TW202307171A - 固體金屬泡沫體熱界面材料 - Google Patents

固體金屬泡沫體熱界面材料 Download PDF

Info

Publication number
TW202307171A
TW202307171A TW111118624A TW111118624A TW202307171A TW 202307171 A TW202307171 A TW 202307171A TW 111118624 A TW111118624 A TW 111118624A TW 111118624 A TW111118624 A TW 111118624A TW 202307171 A TW202307171 A TW 202307171A
Authority
TW
Taiwan
Prior art keywords
liquid metal
tim
metal foam
solid metal
solid
Prior art date
Application number
TW111118624A
Other languages
English (en)
Inventor
羅斯 Ｂ 伯恩特森
大衛 Ｐ 索加
Original Assignee
美商銦業公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商銦業公司 filed Critical 美商銦業公司
Publication of TW202307171A publication Critical patent/TW202307171A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
    • C09K5/08—Materials not undergoing a change of physical state when used
    • C09K5/10—Liquid materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
    • C09K5/08—Materials not undergoing a change of physical state when used
    • C09K5/14—Solid materials, e.g. powdery or granular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29083—Three-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29105—Gallium [Ga] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29118—Zinc [Zn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29201—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29205—Gallium [Ga] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29201—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29209—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29305—Gallium [Ga] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29309—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29318—Zinc [Zn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/325—Material
    • H01L2224/32501—Material at the bonding interface
    • H01L2224/32502—Material at the bonding interface comprising an eutectic alloy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/325—Material
    • H01L2224/32505—Material outside the bonding interface, e.g. in the bulk of the layer connector
    • H01L2224/32506—Material outside the bonding interface, e.g. in the bulk of the layer connector comprising an eutectic alloy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0134—Quaternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/163—Connection portion, e.g. seal
    • H01L2924/1632—Disposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/163—Connection portion, e.g. seal
    • H01L2924/164—Material
    • H01L2924/16598—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Combustion & Propulsion (AREA)
  • Thermal Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本發明係關於固體金屬泡沫體熱界面材料及其在電子器件總成中之用途。在一個實施方式中，方法包括：將熱界面材料(thermal interface material；TIM)施加於第一裝置與第二裝置之間以形成總成，該總成具有與該第一裝置之表面呈接觸關係的該TIM之第一表面，及與該第一表面相對且與該第二裝置之表面呈接觸關係的該TIM之第二表面，該TIM包含固體金屬泡沫體及第一液體金屬；以及壓縮該總成以自該TIM形成合金，從而將該第一裝置黏結至該第二裝置。

