉移以進入在真空下操作之一運送模組2。在一典型金屬接觸應用中,晶圓在一預熱站3中脫氣,其中從晶圓移除揮發性材料,且將使晶圓接近所需溫度。接著,將晶圓移動至濺射蝕刻(預清潔)模組4,其中一電漿用於使用一惰性氣體(諸如Ar及或He)濺射清潔晶圓。在此步驟中,從開放鋁接墊移除AlOx。一旦濺射清潔步驟完成,腔室便返回至基本壓力,且晶圓5被轉移至一PVD沈積模組7。透過使用一真空機器人6來達成晶圓在運送模組內之移動。如此項技術中所熟知,PVD沈積至晶圓上通常係藉由在存在一惰性氣體(諸如Ar)之情況下在低壓(通常約1至100毫托)下將一負DC電壓施加至一目標以將目標材料濺射至晶圓表面上來實現。然而,熟練之讀者將瞭解,濺射可使用基本PVD方法之其他熟知變化來達成。商業生產工具可具有數個預熱、濺射蝕刻(預清潔)及PVD沈積模組。由於經預清潔鋁表面非常具反應性,因此曝露於任何含氧氣體將迅速導致在Al接墊上再生長AlOx層。圖2(a)展示一標準先前技術程序之程序序列,其中一脫氣步驟20之後係預清潔濺射蝕刻步驟21。接著,一鈦黏著/障壁層之PVD沈積22之後係一銅晶種層之PVD沈積23。已發現,在預清潔濺射蝕刻步驟21之結束與鈦PVD沈積步驟22之開始之間通常可花費30秒。(圖2(b)展示本發明之一程序序列,下文將對其進行更詳細說明。)
鋁接墊之圖案化通常使用一有機聚合物遮罩(諸如聚醯亞胺遮罩)來實現。不幸地,此引起一重大問題。更特定言之,在預清潔模組中蝕刻晶圓之動作不僅從Al墊清除薄氧化物層,而且亦導致圖案化有機聚合物遮罩層之分解,此將氧化物種(諸如CO)釋放至預清潔(蝕刻)模組中。此程序在圖3中描繪,其展示一鈍化層32上之一鋁接墊30。鋁接墊被聚醯亞胺遮罩34遮蔽。藉由氬離子36之濺射產生氧化物種,諸如CO 38。即使在最有利之情況下,在預清潔(蝕刻)模組與沈積腔室之間轉移晶圓所花費之時間(如上文提及,其通常約30秒)對於在預清潔期間透過遮罩之濺射蝕刻釋放之氧化物種與Al表面反應係綽綽有餘的。此導致在幾秒鐘內在經曝露Al墊上再生長一薄氧化物層。最小化此再生長氧化物層之厚度係最小化接觸電阻之關鍵。
在用於UBM之傳統PVD系統中,已藉由在蝕刻之前延長晶圓之高溫脫氣以移除氣體雜質,藉由在蝕刻程序期間仔細控制晶圓溫度以最小化聚合物分解,及藉由減少蝕刻腔室與沈積腔室之間之轉移時間來控制此問題。然而,此等方法本質上僅能夠改善晶圓上之再生長氧化物層之問題。此等方法皆無法移除在預清潔模組中處理後再生長之氧化物層。
因此,需要一種可在不減小系統生產率之情況下進一步減小接觸電阻之改良處理方法。本發明在其至少一些實施例中解決上述問題、期望及要求。特定言之,本發明在其至少一些實施例中提供一種部分或完全移除上述類型之再生長氧化物層之方式。儘管本發明在鋁金屬化中提供特別優點,然本發明不限於此等應用,且代替地在藉由PVD金屬化之前從金屬部件移除電阻層中找到更普遍應用。
根據本發明之一第一態樣,提供一種在一清潔模式中操作一PVD設備以從形成在一半導體基板上之一導電部件移除材料之方法,其包括以下步驟:
將具有形成在其上之該導電部件之該半導體基板定位在該PVD設備之一腔室中之一基板支撐件上;
在該腔室內部署一擋板(shutter)以將該腔室劃分為該半導體基板及該基板支撐件定位在其中之一第一隔室及該PVD設備之一目標定位在其中之一第二隔室;及
