TW202238686A - Organic film forming apparatus and cleaning method of organic film forming apparatus comprising a chamber, a door, an exhaust unit, a support unit, a heating unit and at least one nozzle - Google Patents

Abstract

The present invention provides an organic film forming apparatus capable of fully removing foreign substances in a chamber, and a cleaning method for the organic film forming apparatus. The organic film forming apparatus according to an embodiment comprises: a chamber having an opening for loading or unloading a workpiece and capable of maintaining a gas environment where the gas pressure is reduced from the atmosphere; a door capable of opening and closing the opening of the chamber; an exhaust unit capable of exhausting the interior of the chamber; a support unit arranged inside the chamber and capable of supporting the workpieces; a heating unit arranged inside the chamber and capable of heating the workpieces; and at least one nozzle arranged inside the chamber and capable of supplying clean gas to the opening of the chamber.

Description

Organic film forming device, and method for cleaning organic film forming device

Embodiments of the present invention relate to an organic film forming device and a cleaning method for the organic film forming device.

The organic film forming apparatus includes, for example, a chamber capable of maintaining a relatively high pressure and further depressurized gas atmosphere, and a heater provided inside the chamber to heat a workpiece. Such an organic film forming apparatus forms an organic film by heating a substrate coated with a solution containing an organic material and a solvent under a relatively large pressure and a depressurized gas environment, and evaporating the solvent contained in the solution. (For example, refer to Patent Document 1) Here, when the solution is heated, substances contained in the solution may sublime (gasify). Components contained in the sublimate may become solid and adhere to the inner wall of the chamber or the like whose temperature is lower than that of the heated workpiece. If the solids adhering to the inner wall of the chamber, etc. are peeled off from the inner wall of the chamber, etc., they may become foreign substances such as particles and adhere to the surface of the workpiece.

Therefore, cleaning to remove solids adhering to the inner wall of the chamber and the like is performed periodically or as needed. For example, in a technical field different from that of an organic film forming apparatus, such as a semiconductor manufacturing apparatus, a technique has been proposed by sequentially performing evacuation of the inside of the chamber and evacuation of the chamber into the chamber while the chamber is sealed. The cleaning gas is supplied inside, and the foreign matter inside the chamber is discharged. (Refer to Patent Document 2) However, it has finally been found that in an organic film forming apparatus, even if cleaning like a semiconductor manufacturing apparatus is performed (for example, in a state where the chamber is sealed, evacuation of the interior of the chamber and supply of cleaning gas to the interior of the chamber are performed sequentially) , and foreign matter cannot be sufficiently removed. Therefore, development of an organic film forming device and a cleaning method for the organic film forming device capable of sufficiently removing foreign matter such as particles inside a chamber is desired. [Prior art literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2019-184229 [Patent Document 2] Japanese Patent Laid-Open No. 2002-184708

[Problem to be Solved by the Invention]

The problem to be solved by the present invention is to provide an organic film forming device capable of sufficiently removing foreign substances inside a chamber, and a cleaning method for the organic film forming device. [Means to solve the problem]

An organic film forming apparatus according to an embodiment includes: a chamber having an opening for loading or unloading a workpiece, capable of maintaining a gas environment with a relatively high pressure and further reduced pressure; a door capable of opening and closing the opening of the chamber; and an exhaust unit capable of Exhaust is carried out inside the chamber; a support part is arranged inside the chamber and can support the workpiece; a heating part is arranged inside the chamber and can heat the workpiece; and at least one nozzle , disposed inside the chamber, capable of supplying cleaning gas to the opening of the chamber. [Effect of the invention]

According to an embodiment of the present invention, there are provided an organic film forming device capable of sufficiently removing foreign matter in a chamber, and a cleaning method of the organic film forming device.

Embodiments are illustrated below with reference to the drawings. In addition, in each drawing, the same code|symbol is attached|subjected to the same component, and detailed description is abbreviate|omitted suitably.

FIG. 1 is a schematic perspective view illustrating an organic film forming apparatus 1 according to the present embodiment. In addition, the X direction, the Y direction, and the Z direction in FIG. 1 represent three directions orthogonal to each other. The up-and-down direction in this specification may be referred to as the Z direction.

The workpiece 100 before forming an organic film has a substrate and a solution coated on the upper surface of the substrate. The substrate can be, for example, a glass substrate, a semiconductor wafer, or the like. However, the substrate is not limited to the examples. Solutions include, for example, organic materials and solvents. The organic material is not particularly limited as long as it can be dissolved in a solvent. The solution can be used, for example, as a varnish or the like containing polyamic acid. However, the solution is not limited to the examples.

As shown in FIG. 1 , the organic film forming apparatus 1 is provided with, for example, a chamber 10 , an exhaust unit 20 , a processing unit 30 , a cooling unit 40 , a cleaning unit 50 , and a controller 60 .

The controller 60 includes, for example, a computing unit such as a central processing unit (Central Processing Unit, CPU), and a storage unit such as a memory. The controller 60 can be set as a computer etc., for example. The controller 60 controls the operation of each element provided in the organic film forming apparatus 1 based on the control program stored in the storage unit.

The chamber 10 has an airtight structure capable of maintaining a relatively high pressure and further decompressed gas environment. The chamber 10 has a box shape. The appearance shape of the chamber 10 is not particularly limited. The external shape of the chamber 10 may be, for example, a rectangular parallelepiped. The chamber 10 can be formed of metal such as stainless steel, for example.

In the Y direction, at one of the ends of the chamber 10, a flange 11 may be provided. A sealing material 12 such as an O-ring may be provided on the flange 11 . The opening 11 a of the chamber 10 on the side where the flange 11 is provided can be opened and closed by the door 13 . The door 13 is pushed against the flange 11 (sealing material 12 ) by a driving device not shown, whereby the opening 11 a of the chamber 10 is closed airtightly. The door 13 is separated from the flange 11 by a driving device not shown, thereby opening the opening 11 a of the chamber 10 , and the workpiece 100 can be carried in or out through the opening 11 a. In addition, by opening the opening 11 a of the chamber 10 , cleaning can be performed by the cleaning unit 50 described later. That is, the chamber 10 has the opening 11a through which the workpiece 100 is carried in or out, and can maintain a gas atmosphere in which a relatively high pressure is further reduced. The door 13 can open and close the opening 11 a of the chamber 10 .

In the Y direction, at the other end of the chamber 10, a flange 14 may be provided. A sealing material 12 such as an O-ring may be provided on the flange 14 . The opening of the chamber 10 on the side where the flange 14 is provided can be opened and closed by a cover 15 . For example, the cover 15 may be detachably provided on the flange 14 using fastening members such as screws. When maintenance or the like is performed, the opening of the side of the chamber 10 on which the flange 14 is provided is exposed by removing the cover 15 .

A cooling unit 16 may be provided on the outer wall of the chamber 10 and the outer surface of the door 13 . A cooling water supply unit (not shown) is connected to the cooling unit 16 . The cooling unit 16 may be, for example, a water jacket. If the cooling unit 16 is provided, the temperature of the outer wall of the chamber 10 or the temperature of the outer surface of the gate 13 can be suppressed from becoming higher than a predetermined temperature.

The exhaust unit 20 exhausts the inside of the chamber 10 . The exhaust unit 20 includes, for example, a first exhaust unit 21 , a second exhaust unit 22 , and a third exhaust unit 23 . The first exhaust part 21 is, for example, connected to the exhaust port 17 provided on the bottom surface of the chamber 10 . The first exhaust unit 21 includes, for example, an exhaust pump 21a and a pressure control unit 21b. The exhaust pump 21a can be used as an exhaust pump that performs rough pumping and exhausting from atmospheric pressure to a predetermined pressure. Therefore, the exhaust pump 21a has a larger displacement than the exhaust pump 22a described later. The exhaust pump 21a may be, for example, a dry vacuum pump or the like.

The pressure control unit 21b is provided, for example, between the exhaust port 17 and the exhaust pump 21a. The pressure control unit 21b controls the internal pressure of the chamber 10 so that the internal pressure of the chamber 10 becomes a predetermined pressure based on the output of a vacuum gauge (not shown) for detecting the internal pressure of the chamber 10 . The pressure control unit 21 b can be, for example, an automatic pressure controller (Auto Pressure Controller, APC) or the like.

In addition, a cold trap 24 for trapping discharged sublimates is provided between the exhaust port 17 and the pressure control unit 21b. In addition, a valve 25 is provided between the exhaust port 17 and the cold trap 24 . The valve 25 plays a role of preventing fluid from flowing into the cold trap 24 in a cooling step described later.

