TW202308488A - Method for manufacturing printed wiring board - Google Patents

Method for manufacturing printed wiring board Download PDF

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Publication number
TW202308488A
TW202308488A TW111110578A TW111110578A TW202308488A TW 202308488 A TW202308488 A TW 202308488A TW 111110578 A TW111110578 A TW 111110578A TW 111110578 A TW111110578 A TW 111110578A TW 202308488 A TW202308488 A TW 202308488A
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resin composition
wiring board
printed wiring
resin
manufacturing
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TW111110578A
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Chinese (zh)
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大石凌平
川合賢司
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日商味之素股份有限公司
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Publication of TW202308488A publication Critical patent/TW202308488A/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676Single layer compositions
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • C08G59/4223Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof aromatic
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • C08G59/4284Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof together with other curing agents
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62Alcohols or phenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/0353Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/0373Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0026Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2363/00Characterised by the use of epoxy resins; Derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2463/00Characterised by the use of epoxy resins; Derivatives of epoxy resins
    • C08J2463/02Polyglycidyl ethers of bis-phenols
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0104Properties and characteristics in general
    • H05K2201/0129Thermoplastic polymer, e.g. auto-adhesive layer; Shaping of thermoplastic polymer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Epoxy Resins (AREA)

Abstract

To provide a method for manufacturing a printed wiring board, which can suppress the occurrence of a crack after a desmear treatment (roughening treatment). A method for manufacturing a printed wiring board comprises the steps of (A) hardening, by heat, a resin composition layer of a laminate having the inner layer substrate, and a resin composition layer joined to the inner layer substrate to form an insulator layer of which the glass transition temperature is T1(DEG C), (B) performing a heat treatment on the insulator layer at T2(DEG C), and (C) performing a desmear treatment on the insulator layer with an oxidant solution in this order. The resin composition layer contains an epoxy resin and an active ester-based hardening agent, and the following expressions (1) and (2) are satisfied: -20 ≤ T1-T2 ≤ 20 (1); and 60 ≤ T2 ≤ 150 (2).

Description

印刷配線板之製造方法Manufacturing method of printed wiring board

本發明係有關印刷配線板之製造方法。This invention relates to the manufacturing method of a printed wiring board.

作為多層印刷配線板之製造技術,已知有藉由於內層基板上交替重疊絕緣層與導體層之增層方式之製造方法。絕緣體層一般係藉由使樹脂組成物硬化而形成。例如,於專利文獻1,揭示使用包含氰酸酯樹脂、特定的環氧樹脂及活性酯硬化劑之樹脂組成物,形成印刷配線板之絕緣層。 [先前技術文獻] [專利文獻] As a manufacturing technique of multilayer printed wiring boards, a manufacturing method of a build-up method in which insulating layers and conductive layers are alternately stacked on an inner substrate is known. The insulator layer is generally formed by curing a resin composition. For example, Patent Document 1 discloses that an insulating layer of a printed wiring board is formed using a resin composition including a cyanate resin, a specific epoxy resin, and an active ester hardener. [Prior Art Literature] [Patent Document]

[專利文獻1]日本特開2011-144361號公報[Patent Document 1] Japanese Patent Laid-Open No. 2011-144361

[發明欲解決之課題][Problem to be solved by the invention]

近年,電子機器及電子零件之小型化變得顯著,伴隨此,為使印刷配線板更薄型化而要求印刷配線板之絕緣層必須更薄層化。In recent years, the miniaturization of electronic equipment and electronic parts has become remarkable. Along with this, in order to make the printed wiring board thinner, the insulating layer of the printed wiring board must be thinner.

但是,已知若將絕緣層薄層化,則於印刷配線板製程中之去膠渣處理(粗化處理)步驟後,將沿著內層基板中之配線或焊墊等之下層銅形狀破裂,且藉由雷射等開出的孔之周邊破裂,亦即龜裂之發生增加。However, it is known that if the insulating layer is thinned, after the desmear treatment (roughening treatment) step in the printed wiring board process, it is known that the shape of the underlying copper along the wiring or pads in the inner substrate will be cracked. , and the periphery of the hole opened by laser etc. breaks, that is, the occurrence of cracks increases.

本發明之課題在於提供可抑制去膠渣步驟(粗化步驟)後之龜裂發生之印刷配線板之製造方法。 [用以解決課題之手段] The object of this invention is to provide the manufacturing method of the printed wiring board which can suppress the generation|occurrence|production of the crack after a desmear process (roughening process). [Means to solve the problem]

為了達成本發明之課題,本發明人等謹慎檢討之結果,發現藉由於絕緣層之形成中使用活性酯系硬化劑,並於絕緣層形成後以其玻璃轉移溫度T 1(℃)附近(±20℃以內)之溫度T 2(℃)加熱處理絕緣層,可抑制去膠渣處理(粗化處理)後之龜裂發生,因而完成本發明。 In order to achieve the subject of the present invention, the present inventors found that by using an active ester-based hardener in the formation of the insulating layer, after the insulating layer is formed, the glass transition temperature T 1 (°C) is near (± Heat treatment of the insulating layer at a temperature T 2 (°C) within 20°C can suppress the occurrence of cracks after desmearing (roughening) treatment, thus completing the present invention.

亦即,本發明包含以下內容。 [1]一種印刷配線板之製造方法,其依序包含下述步驟: (A)使具備內層基板與接合於該內層基板上之樹脂組成物層的積層體之樹脂組成物層熱硬化,形成玻璃轉移溫度為T 1(℃)之絕緣層的步驟, (B)於T 2(℃)加熱處理絕緣層之步驟,及 (C)以氧化劑溶液將絕緣層進行去膠渣處理之步驟, 樹脂組成物層包含環氧樹脂及活性酯系硬化劑,且 同時滿足下述式(1)及(2), -20≦T 1-T 2≦20   (1) 60≦T 2≦150     (2)。 [2]如上述[1]之印刷配線板之製造方法,其中(A)步驟依序包含下述步驟: (A-1)準備具備支撐體與設於該支撐體上之樹脂組成物層的樹脂薄片之步驟, (A-2)以使樹脂組成物層與內層基板接合之方式積層樹脂薄片,獲得積層體之步驟,及 (A-3)使樹脂組成物層熱硬化,形成玻璃轉移溫度為T 1(℃)之絕緣層之步驟。 [3]如上述[2]之印刷配線板之製造方法,其中(A-3)步驟依序包含下述步驟: (A-31)使樹脂組成物層於比硬化加熱溫度低之預備加熱溫度予以預備加熱之步驟,及 (A-32)使樹脂組成物層於硬化加熱溫度下加熱,使樹脂組成物層熱硬化,形成玻璃轉移溫度為T 1(℃)之絕緣層之步驟。 [4]如上述[3]之印刷配線板之製造方法,其中硬化加熱溫度為150℃~210℃,且預備加熱溫度為100℃~150℃。 [5]如上述[2]至[4]中任一項之印刷配線板之製造方法,其中(A)步驟係於(A-3)步驟之後,進而包含下述步驟: (A-4)使絕緣層冷卻至30℃以下之步驟。 [6]如上述[1]至[5]中任一項之印刷配線板之製造方法,其中(A)步驟進而包含下述步驟: (A-5)對絕緣層或樹脂組成物層開孔之步驟。 [7]如上述[6]之印刷配線板之製造方法,其中(A-5)步驟係使用雷射而實施。 [8]如上述[6]或[7]之印刷配線板之製造方法,其中藉由(A-5)步驟所形成之孔包含孔頂徑100μm以下者。 [9]如上述[1]至[8]中任一項之印刷配線板之製造方法,其中(B)步驟之加熱處理時間為10分鐘以上。 [10]如上述[1]至[9]中任一項之印刷配線板之製造方法,其中(B)步驟之加熱處理係藉由於氣體環境下加熱絕緣層而進行。 [11]如上述[1]至[10]中任一項之印刷配線板之製造方法,其中於(C)步驟之後,進而包含(D)於絕緣層表面形成導體層之步驟。 [12]如上述[1]至[11]中任一項之印刷配線板之製造方法,其中T 2(℃)為100(℃)以上。 [13]如上述[1]至[12]中任一項之印刷配線板之製造方法,其中T 1-T 2(℃)為-5(℃)~10(℃)。 [14]如上述[1]至[13]中任一項之印刷配線板之製造方法,其中樹脂組成物層進而包含無機填充材。 [15]如上述[14]之印刷配線板之製造方法,其中無機填充材之含量,於將樹脂組成物層中之不揮發成分設為100質量%時,為50質量%以上。 [16]如上述[1]至[15]中任一項之印刷配線板之製造方法,其中樹脂組成物層進而包含苯氧樹脂。 [17]如上述[1]至[16]中任一項之印刷配線板之製造方法,其中樹脂組成物層進而包含自由基聚合性化合物。 [18]如上述[1]至[17]中任一項之印刷配線板之製造方法,其中樹脂組成物層進而包含氰酸酯系硬化劑。 [發明效果] That is, the present invention includes the following. [1] A method of manufacturing a printed wiring board, which sequentially includes the steps of: (A) thermosetting a resin composition layer of a laminate including an inner layer substrate and a resin composition layer bonded to the inner layer substrate , the step of forming an insulating layer with a glass transition temperature of T 1 (°C), (B) the step of heat-treating the insulating layer at T 2 (°C), and (C) the step of desmearing the insulating layer with an oxidant solution , the resin composition layer contains epoxy resin and active ester hardener, and satisfies the following formulas (1) and (2) at the same time, -20≦T 1 -T 2 ≦20 (1) 60≦T 2 ≦150 ( 2). [2] The method for producing a printed wiring board according to the above [1], wherein step (A) includes the following steps in order: (A-1) preparing a substrate having a support and a resin composition layer provided on the support The step of the resin sheet, (A-2) the step of laminating the resin sheet so that the resin composition layer and the inner substrate are bonded to obtain a laminate, and (A-3) thermosetting the resin composition layer to form a glass transition The temperature is T 1 (°C) the step of the insulating layer. [3] The method of manufacturing a printed wiring board according to the above [2], wherein the step (A-3) includes the following steps in order: (A-31) Preheating the resin composition layer at a preliminary heating temperature lower than the curing heating temperature The step of preheating, and (A-32) the step of heating the resin composition layer at the curing heating temperature to thermally harden the resin composition layer to form an insulating layer having a glass transition temperature of T 1 (°C). [4] The method for producing a printed wiring board according to [3] above, wherein the curing heating temperature is 150°C to 210°C, and the preliminary heating temperature is 100°C to 150°C. [5] The method of manufacturing a printed wiring board according to any one of the above-mentioned [2] to [4], wherein the step (A) is after the step (A-3), and further includes the following steps: (A-4) The step of cooling the insulating layer to below 30°C. [6] The method for producing a printed wiring board according to any one of the above [1] to [5], wherein the step (A) further includes the following step: (A-5) Opening holes in the insulating layer or the resin composition layer the steps. [7] The method of manufacturing a printed wiring board according to the above [6], wherein the step (A-5) is performed using a laser. [8] The method of manufacturing a printed wiring board according to the above [6] or [7], wherein the holes formed in the step (A-5) include those having a top diameter of 100 μm or less. [9] The method for producing a printed wiring board according to any one of [1] to [8] above, wherein the heat treatment time in the step (B) is 10 minutes or more. [10] The method for producing a printed wiring board according to any one of [1] to [9] above, wherein the heat treatment in the step (B) is performed by heating the insulating layer in a gas atmosphere. [11] The method for producing a printed wiring board according to any one of [1] to [10] above, further including (D) a step of forming a conductor layer on the surface of the insulating layer after the step (C). [12] The method for producing a printed wiring board according to any one of [1] to [11] above, wherein T 2 (°C) is 100 (°C) or more. [13] The method for producing a printed wiring board according to any one of [1] to [12] above, wherein T 1 -T 2 (°C) is -5 (°C) to 10 (°C). [14] The method for producing a printed wiring board according to any one of [1] to [13] above, wherein the resin composition layer further contains an inorganic filler. [15] The method for producing a printed wiring board according to [14] above, wherein the content of the inorganic filler is 50% by mass or more when the non-volatile content in the resin composition layer is 100% by mass. [16] The method for producing a printed wiring board according to any one of [1] to [15] above, wherein the resin composition layer further contains a phenoxy resin. [17] The method for producing a printed wiring board according to any one of [1] to [16] above, wherein the resin composition layer further contains a radical polymerizable compound. [18] The method for producing a printed wiring board according to any one of [1] to [17] above, wherein the resin composition layer further contains a cyanate-based hardener. [Invention effect]

根據本發明,可提供可抑制去膠渣處理後(粗化處理)後之龜裂發生之印刷配線板之製造方法。According to this invention, the manufacturing method of the printed wiring board which can suppress generation|occurrence|production of the crack after a desmear process (roughening process) can be provided.

以下,針對其較佳實施形態詳細說明本發明。但,本發明並非限定於下述實施形態及例示物者,於不脫離本發明之申請專利範圍及其均等範圍的範圍內可實施任意變更。Hereinafter, the present invention will be described in detail about its preferred embodiments. However, the present invention is not limited to the following embodiments and illustrations, and any changes can be made within the scope of the present invention without departing from the scope of patent claims and its equivalent range.

<印刷配線板之製造方法> 本發明之印刷配線板之製造方法係依序包含下述步驟: (A)使具備內層基板與接合於該內層基板上之樹脂組成物層的積層體之樹脂組成物層熱硬化,形成玻璃轉移溫度為T 1(℃)之絕緣層的步驟, (B)於T 2(℃)加熱處理絕緣層之步驟,及 (C)以氧化劑溶液將絕緣層進行去膠渣處理之步驟, 樹脂組成物層包含環氧樹脂及活性酯系硬化劑,且 同時滿足下述式(1)及(2), -20≦T 1-T 2≦20   (1) 60≦T 2≦150     (2)。 此處,「≦」表示左邊數值為右邊數值以下之數值。 <Manufacturing Method of Printed Wiring Board> The manufacturing method of the printed wiring board of the present invention includes the following steps in order: (A) making a laminated body including an inner layer substrate and a resin composition layer bonded to the inner layer substrate The step of thermally hardening the resin composition layer to form an insulating layer with a glass transition temperature of T 1 (°C), (B) the step of heat-treating the insulating layer at T 2 (°C), and (C) treating the insulating layer with an oxidant solution In the step of desmearing treatment, the resin composition layer contains epoxy resin and active ester hardener, and satisfies the following formulas (1) and (2) at the same time, -20≦T 1 -T 2 ≦20 (1) 60 ≦T 2 ≦150 (2). Here, "≦" indicates that the value on the left is lower than the value on the right.

根據該等製造方法,可抑制去膠渣處理(粗化處理)後之龜裂發生。此推測係因於絕緣層形成後,藉由將絕緣層在其玻璃轉移溫度T 1(℃)附近(±20℃以內)的溫度T 2(℃)加熱處理,藉由樹脂組成物層之熱硬化將積蓄於絕緣層內部之應力緩慢釋放者。 According to these production methods, the generation of cracks after the desmear treatment (roughening treatment) can be suppressed. This is presumed to be due to the fact that after the insulating layer is formed, by heating the insulating layer at a temperature T 2 (°C) near its glass transition temperature T 1 (°C) (within ±20°C), the heat of the resin composition layer Hardening slowly releases the stress accumulated inside the insulating layer.

以下,針對本發明之印刷配線板之製造方法之各步驟加以說明。Hereinafter, each step of the manufacturing method of the printed wiring board of this invention is demonstrated.

<(A)步驟> (A)步驟係使具備內層基板與接合於該內層基板上之樹脂組成物層的積層體之樹脂組成物層熱硬化,形成玻璃轉移溫度為T 1(℃)之絕緣層的步驟。 <(A) Step> (A) Step is to thermally harden the resin composition layer of the laminated body including the inner substrate and the resin composition layer bonded to the inner substrate to form a glass transition temperature T 1 (°C) The steps of the insulating layer.

(A)步驟較佳依序包含下述(A-1)~(A-3)步驟。 (A-1)準備具備支撐體與設於該支撐體上之樹脂組成物層的樹脂薄片之步驟 (A-2)以使樹脂組成物層與內層基板接合之方式積層樹脂薄片,獲得積層體之步驟 (A-3)使樹脂組成物層熱硬化,形成玻璃轉移溫度為T 1(℃)之絕緣層之步驟。 The step (A) preferably includes the following steps (A-1) to (A-3) in sequence. (A-1) Step (A-2) of preparing a resin sheet having a support and a resin composition layer provided on the support by laminating the resin sheet so that the resin composition layer and the inner substrate are bonded to obtain a laminate The step (A-3) of forming the resin composition layer by thermosetting to form an insulating layer having a glass transition temperature of T 1 (°C).

(A-1)步驟係準備具備支撐體與設於該支撐體上之樹脂組成物層的樹脂薄片。The (A-1) step is to prepare a resin sheet including a support and a resin composition layer provided on the support.

樹脂薄片例如可藉由使用模嘴塗佈機等之塗佈裝置將清漆狀的樹脂組成物塗佈於支撐體上,進而根據需要予以乾燥形成樹脂組成物而製造。The resin sheet can be produced by, for example, coating a varnish-like resin composition on a support using a coating device such as a die coater, and drying it as necessary to form a resin composition.

乾燥可藉由加熱、熱風吹拂等之習知方法實施。乾燥條件未特別限定,但係乾燥至使樹脂組成物層中之有機溶劑之含量為10質量%以下,較佳為5質量%以下。雖根據清漆狀的樹脂組成物中之有機溶劑之沸點而異,但例如於使用包含30質量%~60質量%的有機溶劑之樹脂組成物之情況,藉由以50℃~150℃(較佳為80~120℃)乾燥1分鐘~10分鐘,可形成樹脂組成物層。Drying can be carried out by conventional methods such as heating and blowing hot air. The drying conditions are not particularly limited, but they are dried until the content of the organic solvent in the resin composition layer is 10% by mass or less, preferably 5% by mass or less. Although it varies depending on the boiling point of the organic solvent in the varnish-like resin composition, for example, in the case of using a resin composition containing an organic solvent of 30% by mass to 60% by mass, by boiling at 50°C to 150°C (preferably (80-120°C) for 1-10 minutes to form a resin composition layer.

作為用於樹脂薄片之支撐體,可舉例例如由塑膠材料所成之薄膜、金屬箔、脫模紙,較佳為由塑膠材料所成之薄膜、金屬箔。Examples of the support used for the resin sheet include films, metal foils, and release paper made of plastic materials, preferably films and metal foils made of plastic materials.

作為支撐體使用由塑膠材料所成之薄膜之情況,作為塑膠材料,可舉例例如聚對苯二甲酸乙二酯(以下簡稱「PET」)、聚萘二甲酸乙二酯(以下簡稱「PEN」)等之聚酯、聚碳酸酯(以下簡稱「PC」)、聚甲基丙烯酸甲酯(PMMA)等之丙烯酸系、環狀聚烯烴、三乙醯纖維素(TAC)、聚醚硫醚(PES)、聚醚酮、聚醯亞胺等。其中,較佳為聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯,特佳為便宜的聚對苯二甲酸乙二酯。When a film made of plastic material is used as the support, examples of the plastic material include polyethylene terephthalate (hereinafter referred to as "PET"), polyethylene naphthalate (hereinafter referred to as "PEN"), and polyethylene terephthalate (hereinafter referred to as "PEN"). ) and other polyesters, polycarbonate (hereinafter referred to as "PC"), polymethyl methacrylate (PMMA) and other acrylics, cyclic polyolefins, triacetyl cellulose (TAC), polyether sulfide ( PES), polyether ketone, polyimide, etc. Among them, polyethylene terephthalate and polyethylene naphthalate are preferred, and inexpensive polyethylene terephthalate is particularly preferred.

作為支撐體使用金屬箔之情況,作為金屬箔,可舉例例如銅箔、鋁箔等,較佳為銅箔。作為銅箔,可使用由銅之單金屬所成之箔,亦可使用由銅及其他金屬(例如錫、鉻、銀、鎂、鎳、鋯、矽、鈦等)之合金所成之箔。When using a metal foil as a support body, as a metal foil, copper foil, an aluminum foil, etc. are mentioned, for example, Copper foil is preferable. As the copper foil, a foil made of a single metal of copper can be used, and a foil made of an alloy of copper and other metals (such as tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.) can be used.

支撐體可於與樹脂組成物層接合之面實施粗化處理、電暈處理、抗靜電處理。The surface of the support that is bonded to the resin composition layer can be subjected to roughening treatment, corona treatment, and antistatic treatment.

又,作為支撐體,可使用於與樹脂組成物層接合之面具有脫模層之附脫模層支撐體。作為附脫模層支撐體之脫模層所用之脫模劑,可舉例例如選自醇酸樹脂、聚烯烴樹脂、胺基甲酸酯樹脂及矽氧樹脂所成之群中之1種以上的脫模劑。附脫模層之支撐體,可使用市售品,可舉例例如,具有以醇酸樹脂系脫模劑為主成分之脫模層之PET薄膜、LINTEC公司製之「SK-1」、「AL-5」、「AL-7」、TORAY公司製之「LUMIRROR T60」、帝人公司製之「PUREX」、UNITIKA公司製之「UNIPEEL」等。Moreover, as a support body, the support body with a release layer which has a release layer on the surface bonded to a resin composition layer can be used. As the release agent used for the release layer of the support body with release layer, for example, one or more selected from the group consisting of alkyd resin, polyolefin resin, urethane resin and silicone resin Release agent. As the supporting body with a release layer, commercially available products can be used, for example, PET film having a release layer mainly composed of an alkyd resin release agent, "SK-1" manufactured by Lintec Corporation, "AL -5", "AL-7", "LUMIRROR T60" manufactured by TORAY Corporation, "PUREX" manufactured by Teijin Corporation, "UNIPEEL" manufactured by UNITIKA Corporation, etc.

作為支撐體之厚度,未特別限定,但較佳為5μm~75μm之範圍,更佳為10μm~60μm之範圍。且,使用附脫模層支撐體之情況,附脫模層支撐體全體之厚度較佳為於上述範圍。The thickness of the support is not particularly limited, but is preferably in the range of 5 μm to 75 μm, more preferably in the range of 10 μm to 60 μm. Moreover, when using the support body with a release layer, it is preferable that the thickness of the whole support body with a release layer is in the said range.

樹脂薄片中,於樹脂組成物層之未與支撐體接合之面(亦即,與支撐體相反側之面),可進而積層以支撐體為準之保護膜。保護膜之厚度,未特別限定,但例如為1μm~40μm。藉由積層保護膜,可防止於樹脂組成物層之表面附著灰塵等及刮傷。該等樹脂薄膜可捲繞成捲筒狀保存。樹脂薄片具有保護膜之情況,將保護膜剝離後,積層至內層基板。In the resin sheet, a protective film based on the support can be further laminated on the surface of the resin composition layer that is not bonded to the support (that is, the surface opposite to the support). The thickness of the protective film is not particularly limited, but is, for example, 1 μm to 40 μm. By laminating the protective film, it is possible to prevent dust and scratches from adhering to the surface of the resin composition layer. These resin films can be wound into rolls and stored. When the resin sheet has a protective film, the protective film is peeled off and laminated on the inner substrate.

(A-2)步驟係以將樹脂組成物層內層基板接合之方式積層樹脂薄片,獲得積層體。In the step (A-2), the resin sheets are laminated so as to join the resin composition layer inner layer substrate to obtain a laminate.

所謂內層基板係作為印刷配線板的基板之構件,可舉例例如玻璃環氧基板、金屬基板、聚酯基板、聚醯亞胺基板、BT樹脂基板、熱硬化型聚苯醚基板等。又,該基板可於其單面或兩面具有導體層,該導體層亦可進行圖型化加工。又製造印刷配線板時,進而應形成絕緣層及/或導體層之中間製造物亦包含於內層基板。印刷配線板為零件內建電路板之情況,可使用內建零件之內層基板。The so-called inner substrate is a component used as the substrate of the printed wiring board, such as glass epoxy substrate, metal substrate, polyester substrate, polyimide substrate, BT resin substrate, thermosetting polyphenylene ether substrate, etc. In addition, the substrate may have a conductive layer on one or both sides thereof, and the conductive layer may also be patterned. In addition, when manufacturing a printed wiring board, an intermediate product that should further form an insulating layer and/or a conductive layer is also included in the inner layer substrate. When the printed wiring board is a circuit board with built-in parts, the inner layer substrate of the built-in parts can be used.

樹脂組成物層以與內層基板接合之方式,於內層基板積層樹脂薄片,獲得積層體。一實施形態中,內層基板與樹脂薄片之積層,可藉由例如自支撐體側將樹脂薄片加熱壓著至內層基板而進行。作為將樹脂薄片加熱壓著至內層基板之構件(以下稱「加熱壓著構件」),可舉例例如經加熱之金屬板(SUS鏡板等)或金屬輥(SUS輥)等。且,並非將加熱壓著構件直接加壓至樹脂薄片,而是較佳以使樹脂薄片充分追隨內層基板之表面凹凸之方式,介隔耐熱像膠等之彈性而加壓。The resin composition layer is bonded to the inner substrate, and the resin sheet is laminated on the inner substrate to obtain a laminate. In one embodiment, the lamination of the inner layer substrate and the resin sheet can be performed, for example, by heat-pressing the resin sheet to the inner layer substrate from the side of the support. As the member for heat-pressing the resin sheet to the inner layer substrate (hereinafter referred to as "heat-pressing member"), for example, a heated metal plate (SUS mirror plate, etc.) or a metal roll (SUS roll) can be exemplified. In addition, instead of directly applying pressure to the resin sheet by the heat-pressing member, it is preferable to press through the elasticity of heat-resistant adhesive or the like so that the resin sheet can fully follow the surface irregularities of the inner substrate.

