TW202331874A - Chip inspection method for suitably evaluating chips formed by dicing workpiece - Google Patents
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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Abstract
Description
本發明係關於一種晶片的檢查方法，其檢查藉由分割被加工物所形成之晶片。The present invention relates to a wafer inspection method for inspecting a wafer formed by dividing a workpiece.
在元件晶片的製程中係使用在藉由互相交叉之多條切割道（分割預定線）所劃分之多個區域中分別形成有元件之晶圓。藉由將此晶圓沿著切割道進行分割，而能得到分別具備元件之多個元件晶片。元件晶片被組裝至行動電話、個人電腦等各種電子設備。In the manufacturing process of a device wafer, a wafer in which devices are respectively formed in a plurality of regions divided by a plurality of dicing lines (segmentation planning lines) intersecting each other is used. By dividing this wafer along dicing lines, a plurality of element wafers each having an element can be obtained. Component wafers are assembled into various electronic devices such as mobile phones and personal computers.
晶圓的分割例如係使用切割裝置。切割裝置具備：卡盤台，其保持被加工物；以及切割單元，其切割被加工物。在切割單元中內建有主軸，且在主軸的前端部裝設環狀的切割刀片。以卡盤台保持晶圓，使切割刀片一邊旋轉一邊切入晶圓，藉此將晶圓進行切割而分割成多個元件晶片。Dividing of the wafer uses, for example, a dicing device. The cutting device includes: a chuck table that holds a workpiece; and a cutting unit that cuts the workpiece. A main shaft is built in the cutting unit, and an annular cutting blade is installed on the front end of the main shaft. The wafer is held by a chuck table, and the dicing blade is rotated while cutting into the wafer, thereby dicing the wafer and dividing it into a plurality of element wafers.
又，近年來，亦正開發藉由雷射加工而分割晶圓之製程。例如，一邊使對晶圓具有穿透性之雷射光束在晶圓的內部聚光，一邊將雷射光束沿著切割道進行掃描，藉此在晶圓的內部沿著切割道形成改質層。晶圓的形成有改質層之區域相較於其他區域變脆。因此，若對形成有改質層之晶圓施加外力，則改質層發揮作為分割起點的功能，而將晶圓沿著切割道進行分割。In addition, in recent years, a process of dividing a wafer by laser processing is also being developed. For example, the modified layer is formed inside the wafer along the scribe line by scanning the laser beam along the scribe line while focusing the laser beam penetrating the wafer inside the wafer. . The area of the wafer where the modified layer is formed is more brittle than other areas. Therefore, when an external force is applied to the wafer on which the modified layer is formed, the modified layer functions as a starting point for splitting, and the wafer is split along the dicing lanes.
在分割晶圓後，實施確認各元件晶片的抗撓強度（彎曲強度）是否滿足預定的基準之檢查，僅將滿足基準之元件晶片安裝於產品。又，在形成有不滿足預定的基準的元件晶片之情形中，以將後續製造之元件晶片的抗撓強度維持在固定以上之方式，重設晶圓的加工條件。After the wafer is divided, an inspection is carried out to confirm whether the flexural strength (bending strength) of each element chip satisfies a predetermined standard, and only the element chip that meets the standard is mounted on the product. Also, when an element wafer that does not satisfy the predetermined standard is formed, the processing conditions of the wafer are reset so that the flexural strength of the element wafer manufactured later is maintained at a fixed level or higher.
在測量元件晶片的抗撓強度時，將晶圓分割成多個元件晶片後，作業者需要重複以下作業：使用鑷子等以手動作業逐一拾取元件晶片並搬送至進行測量抗撓強度之測量裝置。因此，元件晶片的檢查係作業繁雜。又，若以手動作業進行元件晶片的搬送，則有元件晶片的配置產生偏差或誤傷元件晶片之疑慮。When measuring the flexural strength of a component wafer, after the wafer is divided into multiple component chips, the operator needs to repeat the following operations: use tweezers or the like to manually pick up the component chips one by one and transport them to the measuring device for measuring the flexural strength. Therefore, the inspection system of the element wafer is complicated. In addition, if the device wafers are transferred manually, there is a possibility that the arrangement of the device wafers may deviate or the device wafers may be accidentally damaged.
於是，在元件晶片的抗撓強度的測量中，有時會使用專用的檢查裝置。例如，在專利文獻1中揭示了一種檢查裝置（試驗裝置），其自動地實施用於測量元件晶片的抗撓強度之一系列作業（拾取、搬送、測量等）。 [習知技術文獻] [專利文獻] Therefore, a dedicated inspection device may be used for measuring the flexural strength of an element wafer. For example, Patent Document 1 discloses an inspection device (test device) that automatically performs a series of operations (pick-up, transfer, measurement, etc.) for measuring the flexural strength of a device wafer. [Prior art literature] [Patent Document]
[專利文獻1]日本特開2021-5678號公報[Patent Document 1] Japanese Patent Laid-Open No. 2021-5678
[發明所欲解決的課題] 在以如上述般的檢查裝置檢查藉由分割晶圓等被加工物分割所得之晶片之情形中，根據藉由檢查裝置所測量之抗撓強度的值是否在預先所設定之容許範圍內而評價晶片。然後，抗撓強度的值超出容許範圍的晶片則作為不良晶片而從產品用晶片排除。 [Problems to be Solved by the Invention] In the case of inspecting wafers obtained by dividing workpieces such as wafers with an inspection device as described above, it is evaluated based on whether the value of the flexural strength measured by the inspection device is within the allowable range set in advance wafer. Then, the wafer whose flexural strength value exceeds the allowable range is excluded from the product wafer as a defective wafer.
然而，僅確認藉由檢查裝置所測量之晶片的抗撓強度，會有作為實際的晶片強度的評價並不充分之情形。例如，未適當地設定分割被加工物時的加工條件之情形，即使晶片的抗撓強度的值落入容許範圍內，有時也會在晶片的內部殘留非預期的加工痕。然後，在之後的晶片的安裝製程、將晶片組裝至產品後的階段中，由加工痕所導致之晶片的強度降低會明顯化，在晶片被施加突發性衝擊時，會有加工痕成為契機而晶片損壞之疑慮。However, only confirming the flexural strength of the wafer measured by the inspection device may not be sufficient for evaluating the actual wafer strength. For example, if the processing conditions for dividing the workpiece are not properly set, unexpected processing marks may remain inside the wafer even if the value of the flexural strength of the wafer falls within the allowable range. Then, in the subsequent chip mounting process and the stage after the chip is assembled into the product, the strength reduction of the chip caused by the processing mark will become obvious. When the chip is subjected to a sudden impact, the processing mark will become an opportunity And the doubts about chip damage.
本發明係鑒於所述問題而完成，目的在於提供一種晶片的檢查方法，其可適當地評價藉由分割被加工物所形成之晶片。The present invention has been made in view of the above problems, and an object of the present invention is to provide a wafer inspection method capable of appropriately evaluating a wafer formed by dividing a workpiece.
[解決課題的技術手段] 根據本發明之一態樣，提供一種晶片的檢查方法，其包含：分割步驟，其藉由將被加工物以預定的分割加工條件進行加工，而將該被加工物分割成多個晶片；攝像步驟，其藉由拍攝該晶片的側面，而取得顯示該晶片的側面之側面影像；以及檢查步驟，其藉由將從該側面影像所提取之評價值與閾值進行比較，而檢查該晶片的狀態。 [Technical means to solve the problem] According to one aspect of the present invention, there is provided a wafer inspection method, which includes: a dividing step, which divides the workpiece into a plurality of wafers by processing the workpiece under predetermined dividing processing conditions; a step of obtaining a silhouette image showing the side surface of the wafer by photographing the side surface of the wafer; and an inspection step of inspecting the state of the wafer by comparing an evaluation value extracted from the silhouette image with a threshold value .
又，根據本發明之另一態樣，可提供一種晶片的檢查方法，其包含：第一分割步驟，其藉由將多個第一被加工物以多個加工條件進行加工，而將該第一被加工物分別分割成多個第一晶片；第一攝像步驟，其藉由拍攝該第一晶片的側面，而取得顯示該第一晶片的側面之第一側面影像；測量步驟，其測量該第一晶片的抗撓強度；分割加工條件設定步驟，其將多個該加工條件之中能形成抗撓強度最高之該第一晶片的加工條件設定成分割加工條件；基準影像設定步驟，其將顯示藉由將該第一被加工物以該分割加工條件進行加工所形成之該第一晶片的側面之該第一側面影像設定成基準影像；閾值設定步驟，其設定從該基準影像所提取之評價值的閾值；第二分割步驟，其藉由將第二被加工物以該分割加工條件進行加工，而將該第二被加工物分割成多個第二晶片；第二攝像步驟，其藉由拍攝該第二晶片的側面，而取得顯示該第二晶片的側面之第二側面影像；以及檢查步驟，其藉由將從該第二側面影像所提取之評價值與該閾值進行比較，而檢查該第二晶片的狀態。Also, according to another aspect of the present invention, there is provided a wafer inspection method, which includes: a first dividing step, by processing a plurality of first workpieces under a plurality of processing conditions, and processing the first objects A workpiece is divided into a plurality of first wafers; a first imaging step, which obtains a first side image showing the side of the first wafer by photographing the side of the first wafer; a measuring step, which measures the The flexural strength of the first wafer; the split processing condition setting step, which sets the processing condition that can form the first wafer with the highest flexural strength among a plurality of the processing conditions as the split processing condition; the reference image setting step, which sets setting the first side image showing the side surface of the first wafer formed by processing the first workpiece under the split processing conditions as a reference image; a threshold value setting step of setting a value extracted from the reference image the threshold value of the evaluation value; the second dividing step, which divides the second workpiece into a plurality of second wafers by processing the second workpiece under the division processing conditions; the second imaging step, by obtaining a second side image showing the side of the second wafer by photographing the side of the second wafer; and an inspection step of comparing an evaluation value extracted from the second side image with the threshold value, The status of the second wafer is checked.
此外，較佳為，該分割步驟包含：改質層形成步驟，其藉由沿著切割道照射對該被加工物具有穿透性之雷射光束，而在該被加工物的內部沿著該切割道形成改質層；以及外力施加步驟，其藉由對該被加工物施加外力，而以該改質層為起點，將該被加工物沿著該切割道進行分割。又，較佳為，該評價值係與在該側面影像的顯示該改質層之區域中之階度對應之值，或與該側面影像所顯示之該改質層的位置對應之值。In addition, preferably, the dividing step includes: a modified layer forming step of irradiating a laser beam penetrating the workpiece along the cutting line, and forming The modified layer is formed by the cutting line; and the external force applying step divides the processed object along the cutting line with the modified layer as a starting point by applying an external force to the workpiece. Also, preferably, the evaluation value is a value corresponding to the gradation in the region of the modified layer in the silhouette image, or a value corresponding to the position of the modified layer displayed in the silhouette image.
[發明功效] 在本發明的一態樣之晶片的檢查方法中，根據從顯示晶片的側面之側面影像所提取之評價值而檢查晶片的狀態。藉此，更詳細地掌握在僅測量晶片的抗撓強度時不足以進行評價之晶片的狀態，而變得能對藉由分割被加工物所得之晶片進行適當的品質評價。 [Efficacy of the invention] In the method of inspecting a wafer according to one aspect of the present invention, the state of the wafer is inspected based on the evaluation value extracted from the side image showing the side surface of the wafer. Thereby, the state of the wafer, which is insufficient for evaluation only by measuring the flexural strength of the wafer, can be grasped in more detail, and it becomes possible to perform appropriate quality evaluation of the wafer obtained by dividing the workpiece.
以下，參照附加圖式而說明本發明的實施方式。首先，針對本實施方式之晶片的檢查方法所能使用之被加工物及檢查裝置的構成例進行說明。Hereinafter, embodiments of the present invention will be described with reference to the attached drawings. First, a configuration example of a workpiece and an inspection apparatus that can be used in the wafer inspection method of this embodiment will be described.
＜被加工物的構成例＞ 圖1（A）係表示被加工物11之立體圖。例如，被加工物11係以單晶矽等半導體材料而成之圓盤狀的晶圓，且具備互相大致平行的正面（第一面）11a及背面（第二面）11b。 ＜Composition example of workpiece＞ FIG. 1(A) is a perspective view showing a workpiece 11 . For example, the workpiece 11 is a disk-shaped wafer made of a semiconductor material such as single crystal silicon, and has a front surface (first surface) 11a and a rear surface (second surface) 11b substantially parallel to each other.
被加工物11係藉由以互相交叉的方式排列成網格狀之多條切割道（分割預定線）13而被劃分成多個矩形狀的區域。又，在被加工物11的正面11a側的藉由切割道13所劃分之區域中，分別形成有IC（Integrated Circuit，積體電路）、LSI（Large Scale Integration，大型積體電路）、LED（Light Emitting Diode，發光二極體）、MEMS（Micro Electro Mechanical Systems，微機電系統）元件等元件15。The workpiece 11 is divided into a plurality of rectangular regions by a plurality of slits (planned division lines) 13 arranged in a grid to intersect each other. In addition, IC (Integrated Circuit, integrated circuit), LSI (Large Scale Integration, large scale integrated circuit), LED ( Light Emitting Diode, light emitting diode), MEMS (Micro Electro Mechanical Systems, microelectromechanical systems) components and other components15.
但是，被加工物11的材質、形狀、構造、大小等並無限制。例如，被加工物11亦可為由矽以外的半導體（GaAs、InP、GaN、SiC等）、玻璃、陶瓷、樹脂、金屬等而成之基板（晶圓）。又，元件15的種類、數量、形狀、構造、大小、排列等亦無限制。However, the material, shape, structure, size, etc. of the workpiece 11 are not limited. For example, the workpiece 11 may be a substrate (wafer) made of a semiconductor other than silicon (GaAs, InP, GaN, SiC, etc.), glass, ceramics, resin, metal, or the like. Also, the type, number, shape, structure, size, arrangement, etc. of the elements 15 are not limited.
被加工物11係被切割裝置、雷射加工裝置等各種加工裝置加工，並沿著切割道13被分割。在以加工裝置加工被加工物11時，為了便於被加工物11的處理（搬送、保持、加工等），而藉由環狀的框架17支撐被加工物11。框架17例如係由SUS（不鏽鋼）等金屬而成，在框架17的中央部設有在厚度方向貫通框架17之圓形的開口17a。此外，開口17a的直徑大於被加工物11的直徑。The workpiece 11 is processed by various processing devices such as a cutting device and a laser processing device, and is divided along the scribe line 13 . When the workpiece 11 is processed by the processing device, the workpiece 11 is supported by the ring-shaped frame 17 in order to facilitate handling (transportation, holding, processing, etc.) of the workpiece 11 . The frame 17 is made of metal such as SUS (stainless steel), for example, and a circular opening 17 a penetrating the frame 17 in the thickness direction is provided at the center of the frame 17 . In addition, the diameter of the opening 17 a is larger than the diameter of the workpiece 11 .
在被加工物11及框架17貼附膠膜19。膠膜19包含被形成為圓形之薄膜狀的基材與設置於基材上之黏著層（糊層）。例如，基材係由聚烯烴、聚氯乙烯、聚對苯二甲酸乙二酯等樹脂而成，黏著層係由環氧系、丙烯酸系或橡膠系的接著劑等而成。An adhesive film 19 is attached to the workpiece 11 and the frame 17 . The adhesive film 19 includes a circular film-like substrate and an adhesive layer (paste layer) provided on the substrate. For example, the base material is made of polyolefin, polyvinyl chloride, polyethylene terephthalate and other resins, and the adhesive layer is made of epoxy-based, acrylic-based or rubber-based adhesives.
在將被加工物11配置於框架17的開口17a的內側之狀態下，將膠膜19的中央部貼附於被加工物11的背面11b側，且將膠膜19的外周部貼附於框架17。藉此，被加工物11係透過膠膜19而被框架17支撐，而構成包含被加工物11、框架17及膠膜19之被加工物單元（框架單元）。With the workpiece 11 disposed inside the opening 17a of the frame 17, the central portion of the adhesive film 19 is attached to the back surface 11b side of the workpiece 11, and the outer peripheral portion of the adhesive film 19 is attached to the frame. 17. Thereby, the workpiece 11 is supported by the frame 17 through the adhesive film 19 , and a workpiece unit (frame unit) including the workpiece 11 , the frame 17 and the adhesive film 19 is constituted.
圖1（B）係表示已被分割成多個晶片21之被加工物11之立體圖。藉由將被加工物11沿著切割道13進行分割，而製造分別具備元件15之多個晶片21（元件晶片）。此外，針對被加工物11的分割方法的具體例，將於後述（參照圖16、圖17（A）、圖17（B））。FIG. 1(B) is a perspective view showing a workpiece 11 divided into a plurality of wafers 21 . By dividing the workpiece 11 along the dicing line 13 , a plurality of wafers 21 (element wafers) each including the elements 15 are manufactured. In addition, a specific example of a method for dividing the workpiece 11 will be described later (see FIG. 16 , FIG. 17(A), and FIG. 17(B)).
多個晶片21分別在後續步驟中被從膠膜19剝離並被拾取。因此，膠膜19較佳為具有藉由實施預定的處理而接著力降低之性質。例如，膠膜19包含以紫外線硬化性樹脂而成之黏著層。此情形，藉由對膠膜19照射紫外線，而使膠膜19對於晶片21之接著力降低，變得容易從膠膜19剝離晶片21。The plurality of wafers 21 are respectively peeled from the adhesive film 19 and picked up in subsequent steps. Therefore, it is preferable that the adhesive film 19 has a property in which the adhesive force is reduced by performing a predetermined treatment. For example, the adhesive film 19 includes an adhesive layer made of ultraviolet curable resin. In this case, by irradiating the adhesive film 19 with ultraviolet rays, the adhesive force of the adhesive film 19 to the wafer 21 is lowered, and the wafer 21 is easily peeled off from the adhesive film 19 .
＜檢查裝置的構成例＞ 接著，針對檢查藉由分割被加工物11所形成之晶片21之檢查裝置（測量裝置、試驗裝置）的構成例進行說明。圖2係表示檢查裝置2之立體圖。又，為了便於說明，圖3係省略構成要素的一部分（後述的拾取機構70及筒夾移動機構80）而表示檢查裝置2之立體圖。在圖2及圖3中，X軸方向（第一水平方向、左右方向）與Y軸方向（第二水平方向、前後方向）係互相垂直的方向。又，Z軸方向（鉛直方向、高度方向、上下方向）係與X軸方向及Y軸方向垂直的方向。 <Configuration example of inspection device> Next, a configuration example of an inspection device (measurement device, test device) for inspecting the wafer 21 formed by dividing the workpiece 11 will be described. FIG. 2 is a perspective view showing the inspection device 2 . 3 is a perspective view of the inspection device 2 , omitting some components (a pickup mechanism 70 and a collet moving mechanism 80 described later) for convenience of description. In FIG. 2 and FIG. 3 , the X-axis direction (first horizontal direction, left-right direction) and the Y-axis direction (second horizontal direction, front-rear direction) are mutually perpendicular directions. Also, the Z-axis direction (vertical direction, height direction, up-down direction) is a direction perpendicular to the X-axis direction and the Y-axis direction.
檢查裝置2具備基台4，所述基台4支撐構成檢查裝置2之各構成要素。如圖3所示，在基台4的前端側的角部設有矩形狀的開口4a。又，在開口4a的內側配置有藉由升降機構（未圖示）而升降之卡匣載置台6。在卡匣載置台6的上表面上載置能容納多個被加工物11的卡匣8。此外，在圖2及圖3中僅以虛線表示卡匣8的輪廓。The inspection device 2 includes a base 4 that supports each component constituting the inspection device 2 . As shown in FIG. 3 , a rectangular opening 4 a is provided at a corner portion on the front end side of the base 4 . Moreover, the cassette mounting table 6 raised and lowered by the lifting mechanism (not shown) is arrange|positioned inside the opening 4a. A cassette 8 capable of accommodating a plurality of workpieces 11 is placed on the upper surface of the cassette mounting table 6 . In addition, only the outline of the cassette 8 is shown by the dotted line in FIG.2 and FIG.3.
已被分割成多個晶片21之被加工物11（參照圖1（B））係在被框架17支撐之狀態下被容納於卡匣8。此外，在將被加工物11容納於卡匣8之前，亦可視需要而實施使膠膜19的接著力降低之處理（照射紫外線等）。The workpiece 11 divided into a plurality of wafers 21 (see FIG. 1(B) ) is accommodated in the cassette 8 while being supported by the frame 17 . In addition, before storing the workpiece 11 in the cassette 8 , a process for reducing the adhesive force of the adhesive film 19 (irradiation of ultraviolet rays, etc.) may be performed as needed.
如圖3所示，在卡匣載置台6的後方側設有暫置被加工物11之暫置機構10。暫置機構10具備互相大致平行地配置之一對導軌12。一對導軌12分別具備與水平面（XY平面）大致平行的第一支撐面12a及第二支撐面12b。As shown in FIG. 3 , a temporary placement mechanism 10 for temporarily placing a workpiece 11 is provided on the rear side of the cassette placement table 6 . The temporary storage mechanism 10 includes a pair of guide rails 12 arranged substantially parallel to each other. The pair of guide rails 12 each includes a first support surface 12 a and a second support surface 12 b substantially parallel to a horizontal plane (XY plane).
第一支撐面12a分別以與第二支撐面12b重疊的方式配置於第二支撐面12b的上方。而且，一對第一支撐面12a與一對第二支撐面12b分別支撐框架17的下表面側，所述框架17支撐著被加工物11。例如，一對第一支撐面12a支撐已從卡匣8搬出之被加工物11，一對第二支撐面12b支撐搬入卡匣8之被加工物11。The first support surfaces 12a are respectively disposed above the second support surfaces 12b so as to overlap with the second support surfaces 12b. Furthermore, the pair of first support surfaces 12 a and the pair of second support surfaces 12 b respectively support the lower surface side of the frame 17 that supports the workpiece 11 . For example, the pair of first support surfaces 12 a supports the workpiece 11 carried out from the cassette 8 , and the pair of second support surfaces 12 b supports the workpiece 11 carried into the cassette 8 .
在暫置機構10的後方設有固定框架17之框架固定機構14，所述框架17支撐著被加工物11。框架固定機構14具備：框架支撐部16，其支撐框架17的下表面側；以及框架按壓部18，其配置於框架支撐部16的上方。框架支撐部16及框架按壓部18係與框架17的形狀對應而被形成為環狀，且以互相重疊的方式配置。A frame fixing mechanism 14 for fixing a frame 17 is provided behind the temporary mechanism 10, and the frame 17 supports the workpiece 11. The frame fixing mechanism 14 includes a frame support portion 16 that supports the lower surface side of the frame 17 , and a frame pressing portion 18 that is disposed above the frame support portion 16 . The frame support portion 16 and the frame pressing portion 18 are formed in a ring shape corresponding to the shape of the frame 17 and arranged to overlap each other.
框架支撐部16被構成為能沿著Z軸方向移動（升降）。在框架17被框架支撐部16支撐之狀態下，若使框架支撐部16往上方移動，則框架17的上表面側會接觸於框架按壓部18。藉此，框架17被框架支撐部16與框架按壓部18夾住並固定。此時，藉由判定框架支撐部16與框架按壓部18是否透過框架17導通，而可確認框架17是否被框架固定機構14適當地固定。The frame support portion 16 is configured to be movable (raised and lowered) along the Z-axis direction. When the frame 17 is supported by the frame support portion 16 , when the frame support portion 16 is moved upward, the upper surface side of the frame 17 comes into contact with the frame pressing portion 18 . Thereby, the frame 17 is sandwiched and fixed by the frame support portion 16 and the frame pressing portion 18 . At this time, whether the frame 17 is properly fixed by the frame fixing mechanism 14 can be confirmed by judging whether the frame support portion 16 and the frame pressing portion 18 are connected through the frame 17 .
