KR20240037924A - Organic film formation apparatus and cleaning method of organic film formation apparatus - Google Patents

Abstract

The present invention enables sufficient removal of foreign matter inside the chamber. The object is to provide an organic film forming apparatus and a cleaning method of the organic film forming apparatus.
An organic film forming apparatus according to an embodiment includes a chamber that has an opening for loading or unloading a workpiece and can maintain an atmosphere lower than atmospheric pressure, a door that can open and close the opening of the chamber, and exhausting the inside of the chamber. an exhaust part capable of heating the workpiece, a support part installed inside the chamber and capable of supporting the workpiece, a heating part installed inside the chamber and capable of heating the workpiece, and a support part installed inside the chamber and has at least one nozzle capable of supplying cleaning gas toward the opening of the chamber.

Description

Organic film forming apparatus, and cleaning method of the organic film forming apparatus {ORGANIC FILM FORMATION APPARATUS AND CLEANING METHOD OF ORGANIC FILM FORMATION APPARATUS}

Embodiments of the present invention relate to an organic film forming apparatus and a cleaning method of the organic film forming apparatus.

The organic film forming apparatus includes, for example, a chamber capable of maintaining an atmosphere of reduced pressure than atmospheric pressure, and a heater installed inside the chamber to heat the workpiece. This organic film forming apparatus forms an organic film by heating a substrate coated with a solution containing an organic material and a solvent in an atmosphere lower than atmospheric pressure and evaporating the solvent contained in the solution (e.g., Patent Document 1 (see ).

Here, when the solution is heated, substances contained in the solution may sublime (vaporize). Components contained in the sublimated product may become solid and adhere to the inner walls of chambers where the temperature is lower than that of the heated workpiece. If solids attached to the inner walls of the chamber, etc. are separated from the inner walls of the chamber, there is a risk that they may form foreign substances such as particles and adhere to the surface of the workpiece.

Therefore, cleaning is performed to remove solids attached to the inner walls of the chamber, etc., periodically or as needed. For example, in a technical field different from an organic film forming apparatus, such as a semiconductor manufacturing apparatus, the inside of the chamber is sequentially performed in a sealed state to exhaust the inside of the chamber and supply a cleaning gas to the inside of the chamber. A technology for discharging foreign substances in is proposed (see Patent Document 2).

However, in the organic film forming apparatus, even if the same cleaning as in the semiconductor manufacturing apparatus is performed (e.g., cleaning by sequentially exhausting the inside of the chamber and supplying cleaning gas into the inside of the chamber in a sealed state), It was found that the foreign matter could not be sufficiently removed.

Therefore, there has been a demand for the development of an organic film forming device that can sufficiently remove foreign substances such as particles inside the chamber, and a cleaning method for the organic film forming device.

[Patent Document 1] Japanese Patent Publication No. 2019-184229 [Patent Document 2] Japanese Patent Publication No. 2002-184708

The problem to be solved by the present invention is to provide an organic film forming apparatus capable of sufficiently removing foreign substances inside the chamber, and a cleaning method of the organic film forming apparatus.

An organic film forming apparatus according to an embodiment includes a chamber that has an opening for loading or unloading a workpiece and can maintain an atmosphere lower than atmospheric pressure, a door that can open and close the opening of the chamber, and exhausting the inside of the chamber. an exhaust part capable of heating the workpiece, a support part installed inside the chamber and capable of supporting the workpiece, a heating part installed inside the chamber and capable of heating the workpiece, and a support part installed inside the chamber and has at least one nozzle capable of supplying cleaning gas toward the opening of the chamber.

According to an embodiment of the present invention, an organic film forming apparatus capable of sufficiently removing foreign matter inside the chamber and a cleaning method of the organic film forming apparatus are provided.

1 is a schematic perspective view illustrating an organic film forming apparatus according to this embodiment.
Figure 2 is a graph illustrating the processing process of a workpiece.
Figure 3 is a schematic cross-sectional view illustrating the operation of the cleaning unit.
Figure 4 is a graph when the emission of particles by the exhaust unit and the emission of particles by the cleaning unit are combined.
Figure 5 is a graph when only particles are discharged by the cleaning unit.
Figure 6 is a graph when only particles are discharged by the cleaning unit.
Figure 7 is a schematic cross-sectional view illustrating a cleaning unit according to another embodiment.
Figure 8 is a schematic cross-sectional view illustrating a cleaning unit according to another embodiment.
Figure 9 is a schematic perspective view illustrating an organic film forming apparatus according to another embodiment.
Figure 10 is a schematic cross-sectional view illustrating a cleaning unit according to another embodiment.
Figure 11 is a schematic perspective view illustrating an organic film forming apparatus according to another embodiment.
Figure 12 is a schematic cross-sectional view illustrating a cleaning unit according to another embodiment.

Hereinafter, embodiments will be illustrated with reference to the drawings. In addition, in each drawing, like components are given the same reference numerals and detailed descriptions are omitted as appropriate.

1 is a schematic perspective view illustrating the organic film forming apparatus 1 according to this embodiment.

Additionally, the X direction, Y direction, and Z direction in FIG. 1 represent three directions that are orthogonal to each other. The vertical direction in this specification can be the Z direction.

The workpiece 100 before forming the organic film has a substrate and a solution applied to the upper surface of the substrate.

The substrate can be, for example, a glass substrate or a semiconductor wafer. However, the substrate is not limited to those illustrated.

The solution includes, for example, an organic material and a solvent. The organic material is not particularly limited as long as it can be dissolved in a solvent. The solution can be, for example, a varnish containing polyamic acid. However, the solution is not limited to those illustrated.

As shown in FIG. 1, the organic film forming apparatus 1 includes, for example, a chamber 10, an exhaust unit 20, a processing unit 30, a cooling unit 40, a cleaning unit 50, and a controller ( 60) is installed.

The controller 60 includes, for example, a calculation unit such as a CPU (Central Processing Unit) and a storage unit such as a memory. The controller 60 can be, for example, a computer. The controller 60 controls the operation of each element installed in the organic film forming apparatus 1 based on the control program stored in the storage unit.

The chamber 10 has an airtight structure that can maintain an atmosphere with pressure lower than atmospheric pressure. The chamber 10 has a box shape. There is no particular limitation on the external shape of the chamber 10. The external shape of the chamber 10 can be, for example, a rectangular parallelepiped. The chamber 10 can be formed of, for example, metal such as stainless steel.

In the Y direction, a flange 11 can be formed at one end of the chamber 10. A sealing material 12 such as an O-ring can be installed on the flange 11. The opening 11a of the chamber 10 on the side where the flange 11 is formed can be opened and closed by the door 13. The door 13 is pressed against the flange 11 (seal material 12) by a drive device (not shown), so that the opening 11a of the chamber 10 is closed so as to be airtight. By separating the door 13 from the flange 11 by a driving device (not shown), the opening 11a of the chamber 10 is opened, allowing the loading or unloading of the workpiece 100 through the opening 11a. It becomes. Additionally, by opening the opening 11a of the chamber 10, cleaning by the cleaning unit 50, which will be described later, becomes possible.

That is, the chamber 10 has an opening 11a through which the workpiece 100 is loaded or unloaded, and is capable of maintaining an atmosphere whose pressure is reduced from atmospheric pressure. The door 13 is capable of opening and closing the opening 11a of the chamber 10.

In the Y direction, a flange 14 may be formed at the other end of the chamber 10. A seal material 12 such as an O-ring can be installed on the flange 14. The opening of the chamber 10 on the side where the flange 14 is formed can be opened and closed by the cover 15. For example, the cover 15 can be detachably attached to the flange 14 using a fastening member such as a screw. When performing maintenance or the like, the cover 15 is removed to expose the opening of the chamber 10 on the side where the flange 14 is formed.