內層基板與樹脂薄片之積層可藉由真空積層法實施。真空積層法中,加熱壓著溫度較佳為60℃~160℃,更佳為80℃~140℃之範圍,加熱壓著壓力較佳為0.098MPa~1.77MPa,更佳為0.29MPa~1.47MPa之範圍,加熱壓著時間較佳為10秒~400秒,更佳為20秒~300秒之範圍。The lamination of the inner substrate and the resin sheet can be carried out by vacuum lamination. In the vacuum lamination method, the heating and pressing temperature is preferably in the range of 60°C~160°C, more preferably in the range of 80°C~140°C, and the heating pressing pressure is preferably in the range of 0.098MPa~1.77MPa, more preferably 0.29MPa~1.47MPa The heating and pressing time is preferably in the range of 10 seconds to 400 seconds, more preferably in the range of 20 seconds to 300 seconds.

積層可藉由市售之真空積層機進行。作為市售之真空積層機,可舉例例如名機製作所公司製之真空加壓式積層機、NIKKO‧MATERIALS公司製之真空屠夫機、批式真空加壓積層機等。Lamination can be performed by a commercially available vacuum lamination machine. As a commercially available vacuum laminator, for example, a vacuum pressure laminator manufactured by Meiki Seisakusho Co., Ltd., a vacuum butcher manufactured by NIKKO‧Materials Co., Ltd., a batch type vacuum pressure laminator, etc. may be exemplified.

於積層之後,亦可於常壓下(大氣壓下),例如藉由將加熱壓著構件自支撐體側加壓,進行經積層之樹脂薄片的平滑化處理。平滑化處理之加壓條件可為與上述積層之加熱壓著條件相同之條件。平滑化處理可藉由市售之積層機進行。且,積層與平滑化處理亦可使用上述之真空積層機連續進行。After lamination, the smoothing treatment of the laminated resin sheet can also be performed under normal pressure (atmospheric pressure), for example, by pressing a heated pressing member from the support side. The pressure conditions of the smoothing treatment may be the same conditions as the above-mentioned heating and pressing conditions of the laminate. The smoothing treatment can be performed with a commercially available lamination machine. In addition, lamination and smoothing can also be performed continuously using the above-mentioned vacuum lamination machine.

(A-3)步驟係使樹脂組成物層熱硬化,形成玻璃轉移溫度為T 1(℃)之絕緣層。 (A-3) The step is to heat-cure the resin composition layer to form an insulating layer with a glass transition temperature of T 1 (°C).

樹脂組成物層之硬化加熱溫度係根據樹脂組成物之種類而異,但較佳為100℃以上,更佳為150℃以上,又更佳為160℃以上。上限較佳為220℃以下,更佳為210℃以下,又更佳為200℃以下。The curing heating temperature of the resin composition layer varies depending on the type of the resin composition, but is preferably at least 100°C, more preferably at least 150°C, and still more preferably at least 160°C. The upper limit is preferably at most 220°C, more preferably at most 210°C, and still more preferably at most 200°C.

樹脂組成物層之硬化加熱時間係根據樹脂組成物之種類而異,但較佳為5分鐘以上,更佳為10分鐘以上,又更佳為15分鐘以上,上限未特別限定,但較佳為120分鐘以下,更佳為100分鐘以下,又更佳為90分鐘以下。所謂樹脂組成物層之硬化加熱時間,意指維持樹脂組成物層之硬化加熱溫度的時間。熱硬化通常於氣體(例如空氣、氬氣、氮氣或該等之混合氣體)環境下進行,於例如0.05MPa~0.15MPa,較佳0.08~0.12MPa之壓力下進行。The hardening and heating time of the resin composition layer varies according to the type of the resin composition, but is preferably at least 5 minutes, more preferably at least 10 minutes, and more preferably at least 15 minutes. The upper limit is not particularly limited, but is preferably 120 minutes or less, more preferably 100 minutes or less, and more preferably 90 minutes or less. The curing heating time of the resin composition layer means the time for maintaining the curing heating temperature of the resin composition layer. Thermal hardening is usually carried out in a gas (such as air, argon, nitrogen or the mixed gas) environment, for example, at a pressure of 0.05MPa~0.15MPa, preferably 0.08~0.12MPa.

(A-3)之步驟較佳依序包含下述(A-31)步驟及(A-32)步驟。 (A-31)將樹脂組成物層於較硬化加熱溫度低的預備加熱溫度予以預備加熱之步驟,及 (A-32)將樹脂組成物層於硬化加熱溫度加熱,使樹脂組成物層熱硬化,形成玻璃轉移溫度為T 1(℃)之絕緣層之步驟。 The step of (A-3) preferably includes the following steps of (A-31) and (A-32) in this order. (A-31) A step of preheating the resin composition layer at a preliminary heating temperature lower than the curing heating temperature, and (A-32) heating the resin composition layer at a curing heating temperature to thermally harden the resin composition layer , a step of forming an insulating layer with a glass transition temperature of T 1 (°C).

作為樹脂組成物層之預備加熱溫度,較佳為50℃以上,更佳為100℃以上,又更佳為120℃以上,較佳為160℃以下,更佳為150℃以下,又更佳為140℃以下。作為樹脂組成物之預備加熱時間,較佳為5分鐘以上,更佳為10分鐘以上,又更佳為15分鐘以上,較佳為150分鐘以下,更佳為130分鐘以下,又更佳為120分鐘以下。預備加熱通常於氣體(例如空氣、氬氣、氮氣或該等之混合氣體)環境下進行,於例如0.05MPa~0.15MPa,較佳0.08~0.12 MPa之壓力下進行。The preliminary heating temperature for the resin composition layer is preferably at least 50°C, more preferably at least 100°C, more preferably at least 120°C, preferably at most 160°C, more preferably at most 150°C, and more preferably at least 150°C. Below 140°C. The preheating time for the resin composition is preferably at least 5 minutes, more preferably at least 10 minutes, more preferably at least 15 minutes, more preferably at most 150 minutes, more preferably at most 130 minutes, and more preferably at least 120 minutes. minutes or less. Preliminary heating is usually carried out in a gas (such as air, argon, nitrogen or a mixture thereof) environment, for example, at a pressure of 0.05MPa~0.15MPa, preferably 0.08~0.12MPa.

藉由熱硬化形成之絕緣層之玻璃轉移溫度(T 1),基於絕緣層之耐熱性之觀點,較佳為60(℃)以上,更佳為70(℃)以上,又更佳為80(℃)以上,再更佳為90(℃)以上,又再更佳為100(℃)以上,特佳為110(℃)以上,上限未特別限定,但較佳為160(℃)以下,更佳為150(℃)以下。 The glass transition temperature (T 1 ) of the insulating layer formed by thermosetting is preferably 60 (°C) or higher, more preferably 70 (°C) or higher, and still more preferably 80 (°C) from the viewpoint of heat resistance of the insulating layer. °C), more preferably above 90 (°C), more preferably above 100 (°C), especially preferably above 110 (°C), the upper limit is not particularly limited, but is preferably below 160 (°C), more preferably It is preferably below 150 (°C).

於(A-31)步驟與(A-32)步驟之間,不回到室溫(較佳自預備加熱溫度至硬化加熱溫度直接升溫),可連續加熱,或亦可於(A-31)步驟後(A-32)步驟前,進而包含(A-33)將絕緣層冷卻至30℃以下之步驟。(A-33)步驟之冷卻溫度,較佳為10℃~30℃,更佳為20℃~30℃。冷卻方法未特別限定,可將絕緣層放冷,對絕緣層吹拂冷風之方法,亦可藉由將絕緣層抵壓至冷卻輥之方法予以冷卻。(A-33)步驟之冷卻通常於氣體(例如空氣、氬氣、氮氣或該等之混合氣體)環境下進行,於例如0.05MPa~0.15MPa,較佳0.08~0.12MPa之壓力下進行。Between (A-31) step and (A-32) step, do not return to room temperature (preferably directly increase the temperature from the preliminary heating temperature to the hardening heating temperature), can continue to heat, or can also be in (A-31) After the step (A-32) before the step, it further includes the step of (A-33) cooling the insulating layer to 30° C. or lower. The cooling temperature in the step (A-33) is preferably 10°C to 30°C, more preferably 20°C to 30°C. The cooling method is not particularly limited, and the insulating layer may be left to cool, blowing cold air on the insulating layer, or pressing the insulating layer against a cooling roller to cool. (A-33) The cooling in step (A-33) is usually carried out in a gas (such as air, argon, nitrogen or the mixed gas) environment, for example, at a pressure of 0.05MPa~0.15MPa, preferably 0.08~0.12MPa.

藉由(A-3)步驟之熱硬化形成之絕緣層之厚度,依存於所準備之樹脂薄片的樹脂組成物層之厚度,但例如為200μm以下,較佳為100μm以下,更佳為80μm以下,又更佳為60μm以下,特佳為50μm以下,下限未特別限定,通常為1μm以上、5μm以上、10μm以上等。The thickness of the insulating layer formed by thermosetting in step (A-3) depends on the thickness of the resin composition layer of the prepared resin sheet, but is, for example, 200 μm or less, preferably 100 μm or less, more preferably 80 μm or less , and more preferably 60 μm or less, particularly preferably 50 μm or less, the lower limit is not particularly limited, usually 1 μm or more, 5 μm or more, 10 μm or more, and the like.

(A)步驟較佳為於(A-3)步驟後,進而包含(A-4)將絕緣層冷卻至30℃以下之步驟。The step (A) is preferably after the step (A-3), and further includes the step of (A-4) cooling the insulating layer to below 30°C.

藉由進行(A-4)步驟,可抑制因樹脂組成物之熱硬化產生之應力變得過剩。因此,可更抑制於(B)步驟中於絕緣層之應力殘留,且可有效抑制龜裂發生。(A-4)步驟之冷卻溫度較佳為10℃~30℃,更佳為20℃~30℃。冷卻之方法未特別限定,可將絕緣層放冷,對絕緣層吹拂冷風之方法,亦可藉由將絕緣層抵壓至冷卻之輥之方法等予以冷卻。(A-4)步驟之冷卻通常於氣體(例如空氣、氬氣、氮氣或該等之混合氣體)環境下進行,例如於0.05MPa~0.15MPa,較佳0.08~0.12MPa之壓力下進行。By carrying out the step (A-4), it is possible to suppress excessive stress due to thermosetting of the resin composition. Therefore, the stress remaining in the insulating layer in the step (B) can be further suppressed, and the occurrence of cracks can be effectively suppressed. The cooling temperature in the step (A-4) is preferably from 10°C to 30°C, more preferably from 20°C to 30°C. The method of cooling is not particularly limited, and cooling may be performed by cooling the insulating layer, blowing cold air on the insulating layer, or pressing the insulating layer against a cooling roller. The cooling in step (A-4) is usually carried out in a gas (such as air, argon, nitrogen or a mixture thereof) environment, for example, at a pressure of 0.05MPa~0.15MPa, preferably 0.08~0.12MPa.

(A)步驟較佳進而包含(A-5)對絕緣層或樹脂組成物層開孔之步驟。(A-5)步驟例如可包含於(A-31)步驟後(但包含(A-33)步驟時較佳於(A-33)步驟後)(A-32)步驟前,或(A-3)步驟後(但包含(A-4)步驟時較佳於(A-4)步驟後)。The (A) step preferably further includes (A-5) the step of opening holes in the insulating layer or the resin composition layer. (A-5) step, for example, can be included after (A-31) step (but preferably after (A-33) step when including (A-33) step) before (A-32) step, or (A- 3) after step (but preferably after (A-4) step when (A-4) step is included).

(A-5)步驟可依照印刷配線板之製造所用之本技藝者習知之各種方法實施。藉由(A-5)步驟,可對絕緣層(樹脂組成物)形成通孔、穿孔。(A-5)步驟例如可使用鑽孔、雷射(CO 2(二氧化碳氣體)雷射、YAG雷射等)、電漿等實施。(A-5)步驟較佳使用雷射實施。 (A-5) The process can be implemented according to various methods well-known to those skilled in the art for the manufacture of a printed wiring board. Through the step (A-5), through holes and perforations can be formed in the insulating layer (resin composition). The step (A-5) can be performed using, for example, drilling, laser (CO 2 (carbon dioxide gas) laser, YAG laser, etc.), plasma, or the like. The step (A-5) is preferably carried out using a laser.

藉由(A-5)步驟形成之孔(通孔、穿孔),可為貫通絕緣層(樹脂組成物)之形態。藉由(A-5)步驟形成之孔(通孔、穿孔)之形狀未特別限定,但可為例如圓形(略圓形)。藉由(A-5)步驟形成之孔(通孔、穿孔)可包含其孔頂徑為例如100μm以下,較佳70μm以下,更佳50μm以下,又更佳40μm以下者。此處所謂通孔之孔頂徑意指於絕緣層之表面(未與內層基板接合之側)的通孔之開口直徑。The hole (through hole, through hole) formed in the step (A-5) may be in the form of penetrating the insulating layer (resin composition). The shape of the hole (through hole, perforation) formed by the step (A-5) is not particularly limited, but may be, for example, circular (slightly circular). The holes (via holes, through holes) formed in the step (A-5) may include those whose top diameter is, for example, 100 μm or less, preferably 70 μm or less, more preferably 50 μm or less, and more preferably 40 μm or less. Here, the top diameter of the through hole refers to the opening diameter of the through hole on the surface of the insulating layer (the side not connected to the inner substrate).

<(B)步驟> (B)步驟係以T 2(℃)加熱處理絕緣層。藉由進行(B)步驟,可抑制於(C)步驟後發生之龜裂發生。推測此係因可緩和依存於內層基板之圖型形狀的應力。 <(B) step> (B) step is to heat-treat the insulating layer at T 2 (° C.). By carrying out the step (B), the occurrence of cracks occurring after the step (C) can be suppressed. It is speculated that this is because the stress dependent on the pattern shape of the inner substrate can be relaxed.

(B)步驟之加熱處理溫度(T 2)較佳為較(A)步驟中之樹脂組成物層之硬化加熱溫度低的溫度。作為加熱處理溫度(T 2),為60(℃)以上150(℃)以下,基於進一步抑制龜裂發生之觀點,較佳為70(℃)以上,更佳為80(℃)以上,又更佳為90(℃)以上,特佳為100(℃)以上。 The heat treatment temperature (T 2 ) in the (B) step is preferably a temperature lower than the curing heating temperature of the resin composition layer in the (A) step. The heat treatment temperature (T 2 ) is not less than 60 (°C) and not more than 150 (°C). From the viewpoint of further suppressing the occurrence of cracks, it is preferably at least 70 (°C), more preferably at least 80 (°C), and still more Preferably it is 90 (°C) or higher, particularly preferably 100 (°C) or higher.

絕緣層之玻璃轉移溫度(T 1)與加熱處理溫度(T 2)之值的差(T 1-T 2),為20(℃)以下,較佳為15(℃)以下,更佳為10(℃)以下,特佳為5(℃)以下,T 1-T 2之下限,為 -20(℃)以上,較佳為-15(℃)以上,更佳為-10(℃)以上,又更佳為-5(℃)以上,特佳為0(℃)以上。 The difference (T 1 -T 2 ) between the glass transition temperature (T 1 ) and the heat treatment temperature (T 2 ) of the insulating layer is not more than 20 (°C), preferably not more than 15 (°C), more preferably not more than 10 (°C) or less, preferably less than 5 (°C), the lower limit of T 1 -T 2 is above -20 (°C), preferably above -15 (°C), more preferably above -10 (°C), More preferably, it is -5 (°C) or higher, and particularly preferably, it is 0 (°C) or higher.

(B)步驟之加熱處理時間,基於抑制龜裂發生之觀點,較佳為1分鐘以上,更佳為10分鐘以上,又更佳為20分鐘以上,上限未特別限定,但可為例如120分鐘以下、90分鐘以下等。所謂加熱處理時間意指維持加熱處理溫度之時間。The heat treatment time of the (B) step is preferably at least 1 minute, more preferably at least 10 minutes, and more preferably at least 20 minutes from the viewpoint of suppressing the occurrence of cracks. The upper limit is not particularly limited, but may be, for example, 120 minutes less than, less than 90 minutes, etc. The heat treatment time means the time for maintaining the heat treatment temperature.

(B)步驟之加熱處理,可藉由於氣體環境下加熱絕緣層進行,亦可藉由於液體中浸漬絕緣層加熱絕緣層進行,但較佳為藉由於氣體環境下加熱絕緣體進行。加熱處理係於例如0.05MPa~0.15MPa,較佳於0.08~0.12MPa之壓力下進行。The heat treatment in step (B) may be performed by heating the insulating layer in a gas environment, or by immersing the insulating layer in a liquid to heat the insulating layer, but is preferably performed by heating the insulator in a gas environment. The heat treatment is performed under a pressure of, for example, 0.05MPa~0.15MPa, preferably 0.08~0.12MPa.

作為於氣體環境下加熱時所用之氣體,可使用空氣、氬氣、氮氣或該等之混合氣體。Air, argon, nitrogen, or a mixed gas thereof can be used as the gas used for heating in a gas environment.

作為於液體中加熱時所用之液體,可使用沸點為加熱處理溫度(T 2)以上之液體。作為該等液體,可使用例如下述說明之膨潤液。使用膨潤液時,較佳為將其加熱溫度設定至加熱處理溫度(T 2),其pH較佳為6以上,更佳為6.5以上,又更佳為7以上,較佳為14以下,更佳為13.5以下、12以下、12.5以下、11以下、10以下、8以下、7.5以下。 As the liquid used for heating in a liquid, a liquid having a boiling point equal to or higher than the heat treatment temperature (T 2 ) can be used. As such liquids, for example, swelling liquids described below can be used. When using swelling liquid, it is preferable to set its heating temperature to the heat treatment temperature (T 2 ), and its pH is preferably above 6, more preferably above 6.5, more preferably above 7, preferably below 14, and more preferably Preferably, it is 13.5 or less, 12 or less, 12.5 or less, 11 or less, 10 or less, 8 or less, and 7.5 or less.

(B)步驟於以T 2(℃)加熱處理絕緣層後,亦可包含將絕緣層冷卻至30℃以下之步驟。該步驟之冷卻溫度較佳為10℃~30℃,更佳為20℃~30℃。冷卻之方法未特別限定,但可將絕緣層放冷,對絕緣層吹拂冷風之方法,亦可藉由將絕緣層抵壓至冷卻之輥之方法予以冷卻。該步驟之冷卻通常於氣體(例如空氣、氬氣、氮氣或該等之混合氣體)環境下進行,例如於0.05MPa~0.15MPa,較佳於0.08~0.12MPa之壓力下進行。 The step (B) may also include the step of cooling the insulating layer to below 30° C. after heat-treating the insulating layer at T 2 (° C.). The cooling temperature in this step is preferably from 10°C to 30°C, more preferably from 20°C to 30°C. The method of cooling is not particularly limited, but the insulation layer can be left to cool, the method of blowing cold air on the insulation layer, or the method of pressing the insulation layer to a cooling roller can be cooled. The cooling in this step is usually carried out under a gas (such as air, argon, nitrogen or a mixture thereof), for example, at a pressure of 0.05MPa~0.15MPa, preferably 0.08~0.12MPa.

加熱處理可僅進行1次,亦可進行2次。進行2次加熱處理時,作為一實施形態,例如可以T 2(℃)進行第1次之絕緣層加熱處理後,將絕緣層冷卻至30℃以下,再以T 2(℃)進行絕緣層之加熱處理。冷卻溫度、冷卻之方法與上述相同。第2次之加熱處理溫度及加熱處理時間亦可與第1次不同。 The heat treatment may be performed only once or twice. When heat treatment is performed twice, as an embodiment, for example, after the first heat treatment of the insulating layer at T 2 (°C), the insulating layer is cooled to below 30°C, and then the insulating layer is heated at T 2 (°C). heat treatment. The cooling temperature and cooling method are the same as above. The heat treatment temperature and heat treatment time of the second time may also be different from the first time.

<(C)步驟> (C)步驟係以氧化劑溶液將絕緣層進行去膠渣處理。去膠渣處理之順序、條件未特別限定,可採用於形成印刷配線板之絕緣層時通常使用之周知順序、條件。去膠渣處理例如可藉由將絕緣層浸漬於氧化劑溶液進行。 <Step (C)> (C) The step is to use an oxidant solution to remove the scum on the insulating layer. The order and conditions of desmear processing are not specifically limited, The well-known order and conditions normally used when forming the insulating layer of a printed wiring board can be employ|adopted. The desmearing treatment can be performed, for example, by immersing the insulating layer in an oxidizing agent solution.

作為氧化劑溶液,可使用通常去膠渣處理所用之氧化劑溶液。作為此等氧化劑溶液,可舉例例如於氫氧化鈉水溶液中溶解有作為氧化劑之過錳酸鉀或過錳酸鈉之鹼性過錳酸溶液。又,作為氧化劑溶液之氧化劑濃度,較佳為3質量%以上,更佳為5質量%以上,又更佳為7質量%以上,較佳為20質量%以下,更佳為15質量%以下,又更佳為10質量%以下。As the oxidizing agent solution, those commonly used in desmearing treatment can be used. As such an oxidizing agent solution, for example, an alkaline permanganic acid solution in which potassium permanganate or sodium permanganate is dissolved in an aqueous sodium hydroxide solution is exemplified. Also, the concentration of the oxidizing agent in the oxidizing agent solution is preferably at least 3% by mass, more preferably at least 5% by mass, more preferably at least 7% by mass, preferably at most 20% by mass, more preferably at most 15% by mass, Furthermore, it is more preferably at most 10% by mass.

氧化劑溶液可使用市售品。作為氧化劑溶液之市售品,可舉例例如日本ATOTECH公司製之「Concentrate Compact CP」、「Doesing Solution Securiganth P」等之鹼性過錳酸溶液。As the oxidizing agent solution, a commercially available product can be used. Examples of commercially available oxidant solutions include alkaline permanganate solutions such as "Concentrate Compact CP" and "Doesing Solution Securiganth P" manufactured by Japan Atotech Co., Ltd.

氧化劑溶液於絕緣層浸漬時較佳加熱而使用。作為氧化劑溶液之加熱溫度,較佳為60℃以上,更佳為65℃以上,又更佳為70℃以上,較佳為100℃以下,更佳為95℃以下,又更佳為90℃以下。The oxidizing agent solution is preferably heated and used during immersion of the insulating layer. The heating temperature of the oxidant solution is preferably at least 60°C, more preferably at least 65°C, more preferably at least 70°C, more preferably at most 100°C, more preferably at most 95°C, and more preferably at most 90°C .

作為絕緣層於氧化劑溶液之浸漬時間,較佳為5分鐘以上,更佳為10分鐘以上,又更佳為15分鐘以上,較佳為40分鐘以下,更佳為30分鐘以下,又更佳為25分鐘以下。The immersion time of the insulating layer in the oxidant solution is preferably at least 5 minutes, more preferably at least 10 minutes, more preferably at least 15 minutes, preferably at least 40 minutes, more preferably at least 30 minutes, and more preferably at least 30 minutes. Under 25 minutes.

於(C)步驟,於將絕緣層以氧化劑溶液去膠渣處理前,亦可將絕緣層浸漬於膨潤液進行膨潤處理。In step (C), before the insulating layer is desmeared with an oxidant solution, the insulating layer may also be soaked in a swelling solution for swelling treatment.

作為膨潤液,可舉例,例如水、氫氧化鈉水溶液、氫氧化鉀水溶液等之膨潤液,其中,較佳為水、膨潤液,更佳為水。膨潤液可使用市售品。作為市售品,可舉例,例如日本ATOTECH公司製「Swelling Dip Securiganth P」、「Swelling Dip Securiganth SBU」等。Examples of swelling liquids include swelling liquids such as water, aqueous sodium hydroxide solution, and aqueous potassium hydroxide solution. Among them, water and swelling liquids are preferable, and water is more preferable. A commercially available product can be used as the swelling liquid. As a commercial item, "Swelling Dip Securiganth P" and "Swelling Dip Securiganth SBU" manufactured by Nippon Atotech Co., Ltd., etc. are mentioned, for example.

膨潤液於絕緣層浸漬時較佳加熱而使用。作為膨潤液之加熱溫度,較佳為30℃以上,更佳為35℃以上,又更佳為40℃以上,較佳為100℃以下,更佳為95℃以下,又更佳為90℃以下。The swelling liquid is preferably used by heating when impregnating the insulating layer. The heating temperature of the swelling liquid is preferably above 30°C, more preferably above 35°C, more preferably above 40°C, preferably below 100°C, more preferably below 95°C, and more preferably below 90°C .

絕緣層於膨潤液之浸漬時間,較佳為1分鐘以上,更佳為3分鐘以上,又更佳為5分鐘以上,較佳為40分鐘以下,更佳為30分鐘以下,又更佳為25分鐘以下。The immersion time of the insulating layer in the swelling solution is preferably at least 1 minute, more preferably at least 3 minutes, more preferably at least 5 minutes, more preferably at least 40 minutes, more preferably at least 30 minutes, and more preferably at least 25 minutes minutes or less.

作為膨潤液之pH,較佳為6以上,更佳為6.5以上,又更佳為7以上,較佳為14以下,更佳為13.5以下、12以下、12.5以下、11以下、10以下、8以下、7.5以下。The pH of the swelling liquid is preferably 6 or more, more preferably 6.5 or more, more preferably 7 or more, preferably 14 or less, more preferably 13.5 or less, 12 or less, 12.5 or less, 11 or less, 10 or less, 8 Below, below 7.5.

於(C)步驟,以氧化劑溶液將絕緣層進行去膠渣處理後,基於去除氧化劑之鹽的殘渣物之觀點,亦可將絕緣層浸漬於中和液進行中和處理。In step (C), after desmearing the insulating layer with an oxidizing agent solution, the insulating layer may also be dipped in a neutralizing solution for neutralization in view of removing the residue of the salt of the oxidizing agent.