Description

固體金屬泡沫體熱界面材料
熱耗散為半導體及功率裝置之耐久性及可靠度之關鍵因素。隨著半導體裝置之尺寸減小及效能增加，熱交換器或散熱器(有時亦被稱作熱散播器或蓋)在各種應用中變得愈加常見，以提供用於熱耗散之機構。熱界面材料通常用於產熱半導體裝置與其相關散熱器之間 熱界面材料可用以提供自裝置至散熱器之更高效且可靠之熱傳導。常見熱界面材料為基於金屬之材料，此意謂其與基於聚合物之熱界面材料相比具有極高傳導性。
銦金屬常常用作熱界面材料係歸因於以下特性之組合：1)與競爭熱界面材料相比，熱導率相對較高；2)低流變應力/高延展度；3)在無外部機械夾持機構之情況下針對此類型之應用的機械強度可接受；及4)其為在正常使用期間不會移出黏結區域或出現氣穴之固體材料。銦延性及熱導率使得其作為可壓縮熱界面材料為理想的。
使用銦金屬之傳統熱界面需要半導體晶粒的背面金屬化。此金屬化通常由三個部分組成：1)反應性層、2)障壁層及3)鈍化層。用於積體電路背面之常見金屬化可為例如鈦、鎳及金(分別自晶粒表面)，但許多其他材料可用以提供相同或類似功能。銦將黏結至非金屬表面，諸如半導體晶粒之二氧化矽表面。其對非金屬之黏結強度高足以提供所需機械附接，但對於此等組件而言，較高製程溫度及對晶粒上之銦材料的必要擦洗可能不可行。
金屬泡沫體為氣泡在金屬液體或金屬固體中之分散體，或替代地為穩定金屬粒子在空氣介質中之分散體。固體金屬泡沫體為具有間隙多孔形貌體之結構，其中一些可延伸至泡沫體之外表面區域。其他充氣多孔形貌體可完全或部分包含於金屬半固體內。固體金屬泡沫體將具有小於形成其之金屬或金屬合金的密度。
固體金屬泡沫體已用於結構及解剖目的。例如，對於人造肢體、自行車頭盔及其他結構性組件而言，固體金屬泡沫體因為其重量輕，其具有高強度與重量比，且其具有不考慮衝擊方向而吸收能量之能力而為合乎需要的。此類裝置可由高強度材料製成，諸如釩及鈦合金，其亦與人體無反應且相容。固體金屬泡沫體亦已用作具有流體及氣體/風扇組合之熱交換器。此等熱交換器將由電子或機械裝置產生之熱傳遞至流體介質，通常為空氣或液體冷卻劑。此類多孔形貌體經設計以保持剛性且完整，使得冷卻劑介質可流動穿過固體金屬泡沫體而成為移除熱的一種方式。
本發明之一些實施方式係關於包括金屬泡沫體之材料，該等材料當以分層方式沈積時可合起來作為整體發揮作用以改良或最大化熱界面材料中所需之熱及機械特性。
在一個實施例中，方法包含：將熱界面材料(TIM)施加於第一裝置與第二裝置之間以形成總成，該總成具有：該TIM之第一表面，該第一表面與該第一裝置之表面呈接觸關係，及該TIM之第二表面，該第二表面與該第一表面相對且與該第二裝置之表面呈接觸關係，該TIM包含固體金屬泡沫體及第一液體金屬；以及壓縮該總成以自該TIM形成合金，從而使該第一裝置黏結至該第二裝置。
在一些實施方式中，該第一裝置為產熱裝置，且該第二裝置為熱傳遞裝置。在一些實施方式中，該產熱裝置為半導體晶粒，且該熱傳遞裝置為半導體封裝蓋或散熱器。
在一些實施方式中，該固體金屬泡沫體包含一或多個間隙多孔區域，該等多孔區域自該固體金屬泡沫體之第一表面延伸穿過與該固體金屬泡沫體之第一表面相對之該固體金屬泡沫體的第二表面；且施加該TIM於該第一裝置與該第二裝置之間包含：置放該固體金屬泡沫體於該第一裝置與該第二裝置之間以使得該固體金屬泡沫體之第二表面與該第一裝置之表面呈接觸關係；及施加第一液體金屬於該固體金屬泡沫體之第一表面上以使得該第一液體金屬的一部分經由一或多個間隙多孔區域擴散且到達該第一裝置之表面上。
在一些實施方式中，在壓縮之後，該固體金屬泡沫體之密度增加至小於形成該固體金屬泡沫體之金屬或金屬合金之密度水準。
在一些實施方式中，TIM進一步包含第二液體金屬；且施加該TIM於該第一裝置與該第二裝置之間包含：置放該固體金屬泡沫體於該第一裝置與該第二裝置之間；施加該第一液體金屬於該第二裝置與該固體金屬泡沫體之間；及施加該第二液體金屬於該第一裝置與該固體金屬泡沫體之間。
在一些實施方式中，壓縮該總成包含：向該總成施加壓力以壓縮該固體金屬泡沫體。
在一些實施方式中，施加該第一液體金屬於該第二裝置與該固體金屬泡沫體之間包含：將第一液體金屬擦洗、施配或噴射於該第二裝置表面或該固體金屬泡沫體之第一表面上；且施加該第二液體金屬於該第一裝置與該固體金屬泡沫體之間包含：將第二液體金屬擦洗、施配或噴射於該第一裝置表面或該固體金屬泡沫體之第二表面上。
在一些實施方式中，該固體金屬泡沫體包含銦或銦合金。
在一些實施方式中，該第一液體金屬包含鎵；鎵及銦；鎵、銦及錫；鎵、銦、錫及鋅；或其混合物。
在一些實施方式中，該第一液體金屬為包含氣泡之液體金屬泡沫體。在一些實施方式中，該固體金屬泡沫體包含一或多個自該固體金屬泡沫體之第一表面延伸的間隙多孔區域；且施加該TIM於該第一裝置與該第二裝置之間包含：置放該固體金屬泡沫體於該第一裝置與該第二裝置之間；及施加該第一液體金屬於該固體金屬泡沫體之第一表面上以使得第一液體金屬部分地或完全地填充一或多個間隙多孔區域。
在一些實施方式中，該一或多個間隙多孔區域包含氧化物或塗層以容納第一液體金屬。
在一些實施方式中，在該總成壓縮期間，第一液體金屬與一或多個間隙多孔區域合金化，從而自TIM形成所得合金，該合金具有比固體金屬泡沫體更高之黏度，藉此限制合金在該總成內之移動且改良該固體金屬合金之整體可壓縮性。
在一些實施方式中，該方法進一步包含：藉由將第一液體金屬施加至銦或銦合金塊之表面來形成固體金屬泡沫體。
在一些實施方式中，該第一裝置為第一熱傳遞裝置，且該第二裝置為第二熱傳遞裝置。在一些實施方式中，該第一熱傳遞裝置為半導體封裝蓋，且該第二熱傳遞裝置為散熱器。
在一個實施例中，半導體總成包含：第一裝置；第二裝置；及使該第一裝置與該第二裝置黏結之合金，其中該合金如下形成：施加TIM於該第一裝置與該第二裝置之間以使得該TIM之第一表面與該第一裝置之表面呈接觸關係，且與該第一表面相對之該TIM之第二表面與該第二裝置之表面呈接觸關係，該TIM包含固體金屬泡沫體及第一液體金屬；及壓縮該TIM以自該TIM形成該合金。例如，該第一裝置可為諸如半導體晶粒之產熱裝置，且該第二裝置可為諸如半導體封裝蓋或散熱器之熱傳遞裝置。作為另一實例，該第一裝置可為諸如半導體封裝蓋之第一熱傳遞裝置，且該第二裝置可為諸如散熱器之第二熱傳遞裝置。
在一個實施例中，半導體總成包含：半導體晶粒；熱交換器；及將該半導體晶粒黏結至該熱交換器的TIM合金，而無需使用該半導體晶粒之表面或該熱交換器之表面上的各別金屬化層。
在一些實施方式中，該TIM合金如下形成：將TIM材料置放於該半導體晶粒與該熱交換器之間，該TIM材料包含與該半導體晶粒之表面呈接觸關係之第一液體金屬泡沫體、與該熱交換器之表面呈接觸關係之第二液體金屬泡沫體以及介於該第一液體金屬泡沫體與該第二液體金屬泡沫體之間的金屬墊片；及壓縮該TIM材料，使得第一液體金屬泡沫體及第二液體金屬泡沫體與該金屬墊片合金化，藉此形成該TIM合金。
