TW202305197A - Crucible and single crystal furnace - Google Patents
Crucible and single crystal furnace Download PDFInfo
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- TW202305197A TW202305197A TW111139210A TW111139210A TW202305197A TW 202305197 A TW202305197 A TW 202305197A TW 111139210 A TW111139210 A TW 111139210A TW 111139210 A TW111139210 A TW 111139210A TW 202305197 A TW202305197 A TW 202305197A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B29/06—Silicon
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Abstract
Description
本發明屬於矽產品製作技術領域,尤其關於一種坩堝和單晶爐。The invention belongs to the technical field of silicon product production, in particular to a crucible and a single crystal furnace.
直拉法生產單晶矽是目前製備單晶矽的最主要方法,熱場系統是矽材料成晶的最重要的條件之一,熱場的溫度梯度分佈直接影響著是否能順利地拉出單晶和控制單晶的品質好壞,特別是通過直拉法單晶爐生長單晶矽材料的過程中,通常利用石墨熱場提供生長溫度,梯度控制等。具體過程中,是在低真空度且伴有惰性氣體環境中進行多晶原料的熔化,通過籽晶的接觸,旋轉提升製備得到單晶材料,其中熱源主要來自於石墨加熱器。傳統熱場結構中,加熱器普遍以位於坩堝外周的固定加熱器為主,加熱器產生熱能以輻射的形式對坩堝以及內部矽料進行加熱,這種加熱方式為間接加熱,加熱效率較低。The production of single crystal silicon by the Czochralski method is currently the most important method for preparing single crystal silicon. The thermal field system is one of the most important conditions for the crystallization of silicon materials. The temperature gradient distribution of the thermal field directly affects whether the single crystal can be pulled out smoothly. Crystal and control the quality of single crystal, especially in the process of growing single crystal silicon material through the Czochralski method single crystal furnace, the graphite thermal field is usually used to provide growth temperature, gradient control, etc. In the specific process, the polycrystalline raw material is melted in a low vacuum and accompanied by an inert gas environment, and the single crystal material is prepared by contacting the seed crystal and rotating and lifting, and the heat source mainly comes from the graphite heater. In the traditional thermal field structure, the heater is generally a fixed heater located on the outer periphery of the crucible. The heater generates heat energy to heat the crucible and the internal silicon material in the form of radiation. This heating method is indirect heating, and the heating efficiency is low.
為瞭解決上述技術問題,本發明提供一種坩堝和單晶爐,解決加熱效率低的問題。In order to solve the above technical problems, the present invention provides a crucible and a single crystal furnace to solve the problem of low heating efficiency.
為了達到上述目的,本發明實施例採用的技術方案是:一種坩堝,應用於單晶爐內,包括坩堝主體,該坩堝主體的外部圍設有加熱結構,且該加熱結構通過絕緣導熱層與該坩堝主體連接,該加熱結構的外部罩設有隔熱保護罩,且該隔熱保護罩和該坩堝主體合圍形成容納該加熱結構的密封空間。In order to achieve the above purpose, the technical solution adopted in the embodiment of the present invention is: a crucible, which is applied in a single crystal furnace, includes a crucible body, a heating structure is arranged around the outside of the crucible body, and the heating structure is connected to the The crucible main body is connected, and the outer cover of the heating structure is provided with a heat-insulating protective cover, and the heat-insulating protective cover and the crucible main body are enclosed to form a sealed space for accommodating the heating structure.
可選地,該坩堝主體包括多個瓣體,每個該些瓣體上設置有該加熱結構。Optionally, the crucible body includes a plurality of petals, each of which is provided with the heating structure.
可選地,該坩堝主體的底部通過支撐結構支撐,該隔熱保護罩包括頂壁和側壁,該頂壁遠離該側壁的部分與該坩堝主體的頂部搭接,該側壁圍設於該坩堝的四周; 該隔熱保護罩還包括底壁,該底壁與該坩堝主體的底部連接,或者該底壁與該支撐結構連接,或者該底壁與該單晶爐的爐體的底部連接。 Optionally, the bottom of the crucible body is supported by a supporting structure, the heat insulation protection cover includes a top wall and a side wall, the part of the top wall away from the side wall overlaps with the top of the crucible body, and the side wall surrounds the crucible around; The heat insulation protective cover also includes a bottom wall connected to the bottom of the crucible body, or connected to the supporting structure, or connected to the bottom of the furnace body of the single crystal furnace.