The second exhaust portion 22 is, for example, connected to the exhaust port 18 provided on the bottom surface of the chamber 10 . The second exhaust unit 22 includes, for example, an exhaust pump 22a and a pressure control unit 22b. The exhaust pump 22a exhausts to a lower predetermined pressure after performing rough exhaust by the exhaust pump 21a. The exhaust pump 22a has, for example, an exhaust capability capable of exhausting up to a molecular flow region of high vacuum. For example, the exhaust pump 22 a may be a turbo molecular pump (Turbo Molecular Pump, TMP) or the like.

The pressure control unit 22b is provided, for example, between the exhaust port 18 and the exhaust pump 22a. The pressure control unit 22b controls the internal pressure of the chamber 10 so that the internal pressure of the chamber 10 becomes a predetermined pressure based on the output of a vacuum gauge (not shown) for detecting the internal pressure of the chamber 10 . The pressure control unit 22b can be, for example, an APC or the like. Moreover, like the first exhaust part 21, a cold trap 24 and a valve 25 may be provided between the exhaust port 18 and the pressure control part 21b.

In addition, the case where the exhaust port 17 and the exhaust port 18 are provided on the bottom surface of the chamber 10 was exemplified above, but the exhaust port 17 and the exhaust port 18 may be provided on the ceiling surface of the chamber 10 , for example. If the exhaust port 17 and the exhaust port 18 are provided on the bottom surface or the ceiling surface of the chamber 10 , an air flow toward the bottom surface or the ceiling surface of the chamber 10 can be formed inside the chamber 10 .

Here, when the workpiece 100 coated with the solution containing the organic material and the solvent is heated, substances contained in the solution may sublime (gasify). Components contained in the sublimate may become solid and adhere to the inner wall of the chamber 10 or the like whose temperature is lower than that of the heated workpiece 100 . If the solids adhering to the inner wall of the chamber 10 and the like are peeled off from the inner wall of the chamber 10 and the like, they may become foreign substances such as particles and adhere to the surface of the workpiece 100 .

In this case, if an air flow is formed inside the chamber 10 toward the bottom surface or the ceiling surface of the chamber 10 , foreign substances such as sublimates and particles are easily discharged to the outside of the chamber 10 along with the air flow. Therefore, foreign matter such as particles can be suppressed from adhering to the workpiece 100 .

The processing unit 30 has, for example, a frame 31 , a heating unit 32 , a support unit 33 , a soaking unit 34 , a soaker support unit 35 , and a cover 36 . Inside the processing unit 30, a processing area 30a and a processing area 30b are provided. The processing area 30 a and the processing area 30 b serve as spaces in which processing is performed on the workpiece 100 . The workpiece 100 is supported inside the processing area 30a and the processing area 30b. The processing area 30b is disposed above the processing area 30a. Moreover, although the case where two processing regions were provided was illustrated, it is not limited to this. Only one treatment area may be provided, or three or more treatment areas may be provided. In this embodiment, the case where two treatment areas are provided is illustrated as an example, but the case where one treatment area and three or more treatment areas are provided can be considered in the same way.

The processing area 30 a and the processing area 30 b are provided between the heating part 32 and the heating part 32 . The treatment area 30a and the treatment area 30b are surrounded by the soaking part 34 (the upper soaking plate 34a, the lower soaking plate 34b, the side soaking plate 34c, and the side soaking plate 34d).

As will be described later, the upper vapor chamber 34a and the lower vapor chamber 34b are formed by being supported by a plurality of vapor chamber support parts 35 by a plurality of plate-shaped members. Therefore, the processing area 30a and the inner space of the chamber 10 are connected through gaps provided between the upper vapor chambers 34a, between the lower vapor chambers 34b, and the like. In addition, between the upper vapor chamber 34a (lower vapor chamber 34b ) and the side vapor chamber 34c, and between the upper vapor chamber 34a (lower vapor chamber 34b ) and the side vapor chamber 34d are also formed. gap. Therefore, when the pressure of the space between the inner wall of the chamber 10 and the processing unit 30 is reduced, the space inside the processing region 30 a is also reduced. The treatment area 30b has the same structure as the treatment area 30a, and therefore description thereof will be omitted.

When the pressure of the space between the inner wall of the chamber 10 and the processing part 30 is reduced, the heat released from the processing area 30a and the processing area 30b to the outside can be suppressed. That is, heating efficiency or heat storage efficiency can be improved. Therefore, the electric power applied to the heater 32a described later can be reduced. In addition, if the electric power applied to the heater 32a can be reduced, the temperature of the heater 32a can be suppressed from becoming more than a predetermined temperature, and thus the life of the heater 32a can be extended.

Moreover, since heat storage efficiency improves, the temperature of the processing area 30a and the processing area 30b can be raised rapidly. Therefore, it is also possible to cope with processing requiring a rapid temperature rise. In addition, since the temperature increase of the outer wall of the chamber 10 can be suppressed, the cooling unit 16 can be simplified.

The frame 31 has a skeleton structure including an elongated plate or section steel or the like. The outer shape of the frame 31 may be set to be the same as that of the chamber 10 . The external shape of the frame 31 may be, for example, a rectangular parallelepiped.

A plurality of heating units 32 are provided. The heating part 32 can be provided in the lower part of the processing area 30a, the processing area 30b, and the upper part of the processing area 30a, the processing area 30b. The heating part 32 provided in the lower part of the processing area 30a and the processing area 30b becomes a lower heating part. The heating part 32 provided in the upper part of the processing area|region 30a and the processing area 30b becomes an upper part heating part. The lower heating part faces the upper heating part. In addition, when a plurality of processing regions are stacked in the vertical direction, the upper heating unit provided in the lower processing region can also be used as the lower heating unit provided in the upper processing region.

The heating unit 32 is provided inside the chamber 10 and heats the workpiece 100 . For example, the lower surface (back surface) of the workpiece 100 supported in the processing area 30a is heated by the heating unit 32 provided at the lower portion of the processing area 30a. The upper surface (surface) of the workpiece 100 supported in the processing area 30a is heated by the heating unit 32 serving as both the processing area 30a and the processing area 30b.

The lower surface (back surface) of the workpiece 100 supported in the processing area 30b is heated by the heating unit 32 serving both as the processing area 30a and the processing area 30b. The upper surface (surface) of the workpiece 100 supported in the processing area 30b is heated by the heating unit 32 provided at the upper portion of the processing area 30b. In this way, since the number of objects of the heating part 32 can be reduced, reduction of power consumption, reduction of manufacturing cost, space saving, etc. can be achieved.

Each of the plurality of heating parts 32 has at least one heater 32a and a pair of holders 32b. In addition, the case where a plurality of heaters 32a are provided will be described below. The heater 32a has a rod shape and extends in the Y direction between the pair of holders 32b. A plurality of heaters 32a may be arranged in a row along the X direction. The plurality of heaters 32a may be provided at equal intervals, for example. The heater 32 a may be, for example, a sheathed heater, a far-infrared heater, a far-infrared lamp, a ceramic heater, a cartridge heater, or the like. In addition, various heaters can also be covered by a quartz cover.

In addition, in this specification, various heaters covered with a quartz cover are also referred to as "rod-shaped heaters". In addition, the cross-sectional shape of the "rod shape" is not limited, and includes, for example, a columnar shape, a prism shape, and the like. In addition, the heater 32a is not limited to illustration. The heater 32a should just be able to heat the workpiece 100 in a gas environment having a relatively high pressure and further decompressed. That is, the heater 32a should just use the thermal energy obtained by radiation.

The specifications, numbers, intervals, etc. of the plurality of heaters 32a in the upper heating section and the lower heating section can be appropriately determined according to the composition of the solution to be heated (the heating temperature of the solution), the size of the workpiece 100, and the like. The specifications, number, intervals, and the like of the plurality of heaters 32a can be appropriately determined by conducting simulations or experiments.

In addition, the space where the heaters 32a are provided is surrounded by the holder 32b, the upper vapor chamber 34a, the lower vapor chamber 34b, the side vapor chamber 34c, and the side vapor chamber 34d. Gaps are provided between the upper vapor chambers 34a and between the lower vapor chambers 34b. Therefore, part of the cooling gas supplied from the cooling unit 40 described later to the space provided with the plurality of heaters 32a flows into the processing area 30a or the processing area 30b. However, the space provided with the plurality of heaters 32a can be regarded as a substantially closed space. Therefore, by supplying the cooling gas from the cooling unit 40 to the space in which the plurality of heaters 32a are installed, the plurality of heaters 32a, the upper vapor chamber 34a, the lower vapor chamber 34b, the side vapor chambers 34c, and side vapor chamber 34d for cooling.

