TW202232600A - 經由定向的晶圓裝載作不對稱性校正 - Google Patents

經由定向的晶圓裝載作不對稱性校正 Download PDF

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TW202232600A
TW202232600A TW111113772A TW111113772A TW202232600A TW 202232600 A TW202232600 A TW 202232600A TW 111113772 A TW111113772 A TW 111113772A TW 111113772 A TW111113772 A TW 111113772A TW 202232600 A TW202232600 A TW 202232600A
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永豪 劉
查爾斯Ｃ 蓋瑞森
煥波 張
朱志澤
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美商應用材料股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
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    • B25J9/00—Programme-controlled manipulators
    • B25J9/16—Programme controls
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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Abstract

一種化學機械研磨系統包括：計量站，具有被配置為測量基板的厚度輪廓的感測器；機械臂，被配置為將基板從計量站轉移到研磨站，研磨站具有：用於支撐具有研磨表面的研磨墊的平臺；研磨表面上的承載頭，承載頭具有經配置以施加壓力至承載頭中基板的膜；以及控制器，控制器被配置為接收來自感測器的測量結果並被配置為控制機械臂以根據基板輪廓與承載頭的去除輪廓定向承載頭中的基板。

Description

經由定向的晶圓裝載作不對稱性校正
本揭示內容涉及化學機械研磨（CMP）。
通常藉由循序沈積導電層、半導體層或絕緣層到半導體晶圓上，以在基板上形成積體電路。各種製造處理需要平面化基板上的層。例如，一個製造步驟涉及將填料層沈積到非平面的表面上，並將填料層平面化，直到非平面表面暴露為止。對於一些應用，填料層被平面化，直到暴露出圖案化層的頂表面。例如，可在圖案化絕緣層上沈積金屬層，以在絕緣層中填充溝槽或孔。在平面化之後，在圖案化層的溝槽和孔中的金屬的剩餘部分形成通孔、插件和線，以在基板上的薄膜電路之間提供導電路徑。作為另一個示例，可以在圖案化的導電層上沉積介電層，然後將其平面化以實現後續的光刻步驟。
化學機械研磨（CMP）為一種被接受的平面化方法。此平面化方法通常需要將基板裝設在承載頭上。基板的暴露表面，通常被放置為抵靠旋轉研磨墊。承載頭在基板上提供可控制的負載，以將基板推向研磨墊。通常將具有磨料顆粒的研磨漿料供應到研磨墊的表面。
在一個態樣中，一種化學機械研磨系統包括：計量站，具有被配置為測量基板的厚度輪廓的感測器；機械臂，被配置為將基板從計量站轉移到研磨站，研磨站具有：用於支撐具有研磨表面的研磨墊的平臺；研磨表面上的承載頭，承載頭具有經配置以施加壓力至承載頭中基板的膜；以及控制器，控制器被配置為接收來自感測器的測量結果並被配置為控制機械臂以根據基板輪廓與承載頭的去除輪廓定向承載頭中的基板。
前述態樣之任意者的具體實施例，可包含下列特徵之一或更多者。
固定環可以將基板封閉在承載頭中。基板的直徑可以比保持環的內表面直徑小1-3mm。
感測器可以是相機。
感測器可以配置為執行線掃描。
承載頭可以具有一個或多個指示承載頭定向的標記。
基板可以具有一種或多種指示基板定向的標記。標記可以是基板上的凹口或平面。
控制器可以分配指示基板定向的標記。
