TW202335055A - Organic film formation device and cleaning method of the same - Google Patents
Organic film formation device and cleaning method of the same Download PDFInfo
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- 238000004140 cleaning Methods 0.000 title claims abstract description 177
- 238000000034 method Methods 0.000 title abstract description 50
- 230000015572 biosynthetic process Effects 0.000 title abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 65
- 239000007789 gas Substances 0.000 claims description 178
- 239000000112 cooling gas Substances 0.000 claims description 50
- 238000001816 cooling Methods 0.000 claims description 47
- 238000001514 detection method Methods 0.000 claims description 15
- 230000006837 decompression Effects 0.000 claims 2
- 238000012545 processing Methods 0.000 description 86
- 239000002245 particle Substances 0.000 description 69
- 239000000463 material Substances 0.000 description 18
- 239000007787 solid Substances 0.000 description 13
- 230000006870 function Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000000859 sublimation Methods 0.000 description 4
- 230000008022 sublimation Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000181 anti-adherent effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000003570 air Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Cleaning In General (AREA)
- Drying Of Solid Materials (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
本發明的實施方式涉及一種有機膜形成裝置、及有機膜形成裝置的清潔方法。Embodiments of the present invention relate to an organic film forming device and a cleaning method of the organic film forming device.
有機膜形成裝置例如包括能夠維持較大氣壓進一步經減壓的氣體環境的腔室、以及設置於腔室的內部並將工件加熱的加熱器。此種有機膜形成裝置藉由在較大氣壓進一步經減壓的氣體環境下將塗布了包含有機材料與溶媒的溶液的基板加熱,並使溶液中所含的溶媒蒸發,而形成有機膜。(例如,參照專利文獻1) 此處,在將溶液加熱時,溶液中所含的物質有時會昇華(氣化)。昇華物中所含的成分有時會成為固體而附著於溫度比經加熱的工件低的腔室的內壁等。附著於腔室的內壁等的固體若從腔室的內壁等剝落,則有成為粒子等異物而附著於工件的表面之虞。 The organic film forming apparatus includes, for example, a chamber capable of maintaining a gas environment in which a relatively high pressure is further reduced, and a heater installed inside the chamber to heat the workpiece. This type of organic film forming device forms an organic film by heating a substrate coated with a solution containing an organic material and a solvent in a gas environment in which the pressure is relatively high and further decompressed, and evaporates the solvent contained in the solution. (For example, refer to Patent Document 1) Here, when the solution is heated, substances contained in the solution may sublime (vaporize). The components contained in the sublimation product may become solid and adhere to the inner wall of a chamber whose temperature is lower than that of the heated workpiece. If the solid adhered to the inner wall of the chamber and the like peels off from the inner wall of the chamber, there is a risk that it may become foreign matter such as particles and adhere to the surface of the workpiece.
因此,定期地或者視需要進行將附著於腔室的內壁等的固體去除的清潔。例如,在半導體製造裝置等與有機膜形成裝置不同的技術領域中,提出了如下技術,即,藉由在將腔室密閉的狀態下依序執行腔室的內部的排氣與向腔室的內部供給清潔氣體,而將處於腔室的內部的異物排出。(參照專利文獻2) 但是最終發現,在有機膜形成裝置中,即便進行半導體製造裝置那樣的清潔(例如,在將腔室密閉的狀態下,依序執行腔室的內部的排氣與向腔室內部供給清潔氣體),也無法充分去除異物。 因此,期望開發出能夠充分去除處於腔室的內部的粒子等異物的有機膜形成裝置、及有機膜形成裝置的清潔方法。 [現有技術文獻] [專利文獻] Therefore, cleaning to remove solids adhered to the inner wall and the like of the chamber is performed regularly or as needed. For example, in a technical field different from an organic film forming apparatus, such as a semiconductor manufacturing apparatus, a technique has been proposed in which the exhaust inside the chamber and the exhaust into the chamber are sequentially performed while the chamber is sealed. Clean gas is supplied inside, and foreign matter inside the chamber is discharged. (Refer to patent document 2) However, it was finally discovered that in an organic film forming apparatus, even if cleaning is performed like a semiconductor manufacturing apparatus (for example, in a state where the chamber is sealed, exhaust of the inside of the chamber and supply of cleaning gas to the inside of the chamber are sequentially performed) , and foreign matter cannot be sufficiently removed. Therefore, it is desired to develop an organic film forming device that can sufficiently remove foreign matter such as particles inside the chamber, and a cleaning method of the organic film forming device. [Prior art documents] [Patent Document]
[專利文獻1]日本專利特開2019-184229號公報 [專利文獻2]日本專利特開2002-184708號公報 [Patent Document 1] Japanese Patent Application Laid-Open No. 2019-184229 [Patent Document 2] Japanese Patent Application Laid-Open No. 2002-184708
[發明所欲解決之課題][Problem to be solved by the invention]
本發明所要解決的問題在於提供一種能夠充分去除處於腔室的內部的異物的有機膜形成裝置、及有機膜形成裝置的清潔方法。 [解決課題之手段] The problem to be solved by the present invention is to provide an organic film forming device that can sufficiently remove foreign matter inside a chamber, and a cleaning method of the organic film forming device. [Means to solve the problem]
實施方式的有機膜形成裝置包括:腔室,具有搬入或搬出工件的開口,能夠維持較大氣壓進一步經減壓的氣體環境;門,能夠使所述腔室的開口開閉;排氣部,能夠對所述腔室內部進行排氣;支撐部,設置於所述腔室的內部,能夠支撐所述工件;加熱部,設置於所述腔室的內部,能夠將所述工件加熱;以及至少一個噴嘴,設置於所述腔室的內部,能夠向所述腔室的開口供給清潔氣體。 [發明的效果] The organic film forming apparatus of the embodiment includes: a chamber having an opening for loading or unloading workpieces, and capable of maintaining a gas environment in which a large air pressure is further reduced; a door capable of opening and closing the opening of the chamber; and an exhaust unit capable of opening and closing the chamber. Exhaust is carried out inside the chamber; a support part is provided inside the chamber and can support the workpiece; a heating part is provided inside the chamber and can heat the workpiece; and at least one nozzle , disposed inside the chamber, capable of supplying cleaning gas to the opening of the chamber. [Effects of the invention]
根據本發明的實施方式,提供一種能夠充分去除處於腔室的內部的異物的有機膜形成裝置、及有機膜形成裝置的清潔方法。According to an embodiment of the present invention, an organic film forming device capable of sufficiently removing foreign matter present inside a chamber and a cleaning method of the organic film forming device are provided.
以下,參照附圖對實施方式進行例示。此外,各圖式中,對相同的構成元件標注相同的符號並適宜省略詳細的說明。Hereinafter, embodiments are illustrated with reference to the drawings. In addition, in each drawing, the same structural element is attached|subjected with the same code|symbol, and detailed description is abbreviate|omitted suitably.
圖1是用於例示本實施方式的有機膜形成裝置1的示意立體圖。 此外,圖1中的X方向、Y方向、及Z方向表示相互正交的三個方向。本說明書中的上下方向可設為Z方向。 FIG. 1 is a schematic perspective view illustrating the organic film forming apparatus 1 according to this embodiment. In addition, the X direction, the Y direction, and the Z direction in FIG. 1 represent three directions that are orthogonal to each other. The up and down directions in this manual can be set as the Z direction.
形成有機膜前的工件100具有基板、以及塗布於基板的上表面的溶液。 基板例如可設為玻璃基板或半導體晶片等。但是,基板並不限定於例示。 溶液例如包含有機材料與溶劑。有機材料只要能夠由溶劑溶解,則並無特別限定。溶液例如可設為包含聚醯胺酸的清漆等。但是,溶液並不限定於例示。 The workpiece 100 before the organic film is formed has a substrate and a solution applied to the upper surface of the substrate. The substrate can be, for example, a glass substrate or a semiconductor wafer. However, the substrate is not limited to the examples. Solutions include, for example, organic materials and solvents. The organic material is not particularly limited as long as it can be dissolved in the solvent. The solution may be, for example, a varnish containing polyamide or the like. However, the solution is not limited to the examples.
如圖1所示,在有機膜形成裝置1,例如設置有腔室10、排氣部20、處理部30、冷卻部40、清潔部50、以及控制器60。As shown in FIG. 1 , the organic film forming apparatus 1 is provided with, for example, a chamber 10 , an exhaust unit 20 , a processing unit 30 , a cooling unit 40 , a cleaning unit 50 , and a controller 60 .
控制器60例如包括中央處理器(Central Processing Unit,CPU)等運算部以及記憶體等存儲部。控制器60例如可設為電腦等。控制器60基於存儲部中所保存的控制程式,控制設置于有機膜形成裝置1的各元件的動作。The controller 60 includes, for example, a computing unit such as a central processing unit (CPU) and a storage unit such as a memory. The controller 60 may be a computer, for example. The controller 60 controls the operation of each element provided in the organic film forming apparatus 1 based on the control program stored in the storage unit.
腔室10具有能夠維持較大氣壓進一步經減壓的氣體環境的氣密結構。腔室10呈箱狀。腔室10的外觀形狀並無特別限定。腔室10的外觀形狀例如可設為長方體。腔室10例如可由不銹鋼等金屬形成。The chamber 10 has an airtight structure capable of maintaining a gas environment in which a larger air pressure is further decompressed. The chamber 10 is box-shaped. The external shape of the chamber 10 is not particularly limited. The external shape of the chamber 10 may be, for example, a rectangular parallelepiped. The chamber 10 may be formed of metal such as stainless steel.
在Y方向上,在腔室10的其中一個端部,可設置凸緣11。在凸緣11,可設置O形環等密封材12。腔室10的設置有凸緣11的一側的開口11a能夠藉由門13開閉。藉由未圖示的驅動裝置,門13被推壓至凸緣11(密封材12),由此腔室10的開口11a以成為氣密的方式閉鎖。藉由未圖示的驅動裝置,門13遠離凸緣11,由此將腔室10的開口11a開放,從而能夠經由開口11a搬入或搬出工件100。另外,藉由將腔室10的開口11a開放,能夠利用後述的清潔部50進行清潔。 即,腔室10具有搬入或搬出工件100的開口11a,且能夠維持較大氣壓進一步經減壓的氣體環境。門13能夠使腔室10的開口11a開閉。 In the Y direction, at one of the ends of the chamber 10, a flange 11 may be provided. The flange 11 may be provided with a sealing material 12 such as an O-ring. The opening 11 a on the side of the chamber 10 on which the flange 11 is provided can be opened and closed by the door 13 . The door 13 is pushed to the flange 11 (sealing material 12) by a driving device (not shown), whereby the opening 11a of the chamber 10 is airtightly closed. The door 13 is moved away from the flange 11 by a driving device (not shown), thereby opening the opening 11 a of the chamber 10 , so that the workpiece 100 can be loaded in or out through the opening 11 a. Moreover, by opening the opening 11a of the chamber 10, cleaning can be performed by the cleaning part 50 mentioned later. That is, the chamber 10 has the opening 11a for loading or unloading the workpiece 100, and can maintain a gas environment in which the pressure is relatively high and the pressure is further reduced. The door 13 can open and close the opening 11a of the chamber 10.
在Y方向上,在腔室10的另一個端部,可設置凸緣14。在凸緣14,可設置O形環等密封材12。腔室10的設置有凸緣14的一側的開口能夠藉由蓋15開閉。例如,蓋15可使用螺杆等緊固構件能夠裝卸地設置於凸緣14。在進行維護等時,藉由卸下蓋15,使腔室10的設置有凸緣14的一側的開口露出。In the Y direction, at the other end of the chamber 10, a flange 14 may be provided. The flange 14 may be provided with a sealing material 12 such as an O-ring. The opening on the side of the chamber 10 on which the flange 14 is provided can be opened and closed by the cover 15 . For example, the cover 15 may be detachably provided on the flange 14 using a fastening member such as a screw. When performing maintenance or the like, the cover 15 is removed to expose the opening on the side of the chamber 10 on which the flange 14 is provided.
在腔室10的外壁、及門13的外表面,可設置冷卻部16。冷卻部16連接有未圖示的冷卻水供給部。冷卻部16例如可設為水套(Water Jacket)。若設置有冷卻部16,則可抑制腔室10的外壁的溫度、或門13的外表面的溫度比規定的溫度高。A cooling part 16 may be provided on the outer wall of the chamber 10 and the outer surface of the door 13 . A cooling water supply unit (not shown) is connected to the cooling unit 16 . The cooling unit 16 may be a water jacket, for example. If the cooling unit 16 is provided, the temperature of the outer wall of the chamber 10 or the temperature of the outer surface of the door 13 can be suppressed from being higher than a predetermined temperature.
排氣部20對腔室10的內部進行排氣。排氣部20例如具有第一排氣部21、第二排氣部22、及第三排氣部23。 第一排氣部21例如連接於排氣口17,所述排氣口17設置於腔室10的底面。 第一排氣部21例如具有排氣泵21a以及壓力控制部21b。 排氣泵21a可設為從大氣壓進行粗抽排氣至規定壓力的排氣泵。因此,排氣泵21a相較於後述的排氣泵22a而排氣量更多。排氣泵21a例如可設為乾式真空泵等。 The exhaust unit 20 exhausts the inside of the chamber 10 . The exhaust part 20 has, for example, a first exhaust part 21, a second exhaust part 22, and a third exhaust part 23. The first exhaust part 21 is connected to the exhaust port 17 , for example, and the exhaust port 17 is provided on the bottom surface of the chamber 10 . The first exhaust part 21 has, for example, an exhaust pump 21a and a pressure control part 21b. The exhaust pump 21a may be an exhaust pump that performs rough exhaust from atmospheric pressure to a predetermined pressure. Therefore, the exhaust pump 21a has a larger exhaust volume than the exhaust pump 22a described later. The exhaust pump 21a may be a dry vacuum pump or the like, for example.
壓力控制部21b例如設置於排氣口17與排氣泵21a之間。壓力控制部21b基於檢測腔室10的內壓的、未圖示的真空計等的輸出,以腔室10的內壓成為規定壓力的方式進行控制。壓力控制部21b例如可設為自動壓力控制器(Auto Pressure Controller,APC)等。The pressure control unit 21b is provided, for example, between the exhaust port 17 and the exhaust pump 21a. The pressure control unit 21 b controls the internal pressure of the chamber 10 so that it becomes a predetermined pressure based on the output of a vacuum gauge (not shown) or the like that detects the internal pressure of the chamber 10 . The pressure control unit 21b may be, for example, an automatic pressure controller (Auto Pressure Controller, APC) or the like.