同時在該第一隔室中維持一第一電漿以從該導電部件移除材料,且在該第二隔室中維持一第二電漿以清潔該目標。
可藉由將一RF電信號施加至該基板支撐件來產生該第一電漿。
可藉由將一電信號施加至該目標來產生該第二電漿。施加至該目標之該電信號可為一DC電信號。
從該導電部件移除之該材料可為形成該導電部件之一材料之氧化物。該導電部件可由鋁形成。從該導電部件移除之該材料可為氧化鋁。
該鋁導電部件可為用於該半導體基板之一接墊。
該導電部件可由銅形成。從該銅導電部件移除之該材料可為鈦、鉭、鈦之氮化物或鉭之氮化物之一或多者。
該銅導電部件可為一鑲嵌互連之一組成部分。
一般言之,從該導電部件移除之該材料可為一相對電阻性材料,其中可期望移除該相對電阻層以改良一接觸電阻。
在該腔室內部署該擋板之該步驟可包括將該擋板橫向跨該腔室從一存放位置移動至一部署位置。在該部署位置中,將該腔室劃分為該等第一及第二隔室。可考慮使用其他類型之擋板,諸如旋轉至一部署位置中之擋板。
在同時維持該等第一及第二電漿之該步驟期間,該基板及該擋板可分開達35 mm至60 mm範圍內之一間隙。
該擋板可由鈦或鋁製成。
該方法可包括以下進一步步驟:
縮回該擋板,使得該腔室不再被劃分為該等第一及第二隔室;及
操作該PVD設備以藉由PVD將一導電沈積材料沈積至該導電部件上。
該基板支撐件可在同時維持該等第一及第二電漿之該步驟期間處於一第一位置且在操作該PVD設備以藉由PVD將一導電沈積材料沈積至該導電部件上之該步驟期間處於一第二位置,其中該第二位置比該第一位置更靠近該目標。
藉由PVD沈積至該導電部件上之該導電沈積材料可為鈦。替代地,藉由PVD沈積至該導電部件上之該導電沈積材料可為鉻、TiW、銅、鎳或鈀。
藉由PVD將該導電沈積材料沈積至該導電部件上可為一凸塊下金屬化(UBM)程序之部分。
該半導體基板可為一矽基板,諸如一矽晶圓。
該半導體基板可呈一或多個積體電路之形式。
根據本發明之一第二態樣,提供一種能夠在一清潔模式中操作之PVD設備,其包括:
一腔室,其包括一基板支撐件及一目標;
一擋板,當在使用中具有形成在其上之一導電部件之一半導體基板定位在該基板支撐件上時,該擋板可部署在該腔室內,該擋板經部署以將該腔室劃分為該基板支撐件定位在其中之一第一隔室及該目標定位在其中之一第二隔室;
一第一電漿產生裝置,其用於在該第一隔室中維持一第一電漿以從該導電部件移除材料;
一第二電漿產生裝置,其用於在該第二隔室中維持一第二電漿以清潔該目標;及
一控制器,其經組態以控制使用中之該設備以(i)部署該擋板及(ii)同時在該第一隔室中維持一第一電漿以從該導電部件移除材料,且在該第二隔室中維持一第二電漿以清潔該目標。
該控制器及該基板支撐件可經組態使得該基板支撐件在同時維持該等第一及第二電漿之步驟期間處於一第一位置且在操作該PVD設備以藉由PVD將一導電沈積材料沈積至該導電部件上之步驟期間處於一第二位置,其中該第二位置比該第一位置更靠近該目標。
該PVD設備可進一步包括實質上或完全包圍該目標之一陽極結構,其中在該目標與該陽極結構之間產生該第二電漿。
該擋板可存放在該腔室外部之一存放位置中。該設備可進一步包括用於將該擋板橫向跨該腔室從該存放位置移動至部署該擋板之一部署位置且將該擋板縮回至該存放位置之一裝置。
該擋板可至少在其部署時電接地。
該控制器可經組態以控制該基板支撐件之一位置,使得在同時維持該等第一及第二電漿時,該基板及該擋板分開達35 mm至60 mm範圍內之一間隙。
