CN116897226A - Plating apparatus and plating method - Google Patents
Plating apparatus and plating method Download PDFInfo
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- CN116897226A CN116897226A CN202280014805.4A CN202280014805A CN116897226A CN 116897226 A CN116897226 A CN 116897226A CN 202280014805 A CN202280014805 A CN 202280014805A CN 116897226 A CN116897226 A CN 116897226A
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- liquid
- substrate holder
- plating
- substrate
- holding portion
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- 238000007747 plating Methods 0.000 title claims abstract description 348
- 238000000034 method Methods 0.000 title claims abstract description 118
- 239000000758 substrate Substances 0.000 claims abstract description 508
- 239000007788 liquid Substances 0.000 claims abstract description 465
- 230000007246 mechanism Effects 0.000 claims abstract description 109
- 238000007789 sealing Methods 0.000 claims abstract description 40
- 238000003825 pressing Methods 0.000 claims description 34
- 238000007599 discharging Methods 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 10
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000003456 ion exchange resin Substances 0.000 claims description 3
- 229920003303 ion-exchange polymer Polymers 0.000 claims description 3
- 238000007667 floating Methods 0.000 description 76
- 238000012986 modification Methods 0.000 description 73
- 230000004048 modification Effects 0.000 description 73
- 238000004140 cleaning Methods 0.000 description 40
- 238000012546 transfer Methods 0.000 description 35
- 230000000694 effects Effects 0.000 description 31
- 230000002411 adverse Effects 0.000 description 26
- 230000003028 elevating effect Effects 0.000 description 12
- 238000005342 ion exchange Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000009736 wetting Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000007872 degassing Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 hydroxide ions Chemical class 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/10—Agitating of electrolytes; Moving of racks
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
- C25D21/14—Controlled addition of electrolyte components
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Automation & Control Theory (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The plating apparatus includes: a plating tank configured to house a plating solution; a substrate holder configured to hold a substrate to be subjected to a plating process; a rotation mechanism that rotates the substrate holder; a lifting mechanism for lifting the substrate holder; and a control device, wherein the substrate support comprises: a contact member configured to be in contact with the substrate so as to be capable of supplying power; a sealing member configured to seal between the substrate holder and the substrate; a liquid holding portion having the contact member inside and configured to be capable of holding a liquid when the substrate holder and the substrate are sealed by the sealing member; and a discharge port configured to discharge the liquid by being opened to a space inside the liquid holding portion or the substrate holder, the space communicating with the liquid holding portion, or being disposed laterally of the substrate holder.
Description
Technical Field
The present invention relates to a plating apparatus and a plating method.
Background
As a plating apparatus, a cup type or immersion type electrolytic plating apparatus is known. In a cup-type electrolytic plating apparatus, a substrate (e.g., a semiconductor wafer) held by a substrate holder with a surface to be plated facing downward is immersed in a plating solution, and a voltage is applied between the substrate and an anode to deposit a conductive film on the surface of the substrate (see patent documents 1 and 2). In the immersion type electrolytic plating apparatus, a plating process is performed with the surface to be plated facing sideways (see patent document 3).
The substrate holder of such a plating apparatus is provided with a contact member for making contact with a substrate to supply power. The substrate holder is provided with a sealing member that seals so that the plating solution does not contact the contact member during the plating process. In the electrolytic plating device of patent document 3, in order to prevent the plating solution from entering into the sealed space in the work holding jig in which the contact member is housed, the sealed space is filled with a liquid free from metal salts.
Patent document 1: japanese patent No. 7047200
Patent document 2: japanese patent No. 7081063
Patent document 3: japanese patent No. 6893142
If a mixture of components of the plating solution and the like is present in the substrate holder, the deposition of metal components may be caused to damage the contact member, and in addition, the seed layer of the substrate may be dissolved to cause non-uniformity in the thickness of the plating due to power supply variation. It is desirable to perform efficient plating processing and to suppress adverse effects of the mixture inside the substrate holder on contact members and the like.
Disclosure of Invention
The present invention has been made in view of the above-described problems. One of the objects is to provide a plating method and a plating apparatus capable of suppressing adverse effects of a mixed material in a substrate holder on a contact member or the like.
According to one embodiment of the present invention, a plating apparatus is provided. The plating apparatus includes: a plating tank configured to house a plating solution; a substrate holder configured to hold a substrate to be subjected to a plating process; a rotation mechanism that rotates the substrate holder; and a lifting mechanism for lifting the substrate holder; and a control device, wherein the substrate support comprises: a contact member configured to be in contact with the substrate so as to be capable of supplying power; a sealing member configured to seal between the substrate holder and the substrate; a pressing member disposed opposite to the sealing member and configured to press the substrate against the sealing member; a liquid holding portion having the contact member inside and configured to be capable of holding a liquid when the substrate holder and the substrate are sealed by the sealing member; and a discharge port configured to be opened to a space inside the liquid holding portion or the substrate holder, the space communicating with the liquid holding portion, or configured to be disposed on a side of the substrate holder, and to discharge the liquid.