此外,在排氣口17與壓力控制部21b之間,設置有用於捕獲所排出的昇華物的冷阱24。另外,在排氣口17與冷阱24之間設置有閥25。閥25在後述的冷卻工序中發揮防止流體流入至冷阱24的作用。Furthermore, a cold trap 24 for capturing the discharged sublimation material is provided between the exhaust port 17 and the pressure control part 21b. In addition, a valve 25 is provided between the exhaust port 17 and the cold trap 24 . The valve 25 plays a role in preventing fluid from flowing into the cold trap 24 in the cooling process described below.
第二排氣部22例如連接於排氣口18,所述排氣口18設置於腔室10的底面。 第二排氣部22例如具有排氣泵22a以及壓力控制部22b。 排氣泵22a在利用排氣泵21a進行粗抽排氣之後,進行排氣至更低的規定壓力。排氣泵22a例如具有能夠排氣至高真空的分子流區域為止的排氣能力。例如,排氣泵22a可設為渦輪分子泵(Turbo Molecular Pump,TMP)等。 The second exhaust part 22 is connected to the exhaust port 18 , for example, and the exhaust port 18 is provided on the bottom surface of the chamber 10 . The second exhaust unit 22 includes, for example, an exhaust pump 22a and a pressure control unit 22b. The exhaust pump 22a performs rough exhaust by the exhaust pump 21a, and then exhausts the air to a lower predetermined pressure. The exhaust pump 22a has an exhaust capability capable of exhausting air to a high vacuum molecular flow region, for example. For example, the exhaust pump 22a may be a turbo molecular pump (Turbo Molecular Pump, TMP) or the like.
壓力控制部22b例如設置於排氣口18與排氣泵22a之間。壓力控制部22b基於檢測腔室10的內壓的、未圖示的真空計等的輸出,以腔室10的內壓成為規定壓力的方式進行控制。壓力控制部22b例如可設為APC等。此外,與第一排氣部21同樣地,可在排氣口18與壓力控制部21b之間設置冷阱24及閥25。The pressure control unit 22b is provided, for example, between the exhaust port 18 and the exhaust pump 22a. The pressure control unit 22 b controls the internal pressure of the chamber 10 so that it becomes a predetermined pressure based on the output of a vacuum gauge (not shown) or the like that detects the internal pressure of the chamber 10 . The pressure control unit 22b can be, for example, an APC or the like. In addition, similarly to the first exhaust part 21, a cold trap 24 and a valve 25 may be provided between the exhaust port 18 and the pressure control part 21b.
此外,以上例示了排氣口17及排氣口18設置於腔室10的底面的情況,但排氣口17及排氣口18例如也可設置於腔室10的頂棚面。若排氣口17及排氣口18設置於腔室10的底面或頂棚面,則可在腔室10的內部形成向腔室10的底面或頂棚面的氣流。In addition, the above example illustrates the case where the exhaust port 17 and the exhaust port 18 are provided on the bottom surface of the chamber 10 , but the exhaust port 17 and the exhaust port 18 may also be provided on the ceiling surface of the chamber 10 , for example. If the exhaust port 17 and the exhaust port 18 are provided on the bottom surface or the ceiling surface of the chamber 10 , an airflow can be formed inside the chamber 10 toward the bottom surface or the ceiling surface of the chamber 10 .
此處,在將塗布有包含有機材料與溶媒的溶液的工件100加熱時,溶液中所含的物質有時會昇華(氣化)。昇華物中所含的成分有時會成為固體而附著於溫度比經加熱的工件100低的腔室10的內壁等。附著於腔室10的內壁等的固體若從腔室10的內壁等剝落,則有成為粒子等異物而附著於工件100的表面之虞。Here, when the workpiece 100 coated with a solution containing an organic material and a solvent is heated, substances contained in the solution may sublime (vaporize). The components contained in the sublimated product may become solid and adhere to the inner wall of the chamber 10 or the like whose temperature is lower than that of the heated workpiece 100 . If the solid adhered to the inner wall of the chamber 10 and the like peels off from the inner wall of the chamber 10 , it may become foreign matter such as particles and adhere to the surface of the workpiece 100 .
在此情況下,若在腔室10的內部形成向腔室10的底面或頂棚面的氣流,則容易將昇華物或粒子等異物隨著氣流而排出至腔室10的外部。因此,可抑制粒子等異物附著於工件100。In this case, if an airflow is formed inside the chamber 10 toward the bottom surface or the ceiling surface of the chamber 10 , foreign matter such as sublimated matter or particles will be easily discharged to the outside of the chamber 10 along with the airflow. Therefore, foreign matter such as particles can be suppressed from adhering to the workpiece 100 .
處理部30例如具有:框架31、加熱部32、支撐部33、均熱部34、均熱板支撐部35、及罩36。 在處理部30的內部,設置有處理區域30a及處理區域30b。處理區域30a、處理區域30b成為對工件100實施處理的空間。工件100支撐於處理區域30a、處理區域30b的內部。處理區域30b設置於處理區域30a的上方。此外,例示了設置兩個處理區域的情況,但並不限定於此。可僅設置一個處理區域,也可設置三個以上的處理區域。在本實施方式中,作為一例,例示設置兩個處理區域的情況,但在設置一個處理區域、及三個以上的處理區域的情況下,也可同樣地考慮。 The processing part 30 has, for example, a frame 31, a heating part 32, a support part 33, a uniform heat part 34, a uniform heat plate support part 35, and a cover 36. Inside the processing unit 30, a processing area 30a and a processing area 30b are provided. The processing areas 30a and 30b serve as spaces for processing the workpiece 100. The workpiece 100 is supported inside the processing areas 30a and 30b. The processing area 30b is provided above the processing area 30a. In addition, the case where two processing areas are provided is exemplified, but the invention is not limited to this. Only one processing area can be set, or three or more processing areas can be set. In this embodiment, the case where two processing areas are provided is illustrated as an example, but the same can be considered when one processing area or three or more processing areas are provided.
處理區域30a、處理區域30b設置於加熱部32與加熱部32之間。處理區域30a、處理區域30b由均熱部34(上部均熱板34a、下部均熱板34b、側部均熱板34c、側部均熱板34d)包圍。The processing area 30a and the processing area 30b are provided between the heating part 32 and the heating part 32. The processing area 30a and the processing area 30b are surrounded by the vapor chamber 34 (the upper vapor chamber 34a, the lower vapor chamber 34b, the side vapor chamber 34c, and the side vapor chamber 34d).
如後述,上部均熱板34a及下部均熱板34b是藉由多個板狀的構件由多個均熱板支撐部35支撐而形成。因此,處理區域30a與腔室10的內部的空間經由設置於上部均熱板34a彼此之間、及下部均熱板34b彼此之間等的間隙而相連。另外,在上部均熱板34a(下部均熱板34b)與側部均熱板34c之間、及上部均熱板34a(下部均熱板34b)與側部均熱板34d之間也形成有間隙。因此,若將腔室10的內壁與處理部30之間的空間的壓力減壓,則處理區域30a的內部的空間也減壓。處理區域30b為與處理區域30a相同的結構,因此省略說明。As will be described later, the upper vapor chamber 34 a and the lower vapor chamber 34 b are formed by a plurality of plate-shaped members supported by a plurality of vapor chamber support portions 35 . Therefore, the processing area 30a and the space inside the chamber 10 are connected through gaps provided between the upper vapor chambers 34a and between the lower vapor chambers 34b. In addition, there are also formed between the upper vapor chamber 34a (lower vapor chamber 34b) and the side vapor chamber 34c, and between the upper vapor chamber 34a (lower vapor chamber 34b) and the side vapor chamber 34d. gap. Therefore, when the pressure of the space between the inner wall of the chamber 10 and the processing part 30 is reduced, the pressure of the space inside the processing area 30a is also reduced. The processing area 30b has the same structure as the processing area 30a, so the description is omitted.
若將腔室10的內壁與處理部30之間的空間的壓力減壓,則可抑制從處理區域30a、處理區域30b向外部釋放的熱。即,可提高加熱效率或蓄熱效率。因此,可使對後述的加熱器32a施加的電力降低。另外,若可使對加熱器32a施加的電力降低,則可抑制加熱器32a的溫度成為規定的溫度以上,因此可延長加熱器32a的壽命。If the pressure in the space between the inner wall of the chamber 10 and the processing unit 30 is reduced, the heat released from the processing areas 30 a and 30 b to the outside can be suppressed. That is, heating efficiency or thermal storage efficiency can be improved. Therefore, the electric power applied to the heater 32a mentioned later can be reduced. In addition, if the electric power applied to the heater 32a can be reduced, the temperature of the heater 32a can be suppressed from becoming a predetermined temperature or higher, and therefore the life of the heater 32a can be extended.
另外,由於蓄熱效率提高,因此可使處理區域30a、處理區域30b的溫度迅速地上升。因此,也能夠應對需要急劇的溫度上升的處理。另外,可抑制腔室10的外壁的溫度變高,因此可使冷卻部16簡易。In addition, since the thermal storage efficiency is improved, the temperatures of the processing areas 30a and 30b can be rapidly raised. Therefore, it is possible to cope with processes requiring rapid temperature rise. In addition, since the temperature of the outer wall of the chamber 10 can be suppressed from increasing, the cooling unit 16 can be simplified.
框架31具有包括細長的板材或型鋼等的骨架結構。框架31的外觀形狀可設為與腔室10的外觀形狀相同。框架31的外觀形狀例如可設為長方體。The frame 31 has a skeleton structure including an elongated plate material, shaped steel, or the like. The outer shape of the frame 31 may be the same as the outer shape of the chamber 10 . The external shape of the frame 31 may be, for example, a rectangular parallelepiped.
加熱部32設置有多個。加熱部32可設置於處理區域30a、處理區域30b的下部、及處理區域30a、處理區域30b的上部。設置於處理區域30a、處理區域30b的下部的加熱部32成為下部加熱部。設置於處理區域30a、處理區域30b的上部的加熱部32成為上部加熱部。下部加熱部與上部加熱部相向。此外,在沿上下方向重疊設置多個處理區域的情況下,設置於下側的處理區域的上部加熱部可兼用作設置於上側的處理區域的下部加熱部。A plurality of heating units 32 are provided. The heating unit 32 may be provided in the lower portions of the processing areas 30a and 30b, and in the upper portions of the processing areas 30a and 30b. The heating part 32 provided in the lower part of the processing area 30a and the processing area 30b becomes a lower heating part. The heating part 32 provided in the upper part of the processing area 30a and the processing area 30b becomes an upper heating part. The lower heating part faces the upper heating part. In addition, when a plurality of processing areas are overlapped in the vertical direction, the upper heating portion provided in the lower processing area can also serve as the lower heating portion provided in the upper processing area.
加熱部32設置於腔室10的內部,將工件100加熱。 例如,處理區域30a中經支撐的工件100的下表面(背面)由設置於處理區域30a的下部的加熱部32加熱。處理區域30a中經支撐的工件100的上表面(表面)由處理區域30a與處理區域30b兼用的加熱部32加熱。 The heating unit 32 is provided inside the chamber 10 and heats the workpiece 100 . For example, the lower surface (back surface) of the workpiece 100 supported in the processing area 30a is heated by the heating part 32 provided in the lower part of the processing area 30a. The upper surface (surface) of the workpiece 100 supported in the processing area 30a is heated by the heating part 32 that serves both the processing area 30a and the processing area 30b.
處理區域30b中經支撐的工件100的下表面(背面)由處理區域30a與處理區域30b兼用的加熱部32加熱。處理區域30b中經支撐的工件100的上表面(表面)由設置於處理區域30b的上部的加熱部32加熱。 若如此,則可減少加熱部32的個數,因此可實現消耗電力的降低、製造成本的降低、省空間化等。 The lower surface (back surface) of the workpiece 100 supported in the processing area 30b is heated by the heating unit 32 that serves both the processing area 30a and the processing area 30b. The upper surface (surface) of the workpiece 100 supported in the processing area 30b is heated by the heating part 32 provided in the upper part of the processing area 30b. In this case, the number of heating units 32 can be reduced, thereby achieving reduction in power consumption, reduction in manufacturing cost, space saving, and the like.
多個加熱部32分別具有至少一個加熱器32a以及一對固持器32b。此外,以下對設置多個加熱器32a的情況進行說明。 加熱器32a呈棒狀,在一對固持器32b之間沿Y方向延伸。多個加熱器32a可沿X方向排列設置。多個加熱器32a例如可等間隔地設置。加熱器32a例如可設為鎧裝式加熱器(sheathed heater)、遠紅外線加熱器、遠紅外線燈、陶瓷加熱器、筒式加熱器(cartridge heater)等。另外,也可由石英罩覆蓋各種加熱器。 Each of the plurality of heating units 32 has at least one heater 32a and a pair of holders 32b. In addition, a case where a plurality of heaters 32a are provided will be described below. The heater 32a has a rod shape and extends in the Y direction between the pair of holders 32b. The plurality of heaters 32a may be arranged in an array along the X direction. The plurality of heaters 32a may be provided at equal intervals, for example. The heater 32a can be, for example, a sheathed heater, a far-infrared heater, a far-infrared lamp, a ceramic heater, a cartridge heater, or the like. In addition, various heaters can also be covered with quartz covers.
此外,在本說明書中,也包括經石英蓋覆蓋的各種加熱器在內而稱為“棒狀的加熱器”。另外,“棒狀”的剖面形狀並無限定,例如也包括圓柱狀或棱柱狀等。 另外,加熱器32a並不限定於例示。加熱器32a只要可在較大氣壓進一步經減壓的氣體環境下將工件100加熱即可。即,加熱器32a只要利用由放射所得的熱能即可。 In addition, in this specification, various heaters covered with a quartz cover are also referred to as "rod-shaped heaters". In addition, the cross-sectional shape of the "rod-like" is not limited, and includes, for example, a cylindrical shape or a prism shape. In addition, the heater 32a is not limited to the example. The heater 32a only needs to be able to heat the workpiece 100 in a gas environment in which the pressure is relatively high and the pressure is further reduced. That is, the heater 32a only needs to utilize thermal energy obtained by radiation.
