TW202230561A - Degas chamber lift hoop - Google Patents
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本申請總體上係關於機器人抬升組件,且更具體地,係關於配備有多個指狀物以抬升及傳送晶圓的抬升箍組件。The present application relates generally to robotic lift assemblies, and more particularly, to lift hoop assemblies equipped with a plurality of fingers to lift and transfer wafers.
除氣室在本發明所屬技術領域中係為習知的,並且是半導體製造設備中的常用工具。除氣室係用於實施真空除氣,在該過程中,利用真空(通常與熱循環結合)來去除在製造過程中已被截留在半導體晶圓中的氣體。Degassing chambers are known in the art to which this invention pertains and are a common tool in semiconductor fabrication equipment. Degassing chambers are used to perform vacuum degassing, a process in which a vacuum (usually combined with thermal cycling) is used to remove gases that have been trapped in semiconductor wafers during fabrication.
在美國專利6,182,376(Shin等人)中公開了一種先前技術的除氣室的一個例子,其在本文的圖1-3中示出。其中示出的除氣室11包括真空室13,該真空室13包含加熱的基材支撐件15。設置有進氣口17,該進氣口將真空室13流體地連接到乾燥氣體源19。設置有出氣口21,該氣體出口21將真空室13流體地連接到氣泵23。An example of a prior art degassing chamber is disclosed in US Pat. No. 6,182,376 (Shin et al.), which is shown in FIGS. 1-3 herein. The
示出了晶圓25安裝在加熱的基材支撐件15上。複數個銷27位於晶圓25下方,以促進氣體沿著晶圓25的背面流動並減少晶圓25與基材支撐件15之間的接觸,從而減少了由這種接觸所引發的顆粒的產生。參照圖2可最佳地理解複數個銷27的定位。Wafer 25 is shown mounted on heated
為了容易地從加熱的基材支撐件15放置和取出晶圓,採用了常規的晶圓抬升箍29。這種抬升箍的操作在本發明所屬技術領域中是習知的。晶圓抬升箍29配備有在晶圓下方延伸的三個指狀物29a-c。這種配置旨在最小化顆粒的產生,而將晶圓接觸限制在三個指狀物29a-c上方的區域。更具體地,指狀物29a-c從晶圓抬升箍29向上延伸,並且具有晶圓架部分30,該晶圓架部分30較佳地向內延伸介於0.030-0.050英寸之間的水平距離。To easily place and remove wafers from the heated
除了在晶圓25下方延伸之外,指狀物29a-c還分別包括沿著晶圓25的邊緣延伸的側部31a-c(見圖2)。側部的構型旨在減小與其接觸可能發生的顆粒的產生。特別地,當將晶圓25放置在晶圓處理器(未示出)上或從晶圓處理器(未示出)上移出時,側部傾斜以避免與晶圓25的邊緣接觸。類似地,為了減少晶圓架部分30與晶圓25的背面之間的接觸,指狀物29a-c具有傾斜的下部33,該下部33以大於或等於10°的角度從晶圓架部分30傾斜地離開。由此,如果晶圓25將從晶圓架部分30滑落,則晶圓25將由傾斜的下部33支撐,由此防止晶圓從裝置上掉落。因此,即使在晶圓抬升箍29下降(且指狀物29a-c的水平部分係容納在基材支撐件15的表面中的適當定位的凹部中)之後,指狀物29a-c的側部30a-c仍可將晶圓抓取。此一佈置旨在防止晶圓偏離中心或離開基材支撐件15。In addition to extending below
在一態樣中,提供了一種抬升箍,其包括:(a)一框架,其係具有一中央開口;(b)複數個晶圓支撐結構,其係設置在所述框架上,其中,所述複數個晶圓支撐結構中的每一個包括一基座,其係附接到所述框架,以及一指狀物,其係附接到所述基座,且以所述中央開口的方向從所述基座延伸;(c) 一突起,其係設置在各個所述指狀物上;以及(d)一擋塊,其係設置在各個所述指狀物上,且與所述突起間隔,所述擋塊具有一非平面表面,其係面向該中央開口,且其包含一點,該點係形成所述擋塊與所述突起之間的最短距離;其中所述突起及所述擋塊中的至少一個具有小於20 Ra的表面粗糙度。In one aspect, there is provided a lift hoop comprising: (a) a frame having a central opening; (b) a plurality of wafer support structures disposed on the frame, wherein the Each of the plurality of wafer support structures includes a pedestal attached to the frame, and a finger attached to the pedestal and extending from the central opening in the direction of the central opening. the base extends; (c) a protrusion disposed on each of the fingers; and (d) a stop disposed on each of the fingers and spaced from the protrusion , the stopper has a non-planar surface which faces the central opening and which includes a point that forms the shortest distance between the stopper and the protrusion; wherein the protrusion and the stopper At least one of them has a surface roughness of less than 20 Ra.
