TW202317806A - Substrate processing system and substrate processing method - Google Patents

Abstract

The disclosure provides a substrate processing system and method.The substrate processing system includes a preheating station, a PECVD processing station, a cooling station and a conveying device. The PECVD processing station includes an upper chamber body, a first electrode, a lower chamber body, a second electrode, a pedestal set on the lower chamber body, a tray made of conductive material, and the bottom end of the upper chamber body is provided with a radio frequency gasket; The PECVD processing station is used for PECVD deposition of films on preheated substrates. When the bottom susceptor of the PECVD processing station is heated, the susceptor moves upward until contacting the back face of the tray carrying the substrate, and pushes the edge of the front face portion of the tray into contact with the radio frequency gasket of the PECVD processing station, so that the tray forms a grounding loop between the radio frequency gasket and the upper chamber main body of the PECVD processing station; the present disclosure can improve the problem of non-uniformity of plasma deposition on the substrate.

Description

A substrate processing system and method thereof

The invention relates to the field of solar cells, in particular to a substrate processing system and method thereof.

Solar cells, also known as photovoltaic cells, are power generation technologies that use the photoelectric effect to directly convert solar radiation into electrical energy. They have the advantages of sufficient resources, cleanliness, safety, and long service life, and are considered to be one of the most promising renewable energy technologies. one.

At present, silicon heterojunction cells in solar cells have the advantages of low-temperature preparation, simple process steps, superior temperature coefficient, and good product stability, and are expected to become one of the mainstream technologies in the optoelectronic industry. The silicon heterojunction cell includes: a single crystal silicon substrate, after texturing the front and rear surfaces of the single crystal silicon substrate, then forming essential layers on the front and back of the single crystal silicon substrate, and N-type doped on the front essential layer The P-type doped layer on the impurity layer and the back essential layer, and then form the conductive transparent layer on the N-type doped layer and the conductive transparent layer on the P-type doped layer.

However, during the processing of the substrate, the substrate is carried on a tray, and then the tray carrying the substrate is transferred to a reaction chamber of a processing station for processing. The processing station has a base forming part of the electrode ground. When the susceptor is moved up and down, the ground connection may be through a different material and thus a different potential may be generated within the reaction chamber. Differences between ground potentials can cause arcing and also interfere with the uniformity of plasma deposition on the substrate.

Therefore, there is an urgent need for a substrate processing solution that can improve the problem of uneven plasma deposition on the substrate.

The invention provides a substrate processing system and method thereof, which are used to improve the unevenness of plasma deposition on the substrate.

In a first aspect, the present invention provides a substrate processing system, including: a preheating station, a PECVD processing station, a cooling station and a transfer device;

The conveying device is configured to sequentially convey the tray carrying the substrate in the preheating station, PECVD processing station, and cooling station;

The preheating station is used to preheat the substrate on the tray;

The PECVD processing station includes an upper chamber body, a first electrode disposed on the upper chamber body, a lower chamber body, a second electrode disposed on the lower chamber body, a base disposed on the lower chamber body, and a conductive The bottom end of the tray made of materials and the upper chamber body is provided with a radio frequency gasket; the PECVD processing station is used for PECVD deposition of a film layer on a preheated substrate, and when the bottom base of the PECVD processing station is heated , the base moves upward until it touches the back of the tray carrying the substrate, and pushes the edge of the front part of the tray into contact with the RF gasket of the PECVD processing station, so that the tray passes through the RF gasket and the upper chamber body of the PECVD processing station. ground loop;

The cooling station is used for cooling the deposited substrate.

The beneficial effect of the substrate processing system provided by the present invention is that by setting the RF gasket at the bottom of the upper chamber body of the PECVD processing station, the tray forms a ground loop through the RF gasket and the upper chamber body. This setup enables good peripheral grounding to ensure a good return path for RF, makes the ground potentials in the sealed cavity the same, so no arcing occurs, and eliminates the impact of different ground potentials on the uniformity of the plasma above the substrate.

Optionally, the system further includes a loading lock and an unloading lock; the loading lock is used for pumping the air pressure in the chamber to below atmospheric pressure before the preheating station preheats the substrate; The unloading lock is used to restore the air pressure in the chamber to atmospheric pressure.