上部加熱部及下部加熱部中的多個加熱器32a的規格、個數、間隔等可根據要加熱的溶液的組成(溶液的加熱的溫度)、工件100的大小等而適宜決定。多個加熱器32a的規格、個數、間隔等可藉由進行模擬或實驗等而適宜決定。The specifications, number, intervals, etc. of the plurality of heaters 32 a in the upper heating part and the lower heating part can be appropriately determined depending on the composition of the solution to be heated (the temperature at which the solution is heated), the size of the workpiece 100 , and the like. The specifications, number, intervals, etc. of the plurality of heaters 32a can be appropriately determined by conducting simulations, experiments, or the like.
另外,設置有多個加熱器32a的空間由固持器32b、上部均熱板34a、下部均熱板34b、側部均熱板34c、及側部均熱板34d包圍。在上部均熱板34a彼此之間、下部均熱板34b彼此之間設置有間隙。因此,從後述的冷卻部40供給至設置有多個加熱器32a的空間的冷卻氣體的一部分流入至處理區域30a或者處理區域30b。但是,設置有多個加熱器32a的空間可看作大致閉鎖的空間。因此,藉由從冷卻部40向設置有多個加熱器32a的空間供給冷卻氣體,而可將多個加熱器32a、上部均熱板34a、下部均熱板34b、側部均熱板34c、及側部均熱板34d冷卻。In addition, the space in which the plurality of heaters 32a are installed is surrounded by the holder 32b, the upper vapor chamber 34a, the lower vapor chamber 34b, the side vapor chamber 34c, and the side vapor chamber 34d. A gap is provided between the upper vapor chambers 34a and between the lower vapor chambers 34b. Therefore, part of the cooling gas supplied from the cooling unit 40 to be described later to the space in which the plurality of heaters 32 a are installed flows into the processing area 30 a or the processing area 30 b. However, the space in which the plurality of heaters 32a are installed can be regarded as a substantially closed space. Therefore, by supplying cooling gas from the cooling unit 40 to the space where the plurality of heaters 32a are installed, the plurality of heaters 32a, the upper vapor chambers 34a, the lower vapor chambers 34b, the side vapor chambers 34c, and and side vapor chamber 34d for cooling.
一對固持器32b沿X方向(例如,處理區域30a、處理區域30b的長邊方向)延伸。一對固持器32b在Y方向相互相向。其中一個固持器32b固定於框架31的門13側的端面。另一個固持器32b固定於框架31的及門13側為相反側的端面。一對固持器32b例如可使用螺杆等緊固構件固定於框架31。一對固持器32b保持加熱器32a的端部附近的非放熱部。一對固持器32b例如可由細長的金屬板材或型鋼等形成。一對固持器32b的材料並無特別限定,優選為設為具有耐熱性與耐蝕性的材料。一對固持器32b的材料例如可設為不銹鋼等。The pair of holders 32b extends in the X direction (for example, the longitudinal direction of the treatment area 30a and the treatment area 30b). The pair of holders 32b face each other in the Y direction. One of the holders 32b is fixed to the end surface of the frame 31 on the door 13 side. The other holder 32b is fixed to the end surface of the frame 31 opposite to the door 13 side. The pair of holders 32b can be fixed to the frame 31 using fastening members such as screws. The pair of holders 32b holds the non-heat-radiating portion near the end portion of the heater 32a. The pair of holders 32b may be formed of, for example, an elongated metal plate or shaped steel. The material of the pair of holders 32b is not particularly limited, but it is preferably a material having heat resistance and corrosion resistance. The material of the pair of holders 32b can be, for example, stainless steel.
支撐部33設置於腔室10的內部,支撐工件100。例如,支撐部33在上部加熱部與下部加熱部之間支撐工件100。支撐部33可設置多個。多個支撐部33設置於處理區域30a的下部、及處理區域30b的下部。多個支撐部33可設為棒狀體。The support part 33 is provided inside the chamber 10 and supports the workpiece 100 . For example, the support portion 33 supports the workpiece 100 between the upper heating portion and the lower heating portion. A plurality of supporting parts 33 may be provided. The plurality of support parts 33 are provided at the lower part of the processing area 30a and the lower part of the processing area 30b. The plurality of supporting parts 33 may be formed into rod-shaped bodies.
多個支撐部33的其中一個端部(上方的端部)與工件100的下表面(背面)接觸。因此,多個支撐部33的其中一個端部的形狀優選為設為半球狀等。若多個支撐部33的其中一個端部的形狀為半球狀,則可抑制工件100的下表面產生損傷。另外,可減小工件100的下表面與多個支撐部33的接觸面積,因此可減少從工件100傳至多個支撐部33的熱。One end (upper end) of the plurality of support portions 33 is in contact with the lower surface (back surface) of the workpiece 100 . Therefore, it is preferable that the shape of one end portion of the plurality of support portions 33 is a hemispherical shape or the like. If the shape of one end portion of the plurality of support portions 33 is hemispherical, damage to the lower surface of the workpiece 100 can be suppressed. In addition, the contact area between the lower surface of the workpiece 100 and the plurality of support portions 33 can be reduced, so the heat transferred from the workpiece 100 to the plurality of support portions 33 can be reduced.
工件100在較大氣壓進一步經減壓的氣體環境下,由利用放射所得的熱能加熱,因此從上部加熱部至工件100的上表面為止的距離、及從下部加熱部至工件100的下表面為止的距離成為利用放射所得的熱能可到達工件100的距離。The workpiece 100 is heated by heat energy obtained by radiation in a gas environment in which the pressure is relatively high and further decompressed. Therefore, the distance from the upper heating part to the upper surface of the workpiece 100 and the distance from the lower heating part to the lower surface of the workpiece 100 The distance is the distance at which heat energy obtained by radiation can reach the workpiece 100 .
多個支撐部33的另一個端部(下方的端部)例如可固定於架設在一對框架31之間的多個棒狀構件或板狀構件等。在此情況下,多個支撐部33優選為能夠裝卸地設置於棒狀構件等。若如此,則維護等作業變得容易。The other end portion (the lower end portion) of the plurality of support portions 33 can be fixed to, for example, a plurality of rod-shaped members or plate-shaped members installed between the pair of frames 31 . In this case, it is preferable that the plurality of support portions 33 are detachably provided on a rod-shaped member or the like. If so, maintenance and other operations become easier.
多個支撐部33的個數、配置、間隔等可根據工件100的大小或剛性(撓曲)等而適宜變更。 多個支撐部33的材料並無特別限定,優選為設為具有耐熱性與耐蝕性的材料。多個支撐部33的材料例如可設為不銹鋼等。 The number, arrangement, intervals, etc. of the plurality of support portions 33 can be appropriately changed depending on the size, rigidity (flexion), etc. of the workpiece 100 . The material of the plurality of support portions 33 is not particularly limited, but is preferably a material having heat resistance and corrosion resistance. The material of the plurality of support portions 33 may be, for example, stainless steel.
均熱部34具有:多個上部均熱板34a、多個下部均熱板34b、多個側部均熱板34c、及多個側部均熱板34d。多個上部均熱板34a、多個下部均熱板34b、多個側部均熱板34c、及多個側部均熱板34d呈板狀。The heat equalizing part 34 has a plurality of upper equalizing plates 34a, a plurality of lower equalizing plates 34b, a plurality of side equalizing plates 34c, and a plurality of side equalizing plates 34d. The plurality of upper vapor chambers 34a, the plurality of lower vapor chambers 34b, the plurality of side vapor chambers 34c, and the plurality of side vapor chambers 34d are plate-shaped.
多個上部均熱板34a在上部加熱部中設置於下部加熱部側(工件100側)。多個上部均熱板34a與多個加熱器32a遠離地設置。即,在多個上部均熱板34a的上側表面與多個加熱器32a的下表面之間設置有間隙。多個上部均熱板34a沿X方向排列設置。在多個上部均熱板34a彼此之間設置有間隙。若設置有間隙,則可吸收由熱膨脹所致的尺寸差。因此,可抑制上部均熱板34a彼此干擾而發生變形。另外,如上文所述,可經由所述間隙將處理區域30a、處理區域30b的空間的壓力減壓。The plurality of upper vapor chambers 34 a are provided on the lower heating unit side (the workpiece 100 side) of the upper heating unit. The plurality of upper vapor chambers 34a are provided apart from the plurality of heaters 32a. That is, a gap is provided between the upper surfaces of the plurality of upper heat chamber plates 34a and the lower surfaces of the plurality of heaters 32a. The plurality of upper vapor chambers 34a are arranged in an array along the X direction. A gap is provided between the plurality of upper vapor chambers 34a. If gaps are provided, dimensional differences caused by thermal expansion can be absorbed. Therefore, it is possible to suppress the upper vapor chambers 34a from interfering with each other and causing deformation. In addition, as mentioned above, the pressure in the space of the processing area 30a and the processing area 30b can be reduced via the gap.
多個下部均熱板34b在下部加熱部中設置於上部加熱部側(工件100側)。多個下部均熱板34b與多個加熱器32a遠離地設置。即,在多個下部均熱板34b的下側表面與多個加熱器32a的上側表面之間設置有間隙。多個下部均熱板34b沿X方向排列設置。在多個下部均熱板34b彼此之間設置有間隙。若設置有間隙,則可吸收由熱膨脹所致的尺寸差。因此,可抑制下部均熱板34b彼此干擾而發生變形。另外,可經由所述間隙將處理區域30a、處理區域30b的空間的壓力減壓。The plurality of lower heating plates 34b are provided on the upper heating portion side (the workpiece 100 side) of the lower heating portion. The plurality of lower vapor chambers 34b are provided apart from the plurality of heaters 32a. That is, a gap is provided between the lower surfaces of the plurality of lower heat chamber plates 34b and the upper surfaces of the plurality of heaters 32a. The plurality of lower vapor chambers 34b are arranged in an array along the X direction. A gap is provided between the plurality of lower vapor chambers 34b. If gaps are provided, dimensional differences caused by thermal expansion can be absorbed. Therefore, it is possible to suppress the lower vapor chambers 34b from interfering with each other and causing deformation. In addition, the pressure in the space of the processing area 30a and the processing area 30b can be reduced via the gap.
側部均熱板34c在X方向分別設置於處理區域30a、處理區域30b的兩側的側部。側部均熱板34c可設置於罩36的內側。另外,如上文所述,側部均熱板34c與上部均熱板34a或者下部均熱板34b之間設置有間隙。可經由所述間隙將處理區域30a、處理區域30b的空間的壓力減壓。The side heat chambers 34c are respectively provided on both sides of the processing area 30a and the processing area 30b in the X direction. Side vapor chambers 34c may be disposed inside the cover 36 . In addition, as mentioned above, a gap is provided between the side vapor chamber 34c and the upper vapor chamber 34a or the lower vapor chamber 34b. The pressure in the space of the processing areas 30a and 30b can be reduced through the gap.
側部均熱板34d在Y方向分別設置於處理區域30a、處理區域30b的兩側的側部。設置於門13側的側部均熱板34d可與罩36空開間隔地設置於門13。設置于蓋15側的側部均熱板34d可設置於罩36的內側。另外,如上文所述,側部均熱板34d與上部均熱板34a或者下部均熱板34b之間設置有間隙。可經由所述間隙將處理區域30a、處理區域30b的空間的壓力減壓。The side heat chambers 34d are respectively provided on both sides of the processing area 30a and the processing area 30b in the Y direction. The side heat chamber 34d provided on the door 13 side may be provided on the door 13 with a space apart from the cover 36. The side heat chamber 34d provided on the cover 15 side may be provided inside the cover 36. In addition, as mentioned above, a gap is provided between the side vapor chamber 34d and the upper vapor chamber 34a or the lower vapor chamber 34b. The pressure in the space of the processing areas 30a and 30b can be reduced through the gap.
在本實施方式中,設置於上部均熱板34a彼此之間、及下部均熱板34b彼此之間等的間隙形成為比設置於上部均熱板34a(下部均熱板34b)與側部均熱板34c之間、及上部均熱板34a(下部均熱板34b)與側部均熱板34d之間的間隙大。其理由將後述。In this embodiment, the gaps provided between the upper vapor chambers 34a and the lower vapor chambers 34b are formed to be smaller than the gaps between the upper vapor chambers 34a (lower vapor chambers 34b) and the side portions. The gaps between the hot plates 34c and between the upper vapor chamber 34a (lower vapor chamber 34b) and the side vapor chambers 34d are large. The reason for this will be described later.
如上文所述,多個加熱器32a呈棒狀,空開規定的間隔地排列設置。在加熱器32a為棒狀的情況下,從加熱器32a的中心軸呈放射狀放射熱。在此情況下,加熱器32a的中心軸與經加熱的部分之間的距離越短,則經加熱的部分的溫度越高。因此,在以相對於多個加熱器32a相向的方式保持有工件100的情況下,位於加熱器32a的正上方或正下方的工件100的區域相較於位於多個加熱器32a彼此之間的空間的正上方或正下方的工件100的區域,溫度更高。即,若使用呈棒狀的多個加熱器32a將工件100直接加熱,則經加熱的工件100的溫度中產生面內分佈。As mentioned above, the plurality of heaters 32a are in the shape of rods and are arranged at predetermined intervals. When the heater 32a is rod-shaped, heat is radiated radially from the central axis of the heater 32a. In this case, the shorter the distance between the central axis of the heater 32a and the heated portion, the higher the temperature of the heated portion. Therefore, when the workpiece 100 is held facing the plurality of heaters 32a, the area of the workpiece 100 located directly above or directly below the heater 32a is compared to the area located between the plurality of heaters 32a. The temperature is higher in the area directly above or below the workpiece 100 in the space. That is, if the workpiece 100 is directly heated using a plurality of rod-shaped heaters 32 a , an in-plane distribution occurs in the temperature of the heated workpiece 100 .
若工件100的溫度中產生面內分佈,則有所形成的有機膜的品質下降之虞。例如,有在溫度變高的部分產生泡,或在溫度變高的部分中有機膜的組成變化之虞。If an in-plane distribution occurs in the temperature of the workpiece 100, the quality of the formed organic film may deteriorate. For example, there is a risk that bubbles may be generated in a part where the temperature becomes high, or the composition of the organic film may change in a part where the temperature becomes high.
