TW202333262A - Equipment front end module buffering chamber device and semiconductor processing device equipped with the device characterized by forming a gas curtain at the entrance by the arrangement of a curtain-typed nozzle part in the entrance of the chamber part to remove the fumes or foreign matters, thereby, avoiding contamination and improving semiconductor yield - Google Patents

Abstract

The present invention is related to an EFEM buffering chamber device that is arranged in an equipment front end module (EFEM) transferring room and buffers the delivered wafer, and is also related to a semiconductor processing device equipped with the device. The characteristics thereof include: a chamber part that has a wafer entrance arranged at the front surface and a loading space formed inside to load several wafers; a loading part that is arranged in the chamber part and is formed to have multiple layers of slits for loading and receiving several wafers along the up-and-down direction; and a curtain-typed nozzle part that is arranged in the entrance of the chamber part to spray a purging air toward the entrance for forming a air curtain. The present invention forms an air curtain at the entrance by the arrangement of a curtain-typed nozzle part in the entrance of the chamber part, so as to remove the fumes or foreign matters after the semiconductor process is completed, thereby, avoiding contamination and achieving the effect of improving semiconductor yield at the same time.

Description

Equipment front-end module buffer chamber device and semiconductor process equipment having the device

The present invention relates to an EFEM buffer chamber device and a semiconductor process device having the device. Specifically, it relates to an EFEM buffer chamber device that is installed in an EFEM transfer chamber and buffers transferred wafers and a semiconductor process device having the device. device.

In the semiconductor manufacturing process, wafers and the semiconductor components that form the wafers are high-precision raw materials. Special attention should be paid to preventing damage from external contamination and impact during storage and transfer. Especially during the storage and transfer of wafers, it is necessary to strengthen management to prevent their surfaces from being contaminated by dust, moisture, and impure substances such as various organic substances.

In the prior art, in order to improve the manufacturing yield and quality of semiconductors, wafers are often processed in a clean room. However, with the continuous development of high integration and refinement of components and large-scale wafers, managing larger clean rooms is still very difficult in terms of cost and technology.

In this regard, instead of improving the overall cleanliness of the clean room, that is, focusing on improving the cleanliness of the local space around the wafer, a mini-environment cleaning method is adopted.

On the other hand, the semiconductor manufacturing process will sequentially repeat various processes such as etching, deposition, and etching. During each process, problems such as foreign matter or contaminants remaining on the wafer causing defects and reducing the yield of the semiconductor process sometimes exist.

Therefore, in the semiconductor manufacturing process, wafers are moved into multiple processing chambers or when the semiconductor processing space is transferred, in order to reduce foreign matter or other contaminants during the process of moving the wafer from one processing space to another. Various devices and tools are attached to the wafer.

The semiconductor process equipment including the Equipment Front End Module (EFEM), as shown in Figures 1 and 2, includes: Load Port Module 110 (LPM), wafer container 120 (Front Opening Unified Pod, FOUP), fan filter unit 130 (Fan Filter Unit), and wafer transfer chamber 140.

Based on the wafer transfer tool 150 such as a robot installed in the wafer transfer chamber 140 , the wafers in the wafer container 120 are transported to the wafer transfer chamber 140 through the load port module 110 , or from the wafer transfer chamber 140 stored in the wafer container 120 .

The door of the loading port module 110 and the door installed on the front surface of the wafer container 120 are opened at the same time in a close contact state, and the wafer is removed or received through the open area.

Generally speaking, the fume generated after the process will remain on the surface of the wafer that has undergone the semiconductor processing process. The resulting chemical reaction will lead to a reduction in the production efficiency of the semiconductor wafer.

Furthermore, when the door of the wafer container 120 is opened to transport or store wafers, the purge gas inside the wafer container 120 is controlled to maintain a certain concentration and remains unchanged, and the external air flowing into the wafer container is filtered. .

However, due to the external air flowing into the wafer container 120, some unfiltered air exists inside the wafer container 120. Although the air environment of the wafer transfer chamber 140 is clean air controlled by particles, it contains oxygen, moisture and other components. If this air flows into the inside of the wafer container (120), this will cause the internal humidity to rise, which may cause the wafer surface to Can be oxidized by moisture or oxygen contained in external air.

Therefore, as a device to effectively prevent external gas from flowing into the wafer container 120 from the wafer transfer chamber 140, in the prior art, a double door opening and closing method is provided, that is, a lid that opens and closes the loading port module 110 and the wafer container 120 can be used. Block external air. Then a door member that can slide in the up and down direction is provided. This arrangement makes the structure of the loading port quite complicated.

Especially in the wafer container 120, external air flows into the inside of the wafer container 120 from the entrance and exit of the wafer. At this time, inside the entrance and exit, as the humidity increases, the wafer surface is affected by the moisture or oxygen contained in the external air. The impact leads to low production efficiency, and there will also be such problems.

In order to solve the above problem, buffer chambers 180 are provided on both ends and sides of the wafer transfer chamber 140 for temporarily storing the wafer, so that the purge gas can be used to remove smoke or other pollutants.

However, in the above-mentioned existing buffer chamber, the external gas blocking nozzle does not update the fluid characteristics and cannot maintain the shape of the fluid, resulting in turbulence in the air flow. This problem has never been resolved.

Moreover, the turbulent gas is sprayed in all directions, causing the air flow inside the buffer chamber to flow irregularly. Not only does the external gas blocking effect disappear, but the turbulent gas also causes the external air flow to flow into the interior. The blocking effect has the opposite effect, causing such a problem.

Therefore, the existing buffer chamber cannot maintain the fluid shape unchanged, and also causes the formation of turbulent flow. In actual use, it is affected by external airflow. At the same time, the nozzle cannot completely solve the turbulence caused by the encounter of fluids and the resulting inflow of external fluid airflow. This possible problem cannot be solved either.

In addition, the disadvantage of the buffer chamber is that the nozzle cannot reflect the height characteristics of the buffer chamber. Although the upper part has good humidity characteristics, the lower part tends to have high humidity characteristics. The inert gas cannot be sprayed uniformly on the entire nozzle in the form of a single-layer nozzle. Therefore, the yield of wafers stored in the same buffer chamber space may be different, and this shortcoming of the nozzle can lead to similar problems.

