TW202332998A - 投射曝光裝置與用於操作此投射曝光裝置的方法 - Google Patents
投射曝光裝置與用於操作此投射曝光裝置的方法 Download PDFInfo
- Publication number
- TW202332998A TW202332998A TW111140249A TW111140249A TW202332998A TW 202332998 A TW202332998 A TW 202332998A TW 111140249 A TW111140249 A TW 111140249A TW 111140249 A TW111140249 A TW 111140249A TW 202332998 A TW202332998 A TW 202332998A
- Authority
- TW
- Taiwan
- Prior art keywords
- pressure
- projection exposure
- exposure device
- housing
- optical
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 6
- 230000003287 optical effect Effects 0.000 claims abstract description 114
- 239000012528 membrane Substances 0.000 claims description 39
- 229910052739 hydrogen Inorganic materials 0.000 claims description 19
- 239000001257 hydrogen Substances 0.000 claims description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 17
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 238000001459 lithography Methods 0.000 claims description 7
- 230000001419 dependent effect Effects 0.000 claims description 5
- 230000008859 change Effects 0.000 description 24
- 230000005855 radiation Effects 0.000 description 21
- 239000007789 gas Substances 0.000 description 20
- 238000011109 contamination Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 230000008901 benefit Effects 0.000 description 11
- 238000005253 cladding Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000011247 coating layer Substances 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003306 harvesting Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 239000004038 photonic crystal Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000009878 intermolecular interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012621 metal-organic framework Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L11/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
- G01L11/02—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by optical means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102021212018.0 | 2021-10-25 | ||
| DE102021212018.0A DE102021212018B3 (de) | 2021-10-25 | 2021-10-25 | Projektionsbelichtungsanlage, Verfahren zum Betreiben der Projektionsbelichtungsanlage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202332998A true TW202332998A (zh) | 2023-08-16 |
Family
ID=83692382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111140249A TW202332998A (zh) | 2021-10-25 | 2022-10-24 | 投射曝光裝置與用於操作此投射曝光裝置的方法 |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE102021212018B3 (fr) |
| TW (1) | TW202332998A (fr) |
| WO (1) | WO2023072745A1 (fr) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5087124A (en) * | 1989-05-09 | 1992-02-11 | Smith Rosemary L | Interferometric pressure sensor capable of high temperature operation and method of fabrication |
| KR20010023314A (ko) | 1997-08-26 | 2001-03-26 | 오노 시게오 | 노광 장치, 노광 방법, 투영 광학계의 압력 조정 방법 및노광 장치의 조립 방법 |
| TW548524B (en) | 2000-09-04 | 2003-08-21 | Asm Lithography Bv | Lithographic projection apparatus, device manufacturing method and device manufactured thereby |
| US7272976B2 (en) | 2004-03-30 | 2007-09-25 | Asml Holdings N.V. | Pressure sensor |
| DE102006044591A1 (de) | 2006-09-19 | 2008-04-03 | Carl Zeiss Smt Ag | Optische Anordnung, insbesondere Projektionsbelichtungsanlage für die EUV-Lithographie, sowie reflektives optisches Element mit verminderter Kontamination |
| KR101929864B1 (ko) | 2009-07-31 | 2018-12-17 | 에이에스엠엘 홀딩 엔.브이. | 저압 및 고압 근접 센서 |
| DE102011086457A1 (de) * | 2011-11-16 | 2012-12-20 | Carl Zeiss Smt Gmbh | Euv-abbildungsvorrichtung |
| NL2017595A (en) | 2015-11-10 | 2017-05-26 | Asml Netherlands Bv | Proximity sensor, lithographic apparatus and device manufacturing method |
| NL2019141A (en) * | 2016-07-21 | 2018-01-25 | Asml Netherlands Bv | Lithographic Method |
| DE102018206418A1 (de) * | 2018-04-25 | 2018-08-09 | Carl Zeiss Smt Gmbh | Elektrische Baugruppe, Elektronikgehäuse und Projektionsbelichtungsanlage |
-
2021
- 2021-10-25 DE DE102021212018.0A patent/DE102021212018B3/de active Active
-
2022
- 2022-10-21 WO PCT/EP2022/079334 patent/WO2023072745A1/fr unknown
- 2022-10-24 TW TW111140249A patent/TW202332998A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023072745A1 (fr) | 2023-05-04 |
| DE102021212018B3 (de) | 2022-11-10 |
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