TW202240604A - Thin temperature sensor - Google Patents

Thin temperature sensor Download PDF

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TW202240604A
TW202240604A TW110146856A TW110146856A TW202240604A TW 202240604 A TW202240604 A TW 202240604A TW 110146856 A TW110146856 A TW 110146856A TW 110146856 A TW110146856 A TW 110146856A TW 202240604 A TW202240604 A TW 202240604A
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temperature sensor
thin
thin temperature
insulating substrate
electrode layer
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TW110146856A
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戸田光昭
長谷川琢哉
田代亮平
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日商名幸電子股份有限公司
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/08Protective devices, e.g. casings
    • G01K1/12Protective devices, e.g. casings for preventing damage due to heat overloading
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C1/00Details
    • H01C1/02Housing; Enclosing; Embedding; Filling the housing or enclosure
    • H01C1/028Housing; Enclosing; Embedding; Filling the housing or enclosure the resistive element being embedded in insulation with outer enclosing sheath
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C1/00Details
    • H01C1/02Housing; Enclosing; Embedding; Filling the housing or enclosure
    • H01C1/034Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being formed as coating or mould without outer sheath
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C1/00Details
    • H01C1/14Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/142Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient

Abstract

This thin temperature sensor (1) comprises: an insulating substrate (2); an electrode layer (3) formed form a thin platinum film formed on the surface of the insulating substrate (2), the electrode layer (3) including a pattern region (3a) and a pair of substantially rectangular pad regions (3b) extending from the pattern region (3a); a pair of electrode terminals (4) formed by metal plating on portions of the pad regions (3b); and a glass protective film (5) that covers the pattern region (3a) as well as corner sections (3c) of the pad regions (3b).

Description

薄型溫度感測器Thin Temperature Sensor

本發明係關於一種薄型溫度感測器。The present invention relates to a thin temperature sensor.

作為利用電阻值根據溫度變化的金屬或是金屬氧化物之溫度感測器,已知熱敏電阻及鉑測溫電阻體,尤其是廣泛應用於工業用的溫度測量。此種溫度感測器係能藉由於絕緣基板上形成作為測溫電阻體的金屬薄膜並且設置與該金屬薄膜導通的一對電極端子之結構來達到薄型化。例如,專利文獻1及專利文獻2揭示了一種基於熱敏電阻或鉑測溫電阻體的薄型溫度感測器。Thermistors and platinum resistance temperature detectors are known as temperature sensors using metals or metal oxides whose resistance value changes according to temperature, and are widely used in industrial temperature measurement. Such a temperature sensor can be thinned by forming a metal thin film as a temperature measuring resistor on an insulating substrate and providing a pair of electrode terminals conducting with the metal thin film. For example, Patent Document 1 and Patent Document 2 disclose a thin temperature sensor based on a thermistor or a platinum resistance temperature detector.

更具體地說,專利文獻1係揭示了一種熱敏電阻及鉑測溫電阻體,係於由陶瓷所構成之絕緣基板上形成了由鉑所構成之電阻膜。此種薄型溫度感測器係廣泛使用具有俯視觀察基板面時於包夾形成有圖案(pattern)的電阻膜之兩側配置一對電極端子之構成。於該構成中係以電阻膜的中央部分為圖案區域且以該圖案區域的兩側為墊(pad)區域,藉此能較容易且低價地於墊區域的表面形成電極端子。另外,於鉑測溫電阻體中,電阻膜的圖案區域係形成為以鋸齒狀(zigzag)連接一對電極端子。此外,於熱敏電阻中,於絕緣基板上設置有由錳等金屬氧化物所構成之薄膜狀的感熱元件,於該感熱元件上係形成有從各個電極端子延伸之一對形成為相對的梳狀的電阻膜的圖案區域。More specifically, Patent Document 1 discloses a thermistor and a platinum temperature measuring resistor in which a resistive film made of platinum is formed on an insulating substrate made of ceramics. Such a thin temperature sensor is widely used in a configuration in which a pair of electrode terminals are arranged on both sides of a resistive film on which a pattern is formed in a planar view of the substrate. In this configuration, the central part of the resistive film is used as a pattern area and both sides of the pattern area are used as pad areas, whereby electrode terminals can be formed on the surface of the pad area relatively easily and at low cost. In addition, in the platinum resistance temperature measuring element, the pattern region of the resistance film is formed so as to connect a pair of electrode terminals in a zigzag shape. In addition, in a thermistor, a thin-film heat-sensitive element made of metal oxide such as manganese is provided on an insulating substrate, and a pair of opposing combs extending from each electrode terminal are formed on the heat-sensitive element. patterned area of the resistive film.