A cooling unit 16 may be installed on the outer wall of the chamber 10 and the outer surface of the door 13. A cooling water supply unit (not shown) is connected to the cooling unit 16. The cooling unit 16 can be, for example, a water jacket. If the cooling unit 16 is provided, the temperature of the outer wall of the chamber 10 or the temperature of the outer surface of the door 13 can be suppressed from becoming higher than a predetermined temperature.

The exhaust unit 20 exhausts the interior of the chamber 10. The exhaust section 20 has, for example, a first exhaust section 21, a second exhaust section 22, and a third exhaust section 23.

The first exhaust portion 21 is connected to an exhaust port 17 formed on the bottom surface of the chamber 10, for example.

The first exhaust unit 21 has, for example, an exhaust pump 21a and a pressure control unit 21b.

The exhaust pump 21a can be an exhaust pump that performs rough exhaust from atmospheric pressure to a predetermined pressure. Therefore, the exhaust pump 21a has a larger exhaust volume than the exhaust pump 22a, which will be described later. The exhaust pump 21a can be, for example, a dry vacuum pump.

The pressure control unit 21b is installed, for example, between the exhaust port 17 and the exhaust pump 21a. The pressure control unit 21b controls the internal pressure of the chamber 10 to be a predetermined pressure based on the output of a vacuum gauge (not shown) that detects the internal pressure of the chamber 10. The pressure control unit 21b can be, for example, an automatic pressure controller (APC: Auto Pressure Controller).

Additionally, a cold trap 24 is installed between the exhaust port 17 and the pressure control unit 21b to trap the exhausted sublimated material. Additionally, a valve 25 is installed between the exhaust port 17 and the cold trap 24. The valve 25 serves to prevent the fluid 101 from flowing into the cold trap 24 in a cooling process to be described later.

The second exhaust portion 22 is connected to, for example, an exhaust port 18 formed on the bottom surface of the chamber 10.

The second exhaust unit 22 has, for example, an exhaust pump 22a and a pressure control unit 22b.

The exhaust pump 22a performs exhaust to a lower predetermined pressure after rough exhaust by the exhaust pump 21a. The exhaust pump 22a has an exhaust capability capable of exhausting, for example, a high vacuum molecular flow region. For example, the exhaust pump 22a can be a turbo molecular pump (TMP) or the like.

The pressure control unit 22b is installed, for example, between the exhaust port 18 and the exhaust pump 22a. The pressure control unit 22b controls the internal pressure of the chamber 10 to be a predetermined pressure based on the output of a vacuum gauge (not shown) that detects the internal pressure of the chamber 10. The pressure control unit 22b can be, for example, APC. Additionally, a cold trap 24 and a valve 25 can be installed between the exhaust port 18 and the pressure control unit 22b, similar to the first exhaust unit 21.

In addition, in the above, the case where the exhaust port 17 and the exhaust port 18 are formed on the bottom surface of the chamber 10 is exemplified, but the exhaust port 17 and the exhaust port 18 are, for example, formed on the ceiling surface of the chamber 10. It can also be formed in . When the exhaust port 17 and the exhaust port 18 are formed on the bottom or ceiling of the chamber 10, an airflow is formed inside the chamber 10 toward the bottom or ceiling of the chamber 10. can do.

Here, when the workpiece 100 to which a solution containing an organic material and a solvent is applied is heated, the substances contained in the solution may sublimate (vaporize). Components contained in the sublimated product may become solid and adhere to the inner wall of the chamber 10, etc., where the temperature is lower than that of the heated workpiece 100. If the solid attached to the inner wall of the chamber 10, etc. is peeled off from the inner wall of the chamber 10, there is a risk that it may form foreign matter such as particles and adhere to the surface of the workpiece 100.

In this case, when an air current toward the floor or ceiling of the chamber 10 is formed inside the chamber 10, foreign substances such as sublimated matter or particles are carried by the air current and discharged to the outside of the chamber 10. It gets easier. Therefore, it is possible to prevent foreign substances such as particles from adhering to the workpiece 100.

The processing unit 30 has, for example, a frame 31, a heating unit 32, a support unit 33, a cracking unit 34, a cracking plate support unit 35, and a cover 36.

Inside the processing unit 30, a processing area 30a and a processing area 30b are formed. The processing areas 30a and 30b are spaces where the workpiece 100 is processed. The workpiece 100 is supported inside the processing areas 30a and 30b. The processing area 30b is formed above the processing area 30a. In addition, a case in which two processing areas are formed is exemplified, but it is not limited to this. Only one processing area may be formed, or three or more processing areas may be formed. In this embodiment, a case in which two processing areas are formed is exemplified as an example, but cases in which one processing area and three or more processing areas are formed are equally conceivable.

The processing areas 30a and 30b are formed between the heating unit 32 and the heating unit 32 . The treatment areas 30a and 30b are surrounded by cracked portions 34 (upper cracked plate 34a, lower cracked plate 34b, side cracked plate 34c, and side cracked plate 34d).

As will be described later, the upper crack plate 34a and the lower crack plate 34b are formed by supporting a plurality of plate-shaped members by a plurality of crack plate supports 35. For this reason, the processing area 30a and the space inside the chamber 10 are connected through gaps formed between the upper tempering plates 34a and the lower tempering plates 34b. In addition, there is a gap between the upper crack plate 34a (lower crack plate 34b) and the side crack plate 34c, and between the upper crack plate 34a (lower crack plate 34b) and the side crack plate 34d. This is formed. Therefore, when the pressure of the space between the inner wall of the chamber 10 and the processing unit 30 is reduced, the space inside the processing area 30a is also depressurized. In addition, since the processing area 30b has the same structure as the processing area 30a, description is omitted.

When the pressure of the space between the inner wall of the chamber 10 and the processing unit 30 is reduced, heat emitted to the outside from the processing areas 30a and 30b can be suppressed. In other words, heating efficiency and heat storage efficiency can be improved. Therefore, the power applied to the heater 32a, which will be described later, can be reduced. Additionally, if the power applied to the heater 32a can be reduced, the temperature of the heater 32a can be suppressed from exceeding a predetermined temperature, and the lifespan of the heater 32a can be extended.

Additionally, because heat storage efficiency is improved, the temperature of the processing areas 30a and 30b can be quickly raised. Therefore, it becomes possible to cope with processing that requires a rapid increase in temperature. Additionally, since the temperature of the outer wall of the chamber 10 can be suppressed from increasing, the cooling unit 16 can be made simple.

The frame 31 has a frame structure including long thin plates, section steel, etc. The external shape of the frame 31 may be the same as that of the chamber 10. The external shape of the frame 31 can be, for example, a rectangular parallelepiped.

A plurality of heating units 32 are installed. The heating unit 32 can be installed below the processing areas 30a and 30b and above the processing areas 30a and 30b. The heating unit 32 installed below the processing areas 30a and 30b serves as a lower heating unit. The heating unit 32 installed at the upper part of the processing areas 30a and 30b serves as an upper heating unit. The lower heating unit faces the upper heating unit. Additionally, when a plurality of processing areas are formed to overlap in the vertical direction, the upper heating unit installed in the lower processing area can be used concurrently with the lower heating unit installed in the upper processing area.

The heating unit 32 is installed inside the chamber 10 and heats the workpiece 100.

For example, the lower surface (back surface) of the workpiece 100 supported in the processing area 30a is heated by the heating unit 32 installed at the lower part of the processing area 30a. The upper surface (surface) of the workpiece 100 supported in the processing region 30a is heated by the heating unit 32 that is used both by the processing region 30a and the processing region 30b.

The lower surface (back surface) of the workpiece 100 supported in the processing area 30b is heated by the heating unit 32 that is used both by the processing area 30a and the processing area 30b. The upper surface (surface) of the workpiece 100 supported in the processing area 30b is heated by the heating unit 32 installed at the upper part of the processing area 30b.

In this way, since the number of heating units 32 can be reduced, power consumption can be reduced, manufacturing costs can be reduced, space can be saved, etc.

Each of the plurality of heating units 32 has at least one heater 32a and a pair of holders 32b. In addition, below, a case where a plurality of heaters 32a are installed will be described.