[Prior technical literature] [Patent Document] Republic of Korea Authorized Patent No. 10-1254721 (April 15, 2013) Republic of Korea Authorized Patent No. 10-1909483 (December 19, 2018) Republic of Korea Authorized Patent No. 10-1756743 (July 12, 2017)

[Problems to be solved by this invention] An object of the present invention is to provide a means for solving the above-mentioned existing problems. The means relates to an EFEM buffer chamber device and a semiconductor processing device having the same. Each slit groove in the chamber evenly injects purge gas to reduce the humidity in the chamber and maintain it constant, thereby achieving the purpose of increasing productivity.

Moreover, another object of the present invention is to provide an EFEM buffer chamber device and a semiconductor processing device having the same. By providing an additional heating unit at the entrance and exit of the nozzle part, the heater provided at the entrance and exit is used to convert the inert gas into the chamber. The temperature increases, thereby enhancing the management of humidity minimums.

Moreover, another object of the present invention is to provide an EFEM buffer chamber device and a semiconductor processing device having the same. By arranging the nozzle portion in multiple layers, the concentrated spray nozzles at the lower part of the loading part are arranged on three surfaces, and the inert spray is sprayed. Gas, the injection nozzle is set up to inject the inert gas from the multi-layer nozzle to the entire area, so that the inert gas can be evenly distributed to the entire space area, and the concentrated injection area at the lower part of the loading part, which is fragile in humidity, can be used to control the entire load. Multiple wafers are managed to maintain the same humidity.

In addition, another object of the present invention is to provide an EFEM buffer chamber device and a semiconductor processing device having the same. By providing a sealing material or an airtight material in the space between the nozzle cylinders, it is possible to prevent external The air flow flows into each space, while also preventing the leakage of inert gas (Leak).

In addition, another object of the present invention is to provide an EFEM buffer chamber device and a semiconductor processing device having the device. By providing a curtain nozzle unit at the entrance and exit of the chamber, an air curtain is formed at the entrance and exit, so that an air curtain can be formed at the entrance and exit. After the semiconductor manufacturing process is completed, smoke or other foreign matter is removed to prevent contamination and improve the yield of semiconductors.

In addition, another object of the present invention is to provide an EFEM buffer chamber device and a semiconductor processing device having the device. By disposing nozzles on the side and rear of the chamber as well as at the entrance and exit, uniform nitrogen gas is sprayed simultaneously, so that Can maintain humidity below 5%.

In addition, another object of the present invention is to provide an EFEM buffer chamber device and a semiconductor processing device having the device, which can prevent particles from entering the interior of the chamber by providing a nozzle portion in the chamber to block external air. At the same time, it can also reduce the internal humidity of the wafer and improve the yield of semiconductor production.

In addition, another object of the present invention is to provide an EFEM buffer chamber device and a semiconductor processing device having the same. By combining the diffusion block and the connection block in a multi-layer form, the purge gas can be sprayed uniformly to the nozzle portion and Diffusion adjusts the forward space according to the external gas state, thereby determining the fluid linear maintenance space capable of blocking external gas.

In addition, another object of the present invention is to provide an EFEM buffer chamber device and a semiconductor processing device provided with the device, which uniformly sprays and diffuses the fluid temporarily flowing in from the inlet into the flow diffusion space of the fluid, thereby converting a certain amount of fluid into the fluid flow diffusion space. The flow rate is sprayed to the Laminar Flow Nozzle.

In addition, another object of the present invention is to provide an EFEM buffer chamber device and a semiconductor processing device having the device, which uses a curtain nozzle portion that forms laminar flow on the left and right sides and upper portion of the chamber portion to purge the inert fluid. The fluid purged through the laminar flow nozzle is sprayed in a constant shape according to the adjustment of pressure and flow rate. This not only improves the effect of blocking external gas, but also maximizes the inert gas inside the chamber. Flows to the outside, effectively improving humidity control.

In addition, another object of the present invention is to provide an EFEM buffer chamber device and a semiconductor processing device provided with the device. By adjusting the injection angle of the curtain nozzle part, the inert gas injected from both sides can be prevented from colliding and causing Flow into the chamber occurs.

[Means to solve problems] In order to solve the above technical problems, the present invention provides an EFEM buffer chamber device installed in an EFEM transfer chamber for buffering and transferring wafers. It is characterized in that it includes: a chamber part 10 with an entrance and exit for wafers in and out of which is provided in the front. A loading space is formed inside, which can load multiple wafers; a loading part 20 is provided in the chamber part 10 and is formed with multi-layered slits, which can load and accommodate multiple wafers in the up and down direction; and a curtain nozzle part , is provided at the entrance and exit of the chamber part 10, and sprays purge gas toward the entrance and exit to form an air curtain.

The curtain nozzle part of the present invention includes: a second nozzle part 50, which is provided at both ends of the entrance and exit of the chamber part 10, and injects purge gas toward the entrance and exit to form an air curtain.

The second nozzle part 50 of the present invention includes: a second nozzle block disposed on the entrance and exit side of the chamber part 10; a second connecting block combined with the outside of the second nozzle block and connected with the chamber. The entrance and exit sides of the chamber part 10 are connected; a second fixing block is combined with the outside of the second connection block and fixed on the entrance and exit side of the chamber part 10; and a plurality of second nozzles are provided on the second nozzles. The front and back of the blocks present a linear arrangement structure.

The second nozzle part 50 of the present invention also includes: a second injection angle adjustment piece, which is disposed between the second nozzle block and the second connection block and can be rotated to adjust the flow rate of the purge gas. Jet angle.

The curtain nozzle part of the present invention includes: a third nozzle part 60, which is disposed above the entrance and exit of the chamber part 10 and injects purge gas toward the entrance and exit to form an air curtain.

The third nozzle part 60 of the present invention includes: a third nozzle block, which is disposed above the entrance and exit of the chamber part 10; a third connection block, which is combined with the outside of the third nozzle block and with the chamber. The upper surface of the entrance and exit of the chamber part 10 is connected; a third fixed block is combined with the outside of the third connecting block and fixed on the upper surface of the entrance and exit of the chamber part 10; and a plurality of third nozzles are provided on the third nozzle The front and back of the blocks present a linear arrangement structure.