在暫置機構10及框架支撐部16的上方設有搬送機構20，所述搬送機構20係在卡匣8與框架固定機構14之間搬送被加工物11。搬送機構20被構成為能沿著Y軸方向及Z軸方向移動，並具備從上下握持框架17之第一握持部22a及第二握持部22b。第一握持部22a設於搬送機構20的前端部，第二握持部22b設於搬送機構20的後端部。A transport mechanism 20 is provided above the temporary storage mechanism 10 and the frame support portion 16 , and the transport mechanism 20 transports the workpiece 11 between the cassette 8 and the frame fixing mechanism 14 . The transport mechanism 20 is configured to be movable in the Y-axis direction and the Z-axis direction, and includes a first gripping portion 22a and a second gripping portion 22b for gripping the frame 17 from up and down. The first gripping portion 22 a is provided at the front end of the transport mechanism 20 , and the second gripping portion 22 b is provided at the rear end of the transport mechanism 20 .
在從卡匣8搬出被加工物11時，在以第一握持部22a握持被容納於卡匣8之框架17的端部之狀態下，使搬送機構20沿著Y軸方向移動至暫置機構10側。藉此，將被加工物11從卡匣8拉出，並配置於一對第一支撐面12a上。之後，解除由第一握持部22a所進行之框架17的握持。When the workpiece 11 is unloaded from the cassette 8, the conveying mechanism 20 is moved to a temporary position along the Y-axis direction while holding the end of the frame 17 accommodated in the cassette 8 with the first gripping portion 22a. Set the mechanism 10 side. Thereby, the workpiece 11 is pulled out from the cassette 8 and placed on the pair of first support surfaces 12a. Thereafter, the gripping of the frame 17 by the first gripping portion 22a is released.
接著，在以第二握持部22b握持框架17的端部之狀態下，使搬送機構20沿著Y軸方向移動至框架固定機構14側。藉此，框架17被搬送至框架支撐部16與框架按壓部18之間，並被框架支撐部16支撐。Next, the transport mechanism 20 is moved to the frame fixing mechanism 14 side along the Y-axis direction in a state where the end portion of the frame 17 is gripped by the second gripping portion 22b. Thereby, the frame 17 is conveyed between the frame support part 16 and the frame pressing part 18, and is supported by the frame support part 16. As shown in FIG.
此外，在框架按壓部18的前端部設有切口部18a（參照圖3）。切口部18a被形成為搬送機構20能通過的大小。藉此，在將框架17搬送至框架固定機構14時，避免搬送機構20與框架按壓部18的接觸。In addition, a notch portion 18 a is provided at a front end portion of the frame pressing portion 18 (see FIG. 3 ). The cutout portion 18a is formed in a size such that the conveyance mechanism 20 can pass through. Thereby, when the frame 17 is transported to the frame fixing mechanism 14 , contact between the transport mechanism 20 and the frame pressing portion 18 is avoided.
之後，解除由第二握持部22b所進行之框架17的握持，使框架支撐部16往上方移動。藉此，框架17被框架支撐部16與框架按壓部18夾住並固定。After that, the grip of the frame 17 by the second gripping portion 22b is released, and the frame supporting portion 16 is moved upward. Thereby, the frame 17 is sandwiched and fixed by the frame support portion 16 and the frame pressing portion 18 .
在框架固定機構14連結有調節框架固定機構14的位置之移動機構30。移動機構30具備：X軸移動機構32，其使框架固定機構14沿著X軸方向移動；以及Y軸移動機構42，其使框架固定機構14沿著Y軸方向移動。藉由X軸移動機構32及Y軸移動機構42而調節框架固定機構14在水平方向之位置。A moving mechanism 30 for adjusting the position of the frame fixing mechanism 14 is connected to the frame fixing mechanism 14 . The moving mechanism 30 includes an X-axis moving mechanism 32 that moves the frame fixing mechanism 14 in the X-axis direction, and a Y-axis moving mechanism 42 that moves the frame fixing mechanism 14 in the Y-axis direction. The position of the frame fixing mechanism 14 in the horizontal direction is adjusted by the X-axis moving mechanism 32 and the Y-axis moving mechanism 42 .
X軸移動機構32具備沿著X軸方向配置於基台4上之一對X軸導軌34。在一對X軸導軌34之間設有與X軸導軌34大致平行地配置之X軸滾珠螺桿36。在X軸滾珠螺桿36的端部連結有使X軸滾珠螺桿36旋轉之X軸脈衝馬達38。The X-axis moving mechanism 32 includes a pair of X-axis guide rails 34 arranged on the base 4 along the X-axis direction. An X-axis ball screw 36 arranged substantially parallel to the X-axis guide rails 34 is provided between the pair of X-axis guide rails 34 . An X-axis pulse motor 38 for rotating the X-axis ball screw 36 is connected to an end portion of the X-axis ball screw 36 .
在一對X軸導軌34能滑動地裝設有移動板40。在移動板40的下表面側（背面側）設有螺帽部（未圖示），X軸滾珠螺桿36螺合於此螺帽部。若藉由X軸脈衝馬達38而使X軸滾珠螺桿36旋轉，則移動板40沿著X軸導軌34在X軸方向移動。A movable plate 40 is slidably attached to the pair of X-axis guide rails 34 . A nut portion (not shown) is provided on the lower surface side (back side) of the moving plate 40 , and the X-axis ball screw 36 is screwed to the nut portion. When the X-axis ball screw 36 is rotated by the X-axis pulse motor 38 , the moving plate 40 moves in the X-axis direction along the X-axis guide rail 34 .
Y軸移動機構42具備沿著Y軸方向配置於移動板40上之一對Y軸導軌44。在一對Y軸導軌44之間設有與Y軸導軌44大致平行地配置之Y軸滾珠螺桿46。在Y軸滾珠螺桿46的端部連結有使Y軸滾珠螺桿46旋轉之Y軸脈衝馬達48。The Y-axis moving mechanism 42 includes a pair of Y-axis guide rails 44 disposed on the moving plate 40 along the Y-axis direction. A Y-axis ball screw 46 arranged substantially parallel to the Y-axis guide rails 44 is provided between the pair of Y-axis guide rails 44 . A Y-axis pulse motor 48 that rotates the Y-axis ball screw 46 is connected to an end portion of the Y-axis ball screw 46 .
在一對Y軸導軌44能滑動地裝設有框架固定機構14。在框架固定機構14的下表面側設有螺帽部（未圖示），Y軸滾珠螺桿46螺合於此螺帽部。若藉由Y軸脈衝馬達48而使Y軸滾珠螺桿46旋轉，則框架固定機構14沿著一對Y軸導軌44在Y軸方向移動。The frame fixing mechanism 14 is slidably attached to the pair of Y-axis guide rails 44 . A nut portion (not shown) is provided on the lower surface side of the frame fixing mechanism 14 , and the Y-axis ball screw 46 is screwed to the nut portion. When the Y-axis ball screw 46 is rotated by the Y-axis pulse motor 48 , the frame fixing mechanism 14 moves in the Y-axis direction along the pair of Y-axis guide rails 44 .
在一對X軸導軌34之間設有形成於基台4的上表面側之矩形狀的開口4b。又，在開口4b的內側設有圓柱狀的上推機構50，所述圓柱狀的上推機構50將藉由分割被加工物11所形成之晶片21（參照圖1（B））從下往上推。在上推機構50連結有使上推機構50沿著Z軸方向移動（升降）之氣缸等升降機構（未圖示）。A rectangular opening 4 b formed on the upper surface side of the base 4 is provided between the pair of X-axis guide rails 34 . In addition, a cylindrical push-up mechanism 50 is provided inside the opening 4b, and the cylindrical push-up mechanism 50 moves the wafer 21 (refer to FIG. 1(B)) formed by dividing the workpiece 11 from bottom to bottom. Push up. A lift mechanism (not shown) such as an air cylinder that moves (lifts) the push-up mechanism 50 in the Z-axis direction is connected to the push-up mechanism 50 .
在以框架固定機構14固定框架17之狀態下，以移動機構30使框架固定機構14沿著X軸方向移動，藉此將被加工物11定位於開口4b的正上方。若在此狀態下使上推機構50上升，則會將配置於與上推機構50重疊之位置之晶片21進行上推。藉此，變得容易將特定的晶片21翻起（tip-up）。此外，上推機構50的尺寸係因應晶片21的尺寸而適當調節。With the frame 17 fixed by the frame fixing mechanism 14, the frame fixing mechanism 14 is moved in the X-axis direction by the moving mechanism 30, thereby positioning the workpiece 11 directly above the opening 4b. When the push-up mechanism 50 is raised in this state, the wafer 21 disposed at a position overlapping with the push-up mechanism 50 is pushed up. Thereby, it becomes easy to tip-up a specific wafer 21 . In addition, the size of the push-up mechanism 50 is properly adjusted according to the size of the wafer 21 .
在上推機構50的上方設有拍攝被加工物11之攝像單元60。攝像單元60被配置於能拍攝被配置於開口4b上之被加工物11的整體的位置。根據藉由以攝像單元60拍攝被加工物11所取得之影像，而以將預定的晶片21定位於上推機構50的正上方之方式，調整框架固定機構14的位置。藉此，進行晶片21與上推機構50的對位。Above the push-up mechanism 50 is provided an imaging unit 60 for photographing the workpiece 11 . The imaging unit 60 is arranged at a position capable of imaging the entire workpiece 11 arranged on the opening 4b. The position of the frame fixing mechanism 14 is adjusted so that a predetermined wafer 21 is positioned directly above the push-up mechanism 50 based on an image obtained by imaging the workpiece 11 with the imaging unit 60 . Thereby, alignment of the wafer 21 and the push-up mechanism 50 is performed.
已被上推機構50上推之晶片21係藉由圖2所示之拾取機構70而被拾取。拾取機構70具備筒夾76，所述筒夾76拾取已被上推機構50上推之晶片21。又，在拾取機構70連結有調節筒夾76的位置之筒夾移動機構80。The wafer 21 that has been pushed up by the push-up mechanism 50 is picked up by the pick-up mechanism 70 shown in FIG. 2 . The pick-up mechanism 70 has a collet 76 that picks up the wafer 21 that has been pushed up by the push-up mechanism 50 . Furthermore, a collet moving mechanism 80 for adjusting the position of the collet 76 is connected to the pickup mechanism 70 .
圖4係表示拾取機構70之立體圖。拾取機構70具備：移動塊72，其連結於筒夾移動機構80；以及柱狀的臂部74，其將筒夾76與筒夾移動機構80進行連接。臂部74被配置成從移動塊72朝向筒夾移動機構80的相反側並沿著X軸方向。又，臂部74具備：柱狀的第一支撐部74a，其透過移動塊72而連接於筒夾移動機構80；以及第二支撐部74b，其從第一支撐部74a的前端部朝向下方突出。FIG. 4 is a perspective view showing the pickup mechanism 70 . The pickup mechanism 70 includes a moving block 72 connected to the collet moving mechanism 80 , and a columnar arm 74 connecting the collet 76 to the collet moving mechanism 80 . The arm portion 74 is arranged from the moving block 72 toward the opposite side of the collet moving mechanism 80 and along the X-axis direction. In addition, the arm portion 74 includes: a columnar first support portion 74a connected to the collet moving mechanism 80 through the moving block 72; and a second support portion 74b protruding downward from the front end portion of the first support portion 74a. .
此外，第一支撐部74a與第二支撐部74b被構成為能互相連結及分離。例如，第一支撐部74a與第二支撐部74b係透過工具變換器等裝卸機構而互相裝卸自如地連接。Moreover, the 1st support part 74a and the 2nd support part 74b are comprised so that mutual connection and separation are possible. For example, the first support portion 74a and the second support portion 74b are detachably connected to each other through a detachable mechanism such as a tool changer.
在第二支撐部74b的下端側固定有保持晶片21（參照圖1（B））之筒夾76。筒夾76的下表面係與水平面（XY平面）大致平行的平坦面，並構成吸引晶片21之吸引面76a。例如，吸引面76a係透過形成於筒夾76的內部之吸引路徑（未圖示）而與噴射器等吸引源（未圖示）連接。在使晶片21與吸引面76a接觸之狀態下，使吸引源的吸引力（負壓）作用於吸引面76a，藉此晶片21被筒夾76吸引保持。A collet 76 holding the wafer 21 (see FIG. 1(B) ) is fixed to the lower end side of the second support portion 74 b. The lower surface of the collet 76 is a flat surface substantially parallel to the horizontal plane (XY plane), and constitutes a suction surface 76 a for suctioning the wafer 21 . For example, the suction surface 76 a is connected to a suction source (not shown) such as an injector through a suction path (not shown) formed inside the collet 76 . With the wafer 21 in contact with the suction surface 76 a , the suction force (negative pressure) of the suction source is applied to the suction surface 76 a, whereby the wafer 21 is sucked and held by the collet 76 .
如圖2所示，筒夾移動機構80具備：Y軸移動機構82，其使拾取機構70沿著Y軸方向移動；以及Z軸移動機構92，其使拾取機構70沿著Z軸方向移動。藉由Y軸移動機構82及Z軸移動機構92而調節筒夾76在Y軸方向及Z軸方向之位置。As shown in FIG. 2 , the collet moving mechanism 80 includes a Y-axis moving mechanism 82 that moves the pickup mechanism 70 in the Y-axis direction, and a Z-axis moving mechanism 92 that moves the pickup mechanism 70 in the Z-axis direction. The positions of the collet 76 in the Y-axis direction and the Z-axis direction are adjusted by the Y-axis moving mechanism 82 and the Z-axis moving mechanism 92 .
Y軸移動機構82具備沿著Y軸方向配置之一對Y軸導軌84。在一對Y軸導軌84之間設有與Y軸導軌84大致平行地配置之Y軸滾珠螺桿86。在Y軸滾珠螺桿86的端部連結有使Y軸滾珠螺桿86旋轉之Y軸脈衝馬達88。The Y-axis moving mechanism 82 includes a pair of Y-axis guide rails 84 arranged along the Y-axis direction. A Y-axis ball screw 86 arranged substantially parallel to the Y-axis guide rails 84 is provided between the pair of Y-axis guide rails 84 . A Y-axis pulse motor 88 that rotates the Y-axis ball screw 86 is connected to an end portion of the Y-axis ball screw 86 .
在一對Y軸導軌84能滑動地裝設有移動板90。在移動板90設有螺帽部（未圖示），Y軸滾珠螺桿86螺合於此螺帽部。若藉由Y軸脈衝馬達88而使Y軸滾珠螺桿86旋轉，則移動板90會沿著Y軸導軌84在Y軸方向移動。A movable plate 90 is slidably attached to the pair of Y-axis guide rails 84 . A nut portion (not shown) is provided on the moving plate 90 , and the Y-axis ball screw 86 is screwed to the nut portion. When the Y-axis ball screw 86 is rotated by the Y-axis pulse motor 88 , the moving plate 90 moves in the Y-axis direction along the Y-axis guide rail 84 .
Z軸移動機構92具備沿著Z軸方向配置於移動板90的正面之一對Z軸導軌94。在一對Z軸導軌94之間設有與Z軸導軌94大致平行地配置之Z軸滾珠螺桿96。在Z軸滾珠螺桿96的端部連結有使Z軸滾珠螺桿96旋轉之Z軸脈衝馬達98。The Z-axis moving mechanism 92 includes a pair of Z-axis guide rails 94 disposed on the front surface of the moving plate 90 along the Z-axis direction. A Z-axis ball screw 96 arranged substantially parallel to the Z-axis guide rails 94 is provided between the pair of Z-axis guide rails 94 . A Z-axis pulse motor 98 for rotating the Z-axis ball screw 96 is connected to an end of the Z-axis ball screw 96 .
在一對Z軸導軌94能滑動地裝設有拾取機構70的移動塊72。在移動塊72設有螺帽部（未圖示），Z軸滾珠螺桿96螺合於此螺帽部。若藉由Z軸脈衝馬達98而使Z軸滾珠螺桿96旋轉，則移動塊72會沿著Z軸導軌94在Z軸方向移動。The moving block 72 of the pickup mechanism 70 is slidably attached to the pair of Z-axis guide rails 94 . A nut portion (not shown) is provided on the moving block 72 , and the Z-axis ball screw 96 is screwed to the nut portion. When the Z-axis ball screw 96 is rotated by the Z-axis pulse motor 98 , the moving block 72 moves in the Z-axis direction along the Z-axis guide rail 94 .
已被上推機構50上推之晶片21（參照圖1（B））係藉由拾取機構70的筒夾76而被拾取。具體而言，首先，藉由移動機構30而使已被框架固定機構14固定之被加工物11移動，並配置於上推機構50上。又，根據藉由攝像單元60所取得之影像，以所拾取之預定晶片21與上推機構50重疊之方式，調整框架固定機構14的位置。再者，將筒夾76配置於與上推機構50的上表面重疊之位置。The wafer 21 (see FIG. 1(B) ) that has been pushed up by the push-up mechanism 50 is picked up by the collet 76 of the pick-up mechanism 70 . Specifically, first, the workpiece 11 fixed by the frame fixing mechanism 14 is moved by the moving mechanism 30 and placed on the push-up mechanism 50 . Also, the position of the frame fixing mechanism 14 is adjusted in such a manner that the picked-up scheduled wafer 21 overlaps the push-up mechanism 50 based on the image captured by the camera unit 60 . Furthermore, the collet 76 is arranged at a position overlapping the upper surface of the push-up mechanism 50 .
接著，使上推機構50往上方移動，隔著膠膜19將晶片21的下表面側朝向上方上推。又，使拾取機構70往下方移動，使筒夾76的吸引面76a（參照圖4）與已被上推機構50上推之晶片21的上表面側接觸。然後，在筒夾76的吸引面76a與晶片21已接觸之狀態下，使負壓作用於吸引面76a。藉此，晶片21被筒夾76吸引保持。若在此狀態下使拾取機構70往上方移動，則晶片21從膠膜19被剝離，並被筒夾76拾取。Next, the push-up mechanism 50 is moved upward, and the lower surface side of the wafer 21 is pushed upward through the adhesive film 19 . Further, the pickup mechanism 70 is moved downward so that the suction surface 76 a (see FIG. 4 ) of the collet 76 comes into contact with the upper surface side of the wafer 21 pushed up by the push-up mechanism 50 . Then, in a state where the suction surface 76a of the collet 76 is in contact with the wafer 21, negative pressure is applied to the suction surface 76a. Thereby, the wafer 21 is sucked and held by the collet 76 . When the pickup mechanism 70 is moved upward in this state, the wafer 21 is peeled off from the adhesive film 19 and picked up by the collet 76 .
此外，在膠膜19具有藉由照射紫外線而接著力降低之性質之情形，在上推機構50的上表面側亦可具備照射紫外線之光源。此情形，在使上推機構50與膠膜19接觸時，僅對膠膜19之中位於欲拾取之晶片21的下側之區域照射紫外線，而可局部地減弱膠膜19的接著力。藉此，變得容易拾取預定的晶片21，且藉由膠膜19的未照射紫外線之區域的接著力而維持其他晶片21的配置。In addition, in the case where the adhesive film 19 has a property in which the adhesive force is reduced by irradiating ultraviolet rays, a light source for irradiating ultraviolet rays may be provided on the upper surface side of the push-up mechanism 50 . In this case, when the push-up mechanism 50 is brought into contact with the adhesive film 19, only the area of the adhesive film 19 below the wafer 21 to be picked up is irradiated with ultraviolet light, thereby locally weakening the adhesive force of the adhesive film 19. Thereby, it becomes easy to pick up a predetermined chip 21 , and the arrangement of other chips 21 is maintained by the adhesive force of the region of the adhesive film 19 that is not irradiated with ultraviolet rays.
又，亦可在上推機構50或筒夾76設置用於測量施加於晶片21之負載的荷重元（load cell）。此情形，可藉由荷重元測量拾取晶片21時施加於晶片21之負載。而且，根據藉由荷重元所測量之負載，例如變得能確認晶片21在拾取時是否已損壞、或適當地變更拾取的條件（拾取晶片21時的筒夾76的高度等）。In addition, a load cell for measuring the load applied to the wafer 21 may be provided on the push-up mechanism 50 or the collet 76 . In this case, the load applied to the chip 21 when the chip 21 is picked up can be measured by a load cell. Furthermore, based on the load measured by the load cell, for example, it becomes possible to confirm whether or not the wafer 21 is damaged during pickup, and to appropriately change the pickup conditions (the height of the collet 76 when the wafer 21 is picked up, etc.).
晶片21已被拾取後的被加工物11亦可再次被容納於卡匣8。在此情形中，首先，使框架固定機構14移動至暫置機構10的後方，解除由框架固定機構14所進行之框架17的固定。接著，以搬送機構20的第二握持部22b握持框架17，將框架17搬送至一對第二支撐面12b上。之後，以搬送機構20的第一握持部22a握持框架17的端部，將被加工物11容納於卡匣8。The workpiece 11 after the wafer 21 has been picked up can also be accommodated in the cassette 8 again. In this case, first, the frame fixing mechanism 14 is moved to the rear of the temporary storage mechanism 10, and the fixing of the frame 17 by the frame fixing mechanism 14 is released. Next, the frame 17 is grasped by the second gripping portion 22b of the transport mechanism 20, and the frame 17 is transported onto the pair of second supporting surfaces 12b. Thereafter, the end portion of the frame 17 is held by the first holding portion 22 a of the transport mechanism 20 , and the workpiece 11 is accommodated in the cassette 8 .
另一方面，已被筒夾76拾取之晶片21係被筒夾移動機構80搬送至前方。在上推機構50的前方設有晶片觀察機構（晶片觀察單元）100，所述晶片觀察機構（晶片觀察單元）100觀察已被筒夾76拾取之晶片21。On the other hand, the wafer 21 picked up by the collet 76 is transported forward by the collet moving mechanism 80 . In front of the push-up mechanism 50 is provided a wafer observation mechanism (wafer observation unit) 100 that observes the wafer 21 that has been picked up by the collet 76 .
晶片觀察機構100具備：下表面觀察機構102，其觀察晶片21的下表面；以及側面觀察機構112，其觀察晶片21的側面。下表面觀察機構102與側面觀察機構112分別具備用於拍攝晶片21之攝像單元（攝影機）。The wafer observation mechanism 100 includes: a lower surface observation mechanism 102 for observing the lower surface of the wafer 21 ; and a side observation mechanism 112 for observing the side surface of the wafer 21 . The lower surface observation mechanism 102 and the side observation mechanism 112 each include an imaging unit (camera) for imaging the wafer 21 .
圖5（A）係表示下表面觀察機構102之立體圖。下表面觀察機構102具備：長方體狀的支撐基台104；以及柱狀的支撐構造106，其從支撐基台104的一端側的上表面朝向上方配置。又，在支撐基台104的另一端側的上表面設有用於拍攝晶片21的下表面之攝像單元（下表面攝像單元）108。FIG. 5(A) is a perspective view showing the lower surface observation mechanism 102 . The lower surface observation mechanism 102 includes: a rectangular parallelepiped support base 104; and a columnar support structure 106 arranged upward from the upper surface on one end side of the support base 104. Further, an imaging unit (lower surface imaging unit) 108 for imaging the lower surface of the wafer 21 is provided on the upper surface of the other end side of the supporting base 104 .
在基台4（參照圖2及圖3）與支撐基台104之間例如設有以防振橡膠等防振材料而成之防振構件110，攝像單元108被配置於防振構件110上。藉由防振構件110而抑制振動從基台4傳遞至攝像單元108。Between the base 4 (see FIG. 2 and FIG. 3 ) and the support base 104 is provided a vibration-proof member 110 made of a vibration-proof material such as vibration-proof rubber, and the imaging unit 108 is disposed on the vibration-proof member 110 . Transmission of vibration from the base 4 to the imaging unit 108 is suppressed by the anti-vibration member 110 .
此外，如前述般，臂部74的第一支撐部74a與第二支撐部74b被構成為能互相連結及分離。又，支撐構造106的上表面係與水平面（XY平面）大致平行的平坦面，並構成保持面106a，所述保持面106a保持已從第一支撐部74a分離之第二支撐部74b。In addition, as mentioned above, the 1st support part 74a and the 2nd support part 74b of the arm part 74 are comprised so that mutual connection and separation|separation are possible. Also, the upper surface of the supporting structure 106 is a flat surface substantially parallel to the horizontal plane (XY plane), and constitutes a holding surface 106a that holds the second supporting portion 74b separated from the first supporting portion 74a.