The heater 32a has a rod shape and extends in the Y direction between a pair of holders 32b. A plurality of heaters 32a can be installed side by side in the X direction. The plurality of heaters 32a can be installed at equal intervals, for example. The heater 32a can be, for example, a sheath heater, far-infrared heater, far-infrared lamp, ceramic heater, cartridge heater, etc. Additionally, various heaters can be covered with quartz covers.

In addition, in this specification, various heaters covered with a quartz cover are also referred to as “rod-type heaters.” In addition, there is no limitation to the cross-sectional shape of “rod shape,” and for example, cylindrical shape, prismatic shape, etc. are also included.

In addition, the heater 32a is not limited to those illustrated. The heater 32a may be any one capable of heating the workpiece 100 in an atmosphere with pressure reduced from atmospheric pressure. In other words, the heater 32a may be one that uses heat energy by radiation.

The specifications, number, and spacing of the plurality of heaters 32a in the upper heating unit and the lower heating unit can be appropriately determined depending on the composition of the solution to be heated (solution heating temperature), the size of the workpiece 100, etc. The specifications, number, spacing, etc. of the plurality of heaters 32a can be appropriately determined by performing simulations, experiments, etc.

In addition, the space where the plurality of heaters 32a are installed is surrounded by the holder 32b, the upper crack plate 34a, the lower crack plate 34b, the side crack plate 34c, and the side crack plate 34d. . A gap is formed between the upper crack plates 34a and between the lower crack plates 34b. Therefore, a part of the cooling gas supplied to the space where the plurality of heaters 32a is installed flows from the cooling unit 40, which will be described later, into the processing area 30a or the processing area 30b. However, the space where the plurality of heaters 32a are installed can be regarded as a substantially closed space. Therefore, by supplying cooling gas from the cooling unit 40 to the space where the plurality of heaters 32a are installed, the plurality of heaters 32a, the upper cracking plate 34a, the lower cracking plate 34b, and the side cracking plate 34c ), and the side crack plate (34d) can be cooled.

The pair of holders 32b extends in the X direction (eg, the longitudinal direction of the processing areas 30a and 30b). A pair of holders 32b face each other in the Y direction. One holder 32b is fixed to the end surface of the frame 31 on the door 13 side. The other holder 32b is fixed to the end surface of the frame 31 opposite to the door 13 side. The pair of holders 32b can be fixed to the frame 31 using fastening members such as screws, for example. A pair of holders 32b hold a non-heating portion near the end of the heater 32a. The pair of holders 32b can be formed of, for example, a long, thin metal plate or section steel. There is no particular limitation on the material of the pair of holders 32b, but it is preferable to use a material having heat resistance and corrosion resistance. The material of the pair of holders 32b can be, for example, stainless steel.

The support portion 33 is installed inside the chamber 10 and supports the workpiece 100. For example, the support portion 33 supports the workpiece 100 between the upper heating portion and the lower heating portion. Multiple support portions 33 can be installed. The plurality of support parts 33 are installed below the processing area 30a and below the processing area 30b. The plurality of support portions 33 can be made into rod-shaped bodies.

One end (upper end) of the plurality of support portions 33 contacts the lower surface (back surface) of the workpiece 100. Therefore, it is preferable that the shape of one end of the plurality of support portions 33 is hemispherical or the like. If the shape of one end of the plurality of support portions 33 is hemispherical, damage to the lower surface of the workpiece 100 can be prevented. Additionally, since the contact area between the lower surface of the workpiece 100 and the plurality of support portions 33 can be reduced, heat transmitted from the workpiece 100 to the plurality of support portions 33 can be reduced.

Since the workpiece 100 is heated by radiation-generated heat energy in an atmosphere of reduced pressure than atmospheric pressure, the distance from the upper heating unit to the upper surface of the workpiece 100 and the distance from the lower heating unit to the lower surface of the workpiece 100 The distance is the distance at which heat energy by radiation can reach the workpiece 100.

The other end (lower end) of the plurality of supports 33 can be fixed to, for example, a plurality of rod-shaped members or plate-shaped members arranged between the pair of frames 31. In this case, it is preferable that the plurality of support portions 33 are detachably installed on a rod-shaped member or the like. In this way, work such as maintenance becomes easier.

The number, arrangement, spacing, etc. of the plurality of support parts 33 can be appropriately changed depending on the size, rigidity (bending), etc. of the workpiece 100.

There is no particular limitation on the material of the plurality of support portions 33, but it is preferable to use a material having heat resistance and corrosion resistance. The material of the plurality of supports 33 can be, for example, stainless steel or the like.

The crack portion 34 has a plurality of upper crack plates 34a, a plurality of lower crack plates 34b, a plurality of side crack plates 34c, and a plurality of side crack plates 34d. The plurality of upper cracked plates 34a, the plurality of lower cracked plates 34b, the plurality of side cracked plates 34c, and the plurality of side cracked plates 34d have a plate shape.

The plurality of upper heating plates 34a are installed on the lower heating unit side (workpiece 100 side) in the upper heating unit. The plurality of upper crack plates 34a are installed to be spaced apart from the plurality of heaters 32a. That is, a gap is formed between the upper surfaces of the plurality of upper crack plates 34a and the lower surfaces of the plurality of heaters 32a. The plurality of upper crack plates 34a are installed side by side in the X direction. A gap is formed between the plurality of upper crack plates 34a. If a gap is formed, dimensional difference due to thermal expansion can be absorbed. Therefore, it is possible to suppress the occurrence of deformation due to interference between the upper crack plates 34a. Additionally, as described above, the pressure in the space of the processing areas 30a and 30b can be reduced through this gap.

The plurality of lower heating plates 34b are installed on the upper heating unit side (workpiece 100 side) in the lower heating unit. The plurality of lower crack plates 34b are installed to be spaced apart from the plurality of heaters 32a. That is, a gap is formed between the lower surfaces of the plurality of lower crack plates 34b and the upper surfaces of the plurality of heaters 32a. The plurality of lower crack plates 34b are installed side by side in the X direction. A gap is formed between the plurality of lower crack plates 34b. If a gap is formed, dimensional difference due to thermal expansion can be absorbed. Therefore, it is possible to suppress the occurrence of deformation due to interference between the lower crack plates 34b. Additionally, through this gap, the pressure in the space of the processing areas 30a and 30b can be reduced.

The side cracking plate 34c is installed on each side of the treatment areas 30a and 30b in the X direction. The side crack plate 34c can be installed inside the cover 36. In addition, as described above, a gap is formed between the side cracking plate 34c and the upper cracking plate 34a or the lower cracking plate 34b. Through this gap, the pressure in the space of the processing areas 30a and 30b can be reduced.

The side cracking plate 34d is installed on each side of the treatment areas 30a and 30b in the Y direction. The side crack plate 34d installed on the door 13 side can be installed on the door 13 at a distance from the cover 36. The side crack plate 34d installed on the cover 15 side can be installed inside the cover 36. In addition, as described above, a gap is formed between the side cracking plate 34d and the upper cracking plate 34a or the lower cracking plate 34b. Through this gap, the pressure in the space of the processing areas 30a and 30b can be reduced.

In this embodiment, the gap formed between the upper crack plates 34a and between the lower crack plates 34b is the upper crack plate 34a (lower crack plate 34b) and the side crack plates 34c. ) and between the upper crack plate 34a (lower crack plate 34b) and the side crack plate 34d. The reason will be explained later.

As described above, the plurality of heaters 32a have a rod shape and are installed side by side at predetermined intervals. When the heater 32a is rod-shaped, heat is radiated radially from the central axis of the heater 32a. In this case, as the distance between the central axis of the heater 32a and the heated portion becomes shorter, the temperature of the heated portion increases. Therefore, when the workpiece 100 is held so as to face the plurality of heaters 32a, the area of the workpiece 100 located immediately above or immediately below the heaters 32a is connected to the plurality of heaters 32a. The temperature becomes higher than that of the area of the workpiece 100 located immediately above or below the space between the components. That is, when the workpiece 100 is directly heated using a plurality of rod-shaped heaters 32a, an in-plane distribution occurs in the temperature of the heated workpiece 100.