另外,當如上所述的薄膜溫度感測器使用於測量200℃上的溫度時,電極端子係使用由熔點相對較高的金、銅或是鎳等所構成之金屬鍍覆。於此,當藉由焊接而將佈線連接至金屬鍍覆的電極端子時,焊料中所含的錫成分係因熱而擴散至金屬鍍覆,於兩者的邊界處形成金屬間化合物。由於該金屬間化合物具有高硬度卻也具有脆性,因此當金屬鍍覆的厚度為小於約1μm時,除了容易產生裂紋,還會因為純金屬成分的比例降低而導致電阻值變化。因此,為了抑制損壞風險及電阻變化,電極端子必須確保一定程度的厚度。In addition, when the thin film temperature sensor as described above is used to measure a temperature above 200° C., the electrode terminals are plated with a metal composed of gold, copper, or nickel having a relatively high melting point. Here, when the wiring is connected to the metal-plated electrode terminal by soldering, the tin component contained in the solder diffuses to the metal plating due to heat, forming an intermetallic compound at the boundary of both. Since the intermetallic compound has high hardness but is also brittle, when the thickness of the metal plating is less than about 1 μm, not only cracks are likely to occur, but also the resistance value changes due to the reduction of the ratio of pure metal components. Therefore, in order to suppress the risk of damage and the change in resistance, it is necessary to secure a certain thickness for the electrode terminal.

此外,當薄型溫度感測器內置於電路基板時,由於並未進行基於焊接之佈線連接,因此不會產生金屬間化合物,但是由於進行基於雷射貫孔(laser via)的佈線連接,必須形成能夠承受雷射強度的電極端子,因此必須將金屬鍍覆的厚度設定為約8μm以上。In addition, when the thin temperature sensor is built into the circuit board, no intermetallic compound will be generated because the wiring connection by soldering is not performed, but since the wiring connection by laser via (laser via) must be formed For electrode terminals that can withstand the intensity of laser light, it is necessary to set the thickness of the metal plating to about 8 μm or more.

[先前技術文獻] [專利文獻] [專利文獻1]國際申請2018/066473號公開公報。 [專利文獻2]日本特開2010-197163號公報。 [Prior Art Literature] [Patent Document] [Patent Document 1] International Application Publication No. 2018/066473. [Patent Document 2] Japanese Unexamined Patent Publication No. 2010-197163.

[發明所欲解決之課題][Problem to be Solved by the Invention]

然而,金屬鍍覆係膜厚越大就越容易因內部應力而產生翹曲,當如上所述般地形成於設在絕緣基板上的電阻膜上時,可能導致使電阻膜從絕緣基板剝離。However, the thicker the metal plating film, the easier it is to warp due to internal stress, and when it is formed on the resistive film provided on the insulating substrate as described above, the resistive film may be peeled off from the insulating substrate.

本發明係鑑於如此課題而完成,本發明的目的在於提供一種薄型溫度感測器,即使是當形成於電阻膜上的電極端子的鍍覆厚度較厚時,仍能防止電阻膜的剝離。 [用以解決課題之手段] The present invention was made in view of such problems, and an object of the present invention is to provide a thin temperature sensor capable of preventing peeling of the resistive film even when the plating thickness of the electrode terminals formed on the resistive film is thick. [Means to solve the problem]

為了達成上述目的,本發明的薄型溫度感測器係具備:絕緣基板;電極層,係由形成於前述絕緣基板的表面上之鉑薄膜所構成,包括圖案區域及由前述圖案區域延伸之大致矩形的一對墊區域;一對電極端子,係藉由金屬鍍覆形成於前述墊區域的範圍內的表面;及玻璃保護膜,係覆蓋前述圖案區域及前述墊區域的角落,且不與前述電極端子重疊。 [發明功效] In order to achieve the above object, the thin temperature sensor of the present invention has: an insulating substrate; an electrode layer, which is formed of a platinum thin film formed on the surface of the insulating substrate, and includes a pattern area and a substantially rectangular shape extending from the pattern area. A pair of pad regions; a pair of electrode terminals formed on the surface within the range of the aforementioned pad region by metal plating; and a glass protective film covering the aforementioned pattern region and the corners of the aforementioned pad region and not contacting the aforementioned electrodes The terminals overlap. [Efficacy of the invention]

本發明的薄型溫度感測器中,即使是當形成於電阻膜上的電極端子的鍍覆厚度較厚時,仍能防止電阻膜的剝離。In the thin temperature sensor of the present invention, even when the plating thickness of the electrode terminals formed on the resistive film is thick, peeling of the resistive film can be prevented.

以下參照圖式詳細說明發明的實施形態。另外,本發明並不限於以下所說明內容,於不改變本發明主旨範圍內能夠任意變更而實施。此外,用於說明實施形態的圖式係皆為示意性地顯示構成構件,且可能為了加深理解而做了局部性強調、擴大、縮小或是省略等,並可能未正確地顯示構成構件的縮小比例及形狀等。Embodiments of the invention will be described in detail below with reference to the drawings. In addition, this invention is not limited to the content demonstrated below, It can change arbitrarily within the range which does not change the gist of this invention, and can implement. In addition, the drawings used to explain the embodiments are all schematically showing constituent members, and may be partially emphasized, expanded, reduced, or omitted for better understanding, and may not accurately show the reduction of constituent members. proportion and shape etc.

[第一實施形態] 圖1係示意性顯示第一實施形態的薄型溫度感測器1的外形之立體圖。薄型溫度感測器1係配置於測溫對象的附近之鉑測溫電阻體,於本實施形態中係由絕緣基板2、電極層3、一對電極端子4及玻璃保護膜5所構成。於此,薄型溫度感測器1並不限為鉑測溫電阻體,亦可為熱敏電阻。 [First Embodiment] FIG. 1 is a perspective view schematically showing the appearance of a thin temperature sensor 1 according to a first embodiment. The thin temperature sensor 1 is a platinum temperature measuring resistor disposed near a temperature measuring object, and is composed of an insulating substrate 2, an electrode layer 3, a pair of electrode terminals 4, and a glass protective film 5 in this embodiment. Here, the thin temperature sensor 1 is not limited to a platinum resistance temperature detector, and may also be a thermistor.