該擋板可經定大小以在該擋板與該腔室之內壁之間提供一環形間隙,此使上及下隔室兩者能夠被有效及方便地泵抽。另外,該間隙之提供具有與該上隔室中之清潔電漿相關聯之任何優點亦被賦予該下隔室之有益效應。例如,該下隔室中之微粒可透過用從該目標濺射之材料吸除及黏附來控制。
一般言之,一磁控管總成經安置在該目標後面,如熟練之讀者所熟知。
為了避免疑問,每當在本文提及「包括」或「包含」及類似術語時,本發明亦被理解為包含更多限制性術語,諸如「由……構成」及「本質上由……構成」。
雖然上文已描述本發明,但其擴展至在上文或在以下描述、圖式或發明申請專利範圍中陳述之特徵之任何發明組合。為了避免疑問,本發明之第二態樣之設備旨在能夠執行本發明之第一態樣之方法。因此,關於本發明之第一態樣揭示之任何特徵可與關於本發明之第二態樣揭示之任何特徵組合,且反之亦然。
圖4展示能夠在一清潔模式中操作以從形成在一半導體基板上之一導電部件移除材料之本發明之一PVD設備。該設備包括一腔室40,該腔室40包括諸如一壓盤之一基板支撐件41及一目標42。該設備進一步包括一擋板43。擋板43被存放在腔室40中之一凹槽中之一存放位置中。藉由由一活塞或其他適合致動器(未展示)在一水平方向上直接驅動,擋板43可被部署在腔室40內。擋板經部署以將腔室劃分為基板支撐件定位在其中之一第一下隔室44及目標定位在其中之一第二上隔室45。如下文更詳細說明,在具有形成在其上之一導電部件之一半導體基板46定位在基板支撐件41上之後,部署擋板43。一RF電源供應器47將一RF功率供應至基板支撐件41以在第一隔室44中產生及維持一第一電漿以從導電部件移除材料。一DC電源供應器(未展示)用於將DC功率供應至目標42以在第二隔室45中產生及維持一第二電漿以清潔目標42。DC電源供應器亦用於在PVD沈積期間產生及維持一電漿。提供一控制器48,其經組態以控制使用中之設備以(i)部署擋板及(ii)同時在第一隔室中維持第一電漿且在第二隔室中維持第二電漿。
該設備可用於藉由部署擋板43來隔離腔室之一上部分與一下部分。此容許一目標清潔程序在基板支撐件41上存在諸如一晶圓之一半導體基板46之同時發生。此晶圓被有效地與目標屏蔽開,從而容許在腔室之下部分中對其執行二次處理,同時上區段在作用中。在晶圓與擋板之間之幾公分之一間隙已被發現藉由容許在晶圓支撐件上方維持一均勻電漿而提供極佳結果。通常,擋板經接地,同時維持第一及第二電漿。擋板可為申請人之具有先進Hi-Fill™模組之Sigma fxP™ PVD系統中使用之一類型。進一步細節可在美國專利第6,929,724 B2號中找到。此擋板提供擋板與腔室之內壁之間之一環形間隙,此使兩個隔室能夠被有效及方便地泵抽。另外,間隙之提供具有與上隔室中之清潔電漿相關聯之任何優點亦被賦予下隔室之有益效應。例如,下隔室中之微粒可透過用從該目標濺射之材料吸除及黏附來控制。
上隔室45中之電漿係藉由將一DC功率施加至目標而形成之一DC放電電漿。電漿條件可相同或類似於後續PVD沈積程序期間使用之電漿條件。下隔室44中之電漿係藉由將RF功率施加至基板支撐件而產生之一RF供電電漿。晶圓之蝕刻係由在晶圓上產生之自偏壓驅動。
