TW202243044A - 脫模膜 - Google Patents
脫模膜 Download PDFInfo
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- TW202243044A TW202243044A TW111105597A TW111105597A TW202243044A TW 202243044 A TW202243044 A TW 202243044A TW 111105597 A TW111105597 A TW 111105597A TW 111105597 A TW111105597 A TW 111105597A TW 202243044 A TW202243044 A TW 202243044A
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- film
- polysilazane
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- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 229920001709 polysilazane Polymers 0.000 claims abstract description 41
- 238000000576 coating method Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000011248 coating agent Substances 0.000 claims abstract description 26
- 239000011347 resin Substances 0.000 claims abstract description 23
- 229920005989 resin Polymers 0.000 claims abstract description 23
- 238000005538 encapsulation Methods 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 229920002799 BoPET Polymers 0.000 claims description 8
- 239000004952 Polyamide Substances 0.000 claims description 8
- 229920002647 polyamide Polymers 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 7
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 6
- 238000003851 corona treatment Methods 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 5
- 229920000515 polycarbonate Polymers 0.000 claims description 5
- 239000004417 polycarbonate Substances 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- -1 polyethylene terephthalate Polymers 0.000 claims description 4
- 229920002302 Nylon 6,6 Polymers 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000178 monomer Substances 0.000 claims description 3
- 238000004381 surface treatment Methods 0.000 claims description 3
- 238000007774 anilox coating Methods 0.000 claims description 2
- 229920000402 bisphenol A polycarbonate polymer Polymers 0.000 claims description 2
- 238000005266 casting Methods 0.000 claims description 2
- 125000004122 cyclic group Chemical group 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 229920006289 polycarbonate film Polymers 0.000 claims description 2