可選地,該側壁靠近該坩堝主體的內表面上設置有凹槽,該加熱結構嵌設於該凹槽內。Optionally, a groove is provided on the inner surface of the side wall close to the crucible body, and the heating structure is embedded in the groove.
可選地,該加熱結構包括呈折線狀縱向分佈的條形結構,該加熱結構的起始端和結束端均位於該坩堝主體的底部。Optionally, the heating structure includes strip structures longitudinally distributed in a zigzag shape, and the starting end and the ending end of the heating structure are both located at the bottom of the crucible main body.
可選地,該坩堝主體的外側壁上設置圖案化的凸起以形成呈折線狀的凹槽,該加熱結構容納於該凹槽內形成與該凹槽的圖案相同的圖案。Optionally, patterned protrusions are provided on the outer wall of the crucible body to form a zigzag groove, and the heating structure is accommodated in the groove to form the same pattern as the groove.
可選地,該加熱結構包括: 由該坩堝主體的底部向該坩堝主體的頂部延伸的第一線段; 沿該第一線段的延伸方向分佈的多組分支線段,該分支線段的第一端與該第一線段連接,該分支線段的第二端沿該坩堝主體的周向延伸並多次彎折形成S狀; 第二線段,該第二線段與該第一線段平行,且該第二線段的一端與每個該分支線段的第二端對應連接,另一端延伸至該坩堝主體的底部。 Optionally, the heating structure includes: a first line segment extending from the bottom of the crucible body to the top of the crucible body; A plurality of sets of branch line segments distributed along the extension direction of the first line segment, the first end of the branch line segment is connected to the first line segment, and the second end of the branch line segment extends along the circumference of the crucible body and bends multiple times Fold to form an S shape; A second line segment, the second line segment is parallel to the first line segment, and one end of the second line segment is correspondingly connected to the second end of each branch line segment, and the other end extends to the bottom of the crucible main body.
可選地,該坩堝主體的底部通過支撐結構支撐,該支撐結構包括支撐軸和支撐託盤,該支撐託盤與該坩堝主體連接的一面具有凹槽,該坩堝主體的底部具有與該凹槽相配合的凸起。Optionally, the bottom of the crucible body is supported by a support structure, the support structure includes a support shaft and a support tray, the side of the support tray connected to the crucible body has a groove, and the bottom of the crucible body has a of the bulge.
本發明實施例還提供一種單晶爐,包括爐體,以及上述的坩堝。An embodiment of the present invention also provides a single crystal furnace, including a furnace body, and the above-mentioned crucible.
本發明的有益效果是:該加熱結構通過絕緣導熱層與該坩堝主體連接,通過固定間熱傳導的方式進行加熱,提高加熱效率。The beneficial effect of the present invention is that: the heating structure is connected to the crucible main body through the insulating and heat-conducting layer, and is heated through heat conduction between the fixings, thereby improving the heating efficiency.
為了使本發明的目的、技術方案及優點更加清楚明白,下面結合附圖及實施例,對本發明進行進一步詳細說明。應當理解,此處所描述的具體實施例僅用以解釋本發明,但並不用於限定本發明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention.
需要說明的是,當元件被稱為“固定於”或“設置於”另一個元件,它可以直接在另一個元件上或者間接在所述另一個元件上。當一個元件被稱為是“連接於”另一個元件,它可以是直接連接到另一個元件或間接連接至所述另一個元件上。It should be noted that when an element is referred to as being “fixed” or “disposed on” another element, it may be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.
需要理解的是,術語“長度”、“寬度”、“上”、“下”、“前”、“後”、“左”、“右”、“豎直”、“水準”、“頂”、“底”、“內”、“外”等指示的方位或位置關係為基於附圖所示的方位或位置關係,僅是為了便於描述本發明和簡化描述,而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作,因此不能理解為對本發明的限制。It is to be understood that the terms "length", "width", "top", "bottom", "front", "rear", "left", "right", "vertical", "horizontal", "top" , "bottom", "inner", "outer" and other indicated orientations or positional relationships are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying No device or element must have a specific orientation, be constructed, and operate in a specific orientation and therefore should not be construed as limiting the invention.
此外,術語“第一”、“第二”僅用於描述目的,而不能理解為指示或暗示相對重要性或者隱含指明所指示的技術特徵的數量。由此,限定有“第一”、“第二”的特徵可以明示或者隱含地包括一個或者更多個所述特徵。在本發明的描述中,“多個”的含義是兩個或兩個以上,除非另有明確具體的限定。In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of said features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.