作為中和液,較佳為使用酸性之水溶液。中和液可使用市售品,作為中和液之市售品,可舉例例如日本ATOTECH公司製之「Reduction Solution Securiganth P」等。As the neutralizing liquid, it is preferable to use an acidic aqueous solution. As the neutralizing solution, a commercially available product may be used, and examples of the commercially available neutralizing solution include "Reduction Solution Securiganth P" manufactured by ATOTECH Corporation in Japan.

中和液於絕緣層浸漬時較佳加熱而使用。作為中和液之加熱溫度,基於去除氧化劑之鹽的殘渣物等之觀點,較佳為30℃以上,更佳為35℃以上,較佳為80℃以下,更佳為70℃以下,又更佳為60℃以下。The neutralizer is preferably used by heating when the insulating layer is impregnated. The heating temperature of the neutralizing solution is preferably 30°C or higher, more preferably 35°C or higher, preferably 80°C or lower, more preferably 70°C or lower, from the viewpoint of removing oxidant salt residues, etc. It is preferably below 60°C.

絕緣層於中和液之浸漬時間,基於去除氧化劑之鹽的殘渣物等之觀點,較佳為1分鐘以上,更佳為3分鐘以上,較佳為30分鐘以下,更佳為20分鐘以下。The immersion time of the insulating layer in the neutralizing solution is preferably 1 minute or more, more preferably 3 minutes or more, preferably 30 minutes or less, more preferably 20 minutes or less, from the viewpoint of removing oxidant salt residues and the like.

於(C)步驟,於以氧化劑溶液將絕緣層進行去膠渣處理(任意將絕緣層浸漬於中和液進行中和處理)後,亦可於大氣中進行乾燥。In the step (C), after desmearing the insulating layer with an oxidant solution (optionally dipping the insulating layer in a neutralizing solution for neutralization), drying can also be performed in the atmosphere.

作為乾燥時溫度,較佳為40℃以上,更佳為60℃以上,較佳為120℃以下,更佳為100℃以下。作為乾燥時間,較佳為10分鐘以上,更佳為20分鐘以上,較佳為60分鐘以下,更佳為40分鐘以下。The drying temperature is preferably at least 40°C, more preferably at least 60°C, preferably at most 120°C, more preferably at most 100°C. The drying time is preferably at least 10 minutes, more preferably at least 20 minutes, preferably at most 60 minutes, more preferably at most 40 minutes.

<(D)步驟> 本發明之印刷配線板之製造方法,於(C)步驟後,可進而包含(D)於絕緣層之表面形成導體層之步驟。 <Step (D)> The manufacturing method of the printed wiring board of the present invention may further include (D) the step of forming a conductor layer on the surface of the insulating layer after the (C) step.

(D)步驟中之導體層中使用之導體材料未特別限定。於較佳實施形態中,導體層包含選自由金、鉑、鈀、銀、銅、鋁、鈷、鉻、鋅、鎳、鈦、鎢、鐵、錫及銦所成之群中之1種以上的金屬。導體層可為單金屬層亦可為合金層,作為合金層,可舉例例如由選自上述之群之2種以上的金屬之合金(例如,鎳‧鉻合金、銅‧鎳合金及銅‧鈦合金)形成之層。其中,基於導體層之形成容易性、成本、圖型加工之容易性等之觀點,較佳為鉻、鎳、鈦、鋁、鋅、金、鈀、銀或銅之單金屬層,或鎳‧鉻合金、銅‧鎳合金、銅‧鈦合金之合金層,更佳為鉻、鎳、鈦、鋁、鋅、金、鈀、銀或銅之單金屬層,或鎳‧鉻合金之合金層,更佳為銅之單金屬層。The conductive material used in the conductive layer in the step (D) is not particularly limited. In a preferred embodiment, the conductor layer contains at least one selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin, and indium Metal. The conductor layer can be a single metal layer or an alloy layer. As the alloy layer, for example, an alloy of two or more metals selected from the above-mentioned group (for example, nickel‧chromium alloy, copper‧nickel alloy and copper‧titanium alloy) alloy) formed layer. Among them, based on the viewpoints of ease of formation, cost, and pattern processing of the conductor layer, a single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver, or copper, or nickel‧ The alloy layer of chromium alloy, copper‧nickel alloy, copper‧titanium alloy, more preferably a single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper, or an alloy layer of nickel‧chromium alloy, More preferably a single metal layer of copper.

導體層可為單層構造,亦可為由不同種類之金屬或合金所成之單金屬層或合金層積層2層以上之複層構造。導體層為複層構造之情況,與絕緣體相接之層,較佳為鉻、鋅或鈦之單金屬層,或鎳‧鉻合金之合金層。The conductor layer can be a single-layer structure, or it can be a multi-layer structure of a single metal layer or an alloy laminated layer of two or more layers made of different types of metals or alloys. When the conductor layer has a multi-layer structure, the layer in contact with the insulator is preferably a single metal layer of chromium, zinc or titanium, or an alloy layer of nickel-chromium alloy.

導體層之厚度,雖根據期望之印刷配線板設計而定,但一般為3μm~35μm,較佳為5μm~30μm。Although the thickness of the conductor layer depends on the desired printed wiring board design, it is generally 3 μm to 35 μm, preferably 5 μm to 30 μm.

於一實施形態,導體層可藉由鍍敷形成。例如可藉由半加成法、全加成法等之過去習知之技術於絕緣層之表面鍍敷,可形成具有期望配線圖型之導體層,基於製造之簡便性之觀點,較佳為藉由半加成法形成。以下,顯示藉由半加成法形成導體層之例。In one embodiment, the conductive layer can be formed by plating. For example, the surface of the insulating layer can be plated on the surface of the insulating layer by semi-additive method, full-additive method, etc., and a conductor layer with a desired wiring pattern can be formed. Formed by the semi-additive method. Hereinafter, an example of forming a conductor layer by a semi-additive method will be shown.

首先,於絕緣層之表面,藉由無電解鍍敷形成鍍敷種晶層。接著,於形成之鍍敷種晶層上,形成對應於期望之配線圖型使鍍敷種晶層之一部分露出之遮罩圖型。於曝光後之鍍敷種晶層上,藉由電解鍍敷形成金屬層後,去除遮罩圖型。隨後,藉由將不要的鍍敷種晶層蝕刻等去除,可形成具有期望配線圖型之導體層。First, a plating seed layer is formed on the surface of the insulating layer by electroless plating. Next, on the formed plating seed layer, form a mask pattern corresponding to a desired wiring pattern to expose a part of the plating seed layer. On the plating seed layer after exposure, a metal layer is formed by electrolytic plating, and the mask pattern is removed. Subsequently, by etching and removing the unnecessary plating seed layer, a conductor layer having a desired wiring pattern can be formed.

支撐體可於(A)步驟之中途(例如(A-2)步驟與(A-3)步驟之間、(A-2)步驟與(A-3)步驟之間、(A-3)步驟與(A-4)步驟之間,或(A-4)步驟與(A-5)步驟之間),(A)步驟與(B)步驟之間,或(B)步驟與(C)步驟之間去除。支撐體較佳為於(B)步驟及(C)步驟之間去除。又,各步驟結束後,可根據需要進行水洗處理。The support can be placed in the middle of the (A) step (for example, between (A-2) step and (A-3) step, between (A-2) step and (A-3) step, (A-3) step and (A-4) step, or (A-4) step and (A-5) step), between (A) step and (B) step, or (B) step and (C) step removed between. The support body is preferably removed between (B) step and (C) step. Moreover, after completion|finish of each process, you may perform a water washing process as needed.

<樹脂組成物層> 以下,針對積層體中接合於內層基板上之樹脂組成物層(樹脂薄片中設於支撐體上之樹脂組成物層)所含之成分加以說明。 <Resin composition layer> Hereinafter, the components contained in the resin composition layer bonded to the inner substrate in the laminate (the resin composition layer provided on the support in the resin sheet) will be described.

樹脂組成物層包含(a)環氧樹脂及(b)活性酯系硬化劑。The resin composition layer includes (a) epoxy resin and (b) active ester hardener.

<(a)環氧樹脂> (a)環氧樹脂係具有環氧基之硬化性樹脂。此處說明之(a)環氧樹脂係環氧當量5,000g/eq.以下者。 <(a) Epoxy resin> (a) Epoxy resin is a curable resin having an epoxy group. (a) Epoxy resins described here have an epoxy equivalent of 5,000 g/eq. or less.

作為(a)環氧樹脂,可舉例例如聯二甲酚型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、雙酚AF型環氧樹脂、二環戊二烯型環氧樹脂、三酚型環氧樹脂、萘酚酚醛清漆型環氧樹脂、酚酚醛清漆型環氧樹脂、第三丁基-兒茶酚型環氧樹脂、萘型環氧樹脂、萘酚型環氧樹脂、蔥型環氧樹脂、縮水甘油胺型環氧樹脂、縮水甘油酯型環氧樹脂、甲酚酚醛清漆型環氧樹脂、酚芳烷型環氧樹脂、聯苯型環氧樹脂、線狀脂肪族環氧樹脂、具有丁二烯構造之環氧樹脂、脂環式環氧樹脂、雜環式環氧樹脂、含螺環環氧樹脂、環己烷型環氧樹脂、環己烷二甲醇型環氧樹脂、伸萘醚型環氧樹脂、三羥甲基型環氧樹脂、四苯基乙烷型環氧樹脂、異氰尿酸型環氧樹脂、酚鄰苯二甲醯亞胺型環氧樹脂等。(a)環氧樹脂可單獨使用1種,亦可組合2種以上使用。Examples of (a) epoxy resins include bixylenol type epoxy resins, bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, and bisphenol AF type epoxy resins. Resin, dicyclopentadiene type epoxy resin, triphenol type epoxy resin, naphthol novolac type epoxy resin, phenol novolak type epoxy resin, tert-butyl-catechol type epoxy resin, naphthalene Naphthol-type epoxy resin, naphthol-type epoxy resin, onion-type epoxy resin, glycidylamine-type epoxy resin, glycidyl ester-type epoxy resin, cresol novolac-type epoxy resin, phenol arane-type epoxy resin , biphenyl type epoxy resin, linear aliphatic epoxy resin, epoxy resin with butadiene structure, alicyclic epoxy resin, heterocyclic epoxy resin, spiro ring-containing epoxy resin, cyclohexane Type epoxy resin, cyclohexanedimethanol type epoxy resin, pernathyl ether type epoxy resin, trimethylol type epoxy resin, tetraphenylethane type epoxy resin, isocyanuric acid type epoxy resin, Phenol phthalimide type epoxy resin, etc. (a) Epoxy resins may be used alone or in combination of two or more.

樹脂組成物層較佳包含於1分子中具有2個以上環氧基之環氧樹脂作為(a)環氧樹脂。相對於(a)環氧樹脂之不揮發成分100質量%,於1分子中具有2個以上環氧基之環氧樹脂之比例,較佳為50質量%以上,更佳為60質量%以上,特佳為70質量%以上。It is preferable that the resin composition layer contains the epoxy resin which has 2 or more epoxy groups in 1 molecule as (a) epoxy resin. The proportion of the epoxy resin having two or more epoxy groups in one molecule is preferably at least 50 mass %, more preferably at least 60 mass %, relative to 100 mass % of the non-volatile components of the epoxy resin, Most preferably, it is 70% by mass or more.

環氧樹脂有於溫度20℃為液狀之環氧樹脂(以下稱「液狀環氧樹脂」)與於溫度20℃為固體狀之環氧樹脂(以下稱「固體狀環氧樹脂」)。樹脂組成物層中,作為環氧樹脂,可僅包含液狀環氧樹脂,或僅包含固體狀環氧樹脂,或可包含液狀環氧樹脂與固體狀環氧樹脂兩者,但較佳為包含液狀環氧樹脂與固體狀環氧樹脂兩者。There are epoxy resins that are liquid at a temperature of 20°C (hereinafter referred to as "liquid epoxy resin") and epoxy resins that are solid at a temperature of 20°C (hereinafter referred to as "solid epoxy resin"). In the resin composition layer, as the epoxy resin, only liquid epoxy resin may be contained, or only solid epoxy resin may be contained, or both liquid epoxy resin and solid epoxy resin may be contained, but preferably Both liquid epoxy resin and solid epoxy resin are included.

作為液狀環氧樹脂,較佳為於1分子中具有2個以上環氧基之環氧樹脂。As a liquid epoxy resin, the epoxy resin which has 2 or more epoxy groups in 1 molecule is preferable.

作為液狀環氧樹脂,較佳為甘草醇型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚AF型環氧樹脂、萘型環氧樹脂、縮水甘油酯型環氧樹脂、縮水甘油胺型環氧樹脂、酚酚醛清漆型環氧樹脂、具有酯骨架之脂環式環氧樹脂、環己烷二甲醇型環氧樹脂、環狀脂肪族縮水甘油醚、及具有丁二烯構造之環氧樹脂。As the liquid epoxy resin, preferable are glycyrrhizin type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AF type epoxy resin, naphthalene type epoxy resin, glycidyl ester type epoxy resin, glycidylamine type epoxy resin, phenol novolac type epoxy resin, alicyclic epoxy resin with ester skeleton, cyclohexanedimethanol type epoxy resin, cycloaliphatic glycidyl ether, And epoxy resin with butadiene structure.

作為液狀環氧樹脂之聚體例,可舉例NagaseChemtex公司製之「EX-992L」、三菱化學公司製之「YX7400」、DIC公司製之「HP4032」、「HP4032D」、「HP4032SS」(萘型環氧樹脂);三菱化學公司製之「828US」、「828EL」、「825」、「EPICOTE 828EL」(雙酚A型環氧樹脂);三菱化學公司製之「jER807」、「1750」(雙酚F型環氧樹脂);三菱化學公司製之「jER152」(酚酚醛清漆型環氧樹脂);三菱化學公司製之「630」、「630LSD」、「604」(縮水甘油胺型環氧樹脂);ADEKA公司製之「ED-523T」(甘草醇型環氧樹脂);ADEKA公司製之「EP-3950L」、「EP-3980S」(縮水甘油胺型環氧樹脂);ADEKA公司製之「EP-4088S」(二環戊二烯型環氧樹脂);日鐵化學暨材料公司製之「ZX1059」(雙酚A型環氧樹脂及雙酚F型環氧樹脂之混合品);NagaseChemtex公司製之「EX-721」(縮水甘油酯型環氧樹脂);NagaseChemtex公司製之「EX-991L」(含伸烷氧基骨架及丁二烯骨架環氧樹脂);DAICEL公司製之「CELLOXIDE 2021P」(具有酯骨架之脂環式環氧樹脂);DAICEL公司製之「PB-3600」、日本曹達公司製之「JP-100」、「JP-200」、「JP-400」(具有丁二烯構造之環氧樹脂);日鐵化學暨材料公司製之「ZX1658」、「ZX1658GS」(液狀1,4-縮水甘油基環己烷型環氧樹脂);大阪氣體化學公司製之「EG-280」(含茀構造之環氧樹脂);NagaseChemtex公司製之「EX-201」(環狀脂肪族縮水甘油醚)等。Examples of polymers of liquid epoxy resins include "EX-992L" manufactured by Nagase Chemtex Corporation, "YX7400" manufactured by Mitsubishi Chemical Corporation, "HP4032" manufactured by DIC Corporation, "HP4032D", and "HP4032SS" (naphthalene ring epoxy resin); Mitsubishi Chemical Corporation's "828US", "828EL", "825", "EPICOTE 828EL" (bisphenol A epoxy resin); Mitsubishi Chemical Corporation's "jER807", "1750" (bisphenol F type epoxy resin); Mitsubishi Chemical Corporation's "jER152" (phenol novolak type epoxy resin); Mitsubishi Chemical Corporation's "630", "630LSD", "604" (glycidylamine type epoxy resin) "ED-523T" (licyrrhizol-type epoxy resin) manufactured by ADEKA Corporation; "EP-3950L" and "EP-3980S" (glycidylamine-type epoxy resin) manufactured by ADEKA Corporation; "EP-3980S" manufactured by ADEKA Corporation -4088S" (dicyclopentadiene-type epoxy resin); "ZX1059" (mixture of bisphenol A type epoxy resin and bisphenol F type epoxy resin) manufactured by Nippon Steel Chemical and Materials Co., Ltd.; manufactured by Nagase Chemtex Corporation "EX-721" (glycidyl ester type epoxy resin); "EX-991L" (epoxy resin containing alkylene oxide skeleton and butadiene skeleton) manufactured by Nagase Chemtex Corporation; "CELLOXIDE 2021P" manufactured by DAICEL Corporation (alicyclic epoxy resin having an ester skeleton); "PB-3600" manufactured by DAICEL, "JP-100", "JP-200" and "JP-400" manufactured by Nippon Soda Corporation (with butadiene Epoxy resin for structure); "ZX1658" and "ZX1658GS" (liquid 1,4-glycidylcyclohexane type epoxy resin) manufactured by Nippon Steel Chemical & Materials Co., Ltd.; "EG- 280" (epoxy resin containing fennel structure); "EX-201" (cyclic aliphatic glycidyl ether) manufactured by Nagase Chemtex Co., Ltd., etc.

作為固體狀環氧樹脂,較佳為於1分子中具有3個以上環氧基之固體狀環氧樹脂,更佳為1分子中具有3個以上環氧基之芳香族系之固體狀環氧樹脂。The solid epoxy resin is preferably a solid epoxy resin having three or more epoxy groups in one molecule, more preferably an aromatic solid epoxy resin having three or more epoxy groups in one molecule. resin.

作為固體狀環氧樹脂,較佳為聯二酚型環氧樹脂、萘型環氧樹脂、萘型4官能環氧樹脂、萘酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、二環戊二烯型環氧樹脂、三酚型環氧樹脂、萘酚型環氧樹脂、聯苯型環氧樹脂、伸萘醚型環氧樹脂、蒽型環氧樹脂、雙酚A型環氧樹脂、雙酚AF型環氧樹脂、酚芳烷型環氧樹脂、四苯基乙烷型環氧樹脂、酚鄰苯二甲醯亞胺型環氧樹脂。As the solid epoxy resin, bidiphenol type epoxy resin, naphthalene type epoxy resin, naphthalene type 4 functional epoxy resin, naphthol novolak type epoxy resin, cresol novolac type epoxy resin, Dicyclopentadiene type epoxy resin, triphenol type epoxy resin, naphthol type epoxy resin, biphenyl type epoxy resin, pernaphthylether type epoxy resin, anthracene type epoxy resin, bisphenol A type ring Oxygen resin, bisphenol AF type epoxy resin, phenol arane type epoxy resin, tetraphenylethane type epoxy resin, phenol phthalimide type epoxy resin.

作為固體狀環氧樹脂之具體例,可舉例DIC公司製之「HP4032H」(萘型環氧樹脂);DIC公司製之「HP-4700」、「HP-4710」(萘型4官能環氧樹脂);DIC公司製之「N-690」(甲酚酚醛清漆型環氧樹脂);DIC公司製之「N-695」(甲酚酚醛清漆型環氧樹脂);DIC公司製之「HP-7200」、「HP-7200HH」、「HP-7200H」、「HP-7200L」(二環戊二烯型環氧樹脂);DIC公司製之「EXA-7311」、「EXA-7311-G3」、「EXA-7311-G4」、「EXA-7311-G4S」、「HP6000」、「HP6000L」(伸萘醚型環氧樹脂);日本化藥公司製「EPPN-502H」(三酚型環氧樹脂);日本化藥公司製之「NC7000L」(萘酚酚醛清漆型環氧樹脂);日本化藥公司製之「NC3000H」、「NC3000」、「NC3000L」、「NC3000FH」、「NC3100」(聯苯型環氧樹脂);日鐵化學暨材料公司製之「ESN475V」、「ESN4100V」(萘型環氧樹脂);日鐵化學暨材料公司製之「ESN485」(萘酚型環氧樹脂);日鐵化學暨材料公司製之「ESN375」(二羥萘型環氧樹脂);三菱化學公司製之「YX4000H」、「YX4000」、「YX4000HK」、「YL7890」(聯二甲酚型環氧樹脂);三菱化學公司製之「YL6121」(聯苯型環氧樹脂);三菱化學公司製之「YX8800」(蔥型環氧樹脂);三菱化學公司製之「YX7700」(酚芳烷型環氧樹脂);大阪氣體化學公司製之「PG-100」、「CG-500」;三菱化學公司製之「YL7760」(雙酚AF型環氧樹脂);三菱化學公司製之「YL7800」(茀型環氧樹脂);三菱化學公司製之「jER1010」(雙酚A型環氧樹脂);三菱化學公司製之「jER1031S」(四苯基乙烷型環氧樹脂);日本化藥公司製之「WHR991S」(酚鄰苯二甲醯亞胺型環氧樹脂)等。該等可單獨使用1種,亦可組合2種以上使用。Specific examples of solid epoxy resins include "HP4032H" (naphthalene-type epoxy resin) manufactured by DIC Corporation; "HP-4700" and "HP-4710" (naphthalene-type tetrafunctional epoxy resin) manufactured by DIC Corporation; ); "N-690" (cresol novolak type epoxy resin) manufactured by DIC Corporation; "N-695" (cresol novolak type epoxy resin) manufactured by DIC Corporation; "HP-7200" manufactured by DIC Corporation ", "HP-7200HH", "HP-7200H", "HP-7200L" (dicyclopentadiene-type epoxy resin); "EXA-7311", "EXA-7311-G3", " EXA-7311-G4", "EXA-7311-G4S", "HP6000", "HP6000L" (perynalyl ether type epoxy resin); Nippon Kayaku "EPPN-502H" (triphenol type epoxy resin) ; "NC7000L" (naphthol novolak type epoxy resin) manufactured by Nippon Kayaku Corporation; "NC3000H", "NC3000", "NC3000L", "NC3000FH", "NC3100" (biphenyl type Epoxy resin); "ESN475V" and "ESN4100V" (naphthalene-type epoxy resin) manufactured by Nippon Steel Chemical and Materials Co., Ltd.; "ESN485" (naphthol-type epoxy resin) manufactured by Nippon Steel Chemical and Materials Co., Ltd.; Nippon Steel "ESN375" (dihydroxynaphthalene-type epoxy resin) manufactured by Chemical and Materials Corporation; "YX4000H", "YX4000", "YX4000HK", "YL7890" (bixylenol-type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YL6121" (biphenyl type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YX8800" (onion type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YX7700" (phenol aralkylene type epoxy resin) manufactured by Mitsubishi Chemical Corporation ; "PG-100" and "CG-500" manufactured by Osaka Gas Chemical Co., Ltd.; "YL7760" (bisphenol AF type epoxy resin) manufactured by Mitsubishi Chemical Corporation; resin); "jER1010" (bisphenol A type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "jER1031S" (tetraphenylethane type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "WHR991S" manufactured by Nippon Kayaku Corporation (phenol phthalimide type epoxy resin), etc. These may be used alone or in combination of two or more.

作為(a)環氧樹脂組合使用固體狀環氧樹脂與液狀環氧樹脂時,該等之質量比(固體狀環氧樹脂:液狀環氧樹脂)較佳為10:1~1:50,更佳為2:1~1:20,特佳為1:1~1:10。When (a) epoxy resin is used in combination of solid epoxy resin and liquid epoxy resin, the mass ratio (solid epoxy resin:liquid epoxy resin) is preferably 10:1~1:50 , more preferably 2:1~1:20, particularly preferably 1:1~1:10.

(a)環氧樹脂之環氧當量較佳為50g/eq.~ 5,000g/eq.,更佳為60g/eq.~2,000g/eq.,又更佳為70g/eq.~ 1,000g/eq.,又再更佳為80g/eq.~500g/eq.。環氧當量係環氧基每1當量之樹脂的質量。該環氧當量可依照JIS K7236測定。(a) The epoxy equivalent of epoxy resin is preferably 50g/eq.~5,000g/eq., more preferably 60g/eq.~2,000g/eq., and more preferably 70g/eq.~1,000g/ eq., and more preferably 80g/eq.~500g/eq. Epoxy equivalent is the mass of epoxy group per 1 equivalent of resin. This epoxy equivalent can be measured based on JISK7236.

(a)環氧樹脂之重量平均分子量(Mw)較佳為100~5,000,更佳為250~3,000,又更佳為400~1,500。樹脂之重量平均分子量可藉由凝膠滲透層析(GPC)法,以聚苯乙烯換算之值測定。(a) The weight average molecular weight (Mw) of the epoxy resin is preferably from 100 to 5,000, more preferably from 250 to 3,000, and still more preferably from 400 to 1,500. The weight average molecular weight of resin can be measured as the value of polystyrene conversion by the gel permeation chromatography (GPC) method.

樹脂組成物層中之(a)環氧樹脂之含量,未特別限定,但將樹脂組成物層中之不揮發成分設為100質量%時,較佳為70質量%以下,更佳為50質量%以下,又更佳為30質量%以下,特佳為20質量%以下。樹脂組成物層中之(a)環氧樹脂之含量之下限,未特別限定,但將樹脂組成物層中之不揮發成分設為100質量%時,較佳為0.1質量%以上,更佳為1質量%以上,又更佳為5質量%以上,特佳為10質量%以上。The content of (a) epoxy resin in the resin composition layer is not particularly limited, but when the non-volatile content in the resin composition layer is 100% by mass, it is preferably 70% by mass or less, more preferably 50% by mass % or less, more preferably less than 30 mass %, particularly preferably less than 20 mass %. The lower limit of the (a) epoxy resin content in the resin composition layer is not particularly limited, but when the non-volatile components in the resin composition layer are 100% by mass, it is preferably 0.1% by mass or more, more preferably 1 mass % or more, more preferably 5 mass % or more, especially preferably 10 mass % or more.

<(b)活性酯系硬化劑> (b)活性酯系硬化劑係可具有與(a)環氧樹脂反應而使之硬化之功能的環氧樹脂硬化劑。(b)活性酯系硬化劑可單獨使用1種,亦可任意組合2種以上使用。 <(b) Active ester hardener> The (b) active ester-based hardener is an epoxy resin hardener capable of reacting with (a) epoxy resin to harden it. (b) The active ester-based curing agent may be used alone or in any combination of two or more.