絕緣基板2係具有剛性之長方形平板,且由陶瓷等絕緣材料所形成。此外,絕緣基板2例如能設定為0.3mm至0.6mm的厚度。惟,絕緣基板2的形狀並不限於長方形,能夠根據薄型溫度感測器1的規格而適當變更。The insulating substrate 2 is a rigid rectangular flat plate made of insulating materials such as ceramics. In addition, the insulating substrate 2 can be set to a thickness of, for example, 0.3 mm to 0.6 mm. However, the shape of the insulating substrate 2 is not limited to a rectangle, and can be appropriately changed according to the specifications of the thin temperature sensor 1 .

電極層3係如後詳述般,由於絕緣基板2的表面上形成有圖案的鉑薄膜所構成,且電阻值根據溫度而變化之測溫電阻元件。電極層3例如設定為0.1μm至3.0μm的厚度,在各個圖中顯示為放大至能夠識辨之厚度。於此,作為測溫電阻元件,能採用例如於0℃下具有100Ω電阻值的鉑電阻,亦即採用所謂的Pt100。此外,於本實施形態中,將電極層3示例為於俯視觀察下端部係具有與絕緣基板2的輪廓一致的形狀,惟亦可設定為具有使得端部係位於比絕緣基板2的輪廓還內側之尺寸。The electrode layer 3 is a temperature-measuring resistance element that is composed of a platinum thin film patterned on the surface of the insulating substrate 2 as will be described in detail later, and whose resistance value changes according to temperature. The electrode layer 3 is set to have a thickness of, for example, 0.1 μm to 3.0 μm, and is shown enlarged to a recognizable thickness in each figure. Here, a platinum resistor having a resistance value of 100Ω at 0° C., that is, a so-called Pt100 can be used as the temperature measuring resistance element, for example. In addition, in this embodiment, the electrode layer 3 is exemplified so that the lower end portion of the electrode layer 3 has a shape consistent with the contour of the insulating substrate 2 in a plan view, but it can also be set so that the end portion is located inside the contour of the insulating substrate 2. size.

一對電極端子4係由形成於電極層3的表面的一部分之金屬鍍覆所構成,測量當有一定的電流供給至兩者之間時的電阻值。因此,一對電極端子4係具有作為佈線連接用端子之功能,例如藉由焊接或熔焊連接導線、或是當薄型溫度感測器1內置於基板時藉由雷射貫孔連接。於此,電極端子4中,金屬鍍覆係根據薄型溫度感測器1的規格而形成為足夠的厚度。另外,電極端子4的金屬鍍覆係例如由金、銅、鎳或是鈀所形成,以便能夠測量至高溫範圍。The pair of electrode terminals 4 is formed by metal plating formed on a part of the surface of the electrode layer 3, and the resistance value when a certain current is supplied between them is measured. Therefore, the pair of electrode terminals 4 functions as terminals for wiring connection, such as connecting wires by welding or welding, or connecting by laser through holes when the thin temperature sensor 1 is embedded in the substrate. Here, in the electrode terminal 4 , the metal plating is formed to have a sufficient thickness according to the specification of the thin temperature sensor 1 . In addition, the metal plating of the electrode terminal 4 is formed of, for example, gold, copper, nickel, or palladium in order to enable measurement up to a high temperature range.

玻璃保護膜5係由具有絕緣性的玻璃材料所構成之塗覆層,於本實施形態中係覆蓋電極層3的表面中存在有電極端子4之部分以外的所有部分,並對電極層3進行電性、物理保護。The protective glass film 5 is a coating layer made of an insulating glass material. In this embodiment, it covers all parts of the surface of the electrode layer 3 except for the part where the electrode terminal 4 exists, and the electrode layer 3 is covered. Electrical and physical protection.

圖2係顯示第一實施形態的電極層3的形狀之俯視圖。本實施形態的電極層3係於一片長方形鉑薄膜中,於兩端設置大致矩形的一對墊區域3b,並設置以鋸齒狀延伸而連接一對墊區域3b之圖案區域3a。FIG. 2 is a plan view showing the shape of the electrode layer 3 of the first embodiment. The electrode layer 3 of this embodiment is formed in a rectangular platinum thin film, with a pair of substantially rectangular pad regions 3b at both ends, and a pattern region 3a extending in a zigzag shape to connect the pair of pad regions 3b.

另外,圖案區域3a及墊區域3b的形狀在具有測溫電阻元件功能的範圍內能夠適當變更。例如,於本實施形態中將墊區域3b的形狀設定為大致矩形,但亦可為四角的角落3c為R面(圓弧面)狀。此外,當薄型溫度感測器1為熱敏電阻時,圖案區域3a係形成為從一對墊區域3b延伸之一對相對的梳狀,於圖案區域3a與絕緣基板2之間設有感熱元件。In addition, the shape of the pattern area 3a and the pad area 3b can be changed suitably within the range which functions as a temperature measuring resistance element. For example, in the present embodiment, the shape of the pad region 3b is set to be substantially rectangular, but the corners 3c of the four corners may be in the shape of an R surface (arc surface). In addition, when the thin temperature sensor 1 is a thermistor, the pattern area 3a is formed as a pair of opposing combs extending from a pair of pad areas 3b, and a thermal element is arranged between the pattern area 3a and the insulating substrate 2 .