計量站的底座可以支撐基板。
在另一態樣中，一種化學機械研磨的方法，包含：測量第一基板厚度；根據測量的厚度確定第一基板厚度輪廓；將第一基板轉移到承載頭上，並將第一基板裝載到承載頭中，其中第一基板和承載頭處於一零位；研磨第一基板；測量第一基板的研磨厚度；根據所測量的研磨厚度確定第一基板研磨厚度輪廓；藉由比較第一基板厚度輪廓和第一基板研磨厚度輪廓來計算由於承載頭引起的去除輪廓；測量第二基板厚度輪廓；相對於第二基板將承載頭旋轉至期望角度，其中承載頭相對於第二基板成期望角度的定向，被配置為使得去除輪廓降低第二基板厚度輪廓；將第二基板傳送到承載頭，並將第二基板裝載到承載頭中；和研磨第二基板。
前述態樣之任意者的具體實施例，可包含下列特徵之一或更多者。
使用固定環將第一基板和第二基板保持在承載頭中。
感測器可用於測量第一基板厚度、第一基板研磨厚度和第二基板厚度。感測器可以是相機。感測器可用於執行線掃描。
承載頭上的標記可以與第一基板上的標記對準。第一基板上的標記可以是第一基板的凹口或平面。
承載頭上的標記可以相對於第二基板上的標記以一定角度對準。第二基板上的標記可以是第二基板的凹口或平面。
上文內容的優點可包含（但不限於）以下優點。可以藉由在承載頭中定向基板，以使用承載頭的去除輪廓至少部分地抵消基板的不對稱厚度輪廓來減少基板的不對稱性。這樣可以改善晶圓內均勻性和晶圓間均勻性。
在附加圖式與下面的說明中揭示一或更多個具體實施例的細節。根據說明與圖式，以及申請專利範圍，將可顯然理解其他的態樣、特徵與優點。
在一些研磨系統中，在研磨期間，使用承載頭中的膜在基板上施加壓力。然而，即使以旨在在基板上施加均勻壓力的方式操作承載頭，基板也可以經受不對稱的去除輪廓，即，去除量隨圍繞基板中心的角位置而變化（而不是僅隨中心到徑向的距離而變化）。這種不對稱可能是由於整個基板上的處理變化或與承載頭產生的壓力差而引起的，即使對承載頭中的腔室均勻加壓也是如此。而且，在研磨之前，基板可以具有初始的不對稱的非均勻厚度輪廓。不對稱的去除輪廓與基板的初始不對稱厚度輪廓相結合，可以導致研磨的基板具有高度不對稱的最終厚度輪廓。
解決此問題的一種解決方案是確定承載頭的特定去除輪廓，並將基板定向在承載頭中，使得去除輪廓和基板的厚度輪廓至少部分地彼此抵消，從而減小最終厚度輪廓的不對稱性。
圖1示出了包括研磨設備104的研磨系統100的示例。研磨設備104包括一個或多個承載頭140（僅示出一個）。每個承載頭140可操作以將諸如晶圓的基板10保持抵靠研磨墊110。承載頭140可具有對於相關聯於每一各別基板的研磨參數（例如壓力）的獨立控制。每個承載頭140包括保持環142，以將基板10保持在研磨墊110上並且在撓性膜144下方的位置。
承載頭140可可選包含由膜界定的複數個可獨立控制式壓力腔室，例如三個腔室146a-146c，腔室146a-146c可施加可獨立控制式壓力至可撓膜144上（且因此在基板10上）的相關聯分區。
承載頭140被由支撐結構150（例如旋轉料架或軌道）懸吊，且被由驅動軸152連接至承載頭旋轉馬達154，以讓承載頭可沿著軸155旋轉。可選地，每個承載頭140可以例如在支撐結構150上的滑動器上橫向振動；藉由旋轉料架本身的旋轉振動，或藉由沿軌道支撐承載頭140的支架的運動。
研磨設備104包含平臺120，平臺120為可旋轉式碟形平臺，研磨墊110位於平臺120上。平臺可被操作以沿著軸125旋轉。例如，馬達121可轉動驅動軸124，以旋轉平臺120。研磨墊110可為具有外側研磨層112與較軟的背托層114的雙層研磨墊。
研磨設備104可包含通口130以釋出研磨液體132（諸如漿）到研磨墊110上到墊。研磨設備亦可包含研磨墊調節器，以打磨研磨墊110而使研磨墊110維持在一致的磨料狀態中。
在作業中，平臺120沿著平臺中央軸125旋轉，且每個承載頭140沿著承載頭中央軸155旋轉，並跨研磨墊的頂表面橫向位移。通常，承載頭140的旋轉導致基板10以相同的旋轉速率旋轉。不受任何特定理論的限制，儘管基板沒有「粘在」承載頭140中的膜144上，但是旋轉的固定環142的內表面相對於基板10的邊緣的摩擦會導致相等的旋轉基板的速度10。