The pair of holders 32b extend along the X direction (for example, the treatment area 30a, the longitudinal direction of the treatment area 30b). The pair of holders 32b face each other in the Y direction. One of the holders 32b is fixed to the end face of the frame 31 on the door 13 side. The other holder 32b is fixed to the end face of the frame 31 on the side opposite to the gate 13 side. The pair of holders 32b can be fixed to the frame 31 using fastening members such as screws, for example. A pair of holders 32b hold a non-heat radiation portion near the end of the heater 32a. The pair of holders 32b can be formed, for example, from elongated metal plates or shaped steel. The material of the pair of holders 32b is not particularly limited, but is preferably a material having heat resistance and corrosion resistance. The material of the pair of holders 32b can be, for example, stainless steel or the like.

The supporting part 33 is provided inside the chamber 10 and supports the workpiece 100 . For example, the support part 33 supports the workpiece 100 between the upper heating part and the lower heating part. Multiple support parts 33 may be provided. The plurality of support parts 33 are provided in the lower part of the processing area 30a and the lower part of the processing area 30b. The plurality of support parts 33 may be formed as rod-shaped bodies.

One end (upper end) of the plurality of support portions 33 is in contact with the lower surface (back surface) of the workpiece 100 . Therefore, the shape of one end portion of the plurality of support portions 33 is preferably hemispherical or the like. When the shape of one end portion of the plurality of support portions 33 is hemispherical, it is possible to suppress damage to the lower surface of the workpiece 100 . In addition, the contact area of the lower surface of the workpiece 100 and the plurality of support parts 33 can be reduced, and thus the heat transferred from the workpiece 100 to the plurality of support parts 33 can be reduced.

The workpiece 100 is heated by the heat energy obtained by radiation in a gas environment with a larger pressure and further reduced pressure, so the distance from the upper heating part to the upper surface of the workpiece 100 and the distance from the lower heating part to the lower surface of the workpiece 100 The distance is the distance at which heat energy obtained by radiation can reach the workpiece 100 .

The other ends (lower ends) of the plurality of support portions 33 may be fixed to, for example, a plurality of bar-shaped members, plate-shaped members, or the like spanned between the pair of frames 31 . In this case, it is preferable that the plurality of support portions 33 are detachably provided on a rod-shaped member or the like. In this way, operations such as maintenance become easy.

The number, arrangement, interval, and the like of the plurality of support portions 33 can be appropriately changed according to the size, rigidity (flexure), and the like of the workpiece 100 . The material of the plurality of support portions 33 is not particularly limited, but is preferably a material having heat resistance and corrosion resistance. The material of the plurality of supporting parts 33 can be, for example, stainless steel or the like.

The soaking unit 34 has a plurality of upper soaking plates 34a, a plurality of lower soaking plates 34b, a plurality of side soaking plates 34c, and a plurality of side soaking plates 34d. A plurality of upper vapor chambers 34a, a plurality of lower vapor chambers 34b, a plurality of side vapor chambers 34c, and a plurality of side vapor chambers 34d have a plate shape.

The plurality of upper vapor chambers 34 a are provided on the lower heating unit side (the workpiece 100 side) in the upper heating unit. The plurality of upper vapor chambers 34a are provided away from the plurality of heaters 32a. That is, gaps are provided between the upper surfaces of the plurality of upper vapor chambers 34a and the lower surfaces of the plurality of heaters 32a. A plurality of upper vapor chambers 34a are arranged along the X direction. A gap is provided between the plurality of upper vapor chambers 34a. If a gap is provided, a dimensional difference due to thermal expansion can be absorbed. Therefore, it is suppressed that the upper vapor chamber 34a interferes with each other and deform|transforms. In addition, as described above, the pressure in the spaces of the processing area 30a and the processing area 30b can be reduced through the gap.

The plurality of lower vapor chambers 34 b are provided on the upper heating unit side (the workpiece 100 side) in the lower heating unit. The plurality of lower vapor chambers 34b are provided away from the plurality of heaters 32a. That is, gaps are provided between the lower surfaces of the plurality of lower vapor chambers 34b and the upper surfaces of the plurality of heaters 32a. A plurality of lower vapor chambers 34b are arranged along the X direction. A gap is provided between the plurality of lower vapor chambers 34b. If a gap is provided, a dimensional difference due to thermal expansion can be absorbed. Therefore, it is suppressed that the lower vapor chamber 34b interferes with each other and deform|transforms. In addition, the pressure in the spaces of the processing area 30a and the processing area 30b can be reduced through the gap.

The side vapor chambers 34c are provided on the side portions of both sides of the treatment area 30a and the treatment area 30b in the X direction, respectively. The side vapor chamber 34 c may be provided inside the cover 36 . In addition, as described above, a gap is provided between the side vapor chamber 34c and the upper vapor chamber 34a or the lower vapor chamber 34b. The pressure in the spaces of the processing area 30a and the processing area 30b can be reduced through the gap.

The side vapor chambers 34d are respectively provided on the sides of the processing area 30a and the processing area 30b in the Y direction. The side vapor chamber 34d provided on the door 13 side may be provided on the door 13 with an interval from the cover 36 . The side vapor chamber 34d provided on the cover 15 side may be provided inside the cover 36 . In addition, as described above, a gap is provided between the side vapor chamber 34d and the upper vapor chamber 34a or the lower vapor chamber 34b. The pressure in the spaces of the processing area 30a and the processing area 30b can be reduced through the gap.

In this embodiment, the gaps provided between the upper vapor chambers 34a and between the lower vapor chambers 34b are formed to be larger than the gaps provided between the upper vapor chambers 34a (lower vapor chambers 34b ) and the side portions. The gaps between the hot plates 34c and between the upper vapor chamber 34a (lower vapor chamber 34b ) and the side vapor chamber 34d are large. The reason for this will be described later.

As described above, the plurality of heaters 32a has a rod shape, and is arranged in a line at predetermined intervals. When the heater 32a is rod-shaped, heat is radiated radially from the central axis of the heater 32a. In this case, the shorter the distance between the central axis of the heater 32a and the heated portion, the higher the temperature of the heated portion. Therefore, when the workpiece 100 is held so as to face the plurality of heaters 32a, the area of the workpiece 100 located directly above or directly below the heaters 32a is smaller than the area located between the plurality of heaters 32a. The region of the workpiece 100 directly above or directly below the space has a higher temperature. That is, when the workpiece 100 is directly heated using a plurality of rod-shaped heaters 32 a, an in-plane distribution occurs in the temperature of the heated workpiece 100 .

If in-plane distribution occurs in the temperature of the workpiece 100, the quality of the formed organic film may decrease. For example, there is a possibility that bubbles may be generated in the portion where the temperature becomes higher, or the composition of the organic film may change in the portion where the temperature becomes higher.

In the organic film formation apparatus 1 of this embodiment, the above-mentioned some upper vapor chamber 34a and several lower vapor chamber 34b are provided. Therefore, the heat radiated from the plurality of heaters 32a enters the plurality of upper vapor chambers 34a and the plurality of lower vapor chambers 34b, and is radiated toward the workpiece 100 while propagating in the plane direction inside the vapor chambers. As a result, the occurrence of in-plane distribution in the temperature of the workpiece 100 can be suppressed, and the quality of the formed organic film can be improved.

The plurality of upper vapor chambers 34a and the plurality of lower vapor chambers 34b propagate the incident heat in the surface direction, and therefore the material of these vapor chambers is preferably a material with high thermal conductivity. The several upper vapor chambers 34a and the several lower vapor chambers 34b can be made of aluminum, copper, stainless steel, etc., for example. Furthermore, when using an easily oxidized material such as aluminum or copper, it is preferable to provide a layer containing a material that is not easily oxidized on the surface.

Part of the heat radiated from the plurality of upper vapor chambers 34a and the plurality of lower vapor chambers 34b is directed to the side of the processing area. Therefore, the above-mentioned side vapor chamber 34c and side vapor chamber 34d are provided on the side of the treatment area. The heat incident on the side vapor chambers 34 c and 34 d propagates in the surface direction through the side vapor chambers 34 c and 34 d , and part of the heat is radiated toward the workpiece 100 . Therefore, the heating efficiency of the workpiece 100 can be improved.