當在腔室之下部分中時,可使用圖4(a)中展示之組態來蝕刻晶圓。有利地,可接著立即採用圖4(b)中展示之PVD沈積組態。與從蝕刻至沈積腔室之轉移期間經過幾秒之傳統程序流程相比,此大大減少從Al墊曝光至Ti封蓋之間之時間。圖2(b)展示相關聯之程序流程,其賦予蝕刻與沈積之間之時間之減少。與圖2(a)中使用之相同數字用於表示共同步驟。圖2(b)包含額外序列步驟24,包括同時基板預清潔(濺射蝕刻)及目標清潔。此後接著鈦黏著/障壁層之PVD沈積22,其後接著銅晶種層之PVD沈積23。此程序提供更少時間供氧化物介面再生長,且藉此提供接觸電阻之減小。
以此方式部署擋板容許目標之表面直接與從晶圓表面蝕刻之材料屏蔽開。然而,發明人已認識到,當上及下隔室未完全彼此隔離時,可發生一些污染物擴散至目標。因此,發明人已判定有必要在上隔室及下隔室中同時維持一電漿。以此方式,在晶圓被蝕刻時,上隔室中之電漿清潔目標。一進一步優點係歸因於鈦之自然吸除效應而提供極佳泵抽條件。一進一步優點仍然係鈦被黏附至屏蔽及腔室壁上。此有助於藉由將粒子黏附至設備之內表面上來控制粒子堆積,藉此防止粒子落至晶圓表面上。
圖5中展示在於另一腔室中預清潔Al接墊之後進行Ti沈積之一標準先前技術程序序列。在步驟101中,由一機器人在真空下將預清潔之晶圓運送至PVD模組且放置至晶圓支撐件上。在步驟102中,將壓盤總成抬高至沈積高度。此高度將取決於程序要求,但通常將為2 cm至6 cm。當在103將氣體(諸如Ar)引入至腔室中時,使腔室處於程序壓力,且當將DC功率(通常為4 kW至20 kW)施加至Ti目標時,在104開始Ti濺射步驟,該Ti目標後面將具有一旋轉磁控管總成。當達成所要膜厚度時,在步驟105移除至目標之DC功率,且停止Ar氣流。接著,在106中將壓盤/晶圓支撐件降低至傳送高度,而在107中,真空機器人從壓盤移除晶圓且將晶圓移動至下一處理站。如先前提及,此等先前技術程序遭受嚴重缺點,即在將晶圓傳送至腔室中所花費之時間內,氧化物介面將已再生長於表面上。
圖6中呈現圖4之設備之操作之一程序序列。在於201將晶圓傳送至壓盤上之後,在202中將擋板部署在晶圓上方。接著在203中將壓盤抬高至濺射蝕刻程序高度,該高度通常對應於約35 mm至60 mm之一晶圓至擋板間隙。在204中,使用Ar或另一惰性氣體(諸如Kr或Xe)來使腔室達到程序壓力,而在205中,將一低DC功率施加至目標。隨著Ti目標在206中運行,在晶圓支撐件與接地擋板之間觸發一RF放電。此使晶圓能夠被濺射清潔,同時將氧化劑之分壓維持在降低位準。當判定已在207/208從Al接觸件移除氧化物層(其通常為1 nm至3 nm厚)時,停止此步驟1 (晶圓清潔/目標電漿)循環。在209移除擋板,且在210將壓盤支撐件抬高至更靠近目標,以便為211中之Ti沈積步驟做準備。由於Ar在此階段仍在流動,所以藉由將DC功率(通常為4 kW至20 kW)切換至目標上來起始沈積。當所需厚度之Ti已沈積至晶圓上時,在212關閉目標功率及氣流,且在213將壓盤降低至傳送高度。最後,在214,由真空機器人從PVD模組移除晶圓。
歸因於從蝕刻位置轉移至沈積位置之時間非常短,所以大大減少可從聚合物分解發生之氧化物再生長量。
在塗佈SiO2之Si晶圓及具有Al及Ti部件之Si晶圓上執行實驗。圖7展示在使用40 mm之一標稱擋板至晶圓間隙之情況下跨一300 mm矽晶圓之一SiO2層之蝕刻輪廓,其使用100 sccm之Ar流量,在3.7毫托下操作,其中500 W RF (13.56 MHz)產生345 V之一DC偏壓。