在本實施方式的有機膜形成裝置1中,設置有上文所述的多個上部均熱板34a及多個下部均熱板34b。因此,從多個加熱器32a放射的熱入射至多個上部均熱板34a及多個下部均熱板34b,並在這些均熱板的內部沿面方向傳播的同時向工件100放射。其結果,可抑制工件100的溫度中產生面內分佈,進而可提高所形成的有機膜的品質。In the organic film forming apparatus 1 of this embodiment, the plurality of upper heat chambers 34a and the plurality of lower heat chambers 34b described above are provided. Therefore, the heat radiated from the plurality of heaters 32a is incident on the plurality of upper vapor chambers 34a and the plurality of lower vapor chambers 34b, and is radiated toward the workpiece 100 while propagating in the surface direction inside these vapor chambers. As a result, the occurrence of in-plane distribution in the temperature of the workpiece 100 can be suppressed, thereby improving the quality of the formed organic film.
多個上部均熱板34a及多個下部均熱板34b使所入射的熱沿面方向傳播,因此這些均熱板的材料優選為設為導熱率高的材料。多個上部均熱板34a及多個下部均熱板34b例如可設為鋁、銅、不銹鋼等。此外,在使用鋁或銅等容易氧化的材料的情況下,優選為在表面設置包含不易氧化的材料的層。The plurality of upper vapor chambers 34 a and the plurality of lower vapor chambers 34 b cause incident heat to propagate in the plane direction, so the material of these vapor chambers is preferably made of a material with high thermal conductivity. The plurality of upper vapor chambers 34a and the plurality of lower vapor chambers 34b can be made of, for example, aluminum, copper, stainless steel, or the like. Furthermore, when using a material that is easily oxidized, such as aluminum or copper, it is preferable to provide a layer containing a material that is not easily oxidized on the surface.
從多個上部均熱板34a及多個下部均熱板34b放射的熱的一部分朝向處理區域的側方。因此,在處理區域的側部,設置有上文所述的側部均熱板34c、側部均熱板34d。入射至側部均熱板34c、側部均熱板34d的熱在側部均熱板34c、側部均熱板34d沿面方向傳播,同時其一部分向工件100放射。因此,可提高工件100的加熱效率。Part of the heat radiated from the plurality of upper vapor chambers 34a and the plurality of lower vapor chambers 34b is directed toward the side of the processing area. Therefore, the above-mentioned side heating plates 34c and 34d are provided on the sides of the processing area. The heat incident on the side vapor chambers 34 c and 34 d propagates in the surface direction of the side vapor chambers 34 c and 34 d, and a part of the heat is radiated toward the workpiece 100 . Therefore, the heating efficiency of the workpiece 100 can be improved.
側部均熱板34c、側部均熱板34d的材料可設為與上文所述的上部均熱板34a及下部均熱板34b的材料相同。The materials of the side vapor chambers 34c and 34d may be the same as the materials of the upper vapor chambers 34a and the lower vapor chambers 34b described above.
此外,以上例示了多個上部均熱板34a及多個下部均熱板34b沿X方向排列設置的情況,但上部均熱板34a及下部均熱板34b的至少一者也可設為單一的板狀構件。In addition, the above example illustrates a case where a plurality of upper vapor chambers 34a and a plurality of lower vapor chambers 34b are arranged in the X direction. However, at least one of the upper vapor chambers 34a and the lower vapor chambers 34b may be a single unit. Plate-like components.
多個均熱板支撐部35沿X方向排列設置。均熱板支撐部35可在X方向上設置於上部均熱板34a彼此之間的正下方。多個均熱板支撐部35可使用螺杆等緊固構件固定於一對固持器32b。一對均熱板支撐部35裝卸自如地支撐上部均熱板34a的兩端。此外,支撐多個下部均熱板34b的多個均熱板支撐部35也可具有相同的結構。The plurality of vapor chamber support parts 35 are arranged in an array along the X direction. The vapor chamber support part 35 may be provided directly below the upper vapor chambers 34a in the X direction. The plurality of vapor chamber support parts 35 can be fixed to a pair of holders 32b using fastening members such as screws. The pair of vapor chamber support parts 35 detachably support both ends of the upper vapor chamber 34a. In addition, the plurality of vapor chamber supporting parts 35 supporting the plurality of lower vapor chambers 34b may have the same structure.
若由一對均熱板支撐部35支撐上部均熱板34a及下部均熱板34b,則即便上部均熱板34a及下部均熱板34b熱膨脹,也可抑制上部均熱板34a及下部均熱板34b干擾。因此,可抑制上部均熱板34a及下部均熱板34b變形。If the upper vapor chamber 34a and the lower vapor chamber 34b are supported by the pair of vapor chamber support parts 35, even if the upper vapor chamber 34a and the lower vapor chamber 34b thermally expand, the upper vapor chamber 34a and the lower vapor chamber 34b can be suppressed. Board 34b interferes. Therefore, deformation of the upper vapor chamber 34a and the lower vapor chamber 34b can be suppressed.
罩36呈板狀,覆蓋框架31的上表面、底面、及側面。即,由罩36覆蓋框架31的內部。但是,門13側的罩36例如可設置於門13。The cover 36 is plate-shaped and covers the upper surface, bottom surface, and side surfaces of the frame 31 . That is, the inside of the frame 31 is covered with the cover 36 . However, the cover 36 on the door 13 side may be provided on the door 13, for example.
罩36包圍處理區域30a、處理區域30b,但在框架31的上表面與側面的分界線、框架31的側面與底面的分界線、門13的附近設置有間隙。The cover 36 surrounds the processing areas 30 a and 30 b, but has gaps at the boundaries between the upper surface and the side surfaces of the frame 31 , between the side surfaces and the bottom surface of the frame 31 , and in the vicinity of the door 13 .
另外,設置於框架31的上表面及底面的罩36被分割為多個。另外,在所分割的罩36彼此之間設置有間隙。即,處理部30(處理區域30a、處理區域30b)的內部空間經由這些間隙而與腔室10的內部空間連通。因此,可使處理區域30a、處理區域30b的壓力和腔室10的內壁與罩36之間的空間的壓力相同。罩36例如可由不銹鋼等形成。In addition, the cover 36 provided on the upper surface and the bottom surface of the frame 31 is divided into a plurality of parts. In addition, a gap is provided between the divided covers 36 . That is, the internal space of the processing part 30 (the processing area 30a, the processing area 30b) communicates with the internal space of the chamber 10 via these gaps. Therefore, the pressure of the processing areas 30 a and 30 b and the pressure of the space between the inner wall of the chamber 10 and the cover 36 can be made the same. The cover 36 may be formed of stainless steel or the like, for example.
冷卻部40對設置有加熱部32的區域供給冷卻氣體。例如冷卻部40利用冷卻氣體將包圍處理區域30a、處理區域30b的均熱部34冷卻,利用經冷卻的均熱部34將處於高溫狀態的工件100間接冷卻。另外,例如冷卻部40也可對工件100供給冷卻氣體,而將處於高溫狀態的工件100直接地冷卻。The cooling unit 40 supplies cooling gas to the area where the heating unit 32 is installed. For example, the cooling unit 40 uses cooling gas to cool the uniform heat portion 34 surrounding the processing areas 30 a and 30 b, and uses the cooled uniform heat portion 34 to indirectly cool the workpiece 100 in a high-temperature state. In addition, for example, the cooling unit 40 may supply cooling gas to the workpiece 100 to directly cool the workpiece 100 in a high-temperature state.
即,冷卻部40可將工件100間接及直接地冷卻。另外,冷卻部40在後述的清潔工序中可具有作為將後述的清潔氣體G供給至處理區域30a、處理區域30b的清潔部50的作用。That is, the cooling unit 40 can cool the workpiece 100 indirectly or directly. In addition, the cooling unit 40 may function as the cleaning unit 50 that supplies the cleaning gas G described below to the processing areas 30 a and 30 b in the cleaning process described below.
冷卻部40例如具有第一氣體供給路徑40a以及第二氣體供給路徑40b。 首先,對第一氣體供給路徑40a進行說明。第一氣體供給路徑40a具有:噴嘴41、氣體源42、氣體控制部43及切換閥54。 The cooling unit 40 has, for example, a first gas supply path 40a and a second gas supply path 40b. First, the first gas supply path 40a will be described. The first gas supply path 40a includes a nozzle 41, a gas source 42, a gas control unit 43, and a switching valve 54.
如圖1所示,噴嘴41可連接於設置有多個加熱器32a的空間。噴嘴41例如貫通罩36,從而可安裝於側部均熱板34c或框架31等。噴嘴41可在Y方向上設置多個(參照圖3)。此外,噴嘴41的數量或配置可適宜變更。例如,在X方向上,可在處理部30的其中一側設置噴嘴41,也可在處理部30的兩側設置噴嘴41。As shown in FIG. 1 , the nozzle 41 can be connected to a space in which a plurality of heaters 32 a are provided. For example, the nozzle 41 penetrates the cover 36 and can be mounted on the side vapor chamber 34c, the frame 31, or the like. A plurality of nozzles 41 may be provided in the Y direction (see FIG. 3 ). In addition, the number or arrangement of the nozzles 41 can be appropriately changed. For example, in the X direction, the nozzle 41 may be provided on one side of the processing part 30 , or the nozzle 41 may be provided on both sides of the processing part 30 .
氣體源42對噴嘴41供給冷卻氣體。氣體源42例如可設為高壓儲氣瓶、工廠配管等。另外,氣體源42也可設置多個。The gas source 42 supplies cooling gas to the nozzle 41 . The gas source 42 may be, for example, a high-pressure gas cylinder, factory piping, or the like. In addition, multiple gas sources 42 may be provided.
冷卻氣體優選為設為不易與經加熱的工件100反應的氣體。冷卻氣體例如可設為氮氣、稀有氣體等。稀有氣體例如為氬氣或氦氣等。若冷卻氣體為氮氣,則可實現運轉成本的降低。由於氦氣的導熱率高,因此若使用氦氣作為冷卻氣體,則可實現冷卻時間的縮短。 冷卻氣體的溫度例如可設為室溫(例如,25℃)以下。 The cooling gas is preferably a gas that does not easily react with the heated workpiece 100 . The cooling gas may be, for example, nitrogen gas, rare gas, or the like. The rare gas is, for example, argon or helium. If the cooling gas is nitrogen, operating costs can be reduced. Since helium has high thermal conductivity, if helium is used as the cooling gas, the cooling time can be shortened. The temperature of the cooling gas can be, for example, room temperature (for example, 25° C.) or lower.
氣體控制部43設置於噴嘴41與氣體源42之間。氣體控制部43例如可進行冷卻氣體的供給與停止、或冷卻氣體的流速及流量的至少任一個的控制。The gas control unit 43 is provided between the nozzle 41 and the gas source 42 . The gas control unit 43 can, for example, control at least one of the supply and stop of the cooling gas, or the flow rate and flow rate of the cooling gas.
另外,冷卻氣體的供給時機可設為對工件100的加熱處理完成之後。此外,所謂加熱處理的完成,可設為將形成有機膜的溫度維持規定時間之後。In addition, the supply timing of the cooling gas may be set after completion of the heat treatment of the workpiece 100 . In addition, the completion of the heat treatment may be after maintaining the temperature at which the organic film is formed for a predetermined period of time.
切換閥54是用於切換第一氣體供給路徑40a與第二氣體供給路徑40b的閥。切換閥54設置於噴嘴41與氣體控制部43之間且為腔室10的外部。The switching valve 54 is a valve for switching the first gas supply path 40a and the second gas supply path 40b. The switching valve 54 is provided between the nozzle 41 and the gas control part 43 and outside the chamber 10 .
接著,對第二氣體供給路徑40b進行說明。第二氣體供給路徑40b是為了在後述的清潔工序中清潔腔室10的內部而設置。第二氣體供給路徑40b經由腔室10的開口11a將處於腔室10的內部的粒子等異物排出至腔室10的外部。例如,第二氣體供給路徑40b向處理區域30a、處理區域30b的內部供給清潔氣體G,而形成向腔室10的開口11a的氣流。Next, the second gas supply path 40b will be described. The second gas supply path 40b is provided to clean the inside of the chamber 10 in a cleaning step described below. The second gas supply path 40 b discharges foreign matter such as particles inside the chamber 10 to the outside of the chamber 10 through the opening 11 a of the chamber 10 . For example, the second gas supply path 40b supplies the cleaning gas G into the inside of the processing areas 30a and 30b to form a gas flow toward the opening 11a of the chamber 10.
在本實施方式中,第二氣體供給路徑40b也作為本發明的“清潔部”發揮功能。以下,有時也將第二氣體供給路徑40b稱為清潔部50。In this embodiment, the second gas supply path 40b also functions as the "cleaning part" of the present invention. Hereinafter, the second gas supply path 40b may also be referred to as the cleaning part 50.
清潔部50例如具有:噴嘴41、氣體源52、氣體控制部53、及切換閥54。在此情況下,清潔部50經由切換閥54與第一氣體供給路徑40a連接。The cleaning part 50 has, for example, a nozzle 41, a gas source 52, a gas control part 53, and a switching valve 54. In this case, the cleaning part 50 is connected to the first gas supply path 40 a via the switching valve 54 .
氣體源52向多個噴嘴41供給清潔氣體G。氣體源52例如可設為高壓儲氣瓶、工廠配管等。另外,氣體源52也可設置多個。The gas source 52 supplies the cleaning gas G to the plurality of nozzles 41 . The gas source 52 may be, for example, a high-pressure gas cylinder, factory piping, or the like. In addition, multiple gas sources 52 may be provided.
清潔氣體G優選為設為不易與處於經加熱的腔室10的內壁、或腔室10的內部的元件反應的氣體。清潔氣體G例如可設為清潔乾燥空氣、氮氣、二氧化碳(CO 2)、稀有氣體等。稀有氣體例如為氬氣或氦氣等。在此情況下,若清潔氣體G為清潔乾燥空氣或氮氣,則可實現運轉成本的降低。 It is preferable that the cleaning gas G is a gas that does not easily react with the inner wall of the heated chamber 10 or the components inside the chamber 10 . The clean gas G can be, for example, clean dry air, nitrogen, carbon dioxide (CO 2 ), rare gas, or the like. The rare gas is, for example, argon or helium. In this case, if the cleaning gas G is clean dry air or nitrogen, the operating cost can be reduced.
清潔氣體G可設為與上文所述的冷卻氣體相同,也可設為不同。在將清潔氣體G設為與冷卻氣體相同的情況下,也可設置氣體源52及氣體源42的任一個。 清潔氣體G的溫度例如可設為室溫(例如,25℃)。 The cleaning gas G may be the same as the cooling gas mentioned above, or may be different. When the cleaning gas G is the same as the cooling gas, either the gas source 52 or the gas source 42 may be provided. The temperature of the cleaning gas G can be set to room temperature (for example, 25° C.), for example.