在一些實施方式中，該TIM合金如下形成：將TIM材料置放於該半導體晶粒與該熱交換器之間，該TIM材料包含與該半導體晶粒之表面呈接觸關係之第一液體金屬、與該熱交換器之表面呈接觸關係之第二液體金屬以及介於該第一液體金屬與該第二液體金屬之間的導熱金屬箔；及壓縮TIM材料，使得第一液體金屬及第二液體金屬與該導熱金屬箔合金化，藉此形成TIM合金。
在一些實施方式中，該TIM材料包含第一液體金屬泡沫體及第二液體金屬泡沫體，該第一液體金屬為第一液體金屬泡沫體之組分，且第二液體金屬為第二液體金屬泡沫體之組分。
在一些實施方式中，該金屬墊片係由銦或銦合金組成。
在一些實施方式中，該導熱箔基本上由銦或銦合金組成。
所揭示技術之其他特徵及態樣結合附圖、自以下詳細描述將變得顯而易見，該等附圖舉例說明根據所揭示技術之實施方式的特徵。本發明內容不意欲限制本文中所描述之任何發明的範疇，其範疇由申請專利範圍及等效物來界定。
應瞭解，前述概念(假設此等概念相互無不一致)之所有組合考慮為本文中所揭示之本發明主題的一部分。詳言之，在本發明結尾處出現之所主張主題的全部組合考慮為本文所揭示之本發明主題的一部分。
相關申請案之交互參照
本申請案主張2021年5月19日申請且名稱為「固體金屬泡沫體熱界面材料」之美國臨時專利申請案第63/190,586號的優先權益，該申請案以全文引用的方式併入本文中。
當自半導體裝置移除熱時，金屬泡沫體因其較高表面積而可為合乎需要的。不同於用於熱結構、解剖及/或熱交換目的之固體金屬泡沫體，可壓縮、可變形且具反應性、同時具有高熱導率及低熱阻的熱界面固體金屬泡沫體可為所需的。為此目的，本發明之實施方式係關於包括金屬泡沫體之材料，該等材料當以分層方式沈積時可合起來作為整體發揮作用以改良或最大化熱界面材料中所需之熱及機械特性。除上文所描述之特性以外，本文中所描述之材料亦可消除對於半導體晶粒之背面金屬化的需要。
圖1A、1B及1C分別說明根據本發明之實施方式之可用作TIM之一部分的固體金屬泡沫體10、20及30之截面視圖。金屬泡沫體可為TIM中所建構的長方形(例如六面)、立方體或成不規則形狀物體，其用於提供半導體總成中之熱傳遞，如下文進一步描述。
圖1A描繪閉孔式固體金屬泡沫體10。閉孔式固體金屬泡沫體10在整個介質中具有間隙多孔區域或氣孔11，但無延伸至外表面之氣孔。
圖1B描繪開孔式固體金屬泡沫體20。開孔式金屬泡沫體20具有延伸至泡沫體外表面之多孔區域或氣孔21。照射於開孔式金屬泡沫體之一側的光將行進通過介質之氣孔21且在對側顯現。
圖1C描繪一種混合氣孔式固體金屬泡沫體30，其為開放式及封閉式金屬泡沫體之組合。泡沫體30具有間隙多孔區域或氣孔31，對於一些側面而言，氣孔31延伸至泡沫體30之外表面；且對於其他側面而言，多孔區域或氣孔32不會穿過泡沫體30之外表面顯現。氣孔延伸之此類表面不必一定為相對側面(例如，金屬泡沫體之頂面及底面)。如在物體成形更複雜之情況下，類似表面可為相對、相鄰或隨機的。
如下文進一步描述，在一些實施方式中，混合氣孔式固體金屬泡沫體可為合乎需要的，此係因為固體金屬泡沫體可同時充當熱界面材料及液體金屬、液體金屬泡沫體、潤滑脂或蠟之容納體。當施配於混合型固體金屬泡沫體之頂部時，液體金屬可經由多孔結構級聯且濕潤至頂部及底部。混合型固體金屬泡沫體之閉孔部分可含有氧化物或塗層以在x及y平面中含有液體金屬且減緩固體泡沫體在液體金屬中之溶解。
固體金屬泡沫體可藉由將氣體注入來自外部來源之熔融液體金屬中、隨後固化來製備。其亦可藉由將氣體釋放發泡劑與熔融金屬混合而在液體金屬中促使氣體形成來製備。在以上方法中之一者之後，充氣之熔融金屬之溫度可降低至低於其固相線溫度且冷卻，從而使其固化，同時維持固體內之多孔、氣態區域。
在另一實施方式中，固體金屬泡沫體可藉由將鹽晶體(諸如NaCl)壓縮至模具中且將熔融金屬傾入容納鹽晶體之模具頂部中來製備。熔融金屬滲入鹽之間且填充鹽晶體周圍之空隙區域。一旦金屬固化，嵌有鹽晶體之固體金屬便可自模具移出且置放於水浴中。鹽晶體溶解於水溶液中，在固體鹽晶體曾駐存之各空間中留下多孔區域，且得到由金屬構成之多孔框架結構。
固體金屬泡沫體可由銦、鎵、銦合金、鎵合金或一些其他適合金屬或金屬合金製成。銦金屬為在室溫下具有86 W m - 1K - 1之相對高熱導率的元素。其柔軟、可延展及具延性。銦金屬的固體與固體金屬泡沫體形式均可壓縮。銦之可壓縮性在呈固體金屬泡沫體時更明顯，因為空氣在泡沫體中的間隙氣穴在壓縮方向上收縮且在垂直於壓縮方向之平面中膨脹。此壓縮改良垂直於壓縮方向之平面中的熱導率，此為熱散播器中合乎需要的。壓縮亦可有助於將TIM牢固地固定在適當位置且促進此三明治結構中之TIM材料與裝置之相對側之間的低接觸阻力。
由於本文所描述之固體金屬泡沫體之結構完整性弱，因此當施加壓縮力時可發生變形。此可確保充分之表面接觸及相對表面之黏著性。在間隙多孔區域完全變形期間，恰好位於金屬泡沫體之各多孔區域上方及下方的延展性金屬可收縮且接觸以向電子傳輸所致之熱流動提供連續金屬通路。在一些實施方式中，經壓縮之固體金屬泡沫體的所得密度可大於未壓縮之固體金屬泡沫體的密度，但小於形成其之金屬或金屬合金的密度。
由於熱傳導在垂直於金屬泡沫體之壓縮平面的方向上增加，因此可將其他材料添加至包括固體金屬泡沫體之TIM中以同樣增加壓縮平面中之熱導率。此類材料包括相變材料，諸如潤滑脂及蠟；低熔點金屬及金屬合金；以及液體金屬，諸如汞、鎵、鎵銦合金及鎵銦錫合金及其各別液體金屬泡沫體。此等材料可施加至固體金屬泡沫體之外表面、金屬泡沫體之間隙多孔部分(例如在開孔式或混合氣孔式金屬泡沫體之情況下)或兩者。
圖2展示用於形成根據本發明之實施方式之半導體總成100之組件的分解視圖，該半導體總成包括TIM 130及TIM 150。在此實例及諸圖中所說明之其他半導體總成實例中，TIM用於被描繪為球狀柵格陣列(ball grid array；BGA)總成之晶片載體中。然而，應瞭解，可利用TIM提供其他半導體總成、晶片載體或表面黏著封裝中之TIM，包括例如平台柵格陣列(land grid arrays；LGA)、接腳柵格陣列(pin grid arrays；PGA)及其類似者。
半導體總成100包括焊球105、半導體晶粒120、TIM 130、半導體封裝蓋140、TIM 150及散熱器160。附接在晶粒120下方(例如，附接至基板之底面)的為焊球105之陣列。焊球中之每一者可耦接至各別襯墊，該各別襯墊可耦接至與晶粒120電耦接的互連件(圖中未示)。以此方式，電信號可在晶粒120與上面置放有總成100之印刷電路板(printed circuit board；PCB) 190之間傳導。半導體封裝蓋或散熱器140經組態以將熱能自晶粒120、經由TIM 130、經由TIM 150轉移至散熱器160。
