TW202229658A - Wetting method and plating device of substrate wherein the method includes a holding step, a supply step and two descending steps - Google Patents
Wetting method and plating device of substrate wherein the method includes a holding step, a supply step and two descending steps Download PDFInfo
- Publication number
- TW202229658A TW202229658A TW109146940A TW109146940A TW202229658A TW 202229658 A TW202229658 A TW 202229658A TW 109146940 A TW109146940 A TW 109146940A TW 109146940 A TW109146940 A TW 109146940A TW 202229658 A TW202229658 A TW 202229658A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- plating
- liquid
- plating solution
- holding member
- Prior art date
Links
Images
Landscapes
- Electroplating Methods And Accessories (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
本申請案係關於一種基板之接液方法及鍍覆裝置。The present application relates to a liquid contact method and a plating device for a substrate.
鍍覆裝置之一例習知有杯式之電解鍍覆裝置。杯式之電解鍍覆裝置係將被鍍覆面朝向下方,使保持於基板固持器之基板(例如半導體晶圓)浸漬於鍍覆液,並藉由在基板與陽極之間施加電壓,而使導電膜析出至基板表面。As an example of a plating apparatus, a cup-type electrolytic plating apparatus is known. The cup-type electrolytic plating device faces the surface to be plated downward, immerses the substrate (such as a semiconductor wafer) held in the substrate holder in the plating solution, and applies a voltage between the substrate and the anode to conduct electricity. The film is deposited on the surface of the substrate.
杯式之電解鍍覆裝置在使基板浸漬於鍍覆液時,氣泡容易附著於被鍍覆面,附著於被鍍覆面之氣泡會影響鍍覆性能因而不適宜。因此,例如專利文獻1中揭示有藉由使基板之被鍍覆面相對水平傾斜,而從傾斜之基板的下端側起依序接液於鍍覆液,使得附著於被鍍覆面之氣泡量降低。
[先前技術文獻]
[專利文獻]
When the cup-type electrolytic plating apparatus immerses the substrate in the plating solution, air bubbles tend to adhere to the surface to be plated, and the air bubbles adhering to the surface to be plated will affect the plating performance and are therefore unsuitable. Therefore, for example,
[專利文獻1]日本特開2008-19496號公報[Patent Document 1] Japanese Patent Laid-Open No. 2008-19496
(發明所欲解決之問題)(The problem that the invention intends to solve)
但是,習知技術為了降低附著於被鍍覆面之氣泡量,而造成電解鍍覆裝置的構造趨向複雜化。However, the conventional technique tends to complicate the structure of the electrolytic plating apparatus in order to reduce the amount of air bubbles adhering to the surface to be plated.
亦即,進行鍍覆處理時,由於陽極與基板之被鍍覆面宜形成平行,因此習知技術需要在使基板與鍍覆液接液時使基板傾斜,與鍍覆液接液後再將基板之傾斜復原的機構。此種機構會使電解鍍覆裝置之構造複雜化。That is, during the plating process, since the plated surfaces of the anode and the substrate should be parallel, the prior art requires the substrate to be inclined when the substrate is in contact with the plating solution, and then the substrate is placed in contact with the plating solution. The tilt recovery mechanism. Such a mechanism complicates the construction of the electrolytic plating apparatus.
因此,本申請案之一個目的為以簡單之構造降低附著於被鍍覆面的氣泡量。 (解決問題之技術手段) Therefore, an object of this application is to reduce the amount of air bubbles adhering to the surface to be plated with a simple structure. (Technical means to solve problems)
一個實施形態揭示一種基板之接液方法,係包含:保持步驟,其係以基板之被鍍覆面與收容於鍍覆槽之鍍覆液的液面相對之方式,藉由保持構件保持基板之背面;供給步驟,其係以鍍覆液向上在配置於前述鍍覆槽內之電阻體中央部的複數個貫穿孔中流通之方式,藉由在前述鍍覆槽內供給鍍覆液而使鍍覆液之液面中央部隆起;第一下降步驟,其係使用於支撐保持於前述保持構件之基板的被鍍覆面外緣部之支撐構件朝向前述鍍覆液之液面下降;及第二下降步驟,其係在藉由前述供給步驟使鍍覆液之液面中央部隆起的狀態下,以藉由前述第一下降步驟而下降之前述支撐構件與前述保持構件夾著前述基板的方式使前述保持構件下降。An embodiment discloses a method for contacting a substrate with liquid, comprising: a holding step of holding the back surface of the substrate by a holding member in such a way that the plated surface of the substrate is opposite to the liquid surface of the plating solution accommodated in the plating tank a supplying step, in which the plating solution flows upwardly through a plurality of through holes arranged in the central portion of the resistor body in the plating tank, by supplying the plating solution in the plating tank to make the plating solution The central portion of the liquid level of the liquid is raised; the first descending step is to descend the support member for supporting the outer edge portion of the plated surface of the substrate held by the holding member toward the liquid level of the plating liquid; and the second descending step wherein the support member and the holding member lowered by the first lowering step sandwich the substrate in a state where the central portion of the liquid surface of the plating solution is raised by the supplying step. Component descends.