- 229920006267 polyester film Polymers 0.000 claims description 2
- QKDIBALFMZCURP-UHFFFAOYSA-N 1-methyl-1$l^{3}-silinane Chemical compound C[Si]1CCCCC1 QKDIBALFMZCURP-UHFFFAOYSA-N 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 239000012752 auxiliary agent Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000012858 packaging process Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 104
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- 238000001035 drying Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 230000037303 wrinkles Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000748 compression moulding Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 2
- TUGGFUSCPLPUFY-UHFFFAOYSA-N 3-triethoxysilylpropan-1-amine Chemical compound CCO[Si](OCC)(OCC)CCCN.CCO[Si](OCC)(OCC)CCCN TUGGFUSCPLPUFY-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229920004142 LEXAN™ Polymers 0.000 description 1
- 239000004418 Lexan Substances 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 208000028659 discharge Diseases 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical group FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010330 laser marking Methods 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 229940116351 sebacate Drugs 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 230000037373 wrinkle formation Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
- B29C33/68—Release sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C55/00—Shaping by stretching, e.g. drawing through a die; Apparatus therefor
- B29C55/02—Shaping by stretching, e.g. drawing through a die; Apparatus therefor of plates or sheets
- B29C55/10—Shaping by stretching, e.g. drawing through a die; Apparatus therefor of plates or sheets multiaxial
- B29C55/12—Shaping by stretching, e.g. drawing through a die; Apparatus therefor of plates or sheets multiaxial biaxial
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D7/00—Producing flat articles, e.g. films or sheets
- B29D7/01—Films or sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