TIM 130經組態以將晶粒120產生之熱轉移至半導體封裝蓋140。在TIM 130為半導體晶粒120與蓋140之間之熱界面材料的此配置中，TIM 130可被稱作TIM1熱界面材料。
TIM 150經組態以將熱自熱散播器140傳遞至散熱器160。在TIM 150為半導體封裝蓋140與散熱器160之間之熱界面材料的此配置中，TIM 150可被稱為TIM2熱界面材料。
TIM 130包括液體金屬濕潤劑131、固體金屬泡沫體132及液體金屬濕潤劑133。類似地，TIM 150包括液體金屬濕潤劑151、固體金屬泡沫體152及液體金屬濕潤劑153。在此實例中，固體金屬泡沫體132及152為閉孔式，但可藉由使用開孔式或混合氣孔式固體金屬泡沫體實現優點，如下文進一步論述。固體金屬泡沫體132及固體金屬泡沫體152中之每一者可由延展性金屬(例如銦或鎵)或金屬合金(例如銦合金或鎵合金)形成，使得在半導體總成100製造期間，當泡沫體置放於半導體晶粒120與蓋140之間(泡沫體132)或蓋140與散熱器160之間(泡沫體152)時，在泡沫體壓縮期間，其多孔形貌體完全或部分地塌陷。
液體金屬濕潤劑131、133、151及153可包含銦；銦合金；鎵；鎵合金；銦與鎵之組合；鎵、銦與錫之組合；鎵、銦、錫及鋅之組合；其混合物；或在彼此表面接觸置放時可與金屬泡沫體合金化之其他適合液體金屬或金屬合金。例如，液體金屬或金屬合金可在室溫或接近室溫下與金屬泡沫體合金化。在一些實施方式中，液體金屬可為液體金屬泡沫體之組分。在一些實施方式中，液體金屬泡沫體亦可在整個介質中含有氣泡，諸如空氣或氮氣。在其他實施方式中，液體金屬泡沫體可含有原位形成之氧化鎵及/或有意添加之氧化鎵。在其他實施方式中，液體金屬泡沫體可含有有意添加之金屬粒子。在一些實施方式中，液體金屬泡沫體可含有液體金屬、液體金屬之合金、氣泡、氧化鎵、固體金屬粒子或其任何組合。
舉例而言，包含Ga、GaIn、GaInSn或GaInSnZn之室溫液體金屬或液體金屬泡沫體可自發地與銦金屬合金化。當此等液體金屬與含銦固體金屬泡沫體(例如泡沫體132或152)直接接觸置放時，液體鎵或鎵合金將開始溶解固體銦，進一步弱化多孔固體金屬泡沫體。由於液體鎵在多孔銦固體金屬泡沫體中部分溶解，因此該組合可變換成非共晶半固體TIM，該TIM具有用以改良可壓縮性及z方向熱導率、同時維持脆弱半導體晶片之結構完整性的可塑性。
除了對固體金屬泡沫體進行合金化之外，液體金屬濕潤劑亦可免除半導體晶粒120背面金屬化、蓋子140金屬化及/或散熱器160金屬化的要求。液體金屬濕潤劑可充當黏結增強劑以促進TIM黏結至半導體總成之不同組件。此可增強泡沫體(諸如銦泡沫體)黏結至非金屬(諸如晶粒表面)之能力。因此，本文中所描述之實施例可提供額外益處，即無需使用晶粒/晶圓背面金屬化、焊劑施加或固化製程所用的資源。
可採用各種方法向裝置熱堆疊施加液體金屬濕潤劑。可將液體金屬擦洗、施配或噴射至泡沫體、散熱器160、封裝蓋140及/或半導體晶粒120之表面上。例如，液體金屬濕潤劑131可施配於晶粒120上方的表面上，且液體金屬濕潤劑133可擦洗於固體金屬泡沫體132的頂表面上。在下文進一步描述之實施方式中，當液體金屬可流動穿過固體金屬泡沫體之多孔區域且/或與TIM材料合金化且擴散至相對側時，可無需將液體金屬施加至所有表面。
圖3展示用於形成根據本發明之實施方式之包括TIM 210及TIM 220之半導體總成200之組件在液體金屬擴散之前的分解視圖。圖4展示用於形成根據本發明之實施方式之包括TIM 210及TIM 220之半導體總成200之組件在液體金屬擴散之後的分解視圖。半導體總成200包括焊球105、半導體晶粒120、TIM 210、半導體封裝蓋140、TIM 220及散熱器160。
在此實施方式中，TIM 210包括固體金屬泡沫體211及液體金屬濕潤劑212，且TIM 220包括固體金屬泡沫體221及液體金屬濕潤劑222。固體金屬泡沫體211及221為在TIM頂表面及底表面上具有多孔結構之混合氣孔式固體金屬泡沫體。此提供的優點在於可無需將液體金屬分別施加至晶粒120或蓋140之表面。施加於泡沫體之頂表面上的液體金屬可擴散穿過多孔泡沫體TIM之頂面且濕潤至底面結構，降低泡沫體之界面熱阻且藉此改良與TIM結構之壓縮平面垂直之方向上的熱傳導。圖3描繪液體金屬擴散之前的TIM 210及220。圖4描繪液體金屬擴散之後的TIM 210及220。因此，液體金屬之擴散/合金化以此實施方式可在整個TIM結構中發生。液體金屬濕潤劑212及222可具有如上文參考液體金屬濕潤劑131、133、151及153所述類似之組成。
本文所描述之固體金屬泡沫體TIM可提供TIM0配置的特定優點。在TIM0配置中，熱界面材料位於半導體晶粒之表面與散熱器之表面之間且與其直接接觸。習知TIM0配置中遇到之一個問題為當剛性材料以TIM0配置置放於半導體晶片之頂部時，在散熱器置放於剛性熱界面材料之頂部期間，存在晶片碎裂的風險。在習知TIM0材料壓縮期間，損壞晶片之風險增加，此可導致裝置之災難性故障。通常，TIM0施加改用軟材料，諸如潤滑脂、蠟或液體金屬。TIM0施加選擇軟材料，使得在壓縮期間，材料可變形以便液體或糊狀材料在散熱器下方及半導體晶片上方之x-y平面中膨脹時產生較薄黏結線。儘管此等蠟質或液體熱界面材料與晶片及散熱器形成足夠的界面熱接觸，但其傳統上受困於材料自身內的低熱傳輸。
為克服此等挑戰，以引用的方式併入本文中之美國專利第7,593,228號描述包含延展性金屬(諸如鉛、銦或錫)之圖案化導熱箔之用途。金屬箔的圖案化表面促進至少一種積體電路裝置的熱向至少一種散熱器耗散。圖案化表面可變形且適應不平整處，尤其在壓縮期間，由此減少半導體晶片上之力，同時使表面接觸及黏著性最大化。雖然圖案化導熱箔之此等波狀表面形貌體可為晶片提供一定程度之保護，但近年來已存在驅動力以產生與電子裝置之小型化趨勢相容之較薄半導體晶片。此等較薄裝置在TIM壓縮期間可需要額外的機械能吸收，此係因為較薄晶片在壓縮力下更易破裂。
為此目的，圖5展示用於形成根據本發明之實施方式之包括TIM 310之半導體總成300之組件的分解視圖。半導體總成300包括焊球105、半導體晶粒120、TIM 310及散熱器160。TIM 310包括液體金屬濕潤劑311、固體金屬泡沫體312及液體金屬濕潤劑313。固體金屬泡沫體312及液體金屬濕潤劑311、313可具有類似組成且以如上文參考圖1至圖4的固體泡沫體及液體金屬濕潤劑所描述類似的方式施加。固體金屬泡沫體312可如上文所論述為閉孔式、開孔式或混合型。在一些實施方式中，液體金屬濕潤劑311及313為相同的。