If an in-plane temperature distribution occurs in the workpiece 100, there is a risk that the quality of the formed organic film may deteriorate. For example, there is a risk that bubbles may be generated in areas where the temperature rises, or that the composition of the organic film may change in areas where the temperature rises.

The organic film forming apparatus 1 according to the present embodiment is provided with the above-described plurality of upper tempering plates 34a and plurality of lower tempering plates 34b. Therefore, the heat radiated from the plurality of heaters 32a enters the plurality of upper cracking plates 34a and the plurality of lower cracking plates 34b, and propagates inside them in the plane direction, thereby forming the workpiece 100. radiates towards As a result, it is possible to suppress the occurrence of in-plane temperature distribution of the workpiece 100, and further improve the quality of the formed organic film.

Since the plurality of upper tempering plates 34a and the plurality of lower tempering plates 34b propagate the incident heat in the surface direction, it is preferable that these materials be made of materials with high thermal conductivity. The plurality of upper tempering plates 34a and the plurality of lower tempering plates 34b can be made of, for example, aluminum, copper, stainless steel, etc. Additionally, when using a material that is easily oxidized, such as aluminum or copper, it is desirable to form a layer containing a material that is difficult to oxidize on the surface.

A portion of the heat radiated from the plurality of upper crack plates 34a and the plurality of lower crack plates 34b is directed to the side of the treatment area. Therefore, the above-described side cracking plates 34c and 34d are installed on the sides of the treatment area. The heat incident on the side crack plates 34c and 34d propagates through the side crack plates 34c and 34d in the plane direction, and a portion of the heat is radiated toward the workpiece 100. Therefore, the heating efficiency of the workpiece 100 can be improved.

The material of the side cracking plates 34c and 34d can be the same as that of the above-mentioned upper cracking plate 34a and lower cracking plate 34b.

In addition, in the above, the case where the plurality of upper crack plates 34a and the plurality of lower crack plates 34b are installed side by side in the One side may be a single plate-shaped member.

A plurality of crack plate supports 35 are installed side by side in the X direction. The crack plate support portion 35 can be installed directly below between the upper crack plates 34a in the X direction. The plurality of crack plate supports 35 can be fixed to a pair of holders 32b using fastening members such as screws. A pair of crack plate support portions 35 support both ends of the upper crack plate 34a in a detachable manner. Additionally, the plurality of fracture plate supports 35 supporting the plurality of lower fracture plates 34b may also have the same configuration.

When the upper crack plate 34a and the lower crack plate 34b are supported by the pair of crack plate support portions 35, even if the upper crack plate 34a and the lower crack plate 34b thermally expand, the upper crack plate 34a and the lower crack plate 34b are supported. Interference between (34a) and the lower crack plate (34b) can be suppressed. Therefore, deformation of the upper crack plate 34a and the lower crack plate 34b can be suppressed.

The cover 36 has a plate shape and covers the top, bottom, and side surfaces of the frame 31. That is, the inside of the frame 31 is covered by the cover 36. However, the cover 36 on the door 13 side can be installed on the door 13, for example.

The cover 36 surrounds the processing areas 30a and 30b, but a gap is formed at the boundary between the top and side surfaces of the frame 31, the border between the side and bottom surfaces of the frame 31, and the vicinity of the door 13. do.

Additionally, the cover 36 installed on the top and bottom surfaces of the frame 31 is divided into plural pieces. Additionally, a gap is formed between the divided covers 36. That is, the internal space of the processing unit 30 (processing area 30a, processing area 30b) communicates with the internal space of the chamber 10 through these gaps. Therefore, the pressure of the processing areas 30a and 30b can be made equal to the pressure of the space between the inner wall of the chamber 10 and the cover 36. The cover 36 can be formed of, for example, stainless steel.

The cooling unit 40 supplies cooling gas to the area where the heating unit 32 is installed. For example, the cooling unit 40 cools the cracked portion 34 surrounding the processing areas 30a and 30b with a cooling gas, and cools the workpiece 100 in a high temperature state by the cooled cracked portion 34. Cools indirectly. Additionally, for example, the cooling unit 40 may supply cooling gas to the workpiece 100 to directly cool the workpiece 100 in a high temperature state.

That is, the cooling unit 40 can cool the workpiece 100 indirectly and directly. Additionally, the cooling unit 40 may serve as a cleaning unit 50 that supplies cleaning gas (G), which will be described later, to the processing areas 30a and 30b in a cleaning process that will be described later.

The cooling unit 40 has, for example, a first gas supply path 40a and a second gas supply path 40b.

First, the first gas supply path 40a will be described. The first gas supply path 40a has a nozzle 41, a gas source 42, a gas control unit 43, and a switching valve 54.

As shown in FIG. 1, the nozzle 41 can be connected to a space where a plurality of heaters 32a are installed. The nozzle 41 can, for example, penetrate the cover 36 and be attached to the side crack plate 34c or the frame 31. A plurality of nozzles 41 can be installed in the Y direction (see FIG. 3). Additionally, the number and arrangement of nozzles 41 can be changed as appropriate. For example, in the X direction, the nozzle 41 may be installed on one side of the processing unit 30, or the nozzle 41 may be installed on both sides of the processing unit 30.

The gas source 42 supplies cooling gas to the nozzle 41. The gas source 42 can be, for example, a high-pressure gas cylinder, factory piping, etc. Additionally, multiple gas sources 42 may be installed.

The cooling gas is preferably a gas that is difficult to react with the heated workpiece 100. The cooling gas can be, for example, nitrogen gas, noble gas, etc. Noble gases include, for example, argon gas and helium gas. If the cooling gas is nitrogen gas, running costs can be reduced. Since helium gas has a high thermal conductivity, using helium gas as a cooling gas can shorten the cooling time.

The temperature of the cooling gas can be, for example, room temperature (eg, 25°C) or lower.

The gas control unit 43 is installed between the nozzle 41 and the gas source 42. The gas control unit 43 can, for example, control at least one of the supply and stop of cooling gas, and the flow rate and flow rate of cooling gas.

Additionally, the cooling gas supply timing may be after the heat treatment for the workpiece 100 is completed. In addition, completion of the heat treatment can be achieved after maintaining the temperature at which the organic film is formed for a predetermined period of time.

The switching valve 54 is a valve for switching the first gas supply path 40a and the second gas supply path 40b. The switching valve 54 is between the nozzle 41 and the gas control unit 43 and is installed outside the chamber 10.

Next, the second gas supply path 40b will be described. The second gas supply path 40b is formed to clean the inside of the chamber 10 in a cleaning process described later. The second gas supply path 40b discharges foreign substances such as particles inside the chamber 10 to the outside of the chamber 10 through the opening 11a of the chamber 10. For example, the second gas supply path 40b supplies the cleaning gas G to the inside of the processing areas 30a and 30b to form an airflow toward the opening 11a of the chamber 10.

In this embodiment, the second gas supply path 40b also functions as a “cleaning unit” of the present invention. Hereinafter, the second gas supply path 40b may be referred to as the cleaning unit 50.

The cleaning unit 50 has, for example, a nozzle 41, a gas source 52, a gas control unit 53, and a switching valve 54. In this case, the cleaning unit 50 is connected to the first gas supply path 40a and the switching valve 54.

The gas source 52 supplies cleaning gas G to the plurality of nozzles 41 . The gas source 52 can be, for example, a high-pressure gas cylinder or factory piping. Additionally, multiple gas sources 52 may be installed.

The cleaning gas (G) is preferably a gas that does not react easily with the inner wall of the heated chamber 10 or elements inside the chamber 10. The cleaning gas (G) can be, for example, clean dry air, nitrogen gas, carbon dioxide gas (CO ₂ ), or rare gas. Noble gases include, for example, argon gas and helium gas. In this case, if the cleaning gas G is clean dry air or nitrogen gas, operating costs can be reduced.