The material of the side vapor chamber 34c and the side vapor chamber 34d may be the same as that of the upper vapor chamber 34a and the lower vapor chamber 34b described above.

In addition, above, the case where a plurality of upper vapor chambers 34a and a plurality of lower vapor chambers 34b are arranged in a row along the X direction has been exemplified, but at least one of the upper vapor chambers 34a and the lower vapor chambers 34b may be a single Plate components.

A plurality of vapor chamber support parts 35 are arranged in a row along the X direction. The vapor chamber support portion 35 may be provided directly below the upper vapor chambers 34a in the X direction. The plurality of vapor chamber support parts 35 can be fixed to the pair of holders 32b using fastening members such as screws. A pair of vapor chamber support parts 35 detachably supports both ends of the upper vapor chamber 34a. In addition, the some vapor chamber support part 35 which supports the some lower vapor chamber 34b may have the same structure.

If the upper vapor chamber 34a and the lower vapor chamber 34b are supported by a pair of vapor chamber support parts 35, even if the upper vapor chamber 34a and the lower vapor chamber 34b thermally expand, the upper vapor chamber 34a and the lower vapor chamber can be suppressed. Plate 34b interferes. Therefore, deformation of the upper vapor chamber 34a and the lower vapor chamber 34b can be suppressed.

The cover 36 has a plate shape and covers the upper surface, the bottom surface, and the side surfaces of the frame 31 . That is, the inside of the frame 31 is covered by the cover 36 . However, the cover 36 on the door 13 side may be provided on the door 13, for example.

The cover 36 surrounds the treatment area 30 a and the treatment area 30 b , but gaps are provided in the boundary between the upper surface and the side surface of the frame 31 , the boundary line between the side surface and the bottom surface of the frame 31 , and the vicinity of the door 13 .

In addition, the cover 36 provided on the upper surface and the bottom surface of the frame 31 is divided into a plurality. In addition, gaps are provided between the divided covers 36 . That is, the internal space of the processing part 30 (processing area 30a, the processing area 30b) communicates with the internal space of the chamber 10 through these gaps. Therefore, the pressure of the processing area 30a, the processing area 30b, and the pressure of the space between the inner wall of the chamber 10 and the cover 36 can be made the same. The cover 36 can be formed of stainless steel etc., for example.

The cooling unit 40 supplies cooling gas to the region where the heating unit 32 is provided. For example, the cooling part 40 cools the heat soaking part 34 surrounding the processing area 30 a and the processing area 30 b with cooling gas, and indirectly cools the workpiece 100 in a high temperature state by the cooled heat soaking part 34 . In addition, for example, the cooling unit 40 may supply cooling gas to the workpiece 100 to directly cool the workpiece 100 in a high-temperature state.

That is, the cooling unit 40 can indirectly and directly cool the workpiece 100 . In addition, the cooling unit 40 can function as the cleaning unit 50 that supplies the cleaning gas G described later to the processing region 30 a and the processing region 30 b in a cleaning step described later.

The cooling unit 40 has, for example, a first gas supply path 40a and a second gas supply path 40b. First, the first gas supply path 40a will be described. The first gas supply path 40 a has a nozzle 41 , a gas source 42 , a gas control unit 43 , and a switching valve 54 .

As shown in FIG. 1 , the nozzle 41 may be connected to a space where a plurality of heaters 32a are provided. The nozzle 41 penetrates the cover 36, for example, and can be attached to the side vapor chamber 34c, the frame 31, etc. FIG. A plurality of nozzles 41 may be provided in the Y direction (see FIG. 3 ). In addition, the number and arrangement of the nozzles 41 can be changed as appropriate. For example, nozzles 41 may be provided on one side of the processing unit 30 in the X direction, or nozzles 41 may be provided on both sides of the processing unit 30 .

The gas source 42 supplies cooling gas to the nozzle 41 . The gas source 42 may be, for example, a high-pressure gas cylinder, factory piping, or the like. In addition, multiple gas sources 42 may also be provided.

The cooling gas is preferably a gas that does not easily react with the heated workpiece 100 . The cooling gas can be, for example, nitrogen gas, a rare gas, or the like. The rare gas is, for example, argon or helium. If the cooling gas is nitrogen, it is possible to reduce the running cost. Since helium has a high thermal conductivity, if helium is used as the cooling gas, the cooling time can be shortened. The temperature of the cooling gas may be, for example, room temperature (for example, 25° C.) or lower.

The gas control unit 43 is provided between the nozzle 41 and the gas source 42 . The gas control unit 43 can control, for example, supply and stop of the cooling gas, or at least one of the flow velocity and the flow rate of the cooling gas.

In addition, the supply timing of the cooling gas may be set after the heat treatment of the workpiece 100 is completed. In addition, the completion|finish of heat processing can be made after maintaining the temperature which formed the organic film for predetermined time.

The switching valve 54 is a valve for switching between the first gas supply path 40a and the second gas supply path 40b. The switching valve 54 is provided between the nozzle 41 and the gas control unit 43 outside the chamber 10 .

Next, the second gas supply path 40b will be described. The second gas supply path 40b is provided for cleaning the inside of the chamber 10 in a cleaning step described later. The second gas supply path 40 b discharges foreign matter such as particles inside the chamber 10 to the outside of the chamber 10 through the opening 11 a of the chamber 10 . For example, the second gas supply path 40 b supplies the cleaning gas G to the processing area 30 a and the inside of the processing area 30 b to form a gas flow to the opening 11 a of the chamber 10 .

In this embodiment, the 2nd gas supply path 40b also functions as a "cleaning part" of this invention. Hereinafter, the second gas supply path 40 b may also be referred to as a cleaning unit 50 .

The cleaning unit 50 includes, for example, a nozzle 41 , a gas source 52 , a gas control unit 53 , and a switching valve 54 . In this case, the cleaning unit 50 is connected to the first gas supply path 40 a via the switching valve 54 .

The gas source 52 supplies cleaning gas G to the plurality of nozzles 41 . The gas source 52 may be, for example, a high-pressure gas cylinder, factory piping, or the like. In addition, a plurality of gas sources 52 may also be provided.

The cleaning gas G is preferably a gas that is not likely to react with the inner wall of the heated chamber 10 or the components inside the chamber 10 . Cleaning gas G may be, for example, clean dry air, nitrogen, carbon dioxide (CO ₂ ), rare gas, or the like. The rare gas is, for example, argon or helium. In this case, if the cleaning gas G is clean dry air or nitrogen, the running cost can be reduced.

The cleaning gas G may be the same as or different from the cooling gas described above. When the cleaning gas G is the same as the cooling gas, either the gas source 52 or the gas source 42 may be provided. The temperature of the cleaning gas G may be, for example, room temperature (for example, 25° C.).

The gas control unit 53 is provided between the switching valve 54 and the gas source 52 . The gas control unit 53 can control the supply and stop of the cleaning gas G, for example. In addition, the gas control unit 53 may control at least one of the flow velocity and the flow rate of the cleaning gas G, for example. The flow rate or flow rate of the cleaning gas G can be appropriately changed according to the size of the chamber 10 or the shape, quantity, and arrangement of the nozzles 41 . The flow velocity or flow rate of the cleaning gas G can be obtained appropriately by performing experiments or simulations, for example.

Next, the operation of the organic film forming apparatus 1 will be exemplified. FIG. 2 is a diagram illustrating a processing procedure of the workpiece 100 . As shown in FIG. 2 , the organic film formation process includes a workpiece loading step, a temperature raising step, a heat treatment step, a cooling step, a workpiece carrying out step, and a cleaning step. First, in the workpiece loading step, the door 13 is separated from the flange 11 , and the workpiece 100 is loaded into the inner space of the chamber 10 . After loading the workpiece 100 into the inner space of the chamber 10 , the inner space of the chamber 10 is decompressed to a predetermined pressure by the exhaust unit 20 .

After the internal space of the chamber 10 is depressurized to a predetermined pressure, electric power is applied to the heater 32a. Then, as shown in FIG. 2 , the temperature of the workpiece 100 rises. The step of raising the temperature of the workpiece 100 is called a temperature raising step. In this embodiment, the temperature raising process is implemented twice (temperature raising process (1), temperature raising process (2)). In addition, the predetermined pressure may be a pressure at which the polyamic acid in the solution does not react with oxygen remaining in the inner space of the chamber 10 to be oxidized. The predetermined pressure may be set at, for example, 1×10 ^-2 Pa to 100 Pa. That is, it is not necessarily necessary to use the second exhaust unit 22 to exhaust, and after the exhaust is started by the first exhaust unit 21, when the internal space of the chamber 10 becomes a pressure in the range of 10 Pa to 100 Pa, The heating of the workpiece 100 by the heating unit 32 is started.