圖5（B）係表示保持臂部74的第二支撐部74b之下表面觀察機構102之立體圖。藉由保持面106a而支撐已從第一支撐部74a分離之第二支撐部74b的下表面74c。藉此，第二支撐部74b被固定於下表面觀察機構102。FIG. 5(B) is a perspective view showing the surface observation mechanism 102 under the second support portion 74 b holding the arm portion 74 . The lower surface 74c of the second support portion 74b separated from the first support portion 74a is supported by the holding surface 106a. Thereby, the 2nd support part 74b is fixed to the lower surface observation mechanism 102. As shown in FIG.
例如，保持面106a係透過形成於支撐構造106的內部之流路（未圖示）而與噴射器等吸引源（未圖示）連接，藉由吸引第二支撐部74b的下表面74c而保持第二支撐部74b。但是，保持第二支撐部74b之方法並無限制。例如，亦可藉由磁石而構成保持面106a，並藉由磁力而保持以磁性材料而成之第二支撐部74b的下表面74c。For example, the holding surface 106a is connected to a suction source (not shown) such as an injector through a flow path (not shown) formed inside the supporting structure 106, and is held by sucking the lower surface 74c of the second supporting portion 74b. The second support portion 74b. However, the method of holding the second support portion 74b is not limited. For example, the holding surface 106a may be formed by a magnet, and the lower surface 74c of the second support portion 74b made of a magnetic material may be held by magnetic force.
攝像單元108係在以保持面106a保持第二支撐部74b之狀態下，拍攝保持於筒夾76之晶片21的下表面。藉此，避免起因於筒夾移動機構80的驅動等之第一支撐部74a的振動傳遞至晶片21，而可提升由攝像單元108所進行之晶片21的拍攝的精確度。The imaging unit 108 images the lower surface of the wafer 21 held by the collet 76 in a state where the second support portion 74b is held by the holding surface 106a. Thereby, the vibration of the first support portion 74 a caused by the driving of the collet moving mechanism 80 and the like is prevented from being transmitted to the wafer 21 , and the accuracy of imaging of the wafer 21 by the imaging unit 108 can be improved.
圖6（A）係表示拍攝晶片21的下表面之攝像單元108之前視圖。已被筒夾76保持之晶片21係以與攝像單元108重疊的方式被定位，並藉由攝像單元108而拍攝晶片21的下表面側。其結果，取得顯示晶片21的下表面之影像（下表面影像）。藉此，在以後述的測量單元200測量晶片21的強度之前，可預先確認晶片21的下表面的狀態。FIG. 6(A) is a front view of the imaging unit 108 for photographing the lower surface of the wafer 21 . The wafer 21 held by the collet 76 is positioned so as to overlap with the imaging unit 108 , and the lower surface side of the wafer 21 is imaged by the imaging unit 108 . As a result, an image showing the lower surface of the wafer 21 (lower surface image) is obtained. Thereby, the state of the lower surface of the wafer 21 can be confirmed in advance before the measurement unit 200 described later measures the strength of the wafer 21 .
此外，攝像單元108被設置於與筒夾76的移動路徑重疊之位置。因此，藉由調節筒夾76的位置，而可將晶片21維持在被筒夾76保持之狀態下直接配置於攝像單元108的正上方。In addition, the imaging unit 108 is provided at a position overlapping with the moving path of the collet 76 . Therefore, by adjusting the position of the collet 76 , the wafer 21 can be placed directly above the imaging unit 108 while being held by the collet 76 .
又，如圖2及圖3所示，在下表面觀察機構102的前方設有側面觀察機構112。側面觀察機構112具備：柱狀的晶片支撐台114，其支撐晶片21；以及攝像單元（側面攝像單元）116，其拍攝晶片21的側面。In addition, as shown in FIGS. 2 and 3 , a side observation mechanism 112 is provided in front of the lower surface observation mechanism 102 . The side observation mechanism 112 includes: a columnar wafer support table 114 that supports the wafer 21 ; and an imaging unit (side imaging unit) 116 that captures the side surface of the wafer 21 .
晶片支撐台114的上表面係與水平面（XY平面）大致平行的平坦面，並構成支撐晶片21之支撐面114a。又，在晶片支撐台114連結有使晶片支撐台114繞著與Z軸方向大致平行的旋轉軸旋轉之馬達等旋轉驅動源（未圖示）。而且，攝像單元116被配置於能拍攝已配置於支撐面114a上之晶片21的側面的位置。The upper surface of the wafer support table 114 is a flat surface substantially parallel to the horizontal plane (XY plane), and constitutes a support surface 114 a for supporting the wafer 21 . Further, a rotary drive source (not shown) such as a motor for rotating the wafer support table 114 around a rotation axis substantially parallel to the Z-axis direction is connected to the wafer support table 114 . Furthermore, the imaging unit 116 is disposed at a position capable of imaging the side surface of the wafer 21 disposed on the supporting surface 114a.
圖6（B）係表示拍攝晶片21的側面之攝像單元116之前視圖。已被筒夾76保持之晶片21係配置於晶片支撐台114的支撐面114a上。然後，藉由攝像單元116而拍攝晶片21的側面。其結果，取得顯示晶片21的側面之影像（側面影像）。藉此，在以後述的測量單元200測量晶片21的強度之前，可預先確認晶片21的側面的狀態。FIG. 6(B) is a front view of the imaging unit 116 for photographing the side surface of the wafer 21 . The wafer 21 held by the collet 76 is placed on the support surface 114 a of the wafer support table 114 . Then, the side surface of the wafer 21 is photographed by the imaging unit 116 . As a result, an image (side image) showing the side surface of the wafer 21 is obtained. Thereby, the state of the side surface of the wafer 21 can be checked in advance before the measuring unit 200 described later measures the strength of the wafer 21 .
此外，晶片支撐台114被設置於與筒夾76的移動路徑重疊之位置。因此，藉由調節筒夾76的位置，而可將晶片21配置於晶片支撐台114上。In addition, the wafer support table 114 is provided at a position overlapping with the moving path of the collet 76 . Therefore, the wafer 21 can be placed on the wafer support table 114 by adjusting the position of the collet 76 .
又，一邊使晶片支撐台114旋轉，一邊以攝像單元116多次拍攝晶片21，藉此可取得兩個以上的側面影像。例如，藉由攝像單元116拍攝被晶片支撐台114支撐之晶片21的一側面後，使晶片支撐台114旋轉90°，藉由攝像單元116拍攝晶片21的另一側面。藉由重複此種程序，而拍攝晶片21的四個側面。Moreover, the wafer 21 is photographed multiple times by the imaging unit 116 while the wafer support table 114 is rotated, whereby two or more side images can be obtained. For example, after one side of the wafer 21 supported by the wafer support table 114 is photographed by the camera unit 116 , the wafer support table 114 is rotated by 90°, and the other side of the wafer 21 is photographed by the camera unit 116 . By repeating this procedure, four sides of the wafer 21 are photographed.
再者，在由攝像單元116所進行之晶片21的拍攝後，藉由控制晶片支撐台114的旋轉角度，而可調節從晶片支撐台114搬送至後述的測量單元200（參照圖2及圖3）之晶片21的朝向。藉此，可將晶片21以任意的朝向配置於測量單元200。Furthermore, after the wafer 21 is photographed by the imaging unit 116, by controlling the rotation angle of the wafer support table 114, the transfer from the wafer support table 114 to the measurement unit 200 described later can be adjusted (see FIGS. 2 and 3 ). ) orientation of the wafer 21. Thereby, the wafer 21 can be arranged in the measurement unit 200 with any orientation.
藉由上述的下表面觀察機構102及側面觀察機構112而觀察已被筒夾76拾取之晶片21的下表面及側面。此外，拍攝晶片21的側面之攝像單元116亦可設於能拍攝被筒夾76保持之狀態的晶片21（參照圖6（A））的側面的位置。在此情形中，可藉由攝像單元108、116而同時拍攝晶片21的下表面與側面。The lower surface and the side surface of the wafer 21 picked up by the collet 76 are observed by the above-mentioned lower surface observation mechanism 102 and side surface observation mechanism 112 . In addition, the imaging unit 116 for imaging the side surface of the wafer 21 may be provided at a position capable of imaging the side surface of the wafer 21 held by the collet 76 (see FIG. 6(A) ). In this case, the lower surface and the side surface of the wafer 21 can be photographed simultaneously by the camera units 108 , 116 .
攝像單元108、116的種類係因應所要求之下表面影像及側面影像的解析度、晶片21的材質等而適當選擇。例如，作為攝像單元108、116，可使用具備光學顯微鏡與CCD（Charged-Coupled Devices，電荷耦合元件）感測器、CMOS（Complementary Metal-Oxide-Semiconductor，互補金氧半導體）感測器等攝像元件之攝影機（可見光攝影機、紅外線攝影機等）。又，攝像單元108、116亦可藉由具備干涉物鏡之干涉計等而構成。藉此，可檢測形成於晶片21之細微凹凸。The types of the camera units 108 and 116 are properly selected according to the resolution of the surface image and side image required, the material of the chip 21 , and the like. For example, as the imaging units 108 and 116, imaging elements including an optical microscope, a CCD (Charged-Coupled Devices) sensor, a CMOS (Complementary Metal-Oxide-Semiconductor, complementary metal oxide semiconductor) sensor, etc. can be used. Cameras (visible light cameras, infrared cameras, etc.). In addition, the imaging units 108 and 116 may be constituted by an interferometer or the like provided with an interference objective lens. Thereby, fine unevenness formed on the wafer 21 can be detected.
圖7（A）係表示攝像單元108之局部剖面前視圖。攝像單元108具備：箱型的外殼120；攝像元件122，其設於外殼120的上部；以及干涉物鏡124，其設於外殼120的下部。在外殼120中容納有：白色LED等光照射部126；以及半反射鏡（half mirror）128，其配置於攝像元件122與干涉物鏡124之間。光照射部126被配置於能朝向半反射鏡128照射光之位置。FIG. 7(A) is a partial sectional front view showing the imaging unit 108. As shown in FIG. The imaging unit 108 includes: a box-shaped housing 120 ; an imaging element 122 provided on the upper portion of the housing 120 ; and an interference objective lens 124 provided on the lower portion of the housing 120 . The housing 120 accommodates: a light irradiation unit 126 such as a white LED; and a half mirror 128 disposed between the imaging element 122 and the interference objective lens 124 . The light irradiation unit 126 is arranged at a position where it can emit light toward the half mirror 128 .
在外殼120與干涉物鏡124之間設有壓電元件130，所述壓電元件130係因應從電源132供給之電壓而變化長度。藉由控制從電源132供給至壓電元件130之電壓，而調節干涉物鏡124在Z軸方向之位置（高度）。A piezoelectric element 130 is provided between the housing 120 and the interference objective lens 124 , and the piezoelectric element 130 changes in length in response to a voltage supplied from a power source 132 . The position (height) of the interference objective lens 124 in the Z-axis direction is adjusted by controlling the voltage supplied from the power source 132 to the piezoelectric element 130 .
圖7（B）係表示干涉物鏡124之示意圖。干涉物鏡124具備：物鏡134、設置於玻璃板136之參考鏡138、以及半反射鏡140。參考鏡138係相對於半反射鏡140而配置於與物鏡134的焦點位置對稱的位置。FIG. 7(B) is a schematic diagram showing the interference objective lens 124 . The interference objective lens 124 includes an objective lens 134 , a reference mirror 138 provided on a glass plate 136 , and a half mirror 140 . The reference mirror 138 is arranged at a position symmetrical to the focus position of the objective lens 134 with respect to the half mirror 140 .
從光照射部126射出之白色光會被半反射鏡128反射並射入干涉物鏡124。而且，穿透半反射鏡140而在晶片21的下表面反射之光與在半反射鏡140及參考鏡138反射之光會發生干涉。藉由攝像元件122而檢測由此干涉所得之光。The white light emitted from the light irradiation unit 126 is reflected by the half mirror 128 and enters the interference objective lens 124 . Furthermore, the light reflected by the lower surface of the wafer 21 passing through the half mirror 140 interferes with the light reflected by the half mirror 140 and the reference mirror 138 . The light obtained by the interference is detected by the imaging element 122 .
由干涉所得之光會產生干涉條紋，所述干涉條紋係對應干涉物鏡124與晶片21的下表面之間的距離。根據此干涉條紋的強度，檢測晶片21的下表面的細微的凹凸。The light obtained by the interference produces interference fringes corresponding to the distance between the interference objective lens 124 and the lower surface of the wafer 21 . Based on the intensity of the interference fringes, minute irregularities on the lower surface of the wafer 21 are detected.
此外，圖7（B）中係表示米勞（Mirau）型的干涉物鏡124，但干涉物鏡124的構造並無限制。例如，攝像單元108亦可具備邁克生（Michelson）型或林尼克（Linnik）型的干涉物鏡。又，圖7（A）及圖7（B）所示之攝像單元108的構成亦可應用於攝像單元116。In addition, FIG. 7(B) shows a Mirau-type interference objective lens 124 , but the structure of the interference objective lens 124 is not limited. For example, the imaging unit 108 may include a Michelson-type or Linnik-type interference objective lens. In addition, the configuration of the imaging unit 108 shown in FIG. 7(A) and FIG. 7(B) can also be applied to the imaging unit 116 .
如圖2及圖3所示，在側面觀察機構112的晶片支撐台114的上方設有使晶片21上下反轉之晶片反轉機構150。晶片反轉機構150被構成為在以前端部保持晶片21之狀態下能繞著與X軸方向大致平行的旋轉軸旋轉180°。As shown in FIGS. 2 and 3 , a wafer inversion mechanism 150 for inverting the wafer 21 up and down is provided above the wafer support table 114 of the side viewing mechanism 112 . The wafer inversion mechanism 150 is configured to be rotatable by 180° about a rotation axis substantially parallel to the X-axis direction while holding the wafer 21 at the front end.
圖8（A）係表示晶片反轉機構150之立體圖。晶片反轉機構150具備：板狀的基底部150a，其與YZ平面大致平行地配置；以及板狀的連接部150b，其從基底部150a的正面以沿著X軸方向的方式朝向晶片支撐台114及攝像單元116側配置。FIG. 8(A) is a perspective view showing the wafer inversion mechanism 150 . The wafer inversion mechanism 150 includes: a plate-shaped base portion 150a disposed approximately parallel to the YZ plane; and a plate-shaped connecting portion 150b directed from the front surface of the base portion 150a toward the wafer support table along the X-axis direction. 114 and the camera unit 116 side are arranged.
在連接部150b的前端部設有從連接部150b的上表面往上方突出之矩形狀的晶片保持部150c。晶片保持部150c係與晶片21的形狀對應而形成為矩形狀。又，晶片保持部150c的上表面係與水平面（XY平面）大致平行的平坦面，並構成保持晶片21之保持面150d。例如，保持面150d係透過形成於晶片保持部150c的內部之流路（未圖示）而與噴射器等吸引源（未圖示）連接。A rectangular wafer holding portion 150c protruding upward from the upper surface of the connection portion 150b is provided at the front end portion of the connection portion 150b. The wafer holding portion 150c is formed in a rectangular shape corresponding to the shape of the wafer 21 . Furthermore, the upper surface of the wafer holding portion 150c is a flat surface substantially parallel to the horizontal plane (XY plane), and constitutes a holding surface 150d for holding the wafer 21 . For example, the holding surface 150d is connected to a suction source (not shown) such as an ejector through a flow path (not shown) formed inside the wafer holding portion 150c.
基底部150a被構成為能繞著與X軸方向大致平行的旋轉軸旋轉180°。又，晶片保持部150c被配置成在基底部150a旋轉而晶片保持部150c被配置於連接部150b的下方時（參照圖8（B））會與晶片支撐台114的支撐面114a相向（重疊）。The base portion 150a is configured to be rotatable by 180° around a rotation axis substantially parallel to the X-axis direction. In addition, the wafer holding portion 150c is disposed so as to face (overlap) the supporting surface 114a of the wafer supporting table 114 when the base portion 150a is rotated and the wafer holding portion 150c is disposed below the connecting portion 150b (see FIG. 8(B)). .
在使晶片21的朝向上下反轉時，首先，使基底部150a往第一方向（從攝像單元116側觀看為逆時針方向）旋轉180°，而使晶片反轉機構150的上下反轉。藉此，晶片保持部150c係與被晶片支撐台114支撐之晶片21相向，並與晶片21的上表面接觸。然後，使吸引源的吸引力（負壓）作用於晶片保持部150c的保持面150d，藉由晶片保持部150c而吸引保持晶片21。圖8（B）係表示保持晶片21之晶片反轉機構150之立體圖。When inverting the orientation of the wafer 21 up and down, first, the base portion 150a is rotated 180° in the first direction (counterclockwise when viewed from the imaging unit 116 side) to invert the wafer inverting mechanism 150 up and down. Thereby, the wafer holding part 150c faces the wafer 21 supported by the wafer support table 114 and contacts the upper surface of the wafer 21 . Then, the suction force (negative pressure) of the suction source is applied to the holding surface 150d of the wafer holding portion 150c, and the wafer 21 is sucked and held by the wafer holding portion 150c. FIG. 8(B) is a perspective view showing the wafer inversion mechanism 150 holding the wafer 21 .
若在以晶片保持部150c保持晶片21之狀態下使基底部150a往第二方向（從攝像單元116側觀看為順時針方向）旋轉180°，則晶片反轉機構150上下反轉。藉此，成為晶片21的下表面側（相當於被加工物11的背面11b側）在上方露出之狀態，晶片21上下反轉。圖8（C）係表示已使晶片21反轉之晶片反轉機構150之立體圖。When the base portion 150a is rotated 180° in the second direction (clockwise when viewed from the imaging unit 116 side) with the wafer 21 held by the wafer holding portion 150c, the wafer inversion mechanism 150 is vertically inverted. Thereby, the lower surface side of the wafer 21 (corresponding to the back surface 11 b side of the workpiece 11 ) is exposed upward, and the wafer 21 is turned upside down. FIG. 8(C) is a perspective view showing the wafer inversion mechanism 150 which has inverted the wafer 21 .
若藉由筒夾76（參照圖4等）而保持在上方露出之晶片21的下表面側，則可在使晶片21的下表面側朝上之狀態下，將晶片21搬送至後述的測量單元200。如此，藉由晶片反轉機構150而變更被搬送至測量單元200之晶片21的上下方向的朝向。If the lower surface side of the wafer 21 exposed above is held by the collet 76 (see FIG. 4 etc.), the wafer 21 can be transported to the measurement unit described later with the lower surface side of the wafer 21 facing upward. 200. In this way, the orientation of the up-down direction of the wafer 21 conveyed to the measurement unit 200 is changed by the wafer inversion mechanism 150 .
如圖2及圖3所示，在晶片觀察機構100及晶片反轉機構150的前方設有測量晶片21的強度之測量單元（測量機構）200。測量單元200測量藉由分割被加工物11而得之晶片21的抗撓強度（彎曲強度）。As shown in FIGS. 2 and 3 , a measurement unit (measurement mechanism) 200 for measuring the strength of the wafer 21 is provided in front of the wafer observation mechanism 100 and the wafer inversion mechanism 150 . The measurement unit 200 measures the flexural strength (bending strength) of the wafer 21 obtained by dividing the workpiece 11 .
已被上推機構50上推之晶片21係藉由拾取機構70及筒夾移動機構80而被從上推機構50的上方搬送至測量單元200。此外，下表面觀察機構102及側面觀察機構112被配置於與筒夾76的移動路徑重疊之區域，所述筒夾76的移動路徑係從上推機構50的上方朝向測量單元200。因此，在將晶片21搬送至測量單元200之中途，可進行由晶片觀察機構100所進行之晶片21的觀察。The wafer 21 pushed up by the push-up mechanism 50 is transported from above the push-up mechanism 50 to the measurement unit 200 by the pick-up mechanism 70 and the collet moving mechanism 80 . In addition, the lower surface observation mechanism 102 and the side observation mechanism 112 are disposed in an area overlapping with the movement path of the collet 76 from above the push-up mechanism 50 toward the measurement unit 200 . Therefore, the observation of the wafer 21 by the wafer observation mechanism 100 can be performed while the wafer 21 is being transported to the measurement unit 200 .
圖9係表示測量單元200之立體圖。測量單元200具備被形成為長方體狀之箱型的下部容器（容納部）204。在下部容器204形成有：長方體狀的開口204b，其係在下部容器204的上表面204a側且朝向上方開口。在開口204b的內部設有：支撐單元206，其支撐欲藉由測量單元200測量強度之晶片21（參照圖1（B））。將已被筒夾76（參照圖2等）拾取之晶片21搬送至測量單元200，並配置於支撐單元206上。FIG. 9 is a perspective view showing the measurement unit 200 . The measurement unit 200 includes a box-shaped lower container (accommodation portion) 204 formed in a rectangular parallelepiped shape. The lower container 204 is formed with a rectangular parallelepiped opening 204b which opens upward on the side of the upper surface 204a of the lower container 204 . Inside the opening 204b is provided a supporting unit 206 for supporting the wafer 21 whose strength is to be measured by the measuring unit 200 (see FIG. 1(B)). The wafer 21 picked up by the collet 76 (see FIG. 2 etc.) is transferred to the measurement unit 200 and placed on the support unit 206 .
圖10係表示支撐單元206之立體圖。支撐單元206具備支撐晶片21之一對支撐台208。一對支撐台208分別被形成為長方體狀，且以在一對支撐台208之間設有間隙210的方式，以互相分開之狀態配置。又，支撐台208包含矩形狀的上表面208a，且被配置成上表面208a的長邊方向沿著Y軸方向。在一對支撐台208上配置欲測量強度之晶片21。FIG. 10 is a perspective view showing the support unit 206 . The supporting unit 206 includes a pair of supporting tables 208 for supporting the wafer 21 . The pair of support stands 208 are each formed in a rectangular parallelepiped shape, and are arranged in a state separated from each other so that a gap 210 is provided between the pair of support stands 208 . In addition, the support table 208 includes a rectangular upper surface 208a, and is arranged such that the longitudinal direction of the upper surface 208a is along the Y-axis direction. A wafer 21 to be measured for intensity is placed on a pair of supporting platforms 208 .
在一對支撐台208的上表面208a側分別形成有從上表面208a往上方突出之柱狀（棒狀）的支撐部208b。支撐部208b例如係以不鏽鋼等金屬而成，且以長度方向沿著Y軸方向的方式與間隙210相鄰配置。一對支撐部208b係以夾著間隙210而彼此分開之狀態配置，並支撐晶片21的下表面側。此外，在圖10中，表示上表面被形成為曲面狀之支撐部208b。Columnar (rod-shaped) support portions 208 b protruding upward from the upper surfaces 208 a are respectively formed on the upper surface 208 a side of the pair of support bases 208 . The supporting portion 208b is made of metal such as stainless steel, and is disposed adjacent to the gap 210 such that the longitudinal direction is along the Y-axis direction. The pair of support portions 208b are arranged in a state separated from each other with the gap 210 therebetween, and support the lower surface side of the wafer 21 . In addition, in FIG. 10, the support part 208b whose upper surface is formed in the shape of a curved surface is shown.
又，在一對支撐台208的上表面208a側分別設有以比支撐部208b更柔軟的材質（橡膠海綿等）而成之板狀的接觸構件212。一對接觸構件212在俯視下被形成為矩形狀，並被設於一對支撐部208b的兩側。亦即，接觸構件212分別被配置於與支撐部208b的間隙210為相反側，一對支撐部208b被配置於一對接觸構件212之間。Further, plate-shaped contact members 212 made of a material (rubber sponge, etc.) softer than the support portion 208b are respectively provided on the upper surface 208a side of the pair of support bases 208 . The pair of contact members 212 are formed in a rectangular shape in plan view, and are provided on both sides of the pair of support portions 208b. That is, the contact members 212 are respectively arranged on the opposite side to the gap 210 of the support portion 208 b, and the pair of support portions 208 b are arranged between the pair of contact members 212 .