在另一態樣中,提供了一種用於製造抬升箍的方法。該方法包括:(a)提供一框架,其係具有一中央開口;(b)在對該框架施加壓力的同時對該框架進行熱退火;(c)將複數個晶圓支撐結構可釋放地附接到所述框架,其中,所述複數個晶圓支撐結構中的每一個包括:(a)一基座,其係可移除地附接到所述框架;(b)一指狀物,其係附接到所述基座,且以所述中央開口的方向從所述基座延伸,(c) 一突起,其係設置在所述指狀物上,以及(d) 一擋塊,其係設置在所述指狀物上,且與所述突起間隔;其中所述突起和所述擋塊中的至少一個具有小於20 Ra的表面粗糙度。In another aspect, a method for making a lift hoop is provided. The method includes: (a) providing a frame having a central opening; (b) thermally annealing the frame while applying pressure to the frame; (c) releasably attaching a plurality of wafer support structures attached to the frame, wherein each of the plurality of wafer support structures includes: (a) a base removably attached to the frame; (b) a finger, it is attached to the base and extends from the base in the direction of the central opening, (c) a protrusion provided on the finger, and (d) a stop, It is disposed on the finger and is spaced from the protrusion; wherein at least one of the protrusion and the stop has a surface roughness of less than 20 Ra.
在另一態樣中,提供了一種用於將末端執行器葉片與除氣室對準的方法。該方法包括:(a)提供一末端執行器葉片,其係具有設置在其中的一鎖緊孔;(b)提供一除氣室,其係具有一抬升箍及一加熱器托架,其中,所述加熱器托架具有一平坦的表面,其中具有一位於中央的孔,且其中,所述抬升箍包括一框架,其係具有一中央開口,以及複數個晶圓支撐結構,其係設置在所述框架上,其中,所述複數個晶圓支撐結構中的每一個包括一基座,其係附接到所述框架,以及一指狀物,其係附接到所述基座,且以所述中央開口的方向從所述基座延伸,以及其中所述複數個晶圓支撐結構中的每一個還包括一突起,其係設置在所述指狀物上;(c)提供一固定裝置,其係具有一中心轂,該中心轂具有從其延伸的複數個臂,其中,所述轂在其中具有一中心孔,且其中,所述複數個臂中的每一個在其一末端部分具有一外圍孔;(d)將所述固定裝置放置在所述抬升箍上,使得每個所述外圍孔與所述指形物之一的一突起接合,並且使得所述固定裝置中的中心孔係與所述加熱器托架中的位於中心的孔同軸地對準;以及(e)操縱該末端執行器的位置,直到穿過所述轂的中心孔插入的一銷釘穿過所述末端執行器葉片中的鎖緊孔並進入所述加熱器托架的位於中心的孔中;其中所述突起具有小於20 Ra,較佳小於15 R,且最佳小於10 Ra的表面粗糙度。In another aspect, a method for aligning an end effector blade with a degassing chamber is provided. The method includes: (a) providing an end effector blade having a locking hole disposed therein; (b) providing a degassing chamber having a lift collar and a heater bracket, wherein, The heater bracket has a flat surface with a centrally located hole therein, and wherein the lift hoop includes a frame with a central opening, and a plurality of wafer support structures disposed in the on the frame, wherein each of the plurality of wafer support structures includes a base attached to the frame, and a finger attached to the base, and extending from the base in the direction of the central opening, and wherein each of the plurality of wafer support structures further includes a protrusion disposed on the fingers; (c) providing a securement A device having a central hub having a plurality of arms extending therefrom, wherein the hub has a central bore therein, and wherein each of the plurality of arms is at an end portion thereof having a peripheral hole; (d) placing the fixture on the lift hoop such that each of the peripheral holes engages a protrusion of one of the fingers and so that the center in the fixture holes aligned coaxially with the centrally located hole in the heater bracket; and (e) manipulating the position of the end effector until a pin inserted through the central hole of the hub passes through the end A locking hole in the actuator blade and into a centrally located hole in the heater bracket; wherein the protrusion has a surface roughness of less than 20 Ra, preferably less than 15 R, and most preferably less than 10 Ra.