EDAX量測表明,與從觀察到介面處之氧信號之增加之標準先前技術程序(圖9)獲得之資料相比,使用本發明之程序(圖8)不存在Al-Ti介面處之氧信號之增加。通常,在使用一標準先前技術程序之情況下,此觀察到之信號對應於由TEM判定之1 nm至2 nm之氧化物介面。
TEM成像(圖10)亦表明,使用本發明之程序移除氧化物介面。
在表1中呈現300 mm晶圓之蝕刻清潔及沈積步驟之典型但非限制性程序條件。
蝕刻程序
沈積程序
表1. 例示性蝕刻清潔及沈積條件。
參數 | 單位 | 典型 | 較佳 |
Ar氣體 | sccm | 50至200 | 100 |
壓力 | mT | 1至15 | 3.6 |
壓盤RF功率 | W | 50至600 | 500 |
DC偏壓 | V | 30至400 | 350 |
擋板至晶圓 | mm | 35至60 | 40 |
參數 | 單位 | 典型 | 較佳 |
Ar氣體 | sccm | 50至200 | 100 |
壓力 | mT | 2至4 | 3 |
目標功率 | kW | 2至8 | 4 |
目標電壓 | V | 350至400 | 380 |
目標電流 | A | 5至20 | 10 |
DC偏壓 | V | 10至20 | 14 |
目標至晶圓 | mm | 56至65 | 57.5 |
圖11及圖12分別展示依據程序壓力而變化之用於蝕刻清潔塗佈SiO2之一Si晶圓之蝕刻均勻性及蝕刻速率。此等結果係使用45 mm之一晶圓至擋板間隔且用一300 mm壓盤在500 W RF功率(13.56 MHz)下操作而獲得。對於此等測試,使用由鋁製成之一擋板。然而,亦可使用其他材料,諸如鈦。
圖13展示在於3.6毫托下操作且使用500 W之相同RF偏壓功率之情況下,依據在35 mm至55 mm範圍內之晶圓至擋板間隙而變化之蝕刻均勻性。此等結果指示,至少可在所研究之範圍內達成至少可接受之刻蝕速率及均勻性。此外,吾人之結果表明,本發明可實質上減少或甚至完全移除Al與Ti層之間之金屬氧化物層。此藉由在沈積模組中在擋板處於晶圓上方之情況下進行一濺射清潔且在減少蝕刻步驟與Ti沈積開始之間之時間之同時減小最終濺射蝕刻後之氧化分壓來達成。上文呈現之結果係使用一PVD腔室中之一基於「槳」之擋板而獲得。然而,可考慮使用其他類型之擋板,諸如被旋轉至一部署位置中之擋板。在US 2019/0348264 A1中描述此類型之擋板。
本發明可被容易地併入至HVM (大批量製造)中。此可在一叢集工具中使用以下程序序列來完成:在叢集工具上之一專用濺射蝕刻模組中執行一初始濺射蝕刻步驟,且接著出於生產率之原因在沈積模組中實行一最終預清潔。然而,針對整個預清潔及沈積步驟兩者使用一沈積模組亦將為可行的。以此方式,可完全避免使用一預清潔模組。
儘管已關於在鈦之PVD沈積之前從鋁部件移除氧化鋁來例示本發明,然本發明可應用於其中期望移除一電阻層以減小接觸電阻之其他金屬化應用。
1:真空卡匣升降機(VCE)或設備前端模組(EFEM)
2:運送模組
3:預熱站
4:濺射蝕刻(預清潔)模組
5:晶圓
6:真空機器人
7:物理氣相沈積(PVD)沈積模組
20:脫氣步驟
21:預清潔濺射蝕刻步驟
22:物理氣相沈積(PVD)沈積
23:物理氣相沈積(PVD)沈積
24:序列步驟
30:鋁接墊
32:鈍化層
34:聚醯亞胺遮罩
36:氬離子
38:CO
40:腔室
41:基板支撐件
42:目標
43:擋板
44:第一下隔室
45:第二上隔室