以下,參照圖式說明本發明之實施形態。以下說明之圖式中,在相同或相當之元件上註記相同符號,並省略重複之說明。 <鍍覆裝置之整體構成> Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding elements are denoted by the same symbols, and repeated descriptions are omitted. <The overall structure of the coating device>
圖1係顯示本實施形態之鍍覆裝置的整體構成立體圖。圖2係顯示本實施形態之鍍覆裝置的整體構成俯視圖。如圖1、2所示,鍍覆裝置1000具備:裝載埠100、搬送機器人110、對準器120、預濕模組200、預浸模組300、鍍覆模組400、清洗模組500、自旋沖洗乾燥器600、搬送裝置700、及控制模組800。FIG. 1 is a perspective view showing the overall configuration of the coating apparatus of the present embodiment. FIG. 2 is a plan view showing the overall configuration of the coating apparatus of the present embodiment. As shown in FIGS. 1 and 2 , the
裝載埠100係用於將收納於無圖示之FOUP(前開式晶圓傳送盒)等的匣盒之基板搬入鍍覆裝置1000,或是從鍍覆裝置1000搬出基板至匣盒的模組。本實施形態係在水平方向並列配置4台裝載埠100,不過裝載埠100之數量及配置不拘。搬送機器人110係用於搬送基板之機器人,且以在裝載埠100、對準器120、及搬送裝置700之間交接基板的方式構成。搬送機器人110及搬送裝置700在搬送機器人110與搬送裝置700之間交接基板時,可經由無圖示之暫置台進行基板的交接。The
對準器120係用於使基板之定向平面及凹槽等的位置對準指定方向之模組。本實施形態係在水平方向並列配置2台對準器120,不過對準器120之數量及配置不拘。預濕模組200藉由以純水或脫氣水等之處理液濕潤鍍覆處理前之基板的被鍍覆面,而將形成於基板表面之圖案內部的空氣替換成處理液。預濕模組200係以在鍍覆時藉由將圖案內部之處理液替換成鍍覆液,來實施容易在圖案內部供給鍍覆液之預濕處理的方式構成。本實施形態係在上下方向並列配置2台預濕模組200,不過預濕模組200之數量及配置不拘。The
預浸模組300係以硫酸及鹽酸等處理液蝕刻除去例如形成於鍍覆處理前之基板被鍍覆面的種層表面等上所存在的大電阻氧化膜進行清洗或活化,並對鍍覆基底表面實施預浸處理的方式構成。本實施形態係在上下方向並列配置2台預浸模組300,不過預浸模組300之數量及配置不拘。鍍覆模組400係對基板實施鍍覆處理。本實施形態有2組在上下方向並列配置3台且在水平方向並列配置4台之12台的鍍覆模組400,合計設有24台的鍍覆模組400,不過鍍覆模組400之數量及配置不拘。The
清洗模組500係以為了除去殘留於鍍覆處理後之基板上的鍍覆液等而對基板實施清洗處理的方式構成。本實施形態係在上下方向並列配置2台清洗模組500,不過清洗模組500之數量及配置不拘。自旋沖洗乾燥器600係用於使清洗處理後之基板高速旋轉而乾燥的模組。本實施形態係在上下方向並列配置2台自旋沖洗乾燥器,不過自旋沖洗乾燥器之數量及配置不拘。搬送裝置700係用於在鍍覆裝置1000中之複數個模組間搬送基板的裝置。控制模組800係以控制鍍覆裝置1000之複數個模組的方式構成,例如可由具備與作業人員間之輸入輸出介面的一般電腦或專用電腦而構成。The
以下說明藉由鍍覆裝置1000之一連串鍍覆處理的一例。首先,將收納於匣盒之基板搬入裝載埠100。接著,搬送機器人110從裝載埠100之匣盒取出基板,並將基板搬送至對準器120。對準器120使基板之定向平面及凹槽等的位置對準指定方向。搬送機器人110將以對準器120對準方向後之基板送交搬送裝置700。An example of a serial plating process by the plating
搬送裝置700將從搬送機器人110接收之基板搬送至預濕模組200。預濕模組200對基板實施預濕處理。搬送裝置700將實施預濕處理後之基板搬送至預浸模組300。預浸模組300對基板實施預浸處理。搬送裝置700將實施預浸處理後之基板搬送至鍍覆模組400。鍍覆模組400對基板實施鍍覆處理。The
搬送裝置700將實施鍍覆處理後之基板搬送至清洗模組500。清洗模組500對基板實施清洗處理。搬送裝置700將實施清洗處理後之基板搬送至自旋沖洗乾燥器600。自旋沖洗乾燥器600對基板實施乾燥處理。搬送裝置700將實施乾燥處理後之基板送交搬送機器人110。搬送機器人110將從搬送裝置700接收之基板搬送至裝載埠100的匣盒。最後,從裝載埠100搬出收納了基板之匣盒。
<鍍覆模組之構成>
The
其次,說明鍍覆模組400之構成。本實施形態中之24台鍍覆模組400係相同構成,因此僅說明單一台鍍覆模組400。Next, the structure of the
圖3係概略顯示本實施形態之鍍覆模組構成的縱剖面圖,且顯示未保持基板之狀態。圖4係概略顯示本實施形態之鍍覆模組構成的縱剖面圖,且顯示保持了基板之狀態。如圖3及圖4所示,鍍覆模組400具備用於收容鍍覆液之鍍覆槽410。此外,鍍覆模組400具備在將被鍍覆面Wf-a朝向下方而與鍍覆液之液面相對的狀態下用於保持基板Wf之背面的基板固持器440。基板固持器440具備用於從無圖示之電源饋電至基板Wf的饋電接點。FIG. 3 is a longitudinal sectional view schematically showing the structure of the plating module of the present embodiment, and shows a state in which the substrate is not held. FIG. 4 is a longitudinal sectional view schematically showing the structure of the plating module of the present embodiment, and shows a state in which the substrate is held. As shown in FIGS. 3 and 4 , the