- H01L21/566—Release layers for moulds, e.g. release layers, layers against residue during moulding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
- B29C2045/14663—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame the mould cavity walls being lined with a film, e.g. release film
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C39/00—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor
- B29C39/02—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor for making articles of definite length, i.e. discrete articles
- B29C39/10—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor for making articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. casting around inserts or for coating articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/18—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Plasma & Fusion (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Silicon Polymers (AREA)
Abstract
描述用於半導體晶粒封裝之脫模膜，特徵在於其於至少一側具有聚矽氮烷之塗層且其於經聚矽氮烷塗布之側的脫離性質係使得其在可固化樹脂於半導體封裝程序中於固化溫度，特別是在120至180℃之範圍的固化溫度，固化之後自脫離。
Description
本發明係關於脫模膜；此等膜在用於封裝(encapsulating)半導體封裝(semiconductor package)之程序中通常施加於模穴表面。於此程序中，半導體晶粒(semiconductor die)係安裝在基板上且引入具備脫模膜之模製機的模穴，且以可固化樹脂封裝從而獲得該半導體封裝。本發明進一步提供製造此脫模膜之方法以及使用此脫模膜製造半導體封裝及電子裝置之方法。
半導體元件之製造為成熟的技術領域。包含經封裝之半導體晶粒(下文稱為組件(component)或半導體封裝(semiconductor package))的電子裝置之製造方法包含封裝步驟(encapsulation step)，其通常藉由轉注模製(transfer molding)或壓縮模製(compression molding)進行。於此步驟中，將包含至少一個安裝於其上之半導體晶粒的基板引入模穴(mold cavity)，隨後以可固化樹脂(通常為環氧樹脂)填充模穴。為防止組件(即，被固化之樹脂(諸如環氧樹脂)圍繞(封裝)之半導體晶粒)黏附於模穴，通常於模穴表面施加脫模膜(mold release film)。
通常，在模製之前，程序係涉及將多個半導體晶粒定位(positioning)且黏合(bonding)至基板，其係隨後整體封裝。在模製之後，將經封裝之半導體晶粒分離(切單(singulated))以獲得個別的組件。該分離步驟通常藉由裁切圍繞個別的半導體晶粒之樹脂及基板來進行以形成組件。
脫模膜之施加對於同時封裝大量半導體晶粒之模具而言特別重要，以使半導體晶粒可易於與模具分離。此對於具有高度結構化表面之大型模穴而言尤其有利。
通常，脫模膜係藉由利用真空(vacuum)之吸力(suction)而固定於模具中。拉伸該膜且使之與模穴表面緊密接觸。於此程序中，脫模膜應緊貼著模穴表面。難題係並非脫模膜與模穴表面之間的全部空氣均被去除，因此少量空氣仍陷在脫模膜與模穴表面之間，造成影響組件表面之外觀的皺紋(wrinkle)。
若與模穴表面接觸之脫模膜的表面有些粗糙度，則空氣抽出(air extraction)可改善。
另一方面，在面向樹脂之側的脫模膜之一定粗糙度對於任何所欲印刷性(printability)而言亦會是有利的，原因是脫模膜之粗糙度係轉移至封裝樹脂，且顏色或用於印刷之墨水係黏附得較佳。粗糙(即，粗(matte))表面亦有利於雷射標記(laser marking)以及表面品質之自動化顯微鏡檢查(automated, microscopic inspection)。
增加膜厚度可防止皺紋(wrinkle)形成，但此種膜較不精確地重現(reproduce)模具輪廓(mold contour)，此會形成不一致的組件(non-uniform component)。