圖3係形成電極端子4前的薄膜溫度感測器1之俯視圖。薄型溫度感測器1中,上述電極層3係藉由濺鍍處理而形成於絕緣基板2的表面,且進一步於電極層3的上方形成玻璃保護膜5。於圖3中,以透視方式顯示設置於玻璃保護膜5正下方的電極層3。於此,玻璃保護膜5係設置有一對開口部5a,該一對開口部5a係以避開之後所形成的一對電極端子4的位置之方式設置於各個墊區域3b。亦即,於圖3的狀態下,電極層3的墊區域3b的一部分係從開口部5a露出。此外,開口部5a係以不與墊區域3b的四角的角落3c重疊之方式設置於墊區域3b的中央部分,藉此使得墊區域3b的端部的全周被玻璃保護膜5覆蓋。FIG. 3 is a top view of the thin film temperature sensor 1 before electrode terminals 4 are formed. In the thin temperature sensor 1 , the electrode layer 3 is formed on the surface of the insulating substrate 2 by sputtering, and a protective glass film 5 is further formed on the electrode layer 3 . In FIG. 3 , the electrode layer 3 provided directly under the glass protective film 5 is shown in perspective. Here, the protective glass film 5 is provided with a pair of openings 5a provided in the respective pad regions 3b so as to avoid the positions of the pair of electrode terminals 4 to be formed later. That is, in the state of FIG. 3 , a part of the pad region 3b of the electrode layer 3 is exposed from the opening 5a. In addition, the opening 5a is provided in the central portion of the pad region 3b so as not to overlap the four corners 3c of the pad region 3b, whereby the entire periphery of the end of the pad region 3b is covered with the glass protective film 5.

接著,於墊區域3b中的開口部5a中,藉由於露出的電極層3的上表面用金屬鍍覆形成電極端子4,完成如圖1所示的薄型溫度感測器1。Next, in the opening portion 5a in the pad region 3b, the electrode terminal 4 is formed by metal plating the exposed upper surface of the electrode layer 3, and the thin temperature sensor 1 as shown in FIG. 1 is completed.

接著,以習知技術作為比較例說明本發明的作用及功效。圖4係第一比較例的薄型溫度感測器E1之側面圖。於第一比較例中,薄型溫度感測器E1的電極端子4係以與電極層3的角落3c重疊之方式形成於墊區域3b的整個面。Next, the functions and effects of the present invention will be described by taking the conventional technology as a comparative example. FIG. 4 is a side view of the thin temperature sensor E1 of the first comparative example. In the first comparative example, the electrode terminal 4 of the thin temperature sensor E1 is formed on the entire surface of the pad region 3b so as to overlap the corner 3c of the electrode layer 3 .

第一比較例的電極端子4中,因電極端子4的厚度所致的內部應力而產生翹曲,尤其是於電極層3的角落3c中,可能如P1所示般與電極層3一起從絕緣基板2翹起。而且隨著翹起的進行,會使得電極層3的墊區域3b與電極端子4一起從絕緣基板2完全剝離。In the electrode terminal 4 of the first comparative example, warping occurs due to the internal stress caused by the thickness of the electrode terminal 4, especially in the corner 3c of the electrode layer 3, which may be isolated from the insulation together with the electrode layer 3 as shown in P1. The substrate 2 is lifted. Furthermore, as the warping progresses, the pad region 3 b of the electrode layer 3 will be completely peeled off from the insulating substrate 2 together with the electrode terminal 4 .

此外,圖5係第二比較例的薄型溫度感測器E2之側視圖。第二比較例之薄型溫度感測器E2中,電極層3的墊區域3b狹窄,電極端子4係以跨越絕緣基板2與墊區域3b間的邊界之方式形成。亦即,電極端子4係配置為覆蓋電極層3的角落3c。In addition, FIG. 5 is a side view of the thin temperature sensor E2 of the second comparative example. In the thin temperature sensor E2 of the second comparative example, the pad region 3b of the electrode layer 3 is narrow, and the electrode terminal 4 is formed so as to straddle the boundary between the insulating substrate 2 and the pad region 3b. That is, the electrode terminal 4 is arranged to cover the corner 3 c of the electrode layer 3 .

薄型溫度感測器E2的電極端子4中,可能因電極端子4的厚度所致的內部應力尤其是以電極層3的角落3c附近為中心產生翹曲,並可能如P2所示般將電極層3的角落3c從絕緣基板2剝落。In the electrode terminal 4 of the thin temperature sensor E2, the internal stress caused by the thickness of the electrode terminal 4 may cause warping around the corner 3c of the electrode layer 3, and the electrode layer may be warped as shown in P2. The corner 3c of 3 is peeled off from the insulating substrate 2.