如上文所論述，當施加壓縮力時，TIM材料(在此情況下，TIM 310)之較差結構完整性允許發生充分的變形(及機械能吸收)，從而確保充分的表面接觸及對相對表面之黏著性，且保護半導體晶片以防因壓縮力而破裂。另外，液體金屬在多孔固體金屬泡沫體中之部分溶解可將組合變換成非共晶半固體TIM，該TIM的可塑性用以改良可壓縮性及z方向熱導率、同時維持脆弱半導體晶片之結構完整性。因此，本文所描述之TIM組合物可解決TIM呈TIM0配置之半導體總成的前述問題。圖6A至圖6B說明在壓縮固體金屬泡沫體與液體金屬之前(圖6A)及在壓縮固體金屬泡沫體與液體金屬之後(圖6B)之半導體總成300的TIM 310。
在替代性實施方式中，用於TIM0配置中之TIM可不包括液體金屬濕潤劑。例如，圖7展示用於形成根據本發明之實施方式之包括固體金屬泡沫體TIM 410之半導體總成400之組件的分解視圖。半導體總成400包括焊球105、半導體晶粒120、固體金屬泡沫體410及散熱器160。圖8A至8B說明壓縮固體金屬泡沫體之前(圖8A)及壓縮固體金屬泡沫體之後(圖8B)的半導體總成400之固體金屬泡沫體TIM 410。
圖9描繪根據本發明之一些實施方式之具有傳導性或相變材料之混合氣孔式金屬泡沫體的壓縮及填充。如所展示，混合氣孔式固體金屬泡沫體為可壓縮的，且可將液體金屬添加至多孔形貌體中。該混合型結構可提供容納液體金屬且允許液體金屬自上而下流動的優點。
如前述實例說明，可藉由使用TIM與本文中所描述之固體金屬泡沫體來實現各種技術優點。例如，在長方形或立方體固體金屬泡沫體之情況下，六面TIM之一組相對側面可保持開孔式固體金屬泡沫體，而外周平面中之四個其餘側面可保持閉孔。液體金屬、液體金屬泡沫體、潤滑脂、蠟或其他相變材料添加至固體金屬泡沫體之多孔區段中可用於若干目的，包括：增加x-y平面中之熱導率(例如熱散播器)；增加與半導體晶片、蓋及熱散播器平行之z方向上之熱導率；及降低位於晶片與蓋之間的TIM1材料之表面熱阻及/或降低包括於蓋與散熱器之間的TIM2材料之表面熱阻。在TIM0組態的情況下，可降低晶片與散熱器之間的表面熱阻。此與TIM材料之壓縮組合可確保在橫越裝置之溫度梯度給定的情況下發生熱流之充分接觸。另外，本文中所描述之固體金屬泡沫體可提供的優點在於跨越產熱組件之間隙，或橫越多高度電子封裝體提供自調平接觸。
在一些實施方式中，液體金屬泡沫體可充當黏結增強劑以促進TIM黏結至半導體總成之不同組件而不需要各別金屬化。例如，液體金屬泡沫體可免除半導體晶粒背面金屬化、半導體封裝蓋金屬化及/或散熱器金屬化的需求。此可增強例如銦金屬黏結至非金屬(諸如晶粒表面)之能力。
為此目的，圖10說明根據本發明之實施方式之使用TIM 500之半導體總成的實例組態，該TIM包括包夾於液體金屬泡沫體554、555之間以將半導體晶粒358黏結至熱交換器352之固體金屬墊片590。熱交換器可包括散熱器、熱散播器或蓋。在此實例中，將半導體晶粒358黏著至電路板360。焊球374被置放於半導體晶粒358之金屬化襯墊372上且經回焊以將金屬化襯墊372電連接至印刷電路板之電連接件376。378說明施加於半導體裝置358與電路板360之間的底膠。
TIM 500包括液體金屬泡沫體554、金屬墊片590及液體金屬泡沫體555。金屬墊片590可由銦或銦合金製成。液體金屬泡沫體554直接置放於將與TIM 500黏結之半導體晶粒358的表面上，且液體金屬泡沫體555直接置放於將與TIM 500黏結之熱交換器352的表面上。液體金屬泡沫體554及555可與墊片590之銦金屬或銦金屬合金發生合金化以形成TIM合金。此可在室溫下發生，而無需加熱。
因而，在此實例中，不需要向半導體晶粒358施加背面金屬化，原因在於可使TIM 500黏結至半導體裝置358。另外，不需要向熱交換器352施加金屬化，原因在於熱交換器352經由TIM 500與半導體晶粒358接合。在替代性實施方式中，半導體晶粒358或熱交換器352中之一者可能已金屬化。在此等實施方式中，視可直接與固體金屬墊片590合金化的已金屬化組件而定，可自TIM 500省去液體金屬泡沫體554或液體金屬泡沫體555。
液體金屬泡沫體554及555可包含氧化鎵與鎵或鎵合金之混合物。鎵與空氣中之氧氣快速反應以形成薄氧化鎵層。當含鎵液體金屬合金經攪拌、混合、摻合、振盪或藉由一些其他方式攪動而高於其固相線溫度時，表面形成之金屬氧化物變得分散遍佈於液體金屬汞齊中。液體金屬泡沫體中存在此金屬氧化物可對液體金屬流動且黏附至表面之路徑具有顯著影響。相比於其無氧化對應物，液體金屬/液體金屬氧化物混合物之表面張力大大減少。因此，液體金屬/液體金屬氧化物混合物由於其高熱導率及其擴散及黏附於表面之能力而可理想地用作TIM。在一些實施方式中，在氧氣存在的同時，液體金屬之表面上被動地形成金屬氧化物。在一些實施方式中，金屬氧化物可有意地添加至液體金屬合金中。在其他實施方式中，天然存在之金屬氧化物及有意添加之金屬氧化物的組合可存在於同一液體金屬混合物中。
作為另一實例，圖11說明根據本發明之實施方式之使用TIM 600之半導體總成的實例組態，該TIM包括包夾在液體金屬泡沫體554、555之間以將半導體晶粒358黏結至熱交換器352的圖案化導熱金屬箔690。
金屬箔690可製造成具有表面紋理，該表面紋理明顯地改變金屬箔690之區段之厚度，以產生峰及谷之圖案。特定言之，該箔可包括多個第一區域及多個第二區域，該等第一區域具有第一厚度，且該等第二區域具有大於第一厚度之第二厚度，從而在導熱金屬箔上形成圖案化表面。可藉由滾軋成形或衝壓金屬箔而產生圖案，但亦可藉由其他化學或物理方法產生圖案。導熱金屬箔可經組態以促進半導體晶粒358的熱向熱交換器352耗散，且其可由銦或銦合金形成，銦或銦合金可變形且可適應於不平整處，由此符合晶粒358及熱交換器352之至少一個接觸表面中的此類不平整處之形狀。由銦或銦合金製成之箔690可在壓縮界面中以較低的施加應力提供均勻熱阻。銦之延展性可使表面熱阻降至最低且增加熱流(傳導率)。另外，箔690之結構提供比純銦金屬塊更高之可壓縮性。
在半導體晶粒358或熱交換器352中之一者已金屬化之替代實施方式中，TIM 600可省去液體金屬泡沫體554或液體金屬泡沫體555。
在一些實施方式中，為了促進TIM黏結至半導體總成之不同組件而不需要各別金屬化，由銦或銦合金製成之圖案化導熱金屬箔可與施加至半導體晶粒、半導體封裝蓋或散熱器之非金屬化表面的液體金屬聯合使用。為此目的，圖12說明根據本發明之實施方式之使用TIM 700之半導體總成的實例組態，該TIM包括將半導體晶粒358黏結至熱交換器352之圖案化導熱金屬箔690及液體金屬層385、386。
液體金屬層385可直接施加於將與TIM 700黏結之半導體晶粒358的表面上，且液體金屬層386可直接施加於將與TIM 700黏結之熱交換器352的表面上。在總成黏結及置放於金屬箔690之前，可移除液體金屬層，留下各別氧化物晶種層，當與銦合金化時，得到與純銦類似之固體狀的剩餘合金。可用於形成氧化物晶種層之液體金屬可包括例如銦、銦合金、鎵、鎵合金、包括銦與鎵之組合的合金；或在一些情況下添加有錫的前述各者。