並且，與樹脂接觸之脫模膜的表面之粗糙度不可為任意地大，原因係雖然此改善印刷性，如US 9,613,832 B1所述，但固化之樹脂表面會片狀剝落(flake off)或於封裝之半導體元件切開時會形成龜裂的風險提高。
由於基於實際因素，較佳係脫模膜的兩表面均具有相同設計，US 9,613,832教示將粗糙度設於正面效果及負面效果係最佳化之窄範圍。
然而，儘管表面結構最佳化，但此等先前技術的膜在固化之環氧樹脂層與膜的分離(detachment)方面未令人滿意。
具有極良好脫離值(release value)之材料為鹵化塑膠(halogenated plastics)，諸如氟乙烯系塑膠(fluoroethylene-based plastics)。然而，此等材料不是很環保而且會釋放有毒物質。
已知具有良好脫離之ETFE及其他氟聚合物膜(fluoropolymer film)於處置(disposal)期間造成問題。此外，當此等膜於約180℃之高溫使用時，會從此等膜釋放出HF，其為有毒因此必須持續地從廢氣抽出且去除的氣體。此外，HF腐蝕性極強，其使生產設備之使用壽命減損或增加維護工作。
經聚矽氮烷塗布之封裝膜(packaging film)及技術型膜(technical film)可由WO2006/056285 A1得知。關於封裝材料，描述對氧、二氧化碳或水之阻擋效果(barrier effect)，關於技術型膜，描述較高抗刮性、化學抗性或UV保護效果。
有幾個文件討論經表面處理之模具等，諸如WO2012/157073、US2020044189、US20200096772、及US20040004823。
因此，需要改良之脫模膜及用以製造脫模膜及半導體封裝的改良方法。因此，本發明一目的係減少當前技術之此等缺點中的至少一些缺點。
此等目的係藉由下列達成
‧ 如本發明之第一態樣及請求項1中所定義之膜，
‧ 如本發明之第二態樣及請求項11中所定義之膜的製造，以及
‧ 如本發明之第三態樣及請求項13中所定義之半導體封裝的製造。
下文茲更詳細說明本發明。應瞭解本說明書中所提供/揭露之各種實施態樣、較佳者及範圍可隨意組合。此外，視具體實施態樣而定，所選擇之定義、實施態樣或範圍可未應用。
除非另外說明，否則下列
定義將應用於本說明書：
除非本文另外表明或與內容顯有抵觸，否則如本文所使用之術語「一(a/an)」、「該」及本發明之內容(尤其是請求項之內容)中所使用之相似術語應解釋為涵蓋單數型(singular)與複數型(plural)二者。如本文所使用之術語「包括」、「含有」、及「包含」係於本文中以其開放、非限制性意義使用。
於本發明之內容中，術語膜(film)(諸如脫模膜)及箔(foil)(諸如脫模箔)係可互換或同義地使用。除非具體內容暗示差異，否則技術人士知道術語脫離膜(release film)、脫離箔(release foil)及脫離片(release sheet)具有實質上相同意義。
於本發明之內容中，術語「半導體晶粒(semiconductor die)」(亦稱為「半導體元件(semiconductor element)」)係指藉由裁切(cutting)/鋸切(sawing)對應之晶圓所獲得的實體。半導體晶粒為商品且係大規模製造，彼等包含例如用於行動裝置之晶片(chip)、用於顯示裝置之晶片、具有積體電路之電腦元件等。
於本發明之內容中，「脫模膜(mold release film)」含有(即，包含或由其組成)如本文所述之「聚矽氮烷塗層」)以及如本文所述之「適於塗布之膜」。塗層覆蓋適於塗布之膜的至少一側。
發明說明
於第一態樣中，本發明提供脫模膜。此脫模膜係適用於半導體晶粒封裝(semiconductor die
encapsulation)。此脫模膜的至少一側具有聚矽氮烷(polysilazane)塗層，且聚矽氮烷塗布側之脫離性質(release property)(脫離(release))係使得在可固化環氧樹脂於半導體晶粒之封裝程序中且於選擇用於固化之溫度(固化溫度)（特別是在120至180℃之範圍的固化溫度）固化之後，該膜自脫離(self-release)。脫模膜提供一些有益效果。
首先，脫模膜耐高溫且同時顯示良好或改良之脫離性質(良好或改良之脫離)。高溫範圍通常擴展至185℃，但在特定情況下可高達200℃。
其次，脫模膜可為薄的且適於應用於模穴表面而無空氣滯留(air entrapment)。
第三，脫模膜較佳提供可易於標記之組件的表面。
第四，脫模膜使得能使用不含鹵素、特別是不含氟之材料。
第五，脫模膜使得能使用替代的膜材料，諸如聚酯，特別是聚對酞酸乙二酯(polyethylene terephthalate)(PET)或聚醯胺(PA)或聚碳酸酯(PC)，作為脫模膜，特別是用於封裝半導體晶粒之脫模膜。
第六，可有大尺寸之脫模膜，諸如寬度＞1m及長度＞100m。
以下更詳細解釋本發明之此態樣：