相對於此,本發明的薄型溫度感測器1係藉由如上所述之玻璃保護膜5的構成來防止電極層3的剝離。圖6係本發明的第一實施形態的薄型溫度感測器1之側視圖。本發明的電極層3係如上所述般,包括角落3c在內的墊區域3b的端部的全周被玻璃保護膜5所覆蓋且於正上方不存在電極端子4,藉由玻璃保護膜5將墊區域3b的輪廓部分固定於絕緣基板2。因此,電極層3的墊區域3b中,即使於電極端子4產生內部應力,仍可防止角落3c與電極端子4一起從絕緣基板2剝離。因此,根據本發明的第一實施形態的薄型溫度感測器1,即使是當形成於作為電極層3之電阻膜上的電極端子4的鍍覆厚度較厚時,仍能抑制電阻膜的剝離。In contrast, the thin temperature sensor 1 of the present invention prevents peeling of the electrode layer 3 by the constitution of the glass protective film 5 as described above. Fig. 6 is a side view of the thin temperature sensor 1 according to the first embodiment of the present invention. In the electrode layer 3 of the present invention, as described above, the entire circumference of the end of the pad region 3b including the corner 3c is covered by the glass protective film 5 and there is no electrode terminal 4 directly above it. The contour portion of the pad region 3 b is fixed to the insulating substrate 2 . Therefore, even if internal stress is generated in the electrode terminal 4 in the pad region 3 b of the electrode layer 3 , the corner 3 c can be prevented from peeling off from the insulating substrate 2 together with the electrode terminal 4 . Therefore, according to the thin temperature sensor 1 of the first embodiment of the present invention, even when the plating thickness of the electrode terminal 4 formed on the resistance film as the electrode layer 3 is thick, peeling of the resistance film can be suppressed. .

[第二實施形態] 接著說明第二實施形態的薄型溫度感測器10。第二實施形態的薄型溫度感測器10中,上述第一實施形態的薄型溫度感測器1中的電極端子4及玻璃保護膜5的形狀係與第一實施形態不同。以下針對與第一實施形態不同的部分進行說明,關於與第一實施形態共同的構成要件標示相同的符號並省略詳細說明。 [Second Embodiment] Next, the thin temperature sensor 10 of the second embodiment will be described. In the thin temperature sensor 10 of the second embodiment, the shapes of the electrode terminals 4 and the protective glass film 5 in the thin temperature sensor 1 of the first embodiment are different from those of the first embodiment. The parts different from those of the first embodiment will be described below, and the same reference numerals will be assigned to the same components as those of the first embodiment, and detailed description will be omitted.

圖7係第二實施形態的薄型溫度感測器10之俯視圖。薄型溫度感測器10與上述薄型溫度感測器1同樣地,電極層3係形成於絕緣基板2的表面。而且,相較於上述薄型溫度感測器1,本實施形態中的一對電極端子4a係設定為具有長度方向的端部延伸至絕緣基板2及電極層3的端部之尺寸。因此,玻璃保護膜5係由配置於一對電極端子4a之間之第一部分5b及配置於各個電極端子4a的外側之一對第二部分5c所構成。FIG. 7 is a plan view of a thin temperature sensor 10 according to the second embodiment. In the thin temperature sensor 10 , the electrode layer 3 is formed on the surface of the insulating substrate 2 similarly to the thin temperature sensor 1 described above. Furthermore, compared to the thin temperature sensor 1 described above, the pair of electrode terminals 4a in this embodiment is set to have a dimension in which the ends in the longitudinal direction extend to the ends of the insulating substrate 2 and the electrode layer 3 . Therefore, the protective glass film 5 is composed of a first portion 5b arranged between a pair of electrode terminals 4a and a pair of second portions 5c arranged outside each electrode terminal 4a.

此時,玻璃保護膜5係覆蓋墊區域3b的端部中包含角落3c在內之彼此相對的兩側,使得角落3c的正上方不存在電極端子4a,並將墊區域3b的該兩側固定於絕緣基板2。因此,根據本發明的第二實施形態的薄型溫度感測器10,與上述薄型溫度感測器1同樣地,即使當形成於作為電極層3之電阻膜上的電極端子4a的鍍覆厚度較厚時,仍能防止電阻膜的剝離。At this time, the protective glass film 5 covers the opposite sides of the end of the pad region 3b including the corner 3c so that the electrode terminal 4a does not exist directly above the corner 3c, and fixes the two sides of the pad region 3b. on the insulating substrate 2. Therefore, according to the thin temperature sensor 10 according to the second embodiment of the present invention, like the above-mentioned thin temperature sensor 1, even when the plating thickness of the electrode terminal 4a formed on the resistance film as the electrode layer 3 is relatively small When it is thick, it can still prevent the peeling of the resistive film.

此外,根據第二實施形態的薄型溫度感測器10,由於玻璃保護膜5的第一部分5b及第二部分5c為簡單的形狀,因此易於進行品質管理,另外由於能抑制製造成本,因而能實現降低產品成本。In addition, according to the thin temperature sensor 10 of the second embodiment, since the first part 5b and the second part 5c of the glass protective film 5 have a simple shape, quality control is easy, and since the manufacturing cost can be suppressed, it is possible to realize Reduce product cost.