因而，圖12所描繪之總成可壓縮至圖案化導熱箔690且將熱交換器352固定至半導體晶粒358。分別移除液體金屬層385及386而留在半導體晶粒358及熱交換器352之表面上的氧化物晶種層可促進箔690之銦金屬或金屬合金在半導體晶粒358及熱交換器352之裸表面上的濕潤。另外，晶種層可與箔690之銦金屬或銦金屬合金發生合金化以形成TIM合金。在半導體晶粒358或熱交換器352中之一者已金屬化之替代實施方式中，TIM 700可省去液體金屬層385或液體金屬層386。
雖然上文已描述了所揭示技術之各種實施例，但應理解，該等實施例係為了舉例而非限制而呈現。同樣地，各圖可描繪所揭示技術之實例架構或其他組態，其有助於理解所揭示技術中可包括的特徵及功能。所揭示技術不限於所說明之實例架構或組態，但所需特徵可使用多種替代架構及組態來實施。另外，關於流程圖、操作描述及方法申請專利範圍，本文中提出步驟之次序不應指示各種實施例的實施係以相同次序來執行所述功能，除非上下文另有規定。
儘管所揭示之技術結合各種例示性實施例及實施方式描述如上，但應理解，在一或多個別實施例中所描述之各種特徵、態樣及功能不限於其在描述其之特定實施例中的應用，而是可單獨或以各種組合應用於所揭示技術之一或多個其他實施例，無論此等實施例是否進行了描述，以及此等特徵是否作為所描述實施例之一部分而呈現。因此，本文中所揭示技術之廣度及範圍不應由任一上述例示性實施例來限制。
除非另有明確規定，否則本文件中所使用之術語及片語及其變體應按照與限制相反之開放含義解釋。作為前述內容之實例：術語「包括」應理解為意謂「包括但不限於」或類似者；術語「實例」用於提供論述中之項目之例示性個例，而非其詳盡或限制性清單。術語「一(a/an)」應理解為「至少一種」、「一或多種」或類似者；以及諸如「習知」、「傳統」、「正常」、「標準」、「已知」等形容詞及類似含義之術語不應被解釋為將所述項限制在給定的時段或截至給定時間可供使用的項目，但實際上應理解為涵蓋現在或將來任何時間可供使用或已知的習知、傳統、正常或標準技術。同樣，在本文件提及對一般熟習此項技術者將顯而易見或已知之技術時，該等技術涵蓋現在或在將來任何時間對熟習此項技術者顯而易見或已知之技術。
在一些情況下存在的寬泛詞語及片語，諸如「一或多個」、「至少」、「但不限於」或其他類似片語，不應理解為意謂在可不存在此等寬泛片語之情況下意欲或需要較窄個案。
另外，本文中所闡述之各種實施例結合例示性方塊圖、流程圖及其他說明而描述。如一般熟習此項技術者在閱讀本文件之後將顯而易知，可實施所說明之實施例及其各種替代方案而不限於所說明之實例。例如，方塊圖及其隨附描述不應被視為要求一特定架構或組態。
應瞭解，前述概念(假設此等概念相互無不一致)之所有組合均考慮為本文中所揭示之發明主題的一部分。詳言之，在本發明中出現之所主張主題的全部組合均考慮為本文所揭示之發明主題的一部分。
10:閉孔式固體金屬泡沫體 11:多孔區域/氣孔 20:開孔式固體金屬泡沫體 21:多孔區域/氣孔 30:混合氣孔式固體金屬泡沫體 100:半導體總成 105:焊球 120:半導體晶粒 130:熱界面材料/TIM 131:液體金屬濕潤劑 132:固體金屬泡沫體 133:液體金屬濕潤劑 140:半導體封裝蓋 150:TIM 151:液體金屬濕潤劑 152:固體金屬泡沫體 153:液體金屬濕潤劑 160:散熱器 190:印刷電路板(PCB) 200:半導體總成 210:TIM 211:固體金屬泡沫體 212:液體金屬濕潤劑 220:TIM 221:固體金屬泡沫體 222:液體金屬濕潤劑 300:半導體總成 310:TIM 311:液體金屬濕潤劑 312:固體金屬泡沫體 313:液體金屬濕潤劑 352:熱交換器 358:半導體晶粒 360:電路板 372:金屬化襯墊 374:焊球 376:電連接件 378:底膠 385:液體金屬層 386:液體金屬層 400:半導體總成 410:固體金屬泡沫體TIM 500:TIM 554:液體金屬泡沫體 555:液體金屬泡沫體 590:固體金屬墊片 600:TIM 690:圖案化導熱金屬箔 700:TIM
參看以下圖式詳細地描述根據一或多個實施方式的本發明。僅出於說明目的提供諸圖，且該等圖僅描繪實例實施方式。此外應注意，為了清楚及容易說明，諸圖中之元件未必已按比例繪製。
本文中所包括之一些圖自不同視角說明所揭示技術之各種實施方式。儘管隨附描述性文字可將此等視圖稱為「俯視」、「仰視」或「側視」視圖，但此類稱呼僅係描述性的且不暗示或要求所揭示技術應以特定空間定向實施或使用，除非另有明確規定。
圖1A描繪根據本發明之實施方式之閉孔式固體金屬泡沫體的截面視圖。
圖1B描繪根據本發明之實施方式之開孔式固體金屬泡沫體的截面視圖。
圖1C描繪根據本發明之實施方式之混合氣孔式固體金屬泡沫體的截面視圖。
圖2展示用於形成根據本發明之實施方式之半導體總成之組件的分解視圖，該半導體總成包括TIM1及TIM2熱界面材料。
圖3展示在液體金屬擴散之前用於形成根據本發明之實施方式之另一半導體總成之組件的分解視圖，該半導體總成包括TIM1及TIM2熱界面材料。
圖4展示在液體金屬擴散之後用於形成根據本發明之實施方式之另一半導體總成之組件的分解視圖，該半導體總成包括TIM1及TIM2熱界面材料。
圖5展示用於形成根據本發明之實施方式之包括TIM0熱界面材料之半導體總成之組件的分解視圖。
圖6A說明將固體金屬泡沫體與液體金屬壓縮在一起之前的圖5之半導體總成。
圖6B說明將固體金屬泡沫體與液體金屬壓縮在一起之後的圖5之半導體總成。
圖7展示用於形成根據本發明之實施方式之半導體總成之組件的分解視圖，該半導體總成包括固體金屬泡沫體TIM0熱界面材料。
圖8A說明壓縮固體金屬泡沫體之前的圖7之半導體總成。
圖8B說明壓縮固體金屬泡沫體之後的圖7之半導體總成。
圖9描繪根據本發明之一些實施方式之具有傳導性或相變材料之混合氣孔式金屬泡沫體的壓縮及填充。
圖10說明根據本發明之實施方式之使用TIM之半導體總成的實例組態，該TIM包括包夾於液體金屬泡沫體之間以將半導體晶粒黏結至熱交換器的固體金屬墊片。
圖11說明根據本發明之實施方式之使用TIM之半導體總成的實例組態，該TIM包括包夾於液體金屬泡沫體之間以將半導體晶粒黏結至熱交換器的圖案化導熱金屬箔。
圖12說明根據本發明之實施方式之使用TIM之半導體總成的實例組態，該TIM包括將半導體晶粒黏結至熱交換器之圖案化導熱金屬箔及液體金屬層。
諸圖並非詳盡的且不將本發明限於所揭示之精確形式。
100:半導體總成
105:焊球
120:半導體晶粒
130:熱界面材料/TIM
131:液體金屬濕潤劑
132:固體金屬泡沫體
133:液體金屬濕潤劑
140:半導體封裝蓋
150:TIM
151:液體金屬濕潤劑
152:固體金屬泡沫體
153:液體金屬濕潤劑
160:散熱器
190:印刷電路板(PCB)