脫離：脫離(release)可根據DIN EN 2243-1:2007-04於選擇用於固化之溫度(固化溫度)（特別是在120至180℃之範圍的固化溫度）測定，較佳，即，小於0.02 N/50 mm。於替代實施態樣中，觀察到低於0.3 N/50mm之脫離。此值亦適於經選擇之應用。
用於測定脫離之適合的測量設備為得自ZwickRoell、「500N zwicki」型、型號：BT2-FZ0.5TN.D16.001之張力測試機(tensile testing machine)。適合的測量程式(measuring program)為「testControl 2」程式。
測定脫離性質(自發性脫離(the spontaneous release))之另一方式係例如藉由使用Sumitomo G730作為環氧樹脂於150℃以15巴(bar)之壓力進行封裝程序5分鐘(min)。於仍然熱之模具開啟時，根據本發明之膜自發性地自脫離(self-release)。
適合以聚矽氮烷塗布之膜：適合之膜包含特別是聚酯膜諸如聚對酞酸乙二酯(PET)膜、及聚醯胺膜(polyamide film)諸如聚醯胺66(PA66)、以及聚碳酸酯(PC)。
目前較佳之膜為PET膜，諸如雙軸定向PET膜(biaxially oriented PET film)(BoPET膜)。
另一較佳之膜為聚醯胺膜，諸如PA6或PA66膜。
另一較佳之膜為聚碳酸酯膜，諸如雙酚-A-聚碳酸酯膜(Bisphenol-A-polycarbonate film)。
根據本發明之待塗布之膜的膜厚度通常在23至100 µm之範圍，較佳係在50至85 µm之範圍，特別是50至75 µm。
此等膜為商品或可根據熟知之程序製造。該膜通常大於1m2，經常以寬度為1,5 m及長度＞100m之捲(roll)提供。
此等膜可經表面處理或可不經表面處理。於第一實施態樣中，此膜係經表面處理。此表面處理於該領域中已知且包含在空氣中之電暈放電處理(corona discharge treatment)、於有機化合物之存在下的電暈放電處理、電漿放電處理(plasma discharge treatment)等。較佳的，膜係藉由在空氣中之電暈放電處理來進行表面處理。
於另一實施態樣中，適於塗布之膜係未經處理但包含底塗層(primer layer)或粗漆層(rough lacquer layer)。
於另一替代實施態樣中，適於塗布之膜係未經處理且無底塗層或漆層。已發現本文所述之塗層不需要表面處理或黏著劑層(adhesive layer)。
聚矽氮烷塗層：膜之塗層可依給定之製造程序中的具體需求而不同。然而，以薄膜為佳，通常低於2 µm且高於0.1 µm，經常為約1 µm。
較佳的，根據本發明之膜亦具有0.2至3.5 µm之平均算術粗糙度(average arithmetic roughness)Ra以及0.5-18.0 µm之平均粗糙度深度(average roughness depth)Rz。
如上述，膜粗糙度通常在Ra 0.2至3.5 µm以及Rz 0.5至18.0 µm之範圍。於較佳實施態樣中，Ra為0.4至2.0 µm，尤佳為約0.5至0.8 µm以及Rz為3.0至14.0 µm，尤其為約4.5至6.5 µm。
粗糙度之測定為本領域所熟知，適合之裝置為例如MarSurf M 300 C。適宜地，粗糙度之測量係根據標準(norm)DIN EN ISO 4288:1998-04及DIN 4771:1977-04進行。
原則上，WO2006/056285 A1中所述之全部聚矽氮烷均適於塗布。然而，目前較佳者為環狀及/或直鏈及/或支鏈有機聚矽氮烷，除了氫，其僅含有少量有機基(organic radical)，特別是C1-C4烷基，諸如甲基及/或乙基，尤其是甲基。極適合的聚矽氮烷為例如二甲基矽氮烷(dimethylsilazane)及一甲基矽氮烷(monomethylsilazane)單體之共聚物。
於實施態樣中，聚矽氮烷塗層係直接施加於如上所定義的適於塗布之膜上。已發現不需要在塗層與適於塗布之膜之間的額外的層，諸如阻氣層(gas resistant layer)。
於實施態樣中，在聚矽氮烷塗層與如上所定義的適於塗布之膜之間提供黏著劑底塗層(adhesive primer layer)或粗漆層。
表面張力：聚矽氮烷之施加應使得經塗布表面在乾燥狀態具有22,5-30 mN/m之表面張力(surface tension)，較佳為23-29 mN/m，更佳為24-26 mN/m。待塗布之膜(例如，未塗布之PET膜)的表面張力較佳係在48-52 mN/m之範圍。表面張力可根據已知方法測定；根據本發明，其係以Krüss MobileDrop GH11(使用供液滴形狀分析(drop shape analysis)之DSA2軟體)測量。