儘管圖1-3中描繪的設備可以具有一些期望的屬性,但是它也具有許多弱點。這些弱點中的許多歸因於其中使用的抬升箍。While the device depicted in Figures 1-3 may have some desirable attributes, it also has a number of weaknesses. Many of these weaknesses are due to the lifting hoops used in them.
例如,由抬升箍的三個抬升指狀物形成的晶圓抓取區非常緊密。在許多300毫米晶圓實施中,晶圓抓取區僅比晶圓本身大出約0.63毫米。已經發現,由於抬升箍中的熱致翹曲,該已經有限的晶圓抓取區將進一步縮小。For example, the wafer gripping area formed by the three lift fingers of the lift collar is very tight. In many 300mm wafer implementations, the wafer gripping area is only about 0.63mm larger than the wafer itself. It has been found that this already limited wafer gripping area will shrink further due to thermally induced warpage in the lift collar.
此外,儘管圖1-3中描繪的裝置的設計旨在最小化顆粒的產生,但實際上,已經發現該裝置仍可能包含顯著地促進顆粒產生的多個特徵。例如,裝置上的指狀物的面向內的壁配備有平坦表面,該平坦表面與晶圓的邊緣顯著接觸。類似地,指狀物配備有晶圓放置在其上的凸出物。但是,這兩個表面通常都具有相對粗糙的加工面,這加劇了顆粒的產生。Furthermore, although the device depicted in Figures 1-3 is designed to minimize particle generation, in practice it has been found that the device may still contain a number of features that significantly facilitate particle generation. For example, the inward facing walls of the fingers on the device are provided with flat surfaces that make significant contact with the edge of the wafer. Similarly, the fingers are equipped with protrusions on which the wafer is placed. However, both surfaces typically have relatively rough machined surfaces, which exacerbate particle generation.
最後,用於對準抬升箍的標準操作程序(standard operating procedure, SOP)取決於技術人員的視力。這被發現將導致頻繁的晶圓錯位以及晶圓與抬升箍的指狀物壁之間的頻繁接觸,這又導致更多的顆粒產生。Finally, the standard operating procedure (SOP) for aligning the lifting cuff depends on the technician's vision. This was found to result in frequent wafer misalignment and frequent contact between the wafer and the finger walls of the lift collar, which in turn resulted in more particle generation.
現已發現,本文公開的裝置和方法可以克服一些或所有前述弱點。參照於本文附圖中描繪的實施例,可以理解這些設備和方法。It has now been discovered that the apparatus and methods disclosed herein can overcome some or all of the aforementioned weaknesses. These devices and methods can be understood with reference to the embodiments depicted in the figures herein.