The third nozzle part 60 of the present invention also includes: a third injection angle adjustment piece, which is disposed between the third nozzle block and the third connection block and is rotatable and can also adjust the flow rate of the purge gas. Jet angle.

In addition, the present invention may further include a first nozzle portion 30 formed through and disposed outside the chamber portion 10 to inject purge gas from the outside of the chamber portion 10 into the multi-layered slit of the loading portion 20 . seam.

In addition, the present invention also includes: heating parts 40 respectively provided at both ends of the first nozzle part 30 to heat the purge gas injected from the outside.

The first nozzle part 30 of the present invention includes: an 11th nozzle substrate disposed on one side of the chamber part 10 for injecting purge gas; a 12th nozzle substrate disposed on the other side of the chamber part 10 One side surface injects purge gas; a 13th nozzle substrate is provided behind the chamber part 10 and injects purge gas.

The first nozzle part 30 of the present invention includes: a first nozzle block disposed on the side or rear of the chamber part 10; a first fixing block combined with the outside of the first nozzle block and fixed to the The side or rear surface of the chamber part 10; a plurality of first upper nozzles, formed through and disposed on the upper part of the front and rear surfaces of the first nozzle block; and a plurality of first lower nozzles, formed through and disposed on the first nozzle block. A lower part of the front and back of the nozzle block.

Furthermore, the first lower nozzle of the present invention has a larger injection hole size than the first upper nozzle, or a greater number of injection holes than the first upper nozzle.

Furthermore, the present invention relates to a semiconductor processing equipment including the EFEM buffer chamber device based on the above description.

[Effects of the invention] As mentioned above, the present invention sets a curtain nozzle at the entrance and exit of the chamber to form an air curtain at the entrance. After the semiconductor process is completed, smoke and foreign matter are removed to prevent contamination and thereby increase the yield of semiconductors.

In addition, by installing nozzles on the side and rear of the chamber as well as the entrance and exit, nitrogen gas is sprayed evenly, achieving a humidity management effect of less than 5%.

In addition, by providing a nozzle in the chamber, external air is blocked, particles are prevented from flowing into the chamber and contamination is caused, and the humidity inside the wafer is reduced, ultimately achieving the effect of improving productivity.

In addition, by combining the diffusion block and the connecting block in a multi-layered manner, the purge gas is sprayed uniformly to the nozzle part to diffuse it, and then the advancing space is adjusted according to the state of the external air, thereby creating a fluid laminar flow section that blocks external air. .

In addition, the fluid that temporarily flows in from the fluid inlet is evenly dispersed in the fluid flow diffusion space, thereby achieving the effect of stable flow injection of the laminar flow nozzle (Laminar Flow Nozzle).

In addition, the inert fluid is purged using curtain nozzles that form laminar flow on the left, right and upper parts of the chamber. The pressure and flow rate of the purge gas are adjusted and the inert fluid is ejected in a state where the shape remains unchanged. This not only improves the barrier against external air. As a result, the injected inert gas can be prevented to the greatest extent from flowing out of the interior of the chamber.

Furthermore, by adjusting the injection angle of the curtain nozzle part, the inert fluid injected from both sides is prevented from colliding with each other and flowing into the interior of the chamber part, thereby achieving this effect.

In addition, by setting nozzles around the chamber and injecting purge gas evenly into each slit of the loading part, the humidity in the chamber is reduced to a certain level, thereby improving productivity.

In addition, by providing an additional heating unit at the entrance and exit of the nozzle unit, the temperature of the inert gas is increased using the heater, thereby achieving an effect of improving the management of the minimum humidity value.

Furthermore, by arranging a multi-layer nozzle section and simultaneously arranging injection nozzles on three lower surfaces of the loading section to inject inert gas, the inert gas can be injected uniformly into the entire space because the injection nozzles are provided to inject the entire space. Through concentrated diffusion at the lower part of the loader, which is fragile and sensitive to humidity, uniform and unified humidity management can be achieved for multiple wafers stored in the overall loader.

In addition, by providing seals or airtight members in the spaces between the blocks of the nozzle part, external airflow can be prevented from flowing into each space and leakage of the inert gas can be prevented.

In addition, by arranging a curtain nozzle at the entrance and exit of the chamber, an air curtain is formed at the entrance and exit, thereby removing smoke and other foreign matter after the semiconductor process is completed, preventing contamination, and thus achieving the effect of improving productivity.

The following content will specifically describe the preferred embodiments of the present invention with reference to the drawings.

1 and 2 are structural diagrams illustrating a semiconductor processing device having an EFEM buffer chamber device according to an embodiment of the present invention. FIG. 3 is a plan view illustrating a semiconductor processing device having an EFEM buffer chamber device according to an embodiment of the present invention. FIG. 4 is a structural diagram illustrating an EFEM buffer chamber device in an embodiment of the present invention. Figure 5 is an exploded view illustrating an EFEM buffer chamber device in one embodiment of the present invention. FIG. 6 is a structural diagram illustrating the first nozzle part of the EFEM buffer chamber device in one embodiment of the present invention. 7 is an exploded view illustrating the first nozzle part of the EFEM buffer chamber device in one embodiment of the present invention. 8 is a structural diagram illustrating the second nozzle part of the EFEM buffer chamber device in one embodiment of the present invention. 9 is an exploded view illustrating the second nozzle part of the EFEM buffer chamber device in one embodiment of the present invention. FIG. 10 is a plan view illustrating the EFEM buffer chamber device in a filling state according to an embodiment of the present invention. FIG. 11 is a plan view illustrating the EFEM buffer chamber device in an exhaust state according to an embodiment of the present invention. FIG. 12 is a state diagram illustrating the EFEM buffer chamber device in a filling state according to an embodiment of the present invention. FIG. 13 is a state diagram illustrating the EFEM buffer chamber device in an exhaust state according to an embodiment of the present invention.