接觸構件212的上表面構成與晶片21接觸並支撐晶片21之矩形狀的接觸面212a。此外，接觸構件212被設置成接觸面212a配置於比支撐部208b的上端更上方（例如，從支撐部208b的上端起1mm左右上方）。因此，若將晶片21配置於一對支撐台208上，則晶片21的下表面側並不與支撐部208b接觸，而與接觸構件212的接觸面212a接觸。此外，針對支撐部208b及接觸構件212與晶片21的接觸的詳細內容將於後述（參照圖12～圖14）。The upper surface of the contact member 212 constitutes a rectangular contact surface 212 a that contacts the wafer 21 and supports the wafer 21 . In addition, the contact member 212 is provided so that the contact surface 212a is disposed above the upper end of the support portion 208b (for example, about 1 mm above the upper end of the support portion 208b). Therefore, when the wafer 21 is placed on the pair of support tables 208 , the lower surface side of the wafer 21 does not contact the support portion 208 b but contacts the contact surface 212 a of the contact member 212 . In addition, the details of the contact between the support portion 208 b and the contact member 212 and the wafer 21 will be described later (see FIGS. 12 to 14 ).
在一對支撐台208的背面側（檢查裝置2的前面側）設有使一對支撐台208分別沿著X軸方向移動之支撐台移動機構214。支撐台移動機構214具備長方體狀的支撐構造216。在支撐構造216的正面側（檢查裝置2的後面側），沿著X軸方向以預定的間隔固定有一對導軌218。On the back side of the pair of support tables 208 (the front side of the inspection device 2 ), a support table moving mechanism 214 for moving the pair of support tables 208 in the X-axis direction is provided. The support table moving mechanism 214 includes a rectangular parallelepiped support structure 216 . On the front side of the support structure 216 (the rear side of the inspection device 2 ), a pair of guide rails 218 are fixed at predetermined intervals along the X-axis direction.
在一對導軌218之間設有與導軌218大致平行地配置之一對滾珠螺桿220。在一對滾珠螺桿220的端部分別連結有使滾珠螺桿220旋轉之脈衝馬達222。A pair of ball screws 220 arranged substantially parallel to the guide rails 218 is provided between the pair of guide rails 218 . Pulse motors 222 for rotating the ball screws 220 are respectively connected to ends of the pair of ball screws 220 .
再者，支撐台移動機構214具備分別固定於一對支撐台208的背面側之一對移動板224。移動板224分別能滑動地裝設於一對導軌218。又，在一對移動板224的背面側分別設有螺帽部（未圖示）。在設於一移動板224之螺帽部螺合有一滾珠螺桿220，且在設於另一移動板224之螺帽部螺合有另一滾珠螺桿220。Furthermore, the support base moving mechanism 214 includes a pair of moving plates 224 respectively fixed to the rear surfaces of the pair of support bases 208 . The moving plates 224 are respectively slidably mounted on the pair of guide rails 218 . In addition, nut portions (not shown) are respectively provided on the back side of the pair of moving plates 224 . A ball screw 220 is screwed on a nut portion of one moving plate 224 , and another ball screw 220 is screwed on a nut portion of another moving plate 224 .
若藉由脈衝馬達222而使滾珠螺桿220旋轉，則螺合於滾珠螺桿220之移動板224沿著導軌218在X軸方向移動。藉此，調節一對支撐台208各自在X軸方向之位置與間隙210的寬度。When the ball screw 220 is rotated by the pulse motor 222 , the moving plate 224 screwed to the ball screw 220 moves in the X-axis direction along the guide rail 218 . Thereby, the respective positions of the pair of supporting platforms 208 in the X-axis direction and the width of the gap 210 are adjusted.
支撐單元206及支撐台移動機構214容納於圖9所示之下部容器204的開口204b。此外，下部容器204及開口204b的形狀、尺寸係因應支撐單元206及支撐台移動機構214的形狀、尺寸而適當設定。The supporting unit 206 and the supporting table moving mechanism 214 are accommodated in the opening 204b of the lower container 204 shown in FIG. 9 . In addition, the shapes and sizes of the lower container 204 and the opening 204b are appropriately set according to the shapes and sizes of the supporting unit 206 and the supporting platform moving mechanism 214 .
在下部容器204的上方設有推壓單元226。推壓單元226推壓被支撐單元206支撐之晶片21，且在推壓晶片21時測量施加於推壓單元226之負載。A pressing unit 226 is provided above the lower container 204 . The pushing unit 226 pushes the wafer 21 supported by the support unit 206 , and measures the load applied to the pushing unit 226 while pushing the wafer 21 .
圖11係表示推壓單元226之立體圖。推壓單元226具備連結於移動機構240之移動基台228。在移動基台228的下表面側連接有從移動基台228的下表面朝向下方配置之圓柱狀的第一支撐構件230。在第一支撐構件230的下端側固定有藉由荷重元等所構成之負載量測器232。FIG. 11 is a perspective view showing the pressing unit 226 . The pressing unit 226 has a moving base 228 connected to the moving mechanism 240 . A cylindrical first support member 230 arranged downward from the lower surface of the movable base 228 is connected to the lower surface side of the movable base 228 . On the lower end side of the first supporting member 230, a load measuring device 232 constituted by a load cell or the like is fixed.
在負載量測器232的下側，透過圓柱狀的第二支撐構件234而連接有夾持構件236。夾持構件236從正面觀看被形成為大致門型的形狀，且具備彼此相向之一對夾持面236a。在一對夾持面236a之間固定有壓頭238，所述壓頭238推壓被支撐單元206支撐之晶片21。On the lower side of the load measuring device 232 , a clamping member 236 is connected through a cylindrical second support member 234 . The clamping member 236 is formed in a substantially door-shaped shape when viewed from the front, and has a pair of clamping surfaces 236a facing each other. An indenter 238 is fixed between the pair of clamping surfaces 236 a, and the indenter 238 pushes the wafer 21 supported by the supporting unit 206 .
壓頭238的前端部（下端部）被形成為寬度朝向下方變窄之尖錐形狀。亦即，壓頭238的前端部的兩側面相對於鉛直方向呈傾斜。又，壓頭238的前端（下端）被形成為圓角的形狀（R形）（參照圖12等）。但是，壓頭238的形狀並不受限於上述。The front end portion (lower end portion) of the indenter 238 is formed in a tapered shape whose width becomes narrower downward. That is, both side surfaces of the tip portion of the indenter 238 are inclined with respect to the vertical direction. In addition, the front end (lower end) of the indenter 238 is formed in a rounded shape (R shape) (see FIG. 12 and the like). However, the shape of the indenter 238 is not limited to the above.
壓頭238係以其下端沿著Y軸方向的方式被夾持構件236支撐。亦即，壓頭238的下端與支撐單元206所具備之一對支撐部208b（參照圖10）被配置為大致互相平行。The indenter 238 is supported by the clamping member 236 with its lower end along the Y-axis direction. That is, the lower end of the indenter 238 and a pair of support portions 208 b (see FIG. 10 ) included in the support unit 206 are arranged substantially parallel to each other.
又，在推壓單元226的背面側（檢查裝置2的前表面側）設有使推壓單元226沿著Z軸方向移動之移動機構240。移動機構240具備長方體狀的支撐構造242。在支撐構造242的正面側（檢查裝置2的後表面側），沿著Z軸方向以預定的間隔固定有一對導軌244。Furthermore, a movement mechanism 240 for moving the pressing unit 226 in the Z-axis direction is provided on the back side of the pressing unit 226 (the front side of the inspection device 2 ). The moving mechanism 240 includes a rectangular parallelepiped support structure 242 . On the front side of the support structure 242 (the rear surface side of the inspection device 2 ), a pair of guide rails 244 are fixed at predetermined intervals along the Z-axis direction.
在一對導軌244之間設有與導軌244大致平行地配置之滾珠螺桿246。在滾珠螺桿246的端部連結有使滾珠螺桿246旋轉之脈衝馬達248。A ball screw 246 arranged substantially parallel to the guide rails 244 is provided between the pair of guide rails 244 . A pulse motor 248 for rotating the ball screw 246 is connected to an end of the ball screw 246 .
移動基台228的背面側能滑動地裝設於一對導軌244。又，在移動基台228的背面側設有螺帽部（未圖示），滾珠螺桿246螺合於此螺帽部。若藉由脈衝馬達248而使滾珠螺桿246旋轉，則移動基台228沿著導軌244在Z軸方向移動。藉此，控制推壓單元226在Z軸方向之位置。藉由移動機構240而使推壓單元226沿著Z軸方向移動，藉此，壓頭238相對於支撐單元206而相對地接近及分開。The rear side of the mobile base 228 is slidably mounted on a pair of guide rails 244 . Moreover, a nut part (not shown) is provided in the back side of the movable base 228, and the ball screw 246 is screwed to this nut part. When the ball screw 246 is rotated by the pulse motor 248 , the moving base 228 moves in the Z-axis direction along the guide rail 244 . Thereby, the position of the pushing unit 226 in the Z-axis direction is controlled. The pushing unit 226 is moved along the Z-axis direction by the moving mechanism 240 , whereby the pressing head 238 relatively approaches and separates relative to the supporting unit 206 .
如圖9所示，在移動基台228的兩側面固定有被形成為板狀之一對連接構件250。連接構件250係從移動基台228的側面朝向下方設置，連接構件250的下端被配置於比夾持構件236的下端更下方。As shown in FIG. 9 , a pair of connecting members 250 formed in a plate shape are fixed to both side surfaces of the mobile base 228 . The connecting member 250 is provided downward from the side surface of the mobile base 228 , and the lower end of the connecting member 250 is arranged below the lower end of the holding member 236 .
在一對連接構件250的下端部形成有朝向壓頭238側突出之一對上部容器支撐部250a。在一對上部容器支撐部250a之間固定有覆蓋壓頭238的前端部之長方體狀的上部容器（蓋）252。上部容器252被配置於下部容器204的上方，上部容器252的兩側面被一對上部容器支撐部250a支撐。A pair of upper container support portions 250 a protruding toward the press head 238 side are formed at lower end portions of the pair of connecting members 250 . A cuboid-shaped upper container (cap) 252 that covers the front end portion of the indenter 238 is fixed between the pair of upper container support portions 250 a. The upper container 252 is disposed above the lower container 204 , and both side surfaces of the upper container 252 are supported by a pair of upper container support parts 250 a.
上部容器252例如係以透明的材質（玻璃、塑膠等）而成之箱型的構件。在上部容器252形成有在上部容器252的下表面252a側且朝向下方開口之長方體狀的開口252b（參照圖12等）。又，在上部容器252的上表面252c側形成有壓頭插入孔252d，壓頭238的前端部插入壓頭插入孔252d。因此，壓頭238的前端部被上部容器252覆蓋。此外，在圖9中，以虛線表示被上部容器252覆蓋之壓頭238的一部分。The upper container 252 is, for example, a box-shaped member made of a transparent material (glass, plastic, etc.). A cuboid-shaped opening 252b that opens downward on the lower surface 252a side of the upper container 252 is formed in the upper container 252 (see FIG. 12 and the like). In addition, an indenter insertion hole 252d is formed on the upper surface 252c side of the upper container 252, and the tip of the indenter 238 is inserted into the indenter insertion hole 252d. Therefore, the front end portion of the press head 238 is covered by the upper container 252 . In addition, in FIG. 9, a part of the indenter 238 covered by the upper container 252 is shown by the dotted line.
上部容器252被形成為能插入下部容器204的開口204b之大小，且在俯視下配置於下部容器204的開口204b的內側。又，上部容器252的開口252b（參照圖12等）被形成為能容納支撐單元206之大小。因此，若藉由移動機構240而使推壓單元226移動至下方，則上部容器252被插入下部容器204的開口204b，且支撐單元206的上側被上部容器252覆蓋。The upper container 252 is formed in a size capable of being inserted into the opening 204b of the lower container 204, and is arranged inside the opening 204b of the lower container 204 in plan view. In addition, the opening 252b (see FIG. 12 etc.) of the upper container 252 is formed in a size capable of accommodating the support unit 206 . Therefore, when the pushing unit 226 is moved downward by the moving mechanism 240 , the upper container 252 is inserted into the opening 204 b of the lower container 204 , and the upper side of the supporting unit 206 is covered by the upper container 252 .
在上部容器252的側壁252e設有噴嘴插入孔252f。在噴嘴插入孔252f連接氣體供給單元254，所述氣體供給單元254對壓頭238的前端部噴吹空氣等氣體。The side wall 252e of the upper container 252 is provided with a nozzle insertion hole 252f. A gas supply unit 254 that blows gas such as air to the tip of the head 238 is connected to the nozzle insertion hole 252 f.
氣體供給單元254具備朝向壓頭238噴射氣體之噴嘴256。噴嘴256的一端側係透過噴嘴插入孔252f而插入上部容器252的內部，噴嘴256的另一端側係透過閥258而連接於氣體供給源260。又，噴嘴256的一端側的前端256a（參照圖12等）朝向壓頭238的前端部的側面開口。The gas supply unit 254 includes a nozzle 256 that injects gas toward the pressure head 238 . One end of the nozzle 256 is inserted into the upper container 252 through the nozzle insertion hole 252 f , and the other end of the nozzle 256 is connected to the gas supply source 260 through the valve 258 . Also, a front end 256 a (see FIG. 12 etc.) on one end side of the nozzle 256 opens toward the side surface of the front end portion of the ram 238 .
將從氣體供給源260透過閥258而供給至噴嘴256之空氣等氣體噴吹至壓頭238的前端部的側面。藉此，將附著於壓頭238的前端部、支撐部208b、接觸面212a（參照圖10）等之異物去除。此外，針對氣體供給單元254的動作的詳細內容，將於後述。Gas such as air supplied to the nozzle 256 from the gas supply source 260 through the valve 258 is blown onto the side surface of the front end portion of the head 238 . Thereby, the foreign matter adhering to the front end part of the indenter 238, the support part 208b, the contact surface 212a (refer FIG. 10), etc. is removed. In addition, details of the operation of the gas supply unit 254 will be described later.
在下部容器204的底部形成有從下部容器204的開口204b的底部貫通下部容器204的下表面（底面）204c之排出口204d。在排出口204d連接有排出單元262，所述排出單元262將存在於下部容器204的內部之晶片21的碎片等異物排出。At the bottom of the lower container 204 , a discharge port 204 d penetrating the lower surface (bottom surface) 204 c of the lower container 204 from the bottom of the opening 204 b of the lower container 204 is formed. A discharge unit 262 for discharging foreign matter such as fragments of the wafer 21 present in the lower container 204 is connected to the discharge port 204d.
排出單元262具備構成用於排出異物的路徑之排出路徑264。例如，排出路徑264係藉由管線、管材等所構成。排出路徑264的一端側連接於排出口204d。又，排出路徑264的另一端側係透過閥266而與噴射器等吸引源268連接。The discharge unit 262 includes a discharge path 264 constituting a path for discharging foreign matter. For example, the discharge path 264 is formed by pipelines, pipes, and the like. One end side of the discharge path 264 is connected to the discharge port 204d. In addition, the other end side of the discharge path 264 is connected to a suction source 268 such as an ejector through a valve 266 .
又，在排出路徑264中設有回收異物之回收部270。回收部270係藉由過濾器等所構成，並捕捉通過排出路徑264之異物。若將閥266打開，則散落於下部容器204的開口204b的內部之晶片21的碎片等會從排出口204d被吸引，並被回收部270回收。此外，針對排出單元262的動作的詳細內容，將於後述。In addition, a collection unit 270 for collecting foreign matter is provided in the discharge path 264 . The recovery unit 270 is constituted by a filter or the like, and captures foreign matter passing through the discharge path 264 . When the valve 266 is opened, fragments of the wafer 21 scattered inside the opening 204 b of the lower container 204 are sucked from the discharge port 204 d and recovered by the recovery unit 270 . In addition, the details of the operation of the discharge unit 262 will be described later.
又，在下部容器204的前後方，攝像單元272與朝向攝像單元272照射光之光源274係以夾住支撐單元206的上部且彼此相向之方式設置。攝像單元272及光源274的位置被調整為能藉由攝像單元272而拍攝被支撐單元206支撐之晶片21、壓頭238的前端部等。In addition, at the front and back of the lower container 204, the imaging unit 272 and the light source 274 that irradiates light toward the imaging unit 272 are provided so as to sandwich the upper portion of the support unit 206 and face each other. The positions of the imaging unit 272 and the light source 274 are adjusted so that the wafer 21 supported by the supporting unit 206 , the front end of the indenter 238 , and the like can be photographed by the imaging unit 272 .
一邊從光源274照射光，一邊以攝像單元272拍攝壓頭238的前端部，藉此可觀察晶片21被壓頭238推壓之態樣、壓頭238的前端部的狀態（有無附著異物、有無崩缺等）。但是，在充分明亮的環境下由攝像單元272進行拍攝之情形中，亦可省略光源274。While irradiating light from the light source 274, the front end of the indenter 238 is photographed by the imaging unit 272, whereby the state in which the wafer 21 is pushed by the indenter 238 and the state of the front end of the indenter 238 (whether foreign matter is attached, whether there is collapse, etc.). However, the light source 274 can also be omitted in the case of imaging by the imaging unit 272 in a sufficiently bright environment.
藉由使用上述的測量單元200，可進行晶片21的三點彎曲試驗。藉由三點彎曲試驗而測量晶片21的抗撓強度（彎曲強度）。以下，針對測量晶片21的強度時的測量單元200的動作例進行說明。By using the measurement unit 200 described above, a three-point bending test of the wafer 21 can be performed. The flexural strength (bending strength) of the wafer 21 was measured by a three-point bending test. Hereinafter, an example of the operation of the measurement unit 200 when measuring the strength of the wafer 21 will be described.
圖12係表示晶片21已被支撐單元206支撐之狀態的測量單元200之剖面圖。如圖12所示，壓頭238被配置成在一對支撐部208b的上方與一對支撐部208b之間的區域（間隙210）重疊。又，壓頭238被配置成其前端（下端）沿著支撐部208b的長度方向（Y軸方向）。FIG. 12 is a cross-sectional view of the measurement unit 200 showing a state in which the wafer 21 is supported by the support unit 206 . As shown in FIG. 12, the indenter 238 is arrange|positioned so that it may overlap with the area (gap 210) between a pair of support part 208b above a pair of support part 208b. In addition, the indenter 238 is arranged such that its front end (lower end) is along the longitudinal direction (Y-axis direction) of the support portion 208b.
在測量晶片21的強度時，首先，藉由支撐台移動機構214（參照圖10）而調整一對支撐台208在X軸方向之位置。一對支撐台208的位置被調整成因應晶片21的尺寸等而形成適當寬度的間隙210。之後，將晶片21配置於一對支撐台208上。具體而言，在將被筒夾76（參照圖2等）保持之晶片21定位於一對支撐台208上之狀態下，解除由筒夾76所進行之晶片21的吸引。此時，晶片21被配置成兩端部被一對支撐台208支撐且中央部與間隙210重疊。When measuring the strength of the wafer 21 , first, the positions of the pair of support tables 208 in the X-axis direction are adjusted by the support table moving mechanism 214 (see FIG. 10 ). The positions of the pair of supporting tables 208 are adjusted to form a gap 210 having an appropriate width in accordance with the size of the wafer 21 and the like. Afterwards, the wafer 21 is placed on a pair of supporting tables 208 . Specifically, with the wafer 21 held by the collet 76 (see FIG. 2 and the like) positioned on the pair of support tables 208, the suction of the wafer 21 by the collet 76 is released. At this time, the wafer 21 is arranged such that both end portions are supported by the pair of support tables 208 and the central portion overlaps the gap 210 .
此外，在將晶片21配置於一對支撐台208上時，若假設晶片21的下表面側與支撐部208b接觸，則有時會因配置時的衝擊而損傷晶片21的下表面側。此情形，晶片21的強度會發生變化，有時變得難以利用同一條件測量多個晶片21的強度。Also, if the lower surface side of the wafer 21 contacts the support portion 208b when placing the wafer 21 on the pair of support tables 208, the lower surface side of the wafer 21 may be damaged by the impact during the arrangement. In this case, the intensity of the wafer 21 varies, and it may become difficult to measure the intensity of a plurality of wafers 21 under the same conditions.
然而，在支撐台208的上表面208a側設有柔軟的接觸構件212。又，接觸構件212的接觸面212a位於比支撐部208b的上端更上方。因此，若將晶片21配置於一對支撐台208上，則晶片21並不與支撐部208b接觸，而與接觸構件212的接觸面212a接觸，並被接觸面212a支撐。藉此，可防止在配置晶片21時晶片21的下表面側與支撐部208b接觸而損傷。However, a soft contact member 212 is provided on the upper surface 208 a side of the support table 208 . Moreover, the contact surface 212a of the contact member 212 is located above the upper end of the support part 208b. Therefore, when the wafer 21 is placed on the pair of support tables 208, the wafer 21 does not contact the support portion 208b but contacts the contact surface 212a of the contact member 212 and is supported by the contact surface 212a. This prevents the lower surface side of the wafer 21 from being damaged by contacting the supporting portion 208b when the wafer 21 is arranged.
接著，藉由移動機構240（參照圖11）而使推壓單元226下降。若使推壓單元226下降，則壓頭238的前端與晶片21的上表面側接觸，晶片21被壓頭238推壓。又，藉由負載量測器232（參照圖11）而測量因推壓晶片21而施加於壓頭238之負載（Z軸方向的力）。Next, the pressing unit 226 is lowered by the moving mechanism 240 (see FIG. 11 ). When the pressing unit 226 is lowered, the tip of the indenter 238 comes into contact with the upper surface side of the wafer 21 , and the wafer 21 is pushed by the indenter 238 . Also, the load (force in the Z-axis direction) applied to the indenter 238 by pushing the wafer 21 is measured by the load measuring device 232 (see FIG. 11 ).
若使推壓單元226進一步下降，則晶片21被壓頭238進一步地推壓，而會在晶片21產生撓曲，且支撐晶片21之接觸構件212會變形。其結果，晶片21的下表面側會與支撐台208的支撐部208b接觸。此外，依據接觸構件212的柔軟性的不同，亦有僅發生接觸構件212的變形而不發生晶片21的撓曲之情形。If the pushing unit 226 is lowered further, the wafer 21 is further pushed by the pressure head 238, and the wafer 21 is deflected, and the contact member 212 supporting the wafer 21 is deformed. As a result, the lower surface side of the wafer 21 comes into contact with the support portion 208 b of the support table 208 . In addition, depending on the flexibility of the contact member 212, there may be cases where only the deformation of the contact member 212 occurs without bending of the wafer 21.
圖13係表示晶片21已與支撐台208的支撐部208b接觸之狀態的測量單元200之剖面圖。若晶片21與一對支撐部208b接觸，則晶片21被一對支撐部208b支撐，而施加於推壓晶片21之壓頭238之負載會增大。又，若使推壓單元226進一步下降，則晶片21會在被一對支撐部208b支撐之狀態下被壓頭238進一步地推壓。而且，若從壓頭238施加於晶片21之推壓力超過預定的值，則晶片21會被破壞。FIG. 13 is a cross-sectional view of the measurement unit 200 showing a state where the wafer 21 is in contact with the support portion 208b of the support table 208. As shown in FIG. If the wafer 21 is in contact with the pair of support portions 208b, the wafer 21 is supported by the pair of support portions 208b, and the load applied to the indenter 238 pushing the wafer 21 increases. Furthermore, when the pressing unit 226 is lowered further, the wafer 21 is further pushed by the pressing head 238 while being supported by the pair of support portions 208b. Furthermore, if the pressing force applied to the wafer 21 from the indenter 238 exceeds a predetermined value, the wafer 21 may be broken.
圖14係表示晶片21已被破壞之狀態的測量單元200之剖面圖。若晶片21被破壞，則藉由負載量測器232所測量之負載會從最大值減少至零。因此，從藉由負載量測器232所測量之負載值的變化，可檢測晶片21已被破壞之時間點。又，藉由負載量測器232所測量到之負載的最大值係對應於晶片21的強度。FIG. 14 is a cross-sectional view of the measurement unit 200 showing a state in which the wafer 21 has been broken. If the chip 21 is damaged, the load measured by the load measuring device 232 will decrease from the maximum value to zero. Therefore, from the change of the load value measured by the load measuring device 232, the time point at which the wafer 21 has been damaged can be detected. Also, the maximum value of the load measured by the load measuring device 232 corresponds to the strength of the wafer 21 .