在本發明中,除非另有明確的規定和限定,術語“安裝”、“相連”、“連接”、“固定”等術語應做廣義理解,例如,可以是固定連接,也可以是可拆卸連接,或成一體;可以是機械連接,也可以是電連接;可以是直接相連,也可以通過中間媒介間接相連,可以是兩個元件內部的連通或兩個元件的相互作用關係。對於本領域的具有通常知識者而言,可以根據具體情況理解上述術語在本發明中的具體含義。In the present invention, unless otherwise clearly specified and limited, terms such as "installation", "connection", "connection" and "fixation" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection , or integrated; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediary, and it can be the internal communication of two components or the interaction relationship between two components. Those with ordinary knowledge in the art can understand the specific meanings of the above terms in the present invention according to specific situations.
參考圖1和圖2,相關技術中,相關技術中,單晶爐包括爐體5,爐體5內設置有坩堝(坩堝包括石英坩堝3和石墨坩堝9),坩堝通過支撐結構10支撐,加熱器8普遍以位於坩堝外周的固定為主,加熱器8與坩堝之間是具有一定的距離的,加熱器產生熱能以輻射的形式對坩堝以及內部矽料進行加熱,這種加熱方式為間接加熱,加熱效率較低。Referring to Fig. 1 and Fig. 2, in the related art, in the related art, the single crystal furnace includes a
參考圖2-圖5,針對上述問題,本實施例提供一種坩堝,應用於單晶爐內,包括坩堝主體,該坩堝主體的外部圍設有加熱結構101,且該加熱結構101通過絕緣導熱層與該坩堝主體連接,該加熱結構101的外部罩設有隔熱保護罩102,且該隔熱保護罩102和該坩堝主體合圍形成容納該加熱結構101的密封空間。Referring to Fig. 2-Fig. 5, in view of the above problems, this embodiment provides a crucible, which is applied in a single crystal furnace, including a crucible main body, and a
該坩堝主體的外部圍設有加熱結構101,且該加熱結構101通過絕緣導熱層與該坩堝主體連接,即該絕緣導熱層與該坩堝主體直接接觸,該加熱結構101與該絕緣導熱層直接接觸,即該坩堝主體、該絕緣導熱層和該加熱結構101之間是固定間的直接接觸,對比圖1的結構,這樣的結構連接方式,直接改變了傳統熱場結構在實際應用過程熱量的傳輸方式:從熱輻射到固體間熱傳導的方式轉變,極大的提高了熱場以及設備的熱效率,降低了熱損耗;且位於加熱結構101外側的隔熱保護罩102可將加熱結構101整體包覆,一方面可避免製程過程中生成的氧化物沉積在加熱體表面,影響加熱效果,另一方面也可減少加熱結構101向外熱輻射,維持加熱穩定,降低功耗。The crucible body is surrounded by a
示例性地,該絕緣導熱層採用石墨或陶瓷等材料製成。Exemplarily, the insulating and heat-conducting layer is made of materials such as graphite or ceramics.
示例性地,該坩堝主體的厚度為1-2cm,但並不以此為限。Exemplarily, the thickness of the crucible body is 1-2 cm, but not limited thereto.