14 is an exploded view illustrating a modified embodiment of the EFEM buffer chamber device in one embodiment of the present invention. FIG. 15 is a structural diagram illustrating the first nozzle portion of the EFEM buffer chamber device in a modified embodiment according to one embodiment of the present invention. 16 is a front view illustrating the first nozzle portion of the EFEM buffer chamber device according to one embodiment of the present invention in a modified embodiment. FIG. 17 is an exploded view illustrating the first nozzle part of the EFEM buffer chamber device according to an embodiment of the present invention in a modified embodiment. Figure 18 is an exploded view illustrating another embodiment of an EFEM buffer chamber device based on an embodiment of the present invention. FIG. 19 is a structural diagram illustrating another embodiment of the second nozzle part of the EFEM buffer chamber device in one embodiment of the present invention. 20 is an exploded view illustrating another embodiment of a second nozzle portion of an EFEM buffer chamber device according to another embodiment of the present invention. FIG. 21 is an exploded view illustrating the third nozzle part of the EFEM buffer chamber device according to an embodiment of the present invention.

The semiconductor processing device in the present invention is a semiconductor processing device equipped with the EFEM buffer chamber device in this embodiment. As shown in Figures 1 to 3, the crystal is composed of a load port module 110 (LPM). It consists of a circular container 120 (Front Opening Unified Pod, FOUP), a fan filter unit 130 (Fan Filter Unit, FFU), and a wafer transfer chamber 140; while the EFEM buffer chamber device consists of an installed Equipment Front Module (Equipment Front End Module, EFEM).

The load port module 110 (LPM) is a component that can open and close the wafer container 120 (Front Opening Universal Pod) that accommodates semiconductor manufacturing wafers, and can also be used to transfer wafers.

When the wafer container 120 (Front Opening Unified Pod, FOUP) is installed on the base unit, the loading port module 110 injects nitrogen into the inside of the wafer container 120, and the pollutants inside the wafer container 120 will be ejected from the wafer container. The round container 120 is discharged to the outside, thus preventing the wafers stored in the wafer container 120 and being transferred from being damaged by contaminants.

The inside of the wafer container 120 may be provided with a loading space for loading multiple wafers, and the wafers can be stored therein or transferred to the outside by controlling the opening and closing of the door. The above-mentioned wafer container 120 may be composed of a front-opening unified pod (FOUP).

The fan filter unit 130 is installed at the upper part of the wafer transfer chamber 140 and serves as a device to remove microscopic particles such as molecular contaminants such as smoke and dust to keep the air inside the wafer transfer chamber 140 clean. Generally, the air flow in the wafer transfer chamber 140 flows from the upper part where the fan filter unit is provided to the lower part.

The wafer transfer chamber 140 is a space member formed between the wafer container 120 for loading a plurality of wafers, the transfer unit 160 for transferring the wafers to be processed in the semiconductor process, and the processing space 170 for processing semiconductors.

The above-mentioned wafer transfer chamber 140 is used as a transfer tool 150 of a transfer machine to transfer wafers from one processing space to another processing space. During this process, in order to maximize the protection of the transferred wafers from foreign matter or other contaminants For attachment, a buffer chamber 180 can be provided on the side to maintain the cleanliness of the internal space.

As shown in FIGS. 4 and 5 , the EFEM buffer chamber device in this embodiment is composed of a chamber part 10 , a loading part 20 , a first nozzle part 30 , a heating part 40 , and a curtain nozzle part. It is an EFEM buffer device installed in the wafer transfer chamber 140 to buffer the transferred wafer.

As a chamber component, the chamber part 10 has an entrance and exit for wafers in and out of the front surface, and a loading space for loading a plurality of wafers inside. The two sides and rear of the loading space can be filled with the first nozzle part 30 for spraying. The purge gas can be discharged from the exhaust portion provided at the angular area between the two side surfaces and the rear surface.

As shown in FIGS. 1 to 3 , the chamber unit 10 temporarily loads the wafers that are provided on both sides of the EFEM wafer transfer chamber 140 and transferred by the transfer device 150 for a certain period of time, and in nitrogen or other inert gases, etc. Under the action of purge gas, smoke or other pollutants attached to the wafer surface are removed.

The loading part 20 is provided in the loading space of the chamber part 10 and is a loading member formed with multi-layered slits, and can respectively load and accommodate a plurality of wafers. Multi-layer slits are arranged along the up and down direction, and multiple wafers are individually inserted into them to complete loading and stored therein as a temporary storage space.

The first nozzle part 30 is provided outside the chamber part 10 as a nozzle member formed in communication, and injects the purge gas from the outside of the chamber part 10 to the multi-layer slit of the loading part 20, which is formed by the 11th nozzle substrate 30a, It consists of a 12th nozzle substrate 30b and a 13th nozzle substrate 30c.

The 11th nozzle substrate 30a is provided on one side of the chamber part 10. As a nozzle substrate for injecting purge gas, the eleventh nozzle substrate 30a evenly injects purge gas such as nitrogen or inert gas from one side of the chamber part 10 to the internal loading space. By purging the gas, the humidity of the chamber 10 can be effectively controlled and stably maintained at a low level.

The twelfth nozzle substrate 30b is provided on the other side of the chamber portion. As a nozzle substrate for injecting purge gas, the twelfth nozzle substrate 30b uniformly injects purge gas such as nitrogen or inert gas from the other side of the chamber portion 10 to the internal loading space. By purging the gas, the humidity of the chamber 10 can be effectively controlled and stably maintained at a low level.

The 13th nozzle substrate 30b is provided on the back surface of the chamber part. As a nozzle substrate for injecting purge gas, the purge gas such as nitrogen or inert gas can be sprayed uniformly from the back surface of the chamber part 10 to the internal loading space. This can The humidity of the chamber 10 is effectively controlled and stably maintained at a low level.

In addition, as shown in FIGS. 6 to 7 , the first nozzle part 30 can be composed of a first nozzle block 31 , a first fixing block 32 , a first upper nozzle 33 , a first lower nozzle 34 , and a first combination block 35 . It consists of a first socket 36, a first connecting piece 37, and a first sealing piece 38.