樹脂：根據本發明之脫模膜適於與常用於封裝半導體晶粒之所有環氧樹脂一起使用。此等環氧樹脂為熟習本領域之人士已知且包含液態環氧樹脂(liquid epoxy resin)(在120至150℃之溫度範圍固化)及粒狀樹脂(granular resin)(在140至180℃之溫度處理(process)及固化(cure))二者。實例為Sumitomo G730(用於壓縮模製(compression molding)之粒狀樹脂)、Panasonic XV5791S4B(用於壓縮模製之液態(liquid)/糊狀(paste)樹脂)或者Henkel Loctite Hysol樹脂(用於轉注模製(transfer molding)之呈圓柱形的固態樹脂(solid resin))。
於第二態樣中，本發明提供如本文所述之脫模膜的製造。已發現可使用商用起始材料及已知設備。此被視為是優點且於下文更詳細說明：
廣義而言，本發明之脫模膜可藉由進行如下概述之步驟(a)及(b)而獲得
步驟(a-i)：提供待塗布之膜。膜可藉由如前述之電暈處理或電漿處理而預處理。
步驟(a-ii)提供含有聚矽氮烷化合物之液體。通常，將聚矽氮烷化合物溶於溶劑中。視需要地添加本領域慣用之添加劑。聚矽氮烷之濃度可在廣範圍內變動，通常為0.5-50 wt%，諸如1-10 wt%。液體之黏度可在廣範圍內變動，通常黏度與水相當。
步驟(a-iii)：將該液體施加至該膜之至少一表面從而獲得塗層。
步驟(b)：乾燥該塗層從而獲得該脫模膜。
於一實施態樣中，根據本發明之脫模膜可藉由使待塗布之膜連續通過填充聚矽氮烷及視需要的助劑於溶劑中之混合物的浸漬槽(dip tank)而製造，任何過量溶液係藉由對轉滾筒(counter-rotating roller)刮除(scrape off)。隨後，所施加之溶液係在至少一乾燥區中乾燥，通常於100至130℃之溫度。
於另一實施態樣中，可藉由網紋輥(anilox roller)、繞線刮刀(wire doctor blade)或縫模(slot die)將聚矽氮烷塗層施加至待塗布之膜，以製造根據本發明之脫模膜。隨後，所施加之溶液係在至少一乾燥區中乾燥，通常於100至130℃之溫度。
發明之方法可適用於R2R程序(R2R process)。此使得可製造大型之脫模膜，諸如寬度＞2m及長度＞100m。
本發明進一步提供可藉由本文所述方法獲得或是藉由本文所述方法獲得之脫模膜。
於第三態樣中，本發明提供涉及本發明脫模膜之半導體封裝的製造。再次，已發現可使用商用起始材料及已知設備。本文所述之脫模膜的實施，提高半導體封裝之生產速率以及亦提供商業規模之更穩定程序。此被視為是優點且係於下文更詳細說明：
因此，本發明提供用於製造半導體封裝之方法，該方法包含下列步驟：
(x-i)：對模穴(mold cavity)提供如本文所述之脫模膜。
(x-ii)：提供一或多個黏於基板之半導體晶粒。
(x-iii)：將黏於基板之半導體晶粒置於模穴內。
(y-i)：以可固化樹脂(curable resin)封裝(encapsulating
)黏於基板之半導體晶粒，此封裝可藉由本領域中之已知方法進行，包括模製技術(molding technique)，較佳為壓縮模製(compression molding)或射出成形(injection molding)，以及鑄製技術(casting technique)，較佳為模鑄(die casting)。
(y-ii)：使如此獲得之半導體封裝(semiconductor package)從模穴脫離。已發現此步驟特別改善，原因係不需要特殊措施以將半導體封裝從模穴移出。此被視為商業製造等級之顯著優點。
(z)：視需要地分離(separating)或進一步加工(processing)該半導體封裝。例如，半導體封裝可進一步組裝以獲得SD記憶卡(SD memory card)、電腦晶片、感測器(sensor)等。
起始材料：
含有聚矽氮烷之適用塗布組成物為市售者，例如，商業產品PROTect Easy Clean(來自MIPA SE，
D-84051 Essenbach)、或Durazane 1500 Rapid Cure(來自Merck KGaA，D-64271 Darmstadt)。根據對應之數據單(data sheet)，商業產品含有下列組分：
PROTect Easy Clean：
- 25-50%有機聚矽氮烷化合物(organic polysilazane compound)，CAS：475645-84-2(環矽氮烷(Cyclosilazanes)、di-Me、Me氫(Me hydrogen)、具有di-Me之聚合物、Me氫矽氮烷(Me hydrogen silazanes)，與3-(三乙氧基矽基)-1-丙胺(3-(triethoxysilyl)-1-propanamine)之反應產物)。
- 至少50%乙酸正丁酯(溶劑乙酸正丁酯係於塗布/乾燥期間蒸發。)
- 5至10% 3-胺基丙基三乙氧基矽烷(3-aminopropyltriethoxysilane)
- 0.25-1%五甲基哌啶基癸二酸酯(pentamethyl piperidyl sebacate)之反應混合物，EG編號(EG number)：915-687-0，註冊號(reg. no.)：01-2119491304-40