Optionally, the system further comprises a pallet loading station and a pallet unloading station;

the tray loading station for loading substrates from substrate cassettes onto trays;

The tray unloading station is used for unloading substrates from trays into substrate boxes.

Optionally, the system further includes a memory; the memory configured to accommodate a substrate cassette carrying a plurality of substrates.

Optionally, when the base is not heated, the tray is located in the cavity formed by the upper chamber body and the lower chamber body, the tray is separated from the upper chamber body, and the tray The dimensions are larger than the dimensions of the base.

Optionally, the upper chamber body of the PECVD processing station is provided with a shower head, which is used to purge the outer side of the contact point between the upper chamber body and the tray when the edge of the front part of the tray is in contact with the RF gasket Non-reactive gas, forms a gas barrier.

Optionally, when the edge of the front part of the tray is in contact with the radio frequency gasket, a closed cavity is formed between the first electrode, the tray, the upper chamber body, and the second electrode.

Optionally, the distance between the first electrode and the second electrode ranges from 5mm to 30mm, the process chamber design can limit the plasma to provide repeatable plasma conditions and by using a distance closer to 10mm The electrode spacing increases the deposition rate.

Optionally, the first electrode is provided with a gas shower head for blowing plasma to the substrate on the tray.

Optionally, the first electrode can move up and down for adjusting the gap between the first electrode and the tray.

In a second aspect, the present invention provides a substrate processing method, comprising: the following steps:

providing a plurality of trays, and the substrate is configured to be loaded backside up onto the first tray;

loading the first tray carrying the substrates into the load lock and being pumped to a low pressure;

Transporting the first tray to the preheating station under vacuum, preheating the first tray carrying the substrate, and transporting the preheated first tray and the substrate to the PECVD processing station;

When the pedestal of the PECVD processing station is heated, the pedestal moves upward until it touches the back of the first tray, and pushes the edge of the front part of the first tray into contact with the radio frequency gasket, so that the first tray contacts the upper surface through the radio frequency gasket. A ground loop is formed between the chamber main bodies, and the gas shower head on the first electrode blows the plasma to the substrate on the first tray, forming a first I layer on the back surface of the substrate;

transporting the first tray carrying the substrates into an unload lock for release to atmosphere;

Flipping the substrate to face up and loading it onto a second tray;

loading the second tray carrying the substrate into the load lock and being pumped to a low pressure;

The second tray is transported to the preheating station under vacuum, the second tray carrying the substrate is preheated, the preheated second tray and the substrate are transported to the PECVD processing station, and the second tray is formed on the back side of the substrate. I layer;

forming an N layer on the second I layer;

conveying the second tray carrying the substrates into the unload lock for release to the atmosphere;

Invert the substrate and load it backside up onto the third tray;

A third tray carrying substrates is loaded into the load lock and pumped to low pressure;

The third tray is transported to the preheating station under vacuum, the third tray carrying the substrate is preheated, the preheated third tray and the substrate are transported to the PECVD processing station, and the first I Layer P is formed on the layer;

The third tray carrying the substrates is transported into the unload lock for release to atmosphere and the substrates are unloaded into the substrate cassette.

In terms of third parties, the present invention also provides another substrate processing method, comprising: the following steps:

providing a plurality of trays, and the substrate is configured to be loaded backside up onto the first tray;

loading the first tray carrying the substrates into the load lock and being pumped to a low pressure;

Transporting the first tray to the preheating station under vacuum, preheating the first tray carrying the substrate, and transporting the preheated first tray and the substrate to the PECVD processing station;

When the pedestal of the PECVD processing station is heated, the pedestal moves upward until it touches the back of the first tray, and pushes the edge of the front part of the first tray into contact with the radio frequency gasket, so that the first tray contacts the upper surface through the radio frequency gasket. A ground loop is formed between the chamber main bodies, and the gas shower head on the first electrode blows the plasma to the substrate on the first tray, forming a first I layer on the back surface of the substrate;

transporting the first tray carrying the substrates into an unload lock for release to the atmosphere;

transporting the first tray to a PECVD processing station under vacuum to form a Pth layer on the first I layer on the backside of the substrate;

transporting the first tray carrying the substrates into an unload lock for release to the atmosphere;

Flipping the substrate to face up and loading it onto a second tray;

loading the second tray carrying the substrate into the load lock and being pumped to a low pressure;