作為(b)活性酯系硬化劑,較佳使用一般的酚酯類、硫酚酯類、N-羥胺酯類、雜環羥基化合物之酯類等之於1個分子中具有2個以上反應活性高的酯基之化合物。該活性酯化合物較佳係藉由羧酸化合物及/或硫代羧酸化合物與羥化合物及/或硫醇化合物之縮合反應而獲得者。尤其基於耐熱性提高之觀點,較佳為由羧酸化合與羥化合物所得之活性酯化合物,更佳為由羧酸化合物與酚化合物及/或萘酚化合物所得之活性酯化合物。作為羧酸化合物,可舉例例如苯甲酸、乙酸、琥珀酸、馬來酸、依康酸、鄰苯二甲酸、間苯二甲酸、對苯二甲酸、均苯四甲酸等。作為酚化合物或萘酚化合物,可舉例例如氫醌、間苯二酚、雙酚A、雙酚F、雙酚S、酚酞、甲基化雙酚A、甲基化雙酚F、甲基化雙酚S、酚、鄰甲酚、間甲酚、對甲酚、兒茶酚、α-萘酚、β-萘酚、1,5-二羥基萘、1,6-二羥基萘、2,6-二羥基萘、二羥基二苯甲酮、三羥基二苯甲酮、四羥基二苯甲酮、連苯三酚、苯三酚、二環戊二烯型二酚化合物、酚酚醛清漆等。此處,所謂「二環戊二烯型二酚化合物」意指於二環戊二烯1分子縮合有2分子酚所得之二酚化合物。As (b) active ester-based hardener, it is preferable to use general phenol esters, thiophenol esters, N-hydroxylamine esters, esters of heterocyclic hydroxyl compounds, etc., which have more than two reactivity in one molecule. Compounds with high ester groups. The active ester compound is preferably obtained by condensation reaction of carboxylic acid compound and/or thiocarboxylic acid compound with hydroxyl compound and/or thiol compound. In particular, from the viewpoint of improving heat resistance, an active ester compound obtained by combining a carboxylic acid compound with a hydroxyl compound is preferred, and an active ester compound obtained by combining a carboxylic acid compound with a phenol compound and/or a naphthol compound is more preferred. Examples of the carboxylic acid compound include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, and pyromellitic acid. Examples of the phenol compound or naphthol compound include hydroquinone, resorcinol, bisphenol A, bisphenol F, bisphenol S, phenolphthalein, methylated bisphenol A, methylated bisphenol F, methylated Bisphenol S, phenol, o-cresol, m-cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2, 6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, pyrogallol, glucinol, dicyclopentadiene-type diphenol compounds, phenolic novolac, etc. . Here, the "dicyclopentadiene-type diphenol compound" means a diphenol compound obtained by condensing 2 molecules of phenol to 1 molecule of dicyclopentadiene.

作為(b)活性酯系硬化劑,具體而言,較佳為二環戊二烯型活性酯化合物、含萘構造之萘型活性酯化合物、含酚酚醛清漆之乙醯化物之活性酯化合物、含酚酚醛之苯甲醯化物之活性酯化合物,其中更佳為選自二環戊二烯型活性酯化合物及萘型活性酯化合物中之至少1種。作為二環戊二烯型活性酯化合物,較佳為包含二環戊二烯型二酚構造之活性酯化合物。As (b) the active ester-based hardener, specifically, dicyclopentadiene-type active ester compounds, naphthalene-type active ester compounds containing a naphthalene structure, active ester compounds containing acetylated phenol novolaks, The active ester compound of a phenolic novolac-containing benzoyl compound is more preferably at least one selected from dicyclopentadiene-type active ester compounds and naphthalene-type active ester compounds. As the dicyclopentadiene-type active ester compound, an active ester compound containing a dicyclopentadiene-type diphenol structure is preferable.

作為(b)活性酯系硬化劑之市售品,作為含二環戊二烯型二酚構造之活性酯化合物舉例為「EXB9451」、「EXB9460」、「EXB9460S」、「HPC-8000L-65TM」、「HPC-8000-65T」、「HPC-8000H」、「HPC-8000H-65TM」(DIC公司製);作為含萘構造之活性酯化合物舉例為「HP-B-8151-62T」、「EXB-8100L-65T」、「EXB-9416-70BK」、「HPC-8150-62T」、「EXB-8」(DIC公司製);作為含磷活性酯化合物舉例為「EXB9401」(DIC公司製),作為酚酚醛清漆之乙醯化物的活性酯化合物舉例為「DC808」(三菱化學公司製),作為酚酚醛清漆之苯甲醯化物的活性酯化合物舉例為「YLH1026」、「YLH1030」、「YLH1048」(三菱化學公司製),作為含苯乙烯基及萘構造之活性酯化合物舉例為「PC1300-02-65MA」(AIR‧WATER公司製)等。(b) Commercially available active ester-based hardeners, examples of active ester compounds containing a dicyclopentadiene-type diphenol structure include "EXB9451", "EXB9460", "EXB9460S", and "HPC-8000L-65TM" , "HPC-8000-65T", "HPC-8000H", "HPC-8000H-65TM" (manufactured by DIC Corporation); examples of active ester compounds containing a naphthalene structure include "HP-B-8151-62T", "EXB -8100L-65T", "EXB-9416-70BK", "HPC-8150-62T", "EXB-8" (manufactured by DIC Corporation); examples of phosphorus-containing active ester compounds include "EXB9401" (manufactured by DIC Corporation), Examples of active ester compounds of acetylated phenol novolaks include "DC808" (manufactured by Mitsubishi Chemical Corporation), and examples of active ester compounds of benzoyl compounds of phenol novolaks include "YLH1026", "YLH1030", and "YLH1048" (manufactured by Mitsubishi Chemical Corporation), and "PC1300-02-65MA" (manufactured by Air Water Corporation) etc. are exemplified as active ester compounds having a styryl group and a naphthalene structure.

(b)活性酯系硬化劑之活性酯基當量,較佳為50g/eq.~500g/eq.,更佳為50g/eq.~400g/eq.,又更佳為100g/eq.~300g/eq.。作性酯基當量係活性酯基每1當量之(b)活性酯系硬化劑的質量。(b) The active ester group equivalent weight of the active ester hardener is preferably 50g/eq.~500g/eq., more preferably 50g/eq.~400g/eq., and more preferably 100g/eq.~300g /eq.. The active ester group equivalent is the mass of (b) active ester-based hardener per 1 equivalent of active ester group.

樹脂組成物層中之(b)活性酯系硬化劑之含量,未特別限定,但將樹脂組成物層中之不揮發成分設為100質量%時,較佳為70質量%以下,更佳為50質量%以下,又更佳為30質量%以下,特佳為25質量%以下。樹脂組成物層中之(b)活性酯系硬化劑之含量下限,未特別限定,但將樹脂組成物層中之不揮發成分設為100質量%時,較佳為1質量%以上,更佳為3質量%以上,又更佳為5質量%以上,特佳為7質量%以上。The content of (b) the active ester-based hardener in the resin composition layer is not particularly limited, but when the non-volatile content in the resin composition layer is 100% by mass, it is preferably 70% by mass or less, more preferably 50 mass % or less, more preferably 30 mass % or less, especially preferably 25 mass % or less. The lower limit of the content of (b) the active ester-based hardener in the resin composition layer is not particularly limited, but when the non-volatile content in the resin composition layer is 100% by mass, it is preferably at least 1% by mass, more preferably It is at least 3% by mass, more preferably at least 5% by mass, and most preferably at least 7% by mass.

<(b’)其他硬化劑> 樹脂組成物層除了(b)活性酯系硬化劑之外,亦可含有(b’)其他硬化劑作為任意成分。此處說明之(b’)其他硬化劑係相當於上述說明之(b)活性酯系硬化劑者以外之成分。(b’)其他硬化劑可單獨使用1種,亦可任意組合2種以上使用。(b’)其他硬化劑與(b)活性酯系硬化劑同樣,具有可與(a)環氧樹脂反應並使硬化之功能之環氧樹脂硬化劑。 <(b') Other hardeners> The resin composition layer may contain (b') other curing agents as optional components in addition to the (b) active ester-based curing agent. The (b') other curing agents described here are components other than those corresponding to the (b) active ester-based curing agents described above. (b') Other curing agents may be used alone or in any combination of two or more. (b') Other hardeners are epoxy resin hardeners capable of reacting with (a) epoxy resin and hardening them like (b) active ester hardener.

作為(b’)其他硬化劑,未特別限定,但例如可舉例酚系硬化劑、碳二醯亞胺系硬化劑、酸酐系硬化劑、胺系硬化劑、苯并噁嗪系硬化劑、氰酸酯系硬化劑及硫醇系硬化劑等。樹脂組成物層中,作為(b’)其他硬化劑,較佳包含選自酚系硬化劑、碳二醯亞胺系硬化劑及氰酸酯系硬化劑中之1種以上的硬化劑,更佳包含選自酚系硬化劑及氰酸酯系硬化劑中之1種以上的硬化劑,特佳為包含氰酸酯系硬化劑。(b') Other curing agents are not particularly limited, but examples include phenolic curing agents, carbodiimide curing agents, acid anhydride curing agents, amine curing agents, benzoxazine curing agents, cyanide curing agents, Ester-based hardeners and mercaptan-based hardeners, etc. In the resin composition layer, as (b') another curing agent, it is preferable to contain at least one curing agent selected from the group consisting of phenolic curing agents, carbodiimide curing agents, and cyanate ester curing agents, and further It preferably contains at least one curing agent selected from phenol-based curing agents and cyanate-based curing agents, and particularly preferably contains cyanate-based curing agents.

作為酚系硬化劑,基於耐熱性及耐水性之觀點,較佳為具有酚醛清漆構造之酚系硬化劑。又,基於對被接著體之密著性之觀點,較佳為含氮酚系硬化劑,更佳為含三嗪骨架之酚系硬化劑。其中基於高度滿足耐熱性、耐水性及密著性之觀點,較佳為含三嗪骨架之酚酚醛清漆樹脂。作為酚系硬化劑之具體例,可舉例例如明和化成公司製之「MEH-7700」、「MEH-7810」、「MEH-7851」、日本化藥公司製之「NHN」、「CBN」、「GPH」、日鐵化學暨材料公司製之「SN-170」、「SN-180」、「SN-190」、「SN-475」、「SN-485」、「SN-495」、「SN-375」、「SN-395」、DIC公司製之「LA-7052」、「LA-7054」、「LA-3018」、「LA-3018-50P」、「LA-1356」、「TD2090」、「KA-1160」等。The phenolic curing agent is preferably a phenolic curing agent having a novolac structure from the viewpoint of heat resistance and water resistance. Also, from the viewpoint of adhesiveness to an adherend, a nitrogen-containing phenolic curing agent is preferred, and a triazine skeleton-containing phenolic curing agent is more preferred. Among them, a triazine skeleton-containing phenol novolak resin is preferable from the viewpoint of highly satisfying heat resistance, water resistance, and adhesiveness. Specific examples of phenolic curing agents include "MEH-7700", "MEH-7810", and "MEH-7851" manufactured by Meiwa Kasei Co., Ltd., "NHN", "CBN", " GPH", "SN-170", "SN-180", "SN-190", "SN-475", "SN-485", "SN-495", "SN- 375", "SN-395", "LA-7052", "LA-7054", "LA-3018", "LA-3018-50P", "LA-1356", "TD2090", " KA-1160", etc.

作為碳二醯亞胺系硬化劑,可舉例1分子內中具有1個以上,較佳2個以上碳二醯亞胺構造之硬化劑,舉例為例如四亞甲基-雙(第三丁基碳二醯亞胺)、環己烷雙(亞甲基-第三丁基碳二醯亞胺)等之脂肪族雙碳二醯亞胺;伸苯基-雙(二甲苯基碳二醯亞胺)等之芳香族雙碳二醯亞胺;聚六亞甲基碳二醯亞胺、聚三甲基六亞甲基碳二醯亞胺、聚伸環己基碳二醯亞胺、聚(亞甲基雙伸環己基碳二醯亞胺)、聚(異佛酮碳二醯亞胺)等之脂肪族聚碳二醯亞胺;聚(伸苯基碳二醯亞胺)、聚(伸萘基碳二醯亞胺)、聚(伸甲苯基碳二醯亞胺)、聚(甲基二異丙基伸苯基碳二醯亞胺)、聚(三乙基伸苯基碳二醯亞胺)、聚(二乙基伸苯基碳二醯亞胺)、聚(三異丙基伸苯基碳二醯亞胺)、聚(二異丙基伸苯基碳二醯亞胺)、聚(伸二甲苯基碳二醯亞胺)、聚(四甲基伸二甲苯基碳二醯亞胺)、聚(亞甲基二伸苯基碳二醯亞胺)、聚[亞甲基雙(甲基伸苯基)碳二醯亞胺]等之芳香族聚碳二亞胺等之聚碳二醯亞胺。As the carbodiimide-based curing agent, there can be mentioned a curing agent having one or more, preferably two or more carbodiimide structures in one molecule, such as tetramethylene-bis(tert-butyl Carbodiimide), cyclohexanebis(methylene-tert-butylcarbodiimide) and other aliphatic biscarbodiimides; phenylene-bis(xylylcarbodiimide) Aromatic biscarbodiimides such as amines); polyhexamethylenecarbodiimide, polytrimethylhexamethylenecarbodiimide, polycyclohexylcarbodiimide, poly( Aliphatic polycarbodiimides such as methylenebiscyclohexylcarbodiimide), poly(isophoronecarbodiimide); poly(phenylenecarbodiimide), poly( Naphthylenecarbodiimide), poly(cresylcarbodiimide), poly(methyldiisopropylphenylenecarbodiimide), poly(triethylenylcarbodiimide amine), poly(diethylphenylenecarbodiimide), poly(triisopropylphenylenecarbodiimide), poly(diisopropylphenylenecarbodiimide), poly(di Tolylcarbodiimide), poly(tetramethylxylylenecarbodiimide), poly(methylenebisphenylenecarbodiimide), poly[methylenebis(methylxylylenecarbodiimide) Polycarbodiimides such as aromatic polycarbodiimides such as phenyl) carbodiimides.

作為碳二醯亞胺系硬化劑之市售品,可舉例例如日清紡化學公司製之「CARBIDILITE V-02B」、「CARBIDILITE V-03」、「CARBIDILITE V-04K」、「CARBIDILITE V-07」及「CARBIDILITE V-09」;LANXESS公司製之「STABAXOL P」、「STABAXOL P400」、「HICAZYL 510」等。Examples of commercially available carbodiimide hardeners include "CARBIDILITE V-02B", "CARBIDILITE V-03", "CARBIDILITE V-04K", "CARBIDILITE V-07" manufactured by Nisshinbo Chemical Co., Ltd. "CARBIDILITE V-09"; "STABAXOL P", "STABAXOL P400", "HICAZYL 510" manufactured by LANXESS Corporation.

作為酸酐系硬化劑,可舉例1分子內中具有1個以上酸酐基之硬化劑,較佳為1分子內中具有2個以上酸酐基之硬化劑。作為酸酐系硬化劑之具體例,可舉例鄰苯二甲酸酐、四氫鄰苯二甲酸酐、六氫鄰苯二甲酸酐、甲基四氫鄰苯二甲酸酐、甲基六氫鄰苯二甲酸酐、甲基納迪克酸酐、氫化甲基納迪克酸酐、三烷基四甲基鄰苯二甲酸酐、十二碳烯基琥珀酸酐、5-(2,5-二氧代四氫-3-呋喃基)-3-甲基-3-環己烯-1,2-二羧酸酐、苯偏三酸酐、均苯四甲酸酐、二苯甲酮四羧酸二酐、聯苯四羧酸二酐、萘四羧酸二酐、氧二鄰苯二甲酸二酐、3,3’-4,4’-二苯基碸四羧酸二酐、1,3,3a,4,5,9b-六氫-5-(四氫-2,5-二氧代-3-呋喃基)-萘并[1,2-C]呋喃-1,3-二酮、乙二醇雙(苯偏三酸酐)、苯乙烯與馬來酸共聚合之苯乙烯‧馬來酸樹脂等之聚合物型酸酐等。作為酸酐系硬化劑之市售品,可舉例新日本理化公司製之「HNA-100」、「MH-700」、「MTA-15」、「DDSA」、「OSA」、三菱化學公司製之「YH-306」、「YH-307」、日立化成公司製之「HN-2200」、「HN-5500」、Cray Valley公司製之「EF-30」、「EF-40」、「EF-60」、「EF-80」等。Examples of the acid anhydride curing agent include those having one or more acid anhydride groups in one molecule, preferably those having two or more acid anhydride groups in one molecule. Specific examples of acid anhydride hardeners include phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, Formic anhydride, methylnadic anhydride, hydrogenated methylnadic anhydride, trialkyltetramethylphthalic anhydride, dodecenylsuccinic anhydride, 5-(2,5-dioxotetrahydro-3 -furyl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic dianhydride, biphenyl tetracarboxylic acid Dianhydride, Naphthalene tetracarboxylic dianhydride, Oxydiphthalic dianhydride, 3,3'-4,4'-Diphenylpyridine tetracarboxylic dianhydride, 1,3,3a,4,5,9b -Hexahydro-5-(tetrahydro-2,5-dioxo-3-furyl)-naphtho[1,2-c]furan-1,3-dione, ethylene glycol bis(triphenylene anhydride), polymeric anhydrides such as styrene-maleic acid resin copolymerized with styrene and maleic acid, etc. Examples of commercially available acid anhydride hardeners include "HNA-100", "MH-700", "MTA-15", "DDSA", "OSA" manufactured by Nippon Chemical Corporation, and " YH-306", "YH-307", "HN-2200", "HN-5500" manufactured by Hitachi Chemical Co., Ltd., "EF-30", "EF-40", "EF-60" manufactured by Cray Valley Corporation , "EF-80" and so on.

作為胺系硬化劑,可舉例於1分子內中具有1個以上,較佳2個以上胺基之硬化劑,可舉例例如脂肪族胺類、聚醚胺類、脂環式胺類、芳香族胺類等,其中,基於發揮本發明期望效果之觀點,較佳為芳香族胺類。胺系硬化劑較佳為1級胺或2級胺,更佳為1級胺。作為胺系硬化劑之具體例,可舉例4,4’-亞甲基雙(2,6-二甲基苯胺)、4,4’-二胺二苯基甲烷、4,4’-二胺基二苯基碸、3,3’-二胺基二苯基碸、間苯二胺、間二甲苯二胺、二乙基甲苯二胺、4,4’-二胺基二苯醚、3,3’-二甲基-4,4’-二胺基聯苯、2,2’-二甲基-4,4’-二胺基聯苯、3,3’-二羥基聯苯胺、2,2-雙(3-胺基-4-羥基苯基)丙烷、3,3-二甲基-5,5-二乙基-4,4-二苯基甲烷二胺、2,2-雙(4-胺基苯基)丙烷、2,2-雙(4-(4-胺基苯氧基)苯基)丙烷、1,3-雙(3-胺基苯氧基)苯、1,3-雙(4-胺基苯氧基)苯、1,4-雙(4-胺基苯氧基)苯、4,4’-雙(4-胺基苯氧基)聯苯、雙(4-(4-胺基苯氧基)苯基)碸、雙(4-(3-胺基苯氧基)苯基)碸等。胺系硬化劑亦可使用市售品,可舉例例如SEIKA公司製之「SEIKACURE-S」、日本化藥公司製之「KAYABOND C-200S」、「KAYABOND C-100」、「KAYAHARD A-A」、「KAYAHARD A-B」、「KAYAHARD A-S」、三菱化學公司製之「EPICURE W」等。Examples of amine-based hardeners include those having one or more, preferably two or more, amine groups in one molecule, such as aliphatic amines, polyether amines, alicyclic amines, aromatic Among the amines, aromatic amines are preferred from the viewpoint of exerting the desired effect of the present invention. The amine hardener is preferably a primary amine or a secondary amine, more preferably a primary amine. Specific examples of amine hardeners include 4,4'-methylene bis(2,6-dimethylaniline), 4,4'-diamine diphenylmethane, 4,4'-diamine Diphenylene, 3,3'-diaminodiphenylene, m-phenylenediamine, m-xylylenediamine, diethyltoluenediamine, 4,4'-diaminodiphenyl ether, 3 ,3'-Dimethyl-4,4'-diaminobiphenyl, 2,2'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dihydroxybenzidine, 2 ,2-bis(3-amino-4-hydroxyphenyl)propane, 3,3-dimethyl-5,5-diethyl-4,4-diphenylmethanediamine, 2,2-bis (4-aminophenyl)propane, 2,2-bis(4-(4-aminophenoxy)phenyl)propane, 1,3-bis(3-aminophenoxy)benzene, 1, 3-bis(4-aminophenoxy)benzene, 1,4-bis(4-aminophenoxy)benzene, 4,4'-bis(4-aminophenoxy)biphenyl, bis( 4-(4-aminophenoxy)phenyl)pyridine, bis(4-(3-aminophenoxy)phenyl)pyridine, etc. Commercially available amine hardeners can also be used, such as "SEIKACURE-S" manufactured by SEIKA Corporation, "KAYABOND C-200S" manufactured by Nippon Kayaku Co., Ltd., "KAYABOND C-100", "KAYAHARD A-A", " KAYAHARD A-B", "KAYAHARD A-S", "EPICURE W" manufactured by Mitsubishi Chemical Corporation, etc.

作為苯并噁嗪系硬化劑之具體例,可舉例JFE化學公司製之「JBZ-OP100D」、「ODA-BOZ」;昭和高分子公司製之「HFB2006M」;四國化成工業公司製之「P-d」、「F-a」等。Specific examples of benzoxazine-based curing agents include "JBZ-OP100D" and "ODA-BOZ" manufactured by JFE Chemical Co., Ltd.; "HFB2006M" manufactured by Showa High Polymer Co., Ltd.; "P-d" manufactured by Shikoku Chemical Industry Co., Ltd. ", "F-a" and so on.

作為氰酸酯系硬化劑,可舉例例如由雙酚A二氰酸酯、多酚氰酸酯(低聚(3-亞甲基-1,5-伸苯基氰酸酯))、4,4’-亞甲基雙(2,6-二甲基苯基氰酸酯)、4,4’-亞乙基二苯基二氰酸酯、六氟雙酚A二氰酸酯、2,2-雙(4-氰酸酯基)苯基丙烷、1,1-雙(4-氰酸酯基苯基甲烷)、雙(4-氰酸酯基-3,5-二甲基苯基)甲烷、1,3-雙(4-氰酸酯基苯-1-(甲基亞乙基))苯、雙(4-氰酸酯基苯基)硫醚及雙(4-氰酸酯基苯基)醚等之2官能氰酸酯樹脂,酚酚醛清漆及甲酚酚醛清漆等衍生之多官能氰酸酯樹脂、該等氰酸酯樹脂之一部分三嗪化之預聚物等。作為氰酸酯系硬化劑之具體例,可舉例日本LONZA公司製之「PT30」及「PT60」(均為酚酚醛清漆型多官能氰酸酯樹脂)、「BA230」、「BA230S75」(雙酚A二氰酸酯之一部分或全部經三嗪化之三聚物之預聚物)等。As the cyanate-based hardener, for example, bisphenol A dicyanate, polyphenol cyanate (oligo(3-methylene-1,5-phenylene cyanate)), 4, 4'-methylene bis(2,6-dimethylphenyl cyanate), 4,4'-ethylene diphenyl dicyanate, hexafluorobisphenol A dicyanate, 2, 2-bis(4-cyanato)phenylpropane, 1,1-bis(4-cyanatophenylmethane), bis(4-cyanato-3,5-dimethylphenyl ) methane, 1,3-bis(4-cyanatophenyl-1-(methylethylene))benzene, bis(4-cyanatophenyl)sulfide and bis(4-cyanate Bifunctional cyanate ester resins such as phenyl) ether, polyfunctional cyanate ester resins derived from phenol novolac and cresol novolac, etc., partially triazinated prepolymers of these cyanate resins, etc. Specific examples of cyanate-based hardeners include "PT30" and "PT60" (both phenolic novolac type multifunctional cyanate resins), "BA230" and "BA230S75" (bisphenol A prepolymer of a part or all of a triazinated trimer of a dicyanate), etc.

作為硫醇系硬化劑,可舉例例如三羥甲基丙烷三(3-巰基丙酸酯)、季戊四醇四(3-巰基丁酸酯)、三(3-巰基丙基)異氰尿酸酯等。Examples of thiol-based hardeners include trimethylolpropane tris(3-mercaptopropionate), pentaerythritol tetrakis(3-mercaptobutyrate), tris(3-mercaptopropyl)isocyanurate, etc. .

(b’)其他硬化劑之反應基當量較佳為50g/eq.~3000g/eq.,更佳為100g/eq.~1000g/eq.,又更佳為100g/eq.~500g/eq.,特佳為100g/eq.~300g/eq.。反應基當量係反應基每1當量之(b’)其他硬化劑的質量。(b') The reactive group equivalent weight of other curing agents is preferably 50g/eq.~3000g/eq., more preferably 100g/eq.~1000g/eq., and more preferably 100g/eq.~500g/eq. , especially 100g/eq.~300g/eq. Reactive group equivalent refers to the mass of (b') other hardeners per 1 equivalent of reactive group.

樹脂組成物層中之(b’)其他硬化劑之含量未特別限定,但將樹脂組成物層中之不揮發成分設為100質量%時,較佳為50質量%以下,更佳為30質量%以下,又更佳為20質量%以下,特佳為10質量%以下。樹脂組成物層中之(b’)其他硬化劑之含量下限,未特別限定,但將樹脂組成物層中之不揮發成分設為100質量%時,可為例如0質量%以上,或0.01質量%以上,較佳為0.1質量%以上,更佳為0.5質量%以上,特佳為1質量%以上。The content of (b') other hardeners in the resin composition layer is not particularly limited, but when the non-volatile content in the resin composition layer is 100% by mass, it is preferably 50% by mass or less, more preferably 30% by mass % or less, more preferably less than 20 mass %, particularly preferably less than 10 mass %. The lower limit of the content of (b') other curing agents in the resin composition layer is not particularly limited, but when the non-volatile content in the resin composition layer is 100 mass %, it may be, for example, 0 mass % or more, or 0.01 mass % % or more, preferably at least 0.1% by mass, more preferably at least 0.5% by mass, particularly preferably at least 1% by mass.