雖然僅圖示一個承載頭140，但可提供更多承載頭以固持額外的基板，使得研磨墊110的表面區域可被有效率地使用。因此，適於保持基板以進行同時研磨處理的承載頭組件的數量，可以至少部分基於研磨墊110的表面區域。
在一些實施方式中，研磨設備包括原位監測系統160。原位監測系統可以是光學監測系統，例如光譜監測系統，其可以用於測量來自經歷研磨的基板的反射光的光譜。藉由包括孔（即穿過研磨墊的孔）或實心窗118，來提供通過研磨墊的光學通道。原位監測系統可替代地或另外包括渦流監測系統。
在一些實施方式中，光學監視系統160是序列內光學監視系統，其具有定位在兩個研磨設備之間或在研磨設備與轉移站之間的探針（未示出）。監視系統160可以在研磨期間連續或週期性地監視基板的區域的一個或多個特徵。例如，一個特徵是基板的每個區域的厚度。
在原位或順序具體實施例中，光學監視系統160可以包括光源162、光檢測器164以及用於在例如電腦的遠端控制器190、光源162和光檢測器164之間發送和接收信號的電路系統166。一根或多根光纖170可用於將來自光源162的光傳輸到研磨墊中的光學通道，並將從基板10反射的光傳輸至檢測器164。
參照圖1-3，承載頭140被配置為在其邊緣處緊密地包圍基板10，例如基板10的直徑比承載頭140的保持環142的內表面的直徑小1-3mm。當在承載頭140中對基板10進行研磨時，基板10的邊緣（例如基板10的前緣）在承載頭140的內表面上滾動，例如在固定環142的內表面上滾動。由於基板10的前緣與承載頭140的內表面之間的摩擦，基板10可抵靠承載頭140的內表面滾動（例如抵靠保持環142的內表面），以在當承載頭140旋轉時基板10隨著旋轉。假設地，例如由於距離平臺的旋轉軸較近或較遠的區域之間的相對速度的差異，基板10的旋轉將甚至抵消了不對稱的研磨效果。但是，實際上，由於基板相對於承載頭保持在大致固定的角度位置，因此基板10可能會受到承載頭140獨有的去除輪廓的影響。承載頭的去除輪廓可以如下確定，例如，根據經驗來確定，然後存儲以用於在加載時選擇基板的定向。
參照圖2和圖3，在被裝載到承載頭140中並由研磨設備104研磨之前，確定基板10的預研磨厚度輪廓。為了確定研磨前的厚度輪廓，可以將基板10裝載在計量站180的底座182上。感測器186被配置為測量基板10的厚度，例如，沉積在基板上的最外層的厚度（包括厚度差）。可以在橫跨基板10的二維陣列中的複數個位置處測量基板10的厚度。感測器186可以是例如被配置為掃描基板10的照相機或其他類似的計量裝置。例如，感測器186可以執行基板10的線掃描以生成基板的二維彩色圖像。感測器186可以產生厚度測量值，或者產生隨厚度線性縮放的測量值。
為了測量基板10的厚度，感測器186可以例如在距基板10的中心相同的徑向距離處圍繞基板10的中心在圓形中測量選擇的點。例如，底座182可以旋轉，使得感測器186掃描基板10上的圓形路徑。在一些實施方式中，感測器186可以在圍繞基板的中心的多個角位置處以及在距基板10的中心的多個徑向距離處進行測量；這些可以在基板10上的多個不同半徑的圓中提供角度輪廓。或者，感測器186可以以規則的陣列（例如矩形陣列）在整個基板10上進行測量，以形成基板10的厚度的二維陣列。
感測器186測量值可以被發送到控制器190，控制器190然後可以處理測量值以生成基板10的厚度輪廓。例如，可以將測量結果組合以生成基板10的厚度輪廓，例如角厚度輪廓。角厚度輪廓可以指示在圍繞基板10的中心的不同角位置處的基板10的厚度。例如，對於圍繞基板10的中心的複數個角度中的每一個，角厚度輪廓可以指示在距基板10的中心的徑向距離處的平均厚度值。角厚度輪廓圖還可指示在距基板10的中心的多個不同徑向距離處的不同角位置處的基板厚度。或者，厚度輪廓可以是由感測器186測量並且由控制器190產生的基板10的厚度的二維陣列。
在確定基板10的厚度輪廓之後，計算在承載頭140中基板10的期望定向。如上所述，控制器190可以存儲承載頭140的去除輪廓。例如，控制器190可以存儲複數個厚度去除值，厚度去除值是關於基板的中心的角度的函數。