Transporting the second tray to the preheating station under vacuum, preheating the second tray, and transporting the preheated second tray to the PECVD processing station;

When the pedestal of the PECVD processing station is heated, the pedestal moves upward until it touches the back of the second tray, and pushes the edge of the front part of the second tray into contact with the radio frequency gasket, so that the second tray touches the upper surface through the radio frequency gasket. A ground loop is formed between the chamber main bodies, and the gas shower head on the first electrode blows the plasma to the substrate on the second tray to form a second I layer on the front surface of the substrate;

transporting the second tray under vacuum to a PECVD processing station to form an Nth layer on the second I layer on the front side of the substrate;

The second tray carrying the substrates is conveyed into the unload lock for release to atmosphere and the substrates are unloaded into the substrate cassette.

Other features will be described in the detailed description.

The technical solutions in the embodiments of the present invention will be described below with reference to the drawings in the embodiments of the present invention. Wherein, in the description of the embodiments of the present invention, the terms used in the following embodiments are only for the purpose of describing specific embodiments, and are not intended to limit the application. As used in the specification of this application and the appended claims, the singular expressions "a", "said", "above", "the" and "this" are intended to also include, for example, "a or more" unless the context clearly indicates otherwise. It should also be understood that in the following embodiments of the present application, "at least one" and "one or more" refer to one or more than two (including two). The term "and/or" is used to describe the association relationship between associated objects, which means that there can be three kinds of relationships; for example, A and/or B can mean: A exists alone, A and B exist simultaneously, and B exists alone, where A and B may be singular or plural. The character "/" generally indicates that the contextual objects are an "or" relationship.

Various exemplary embodiments and details, where relevant, are described below with reference to the accompanying drawings. It should be noted that the figures may or may not be drawn to scale and that elements of similar structure or function are represented by the same reference numerals throughout the figures. It should also be noted that the figures are only intended to facilitate the description of the embodiments. They are not intended as an exhaustive description of the invention or as a limitation on the scope of the invention. In addition, the illustrated embodiments do not necessarily have all the aspects or advantages presented. An aspect or advantage described in connection with a particular embodiment is not necessarily limited to that embodiment and can be practiced in any other embodiment even if not so shown, or if not explicitly described.

In order to make the above objects, features and beneficial effects of the present invention more obvious, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

Aiming at the problems existing in the prior art, an embodiment of the present invention provides a plasma enhanced chemical vapor deposition (PECVD) processing station, as shown in FIG. 1 , the PECVD processing station has a unique process chamber design , that is, the PECVD processing station includes an upper chamber body 5, a first electrode 6 arranged on the upper chamber body 5, a lower chamber body 9, a second electrode 7 arranged on the lower chamber body 9, a second electrode 7 arranged on the lower chamber body The base 2 of 9, the tray 1 made of conductive material, and the bottom end of the upper chamber body 5 are provided with a radio frequency gasket 8. The first electrode 6 is provided with a gas shower head for blowing plasma to the substrate on the tray. A shower head 4 is provided inside the lower chamber body 9 , and the shower head 4 is used for purging non-reactive gas to the back of the base 2 .

Before the susceptor is heated, in (a) of FIG. 1 , the tray is located in the cavity formed by the upper chamber body 5 and the lower chamber body 9 , and the tray 1 and the upper chamber The chamber body 5 is separated, and the tray 1 is used to carry the substrate, and the size of the tray 1 is larger than that of the base 2; this setting can ensure that the plasma will not leak to the base 2, thereby preventing the substrate on the back from being polluted .

When the base 2 is heated, as shown in (b) of FIG. 1 , the base 2 is heated and moves upward until it touches the back of the tray 1, and pushes the edge of the front part of the tray 1 into contact with the RF gasket 8, so that the The tray 1 forms a ground loop through the RF gasket 8 and the upper chamber main body 5 . This setup enables good peripheral grounding to ensure a good return path for RF, makes the ground potentials in the sealed cavity the same, so no arcing occurs, and eliminates the impact of different ground potentials on the uniformity of the plasma above the substrate.