具體而言，根據施加於壓頭238之負載的最大值、一對支撐部208b的上端間的距離、晶片21的尺寸，而計算晶片21的彎曲應力值。若將施加於推壓晶片21之壓頭238之負載的最大值設為W[N]、將一對支撐部208b的上端間的距離設為L[mm]、將晶片21的寬度（在與連結一對支撐部208b之直線垂直的方向（Y軸方向）之晶片21的長度）設為b[mm]、將晶片21的厚度設為h[mm]，則晶片21的彎曲應力值σ係以σ=3WL／2bh 2表示。 Specifically, the bending stress value of the wafer 21 is calculated from the maximum value of the load applied to the indenter 238 , the distance between the upper ends of the pair of support portions 208 b , and the size of the wafer 21 . If the maximum value of the load applied to the indenter 238 that pushes the wafer 21 is W [N], the distance between the upper ends of the pair of support portions 208b is L [mm], and the width of the wafer 21 (in the same range as The length of the wafer 21 in the direction perpendicular to the straight line connecting the pair of supporting parts 208b (Y-axis direction) is b [mm], and the thickness of the wafer 21 is h [mm], then the bending stress value σ of the wafer 21 is It is represented by σ=3WL/2bh 2 .
若晶片21被破壞，則晶片21的碎片23會飛散。但是，在晶片21被壓頭238推壓時，上部容器252係以覆蓋晶片21及支撐單元206的上側的方式被定位。藉此，可防止晶片21的碎片23飛散至測量單元200的外部。When the wafer 21 is broken, fragments 23 of the wafer 21 are scattered. However, when the wafer 21 is pushed by the indenter 238 , the upper container 252 is positioned so as to cover the upper side of the wafer 21 and the supporting unit 206 . Thereby, the debris 23 of the wafer 21 can be prevented from flying to the outside of the measurement unit 200 .
此外，若藉由壓頭238而推壓晶片21，則有時異物（晶片21的碎片23等）會附著於壓頭238。此異物有時會對試驗的精確度造成影響，因此較佳為將其去除。於是，在進行晶片21的試驗後，較佳為藉由氣體供給單元254而對壓頭238噴吹氣體，去除附著於壓頭238之異物。Also, when the wafer 21 is pushed by the indenter 238 , foreign matter (fragments 23 of the wafer 21 , etc.) may adhere to the indenter 238 . Since this foreign matter may affect the accuracy of the test, it is preferable to remove it. Therefore, after the test of the wafer 21 is performed, it is preferable to blow gas to the indenter 238 through the gas supply unit 254 to remove foreign matter adhering to the indenter 238 .
具體而言，打開氣體供給單元254的閥258，將從氣體供給源260所供給之空氣等氣體從噴嘴256的前端256a朝向壓頭238的前端部的側面噴射。藉此，附著於壓頭238的前端部之異物會被吹飛、去除。此外，使用氣體供給單元254去除異物之時間點並無限制。例如，異物的去除係在一晶片21的試驗完成後且進行下一晶片21的試驗之前的期間，視需求實施。Specifically, the valve 258 of the gas supply unit 254 is opened, and gas such as air supplied from the gas supply source 260 is sprayed from the front end 256 a of the nozzle 256 toward the side surface of the front end portion of the ram 238 . Thereby, the foreign matter adhering to the front end of the indenter 238 is blown away and removed. In addition, there is no limit to the point of time when the foreign matter is removed using the gas supply unit 254 . For example, the removal of foreign matter is performed as needed during the period after the test of one wafer 21 is completed and before the test of the next wafer 21 is performed.
又，朝向壓頭238的前端部噴射之氣體係在上部容器252的內部流動，且亦會被吹至一對支撐台208上。其結果，附著於支撐部208b或接觸構件212的接觸面212a之異物（晶片21的碎片23等）會被氣體吹飛而去除。藉此，在進行下一試驗時，可防止異物與晶片21的下表面側接觸而損傷晶片21。In addition, the gas injected toward the front end of the pressure head 238 flows in the upper container 252 and is also blown onto the pair of supporting tables 208 . As a result, foreign objects (fragments 23 of the wafer 21 and the like) adhering to the support portion 208 b or the contact surface 212 a of the contact member 212 are blown away by the gas and removed. This prevents foreign matter from contacting the lower surface side of the wafer 21 and damaging the wafer 21 when the next test is performed.
此外，若假設噴嘴256的前端256a係朝向支撐台208的上表面208a配置，則從噴嘴256所噴射之空氣會被強力地吹至支撐台208的上表面208a側。此情形，附著於支撐部208b或接觸構件212之異物在被空氣吹飛而在上部容器252的內部飛揚後，有時會再次附著於支撐部208b或接觸構件212。因此，難以將異物從支撐台208的上表面208a側適當去除。In addition, if the front end 256a of the nozzle 256 is arranged toward the upper surface 208a of the supporting table 208, the air injected from the nozzle 256 will be blown to the upper surface 208a side of the supporting table 208 strongly. In this case, the foreign matter adhering to the support portion 208b or the contact member 212 may adhere to the support portion 208b or the contact member 212 again after being blown away by the air and flying inside the upper container 252 . Therefore, it is difficult to appropriately remove foreign matter from the upper surface 208 a side of the support table 208 .
於是，在測量單元200中，以噴嘴256的前端256a朝向壓頭238的前端部的側面開口的方式定位噴嘴256。藉此，被吹至支撐台208的上表面208a之空氣的強度會被適度減弱。其結果，會從支撐台208的上表面208a側適當地去除異物。Then, in the measurement unit 200 , the nozzle 256 is positioned such that the front end 256 a of the nozzle 256 opens toward the side surface of the front end portion of the indenter 238 . Accordingly, the strength of the air blown to the upper surface 208 a of the supporting platform 208 is moderately weakened. As a result, foreign matter is appropriately removed from the upper surface 208 a side of the support table 208 .
若反復進行晶片21的強度的測量及由氣體供給單元254所進行之異物去除，則在下部容器204的內部會累積晶片21的碎片23。於是，使用排出單元262（參照圖9）將累積於下部容器204的內部之碎片23進行回收。When the measurement of the strength of the wafer 21 and the removal of foreign matter by the gas supply unit 254 are repeated, fragments 23 of the wafer 21 accumulate in the lower container 204 . Then, the debris 23 accumulated in the lower container 204 is collected using the discharge unit 262 (see FIG. 9 ).
具體而言，打開排出單元262的閥266，從設於下部容器204之排出口204d吸引累積於開口204b的內部之碎片23。所吸引之碎片23通過排出路徑264，在回收部270被回收。藉此，無需以手動作業清掃下部容器204的開口204b的內部，即可迅速地去除碎片23。Specifically, the valve 266 of the discharge unit 262 is opened, and the debris 23 accumulated inside the opening 204b is sucked from the discharge port 204d provided in the lower container 204 . The attracted debris 23 passes through the discharge path 264 and is recovered in the recovery unit 270 . Thereby, the fragments 23 can be quickly removed without manually cleaning the inside of the opening 204b of the lower container 204 .
此外，在測量單元200中，上部容器252被形成為比下部容器204的開口204b更小，又，在上部容器252形成有供壓頭238插入之壓頭插入孔252d等。因此，即便使上部容器252朝向下部容器204下降，下部容器204的開口204b亦不會被上部容器252密封。藉此，在從排出口204d吸引晶片21的碎片23時，外部空氣會容易地被吸入開口204b，而可順利地進行晶片21的碎片23的吸引。In addition, in the measurement unit 200, the upper container 252 is formed smaller than the opening 204b of the lower container 204, and the upper container 252 is formed with an indenter insertion hole 252d for inserting the indenter 238, and the like. Therefore, even if the upper container 252 is lowered toward the lower container 204 , the opening 204 b of the lower container 204 is not sealed by the upper container 252 . Thereby, when the chips 23 of the wafer 21 are sucked from the discharge port 204d, outside air is easily drawn into the opening 204b, and the chips 23 of the wafer 21 can be sucked smoothly.
如圖2及圖3所示，在測量單元200的前方側設有顯示單元（顯示部、顯示裝置）280，所述顯示單元（顯示部、顯示裝置）280顯示關於檢查裝置2之資訊。顯示單元280可藉由各種顯示器構成，並顯示關於檢查晶片之各種資訊（檢查條件、檢查狀況、檢查結果等）。As shown in FIGS. 2 and 3 , a display unit (display unit, display device) 280 for displaying information about the inspection device 2 is provided on the front side of the measurement unit 200 . The display unit 280 can be constituted by various displays, and displays various information (inspection conditions, inspection status, inspection results, etc.) on inspected wafers.
例如，能使用觸控面板式的顯示器作為顯示單元280。此情形，顯示單元280亦發揮作為用於將資訊輸入檢查裝置2之輸入單元（輸入部、輸入裝置）的功能，操作員可藉由顯示單元280的觸控操作，而將資訊輸入檢查裝置2。亦即，顯示單元280發揮作為使用者界面的功能。For example, a touch panel type display can be used as the display unit 280 . In this case, the display unit 280 also functions as an input unit (input unit, input device) for inputting information into the inspection device 2, and the operator can input information into the inspection device 2 by touching the display unit 280. . That is, the display unit 280 functions as a user interface.
又，檢查裝置2具備控制檢查裝置2之控制單元（控制部、控制裝置）290。控制單元290與構成檢查裝置2之各構成要素（卡匣載置台6、框架固定機構14、搬送機構20、移動機構30、上推機構50、攝像單元60、拾取機構70、筒夾移動機構80、晶片觀察機構100、晶片反轉機構150、測量單元200、顯示單元280等）連接。Furthermore, the inspection device 2 includes a control unit (control unit, control device) 290 that controls the inspection device 2 . The control unit 290 and the components constituting the inspection device 2 (cassette mounting table 6, frame fixing mechanism 14, conveying mechanism 20, moving mechanism 30, push-up mechanism 50, camera unit 60, pick-up mechanism 70, collet moving mechanism 80 , Wafer observation mechanism 100, wafer inversion mechanism 150, measurement unit 200, display unit 280, etc.) are connected.
例如，控制單元290係藉由電腦所構成，且包含：CPU（Central Processing Unit，中央處理單元）等處理器，其進行檢查裝置2的運轉所需的運算；以及ROM（Read Only Memory，唯讀記憶體）、RAM（Random Access Memory，隨機存取記憶體）等記憶體，其等記憶用於檢查裝置2的運轉之各種資訊（資料、程式等）。而且，控制單元290係藉由將控制信號輸出至檢查裝置2的各構成要素，而控制各構成要素的動作，使檢查裝置2運轉。For example, the control unit 290 is constituted by a computer, and includes: CPU (Central Processing Unit, central processing unit) and other processors, which perform calculations required for the operation of the inspection device 2; and ROM (Read Only Memory, read-only Memory), RAM (Random Access Memory, random access memory) and other memories, which store various information (data, programs, etc.) for checking the operation of the device 2 . Furthermore, the control unit 290 controls the operation of each component by outputting a control signal to each component of the inspection device 2 to operate the inspection device 2 .
＜晶片的檢查例一＞ 接著，針對使用圖2及圖3所示之檢查裝置2檢查晶片之晶片的檢查方法的具體例進行說明。圖15係表示第一晶片檢查方法之流程圖。第一晶片檢查方法包含：分割步驟S1、攝像步驟S2以及檢查步驟S3。藉由依序實施分割步驟S1、攝像步驟S2、檢查步驟S3，而將被加工物11分割成多個晶片21（參照圖1（B）），且檢查晶片21的狀態。 ＜Wafer inspection example 1＞ Next, a specific example of a wafer inspection method for inspecting a wafer using the inspection apparatus 2 shown in FIGS. 2 and 3 will be described. Fig. 15 is a flowchart showing the first wafer inspection method. The first wafer inspection method includes a dividing step S1, an imaging step S2, and an inspection step S3. By performing the dividing step S1 , the imaging step S2 , and the inspection step S3 in order, the workpiece 11 is divided into a plurality of wafers 21 (see FIG. 1(B) ), and the states of the wafers 21 are inspected.
首先，藉由將被加工物11以預定的分割加工條件進行加工，而將被加工物11分割成多個晶片21（分割步驟S1）。在分割步驟S1中，使用切割裝置、雷射加工裝置等加工裝置而加工被加工物11，藉此將被加工物11分割成多個晶片21。以下，作為一例，針對分割步驟S1包含在被加工物11的內部形成改質層之步驟（改質層形成步驟）與對被加工物11施加外力之步驟（外力施加步驟）之情形進行說明。First, the workpiece 11 is divided into a plurality of wafers 21 by processing the workpiece 11 under predetermined dividing processing conditions (dividing step S1 ). In the dividing step S1 , the workpiece 11 is processed using a processing device such as a dicing device or a laser processing device, thereby dividing the workpiece 11 into a plurality of wafers 21 . Hereinafter, as an example, a case where the dividing step S1 includes a step of forming a modified layer inside the workpiece 11 (modified layer forming step) and a step of applying an external force to the workpiece 11 (external force applying step) will be described.
圖16係表示雷射加工裝置300之局部剖面前視圖。在改質層形成步驟中，以雷射加工裝置300對被加工物11實施雷射加工，藉此在被加工物11的內部形成改質層。此外，在圖16中，X軸方向（加工進給方向、第一水平方向）與Y軸方向（分度進給方向、第二水平方向）係互相垂直的方向。又，Z軸方向（鉛直方向、上下方向、高度方向）係與X軸方向及Y軸方向垂直的方向。FIG. 16 is a partial sectional front view showing the laser processing device 300 . In the modified layer forming step, the laser processing device 300 is used to perform laser processing on the object 11 to form a modified layer inside the object 11 . In addition, in FIG. 16 , the X-axis direction (machining feed direction, first horizontal direction) and the Y-axis direction (index feed direction, second horizontal direction) are directions perpendicular to each other. In addition, the Z-axis direction (vertical direction, vertical direction, and height direction) is a direction perpendicular to the X-axis direction and the Y-axis direction.
雷射加工裝置300具備保持被加工物11之卡盤台（保持台）302。卡盤台302的上表面係與水平面（XY平面）大致平行的圓形的平坦面，並構成保持被加工物11之保持面302a。保持面302a係透過形成於卡盤台302的內部之流路（未圖示）、閥（未圖示）等而與噴射器等吸引源（未圖示）連接。The laser processing device 300 includes a chuck table (holding table) 302 that holds the workpiece 11 . The upper surface of the chuck table 302 is a circular flat surface substantially parallel to the horizontal plane (XY plane), and constitutes a holding surface 302 a for holding the workpiece 11 . The holding surface 302 a is connected to a suction source (not shown) such as an ejector through a flow path (not shown), a valve (not shown), and the like formed inside the chuck table 302 .
在卡盤台302連結有使卡盤台302沿著X軸方向及Y軸方向移動之滾珠螺桿式的移動機構（未圖示）。又，在卡盤台302連結有使卡盤台302繞著與保持面302a大致垂直的旋轉軸旋轉之馬達等旋轉驅動源（未圖示）。再者，在卡盤台302的周圍設有多個夾具304，所述夾具304將支撐被加工物11之框架17握持並固定。A ball screw type moving mechanism (not shown) for moving the chuck table 302 in the X-axis direction and the Y-axis direction is connected to the chuck table 302 . Also, a rotational drive source (not shown) such as a motor that rotates the chuck table 302 around a rotation axis substantially perpendicular to the holding surface 302 a is connected to the chuck table 302 . Furthermore, a plurality of clamps 304 are provided around the chuck table 302 , and the clamps 304 hold and fix the frame 17 supporting the workpiece 11 .
又，雷射加工裝置300具備照射雷射光束之雷射照射單元306。雷射照射單元306具備：YAG雷射、YVO 4雷射、YLF雷射等雷射振盪器（未圖示）；以及配置於卡盤台302的上方之雷射加工頭308。 Moreover, the laser processing apparatus 300 is equipped with the laser irradiation unit 306 which irradiates a laser beam. The laser irradiation unit 306 includes: laser oscillators (not shown) such as YAG laser, YVO 4 laser, and YLF laser; and a laser processing head 308 arranged above the chuck table 302 .
在雷射加工頭308中內建有將從雷射振盪器射出之脈衝振盪的雷射光束導引往被加工物11之光學系統，光學系統包含使雷射光束聚光之聚光透鏡等光學元件。藉由從雷射加工頭308所照射之雷射光束310而將被加工物11進行加工。In the laser processing head 308, an optical system for guiding the pulsed laser beam emitted from the laser oscillator to the workpiece 11 is built in. The optical system includes optical systems such as a condenser lens for converging the laser beam. element. The workpiece 11 is processed by the laser beam 310 irradiated from the laser processing head 308 .
再者，雷射加工裝置300具備控制雷射加工裝置300之控制單元（控制部、控制裝置）312。控制單元312係與構成雷射加工裝置300之各構成要素（雷射照射單元306等）連接。Furthermore, the laser processing device 300 includes a control unit (control unit, control device) 312 that controls the laser processing device 300 . The control unit 312 is connected to each component (the laser irradiation unit 306 and the like) constituting the laser processing apparatus 300 .
例如，控制單元312係藉由電腦所構成，且包含：CPU等處理器，其進行雷射加工裝置300的運轉所需的運算；以及ROM、RAM等記憶體，其記憶用於雷射加工裝置300的運轉之各種資訊（資料、程式等）。而且，控制單元312藉由將控制信號輸出至雷射加工裝置300的各構成要素，而控制各構成要素的動作，使雷射加工裝置300運轉。For example, the control unit 312 is constituted by a computer, and includes: a processor such as a CPU, which performs calculations required for the operation of the laser processing device 300; and memories such as ROM and RAM, whose memory is used for the laser processing device Various information (data, programs, etc.) on the operation of 300. Furthermore, the control unit 312 controls the operation of each component by outputting a control signal to each component of the laser processing device 300 , and operates the laser processing device 300 .
在以雷射加工裝置300加工被加工物11時，首先，藉由卡盤台302而保持被加工物11。例如，被加工物11係以正面11a側朝向上方且背面11b側（膠膜19側）與保持面302a相向的方式配置於卡盤台302上。又，框架17被多個夾具304固定。若在此狀態下使吸引源的吸引力（負壓）作用於保持面302a，則被加工物11係隔著膠膜19而被卡盤台302吸引保持。When processing the workpiece 11 with the laser processing device 300 , first, the workpiece 11 is held by the chuck table 302 . For example, the workpiece 11 is disposed on the chuck table 302 with the front 11 a facing upward and the back 11 b (adhesive film 19 side) facing the holding surface 302 a. Also, the frame 17 is fixed by a plurality of clamps 304 . When the suction force (negative pressure) of the suction source is applied to the holding surface 302 a in this state, the workpiece 11 is sucked and held by the chuck table 302 through the adhesive film 19 .
接著，使卡盤台302旋轉，將預定的切割道13（參照圖1（A））的長度方向對齊X軸方向。又，以將照射雷射光束310之區域定位於預定的切割道13的延長線上之方式，調節卡盤台302在Y軸方向之位置。再者，以將雷射光束310的聚光點定位於與被加工物11的內部（正面11a與背面11b之間）相同的高度位置（在Z軸方向之位置）之方式，調節雷射加工頭308的位置、光學系統的配置。Next, the chuck table 302 is rotated to align the longitudinal direction of the predetermined scribe line 13 (see FIG. 1(A) ) with the X-axis direction. Also, the position of the chuck table 302 in the Y-axis direction is adjusted so that the area where the laser beam 310 is irradiated is positioned on the extension line of the predetermined scribe line 13 . Furthermore, the laser processing is adjusted in such a way that the laser beam 310 is positioned at the same height position (position in the Z-axis direction) as the inside of the workpiece 11 (between the front surface 11a and the rear surface 11b ). The position of the head 308 and the configuration of the optical system.
然後，一邊從雷射加工頭308照射雷射光束310，一邊使卡盤台302沿著X軸方向移動。藉此，卡盤台302與雷射光束310係沿著加工進給方向以預定的速度（加工進給速度）相對地移動。其結果，從被加工物11的正面11a側沿著切割道13照射雷射光束310。Then, the chuck table 302 is moved in the X-axis direction while the laser beam 310 is irradiated from the laser processing head 308 . Thereby, the chuck table 302 and the laser beam 310 move relatively at a predetermined speed (processing feed speed) along the processing feed direction. As a result, the laser beam 310 is irradiated along the scribe line 13 from the front surface 11 a side of the workpiece 11 .
此外，雷射加工裝置300以預先被登錄於控制單元312之預定的分割加工條件加工被加工物11。具體而言，以被加工物11中已照射雷射光束310之區域會因多光子吸收而改質並變質的方式，設定雷射光束310的照射條件。In addition, the laser processing apparatus 300 processes the workpiece 11 under predetermined dividing processing conditions registered in the control unit 312 in advance. Specifically, the irradiation conditions of the laser beam 310 are set so that the area of the workpiece 11 irradiated with the laser beam 310 is modified and degraded by multiphoton absorption.
雷射光束310的波長被設定成至少雷射光束310的一部分穿透被加工物11。亦即，雷射光束310係對被加工物11具有穿透性之雷射光束。又，雷射光束310的其他照射條件亦被設定成被加工物11會適當地被改質。例如，在被加工物11為單晶矽晶圓之情形中，雷射光束310的照射條件可設定如下。 波長：1064nm 平均輸出：1W 重複頻率：100kHz 加工進給速度：800mm/s The wavelength of the laser beam 310 is set so that at least a part of the laser beam 310 penetrates the workpiece 11 . That is, the laser beam 310 is a laser beam penetrating the workpiece 11 . In addition, other irradiation conditions of the laser beam 310 are also set so that the workpiece 11 can be appropriately modified. For example, when the workpiece 11 is a silicon single crystal wafer, the irradiation conditions of the laser beam 310 can be set as follows. Wavelength: 1064nm Average output: 1W Repetition frequency: 100kHz Processing feed speed: 800mm/s
若以上述的分割加工條件加工被加工物11，則被加工物11的內部會因多光子吸收而改質並變質，而在被加工物11的內部沿著切割道13形成改質層（變質層）25。之後，藉由重複同樣的程序，而沿著其他切割道13照射雷射光束310。其結果，在被加工物11的內部，多個改質層25沿著各切割道13形成為網格狀。If the workpiece 11 is processed under the above-mentioned split processing conditions, the inside of the workpiece 11 will be modified and deteriorated due to multiphoton absorption, and a modified layer (modified layer) will be formed along the scribe line 13 inside the workpiece 11. layers) 25. Afterwards, by repeating the same procedure, the laser beam 310 is irradiated along the other cutting lines 13 . As a result, inside the workpiece 11 , a plurality of modified layers 25 are formed in a grid shape along each scribe line 13 .
被加工物11之中形成有改質層25之區域變得比被加工物11的其他區域脆。因此，若對被加工物11施加外力，則被加工物11會以改質層25為起點而沿著切割道13被分割。亦即，改質層25發揮作為分割起點（分割的契機）的功能。The region of the workpiece 11 where the modified layer 25 is formed becomes brittle than other regions of the workpiece 11 . Therefore, when an external force is applied to the workpiece 11 , the workpiece 11 is divided along the scribe lines 13 starting from the modified layer 25 . That is, the modified layer 25 functions as a division starting point (a trigger for division).
此外，改質層25亦可在被加工物11的厚度方向形成有多段。例如，在被加工物11為厚度200μm以上的單晶矽晶圓等之情形中，藉由形成兩層以上的改質層25，而變得容易適當地分割被加工物11。在形成多個改質層25之情形，一邊改變雷射光束310的聚光點的高度位置，一邊沿著各切割道13分別多次逐一照射雷射光束310。In addition, the modified layer 25 may be formed in multiple stages in the thickness direction of the workpiece 11 . For example, when the workpiece 11 is a silicon single crystal wafer with a thickness of 200 μm or more, by forming two or more modified layers 25 , it becomes easy to properly divide the workpiece 11 . In the case of forming a plurality of modified layers 25 , the laser beam 310 is irradiated a plurality of times along each scribe line 13 one by one while changing the height position of the converging point of the laser beam 310 .