此外,鍍覆模組400具備將鍍覆槽410之內部在上下方向隔開的隔膜420。鍍覆槽410之內部藉由隔膜420分隔成陰極區域422與陽極區域424。在陽極區域424之鍍覆槽410的底面設置陽極430。在陰極區域422與隔膜420相對配置電阻體450。電阻體450藉由形成有複數個貫穿孔450a的板狀構件而構成。複數個貫穿孔450a分布在對應於基板Wf之被鍍覆面Wf-a的區域。各貫穿孔450a連通電阻體450之上部區域與下部區域。電阻體450係用於尋求在基板Wf之被鍍覆面Wf-a上達成鍍覆膜厚均勻化的構件。亦即,由於饋電接點係設於基板Wf之外緣部,因此,因為基板Wf之外緣部與中央部之間的電阻造成電場集中於基板Wf之外緣部,結果基板Wf之外緣部的鍍覆膜厚變大。關於這一點,藉由在陽極430與基板Wf之間設置電阻體450,可抑制電場向基板Wf之外緣部集中,而尋求在基板Wf之被鍍覆面Wf-a上達成鍍覆膜厚均勻化。In addition, the
基板固持器440具備用於支撐基板Wf之被鍍覆面Wf-a的外緣部之支撐構件442。支撐構件442具備:具有與基板Wf之被鍍覆面Wf-a的外緣部相對之支撐面449a的密封環固持器449;配置於支撐面449a之環狀的密封構件445;及用於將密封環固持器449保持於無圖示之基板固持器本體的框架446。The board|
此外,基板固持器440具備用於保持基板Wf之被鍍覆面Wf-a的背面之保持構件441。保持構件441具備:以吸附保持基板Wf之被鍍覆面Wf-a的背面之方式構成的背面板444;及安裝於背面板444之基板保持面的背面之軸桿448。背面板444連接於無圖示之真空源,並以藉由來自真空源之真空吸引而吸附保持基板Wf之背面的方式構成。Moreover, the board|
鍍覆模組400具備:用於使基板固持器440升降之升降機構443;及以基板Wf在軸桿448之假設軸(將被鍍覆面Wf-a之中央垂直地伸長的假設性旋轉軸)之周圍旋轉的方式用於使基板固持器440旋轉之旋轉機構447。升降機構443及旋轉機構447例如可藉由馬達等習知之機構來實現。鍍覆模組400係以使用升降機構443將基板Wf浸漬於陰極區域422之鍍覆液中,藉由在陽極430與基板Wf之間施加電壓,而在基板Wf之被鍍覆面Wf-a上實施鍍覆處理的方式構成。The
在陰極區域422與陽極區域424中分別充填鍍覆液。具體而言,鍍覆模組400具備以朝向電阻體450之下部區域中央部供給鍍覆液的方式構成之鍍覆液供給構件425。鍍覆液供給構件425具備:朝向陰極區域422之電阻體450的下部區域中央部開口之複數個噴嘴426;及用於經由複數個噴嘴426而在陰極區域422中供給鍍覆液之供給源428。複數個噴嘴426沿著周方向配置於比電阻體450下部之鍍覆槽410的側壁。鍍覆模組400就陽極區域424亦同樣地在陽極區域424中具備用於供給鍍覆液之機構,不過此處省略圖示。The
複數個噴嘴426係以朝向電阻體450之下部區域中央部斜上方地供給鍍覆液的方式構成。在鍍覆槽410中充填了鍍覆液後,進一步藉由從複數個噴嘴426供給鍍覆液,而與從複數個噴嘴426所供給之鍍覆液在電阻體450的下部區域中央部碰撞而形成亂流,並且形成藉由向上通過電阻體450之複數個貫穿孔450a而整流後的鍍覆液之上升流。結果,如圖3及圖4所示,鍍覆液之液面的中央部隆起。The plurality of
升降機構443係以使密封環固持器449及背面板444個別地升降之方式構成。具體而言,升降機構443具備:用於使密封環固持器449升降之第一升降構件443-1;及用於使背面板444升降之第二升降構件443-2。The elevating
圖5係概略顯示本實施形態之鍍覆模組的構成之縱剖面圖,且顯示使密封環固持器下降之狀態。如圖5所示,第一升降構件443-1係以使密封環固持器449下降至用於使基板Wf之被鍍覆面Wf-a接液於鍍覆液之液面的接液位置之方式構成。此處,所謂接液位置,係密封構件445比鍍覆液之液面隆起的部分LL-a(隆起的部分LL-a之最高部分)低,且比鍍覆液之液面未隆起的部分LL-b高的位置。FIG. 5 is a longitudinal sectional view schematically showing the structure of the coating module of the present embodiment, and shows a state in which the seal ring holder is lowered. As shown in FIG. 5, the first elevating member 443-1 lowers the
圖6係概略顯示本實施形態之鍍覆模組的構成之縱剖面圖,且顯示使背面板下降而使基板接液之狀態。圖7係概略顯示本實施形態之鍍覆模組的構成之縱剖面圖,且顯示使背面板下降而抽出空氣之狀態。圖8係概略顯示本實施形態之鍍覆模組的構成之縱剖面圖,且顯示使背面板下降而密封基板之狀態。FIG. 6 is a longitudinal sectional view schematically showing the structure of the plating module of the present embodiment, and shows a state in which the back plate is lowered and the substrate is brought into contact with the liquid. FIG. 7 is a longitudinal cross-sectional view schematically showing the structure of the coating module of the present embodiment, and shows a state in which the rear panel is lowered to extract air. FIG. 8 is a longitudinal cross-sectional view schematically showing the structure of the plating module of the present embodiment, and shows a state in which the back plate is lowered to seal the substrate.