After the temperature raising step, a heat treatment step is performed. The heat treatment step is a step of maintaining a predetermined temperature for a predetermined time. In this embodiment, a heat treatment step (1) and a heat treatment step (2) may be provided. The heat treatment step (1) may be, for example, a step of heating the workpiece 100 at the first temperature for a predetermined time to discharge moisture or gas contained in the solution. What is necessary is just to set 1st temperature as 100 degreeC - 200 degreeC, for example.

By performing the heat treatment step (1), it is possible to prevent moisture or gas contained in the solution from being contained in the finished organic film. In addition, depending on the components of the solution, etc., the first heat treatment step may be performed multiple times at different temperatures, or the first heat treatment step may be omitted.

The heat treatment step (2) is a step of maintaining the substrate (work 100 ) coated with the solution at a predetermined pressure and temperature for a predetermined time to form an organic film. The 2nd temperature should just be set as the temperature which causes imidization, for example, should just be 300 degreeC or more. In the present embodiment, in order to obtain an organic film having a high filling degree of molecular chains, a heat treatment step is performed at 400°C to 600°C.

The cooling step is a step of lowering the temperature of the workpiece 100 on which the organic film is formed. In the present embodiment, it is performed after the heat treatment step (2). The workpiece 100 is cooled to a temperature at which it can be carried out. For example, if the temperature of the workpiece 100 to be carried out is normal temperature, it is easy to carry out the workpiece 100 . However, in the organic film forming apparatus 1, the workpiece 100 is continuously heat-treated. Therefore, if the temperature of the workpiece 100 is set to normal temperature every time the workpiece 100 is unloaded, the time for raising the temperature of the next workpiece 100 becomes longer. That is, there is a possibility that productivity may decrease. The temperature of the workpiece 100 to be carried out may be, for example, 50°C to 90°C. Let this carry-out temperature be the 3rd temperature.

The controller 60 closes the valve 25 of the first exhaust part 21 . Then, the cooling unit 40 is controlled to supply the cooling gas to the space in which the plurality of heaters 32a are installed, thereby indirectly and directly lowering the temperature of the workpiece 100 .

Therefore, the gap ratio between the upper vapor chambers 34a and between the lower vapor chambers 34b is set between the upper chamber 34a (lower chamber 34b ) and the side chambers 34c, And the gap between the upper vapor chamber 34a (lower vapor chamber 34b ) and the side vapor chamber 34d is large. Accordingly, when the cooling gas is supplied to the cooling unit 40 , the amount of the cooling gas to the workpiece 100 can be increased. In addition, the amount of cooling gas discharged from the processing area 30a and the processing area 30b can be reduced. Therefore, the workpiece 100 can be efficiently cooled.

In addition, immediately after the organic film is formed, the internal pressure of the chamber 10 is lower than the atmospheric pressure, that is, the internal gas of the chamber 10 is in a state where there is little gas. Therefore, even if the cooling gas is supplied to the inside of the chamber 10 , it is possible to suppress scattering of the components contained in the sublimate which become solid by the supplied cooling gas.

When the output of a vacuum gauge (not shown) that detects the internal pressure of the chamber 10 becomes the same pressure as the atmospheric pressure, the controller 60 closes the valve 25 of the second exhaust part 22 and opens the valve of the third exhaust part 23. 25. Always discharge cooling gas.

The controller 60 may control the switching valve 54 to supply the cleaning gas G to the space provided with the plurality of heaters 32a after the detected value of the thermometer not shown becomes 200° C. or lower. When the cleaning gas G is clean dry air (Clean Dry Air, CDA), and the cooling gas is N ₂ or rare gas, the usage of N ₂ or rare gas can be reduced.

In the work unloading step, after the temperature of the work 100 on which the organic film has been formed reaches the third temperature, the supply of the cooling gas or the cleaning gas G introduced into the chamber 10 is stopped. Then, the opening and closing door 13 is separated from the flange 11, and the workpiece 100 is carried out.

As described above, when the sublimation comes into contact with an element whose temperature is lower than that of the heated workpiece 100 , components contained in the sublimation sometimes become solid and adhere to the element.

However, since the upper vapor chamber 34a and the lower vapor chamber 34b are heated, the components contained in the sublimate can be suppressed from adhering to the upper vapor chamber 34a and the lower vapor chamber 34b. In addition, as described above, since the airflow to the bottom surface (or ceiling surface) of the chamber 10 provided with the exhaust port 17 or the exhaust port 18 is formed inside the chamber 10, the sublimate is accompanied by the airflow. And it is discharged to the outside of the chamber 10.

As described above, since sublimates are considered to be discharged out of the chamber 10 , it is considered that components contained in the sublimates can be suppressed from adhering to the workpiece 100 . Therefore, conventionally, after the workpiece 100 is unloaded, the next workpiece 100 is loaded into the chamber 10, and the above steps are repeated.

However, it was finally found that actually a small amount of sublimates adhered to the inner wall of the chamber 10 . By repeating the steps of forming the organic film, a small amount of sublimated product also repeatedly adheres to the inner wall of the chamber 10 . As a result, the solid produced from the sublimate becomes larger. The solids generated from the sublimates flake off from the inner wall of the chamber 10 when they grow to some extent. The solids peeled off from the inner wall of the chamber 10 may become foreign matter such as particles and adhere to the surface of the workpiece 100 .

In general, an anti-adhesive plate is provided to prevent sublimates from adhering to the inner wall of the chamber, and the anti-adhesive plate is periodically replaced. However, the replacement work of the above method is cumbersome. Therefore, the inventors of the present invention have studied cleaning for removing solids generated from sublimates from the inner wall of the chamber 10 and the like.

Next, the operation of the cleaning unit 50 and the cleaning method of the organic film forming apparatus of the present embodiment will be described together. FIG. 3 is a schematic cross-sectional view for illustrating the function of the cleaning unit 50 . In addition, in order to avoid becoming complicated, the description of elements and the like provided inside the chamber 10 is omitted.

As shown in FIG. 3 , the cleaning unit 50 supplies the cleaning gas G to the inside of the chamber 10 when the opening 11 a of the chamber 10 is opened (when the door 13 is separated from the flange 11 ). For example, when the opening 11 a of the chamber 10 is opened, the controller 60 controls the gas control unit 53 so that the cleaning gas G flows from the nozzle 41 into the heating unit 32 . The cleaning gas G is supplied from the inside of the heating unit 32 to the inside of the chamber 10 .

As described above, the gap ratio between the upper vapor chambers 34a and between the lower vapor chambers 34b is set between the upper vapor chambers 34a (lower vapor chambers 34b ) and the side vapor chambers 34c. The gap between the upper vapor chamber 34 a (lower vapor chamber 34 b ) and the side vapor chamber 34 d is large. Therefore, when the cleaning unit 50 supplies the cleaning gas G, the amount of the cleaning gas G supplied to the processing area 30a and the processing area 30b can be increased.

The cleaning gas G supplied to the inside of the chamber 10 is discharged to the outside of the chamber 10 through the opening 11 a of the chamber 10 . At this time, foreign substances such as sublimates and particles inside the chamber 10 are discharged to the outside of the chamber 10 along with the flow of the cleaning gas G. As shown in FIG. In addition, the heater 32a, the holder 32b, the soaking part 34, and the soaking plate support part 35 rub against each other due to thermal expansion. As these components rub against each other, tiny metal flakes are produced. The metal flakes are also included in the foreign matter. In addition, if an airflow is formed inside the chamber 10, the components (solids) of the sublimation adhering to the inner wall of the chamber 10 or elements installed inside the chamber 10 can be stripped and discharged into the chamber. The exterior of chamber 10.

In this case, the cleaning gas G may be supplied to the inside of the chamber 10 periodically or as needed. That is, a cleaning step may be provided separately from the step of processing the workpiece 100 , and the cleaning gas G may be supplied to the inside of the chamber 10 in the cleaning step.