<(c)無機填充材> 樹脂組成物層亦可含有(c)無機填充材作為任意成分。(c)無機填充材係以粒子之狀態含於樹脂組成物層。 <(c) Inorganic filler> The resin composition layer may also contain (c) an inorganic filler as an optional component. (c) The inorganic filler is contained in the resin composition layer in the state of particles.

作為(c)無機填充材之材料係使用無機化合物。作為(c)無機填充材之材料,可舉例氧化矽、氧化鋁、玻璃、堇青石、矽氧化物、硫酸鋇、碳酸鋇、滑石、黏土、雲母粉、氧化鋅、水滑石、水鋁石、氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、氧化鎂、氮化硼、氮化鋁、二氮化三錳、硼酸鋁、碳酸鍶、鈦酸鍶、鈦酸鈣、鈦酸鎂、鈦酸鉍、氧化鈦、氧化鋯、鈦酸鋇、鈦酸鋯酸鋇、鋯酸鋇、鋯酸鈣、磷酸鋯及磷鎢酸鋯等。該等中,特佳為氧化矽。作為氧化矽,可舉例例如非晶氧化矽、熔融氧化矽、結晶氧化矽、合成氧化矽、中空氧化矽等。又,作為氧化矽,較佳為球形氧化矽。(c)無機填充材可單獨使用1種,亦可以任意比率組合2種以上使用。As a material of (c) the inorganic filler, an inorganic compound is used. Examples of materials for the (c) inorganic filler include silicon oxide, aluminum oxide, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, diaspore, Aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese dinitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate, titanium Bismuth oxide, titanium oxide, zirconium oxide, barium titanate, barium titanate zirconate, barium zirconate, calcium zirconate, zirconium phosphate and zirconium phosphotungstate, etc. Among them, silicon oxide is particularly preferable. Examples of silicon oxide include amorphous silicon oxide, fused silicon oxide, crystalline silicon oxide, synthetic silicon oxide, and hollow silicon oxide. Moreover, as silicon oxide, spherical silicon oxide is preferable. (c) The inorganic filler may be used individually by 1 type, and may use it combining 2 or more types by arbitrary ratios.

作為(c)無機填充材之市售品,可舉例例如日鐵化學暨材料公司製之「SP60-05」、「SP507-05」;ADAMATECHS公司製之「YC100C」、「YA050C」、「YA050C-MJE」、「YA010C」;DENKA公司製之「UFP-30」;TOKUYAMA公司製之「SILFIL NSS-3N」、「SILFIL NSS-4N」、「SILFIL NSS-5N」;ADMATECHS公司製之「SC2500SQ」、「SO-C4」、「SO-C2」、「SO-C1」;DENKA公司製之「DAW-03」、「FB-105FD」等。Commercially available products of (c) inorganic fillers include, for example, "SP60-05" and "SP507-05" manufactured by Nippon Steel Chemical & Materials Co., Ltd.; "YC100C", "YA050C" and "YA050C- MJE", "YA010C"; "UFP-30" manufactured by DENKA Corporation; "SILFIL NSS-3N", "SILFIL NSS-4N" and "SILFIL NSS-5N" manufactured by TOKUYAMA Corporation; "SC2500SQ" manufactured by ADMATECHS Corporation, "SO-C4", "SO-C2", "SO-C1"; "DAW-03", "FB-105FD" manufactured by DENKA Corporation, etc.

(c)無機填充材之平均粒徑未特別限定,但較佳為10μm以下,更佳為5μm以下,又更佳為3μm以下,再更佳為2μm以下,特佳為1.5μm以下。(c)無機填充材之平均粒徑之下限,未特別限定,但較佳為0.01μm以上,更佳為0.05μm以上,又更佳為0.1μm以上,特佳為0.2μm以上。(c)無機填充材之平均粒徑,可藉由基於Mie散射理論之雷射繞射‧散射法測定。具體而言,可藉由雷射繞射散射式粒徑分佈測定裝置,以體積基準作成無機填充材之粒徑分布,以其中值徑作為平均粒徑而測定。測定樣本可使用於小玻璃瓶中秤取無機填充材100mg、甲基乙基酮10g,以超音波分散10分鐘者。測定樣本使用雷射繞射式粒徑分佈測定裝置,將使用光源波長設為藍色及紅色,以流動胞(Flow cell)方式測定無機填充材之體積基準的粒徑分佈,自所得之粒徑分佈算出平均粒徑作為中值徑。作為雷射繞射散射式粒徑分佈測定裝置,可舉例例如堀場製作所公司製「LA-960」等。(c) The average particle size of the inorganic filler is not particularly limited, but is preferably not more than 10 μm, more preferably not more than 5 μm, more preferably not more than 3 μm, still more preferably not more than 2 μm, and most preferably not more than 1.5 μm. (c) The lower limit of the average particle diameter of the inorganic filler is not particularly limited, but is preferably at least 0.01 μm, more preferably at least 0.05 μm, still more preferably at least 0.1 μm, and most preferably at least 0.2 μm. (c) The average particle size of the inorganic filler can be measured by the laser diffraction‧scattering method based on the Mie scattering theory. Specifically, the particle size distribution of the inorganic filler can be prepared on a volume basis with a laser diffraction scattering type particle size distribution measuring device, and can be measured with the median diameter as the average particle size. The measurement sample can be used to weigh 100mg of inorganic filler and 10g of methyl ethyl ketone in a small glass bottle, and disperse it by ultrasonic wave for 10 minutes. The measurement sample uses a laser diffraction particle size distribution measuring device, sets the wavelength of the light source to blue and red, and measures the volume-based particle size distribution of the inorganic filler by means of a flow cell. The obtained particle size The average particle diameter was calculated as the median diameter from the distribution. As a laser diffraction-scattering type particle size distribution measuring device, "LA-960" etc. by Horiba Manufacturing Co., Ltd. can be mentioned, for example.

(c)無機填充材之比表面積未特別限定,但較佳為0.1m 2/g以上,更佳為0.5m 2/g以上,又更佳為1m 2/g以上,特佳為3m 2/g以上。(c)無機填充材之比表面積之上限未特別限定,但較佳為100m 2/g以下,更佳為70m 2/g以下,又更佳為50m 2/g以下,再更佳為30m 2/g以下,特佳為10m 2/g以下。無機填充材之比表面積,係依據BET法,使用比表面積測定裝置(MOUNTECH公司製Macsorb HM-1210)於試料表面吸附氮氣,使用BET多點法算出比表面積而獲得。 (c) The specific surface area of the inorganic filler is not particularly limited, but is preferably at least 0.1m 2 /g, more preferably at least 0.5m 2 /g, still more preferably at least 1m 2 /g, most preferably at least 3m 2 / g more than g. (c) The upper limit of the specific surface area of the inorganic filler is not particularly limited, but is preferably at most 100m 2 /g, more preferably at most 70m 2 /g, still more preferably at most 50m 2 /g, still more preferably at most 30m 2 /g or less, particularly preferably 10 m 2 /g or less. The specific surface area of the inorganic filler is based on the BET method, using a specific surface area measuring device (Macsorb HM-1210 manufactured by MOUNTECH Co., Ltd.) to adsorb nitrogen on the surface of the sample, and calculate the specific surface area using the BET multi-point method.

(c)無機填充材,基於提高耐濕性及分散性之觀點,較佳經表面處理劑處理。作為表面處理劑,可舉例例如含氟矽烷偶合劑、胺基矽烷系偶合劑、環氧基矽烷系偶合劑、巰基矽烷系偶合劑、矽烷系偶合劑、烷氧基矽烷、有機矽氮烷化合物、鈦酸酯系偶合劑等。又,表面處理劑可單獨使用1種,亦可任意組合2種以上使用。(c) The inorganic filler is preferably treated with a surface treatment agent from the viewpoint of improving moisture resistance and dispersibility. Examples of surface treatment agents include fluorine-containing silane coupling agents, aminosilane coupling agents, epoxysilane coupling agents, mercaptosilane coupling agents, silane coupling agents, alkoxysilanes, and organosilazane compounds. , Titanate coupling agent, etc. Moreover, a surface treatment agent may be used individually by 1 type, and may use it in combination of 2 or more types arbitrarily.

作為表面處理劑之市售品,可舉例例如信越化學工業公司製「KBM403」(3-縮水甘油氧基丙基三甲氧基矽烷)、信越化學工業公司製「KBM803」(3-巰基丙基三甲氧基矽烷)、信越化學工業公司製「KBE903」(3-胺丙基三乙氧基矽烷)、信越化學工業公司製「KBM573」(N-苯基-3-胺基丙基三甲氧基矽烷)、信越化學工業公司製「SZ-31」(六甲基二矽氮烷)、信越化學工業公司製「KBM103」(苯基三甲氧基矽烷)、信越化學工業公司製「KBM-4803」(長鏈環氧型矽烷偶合劑)、信越化學工業公司製「KBM-7103」(3,3,3-三氟丙基三甲氧基矽烷)等。Examples of commercially available surface treatment agents include Shin-Etsu Chemical Co., Ltd. "KBM403" (3-glycidyloxypropyltrimethoxysilane), Shin-Etsu Chemical Co., Ltd. "KBM803" (3-mercaptopropyltrimethoxysilane) oxysilane), Shin-Etsu Chemical Co., Ltd. "KBE903" (3-aminopropyltriethoxysilane), Shin-Etsu Chemical Co., Ltd. "KBM573" (N-phenyl-3-aminopropyltrimethoxysilane ), Shin-Etsu Chemical Co., Ltd. "SZ-31" (hexamethyldisilazane), Shin-Etsu Chemical Co., Ltd. "KBM103" (phenyltrimethoxysilane), Shin-Etsu Chemical Co., Ltd. "KBM-4803" ( long-chain epoxy silane coupling agent), "KBM-7103" (3,3,3-trifluoropropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., etc.

藉由表面處理劑表面處理之程度,基於無機填充材之分散性提高之觀點,較佳侷限於特定範圍。具體而言,無機填充材100質量%較佳以0.2質量%~5質量%之表面處理劑進行表面處理,更佳以0.2質量%~3質量%進行表面處理,又更佳以0.3質量%~2質量%進行表面處理。The degree of surface treatment by the surface treatment agent is preferably limited to a specific range from the viewpoint of improving the dispersibility of the inorganic filler. Specifically, 100% by mass of the inorganic filler is preferably treated with a surface treatment agent at 0.2% to 5% by mass, more preferably at 0.2% to 3% by mass, and more preferably at 0.3% to 3% by mass. 2% by mass for surface treatment.

藉由表面處理劑表面處理之程度,可藉由無機填充材之每單位表面積之碳量進行評價。無機填充材之每單位單位表面積之碳量,基於提高無機填充材分散性之觀點,較佳為0.02mg/m 2以上,更佳為0.1mg/m 2以上,又更佳為0.2mg/m 2以上。另一方面,基於樹脂組成物之熔融黏度及防止薄片形態之熔融黏度上升之觀點,較佳為1.0mg/m 2以下,更佳為0.8mg/m 2以下,又更佳為0.5mg/m 2以下。 The degree of surface treatment by the surface treatment agent can be evaluated by the amount of carbon per unit surface area of the inorganic filler. The amount of carbon per unit surface area of the inorganic filler is preferably 0.02 mg/m 2 or more, more preferably 0.1 mg/m 2 or more, and more preferably 0.2 mg/m 2 from the viewpoint of improving the dispersibility of the inorganic filler 2 or more. On the other hand, from the viewpoint of the melt viscosity of the resin composition and the prevention of an increase in the melt viscosity of the flake form, it is preferably 1.0 mg/m 2 or less, more preferably 0.8 mg/m 2 or less, and still more preferably 0.5 mg/m 2 2 or less.

(c)無機填充材之每單位表面積之碳量,可藉由溶劑(例如甲基乙基酮(MEK))將表面處理後之無機填充材洗淨處理後測定。具體而言,將作為溶劑之充分量MEK添加於經表面處理劑予以表面處理之無機填充材中,於25℃以超音波洗淨5分鐘。去除上澄液,將固形分乾燥後,使用碳分析計測定無機填充材之每單位表面積之碳量。作為碳分析計,可使用堀場製作所公司製「EMIA-320V」等。(c) The amount of carbon per unit surface area of the inorganic filler can be measured by washing the surface-treated inorganic filler with a solvent (such as methyl ethyl ketone (MEK)). Specifically, a sufficient amount of MEK as a solvent was added to the inorganic filler surface-treated with a surface treatment agent, and cleaned with ultrasonic waves at 25° C. for 5 minutes. After removing the supernatant and drying the solid content, the amount of carbon per unit surface area of the inorganic filler was measured using a carbon analyzer. As the carbon analyzer, "EMIA-320V" manufactured by HORIBA CO., LTD., etc. can be used.

樹脂組成物層中之(c)無機填充材之含量未特別限定,但將樹脂組成物層中之不揮發成分設為100質量%時,較佳為95質量%以下,更佳為90質量%以下,又更佳為85質量%以下,特佳為80質量%以下。樹脂組成物層中之(c)無機填充材之含量下限未特別限定,但基於將介電損耗因數抑制為更低之觀點,將樹脂組成物層中之不揮發成分設為100質量%時,可為例如0質量%以上,1質量%以上,或5質量%以上,較佳為10質量%以上,更佳為30質量%以上,又更佳為40質量%以上,再更佳為50質量%以上,特佳為60質量%以上。The content of (c) the inorganic filler in the resin composition layer is not particularly limited, but when the non-volatile content in the resin composition layer is 100 mass%, it is preferably 95 mass% or less, more preferably 90 mass% It is not more than 85% by mass, more preferably not more than 85% by mass, and most preferably not more than 80% by mass. The lower limit of the content of (c) the inorganic filler in the resin composition layer is not particularly limited, but from the viewpoint of suppressing the dielectric loss factor to be lower, when the non-volatile components in the resin composition layer are 100% by mass, For example, it may be at least 0% by mass, at least 1% by mass, or at least 5% by mass, preferably at least 10% by mass, more preferably at least 30% by mass, more preferably at least 40% by mass, and even more preferably at least 50% by mass. % or more, especially preferably more than 60% by mass.

<(d)自由基聚合性化合物> 樹脂組成物層亦可含有(d)自由基聚合性化合物作為任意成分。(d)自由性聚合性化合物可單獨使用1種,亦可任意組合2種以上使用。 <(d) Radical polymerizable compound> The resin composition layer may contain (d) a radically polymerizable compound as an optional component. (d) The freely polymerizable compound may be used alone or in any combination of two or more.

(d)自由基聚合性化合物,於一實施形態中,為具有乙烯性不飽和鍵之自由基聚合性化合物。(d)自由基聚合性化合物未特別限定,但可具有例如烯丙基、3-環己烯基、3-環戊烯基、2-乙烯基苯基、3-乙烯基苯基、4-乙烯基苯基等之不飽和烴基;丙烯醯基、甲基丙烯醯基、馬來醯亞胺基(2,5-二氫-2,5-二氧代-1H-吡咯-1-基)等之α,β-不飽和羰基等之自由基聚合性基。(d)自由基聚合性化合物較佳具有2個以上自由基聚合性基。(d) The radically polymerizable compound is a radically polymerizable compound having an ethylenically unsaturated bond in one embodiment. (d) The radically polymerizable compound is not particularly limited, but may have, for example, allyl, 3-cyclohexenyl, 3-cyclopentenyl, 2-vinylphenyl, 3-vinylphenyl, 4- Unsaturated hydrocarbon groups such as vinylphenyl; acryl, methacryl, maleimide (2,5-dihydro-2,5-dioxo-1H-pyrrol-1-yl) Free radical polymerizable groups such as α, β-unsaturated carbonyl, etc. (d) The radically polymerizable compound preferably has two or more radically polymerizable groups.

(d)自由基聚合性化合物,於第一實施形態中,較佳包含具有乙烯基苯基及/或(甲基)丙烯醯基之熱塑性樹脂。(甲基)丙稀醯基意指丙烯醯基或甲基丙烯醯基。乙烯基苯基包含2-乙烯基苯基、3-乙烯基苯基、4-乙烯基苯基或該等之芳香族碳原子進而經1個以上烷基取代者。乙烯基苯基及/或(甲基)丙烯醯基於1分子中較佳具有2個以上。作為熱塑性樹脂,可舉例例如苯氧樹脂、聚乙烯基縮醛樹脂、聚苯乙烯樹脂、聚乙烯樹脂、聚丙烯樹脂、聚丁二烯樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚醚醯亞胺樹脂、聚碸樹脂、聚醚碸樹脂、聚苯醚樹脂、聚醚醚酮樹脂、聚酯樹脂等,(d)自由基聚合性化合物於該實施形態中,包含該等樹脂之具有乙烯基苯基及/或(甲基)丙烯醯基之改質樹脂。(d) The radically polymerizable compound in the first embodiment preferably includes a thermoplastic resin having a vinylphenyl group and/or a (meth)acryl group. (Meth)acryl means acryl or methacryl. Vinylphenyl includes 2-vinylphenyl, 3-vinylphenyl, 4-vinylphenyl or those whose aromatic carbon atoms are further substituted with one or more alkyl groups. It is preferable to have 2 or more vinylphenyl groups and/or (meth)acryloyl groups in 1 molecule. Examples of thermoplastic resins include phenoxy resins, polyvinyl acetal resins, polystyrene resins, polyethylene resins, polypropylene resins, polybutadiene resins, polyimide resins, and polyamideimide resins. , polyetherimide resin, polyether imide resin, polyether imide resin, polyether imide resin, polyphenylene ether resin, polyether ether ketone resin, polyester resin, etc., (d) radically polymerizable compounds in this embodiment include these Modified resins with vinylphenyl and/or (meth)acryl groups.

(d)自由基性聚合性化合物於第一實施形態,更佳包含選自具有乙烯基苯基及/或(甲基)丙烯醯基之改質聚苯醚樹脂及具有乙烯基苯基及/或(甲基)丙烯醯基之改質聚苯乙烯樹脂之樹脂,又更佳包含具有乙烯基苯基及/或(甲基)丙烯醯基之改質聚苯醚樹脂,特佳包含以式(B-1)表示之樹脂:(d) The radically polymerizable compound in the first embodiment preferably includes modified polyphenylene ether resins having vinylphenyl groups and/or (meth)acryl groups and modified polyphenylene ether resins having vinylphenyl groups and/or (meth)acryl groups. Or the resin of the modified polystyrene resin of (meth)acryl group, more preferably comprises the modified polyphenylene ether resin that has vinylphenyl and/or (meth)acryl group, particularly preferably comprises the formula Resin represented by (B-1):

Figure 02_image001
Figure 02_image001

[式中,R 11及R 12各自獨立表示烷基;R 13、R 14、R 21、R 23及R 24各自獨立表示氫原子或烷基;R 31及R 32各自獨立表示乙烯基苯基或(甲基)丙烯醯基;Y 1表示單鍵、-C(R y) 2-、-O-、-CO-、-S-、-SO-或-SO 2-;R y各自獨立表示氫原子或烷基;Y 2表示單鍵或伸烷基;p表示0或1;q及r各自獨立表示1以上之整數]。 q單位及r單位各可於每單位相同,亦可不同。 [In the formula, R 11 and R 12 each independently represent an alkyl group; R 13 , R 14 , R 21 , R 23 and R 24 each independently represent a hydrogen atom or an alkyl group; R 31 and R 32 each independently represent a vinyl phenyl group or (meth)acryloyl; Y 1 represents a single bond, -C(R y ) 2 -, -O-, -CO-, -S-, -SO- or -SO 2 -; R y independently represents a hydrogen atom or an alkyl group; Y 2 represents a single bond or an alkylene group; p represents 0 or 1; q and r each independently represent an integer of 1 or more]. The q unit and the r unit may be the same or different for each unit.

R 11及R 12各自獨立表示烷基,較佳為甲基。R 13及R 14各自獨立表示氫原子或烷基,較佳為氫原子或烷基,更佳為氫原子。R 21及R 22各自獨立表示氫原子或烷基,較佳為氫原子或甲基,更佳為甲基。R 23及R 24各自獨立表示氫原子或烷基,較佳為氫原子或甲基。 R 11 and R 12 each independently represent an alkyl group, preferably a methyl group. R 13 and R 14 each independently represent a hydrogen atom or an alkyl group, preferably a hydrogen atom or an alkyl group, more preferably a hydrogen atom. R 21 and R 22 each independently represent a hydrogen atom or an alkyl group, preferably a hydrogen atom or a methyl group, more preferably a methyl group. R 23 and R 24 each independently represent a hydrogen atom or an alkyl group, preferably a hydrogen atom or a methyl group.

所謂烷基意指直鏈、分支鏈及/或環狀之1價脂肪族飽和烴基。烷基只要未特別指定,則較佳為碳原子數1~14之烷基,更佳為碳原子數1~10之烷基,又更佳為碳原子數1~6之烷基。作為烷基可舉例例如甲基、乙基、丙基、異丙基、丁基、異丁基、第二丁基、第三丁基、戊基、己基、庚基、辛基、壬基、癸基、環戊基、環己基、甲基環己基、二甲基環己基、三甲基環己基、環戊基甲基、環己基甲基等。The term "alkyl group" means a linear, branched and/or cyclic monovalent aliphatic saturated hydrocarbon group. Unless otherwise specified, the alkyl group is preferably an alkyl group having 1 to 14 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms, and still more preferably an alkyl group having 1 to 6 carbon atoms. Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, second butyl, third butyl, pentyl, hexyl, heptyl, octyl, nonyl, Decyl, cyclopentyl, cyclohexyl, methylcyclohexyl, dimethylcyclohexyl, trimethylcyclohexyl, cyclopentylmethyl, cyclohexylmethyl, etc.

R 31及R 32各自獨立表示乙烯基苯基或(甲基)丙烯醯基,Y 2表示單鍵或伸烷基。所謂伸烷基意指直鏈、分支鏈及/或環狀之2價脂肪族飽和烴基。伸烷基較佳為碳原子數1~14之伸烷基,較佳為碳原子數1~10之伸烷基,較佳為碳原子數1~6之伸烷基。作為伸烷基可舉例例如-CH 2-、-CH 2-CH 2-、-CH(CH 3)-、-CH 2-CH 2-CH 2-、-CH 2-CH(CH 3)-、-CH(CH 3)-CH 2-、-C(CH 3) 2-等。較佳R 31及R 32為乙烯基苯基,且Y 2為伸烷基(特佳為-CH 2-),或R 31及R 32為(甲基)丙烯醯基,且Y 2為單鍵。 R 31 and R 32 each independently represent a vinylphenyl group or a (meth)acryl group, and Y 2 represents a single bond or an alkylene group. The term "alkylene group" means a linear, branched and/or cyclic divalent aliphatic saturated hydrocarbon group. The alkylene group is preferably an alkylene group having 1 to 14 carbon atoms, more preferably an alkylene group having 1 to 10 carbon atoms, more preferably an alkylene group having 1 to 6 carbon atoms. Examples of the alkylene group include -CH 2 -, -CH 2 -CH 2 -, -CH(CH 3 )-, -CH 2 -CH 2 -CH 2 -, -CH 2 -CH(CH 3 )-, -CH(CH 3 )-CH 2 -, -C(CH 3 ) 2 -, etc. Preferably R 31 and R 32 are vinylphenyl, and Y 2 is alkylene (especially preferably -CH 2 -), or R 31 and R 32 are (meth)acryloyl, and Y 2 is mono key.

Y 1表示單鍵、-C(R y) 2-、-O-、-CO-、-S-、 -SO-或-SO 2-,較佳為單鍵、-C(R y) 2-或-O-。R y各自獨立表示氫原子或烷基,較佳為氫原子或甲基。p表示0或1,較佳為1。q及r各自獨立表示1以上之整數,較佳為1~200之整數,更佳為1~100之整數。 Y 1 represents a single bond, -C(R y ) 2 -, -O-, -CO-, -S-, -SO- or -SO 2 -, preferably a single bond, -C(R y ) 2 - or -O-. R y each independently represent a hydrogen atom or an alkyl group, preferably a hydrogen atom or a methyl group. p represents 0 or 1, preferably 1. q and r each independently represent an integer of 1 or more, preferably an integer of 1 to 200, more preferably an integer of 1 to 100.

作為第一實施形態之(d)自由基聚合性化合物之市售品,可舉例三菱氣體化學公司製之「OPE-2St 1200」、「OPE-2St 2200」(乙烯基苄基改質聚苯醚樹脂);SABIC Innovative Plastics公司製之「SA9000」、「SA9000-111」(甲基丙烯酸改質聚苯醚樹脂)等。Commercially available products of (d) the radically polymerizable compound of the first embodiment include "OPE-2St 1200" and "OPE-2St 2200" (vinylbenzyl-modified polyphenylene ether) manufactured by Mitsubishi Gas Chemical Co., Ltd. resin); "SA9000" and "SA9000-111" (methacrylic acid-modified polyphenylene ether resin) manufactured by SABIC Innovative Plastics Co., Ltd.;

樹脂組成物層中之(d)自由基聚合性化合物之含量未特別限定,但將樹脂組成物層中之不揮發成分設為100質量%時,較佳為50質量%以下,更佳為30質量%以下,又更佳為20質量%以下,特佳為10質量%以下。樹脂組成物層中之(d)自由基聚合性化合物之含量下限未特別限定,但基於將介電損耗因數抑制為更低之觀點,將樹脂組成物層中之不揮發成分設為100質量%時,可為例如0質量%以上、0.01質量%以上,較佳為0.1質量%以上,更佳為1質量%以上,又更佳為1質量%以上,特佳為3質量%以上。The content of (d) the radically polymerizable compound in the resin composition layer is not particularly limited, but when the non-volatile content in the resin composition layer is 100% by mass, it is preferably 50% by mass or less, more preferably 30% by mass. % by mass or less, more preferably less than 20 mass %, particularly preferably less than 10 mass %. The lower limit of the content of (d) the radically polymerizable compound in the resin composition layer is not particularly limited, but from the viewpoint of suppressing the dielectric dissipation factor to be lower, the non-volatile components in the resin composition layer are set to 100% by mass , for example, 0% by mass or more, 0.01% by mass or more, preferably 0.1% by mass or more, more preferably 1% by mass or more, more preferably 1% by mass or more, particularly preferably 3% by mass or more.