第二升降構件443-2以藉由背面板444與密封環固持器449夾著基板Wf之方式使背面板444下降。具體而言,首先,如圖6所示,第二升降構件443-2使背面板444下降至基板Wf之被鍍覆面Wf-a的中央部接觸到鍍覆液之液面隆起的部分LL-a。繼續,如圖7所示,第二升降構件443-2係以使鍍覆液之液面隆起的部分LL-a在基板Wf之被鍍覆面Wf-a的外周方向擴大之方式而使背面板444逐漸下降。The second elevating member 443 - 2 lowers the
藉此,在鍍覆液之液面與基板Wf的被鍍覆面Wf-a之間的空氣被推向被鍍覆面Wf-a之外周測,並通過被鍍覆面Wf-a與密封構件445之間而排出。繼續如圖8所示,第二升降構件443-2藉由使背面板444下降直到基板Wf之被鍍覆面Wf-a的外緣部與密封構件445接觸,而密封被鍍覆面Wf-a。基板Wf之被鍍覆面Wf-a被密封後,第一升降構件443-1及第二升降構件443-2係以使基板Wf下降至用於執行鍍覆處理之指定位置的方式構成。Thereby, the air between the liquid level of the plating solution and the plating surface Wf-a of the substrate Wf is pushed toward the outer periphery of the plating surface Wf-a, and passes through the space between the plating surface Wf-a and the sealing
如以上所述,採用本實施形態之鍍覆模組400時,由於可藉由從複數個噴嘴426朝向電阻體450之下部區域供給鍍覆液,而形成經由電阻體450之複數個貫穿孔450a而朝向電阻體450的上部區域整流之上升流,因此可使鍍覆液之液面中央部有效隆起。此外,採用本實施形態之鍍覆模組400時,藉由使鍍覆液之液面中央部隆起,並且將隆起的部分LL-a之鍍覆液在被鍍覆面Wf-a之外周方向擴大,而且使基板Wf下降,可從被鍍覆面Wf-a排除會附著於被鍍覆面Wf-a之空氣。結果,採用本實施形態之鍍覆模組400時,無須使用諸如用於使基板Wf傾斜而浸漬於鍍覆液之傾斜機構的複雜機構,藉由簡單之機構構成即可降低附著於基板Wf之被鍍覆面Wf-a的氣泡量。As described above, when the
其次,說明使用本實施形態之鍍覆模組400的基板之接液方法。圖9係本實施形態的基板之接液方法的流程圖。Next, the liquid contact method of the board|substrate using the
本實施形態的基板之接液方法,首先如圖4所示,以基板Wf之被鍍覆面Wf-a與鍍覆液的液面相對之方式保持基板Wf的背面(保持步驟102)。保持步驟102藉由使用背面板444之真空吸附而保持基板Wf的背面。The substrate liquid contact method of the present embodiment firstly holds the back surface of the substrate Wf such that the plating surface Wf-a of the substrate Wf faces the liquid surface of the plating solution as shown in FIG. 4 (holding step 102). The holding
繼續,基板之接液方法如圖4所示,係以藉由鍍覆液向上而在電阻體450之中央部的複數個貫穿孔450a中流通之方式在鍍覆槽410中供給鍍覆液,而使鍍覆液之液面中央部隆起(供給步驟104)。供給步驟104包含從沿著周方向配置於鍍覆槽410之側壁的複數個噴嘴426朝向電阻體450之下部區域中央部供給鍍覆液的步驟。藉此,從複數個噴嘴426所供給之鍍覆液在電阻體450之下部區域中央部碰撞而形成亂流,並且形成藉由向上在電阻體450之複數個貫穿孔450a中流通而整流的上升流。結果,如圖4所示,鍍覆液之液面中央部隆起。另外,保持步驟102與供給步驟104之執行順序亦可替換,亦可同時執行。Continuing, as shown in FIG. 4 , the liquid contacting method of the substrate is to supply the plating liquid in the
繼續,基板之接液方法如圖5所示,使密封環固持器449朝向鍍覆液之液面下降(第一下降步驟106)。第一下降步驟106包含使密封環固持器449下降至密封構件445比鍍覆液之液面隆起的部分LL-a低,且比鍍覆液之液面未隆起的部分LL-b高的接液位置。換言之,第一下降步驟106包含以密封構件445位於鍍覆液之液面隆起的部分LL-a與未隆起的部分LL-b之間的方式使密封環固持器449下降的步驟。此因,若密封構件445比鍍覆液之液面隆起的部分LL-a高,則無法抽出會附著於基板Wf之被鍍覆面Wf-a的空氣,而若密封構件445比鍍覆液之液面未隆起的部分LL-b低,則鍍覆液會侵入密封環固持器449之支撐面449a。另外,第一下降步驟106亦可比保持步驟102及供給步驟104提前執行,亦可與保持步驟102及供給步驟104同時執行。Continuing, as shown in FIG. 5 , the liquid contacting method of the substrate is performed by lowering the
繼續,基板之接液方法在藉由供給步驟104使鍍覆液之液面中央部隆起的狀態下,以藉由背面板444與密封環固持器449夾著基板Wf之方式使背面板444下降(第二下降步驟108)。第二下降步驟108如圖6所示,包含以基板Wf之被鍍覆面Wf-a的中央部與藉由供給步驟104而鍍覆液之液面隆起的部分LL-a接液之方式使背面板444下降的步驟。此外,第二下降步驟108如圖7及圖8所示,包含使背面板444下降至基板Wf之被鍍覆面Wf-a的外緣部與密封構件445接觸的步驟。Continuing, in the liquid contact method of the substrate, the
繼續,基板之接液方法係以在用於執行鍍覆處理之指定位置配置基板Wf的方式,使背面板444及密封環固持器449一起下降(第三下降步驟110)。將基板Wf配置於指定位置後,鍍覆模組400對基板Wf實施鍍覆處理。Continuing, the substrate wetted method is to lower the