氣體控制部53設置於切換閥54與氣體源52之間。氣體控制部53例如可控制清潔氣體G的供給與供給的停止。另外,氣體控制部53例如也可進行清潔氣體G的流速及流量的至少任一個的控制。清潔氣體G的流速或流量可根據腔室10的大小、或噴嘴41的形狀、數量、配置等適宜變更。清潔氣體G的流速或流量例如可藉由進行實驗或模擬來適宜求出。The gas control unit 53 is provided between the switching valve 54 and the gas source 52 . The gas control unit 53 can control the supply and stop of the supply of the cleaning gas G, for example. In addition, the gas control unit 53 may control at least one of the flow rate and the flow rate of the cleaning gas G, for example. The flow rate or flow rate of the cleaning gas G can be appropriately changed depending on the size of the chamber 10 or the shape, number, arrangement, etc. of the nozzles 41 . The flow rate or flow rate of the cleaning gas G can be appropriately determined by conducting experiments or simulations, for example.
接著,對有機膜形成裝置1的動作進行例示。 圖2是用於例示工件100的處理工序的圖表。 如圖2所示,有機膜的形成工序包括:工件的搬入工序、升溫工序、加熱處理工序、冷卻工序、工件的搬出工序、以及清潔工序。 首先,在工件的搬入工序中,開閉門13遠離凸緣11,將工件100搬入至腔室10的內部空間。當向腔室10的內部空間搬入工件100後,由排氣部20將腔室10的內部空間減壓至規定壓力為止。 Next, the operation of the organic film forming apparatus 1 will be exemplified. FIG. 2 is a diagram illustrating the processing steps of the workpiece 100 . As shown in FIG. 2 , the organic film forming process includes a workpiece loading process, a temperature raising process, a heat treatment process, a cooling process, a workpiece unloading process, and a cleaning process. First, in the workpiece loading process, the opening and closing door 13 is moved away from the flange 11 and the workpiece 100 is carried into the internal space of the chamber 10 . After the workpiece 100 is loaded into the internal space of the chamber 10, the exhaust unit 20 depressurizes the internal space of the chamber 10 to a predetermined pressure.
當將腔室10的內部空間減壓至規定壓力為止後,對加熱器32a施加電力。於是,如圖2所示,工件100的溫度上升。將工件100的溫度上升的工序稱為升溫工序。在本實施方式中,升溫工序實施兩次(升溫工序(1)、升溫工序(2))。此外,規定壓力只要為溶液中的聚醯胺酸不與殘留於腔室10的內部空間的氧反應而被氧化的壓力即可。規定壓力例如只要設為1×10 -2Pa~100 Pa即可。即,未必需要利用第二排氣部22進行排氣,也可在利用第一排氣部21開始排氣之後,當腔室10的內部空間成為10 Pa~100 Pa的範圍內的壓力時,開始加熱部32對工件100的加熱。 After the internal space of the chamber 10 is decompressed to a predetermined pressure, electric power is applied to the heater 32a. Then, as shown in FIG. 2 , the temperature of the workpiece 100 rises. The process of increasing the temperature of the workpiece 100 is called a temperature increasing process. In this embodiment, the temperature raising process is performed twice (the temperature raising process (1), the temperature raising process (2)). In addition, the predetermined pressure may be a pressure at which the polyamide in the solution does not react with oxygen remaining in the internal space of the chamber 10 and be oxidized. The predetermined pressure may be, for example, 1×10 -2 Pa to 100 Pa. That is, it is not necessarily necessary to use the second exhaust part 22 for exhaust. After the exhaust is started using the first exhaust part 21, when the internal space of the chamber 10 reaches a pressure in the range of 10 Pa to 100 Pa, Heating of the workpiece 100 by the heating unit 32 is started.
在升溫工序之後,進行加熱處理工序。加熱處理工序為將規定的溫度維持規定時間的工序。在本實施方式中,可設置加熱處理工序(1)及加熱處理工序(2)。 加熱處理工序(1)例如可設為下述工序,即:以第一溫度將工件100加熱規定時間,使溶液中所含的水分或氣體等排出。第一溫度例如只要設為100℃~200℃即可。 After the temperature raising process, a heat treatment process is performed. The heat treatment process is a process of maintaining a predetermined temperature for a predetermined time. In this embodiment, the heat treatment process (1) and the heat treatment process (2) can be provided. The heat treatment step (1) may be, for example, a step of heating the workpiece 100 at a first temperature for a predetermined time to discharge moisture, gas, etc. contained in the solution. The first temperature may be, for example, 100°C to 200°C.
藉由實施加熱處理工序(1),而可防止溶液中所含的水分或氣體包含于作為成品的有機膜。此外,根據溶液的成分等不同,第一加熱處理工序可改變溫度來實施多次,也可省略第一加熱處理工序。By performing the heat treatment step (1), it is possible to prevent moisture or gas contained in the solution from being included in the finished organic film. In addition, depending on the components of the solution, etc., the first heat treatment step may be performed multiple times while changing the temperature, or the first heat treatment step may be omitted.
加熱處理工序(2)為下述工序,即:將塗布有溶液的基板(工件100)以規定的壓力及溫度維持規定時間,形成有機膜。第二溫度只要設為引起醯亞胺化的溫度即可,例如只要設為300℃以上即可。在本實施方式中,為了獲得分子鏈的填充度高的有機膜,在400℃~600℃下實施加熱處理工序。The heat treatment step (2) is a step in which the substrate (workpiece 100) coated with the solution is maintained at a predetermined pressure and temperature for a predetermined time to form an organic film. The second temperature may be a temperature that causes imidization, for example, it may be 300° C. or higher. In this embodiment, in order to obtain an organic film with a high degree of molecular chain filling, a heat treatment step is performed at 400°C to 600°C.
冷卻工序為使形成了有機膜的工件100的溫度下降的工序。在本實施方式中,在加熱處理工序(2)之後進行。工件100被冷卻至能夠搬出的溫度。例如,若所搬出的工件100的溫度為常溫,則工件100的搬出容易。但是,在有機膜形成裝置1中,工件100連續進行加熱處理。因此,若每次搬出工件100時將工件100的溫度設為常溫,則使下一工件100升溫的時間變長。即,有生產性下降之虞。要搬出的工件100的溫度例如只要設為50℃~90℃即可。將此搬出溫度設為第三溫度。The cooling process is a process of lowering the temperature of the workpiece 100 on which the organic film is formed. In this embodiment, it is performed after the heat treatment step (2). The workpiece 100 is cooled to a temperature that allows it to be moved out. For example, if the temperature of the workpiece 100 to be carried out is normal temperature, the workpiece 100 can be carried out easily. However, in the organic film forming apparatus 1, the workpiece 100 is continuously heated. Therefore, if the temperature of the workpiece 100 is set to normal temperature each time the workpiece 100 is carried out, the time required to raise the temperature of the next workpiece 100 becomes longer. That is, there is a risk of productivity decline. The temperature of the workpiece 100 to be carried out may be, for example, 50°C to 90°C. Let this carry-out temperature be the third temperature.
控制器60將第一排氣部21的閥25閉合。然後,控制冷卻部40,而向設置有多個加熱器32a的空間供給冷卻氣體,由此間接及直接地使工件100的溫度下降。The controller 60 closes the valve 25 of the first exhaust part 21. Then, the cooling unit 40 is controlled to supply cooling gas to the space where the plurality of heaters 32 a are installed, thereby indirectly and directly lowering the temperature of the workpiece 100 .
因此,設置於上部均熱板34a彼此之間、及下部均熱板34b彼此之間等的間隙比設置於上部均熱板34a(下部均熱板34b)與側部均熱板34c之間、及上部均熱板34a(下部均熱板34b)與側部均熱板34d之間的間隙大。由此,在冷卻部40供給冷卻氣體的情況下,可增加向工件100的冷卻氣體的量。另外,可減少從處理區域30a、處理區域30b排出的冷卻氣體的量。因此,可有效率地將工件100冷卻。Therefore, the gap between the upper vapor chambers 34a and the lower vapor chambers 34b is larger than the gap between the upper vapor chambers 34a (lower vapor chambers 34b) and the side vapor chambers 34c. And the gap between the upper vapor chamber 34a (lower vapor chamber 34b) and the side vapor chamber 34d is large. Accordingly, when the cooling unit 40 supplies cooling gas, the amount of cooling gas to the workpiece 100 can be increased. In addition, the amount of cooling gas discharged from the processing areas 30a and 30b can be reduced. Therefore, the workpiece 100 can be efficiently cooled.
另外,在剛剛形成了有機膜後,腔室10的內壓比大氣壓低,即成為腔室10的內部氣體少的狀態。因此,即便將冷卻氣體供給至腔室10的內部,也可抑制昇華物中所含的成分因所供給的冷卻氣體而成為固體的成分飛散。In addition, immediately after the organic film is formed, the internal pressure of the chamber 10 is lower than the atmospheric pressure, that is, the internal gas of the chamber 10 is in a low state. Therefore, even if the cooling gas is supplied to the inside of the chamber 10 , it is possible to suppress components contained in the sublimate that become solid due to the supplied cooling gas from scattering.
在檢測腔室10的內壓的、未圖示的真空計的輸出成為與大氣壓相同的壓力後,控制器60將第二排氣部22的閥25閉合,打開第三排氣部23的閥25,始終排出冷卻氣體。After the output of the vacuum gauge (not shown) that detects the internal pressure of the chamber 10 reaches the same pressure as the atmospheric pressure, the controller 60 closes the valve 25 of the second exhaust part 22 and opens the valve of the third exhaust part 23 25. Always discharge cooling gas.
控制器60也可在未圖示的溫度計的檢測值成為200℃以下後,控制切換閥54,向設置有多個加熱器32a的空間供給清潔氣體G。在清潔氣體G為清潔乾燥空氣(Clean Dry Air,CDA)、冷卻氣體為N 2或稀有氣體的情況下,可降低N 2或稀有氣體的使用量。 The controller 60 may control the switching valve 54 to supply the cleaning gas G to the space where the plurality of heaters 32 a are installed, after the detection value of the thermometer (not shown) becomes 200° C. or less. When the cleaning gas G is Clean Dry Air (CDA) and the cooling gas is N 2 or a rare gas, the usage amount of N 2 or the rare gas can be reduced.
在工件的搬出工序中,在形成了有機膜的工件100的溫度成為第三溫度後,停止導入至腔室10內的冷卻氣體或者清潔氣體G的供給。然後,開閉門13遠離凸緣11,從而搬出所述工件100。In the workpiece unloading process, after the temperature of the workpiece 100 on which the organic film is formed reaches the third temperature, the supply of the cooling gas or the cleaning gas G introduced into the chamber 10 is stopped. Then, the opening and closing door 13 moves away from the flange 11, and the workpiece 100 is carried out.
如上文所述,當昇華物與溫度比經加熱的工件100低的元件接觸時,昇華物中所含的成分有時會成為固體而附著於所述元件。As mentioned above, when the sublimated substance comes into contact with a component whose temperature is lower than that of the heated workpiece 100 , components contained in the sublimated substance may become solid and adhere to the component.
然而,由於上部均熱板34a及下部均熱板34b被加熱,因此可抑制昇華物中所含的成分附著於上部均熱板34a及下部均熱板34b。另外,如上文所述,由於在腔室10的內部形成有向設置有排氣口17或排氣口18的腔室10的底面(或頂棚面)的氣流,因此昇華物隨著所述氣流而被排出至腔室10外。However, since the upper vapor chamber 34a and the lower vapor chamber 34b are heated, the components contained in the sublimated product are suppressed from adhering to the upper vapor chamber 34a and the lower vapor chamber 34b. In addition, as mentioned above, since an air flow is formed inside the chamber 10 toward the bottom surface (or ceiling surface) of the chamber 10 where the exhaust port 17 or the exhaust port 18 is provided, the sublimates follow the air flow. and be discharged out of the chamber 10 .
如上文所述,由於考慮到昇華物會被排出至腔室10外,因此認為可抑制昇華物中所含的成分附著於工件100。因此,以往,在將所述工件100搬出之後,下一工件100被搬入至腔室10內,並反復進行所述工序。As described above, it is considered that the sublimated material is discharged out of the chamber 10 , and therefore it is considered that the components contained in the sublimated material can be suppressed from adhering to the workpiece 100 . Therefore, conventionally, after the workpiece 100 was carried out, the next workpiece 100 was carried into the chamber 10, and the above process was repeated.
但是最終發現,實際上少量的昇華物附著於腔室10的內壁。藉由反復進行有機膜的形成工序,少量的昇華物也反復附著於腔室10的內壁。其結果,從昇華物產生的固體變大。從昇華物產生的固體當以某種程度變大後,從腔室10的內壁剝落。從腔室10的內壁剝落的固體有成為粒子等異物而附著於工件100的表面之虞。However, it was eventually discovered that a small amount of sublimation actually adhered to the inner wall of the chamber 10 . By repeating the organic film formation process, a small amount of sublimate is repeatedly attached to the inner wall of the chamber 10 . As a result, the solid produced from the sublimate becomes larger. The solid produced from the sublimate becomes larger to some extent and then peels off from the inner wall of the chamber 10 . The solid matter peeled off from the inner wall of the chamber 10 may become foreign matter such as particles and adhere to the surface of the workpiece 100 .
一般而言,設置用於防止昇華物附著於腔室的內壁的防粘板,並定期地更換防粘板。但是,所述方法的更換作業繁雜。因此,本發明者等人對將從昇華物產生的固體從腔室10的內壁等去除的清潔進行了研究。Generally, an anti-adhesive plate is provided to prevent the adhesion of sublimated substances to the inner wall of the chamber, and the anti-adhesive plate is regularly replaced. However, the replacement work of this method is complicated. Therefore, the inventors of the present invention conducted research on cleaning to remove solids generated from sublimates from the inner wall of the chamber 10 and the like.
接著,一併對清潔部50的作用及本實施方式的有機膜形成裝置的清潔方法進行說明。 圖3是用於例示清潔部50的作用的示意剖面圖。 此外,為了避免變得繁雜,省略了設置於腔室10的內部的元件等來描述。 Next, the function of the cleaning part 50 and the cleaning method of the organic film forming apparatus of this embodiment will be described together. FIG. 3 is a schematic cross-sectional view illustrating the function of the cleaning unit 50 . In addition, in order to avoid complication, description of components and the like provided inside the chamber 10 is omitted.