在示例性的實施方式中,該坩堝主體包括多個瓣體,每個該些瓣體上設置有該加熱結構101。In an exemplary embodiment, the crucible body includes a plurality of petals, each of which is provided with the
在示例性的實施方式中,該坩堝主體的底部通過支撐結構2支撐,該隔熱保護罩102包括頂壁和側壁,該頂壁遠離該側壁的部分與該坩堝主體的頂部搭接,該側壁圍設於該坩堝的四周;
該隔熱保護罩102還包括底壁,該底壁與該坩堝主體的底部連接,或者該底壁與該支撐結構2連接,或者該底壁與該單晶爐的爐體的底部連接。
In an exemplary embodiment, the bottom of the crucible body is supported by the
在示例性的實施方式中,該側壁靠近該坩堝主體的內表面上設置有凹槽,該加熱結構101嵌設於該凹槽內。In an exemplary embodiment, a groove is provided on the inner surface of the side wall close to the main body of the crucible, and the
在示例性的實施方式中,該加熱結構101包括呈折線狀縱向分佈的條形結構,該加熱結構101的起始端和結束端均位於該坩堝主體的底部。In an exemplary embodiment, the
在示例性的實施方式中,該坩堝主體的外側壁上設置圖案化的凸起以形成呈折線狀的凹槽,該加熱結構101容納於該凹槽內形成與該凹槽的圖案相同的圖案。In an exemplary embodiment, patterned protrusions are provided on the outer wall of the crucible body to form a broken-line groove, and the
在示例性的實施方式中,該加熱結構101包括:
由該坩堝主體的底部向該坩堝主體的頂部延伸的第一線段1011;
沿該第一線段1011的延伸方向分佈的多組分支線段1012,該分支線段1012的第一端與該第一線段1011連接,該分支線段1012的第二端沿該坩堝主體的周向延伸並多次彎折形成S狀;
第二線段1013,該第二線段1013與該第一線段1011平行,且該第二線段1013的一端與每個該分支線段1012的第二端對應連接,另一端延伸至該坩堝主體的底部。
In an exemplary embodiment, the
示例性地,該分支線段1012由該第一線段1011的第一側起始,沿著該坩堝主體的周向方向延伸至該第一線段1011與該第一側相對的另一側,然後反向彎折,經過至少一次彎折形成該分支線段1012。Exemplarily, the
示例性地,該加熱結構101可以包括多個加熱部,多個該加熱部沿該坩堝主體的周向分佈,每個該加熱部包括:
由該坩堝主體的底部向該坩堝主體的頂部延伸的第一線段1011;
沿該第一線段1011的延伸方向分佈的多組分支線段1012,該分支線段1012的第一端與該第一線段1011連接,該分支線段1012的第二端沿該坩堝主體的周向延伸並多次彎折形成S狀;
第二線段1013,該第二線段1013與該第一線段1011平行,且該第二線段1013的一端與每個該分支線段1012的第二端對應連接,另一端延伸至該坩堝主體的底部。
Exemplarily, the
示例性地,該坩堝主體包括多個瓣體,每個瓣體上設置有該加熱結構101,每個瓣體包括相對的兩個側邊,該分支線段1012在兩個側邊之間反復彎折延伸設置。Exemplarily, the crucible body includes a plurality of petals, each petal is provided with the
示例性的實施方式中,該分支線段包括沿該坩堝主體的周向方向延伸的多個子線段,同一分支線段中的相鄰兩個子線段之間的距離相等。In an exemplary embodiment, the branch line segment includes a plurality of sub-line segments extending along the circumferential direction of the crucible main body, and the distance between two adjacent sub-line segments in the same branch line segment is equal.
示例性地,不同的分支線段中的相鄰兩個子線段之間的距離相等。Exemplarily, the distances between two adjacent sub-line segments in different branch line segments are equal.
示例性地,在該坩堝主體的徑向方向上,該加熱結構的厚度為2-3cm,但並不以此為限。Exemplarily, in the radial direction of the crucible body, the thickness of the heating structure is 2-3 cm, but not limited thereto.
示例性的實施方式中,該坩堝主體的底部通過支撐結構2支撐,該支撐結構2包括支撐軸和支撐託盤,該支撐託盤與該坩堝主體連接的一面具有凹槽,該坩堝主體的底部具有與該凹槽相配合的凸起。In an exemplary embodiment, the bottom of the crucible body is supported by a
本發明實施例還提供一種單晶爐,包括爐體,以及上述的坩堝。An embodiment of the present invention also provides a single crystal furnace, including a furnace body, and the above-mentioned crucible.
在實際製程過程中,該坩堝是旋轉的,為了保證在旋轉過程中,該加熱結構101的通電狀態,該單晶爐還包括與該加熱部的引出電極連接的環形電極,該引出電極和該環形電極之間通過導電件連接,該導電件設置於該支撐結構2上,且該導電件的一端穿過該支撐託盤與該加熱結構101的引出電極(該第一線段1011位於該坩堝底部的一端以及該第二線段1013位於該坩堝底部的一端均設置有引出電極)連接,該導電件的另一端與該環形電極連接,且可沿著該環形電極旋轉。During the actual manufacturing process, the crucible is rotated. In order to ensure the energized state of the
該支撐軸的外部圍設有環形殼體,該環形殼體的內壁上凸設有環繞該支撐軸的環形凸起,該環形凸起形成該環形電極,環形電極的數量與該引出電極的數量相對應,該環形殼體的外壁上設置有與該環形電極一一對應連接的外接電極。The support shaft is surrounded by an annular housing, and the inner wall of the annular housing is protruded with an annular protrusion surrounding the support shaft. The annular protrusion forms the annular electrode, and the number of annular electrodes is the same as that of the lead-out electrode. Corresponding to the number, the outer wall of the annular housing is provided with external electrodes connected to the annular electrodes in one-to-one correspondence.