46:半導體基板
47:射頻(RF)電源供應器
48:控制器
101:步驟
102:步驟
103:步驟
104:步驟
105:步驟
106:步驟
107:步驟
201:步驟
202:步驟
203:步驟
204:步驟
205:步驟
206:步驟
207:步驟
208:步驟
209:步驟
210:步驟
211:步驟
212:步驟
213:步驟
214:步驟
現在將參考隨附圖式僅藉由實例描述本發明之實施例,其中:
圖1係一先前技術PVD叢集工具之一示意圖;
圖2展示(a)一先前技術程序流程及(b)本發明之一程序流程;
圖3係在氬離子蝕刻清潔期間聚醯亞胺介電遮罩中之一Al墊開口之一示意性表示;
圖4係(a)在腔室之下及上隔室中同時具有電漿及(b)在PVD沈積期間之本發明之一PVD設備之一示意圖;
圖5展示一先前技術Ti沈積程序流程;
圖6展示一順序預清潔/Ti沈積程序流程;
圖7展示使用擋板之一Ar濺射蝕刻輪廓;
圖8展示根據本發明製造之Al/Ti結構之EDAX (能量色散X射線分析)量測;
圖9展示根據先前技術製造之Al/Ti結構之EDAX量測;
圖10係(a)根據先前技術製造之Al/Ti結構及(b)根據本發明製造之Al/Ti結構之TEM (透射電子顯微鏡)影像;
圖11展示依據程序壓力而變化之用於蝕刻清潔塗佈氧化矽之一矽晶圓之蝕刻均勻性;
圖12展示依據程序壓力而變化之用於蝕刻清潔塗佈氧化矽之一矽晶圓之蝕刻速率;及
圖13展示依據晶圓至擋板間隙而變化之用於蝕刻清潔塗佈氧化矽之一矽晶圓之蝕刻均勻性。
40:腔室
41:基板支撐件
42:目標
43:擋板
44:第一下隔室
45:第二上隔室
46:半導體基板
47:射頻(RF)電源供應器
48:控制器
Claims (24)
- 一種在一清潔模式中操作一PVD設備以從形成在一半導體基板上之一導電部件移除材料之方法,其包括以下步驟: 將具有形成在其上之該導電部件之該半導體基板定位在該PVD設備之一腔室中之一基板支撐件上; 在該腔室內部署一擋板以將該腔室劃分為該半導體基板及該基板支撐件定位在其中之一第一隔室及該PVD設備之一目標定位在其中之一第二隔室;及 同時在該第一隔室中維持一第一電漿以從該導電部件移除材料,且在該第二隔室中維持一第二電漿以清潔該目標。
- 如請求項1之方法,其中藉由將一RF電信號施加至該基板支撐件來產生該第一電漿。
- 如請求項1或請求項2之方法,其中藉由將一電信號施加至該目標來產生該第二電漿。
- 如請求項3之方法,其中該電信號係一DC電信號。
- 如請求項1或請求項2之方法,其中從該導電部件移除之該材料係形成該導電部件之一材料之氧化物。
- 如請求項5之方法,其中該導電部件係由鋁形成,且從該導電部件移除之該材料係氧化鋁。
- 如請求項6之方法,其中該鋁導電部件係用於該半導體基板之一接墊。
- 如請求項1或請求項2之方法,其中該導電部件係由銅形成。
- 如請求項8之方法,其中從該銅導電部件移除之該材料係鈦、鉭、鈦之氮化物或鉭之氮化物之一或多者。
- 如請求項8之方法,其中該銅導電部件係一鑲嵌互連之一組成部分。
- 如請求項1或請求項2之方法,其中在該腔室內部署該擋板之該步驟包括將該擋板橫向跨該腔室從一存放位置移動至一部署位置,在該部署位置中該腔室被劃分為該等第一及第二隔室。
- 如請求項1或請求項2之方法,其中在同時維持該等第一及第二電漿之該步驟期間,該基板及該擋板分開達35 mm至60 mm範圍內之一間隙。