如圖3所示,清潔部50在將腔室10的開口11a開放時(門13遠離凸緣11時),向腔室10的內部供給清潔氣體G。例如,在將腔室10的開口11a開放時,控制器60控制氣體控制部53,而使清潔氣體G從噴嘴41向加熱部32內流動。清潔氣體G被從加熱部32內供給至腔室10的內部。As shown in FIG. 3 , the cleaning unit 50 supplies the cleaning gas G into the inside of the chamber 10 when the opening 11 a of the chamber 10 is opened (when the door 13 is moved away from the flange 11 ). For example, when the opening 11 a of the chamber 10 is opened, the controller 60 controls the gas control unit 53 so that the cleaning gas G flows from the nozzle 41 into the heating unit 32 . The cleaning gas G is supplied from the heating part 32 to the inside of the chamber 10 .
如上文所述,設置於上部均熱板34a彼此之間、及下部均熱板34b彼此之間等的間隙比設置於上部均熱板34a(下部均熱板34b)與側部均熱板34c之間、及上部均熱板34a(下部均熱板34b)與側部均熱板34d之間的間隙大。因此,在清潔部50供給清潔氣體G的情況下,可增加向處理區域30a、處理區域30b供給的清潔氣體G的量。As described above, the gap between the upper vapor chambers 34a and the lower vapor chambers 34b is larger than the gap between the upper vapor chambers 34a (lower vapor chambers 34b) and the side vapor chambers 34c. There is a large gap between the upper vapor chamber 34a (lower vapor chamber 34b) and the side vapor chamber 34d. Therefore, when the cleaning part 50 supplies the cleaning gas G, the amount of the cleaning gas G supplied to the processing areas 30a and 30b can be increased.
供給至腔室10的內部的清潔氣體G經由腔室10的開口11a被排出至腔室10的外部。此時,處於腔室10的內部的昇華物或粒子等異物隨著清潔氣體G的氣流而被排出至腔室10的外部。此外,加熱器32a、固持器32b、均熱部34及均熱板支撐部35因熱膨脹而摩擦。由於這些構件摩擦,而產生微小的金屬片。所述金屬片也包含在異物中。另外,若在腔室10的內部形成氣流,則可使附著於腔室10的內壁、或設置於腔室10的內部的元件的昇華物的成分(固體)剝離,並且使其排出至腔室10的外部。The cleaning gas G supplied to the inside of the chamber 10 is discharged to the outside of the chamber 10 through the opening 11 a of the chamber 10 . At this time, foreign matter such as sublimated matter or particles inside the chamber 10 is discharged to the outside of the chamber 10 along with the flow of the cleaning gas G. In addition, the heater 32a, the holder 32b, the vapor chamber 34, and the vapor chamber support part 35 rub due to thermal expansion. As these components rub together, tiny pieces of metal are produced. The metal pieces are also included in the foreign matter. In addition, when an airflow is formed inside the chamber 10 , components (solids) of sublimates adhering to the inner wall of the chamber 10 or components installed inside the chamber 10 can be peeled off and discharged to the chamber. Exterior of room 10.
在此情況下,可定期地或者視需要向腔室10的內部供給清潔氣體G。即,可與進行工件100的處理的工序分開設置清潔工序,在清潔工序中向腔室10的內部供給清潔氣體G。In this case, the cleaning gas G may be supplied to the inside of the chamber 10 periodically or as needed. That is, the cleaning process may be provided separately from the process of processing the workpiece 100 , and the cleaning gas G may be supplied into the chamber 10 during the cleaning process.
另外,在將處理完畢的工件100從腔室10搬出,並將接下來進行處理的工件100搬入至腔室10之前的期間,也可向腔室10的內部供給清潔氣體G。即,即便是進行工件100的處理的一系列工序,在腔室10的內部無工件100的情況下,也可利用清潔部50進行清潔。In addition, the cleaning gas G may be supplied into the chamber 10 before the processed workpiece 100 is moved out of the chamber 10 and the workpiece 100 to be processed next is moved into the chamber 10 . That is, even if a series of steps of processing the workpiece 100 are performed, the cleaning unit 50 can be used to clean the workpiece 100 even if there is no workpiece 100 inside the chamber 10 .
若設置有清潔部50,則可使處於腔室10的內部的昇華物或粒子等異物隨著清潔氣體G的氣流,而排出至腔室10的外部。另外,可使附著於腔室10的內壁等的昇華物的成分(固體)剝離,並且使其排出至腔室10的外部。 即,若設置有清潔部50,則能夠充分去除處於腔室10的內部的異物。 If the cleaning part 50 is provided, foreign matter such as sublimated matter or particles inside the chamber 10 can be discharged to the outside of the chamber 10 along with the flow of the cleaning gas G. In addition, components (solids) of the sublimate adhered to the inner wall and the like of the chamber 10 can be peeled off and discharged to the outside of the chamber 10 . That is, if the cleaning part 50 is provided, foreign matter inside the chamber 10 can be sufficiently removed.
接著,進一步對清潔部50的效果進行說明。 圖4是將利用排氣部20的粒子的排出與利用清潔部50的粒子的排出進行組合時的圖表。 在利用排氣部20的粒子的排出時,反復進行了10次以下作業:對腔室10的內部進行減壓,並將減壓後的腔室10的內部恢復至大氣壓。 在利用清潔部50的粒子的排出時,在利用排氣部20的粒子的排出之後,從多個噴嘴41同時供給清潔氣體G。即,在利用清潔部50的粒子的排出之前,預先進行利用排氣部20的粒子的排出。 Next, the effect of the cleaning part 50 will be further described. FIG. 4 is a graph when the discharge of particles by the exhaust unit 20 and the discharge of particles by the cleaning unit 50 are combined. When discharging particles using the exhaust unit 20 , the operation of depressurizing the interior of the chamber 10 and returning the depressurized interior of the chamber 10 to atmospheric pressure was repeated 10 times. When the particles are discharged by the cleaning unit 50 , the cleaning gas G is simultaneously supplied from the plurality of nozzles 41 after the particles are discharged by the exhaust unit 20 . That is, before the particles are discharged by the cleaning part 50 , the particles are discharged by the exhaust part 20 in advance.
根據圖4可知,若能夠進行利用排氣部20的粒子的排出與利用清潔部50的粒子的排出,則可排出各種尺寸的粒子。As can be seen from FIG. 4 , if particles can be discharged by the exhaust part 20 and the particles can be discharged by the cleaning part 50 , particles of various sizes can be discharged.
圖5是僅進行利用清潔部50的粒子的排出時的圖表。 在利用清潔部50的粒子的排出時,從多個噴嘴41同時供給清潔氣體G。 根據圖5可知,即便僅進行利用清潔部50的粒子的排出,也可排出各種尺寸的粒子。 FIG. 5 is a graph when only particles are discharged by the cleaning unit 50 . When discharging particles by the cleaning unit 50 , the cleaning gas G is simultaneously supplied from the plurality of nozzles 41 . As can be seen from FIG. 5 , even if only the particles are discharged by the cleaning unit 50 , particles of various sizes can be discharged.
此處,進行圖4與圖5的比較。根據圖4與圖5的比較可知,無論預先進行還是不預先進行利用排氣部20的粒子的排出,在剛剛利用清潔部50開始粒子的排出後排出的粒子的數量都無大的不同。這意味著難以利用排氣部20充分去除粒子。即,若在將腔室10密閉的狀態下,能夠進行依次執行腔室10的內部排氣與氣體向腔室10的內部的供給的清潔,則即便可以某種程度將粒子等異物去除,也無法充分去除粒子等異物。 與此相對,若能夠利用清潔部50進行清潔,則根據圖5可知,能夠充分去除處於腔室10的內部的異物。 Here, comparison is made between FIG. 4 and FIG. 5 . Comparing FIGS. 4 and 5 , it can be seen that the number of particles discharged immediately after the particle discharge is started by the cleaning unit 50 is not significantly different whether the particles are discharged in advance by the exhaust unit 20 or not. This means that it is difficult to sufficiently remove particles using the exhaust unit 20 . That is, if it is possible to sequentially perform cleaning of exhausting the interior of the chamber 10 and supplying gas to the interior of the chamber 10 while the chamber 10 is sealed, even if foreign matter such as particles can be removed to some extent, Foreign matter such as particles cannot be sufficiently removed. On the other hand, if the cleaning part 50 can be used for cleaning, it can be seen from FIG. 5 that foreign matter inside the chamber 10 can be sufficiently removed.
此處,在圖4與圖5中對從利用清潔部50開始粒子的排出起的經過時間為3 min至5 min之間的各種尺寸的粒子的檢測量進行比較。根據圖4與圖5的比較可知,在從利用清潔部50開始粒子的排出起的經過時間為3 min至5 min之間,圖4的粒子檢測量更少。因此,可縮短利用清潔部50的粒子的排出時間。即,更優選為進行利用排氣部20的粒子的排出與利用清潔部50的粒子的排出。但是,若在工件100處於腔室10內的狀態下利用排氣部20的粒子的排出,則有粒子附著於工件100的表面之虞。進行利用排氣部20的粒子的排出與利用清潔部50的粒子的排出優選為在有機膜形成裝置1的待機中進行。Here, in FIGS. 4 and 5 , the detection amounts of particles of various sizes are compared between 3 min and 5 min after the elapsed time from the start of particle discharge by the cleaning unit 50 . Comparing FIG. 4 and FIG. 5 , it can be seen that when the elapsed time from the start of particle discharge by the cleaning unit 50 is between 3 minutes and 5 minutes, the particle detection amount in FIG. 4 is smaller. Therefore, the discharge time of particles by the cleaning unit 50 can be shortened. That is, it is more preferable to perform the discharge of particles by the exhaust part 20 and the discharge of particles by the cleaning part 50 . However, if the exhaust part 20 is used to discharge particles while the workpiece 100 is in the chamber 10 , there is a risk that the particles may adhere to the surface of the workpiece 100 . It is preferable to perform the discharge of particles by the exhaust unit 20 and the discharge of particles by the cleaning unit 50 while the organic film forming apparatus 1 is on standby.
圖6也是僅進行利用清潔部50的粒子的排出時的圖表。 但是,在圖6的情況下,從多個噴嘴41依次供給清潔氣體G。例如,從任意的多個噴嘴41以規定的時間供給清潔氣體G,在停止來自所述多個噴嘴41的清潔氣體G的供給之後,從其他多個噴嘴41以規定的時間供給清潔氣體G。在此情況下,可從設置于上方的多個噴嘴41依序供給清潔氣體G,可從設置于下方的多個噴嘴41依序供給清潔氣體G,也可從任意的多個噴嘴41依序供給清潔氣體G。另外,在供給清潔氣體G時使用的噴嘴41也可為一個。 FIG. 6 is also a graph when only particles are discharged by the cleaning unit 50 . However, in the case of FIG. 6 , the cleaning gas G is sequentially supplied from the plurality of nozzles 41 . For example, the cleaning gas G is supplied from any plurality of nozzles 41 for a predetermined time, and after the supply of the cleaning gas G from the plurality of nozzles 41 is stopped, the cleaning gas G is supplied from the other plurality of nozzles 41 for a predetermined time. In this case, the cleaning gas G may be sequentially supplied from the plurality of nozzles 41 provided above, the cleaning gas G may be sequentially supplied from the plurality of nozzles 41 provided below, or the cleaning gas G may be sequentially supplied from any plurality of nozzles 41 . Supply clean gas G. In addition, the number of nozzles 41 used when supplying the cleaning gas G may be one.
根據圖6可知,在從利用清潔部50開始粒子的排出起的經過時間為3 min的期間內,粒子的檢測量減少。但是,在從利用清潔部50開始粒子的排出起的經過時間為4 min時,粒子的檢測量增加。認為其原因在於:藉由將清潔氣體的供給從所述多個噴嘴41變更為其他多個噴嘴41,而腔室10內的清潔氣體G的氣流發生了變化。可認為,藉由腔室10內的清潔氣體G的氣流發生變化,利用之前的清潔氣體G的氣流無法排出的粒子被排出至腔室10的外部。As can be seen from FIG. 6 , the detected amount of particles decreases during the period of 3 minutes that elapses from the start of particle discharge by the cleaning unit 50 . However, when the elapsed time from the start of particle discharge by the cleaning unit 50 is 4 minutes, the detected amount of particles increases. The reason is considered to be that the flow of the cleaning gas G in the chamber 10 is changed by changing the supply of the cleaning gas from the plurality of nozzles 41 to the other plurality of nozzles 41 . It is considered that when the flow of the cleaning gas G in the chamber 10 changes, particles that cannot be discharged by the previous flow of the cleaning gas G are discharged to the outside of the chamber 10 .
因此,根據圖5與圖6的比較可知,若從所述多個噴嘴41至其他多個噴嘴41依次供給清潔氣體G,則可大幅增加所排出的粒子的數量。這意味著可更有效果地將處於腔室10的內部的異物去除。Therefore, as can be seen from a comparison between FIG. 5 and FIG. 6 , if the cleaning gas G is sequentially supplied from the plurality of nozzles 41 to the other plurality of nozzles 41 , the number of particles discharged can be significantly increased. This means that foreign matter inside the chamber 10 can be removed more effectively.
圖7是用於例示另一實施方式的清潔部50a的示意剖面圖。 與上文所述的清潔部50同樣地,清潔部50a例如具有多個噴嘴41、氣體源52、及氣體控制部53。 另外,如圖6所示,清潔部50a還可具有檢測部56。 FIG. 7 is a schematic cross-sectional view illustrating the cleaning unit 50a according to another embodiment. Like the cleaning part 50 described above, the cleaning part 50a has, for example, a plurality of nozzles 41, a gas source 52, and a gas control part 53. In addition, as shown in FIG. 6 , the cleaning part 50a may further include a detection part 56.
檢測部56可設置於與腔室10的開口11a相向的位置。檢測部56檢測從腔室10的開口11a排出的清潔氣體G中所含的粒子等異物。檢測部56例如可設為粒子計數器等。The detection part 56 may be provided at a position facing the opening 11 a of the chamber 10 . The detection unit 56 detects foreign matter such as particles contained in the cleaning gas G discharged from the opening 11 a of the chamber 10 . The detection unit 56 may be a particle counter, for example.