The cleaning gas G may be the same as or different from the cooling gas described above. When the cleaning gas G is the same as the cooling gas, either the gas source 52 or the gas source 42 may be installed.

The temperature of the cleaning gas G can be, for example, room temperature (eg, 25°C).

The gas control unit 53 is installed between the switching valve 54 and the gas source 52. The gas control unit 53 can, for example, control the supply and stop of supply of the cleaning gas (G). Additionally, the gas control unit 53 may, for example, control at least one of the flow rate and flow rate of the cleaning gas (G). The flow rate and flow rate of the cleaning gas G can be appropriately changed depending on the size of the chamber 10, the shape, number, and arrangement of the nozzles 41, etc. The flow rate and flow rate of the cleaning gas G can be appropriately determined, for example, by performing experiments or simulations.

Next, the operation of the organic film forming apparatus 1 will be exemplified.

Figure 2 is a graph illustrating the processing process of the workpiece 100.

As shown in FIG. 2, the organic film formation process includes a workpiece loading process, a temperature raising process, a heat treatment process, a cooling process, a workpiece unloading process, and a cleaning process.

First, in the workpiece loading process, the opening/closing door 13 is spaced apart from the flange 11, and the workpiece 100 is loaded into the internal space of the chamber 10. When the workpiece 100 is brought into the internal space of the chamber 10, the internal space of the chamber 10 is depressurized by the exhaust unit 20 to a predetermined pressure.

When the internal space of the chamber 10 is depressurized to a predetermined pressure, power is applied to the heater 32a. Then, as shown in FIG. 2, the temperature of the workpiece 100 increases. The process in which the temperature of the workpiece 100 increases is called a temperature raising process. In this embodiment, the temperature increase process is performed twice (temperature increase process (1), (2)). Additionally, the predetermined pressure may be a pressure at which the polyamic acid in the solution is not oxidized by reacting with oxygen remaining in the internal space of the chamber 10. The predetermined pressure may be, for example, 1×10 ^-2 Pa to 100 Pa. That is, exhausting from the second exhaust unit 22 is not absolutely necessary, and after exhausting from the first exhaust unit 21 is started, the internal space of the chamber 10 has a pressure within the range of 10 Pa to 100 Pa. When this happens, heating of the workpiece 100 by the heating unit 32 may be started.

After the temperature raising process, a heat treatment process is performed. The heat treatment process is a process of maintaining a predetermined temperature for a predetermined time. In this embodiment, heat treatment process (1) and heat treatment process (2) can be provided.

The heat treatment process (1) can be, for example, a process of heating the workpiece 100 at a first temperature for a predetermined period of time to discharge moisture, gas, etc. contained in the solution. The first temperature may be, for example, 100°C to 200°C.

By performing the heat treatment step (1), moisture or gas contained in the solution can be prevented from being included in the finished organic film. Additionally, depending on the components of the solution, etc., the first heat treatment step may be performed multiple times by changing the temperature, or the first heat treatment step may be omitted.

The heat treatment process (2) is a process of forming an organic film by maintaining the solution-coated substrate (workpiece 100) at a predetermined pressure and temperature for a predetermined time. The second temperature may be the temperature at which imidization occurs, for example, 300°C or higher. In this embodiment, in order to obtain an organic film with a high degree of molecular chain packing, the heat treatment step (2) is performed at 400°C to 600°C.

The cooling process is a process of lowering the temperature of the workpiece 100 on which the organic film is formed. In this embodiment, it is performed after the heat treatment process (2). The workpiece 100 is cooled to a temperature at which it can be transported. For example, if the temperature of the workpiece 100 to be transported is room temperature, the workpiece 100 can be easily transported out. However, in the organic film forming apparatus 1, the workpiece 100 is continuously heat-treated. Therefore, if the temperature of the workpiece 100 is set to room temperature every time the workpiece 100 is unloaded, the time it takes to raise the temperature of the next workpiece 100 becomes longer. In other words, there is a risk that productivity may decrease. The temperature of the processed product 100 to be transported may be, for example, 50°C to 90°C. This carrying out temperature is set as the third temperature.

The controller 60 closes the valve 25 of the first exhaust unit 21. Then, the cooling unit 40 is controlled to supply cooling gas to the space where the plurality of heaters 32a are installed, thereby lowering the temperature of the workpiece 100 indirectly and directly.

Therefore, the gap formed between the upper crack plates 34a and between the lower crack plates 34b is between the upper crack plates 34a (lower crack plates 34b) and the side crack plates 34c. , and is larger than the gap formed between the upper crack plate 34a (lower crack plate 34b) and the side crack plate 34d. By doing this, when the cooling unit 40 supplies cooling gas, the amount of cooling gas directed to the workpiece 100 can be increased. Additionally, the amount of cooling gas exhausted from the processing areas 30a and 30b can be reduced. Therefore, the workpiece 100 can be cooled efficiently.

Additionally, immediately after the organic film is formed, the internal pressure of the chamber 10 is lower than atmospheric pressure, that is, there is less gas inside the chamber 10. Therefore, even if cooling gas is supplied to the inside of the chamber 10, scattering of solid components contained in the sublimated product can be suppressed by the supplied cooling gas.

When the output of a vacuum gauge (not shown) that detects the internal pressure of the chamber 10 becomes the same as atmospheric pressure, the controller 60 closes the valve 25 of the second exhaust unit 22 and the third exhaust unit ( By opening the valve 25 of 23), the cooling gas is always exhausted.

The controller 60 may control the switching valve 54 to supply the cleaning gas G to the space where the plurality of heaters 32a are installed when the detection value of the thermometer (not shown) is 200°C or lower. When the cleaning gas (G) is CDA and the cooling gas is N ₂ or a rare gas, the amount of N ₂ or rare gas used can be reduced.

In the process of unloading the workpiece, when the temperature of the workpiece 100 on which the organic film is formed reaches the third temperature, the supply of the cooling gas or cleaning gas (G) introduced into the chamber 10 is stopped. Then, the opening/closing door 13 is spaced apart from the flange 11, and the workpiece 100 is carried out.

As described above, when the sublimated product comes into contact with an element whose temperature is lower than that of the heated workpiece 100, the components contained in the sublimated product may become solid and adhere to the element.

However, since the upper cracked plate 34a and the lower cracked plate 34b are heated, the components contained in the sublimated product can be prevented from adhering to the upper cracked plate 34a and the lower cracked plate 34b. there is. In addition, as described above, since an airflow is formed inside the chamber 10 toward the bottom surface (or ceiling surface) of the chamber 10 where the exhaust port 17 or the exhaust port 18 is formed, the sublimated material , is discharged out of the chamber 10 along this airflow.

As described above, since the sublimated product was thought to be discharged out of the chamber 10, it was thought that it was possible to suppress the components contained in the sublimated product from adhering to the workpiece 100. Therefore, conventionally, after the workpiece 100 was unloaded, the next workpiece 100 was loaded into the chamber 10 and the above process was repeated.

However, it was found that in reality, a small amount of sublimated material adhered to the inner wall of the chamber 10. By repeating the organic film formation process, a small amount of sublimated material is repeatedly attached to the inner wall of the chamber 10. As a result, the solid generated from the sublimated product becomes larger. When the solid generated from the sublimated product grows to a certain extent, it peels off from the inner wall of the chamber 10. Solids peeled off from the inner wall of the chamber 10 may become foreign substances such as particles and adhere to the surface of the workpiece 100.

In general, a deposition prevention plate is installed on the inner wall of the chamber to prevent sublimation from adhering to the chamber, and the deposition prevention plate is regularly replaced. However, with this method, the exchange operation is complicated. Therefore, the present inventors studied cleaning to remove the solid generated from the sublimated product from the inner wall of the chamber 10, etc.

Next, the cleaning method of the organic film forming apparatus according to this embodiment along with the action of the cleaning unit 50 will be described.

Figure 3 is a schematic cross-sectional view illustrating the operation of the cleaning unit 50.

