TW202330964A - 用以製造熱輔助磁記錄媒體之濺鍍靶 - Google Patents
用以製造熱輔助磁記錄媒體之濺鍍靶 Download PDFInfo
- Publication number
- TW202330964A TW202330964A TW111133848A TW111133848A TW202330964A TW 202330964 A TW202330964 A TW 202330964A TW 111133848 A TW111133848 A TW 111133848A TW 111133848 A TW111133848 A TW 111133848A TW 202330964 A TW202330964 A TW 202330964A
- Authority
- TW
- Taiwan
- Prior art keywords
- magnetic
- vol
- sputtering target
- nitride
- fept
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 178
- 238000005477 sputtering target Methods 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 150000004767 nitrides Chemical class 0.000 claims abstract description 66
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 14
- 229910052742 iron Inorganic materials 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- 230000005415 magnetization Effects 0.000 abstract description 31
- 239000013078 crystal Substances 0.000 description 46
- 239000000843 powder Substances 0.000 description 43
- 239000010409 thin film Substances 0.000 description 35
- 229910005335 FePt Inorganic materials 0.000 description 28
- 239000010408 film Substances 0.000 description 28
- 238000005245 sintering Methods 0.000 description 27
- 238000002844 melting Methods 0.000 description 24
- 230000008018 melting Effects 0.000 description 24
- 239000000956 alloy Substances 0.000 description 21
- 229910045601 alloy Inorganic materials 0.000 description 21
- 239000010410 layer Substances 0.000 description 17
- 239000011812 mixed powder Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 239000002245 particle Substances 0.000 description 13
- 239000000696 magnetic material Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000007731 hot pressing Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 229920000314 poly p-methyl styrene Polymers 0.000 description 1
- 206010063401 primary progressive multiple sclerosis Diseases 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021-146237 | 2021-09-08 | ||
JP2021146237 | 2021-09-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202330964A true TW202330964A (zh) | 2023-08-01 |
Family
ID=85507643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111133848A TW202330964A (zh) | 2021-09-08 | 2022-09-07 | 用以製造熱輔助磁記錄媒體之濺鍍靶 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPWO2023038016A1 (ja) |
TW (1) | TW202330964A (ja) |
WO (1) | WO2023038016A1 (ja) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6120261B2 (ja) * | 2012-10-11 | 2017-04-26 | 昭和電工株式会社 | 磁気記録媒体、磁気記録媒体の製造方法および磁気記録再生装置 |
JP6284125B2 (ja) * | 2014-10-24 | 2018-02-28 | 昭和電工株式会社 | 垂直磁気記録媒体、垂直磁気記録媒体の製造方法、垂直記録再生装置 |
JP6692724B2 (ja) * | 2016-09-02 | 2020-05-13 | Jx金属株式会社 | 非磁性材料分散型Fe−Pt系スパッタリングターゲット |
-
2022
- 2022-09-06 JP JP2023546941A patent/JPWO2023038016A1/ja active Pending
- 2022-09-06 WO PCT/JP2022/033348 patent/WO2023038016A1/ja active Application Filing
- 2022-09-07 TW TW111133848A patent/TW202330964A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2023038016A1 (ja) | 2023-03-16 |
JPWO2023038016A1 (ja) | 2023-03-16 |
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