[第三實施形態] 接著說明第三實施形態的薄型溫度感測器11。第三實施形態的薄型溫度感測器11中,上述第一實施形態的薄型溫度感測器1中的電極端子4及玻璃保護膜5的形狀係與第一實施形態不同。以下針對與第一實施形態不同的部分進行說明,關於與第一實施形態共同的構成要件標示相同的符號並省略詳細說明。 [Third Embodiment] Next, the thin temperature sensor 11 of the third embodiment will be described. In the thin temperature sensor 11 of the third embodiment, the shapes of the electrode terminals 4 and the protective glass film 5 in the thin temperature sensor 1 of the first embodiment are different from those of the first embodiment. The parts different from those of the first embodiment will be described below, and the same reference numerals will be assigned to the same components as those of the first embodiment, and detailed description will be omitted.

圖8係第三實施形態的薄型溫度感測器11之俯視圖。薄型溫度感測器11係與上述薄型溫度感測器1同樣地,電極層3係形成於絕緣基板2的表面。而且,相較於上述薄型溫度感測器1,本實施形態中的一對電極端子4b係設定為具有橫向的端部延伸至墊區域3b的端部之尺寸。因此,玻璃保護膜5d係形成為連續的大致H字形。Fig. 8 is a plan view of a thin temperature sensor 11 according to a third embodiment. The thin temperature sensor 11 is similar to the thin temperature sensor 1 described above, and the electrode layer 3 is formed on the surface of the insulating substrate 2 . Furthermore, compared with the thin temperature sensor 1 described above, the pair of electrode terminals 4b in this embodiment is set to have a dimension in which the ends in the lateral direction extend to the ends of the pad region 3b. Therefore, the protective glass film 5d is formed in a continuous substantially H-shape.

此時,玻璃保護膜5d覆蓋墊區域3b的端部中包含角落3c在內之彼此相對的兩側,使得角落3c的正上方不存在電極端子4a,並將墊區域3b的該兩側固定於絕緣基板2。因此,根據本發明的第三實施形態的薄型溫度感測器11,與上述薄型溫度感測器1同樣地,即使當形成於作為電極層3之電阻膜上的電極端子4a的鍍覆厚度較厚時,仍能抑制電阻膜的剝離。At this time, the protective glass film 5d covers both sides of the end portion of the pad region 3b facing each other including the corner 3c so that the electrode terminal 4a does not exist directly above the corner 3c, and fixes the both sides of the pad region 3b to the insulating substrate 2. Therefore, according to the thin temperature sensor 11 according to the third embodiment of the present invention, similar to the thin temperature sensor 1 described above, even when the plating thickness of the electrode terminal 4a formed on the resistance film as the electrode layer 3 is relatively small When it is thick, the peeling of the resistive film can still be suppressed.

此外,根據第三實施形態的薄型溫度感測器11,與上述薄型溫度感測器1相比,除了玻璃保護膜5d為簡單的形狀因此易於進行品質管理之外,由於能抑制製造成本,因而能實現降低產品成本。In addition, according to the thin temperature sensor 11 of the third embodiment, compared with the above-mentioned thin temperature sensor 1, in addition to the simple shape of the protective glass film 5d, quality control is easy, and the manufacturing cost can be suppressed. A reduction in product cost can be achieved.

[第四實施形態] 接著說明第四實施形態的薄型溫度感測器12。第四實施形態的薄型溫度感測器12中,上述第一實施形態的薄型溫度感測器1中的電極層3的形狀、電極端子4的配置及玻璃保護膜5的形狀係與第一實施形態不同。以下針對與第一實施形態不同的部分進行說明,關於與第一實施形態共同的構成要件標示相同的符號並省略詳細說明。 [Fourth Embodiment] Next, the thin temperature sensor 12 of the fourth embodiment will be described. In the thin temperature sensor 12 of the fourth embodiment, the shape of the electrode layer 3, the arrangement of the electrode terminals 4, and the shape of the glass protective film 5 in the thin temperature sensor 1 of the first embodiment described above are the same as those of the first embodiment. The shape is different. The parts different from those of the first embodiment will be described below, and the same reference numerals will be assigned to the same components as those of the first embodiment, and detailed description will be omitted.

圖9係第四實施形態的薄型溫度感測器12之俯視圖。薄型溫度感測器12的電極層3’具有一對墊區域3b配置為相鄰於絕緣基板2的長度方向的一側之形狀。而且,薄型溫度感測器12中,一對電極端子4c係配置於該一對墊區域3b的中央部分,其他的表面係被玻璃保護膜5e覆蓋。FIG. 9 is a plan view of a thin temperature sensor 12 according to a fourth embodiment. The electrode layer 3' of the thin temperature sensor 12 has a shape in which a pair of pad regions 3b are arranged adjacent to one side of the insulating substrate 2 in the longitudinal direction. In addition, in the thin temperature sensor 12, a pair of electrode terminals 4c are arranged in the central part of the pair of pad regions 3b, and the other surfaces are covered with a glass protective film 5e.