Additionally, in order to avoid complexity, elements installed inside the chamber 10 are omitted.

As shown in FIG. 3, the cleaning unit 50 cleans the chamber 10 when the opening 11a of the chamber 10 is open (when the door 13 is spaced apart from the flange 11). Supply cleaning gas (G) inside. For example, when the opening 11a of the chamber 10 is open, the controller 60 controls the gas control unit 53 to direct the cleaning gas (G) from the nozzle 41 into the heating unit 32. sheds Cleaning gas (G) is supplied into the interior of the chamber 10 from within the heating unit 32.

As described above, the gap formed between the upper crack plates 34a and between the lower crack plates 34b is formed between the upper crack plate 34a (lower crack plate 34b) and the side crack plates 34c. ) and between the upper crack plate 34a (lower crack plate 34b) and the side crack plate 34d. Accordingly, when the cleaning unit 50 supplies the cleaning gas (G), the amount of the cleaning gas (G) supplied to the processing areas 30a and 30b can be increased.

The cleaning gas (G) supplied inside the chamber 10 is discharged to the outside of the chamber 10 through the opening 11a of the chamber 10. At this time, foreign substances such as sublimated substances or particles inside the chamber 10 are discharged to the outside of the chamber 10 through the airflow of the cleaning gas (G). Additionally, the heater 32a, the holder 32b, the crack portion 34, and the crack plate support portion 35 rub against each other due to thermal expansion. As they rub against each other, tiny metal fragments are generated. This metal piece is also included in the foreign matter. In addition, when an air current is formed inside the chamber 10, the components (solids) of the sublimation attached to the inner wall of the chamber 10 or the elements installed inside the chamber 10 are peeled off, and the chamber 10 ) can be discharged to the outside.

In this case, cleaning gas G can be supplied to the inside of the chamber 10 regularly or as needed. That is, a cleaning process may be provided separately from the process of processing the workpiece 100, and cleaning gas G may be supplied into the chamber 10 in the cleaning process.

Additionally, while the processed workpiece 100 is unloaded from the chamber 10 and the workpiece 100 to be processed next is loaded into the chamber 10, a cleaning gas (G ) can also be supplied. That is, even in a series of processes for processing the workpiece 100, if there is no workpiece 100 inside the chamber 10, cleaning can be performed by the cleaning unit 50.

If the cleaning unit 50 is installed, foreign substances such as sublimated substances or particles inside the chamber 10 can be carried by the airflow of the cleaning gas G and discharged to the outside of the chamber 10. In addition, components (solids) of the sublimated material attached to the inner wall of the chamber 10 can be peeled off and discharged to the outside of the chamber 10.

In other words, if the cleaning unit 50 is installed, sufficient removal of foreign matter inside the chamber 10 becomes possible.

Next, the effect of the cleaning unit 50 will be further explained.

Figure 4 is a graph when the emission of particles by the exhaust unit 20 and the emission of particles by the cleaning unit 50 are combined.

In the discharge of particles by the exhaust unit 20, the operation of depressurizing the interior of the chamber 10 and returning the depressurized interior of the chamber 10 to atmospheric pressure was repeated 10 times.

In the discharge of particles by the cleaning unit 50, the cleaning gas G is supplied simultaneously from a plurality of nozzles 41 after the particles are discharged by the exhaust unit 20. That is, before the particles are discharged by the cleaning unit 50, the particles are discharged by the exhaust unit 20 in advance.

As can be seen from FIG. 4, when particles are discharged by the exhaust unit 20 and particles are discharged by the cleaning unit 50, particles of various sizes can be discharged.

Figure 5 is a graph when only particles are discharged by the cleaning unit 50.

When discharging particles by the cleaning unit 50, cleaning gas G was supplied simultaneously from a plurality of nozzles 41.

As can be seen from FIG. 5, particles of various sizes can be discharged just by discharging particles by the cleaning unit 50.

Here, a comparison is made between Figures 4 and 5. As can be seen from the comparison of FIGS. 4 and 5, even if the discharge of particles by the exhaust unit 20 is performed in advance or not, the particles discharged immediately after the start of the discharge of particles by the cleaning unit 50 There is no significant difference in number. This means that it is difficult to sufficiently remove particles by the exhaust unit 20. In other words, if cleaning is performed sequentially by exhausting the inside of the chamber 10 and supplying gas into the inside of the chamber 10 in a sealed state, foreign substances such as particles can be removed to some extent. Even if it is possible, sufficient removal of foreign matter such as particles cannot be achieved.

In contrast, when cleaning is performed by the cleaning unit 50, sufficient removal of foreign matter inside the chamber 10 becomes possible, as can be seen from FIG. 5 .

Here, the detection amounts of particles of various sizes during the elapsed time of 3 min to 5 min from the start of particle discharge by the cleaning unit 50 are compared in FIGS. 4 and 5. As can be seen from the comparison between FIGS. 4 and 5, when the elapsed time from the start of particle discharge by the cleaning unit 50 is 3 min to 5 min, the amount of particles detected in FIG. 4 is smaller. Accordingly, the time for discharging particles by the cleaning unit 50 can be shortened. That is, it is more preferable to discharge particles by the exhaust unit 20 and discharge the particles by the cleaning unit 50. However, if particles are discharged by the exhaust unit 20 while the workpiece 100 is inside the chamber 10, there is a risk that the particles may adhere to the surface of the workpiece 100. The discharge of particles by the exhaust unit 20 and the discharge of particles by the cleaning unit 50 are preferably performed in the atmosphere of the organic film forming apparatus 1.

Figure 6 is also a graph when only particles are discharged by the cleaning unit 50.

However, in the case of FIG. 6, the cleaning gas G was sequentially supplied from a plurality of nozzles 41. For example, after supplying the cleaning gas (G) from a plurality of nozzles 41 for a predetermined time and stopping the supply of the cleaning gas (G) from the plurality of nozzles 41, the other plurality of nozzles 41 ) was supplied from the cleaning gas (G) for a predetermined time. In this case, the cleaning gas G may be supplied sequentially from a plurality of nozzles 41 installed above, or the cleaning gas G may be supplied sequentially from a plurality of nozzles 41 installed below. The cleaning gas G may be supplied sequentially from the nozzle 41. Additionally, there may be only one nozzle 41 used when supplying the cleaning gas G.

As can be seen from FIG. 6, when 3 min has elapsed since the cleaning unit 50 started discharging particles, the detected amount of particles is decreasing. However, since the elapsed time from the start of particle discharge by the cleaning unit 50 is 4 min, the detected amount of particles is increasing. This is believed to be because the air flow of the cleaning gas G within the chamber 10 changed by changing the supply of the cleaning gas from the plurality of nozzles 41 to the other plurality of nozzles 41. It is believed that due to the change in the airflow of the cleaning gas G within the chamber 10, particles that could not be discharged through the airflow of the cleaning gas G until then were discharged to the outside of the chamber 10.

Therefore, as can be seen from the comparison of Figures 5 and 6, when the cleaning gas (G) is sequentially supplied from the plurality of nozzles 41 to the other plurality of nozzles 41, the number of discharged particles can be significantly increased. You can. This means that foreign substances inside the chamber 10 can be removed more effectively.

Figure 7 is a schematic cross-sectional view illustrating the cleaning unit 50a according to another embodiment.

Like the cleaning unit 50 described above, the cleaning unit 50a has, for example, a plurality of nozzles 41, a gas source 52, and a gas control unit 53.

Additionally, as shown in FIG. 6, the cleaning unit 50a may further include a detection unit 56.

The detection unit 56 can be installed in a position opposite to the opening 11a of the chamber 10. The detection unit 56 detects foreign substances such as particles contained in the cleaning gas G discharged from the opening 11a of the chamber 10. The detection unit 56 can be, for example, a particle counter.

If the detection unit 56 is installed, the end point of cleaning can be detected. For example, when the number of foreign substances detected by the detection unit 56 falls below a predetermined value, the controller 60 controls the gas control unit 53 to stop the supply of the cleaning gas G, thereby performing the cleaning operation. can be terminated.