圖4描繪了根據本文的教示的抬升箍的特定的非限制性實施例。如在其中看到的,所示的抬升箍101包括其中具有(較佳地為圓形的)中央開口105的框架103。複數個晶圓支撐結構107圍繞中心開口的外圍佈置在框架上。FIG. 4 depicts a specific non-limiting embodiment of a lift cuff in accordance with the teachings herein. As seen therein, the illustrated
晶圓支撐結構107在圖12-16中更詳細地示出。如在其中看到的,每個晶圓支撐結構107具有基座121,該基座121具有從基座121朝向中央開口105突出的指狀物123(見圖4)。基座121較佳地透過一個或複數個螺釘或其他合適的緊固件可釋放地附接到框架103(參見圖4)。每個指狀物123在其遠端上配備有(較佳為半球形的)突起125,該突起125支撐晶圓。每個指狀物123還配備有與突起125間隔的擋塊127。
晶圓支撐結構107的擋塊127具有(較佳地非平面的)接觸表面131。在所示的特定實施例中,該接觸表面131是斜角的或刻面的,儘管在其他實施例中可以是圓形的。然而,較佳地,接觸表面131包含一點或位置,該點或位置在所述擋塊和所述突起之間形成最短距離d(見圖15),且用來作為晶圓接觸表面(注意,該點或位置通常將位於與突起125相切並且與擋塊127的接觸表面131相交的平面)。不希望被理論所束縛,據信使用這種類型的接觸表面131透過在晶圓與擋塊127接觸的情況下提供較小的接觸面積來減少顆粒的產生。The
圖17-21示出了晶圓支撐結構207的另一實施例,該晶圓支撐結構207在某些應用中可以代替圖12-16的晶圓支撐結構107。與圖12-16的晶圓支撐結構107一樣,圖17-21的晶圓支撐結構207包括基座221,該基座221具有從其伸出的指狀物223。每個指狀物223在其上配備有支撐晶圓的突起225。然而,與圖12-16的晶圓支撐結構107中的半球形突起不同,在圖17-21的晶圓支撐結構207中,該突起225採取脊的形式。每個指狀物223還配備有與突起225間隔的擋塊227。晶圓支撐結構207的擋塊227具有(較佳為非平面的)接觸表面231。在所示的特定實施例中,該接觸表面231是斜角的或刻面的,儘管在其他實施例中可以是圓形的。FIGS. 17-21 illustrate another embodiment of a
圖6和9提供了圖12-16的晶圓支撐結構107(見圖6A和圖9A)與先前技術的晶圓支撐結構57(見圖9A和圖9B)之間的比較。圖9B的晶圓支撐結構57類似於圖2所示的晶圓支撐結構,但是其略有不同。如圖9所示,在圖4的抬升箍101中,突起125和擋塊127(見圖9A)的接觸表面131之間的間隔大於先前技術中突起65和擋塊67之間的間隔。在所圖示的特定實施例中,該差約為2.25 mm。6 and 9 provide a comparison between the
如圖5所示,間距上的這種差異對抬升箍的晶圓抓取區域具有重大影響。因此,儘管圖9B的抬升箍51具有直徑約為300.63的晶圓抓取區域104(其非常接近300mm +/- 0.2mm的晶圓直徑),但是圖9A的抬升箍101具有直徑約304.10毫米的晶圓抓取區域102,從而使抬升箍產生超過6倍的徑向遊隙。已發現到由圖9A的抬升箍101提供的晶圓抓取區域的增加大大減少了擋塊127與晶圓之間的接觸,從而減少了顆粒的產生,同時還允許順利地進行晶圓移交和毋庸顧慮的晶圓處理。 。As shown in Figure 5, this difference in spacing has a significant impact on the wafer gripping area of the lift ferrule. Thus, while the
再次參考圖9,儘管圖9B的晶圓支撐結構57的擋塊67具有平坦的接觸表面71,但相反地,圖9A的晶圓支撐結構107的擋塊127具有非平坦的接觸表面131。該非平坦表面可以是圓形的、斜角的或刻面的,但是較佳地包含在所述擋塊和所述突起之間形成最短距離的點。不希望受到理論的束縛,據信使用非平坦表面透過在晶圓與擋塊127接觸的情況下提供較小的接觸區域來減少顆粒的產生。Referring again to FIG. 9 , while the
擋塊127的非平坦接觸表面131和圖9A的晶圓支撐結構107上的突起125的表面較佳是光滑的。較佳地,這些表面具有透過ASME B46.1測量的表面粗糙度,該表面粗糙度在約20 Ra至約40 Ra的範圍內,更佳在約25 Ra至約35 Ra的範圍內,最佳為約32 Ra。這與圖9B的支撐結構57的相應的表面相反,其表面明顯地更為粗糙。不希望被理論所束縛,據信表面粗糙度的這種差異進一步使本文所述的裝置和方法中的顆粒減少最小化。The non-planar contact surfaces 131 of the