採用本實施形態的基板之接液方法時,藉由使鍍覆液之液面中央部隆起,並且使隆起的部分LL-a之鍍覆液在被鍍覆面Wf-a的外周方向擴大,而且使基板Wf下降,可從被鍍覆面Wf-a排除會附著於被鍍覆面Wf-a之空氣。結果,採用本實施形態的基板之接液方法時,不使用如用於使基板Wf傾斜而浸漬於鍍覆液之傾斜機構的複雜機構,可以簡單之構成降低附著於基板Wf之被鍍覆面Wf-a的氣泡量。In the case of using the substrate liquid contact method of the present embodiment, the center portion of the liquid surface of the plating solution is raised, and the raised portion LL-a of the plating solution is expanded in the outer peripheral direction of the plating surface Wf-a, and further By lowering the substrate Wf, the air adhering to the plating surface Wf-a can be removed from the plating surface Wf-a. As a result, when the substrate liquid contact method of the present embodiment is employed, a complicated mechanism such as a tilting mechanism for tilting the substrate Wf and immersing it in the plating solution is not used, and the plated surface Wf adhering to the substrate Wf can be reduced in a simple configuration. - the amount of air bubbles in a.
以上,係說明本發明之一些實施形態,不過上述發明之實施形態是為了容易瞭解本發明者,而並非限定本發明者。本發明在不脫離其旨趣範圍內可變更、改良,並且本發明中當然包含其等效物。此外,在可解決上述問題之至少一部分範圍內,或是可達成效果之至少一部分的範圍內,申請專利範圍及說明書中記載之各元件可任意組合或省略。Although some embodiments of the present invention have been described above, the embodiments of the present invention described above are for the purpose of facilitating the understanding of the present invention and are not intended to limit the present invention. The present invention can be changed and improved without departing from the scope of the gist, and it is needless to say that the equivalents thereof are included in the present invention. In addition, within the scope of at least a part of solving the above problems, or the scope of achieving at least a part of the effect, the various elements described in the scope of the patent application and the specification can be arbitrarily combined or omitted.
本申請案一個實施形態揭示一種基板之接液方法,係包含:保持步驟,其係以基板之被鍍覆面與收容於鍍覆槽之鍍覆液的液面相對之方式,藉由保持構件保持基板之背面;供給步驟,其係以鍍覆液向上在配置於前述鍍覆槽內之電阻體中央部的複數個貫穿孔中流通之方式,藉由在前述鍍覆槽內供給鍍覆液而使鍍覆液之液面中央部隆起;第一下降步驟,其係使用於支撐保持於前述保持構件之基板的被鍍覆面外緣部之支撐構件朝向前述鍍覆液之液面下降;及第二下降步驟,其係在藉由前述供給步驟使鍍覆液之液面中央部隆起的狀態下,以藉由前述第一下降步驟而下降之前述支撐構件與前述保持構件夾著前述基板的方式使前述保持構件下降。An embodiment of the present application discloses a method for contacting a substrate with liquid, which includes: a holding step, which is held by a holding member in such a way that the plated surface of the substrate is opposite to the liquid surface of the plating solution accommodated in the plating tank The back surface of the substrate; the supplying step is to supply the plating solution in the plating tank by supplying the plating liquid in the plating tank in such a way that the plating liquid flows upward through a plurality of through holes arranged in the central part of the resistor body in the plating tank the center portion of the liquid surface of the plating solution is raised; the first descending step is to lower the support member for supporting the outer edge portion of the plated surface of the substrate held by the holding member toward the liquid level of the plating solution; and the first step of descending A second lowering step in which the support member and the holding member lowered by the first lowering step sandwich the substrate in a state where the center portion of the liquid surface of the plating solution is raised in the supplying step. The aforementioned holding member is lowered.