接著，藉由對被加工物11施加外力，而以改質層25為起點沿著切割道13分割被加工物11（外力施加步驟）。例如，在外力施加步驟中，將貼附於被加工物11之膠膜19拉伸而擴張，藉此對被加工物11施加外力。此外，膠膜19的擴張可使用專用的擴張裝置進行，亦可由作業者以手動作業進行。Next, by applying an external force to the workpiece 11 , the workpiece 11 is divided along the scribe lines 13 starting from the modified layer 25 (external force applying step). For example, in the external force applying step, the adhesive film 19 attached to the workpiece 11 is stretched and expanded, thereby applying an external force to the workpiece 11 . In addition, the expansion of the adhesive film 19 can be performed using a dedicated expansion device, or can be performed manually by an operator.
圖17（A）係表示擴張裝置400之局部剖面前視圖。擴張裝置400具備被形成為中空圓柱狀之鼓輪402。在鼓輪402的上端部，沿著鼓輪402的圓周方向大致等間隔地排列有多個滾輪404。又，在鼓輪402的外側配置有多個柱狀的支撐構件406。在支撐構件406的下端部分別連結有使支撐構件406沿著鉛直方向移動（升降）之氣缸（未圖示）。FIG. 17(A) is a partial sectional front view showing the expansion device 400. FIG. The expansion device 400 includes a drum 402 formed in a hollow cylindrical shape. On the upper end portion of the drum 402 , a plurality of rollers 404 are arranged at substantially equal intervals along the circumferential direction of the drum 402 . Also, a plurality of columnar support members 406 are arranged outside the drum 402 . Air cylinders (not shown) for vertically moving (lifting) the supporting member 406 are connected to lower ends of the supporting member 406 .
在多個支撐構件406的上端部固定有環狀的工作台408。在工作台408的中央部設有在厚度方向貫通工作台408之圓形的開口408a。開口408a的直徑大於鼓輪402的直徑，成為能將鼓輪402的上端部插入開口408a。又，在工作台408的外周部配置有多個夾具410，所述夾具410將支撐被加工物11之框架17握持並固定。An annular table 408 is fixed to upper ends of the plurality of supporting members 406 . A circular opening 408a penetrating through the table 408 in the thickness direction is provided at the central portion of the table 408 . The diameter of the opening 408a is larger than the diameter of the drum 402, so that the upper end of the drum 402 can be inserted into the opening 408a. In addition, a plurality of jigs 410 for holding and fixing the frame 17 supporting the workpiece 11 is disposed on the outer peripheral portion of the table 408 .
在分割被加工物11時，首先，藉由氣缸（未圖示）而使支撐構件406升降，並將工作台408的上表面配置於與滾輪404的上端大致相同之高度位置。然後，將框架17配置於工作台408上，藉由多個夾具410而固定框架17。此時，被加工物11被配置成與鼓輪402的內側重疊。When dividing the workpiece 11 , first, the support member 406 is raised and lowered by an air cylinder (not shown), and the upper surface of the table 408 is arranged at substantially the same height as the upper end of the roller 404 . Then, the frame 17 is arranged on the workbench 408 , and the frame 17 is fixed by a plurality of clamps 410 . At this time, the workpiece 11 is arranged to overlap the inside of the drum 402 .
接著，藉由氣缸（未圖示）而使支撐構件406下降，而降低工作台408及夾具410。藉此，框架17被下壓，膠膜19在被滾輪404支撐之狀態下被拉伸。其結果，膠膜19放射狀地延伸而擴張。Then, the support member 406 is lowered by the air cylinder (not shown), so as to lower the workbench 408 and the fixture 410 . Thereby, the frame 17 is pressed down, and the adhesive film 19 is stretched while being supported by the rollers 404 . As a result, the glue film 19 radially extends and expands.
圖17（B）係表示擴張膠膜19之擴張裝置400之局部剖面前視圖。若膠膜19被擴張，則會對被固定於膠膜19之被加工物11施加朝向被加工物11的半徑方向外側之外力。其結果，改質層25發揮作為分割起點的功能，被加工物11沿著切割道13斷裂。藉此，被加工物11被分割成分別具備元件15（參照圖1（B））之多個晶片21。FIG. 17(B) is a partial sectional front view showing the expansion device 400 for expanding the adhesive film 19. FIG. When the adhesive film 19 is expanded, an external force directed outward in the radial direction of the workpiece 11 is applied to the workpiece 11 fixed to the adhesive film 19 . As a result, the modified layer 25 functions as a splitting origin, and the workpiece 11 is broken along the scribe line 13 . Thereby, the workpiece 11 is divided into a plurality of wafers 21 each including the element 15 (see FIG. 1(B) ).
晶片21包含：大致互相平行的正面（第一面）21a及背面（第二面）21b；以及與正面21a及背面21b連接之四個側面21c。正面21a相當於被加工物11的正面11a的一部分，背面21b相當於被加工物11的背面11b的一部分。又，側面21c相當於藉由分割被加工物11而新形成之面（被分割面、被加工面）。The wafer 21 includes: a front surface (first surface) 21a and a rear surface (second surface) 21b substantially parallel to each other; and four side surfaces 21c connected to the front surface 21a and the rear surface 21b. The front surface 21 a corresponds to a part of the front surface 11 a of the workpiece 11 , and the back surface 21 b corresponds to a part of the rear surface 11 b of the workpiece 11 . Also, the side surface 21c corresponds to a newly formed surface (divided surface, processed surface) by dividing the workpiece 11 .
如上所述，在分割步驟S1中，藉由實施改質層形成步驟及外力施加步驟，而將被加工物11分割成多個晶片21。但是，被加工物11的分割方法並無限制。例如，在分割步驟S1中，亦可對被加工物11實施雷射燒蝕加工。在此情形中，沿著切割道13照射對被加工物11具有吸收性之雷射光束。藉此，對被加工物11施加燒蝕加工，沿著切割道13形成從被加工物11的正面11a至背面11b之雷射加工槽。若沿著全部切割道13形成雷射加工槽，則被加工物11被分割成多個晶片21。As described above, in the dividing step S1, the object 11 is divided into a plurality of wafers 21 by performing the modified layer forming step and the external force applying step. However, the method of dividing the workpiece 11 is not limited. For example, in the dividing step S1 , laser ablation processing may be performed on the workpiece 11 . In this case, a laser beam absorbing to the workpiece 11 is irradiated along the scribe line 13 . Thereby, ablation processing is applied to the workpiece 11 , and a laser-processed groove from the front surface 11 a to the rear surface 11 b of the workpiece 11 is formed along the scribe line 13 . When laser processing grooves are formed along all the dicing lines 13 , the workpiece 11 is divided into a plurality of wafers 21 .
接著，藉由拍攝晶片21的側面，而取得顯示晶片21的側面之影像（側面影像）（攝像步驟S2）。例如，在攝像步驟S2中，藉由檢查裝置2（參照圖2及圖3）而取得晶片21的側面影像。Next, by photographing the side surface of the wafer 21 , an image (side image) showing the side surface of the wafer 21 is obtained (imaging step S2 ). For example, in the imaging step S2 , the side image of the wafer 21 is acquired by the inspection device 2 (see FIGS. 2 and 3 ).
在分割步驟S1中已被分割成多個晶片21之被加工物11被容納於卡匣8（參照圖2及圖3），並被搬送至檢查裝置2。然後，檢查裝置2運轉，藉由測量單元200而測量晶片21的強度。The workpiece 11 divided into a plurality of wafers 21 in the dividing step S1 is accommodated in the cassette 8 (see FIGS. 2 and 3 ), and is conveyed to the inspection device 2 . Then, the inspection device 2 operates to measure the strength of the wafer 21 by the measuring unit 200 .
此處，如同前述，在藉由拾取機構70及筒夾移動機構80（參照圖2）而將晶片21搬送至測量單元200之中途，進行由晶片觀察機構100所進行之晶片21的觀察。此時，藉由側面觀察機構112所具備之攝像單元116而拍攝晶片21的側面。其結果，取得顯示晶片21的側面之影像（側面影像）。Here, as described above, the wafer 21 is observed by the wafer observation mechanism 100 while the wafer 21 is being transported to the measurement unit 200 by the pickup mechanism 70 and the collet moving mechanism 80 (see FIG. 2 ). At this time, the side surface of the wafer 21 is photographed by the imaging unit 116 included in the side observation mechanism 112 . As a result, an image (side image) showing the side surface of the wafer 21 is obtained.
圖18係表示晶片21的側面影像500之影像圖。若將被加工物11分割成多個晶片21，則發揮作為分割起點的功能之改質層25會作為加工痕而殘留於晶片21的側面21c。因此，若拍攝晶片21的側面21c，則會取得包含加工痕（改質層25）的影像之側面影像500。FIG. 18 is an image diagram showing a side image 500 of a wafer 21 . When the workpiece 11 is divided into a plurality of wafers 21 , the modified layer 25 functioning as a starting point for division remains on the side surfaces 21 c of the wafers 21 as processing marks. Therefore, when the side surface 21c of the wafer 21 is photographed, a side image 500 including an image of the processing trace (modified layer 25 ) is obtained.
接著，藉由將從側面影像500所提取之評價值與閾值進行比較，而檢查晶片21的狀態（檢查步驟S3）。在檢查步驟S3中，從側面影像500提取與晶片21的強度對應之預定值作為評價值。然後，藉由判定評價值是否在預定的容許範圍內，而檢查晶片21的狀態為正常或異常。Next, the state of the wafer 21 is inspected by comparing the evaluation value extracted from the silhouette image 500 with a threshold value (inspection step S3 ). In the inspection step S3, a predetermined value corresponding to the intensity of the wafer 21 is extracted from the silhouette image 500 as an evaluation value. Then, whether the state of the wafer 21 is normal or abnormal is checked by judging whether the evaluation value is within a predetermined allowable range.
例如，作為評價值，提取與在側面影像500中顯示改質層25之區域500a中之階度對應之值。晶片21的改質層25所殘留之區域係因照射雷射光束而被改質。因此，側面影像500的區域500a係以與側面影像500的其他區域不同之階度而顯示。例如，如圖18所示，側面影像500的區域500a係以比其他區域更深色而顯示。For example, as the evaluation value, a value corresponding to the gradation in the region 500a in which the modified layer 25 is displayed in the silhouette image 500 is extracted. The region where the modification layer 25 of the wafer 21 remains is modified by irradiation with a laser beam. Therefore, the region 500 a of the silhouette image 500 is displayed with a different gradation than other regions of the silhouette image 500 . For example, as shown in FIG. 18, an area 500a of the silhouette image 500 is displayed in a darker color than other areas.
再者，側面影像500的區域500a的階度係因應晶片21的改質的程度而不同。例如，雷射光束310（參照圖16）的平均輸出越高，則改質的程度越大，側面影像500的區域500a以越深色顯示。又，有晶片21的改質程度越大，則晶片21的強度越降低之傾向。因此，從側面影像500提取區域500a的階度，並將區域500a的階度與預先設定之預定的閾值進行比較，藉此可評價晶片21的強度。Furthermore, the level of the region 500 a of the silhouette image 500 is different according to the degree of modification of the wafer 21 . For example, the higher the average output of the laser beam 310 (see FIG. 16 ), the larger the degree of modification, and the darker the region 500 a of the silhouette 500 is displayed. Moreover, the strength of the wafer 21 tends to decrease as the degree of modification of the wafer 21 increases. Therefore, the intensity of the wafer 21 can be evaluated by extracting the gradient of the region 500 a from the silhouette image 500 and comparing the gradient of the region 500 a with a preset predetermined threshold.
具體而言，在檢查晶片21前預先設定閾值，所述閾值定義表示區域500a的色相、彩度或亮度等之值（階度值）的容許範圍。例如，設定階度值的上限值作為閾值。然後，對藉由拍攝晶片21所取得之側面影像500施加影像處理，而計算區域500a的階度值。此外，區域500a的範圍可藉由已目視確認側面影像500之操作員以手動而指定，亦可藉由對側面影像500施加影像處理而自動特定。Specifically, before inspecting the wafer 21 , a threshold value defining an allowable range of values (gradation values) indicating hue, chroma, or brightness of the region 500 a is set in advance before inspection of the wafer 21 . For example, an upper limit value of the gradation value is set as a threshold value. Then, image processing is applied to the side image 500 obtained by capturing the chip 21 to calculate the gradation value of the region 500a. In addition, the range of the area 500 a may be manually specified by an operator who has visually confirmed the silhouette image 500 , or may be automatically specified by applying image processing to the silhouette image 500 .
之後，藉由將區域500a的階度值與閾值進行比較，而確認區域500a的階度值是否落入容許範圍內。例如，將區域500a所包含之各像素的階度的平均值與閾值進行比較。然後，在區域500a的階度值為閾值（上限值）以下之情形中，晶片21的強度滿足基準，判定晶片21為正常。另一方面，在區域500a的階度值大於閾值（上限值）之情形中，晶片21的強度不滿足基準，判定晶片21為異常。Afterwards, by comparing the gradation value of the region 500a with a threshold value, it is confirmed whether the gradation value of the region 500a falls within the allowable range. For example, the average value of the gradation of each pixel included in the region 500a is compared with a threshold. Then, when the gradation value of the region 500a is not more than the threshold value (upper limit value), the strength of the wafer 21 satisfies the reference, and the wafer 21 is determined to be normal. On the other hand, when the gradation value of the region 500a is greater than the threshold value (upper limit value), the strength of the wafer 21 does not satisfy the standard, and the wafer 21 is determined to be abnormal.
又，作為評價值，亦可提取與側面影像500所顯示之改質層25的位置對應之值。如圖18所示，在側面影像500中顯示晶片21的背面21b與殘留於晶片21之加工痕（改質層25）。而且，改質層25越接近晶片21的背面21b，則對晶片21施加衝擊時晶片21越容易發生損壞，晶片21的強度變越低。因此，例如可將從改質層25起至晶片21的背面21b為止的距離S使用作為評價值。In addition, as an evaluation value, a value corresponding to the position of the modified layer 25 displayed in the silhouette image 500 may be extracted. As shown in FIG. 18 , the rear surface 21 b of the wafer 21 and the processing marks (reformed layer 25 ) remaining on the wafer 21 are displayed in the side image 500 . Furthermore, the closer the modified layer 25 is to the back surface 21b of the wafer 21, the easier the wafer 21 is damaged when an impact is applied to the wafer 21, and the strength of the wafer 21 becomes lower. Therefore, for example, the distance S from the modified layer 25 to the rear surface 21b of the wafer 21 can be used as an evaluation value.
在使用距離S作為評價值之情形中，在檢查晶片21前預先設定定義距離S的容許範圍之閾值。例如，設定距離S的下限值作為閾值。然後，對藉由拍攝晶片21所取得之側面影像500施加影像處理，而計算距離S。此外，距離S亦可藉由已目視確認側面影像500之操作員指定改質層25的位置與背面21b的位置而計算，亦可藉由對側面影像500施加影像處理而自動計算。In the case of using the distance S as the evaluation value, a threshold defining the allowable range of the distance S is set in advance before inspecting the wafer 21 . For example, a lower limit value of the distance S is set as a threshold. Then, image processing is applied to the side image 500 obtained by capturing the chip 21, and the distance S is calculated. In addition, the distance S can also be calculated by specifying the position of the modified layer 25 and the position of the back surface 21 b by an operator who has visually confirmed the silhouette image 500 , or can be automatically calculated by applying image processing to the silhouette image 500 .
之後，藉由將距離S與閾值進行比較，而確認距離S的值是否落入容許範圍內。具體而言，在距離S為閾值（下限值）以上之情形中，晶片21的強度滿足基準，判定晶片21為正常。另一方面，在距離S低於閾值（下限值）之情形中，晶片21的強度不滿足基準，判定晶片21為異常。Afterwards, by comparing the distance S with a threshold, it is confirmed whether the value of the distance S falls within the allowable range. Specifically, when the distance S is equal to or greater than the threshold value (lower limit value), the strength of the wafer 21 satisfies the reference, and the wafer 21 is determined to be normal. On the other hand, when the distance S is lower than the threshold value (lower limit value), the strength of the wafer 21 does not satisfy the standard, and it is determined that the wafer 21 is abnormal.
但是，從側面影像500所提取之評價值並不受限於區域500a的階度值或距離S。例如，亦可將從改質層25起至晶片21的正面21a為止的距離、改質層25的厚度等使用作為評價值。However, the evaluation value extracted from the silhouette image 500 is not limited to the gradient value or the distance S of the region 500a. For example, the distance from the modified layer 25 to the front surface 21 a of the wafer 21 , the thickness of the modified layer 25 , and the like may be used as evaluation values.
此外，在判定晶片21為異常之情形中，查明異常的原因，並因應需要而變更在分割步驟S1中之被加工物11的分割加工條件（雷射光束的照射條件、膠膜19的擴張條件等）。例如，在區域500a的階度值大於閾值（上限值）之情形中，藉由降低雷射光束310（參照圖16）的平均輸出，而減少被加工物11的改質程度。又，在距離S低於閾值（下限值）之情形中，調節雷射光束310（參照圖16）的聚光點的高度位置。藉此，將之後所形成之晶片21的強度維持在一定以上。In addition, when it is determined that the wafer 21 is abnormal, the cause of the abnormality is found out, and the conditions for dividing the workpiece 11 in the dividing step S1 (irradiation conditions of the laser beam, expansion of the adhesive film 19, etc.) are changed as necessary. conditions, etc.). For example, when the gradation value of the region 500a is larger than the threshold value (upper limit value), the modification degree of the workpiece 11 is reduced by reducing the average output of the laser beam 310 (see FIG. 16 ). Also, when the distance S is lower than the threshold value (lower limit value), the height position of the converging point of the laser beam 310 (see FIG. 16 ) is adjusted. Thereby, the strength of the wafer 21 to be formed later is maintained at a certain level or more.
又，在重設被加工物11的分割加工條件時，藉由操作員而確認側面影像500。藉此，會直觀地掌握晶片21的改質狀態，變得容易查明晶片21的強度降低之原因。Moreover, when resetting the dividing processing conditions of the workpiece 11, the silhouette image 500 is checked by the operator. Thereby, the modified state of the wafer 21 can be grasped intuitively, and it becomes easy to find out the cause of the decrease in the strength of the wafer 21 .
如上所述，根據從側面影像500所提取之評價值而檢查晶片21的狀態，藉此更詳細地掌握在僅由測量單元200（參照圖2及圖3）所進行之抗撓強度的測量時不足以進行評價之晶片21的狀態（改質的程度、改質層25的位置等）。藉此，變得能對藉由分割被加工物11而得之晶片21進行適當的品質評價。As described above, the state of the wafer 21 is inspected based on the evaluation value extracted from the side image 500, whereby the measurement of the flexural strength only by the measurement unit 200 (see FIGS. 2 and 3 ) is grasped in more detail. The state of the wafer 21 (the degree of modification, the position of the modified layer 25, etc.) is insufficient for evaluation. Thereby, appropriate quality evaluation can be performed on the wafer 21 obtained by dividing the workpiece 11 .
＜晶片的檢查例二＞ 接著，針對使用檢查裝置2（參照圖2及圖3）、雷射加工裝置300（參照圖16）及擴張裝置400（參照圖17（A）及圖17（B））之晶片的檢查方法的更詳細的具體例進行說明。圖19係表示第二晶片檢查方法之流程圖。在第二晶片檢查方法中，實施設定晶片的評價條件之評價條件設定步驟S10與評價晶片之評價步驟S20。 ＜Inspection Example 2 of Wafer＞ Next, the inspection method for wafers using the inspection device 2 (see FIGS. 2 and 3 ), the laser processing device 300 (see FIG. 16 ) and the expansion device 400 (see FIGS. 17(A) and 17(B)) A more detailed specific example will be described. Fig. 19 is a flow chart showing the second wafer inspection method. In the second wafer inspection method, the evaluation condition setting step S10 of setting the evaluation conditions of the wafer and the evaluation step S20 of evaluating the wafer are implemented.
圖20（A）係表示在評價條件設定步驟S10中所使用之被加工物（第一被加工物）31之立體圖，圖20（B）係表示在評價步驟S20中所使用之被加工物（第二被加工物）41之立體圖。在評價條件設定步驟S10中，使用藉由分割被加工物31所得之晶片（第一晶片）而設定晶片的評價條件。又，在評價步驟S20中，評價藉由分割被加工物41所得之晶片（第二晶片）。FIG. 20(A) is a perspective view showing the workpiece (first workpiece) 31 used in the evaluation condition setting step S10, and FIG. 20(B) is a perspective view showing the workpiece used in the evaluation step S20 ( The perspective view of the second workpiece) 41. In the evaluation condition setting step S10 , wafer evaluation conditions are set using wafers (first wafers) obtained by dividing the workpiece 31 . In addition, in the evaluation step S20 , the wafer (second wafer) obtained by dividing the workpiece 41 is evaluated.
被加工物31具備大致互相平行的正面（第一面）31a及背面（第二面）31b，且藉由排列成網格狀之多條切割道（分割預定線）33而被劃分成多個矩形狀的區域。又，在藉由切割道33所劃分之多個區域分別形成有元件35。被加工物31相當於用於設定晶片的評價條件之晶圓。The workpiece 31 has a front side (first side) 31a and a back side (second side) 31b substantially parallel to each other, and is divided into a plurality of slits (segmentation lines) 33 arranged in a grid. rectangular area. Also, elements 35 are formed in each of the plurality of regions divided by the scribe lines 33 . The workpiece 31 corresponds to a wafer for setting evaluation conditions of the wafer.
被加工物41具備大致互相平行的正面（第一面）41a及背面（第二面）41b，且藉由排列成網格狀之多條切割道（分割預定線）43而被劃分成多個矩形狀的區域。又，在藉由切割道43所劃分之多個區域分別形成有元件45。被加工物41相當於用於製造產品用晶片之晶圓。The workpiece 41 has a front side (first side) 41a and a back side (second side) 41b substantially parallel to each other, and is divided into a plurality of slits (segmentation lines) 43 arranged in a grid. rectangular area. Also, elements 45 are formed in each of a plurality of regions divided by dicing lines 43 . The workpiece 41 corresponds to a wafer for manufacturing wafers for products.
被加工物31、41的材質、形狀、構造、大小等可與被加工物11（參照圖1（A））同樣地設定。又，元件35、45的種類、數量、形狀、構造、大小、排列等可與元件15（參照圖1（A））同樣地設定。被加工物31、41分別隔著膠膜19而被框架17支撐。The material, shape, structure, size, etc. of the workpieces 31 and 41 can be set in the same manner as the workpiece 11 (see FIG. 1(A) ). In addition, the types, numbers, shapes, structures, sizes, arrangements, etc. of the elements 35 and 45 can be set in the same manner as the elements 15 (see FIG. 1(A) ). The workpieces 31 and 41 are supported by the frame 17 via the adhesive film 19 , respectively.
在本晶片的檢查方法中，使用藉由分割被加工物31而得之第一晶片來選定評價條件，之後，根據該評價條件，評價藉由分割被加工物41而得之第二晶片。因此，被加工物31的材質、形狀、構造、大小等較佳為與被加工物41相同。又，元件35的種類、數量、形狀、構造、大小、排列等較佳為與元件45相同。但是，在第一晶片的強度與第二晶片的強度之間不產生大幅差異之範圍內，被加工物31與被加工物41、以及第一晶片與第二晶片亦可稍有差異。In this wafer inspection method, evaluation conditions are selected using the first wafer obtained by dividing the workpiece 31 , and then the second wafer obtained by dividing the workpiece 41 is evaluated based on the evaluation conditions. Therefore, the material, shape, structure, size, etc. of the workpiece 31 are preferably the same as those of the workpiece 41 . Also, the type, number, shape, structure, size, arrangement, etc. of the elements 35 are preferably the same as those of the elements 45 . However, there may be slight differences between the workpiece 31 and the workpiece 41 and between the first wafer and the second wafer as long as there is no significant difference between the strength of the first wafer and the strength of the second wafer.
圖21係表示檢查裝置2及雷射加工裝置300之方塊圖。在圖21中，除了表示檢查裝置2的控制單元290及雷射加工裝置300的控制單元312的功能性構成之方塊以外，還圖示了表示檢查裝置2的攝像單元116、測量單元200、顯示單元280之方塊以及表示雷射加工裝置300的雷射照射單元306之方塊。FIG. 21 is a block diagram showing the inspection device 2 and the laser processing device 300 . In FIG. 21 , in addition to the blocks representing the functional configuration of the control unit 290 of the inspection device 2 and the control unit 312 of the laser processing device 300, the imaging unit 116, the measurement unit 200, the display unit 200, and the display unit 2 of the inspection device 2 are also shown. The block of the unit 280 and the block of the laser irradiation unit 306 of the laser processing apparatus 300 are shown.