圖7-8示出了本文所述類型的抬升箍的較佳實施例的其他優點及其製造方法。由於抬升箍被設計用於除氣室,因此在正常使用期間會遇到明顯的熱梯度。但是,已經發現,在製造抬升箍時,沒有適當考慮這些熱梯度的影響。因此,如圖7所示,經常觀察到先前技術的抬升箍在整個熱循環中經歷顯著的變形(虛線表示了抬升箍的原始位置)。如圖7所見,這經常導致起抬升箍起皺,這是本發明所屬技術領域中稱為“馬鈴薯片化(potato chipping)”的現象。這種由熱引起的變形可能顯著地減小晶圓抓取區,可能在晶圓處理和移交操作期間不利地影響晶圓放置的精度,且因此可能有助於晶圓接觸和顆粒的產生。Figures 7-8 illustrate other advantages of preferred embodiments of a lift hoop of the type described herein, and methods of making the same. Since the lift hoop is designed to be used in the degassing chamber, significant thermal gradients are encountered during normal use. However, it has been found that the effects of these thermal gradients are not properly considered in the manufacture of the lift collar. Thus, as shown in Figure 7, it is often observed that the prior art lift hoop undergoes significant deformation throughout the thermal cycle (dotted line indicates the original position of the lift hoop). As seen in Figure 7, this often results in wrinkling of the lifting hoop, a phenomenon known in the art to which this invention pertains as "potato chipping". This thermally induced deformation can significantly reduce the wafer gripping area, can adversely affect the accuracy of wafer placement during wafer handling and handover operations, and thus can contribute to wafer contact and particle generation.
現已發現,透過在壓力下對抬升箍進行熱退火,可以顯著減少或消除這種由熱引起的變形。例如,這可以透過以下方式實現:將抬升箍(去除了晶圓支撐結構)放置在氣動夾具之間,然後將夾緊的抬升箍暴露於一個或複數個合適的熱循環中。這種熱循環較佳地類似於或大於在典型的除氣過程中(例如,200-450℃)抬升箍所遇到的熱循環。值得注意的是,此一過程透過去除晶圓支撐結構的能力而得以促進。相對而言,在OEM設備中,晶圓支撐結構被焊接到抬升箍上。因此,即使OEM設備經受了熱退火,永久固定的晶圓支撐結構的存在也會干擾該過程。此外,如果在熱退火之後焊接晶圓支撐結構,則可能失去熱退火的一些或全部優點,例如:由於在焊接操作期間組成金屬合金的再結晶。It has now been found that this thermally induced deformation can be significantly reduced or eliminated by thermally annealing the lift collar under pressure. This can be accomplished, for example, by placing the lift hoop (with wafer support structures removed) between pneumatic clamps and then exposing the clamped lift hoop to one or more suitable thermal cycles. This thermal cycle is preferably similar to or greater than that encountered during a typical degassing process (eg, 200-450°C) to lift the hoop. Notably, this process is facilitated by the ability to remove wafer support structures. In contrast, in OEM equipment, the wafer support structure is welded to the lift collar. Therefore, even if the OEM equipment is subjected to thermal annealing, the presence of permanently attached wafer support structures can interfere with the process. Furthermore, if the wafer support structure is soldered after thermal annealing, some or all of the benefits of thermal annealing may be lost, eg, due to recrystallization of constituent metal alloys during the soldering operation.
