CN114023621B - Substrate processing system and method thereof - Google Patents

Substrate processing system and method thereof Download PDF

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Publication number
CN114023621B
CN114023621B CN202111276832.2A CN202111276832A CN114023621B CN 114023621 B CN114023621 B CN 114023621B CN 202111276832 A CN202111276832 A CN 202111276832A CN 114023621 B CN114023621 B CN 114023621B
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tray
substrate
station
chamber body
processing station
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CN114023621A (en
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雷仲礼
金浩
黄允文
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Dehong Semiconductor Equipment Zhejiang Co ltd
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Dehong Semiconductor Equipment Zhejiang Co ltd
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Priority to TW111108576A priority patent/TWI825615B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a substrate processing system and a method thereof, wherein the substrate processing system comprises a preheating station, a PECVD processing station, a cooling station and a conveying device, wherein the PECVD processing station comprises an upper chamber body, a first electrode arranged on the upper chamber body, a lower chamber body, a second electrode arranged on the lower chamber body, a base arranged on the lower chamber body, a tray made of conductive materials and a radio-frequency gasket arranged at the bottom end of the upper chamber body; the PECVD processing station is used for carrying out PECVD deposition of a film layer on the preheated substrate, when the bottom base of the PECVD processing station is heated, the base moves upwards until contacting the back surface of the tray bearing the substrate, and the edge of the front surface part of the tray is pushed to contact with the radio frequency gasket of the PECVD processing station, so that a grounding loop is formed between the tray and the upper chamber body of the PECVD processing station through the radio frequency gasket; the cooling station is used for cooling the deposited substrate, and the substrate processing system provided by the invention can improve the problem of non-uniformity of plasma deposition on the substrate.

Description

Substrate processing system and method thereof
Technical Field
The invention relates to the field of solar cells, in particular to a substrate processing system and a substrate processing method.
Background
Solar cells, also known as photovoltaic cells, are power generation technologies that utilize the photovoltaic effect to directly convert solar radiation into electrical energy, which have the advantages of being abundant in resources, clean, safe, long in service life, and the like, and are considered to be one of the most promising renewable energy technologies.
The silicon heterojunction cell in the current solar cell has the advantages of low-temperature preparation, simple process steps, excellent temperature coefficient, good product stability and the like, and is expected to become one of the mainstream technologies in the photovoltaic industry. The silicon heterojunction cell includes: after texturing the front and back surfaces of the monocrystalline silicon substrate, forming intrinsic layers on the front and back surfaces of the monocrystalline silicon substrate, an N-type doped layer on the front intrinsic layer and a P-type doped layer on the back intrinsic layer, and forming a conductive transparent layer on the N-type doped layer and a conductive transparent layer on the P-type doped layer.
However, during processing of the substrate, the substrate is carried on a tray, which is then transferred to a reaction chamber of a processing station for processing. The processing station has a pedestal that forms part of the electrode ground. The ground connection may be through a different material connection as the susceptor moves up and down, and thus may create different electrical potentials within the reaction chamber. The difference between the ground potentials can cause arcing and can also interfere with the uniformity of plasma deposition on the substrate.
Accordingly, there is a need for a substrate processing recipe that can improve the problem of plasma deposition non-uniformity on a substrate.
Disclosure of Invention
The invention provides a substrate processing system and a method thereof, which are used for improving the problem of non-uniformity of plasma deposition on a substrate.
In a first aspect, the present invention provides a method for processing a substrate, comprising: a preheating station, a PECVD processing station, a cooling station and a conveying device;
the conveying device is configured to sequentially convey the tray carrying the substrate in the preheating station, the PECVD processing station and the cooling station;
the preheating station is used for preheating the substrates on the tray;
the PECVD processing station comprises an upper chamber body, a first electrode arranged on the upper chamber body, a lower chamber body, a second electrode arranged on the lower chamber body, a base arranged on the lower chamber body, a tray made of conductive materials, and a radio-frequency gasket arranged at the bottom end of the upper chamber body; the PECVD processing station is used for carrying out PECVD deposition of a film layer on a preheated substrate, when a bottom base of the PECVD processing station is heated, the base moves upwards until contacting the back surface of a tray bearing the substrate, and the edge of the front surface part of the tray is pushed to contact with a radio-frequency gasket of the PECVD processing station, so that a grounding loop is formed between the tray and an upper chamber body of the PECVD processing station through the radio-frequency gasket;
the cooling station is used for cooling the deposited substrate.