檢查裝置2的控制單元290包含：設定部292，其執行設定被加工物的加工條件及晶片的評價條件所需的處理；檢查部294，其執行檢查晶片所需的處理；以及記憶部296，其記憶用於在設定部292及檢查部294中之處理之資訊（資料、程式等）。又，控制單元290包含收發部298，所述收發部298將資訊發送至檢查裝置2的外部，且接收從檢查裝置2的外部輸入之資訊。The control unit 290 of the inspection apparatus 2 includes: a setting unit 292 that executes processing necessary for setting processing conditions of workpieces and evaluation conditions of wafers; an inspection unit 294 that executes processing necessary for inspecting wafers; and a storage unit 296 that It stores information (data, programs, etc.) used for processing in the setting unit 292 and the checking unit 294 . In addition, the control unit 290 includes a transceiver unit 298 that transmits information to the outside of the inspection device 2 and receives information input from the outside of the inspection device 2 .
雷射加工裝置300的控制單元312包含：處理部314，其執行被加工物的加工所需的處理；以及記憶部316，其記憶用於在處理部314中之處理之資訊（資料、程式等）。又，控制單元312包含收發部318，所述收發部318將資訊發送至雷射加工裝置300的外部，且接收從雷射加工裝置300的外部輸入之資訊。The control unit 312 of the laser processing device 300 includes: a processing unit 314, which executes the processing required for the processing of the workpiece; and a memory unit 316, which stores information (data, programs, etc.) used for processing in the processing unit 314. ). In addition, the control unit 312 includes a transceiver unit 318 that transmits information to the outside of the laser processing device 300 and receives information input from the outside of the laser processing device 300 .
檢查裝置2的收發部298與雷射加工裝置300的收發部318係透過網路而以有線或無線連接。因此，可在檢查裝置2與雷射加工裝置300之間進行資訊的收發。例如，記憶於檢查裝置2的記憶部296之資訊可從收發部298發送至雷射加工裝置300，記憶於雷射加工裝置300的記憶部316之資訊可從收發部318發送至檢查裝置2。The transceiver unit 298 of the inspection device 2 and the transceiver unit 318 of the laser processing device 300 are wired or wirelessly connected through a network. Therefore, information can be transmitted and received between the inspection device 2 and the laser processing device 300 . For example, the information stored in the memory unit 296 of the inspection device 2 can be sent from the transceiver unit 298 to the laser processing device 300 , and the information stored in the memory unit 316 of the laser processing device 300 can be sent from the transceiver unit 318 to the inspection device 2 .
接著，一邊參照圖19～圖21一邊說明晶片檢查的具體例。藉由使檢查裝置2與雷射加工裝置300協作，而實施評價條件設定步驟S10與評價步驟S20。Next, a specific example of wafer inspection will be described with reference to FIGS. 19 to 21 . The evaluation condition setting step S10 and the evaluation step S20 are performed by cooperating the inspection device 2 and the laser processing device 300 .
首先，以多個加工條件加工多個被加工物31（第一被加工物，參照圖20（A）），藉此將被加工物31分別分割成多個第一晶片（第一分割步驟S11）。在第一分割步驟S11中，準備多個被加工物31，分別藉由雷射加工裝置300而加工被加工物31。First, a plurality of workpieces 31 (first workpieces, see FIG. 20(A)) are processed under a plurality of processing conditions, thereby dividing the workpieces 31 into a plurality of first wafers (first dividing step S11 ). In the first dividing step S11 , a plurality of workpieces 31 are prepared, and the workpieces 31 are processed by the laser processing device 300 , respectively.
具體而言，首先，控制單元312的處理部314所包含之加工條件設定部314a設定用於雷射加工被加工物31之多個加工條件（雷射光束的照射條件等）。例如，藉由操作員而指定多個加工條件，加工條件設定部314a將被指定之多個加工條件寫入記憶部316所包含之加工條件記憶部316a。Specifically, first, the processing condition setting unit 314 a included in the processing unit 314 of the control unit 312 sets a plurality of processing conditions (irradiation conditions of laser beams, etc.) for laser processing the workpiece 31 . For example, when an operator designates a plurality of processing conditions, the processing condition setting unit 314 a writes the designated plurality of processing conditions into the processing condition storage unit 316 a included in the storage unit 316 .
接著，處理部314所包含之驅動控制部314b讀取被記憶於加工條件記憶部316a之第一加工條件，以利用第一加工條件將第一片被加工物31進行加工之方式，將控制信號輸出至雷射加工裝置300的各構成要素（雷射照射單元306等）。藉此，以第一加工條件將第一片被加工物31進行加工，在第一片被加工物31的內部沿著切割道33形成改質層（參照圖16）。Next, the drive control unit 314b included in the processing unit 314 reads the first processing condition stored in the processing condition storage unit 316a, and sends the control signal It outputs to each component of the laser processing apparatus 300 (laser irradiation unit 306 etc.). Thereby, the first workpiece 31 is processed under the first processing condition, and a modified layer is formed along the scribe lines 33 inside the first workpiece 31 (see FIG. 16 ).
接著，驅動控制部314b讀取被記憶於加工條件記憶部316a之第二加工條件，以利用第二加工條件將第二片被加工物31進行加工之方式，將控制信號輸出至雷射加工裝置300的各構成要素。藉此，以第二加工條件將第二片被加工物31進行加工，在第二片被加工物31的內部沿著切割道33形成改質層（參照圖16）。Next, the drive control unit 314b reads the second processing condition stored in the processing condition memory unit 316a, and outputs a control signal to the laser processing device in such a manner that the second workpiece 31 is processed using the second processing condition. 300 components. Thereby, the second workpiece 31 is processed under the second processing condition, and a modified layer is formed along the scribe lines 33 inside the second workpiece 31 (see FIG. 16 ).
藉由重複上述的處理，分別以不同的加工條件將多個被加工物31進行加工，而在多個被加工物31的內部形成改質層。之後，多個被加工物31被搬送至擴張裝置400（參照圖17（A）及圖17（B）），並藉由擴張裝置400對被加工物31施加外力。藉此，將多個被加工物31分別分割成多個第一晶片。By repeating the above-mentioned processing, the plurality of workpieces 31 are processed under different processing conditions, and modified layers are formed inside the plurality of workpieces 31 . Thereafter, the plurality of workpieces 31 are conveyed to the expansion device 400 (see FIG. 17(A) and FIG. 17(B) ), and an external force is applied to the workpieces 31 by the expansion device 400 . Thereby, the plurality of workpieces 31 are respectively divided into a plurality of first wafers.
此外，由雷射加工裝置300及擴張裝置400所進行之被加工物31的加工的詳細內容係與在前述的分割步驟S1（參照圖15）中之對於被加工物11的加工同樣。然後，已被分割成多個第一晶片之被加工物31分別被容納於卡匣8（參照圖2及圖3），並被搬送至檢查裝置2。又，用於被加工物31的加工之多個加工條件係從收發部318被發送至檢查裝置2。In addition, the details of the processing of the workpiece 31 by the laser processing device 300 and the expanding device 400 are the same as the processing of the workpiece 11 in the aforementioned dividing step S1 (see FIG. 15 ). Then, the workpieces 31 divided into a plurality of first wafers are accommodated in the cassettes 8 (see FIGS. 2 and 3 ), and are conveyed to the inspection device 2 . Also, a plurality of processing conditions for processing the workpiece 31 are transmitted from the transmitting and receiving unit 318 to the inspection device 2 .
接著，藉由拍攝第一晶片的側面，而取得顯示第一晶片的側面之第一側面影像（第一攝像步驟S12）。在第一攝像步驟S12中，將被加工物31從卡匣8（參照圖2及圖3）搬出，並配置於上推機構50的上方。又，藉由拾取機構70而從被加工物31拾取第一晶片，並將第一晶片搬送至側面觀察機構112。然後，藉由攝像單元116而拍攝第一晶片的側面，取得顯示第一晶片的側面之第一側面影像（參照圖18）。此外，由攝像單元116所進行之第一晶片的拍攝的詳細內容係與在前述的攝像步驟S2（參照圖15）中之晶片21的拍攝同樣。Next, by photographing the side surface of the first wafer, a first side image showing the side surface of the first wafer is obtained (first imaging step S12 ). In the first imaging step S12 , the workpiece 31 is carried out from the cassette 8 (see FIGS. 2 and 3 ) and placed above the push-up mechanism 50 . In addition, the first wafer is picked up from the workpiece 31 by the pick-up mechanism 70 , and the first wafer is transported to the side view mechanism 112 . Then, the side surface of the first wafer is photographed by the imaging unit 116 to obtain a first side image showing the side surface of the first wafer (see FIG. 18 ). In addition, the details of the imaging of the first wafer by the imaging unit 116 are the same as the imaging of the wafer 21 in the aforementioned imaging step S2 (see FIG. 15 ).
將藉由攝像單元116所取得之第一側面影像輸入控制單元290的設定部292所包含之影像登錄部292a。又，將從雷射加工裝置300發送之加工條件（在形成第一晶片時之被加工物31的加工條件）輸入影像登錄部292a。然後，影像登錄部292a將第一晶片的第一側面影像與用於形成該第一晶片之加工條件登錄於記憶部296所包含之影像記憶部296a。藉此，第一側面影像在已與加工條件相關聯之狀態下被記憶於影像記憶部296a。Input the first side image acquired by the camera unit 116 into the image registration unit 292 a included in the setting unit 292 of the control unit 290 . Furthermore, the processing conditions (processing conditions of the workpiece 31 when the first wafer is formed) transmitted from the laser processing apparatus 300 are input to the image registration unit 292a. Then, the image registration unit 292a registers the first side image of the first wafer and the processing conditions for forming the first wafer in the image memory unit 296a included in the memory unit 296 . Thereby, the 1st side image is memorized in the image memory part 296a in the state associated with the processing condition.
接著，測量第一晶片的抗撓強度（測量步驟S13）。在測量步驟S13中，已被攝像單元116拍攝側面之第一晶片被搬送至測量單元200（參照圖2及圖3），並藉由測量單元200而測量第一晶片的抗撓強度（參照圖12～圖14）。Next, the flexural strength of the first wafer is measured (measurement step S13 ). In the measurement step S13, the first wafer whose side has been photographed by the camera unit 116 is transported to the measurement unit 200 (see FIGS. 2 and 3 ), and the flexural strength of the first wafer is measured by the measurement unit 200 (see FIG. 12 ~ Figure 14).
將藉由測量單元200所測量之第一晶片的抗撓強度輸入控制單元290的設定部292所包含之強度登錄部292b。又，將從雷射加工裝置300發送之加工條件（在形成第一晶片時之被加工物31的加工條件）輸入強度登錄部292b。然後，強度登錄部292b將第一晶片的抗撓強度與用於形成該第一晶片之加工條件登錄於記憶部296所包含之強度記憶部296b。藉此，第一晶片的抗撓強度在已與加工條件相關聯之狀態下被記憶於強度記憶部296b。The flexural strength of the first wafer measured by the measuring unit 200 is input into the strength registration part 292 b included in the setting part 292 of the control unit 290 . Furthermore, the processing conditions (processing conditions of the workpiece 31 when the first wafer is formed) transmitted from the laser processing apparatus 300 are input to the intensity registration unit 292b. Then, the strength registration unit 292b registers the flexural strength of the first wafer and the processing conditions for forming the first wafer in the strength memory unit 296b included in the memory unit 296 . Thereby, the flexural strength of the first wafer is memorized in the strength memory portion 296b in a state related to the processing conditions.
分別對被容納於卡匣8（參照圖2及圖3）之多個被加工物31實施上述的第一攝像步驟S12及測量步驟S13。其結果，在影像記憶部296a中，針對每個加工條件記憶多個第一側面影像，在強度記憶部296b中，針對每個加工條件記憶多個第一晶片的抗撓強度。The above-described first imaging step S12 and measurement step S13 are performed on each of the plurality of workpieces 31 housed in the cassette 8 (see FIGS. 2 and 3 ). As a result, in the image storage unit 296a, a plurality of first side images are stored for each processing condition, and in the strength storage unit 296b, the flexural strengths of a plurality of first wafers are stored for each processing condition.
接著，將多個加工條件之中能形成抗撓強度最高之第一晶片的加工條件設定成分割加工條件（分割加工條件設定步驟S14）。在分割加工條件設定步驟S14中，根據被記憶於強度記憶部296b之第一晶片的抗撓強度，而設定在後續步驟中以雷射加工裝置300加工被加工物41（參照圖20（B））時的加工條件。Next, among the plurality of processing conditions, the processing condition capable of forming the first wafer with the highest flexural strength is set as the split processing condition (the split processing condition setting step S14 ). In the divisional processing condition setting step S14, based on the flexural strength of the first wafer memorized in the strength memory unit 296b, it is set to process the workpiece 41 with the laser processing device 300 in the subsequent steps (see FIG. 20(B) ) processing conditions.
具體而言，首先，控制單元290的設定部292所包含之分割加工條件設定部292c針對每個加工條件讀取被記憶於強度記憶部296b之多個第一晶片的抗撓強度。然後，強度記憶部296b將多個第一晶片的抗撓強度進行比較，特定出抗撓強度最高之第一晶片的抗撓強度。Specifically, first, the divided processing condition setting unit 292c included in the setting unit 292 of the control unit 290 reads the flexural strengths of the plurality of first wafers stored in the strength memory unit 296b for each processing condition. Then, the strength memory unit 296b compares the flexural strengths of the plurality of first wafers, and specifies the flexural strength of the first wafer with the highest flexural strength.
之後，強度記憶部296b選定被用於形成抗撓強度最高之第一晶片之加工條件作為分割加工條件，並將分割加工條件寫入記憶部296所包含之分割加工條件記憶部296c。藉此，用於形成高抗撓強度之晶片的分割加工條件被登錄於分割加工條件記憶部296c。Afterwards, the strength memory unit 296b selects the processing conditions used to form the first wafer with the highest flexural strength as the divisional processing conditions, and writes the divisional processing conditions into the divisional processing condition storage unit 296c included in the memory unit 296 . Thus, the dividing processing conditions for forming wafers with high flexural strength are registered in the dividing processing condition storage unit 296c.
接著，將顯示藉由以分割加工條件加工第一被加工物所形成之第一晶片的側面之第一側面影像設定成基準影像（基準影像設定步驟S15）。在基準影像設定步驟S15中，從被記憶於影像記憶部296a之多個第一側面影像中選定成為後述的閾值設定的基準之第一側面影像。Next, the first side image showing the side surface of the first wafer formed by processing the first workpiece under the split processing conditions is set as a reference image (reference image setting step S15 ). In the reference image setting step S15, a first silhouette image to be a reference for setting a threshold value described later is selected from among a plurality of first silhouette images stored in the image storage unit 296a.
具體而言，首先，控制單元290的設定部292所包含之基準影像設定部292d針對每個加工條件讀取被記憶於影像記憶部296a之多個第一側面影像。又，基準影像設定部292d讀取被記憶於分割加工條件記憶部296c之分割加工條件。Specifically, first, the reference image setting unit 292d included in the setting unit 292 of the control unit 290 reads a plurality of first side images stored in the image storage unit 296a for each processing condition. Furthermore, the reference image setting unit 292d reads the division processing conditions stored in the division processing condition storage unit 296c.
之後，基準影像設定部292d特定出多個第一側面影像中顯示藉由以分割加工條件加工被加工物31所形成之第一晶片（抗撓強度最高之第一晶片）的側面之第一側面影像。然後，基準影像設定部292d將所特定之第一側面影像作為基準影像而寫入記憶部296所包含之基準影像記憶部296d。藉此，高抗撓強度之晶片的第一側面影像作為基準影像而被登錄於基準影像記憶部296d。Afterwards, the reference image setting unit 292d specifies the first side surface showing the side surface of the first wafer (the first wafer with the highest flexural strength) formed by processing the workpiece 31 under the divided processing conditions among the plurality of first side images. image. Then, the reference image setting unit 292d writes the specified first side image as a reference image into the reference image storage unit 296d included in the storage unit 296 . Thereby, the first side image of the wafer with high flexural strength is registered in the reference image storage unit 296d as a reference image.
接著，設定從基準影像所提取之評價值的閾值（閾值設定步驟S16）。在閾值設定步驟S16中，從記憶於基準影像記憶部296d之基準影像提取成為晶片的評價基準之評價值，且設定該評價值的閾值。Next, the threshold value of the evaluation value extracted from the reference image is set (threshold value setting step S16 ). In the threshold value setting step S16, an evaluation value serving as an evaluation standard of the wafer is extracted from the reference image stored in the reference image storage unit 296d, and a threshold value of the evaluation value is set.
具體而言，首先，控制單元290的設定部292所包含之閾值設定部292e讀取被記憶於基準影像記憶部296d之基準影像。然後，基準影像記憶部296d藉由對基準影像施加影像處理，而提取與晶片的強度對應之預定值作為評價值。此外，評價值的具體例係如同前述。例如，提取與在第一側面影像中顯示改質層之區域中之階度對應之值、與第一側面影像所顯示之改質層的位置對應之值作為評價值（參照圖18）。Specifically, first, the threshold setting unit 292e included in the setting unit 292 of the control unit 290 reads the reference image stored in the reference image storage unit 296d. Then, the reference image storage unit 296d extracts a predetermined value corresponding to the intensity of the wafer as an evaluation value by applying image processing to the reference image. In addition, the specific example of an evaluation value is the same as above-mentioned. For example, a value corresponding to the gradation in the region where the modified layer is displayed in the first silhouette image, and a value corresponding to the position of the modified layer displayed in the first silhouette image are extracted as evaluation values (see FIG. 18 ).
接著，閾值設定部292e將定義所提取之評價值的容許範圍之閾值寫入記憶部296所包含之閾值記憶部296e。藉此，用於評價晶片之閾值被登錄於閾值記憶部296e。Next, the threshold setting unit 292 e writes the threshold defining the allowable range of the extracted evaluation value into the threshold storage unit 296 e included in the storage unit 296 . Thereby, the threshold value used for evaluating a wafer is registered in the threshold value storage part 296e.
例如，操作員一邊目視確認顯示於顯示單元280之基準影像，一邊選定預想晶片的強度被維持在一定以上之評價值的範圍，並輸入檢查裝置2。然後，閾值設定部292e將藉由操作員所選定之閾值寫入閾值記憶部296e。但是，閾值設定部292e亦可將依照預定的條件而自主地選定之閾值寫入閾值記憶部296e。For example, while visually confirming the reference image displayed on the display unit 280 , the operator selects a range of evaluation values in which the strength of the wafer is expected to be maintained at a certain level or higher, and inputs the value to the inspection device 2 . Then, the threshold setting unit 292e writes the threshold selected by the operator into the threshold storage unit 296e. However, the threshold value setting unit 292e may also write the threshold value independently selected according to predetermined conditions into the threshold value storage unit 296e.
藉由上述的評價條件設定步驟S10（第一分割步驟S11～閾值設定步驟S16）而特定出用於得到高抗撓強度之晶片的分割加工條件，且選定用於檢查晶片的狀態的閾值。然後，被記憶於分割加工條件記憶部296c之分割加工條件從收發部298被發送至雷射加工裝置300，並被記憶於雷射加工裝置300的記憶部316所包含之加工條件記憶部316a。Through the above-mentioned evaluation condition setting step S10 (first dividing step S11 to threshold value setting step S16 ), dividing processing conditions for obtaining wafers with high flexural strength are specified, and threshold values for inspecting the state of the wafers are selected. Then, the divisional processing conditions stored in the divisional processing condition storage unit 296 c are transmitted from the transceiver unit 298 to the laser processing device 300 and stored in the processing condition storage unit 316 a included in the storage unit 316 of the laser processing device 300 .
接著，藉由以分割加工條件加工被加工物41（第二被加工物，參照圖20（B）），而將被加工物41分割成多個第二晶片（第二分割步驟S21）。被加工物41係用於製造實際的產品之產品用被加工物。亦即，藉由分割被加工物41，而製造預計作為實際產品出貨的第二晶片。Next, the workpiece 41 is divided into a plurality of second wafers by processing the workpiece 41 (second workpiece, see FIG. 20(B) ) under the dividing processing conditions (second dividing step S21 ). The to-be-processed object 41 is a to-be-processed object for a product used for manufacturing an actual product. That is, by dividing the workpiece 41, the second wafer expected to be shipped as an actual product is produced.
在第二分割步驟S21中，藉由雷射加工裝置300而加工被加工物41，在被加工物41的內部沿著切割道43形成改質層（參照圖16）。此時，雷射加工裝置300的處理部314所包含之驅動控制部314b讀取從檢查裝置2被發送並被記憶於加工條件記憶部316a之分割加工條件。然後，驅動控制部314b係以利用分割加工條件加工被加工物41之方式，將控制信號輸出至雷射加工裝置300的各構成要素（雷射照射單元306等）。藉此，藉由以形成高強度之晶片的方式被選定之分割加工條件而加工被ㄅ加工物41。In the second dividing step S21 , the workpiece 41 is processed by the laser processing device 300 , and a modified layer is formed along the scribe line 43 inside the workpiece 41 (see FIG. 16 ). At this time, the drive control unit 314b included in the processing unit 314 of the laser processing device 300 reads the divided processing conditions transmitted from the inspection device 2 and stored in the processing condition storage unit 316a. Then, the drive control unit 314b outputs a control signal to each component of the laser processing apparatus 300 (the laser irradiation unit 306 and the like) so as to process the workpiece 41 using the divided processing conditions. Thereby, the workpiece 41 is processed by dividing processing conditions selected so as to form a high-strength wafer.
形成有改質層之被加工物41被搬送至擴張裝置400（參照圖17（A）及圖17（B）），並藉由擴張裝置400而對被加工物41施加外力。藉此，被加工物41被分割成多個第二晶片。The workpiece 41 on which the modified layer is formed is transported to the expansion device 400 (see FIG. 17(A) and FIG. 17(B) ), and an external force is applied to the workpiece 41 by the expansion device 400 . Thereby, the workpiece 41 is divided into a plurality of second wafers.
此外，由雷射加工裝置300及擴張裝置400所進行之被加工物31的加工的詳細內容係與在前述的分割步驟S1（參照圖15）中之對被加工物11的加工同樣。然後，已被分割成多個第二晶片之被加工物41被容納於卡匣8（參照圖2及圖3），並被搬送至檢查裝置2。In addition, the details of the processing of the workpiece 31 by the laser processing device 300 and the expanding device 400 are the same as the processing of the workpiece 11 in the aforementioned dividing step S1 (see FIG. 15 ). Then, the workpiece 41 divided into a plurality of second wafers is housed in the cassette 8 (see FIGS. 2 and 3 ), and is conveyed to the inspection device 2 .
接著，藉由拍攝第二晶片的側面，而取得顯示第二晶片的側面之第二側面影像（第二攝像步驟S22）。在第二攝像步驟S22中，藉由側面觀察機構112的攝像單元116而拍攝第二晶片的側面。藉此，取得顯示第二晶片的側面之第二側面影像（參照圖18）。此外，由攝像單元116所進行之第二晶片的拍攝的詳細內容係與在前述的攝像步驟S2（參照圖15）中之晶片21的拍攝同樣。Next, by photographing the side surface of the second wafer, a second side image showing the side surface of the second wafer is obtained (second imaging step S22 ). In the second imaging step S22 , the side surface of the second wafer is captured by the imaging unit 116 of the side observation mechanism 112 . Thereby, the second side image showing the side of the second wafer is obtained (see FIG. 18 ). In addition, the details of the imaging of the second wafer by the imaging unit 116 are the same as the imaging of the wafer 21 in the aforementioned imaging step S2 (see FIG. 15 ).