再者,本申請案一個實施形態揭示一種基板之接液方法,其中前述第一下降步驟包含使前述支撐構件下降至以密封前述基板之被鍍覆面的外緣部之方式而構成的前述支撐構件之密封構件比前述鍍覆液之液面隆起部分低,且比前述鍍覆液之液面未隆起部分高的接液位置之步驟。Furthermore, an embodiment of the present application discloses a method for contacting a substrate with liquid, wherein the first lowering step includes lowering the supporting member to the supporting member formed so as to seal the outer edge portion of the plated surface of the substrate. The sealing member is lower than the raised portion of the liquid level of the plating solution, and is higher than the non-raised portion of the liquid level of the plating solution.
再者,本申請案一個實施形態揭示一種基板之接液方法,其中前述第二下降步驟包含以下步驟:以前述基板之被鍍覆面的中央部與藉由前述供給步驟而前述鍍覆液之液面隆起部分接液的方式使前述保持構件下降;及使前述保持構件下降至前述基板之被鍍覆面的外緣部與前述密封構件接觸。Furthermore, an embodiment of the present application discloses a liquid contact method for a substrate, wherein the second descending step includes the following steps: using the center portion of the plated surface of the substrate and the liquid of the plating solution through the supplying step. The holding member is lowered so that the raised portion of the surface is in contact with the liquid; and the holding member is lowered so that the outer edge portion of the plated surface of the substrate comes into contact with the sealing member.
再者,本申請案一個實施形態揭示一種基板之接液方法,其中前述供給步驟包含從沿著周方向配置於前述鍍覆槽側壁之複數個噴嘴朝向前述電阻體之下部區域的中央部供給鍍覆液之步驟。Furthermore, an embodiment of the present application discloses a method for contacting a substrate with liquid, wherein the supplying step includes supplying plating from a plurality of nozzles arranged on the sidewall of the plating tank along the circumferential direction toward the center of the lower region of the resistor body. The steps of immersion.
再者,本申請案一個實施形態揭示一種基板之接液方法,其中前述保持步驟包含使用前述保持構件吸附保持前述基板之被鍍覆面的背面之步驟。Furthermore, an embodiment of the present application discloses a method for contacting a substrate with liquid, wherein the holding step includes the step of using the holding member to adsorb and hold the back surface of the plated surface of the substrate.
再者,本申請案一個實施形態揭示一種鍍覆裝置,係包含:鍍覆槽,其係用於收容鍍覆液;保持構件,其係用於以基板之被鍍覆面與收容於前述鍍覆槽之鍍覆液的液面相對之方式保持基板的背面;支撐構件,其係用於支撐被前述保持構件所保持之基板的被鍍覆面之外緣部;升降機構,其係用於使前述保持構件及前述支撐構件個別地升降;電阻體,其係以與前述基板之被鍍覆面相對的方式配置於前述鍍覆槽內,且形成有連通前述電阻體之下部區域與上部區域的複數個貫穿孔;及鍍覆液供給構件,其係以朝向前述電阻體之下部區域中央部供給鍍覆液的方式構成。Furthermore, an embodiment of the present application discloses a plating apparatus, which includes: a plating tank for accommodating a plating solution; a holding member for accommodating the plated surface of the substrate and the plated surface. The back surface of the substrate is held in such a way that the liquid level of the plating solution in the tank is opposite; the supporting member is used to support the outer edge portion of the plated surface of the substrate held by the above-mentioned holding member; the lifting mechanism is used to make the above-mentioned The holding member and the aforementioned supporting member are individually lifted and lowered; the resistor body is arranged in the aforementioned plating tank in a manner opposite to the plated surface of the aforementioned substrate, and a plurality of resistors are formed which communicate with the lower region and the upper region of the aforementioned resistor body a through hole; and a plating solution supply member configured to supply the plating solution toward the center of the lower region of the resistor body.
再者,本申請案一個實施形態揭示一種鍍覆裝置,其中前述升降機構包含:第一升降構件,其係使前述支撐構件下降至用於使前述基板之被鍍覆面接液於鍍覆液的液面之接液位置;及第二升降構件,其係以藉由前述第一升降構件下降至前述接液位置之前述支撐構件與前述保持構件夾著基板的方式使前述保持構件下降。Furthermore, an embodiment of the present application discloses a plating apparatus, wherein the elevating mechanism includes: a first elevating member that lowers the supporting member to a position for making the plated surface of the substrate contact the plating solution. a liquid contact position of the liquid level; and a second lift member that lowers the holding member so that the support member and the holding member sandwiched between the substrate by the first lift member descended to the liquid contact position.