The first nozzle block 31 is a nozzle block disposed on the side or rear of the chamber 10 , and its general shape is a right rectangular columnar or flat plate structure, so that it can be more easily coupled to the side or rear of the chamber 10 . A penetrating injection nozzle is formed on its front and rear surfaces, which can inject purge gas.

The first fixing block 32 is combined with the outside of the first nozzle block 31. As a fixing block fixed to the side or rear of the chamber part 10, its general shape is a right square columnar or flat plate structure, so that it can be more easily combined to The side or back of the chamber part 10 .

The first upper nozzle 33 is a plurality of nozzle members formed through the front and rear upper portions of the first nozzle block 31 and is composed of injection nozzles that intensively inject purge gas into slits provided in the upper portion of the loading portion 20 .

The first lower nozzle 34 is a plurality of nozzle members formed through the lower portions of the front and rear doors of the first nozzle block 31 and is composed of injection nozzles that intensively inject purge gas into slits provided in the lower portion of the loading portion 20 .

The above-mentioned first lower nozzle 34 is preferably configured to have a larger injection hole size or a larger number of injection holes than the first upper nozzle 33, so that the purge gas can be injected more concentratedly to the load. On the slit provided on the lower part of the part 20. Furthermore, it is preferable that the first lower nozzle 34 injects the purge gas with a larger injection amount and injection pressure than that of the first upper nozzle 33 .

The first coupling block 35 serves as a coupling member coupled to the lower portions of the first nozzle block 31 and the first fixed block 32 and forms a plurality of first inflow holes penetrating in the up and down direction to allow the purge gas to flow into the first nozzle block 31 and the first fixed block 32 . An internal space between fixed blocks 32.

The first socket 36 serves as a connecting member connected to the lower part of the first combination block 35 and is connected to the purge gas supply pipe, so that the purge gas flows into the nozzle part 30 and injects the internal space of the chamber part 10 uniformly.

The first connecting piece 37 is disposed between the first nozzle block 31 and the first fixing block 32 as an airtight component close to the internal space between the two, and close to the periphery of the internal space, so that the first nozzle The purge gas flowing in between the block 31 and the first fixed block 32 maintains a certain airtightness.

The first sealing piece 38 is provided between the first nozzle block 31 and the first fixed block 32 as an airtight component that seals the internal space between the two, and is attached around the internal space to make the first nozzle block 31 and the first fixed block 32 The purge gas flowing in between the first fixed blocks 32 maintains sealing.

The first intermediate block 31a is provided between the first nozzle block 31 and the first fixed block 32 and serves as an injection device for injecting the purge gas to diffuse the purge gas flowing into the first nozzle block 31. A plurality of first diffusion holes are provided through the front and rear surfaces of the first intermediate block 31a.

The heating parts 40 are respectively provided at both ends of the first nozzle part 30. As a heating member for heating the purge gas entering from the outside, the heating parts 40 are inserted between the first nozzle block 31 and the first fixed block 32 of the first nozzle part. , heating the purge gas passing through this position and diffusing the purge gas at high temperature, thereby improving the performance of the purge gas.

The curtain nozzle part is provided at the entrance and exit of the chamber part 10. As a nozzle component that injects purge gas into the entrance and exit to form an air curtain, it consists of a second nozzle part 50 provided at both ends of the entrance and exit and a third nozzle part provided at the upper part of the entrance and exit. At least one of the nozzle portions 60 is formed.

As shown in FIGS. 10 to 13 , the second nozzle part 50 is provided at both ends of the entrance and exit of the chamber part 10 . It is a nozzle component that injects purge gas into the entrance and exit to form an air curtain. It is provided at one end of the entrance and exit. It consists of a 21st nozzle substrate 50a and a 22nd nozzle substrate 50b provided at the other end side of the inlet and outlet.

The 21st nozzle substrate 50a is a nozzle substrate provided at one end side of the entrance and exit of the chamber part 10, and evenly injects a purge gas such as nitrogen from one end side of the entrance and exit of the chamber part 10 to the other end side of the entrance and exit, thereby forming an air curtain. In this way, the inflow of external air from the inlet and outlet of the chamber part 10 can be blocked, and the outflow of internal inert gas can be blocked, thereby easily controlling the humidity of the device.

The 22nd nozzle substrate 50b is a nozzle substrate provided at the other end side of the entrance and exit of the chamber part 10, and evenly injects a purge gas such as nitrogen from the other end side of the entrance and exit of the chamber part 10 to one end side of the entrance and exit, thereby forming an air curtain. . In this way, the inflow of external air from the inlet and outlet of the chamber part 10 can be blocked, and the outflow of internal inert gas can be blocked, thereby easily controlling the humidity of the device.

In addition, as shown in FIGS. 8 to 9 , the second nozzle part 50 is composed of a second nozzle block 51 , a second connection block 52 , a second fixing block 53 , a second nozzle 54 , a second coupling piece 55 , and a second connecting piece 55 . It is composed of a piece 56, a second fixing piece 57, a second combining block 58, and a second socket 59.

The second nozzle block 51 is a nozzle block component that is respectively disposed on both ends and sides of the chamber 10 . Its shape is generally a right-square columnar or flat plate structure, so that it can be more easily coupled to both ends and sides of the entrance and exit of the chamber 10 . . At the same time, there are injection nozzles formed through the front and rear surfaces and arranged along the upper and lower length directions, which can inject purge gas.

The second connection block 52 is coupled to the outside of the second nozzle block 51 and serves as a connection block connected to the inlet and outlet side of the chamber part 10. A plurality of second diffusion holes are also formed through the front and rear surfaces of the second connection block 52. It is disposed between the second nozzle block 51 and the second fixed block 53 and serves as a diffusion component to diffuse the purge gas flowing into the second nozzle block 51 .

The second fixing block 53 is coupled to the outside of the second connecting block 52 as a fixing block structure fixed to the entrance side of the chamber 10 , and its outer shape generally presents a right-square columnar or flat plate-shaped structure.

The second nozzle 54 is composed of a plurality of nozzle members arranged in the vertical direction and is formed through the front and rear surfaces of the second nozzle block 51. It is composed of injection nozzles and can spray the purge gas concentratedly on the entrance and exit side portions to form an air curtain.