The substrate processing system provided by the invention has the beneficial effects that: the bottom end of the upper chamber body of the PECVD processing station is provided with the radio frequency gasket, so that the tray forms a grounding loop with the upper chamber body through the radio frequency gasket. This arrangement enables good peripheral grounding to ensure a good return path for the radio frequency so that the ground potential within the closed chamber is the same, thus avoiding arcing and eliminating the effect of differences in ground potential on plasma uniformity over the substrate.
Optionally, the system further comprises a load lock and an unload lock; the loading lock is used for sucking the air pressure in the chamber to be lower than the atmospheric pressure before the preheating station preheats the substrate; the unloading lock is used for restoring the air pressure in the chamber to the atmospheric pressure.
Optionally, the system further comprises a tray loading station and a tray unloading station;
the tray loading station is used for loading the substrate from the substrate box to the tray;
the tray unloading station is used for unloading the substrates from the tray into the substrate box.
Optionally, the system further comprises a memory; the memory is configured to house a substrate cassette carrying a plurality of substrates.
Optionally, when the base is not heated, the tray is located in a cavity formed by the upper chamber body and the lower chamber body, the tray is separated from the upper chamber body, and the size of the tray is larger than that of the base.
Optionally, the upper chamber body of the PECVD processing station is provided with a showerhead for purging non-reactive gas outside the contact point between the upper chamber body and the tray when the front portion edge of the tray contacts the rf gasket, forming a gas barrier.
Optionally, when the edge of the front part of the tray contacts with the radio frequency gasket, a closed cavity is formed between the first electrode, the tray, the upper cavity body and the second electrode.
Alternatively, the first electrode and the second electrode may have a spacing ranging from 5mm to 30mm, and the process chamber design may confine the plasma to provide repeatable plasma conditions and increase deposition rates by using electrode spacing closer to 10 mm.
Optionally, the first electrode is provided with a gas shower for purging plasma towards the substrates on the tray.
Optionally, the first electrode is capable of moving up and down for adjusting a gap between the first electrode and the tray.
In a second aspect, the present invention provides a method for substrate processing comprising: the method comprises the following steps:
providing a plurality of trays, the substrates being configured to be back-up loaded onto the first tray;
loading a first tray carrying a substrate into a load lock and being pumped to a low pressure;
conveying the first tray to a preheating station under vacuum, preheating the first tray carrying the substrate, and conveying the preheated first tray and the substrate to a PECVD processing station;
when the base of the PECVD processing station is heated, the base moves upwards until contacting the back of the first tray, and pushes the front part edge of the first tray to contact with the radio frequency gasket, so that the first tray forms a grounding loop between the radio frequency gasket and the upper chamber body, a gas nozzle on the first electrode sweeps plasma towards a substrate on the first tray, and a first I layer is formed on the back of the substrate;
transporting a first tray carrying substrates into an unloading lock for release to the atmosphere;
turning the substrate to the right side upwards and loading the substrate onto a second tray;
loading a second tray carrying the substrate into the load lock and being pumped to a low pressure;
conveying the second tray to a preheating station under vacuum, preheating the second tray carrying the substrate, conveying the preheated second tray and the substrate to a PECVD processing station, and forming a second I layer on the back surface of the substrate;
forming an N layer on the second I layer;
transporting a second tray carrying substrates into an unloading lock for release into the atmosphere;
turning the substrate to the back side upwards and loading the substrate onto a third tray;
loading a third tray carrying the substrate into the load lock and being pumped to a low pressure;
conveying the third tray to a preheating station under vacuum, preheating the third tray carrying the substrate, conveying the preheated third tray and the substrate to a PECVD processing station, and forming a P layer on a first I layer on the back surface of the substrate;
a third tray carrying substrates is transported into the unload lock for release to the atmosphere and unloading of substrates into the substrate cassette.