Claims (26)

  1. 一種方法，其包含： 將熱界面材料(thermal interface material；TIM)施加於第一裝置與第二裝置之間以形成總成，該總成具有與該第一裝置之表面呈接觸關係的該TIM之第一表面，及與該第一表面相對且與該第二裝置之表面呈接觸關係的該TIM之第二表面，該TIM包含固體金屬泡沫體及第一液體金屬；及 壓縮該總成以自該TIM形成合金，從而將該第一裝置黏結至該第二裝置。
  2. 如請求項1之方法，其中該第一裝置為產熱裝置，且該第二裝置為熱傳遞裝置。
  3. 如請求項2之方法，其中該產熱裝置為半導體晶粒，且該熱傳遞裝置為半導體封裝蓋或散熱器。
  4. 如請求項1之方法，其中： 該固體金屬泡沫體包含一或多個間隙多孔區域，該等多孔區域自該固體金屬泡沫體之第一表面延伸穿過與該固體金屬泡沫體之該第一表面相對之該固體金屬泡沫體的第二表面；及 將該TIM施加於該第一裝置及該第二裝置之間包含： 將該固體金屬泡沫體置放於該第一裝置與該第二裝置之間，以使得該固體金屬泡沫體之該第二表面與該第一裝置之表面呈接觸關係；及 將該第一液體金屬施加於該固體金屬泡沫體之該第一表面上，以使得該第一液體金屬的一部分經由該一或多個間隙多孔區域擴散且到達該第一裝置之表面上。
  5. 如請求項4之方法，其中在壓縮之後，該固體金屬泡沫體之密度增加至小於形成該固體金屬泡沫體之金屬或金屬合金之密度的水準。
  6. 如請求項1之方法，其中： 該TIM進一步包含第二液體金屬；及 將該TIM施加於該第一裝置與該第二裝置之間包含： 將該固體金屬泡沫體置放於該第一裝置與該第二裝置之間； 將該第一液體金屬施加於該第二裝置與該固體金屬泡沫體之間；及 將該第二液體金屬施加於該第一裝置與該固體金屬泡沫體之間。
  7. 如請求項6之方法，其中壓縮該總成包含：向該總成施加壓力以壓縮該固體金屬泡沫體。
  8. 如請求項6之方法，其中： 將該第一液體金屬施加於該第二裝置與該固體金屬泡沫體之間包含：將該第一液體金屬擦洗、施配或噴射於該第二裝置之表面或該固體金屬泡沫體之第一表面上；及 將該第二液體金屬施加於該第一裝置與該固體金屬泡沫體之間包含：將該第二液體金屬擦洗、施配或噴射於該第一裝置之表面或該固體金屬泡沫體之第二表面上。
  9. 如請求項1之方法，其中該固體金屬泡沫體包含銦或銦合金。
  10. 如請求項9之方法，其中該第一液體金屬包含鎵；鎵及銦；鎵、銦及錫；鎵、銦、錫及鋅；或其混合物。
  11. 如請求項10之方法，其中該第一液體金屬為包含氣泡之液體金屬泡沫體。
  12. 如請求項1之方法，其中： 該固體金屬泡沫體包含一或多個自該固體金屬泡沫體之第一表面延伸的間隙多孔區域；及 將該TIM施加於該第一裝置與該第二裝置之間包含： 將該固體金屬泡沫體置放於該第一裝置與該第二裝置之間；及 將該第一液體金屬施加於該固體金屬泡沫體之該第一表面上，以使得該第一液體金屬部分地或完全地填充該一或多個間隙多孔區域。
  13. 如請求項12之方法，其中該一或多個間隙多孔區域包含氧化物或塗層以容納該第一液體金屬。
  14. 如請求項12之方法，其中在該總成壓縮期間，該第一液體金屬與該一或多個間隙多孔區域合金化，從而自該TIM形成所得合金，該合金具有比該固體金屬泡沫體更高之黏度。
  15. 如請求項1之方法，其進一步包含：藉由將該第一液體金屬施加至銦或銦合金塊之表面來形成該固體金屬泡沫體。
  16. 如請求項15之方法，其中該第一裝置為半導體封裝蓋；且該第二裝置為散熱器。
  17. 一種半導體總成，其包含： 產熱裝置； 熱傳遞裝置；及 將該產熱裝置黏結至該熱傳遞裝置之合金，其中該合金係藉由執行如請求項1至15中任一項之方法而形成。
  18. 如請求項17之半導體總成，其中該產熱裝置為半導體晶粒，且該熱傳遞裝置為半導體封裝蓋或散熱器。
  19. 一種半導體總成，其包含： 第一熱傳遞裝置； 第二熱傳遞裝置；及 將該第一熱傳遞裝置黏結至該第二熱傳遞裝置之合金，其中該合金係藉由執行如請求項1及請求項4至16中任一項之方法而形成。
  20. 如請求項19之半導體總成，其中該第一熱傳遞裝置為半導體封裝蓋，且該第二熱傳遞裝置為散熱器。
  21. 一種半導體總成，其包含： 半導體晶粒； 熱交換器；及 將該半導體晶粒黏結至該熱交換器的熱界面材料(TIM)合金，而不使用該半導體晶粒之表面或該熱交換器之表面上的各別金屬化層。
  22. 如請求項21之半導體總成，其中該TIM合金係如下形成： 將TIM材料置放於該半導體晶粒與該熱交換器之間，該TIM材料包含與該半導體晶粒之表面呈接觸關係之第一液體金屬泡沫體、與該熱交換器之表面呈接觸關係之第二液體金屬泡沫體以及介於該第一液體金屬泡沫體與該第二液體金屬泡沫體之間的金屬墊片；及 壓縮該TIM材料，使得該第一液體金屬泡沫體及該第二液體金屬泡沫體與該金屬墊片合金化，藉此形成該TIM合金。
  23. 如請求項22之半導體總成，其中該金屬墊片係由銦或銦合金組成。
  24. 如請求項21之半導體總成，其中該TIM合金係如下形成： 將TIM材料置放於該半導體晶粒與該熱交換器之間，該TIM材料包含與該半導體晶粒之表面呈接觸關係之第一液體金屬、與該熱交換器之表面呈接觸關係之第二液體金屬以及介於該第一液體金屬與該第二液體金屬之間的導熱金屬箔；及 壓縮該TIM材料，使得該第一液體金屬及該第二液體金屬與該導熱金屬箔合金化，藉此形成該TIM合金。
  25. 如請求項24之半導體總成，其中該TIM材料包含第一液體金屬泡沫體及第二液體金屬泡沫體，該第一液體金屬為該第一液體金屬泡沫體之組分，且該第二液體金屬為該第二液體金屬泡沫體之組分。
  26. 如請求項24之半導體總成，其中該導熱箔基本上由銦或銦合金組成。
TW111118624A 2021-05-19 2022-05-19 固體金屬泡沫體熱界面材料 TW202307171A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202163190586P 2021-05-19 2021-05-19
US63/190,586 2021-05-19