此時,玻璃保護膜5e係覆蓋包含角落3c在內之墊區域3b的端部的全周,使得於角落3c的正上方不存在電極端子4c,並將墊區域3b的該端部的全周固定於絕緣基板2。因此,根據本發明的第四實施形態的薄型溫度感測器12,雖然電極層3的形狀與上述薄型溫度感測器1不同,但與上述薄型溫度感測器1同樣地,即使當形成於作為電極層3’之電阻膜上之電極端子4c的鍍覆厚度較厚時,仍能抑制電阻膜的剝離。At this time, the protective glass film 5e covers the entire circumference of the end of the pad region 3b including the corner 3c so that the electrode terminal 4c does not exist directly above the corner 3c, and covers the entire circumference of the end of the pad region 3b. fixed to the insulating substrate 2 . Therefore, according to the thin temperature sensor 12 according to the fourth embodiment of the present invention, although the shape of the electrode layer 3 is different from the thin temperature sensor 1 described above, similar to the thin temperature sensor 1 described above, even when formed on When the plating thickness of the electrode terminals 4c on the resistive film as the electrode layer 3' is relatively thick, peeling of the resistive film can still be suppressed.

[本發明之實施態樣] 本發明的第一實施態樣的薄型溫度感測器係具備:絕緣基板;電極層,係由形成於前述絕緣基板的表面上之鉑薄膜所構成,包括圖案區域及從前述圖案區域延伸之大致矩形的一對墊區域;一對電極端子,係藉由金屬鍍覆形成於前述墊區域的範圍內的表面;及玻璃保護膜,係覆蓋前述圖案區域及前述墊區域的角落,且不與前述電極端子重疊。 [Example of the present invention] The thin temperature sensor according to the first embodiment of the present invention includes: an insulating substrate; A pair of rectangular pad regions; a pair of electrode terminals formed on the surface within the range of the aforementioned pad regions by metal plating; The electrode terminals overlap.

於第一實施態樣的薄型溫度感測器中,電極層中作為測溫電阻體之圖案區域及用於形成電極端子之墊區域係設置於絕緣基板上,藉由於墊區域的一部分施加金屬鍍覆而形成電極端子。此外,藉由用玻璃保護膜覆蓋圖案區域及墊區域的角落,來對電極層進行絕緣保護。此時墊區域的角落係於正上方不配置電極端子且被玻璃保護膜固定於絕緣基板,藉此防止與電極端子一起從絕緣基板剝離。因此,根據第一實施態樣的薄型溫度感測器,即使形成於電阻膜上之電極端子的鍍覆厚度較厚時,仍能抑制電阻膜的剝離。In the thin temperature sensor of the first embodiment, the pattern region as the temperature measuring resistor in the electrode layer and the pad region for forming the electrode terminal are provided on the insulating substrate, and metal plating is applied to a part of the pad region. cover to form electrode terminals. In addition, the electrode layer is insulated and protected by covering the corners of the pattern area and the pad area with a glass protective film. At this time, the corners of the pad region are not disposed directly above the electrode terminals and are fixed to the insulating substrate by the glass protective film, thereby preventing peeling from the insulating substrate together with the electrode terminals. Therefore, according to the thin temperature sensor of the first embodiment, even when the plating thickness of the electrode terminals formed on the resistive film is thick, peeling of the resistive film can be suppressed.

本發明的第二實施態樣的薄型溫度感測器為在上述第一實施態樣中,前述玻璃保護膜係覆蓋前述墊區域的端部中彼此相對之兩側。In the thin temperature sensor according to the second aspect of the present invention, in the above-mentioned first aspect, the glass protective film covers both sides of the ends of the pad region facing each other.

根據第二實施態樣的薄型溫度感測器,係與上述第一實施態樣同樣地,墊區域的角落係被玻璃保護膜固定於絕緣基板,藉此防止與電極端子一起從絕緣基板剝離。此外,根據第二實施態樣的薄型溫度感測器,由於玻璃保護膜為簡單的形狀,因此易於進行品質管理,另外由於能抑制製造成本,因此能實現降低產品成本。According to the thin temperature sensor of the second embodiment, similarly to the above-mentioned first embodiment, the corners of the pad region are fixed to the insulating substrate by the glass protective film, thereby preventing peeling from the insulating substrate together with the electrode terminals. In addition, according to the thin temperature sensor of the second embodiment, since the glass protective film has a simple shape, quality control is easy, and since manufacturing cost can be suppressed, product cost reduction can be realized.

本發明的第三實施態樣的薄型溫度感測器為於上述第一實施態樣或第二實施態樣中,前述玻璃保護膜係覆蓋前述墊區域的端部的全周。In the thin temperature sensor according to a third aspect of the present invention, in the above-mentioned first or second embodiment, the glass protective film covers the entire circumference of the end of the pad region.

於第三實施態樣的薄型溫度感測器中,由於不僅墊區域的角落,端部的全周都被玻璃保護膜固定於絕緣基板,因此能更有效地防止電極層從絕緣基板剝離。In the thin temperature sensor of the third embodiment, since not only the corners of the pad region but also the entire circumference of the end are fixed to the insulating substrate by the glass protective film, peeling of the electrode layer from the insulating substrate can be prevented more effectively.