<(e)熱塑性樹脂> 樹脂組成物層亦可進而含有(e)熱塑性樹脂作為任意成分。此處說明之(e)熱塑性樹脂,係不相當於(a)環氧樹脂、(b)其他硬化劑及(d)自由基聚合性化合物之成分。 <(e) Thermoplastic resin> The resin composition layer may further contain (e) a thermoplastic resin as an optional component. The (e) thermoplastic resin described here is not a component corresponding to (a) epoxy resin, (b) other curing agent, and (d) radically polymerizable compound.

作為(e)熱塑性樹脂可舉例例如聚醯亞胺樹脂、苯氧樹脂、聚乙烯基縮醛樹脂、聚烯烴樹脂、聚丁二烯樹脂、聚醯胺醯亞胺樹脂、聚醚醯亞胺樹脂、聚碸樹脂、聚醚碸樹脂、聚苯醚樹脂、聚碳酸酯樹脂、聚醚醚酮樹脂、聚酯樹脂等。樹脂組成物層於一實施形態中,較佳包含選自由聚醯亞胺樹脂及苯氧樹脂所成之群之熱塑性樹脂,更佳包含苯氧樹脂。又熱塑性樹脂可單獨使用1種,或亦可組合2種以上使用。Examples of (e) thermoplastic resins include polyimide resins, phenoxy resins, polyvinyl acetal resins, polyolefin resins, polybutadiene resins, polyamideimide resins, and polyetherimide resins. , Polyester resin, polyether resin, polyphenylene ether resin, polycarbonate resin, polyether ether ketone resin, polyester resin, etc. In one embodiment, the resin composition layer preferably includes a thermoplastic resin selected from the group consisting of polyimide resin and phenoxy resin, more preferably includes phenoxy resin. Moreover, a thermoplastic resin may be used individually by 1 type, or may use it in combination of 2 or more types.

作為聚醯亞胺樹脂之具體例,可舉例信越化學工業公司製「SLK-6100」、新日本理化公司製之「RIKACOAT SN20」及「RIKACOAT PN20」等。Specific examples of the polyimide resin include "SLK-6100" manufactured by Shin-Etsu Chemical Co., Ltd., "RIKACOAT SN20" and "RIKACOAT PN20" manufactured by Shin Nippon Chemical Co., Ltd., and the like.

作為苯氧樹脂可舉例例如具有選自由雙酚A骨架、雙酚F骨架、雙酚S骨架,雙酚苯乙酮骨架、酚醛清漆骨架、聯苯骨架、茀骨架、二環戊二烯骨架、降冰片烯骨架、萘骨架、蔥骨架、金剛烷骨架、萜烯骨架及三甲基環己烷骨架所成之群之1種以上之骨架的苯氧樹脂。苯氧樹脂之末端可為酚性羥基、環氧基等之任一官能基。Examples of phenoxy resins include bisphenol A skeleton, bisphenol F skeleton, bisphenol S skeleton, bisphenol acetophenone skeleton, novolac skeleton, biphenyl skeleton, fennel skeleton, dicyclopentadiene skeleton, A phenoxy resin having one or more skeletons of the group consisting of a norbornene skeleton, a naphthalene skeleton, an onion skeleton, an adamantane skeleton, a terpene skeleton, and a trimethylcyclohexane skeleton. The terminal of the phenoxy resin can be any functional group such as phenolic hydroxyl group or epoxy group.

作為苯氧樹脂之具體例可舉例三菱化學公司製之「1256」及「4250」(均為含雙酚A骨架之苯氧樹脂);三菱化學公司製之「YX8100」(含雙酚S骨架之苯氧樹脂);三菱化學公司製之「YX6954」(含雙酚苯乙酮骨架之苯氧樹脂);新日鐵住金化學公司製之「FX280」及「FX293」;三菱化學公司製之「YL7500BH30」、「YX6954BH30」、「YX7553」、「YX7553BH30」、「YL7769BH30」、「YL6794」、「YL7213」、「YL7290」、「YL7482」及「YL7891BH30」等。Specific examples of phenoxy resins include "1256" and "4250" manufactured by Mitsubishi Chemical Corporation (both phenoxy resins containing a bisphenol A skeleton); "YX8100" manufactured by Mitsubishi Chemical Corporation (a bisphenol S skeleton containing phenoxy resin); "YX6954" manufactured by Mitsubishi Chemical Corporation (phenoxy resin containing bisphenol acetophenone skeleton); "FX280" and "FX293" manufactured by Nippon Steel & Sumikin Chemical Corporation; "YL7500BH30" manufactured by Mitsubishi Chemical Corporation ", "YX6954BH30", "YX7553", "YX7553BH30", "YL7769BH30", "YL6794", "YL7213", "YL7290", "YL7482" and "YL7891BH30".

作為聚乙烯基縮醛樹脂可舉例例如聚乙烯基甲縮醛樹脂、聚乙烯基丁縮醛樹脂等,較佳為聚乙烯基丁縮醛樹脂。作為聚乙烯基丁縮醛樹脂之具體例,可舉例電氣化學工業公司製之「DENKA BUTYRAL 4000-2」、「DENKA BUTYRAL 5000-A」、「DENKA BUTYRAL 6000-C」、「DENKA BUTYRAL 6000-EP」;積水化學工業公司製之S-LEC BH系列、BX系列(例如BX-5Z)、KS系列(例如KS-1)、BL系列、BM系列等。Examples of the polyvinyl acetal resin include polyvinyl formal resin, polyvinyl butyral resin, and the like, and polyvinyl butyral resin is preferred. Specific examples of polyvinyl butyral resins include "DENKA BUTYRAL 4000-2", "DENKA BUTYRAL 5000-A", "DENKA BUTYRAL 6000-C", "DENKA BUTYRAL 6000-EP" manufactured by Denki Kagaku Kogyo Co., Ltd. "; S-LEC BH series, BX series (such as BX-5Z), KS series (such as KS-1), BL series, BM series, etc. manufactured by Sekisui Chemical Industry Co., Ltd.

作為聚烯烴樹脂可舉例例如低密度聚乙烯、超低密度聚乙烯、高密度聚乙烯、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸乙酯共聚物、乙烯-丙烯酸甲酯共聚物等之乙烯系共聚合樹脂;聚丙烯、乙烯-丙烯嵌段共聚物等之聚烯烴系聚合物等。Examples of polyolefin resins include ethylene-based resins such as low-density polyethylene, ultra-low-density polyethylene, high-density polyethylene, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, and ethylene-methyl acrylate copolymer. Copolymer resins; polyolefin polymers such as polypropylene and ethylene-propylene block copolymers, etc.

作為聚丁二烯樹脂可舉例例如含氫化聚丁二烯骨架樹脂、含羥基聚丁二烯樹脂、含酚性羥基聚丁二烯樹脂、含羧基聚丁二烯樹脂、含酸酐基聚丁二烯樹脂、含環氧基聚丁二烯、含異氰酸酯基聚丁二烯樹脂、含胺基甲酸酯基聚丁二烯樹脂、聚苯醚-聚丁二烯樹脂等。Examples of polybutadiene resins include hydrogenated polybutadiene skeleton-containing resins, hydroxyl-containing polybutadiene resins, phenolic hydroxyl-containing polybutadiene resins, carboxyl-containing polybutadiene resins, and acid anhydride group-containing polybutadiene resins. Vinyl resin, epoxy-containing polybutadiene, isocyanate-containing polybutadiene resin, urethane-containing polybutadiene resin, polyphenylene ether-polybutadiene resin, etc.

作為聚醯胺醯亞胺樹脂之具體例可舉例東洋紡公司製之「VYLOMAX HR11NN」及「VYLOMAX HR16NN」。作為聚醯胺醯亞胺之具體例可舉例日立化成公司製之「KS9100」、「KS9300」(含聚矽氧烷骨架聚醯胺醯亞胺)等之改質聚醯胺醯亞胺。Specific examples of the polyamideimide resin include "VYLOMAX HR11NN" and "VYLOMAX HR16NN" manufactured by Toyobo Co., Ltd. Specific examples of the polyamide-imide include modified polyamide-imides such as "KS9100" and "KS9300" (polysiloxane skeleton-containing polyamide-imide) manufactured by Hitachi Chemical Co., Ltd.

作為聚醚碸樹脂之具體例可舉例住友化學公司製之「PES5003P」等。Specific examples of the polyethersulfone resin include "PES5003P" manufactured by Sumitomo Chemical Co., Ltd. and the like.

作為聚碸樹脂之具體例可舉例Solvay Specialty Polymers Japan公司製之「P1700」、「P3500」等。Specific examples of the polyester resin include "P1700" and "P3500" manufactured by Solvay Specialty Polymers Japan Co., Ltd., and the like.

作為聚苯醚樹脂之具體例可舉例SABIC製「NORYL SA90」等。聚醚醯亞胺樹脂之具體例可舉例GE公司製之「Ultem」等。Specific examples of the polyphenylene ether resin include "NORYL SA90" manufactured by SABIC. Specific examples of the polyetherimide resin include "Ultem" manufactured by GE, and the like.

作為聚碳酸酯樹脂可舉例含羥基碳酸酯樹脂、含酚性羥基碳酸酯樹脂、含羧基碳酸酯樹脂、含酸酐基碳酸酯樹脂、含異氰酸酯基碳酸酯樹脂、含胺基甲酸酯基碳酸酯樹脂等。作為聚碳酸酯樹脂之具體例,可舉例三菱氣體化學公司製之「FPC0220」、旭化成化學品公司製之「T6002」、「T6001」(聚碳酸酯二醇)、Kuraray公司製之「C-1090」、「C-2090」、「C-3090」(聚碳酸酯二醇)等。作為聚醚醚酮樹脂之具體例可舉例住友化學公司製之「Sumiploy K」等。Examples of the polycarbonate resin include hydroxyl-containing carbonate resins, phenolic hydroxyl-containing carbonate resins, carboxyl-containing carbonate resins, acid anhydride group-containing carbonate resins, isocyanate-group-containing carbonate resins, and urethane-containing carbonate resins. resin etc. Specific examples of polycarbonate resins include "FPC0220" manufactured by Mitsubishi Gas Chemicals, "T6002" and "T6001" (polycarbonate diol) manufactured by Asahi Kasei Chemicals, and "C-1090" manufactured by Kuraray Corporation. ", "C-2090", "C-3090" (polycarbonate diol), etc. Specific examples of the polyether ether ketone resin include "Sumiploy K" manufactured by Sumitomo Chemical Co., Ltd., and the like.

作為聚酯樹脂可舉例例如聚對苯二甲酸乙二酯樹脂、聚萘二甲酸乙二酯樹脂、聚對苯二甲酸丁二酯樹脂、聚萘二甲酸丁二酯樹脂、聚對苯二甲酸丙二酯樹脂、聚萘二甲酸丙二酯樹脂、聚對苯二甲酸環己烷二甲酯樹脂等。Examples of the polyester resin include polyethylene terephthalate resin, polyethylene naphthalate resin, polybutylene terephthalate resin, polybutylene naphthalate resin, polyethylene terephthalate Propylene glycol resin, polytrimethylene naphthalate resin, polycyclohexanedimethyl terephthalate resin, etc.

(e)熱塑性樹脂之重量平均分子量(Mw),基於顯著獲得本發明效果之觀點,較佳為5,000以上,更佳為8,000以上,又更佳為10,000以上,特佳為20,000以上,較佳為100,000以下,更佳為70,000以下,又更佳為60,000以下,特佳為50,000以下。(e) The weight-average molecular weight (Mw) of the thermoplastic resin is preferably at least 5,000, more preferably at least 8,000, still more preferably at least 10,000, particularly preferably at least 20,000, and most preferably at least 20,000, from the viewpoint of remarkably obtaining the effect of the present invention. It is less than 100,000, more preferably less than 70,000, more preferably less than 60,000, and most preferably less than 50,000.

樹脂組成物層中之(e)熱塑性樹脂之含量未特別限定,但將樹脂組成物層中之不揮發成分設為100質量%時,較佳為20質量%以下,更佳為10質量%以下,又更佳為5質量%以下,特佳為2質量%以下。樹脂組成物層中之(e)熱塑性樹脂之含量下限未特別限定,但將樹脂組成物層中之不揮發成分設為100質量%時,例如為0質量%以上,較佳為0.001質量%以上,更佳為0.01質量%以上,又更佳為0.1質量%以上,特佳為0.5質量%以上。The content of (e) thermoplastic resin in the resin composition layer is not particularly limited, but when the non-volatile content in the resin composition layer is 100% by mass, it is preferably at most 20% by mass, more preferably at most 10% by mass , more preferably at most 5% by mass, particularly preferably at most 2% by mass. The lower limit of the (e) thermoplastic resin content in the resin composition layer is not particularly limited, but when the non-volatile content in the resin composition layer is 100 mass %, for example, it is 0 mass % or more, preferably 0.001 mass % or more , more preferably at least 0.01% by mass, more preferably at least 0.1% by mass, particularly preferably at least 0.5% by mass.

<(f)硬化促進劑> 樹脂組成物層亦可進而含有(f)硬化促進劑作為任意成分。(f)硬化促進劑具有作為促進(a)環氧樹脂硬化之硬化催化劑之功能。 <(f) Hardening Accelerator> The resin composition layer may further contain (f) a curing accelerator as an optional component. (f) The hardening accelerator has a function as a hardening catalyst which accelerates hardening of (a) epoxy resin.

作為(f)硬化促進劑可舉例例如磷系硬化促進劑、脲系硬化促進劑、胍系硬化促進劑、咪唑系硬化促進劑、金屬系硬化促進劑、胺系硬化促進劑等。(f)硬化促進劑較佳包含選自咪唑系硬化促進劑及胺系硬化促進劑之硬化促進劑。(f)硬化促進劑可單獨使用1種,亦可組合2種以上使用。Examples of the (f) curing accelerator include phosphorus-based curing accelerators, urea-based curing accelerators, guanidine-based curing accelerators, imidazole-based curing accelerators, metal-based curing accelerators, and amine-based curing accelerators. (f) The hardening accelerator preferably includes a hardening accelerator selected from imidazole-based hardening accelerators and amine-based hardening accelerators. (f) The hardening accelerator may be used alone or in combination of two or more.

作為磷系硬化促進劑可舉例溴化四丁基鏻、氯化四丁基鏻、四丁基鏻乙酸鹽、四丁基鏻癸酸鹽、四丁基鏻月桂酸鹽、雙(四丁基鏻)均苯四甲酸鹽、四丁基鏻氫六氫苯二甲酸鹽、四丁基鏻2,6-雙(2-羥基-5-甲基苯基)甲基]-4-甲基酚鹽、二-第三丁基甲基鏻四苯基硼酸鹽等之脂肪族鏻鹽;溴化甲基三苯基鏻、溴化乙基三苯基鏻、溴化丙基三苯基鏻、溴化丁基三苯基鏻、氯化苄基三苯基鏻、溴化四苯基鏻、對-甲苯基三苯基鏻-對-甲苯基硼酸鹽、四苯基鏻四苯基硼酸鹽、四苯基鏻四對-甲苯基硼酸鹽、三苯基乙基鏻四苯基硼酸鹽、三(3-甲基苯基)乙基鏻四苯基硼酸鹽、三(2-甲氧基苯基)乙基鏻四苯基硼酸鹽、(4-甲基苯基)三苯基鏻硫代氰酸鹽、四苯基鏻硫代氰酸鹽、丁基三苯基鏻硫代氰酸鹽等之芳香族鏻鹽;三苯膦‧三苯基硼烷等之芳香族膦‧硼烷複合體;三苯膦‧對-苯醌加成反應物等之芳香族苯膦‧醌加成反應物;三丁基膦、三-第三丁基膦、三辛基膦、二-第三丁基(2-丁烯基)膦、二-第三丁基(3-甲基-2-丁烯基)膦、三環己基膦等之脂肪族膦;二丁基苯基膦、二-第三丁基苯基膦、甲基二苯基膦、乙基二苯基膦、丁基二苯基膦、二苯基環己基膦、三苯基膦、三-鄰-甲苯基膦、三-間-甲苯基膦、三-對-甲苯基膦、三(4-乙基苯基)膦、三(4-丙基苯基)膦、三(4-異丙基苯基)膦、三(4-丁基苯基)膦、三(4-第三丁基苯基)膦、三(2,4-二甲基苯基)膦、三(2,5-二甲基苯基)膦、三(2,6-二甲基苯基)膦、三(3,5-二甲基苯基)膦、三(2,4,6-三甲基苯基)膦、三(2,6-二甲基-4-乙氧基苯基)膦、三(2-甲氧基苯基)膦、三(4-甲氧基苯基)膦、三(4-乙氧基苯基)膦、三(4-第三丁氧基苯基)膦、二苯基-2-吡啶基膦、1,2-雙(二苯基膦醯基)乙烷、1,3-雙(二苯基膦醯基)丙烷、1,4-雙(二苯基膦醯基)丁烷、1,2-雙(二苯基膦醯基)乙炔、2,2’-雙(二苯基膦醯基)二苯基醚等之芳香族膦等。Examples of phosphorus-based hardening accelerators include tetrabutylphosphonium bromide, tetrabutylphosphonium chloride, tetrabutylphosphonium acetate, tetrabutylphosphonium caprate, tetrabutylphosphonium laurate, bis(tetrabutylphosphonium Phosphonium) pyromellitate, tetrabutylphosphonium hydrogen hexahydrophthalate, tetrabutylphosphonium 2,6-bis(2-hydroxy-5-methylphenyl)methyl]-4-methanol Aliphatic phosphonium salts such as di-tert-butylmethylphosphonium tetraphenylborate; methyltriphenylphosphonium bromide, ethyltriphenylphosphonium bromide, propyltriphenylphosphonium bromide, Butyltriphenylphosphonium bromide, benzyltriphenylphosphonium chloride, tetraphenylphosphonium bromide, p-tolyltriphenylphosphonium-p-tolyl borate, tetraphenylphosphonium tetraphenylborate , tetraphenylphosphonium tetra-p-tolyl borate, triphenylethylphosphonium tetraphenylborate, tris(3-methylphenyl)ethylphosphonium tetraphenylborate, tris(2-methoxy Phenyl)ethylphosphonium tetraphenylborate, (4-methylphenyl)triphenylphosphonium thiocyanate, tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate Aromatic phosphonium salts such as salts; aromatic phosphine‧borane complexes such as triphenylphosphine‧triphenylborane; aromatic phenylphosphine‧quinone additions such as triphenylphosphine‧p-benzoquinone addition reactants Reactants; tributylphosphine, tri-tertiary butylphosphine, trioctylphosphine, di-tertiary butyl (2-butenyl) phosphine, di-tertiary butyl (3-methyl-2- Aliphatic phosphines such as butenyl)phosphine and tricyclohexylphosphine; dibutylphenylphosphine, di-tert-butylphenylphosphine, methyldiphenylphosphine, ethyldiphenylphosphine, butyldiphenylphosphine Phenylphosphine, diphenylcyclohexylphosphine, triphenylphosphine, tri-o-tolylphosphine, tri-m-tolylphosphine, tri-p-tolylphosphine, tri(4-ethylphenyl)phosphine , Tri(4-propylphenyl)phosphine, tri(4-isopropylphenyl)phosphine, tri(4-butylphenyl)phosphine, tri(4-tert-butylphenyl)phosphine, tri( 2,4-Dimethylphenyl)phosphine, Tris(2,5-Dimethylphenyl)phosphine, Tris(2,6-Dimethylphenyl)phosphine, Tris(3,5-Dimethylphenyl)phosphine base)phosphine, tris(2,4,6-trimethylphenyl)phosphine, tris(2,6-dimethyl-4-ethoxyphenyl)phosphine, tris(2-methoxyphenyl) Phosphine, tris(4-methoxyphenyl)phosphine, tris(4-ethoxyphenyl)phosphine, tris(4-tert-butoxyphenyl)phosphine, diphenyl-2-pyridylphosphine, 1,2-bis(diphenylphosphinoyl)ethane, 1,3-bis(diphenylphosphinoyl)propane, 1,4-bis(diphenylphosphinoyl)butane, 1,2 -Aromatic phosphines such as bis(diphenylphosphinoyl)acetylene and 2,2'-bis(diphenylphosphinoyl)diphenyl ether, etc.

作為脲系硬化促進劑,可舉例例如1,1-二甲基尿素;1,1,3-三甲基尿素、3-乙基-1,1-二甲基尿素、3-環己基-1,1-二甲基尿素、3-環辛基-1,1-二甲基尿素等之脂肪族二甲基尿素;3-苯基-1,1二甲基尿素、3-(4-氯苯基)-1,1-二甲基尿素、3-(3,4-二氯苯基)-1,1-二甲基尿素、3-(3-氯-4-甲基苯基)-1,1-二甲基尿素、3-(2-甲基苯基)-1,1-二甲基尿素、3-(4-甲基苯基)-1,1-二甲基尿素、3-(3,4-二甲基苯基)1,1-二甲基尿素、3-(4-異丙基苯基)-1,1-二甲基尿素、3-(4-甲氧基苯基)-1,1-二甲基尿素、3-(4-硝苯基)-1,1-二甲基尿素、3-[4-(4-甲氧基苯氧基)苯基]-1,1-二甲基尿素、3-[4-(4-氯苯氧基)苯基]-1,1-二甲基尿素、3-[3-(三氟甲基)苯基]-1,1-二甲基尿素、N,N-(1,4-伸苯基)雙(N’,N’-二甲基尿素)、N,N-(4-甲基-1,3-伸苯基)雙(N’,N’-二甲基尿素)[甲苯雙二甲基脲]等之芳香族二甲基脲等。Examples of urea-based hardening accelerators include 1,1-dimethylurea; 1,1,3-trimethylurea, 3-ethyl-1,1-dimethylurea, 3-cyclohexyl-1 , 1-dimethyl urea, 3-cyclooctyl-1,1-dimethyl urea and other aliphatic dimethyl urea; 3-phenyl-1,1 dimethyl urea, 3-(4-chloro Phenyl)-1,1-dimethylurea, 3-(3,4-dichlorophenyl)-1,1-dimethylurea, 3-(3-chloro-4-methylphenyl)- 1,1-Dimethylurea, 3-(2-methylphenyl)-1,1-dimethylurea, 3-(4-methylphenyl)-1,1-dimethylurea, 3 -(3,4-Dimethylphenyl)1,1-dimethylurea, 3-(4-isopropylphenyl)-1,1-dimethylurea, 3-(4-methoxy Phenyl)-1,1-dimethylurea, 3-(4-nitrophenyl)-1,1-dimethylurea, 3-[4-(4-methoxyphenoxy)phenyl] -1,1-Dimethylurea, 3-[4-(4-chlorophenoxy)phenyl]-1,1-dimethylurea, 3-[3-(trifluoromethyl)phenyl] -1,1-dimethylurea, N,N-(1,4-phenylene)bis(N',N'-dimethylurea), N,N-(4-methyl-1,3 -Aromatic dimethyl urea, such as phenylene)bis(N',N'-dimethylurea)[toluene bisdimethylurea], etc.

作為胍系硬化促進劑,可舉例例如二氰二醯胺、1-甲基胍、1-乙基胍、1-環己基胍、1-苯基胍、1-(鄰-甲苯基)胍、二甲基胍、二苯基胍、三甲基胍、四甲基胍、五甲基胍、1,5,7-三氮雜雙環[4.4.0]癸-5-烯、7-甲基-1,5,7-三氮雜雙環[4.4.0]癸-5-烯、1-甲基雙胍、1-乙基雙胍、1-正丁基雙胍、1-正十八烷基雙胍、1,1-二甲基雙胍、1,1-二乙基雙胍、1-環己基雙胍、1-烯丙基雙胍、1-苯基雙胍、1-(鄰-甲苯基)雙胍等。Examples of guanidine hardening accelerators include dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1-(o-tolyl)guanidine, Dimethylguanidine, diphenylguanidine, trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo[4.4.0]dec-5-ene, 7-methyl -1,5,7-Triazabicyclo[4.4.0]dec-5-ene, 1-methylbiguanide, 1-ethylbiguanide, 1-n-butylbiguanide, 1-n-octadecylbiguanide, 1,1-Dimethylbiguanide, 1,1-diethylbiguanide, 1-cyclohexylbiguanide, 1-allylbiguanide, 1-phenylbiguanide, 1-(o-tolyl)biguanide, etc.