In addition, when the edge of the front part of the tray 1 is in contact with the RF gasket 8 , a closed cavity is formed between the first electrode 6 , the tray 1 and the upper chamber body 5 . Optionally, the airtight cavity is a vacuum environment. On the one hand, the plasma is confined to the tray area to maximize the effect of plasma deposition or etching on the substrate surface; on the other hand, the vacuum environment helps to reduce impurities in the air from mixing into the sealed cavity, ensuring the plasma reaction effect .

In addition, when the edge of the front part of the tray 1 is in contact with the RF gasket 8 , a closed cavity is formed between the first electrode 6 , the tray 1 and the upper chamber body 5 . Optionally, the airtight cavity is a vacuum environment. On the one hand, the plasma is confined to the tray area to maximize the effect of plasma deposition or etching on the substrate surface; on the other hand, the vacuum environment helps to reduce impurities in the air from mixing into the sealed cavity, ensuring the plasma reaction effect . The first electrode can move up and down to adjust the gap between the first electrode and the tray. The process chamber design can limit the distance between the first electrode and the second electrode to range from 5 mm to 30 mm, In addition, the plasma can be confined for reuse, which can increase the deposition rate.

Based on the above PECVD processing station, the present invention provides a substrate processing system, which includes a preheating station, a PECVD processing station, a cooling station and a transfer device. Wherein, the conveying device is configured to sequentially convey the tray carrying the substrate in the preheating station, the PECVD processing station, and the cooling station; the preheating station is used for preheating the substrate on the tray.

The PECVD processing station includes: an upper chamber body, a first electrode disposed on the upper chamber body, a lower chamber body, a second electrode disposed on the lower chamber body, a base disposed on the lower chamber body, The bottom end of the tray made of conductive material and the upper chamber body is provided with a radio frequency gasket; the PECVD processing station is used for PECVD deposition of the film layer on the preheated substrate, and the bottom base of the PECVD processing station is heated , the pedestal moves upward until it contacts the back of the tray carrying the substrate, and pushes the edge of the front part of the tray into contact with the RF gasket of the PECVD processing station, so that the tray passes between the RF gasket and the upper chamber body of the PECVD processing station form a ground loop;

The cooling station is used for cooling the deposited substrate.

Optionally, the system further includes a loading lock and an unloading lock; the loading lock is used to suck the air pressure in the chamber to below atmospheric pressure before the preheating station preheats the substrate; The unloading lock is used to restore the air pressure in the chamber to atmospheric pressure.

Optionally, the system further includes a tray loading station and a tray unloading station; the tray loading station is used to load the substrates from the substrate cassettes onto the trays; the tray unloading station is used to unload the substrates from the trays to the substrate cassettes middle.

Optionally, the system further includes a memory; the memory configured to accommodate a substrate cassette carrying a plurality of substrates.

As shown in Figure 2A, the system can be composed of two subsystems to complete the deposition of the IP/IN layer, or as shown in Figure 2B, the substrate processing system can be composed of 3 subsystems to complete the I, I, N , Deposition of P layer. 2A and 2B, the description of the system components is as follows: 10 represents a substrate processing system assembled from 2 or more subsystems; 11 represents a subsystem 1 for plating I layer deposition on the back; 12 represents the front side Subsystem 2 for plating I and N layer deposition; 13 represents subsystem 3 for plating P layer deposition on the back; 14 represents subsystem 1 for plating I and P layer deposition on the back; 101 represents the substrate box storage station, with 102 represents the transfer station-loading station, which is used to load the substrate onto the tray, and the tray is looped from the transfer station-loading station; 103 represents the tray preparation station; 104 load lock chamber (load lock chamber ), used for load locking; 105 represents the preheating chamber, which is used to heat the substrate to 200-250 degrees Celsius; 106 represents the PECVD processing station, which is used for the deposition of the intrinsic layer; 107 represents the PECVD processing station, which is used for the pre-doped layer (eg N layer) deposition. 108 represents the Unload lock chamber (Unload lock chamber), which is used for unloading locks; 109 represents the Unload station (Unload station); 110 represents the transfer station, which is used to pick up the substrate and the tray is lowered and transferred to the lower track via the system to return to the substrate loading; 111 represents a flipping station, which is used to flip the substrate at the flipping station after picking up the substrate from the transfer station, and place it on a pallet forwarded by the next subsystem; 112 represents a rolling station, used to move the pallet to the end of the track; 113 Represents the first horizontal rolling station; 114 represents the second lateral rolling station, which is used to collect the tray and move laterally, wherein, the horizontal rolling station represented by 113 can realize turning; 115 PECVD processing station, used for post-doping layer (such as P layer); 116 denotes a substrate cassette stocker for storing empty cassettes to receive substrates from an unloader; 117 denotes a substrate cassette stocker for transferring finished substrates back to a substrate cassette or another tray for the next process Step; 118 represents the maintenance walkway, used for cabin maintenance; 119 represents the vacuum pump, used to reduce the processing pressure to the sub-atmospheric level.