In a third aspect, the present invention also provides another method for processing a substrate, comprising: the method comprises the following steps:
providing a plurality of trays, the substrates being configured to be back-up loaded onto the first tray;
loading a first tray carrying a substrate into a load lock and being pumped to a low pressure;
conveying the first tray to a preheating station under vacuum, preheating the first tray carrying the substrate, and conveying the preheated first tray and the substrate to a PECVD processing station;
when the base of the PECVD processing station is heated, the base moves upwards until contacting the back of the first tray, and pushes the front part edge of the first tray to contact with the radio frequency gasket, so that the first tray forms a grounding loop between the radio frequency gasket and the upper chamber body, a gas nozzle on the first electrode sweeps plasma towards a substrate on the first tray, and a first I layer is formed on the back of the substrate;
transporting a first tray carrying substrates into an unloading lock for release into the atmosphere;
transporting the first tray to a PECVD processing station under vacuum to form a P layer on a first I layer on the back surface of the substrate;
transporting a first tray carrying substrates into an unloading lock for release into the atmosphere;
turning the substrate to the right side upwards and loading the substrate onto a second tray;
loading a second tray carrying the substrate into the load lock and being pumped to a low pressure;
conveying the second tray to a preheating station under vacuum, preheating the second tray, and conveying the preheated second tray to a PECVD processing station;
when the base of the PECVD processing station is heated, the base moves upwards until contacting the back of the second tray, and pushes the edge of the front part of the second tray to contact with the radio-frequency gasket, so that the second tray forms a grounding loop between the radio-frequency gasket and the upper chamber body, a gas nozzle on the first electrode sweeps plasma towards a substrate on the second tray, and a second I layer is formed on the front of the substrate;
transferring the second pallet to a PECVD processing station under vacuum to form an N layer on a second I layer on the front surface of the substrate;
a second tray carrying substrates is transported into an unloading lock for release into the atmosphere and substrates are unloaded into a substrate cassette.
Other features will be described in the detailed description.
Drawings
FIG. 1 illustrates a PECVD processing station provided by the present invention;
FIG. 2A illustrates a substrate processing system including an IPIN process flow of the PECVD processing station of FIG. 1 provided by the present invention;
FIG. 2B illustrates a substrate processing system including an IINP processing flow of the PECVD processing station of FIG. 1 provided by the present invention;
FIG. 3 illustrates a flow diagram of a substrate processing method based on the substrate processing system shown in FIG. 2B;
fig. 4 shows a flow diagram of a substrate processing method based on the substrate processing system shown in fig. 2A.
Detailed Description
The technical solutions in the embodiments of the present invention are described below with reference to the accompanying drawings in the embodiments of the present invention. In describing embodiments of the present invention, the terminology used in the embodiments below is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the specification of this application and the appended claims, the singular forms "a," "an," "the," and "the" are intended to include, for example, "one or more" such forms of expression, unless the context clearly indicates to the contrary. It should also be understood that in the various embodiments herein below, "at least one", "one or more" means one or more than two (including two). The term "and/or" is used to describe an association relationship of associated objects, meaning that there may be three relationships; for example, a and/or B may represent: a alone, a and B together, and B alone, wherein A, B may be singular or plural. The character "/" generally indicates that the context-dependent object is an "or" relationship.
Various exemplary embodiments and details are described below when related with reference to the accompanying drawings. It should be noted that the figures may or may not be drawn to scale and that elements of similar structures or functions are represented by like reference numerals throughout the figures. It should also be noted that the drawings are only intended to facilitate the description of the embodiments. They are not intended as an exhaustive description of the invention or as a limitation on the scope of the invention. Additionally, the illustrated embodiments need not have all of the aspects or advantages shown. An aspect or advantage described in connection with a particular embodiment is not necessarily limited to that embodiment and may be practiced in any other embodiment even if not so shown, or if not explicitly described.
In order to make the above objects, features and advantageous effects of the present invention more apparent, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.