If the end point of cleaning can be detected, it becomes possible to reduce the consumption of cleaning gas G compared to the case where cleaning is terminated through time management or the like. Additionally, foreign matter inside the chamber 10 can be more appropriately removed.

Figure 8 is a schematic cross-sectional view illustrating the cleaning unit 50b according to another embodiment.

Like the cleaning unit 50 described above, the cleaning unit 50b has, for example, a plurality of nozzles 41, a gas source 52, and a gas control unit 53.

Additionally, as shown in FIG. 8, the cleaning unit 50b may further include a detection unit 56 and a case 55.

The case 55 has an airtight structure and can be installed in a position opposite to the opening 11a of the chamber 10. The detection unit 56 can be installed inside the case 55. The case 55 can be, for example, a mini environment (local clean environment).

As described above, the cleaning gas G discharged from the chamber 10 contains foreign substances such as particles. Therefore, foreign matter discharged from the chamber 10 may diffuse into the atmosphere in which the organic film forming apparatus 1 is installed. If foreign substances such as diffused particles reach devices or elements around the organic film forming device 1, there is a risk that contamination or breakdown may occur. Additionally, there are cases where it is undesirable for workers to inhale foreign substances such as particles or cleaning gas (G).

If the case 55 is installed, diffusion of foreign matter or cleaning gas G discharged from the chamber 10 into the atmosphere in which the organic film forming apparatus 1 is installed can be suppressed.

FIG. 9 is a schematic perspective view illustrating an organic film forming apparatus 1a according to another embodiment.

Like the cleaning unit 50 described above, the cleaning unit 150 has, for example, a plurality of nozzles 41, a gas source 52, and a gas control unit 53.

Additionally, as shown in FIG. 9, the cleaning unit 150 may further include another cleaning unit 50c.

The cleaning unit 50c has a nozzle 51, a gas source 52, and a gas control unit 53.

As shown in FIG. 9, the nozzle 51 can be connected to the side of the chamber 10. A plurality of nozzles 51 can be installed on the side of the chamber 10 . The nozzle 51 of this embodiment has a cylindrical shape with a closed tip. The blocked tip of the nozzle 51 extends to the side of the chamber 10 opposite to the side of the chamber 10 where the nozzle 51 is installed. A plurality of nozzle holes 51a are formed on the side of the nozzle 51. Additionally, the number and arrangement of nozzles 51 can be changed as appropriate. For example, a plurality of nozzles 51 may be installed side by side in the Y direction on the side of the chamber 10. Nozzles 51 may be installed on both opposing sides of the chamber 10. Nozzles 51 penetrating both opposing sides of the chamber 10 may be installed. A plurality of nozzles 51 may be installed side by side in the X direction on the cover 15.

Figure 10 is a schematic cross-sectional view illustrating the cleaning unit 150 according to another embodiment.

As shown in FIG. 10, cleaning gas G can be introduced into the chamber 10 through the nozzle hole 51a of the nozzle 51. By installing the cleaning unit 50c, the airflow of the cleaning gas G formed in the nozzle 41 can be reinforced. Alternatively, an airflow different from the airflow of the cleaning gas G formed in the nozzle 41 may be generated. Therefore, particles that cannot be discharged through the airflow of the cleaning gas G formed in the nozzle 41 are discharged to the outside of the chamber 10. Therefore, the number of emitted particles can be significantly increased. This means that foreign substances inside the chamber 10 can be removed more effectively.

Additionally, in the cooling process, cooling gas may be supplied into the chamber from the cleaning unit 50c. If the supply timing of the cooling gas is immediately after the organic film is formed or during the return of the internal pressure of the chamber 10 to atmospheric pressure, the cooling time and the time to return to atmospheric pressure can be overlapped. In other words, the actual cooling time can be shortened. Additionally, sublimated matter adheres to the inner wall of the chamber 10. Accordingly, in order to prevent the sublimated substance from peeling off from the inner wall of the chamber 10 and flowing into the inside of the processing areas 30a and 30b, the amount of cooling gas supplied from the cleaning unit 50c is adjusted from the cooling unit 40. It is desirable to set the supply amount of cooling gas to less than .

Additionally, in this embodiment, a plurality of nozzle holes are formed in one nozzle 51, but the present invention is not limited to this. For example, one nozzle hole may be used for one nozzle 51. In this case, the nozzle 51 has a cylindrical shape with a flange formed at the open end. And the nozzle 51 is airtightly connected to the hole on the side of the chamber 10. That is, the hole on the side of the chamber 10 may function as the nozzle hole 51a. Alternatively, when the nozzle 51 is airtightly connected to a hole formed in the cover 15, the hole formed in the cover 15 may function as the nozzle hole 51a.

FIG. 11 is a schematic perspective view illustrating an organic film forming apparatus 1b according to another embodiment.

Like the cleaning unit 150 described above, the cleaning unit 250 has, for example, a plurality of nozzles 41, a gas source 52, a cleaning unit 50c, and a gas control unit 53.

Additionally, as shown in FIG. 11, the cleaning unit 250 may further include another cooling unit 140.

The cooling unit 140 supplies cooling gas to the workpiece 100 inside the processing areas 30a and 30b. That is, the cooling unit 140 directly cools the workpiece 100 in a high temperature state.

The cooling unit 140 is different from the cooling unit 40 in that it has a nozzle 141 instead of the nozzle 41 .

At least one nozzle 141 may be installed inside the processing areas 30a and 30b (see FIG. 12). The nozzle 141 can, for example, penetrate the cover 15 and the cover 36 and be attached to the side crack plate 34d or the frame 31. In this embodiment, the nozzle 141 is attached to a position that can supply cooling gas to the back surface of the workpiece 100. Additionally, a plurality of nozzles 141 can be installed in the X direction. Alternatively, the nozzle 141 can be shaped like a cylinder with a closed tip. Additionally, a plurality of holes may be formed on the side of the nozzle 141 so that the nozzle 141 can be inserted from the side of the chamber 10.

In the cooling process, cooling gas is discharged from the nozzle 141 in parallel to the workpiece 100. Additionally, in Fig. 12, the door 13 is in an open state, but in the cooling process described below, the door 13 is in a closed state. Cooling gas is supplied from the nozzle 141 approximately parallel to the back surface of the workpiece 100 (i.e., the surface supported by the support portion 33). As a result, cooling gas is filled between the workpiece 100 and the support portion 33, making it possible to directly cool the workpiece 100. Additionally, the cooling gas supplied from the nozzle 141 and passing through the back surface of the workpiece 100 is discharged out of the chamber 10 from an outlet (not shown). A plurality of discharge ports (for example, four) are formed on the ceiling of the chamber 10. When cooling gas is supplied to the chamber 10 in the cooling process, the heat within the chamber 10 moves upwards of the chamber 10 and can be efficiently dissipated through the outlet formed in the ceiling. In addition, by sequentially supplying cooling gas from the nozzle 141 located on the lower side within the chamber 10 among the plurality of nozzles 141, an airflow toward the ceiling of the chamber 10 is created within the chamber 10. As a result, particles in the chamber 10 can be efficiently discharged from the outlet.

Here, when the cooling process is started, cooling gas is supplied, so that the internal pressure of the chamber 10, which was lower than atmospheric pressure, gradually approaches atmospheric pressure. At this time, when the internal pressure of the chamber 10 rapidly approaches atmospheric pressure, the workpiece 100 supported on the support part 33 moves due to pressure fluctuations, and passes through the support part 33, generating particles. So, first, after the cooling process starts, while the internal pressure of the chamber 10 reaches a predetermined pressure, cooling gas is supplied only from the nozzle 41 to indirectly cool the workpiece 100. The cooling gas supplied from the nozzle 41 is not supplied directly to the workpiece 100, but is supplied to the crack portion 34. As a result, the internal pressure of the chamber 10 gradually increases while avoiding a sudden change in the pressure near the workpiece 100. Afterwards, when the internal pressure of the chamber 10 reaches a predetermined pressure, cooling gas is also supplied from the nozzle 141 to directly cool the workpiece 100. The predetermined pressure is a pressure at which the workpiece 100 does not move due to pressure fluctuations caused by supplying cooling gas from the nozzle 141, and is obtained in advance through experiments or the like. Since the cooling gas is supplied from the nozzle 141 after the internal pressure of the chamber 10 has increased to a certain extent, the workpiece 100 does not move due to pressure fluctuations. As a result, the generation of particles due to the workpiece 100 and the support portion 33 rubbing against each other can be effectively suppressed.