若設置有檢測部56,則可檢測清潔的終點。例如,在由檢測部56檢測出的異物的數量成為規定值以下的情況下,控制器60可控制氣體控制部53,而停止清潔氣體G的供給,結束清潔作業。 若可檢測出清潔的終點,則與藉由時間管理等結束清潔的情況相比,能夠降低清潔氣體G的消耗量。另外,可更適當地將處於腔室10的內部的異物去除。 If the detection part 56 is provided, the end point of cleaning can be detected. For example, when the number of foreign objects detected by the detection unit 56 becomes less than a predetermined value, the controller 60 may control the gas control unit 53 to stop the supply of the cleaning gas G and end the cleaning operation. If the end point of cleaning can be detected, the consumption of cleaning gas G can be reduced compared to the case where cleaning is ended by time management or the like. In addition, foreign matter present inside the chamber 10 can be removed more appropriately.
圖8是用於例示另一實施方式的清潔部50b的示意剖面圖。 與上文所述的清潔部50同樣地,清潔部50b例如具有多個噴嘴41、氣體源52、及氣體控制部53。 另外,如圖8所示,清潔部50b還可具有檢測部56、及框體55。 FIG. 8 is a schematic cross-sectional view illustrating the cleaning unit 50b according to another embodiment. Like the cleaning unit 50 described above, the cleaning unit 50b includes, for example, a plurality of nozzles 41, a gas source 52, and a gas control unit 53. In addition, as shown in FIG. 8 , the cleaning part 50b may further include a detection part 56 and a frame 55 .
框體55具有氣密結構,可設置於與腔室10的開口11a相向的位置。檢測部56可設置於框體55的內部。框體55例如可設為微環境(mini-environment)(局部潔淨環境)。The frame 55 has an airtight structure and can be installed at a position facing the opening 11 a of the chamber 10 . The detection part 56 may be provided inside the frame 55 . The frame 55 can be set as a mini-environment (local clean environment), for example.
如上文所述,在從腔室10排出的清潔氣體G中包含粒子等異物。因此,從腔室10排出的異物有時會擴散至設置了有機膜形成裝置1的氣體環境下。若所擴散的粒子等異物到達處於有機膜形成裝置1的周邊的裝置或元件,則有產生污染或故障等之虞。另外,有時也欠佳的是作業者吸入粒子等異物或清潔氣體G。As described above, the clean gas G discharged from the chamber 10 contains foreign matter such as particles. Therefore, foreign matter discharged from the chamber 10 may diffuse into the gas environment in which the organic film forming apparatus 1 is installed. If the diffused foreign matter such as particles reaches devices or components located around the organic film forming apparatus 1, there is a risk of contamination, malfunction, or the like. In addition, it is sometimes undesirable that the operator inhales foreign matter such as particles or clean gas G.
若設置有框體55,則可抑制從腔室10排出的異物或清潔氣體G擴散至設置了有機膜形成裝置1的氣體環境下。If the frame 55 is provided, foreign matter discharged from the chamber 10 or the cleaning gas G can be suppressed from diffusing into the gas environment in which the organic film forming apparatus 1 is installed.
圖9是用於例示另一實施方式的有機膜形成裝置1a的示意立體圖。 與上文所述的清潔部50同樣地,清潔部150例如具有多個噴嘴41、氣體源52、及氣體控制部53。 另外,如圖9所示,清潔部150還可具有另一個清潔部50c。 FIG. 9 is a schematic perspective view illustrating an organic film forming apparatus 1a according to another embodiment. Like the cleaning unit 50 described above, the cleaning unit 150 includes, for example, a plurality of nozzles 41 , a gas source 52 , and a gas control unit 53 . In addition, as shown in FIG. 9 , the cleaning part 150 may also have another cleaning part 50c.
清潔部50c具有噴嘴51、氣體源52、及氣體控制部53。 如圖9所示,噴嘴51可連接於腔室10的側面。噴嘴51可在腔室10的側面設置多個。本實施方式的噴嘴51呈前端被封閉的筒狀。噴嘴51的封閉的前端延伸至與設置有噴嘴51的腔室10的側面相向的腔室10的側面。在噴嘴51的側面設置有多個噴嘴孔51a。此外,噴嘴51的數量或配置可適宜變更。例如,也可在腔室10的側面沿Y方向排列設置多個噴嘴51。也可在腔室10的相向的側面此兩者設置噴嘴51。也可設置貫通腔室10的相向的側面此兩者的噴嘴51。也可將多個噴嘴51沿X方向排列設置于蓋15。 The cleaning part 50c has a nozzle 51, a gas source 52, and a gas control part 53. As shown in FIG. 9 , the nozzle 51 may be connected to the side of the chamber 10 . A plurality of nozzles 51 may be provided on the side of the chamber 10 . The nozzle 51 of this embodiment has a cylindrical shape with a closed front end. The closed front end of the nozzle 51 extends to the side of the chamber 10 opposite to the side of the chamber 10 where the nozzle 51 is provided. A plurality of nozzle holes 51a are provided on the side of the nozzle 51 . In addition, the number or arrangement of the nozzles 51 can be appropriately changed. For example, a plurality of nozzles 51 may be arranged along the Y direction on the side surface of the chamber 10 . Nozzles 51 may also be provided on both opposite sides of the chamber 10 . A nozzle 51 may be provided that penetrates both opposing side surfaces of the chamber 10 . A plurality of nozzles 51 may be arranged on the cover 15 in the X direction.
圖10是用於例示另一實施方式的清潔部150的示意剖面圖。 如圖10所示,可將清潔氣體G從噴嘴51的噴嘴孔51a導入至腔室10內。藉由設置清潔部50c,可加強由噴嘴41形成的清潔氣體G的氣流。或者,可產生與由噴嘴41形成的清潔氣體G的氣流不同的氣流。因此,利用由噴嘴41形成的清潔氣體G的氣流無法排出的粒子被排出至腔室10的外部。因此,可大幅增加所排出的粒子的數量。這意味著可更有效果地將處於腔室10的內部的異物去除。 FIG. 10 is a schematic cross-sectional view illustrating the cleaning unit 150 according to another embodiment. As shown in FIG. 10 , the cleaning gas G can be introduced into the chamber 10 from the nozzle hole 51 a of the nozzle 51 . By providing the cleaning part 50c, the flow of the cleaning gas G formed by the nozzle 41 can be strengthened. Alternatively, a gas flow different from the gas flow of the cleaning gas G formed by the nozzle 41 may be generated. Therefore, particles that cannot be discharged by the flow of the cleaning gas G formed by the nozzle 41 are discharged to the outside of the chamber 10 . Therefore, the number of particles discharged can be greatly increased. This means that foreign matter inside the chamber 10 can be removed more effectively.
另外,在冷卻工序中,也可將冷卻氣體從清潔部50c供給至腔室內。若冷卻氣體的供給時機設為剛剛形成了有機膜後,或將腔室10的內壓恢復至大氣壓的途中,則可使冷卻時間與恢復至大氣壓的時間重疊。即,可實現實質性的冷卻時間的縮短。此外,在腔室10的內壁,附著有昇華物。因此,為了防止昇華物從腔室10的內壁剝落而流入至處理區域30a、處理區域30b的內部,來自清潔部50c的冷卻氣體的供給量優選為比來自冷卻部40的冷卻氣體的供給量少。In addition, in the cooling process, cooling gas may be supplied from the cleaning part 50c into the chamber. If the supply timing of the cooling gas is set just after the organic film is formed or during the process of returning the internal pressure of the chamber 10 to the atmospheric pressure, the cooling time can be overlapped with the time of returning to the atmospheric pressure. That is, the cooling time can be substantially shortened. In addition, sublimation material adheres to the inner wall of the chamber 10 . Therefore, in order to prevent the sublimated material from peeling off from the inner wall of the chamber 10 and flowing into the inside of the processing areas 30 a and 30 b , the supply amount of the cooling gas from the cleaning part 50 c is preferably higher than the supply amount of the cooling gas from the cooling part 40 few.
此外,在本實施方式中,在一個噴嘴51設置有多個噴嘴孔,但不限定於此。例如,一個噴嘴51中可形成一個噴嘴孔。在此情況下,噴嘴51呈在經開口的前端設置有凸緣的筒狀。而且,噴嘴51與腔室10的側面的孔氣密地連接。即,腔室10的側面的孔可作為噴嘴孔51a發揮功能。或者,在噴嘴51與設置于蓋15的孔氣密地連接的情況下,設置于蓋15的孔也可作為噴嘴孔51a發揮功能。In addition, in this embodiment, one nozzle 51 is provided with a plurality of nozzle holes, but the invention is not limited to this. For example, one nozzle hole may be formed in one nozzle 51 . In this case, the nozzle 51 has a cylindrical shape with a flange provided at the front end of the opening. Furthermore, the nozzle 51 is airtightly connected to the hole on the side of the chamber 10 . That is, the hole on the side of the chamber 10 functions as the nozzle hole 51a. Alternatively, when the nozzle 51 is airtightly connected to the hole provided in the cover 15, the hole provided in the cover 15 may function as the nozzle hole 51a.
圖11是用於例示另一實施方式的有機膜形成裝置1b的示意立體圖。 與上文所述的清潔部150同樣地,清潔部250例如具有多個噴嘴41、氣體源52、清潔部50c、及氣體控制部53。 另外,如圖11所示,清潔部250還可具有另一個冷卻部140。 FIG. 11 is a schematic perspective view illustrating an organic film forming apparatus 1 b according to another embodiment. Like the cleaning unit 150 described above, the cleaning unit 250 includes, for example, a plurality of nozzles 41 , a gas source 52 , a cleaning unit 50 c , and a gas control unit 53 . In addition, as shown in FIG. 11 , the cleaning part 250 may also have another cooling part 140 .
冷卻部140向處於處理區域30a、處理區域30b的內部的工件100供給冷卻氣體。即,冷卻部140將處於高溫狀態的工件100直接地冷卻。 冷卻部140與冷卻部40的不同之處在於,代替噴嘴41而具有噴嘴141。 The cooling unit 140 supplies cooling gas to the workpiece 100 located inside the processing areas 30a and 30b. That is, the cooling unit 140 directly cools the workpiece 100 in a high temperature state. The cooling unit 140 is different from the cooling unit 40 in that it has a nozzle 141 instead of the nozzle 41 .
噴嘴141可在處理區域30a、處理區域30b的內部設置至少一個(參照圖12)。噴嘴141例如貫通蓋15及罩36,從而可安裝於側部均熱板34d或框架31等。在本實施方式中,在可向工件100的背面供給冷卻氣體的位置安裝噴嘴141。另外,噴嘴141可在X方向上設置多個。或者,噴嘴141可設為前端被封閉的筒狀。而且,也可在噴嘴141的側面設置多個孔,並從腔室10的側面插入。At least one nozzle 141 may be provided inside the processing areas 30a and 30b (see FIG. 12 ). For example, the nozzle 141 penetrates the cover 15 and the cover 36, and can be attached to the side vapor chamber 34d, the frame 31, etc. In this embodiment, the nozzle 141 is installed at a position where cooling gas can be supplied to the back surface of the workpiece 100 . In addition, a plurality of nozzles 141 may be provided in the X direction. Alternatively, the nozzle 141 may have a cylindrical shape with a closed front end. Furthermore, a plurality of holes may be provided on the side of the nozzle 141 and inserted from the side of the chamber 10 .
在冷卻工序中,從噴嘴141相對于工件100平行地噴出冷卻氣體。此外,在圖12中,門13成為打開的狀態,但在接下來敘述的冷卻工序中,門13成為關閉的狀態。從噴嘴141相對於工件100的背面(即,由支撐部33支撐的面)大致平行地供給冷卻氣體。由此,工件100與支撐部33之間充滿冷卻氣體,從而可將工件100直接地冷卻。另外,從噴嘴141供給並經由工件100的背面的冷卻氣體從未圖示的排出口被排出至腔室10外。排出口在腔室10的頂棚部分設置多個(例如四個)。當在冷卻工序中向腔室10供給冷卻氣體時,腔室10內的熱向腔室10的上方移動,因此可藉由設置於頂棚部分的排出口有效率地進行排熱。進而,藉由從多個噴嘴141中位於腔室10內的下方側的噴嘴141依序供給冷卻氣體,而在腔室10內形成向腔室10的頂棚側的氣流。由此,可效率良好地從排出口排出腔室10內的粒子。In the cooling process, the cooling gas is ejected from the nozzle 141 in parallel with the workpiece 100 . In addition, in FIG. 12 , the door 13 is in an open state, but in the cooling process described next, the door 13 is in a closed state. The cooling gas is supplied from the nozzle 141 substantially parallel to the back surface of the workpiece 100 (that is, the surface supported by the support portion 33 ). Thereby, the space between the workpiece 100 and the support part 33 is filled with cooling gas, so that the workpiece 100 can be cooled directly. In addition, the cooling gas supplied from the nozzle 141 and passed through the back surface of the workpiece 100 is discharged out of the chamber 10 through a discharge port (not shown). A plurality of (for example, four) discharge outlets are provided in the ceiling portion of the chamber 10 . When the cooling gas is supplied to the chamber 10 in the cooling process, the heat in the chamber 10 moves upwards of the chamber 10 , so the heat can be efficiently discharged through the exhaust port provided in the ceiling portion. Furthermore, by sequentially supplying the cooling gas from the nozzle 141 located on the lower side in the chamber 10 among the plurality of nozzles 141 , an air flow toward the ceiling side of the chamber 10 is formed in the chamber 10 . Thereby, the particles in the chamber 10 can be efficiently discharged from the discharge port.