In this example, the treatment of the I-layer first has the advantage of reducing the cooling time required to passivate the bare silicon surface after texturing; alternatively, the substrate can have double-sided deposition on the I-layer, using a tray with openings on both sides of the substrate , and then the N layer and the P layer are deposited on the I layer on the front side and the back side of the substrate respectively by two independent systems.

Optionally, the system can also incorporate a texturing station for texturing the front and rear surfaces of the substrate so that Form the texture. The material of the front intrinsic layer and the back intrinsic layer includes amorphous silicon (A-SI:H). In some cases, each of the pre-intrinsic and post-intrinsic layers may comprise one or more layers of amorphous silicon: the material of the pre-doped layer may be amorphous silicon or stacked layers of microcrystalline silicon, or both. Doped with N-type ions. The material of the post-doping layer is amorphous silicon doped with P-type ions. In some cases, the pre-doped intrinsic layer may be a phosphorus-doped intrinsic layer and the post-doped intrinsic layer may be a boron-doped intrinsic layer. In this case, phosphorus may be used to form the N layer, and boron may be used to form the P layer. The material of the front conductive layer and the rear conductive layer is transparent conductive oxide. In other embodiments, other materials may be used for the different layers.

In some cases, the N and P layers can be made of microcrystalline silicon. In addition, in some embodiments, any one of the I layer, the N layer, and the P layer, any multiple layers or all layers can be composed of multiple deposition layers of similar materials deposited under different processing conditions to improve the conversion efficiency of solar cells .

The transfer means in the system described above may include rails, guides, transfer surfaces, etc. extending along one or more transfer chambers providing a vacuum environment to transfer the trays to different processing stations for processing.

In some embodiments, any of the processing stations described herein may include mechanical components, electrical components, electromechanical components, or any combination thereof configured to provide the features described herein. Additionally, in some embodiments, any of the processing stations described herein may optionally include control elements, feedback elements (eg, one or more sensors), or any other mechanical and/or electrical components.

Based on the substrate processing system shown in FIG. 2B, an embodiment of the present invention also provides a substrate processing method, as shown in FIG. 3, including the following steps:

S301 , providing a plurality of trays, and the substrate is configured to be loaded on the first tray with its back side up.

That is, at the start of deposition, the substrates are loaded backside up onto the first tray.

S302 , loading the first tray carrying the substrate into the loading lock, and being sucked to a low pressure.

S303, transporting the first tray to the preheating station under vacuum, preheating the first tray carrying the substrate, and transporting the preheated first tray and the substrate to the PECVD processing station.

That is, the first tray is conveyed into the preheating chamber under vacuum to be preheated to 200~250 degrees Celsius.

S304. When the pedestal of the PECVD processing station is heated, the pedestal moves upward until it touches the back of the first tray, and pushes the edge of the front part of the first tray to contact the radio frequency gasket, so that the first tray passes through the radio frequency gasket A ground loop is formed between the main body of the upper chamber, and the gas shower head on the first electrode blows the plasma to the substrate on the first tray to form the first I layer on the back surface of the substrate.

That is, the first tray is conveyed into a PECVD chamber under vacuum to deposit an intrinsic layer on the backside of the substrate at 200~250 degrees Celsius.

S305, transporting the first tray carrying the substrate to the unloading lock, so as to be released into the atmosphere.

S306, turning over the substrate to face up and loading it on the second tray.

That is, the substrate is turned over and placed face-up on a new second tray.

S307, loading the second tray carrying the substrate into the loading lock, and being sucked to a low pressure.

At this time, the first tray can be reset for repeated use.

S308, transporting the second tray to the preheating station under vacuum, preheating the second tray carrying the substrate, transporting the preheated second tray and the substrate to the PECVD processing station, forming a Second I layer.