In view of the problems existing in the prior art, an embodiment of the present invention provides a plasma enhanced chemical vapor deposition (plasma enhanced chemical vapor deposition, PECVD) processing station, as shown in fig. 1, which has a unique process chamber design, namely, the PECVD processing station includes an upper chamber body 5, a first electrode 6 disposed on the upper chamber body 5, a lower chamber body 9, a second electrode 7 disposed on the lower chamber body 9, a base 2 disposed on the lower chamber body 9, a tray 1 made of conductive material, and a radio frequency gasket 8 disposed at the bottom end of the upper chamber body 5. The first electrode 6 is provided with a gas shower for purging the plasma towards the substrates on the tray.
Before the susceptor is heated, in fig. 1 (a), a tray is located in a cavity formed by the upper chamber body 5 and the lower chamber body 9, the tray 1 is separated from the upper chamber body 5, the tray 1 is used for carrying a substrate, and the size of the tray 1 is larger than that of the susceptor 2; this arrangement ensures that the plasma does not leak onto the susceptor 2, thereby avoiding contamination of the substrate on the back side.
When the susceptor 2 is heated, as shown in (b) of fig. 1, the susceptor 2 is heated to move upward until contacting the rear surface of the tray 1, and pushing the front surface portion edge of the tray 1 into contact with the rf gasket 8, so that the tray 1 forms a ground circuit with the upper chamber body 5 through the rf gasket 8. This arrangement enables good peripheral grounding to ensure a good return path for the radio frequency so that the ground potential within the closed chamber is the same, thus avoiding arcing and eliminating the effect of differences in ground potential on plasma uniformity over the substrate.
In addition, when the front part edge of the tray 1 is in contact with the rf gasket 8, a closed cavity is formed among the first electrode 6, the tray 1 and the upper chamber body 5. Optionally, the closed cavity is a vacuum environment. On one hand, the plasma is confined in the tray area, and the effect of the plasma on the deposition or etching of the surface of the substrate is maximized; on the other hand, the vacuum environment is helpful for reducing the mixing of impurities in the air into the closed cavity, and ensuring the plasma reaction effect.
In addition, when the front part edge of the tray 1 is in contact with the rf gasket 8, a closed cavity is formed among the first electrode 6, the tray 1 and the upper chamber body 5. Optionally, the closed cavity is a vacuum environment. On one hand, the plasma is confined in the tray area, and the effect of the plasma on the deposition or etching of the surface of the substrate is maximized; on the other hand, the vacuum environment is helpful for reducing the mixing of impurities in the air into the closed cavity, and ensuring the plasma reaction effect. The first electrode can move up and down, the gap between the first electrode and the tray is adjusted, the process chamber design can limit the distance between the first electrode and the second electrode to be 5mm to 30mm, and in addition, plasma can be limited so as to be convenient for recycling, so that the deposition rate can be increased.
Based on the PECVD processing station, the invention provides a substrate processing system which comprises a preheating station, a PECVD processing station, a cooling station and a conveying device. Wherein the transfer device is configured to sequentially transfer the trays carrying the substrates in the preheating station, the PECVD processing station, the cooling station; the preheating station is used for preheating the substrates on the tray.
The PECVD processing station comprises: the device comprises an upper chamber body, a first electrode arranged on the upper chamber body, a lower chamber body, a second electrode arranged on the lower chamber body, a base arranged on the lower chamber body, a tray made of conductive materials, and a radio-frequency gasket arranged at the bottom end of the upper chamber body; the PECVD processing station is used for carrying out PECVD deposition of a film layer on a preheated substrate, when a bottom base of the PECVD processing station is heated, the base moves upwards until contacting the back surface of a tray bearing the substrate, and the edge of the front surface part of the tray is pushed to contact with a radio-frequency gasket of the PECVD processing station, so that a grounding loop is formed between the tray and an upper chamber body of the PECVD processing station through the radio-frequency gasket;
the cooling station is used for cooling the deposited substrate.
Optionally, the system further comprises a load lock and an unload lock; the loading lock is used for sucking the air pressure in the chamber to be lower than the atmospheric pressure before the preheating station preheats the substrate; the unloading lock is used for restoring the air pressure in the chamber to the atmospheric pressure.
Optionally, the system further comprises a tray loading station and a tray unloading station; the tray loading station is used for loading the substrate from the substrate box to the tray; the tray unloading station is used for unloading the substrates from the tray into the substrate box.