此處,當開始冷卻工序時,藉由供給冷卻氣體,比大氣壓低的腔室10的內壓逐漸接近大氣壓。此時,若腔室10的內壓急劇接近大氣壓,則被支撐部33支撐的工件100會因壓力變動而移動,而與支撐部33摩擦從而產生粒子。因此,首先,在冷卻工序開始後,在腔室10的內壓成為規定壓力之前的期間,僅從噴嘴41供給冷卻氣體,將工件100間接地冷卻。從噴嘴41供給的冷卻氣體不直接供給至工件100,而是供給至均熱部34。由此,腔室10的內壓在避免工件100附近的壓力急劇變化的同時逐漸上升。其後,在腔室10的內壓成為規定壓力後,也從噴嘴141供給冷卻氣體,而將工件100直接冷卻。規定壓力是工件100不會因從噴嘴141供給冷卻氣體引起的壓力變動而移動的壓力,且預先藉由實驗等求出。從噴嘴141供給冷卻氣體是在腔室10的內壓以某種程度上升之後,因此工件100不會因壓力變動而移動。由此,可有效果地抑制由工件100與支撐部33摩擦而產生粒子。Here, when the cooling process is started, the internal pressure of the chamber 10, which is lower than the atmospheric pressure, gradually approaches the atmospheric pressure by supplying the cooling gas. At this time, if the internal pressure of the chamber 10 suddenly approaches the atmospheric pressure, the workpiece 100 supported by the support portion 33 will move due to the pressure change, and will rub against the support portion 33 to generate particles. Therefore, first, after the cooling process is started, until the internal pressure of the chamber 10 reaches a predetermined pressure, only the cooling gas is supplied from the nozzle 41 to indirectly cool the workpiece 100 . The cooling gas supplied from the nozzle 41 is not directly supplied to the workpiece 100 but is supplied to the heat equalizing part 34 . Thereby, the internal pressure of the chamber 10 gradually increases while avoiding a sudden change in the pressure near the workpiece 100 . Thereafter, after the internal pressure of the chamber 10 reaches a predetermined pressure, the cooling gas is also supplied from the nozzle 141 to directly cool the workpiece 100 . The predetermined pressure is a pressure at which the workpiece 100 does not move due to pressure fluctuation caused by the supply of cooling gas from the nozzle 141, and is determined in advance through experiments or the like. The cooling gas is supplied from the nozzle 141 after the internal pressure of the chamber 10 rises to a certain extent, so the workpiece 100 does not move due to pressure changes. This can effectively suppress the generation of particles caused by friction between the workpiece 100 and the support portion 33 .
另外,也可在腔室10的開口11a側端部設置多個從腔室10的底面向頂棚吹出空氣的未圖示的噴嘴。若如此,則可形成從腔室10的底面向頂棚的氣流,因此可將被噴嘴141及噴嘴41吹走的粒子有效率地搬運至排出口並排出。此外,由所述未圖示的噴嘴形成的氣流還發揮作為在門13打開時防止粒子從腔室10外侵入的氣簾的作用。In addition, a plurality of nozzles (not shown) that blow air from the bottom of the chamber 10 to the ceiling may be provided at the end of the chamber 10 on the opening 11a side. In this case, an airflow can be formed from the bottom of the chamber 10 to the ceiling, so the particles blown away by the nozzle 141 and the nozzle 41 can be efficiently transported to the discharge port and discharged. In addition, the air flow formed by the nozzle (not shown) also functions as an air curtain that prevents particles from intruding from outside the chamber 10 when the door 13 is opened.
此外,也可設置多個從腔室10的頂棚向底面吹出空氣的未圖示的噴嘴。而且,在作為氣簾使用時(門13打開時),也可形成從腔室10的頂棚向底面的氣流。在此情況下,可形成空氣沿與有機膜形成裝置1的所設置的潔淨室內的下降流(down flow)相同的方向流動的氣簾,因此可更有效果地防止粒子向腔室10內侵入。In addition, a plurality of nozzles (not shown) that blow air from the ceiling to the bottom of the chamber 10 may be provided. Furthermore, when used as an air curtain (when the door 13 is opened), an airflow can be formed from the ceiling to the bottom of the chamber 10 . In this case, an air curtain can be formed in which air flows in the same direction as the downflow in the clean room in which the organic film forming apparatus 1 is installed. Therefore, particles can be more effectively prevented from intruding into the chamber 10 .
另外,從腔室10的底面向頂棚吹出空氣的未圖示的噴嘴不僅可設置於開口11a側,也可設置于蓋15側。從冷卻噴嘴141噴出的冷卻氣體在被噴出之後經由工件100的背面進入門13側,並且流速逐漸減速。冷卻氣體及門13碰撞,在與蓋15側碰撞時,冷卻氣體的流速變得相當慢,冷卻氣體容易在蓋15側的壁面上滯留。於是,成為在蓋15側的壁面上附著有粒子的狀態,從而附著于所述蓋15側壁面的粒子附著於接下來要處理的工件。藉由設置沿著蓋15側的壁面從腔室10的底面向頂棚吹出空氣的噴嘴,可將附著於壁面的粒子有效率地從排出口排出。In addition, a nozzle (not shown) that blows air from the bottom of the chamber 10 to the ceiling may be provided not only on the opening 11a side but also on the cover 15 side. The cooling gas ejected from the cooling nozzle 141 enters the door 13 side through the back surface of the workpiece 100 after being ejected, and the flow rate gradually decelerates. When the cooling gas collides with the door 13 and the cover 15 side, the flow rate of the cooling gas becomes very slow, and the cooling gas tends to remain on the wall surface on the cover 15 side. Then, the particles adhere to the wall surface on the cover 15 side, and the particles adhered to the wall surface on the cover 15 side adhere to the workpiece to be processed next. By providing a nozzle for blowing air from the bottom to the ceiling of the chamber 10 along the wall surface on the cover 15 side, particles adhering to the wall surface can be efficiently discharged from the discharge port.
在將工件100間接及直接地冷卻的情況下,在冷卻工序中,從冷卻部40及冷卻部140供給冷卻氣體。即,可使用冷卻部140的噴嘴141將工件100直接地冷卻。由此,可實現實質性的冷卻時間的縮短。When the workpiece 100 is cooled indirectly or directly, cooling gas is supplied from the cooling part 40 and the cooling part 140 in the cooling process. That is, the workpiece 100 can be directly cooled using the nozzle 141 of the cooling unit 140 . As a result, the cooling time can be substantially shortened.
圖12是用於例示另一實施方式的清潔部250的示意剖面圖。 藉由設置冷卻部140,可還從噴嘴141向處理區域30a、處理區域30b的內部供給清潔氣體G。因此,可加強由噴嘴41形成的清潔氣體G的氣流。因此,利用由噴嘴41形成的清潔氣體G的氣流無法排出的粒子被排出至腔室10的外部。因此,可大幅增加所排出的粒子的數量。這意味著可更有效果地將處於腔室10的內部的異物去除。 FIG. 12 is a schematic cross-sectional view illustrating the cleaning unit 250 according to another embodiment. By providing the cooling unit 140, the cleaning gas G can be supplied from the nozzle 141 to the inside of the processing areas 30a and 30b. Therefore, the flow of the cleaning gas G formed by the nozzle 41 can be strengthened. Therefore, particles that cannot be discharged by the flow of the cleaning gas G formed by the nozzle 41 are discharged to the outside of the chamber 10 . Therefore, the number of particles discharged can be greatly increased. This means that foreign matter inside the chamber 10 can be removed more effectively.
如以上所說明那樣,本實施方式的有機膜形成裝置的清潔方法是具有腔室10的有機膜形成裝置的清潔方法,所述腔室10具有搬入或搬出工件100的開口11a,能夠維持較大氣壓進一步經減壓的氣體環境。 在本實施方式的有機膜形成裝置的清潔方法中,在將腔室10的開口11a開放時,在腔室10的內部形成向腔室10的開口11a流動的清潔氣體G的流動。 As explained above, the cleaning method of the organic film forming apparatus of this embodiment is a cleaning method of the organic film forming apparatus provided with the chamber 10 which has the opening 11a for loading or unloading the workpiece 100, and can maintain a large air pressure. Further decompressed gas environment. In the cleaning method of the organic film forming apparatus of this embodiment, when the opening 11 a of the chamber 10 is opened, a flow of the cleaning gas G flowing toward the opening 11 a of the chamber 10 is formed inside the chamber 10 .
另外,藉由從多個噴嘴41依次供給清潔氣體G,而形成清潔氣體G的流動。In addition, the flow of the cleaning gas G is formed by sequentially supplying the cleaning gas G from the plurality of nozzles 41 .
另外,在從腔室10的開口11a排出的清潔氣體G中所含的異物的數量為規定值以下的情況下,停止清潔氣體G的流動的形成。 在形成向腔室10的開口11a流動的清潔氣體G的流動時,工件100未被支撐於腔室10的內部。 In addition, when the number of foreign matter contained in the cleaning gas G discharged from the opening 11 a of the chamber 10 is less than a predetermined value, the formation of the flow of the cleaning gas G is stopped. When the flow of the cleaning gas G flowing toward the opening 11 a of the chamber 10 is formed, the workpiece 100 is not supported inside the chamber 10 .
另外,也可藉由從多個噴嘴51、或多個噴嘴141或者此兩者依次供給清潔氣體G,而加強藉由從多個噴嘴41依次供給清潔氣體G而形成的清潔氣體G的流動。或者,也可藉由從多個噴嘴51、或多個噴嘴141或者此兩者依次供給清潔氣體G,而形成與藉由從多個噴嘴41依次供給清潔氣體G而形成的清潔氣體G的流動不同的流動。In addition, the flow of the cleaning gas G formed by sequentially supplying the cleaning gas G from the plurality of nozzles 41 may be strengthened by sequentially supplying the cleaning gas G from the plurality of nozzles 51 , the plurality of nozzles 141 , or both. Alternatively, the flow of the cleaning gas G formed by sequentially supplying the cleaning gas G from the plurality of nozzles 41 may also be formed by sequentially supplying the cleaning gas G from the plurality of nozzles 51 , the plurality of nozzles 141 , or both. Different flows.
以上,對實施方式進行了例示。但是,本發明並不限定於這些記述。 本領域技術人員對上文所述的實施方式適宜施加設計變更而得的實施方式也只要具備本發明的特徵,則包含于本發明的範圍。 例如,有機膜形成裝置1的形狀、尺寸、配置等不限定於例示,可適宜變更。 另外,上文所述的各實施方式所包括的各元件可盡可能地組合,將這些組合而得的實施方式也只要具備本發明的特徵,則包含于本發明的範圍。 The embodiments have been illustrated above. However, the present invention is not limited to these descriptions. Embodiments in which those skilled in the art make appropriate design changes to the above-described embodiments are included in the scope of the present invention as long as they have the characteristics of the present invention. For example, the shape, size, arrangement, etc. of the organic film forming device 1 are not limited to the examples and can be changed appropriately. In addition, each element included in each embodiment described above can be combined as much as possible, and the embodiment obtained by combining these is included in the scope of the present invention as long as it has the characteristics of the present invention.
1、1a、1b:有機膜形成裝置 10:腔室 11、14:凸緣 11a:開口 12:密封材 13:門(開閉門) 15:蓋 16、40、140:冷卻部 17、18:排氣口 20:排氣部 21:第一排氣部 21a、22a:排氣泵 21b:壓力控制部 22:第二排氣部 22b:壓力控制部 23:第三排氣部 24:冷阱 25:閥 30:處理部 30a、30b:處理區域 31:框架 32:加熱部 32a:加熱器 32b:固持器 33:支撐部 34:均熱部 34a:上部均熱板 34b:下部均熱板 34c、34d:側部均熱板 35:均熱板支撐部 36:罩 40a:第一氣體供給路徑 40b:第二氣體供給路徑 41、51:噴嘴 42、52:氣體源 43、53:氣體控制部 50、50a、50b、50c、150、250:清潔部 51a:噴嘴孔 54:切換閥 55:框體 56:檢測部 60:控制器 100:工件(基板) 141:噴嘴(冷卻噴嘴) G:清潔氣體 X、Y、Z:方向 1, 1a, 1b: Organic film forming device 10: Chamber 11, 14: Flange 11a: Open your mouth 12:Sealing material 13: Door (open and close door) 15: cover 16, 40, 140: cooling department 17, 18: Exhaust port 20:Exhaust part 21:First exhaust part 21a, 22a: exhaust pump 21b: Pressure control department 22:Second exhaust part 22b: Pressure control department 23:Third exhaust part 24:cold trap 25:Valve 30:Processing Department 30a, 30b: processing area 31:Frame 32:Heating part 32a: heater 32b: holder 33: Support part 34: Uniform heating section 34a: Upper vapor chamber 34b:Lower vapor chamber 34c, 34d: Side vapor chamber 35:Vapor chamber support part 36:hood 40a: First gas supply path 40b: Second gas supply path 41, 51: Nozzle 42, 52: Gas source 43, 53: Gas control department 50, 50a, 50b, 50c, 150, 250: Cleaning Department 51a:Nozzle hole 54:Switching valve 55:frame 56:Testing Department 60:Controller 100: Workpiece (substrate) 141:Nozzle (cooling nozzle) G: clean gas X, Y, Z: direction
圖1是用於例示本實施方式的有機膜形成裝置的示意立體圖。 圖2是用於例示工件的處理工序的圖表。 圖3是用於例示清潔部的作用的示意剖面圖。 圖4是將利用排氣部的粒子的排出與利用清潔部的粒子的排出進行組合時的圖表。 圖5是僅進行了利用清潔部的粒子的排出時的圖表。 圖6是僅進行了利用清潔部的粒子的排出時的圖表。 圖7是用於例示另一實施方式的清潔部的示意剖面圖。 圖8是用於例示另一實施方式的清潔部的示意剖面圖。 圖9是用於例示另一實施方式的有機膜形成裝置的示意立體圖。 圖10是用於例示另一實施方式的清潔部的示意剖面圖。 圖11是用於例示另一實施方式的有機膜形成裝置的示意立體圖。 圖12是用於例示另一實施方式的清潔部的示意剖面圖。 FIG. 1 is a schematic perspective view illustrating the organic film forming apparatus according to this embodiment. FIG. 2 is a diagram illustrating a workpiece processing step. 3 is a schematic cross-sectional view illustrating the function of the cleaning unit. FIG. 4 is a graph showing a combination of particle discharge by the exhaust unit and particle discharge by the cleaning unit. FIG. 5 is a graph when only particles are discharged by the cleaning part. FIG. 6 is a graph when only particles are discharged by the cleaning part. 7 is a schematic cross-sectional view illustrating a cleaning unit according to another embodiment. 8 is a schematic cross-sectional view illustrating a cleaning unit according to another embodiment. 9 is a schematic perspective view illustrating an organic film forming apparatus according to another embodiment. FIG. 10 is a schematic cross-sectional view illustrating a cleaning unit according to another embodiment. FIG. 11 is a schematic perspective view illustrating an organic film forming apparatus according to another embodiment. FIG. 12 is a schematic cross-sectional view illustrating a cleaning unit according to another embodiment.
10:腔室 10: Chamber
11:凸緣 11:Flange
11a:開口 11a: Open your mouth
13:門(開閉門) 13: Door (open and close door)
16:冷卻部 16: Cooling department
20:排氣部 20:Exhaust part
32:加熱部 32:Heating part
36:罩 36:hood
41:噴嘴 41:Nozzle
50:清潔部 50:Cleaning Department
G:清潔氣體 G: clean gas
X、Y、Z:方向 X, Y, Z: direction
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