Publications (1)

Publication Number Publication Date
TW202307171A true TW202307171A (zh) 2023-02-16

Family

ID=82319629

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111118624A TW202307171A (zh) 2021-05-19 2022-05-19 固體金屬泡沫體熱界面材料

Country Status (6)

Country Link
US (2) US20220375816A1 (zh)
EP (1) EP4341993A1 (zh)
JP (1) JP2024521093A (zh)
CN (1) CN117652018A (zh)
TW (1) TW202307171A (zh)
WO (1) WO2022245992A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7282929B1 (ja) * 2022-01-07 2023-05-29 レノボ・シンガポール・プライベート・リミテッド 放熱構造の製造方法
US20230254994A1 (en) * 2022-02-09 2023-08-10 Ford Global Technologies, Llc Application interface for metal foam cooling of vehicle electronics
TWI844243B (zh) * 2023-01-18 2024-06-01 宏碁股份有限公司 電子封裝結構
US20240258198A1 (en) * 2023-01-30 2024-08-01 Acer Incorporated Electronic package module
CN116801595A (zh) * 2023-08-02 2023-09-22 深圳市鸿富诚新材料股份有限公司 一种导热材料及其制备方法与应用

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2724033B2 (ja) * 1990-07-11 1998-03-09 株式会社日立製作所 半導体モジユール
US5323294A (en) * 1993-03-31 1994-06-21 Unisys Corporation Liquid metal heat conducting member and integrated circuit package incorporating same
US6196307B1 (en) * 1998-06-17 2001-03-06 Intersil Americas Inc. High performance heat exchanger and method
US6797758B2 (en) * 2000-04-05 2004-09-28 The Bergquist Company Morphing fillers and thermal interface materials
US6653741B2 (en) * 2001-05-24 2003-11-25 Fry's Metals, Inc. Thermal interface material and heat sink configuration
US7141310B2 (en) * 2002-04-17 2006-11-28 Ceramics Process Systems Corporation Metal matrix composite structure and method
US7147367B2 (en) * 2002-06-11 2006-12-12 Saint-Gobain Performance Plastics Corporation Thermal interface material with low melting alloy
TWI275770B (en) * 2004-12-24 2007-03-11 Foxconn Tech Co Ltd Heat dissipation device with heat pipes
US7219713B2 (en) * 2005-01-18 2007-05-22 International Business Machines Corporation Heterogeneous thermal interface for cooling
US7593228B2 (en) 2005-10-26 2009-09-22 Indium Corporation Of America Technique for forming a thermally conductive interface with patterned metal foil
US20080023665A1 (en) * 2006-07-25 2008-01-31 Weiser Martin W Thermal interconnect and interface materials, methods of production and uses thereof
US20080166492A1 (en) * 2007-01-09 2008-07-10 International Business Machines Corporation Metal-graphite foam composite and a cooling apparatus for using the same
US20080191729A1 (en) * 2007-02-09 2008-08-14 Richard Lidio Blanco Thermal interface for electronic chip testing
TW201111734A (en) * 2009-09-16 2011-04-01 Chenming Mold Ind Corp Heat dissipation module and manufacturing method thereof
JP2013528319A (ja) * 2010-05-21 2013-07-08 ノキア シーメンス ネットワークス オサケユキチュア ヒートシンクを部品に熱的に結合する方法及び装置
JP5700504B2 (ja) * 2010-08-05 2015-04-15 株式会社デンソー 半導体装置接合材
US20130224510A1 (en) * 2012-02-29 2013-08-29 General Electric Company System including thermal interface material
US9420731B2 (en) * 2013-09-18 2016-08-16 Infineon Technologies Austria Ag Electronic power device and method of fabricating an electronic power device
US9826662B2 (en) * 2013-12-12 2017-11-21 General Electric Company Reusable phase-change thermal interface structures
DE102015214928A1 (de) * 2015-08-05 2017-02-09 Siemens Aktiengesellschaft Bauteilmodul und Leistungsmodul
CN106929733B (zh) * 2017-03-16 2018-06-19 宁波新瑞清科金属材料有限公司 一种泡沫铝复合的液态金属热界面材料
CN108511407B (zh) * 2018-03-26 2020-07-17 清华大学深圳研究生院 一种热界面材料及其制备方法、应用方法
US20190301814A1 (en) * 2018-04-03 2019-10-03 Nanotek Instruments, Inc. Metallized graphene foam having high through-plane conductivity
KR102705039B1 (ko) * 2018-12-28 2024-09-10 삼성전자주식회사 접착 필름, 이를 이용한 반도체 장치, 및 이를 포함하는 반도체 패키지
US11721607B2 (en) * 2020-01-23 2023-08-08 Intel Corporation Integrated circuit assemblies having metal foam structures
CN112694858B (zh) * 2020-12-29 2022-11-22 哈尔滨工业大学（深圳） 一种金属气凝胶包覆液态金属的导热胶的制备及封装方法

Also Published As

Publication number Publication date
JP2024521093A (ja) 2024-05-28
CN117652018A (zh) 2024-03-05
EP4341993A1 (en) 2024-03-27
US20220375817A1 (en) 2022-11-24
US20220375816A1 (en) 2022-11-24
WO2022245992A1 (en) 2022-11-24

Similar Documents

Publication Publication Date Title
TW202307171A (zh) 固體金屬泡沫體熱界面材料
US7239517B2 (en) Integrated heat spreader and method for using
TWI556374B (zh) 封裝結構及其形成方法
US6867978B2 (en) Integrated heat spreader package for heat transfer and for bond line thickness control and process of making
US20210384103A1 (en) Method of forming semiconductor package with composite thermal interface material structure
KR101021846B1 (ko) 마이크로전자 패키지 및 그 제조 방법과, 다이 방열기조합물 및 시스템
TWM572570U (zh) 積體電路封裝及其之蓋子
US8115301B2 (en) Methods for manufacturing thermally enhanced flip-chip ball grid arrays
JP2009021530A (ja) 絶縁性樹脂膜およびパワーモジュール
KR20110134504A (ko) 얇은 다이 열 인터페이스 재료의 솔더 성막 및 열 처리
US20050211752A1 (en) Metallic solder thermal interface material layer and application of the same
CN1221027C (zh) 具有散热结构的半导体封装件
US10943796B2 (en) Semiconductor device assembly having a thermal interface bond between a semiconductor die and a passive heat exchanger
TWI650816B (zh) 半導體裝置及其製造方法
US11164819B2 (en) Semiconductor package and manufacturing method thereof
US20080265404A1 (en) Structure and Methods of Processing for Solder Thermal Interface Materials for Chip Cooling
JP2011035308A (ja) 放熱板、半導体装置及び放熱板の製造方法
US20240038627A1 (en) Packages with Liquid Metal as Heat-Dissipation Media and Method Forming the Same
EP4300571A1 (en) Power semiconductor module arrangement and method for forming the same
US20240162107A1 (en) Integrated hybrid heat dissipation system that maximizes heat transfer from heterogeneous integration
CN216902911U (zh) 一种复合构件
CN117766410A (zh) 半导体组件及其制造方法
KR20240040372A (ko) 상변화 금속을 적용한 열전도성 복합시트 및 그 제조방법
WO2024173955A2 (en) Metallic thermal interface materials and associated devices, systems, and methods
WO2023250035A1 (en) Metallic thermal interface materials and associated devices, systems, and methods