再者,本申請案一個實施形態揭示一種鍍覆裝置,其中前述支撐構件包含:密封環固持器,其係具有與前述基板之被鍍覆面的外緣部相對之支撐面;及密封構件,其係配置於前述支撐面;前述接液位置係前述密封構件比藉由從前述鍍覆液供給構件供給鍍覆液而鍍覆液之液面中央隆起的部分低,且前述密封構件比前述鍍覆液之液面未隆起的部分高之位置,第二升降構件係以使前述保持構件下降至前述密封構件與前述基板之被鍍覆面的外緣部接觸之方式構成。Furthermore, an embodiment of the present application discloses a coating apparatus, wherein the supporting member includes: a sealing ring holder having a supporting surface opposite to an outer edge portion of the plated surface of the substrate; and a sealing member, which It is arranged on the support surface; the liquid contact position is that the sealing member is lower than the portion where the center of the liquid surface of the plating solution is raised by supplying the plating solution from the plating solution supply member, and the sealing member is lower than the plating solution. At a position where the liquid level of the liquid is not elevated, the second lifting member is configured to lower the holding member so that the sealing member comes into contact with the outer edge of the plated surface of the substrate.
再者,本申請案一個實施形態揭示一種鍍覆裝置,其中前述鍍覆液供給構件包含:複數個噴嘴,其係沿著周方向配置於前述鍍覆槽之側壁;及供給源,其係用於從前述複數個噴嘴供給鍍覆液。Furthermore, an embodiment of the present application discloses a plating apparatus, wherein the plating solution supply member includes: a plurality of nozzles arranged on the side wall of the plating tank along the circumferential direction; and a supply source, which is used for The plating solution is supplied from the plurality of nozzles.
再者,本申請案一個實施形態揭示一種鍍覆裝置,其中前述複數個噴嘴係以朝向前述電阻體之下部區域的中央部斜上方供給鍍覆液,而使前述鍍覆液之液面中央部隆起的方式構成。Furthermore, an embodiment of the present application discloses a plating apparatus, wherein the plurality of nozzles supply the plating solution obliquely upward toward the center portion of the lower region of the resistor body, so that the center portion of the liquid surface of the plating solution is formed. Constructed in a raised manner.
再者,本申請案一個實施形態揭示一種鍍覆裝置,其中前述保持構件包含背面板,其係以吸附保持前述基板之被鍍覆面的背面之方式構成。Furthermore, one embodiment of the present application discloses a plating apparatus in which the holding member includes a back surface plate configured to adsorb and hold the back surface of the plated surface of the substrate.
再者,本申請案一個實施形態揭示一種鍍覆裝置,其中前述電阻體係以與前述基板之被鍍覆面相對的方式設於前述鍍覆槽內之板狀構件,並在對應於前述基板之被鍍覆面的區域形成有前述複數個貫穿孔。Furthermore, an embodiment of the present application discloses a plating apparatus, wherein the resistance system is disposed in the plate-like member in the plating tank in a manner opposite to the plated surface of the substrate, and is disposed in the plating corresponding to the substrate. The above-mentioned plurality of through holes are formed in the area of the plated surface.
100:裝載埠
102:保持步驟
104:供給步驟
106:第一下降步驟
108:第二下降步驟
110:搬送機器人,第三下降步驟
120:對準器
200:預濕模組
300:預浸模組
400:鍍覆模組
410:鍍覆槽
420:隔膜
422:陰極區域
424:陽極區域
425:鍍覆液供給構件
426:噴嘴
428:供給源
430:陽極
440:基板固持器
441:保持構件
442:支撐構件
443:升降機構
443-1:第一升降構件
443-2:第二升降構件
444:背面板
445:密封構件
446:框架
447:旋轉機構
448:軸桿
449:密封環固持器
449a:支撐面
450:電阻體
450a:貫穿孔
500:清洗模組
600:自旋沖洗乾燥器
700:搬送裝置
800:控制模組
1000:鍍覆裝置
LL-a:液面隆起的部分
LL-b:液面未隆起的部分
Wf:基板
Wf-a:被鍍覆面
100: Load port
102: Keep Steps
104: Supply Step
106: First descent step
108: Second descent step
110: Transfer robot, third descending step
120: Aligner
200: Pre-wet module
300: Prepreg module
400: Plating module
410: Plating tank
420: Diaphragm
422: Cathode area
424: Anode area
425: Plating solution supply member
426: Nozzle
428: Supply Source
430: Anode
440: Substrate holder
441: Keeping Components
442: Support member
443: Lifting mechanism
443-1: First Lifting Member
443-2: Second Lifting Member
444: Back Panel
445: Sealing member
446: Frame
447: Rotary Mechanism
448: Shaft
449:
圖1係顯示本實施形態之鍍覆裝置的整體構成立體圖。 圖2係顯示本實施形態之鍍覆裝置的整體構成俯視圖。 圖3係概略顯示本實施形態之鍍覆模組構成的縱剖面圖,且顯示未保持基板之狀態。 圖4係概略顯示本實施形態之鍍覆模組構成的縱剖面圖,且顯示保持了基板之狀態。 圖5係概略顯示本實施形態之鍍覆模組的構成之縱剖面圖,且顯示使密封環固持器下降之狀態。 圖6係概略顯示本實施形態之鍍覆模組的構成之縱剖面圖,且顯示使背面板下降而使基板接液之狀態。 圖7係概略顯示本實施形態之鍍覆模組的構成之縱剖面圖,且顯示使背面板下降而抽出空氣之狀態。 圖8係概略顯示本實施形態之鍍覆模組的構成之縱剖面圖,且顯示使背面板下降而密封基板之狀態。 圖9係本實施形態的基板之接液方法的流程圖。 