That is to say, the second tray is conveyed into the preheating chamber under vacuum to be preheated to 200~250 degrees Celsius. The second tray is conveyed under vacuum into a PECVD processing station to deposit an intrinsic layer on the front side of the substrate at 200-250 degrees Celsius.

S309, forming an N layer on the second I layer.

That is, the second tray is conveyed into the PECVD processing station under vacuum to deposit an N-type doped layer on the front side of the substrate at 200~250 degrees Celsius.

S310, transporting the second tray carrying the substrate to the unloading lock, so as to be released into the atmosphere.

At this time, the second tray can be reset for repeated use.

S311 , turning over the substrate so that the back side faces up and loading it on the third tray.

S312 , loading the third tray carrying the substrate into the loading lock, and being sucked to a low pressure.

S313, transporting the third tray to the preheating station under vacuum, preheating the third tray carrying the substrate, transporting the preheated third tray and the substrate to the PECVD processing station, and placing the third tray on the back of the substrate A Pth layer is formed on the I layer.

That is, the third tray is conveyed into the PECVD processing station under vacuum to deposit a P-type doped layer on the backside of the substrate at 200~250 degrees Celsius.

S314, transporting the third tray carrying the substrates to the unloading lock for release to the atmosphere, and unloading the substrates into the substrate box.

At this point the deposition is complete and the third tray can be reset for reuse.

Based on the substrate processing system shown in FIG. 2A, an embodiment of the present invention also provides a substrate processing method, as shown in FIG. 4, including the following steps:

S401 , providing a plurality of trays, and the substrate is configured to be loaded on the first tray with its back side up.

That is, at the start of deposition, the substrates are loaded backside up onto the first tray.

S402, loading the first tray carrying the substrate into the loading lock, and being sucked to a low pressure.

S403, transporting the first tray to the preheating station under vacuum, preheating the first tray carrying the substrate, and transporting the preheated first tray and the substrate to the PECVD processing station.

That is, the first tray is conveyed into the preheating chamber under vacuum to be preheated to 200~250 degrees Celsius.

S404. When the pedestal of the PECVD processing station is heated, the pedestal moves upward until it touches the back of the first tray, and pushes the edge of the front part of the first tray to contact the radio frequency gasket, so that the first tray passes through the radio frequency gasket A ground loop is formed between the main body of the upper chamber, and the gas shower head on the first electrode blows the plasma to the substrate on the first tray to form the first I layer on the back surface of the substrate.

S405, transporting the first tray carrying the substrate to the unloading lock, so as to be released into the atmosphere.

S406, transporting the first tray to the PECVD processing station under vacuum, forming a Pth layer on the first I layer on the backside of the substrate.

S407, transporting the first tray carrying the substrate to the unloading lock, so as to be released into the atmosphere.

S408, turning over the substrate to face up and loading it on the second tray.

S409, loading the second tray carrying the substrate into the loading lock, and being sucked to a low pressure.

S410, transporting the second tray to the preheating station under vacuum, preheating the tray, and transporting the preheated second tray to the PECVD processing station.

S411. When the pedestal of the PECVD processing station is heated, the pedestal moves upward until it touches the back of the second tray, and pushes the edge of the front part of the tray into contact with the radio frequency gasket, so that the second tray touches the upper surface through the radio frequency gasket. A ground loop is formed between the chamber main bodies, and the gas shower head on the first electrode blows the plasma to the substrate on the second tray to form a second I layer on the front surface of the substrate.

S412, transporting the second tray to the PECVD processing station under vacuum, forming an Nth layer on the second I layer on the front side of the substrate.

S413, transporting the second tray carrying the substrates to the unloading lock for release into the atmosphere, and unloading the substrates into the substrate box.

The use of the terms "first", "second", "third" and "fourth" do not imply any particular order, but are included to identify individual elements. Furthermore, the use of the terms first, second, etc. does not denote any order or importance, but rather the terms first, second, etc. are used to distinguish one element from another. Note that the first and second terms are used here and elsewhere for labeling purposes and are not intended to imply any particular spatial or temporal ordering. Furthermore, the reference to a first element does not imply the presence of a second element and vice versa.

Although the present invention is disclosed above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be based on the scope defined by the claims.