如圖8所示,此一熱退火過程被發現顯著地降低了整個抬升箍的熱變形。因此,其中描繪的曲線圖提供了OEM抬升箍和經受本文所述的熱退火過程的抬升箍的熱撓曲的測量。如其中所見,在抬升箍的每個點都觀察到了顯著的改善,並且觀察到熱引起的撓曲總體降低了76%。As shown in Figure 8, this thermal annealing process was found to significantly reduce the thermal deformation of the entire lift hoop. Accordingly, the graphs depicted therein provide a measure of thermal deflection of an OEM lift cuff and a lift cuff subjected to the thermal annealing process described herein. As seen therein, significant improvements were observed at every point of the lift hoop, and an overall 76% reduction in heat-induced deflection was observed.
先前技術的抬升箍設備遇到的另一個問題涉及對準。在使用過程中,使用末端執行器在除氣室內進行晶圓交接。為了確保適當的晶圓交接和均勻的晶圓處理,對於末端執行器葉片來說,將晶圓放置在除氣室的中心非常重要。這需要對準晶圓葉片、加熱器和抬升箍的幾何中心。目前,這通常是透過使用銷將末端執行器葉片與加熱器對準來實現的。特別地,銷穿過位於末端執行器葉片的幾何中心的第一孔延伸到位於加熱器的幾何中心的第二孔中。然而,將抬升箍與末端執行器葉片和加熱器對齊係依賴操作者的肉眼,因此無法確保重複性。由於抬升箍是配備有晶圓支撐結構的複雜的3維設備,使得情況更加複雜。Another problem encountered with prior art lift hoop devices relates to alignment. During use, wafer handover takes place within the degassing chamber using an end effector. To ensure proper wafer handover and uniform wafer handling, it is important for the end effector blade to place the wafer in the center of the degassing chamber. This requires alignment of the geometric centers of the wafer blades, heaters, and lift ferrules. Currently, this is usually accomplished by using pins to align the end effector blades with the heater. In particular, the pin extends through a first hole located in the geometric center of the end effector blade into a second hole located in the geometric center of the heater. However, aligning the lift hoop with the end effector blades and heater relies on the operator's naked eye and thus cannot ensure repeatability. The situation is further complicated by the fact that the lift hoop is a complex 3D device equipped with a wafer support structure.
現已發現,用圖11所示的特殊固定裝置可以克服上述問題。如圖所示,固定裝置401包括複數個從中心部分405徑向延伸的臂403。每個臂403具有一個端部,其係配備有孔406。中央部分405配備有中心孔407。It has now been found that the above-mentioned problems can be overcome with the special fixture shown in Figure 11 . As shown,
在使用中,當期望將末端執行器葉片411與除氣室加熱器托架413和抬升箍415對準時,將固定裝置401放置在抬升箍415的頂部,使得固定裝置的臂403上的孔401與晶圓支撐固定裝置上的突起對準(見圖9A)。然後,將(在OEM設備中用於將末端執行器葉片411與除氣室加熱器托架413對準的類型的)銷421穿過中心孔407,穿過在末端執行器葉片411中設置的孔423插入並進入在除氣室加熱器托架413上設置的一個孔(未示出)。以這種方式使用固定裝置可以在一次操作中將加熱器、末端執行器和抬升箍同時彼此對準。In use, when it is desired to align the
先前技術的抬升箍裝置遇到的另一個問題涉及表面光滑度。特別地,在先前技術的抬升箍51中的突起65和擋塊67中利用的突起和擋塊(見圖9)的表面粗糙度(通常大於20Ra)被發現會產生明顯的顆粒碎片。這種碎片給半導體加工設施和設備帶來了實質性的問題。現已發現,透過拋光這些特徵使得突起65和擋塊67之一或兩者的表面粗糙度小於20 Ra,更佳小於15 Ra,且最佳小於10 Ra,可以顯著地減少由這些特徵所產生的顆粒碎片的量。Another problem encountered with prior art lifting hoop arrangements relates to surface smoothness. In particular, the surface roughness (typically greater than 20 Ra) of the protrusions and blocks (see Figure 9) utilized in the