Durazane 1500 Rapid Cure：
- 至少50%有機聚矽氮烷，CAS 475645-84-2
- 3-5%胺基丙基三乙氧基矽烷
(Aminopropyltriethoxysilane)
待塗布之膜，諸如PET、PC或PA膜為商品，且係以獲得之狀態用於下列實例。
實施例 1( 實驗室規模 ( laboratory scale ))
以5 m/min之速度將具有75 µm厚度之商用PET膜(Hostaphan，Mitsubishi)連續拉過填充有PROTect Easy Clean於乙酸乙酯中之5.7%混合物的浸漬槽。隨後乾燥係以100℃進行過5 m之長度。
所得膜之表面張力為24 mN/m、粗糙度Ra為0.6 µm以及Rz 4.6 µm。
此膜除了無皺紋地(without wrinkle)覆蓋模穴之表面，且使用Sumitomo G730(粒狀樹脂)於150℃以15巴(bar)之壓力模製5分鐘(min)亦顯示優異的脫離性質(release property)(脫離值(release value)低於可測量範圍，於封裝之後膜係自脫離(self-release))且形成良好的可印刷裝置表面(printable device surface)。
實施例 2( 實驗室規模 )
以1.5 m/min之速度將具有75 µm厚度之商用PET膜(Hostaphan，Mitsubishi)連續拉過填充有Durazane rapid cure 1500於乙酸乙酯中之5.0%混合物的浸漬槽。隨後乾燥係以100℃進行過3 m之長度。
所得膜之表面張力為28 mN/m、粗糙度Ra為0.5 µm以及Rz 4.5 µm。
此膜除了無皺紋地覆蓋模穴之表面，且使用Sumitomo G730 (粒狀樹脂)於150℃以15巴之壓力模製5分鐘亦顯示優異的脫離性質(脫離值0,3N/50mm)且形成良好的可印刷裝置表面。
實施例 3( 實驗室規模 )
對具有100 µm厚度之商用PC膜(Lexan，Sabic)手動塗布所應用之於乙醇-甲基乙基酮混合物(Ethanol-Methylethylketone-mixture)(比率1:18)中含有5.0% PROTect Easy Clean的mipa之5.0%混合物。隨後乾燥係以100℃進行45 sec。
此膜除了無皺紋地覆蓋模穴之表面，且使用Sumitomo G730(粒狀樹脂)於150℃以15巴之壓力模製5分鐘亦顯示優異的脫離性質(脫離值低於可測量範圍，於封裝之後膜係自脫離)且形成良好的可印刷裝置表面。
實施例 4( 實驗室規模 )
以1.5 m/min之速度將具有75 µm厚度之PA膜(PA6.6)(CTFGCO)連續拉過填充有PROTect Easy Clean於乙酸乙酯中之5.7%混合物的浸漬槽。隨後乾燥係以100℃進行過3 m之長度。
所得膜之表面張力為28 mN/m、粗糙度Ra為0.5 µm以及Rz 4.5 µm。
此膜除了無皺紋地覆蓋模穴之表面，且使用Sumitomo G730(粒狀樹脂)於150℃以15巴之壓力模製5分鐘亦顯示優異的脫離性質(脫離值低於可測量範圍，於封裝之後膜係自脫離)且形成良好的可印刷裝置表面。
雖然本說明書中已描述本發明之較佳實施態樣，但本發明不受限於此等實施態樣以及亦可以在如後之申請專利範圍之範疇內的其他方式進行。
Claims (16)
- 一種用於封裝半導體晶粒之脫模膜，其特徵在於 ‧ 該膜於至少一側具有聚矽氮烷(polysilazane)塗層，以及 ‧ 該膜於經聚矽氮烷塗布之側(polysilazane-coated side)的脫離性質(脫離(release))係使得該膜在可固化環氧樹脂於半導體晶粒之封裝程序中且於選擇用於固化之溫度(固化溫度)，特別是在120至180℃之範圍的固化溫度，固化之後自脫離(self-release)；以及 ‧ 較佳為該聚矽氮烷塗層係直接施加於待塗布之膜上。
- 如請求項1之脫模膜，其中 ‧ 脫離(release)係藉由使用Sumitomo G730於150℃以15巴(bar)之壓力進行封裝程序5分鐘來測定；及/或 ‧ 根據DIN EN 2243-1:2007-04於選擇用於固化之溫度(固化溫度)，特別是在120至180℃之範圍的固化溫度，所測定的脫離較佳，即，小於0.02 N/50 mm。
- 如請求項1或2之脫模膜，其中 ‧ 其平均算術粗糙度(average arithmetic roughness) Ra為0.2至3.5 µm，以及 ‧ 其平均粗糙度深度(average roughness depth)Rz為0.5-18 µm。
- 如前述請求項中任一項之脫模膜，其中，待塗布聚矽氮烷或經聚矽氮烷塗布之該膜 ‧ 係選自由聚酯膜、聚醯胺膜及聚碳酸酯膜所組成之群組；以及 ‧ 係視需要地藉由電漿處理或電暈處理進行表面處理。
- 如前述請求項中任一項之脫模膜，其中，待塗布聚矽氮烷或經聚矽氮烷塗布之該膜係選自由聚對酞酸乙二酯(PET)、聚醯胺(PA)及聚碳酸酯(PC)所組成之群組。