作為咪唑系硬化促進劑,可舉例例如2-甲基咪唑、2-十一烷基咪唑、2-十七烷基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰乙基-2-甲基咪唑、1-氰乙基-2-十一烷基咪唑、1-氰乙基-2-乙基-4-甲基咪唑、1-氰乙基-2-苯基咪唑、1-氰乙基-2-十一烷基咪唑鎓偏苯三甲酸鹽、1-氰乙基-2-苯基咪唑翁偏苯三甲酸鹽、2,4-二胺基-6-[2’-甲基咪唑啉-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-十一烷基咪唑啉-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-乙基-4’-甲基咪唑啉-(1’)]乙基-s-三嗪、2,4-二胺基-6-[2’-甲基咪唑啉-(1’)]乙基-s-三嗪異氰尿酸加成物、2-苯基咪唑異氰尿酸加成物、2-苯基4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑、2,3-二氫-1H-吡咯并[1.2-a]苯并咪唑、1-十二烷基-2-甲基-3-苄基咪唑鎓氯化物、2-甲基咪唑咻、2-苯基咪唑咻等之咪唑化合物及咪唑化合物與環氧樹脂之加成物。Examples of imidazole-based hardening accelerators include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methyl Imidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-Benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4- Methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate Triformate, 2,4-diamino-6-[2'-methylimidazoline-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2' -Undecylimidazoline-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazoline-(1' )]ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazoline-(1')]ethyl-s-triazine isocyanuric acid adduct, 2- Phenylimidazole isocyanuric acid adduct, 2-phenyl 4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H- Imidazole compounds such as pyrrolo[1.2-a]benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazolium, 2-phenylimidazolium, and Adduct of imidazole compound and epoxy resin.

作為咪唑系硬化促進劑亦可使用市售品,可舉例例如四國化成工業公司製之「1B2PZ」、「2MZA-PW」、「2PHZ-PW」、三菱化學公司製之「P200-H50」等。Commercially available products can also be used as the imidazole-based hardening accelerator, for example, "1B2PZ", "2MZA-PW", "2PHZ-PW" manufactured by Shikoku Chemical Industry Co., Ltd., "P200-H50" manufactured by Mitsubishi Chemical Corporation, etc. .

作為金屬系硬化促進劑,可舉例例如鈷、銅、鋅、鐵、鎳、錳、錫等之金屬之有機金屬錯合物或有機金屬鹽等。作為有機金屬錯合物之具體例,可舉例乙醯丙酮酸鈷(II)、乙醯丙酮酸鈷(III)等之有機鈷錯合物,乙醯丙酮酸銅(II)等之有機銅錯合物,乙醯丙酮酸鋅(II)等之有機鋅錯合物,乙醯丙酮酸鐵(III)等之有機鐵錯合物,乙醯丙酮酸鎳(II)等之有機鎳錯合物,乙醯丙酮酸錳(II)等之有機錳錯合物等。作為有機金屬鹽,可舉例例如辛酸鋅、辛酸錫、環烷酸鋅、環烷酸鈷、硬脂酸錫、硬脂酸鋅等。Examples of metal-based hardening accelerators include organometallic complexes or organometallic salts of metals such as cobalt, copper, zinc, iron, nickel, manganese, and tin. Specific examples of organometallic complexes include organocobalt complexes such as cobalt(II) acetylacetonate and cobalt(III) acetylacetonate, and organocopper complexes such as copper(II) acetylacetonate. Organic zinc complexes such as zinc (II) acetylpyruvate, organic iron complexes such as iron (III) acetylpyruvate, organic nickel complexes such as nickel (II) acetylpyruvate , Organomanganese complexes such as manganese (II) acetylpyruvate, etc. Examples of organic metal salts include zinc octylate, tin octylate, zinc naphthenate, cobalt naphthenate, tin stearate, zinc stearate, and the like.

作為胺系硬化促進劑,可舉例例如三乙胺、三丁胺等之三烷基胺,4-二甲胺基吡啶、苄基二甲基胺、2,4,6-重(二甲胺基甲基)酚、1,8-氮雜雙環(5,4,0)-十一烯等。As the amine-based hardening accelerator, for example, trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6-heavy (dimethylamine methyl)phenol, 1,8-azabicyclo(5,4,0)-undecene, etc.

作為胺系硬化促進劑亦可使用市售品,可舉例例如Ajinomoto Fin-Techno公司製之「MY-25」等。A commercial item can also be used as an amine hardening accelerator, For example, "MY-25" by Ajinomoto Fin-Techno Co., Ltd. etc. are mentioned.

樹脂組成物層中之(f)硬化促進劑之含量未特別限定,但將樹脂組成物層中之不揮發成分設為100質量%時,較佳為5質量%以下,更佳為1質量%以下,又更佳為0.5質量%以下,特佳為0.2質量%以下。樹脂組成物層中之(f)硬化促進劑之含量下限未特別限定,但將樹脂組成物層中之不揮發成分設為100質量%時,可為例如0質量%以上、0.01質量%以上、0.1質量%以上等。The content of the (f) hardening accelerator in the resin composition layer is not particularly limited, but when the non-volatile content in the resin composition layer is 100% by mass, it is preferably 5% by mass or less, more preferably 1% by mass At most, more preferably at most 0.5% by mass, particularly preferably at most 0.2% by mass. The lower limit of the content of the (f) hardening accelerator in the resin composition layer is not particularly limited, but when the non-volatile content in the resin composition layer is 100% by mass, it may be, for example, 0% by mass or more, 0.01% by mass or more, 0.1% by mass or more.

<(g)其他添加劑> 本發明之樹脂組成物可進而包含任意添加劑作為不揮發成分。作為該等添加劑,可舉例例如過氧化物系自由基聚合起始劑、偶氮系自由基聚合起始劑等之自由基聚合起始劑;環氧丙烯酸酯樹脂、胺基甲酸酯丙烯酸酯樹脂、胺基甲酸酯樹脂、氰酸酯樹脂、苯并噁嗪樹脂、不飽和聚酯樹脂、酚樹脂、三聚氰胺樹脂、矽氧系樹脂等之環氧樹脂以外之熱硬化性樹脂;橡膠粒子等之有機填充材;有機銅化合物、有機鋅化合物、有機鈷化合物等之有機金屬化合物;酞青藍、酞青綠、碘綠、重氮黃、結晶紫、氧化鈦、碳黑等之著色劑;氫醌、兒茶酚、焦棓酚(pyrogallol)、吩噻嗪等之聚合抑制劑;矽氧系調平劑、丙烯酸聚合物系調平劑等之調平劑;BENTONE、蒙脫石等之增黏劑;矽氧系消泡劑、丙烯酸系消泡劑、氟系消泡劑、乙烯基樹脂系消泡劑等之消泡劑;苯并三唑系紫外線吸收劑等之紫外線吸收劑;尿素矽烷等之接著性提升劑;三唑系密著性賦予劑、四唑系密著性賦予劑、三嗪系密著性賦與劑等之密著性賦與劑;受阻酚系抗氧化劑等之抗氧化劑;茋衍生物等之螢光增白劑;氟系界面活性劑、矽氧系界面活性劑等之界面活性劑;磷系難燃劑(例如磷酸酯化合物、膦腈系化合物、膦酸化合物、紅磷)、氮系難燃劑(例如硫酸三聚氰胺)、鹵素系難燃劑、無機系難燃劑(例如三氧化二銻)等之難燃劑;磷酸酯系分散劑、聚氧烯系分散劑、乙炔系分散劑、矽氧系分散劑、陰離子性分散劑、陽離子性分散劑等之分散劑;硼酸酯系安定劑、鈦酸酯系安定劑、鋁酸酯系安定劑、鋯酸酯系安定劑、異氰酸酯系安定劑、碳酸系安定劑、碳酸酸酐系安定劑等之安定劑等。(g)其他添加劑可單獨使用1種,亦可以任意比率組合2種以上使用。(g)其他添加劑之含量若為本技藝者業者即可適宜設定。 <(g)Other additives> The resin composition of the present invention may further contain arbitrary additives as non-volatile components. Examples of such additives include radical polymerization initiators such as peroxide-based radical polymerization initiators and azo-based radical polymerization initiators; epoxy acrylate resins, urethane acrylate resins, etc. Thermosetting resins other than epoxy resins such as resins, urethane resins, cyanate resins, benzoxazine resins, unsaturated polyester resins, phenol resins, melamine resins, and silicone resins; rubber particles Organic fillers such as organic fillers; organometallic compounds such as organic copper compounds, organic zinc compounds, organic cobalt compounds, etc.; colorants such as phthalocyanine blue, phthalocyanine green, iodine green, diazo yellow, crystal violet, titanium oxide, carbon black, etc.; Polymerization inhibitors of hydroquinone, catechol, pyrogallol, phenothiazine, etc.; leveling agents of silicone-based leveling agents, acrylic polymer-based leveling agents, etc.; of BENTONE, montmorillonite, etc. Thickening agent; defoamer of silicone-based defoamer, acrylic defoamer, fluorine-based defoamer, vinyl resin-based defoamer, etc.; benzotriazole-based UV absorber, etc. UV absorber; Adhesive enhancer for urea silane, etc.; Adhesive imparting agent for triazole-based adhesive, tetrazole-based adhesive, triazine-based adhesive, etc.; hindered phenolic antioxidant Antioxidants such as stilbene derivatives; Fluorescent whitening agents such as stilbene derivatives; Surfactants such as fluorine-based surfactants, silicone-based surfactants, etc.; Phosphonic acid compounds, red phosphorus), nitrogen-based flame retardants (such as melamine sulfate), halogen-based flame retardants, inorganic-based flame retardants (such as antimony trioxide) and other flame retardants; phosphate-based dispersants, poly Dispersants such as oxyalkylene-based dispersants, acetylene-based dispersants, silicone-based dispersants, anionic dispersants, and cationic dispersants; borate-based stabilizers, titanate-based stabilizers, aluminate-based stabilizers stabilizers, zirconate-based stabilizers, isocyanate-based stabilizers, carbonic acid-based stabilizers, carbonic anhydride-based stabilizers, etc. (g) Other additives may be used alone or in combination of two or more in arbitrary ratios. (g) The content of other additives can be appropriately set by those skilled in the art.

<(h)有機溶劑> 本發明之樹脂組成物,除了上述不揮發成分以外,有時進而含有任意有機溶劑作為揮發性成分。作為(h)有機溶劑,可適宜使用習知者,其種類未特別限定。作為(h)有機溶劑,可舉例例如丙酮、甲基乙基酮、甲基異丁基酮、環己酮等之酮系溶劑;乙酸甲酯、乙酸乙酯、乙酸丁酯、乙酸異丁酯、乙酸異戊酯、丙酸甲酯、丙酸乙酯、γ-丁內酯等之酯系溶劑;四氫哌喃、四氫呋喃、1,4-二噁烷、二甲醚、二異丙醚、二丁醚、二苯醚、苯甲醚等之醚系溶劑;甲醇、乙醇、丙醇、丁醇、乙二醇等之醇系溶劑;乙酸2-乙氧基乙酯、丙二醇單甲醚乙酸酯、二乙二醇單乙醚乙酸酯、乙基二甘醇乙酸酯、γ-丁內酯、甲氧基丙酸甲酯等之醚酯系溶劑;乳酸甲酯、乳酸乙酯、2-羥基異丁酸甲酯等之酯醇系溶劑;2-甲氧基丙醇、2-甲氧基乙醇、2-乙氧基乙醇、丙二醇單甲醚、二乙二醇單丁醚(丁基卡必醇)等之酯醇系溶劑;N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基-2-吡咯啶酮等之醯胺系溶劑;二甲基亞碸等之亞碸系溶劑;乙腈、丙腈等之腈系溶劑;己烷、環戊烷、環己烷、甲基環己烷等之脂肪族烴系溶劑;苯、甲苯、二甲苯、乙基苯、三甲基苯等之芳香族烴系溶劑等。(h)有機溶劑可單獨使用1種,亦可以任意比率組合2種以上使用。 <(h) Organic solvents> The resin composition of the present invention may further contain an optional organic solvent as a volatile component in addition to the above-mentioned non-volatile components. As (h) organic solvent, a known one can be used suitably, and the kind is not specifically limited. Examples of (h) organic solvents include ketone-based solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; methyl acetate, ethyl acetate, butyl acetate, and isobutyl acetate. , isoamyl acetate, methyl propionate, ethyl propionate, γ-butyrolactone and other ester solvents; tetrahydropyran, tetrahydrofuran, 1,4-dioxane, dimethyl ether, diisopropyl ether , dibutyl ether, diphenyl ether, anisole and other ether-based solvents; methanol, ethanol, propanol, butanol, ethylene glycol and other alcohol-based solvents; 2-ethoxyethyl acetate, propylene glycol monomethyl ether Ether ester solvents such as acetate, diethylene glycol monoethyl ether acetate, ethyl diglycol acetate, γ-butyrolactone, methyl methoxypropionate, etc.; methyl lactate, ethyl lactate , 2-hydroxyisobutyrate methyl ester and other ester alcohol solvents; 2-methoxypropanol, 2-methoxyethanol, 2-ethoxyethanol, propylene glycol monomethyl ether, diethylene glycol monobutyl ether Ester alcohol solvents such as (butyl carbitol); Amides such as N,N-dimethylformamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, etc. Solvents; Arthrine-based solvents such as dimethylsulfide; Nitrile-based solvents such as acetonitrile and propionitrile; Aliphatic hydrocarbon-based solvents such as hexane, cyclopentane, cyclohexane, and methylcyclohexane; Benzene , Toluene, xylene, ethylbenzene, trimethylbenzene and other aromatic hydrocarbon solvents. (h) The organic solvent may be used individually by 1 type, and may use it combining 2 or more types by arbitrary ratios.

乾燥後之樹脂組成物層中之(h)有機溶劑之含量未特別限定,但將樹脂組成物層中之全部成分設為100質量%時,較佳為5質量%以下,更佳為3質量%以下,又更佳為2質量%以下,特佳為1質量%以下。The content of (h) organic solvent in the resin composition layer after drying is not particularly limited, but when all components in the resin composition layer are taken as 100% by mass, it is preferably 5% by mass or less, more preferably 3% by mass % or less, more preferably less than 2 mass %, particularly preferably less than 1 mass %.

<半導體裝置> 可使用藉由本發明之製造方法獲得之印刷配線板,製造包含印刷配線板之半導體裝置。 <Semiconductor Devices> A semiconductor device including a printed wiring board can be manufactured using the printed wiring board obtained by the manufacturing method of the present invention.

作為半導體裝置,可舉例供於電氣製品(例如電腦、行動電話、數位相機及電視等)及交通工具(例如機車、汽車、電車、船舶及飛機等)等之各種半導體裝置。Examples of semiconductor devices include various semiconductor devices used in electrical products (such as computers, mobile phones, digital cameras, and televisions, etc.) and vehicles (such as locomotives, automobiles, trains, ships, and airplanes, etc.).

半導體裝置可藉由對印配線板之導通部位,安裝零件(半導體晶片)而製造。所謂導通部位係指於印刷配線板中傳遞電訊號之部位,其位置可為表面、可為嵌埋部位之任一者。又,半導體晶片若為以半導體作為材料之電子電路元件則未特別限定。A semiconductor device can be manufactured by mounting components (semiconductor chips) on the conduction portion of a printed wiring board. The so-called conductive part refers to the part that transmits electrical signals in the printed wiring board, and its position can be either the surface or the embedded part. Also, the semiconductor wafer is not particularly limited as long as it is an electronic circuit element made of a semiconductor.

製造半導體裝置時之半導體晶片之安裝方法,若為可使半導體晶片有效發揮功能,則未特別限定,具體而言,可舉例藉由打線接合安裝方法、覆晶安裝方法、利用無凸塊增層(BBUL)之安裝方法、利用異向性導電膜(ACF)之安裝方法、非導電性膜(NCF)之安裝方法等。 [實施例] The mounting method of the semiconductor chip in the manufacture of a semiconductor device is not particularly limited as long as the semiconductor chip can effectively function. Specifically, examples include a wire bonding mounting method, a flip chip mounting method, and a bumpless build-up method. (BBUL) mounting method, mounting method using anisotropic conductive film (ACF), mounting method of non-conductive film (NCF), etc. [Example]

以下,藉由實施例具體說明本發明。本發明並未限定於該等實施例。且以下中,表示量之「份」及「%」,只要未另外說明,則分別意指「質量份」及「質量%」。下述說明中之溫度條件,於無特別指定溫度時,為常溫(25℃)下,壓力條件,於無特別指定壓力時,為常壓(0.1MPa)下Hereinafter, the present invention will be specifically described by way of examples. The present invention is not limited to these examples. In addition, in the following, "parts" and "%" indicating amounts mean "parts by mass" and "% by mass", respectively, unless otherwise specified. The temperature conditions in the following descriptions are at normal temperature (25°C) unless otherwise specified, and the pressure conditions are at normal pressure (0.1MPa) unless otherwise specified

<製作例A:樹脂薄片A之製作> 將聯苯芳烷型環氧樹脂(日本化藥公司製「NC-3000H」,環氧當量約271g/eq.) 5份、萘型環氧樹脂(DIC公司製之「HP403SS」,環氧當量約145g/eq.) 10份、雙酚A型環氧樹脂及雙酚F環氧混合品(日鐵化學暨材料公司製「ZX1059」,環氧當量165g/eq.) 5份、活性酯系硬化劑(DIC公司製「HPC-8150-62T」,活性基當量約229g/eq.,固形分61.5質量%之甲苯溶液) 30份、酚系硬化劑(DIC公司製「LA-3018-50P」,活性基當量約151,固形分50%之2-甲氧基丙醇溶液) 5份、苯氧樹脂(三菱化學公司製「YX7553BH30」,固形分30質量%之MEK與環己酮之1:1溶液) 5份、4-二甲胺基吡啶(固形分5質量%之MEK溶液) 4份、MEK 30份及以胺系烷氧基矽烷化合物(信越化學工業公司製「KBM573」)進行表面處理過之球型氧化矽(ADMATECHS公司製「SO-C2」,平均粒徑0.5μm) 80份使用混合機均一分散,獲得清漆狀之樹脂組成物。 <Production example A: Production of resin sheet A> 5 parts of biphenyl arane type epoxy resin ("NC-3000H" manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent is about 271g/eq.), naphthalene type epoxy resin ("HP403SS" manufactured by DIC Corporation, epoxy equivalent About 145g/eq.) 10 parts, bisphenol A type epoxy resin and bisphenol F epoxy mixture ("ZX1059" manufactured by Nippon Steel Chemical and Material Co., Ltd., epoxy equivalent 165g/eq.) 5 parts, active ester Curing agent ("HPC-8150-62T" manufactured by DIC Corporation, toluene solution with an active group equivalent of about 229 g/eq. and a solid content of 61.5% by mass) 30 parts, phenolic curing agent ("LA-3018-50P" manufactured by DIC Corporation) , active group equivalent of about 151, 50% solid content of 2-methoxypropanol solution) 5 parts, phenoxy resin ("YX7553BH30" manufactured by Mitsubishi Chemical Corporation, solid content of 30% by mass MEK and 1 of cyclohexanone: 1 solution) 5 parts, 4-dimethylaminopyridine (MEK solution with a solid content of 5% by mass) 4 parts, MEK 30 parts, and surface treatment with an amine-based alkoxysilane compound ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) 80 parts of treated spherical silicon oxide ("SO-C2" manufactured by ADMATECHS Co., Ltd., average particle size: 0.5 μm) were uniformly dispersed using a mixer to obtain a varnish-like resin composition.

所得之清漆狀樹脂組成物,以使乾燥後之厚度為25μm之方式,以模嘴塗佈器均一塗佈於PET薄膜(LINTEC公司製「AL5」,厚度38μm)上,於80~120℃(平均100℃)乾燥4分鐘獲得樹脂薄片A。The obtained varnish-like resin composition was uniformly coated on a PET film ("AL5" manufactured by Lintec Co., Ltd., thickness 38 μm) with a die coater so that the thickness after drying was 25 μm. average 100° C.) for 4 minutes to obtain a resin sheet A.

<製作例B:樹脂薄片B之製作> 除了將以胺系烷氧基矽烷化合物(信越化學工業公司製「KBM573」)表面處理過之球型氧化矽(ADMATECHS公司製「SO-C2」,平均粒徑0.5μm)之使用量由80份變更成120份,代替活性酯系硬化劑(DIC公司製「HPC-8150-62T」) 30份,而使用活性酯系硬化劑(DIC公司製「HPC-8000-65T」,活性基當量約223g/eq.,固形分65質量%之甲苯溶液) 30份以外,與製作例A同樣製作樹脂薄片B。 <Production example B: Production of resin sheet B> Except that the amount of spherical silicon oxide ("SO-C2" manufactured by ADMATECHS, average particle size 0.5 μm) surface-treated with an amine-based alkoxysilane compound ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) was changed from 80 parts Changed to 120 parts, instead of 30 parts of active ester hardener ("HPC-8150-62T" manufactured by DIC Corporation), active ester hardener ("HPC-8000-65T" manufactured by DIC Corporation, active group equivalent of about 223g /eq., except for 30 parts of toluene solution with a solid content of 65% by mass, resin sheet B was produced in the same manner as Production Example A.

<製作例C:樹脂薄片C之製作> 除了將以胺系烷氧基矽烷化合物(信越化學工業公司製「KBM573」)表面處理過之球型氧化矽(ADMATECHS公司製「SO-C2」,平均粒徑0.5μm)之使用量由80份變更成60份,將活性酯系硬化劑(DIC公司製「HPC-8150-62T」)之使用量由30份變更成45份以外,與製作例A同樣製作樹脂薄片C。 <Production example C: Production of resin sheet C> Except that the amount of spherical silicon oxide ("SO-C2" manufactured by ADMATECHS, average particle size 0.5 μm) surface-treated with an amine-based alkoxysilane compound ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) was changed from 80 parts Resin sheet C was produced in the same manner as Production Example A except that the amount of active ester-based hardener ("HPC-8150-62T" manufactured by DIC Corporation) was changed from 30 parts to 45 parts, except that it was changed to 60 parts.

<製作例D:樹脂薄片D之製作> 除了將以胺系烷氧基矽烷化合物(信越化學工業公司製「KBM573」)表面處理過之球型氧化矽(ADMATECHS公司製「SO-C2」,平均粒徑0.5μm)之使用量由80份變更成100份,將活性酯系硬化劑(DIC公司製「HPC-8150-62T」)之使用量由30份變更成45份,且進而使用碳二醯亞胺系硬化劑(日清紡化學公司製「V-03」,活性基當量約216g/eq.,不揮發分50質量%之甲苯溶液) 5份以外,與製作例A同樣製作樹脂薄片D。 <Production example D: Production of resin sheet D> Except that the amount of spherical silicon oxide ("SO-C2" manufactured by ADMATECHS, average particle size 0.5 μm) surface-treated with an amine-based alkoxysilane compound ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) was changed from 80 parts Change to 100 parts, change the usage amount of active ester hardener ("HPC-8150-62T" manufactured by DIC Corporation) from 30 parts to 45 parts, and further use carbodiimide hardener (manufactured by Nisshinbo Chemical Co., Ltd. "V-03", active group equivalent of about 216g/eq., non-volatile matter 50 mass% toluene solution) except 5 parts, the resin sheet D was produced in the same manner as in production example A.

<製作例E:樹脂薄片E之製作> 除了將以胺系烷氧基矽烷化合物(信越化學工業公司製「KBM573」)表面處理過之球型氧化矽(ADMATECHS公司製「SO-C2」,平均粒徑0.5μm)之使用量由80份變更成140份,將酚系硬化劑(DIC公司製「LA-3018-50P」)之使用量由5份變更成10份,且進而使用低聚苯醚‧苯乙烯樹脂(三菱氣體化學公司製「OPE-2St 1200」,固形分65質量%之甲苯溶液) 15份以外,與製作例A同樣製作樹脂薄片E。 <Production Example E: Production of Resin Sheet E> Except that the amount of spherical silicon oxide ("SO-C2" manufactured by ADMATECHS, average particle size 0.5 μm) surface-treated with an amine-based alkoxysilane compound ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) was changed from 80 parts Change to 140 parts, change the amount of phenolic hardener ("LA-3018-50P" manufactured by DIC Corporation) from 5 parts to 10 parts, and further use oligophenylene ether‧styrene resin (manufactured by Mitsubishi Gas Chemical Co., Ltd. Resin sheet E was prepared in the same manner as in Production Example A except for "OPE-2St 1200", 15 parts of toluene solution with a solid content of 65% by mass.

<製作例F:樹脂薄片F之製作> 除了將以胺系烷氧基矽烷化合物(信越化學工業公司製「KBM573」)表面處理過之球型氧化矽(ADMATECHS公司製「SO-C2」,平均粒徑0.5μm)之使用量由80份變更成140份,將活性酯系硬化劑(DIC公司製「HPC-8150-62T」)之使用量由30份變更成25份,不使用酚系硬化劑(DIC公司製「LA-3018-50P」),進而使用雙酚A二氰酸酯(日本LONZA公司製)BA230S75」,氰酸酯當量約232g/eq.,固形分75質量%之MEK溶液) 15份,將4-二甲胺基吡啶(固形份5質量%之MEK溶液)之時用量由4份變更為2份,且進而使用1-苄基-2-苯基咪唑(固形分5質量%之MEK溶液) 2份以外,與製作例A同樣製作樹脂薄片F。 <Production example F: Production of resin sheet F> Except that the amount of spherical silicon oxide ("SO-C2" manufactured by ADMATECHS, average particle size 0.5 μm) surface-treated with an amine-based alkoxysilane compound ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) was changed from 80 parts Changed to 140 parts, changed the amount of active ester hardener ("HPC-8150-62T" manufactured by DIC Corporation) from 30 parts to 25 parts, and did not use phenolic hardener ("LA-3018-50P" manufactured by DIC Corporation) ”), and then use 15 parts of bisphenol A dicyanate (manufactured by Japan LONZA Company) BA230S75”, the cyanate equivalent is about 232g/eq., and the MEK solution with a solid content of 75% by mass) to mix 4-dimethylamino The amount of pyridine (MEK solution with a solid content of 5% by mass) was changed from 4 parts to 2 parts, and 1-benzyl-2-phenylimidazole (MEK solution with a solid content of 5% by mass) was used in addition to 2 parts, and Resin sheet F was produced in the same manner as production example A.