The second coupling piece 55 is a coupling member formed by protrusions on both end side surfaces of the second nozzle block 51 , and is connected and fixed on both end sides of the entrance and exit of the chamber part 10 by connecting and fixing members such as bolts.

As a connecting member provided between the second nozzle block 51 and the second connecting block 52, the second connecting piece 56 is composed of an airtight component and is closely attached to the surroundings of the internal space to seal the internal space between the two. The purge gas flowing into the space between the second nozzle block 51 and the second connection block 52 is maintained airtight.

The second fixed piece 57 is a connecting member provided between the second connecting block 52 and the second fixed block 53. It is composed of a sealing member that seals the internal spaces of the two. It is provided around the internal space to allow the inflow into the second fixed piece 57. The purge gas between the connecting block 52 and the second fixed block 53 remains sealed.

The second coupling block 58 serves as a coupling block component coupled to the lower portion of the second nozzle block 51, the second connecting block 52, and the second fixing block 53. A plurality of second inflow holes arranged in the up and down directions are formed through the second coupling block 58 to allow the purge The gas flows into the internal space between the second nozzle block 51 and the second connecting block 52 and the internal space between the second connecting block 52 and the second fixing block 53 .

The second socket 59 serves as a connecting member connected to the lower part of the second coupling block 58 and is connected to the purge gas supply pipe, so that the purge gas flows into the inside of the second nozzle part 50 and is sprayed evenly toward the entrance and exit of the chamber part 10. Form an air curtain.

Furthermore, as shown in FIGS. 18 and 19 , the second nozzle part 50 may further include: a 21st connection block 52a, a 22nd connection block 52b, a second injection angle adjustment piece 58a, and a second injection angle rotation shaft 59a.

The 21st connection block 52a is a connection block member provided between the second nozzle block 51 and the second connection block 52, and is a diffusion device provided between the second nozzle block 51 and the second connection block 52 for allowing the inflow to The purge gas of the second nozzle block 51 is diffused, and a plurality of 21st diffusion holes are formed through the front and rear surfaces of the 21st connecting block 52a.

The 22nd connection block 52b serves as a connection block device provided between the second connection block 52 and the second fixed block 53, and is composed of a diffusion member provided between the second connection block 52 and the second fixed block 53, so that The purge gas flowing into the second connection block 52 is diffused. A plurality of 22nd diffusion holes are formed through the front and rear surfaces of the 22nd connecting block 52b.

The second injection angle adjustment piece 58a serves as an injection angle adjustment component for adjusting the injection angle of the purge gas, and includes a rotatable second injection angle rotation shaft 59a disposed between the second nozzle block 51 and the second connection block 52. The angle of the purge gas is adjusted to prevent external gas from flowing in from the inlet and outlet and prevent internal inert gas from flowing out.

The third nozzle part 60 is a nozzle component installed on the upper part of the entrance and exit of the chamber part 10, and injects purge gas to the entrance and exit to form an air curtain. As shown in FIG. 21, it consists of the third nozzle block 61, the third connection block 62, the third It is composed of a fixed block 63, a third nozzle 64, a third connecting piece 66, a third fixed piece 67, a third combining block and a third socket.

The third nozzle block 61 is a nozzle block component disposed on the upper surface of the chamber part 10, and its shape is generally a right-square columnar or substrate-shaped structure, so that it can be more easily combined on the upper surface of the chamber part 10. At the same time, injection nozzles are also formed on the front and rear surfaces and are arranged along the up and down length directions to inject purge gas to form an air curtain.

The third connection block 62 is combined with the outside of the third nozzle block 61 and serves as a connection block component connected to the inlet and outlet of the chamber part 10 . It is also a diffusion component disposed between the third nozzle block 61 and the third fixed block 63 , the purge gas flowing into the third nozzle block 61 is diffused. At the same time, a plurality of third diffusion holes are formed through the front and rear surfaces of the third connecting block 62 .

The third fixed block 63 is combined with the outside of the third connecting block 62 as a fixed block structure fixed on the entrance and exit of the chamber part 10. Its appearance is generally a right square columnar or base plate-shaped structure, so that it can be easily connected with the cavity. The upper surfaces of the entrances and exits of the chamber 10 are connected.

The third nozzle 64 is composed of a plurality of nozzle members arranged in the left and right directions through the front and rear surfaces of the third nozzle block 61 and is composed of injection nozzles. The third nozzle 64 can intensively inject the purge gas to the upper part of the inlet and outlet to form an air curtain.

As a connecting member provided between the third nozzle block 61 and the third connecting block 62, the third connecting piece 66 is composed of an airtight component and is closely attached to the surroundings of the internal space to seal the internal space between the two. The purge gas flowing between the third nozzle block 61 and the third connection block 62 is maintained airtight.

The third fixed piece 67 is a connecting member provided between the third connecting block 62 and the third fixed block 63. It is composed of a sealing member that seals the internal spaces of the two. It is provided around the internal space to allow the inflow into the third fixed piece 67. The purge gas between the connecting block 62 and the third fixed block 63 remains sealed.

The third combination block is a combination block component that is combined with the third nozzle block 61, the third connecting block 62, and the third fixing block 63. A plurality of third inflow holes are formed therethrough and are arranged in the left and right directions to allow the blower to blow. The scavenging gas flows into the internal space between the third nozzle block 61 and the third connecting block 62 and the internal space between the third connecting block 62 and the third fixed block 63 .

As a connecting member connected to the side of the third coupling block, the third socket is connected to the purge gas supply pipe, allowing the purge gas to flow into the inside of the third nozzle part 60 and at the same time spray it evenly onto the upper surface of the inlet and outlet of the chamber part 10. Form an air curtain.

In addition, the above-mentioned third nozzle part 60 may further include: a 31st connection block 62a, a 32nd connection block 62b, a third injection angle adjustment piece 68a, and a third injection angle rotation shaft 69a.

The 31st connection block 62a serves as a connection block member disposed between the third nozzle block 61 and the third connection block 62 and is also a diffusion member disposed between the third nozzle block 61 and the third connection block 62 for allowing the inflow to The purge gas of the third nozzle block 61 is diffused, and a plurality of 31st diffusion holes are formed through the front and rear surfaces of the 31st connecting block 62a.