基板10可以定位在承載頭140中，使得最終厚度輪廓中的不對稱性至少部分地被承載頭的去除輪廓中的不對稱性所抵消。控制器可以被配置為基於已知的承載頭140的去除輪廓R H（θ）和基板10的預研磨厚度輪廓R S（θ），來確定基板10相對於承載頭140的期望相對定向θ D。例如，角度差Δθ可以在例如0度至360度之間的每1度或每5度的範圍內增加。在Δθ的每個值處，計算已知去除輪廓R H（θ）和預研磨厚度輪廓R S（θ）之間的總差異。總差異可以被計算為差異的平方和，例如，
Figure 02_image001
儘管可以使用其他差異度量，例如差異的絕對值之和。
期望角度θ D應等於為總差異提供最小值的Δθ值。
承載頭可以相對於基板旋轉以具有期望的角度θD。換句話說，可以將承載頭140旋轉至一定角度，使得承載頭140的去除輪廓與基板10的預研磨厚度輪廓互補。例如，承載頭140可以相對於基板10旋轉，使得在研磨期間，去除輪廓的最大去除部分可以對應於預研磨厚度輪廓的最厚部分。
為了將基板10以期望的定向放置在承載頭140中，如上所述，計算了承載頭140和基板10之間的期望相對角度θ D。
測量基板10的絕對角位置θ P（例如相對於研磨設備的固定框架）。當基板10在底座182上時，可以由感測器186進行測量。例如，可以使用光學感測器來進行測量，光學感測器可以檢測基板10上的標記，例如凹口或平面（例如，圖3中的B）。基於底座上基板的絕對角度位置，控制器可以計算將基板裝載到承載頭140中時基板的絕對角度位置θ S。可以根據機器人184將基板從基座182移動到承載頭140時的預定運動，來確定θ P和θ S之間的差異，例如如果機器人184在移動基板時將基板10旋轉90°或180º角。
可以例如藉由光學地檢測承載頭140上的標記（例如位置A或C）或使用測量承載頭140旋轉的馬達編碼器188，來測量承載頭的絕對角定向θ H。
一旦確定了基板10的絕對角位置θ S以及基板10與承載頭140之間的所需相對角度θ D，就將承載頭140旋轉到一個絕對角方位，相對於基板10提供所需的角度θD，例如，θ H=θ S+θ D。控制器190可用於使用來自編碼器或光學監視器的反饋將承載頭140旋轉至適當的角度定向。
然後，控制器190可以使機械臂184將基板10從計量站180（例如，從基座182）轉移到承載頭140。
當將基板10裝載在承載頭140中時，在承載頭140中對基板10的研磨導致具有較低不對稱性的研磨輪廓，這是因為承載頭的去除輪廓減小了基板10的厚度輪廓的不對稱性。
測試基板10可用於確定承載頭140的去除輪廓。首先，在將基板10裝載到承載頭140中之前，感測器186可以測量基板10的預研磨厚度輪廓。例如，可以在計量站180處測量基板10的預研磨厚度輪廓。然後，使用機械臂184，可以將基板10從計量站180轉移並裝載到承載頭140中，在承載頭140中兩者都相對於彼此處於「零位置」（或其他已知位置和方向）。例如，基板10的位置標記B和承載頭140的位置標記A可以對準。然後可以在承載頭140中研磨基板10。研磨之後，可以使用機械臂184將基板10從承載頭140轉移到計量站180，在其中可以測量基板10的研磨後的厚度輪廓。然後，可以藉由比較研磨之前和之後的基板10的厚度輪廓來計算承載頭140的去除輪廓，例如從研磨後的輪廓中減去研磨前的輪廓。
當承載頭140磨損時，可以更換承載頭140。替換承載頭140還將具有唯一的去除輪廓。為了測量和校準每個承載頭140的去除輪廓，可以對基板（例如，用於每個替換承載頭140的測試基板）進行研磨，以確定承載頭140的去除輪廓。厚度輪廓和研磨輪廓的比較可以確定承載頭140的去除輪廓。例如，控制器190將在承載頭140中研磨之前基板10的厚度輪廓的測量結果與在承載頭140中研磨之後基板10的研磨的厚度輪廓進行比較。比較基板10的厚度輪廓和研磨輪廓，揭示出由於承載頭140（例如，由於承載頭140中的壓力的徑向輪廓）的去除輪廓。
本文所說明的系統的控制器與其他計算裝置部分，可被由數位電子電路系統實施，或由電腦軟體、韌體或硬體來實施。例如，控制器可包含處理器以執行如儲存在電腦程式產品中（例如在非暫態性機器可讀取儲存媒體中）的電腦程式。電腦程式（也稱為程式、軟體、軟體應用、或碼）可用任何形式的程式語言編寫，包括編譯或解釋語言，並且可以以任何形式部署，包括作為獨立程序或作為模組、部件、子程序、或其他適合在計算環境中使用的單元。