<製作例G:樹脂薄片G之製作> 除了將以胺系烷氧基矽烷化合物(信越化學工業公司製「KBM573」)表面處理過之球型氧化矽(ADMATECHS公司製「SO-C2」,平均粒徑0.5μm)之使用量由80份變更成120份,不使用活性酯系硬化劑(DIC公司製「HPC-8150-62T」),不使用酚系硬化劑(DIC公司製「LA-3018-50P」),進而使用雙酚A二氰酸酯(日本LONZA公司製「BA230S75」,氰酸酯當量約232g/eq.,固形分75質量%之MEK溶液) 30份,進而替代4-二甲胺基吡啶(固形分5質量%之MEK溶液) 4份而使用1-苄基-2-苯基咪唑(固形分5質量%之MEK溶液) 4份以外,與製作例A同樣製作樹脂薄片G。 <Production example G: Production of resin sheet G> Except that the amount of spherical silicon oxide ("SO-C2" manufactured by ADMATECHS, average particle size 0.5 μm) surface-treated with an amine-based alkoxysilane compound ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) was changed from 80 parts Changed to 120 parts, no active ester hardener ("HPC-8150-62T" manufactured by DIC Corporation), no phenolic hardener ("LA-3018-50P" manufactured by DIC Corporation), and bisphenol A bisphenol A 30 parts of cyanate ("BA230S75" produced by Japan LONZA Co., Ltd., cyanate equivalent of about 232g/eq., solid content of 75 mass% MEK solution) to replace 4-dimethylaminopyridine (solid content of 5 mass% Resin sheet G was produced in the same manner as Production Example A except that 4 parts of MEK solution) and 4 parts of 1-benzyl-2-phenylimidazole (MEK solution with a solid content of 5% by mass) were used.

<製作例H:樹脂薄片H之製作> 除了不使用活性酯系硬化劑(DIC公司製「HPC-8150-62T」),不使用酚系硬化劑(DIC公司製「LA-3018-50P」),進而使用酚酚醛清漆型多官能氰酸酯樹脂(日本LONZA公司製「PT30」,氫酸酯當量約124g/eq.,固形分80質量%之MEK溶液) 25份,替代4-二甲胺基吡啶(固形分5質量%之MEK溶液) 4份而使用1-苄基-2-苯基咪唑(固形分5質量%之MEK溶液) 4份以外,與製作例A同樣製作樹脂薄片H。 <Production example H: Production of resin sheet H> In addition to not using an active ester hardener ("HPC-8150-62T" manufactured by DIC Corporation), a phenolic hardener ("LA-3018-50P" manufactured by DIC Corporation) is not used, and a phenolic novolak type polyfunctional cyanic acid is used 25 parts of ester resin ("PT30" produced by LONZA Co., Ltd. in Japan, hydroester equivalent about 124 g/eq., MEK solution with 80 mass % solid content) to replace 4-dimethylaminopyridine (MEK solution with 5 mass % solid content) ) and 4 parts of 1-benzyl-2-phenylimidazole (MEK solution with a solid content of 5% by mass) was used, and the resin sheet H was produced in the same manner as in Production Example A.

製作例中用以獲得清漆狀之樹脂組成物的原料使用量及不揮發成分量彙整於下述表1。The amount of raw materials used and the amount of non-volatile components used to obtain the varnish-like resin composition in the production examples are summarized in Table 1 below.

Figure 02_image003
Figure 02_image003

<實施例1> (準備積層有樹脂薄片之內層基板之步驟) 準備於兩面表面具有銅層之玻璃布基材環氧樹脂兩面貼銅積層板(銅層厚度18μm,基板厚度0.8mm,松下電工公司製「R1515A」)作為內層基板。將內層基板之兩面藉由浸漬於MEC公司製「CZ8100」進行銅層表面之粗化處理。 <Example 1> (Steps of preparing the inner layer substrate laminated with resin sheets) A glass cloth substrate with copper layers on both surfaces was prepared as an inner layer substrate with epoxy resin double-sided copper-clad laminate (copper layer thickness 18 μm, substrate thickness 0.8 mm, Panasonic Electric Works Co., Ltd. "R1515A"). Roughen the surface of the copper layer by immersing both sides of the inner layer substrate in "CZ8100" manufactured by MEC Corporation.

將製作例A製作之樹脂薄片A,以樹脂組成物層與內層基板接合之方式積層於已進行粗化處理之內層基板之兩面。積層係使用名機製作所公司製之真空加壓式積層機MVLP-500,於溫度100℃進行30秒真空吸引後,藉由以溫度100℃,壓力7.0Kg/cm 2之條件,自PET薄膜上,介隔耐熱橡膠加壓30秒而進行。接著,於大氣壓下,使用SUS鏡板,以溫度100℃,壓力5.5kg/cm 2之條件進行60秒加壓,製作積層有樹脂薄片之內層基板。 The resin sheet A produced in Production Example A was laminated on both sides of the roughened inner-layer substrate in such a manner that the resin composition layer and the inner-layer substrate were bonded. The lamination system uses a vacuum pressurized laminator MVLP-500 manufactured by Meiji Co., Ltd., after vacuum suction at a temperature of 100°C for 30 seconds, by using a temperature of 100°C and a pressure of 7.0Kg/cm 2 , from the PET film , Pressurized for 30 seconds through heat-resistant rubber. Next, under atmospheric pressure, using a SUS mirror plate, pressurize for 60 seconds at a temperature of 100°C and a pressure of 5.5kg/cm 2 to fabricate an inner substrate laminated with a resin sheet.

(形成絕緣層之步驟) 將積層有樹脂薄片之內層基板,以附支撐體之狀態,於130℃加熱30分鐘(預備加熱條件),接著不回到室溫,藉由於180℃加熱30分鐘(熱硬化條件),使樹脂組成物層熱硬化,回到室溫(25℃),形成絕緣層,獲得積層體。所得之絕緣體的最大厚度(自內層基板之銅層與絕緣層之界面至絕緣層與支撐體之界面之距離)為25μm。熱硬化後回到室溫(25℃)。 (Step of forming insulating layer) The inner substrate laminated with the resin sheet is heated at 130°C for 30 minutes (preheating condition) in the state of the support body, and then heated at 180°C for 30 minutes (thermal curing condition) without returning to room temperature. The resin composition layer was thermally cured and returned to room temperature (25° C.) to form an insulating layer to obtain a laminate. The maximum thickness of the obtained insulator (the distance from the interface between the copper layer and the insulating layer of the inner substrate to the interface between the insulating layer and the support) was 25 μm. Return to room temperature (25°C) after thermal hardening.

(對絕緣層開孔之步驟) 絕緣層形成後,以附支撐體之狀態,對位於積層體之一主面側之絕緣層,使用CO 2雷射加工機(HITACHI公司製「LC-K212」),以功率:1.35W,發射數:2,目標孔頂徑:30μm之條件,開孔加工3個部位以上。藉此,形成複數個於內層基板電路導體上開口之俯視略圓形及剖面外型矩形之通孔,於各通孔底面露出內層基板之導體層。 (Step of opening holes in the insulating layer) After the insulating layer is formed, use a CO 2 laser processing machine ("LC-K212" manufactured by HITACHI Co., Ltd. ), under the conditions of power: 1.35W, number of shots: 2, target hole top diameter: 30μm, and process more than 3 parts. Thereby, a plurality of through holes opening on the circuit conductors of the inner substrate are formed, which are substantially circular in plan view and rectangular in cross-section, and the conductor layer of the inner substrate is exposed on the bottom surface of each through hole.

(以T 2(℃)加熱處理絕緣層之步驟) 利用雷射開孔之步驟後,於常壓(0.1MPa)之空氣中,以加熱處理溫度130℃(T 2),加熱處理時間30分鐘之條件進行加熱處理(退火處理)。隨後,回到室溫(25℃),去除支撐體。 (Step of heat-treating the insulating layer at T 2 (°C)) After the step of opening holes by laser, heat at a temperature of 130°C (T 2 ) in air at normal pressure (0.1 MPa) for 30 minutes Heat treatment (annealing treatment) under the same conditions. Then, return to room temperature (25° C.), and remove the support.

(以氧化劑溶液進行去膠渣處理之步驟) 將絕緣層表面於80℃之膨潤液的日本ATOTECH公司製之Swelling Dip Securiganth P中浸漬10分鐘,接著,於80℃之氧化劑的日本ATOTECH公司製之Concentrate Compact CP中浸漬20分鐘,最後,於40℃之中和液的日本ATOTECH公司製之Reduction solution Securiganth P中浸漬5分鐘。隨後於80℃乾燥30分鐘,製作評價基板。 (Step of desmearing treatment with oxidant solution) Immerse the surface of the insulating layer in Swelling Dip Securiganth P manufactured by ATOTECH Corporation of Japan at 80°C for 10 minutes, then dip in Concentrate Compact CP manufactured by ATOTECH Corporation of Japan at 80°C for 20 minutes, and finally, at 40°C Soak for 5 minutes in Reduction solution Securiganth P manufactured by Japan ATOTECH Co., Ltd. in a neutralizing solution. Then, it dried at 80 degreeC for 30 minutes, and produced the evaluation board|substrate.

<實施例2> 將與實施例1同樣方法製作之積層有樹脂薄片之內層基板,以附支撐體之狀態,於130℃加熱30分鐘(預備加熱條件),隨後,回到室溫(25℃)。隨後,以附支撐體之狀態,對位於積層體之一主面側之樹脂組成物層,使用CO 2雷射加工機(HITACHI公司製「LC-K212」),以功率:1.35W,發射數:2及目標孔頂徑:30μm之條件,遍及10個部位以上進行開孔加工。藉此,形成複數個於內層基板之電路導體上開口之俯視略圓形及剖面外型矩形之通孔,於各通孔底面露出內層基板之導體層。隨後,將具備通孔之積層有樹脂薄片之內層基板,藉由於170℃加熱30分鐘(熱硬化條件),使樹脂組成物層熱硬化,形成絕緣層,獲得積層體。隨後,於常壓之空氣中,以加熱處理溫度130℃(T 2),加熱處理時間30分鐘之條件進行加熱處理(退火處理),回到室溫(25℃),去除支撐體,以與實施例1相同之條件進行絕緣層表面之去膠渣處理,製作評價基板。 <Example 2> The resin sheet-laminated inner substrate produced in the same manner as in Example 1 was heated at 130°C for 30 minutes (preparatory heating conditions) in the state of attaching a support, and then returned to room temperature (25 ℃). Then, with the support attached, a CO 2 laser processing machine ("LC-K212" manufactured by HITACHI Co., Ltd.) was used for the resin composition layer located on one of the main surfaces of the laminate. Power: 1.35W, number of shots : 2 and the target hole top diameter: 30μm, the hole processing is carried out over more than 10 parts. In this way, a plurality of through holes opening on the circuit conductors of the inner substrate are formed, which are approximately circular in plan view and rectangular in cross-section, and the conductor layer of the inner substrate is exposed on the bottom surface of each through hole. Subsequently, the resin sheet-laminated inner substrate having through holes was heated at 170° C. for 30 minutes (thermosetting conditions) to thermoset the resin composition layer to form an insulating layer to obtain a laminate. Subsequently, heat treatment (annealing treatment) was carried out under the conditions of heat treatment temperature of 130°C (T 2 ) and heat treatment time of 30 minutes in air at normal pressure, and then returned to room temperature (25°C), and the support body was removed to be compatible with Under the same conditions as in Example 1, desmearing treatment was performed on the surface of the insulating layer to produce an evaluation substrate.

<實施例3> 使用製作例B製作之樹脂薄片B替代樹脂薄片A,進而將加熱處理(退火處理)中之加熱處理溫度(T 2)由130℃變更成115℃以外,以與實施例1同樣方法,製作評價基板。 <Example 3> The resin sheet B produced in Production Example B was used instead of the resin sheet A, and the heat treatment temperature (T 2 ) in the heat treatment (annealing treatment) was changed from 130°C to 115°C, in order to be the same as in Example 1 In the same way, the evaluation substrate was produced.

<實施例4> 使用製作例C製作之樹脂薄片C替代樹脂薄片A,進而將加熱處理(退火處理)中之加熱處理溫度(T 2)由130℃變更成115℃,且將加熱處理時間由30分鐘變更成60分鐘以外,以與實施例1同樣方法,製作評價基板。 <Example 4> Using the resin sheet C produced in Production Example C instead of the resin sheet A, the heat treatment temperature (T 2 ) in the heat treatment (annealing treatment) was changed from 130°C to 115°C, and the heat treatment time was changed from Instead of changing 30 minutes to 60 minutes, an evaluation substrate was produced in the same manner as in Example 1.

<實施例5> 使用製作例D製作之樹脂薄片D替代樹脂薄片A,進而將加熱處理(退火處理)中之加熱處理溫度(T 2)由130℃變更成140℃以外,以與實施例1同樣方法,製作評價基板。 <Example 5> The resin sheet D produced in Production Example D was used instead of resin sheet A, and the heat treatment temperature (T 2 ) in the heat treatment (annealing treatment) was changed from 130°C to 140°C, so as to be the same as in Example 1 In the same way, the evaluation substrate was produced.

<實施例6> 使用製作例E製作之樹脂薄片E替代樹脂薄片A,進而將加熱處理(退火處理)中之加熱處理溫度(T 2)由130℃變更成120℃以外,以與實施例1同樣方法,製作評價基板。 <Example 6> The resin sheet E prepared in Production Example E was used instead of the resin sheet A, and the heat treatment temperature (T 2 ) in the heat treatment (annealing treatment) was changed from 130°C to 120°C, so as to be the same as in Example 1 In the same way, the evaluation substrate was produced.

<實施例7> 使用製作例F製作之樹脂薄片F替代樹脂薄片A,進而將加熱處理(退火處理)中之加熱處理溫度(T 2)由130℃變更成145℃以外,以與實施例1同樣方法,製作評價基板。 <Example 7> The resin sheet F produced in Production Example F was used instead of the resin sheet A, and the heat treatment temperature (T 2 ) in the heat treatment (annealing treatment) was changed from 130°C to 145°C, so as to be the same as in Example 1 In the same way, the evaluation substrate was produced.

<比較例1> 除了於對絕緣層開孔之步驟後,不進行加熱處理(退火處理)而進行去膠渣處理以外,以與實施例1同樣方法,製作評價基板。 <Comparative example 1> An evaluation substrate was produced in the same manner as in Example 1, except that desmearing was performed without heat treatment (annealing treatment) after the step of opening holes in the insulating layer.

<比較例2> 除了將於加熱處理(退火處理)中之加熱處理溫度(T 2)由130℃變更成80℃以外,以與實施例1同樣方法,製作評價基板。 <Comparative Example 2> An evaluation substrate was produced in the same manner as in Example 1 except that the heat treatment temperature (T 2 ) in the heat treatment (annealing treatment) was changed from 130°C to 80°C.

<比較例3> 除了將加熱處理(退火處理)中之加熱處理溫度(T 2)由130℃變更成150℃以外,以與實施例1同樣方法,製作評價基板。 <Comparative example 3> Except having changed the heat processing temperature ( T2 ) in heat processing (annealing process) from 130 degreeC to 150 degreeC, it carried out similarly to Example 1, and produced the evaluation board|substrate.

<比較例4> 使用製作例G製作之樹脂薄片G替代樹脂薄片A,進而將加熱處理(退火處理)中之加熱處理溫度(T 2)由130℃變更成150℃以外,以與實施例1同樣方法,製作評價基板。 <Comparative Example 4> The resin sheet G produced in Production Example G was used instead of the resin sheet A, and the heat treatment temperature (T 2 ) in the heat treatment (annealing treatment) was changed from 130°C to 150°C, so as to be the same as in Example 1 In the same way, the evaluation substrate was produced.

<比較例5> 使用製作例H製作之樹脂薄片H替代樹脂薄片A,進而將加熱處理(退火處理)中之加熱處理溫度(T 2)由130℃變更成170℃以外,以與實施例1同樣方法,製作評價基板。 <Comparative Example 5> The resin sheet H produced in Production Example H was used instead of the resin sheet A, and the heat treatment temperature (T 2 ) in the heat treatment (annealing treatment) was changed from 130°C to 170°C, so as to be the same as in Example 1 In the same way, the evaluation substrate was produced.

<試驗例1:絕緣層之玻璃轉移溫度(T 1)之測定> 將各製作例製作之樹脂薄片A~H,以對應之實施例及比較例之預備加熱條件及熱硬化條件熱硬化,獲得樣本。作為熱機械分析裝置(DMA)使用Seiko Instruments公司製之型式DMS-6100,以「張力模式」測定樣本。測定係以2℃/分升溫,於25℃~240℃之範圍進行。以測定所得之儲存彈性模數(E’)與損失彈性模數(E’’)之比求出之損失正切因數(tanδ)之最大值以小數點第一位四捨五入之值作為絕緣層之玻璃轉移溫度(T 1)。 <Test Example 1: Measurement of the glass transition temperature (T 1 ) of the insulating layer> The resin sheets A~H produced in each production example were thermally cured under the preheating conditions and thermosetting conditions corresponding to the examples and comparative examples to obtain sample. A model DMS-6100 manufactured by Seiko Instruments was used as a thermomechanical analyzer (DMA), and the sample was measured in the "tensile mode". The measurement is carried out at a temperature increase of 2°C/min in the range of 25°C~240°C. The maximum value of the loss tangent factor (tanδ) calculated from the ratio of the measured storage elastic modulus (E') to the loss elastic modulus (E'') is the value rounded to the first decimal place as the insulating layer of glass Transition temperature (T 1 ).

<試驗例2:龜裂之評價> 對各實施例及比較例製作之評價基板中之通孔週邊之表層,使用掃描型電子顯微鏡(Hitachi-Hightech公司製,S-4800)進行龜裂(通孔龜裂)之評價。確認100個通孔周邊之表層中,是否發生破裂,計算未發生破裂(龜裂)之比率,以下述評價基準進行評價。 <Test Example 2: Evaluation of Cracks> Cracks (via hole cracks) were evaluated using a scanning electron microscope (manufactured by Hitachi-Hightech Co., Ltd., S-4800) for the surface layer around the via hole in the evaluation substrate produced in each Example and Comparative Example. Whether or not cracks occurred in the surface layer around the 100 through-holes was confirmed, the ratio of no cracks (cracks) was calculated, and the following evaluation criteria were used for evaluation.

評價基準 「○」:破裂之發生數(龜裂個數)未達20個之情況 「×」:破裂之發生數(龜裂個數)為20個以上之情況 Evaluation benchmark "○": When the number of cracks (number of cracks) is less than 20 "×": When the number of cracks (number of cracks) is 20 or more

將各實施例及比較例使用之樹脂薄片及評價基板之製作方法、各試驗例之測定結果及評價結彙整於下述表2。Table 2 below summarizes the production methods of the resin sheets and evaluation substrates used in each of the examples and comparative examples, the measurement results and evaluation results of each test example.

Figure 02_image005
Figure 02_image005

開孔之時點 「I」:(A-32)步驟後(A-4)步驟前 「II」:(A-31)步驟後(A-32)步驟前 time of opening "I": (A-32) after step (A-4) before step "II": (A-31) after step (A-32) before step

如表2所示,得知絕緣層之形成中使用活性酯系硬化劑,於絕緣層後形成後,藉由將絕緣層以其玻璃轉移溫度T 1(℃)附近(±20℃以內)之溫度T 2(℃)加熱處理,可抑制去膠渣處理(粗化處理)後之龜裂發生。 As shown in Table 2 , it is known that active ester hardener is used in the formation of the insulating layer. Heat treatment at temperature T 2 (°C) can suppress the occurrence of cracks after desmearing treatment (roughening treatment).

Claims (18)

一種印刷配線板之製造方法,其依序包含下述步驟: (A)使具備內層基板與接合於該內層基板上之樹脂組成物層的積層體之樹脂組成物層熱硬化,形成玻璃轉移溫度為T 1(℃)之絕緣層的步驟, (B)於T 2(℃)加熱處理絕緣層之步驟,及 (C)以氧化劑溶液將絕緣層進行去膠渣處理之步驟, 樹脂組成物層包含環氧樹脂及活性酯系硬化劑,且 同時滿足下述式(1)及(2), -20≦T 1-T 2≦20   (1) 60≦T 2≦150     (2)。 A method of manufacturing a printed wiring board, which sequentially includes the following steps: (A) thermosetting a resin composition layer of a laminate including an inner substrate and a resin composition layer bonded to the inner substrate to form a glass The step of transferring the insulating layer at T 1 (°C), (B) the step of heat-treating the insulating layer at T 2 (°C), and (C) the step of desmearing the insulating layer with an oxidant solution, resin composition The material layer includes epoxy resin and active ester hardener, and satisfies the following formulas (1) and (2) at the same time, -20≦T 1 -T 2 ≦20 (1) 60≦T 2 ≦150 (2). 如請求項1之印刷配線板之製造方法,其中(A)步驟依序包含下述步驟: (A-1)準備具備支撐體與設於該支撐體上之樹脂組成物層的樹脂薄片之步驟, (A-2)以使樹脂組成物層與內層基板接合之方式積層樹脂薄片,獲得積層體之步驟,及 (A-3)使樹脂組成物層熱硬化,形成玻璃轉移溫度為T 1(℃)之絕緣層之步驟。 The method for manufacturing a printed wiring board according to claim 1, wherein the step (A) includes the following steps in sequence: (A-1) The step of preparing a resin sheet having a support and a resin composition layer provided on the support , (A-2) a step of laminating resin sheets in such a way that the resin composition layer and the inner substrate are bonded to obtain a laminate, and (A-3) thermosetting the resin composition layer to form a glass transition temperature T 1 (°C) step of insulating layer. 如請求項2之印刷配線板之製造方法,其中(A-3)步驟依序包含下述步驟: (A-31)使樹脂組成物層於比硬化加熱溫度低之預備加熱溫度予以預備加熱之步驟,及 (A-32)使樹脂組成物層於硬化加熱溫度下加熱,使樹脂組成物層熱硬化,形成玻璃轉移溫度為T 1(℃)之絕緣層之步驟。 The method of manufacturing a printed wiring board according to claim 2, wherein the step (A-3) includes the following steps in sequence: (A-31) preheating the resin composition layer at a preliminary heating temperature lower than the curing heating temperature step, and (A-32) heating the resin composition layer at a curing heating temperature to thermally harden the resin composition layer to form an insulating layer having a glass transition temperature of T 1 (°C). 如請求項3之印刷配線板之製造方法,其中硬化加熱溫度為150℃~210℃,且預備加熱溫度為100℃~150℃。The method of manufacturing a printed wiring board as claimed in item 3, wherein the hardening heating temperature is 150°C to 210°C, and the preliminary heating temperature is 100°C to 150°C. 如請求項2之印刷配線板之製造方法,其中(A)步驟係於(A-3)步驟之後,進而包含下述步驟: (A-4)使絕緣層冷卻至30℃以下之步驟。 The method for manufacturing a printed wiring board as in claim 2, wherein step (A) is after step (A-3), and further includes the following steps: (A-4) A step of cooling the insulating layer to 30°C or lower. 如請求項1之印刷配線板之製造方法,其中(A)步驟進而包含下述步驟: (A-5)對絕緣層或樹脂組成物層開孔之步驟。 The method for manufacturing a printed wiring board as in claim 1, wherein step (A) further includes the following steps: (A-5) A step of opening holes in the insulating layer or the resin composition layer. 如請求項6之印刷配線板之製造方法,其中(A-5)步驟係使用雷射而實施。The method of manufacturing a printed wiring board according to Claim 6, wherein the step (A-5) is implemented using a laser. 如請求項6之印刷配線板之製造方法,其中藉由(A-5)步驟所形成之孔包含孔頂徑100μm以下者。The method of manufacturing a printed wiring board according to Claim 6, wherein the holes formed in the step (A-5) include holes with a top diameter of 100 μm or less. 如請求項1之印刷配線板之製造方法,其中(B)步驟之加熱處理時間為10分鐘以上。The method of manufacturing a printed wiring board according to claim 1, wherein the heat treatment time in step (B) is 10 minutes or more. 如請求項1之印刷配線板之製造方法,其中(B)步驟之加熱處理係藉由於氣體環境下加熱絕緣層而進行。The method of manufacturing a printed wiring board according to claim 1, wherein the heat treatment in step (B) is performed by heating the insulating layer in a gas environment. 如請求項1之印刷配線板之製造方法,其中於(C)步驟之後,進而包含(D)於絕緣層表面形成導體層之步驟。The method of manufacturing a printed wiring board according to claim 1, further comprising (D) the step of forming a conductor layer on the surface of the insulating layer after the step (C). 如請求項1之印刷配線板之製造方法,其中T 2(℃)為100(℃)以上。 The method of manufacturing a printed wiring board according to Claim 1, wherein T 2 (°C) is 100 (°C) or higher. 如請求項1之印刷配線板之製造方法,其中T 1-T 2(℃)為-5(℃)~10(℃)。 The method of manufacturing a printed wiring board according to claim 1, wherein T 1 -T 2 (°C) is -5(°C)~10(°C). 如請求項1之印刷配線板之製造方法,其中樹脂組成物層進而包含無機填充材。The method of manufacturing a printed wiring board according to Claim 1, wherein the resin composition layer further contains an inorganic filler. 如請求項14之印刷配線板之製造方法,其中無機填充材之含量,於將樹脂組成物層中之不揮發成分設為100質量%時,為50質量%以上。The method of manufacturing a printed wiring board according to claim 14, wherein the content of the inorganic filler is 50% by mass or more when the non-volatile content in the resin composition layer is 100% by mass. 如請求項1之印刷配線板之製造方法,其中樹脂組成物層進而包含苯氧樹脂。The method of manufacturing a printed wiring board according to claim 1, wherein the resin composition layer further includes a phenoxy resin. 如請求項1之印刷配線板之製造方法,其中樹脂組成物層進而包含自由基聚合性化合物。The method of manufacturing a printed wiring board according to claim 1, wherein the resin composition layer further contains a radically polymerizable compound. 如請求項1之印刷配線板之製造方法,其中樹脂組成物層進而包含氰酸酯系硬化劑。The method of manufacturing a printed wiring board according to claim 1, wherein the resin composition layer further contains a cyanate-based hardener.
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