In addition, the cleaning gas G may be supplied to the inside of the chamber 10 until the processed workpiece 100 is carried out from the chamber 10 and the workpiece 100 to be processed next is carried into the chamber 10 . That is, even in a series of steps of processing the workpiece 100 , the cleaning unit 50 can be used for cleaning when there is no workpiece 100 inside the chamber 10 .

If the cleaning unit 50 is provided, the sublimates and foreign matter such as particles inside the chamber 10 can be discharged to the outside of the chamber 10 along with the flow of the cleaning gas G. In addition, the components (solids) of the sublimation adhering to the inner wall of the chamber 10 and the like can be peeled off and discharged to the outside of the chamber 10 . That is, if the cleaning unit 50 is provided, it is possible to sufficiently remove foreign substances inside the chamber 10 .

Next, the effect of the cleaning unit 50 will be further described. FIG. 4 is a graph when the discharge of particles by the exhaust unit 20 and the discharge of particles by the cleaning unit 50 are combined. When discharging the particles by the exhaust unit 20 , the operation of depressurizing the inside of the chamber 10 and returning the decompressed inside of the chamber 10 to atmospheric pressure was repeated 10 times. When the particles are discharged by the cleaning unit 50 , the cleaning gas G is simultaneously supplied from the plurality of nozzles 41 after the particles are discharged by the exhaust unit 20 . That is, the particles are discharged from the exhaust unit 20 before the particles are discharged from the cleaning unit 50 .

As can be seen from FIG. 4 , particles of various sizes can be discharged if the discharge of the particles by the exhaust unit 20 and the discharge of the particles by the cleaning unit 50 are possible.

FIG. 5 is a graph when only particles are discharged by the cleaning unit 50 . When discharging the particles by the cleaning unit 50 , the cleaning gas G is simultaneously supplied from the plurality of nozzles 41 . As can be seen from FIG. 5 , particles of various sizes can be discharged even if only particles are discharged by the cleaning unit 50 .

Here, a comparison between FIG. 4 and FIG. 5 is performed. As can be seen from the comparison of FIG. 4 and FIG. 5 , there is no significant difference in the number of discharged particles immediately after the particle discharge is started by the cleaning unit 50 regardless of whether the particle discharge by the exhaust unit 20 is performed or not. This means that it is difficult to sufficiently remove particles by the exhaust unit 20 . That is, if the chamber 10 is sealed and the cleaning of the chamber 10 is exhausted and the gas is supplied to the interior of the chamber 10, then even if foreign matter such as particles can be removed to some extent, the Foreign matter such as particles cannot be sufficiently removed. On the other hand, if the cleaning part 50 can be used for cleaning, it can be seen from FIG. 5 that the foreign matter inside the chamber 10 can be sufficiently removed.

Here, in FIG. 4 and FIG. 5 , the detected amounts of particles of various sizes are compared when the elapsed time from the start of particle discharge by the cleaning unit 50 is between 3 minutes and 5 minutes. From the comparison of FIG. 4 and FIG. 5 , it can be seen that the amount of detected particles in FIG. 4 is smaller when the elapsed time from the start of particle discharge by the cleaning unit 50 is between 3 minutes and 5 minutes. Therefore, the discharge time of the particles by the cleaning unit 50 can be shortened. That is, it is more preferable to perform the discharge of the particles by the exhaust unit 20 and the discharge of the particles by the cleaning unit 50 . However, if the exhaust unit 20 is used to discharge the particles while the workpiece 100 is in the chamber 10 , the particles may adhere to the surface of the workpiece 100 . It is preferable to perform the discharge of the particles by the exhaust unit 20 and the discharge of the particles by the cleaning unit 50 while the organic film forming apparatus 1 is on standby.

FIG. 6 is also a graph when only particles are discharged by the cleaning unit 50 . However, in the case of FIG. 6 , the cleaning gas G is sequentially supplied from the plurality of nozzles 41 . For example, the cleaning gas G is supplied from an arbitrary plurality of nozzles 41 at a predetermined time, and after the supply of the cleaning gas G from the plurality of nozzles 41 is stopped, the cleaning gas G is supplied from the other plurality of nozzles 41 at a predetermined time. In this case, the cleaning gas G may be supplied sequentially from a plurality of nozzles 41 disposed above, the cleaning gas G may be supplied sequentially from a plurality of nozzles 41 disposed below, or may be sequentially supplied from any plurality of nozzles 41 . Cleaning gas G is supplied. In addition, one nozzle 41 used when supplying the cleaning gas G may be used.

From FIG. 6 , it can be seen that the detected amount of particles decreased during the elapsed time of 3 minutes from the start of particle discharge by the cleaning unit 50 . However, when the elapsed time from the start of particle discharge by the cleaning unit 50 was 4 minutes, the detected amount of particles increased. The reason for this is considered to be that the flow of the cleaning gas G in the chamber 10 is changed by changing the supply of the cleaning gas from the plurality of nozzles 41 to the other plurality of nozzles 41 . It is considered that the change in the flow of the cleaning gas G in the chamber 10 causes particles that could not be discharged by the previous flow of the cleaning gas G to be discharged to the outside of the chamber 10 .

Therefore, as can be seen from the comparison of FIG. 5 and FIG. 6 , if the cleaning gas G is sequentially supplied from the plurality of nozzles 41 to the other plurality of nozzles 41 , the number of discharged particles can be greatly increased. This means that foreign matter inside the chamber 10 can be removed more effectively.

Fig. 7 is a schematic cross-sectional view illustrating a cleaning unit 50a according to another embodiment. The cleaning unit 50 a includes, for example, a plurality of nozzles 41 , a gas source 52 , and a gas control unit 53 , similarly to the cleaning unit 50 described above. Moreover, as shown in FIG. 6, the cleaning part 50a may further have the detection part 56. As shown in FIG.

The detection unit 56 may be provided at a position facing the opening 11 a of the chamber 10 . The detection unit 56 detects foreign matter such as particles contained in the cleaning gas G discharged from the opening 11 a of the chamber 10 . The detection unit 56 can be, for example, a particle counter or the like.

If the detection part 56 is provided, the end point of cleaning can be detected. For example, when the number of foreign objects detected by the detection unit 56 is equal to or less than a predetermined value, the controller 60 controls the gas control unit 53 to stop the supply of the cleaning gas G and end the cleaning operation. If the end of cleaning can be detected, the consumption of cleaning gas G can be reduced compared to the case where cleaning is ended by time management or the like. In addition, foreign matter present inside the chamber 10 can be removed more appropriately.

FIG. 8 is a schematic cross-sectional view illustrating a cleaning unit 50b according to another embodiment. The cleaning part 50b has the several nozzle 41, the gas source 52, and the gas control part 53 similarly to the cleaning part 50 mentioned above, for example. Moreover, as shown in FIG. 8, the cleaning part 50b may have the detection part 56 and the frame body 55 further.

The frame body 55 has an airtight structure, and can be installed at a position facing the opening 11 a of the chamber 10 . The detection unit 56 may be disposed inside the frame body 55 . The housing 55 can be set as a mini-environment (local clean environment), for example.

As described above, foreign substances such as particles are contained in the cleaning gas G discharged from the chamber 10 . Therefore, foreign matter discharged from the chamber 10 may diffuse into the gas environment in which the organic film forming apparatus 1 is installed. If the diffused foreign matter such as particles reaches devices or elements around the organic film forming device 1 , contamination or failure may occur. In addition, it may be unfavorable that the operator inhales foreign matter such as particles or the cleaning gas G.

If the frame body 55 is provided, it is possible to suppress the diffusion of the foreign matter or the cleaning gas G discharged from the chamber 10 into the gas environment in which the organic film forming apparatus 1 is installed.

FIG. 9 is a schematic perspective view illustrating an organic film forming apparatus 1a of another embodiment. Like the cleaning unit 50 described above, the cleaning unit 150 has, for example, a plurality of nozzles 41 , a gas source 52 , and a gas control unit 53 . In addition, as shown in FIG. 9, the cleaning part 150 may further have another cleaning part 50c.

The cleaning unit 50 c has a nozzle 51 , a gas source 52 , and a gas control unit 53 . As shown in FIG. 9 , the nozzle 51 may be attached to the side of the chamber 10 . A plurality of nozzles 51 may be provided on the side of the chamber 10 . The nozzle 51 of this embodiment has a cylindrical shape with a closed tip. The closed front end of the nozzle 51 extends to the side of the chamber 10 opposite to the side of the chamber 10 on which the nozzle 51 is arranged. A plurality of nozzle holes 51 a are provided on a side surface of the nozzle 51 . In addition, the number and arrangement of the nozzles 51 can be changed as appropriate. For example, a plurality of nozzles 51 may be arranged along the Y direction on the side surface of the chamber 10 . Nozzles 51 may also be provided on both sides of the chamber 10 facing each other. The nozzle 51 may be provided to penetrate both of the opposing side surfaces of the chamber 10 . A plurality of nozzles 51 may be arranged on the cover 15 along the X direction.