本文公開的裝置及其部件或部分可以具有某些裝飾性,非功能性特徵,這些特徵適於以設計保護。本發明所屬技術領域中具有通常知識者將理解,儘管這些設備以實線圖示出,但是在不脫離本發明範圍的情況下,可以不主張附圖中的各種特徵(即,可以在設計專利申請中以虛線圖呈現),或在不脫離本說明書範圍的情況下主張。類似地,在不脫離本說明書的範圍的情況下,可以在設計專利申請中主張或不主張這些特徵的各種組合。The devices disclosed herein, and components or parts thereof, may have certain decorative, non-functional features suitable for protection by design. It will be understood by those of ordinary skill in the art to which this invention pertains that although these devices are shown in solid line drawings, various features in the drawings may not be claimed without departing from the scope of the invention (ie, may be described in design patents presented in a dashed line diagram in the application), or claimed without departing from the scope of this specification. Similarly, various combinations of these features may or may not be claimed in a design patent application without departing from the scope of this specification.
本發明的以上描述是說明性的,而不是限制性的。因此,將理解的是,在不脫離本發明的範圍的情況下,可以對上述實施例進行各種添加、替換和修改。因此,本發明的範圍應參考所附的申請專利範圍來解釋。還應當理解,在不脫離本發明的範圍的情況下,可以在未來的請求項中以各種組合和子組合來呈現在請求項中闡述的各種特徵。特別地,本公開明確地設想了先前技術未知的任何這樣的組合或子組合,就如同這些組合或子組合被明確地寫出一樣。The foregoing description of the present invention is illustrative, not restrictive. Therefore, it will be understood that various additions, substitutions and modifications may be made to the above-described embodiments without departing from the scope of the present invention. Accordingly, the scope of the present invention should be construed with reference to the appended claims. It should also be understood that the various features set forth in the claims may be presented in various combinations and subcombinations in future claims without departing from the scope of the invention. In particular, this disclosure expressly contemplates any such combinations or subcombinations not known to the prior art, as if such combinations or subcombinations were expressly written.
11:除氣室
13:真空室
15:基材支撐件
17:進氣口
19:乾燥氣體源
21:出氣口
23:氣泵
25:晶圓
27a:銷
27b:銷
27c:銷
29:晶圓抬升箍
29a:指狀物
29b:指狀物
29c:指狀物
31a:側部
31b:側部
31c:側部
33c:下部
51:抬升箍
57:晶圓支撐結構
65:突起
67:擋塊
101:抬升箍
102:晶圓抓取區域
103:框架
104:晶圓抓取區域
105:中央開口
107:晶圓支撐結構
121:基座
123:指狀物
125:突起
127:擋塊
131:接觸表面
207:晶圓支撐結構
221:基座
223:指狀物
225:突起
227:擋塊
231:接觸表面
401:固定裝置
403:臂
405:中央部分
406:孔
407:中心孔
411:末端執行器葉片
413:除氣室加熱器托架
415:抬升箍
421:銷
423:孔
d:最短距離
11: Degassing chamber
13: Vacuum Chamber
15: Substrate support
17: Air intake
19: Drying gas source
21: Air outlet
23: Air pump
25:
[圖1]是先前技術的除氣設備的側視圖。 [圖2]是局部側視圖,其提供了圖1的除氣設備的晶圓抬升箍的更近的視圖。 [圖3]是圖1的除氣設備的基材支撐件的俯視圖。 [圖4]是根據本文的教示的除氣室抬升箍的特定的非限制性實施例的透視圖。 [圖5]是相較於先前技術的除氣室抬升箍,根據本文的教示的除氣室抬升箍的晶圓抓取區的圖式。 [圖6A]是根據本文的教示的晶圓抓取臂的透視圖,示出了其上安裝有晶圓。 [圖6B]是先前技術的晶圓抓取臂的透視圖,示出了其上安裝有晶圓。 [圖7]是先前技術的除氣抬升箍中的熱致翹曲的圖式。 [圖8]是比較在先前技術的除氣室抬升箍與根據本申請的除氣室抬升箍的各個部件中由熱引起的垂直撓曲的圖。 [圖9A]是根據本文的教示的抬升箍指狀物壁設計的透視圖。 [圖9B]是先前技術的抬升箍指狀物壁設計的透視圖。 [圖10]是用於使加熱器、末端執行器和抬升箍相對於彼此對準的固定裝置的透視圖。 [圖11]是示出在將加熱器、末端執行器和抬升箍相對於彼此對準的過程中使用圖10的固定裝置的透視圖。 [圖12-16]是根據本文的教示的用於除氣室抬升箍的晶圓支撐結構的第一特定的非限制性實施例的透視圖。 [圖17-21]是根據本文的教示的用於除氣室抬升箍的晶圓支撐結構的第二特定的非限制性實施例的透視圖。 [圖22]是圖4的除氣室抬升箍的俯視圖,其中晶圓支撐結構被去除。 [圖23]是圖22的除氣室抬升箍的仰視圖。 [圖24-25]是圖22的除氣室抬升箍的透視圖。 [FIG. 1] is a side view of a prior art degassing apparatus. [ FIG. 2 ] is a partial side view that provides a closer view of the wafer lift ferrule of the degassing apparatus of FIG. 1 . [ Fig. 3 ] is a plan view of a substrate support of the degassing apparatus of Fig. 1 . [FIG. 4] is a perspective view of a specific non-limiting embodiment of a degassing chamber lift collar in accordance with the teachings herein. [FIG. 5] is a diagram of the wafer grabbing area of a degassing chamber lift ferrule according to the teachings herein, compared to prior art degassing chamber lift ferrules. [FIG. 6A] is a perspective view of a wafer grabbing arm showing a wafer mounted thereon in accordance with the teachings herein. [ FIG. 6B ] is a perspective view of a prior art wafer grabbing arm showing a wafer mounted thereon. [FIG. 7] is a diagram of thermally induced warpage in a prior art degassing lift hoop. [ FIG. 8 ] is a graph comparing the vertical deflection caused by heat in various components of the degassing chamber lift hoop of the prior art and the degassing chamber lift hoop according to the present application. [FIG. 9A] is a perspective view of a lift hoop finger wall design in accordance with the teachings herein. [FIG. 9B] is a perspective view of a prior art lift hoop finger wall design. [FIG. 10] is a perspective view of a fixture for aligning the heater, end effector and lift hoop with respect to each other. [ FIG. 11 ] is a perspective view showing the use of the fixture of FIG. 10 in the process of aligning the heater, the end effector and the lifting hoop with respect to each other. [ FIGS. 12-16 ] are perspective views of a first specific, non-limiting embodiment of a wafer support structure for a degassing chamber lift ferrule in accordance with the teachings herein. [ FIGS. 17-21 ] are perspective views of a second specific non-limiting embodiment of a wafer support structure for a degassing chamber lift ferrule in accordance with the teachings herein. [FIG. 22] is a top view of the degassing chamber lift hoop of FIG. 4 with the wafer support structure removed. [ FIG. 23 ] is a bottom view of the degassing chamber lift hoop of FIG. 22 . [Figs. 24-25] are perspective views of the degassing chamber lift hoop of Fig. 22. [Figs.
101:抬升箍 101: Lifting hoop
103:框架 103: Frames
105:中央開口 105: Central opening
107:晶圓支撐結構 107: Wafer Support Structure
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