1: tray 2: base 4: Nozzle 5: Upper chamber body 6: The first electrode 7: Second electrode 8: RF Gasket 9: Lower chamber body 10: Substrate processing system 11: Subsystem 1 for layer I deposition on the backside 12: Subsystem 2 for I and N layer deposition on the front side 13: Subsystem 3 for P layer deposition on the backside 14: Subsystem 1 for plating I and P layer deposition on the back side 101: Substrate box storage station 102: transfer station - loading station 103: Pallet preparation station 104:Load lock chamber 105: Preheating room 106:PECVD processing station 107:PECVD processing station 108: Unload the lock room 109: unloading station 110: transfer station 111: Flip station 112: Rolling station 113: First horizontal scroll station 114: Second horizontal scrolling station 115:PECVD processing station 116: substrate box stocker 117: substrate box storage 118: Overhaul walkway 119: vacuum pump

In order to make the above and other objects, features, advantages and embodiments of the present invention more comprehensible, the accompanying drawings are described as follows: Fig. 1 shows a kind of PECVD processing station provided by the present invention; FIG. 2A shows a substrate processing system including the IPIN processing flow of the PECVD processing station in FIG. 1 provided by the present invention; FIG. 2B shows a substrate processing system including the IINP processing flow of the PECVD processing station in FIG. 1 provided by the present invention; FIG. 3 shows a schematic flow chart of a substrate processing method based on the substrate processing system shown in FIG. 2B; FIG. 4 shows a schematic flowchart of a substrate processing method based on the substrate processing system shown in FIG. 2A .

none

10: Substrate processing system

11: Subsystem 1 for layer I deposition on the backside

12: Subsystem 2 for I and N layer deposition on the front side

13: Subsystem 3 for P layer deposition on the backside

101: Substrate box storage station

102: transfer station - loading station

103: Pallet preparation station

104:Load lock chamber

105: Preheating room

106: PECVD processing station

107: PECVD processing station

108: Unload the lock room

109: unloading station

110: transfer station

111: Flip station

112: Rolling station

113: First horizontal scroll station

114: Second horizontal scrolling station

115: PECVD processing station

116: substrate box stocker

117: substrate box storage

118: Overhaul walkway

119: vacuum pump

Claims (12)