Optionally, the system further comprises a memory; the memory is configured to house a substrate cassette carrying a plurality of substrates.
The system may be composed of two subsystems to accomplish deposition of the IP/IN layer as shown IN fig. 2A, or the substrate processing system may be composed of 3 subsystems to accomplish deposition of the I, I, N, P layer as shown IN fig. 2B. In particular, the description of the system components in connection with fig. 2A and 2B is as follows: 10 denotes a substrate processing system assembled from 2 or more subsystems; 11 denotes subsystem 1 with I-layer deposition on the back side; 12 denotes subsystem 2 with I and N layer deposition plated on the front side; 13 denotes subsystem 3 with deposition of a plating P layer on the back; 14 shows subsystem 1 deposited with I, P layers on the back side; 101 denotes a substrate cassette storage station for storing cassettes of a loader; 102 denotes loading of substrates onto trays, which are recirculated from a transfer station-loading station; 103 denotes a tray preparation station-preparation station; 104 a load lock chamber (load lock chamber) for load locking; 105 denotes a preheating chamber for heating the substrate to 200-250 degrees celsius; 106 denotes a PECVD processing station for deposition of an intrinsic layer; 107 indicates a PECVD processing station for deposition of a pre-doped layer, such as an N layer. 108 denotes an unload lock chamber (Unload lock chamber) for unloading the lock; 109 denotes an unloading station (unloading station); 110 denotes a transfer station for picking up a substrate and the tray is lowered back to the substrate loading via a track transferred by the system to the underside; 111 denotes a substrate being turned at a turning station after being picked up from a transfer station and placed on a tray forwarded from a next subsystem; 112 denotes a rolling station for moving the pallet to the end of the track; 113 and 114 denote lateral rolling stations for collecting trays and moving laterally, wherein the lateral rolling station denoted 113 can make turns; 115 A PECVD processing station for deposition of a post-doped layer (e.g., a P layer); 116 a substrate cassette stocker for storing empty cassettes to receive substrates from the unloader; 117 denotes a substrate cassette reservoir for transferring finished substrates back to the cassette or another tray for the next processing step; 118 denotes an inspection aisle for cabin inspection; 119 a vacuum pump for reducing the process pressure to sub-atmospheric levels.
In this embodiment, the first treatment of the I layer has the advantage of reducing the cooling time required to passivate the bare silicon surface after texturing; alternatively, the substrate may have double sided deposition on the I layer, using a tray with openings on both sides of the substrate, and then depositing the N and P layers on the I layer on the front and back sides of the substrate, respectively, by two independent systems.
Optionally, the system may also take into account a texturing station for texturing the front and back surfaces of the substrate to form textures on the front (e.g., first) and back (e.g., second) surfaces of the substrate (also known as a substrate). The material of the front and rear intrinsic layers includes amorphous silicon (a-SI: H). In some cases, each of the front and rear intrinsic layers may include one or more (e.g., 2,3, etc.) layers of amorphous silicon: the material of the front doped layer may be amorphous silicon or microcrystalline silicon of the stack, or both may be doped with N-type ions. The material of the rear doped layer is amorphous silicon doped with P-type ions. In some cases, the front doped intrinsic layer may be a phosphorus doped intrinsic layer and the back doped intrinsic layer may be a boron doped intrinsic layer. In this case, the N layer may be formed using phosphorus, and the P layer may be formed using boron. The material of the front conductive layer and the rear conductive layer is a transparent conductive oxide. In other embodiments, other materials may be used for the different layers.
In some cases, the N and P layers may be made of microcrystalline silicon. In addition, in some embodiments, any one of the I, N, and P layers, any or all of the layers may be composed of multiple deposited layers of similar materials deposited under different processing conditions to improve the conversion efficiency of the solar cell.
The conveyor in the above system may include rails, guides, conveying surfaces, etc. that extend along one or more conveying chambers that provide a vacuum environment. Thereby transporting the trays to different processing stations.