示例性地,該支撐託盤上設置有螺紋安裝孔,該導電件的一端設置有與對應的該引出電極連接的螺栓電極,該導電件的另一端設置於該環形電極連接的連接凸起,在該環形殼體的徑向方向上,該連接凸起的連接面的寬度小於或等於該環形凸起的連接面的寬度,在該環形殼體的軸向方向上,該連接凸起的厚度小於相鄰兩個該環形凸起之間的距離,避免短路。Exemplarily, the support tray is provided with a threaded mounting hole, one end of the conductive member is provided with a bolt electrode connected to the corresponding lead-out electrode, and the other end of the conductive member is provided with a connecting protrusion connected to the ring electrode. In the radial direction of the annular housing, the width of the connecting surface of the connecting protrusion is less than or equal to the width of the connecting surface of the annular housing, and in the axial direction of the annular housing, the thickness of the connecting protrusion is less than The distance between two adjacent ring-shaped protrusions can avoid short circuit.
該單晶爐包括爐體5,該爐體5內設置有坩堝(包括石墨坩堝1和石英坩堝3),坩堝內容納有矽熔體6,晶棒7,坩堝的外部把包覆有加熱結構101,加熱結構101的外部罩設有隔熱保護罩102,該爐體5的內側部還設置有保溫層4。The single crystal furnace includes a
上面結合附圖對本發明的實施例進行了描述,但是本發明並不局限於上述的具體實施方式,上述的具體實施方式僅僅是示意性的,而不是限制性的,本領域的具有通常知識者在本發明的啟示下,在不脫離本發明宗旨和權利要求所保護的範圍情況下,還可做出很多形式,均屬於本發明的保護之內。Embodiments of the present invention have been described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementations, and the above-mentioned specific implementations are only illustrative, rather than restrictive, and those with ordinary knowledge in the art Under the enlightenment of the present invention, many forms can also be made without departing from the gist of the present invention and the protection scope of the claims, all of which belong to the protection of the present invention.
1:石墨坩堝 101:加熱結構 1011:第一線段 1012:分支線段 1013:第二線段 102:隔熱保護罩 2:支撐結構 3:石英坩堝 4:保溫層 5:爐體 6:矽熔體 7:晶棒 8:加熱器 9:石墨坩堝 10:支撐結構 1: Graphite crucible 101: Heating structure 1011: the first line segment 1012: branch segment 1013: the second line segment 102: heat shield 2: Support structure 3: Quartz crucible 4: Insulation layer 5: furnace body 6: Silicon melt 7: Ingot 8: Heater 9: Graphite crucible 10: Support structure
圖1表示相關技術中的單晶爐的結構示意圖; 圖2表示本發明實施例中的單晶爐的結構示意圖; 圖3表示本發明實施例中的坩堝的結構示意圖一; 圖4表示本發明實施例中的坩堝的結構示意圖二; 圖5表示本發明實施例中的加熱結構的結構示意圖。 Fig. 1 shows the structural representation of the single crystal furnace in the related art; Fig. 2 shows the structural representation of the single crystal furnace in the embodiment of the present invention; Fig. 3 shows the structural schematic diagram 1 of the crucible in the embodiment of the present invention; Fig. 4 shows the structural schematic diagram II of the crucible in the embodiment of the present invention; Fig. 5 shows a schematic structural view of the heating structure in the embodiment of the present invention.
1:石墨坩堝 1: Graphite crucible
101:加熱結構 101: Heating structure
102:隔熱保護罩 102: heat shield
2:支撐結構 2: Support structure
3:石英坩堝 3: Quartz crucible
4:保溫層 4: Insulation layer
5:爐體 5: furnace body
6:矽熔體 6: Silicon melt
7:晶棒 7: Ingot
Claims (9)
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KR100588425B1 (en) * | 2003-03-27 | 2006-06-12 | 실트로닉 아게 | Method for the Production of a Silicon Single Crystal, Silicon Single Crystal and Silicon Semiconductor Wafers with determined Defect Distributions |
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