Additionally, a plurality of nozzles (not shown) that blow out air from the bottom of the chamber 10 toward the ceiling may be installed at the end of the chamber 10 on the opening 11a side. In this way, it is possible to form an airflow from the bottom of the chamber 10 to the ceiling, so that the particles blown by the nozzle 141 and the nozzle 41 are efficiently transported to the outlet and discharged. You can. Additionally, the airflow formed by this nozzle (not shown) also serves as an air curtain that prevents particles from entering the chamber 10 when the door 13 is open.

Additionally, a plurality of nozzles (not shown) that blow air from the ceiling of the chamber 10 toward the floor may be installed. When used as an air curtain (when the door 13 is open), an airflow may be formed from the ceiling of the chamber 10 to the floor. In this case, since an air curtain can be formed in which air flows in the same direction as the downflow in the clean room where the organic film forming apparatus 1 is installed, particle intrusion into the chamber 10 can be prevented more effectively. .

Additionally, a nozzle (not shown) that blows air from the bottom of the chamber 10 toward the ceiling may be installed not only on the opening 11a side but also on the cover 15 side. After the cooling gas discharged from the cooling nozzle 141 is discharged, it flows toward the door 13 via the back surface of the workpiece 100, and its flow rate gradually decreases. When the cooling gas collides with the door 13 and the cover 15 side, the flow rate of the cooling gas is significantly slowed, and the cooling gas tends to stagnate on the wall surface on the cover 15 side. Then, the particles remain attached to the wall on the cover 15 side, and the particles attached to the wall on the cover 15 side end up adhering to the workpiece to be processed next. By installing a nozzle that blows air from the bottom of the chamber 10 toward the ceiling along the wall on the cover 15 side, particles attached to the wall can be efficiently discharged from the outlet.

When cooling the workpiece 100 indirectly or directly, cooling gas is supplied from the cooling unit 40 and the cooling unit 140 in the cooling process. That is, the workpiece 100 can be directly cooled using the nozzle 141 of the cooling unit 140. By doing this, the actual cooling time can be shortened.

Figure 12 is a schematic cross-sectional view illustrating the cleaning unit 250 according to another embodiment.

By installing the cooling unit 140, the cleaning gas G can be supplied to the inside of the processing areas 30a and 30b from the nozzle 141. Therefore, the airflow of the cleaning gas G formed in the nozzle 41 can be reinforced. Accordingly, particles that could not be discharged through the airflow of the cleaning gas (G) formed in the nozzle 41 are discharged to the outside of the chamber 10. Therefore, the number of emitted particles can be significantly increased. This means that foreign substances inside the chamber 10 can be removed more effectively.

As described above, the cleaning method of the organic film forming apparatus according to the present embodiment includes a chamber 10 having an opening 11a for loading or unloading the workpiece 100 and capable of maintaining an atmosphere reduced from atmospheric pressure. This is a cleaning method of an organic film forming device having an organic film forming device.

In the cleaning method of the organic film forming apparatus according to the present embodiment, when the opening 11a of the chamber 10 is open, cleaning flows inside the chamber 10 toward the opening 11a of the chamber 10. Forms a flow of gas (G).

Additionally, the cleaning gas G is sequentially supplied from the plurality of nozzles 41 to form a flow of the cleaning gas G.

Additionally, when the number of foreign substances contained in the cleaning gas G discharged from the opening 11a of the chamber 10 falls below a predetermined value, the formation of the flow of the cleaning gas G is stopped.

When forming a flow of cleaning gas (G) flowing toward the opening 11a of the chamber 10, the workpiece 100 is not supported inside the chamber 10.

In addition, the cleaning gas (G) formed by sequentially supplying the cleaning gas (G) from the plurality of nozzles 51, the plurality of nozzles 141, or both, and the cleaning gas (G) is sequentially supplied from the plurality of nozzles 41. ) may be reinforced. Alternatively, the cleaning gas (G) is formed by sequentially supplying the cleaning gas (G) from the plurality of nozzles 51 or the plurality of nozzles 141 or both. ) may form a different flow from the flow.

Above, the embodiments have been exemplified. However, the present invention is not limited to these techniques.

Appropriate design changes made by those skilled in the art to the above-described embodiments are also included in the scope of the present invention as long as they retain the features of the present invention.

For example, the shape, dimensions, arrangement, etc. of the organic film forming apparatus 1 are not limited to those illustrated and can be changed as appropriate.

In addition, each element included in each of the above-described embodiments can be combined as much as possible, and combinations thereof are also included in the scope of the present invention as long as they include the features of the present invention.

For example, when performing a cleaning process, not only the opening 11a of the chamber 10 but also the third exhaust portion 23 may be opened. By doing this, since the cleaning gas G is discharged from the third exhaust portion, sufficient removal of foreign matter inside the chamber 10 becomes possible.

1: Organic film forming device 10: Chamber
11a: opening 20: exhaust section
30: processing unit 30a: processing area
30b: processing area 32: heating section
32a: heater 50: cleaning unit
50a: cleaning unit 50b: cleaning unit
51: nozzle 52: gas source
53: gas control unit 54: switching valve
55: Case 60: Controller
100: Workpiece G: Cleaning gas

Claims (5)

With chamber,
a processing area installed inside the chamber and processing a work supported by a support portion;
A crack portion installed inside the chamber and surrounding the processing area;
a heating unit installed inside the chamber and heating the workpiece within the processing area;
a first nozzle installed outside the processing area surrounded by the crack portion and supplying a cooling gas;
a second nozzle installed inside the processing area surrounded by the crack portion and supplying cooling gas to directly cool the workpiece;
a gas control unit that controls the first nozzle and the second nozzle;
An exhaust unit having a pressure control unit that exhausts the interior of the chamber and controls the internal pressure of the chamber to become a first pressure,
The exhaust unit controls the internal pressure of the chamber to be the first pressure when the work is heated by the heating unit,
The gas control unit starts supplying the cooling gas from the first nozzle after heating the work by the heating unit, and when the internal pressure of the chamber reaches the second pressure, the cooling gas is supplied from the second nozzle. Controls to start supply of gas,
A heat processing device, wherein the second pressure is closer to atmospheric pressure than the first pressure. According to paragraph 1,
The crack part,
A crack plate support,
It has a crack plate which is a plurality of plate-shaped members supported by the crack plate support portion,
The heat processing device, wherein the treatment area is connected to an internal space of the chamber through a gap formed between the plurality of cracking plates. According to claim 1 or 2,
Inside the chamber, the processing areas are arranged in a plurality of overlapping positions with spaced apart in the vertical direction,
The heating unit and the first nozzle are disposed between the plurality of processing areas. According to claim 1 or 2,
A heat processing device characterized in that the second nozzle supplies the supply gas in parallel with the back surface of the work. A heat treatment method for heat treating a workpiece supported in a processing area surrounded by cracks in a chamber, comprising:
an exhaust process of depressurizing the internal space of the chamber to a first pressure;
A heat treatment process of heat-treating the workpiece by a heating unit;
After the heat treatment process, a first cooling process of cooling the cracked portion,
After the heat treatment process, there is a second cooling process for cooling the work,
The second cooling process starts when the internal pressure in the chamber reaches the second pressure,
A heat treatment method, wherein the second pressure is closer to atmospheric pressure than the first pressure.