In some embodiments, any of the processing stations described herein may include mechanical components, electrical components, electromechanical components, or any combination thereof configured to provide the features described herein. Further, in some embodiments, any of the processing stations described herein may optionally include a control component, a feedback component (e.g., one or more sensors), or any other mechanical and/or electrical component.
Based on the substrate processing system shown in fig. 2B, the embodiment of the invention further provides a substrate processing method, as shown in fig. 3, including the following steps:
s301, a plurality of trays are provided, and the substrate is configured to be loaded onto the first tray with the back surface facing upward.
That is, at the beginning of deposition, the substrate is loaded back up onto the first tray.
S302, loading a first tray carrying the substrate into a load lock and pumping to a low pressure.
S303, conveying the first tray to a preheating station under vacuum, preheating the first tray carrying the substrate, and conveying the preheated first tray and the substrate to a PECVD processing station.
That is, the first tray is transported to the preheating chamber under vacuum to be preheated to 200-250 ℃.
And S304, when the base of the PECVD processing station is heated, the base moves upwards until contacting the back surface of the first tray, and pushes the front surface part edge of the first tray to contact with the radio frequency gasket, so that the first tray forms a grounding loop between the radio frequency gasket and the upper chamber body, a gas spray head on the first electrode sweeps plasma towards the substrate on the first tray, and a first I layer is formed on the back surface of the substrate.
That is, the first tray is transported into the PECVD chamber under vacuum to deposit the intrinsic layer on the backside of the substrate at 200-250 degrees Celsius.
S305, the first tray carrying the substrate is transported into the unload lock for release to the atmosphere.
And S306, overturning the substrate to be loaded on a second tray with the right side facing upwards.
That is, the substrate is flipped over and placed front on a new second tray.
S307, the second tray carrying the substrate is loaded into the load lock and pumped to a low pressure.
At this time, the first tray may be reset to be reused.
S308, conveying the second tray to a preheating station under vacuum, preheating the second tray carrying the substrate, conveying the preheated second tray and the substrate to a PECVD processing station, and forming a second I layer on the back surface of the substrate.
That is, the second tray is transported to the preheating chamber under vacuum to be preheated to 200-250 ℃. The second tray is transported under vacuum to the PECVD processing station to deposit an intrinsic layer on the front side of the substrate at 200-250 degrees Celsius.
S309, forming an N layer on the second I layer.
That is, the second tray is transported to the PECVD processing station under vacuum to deposit an N-doped layer on the front side of the substrate at 200-250 degrees Celsius.
S310, the second tray carrying the substrate is transported into the unload lock for release into the atmosphere.
At this time, the second tray may be reset to be reused.
And S311, the substrate is turned over to the back side and is loaded on a third tray.
S312, the third tray carrying the substrate is loaded into the load lock and pumped to a low pressure.
S313, conveying the third tray to a preheating station under vacuum, preheating the third tray carrying the substrate, conveying the preheated third tray and the substrate to a PECVD processing station, and forming a P layer on the first I layer on the back surface of the substrate.
That is, the third tray is transported to the PECVD processing station under vacuum to deposit a P-doped layer on the back side of the substrate at 200-250 degrees Celsius.
S314, the third tray carrying the substrate is transferred to the unloading lock to be released to the atmosphere, and the substrate is unloaded to the substrate cassette.
At this point the deposition is complete and the third tray can be reset for reuse.
Based on the substrate processing system shown in fig. 2A, an embodiment of the present invention further provides a substrate processing method, as shown in fig. 4, including the following steps:
s401, a plurality of trays are provided, and the substrate is configured to be loaded onto the first tray with the back surface facing upward.
That is, at the beginning of deposition, the substrate is loaded back up onto the first tray.
S402, the first tray carrying the substrate is loaded into the load lock and pumped to a low pressure.
S403, conveying the first tray to a preheating station under vacuum, preheating the first tray carrying the substrate, and conveying the preheated first tray and the substrate to a PECVD processing station.
That is, the first tray is transported to the preheating chamber under vacuum to be preheated to 200-250 ℃.
And S404, when the base of the PECVD processing station is heated, the base moves upwards until contacting the back surface of the first tray, and pushes the front surface part edge of the first tray to contact with the radio frequency gasket, so that the first tray forms a grounding loop between the radio frequency gasket and the upper chamber body, a gas spray head on the first electrode sweeps plasma towards the substrate on the first tray, and a first I layer is formed on the back surface of the substrate.