FIG. 10 is a schematic cross-sectional view illustrating a cleaning unit 150 according to another embodiment. As shown in FIG. 10 , the cleaning gas G can be introduced into the chamber 10 from the nozzle hole 51 a of the nozzle 51 . By providing the cleaning part 50c, the flow of the cleaning gas G formed by the nozzle 41 can be strengthened. Alternatively, a flow different from that of the cleaning gas G formed by the nozzle 41 may be generated. Therefore, particles that cannot be discharged by the flow of the cleaning gas G formed by the nozzle 41 are discharged to the outside of the chamber 10 . Therefore, the number of discharged particles can be greatly increased. This means that foreign matter inside the chamber 10 can be removed more effectively.

In addition, in the cooling step, cooling gas may be supplied into the chamber from the cleaning unit 50c. If the supply timing of the cooling gas is set immediately after the organic film is formed or in the middle of returning the internal pressure of the chamber 10 to the atmospheric pressure, the cooling time and the time to return to the atmospheric pressure can be overlapped. That is, substantial reduction in cooling time can be achieved. In addition, sublimates adhere to the inner wall of the chamber 10 . Therefore, in order to prevent sublimates from peeling off from the inner wall of the chamber 10 and flowing into the processing regions 30 a and 30 b, the supply amount of the cooling gas from the cleaning unit 50 c is preferably higher than the supply amount of the cooling gas from the cooling unit 40 . few.

In addition, in the present embodiment, a plurality of nozzle holes are provided in one nozzle 51, but it is not limited thereto. For example, one nozzle hole may be formed in one nozzle 51 . In this case, the nozzle 51 has a cylindrical shape with a flange provided at the opened tip. Also, the nozzle 51 is airtightly connected to the hole on the side of the chamber 10 . That is, the hole on the side surface of the chamber 10 can function as the nozzle hole 51a. Alternatively, when the nozzle 51 is airtightly connected to the hole provided in the cover 15 , the hole provided in the cover 15 may also function as the nozzle hole 51 a.

FIG. 11 is a schematic perspective view illustrating an organic film forming apparatus 1b according to another embodiment. Like the cleaning unit 150 described above, the cleaning unit 250 includes, for example, a plurality of nozzles 41 , a gas source 52 , a cleaning unit 50 c , and a gas control unit 53 . In addition, as shown in FIG. 11 , the cleaning part 250 may also have another cooling part 140 .

The cooling unit 140 supplies cooling gas to the workpiece 100 in the processing area 30a and the processing area 30b. That is, the cooling unit 140 directly cools the workpiece 100 in a high-temperature state. The cooling unit 140 is different from the cooling unit 40 in that a nozzle 141 is provided instead of the nozzle 41 .

At least one nozzle 141 may be provided inside the processing area 30a and the processing area 30b (see FIG. 12 ). The nozzle 141 passes through the cover 15 and the cover 36, for example, and can be attached to the side vapor chamber 34d, the frame 31, or the like. In the present embodiment, the nozzle 141 is installed at a position where cooling gas can be supplied to the back surface of the workpiece 100 . In addition, a plurality of nozzles 141 may be provided in the X direction. Alternatively, the nozzle 141 may be formed in a cylindrical shape with a closed end. Furthermore, a plurality of holes may be provided on the side of the nozzle 141 and inserted from the side of the chamber 10 .

In the cooling step, cooling gas is jetted from the nozzle 141 in parallel to the workpiece 100 . In addition, in FIG. 12 , the door 13 is in an open state, but in the cooling step described next, the door 13 is in a closed state. The cooling gas is supplied from the nozzle 141 substantially parallel to the back surface of the workpiece 100 (ie, the surface supported by the support portion 33 ). As a result, the gap between the workpiece 100 and the support portion 33 is filled with cooling gas, so that the workpiece 100 can be directly cooled. In addition, the cooling gas supplied from the nozzle 141 and passed through the back surface of the workpiece 100 is discharged out of the chamber 10 through a discharge port (not shown). A plurality of discharge ports (for example, four) are provided on the ceiling portion of the chamber 10 . When the cooling gas is supplied to the chamber 10 in the cooling process, the heat in the chamber 10 moves to the upper side of the chamber 10, so the heat can be efficiently discharged through the discharge port provided in the ceiling portion. Furthermore, by sequentially supplying the cooling gas from the nozzles 141 located on the lower side in the chamber 10 among the plurality of nozzles 141 , an air flow toward the ceiling side of the chamber 10 is formed in the chamber 10 . Thereby, the particles in the chamber 10 can be efficiently discharged from the discharge port.

Here, when the cooling process is started, the internal pressure of the chamber 10 , which is lower than the atmospheric pressure, gradually approaches the atmospheric pressure by supplying the cooling gas. At this time, if the internal pressure of the chamber 10 suddenly approaches the atmospheric pressure, the workpiece 100 supported by the support portion 33 moves due to the pressure fluctuation, and rubs against the support portion 33 to generate particles. Therefore, first, after the start of the cooling step, only the cooling gas is supplied from the nozzle 41 until the internal pressure of the chamber 10 reaches a predetermined pressure, thereby indirectly cooling the workpiece 100 . The cooling gas supplied from the nozzle 41 is not directly supplied to the workpiece 100 but is supplied to the heat equalizing portion 34 . As a result, the internal pressure of the chamber 10 gradually rises while avoiding a sudden change in pressure near the workpiece 100 . Thereafter, after the internal pressure of the chamber 10 reaches a predetermined pressure, the cooling gas is also supplied from the nozzle 141 to directly cool the workpiece 100 . The predetermined pressure is a pressure at which the workpiece 100 does not move due to pressure fluctuations caused by the supply of cooling gas from the nozzle 141, and is determined in advance by experiments or the like. Since the cooling gas is supplied from the nozzle 141 after the internal pressure of the chamber 10 rises to some extent, the workpiece 100 does not move due to pressure fluctuations. Thus, generation of particles due to friction between the workpiece 100 and the support portion 33 can be effectively suppressed.

In addition, a plurality of nozzles (not shown) for blowing air from the bottom surface of the chamber 10 to the ceiling may be provided at the end portion of the chamber 10 on the opening 11 a side. In this way, since the airflow from the bottom of the chamber 10 to the ceiling can be formed, the particles blown away by the nozzles 141 and 41 can be efficiently transported to the discharge port and discharged. In addition, the airflow formed by the nozzle (not shown) also functions as an air curtain that prevents particles from entering from outside the chamber 10 when the door 13 is opened.

In addition, a plurality of nozzles (not shown) blowing air from the ceiling of the chamber 10 to the bottom surface may be provided. Furthermore, when used as an air curtain (when the door 13 is opened), an airflow from the ceiling of the chamber 10 to the bottom surface can be formed. In this case, an air curtain can be formed in which air flows in the same direction as the downflow in the clean room in which the organic film forming apparatus 1 is installed, and thus the intrusion of particles into the chamber 10 can be prevented more effectively.

In addition, an unillustrated nozzle for blowing air from the bottom surface of the chamber 10 to the ceiling may be provided not only on the side of the opening 11 a but also on the side of the cover 15 . The cooling gas ejected from the cooling nozzle 141 enters the door 13 side via the back surface of the workpiece 100 after being ejected, and the flow velocity is gradually decelerated. When the cooling gas collides with the gate 13 and collides with the lid 15 side, the flow velocity of the cooling gas becomes considerably slow, and the cooling gas tends to stagnate on the wall surface of the lid 15 side. Then, particles adhere to the wall surface on the side of the cover 15 , and the particles attached to the wall surface on the side of the cover 15 adhere to the workpiece to be processed next. By providing a nozzle that blows air from the bottom of the chamber 10 toward the ceiling along the wall surface on the side of the cover 15, particles adhering to the wall surface can be efficiently discharged from the discharge port.

When cooling the workpiece 100 indirectly and directly, cooling gas is supplied from the cooling unit 40 and the cooling unit 140 in the cooling step. That is, the workpiece 100 may be directly cooled using the nozzle 141 of the cooling unit 140 . Thereby, substantial shortening of cooling time can be achieved.