儘管本文件包含許多特定的實施細節，但是這些細節不應被解釋為對本揭示內容的任何具體實施例的範圍或可以請求的內容的限制，而是作為對特定發明的特定具體實施例特有的特徵的描述。本文件在個別具體實施例的背景內容中所說明的某些特徵，亦可被結合實施於單一具體實施例中。相對的，在單一具體實施例的背景內容中說明的各種特徵，亦可被個別地實施於多個具體實施例中或在任何適合的子結合中。再者，儘管上文可將特徵描述為以某些組合起作用並且甚至最初如此主張，但是來自所請求保護的組合的一個或多個特徵可以在一些情況下從組合中刪除，並且所請求保護的組合可以針對子組合或子組合的變化。
已說明了本發明的數個具體實施例。然而應瞭解到，可進行各種修改，而不脫離本發明的精神與範圍。因此，存在位於下列申請專利範圍的範圍內的其他實施方式。
10:基板 100:研磨系統 104:研磨設備 110:研磨墊 112:外側研磨層 114:背托層 118:實心窗 121:馬達 124:驅動軸 125:軸 130:通口 132:研磨液體 140:承載頭 142:固定環 144:膜 146a:腔室 146b:腔室 146c:腔室 150:支撐結構 152:驅動軸 154:馬達 155:軸 160:原位監測系統 162:光源 164:光檢測器 166:電路系統 170:光纖 180:計量站 182:底座 184:機器人 186:感測器 188:馬達編碼器 190:控制器
圖1是研磨系統的示意性截面圖。
圖2是基板裝載站和計量站以及研磨系統的示意圖。
圖3是定向在研磨系統的承載頭中的基板的示意性頂視圖。
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無
10:基板
104:研磨設備
110:研磨墊
140:承載頭
142:固定環
180:計量站
182:底座
184:機器人
186:感測器
188:馬達編碼器
190:控制器

Claims (9)

  1. 一種電腦可讀取媒體，該電腦可讀取媒體上有一電腦程式編碼於其中以用於控制一化學機械研磨系統，該電腦程式包含指令以： 接收對於一承載頭的一角度去除輪廓與一基板的一角度厚度輪廓； 在研磨該基板之前，基於該角度去除輪廓和該角度厚度輪廓來選擇該承載頭相對於該基板的一加載定向，該選擇包含計算對於複數個可能的加載定向的一角度不對稱性以及確定該複數個可能的加載定向中的一個加載定向相對於其他可能的加載定向具有減少的最終厚度輪廓中的角度不對稱性， 使該馬達旋轉該承載頭以使該承載頭處於該加載定向，以及 在該承載頭處於所選擇的該加載定向的情況下將該基板裝載到該承載頭中。
  2. 如請求項1所述之電腦可讀取媒體，該電腦可讀取媒體包含指令以：針對複數個角度差中的每個角度差，使用該角度差作為在該角度去除輪廓和該角度厚度輪廓之間的角度偏移來計算該角度去除輪廓與該角度厚度輪廓之間以及一最終厚度輪廓的一總厚度差。
  3. 如請求項2所述之電腦可讀取媒體，該電腦可讀取媒體包含指令以：從該複數個角度差中選擇具有最小總厚度差的一角度差。
  4. 如請求項2所述之電腦可讀取媒體，該電腦可讀取媒體包含指令以：基於所選擇的該角度差來確定該加載定向。
  5. 如請求項2所述之電腦可讀取媒體，該電腦可讀取媒體包含指令以：將該總厚度輪廓計算為該角度去除輪廓和該角度厚度輪廓之間的最小平方差之和。
  6. 如請求項1所述之電腦可讀取媒體，其中該等接收該基板的該角度厚度輪廓的指令包含指令以：接收來自一計量站的該角度厚度輪廓。
  7. 如請求項1所述之電腦可讀取媒體，該電腦可讀取媒體包含指令以：在將該基板裝載到該承載頭中之前接收該基板的一角度定向的一測量。
  8. 如請求項7所述之電腦可讀取媒體，該電腦可讀取媒體包含指令以：使一感測器測量該角度定向。
  9. 如請求項1所述之電腦可讀取媒體，該電腦可讀取媒體包含指令以：從一馬達編碼器接收該承載頭的一角位置的一測量。
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