S405, the first tray carrying the substrate is transported into the unload lock for release into the atmosphere.
S406, conveying the first tray to a PECVD processing station under vacuum, and forming a P layer on the first I layer on the back surface of the substrate.
S407, the first tray carrying the substrate is transported into an unloading lock for release into the atmosphere.
And S408, overturning the substrate to be loaded on a second tray with the right side facing upwards.
S409, a second tray carrying the substrate is loaded into the load lock and pumped to a low pressure.
S410, conveying the second tray to a preheating station under vacuum, preheating the tray, and conveying the preheated second tray to a PECVD processing station.
And S411, when the base of the PECVD processing station is heated, the base moves upwards until contacting the back surface of the second tray, and pushes the edge of the front surface part of the tray to contact with the radio frequency gasket, so that the second tray forms a grounding loop between the radio frequency gasket and the upper chamber body, a gas spray head on the first electrode sweeps plasma towards the substrate on the second tray, and a second I layer is formed on the front surface of the substrate.
And S412, conveying the second tray to a PECVD processing station under vacuum, and forming an N layer on the second I layer on the front surface of the substrate.
S413, transporting the second tray carrying the substrate into an unloading lock for release into the atmosphere and unloading the substrate into a substrate cassette.
The use of the terms "first," "second," "third," and "fourth" do not imply any particular order, but rather are included to identify individual elements. Moreover, the use of the terms first, second, etc. do not denote any order or importance, but rather the terms first, second, etc. are used to distinguish one element from another. Note that the first and second words are used herein and elsewhere for labeling purposes and are not intended to represent any particular spatial or temporal ordering. Moreover, the labeling of a first element does not imply the presence of a second element, and vice versa.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.

Claims (12)

1. A substrate processing system, comprising: a preheating station, a PECVD processing station, a cooling station and a conveying device;
the transfer device is configured to sequentially transfer a tray carrying substrates in the preheating station, the PECVD processing station and the cooling station;
the preheating station is used for preheating the substrates on the tray;
the PECVD processing station comprises: the device comprises an upper chamber body, a first electrode arranged on the upper chamber body, a lower chamber body, a second electrode arranged on the lower chamber body, a base arranged on the lower chamber body, a tray made of conductive materials and a radio-frequency gasket arranged at the bottom end of the upper chamber body; the PECVD processing station is used for carrying out PECVD deposition of a film layer on the preheated substrate, when the bottom base of the PECVD processing station is heated, the base moves upwards until contacting the back surface of the tray bearing the substrate, and the front surface part edge of the tray is pushed to contact with the radio frequency gasket of the PECVD processing station, so that a grounding loop is formed between the tray and the upper chamber body of the PECVD processing station through the radio frequency gasket;
the cooling station is used for cooling the deposited substrate.
2. The system of claim 1, further comprising a load lock and an unload lock;
the loading lock is used for sucking the air pressure in the chamber to be lower than the atmospheric pressure before the preheating station preheats the substrate;
the unloading lock is used for restoring the air pressure in the chamber to the atmospheric pressure.
3. The system of claim 1, further comprising a pallet loading station and a pallet unloading station;
the tray loading station is used for loading the substrate from the substrate box to the tray;
the tray unloading station is used for unloading the substrates from the tray into the substrate box.
4. The system of claim 1, further comprising a memory;
the memory is configured to house a substrate cassette carrying a plurality of substrates.
5. The system of claim 1, wherein the tray is located in a cavity formed by the upper chamber body and the lower chamber body when the susceptor is unheated, the tray being separate from the upper chamber body, the tray having a size greater than a size of the susceptor.
6. The system of claim 1, wherein the upper chamber body of the PECVD processing station is provided with a showerhead for purging non-reactive gas to the outside of the contact point between the upper chamber body and the pallet when the front portion edge of the pallet is in contact with the rf gasket, forming a gas barrier.