- 如請求項1或請求項2之方法,其中該擋板係由鈦或鋁製成。
- 如請求項1或請求項2之方法,其包括以下進一步步驟: 縮回該擋板,使得該腔室不再被劃分為該等第一及第二隔室;及 操作該PVD設備以藉由PVD將一導電沈積材料沈積至該導電部件上。
- 如請求項14之方法,其中該基板支撐件在同時維持該等第一及第二電漿之該步驟期間處於一第一位置且在操作該PVD設備以藉由PVD將一導電沈積材料沈積至該導電部件上之該步驟期間處於一第二位置,其中該第二位置比該第一位置更靠近該目標。
- 如請求項14之方法,其中藉由PVD沈積至該導電部件上之該導電沈積材料係鈦。
- 如請求項14之方法,其中藉由PVD將該導電沈積材料沈積至該導電部件上係一凸塊下金屬化(UBM)程序之部分。
- 一種能夠在一清潔模式中操作之PVD設備,其包括: 一腔室,其包括一基板支撐件及一目標; 一擋板,當在使用中具有形成在其上之一導電部件之一半導體基板定位在該基板支撐件上時,該擋板能夠部署在該腔室內,該擋板經部署以將該腔室劃分為該基板支撐件定位在其中之一第一隔室及該目標定位在其中之一第二隔室; 一第一電漿產生裝置,其用於在該第一隔室中維持一第一電漿以從該導電部件移除材料; 一第二電漿產生裝置,其用於在該第二隔室中維持一第二電漿以清潔該目標;及 一控制器,其經組態以控制使用中之該設備以(i)部署該擋板及(ii)同時在該第一隔室中維持一第一電漿以從該導電部件移除材料,且在該第二隔室中維持一第二電漿以清潔該目標。
- 如請求項18之PVD設備,其中該控制器及該基板支撐件經組態使得該基板支撐件在同時維持該等第一及第二電漿之步驟期間處於一第一位置且在操作該PVD設備以藉由PVD將一導電沈積材料沈積至該導電部件上之步驟期間處於一第二位置,其中該第二位置比該第一位置更靠近該目標。
- 如請求項18或請求項19之PVD設備,其進一步包括實質上或完全包圍該目標之一陽極結構,其中在該目標與該陽極結構之間產生該第二電漿。
- 如請求項18或請求項19之PVD設備,其中該擋板被存放在該腔室外部之一存放位置中。
- 如請求項21之PVD設備,其進一步包括用於將該擋板橫向跨該腔室從該存放位置移動至部署該擋板之一部署位置且將該擋板縮回至該存放位置之一裝置。
- 如請求項18或請求項19之PVD設備,其中該擋板至少在其部署時電接地。
- 如請求項18或請求項19之PVD設備,其中該控制器經組態以控制該基板支撐件之一位置,使得在同時維持該等第一及第二電漿時,該基板及該擋板分開達35 mm至60 mm範圍內之一間隙。
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US5403459A (en) * | 1993-05-17 | 1995-04-04 | Applied Materials, Inc. | Cleaning of a PVD chamber containing a collimator |
US6132805A (en) * | 1998-10-20 | 2000-10-17 | Cvc Products, Inc. | Shutter for thin-film processing equipment |
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