1:薄型溫度感測器 2:絕緣基板 3,3':電極層 3a:圖案區域 3b:墊區域 3c:角落 4:電極端子 4a至4c:電極端子 5:玻璃保護膜 5a:開口部 5b:第一部分 5c:第二部分 5d,5e:玻璃保護膜 10至12:薄型溫度感測器 E1:薄型溫度感測器 E2:薄型溫度感測器 1: Thin temperature sensor 2: Insulation substrate 3,3': electrode layer 3a: Pattern area 3b: Pad area 3c: corner 4: Electrode terminal 4a to 4c: Electrode terminals 5: Glass protective film 5a: Opening 5b: Part 1 5c: Part II 5d, 5e: glass protective film 10 to 12: Thin temperature sensor E1: Thin temperature sensor E2: Thin temperature sensor

[圖1]係示意性顯示第一實施形態的薄型溫度感測器的外形之立體圖。 [圖2]係顯示第一實施形態的電極層的形狀之俯視圖。 [圖3]係形成電極端子前的薄膜溫度感測器之俯視圖。 [圖4]係第一比較例的薄型溫度感測器之側視圖。 [圖5]係第二比較例的薄型溫度感測器之側視圖。 [圖6]係第一實施形態的薄型溫度感測器之側視圖。 [圖7]係第二實施形態的薄型溫度感測器之俯視圖。 [圖8]係第三實施形態的薄型溫度感測器之俯視圖。 [圖9]係第四實施形態的薄型溫度感測器之俯視圖。 [ Fig. 1 ] is a perspective view schematically showing the appearance of a thin temperature sensor according to a first embodiment. [FIG. 2] It is a top view which shows the shape of the electrode layer of 1st Embodiment. [Fig. 3] It is a plan view of the thin film temperature sensor before electrode terminals are formed. [FIG. 4] It is a side view of the thin temperature sensor of the 1st comparative example. [ Fig. 5 ] is a side view of a thin temperature sensor of a second comparative example. [ Fig. 6 ] is a side view of the thin temperature sensor of the first embodiment. [ Fig. 7 ] is a plan view of a thin temperature sensor according to a second embodiment. [ Fig. 8 ] is a plan view of a thin temperature sensor according to a third embodiment. [ Fig. 9 ] is a plan view of a thin temperature sensor according to a fourth embodiment.

1:薄型溫度感測器 1: Thin temperature sensor

2:絕緣基板 2: Insulation substrate

3:電極層 3: Electrode layer

4:電極端子 4: Electrode terminal

5:玻璃保護膜 5: Glass protective film

Claims (3)

一種薄型溫度感測器,係具備: 絕緣基板; 電極層,係由形成於前述絕緣基板的表面上之鉑薄膜所構成,包括圖案區域及從前述圖案區域延伸之大致矩形的一對墊區域; 一對電極端子,係藉由金屬鍍覆形成於前述墊區域的範圍內的表面;及 玻璃保護膜,係覆蓋前述圖案區域及前述墊區域的角落,且不與前述電極端子重疊。 A thin temperature sensor with: insulating substrate; The electrode layer is composed of a platinum thin film formed on the surface of the aforementioned insulating substrate, including a pattern area and a pair of substantially rectangular pad areas extending from the aforementioned pattern area; a pair of electrode terminals formed on the surface within the range of the aforementioned pad region by metal plating; and The glass protective film covers the corners of the pattern area and the pad area, and does not overlap the electrode terminals. 如請求項1所記載之薄型溫度感測器,其中前述玻璃保護膜係覆蓋前述墊區域的端部中彼此相對之兩側。The thin temperature sensor as described in claim 1, wherein the glass protective film covers two opposite sides of the end of the pad region. 如請求項1或2所記載之薄型溫度感測器,其中前述玻璃保護膜係覆蓋前述墊區域的端部的全周。The thin temperature sensor according to claim 1 or 2, wherein the glass protective film covers the entire circumference of the end of the pad region.
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Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03131003A (en) * 1989-10-16 1991-06-04 Kobe Steel Ltd Diamond thin-film thermistor
JP3131003B2 (en) 1992-02-28 2001-01-31 川崎製鉄株式会社 Hot-dip galvanizing method for high strength steel sheet
JP3333267B2 (en) * 1993-04-14 2002-10-15 コーア株式会社 Platinum temperature sensor
JP2555536B2 (en) * 1993-09-24 1996-11-20 コーア株式会社 Method for manufacturing platinum temperature sensor
JP2007115938A (en) * 2005-10-21 2007-05-10 Ishizuka Electronics Corp Thin film thermistor
JP2011089859A (en) * 2009-10-21 2011-05-06 Yamatake Corp Temperature sensor
JP6134507B2 (en) * 2011-12-28 2017-05-24 ローム株式会社 Chip resistor and manufacturing method thereof
JP5736348B2 (en) * 2012-06-21 2015-06-17 立山科学工業株式会社 Thin film resistor temperature sensor and manufacturing method thereof
US8985513B2 (en) 2013-06-17 2015-03-24 The Boeing Company Honeycomb cores with splice joints and methods of assembling honeycomb cores
CN104198079A (en) * 2014-07-30 2014-12-10 肇庆爱晟电子科技有限公司 Quick response thermosensitive chip with high precision and reliability and manufacturing method thereof
JP2020053433A (en) * 2018-09-21 2020-04-02 Koa株式会社 Strain sensor resistor
JP2020085584A (en) * 2018-11-21 2020-06-04 立山科学工業株式会社 Resistor temperature sensor
JP2020191389A (en) * 2019-05-22 2020-11-26 Koa株式会社 Resistor

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