A substrate processing system, comprising: a preheating station, a PECVD processing station, a cooling station and a transfer device; the transport device is configured to sequentially transport the trays carrying the substrates in the preheating station, the PECVD processing station and the cooling station; The preheating station is used to preheat the substrate on the tray; The PECVD processing station includes: an upper chamber body, a first electrode disposed on the upper chamber body, a lower chamber body, a second electrode disposed on the lower chamber body, a base disposed on the lower chamber body, The tray made of conductive material and the bottom of the upper chamber main body are provided with radio frequency gaskets; the PECVD processing station is used to perform PECVD deposition of the film layer on the preheated substrate, when the bottom base of the PECVD processing station When heated, the pedestal moves upward until it touches the back of the tray carrying the substrate, and pushes the edge of the front part of the tray into contact with the RF gasket of the PECVD processing station, so that the tray passes through the RF gasket and the upper chamber body of the PECVD processing station form a ground loop between The cooling station is used for cooling the deposited substrate. The substrate processing system according to claim 1, further comprising a loading lock and an unloading lock; The load lock is used to pump the air pressure in the chamber to sub-atmospheric pressure before the preheating station preheats the substrate; The unloading lock is used to restore the air pressure in the chamber to atmospheric pressure. The substrate processing system according to claim 1, further comprising a tray loading station and a tray unloading station; the tray loading station for loading substrates from substrate cassettes onto trays; The tray unloading station is used for unloading substrates from trays into substrate boxes. The substrate processing system according to claim 1, further comprising a memory; The memory is configured to accommodate a substrate cassette carrying a plurality of substrates. The substrate processing system according to claim 1, wherein when the susceptor is not heated, the tray is located in the cavity formed by the upper chamber body and the lower chamber body, and the tray and the upper chamber body The chamber body is separated, and the size of the tray is larger than that of the base. The substrate processing system according to claim 1, wherein the upper chamber body of the PECVD processing station is provided with a shower head, and the shower head is used to push upward the chamber body and the tray when the edge of the front part of the tray is in contact with the RF gasket. A non-reactive gas is purged outside the contact points between them, forming a gas barrier. The substrate processing system according to any one of claims 1 to 6, wherein when the edge of the front part of the tray is in contact with the radio frequency gasket, a closed cavity is formed between the first electrode, the tray, the upper chamber body, and the second electrode body. The substrate processing system according to any one of claims 1 to 6, wherein the distance between the first electrode and the second electrode ranges from 5 mm to 30 mm. The substrate processing system according to any one of claims 1 to 6, wherein the first electrode is provided with a gas shower for blowing plasma to the substrate on the tray. The substrate processing system according to any one of claims 1 to 6, wherein the first electrode can move up and down for adjusting the gap between the first electrode and the tray. A substrate processing method, comprising the steps of: providing a plurality of trays, and the substrate is configured to be loaded backside up onto the first tray; loading the first tray carrying the substrates into the load lock and being pumped to a low pressure; Transporting the first tray to the preheating station under vacuum, preheating the first tray carrying the substrate, and transporting the preheated first tray and the substrate to the PECVD processing station; When the pedestal of the PECVD processing station is heated, the pedestal moves upward until it touches the back of the first tray, and pushes the edge of the front part of the first tray into contact with the radio frequency gasket, so that the first tray contacts the upper surface through the radio frequency gasket. A ground loop is formed between the chamber main bodies, and the gas shower head on the first electrode blows the plasma to the substrate on the first tray, forming a first I layer on the back surface of the substrate; transporting the first tray carrying the substrates into an unload lock for release to atmosphere; Flipping the substrate to face up and loading it onto a second tray; loading the second tray carrying the substrate into the load lock and being pumped to a low pressure; The second tray is transported to the preheating station under vacuum, the second tray carrying the substrate is preheated, the preheated second tray and the substrate are transported to the PECVD processing station, and the second tray is formed on the back side of the substrate. I layer; forming an N layer on the second I layer; conveying the second tray carrying the substrates into the unload lock for release to the atmosphere; Invert the substrate and load it backside up onto the third tray; A third tray carrying substrates is loaded into the load lock and pumped to low pressure; The third tray is transported to the preheating station under vacuum, the third tray carrying the substrate is preheated, the preheated third tray and the substrate are transported to the PECVD processing station, and the first I Layer P is formed on the layer; The third tray carrying the substrates is transported into the unload lock for release to atmosphere and the substrates are unloaded into the substrate cassette. A substrate processing method, comprising the steps of: providing a plurality of trays, and the substrate is configured to be loaded backside up onto the first tray; loading the first tray carrying the substrates into the load lock and being pumped to a low pressure; Transporting the first tray to the preheating station under vacuum, preheating the first tray carrying the substrate, and transporting the preheated first tray and the substrate to the PECVD processing station; When the pedestal of the PECVD processing station is heated, the pedestal moves upward until it touches the back of the first tray, and pushes the edge of the front part of the first tray into contact with the radio frequency gasket, so that the first tray contacts the upper surface through the radio frequency gasket. A ground loop is formed between the chamber main bodies, and the gas shower head on the first electrode blows the plasma to the substrate on the first tray, forming a first I layer on the back surface of the substrate; transporting the first tray carrying the substrates into an unload lock for release to the atmosphere; transporting the first tray to a PECVD processing station under vacuum to form a Pth layer on the first I layer on the backside of the substrate; transporting the first tray carrying the substrates into an unload lock for release to the atmosphere; Flipping the substrate to face up and loading it onto a second tray; loading the second tray carrying the substrate into the load lock and being pumped to a low pressure; Transporting the second tray to the preheating station under vacuum, preheating the second tray, and transporting the preheated second tray to the PECVD processing station; When the pedestal of the PECVD processing station is heated, the pedestal moves upward until it touches the back of the second tray, and pushes the edge of the front part of the second tray into contact with the RF gasket, so that the second tray touches the upper surface through the RF gasket. A ground loop is formed between the chamber main bodies, and the gas shower head on the first electrode blows the plasma to the substrate on the second tray to form a second I layer on the front surface of the substrate; transporting the second tray under vacuum to a PECVD processing station to form an Nth layer on the second I layer on the front side of the substrate; The second tray carrying the substrates is conveyed into the unload lock for release to atmosphere and the substrates are unloaded into the substrate cassette.

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