FIG. 12 is a schematic cross-sectional view illustrating a cleaning unit 250 according to another embodiment. By providing the cooling unit 140, the cleaning gas G can also be supplied from the nozzle 141 to the inside of the processing area 30a and the processing area 30b. Accordingly, the flow of the cleaning gas G formed by the nozzle 41 may be enhanced. Therefore, particles that cannot be discharged by the flow of the cleaning gas G formed by the nozzle 41 are discharged to the outside of the chamber 10 . Therefore, the number of discharged particles can be greatly increased. This means that foreign matter inside the chamber 10 can be removed more effectively.

As described above, the cleaning method of the organic film forming apparatus according to the present embodiment is a cleaning method of the organic film forming apparatus having the chamber 10 having the opening 11a through which the workpiece 100 is carried in or out, and capable of maintaining relatively large air pressure. Further decompressed gas environment. In the cleaning method of the organic film forming apparatus according to this embodiment, when the opening 11 a of the chamber 10 is opened, a flow of the cleaning gas G flowing toward the opening 11 a of the chamber 10 is formed inside the chamber 10 .

In addition, the flow of the cleaning gas G is formed by sequentially supplying the cleaning gas G from the plurality of nozzles 41 .

In addition, when the amount of foreign substances contained in the cleaning gas G discharged from the opening 11a of the chamber 10 is equal to or less than a predetermined value, the flow of the cleaning gas G is stopped. The workpiece 100 is not supported inside the chamber 10 when the flow of the cleaning gas G flowing toward the opening 11 a of the chamber 10 is formed.

In addition, the flow of the cleaning gas G formed by sequentially supplying the cleaning gas G from the plurality of nozzles 41 may also be enhanced by sequentially supplying the cleaning gas G from the plurality of nozzles 51 , or the plurality of nozzles 141 , or both. Alternatively, the flow of the cleaning gas G formed by sequentially supplying the cleaning gas G from the plurality of nozzles 41 may also be formed by sequentially supplying the cleaning gas G from the plurality of nozzles 51, or the plurality of nozzles 141, or both. different flows.

The embodiments have been illustrated above. However, the present invention is not limited to these descriptions. Embodiments obtained by appropriately adding design changes to the above-described embodiments by those skilled in the art are included in the scope of the present invention as long as they have the characteristics of the present invention. For example, the shape, size, arrangement, etc. of the organic film forming apparatus 1 are not limited to the examples, and can be changed as appropriate. In addition, each element contained in each embodiment described above can be combined as much as possible, and an embodiment obtained by combining these is included in the scope of the present invention as long as it has the characteristics of the present invention.

1, 1a, 1b: organic film forming device 10: chamber 11, 14: Flange 11a: opening 12: Sealing material 13: door (open and close the door) 15: cover 16, 40, 140: cooling part 17, 18: Exhaust port 20: exhaust part 21: The first exhaust part 21a, 22a: exhaust pump 21b: Pressure Control Department 22: The second exhaust part 22b: Pressure Control Department 23: The third exhaust part 24: cold trap 25: valve 30: Processing Department 30a, 30b: processing area 31: frame 32: heating part 32a: heater 32b: holder 33: support part 34: soaking part 34a: Upper vapor chamber 34b: lower vapor chamber 34c, 34d: side vapor chamber 35: Vapor support part 36: cover 40a: first gas supply path 40b: Second gas supply path 41, 51: nozzle 42, 52: gas source 43, 53: Gas Control Department 50, 50a, 50b, 50c, 150, 250: cleaning department 51a: nozzle hole 54: Switching valve 55: frame 56: Detection Department 60: Controller 100: Workpiece (substrate) 141: nozzle (cooling nozzle) G: clean gas X, Y, Z: directions

FIG. 1 is a schematic perspective view illustrating an organic film forming apparatus according to this embodiment. FIG. 2 is a graph illustrating a processing procedure of a workpiece. Fig. 3 is a schematic cross-sectional view for illustrating the function of the cleaning unit. Fig. 4 is a graph when the discharge of particles by the exhaust unit and the discharge of particles by the cleaning unit are combined. FIG. 5 is a graph when only particles are discharged by the cleaning unit. FIG. 6 is a graph when only particles are discharged by the cleaning unit. Fig. 7 is a schematic cross-sectional view illustrating a cleaning unit according to another embodiment. Fig. 8 is a schematic cross-sectional view illustrating a cleaning unit according to another embodiment. FIG. 9 is a schematic perspective view illustrating an organic film forming apparatus according to another embodiment. Fig. 10 is a schematic cross-sectional view for illustrating another embodiment of a cleaning unit. FIG. 11 is a schematic perspective view illustrating an organic film forming apparatus according to another embodiment. Fig. 12 is a schematic cross-sectional view illustrating a cleaning unit according to another embodiment.

10: chamber

11: Flange

11a: opening

13: door (open and close the door)

16: cooling department

20: exhaust part

32: heating part

36: cover

41: Nozzle

50: Cleaning Department

G: clean gas

X, Y, Z: direction

Claims (12)

An organic film forming device, comprising: The chamber has an opening for moving in or out the workpiece, and can maintain a gas environment with a relatively high pressure and further decompression; a door capable of opening and closing the opening of the chamber; an exhaust part, capable of exhausting the interior of the chamber; a support part, disposed inside the chamber, capable of supporting the workpiece; a heating part, disposed inside the chamber, capable of heating the workpiece; and At least one nozzle, arranged inside the chamber, is capable of supplying cleaning gas to the opening of the chamber. The organic film forming device according to claim 1, wherein, The nozzle is provided with multiple, The cleaning gas is sequentially supplied from the plurality of nozzles. The organic film forming device as described in Claim 1 or Claim 2, further comprising: a gas control unit, connected to the nozzle, capable of controlling the supply and stop of the supply of the cleaning gas; and a controller capable of controlling the gas control section, When the opening of the chamber is opened, the controller controls the gas control unit so that the cleaning gas flows from the nozzle to the opening of the chamber. The organic film forming device as described in Claim 1 or Claim 2, further comprising: a cooling unit that supplies cooling gas to the inside of the heating unit; a first cleaning part connected to the nozzle; a switching valve provided between the nozzle and the cleaning part; and controller, capable of controlling the switching valve, The cooling unit is connected to the switching valve, The controller can select whether to supply the cooling gas or the cleaning gas from the nozzle to the inside of the heating part by controlling the switching valve. The organic film forming device as described in Claim 4, further comprising: at least one second nozzle, disposed on the side of the chamber, capable of supplying cleaning gas into the chamber; and a second cleaning part connected to the second nozzle, The controller is capable of selecting supply of cleaning gas from the nozzle or the second nozzle or both. The organic film forming apparatus according to claim 4 or claim 5, further comprising a gas control unit, The gas control unit is connected to the nozzle and can control the supply and stop of the cleaning gas, the controller is capable of controlling the gas control section, When the opening of the chamber is opened, the controller controls the gas control unit so that the cleaning gas flows from the nozzle to the opening of the chamber. The organic film forming apparatus according to any one of claim 3 to claim 6, further comprising a detection section that detects foreign matter contained in the cleaning gas discharged from the opening of the chamber, The controller controls the gas control unit to stop supply of the cleaning gas when the number of the foreign matter detected by the detection unit is equal to or less than a predetermined value. The organic film forming apparatus according to any one of claim 1 to claim 7, further comprising a frame having an airtight structure and disposed at a position facing the opening of the chamber. A cleaning method for an organic film forming device, which is a cleaning method for an organic film forming device having a chamber, the chamber has an opening for loading or unloading workpieces, and can maintain a relatively high pressure and further decompressed gas environment, and the organic In the cleaning method of the film forming apparatus, When the opening of the chamber is opened, a flow of cleaning gas flowing toward the opening of the chamber is formed inside the chamber. The cleaning method of an organic film forming apparatus according to claim 9, wherein the flow of the cleaning gas is formed by sequentially supplying the cleaning gas from a plurality of nozzles. The method for cleaning an organic film forming device according to Claim 9 or Claim 10, wherein when the amount of foreign matter contained in the cleaning gas discharged from the opening of the chamber is equal to or less than a predetermined value, The formation of the flow of the cleaning gas is stopped. The method for cleaning an organic film forming device according to any one of claim 9 to claim 11, wherein the workpiece is not supported by the the interior of the chamber.

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