7. The system of any one of claims 1 to 6, wherein the first electrode, the tray and the upper chamber body, the second electrode form a closed cavity therebetween when the front portion edge of the tray is in contact with the radio frequency gasket.
8. The system of any one of claims 1 to 6, wherein the first electrode and the second electrode have a spacing ranging from 5mm to 30mm.
9. The system of any one of claims 1 to 6, wherein the first electrode is provided with a gas shower for purging plasma towards the substrates on the tray.
10. The system of any one of claims 1 to 6, wherein the first electrode is movable up and down for adjusting a gap between the first electrode and the tray.
11. A method of processing a substrate, comprising:
providing a plurality of trays, the substrates being configured to be back-up loaded onto the first tray;
loading a first tray carrying a substrate into a load lock and being pumped to a low pressure;
conveying the first tray to a preheating station under vacuum, preheating the first tray carrying the substrate, and conveying the preheated first tray and the substrate to a PECVD processing station;
when the base of the PECVD processing station is heated, the base moves upwards until contacting the back of the first tray, and pushes the front part edge of the first tray to contact with the radio frequency gasket, so that the first tray forms a grounding loop between the radio frequency gasket and the upper chamber body, a gas nozzle on the first electrode sweeps plasma towards a substrate on the first tray, and a first I layer is formed on the back of the substrate;
transporting a first tray carrying substrates into an unloading lock for release to the atmosphere;
turning the substrate to the right side upwards and loading the substrate onto a second tray;
loading a second tray carrying the substrate into the load lock and being pumped to a low pressure;
conveying the second tray to a preheating station under vacuum, preheating the second tray carrying the substrate, conveying the preheated second tray and the substrate to a PECVD processing station, and forming a second I layer on the back surface of the substrate;
forming an N layer on the second I layer;
transporting a second tray carrying substrates into an unloading lock for release into the atmosphere;
turning the substrate to the back side upwards and loading the substrate onto a third tray;
loading a third tray carrying the substrate into the load lock and being pumped to a low pressure;
conveying the third tray to a preheating station under vacuum, preheating the third tray carrying the substrate, conveying the preheated third tray and the substrate to a PECVD processing station, and forming a P layer on a first I layer on the back surface of the substrate;
a third tray carrying substrates is transported into the unload lock for release to the atmosphere and unloading of substrates into the substrate cassette.
12. A method of processing a substrate, comprising:
providing a plurality of trays, the substrates being configured to be back-up loaded onto the first tray;
loading a first tray carrying a substrate into a load lock and being pumped to a low pressure;
conveying the first tray to a preheating station under vacuum, preheating the first tray carrying the substrate, and conveying the preheated first tray and the substrate to a PECVD processing station;
when the base of the PECVD processing station is heated, the base moves upwards until contacting the back of the first tray, and pushes the front part edge of the first tray to contact with the radio frequency gasket, so that the first tray forms a grounding loop between the radio frequency gasket and the upper chamber body, a gas nozzle on the first electrode sweeps plasma towards a substrate on the first tray, and a first I layer is formed on the back of the substrate;
transporting a first tray carrying substrates into an unloading lock for release into the atmosphere;
transporting the first tray to a PECVD processing station under vacuum to form a P layer on a first I layer on the back surface of the substrate;
transporting a first tray carrying substrates into an unloading lock for release into the atmosphere;
turning the substrate to the right side upwards and loading the substrate onto a second tray;
loading a second tray carrying the substrate into the load lock and being pumped to a low pressure;
conveying the second tray to a preheating station under vacuum, preheating the second tray, and conveying the preheated second tray to a PECVD processing station;
when the base of the PECVD processing station is heated, the base moves upwards until contacting the back of the second tray, and pushes the edge of the front part of the second tray to contact with the radio-frequency gasket, so that the second tray forms a grounding loop between the radio-frequency gasket and the upper chamber body, a gas nozzle on the first electrode sweeps plasma towards a substrate on the second tray, and a second I layer is formed on the front of the substrate;
transferring the second pallet to a PECVD processing station under vacuum to form an N layer on a second I layer on the front surface of the substrate;
a second tray carrying substrates is transported into an unloading lock for release into the atmosphere and substrates are unloaded into a substrate cassette.
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