FIG. 1 is a perspective view showing the overall configuration of the coating apparatus of the present embodiment. FIG. 2 is a plan view showing the overall configuration of the coating apparatus of the present embodiment. FIG. 3 is a longitudinal sectional view schematically showing the structure of the plating module of the present embodiment, and shows a state in which the substrate is not held. FIG. 4 is a longitudinal sectional view schematically showing the structure of the plating module of the present embodiment, and shows a state in which the substrate is held. FIG. 5 is a longitudinal sectional view schematically showing the structure of the coating module of the present embodiment, and shows a state in which the seal ring holder is lowered. FIG. 6 is a longitudinal sectional view schematically showing the structure of the plating module of the present embodiment, and shows a state in which the back plate is lowered and the substrate is brought into contact with the liquid. FIG. 7 is a longitudinal cross-sectional view schematically showing the structure of the coating module of the present embodiment, and shows a state in which the rear panel is lowered to extract air. FIG. 8 is a longitudinal sectional view schematically showing the structure of the plating module of the present embodiment, and shows a state in which the back plate is lowered to seal the substrate. FIG. 9 is a flow chart of the method of liquid contacting the substrate according to the present embodiment.
Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW109146940A TWI775262B (en) | 2020-12-30 | 2020-12-30 | Substrate contacting method and plating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW109146940A TWI775262B (en) | 2020-12-30 | 2020-12-30 | Substrate contacting method and plating device |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202229658A true TW202229658A (en) | 2022-08-01 |
TWI775262B TWI775262B (en) | 2022-08-21 |
Family
ID=83782348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109146940A TWI775262B (en) | 2020-12-30 | 2020-12-30 | Substrate contacting method and plating device |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI775262B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116897226A (en) * | 2022-08-09 | 2023-10-17 | 株式会社荏原制作所 | Plating apparatus and plating method |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000014306A1 (en) * | 1998-09-03 | 2000-03-16 | Ebara Corporation | Method for plating substrate and apparatus |
WO2001048800A1 (en) * | 1999-12-24 | 2001-07-05 | Ebara Corporation | Semiconductor wafer processing apparatus and processing method |
US6632335B2 (en) * | 1999-12-24 | 2003-10-14 | Ebara Corporation | Plating apparatus |
US7045040B2 (en) * | 2003-03-20 | 2006-05-16 | Asm Nutool, Inc. | Process and system for eliminating gas bubbles during electrochemical processing |
JP2008208421A (en) * | 2007-02-26 | 2008-09-11 | Ebara Corp | Plating method and plating device |
-
2020
- 2020-12-30 TW TW109146940A patent/TWI775262B/en active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116897226A (en) * | 2022-08-09 | 2023-10-17 | 株式会社荏原制作所 | Plating apparatus and plating method |
CN116897226B (en) * | 2022-08-09 | 2024-03-22 | 株式会社荏原制作所 | Plating apparatus and plating method |
Also Published As
Publication number | Publication date |
---|---|
TWI775262B (en) | 2022-08-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4766579B2 (en) | Electrochemical deposition equipment | |
US20050092600A1 (en) | Substrate holder, plating apparatus, and plating method | |
WO2002020876A2 (en) | Segmenting of processing system into wet and dry areas | |
TWI775262B (en) | Substrate contacting method and plating device | |
CN114616360B (en) | Pre-wetting module and pre-wetting method | |
TW202223166A (en) | Plating method | |
JP6990342B1 (en) | Substrate wetting method and plating equipment | |
US20050173253A1 (en) | Method and apparatus for infilm defect reduction for electrochemical copper deposition | |
TWI759133B (en) | Plating apparatus and plating method | |
KR102404458B1 (en) | Plating apparatus and plating processing method | |
CN108346599B (en) | Method and apparatus for electrochemical treatment of semiconductor substrates and apparatus repair method | |
JP7467782B1 (en) | Plating apparatus and method for discharging plating solution | |
KR102466975B1 (en) | plating device | |
JP2022059325A (en) | Plating unit, and air bubble removing method | |
TWI769848B (en) | Pre-wetting module of coating device and pre-wetting method of coating treatment | |
CN115552060B (en) | Plating device | |
CN116897226B (en) | Plating apparatus and plating method | |
KR102493757B1 (en) | plating device | |
JPH08253891A (en) | Plating method and plating device | |
TWI811834B (en) | Plating device | |
WO2023248416A1 (en) | Pre-wetting module and pre-wetting method | |
WO2023062778A1 (en) | Pre-wet treatment method | |
TW202409358A (en) | Plating device and plating method | |
TW202410278A (en) | Substrate holder, plating device and substrate positioning method | |
TW202321522A (en) | Plating apparatus including a plating bath, a substrate holder and a lifting mechanism |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent |