TW202238879A - 電子封裝件及其散熱結構 - Google Patents
電子封裝件及其散熱結構 Download PDFInfo
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Abstract
一種電子封裝件,係包含有電子元件及散熱結構,其中,該散熱結構具有複數結合柱,並於該些結合柱上形成有金屬層,以利用該些結合柱及金屬層,將該散熱結構穩固地設於該電子元件上。
Description
本發明涉及一種散熱結構,尤其指一種用於半導體元件之散熱結構及其相關之電子封裝件。
隨著電子產品在功能及處理速度之需求的提升,作為電子產品之核心組件的半導體晶片需具有更高密度之電子元件(Electronic Components)及電子電路(Electronic Circuits),故半導體晶片在運作時將隨之產生更大量的熱能。再者,由於傳統包覆該半導體晶片之封裝膠體係為不良傳熱材質,以使熱量不易逸散,因而若不能有效逸散半導體晶片所產生之熱量,將會造成半導體晶片之損害與產品信賴性問題。
因此,為了迅速將熱能散逸至外部,業界通常在半導體封裝件中配置散熱片(Heat Sink或Heat Spreader),該散熱片通常藉由散熱膠,如導熱介面材(Thermal Interface Material,簡稱TIM),結合至晶片背面,以藉散熱膠與散熱片逸散出半導體晶片所產生之熱量,再者,通常令散熱片之頂面外露出封裝膠體或直接外露於大氣中,俾取得較佳之散熱效果。
如圖1所示,習知半導體封裝件1之製法係先將一半導體晶片11以其作用面11a利用覆晶接合方式(即透過導電凸塊110與底膠111)設於一封裝基板10上,再將一散熱片13以其頂片130藉由TIM層12(其包含銲錫層與助焊劑)回銲結合於該半導體晶片11之非作用面11b上,且該散熱片13之支撐腳131透過黏著層14架設於該封裝基板10上。接著,進行封裝壓模作業,以供封裝膠體(圖略)包覆該半導體晶片11及散熱片13,並使該散熱片13之頂片130外露出封裝膠體。
於運作時,該半導體晶片11所產生之熱能係經由該非作用面11b、TIM層12而傳導至該散熱片13之頂片130以散熱至該半導體封裝件1之外部。
惟,習知半導體封裝件1中,傳統散熱片13及TIM層12之導熱效果有限,已無法滿足高散熱功效之需求。
因此,如何克服上述習知技術之種種問題,實已成為目前業界亟待克服之難題。
鑑於上述習知技術之種種缺失,本發明係提供一種散熱結構,係包括:散熱件,係具有複數第一結合柱與複數第二結合柱;第一金屬層,係形成於該第一結合柱與該第二結合柱上;以及第二金屬層,係形成於該第一金屬層上。
前述之散熱結構中,該第一結合柱之高度係低於該第二結合柱之高度。
前述之散熱結構中,該第二金屬層之厚度係大於該第一金屬層之厚度。
前述之散熱結構中,該第一金屬層及/或該第二金屬層之直徑係大於或等於該第一結合柱之直徑。
前述之散熱結構中,該第一金屬層及/或該第二金屬層之直徑係大於或等於該第二結合柱之直徑。
前述之散熱結構中,該第一金屬層之材質係為鎳。
前述之散熱結構中,該第二金屬層之材質係為金。
前述之散熱結構中,該散熱件係具有本體,以令該第一結合柱及第二結合柱立設於該本體上。
前述之散熱結構中,該散熱件內具有一腔體,以令工作流體於該腔體中流動。例如,該腔體中設置有毛細結構。或者,該腔體中設置有複數散熱鰭片。
本發明亦提供一種電子封裝件,係包括:承載結構;電子元件,係設於該承載結構上且電性連接該承載結構;以及前述之散熱結構,係以該第二金屬層結合於該電子元件上。
前述之電子封裝件中,更包括一設於該電子元件上之結合層,以結合該第二金屬層。
由上可知,本發明之電子封裝件主要藉由第一結合柱與第二結合柱之設計,以強化散熱結構與電子元件之間的接合力,故本發明能穩固地將該散熱結構設置於該電子元件上,以避免該散熱結構發生脫落之問題,並強化該電子封裝件之整體結構強度,以及提升該電子封裝件整體之散熱效能。
1:半導體封裝件
10:封裝基板
11:半導體晶片
11a:作用面
11b:非作用面
110:導電凸塊
111:底膠
12:TIM層
13:散熱片
130:頂片
131:支撐腳
14:黏著層
2:散熱結構
20:散熱件
20a:第一側
20b:第二側
200:本體
201:第一結合柱
202:第二結合柱
21:第一金屬層
22:第二金屬層
3:電子封裝件
400,500:腔體
401:毛細結構
501:入口
502:出口
503:散熱鰭片
8:電子元件
8a:第一表面
8b:第二表面
80:結合層
9:承載結構
A,B:範圍
D:距離
d1,d2:直徑
h1,h2:高度
T:間隙
t1,t2:厚度
圖1係為習知半導體封裝件之剖視示意圖。
圖2係為本發明之散熱結構之平面示意圖。
圖2A係為圖2之散熱結構之局部剖面示意圖。
圖2A-1至圖2A-3係為本發明之散熱結構之製法之局部剖面示意圖。
圖2B係為圖2A之散熱結構之局部放大剖面示意圖。
圖3A及圖3C係為本發明之電子封裝件之製法之剖面示意圖。
圖4及圖5係為對應圖2A之其它不同實施例之剖面示意圖。
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」、「下」、「前」、「後」、「左」、「右」、「第一」、「第二」及「一」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。
圖2係為本發明之散熱結構2之平面示意圖,且圖2A係為圖2之局部範圍A之剖面示意圖。如圖2A所示,該散熱結構2係包括:一散熱件20、形成於該散熱件20上之第一金屬層21、及形成於該第一金屬層21上之第二金屬層22。
所述之散熱件20係包含一例如為銅板、扁平式熱管(heat pipe)、均溫板(vapor chamber)或水冷板(cold plate)之本體200,其具有相對之第一側20a與第二側20b。於一實施例中,如圖4所示,該散熱件20係為均溫板形式,該均溫板係為在本體200內具有一腔體400之板體結構,該腔體400中設置有毛細結構401,且使工作流體(圖略)於該腔體400內流動,並透過該工作流體於該腔體400中的蒸發與凝結之循環作動,以達到快速恆溫的效果,進而提升該散熱件20整體地散熱效率。於一實施例中,如圖5所示,該散熱件20之本體200係為水冷板形式,該水冷板包含一腔體500及連通該腔體500的入口501與出口502,且在該腔體500中設置有複數散熱鰭片503,該複數散熱鰭片503可例如為縫隙極小且排列密度極高的鏟削式鰭片(skived fin),使工作流體(圖略)得以流入相鄰兩散熱鰭片503間的縫隙,以冷卻該複數散熱鰭片503所吸收到熱能,進而提升該水冷板的散熱效果。於一實施例中,所述之工作流體可為水、乙醇、丙酮、異丙醇、氯氟烴或冷媒。
再者,該第一金屬層21及該第二金屬層22之材質係例如為鎳(Ni)、金(Au)或其合金,係利用電鍍(plating)或濺鍍(sputtering)方式依序形成於該散熱件20上,其中,該第一金屬層21之材質不同於該第二金屬層22之材質。例如,該第一金屬層21之材質係為鎳(Ni),而該第二金屬層22之材質係為金(Au),且該第一金屬層21之厚度t1約為1微米(um)及該第二金屬層22之厚度t2約為2微米(um)。
圖2A-1至圖2A-3為該散熱結構2之製法。
如圖2A-1所示,利用蝕刻製程(如雷射蝕刻製程)於該本體200之第一側20a上形成相互間隔(如間隙T)配置之複數第一結合柱201與複數第二結合柱202,且該第一結合柱201之高度h1低於該第二結合柱202之高度h2。例如,各該第一結合柱201與各該第二結合柱202係交錯陣列排設。
於本實施例中,各該第一結合柱201及各該第二結合柱202係為圓柱狀結構或其它形狀的柱狀結構。
於本實施例中,各該第一結合柱201之高度h1約為3微米(um)及各該第二結合柱202之高度h2約為5微米(um)。
如圖2A-2所示,利用電鍍(plating)或濺鍍(sputtering)方式形成該第一金屬層21於該第一結合柱201之端面、該第二結合柱202之端面及本體200之第一側20a上(即該間隙T中)。
如圖2A-3所示,利用電鍍(plating)或濺鍍(sputtering)方式形成該第二金屬層22於該第一金屬層21之表面上。
圖2B係為圖2A之局部範圍B之放大圖。如圖2B所示,形成於各該第一結合柱201(或各該第二結合柱202上)之該第一金屬層21及該第二金屬層22之直徑d1係可等於或大於各該第一結合柱201(或各該第二結合柱202上)之直徑d2,且形成於各該第一結合柱201上之該第一金屬層21及第二金屬層22與其相鄰之各該第二結合柱202(或形成於各該第二結合柱202上之該第一金屬層21及第二金屬層22與其相鄰之各該第一結合柱201)之間具有一距離D。
例如,該第一金屬層21及該第二金屬層22之直徑d1係約為12微米(um),且各該第一結合柱201(或各該第二結合柱202上)之直徑d2係可等於或小於12微米(um),而該距離D約為10微米(um)。
圖3A及圖3C係為本發明之電子封裝件3之製法之剖面示意圖。
如圖3A所示,提供一承載結構9,且該承載結構9上設有至少一電子元件8。
於本實施例中,該承載結構9係例如為具有核心層之封裝基板、無核心層(coreless)形式封裝基板、具導電矽穿孔(Through-siliconvia,簡稱TSV)之矽中介板(Through Silicon interposer,簡稱TSI)或其它板型,其包含一絕緣部及至少一結合該絕緣部之線路部(圖未示),如至少一扇出(fan out)型重佈線路層(redistribution layer,簡稱RDL)。應可理解地,該承載結構9亦可為其它供承載電子元件之基材,如導線架(lead frame)、晶圓(wafer)、或其它具有金屬佈線(routing)之板體等,並不限於上述。
再者,該絕緣部係為介電材,如ABF(Ajinomoto Build-up Film)、感光型樹脂、聚醯亞胺(Polyimide,簡稱PI)、雙馬來醯亞胺三嗪(Bismaleimide Triazine,簡稱BT)、FR5之預浸材(Prepreg,簡稱PP)、模壓樹脂(Molding Compound)、模壓環氧樹脂(Epoxy Molding Compound,簡稱EMC)或其它適當材質,而該線路部係以圖案化方式形成如銅(Cu)或其合金之金屬材,但不限於此。
又,該電子元件8係為主動元件、被動元件或其組合者。該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。於本實施例中,如圖3A所示,該電子元件8係為半導體晶片,其具有相對之第一表面8a與第二表
面8b,該第一表面8a具有複數電極墊(圖未示),以藉由複數如銲錫材料、金屬柱(pillar)或其它等之導電凸塊(圖未示)利用覆晶方式設於該承載結構9之線路部上並電性連接該線路部,且於該電子元件8之第二表面8b上形成一結合層80。在一實施例中,該結合層80係例如為錫(Sn)或銲錫之金屬材質。
如圖3B至圖3C所示,設置該散熱結構2於該電子元件8之第二表面8b上,且使該結合層80與該散熱結構2相互接合。
於本實施例中,利用熱超音波接合(thermosonic bonding)之技術,藉由該第二金屬層22,將該散熱結構2與該結合層80相互接合。例如,各該第一結合柱201及各該第二結合柱202以其上之該第一金屬層21及該第二金屬層22接合於該結合層80中。
因此,本發明之電子封裝件3主要藉由該散熱結構2之高低不同的第一結合柱201與第二結合柱202之設計,以強化該散熱結構2與電子元件8之間的接合力,故本發明能穩固地將該散熱結構2設置於該電子元件8上,進而避免該散熱結構2發生脫落之問題,並強化該電子封裝件3之整體結構強度,同時提升該電子封裝件3整體之散熱效能。
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。
2:散熱結構
20:散熱件
201:第一結合柱
202:第二結合柱
21:第一金屬層
22:第二金屬層
3:電子封裝件
8:電子元件
80:結合層
9:承載結構
Claims (13)
- 一種散熱結構,係包括:散熱件,係具有複數第一結合柱與複數第二結合柱;第一金屬層,係形成於該第一結合柱與該第二結合柱上;以及第二金屬層,係形成於該第一金屬層上。
- 如請求項1所述之散熱結構,其中,該第一結合柱之高度係低於該第二結合柱之高度。
- 如請求項1所述之散熱結構,其中,該第二金屬層之厚度係大於該第一金屬層之厚度。
- 如請求項1所述之散熱結構,其中,該第一金屬層及/或該第二金屬層之直徑係大於或等於該第一結合柱之直徑。
- 如請求項1所述之散熱結構,其中,該第一金屬層及/或該第二金屬層之直徑係大於或等於該第二結合柱之直徑。
- 如請求項1所述之散熱結構,其中,該第一金屬層之材質係為鎳。
- 如請求項1所述之散熱結構,其中,該第二金屬層之材質係為金。
- 如請求項1所述之散熱結構,其中,該散熱件係具有本體,以令該第一結合柱及第二結合柱立設於該本體上。
- 如請求項1所述之散熱結構,其中,該散熱件內具有一腔體,以令工作流體於該腔體中流動。
- 如請求項9所述之散熱結構,其中,該腔體中設置有毛細結構。
- 如請求項9所述之散熱結構,其中,該腔體中設置有複數散熱鰭片。
- 一種電子封裝件,係包括:承載結構;電子元件,係設於該承載結構上且電性連接該承載結構;以及如請求項1至11之任一者所述之散熱結構,係以該第二金屬層結合於該電子元件上。
- 如請求項12所述之電子封裝件,更包括一設於該電子元件上之結合層,以結合該第二金屬層。
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