The 32nd connection block 62b is a connection block member provided between the third connection block 62 and the third fixed block 63, and is composed of a diffusion member provided between the third connection block 62 and the third fixed block 63, so that The purge gas flowing into the third connecting block 62 is diffused, and a plurality of 32nd diffusion holes are formed through the front and rear surfaces of the 32nd connecting block 62b.

The third injection angle adjustment piece 68a serves as an injection angle adjustment component for adjusting the injection angle of the purge gas, and includes a rotatable third injection angle rotation shaft 69a disposed between the third nozzle block 61 and the third connection block 62. The angle of the purge gas is adjusted to prevent external gas from flowing in from the inlet and outlet and prevent internal inert gas from flowing out.

As shown in the above description, the present invention disposes a nozzle part in the chamber part to spray the purge gas evenly to each slit groove of the loading part, so that the humidity in the chamber part can be maintained at a stable and low level, thereby improving the efficiency of the chamber. Yield of semiconductor production.

In addition, by providing an additional heating unit at the entrance and exit of the nozzle unit, the temperature of the inert gas is increased using the heater, thereby achieving an effect of improving the management of the minimum humidity value.

Furthermore, by arranging a multi-layer nozzle section and simultaneously arranging injection nozzles on three lower surfaces of the loading section to inject inert gas, the inert gas can be injected uniformly into the entire space because the injection nozzles are provided to inject the entire space. Through concentrated diffusion at the lower part of the loader, which is fragile and sensitive to humidity, uniform and unified humidity management can be achieved for multiple wafers stored in the overall loader.

In addition, by providing seals or airtight members in the spaces between the blocks of the nozzle part, external airflow can be prevented from flowing into each space and leakage of the inert gas can be prevented.

In addition, by arranging a curtain nozzle at the entrance and exit of the chamber, an air curtain is formed at the entrance and exit, thereby removing smoke and other foreign matter after the semiconductor process is completed, preventing contamination, and thus achieving the effect of improving productivity.

In addition, by installing nozzles on the side and rear of the chamber as well as the entrance and exit, nitrogen gas is sprayed evenly, achieving a humidity management effect of less than 5%.

In addition, by providing a nozzle in the chamber, external air is blocked, particles are prevented from flowing into the chamber and contamination is caused, and the humidity inside the wafer is reduced, ultimately achieving the effect of improving productivity.

In addition, by combining the diffusion block and the connecting block in a multi-layered manner, the purge gas is sprayed uniformly to the nozzle part to diffuse it, and then the advancing space is adjusted according to the state of the external air, thereby creating a fluid laminar flow section that blocks external air. .

In addition, the fluid that temporarily flows in from the fluid inlet is evenly dispersed in the fluid flow diffusion space, thereby achieving the effect of stable flow injection of the laminar flow nozzle (Laminar Flow Nozzle).

In addition, by purging the inert fluid using curtain nozzles that form laminar flow on the left, right and upper parts of the chamber, the pressure and flow rate of the purge gas are adjusted, and the purge gas is sprayed in a constant shape. This not only improves the efficiency of the external air The blocking effect can also prevent the injected inert gas from flowing out from the inside of the chamber to the greatest extent.

Furthermore, by adjusting the injection angle of the curtain nozzle part, the inert fluid injected from both sides is prevented from colliding with each other and flowing into the interior of the chamber part, thereby achieving this effect.

The above description of the present invention is based on technical ideas or main technical features, and may be implemented in various modifications. Therefore, all points in the above-described embodiments are mere embodiments, but are not limited thereto.

10: Chamber Department 110:Load port module 120:Wafer container 130:Fan filter unit 140:Wafer transfer room 160:Transfer unit 170: processing space 150:Transfer tools 180: Buffer chamber 20:Loading Department 30: First nozzle part 30a: 11th nozzle substrate 30b: 12th nozzle substrate 30c: 13th nozzle substrate 31: First nozzle block 32: First fixed block 33:First upper nozzle 34:First lower nozzle 35: First combination block 36:First socket 37: First connecting piece 38: First sealing piece 40:Heating part 50: Second nozzle part 50a: 21st nozzle substrate 50b: 22nd nozzle substrate 51: Second nozzle block 52: Second connection block 52a: 21st connection block 52b: 22nd connection block 53:Second fixed block 54:Second nozzle 55:Second combination piece 56:Second connecting piece 57:Second fixed piece 58: Second combination block 58a: Second injection angle adjustment piece 59a: Second injection angle rotation axis 59:Second socket 60: The third nozzle part 61:Third nozzle block 62: The third connection block 62a: 31st connection block 62b: 32nd connection block 63:Third fixed block 64:Third nozzle 66:Third connecting piece 67:Third fixed piece 68a: Third injection angle adjustment piece 69a: Third injection angle rotation axis