接著，藉由將從第二側面影像所提取之評價值與閾值進行比較，而檢查第二晶片的狀態（檢查步驟S23）。在檢查步驟S23中，從第二側面影像提取與第二晶片的強度對應之預定值作為評價值。然後，藉由判定評價值是否在預定的容許範圍內，而檢查第二晶片的狀態為正常或異常。此外，第二晶片的檢查的詳細內容係與在前述的檢查步驟S3（參照圖15）中之晶片21的檢查同樣。Next, the state of the second wafer is inspected by comparing the evaluation value extracted from the second silhouette image with a threshold value (inspection step S23 ). In the inspection step S23, a predetermined value corresponding to the intensity of the second wafer is extracted from the second side image as an evaluation value. Then, the state of the second wafer is checked as normal or abnormal by judging whether the evaluation value is within a predetermined allowable range. In addition, the details of the inspection of the second wafer are the same as the inspection of the wafer 21 in the aforementioned inspection step S3 (see FIG. 15 ).
具體而言，將藉由攝像單元116所取得之第二側面影像輸入控制單元290的檢查部294所包含之側面檢查部294a。然後，側面檢查部294a藉由對第二側面影像施加預定的影像處理，而從第二側面影像提取評價值。例如，與前述的檢查步驟S3（參照圖15）同樣地，提取與在第二側面影像中顯示改質層之區域中之階度對應之值、與第二側面影像所顯示之改質層的位置對應之值作為評價值。Specifically, the second side image acquired by the camera unit 116 is input into the side inspection part 294 a included in the inspection part 294 of the control unit 290 . Then, the side inspection unit 294a extracts an evaluation value from the second side image by applying predetermined image processing to the second side image. For example, similarly to the aforementioned inspection step S3 (see FIG. 15 ), the value corresponding to the gradation in the region where the modified layer is displayed in the second silhouette image, and the value corresponding to the modified layer displayed in the second silhouette image are extracted. The value corresponding to the position is used as the evaluation value.
又，側面檢查部294a讀取被記憶於閾值記憶部296e之閾值，並將評價值與閾值進行比較。藉此，判定評價值是否在預定容許範圍內。然後，在評價值在容許範圍內之情形中，判定第二晶片為正常，在評價值超出容許範圍之情形中，判定第二晶片為異常。Moreover, the side inspection part 294a reads the threshold value memorize|stored in the threshold value storage part 296e, and compares an evaluation value with a threshold value. Thereby, it is determined whether or not the evaluation value is within a predetermined allowable range. Then, if the evaluation value is within the allowable range, it is determined that the second wafer is normal, and when the evaluation value is outside the allowable range, it is determined that the second wafer is abnormal.
之後，檢查部294所包含之通知部294c將控制信號輸出至顯示單元280，並使與檢查結果對應之資訊顯示於顯示單元280。藉此，將第二晶片的檢查結果通知操作員（通知步驟S24）。Afterwards, the notification unit 294c included in the inspection unit 294 outputs a control signal to the display unit 280 and displays information corresponding to the inspection result on the display unit 280 . Thereby, the operator is notified of the inspection result of the second wafer (notification step S24 ).
此外，由檢查部294所進行之檢查的結果，在判定第二晶片為異常之情形中，通知部294c將控制信號輸出至顯示單元280，並顯示通知第二晶片的異常之錯誤資訊。藉此，例如將通知評價值為異常值之主旨之警告信息顯示於顯示單元280。In addition, when it is determined that the second wafer is abnormal as a result of the inspection by the inspection section 294, the notification section 294c outputs a control signal to the display unit 280, and displays error information notifying the abnormality of the second wafer. Thereby, for example, a warning message notifying that the evaluation value is an abnormal value is displayed on the display unit 280 .
又，檢查裝置2除了顯示單元280以外，亦可具備對操作員通報資訊之通報單元（通報部、通報裝置）。例如，設置顯示燈（警告燈）作為通報單元。在此情形中，通知部294c藉由使顯示燈亮燈或閃爍，而對操作員通知錯誤。又，亦可設置揚聲器作為通報單元。在此情形中，通知部294c藉由使揚聲器發出通知異常之聲音或語音，而通知操作員錯誤。In addition, the inspection device 2 may include a notification unit (notification unit, notification device) for notifying an operator of information in addition to the display unit 280 . For example, set a display lamp (warning lamp) as a notification unit. In this case, the notification unit 294c notifies the operator of the error by turning on or blinking the display lamp. In addition, a speaker may be provided as the notification unit. In this case, the notification section 294c notifies the operator of the error by causing the speaker to emit a sound or voice notifying the abnormality.
再者，由檢查部294所進行之檢查的結果，亦可從收發部298被發送至雷射加工裝置300。在此情形中，雷射加工裝置300亦可將第二晶片的檢查結果通知操作員。例如，與檢查裝置2同樣地，雷射加工裝置300具備顯示單元，控制單元312使通知第二晶片的異常之錯誤資訊顯示於顯示單元。藉此，可使通知評價值為異常值之主旨之警告信息、催促變更加工條件（雷射照射條件等）之指示信息等顯示於雷射加工裝置300的顯示單元。Furthermore, the result of the inspection performed by the inspection unit 294 may also be transmitted from the transmission and reception unit 298 to the laser processing device 300 . In this case, the laser processing device 300 may also notify the operator of the inspection result of the second wafer. For example, like the inspection apparatus 2, the laser processing apparatus 300 includes a display unit, and the control unit 312 displays error information notifying the abnormality of the second wafer on the display unit. Thereby, warning information notifying that the evaluation value is an abnormal value, instruction information prompting to change processing conditions (laser irradiation conditions, etc.), etc. can be displayed on the display unit of the laser processing apparatus 300 .
藉由上述的評價步驟S20（第二分割步驟S21～通知步驟S24）而檢查第二晶片。然後，評價值超出容許範圍的第二晶片係作為不良晶片而被從產品用的晶片排除。The second wafer is inspected by the above-mentioned evaluation step S20 (second dividing step S21 to notification step S24 ). Then, the second wafer whose evaluation value is out of the allowable range is excluded from the product wafer as a defective wafer.
此外，在檢查步驟S23中，除了第二側面影像的判定以外，亦可進行第二晶片的抗撓強度的測量。在此情形中，已被攝像單元116拍攝側面之第二晶片被搬送至測量單元200（參照圖2及圖3），並藉由測量單元200而測量第二晶片的抗撓強度（參照圖12～圖14）。In addition, in the inspection step S23, in addition to the determination of the second side image, the measurement of the flexural strength of the second wafer may also be performed. In this case, the second wafer whose side surface has been photographed by the imaging unit 116 is transferred to the measurement unit 200 (see FIGS. 2 and 3 ), and the flexural strength of the second wafer is measured by the measurement unit 200 (see FIG. 12 ~Figure 14).
將藉由測量單元200所測量之第二晶片的抗撓強度輸入控制單元290的檢查部294所包含之強度檢查部294b。然後，強度檢查部294b將所測量之第二晶片的抗撓強度與預先被記憶於記憶部296之閾值進行比較，藉此判定第二晶片的抗撓強度是否在預定的容許範圍內。The flexural strength of the second wafer measured by the measurement unit 200 is input to the strength inspection part 294 b included in the inspection part 294 of the control unit 290 . Then, the strength checking unit 294b compares the measured flexural strength of the second wafer with the threshold stored in the memory unit 296 to determine whether the flexural strength of the second wafer is within a predetermined allowable range.
之後，檢查部294所包含之通知部294c例如將控制信號輸出至顯示單元280，並使與由強度檢查部294b所進行之抗撓強度的檢查結果對應之資訊顯示於顯示單元280。藉此，將第二晶片的檢查結果通知操作員（通知步驟S24）。After that, the notification unit 294c included in the inspection unit 294 outputs, for example, a control signal to the display unit 280 and displays information corresponding to the result of the flexural strength inspection performed by the strength inspection unit 294b on the display unit 280 . Thereby, the operator is notified of the inspection result of the second wafer (notification step S24 ).
如同上述，在本實施方式之晶片的檢查方法中，根據從顯示晶片的側面之側面影像所提取之評價值而檢查晶片的狀態。藉此，更詳細地掌握在僅測量晶片的抗撓強度時不足以進行評價之晶片的狀態，而變得能對藉由分割被加工物而得之晶片進行適當的品質評價。As described above, in the wafer inspection method of this embodiment, the state of the wafer is inspected based on the evaluation value extracted from the side image showing the side surface of the wafer. Thereby, the state of the wafer, which is insufficient for evaluation only by measuring the flexural strength of the wafer, can be grasped in more detail, and it becomes possible to appropriately evaluate the quality of the wafer obtained by dividing the workpiece.
此外，在上述實施方式中，雖針對使用雷射加工裝置300分割被加工物之例子進行說明（參照圖16），但亦可使用其他加工裝置分割被加工物。例如，亦可藉由以切割裝置切割被加工物，而分割被加工物11。In addition, in the above-mentioned embodiment, an example of dividing the workpiece using the laser processing device 300 was described (see FIG. 16 ), but the workpiece may be divided using another processing device. For example, the workpiece 11 may be divided by cutting the workpiece with a cutting device.
切割裝置具備：卡盤台，其保持被加工物；以及切割單元，其切割被加工物。在切割單元中內建有主軸，且在主軸的前端部裝設環狀的切割刀片。以卡盤台保持被加工物，使切割刀片一邊旋轉一邊切入被加工物，藉此沿著切割道切割被加工物，而分割成多個晶片。The cutting device includes: a chuck table that holds a workpiece; and a cutting unit that cuts the workpiece. A main shaft is built in the cutting unit, and an annular cutting blade is installed on the front end of the main shaft. The workpiece is held by the chuck table, and the dicing blade is rotated while cutting into the workpiece, thereby cutting the workpiece along the dicing line and dividing it into a plurality of wafers.
若以切割刀片切割被加工物，則會在晶片的側面（被分割面、被加工面）殘留崩裂。此崩裂會對晶片的強度造成影響。因此，在檢查步驟S3（參照圖15）及檢查步驟S23（參照圖19）中，亦可從側面影像提取表示殘留於晶片之崩裂的長度、寬度、位置等之值以作為評價值，並用於評價晶片。If the workpiece is cut with a dicing blade, cracks will remain on the side surfaces of the wafer (segmented surface, processed surface). This cracking affects the strength of the wafer. Therefore, in inspection step S3 (see FIG. 15 ) and inspection step S23 (see FIG. 19 ), values indicating the length, width, position, etc. Evaluate wafers.
又，在上述實施方式中，雖針對藉由檢查裝置2所具備之攝像單元116而拍攝晶片的側面之情形進行說明，但雷射加工裝置300（參照圖16）、擴張裝置400（參照圖17（A）及圖17（B））亦可具備能拍攝晶片的側面之攝像單元。在此情形中，亦可使用雷射加工裝置300或擴張裝置400進行晶片的檢查。In addition, in the above-mentioned embodiment, although the case where the side surface of the wafer is imaged by the imaging unit 116 included in the inspection device 2 is described, the laser processing device 300 (refer to FIG. 16 ), the expansion device 400 (refer to FIG. 17 (A) and FIG. 17(B)) may include an imaging unit capable of imaging the side surface of the wafer. In this case, inspection of the wafer may also be performed using the laser processing device 300 or the expansion device 400 .
另外，上述實施方式之構造、方法等，只要在不脫離本發明的目的之範圍內，則可進行適當變更並實施。In addition, the structure, method, etc. of the above-mentioned embodiment can be changed suitably and implemented as long as it does not deviate from the objective of this invention.
11:被加工物 11a:正面（第一面） 11b:背面（第二面） 13:切割道（分割預定線） 15:元件 17:框架 17a:開口 19:膠膜 21:晶片 21a:正面（第一面） 21b:背面（第二面） 21c:側面 23:碎片 25:改質層（變質層） 31:被加工物（第一被加工物） 31a:正面（第一面） 31b:背面（第二面） 33:切割道（分割預定線） 35:元件 41:被加工物（第二被加工物） 41a:正面（第一面） 41b:背面（第二面） 43:切割道（分割預定線） 45:元件 2:檢查裝置（測量裝置、試驗裝置） 4:基台 4a:開口 4b:開口 6:卡匣載置台 8:卡匣 10:暫置機構 12:導軌 12a:第一支撐面 12b:第二支撐面 14:框架固定機構 16:框架支撐部 18:框架按壓部 18a:切口部 20:搬送機構 22a:第一握持部 22b:第二握持部 30:移動機構 32:X軸移動機構 34:X軸導軌 36:X軸滾珠螺桿 38:X軸脈衝馬達 40:移動板 42:Y軸移動機構 44:Y軸導軌 46:Y軸滾珠螺桿 48:Y軸脈衝馬達 50:上推機構 60:攝像單元 70:拾取機構 72:移動塊 74:臂部 74a:第一支撐部 74b:第二支撐部 74c:下表面 76:筒夾 76a:吸引面 80:筒夾移動機構 82:Y軸移動機構 84:Y軸導軌 86:Y軸滾珠螺桿 88:Y軸脈衝馬達 90:移動板 92:Z軸移動機構 94:Z軸導軌 96:Z軸滾珠螺桿 98:Z軸脈衝馬達 100:晶片觀察機構（晶片觀察單元） 102:下表面觀察機構 104:支撐基台 106:支撐構造 106a:保持面 108:攝像單元（下表面攝像單元） 110:防振構件 112:側面觀察機構 114:晶片支撐台 114a:支撐面 116:攝像單元（側面攝像單元） 120:外殼 122:攝像元件 124:干涉物鏡 126:光照射部 128:半反射鏡 130:壓電元件 132:電源 134:物鏡 136:玻璃板 138:參考鏡 140:半反射鏡 150:晶片反轉機構 150a:基底部 150b:連接部 150c:晶片保持部 150d:保持面 200:測量單元（測量機構） 204:下部容器（容納部） 204a:上表面 204b:開口 204c:下表面（底面） 204d:排出口 206:支撐單元 208:支撐台 208a:上表面 208b:支撐部 210:間隙 212:接觸構件 212a:接觸面 214:支撐台移動機構 216:支撐構造 218:導軌 220:滾珠螺桿 222:脈衝馬達 224:移動板 226:推壓單元 228:移動基台 230:第一支撐構件 232:負載量測器 234:第二支撐構件 236:夾持構件 236a:夾持面 238:壓頭 240:移動機構 242:支撐構造 244:導軌 246:滾珠螺桿 248:脈衝馬達 250:連接構件 250a:上部容器支撐部 252:上部容器（蓋） 252a:下表面 252b:開口 252c:上表面 252d:壓頭插入孔 252e:側壁 252f:噴嘴插入孔 254:氣體供給單元 256:噴嘴 256a:前端 258:閥 260:氣體供給源 262:排出單元 264:排出路徑 266:閥 268:吸引源 270:回收部 272:攝像單元 274:光源 280:顯示單元（顯示部、顯示裝置） 290:控制單元（控制部、控制裝置） 292:設定部 292a:影像登錄部 292b:強度登錄部 292c:分割加工條件設定部 292d:基準影像設定部 292e:閾值設定部 294:檢查部 294a:側面檢查部 294b:強度檢查部 294c:通知部 296:記憶部 296a:影像記憶部 296b:強度記憶部 296c:分割加工條件記憶部 296d:基準影像記憶部 296e:閾值記憶部 298:收發部 300:雷射加工裝置 302:卡盤台（保持台） 302a:保持面 304:夾具 306:雷射照射單元 308:雷射加工頭 310:雷射光束 312:控制單元（控制部、控制裝置） 314:處理部 314a:加工條件設定部 314b:驅動控制部 316:記憶部 316a:加工條件記憶部 318:收發部 400:擴張裝置 402:鼓輪 404:滾輪 406:支撐構件 408:工作台 408a:開口 410:夾具 500:側面影像 500a:區域 11: Processed object 11a: Front side (first side) 11b: Back (second side) 13: Cutting Road (Splitting Predetermined Line) 15: Element 17: frame 17a: opening 19: film 21: Wafer 21a: Front (first side) 21b: Back (second side) 21c: side 23: Shards 25: modified layer (modified layer) 31: Processed object (the first processed object) 31a: front (first side) 31b: Back (second side) 33: Cutting Road (Splitting Predetermined Line) 35: Element 41: Processed object (second processed object) 41a: front (first side) 41b: back (second side) 43: Cutting Road (Splitting Predetermined Line) 45: Element 2: Inspection device (measuring device, test device) 4: Abutment 4a: opening 4b: opening 6: Cassette loading table 8: Cassette 10: Temporary institutions 12: guide rail 12a: The first support surface 12b: Second supporting surface 14: Frame fixing mechanism 16: Frame support part 18:Frame pressing part 18a: Notch 20: Transport mechanism 22a: the first holding part 22b: the second holding part 30: Mobile Mechanism 32: X-axis moving mechanism 34: X-axis guide rail 36: X-axis ball screw 38: X-axis pulse motor 40: Mobile board 42: Y-axis moving mechanism 44: Y-axis guide rail 46: Y-axis ball screw 48:Y-axis pulse motor 50: Push up mechanism 60: camera unit 70: Pickup Mechanism 72: Move blocks 74: arm 74a: the first supporting part 74b: the second supporting part 74c: lower surface 76: collet 76a: Attraction surface 80: collet moving mechanism 82: Y-axis moving mechanism 84: Y-axis guide rail 86: Y-axis ball screw 88:Y-axis pulse motor 90: Mobile board 92: Z-axis moving mechanism 94: Z-axis guide rail 96: Z-axis ball screw 98: Z axis pulse motor 100: Wafer observation mechanism (wafer observation unit) 102: Lower surface observation mechanism 104: support abutment 106: Support structure 106a: holding surface 108: Camera unit (lower surface camera unit) 110: anti-vibration member 112: Side viewing mechanism 114: Wafer support table 114a: support surface 116: Camera unit (side camera unit) 120: shell 122: Camera element 124:Interference objective lens 126: Light irradiation department 128: half mirror 130: piezoelectric element 132: power supply 134: objective lens 136: glass plate 138: Reference mirror 140: half mirror 150: wafer inversion mechanism 150a: Base part 150b: connection part 150c: wafer holding part 150d: holding surface 200: Measuring unit (measuring mechanism) 204: Lower container (accommodation part) 204a: upper surface 204b: opening 204c: lower surface (bottom surface) 204d: outlet 206: support unit 208: support platform 208a: upper surface 208b: support part 210: Gap 212: Contact member 212a: contact surface 214: support platform moving mechanism 216: Support structure 218: guide rail 220: ball screw 222: Pulse motor 224: mobile board 226: push unit 228:Mobile base station 230: first support member 232: Load measuring device 234: second support member 236: Clamping member 236a: clamping surface 238: pressure head 240: mobile mechanism 242: Support structure 244: guide rail 246: ball screw 248: Pulse motor 250: Connecting components 250a: upper container support 252: Upper container (cover) 252a: lower surface 252b: opening 252c: upper surface 252d: Pressure head insertion hole 252e: side wall 252f: Nozzle insertion hole 254: gas supply unit 256:Nozzle 256a: front end 258: valve 260: Gas supply source 262: discharge unit 264: discharge path 266: valve 268: Source of Attraction 270: Recycling department 272: camera unit 274: light source 280: Display unit (display unit, display device) 290: Control unit (control unit, control device) 292: Setting department 292a: Image Registration Department 292b: strength registration part 292c: Split processing condition setting part 292d: Reference image setting part 292e: Threshold value setting part 294: Inspection Department 294a: Side inspection department 294b: Strength Inspection Department 294c: Notification Department 296: memory department 296a: Image memory department 296b: Strength memory department 296c: Divide processing condition memory unit 296d: Reference Image Memory Department 296e: Threshold memory unit 298: Sending and receiving department 300: laser processing device 302: chuck table (holding table) 302a: holding surface 304: fixture 306:Laser irradiation unit 308: Laser processing head 310:Laser Beam 312: Control unit (control unit, control device) 314: processing department 314a: Processing condition setting section 314b: Drive control department 316: memory department 316a: Processing condition memory unit 318: Sending and receiving department 400: expansion device 402: drum wheel 404:Roller 406: support member 408:Workbench 408a: opening 410: fixture 500:Silhouette 500a: area
圖1（A）係表示被加工物之立體圖，圖1（B）係表示已被分割成多個晶片之被加工物之立體圖。 圖2係表示檢查裝置之立體圖。 圖3係省略構成要素的一部分而表示檢查裝置之立體圖。 圖4係表示拾取機構之立體圖。 圖5（A）係表示下表面觀察機構之立體圖，圖5（B）係表示保持臂部的第二支撐部之下表面觀察機構之立體圖。 圖6（A）係表示拍攝晶片的下表面之攝像單元之前視圖，圖6（B）係表示拍攝晶片的側面之攝像單元之前視圖。 圖7（A）係表示下表面觀察機構的攝像單元之局部剖面前視圖，圖7（B）係表示干涉物鏡之示意圖。 圖8（A）係表示晶片反轉機構之立體圖，圖8（B）係表示保持晶片之晶片反轉機構之立體圖，圖8（C）係表示已使晶片反轉之晶片反轉機構之立體圖。 圖9係表示測量單元之立體圖。 圖10係表示支撐單元之立體圖。 圖11係表示推壓單元之立體圖。 圖12係表示晶片被支撐單元支撐之狀態的測量單元之剖面圖。 圖13係表示晶片已與支撐台的支撐部接觸之狀態的測量單元之剖面圖。 圖14係表示晶片已被破壞之狀態的測量單元之剖面圖。 圖15係表示第一晶片檢查方法之流程圖。 圖16係表示雷射加工裝置之局部剖面前視圖。 圖17（A）係表示擴張裝置之局部剖面前視圖，圖17（B）係表示擴張膠膜之擴張裝置之局部剖面前視圖。 圖18係表示晶片的側面影像之影像圖。 圖19係表示第二晶片檢查方法之流程圖。 圖20（A）係表示在評價條件設定步驟中所使用之第一被加工物之立體圖，圖20（B）係表示在評價步驟中所使用之第二被加工物之立體圖。 圖21係表示檢查裝置及雷射加工裝置之方塊圖。 FIG. 1(A) is a perspective view showing a workpiece, and FIG. 1(B) is a perspective view showing a workpiece divided into a plurality of wafers. Fig. 2 is a perspective view showing the inspection device. Fig. 3 is a perspective view showing the inspection device with some components omitted. Fig. 4 is a perspective view showing a pick-up mechanism. FIG. 5(A) is a perspective view showing the lower surface observation mechanism, and FIG. 5(B) is a perspective view showing the lower surface observation mechanism of the second support portion holding the arm. 6(A) is a front view of the imaging unit for imaging the lower surface of the wafer, and FIG. 6(B) is a front view of the imaging unit for imaging the side surface of the wafer. Fig. 7(A) is a partial sectional front view showing the imaging unit of the lower surface observation mechanism, and Fig. 7(B) is a schematic diagram showing the interference objective lens. Figure 8(A) is a perspective view of the wafer inversion mechanism, Figure 8(B) is a perspective view of the wafer inversion mechanism that holds the wafer, and Figure 8(C) is a perspective view of the wafer inversion mechanism that has reversed the wafer . Fig. 9 is a perspective view showing a measuring unit. Fig. 10 is a perspective view showing a supporting unit. Fig. 11 is a perspective view showing a pushing unit. Fig. 12 is a cross-sectional view of the measuring unit showing a state in which the wafer is supported by the supporting unit. Fig. 13 is a cross-sectional view of the measurement unit showing a state where the wafer is in contact with the supporting portion of the supporting table. Fig. 14 is a cross-sectional view of the measurement unit showing a state in which the wafer has been broken. Fig. 15 is a flowchart showing the first wafer inspection method. Fig. 16 is a partial sectional front view showing a laser processing device. Fig. 17(A) is a partial sectional front view of the expansion device, and Fig. 17(B) is a partial sectional front view of the expansion device for expanding the adhesive film. Fig. 18 is an image diagram showing a side image of a wafer. Fig. 19 is a flow chart showing the second wafer inspection method. FIG. 20(A) is a perspective view showing a first workpiece used in the evaluation condition setting step, and FIG. 20(B) is a perspective view showing a second workpiece used in the evaluation step. Fig. 21 is a block diagram showing an inspection device and a laser processing device.
11:被加工物 11: Processed object
11a:正面(第一面) 11a: Front (first side)
11b:背面(第二面) 11b: Back (second side)
13:切割道(分割預定線) 13: Cutting Road (Splitting Predetermined Line)
15:元件 15: Element
17:框架 17: frame
17a:開口 17a: opening
19:膠膜 19: film
21:晶片 21: Wafer
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