- 如請求項4或5之脫模膜，其中，待塗布聚矽氮烷或經聚矽氮烷塗布之該膜為 ‧ 雙軸定向(biaxially oriented)PET膜(BoPET膜)，或 ‧ PA6膜，或 ‧ PA66膜，或 ‧ 雙酚-A-聚碳酸酯膜。
- 如前述請求項中任一項之脫模膜，其中，待塗布聚矽氮烷或經聚矽氮烷塗布之該膜具有膜厚度在23至100 µm之範圍。
- 如前述請求項中之一項之脫模膜，其中 ‧ 該聚矽氮烷係選自由環狀、直鏈及支鏈有機聚矽氮烷及其混合物所組成之群組；以及 ‧ 除了氫，該聚矽氮烷僅包含C1至C4烷基。
- 如前述請求項中之一項之脫模膜，其中，該聚矽氮烷為包含二甲基矽氮烷(dimethylsilazane)及一甲基矽氮烷(monomethylsilazane)單體之共聚物，較佳為由二甲基矽氮烷及一甲基矽氮烷單體所組成之共聚物。
- 如前述請求項中之一項之脫模膜，其中，其於至少一經聚矽氮烷塗布之表面(polysilazane-coated surface)具有表面張力為22.5-30 mN/m。
- 一種製造如前述請求項中之一項之脫模膜之方法，其特徵在於 提供待塗布之膜(步驟a-i)，提供於溶劑中之聚矽氮烷及視需要的添加劑之混合物(步驟a-ii)，以及施加至該膜之至少一表面(步驟a-iii)從而獲得在膜上之塗層， 然後乾燥該塗層(步驟b)從而獲得該脫模膜。
- 如請求項11之方法，其中 (方法1)使待塗布之膜連續通過填充聚矽氮烷及視需要的助劑於溶劑中之混合物的浸漬槽，或者 (方法2)藉由網紋輥(anilox roll)或藉由Mayer棒(Mayer Bar)或藉由縫模(slot die)施加聚矽氮烷及視需要的助劑於溶劑中之混合物，於各情況中接著 乾燥該聚矽氮烷層，較佳係於90至130℃之溫度。
- 一種製造半導體封裝之方法，其包含下列步驟： 提供具有如請求項1至10中任一項之脫模膜的模穴； 提供一或多個黏於基板之半導體晶粒； 將黏於基板之該半導體晶粒置於該模穴內； 以可固化樹脂(curable resin)封裝(encapsulating)黏於基板之該半導體晶粒， 使如此獲得之半導體封裝從該模穴脫離； 視需要地分離或進一步加工(processing)該半導體封裝。
- 一種如請求項1至10中任一項之脫模膜之用途，係用於在封裝程序(encapsulation process)中藉由可固化樹脂封裝半導體晶粒之方法。
- 如請求項12之用途，其中，該可固化樹脂係選自環氧樹脂之群組。
- 如請求項12或13之用途，其中，該封裝程序為模製程序(molding process)或鑄製程序(casting process)。
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| US7173322B2 (en) | 2002-03-13 | 2007-02-06 | Mitsui Mining & Smelting Co., Ltd. | COF flexible printed wiring board and method of producing the wiring board |
| TW200621918A (en) * | 2004-11-23 | 2006-07-01 | Clariant Int Ltd | Polysilazane-based coating and the use thereof for coating films, especially polymer films |
| WO2012157073A1 (ja) | 2011-05-17 | 2012-11-22 | 伊藤光学工業株式会社 | 表面処理金型及び金型の表面処理方法 |
| JP2013230618A (ja) * | 2012-04-27 | 2013-11-14 | Dow Corning Toray Co Ltd | 離型フィルム、圧縮成型方法、および圧縮成型装置 |
| WO2015068808A1 (ja) | 2013-11-07 | 2015-05-14 | 旭硝子株式会社 | 離型フィルム、および半導体パッケージの製造方法 |
| US20200044189A1 (en) | 2016-11-10 | 2020-02-06 | Lintec Corporation | Gas-barrier laminated sheet, process for producing gas-barrier laminated sheet, and electronic member or optical member |
| US10861761B2 (en) * | 2017-09-29 | 2020-12-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor packaged wafer and method for forming the same |
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