[Fig. 1] Fig. 1 is a structural diagram illustrating a semiconductor processing apparatus having an EFEM buffer chamber device in one embodiment of the present invention. [Fig. 2] Fig. 2 is a structural diagram illustrating a semiconductor processing apparatus having an EFEM buffer chamber device in one embodiment of the present invention. [Fig. 3] Fig. 3 is a plan view illustrating a semiconductor processing apparatus having an EFEM buffer chamber device in one embodiment of the present invention. [Fig. 4] Fig. 4 is a structural diagram illustrating an EFEM buffer chamber device in one embodiment of the present invention. [Fig. 5] Fig. 5 is an exploded view illustrating the EFEM buffer chamber device in one embodiment of the present invention. [Fig. 6] Fig. 6 is a structural diagram illustrating the first nozzle portion of the EFEM buffer chamber device in one embodiment of the present invention. [Fig. 7] Fig. 7 is an exploded view illustrating the first nozzle portion of the EFEM buffer chamber device in one embodiment of the present invention. [Fig. 8] Fig. 8 is a structural diagram illustrating the second nozzle portion of the EFEM buffer chamber device in one embodiment of the present invention. [Fig. 9] Fig. 9 is an exploded view illustrating the second nozzle portion of the EFEM buffer chamber device in one embodiment of the present invention. [Fig. 10] Fig. 10 is a plan view illustrating the filled state of the EFEM buffer chamber device in one embodiment of the present invention. [Fig. 11] Fig. 11 is a plan view illustrating the exhaust state of the EFEM buffer chamber device in one embodiment of the present invention. [Fig. 12] Fig. 12 is a state diagram illustrating the filling state of the EFEM buffer chamber device in one embodiment of the present invention. [Fig. 13] Fig. 13 is a state diagram illustrating the exhaust state of the EFEM buffer chamber device in one embodiment of the present invention. [Fig. 14] Fig. 14 is an exploded view illustrating a modified embodiment of the EFEM buffer chamber device in one embodiment of the present invention. [Fig. 15] Fig. 15 is a structural diagram illustrating the first nozzle portion of the EFEM buffer chamber device in a modified embodiment state according to one embodiment of the present invention. [Fig. 16] Fig. 16 is a front view illustrating the first nozzle portion of the EFEM buffer chamber device according to one embodiment of the present invention in a modified embodiment. [Fig. 17] Fig. 17 is an exploded view illustrating the first nozzle portion of the EFEM buffer chamber device according to one embodiment of the present invention in a modified embodiment. [Fig. 18] Fig. 18 is an exploded view illustrating another embodiment of the EFEM buffer chamber device according to one embodiment of the present invention. [Fig. 19] Fig. 19 is a structural diagram illustrating another embodiment of the second nozzle portion of the EFEM buffer chamber device in one embodiment of the present invention. [Fig. 20] Fig. 20 is an exploded view illustrating another embodiment of the second nozzle portion of the EFEM buffer chamber device according to another embodiment of the present invention. [Fig. 21] Fig. 21 is an exploded view illustrating the third nozzle portion of the EFEM buffer chamber device according to one embodiment of the present invention.

10: Chamber Department

20:Loading Department

30: First nozzle part

30a: 11th nozzle substrate

30b: 12th nozzle substrate

30c: 13th nozzle substrate

40:Heating part

50: Second nozzle part

Claims (13)

An Equipment Front End Module (EFEM) buffer chamber device, which is installed in the EFEM transfer chamber and is used to buffer and transfer wafers. It is characterized by including: The chamber part (10) has an entrance and exit for wafers in and out of the front, and a loading space is formed inside, which can load multiple wafers; The loading part (20) is provided in the chamber part (10) and formed with multi-layered slits, which can load and accommodate multiple wafers in the up and down direction; and The curtain nozzle part is provided at the entrance and exit of the chamber part (10), and injects purge gas into the entrance and exit to form an air curtain. The EFEM buffer chamber device according to claim 1, wherein the curtain nozzle part includes: a second nozzle part (50), which is disposed at both ends of the entrance and exit of the chamber part (10), facing toward the entrance and exit. The purge gas is injected to form an air curtain. The EFEM buffer chamber device according to claim 2, wherein the second nozzle part (50) includes: The second nozzle block is provided on the entrance and exit side of the chamber part (10); a second connection block, combined with the outside of the second nozzle block, and connected with the inlet and outlet side of the chamber part (10); A second fixed block is combined with the outside of the second connecting block and fixed to the entrance and exit side of the chamber part (10); and A plurality of second nozzles are arranged at the front and rear of the second nozzle block and present a linear arrangement structure. The EFEM buffer chamber device according to claim 3, wherein the second nozzle part (50) further includes: a second injection angle adjustment piece disposed between the second nozzle block and the second connection block. time, and can be rotated and the injection angle of the purge gas can be adjusted. The EFEM buffer chamber device according to claim 1, wherein the curtain nozzle part includes: a third nozzle part (60), which is disposed above the entrance and exit of the chamber part (10) and sprays and purges towards the entrance and exit. gas to form an air curtain. The EFEM buffer chamber device according to claim 5, wherein the third nozzle part (60) includes: The third nozzle block is arranged above the entrance and exit of the chamber part (10); A third connection block is combined with the outside of the third nozzle block and connected to the upper surface of the entrance and exit of the chamber part (10); A third fixed block is combined with the outside of the third connecting block and fixed on the top of the entrance and exit of the chamber part (10); and A plurality of third nozzles are arranged at the front and rear of the third nozzle block, showing a linear arrangement structure. The EFEM buffer chamber device according to claim 6, wherein the third nozzle part (60) further includes: a third injection angle adjustment piece disposed between the third nozzle block and the third connection block. time, and can be rotated and the injection angle of the purge gas can be adjusted. The EFEM buffer chamber device as described in claim 1, further comprising: The first nozzle part (30) is formed through and installed outside the chamber part (10), and injects purge gas from the outside of the chamber part (10) to the multiple layers of the loading part (20). slit. The EFEM buffer chamber device as described in claim 8, further comprising: Heating parts (40) are respectively provided at both ends of the first nozzle part (30), and heat the purge gas injected from the outside. The EFEM buffer chamber device according to claim 8, wherein the first nozzle part (30) includes: An 11th nozzle substrate is provided on one side of the chamber part (10) and injects purge gas; A twelfth nozzle substrate is provided on the other side of the chamber part (10) and injects purge gas; The 13th nozzle substrate is provided behind the chamber part (10) and injects purge gas. The EFEM buffer chamber device according to claim 8, wherein the first nozzle part (30) includes: The first nozzle block is arranged on the side or rear of the chamber part (10); A first fixing block, combined with the outside of the first nozzle block, and fixed to the side or rear of the chamber part (10); A plurality of first upper nozzles are formed through and arranged on the upper portion of the front and back of the first nozzle block; and A plurality of first lower nozzles are formed through and provided at the lower portion of the front and rear surfaces of the first nozzle block, and inject with an injection amount and injection pressure greater than those of the first upper nozzles. The EFEM buffer chamber device according to claim 11, wherein the size of the injection hole of the first lower nozzle is larger than that of the first upper nozzle, or the number of injection holes is greater than that of the first upper nozzle . A semiconductor processing equipment, characterized by including the EFEM buffer chamber device described in claim 1.