According to another aspect of the present invention, a plating method is provided. The plating method is a plating method for performing the plating treatment by a plating apparatus comprising: a plating tank configured to house a plating solution; a substrate holder configured to hold a substrate to be subjected to a plating process; a rotation mechanism that rotates the substrate holder; and a lifting mechanism for lifting and lowering the substrate holder, wherein the substrate holder comprises: a contact member configured to be in contact with the substrate so as to be capable of supplying power; a sealing member configured to seal between the substrate holder and the substrate; a liquid holding portion having the contact member inside and configured to be capable of holding a liquid when the substrate holder and the substrate are sealed by the sealing member; and an ejection port that is opened in the liquid holding portion or a space of the substrate holder that communicates with the liquid holding portion, or that can be disposed laterally of the substrate holder, the plating method including the steps of: the substrate is mounted on the substrate holder, the liquid is discharged from the discharge port, the substrate holder is rotated to move the discharged liquid to the liquid holding portion or to distribute the liquid more uniformly in the liquid holding portion, and the plating process is performed on the mounted substrate.
Drawings
Fig. 1 is a perspective view showing the overall structure of the plating apparatus according to embodiment 1.
Fig. 2 is a plan view showing the overall structure of the plating apparatus according to embodiment 1.
Fig. 3 is a longitudinal sectional view schematically showing the structure of the plating module of embodiment 1.
Fig. 4 is a longitudinal sectional view schematically showing a substrate holder according to embodiment 1.
Fig. 5 is a longitudinal sectional view schematically showing a substrate holder of the contact member of embodiment 1.
Fig. 6 is a longitudinal sectional view schematically showing a liquid holding portion of the substrate holder.
Fig. 7 is a conceptual diagram showing the configuration of the control module according to embodiment 1.
Fig. 8 is a longitudinal sectional view of a substrate holder for explaining the plating method of embodiment 1.
Fig. 9 is a longitudinal cross-sectional view of a substrate holder for explaining the plating method of embodiment 1.
Fig. 10 is a longitudinal cross-sectional view of a substrate holder for explaining the plating method of embodiment 1.
Fig. 11 is a longitudinal cross-sectional view of a substrate holder for explaining the plating method of embodiment 1.
Fig. 12 is a longitudinal cross-sectional view of a substrate holder for explaining the plating method of embodiment 1.
Fig. 13 is a longitudinal cross-sectional view of a substrate holder for explaining the plating method of embodiment 1.
Fig. 14 is an enlarged cross-sectional view schematically showing the liquid holding portion.
Fig. 15 is a flowchart showing a flow of the plating method of embodiment 1.
Fig. 16 is a plan view schematically showing a floating plate according to modification 1-1.
Fig. 17 is a plan view schematically showing a floating plate according to modification 1-2.
Fig. 18 is a longitudinal sectional view for explaining the plating method of modification examples 1 to 3.
Fig. 19 is a flowchart showing the flow of the plating method of modification examples 1 to 3.
Fig. 20 is a longitudinal sectional view schematically showing the plating modules of modification examples 1 to 4.
Fig. 21 is a plan view schematically showing the floating plate of modification examples 1 to 4.
Fig. 22 is a longitudinal sectional view of a substrate holder for explaining the plating method of modification examples 1 to 4.
Fig. 23 is a longitudinal sectional view of a substrate holder for explaining the plating method of modification examples 1 to 4.
Fig. 24 is a longitudinal sectional view of a substrate holder for explaining the plating method of modification examples 1 to 4.
Fig. 25 is a longitudinal sectional view schematically showing the plating module of modification examples 1 to 5.
Fig. 26 is a flowchart showing the flow of the plating method of modification examples 1 to 5.
Fig. 27 is a longitudinal sectional view schematically showing the substrate holders of modification examples 1 to 6.
Fig. 28 is a longitudinal sectional view of a substrate holder for explaining the plating method of modification examples 1 to 6.
Fig. 29 is a flowchart showing the flow of the plating method of modification examples 1 to 6.
Fig. 30 is a longitudinal sectional view schematically showing the plating apparatus of embodiment 2.
Fig. 31 is a flowchart showing a flow of the plating method according to embodiment 2.
Fig. 32 is a flowchart showing the flow of the plating method of modification 2-1.
Fig. 33 is a flowchart showing the flow of the plating method of modification 2-2.
Fig. 34 is a longitudinal sectional view of a plating module for explaining the plating method of modification 2-3.
Fig. 35 is a longitudinal sectional view schematically showing the substrate holder of modification 2 to 4.
Fig. 36 is a longitudinal sectional view schematically showing a substrate holder of modification 2 to 5.
Fig. 37 is a longitudinal sectional view schematically showing the plating module of modification examples 2 to 6.
Fig. 38 is a conceptual diagram showing the contact members of modification examples 2 to 6.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding components are denoted by the same reference numerals, and repetitive description thereof will be omitted.
Embodiment 1
Integral structure of plating device
Fig. 1 is a perspective view showing the overall structure of a plating apparatus 1000 according to embodiment 1. Fig. 2 is a plan view showing the overall structure of the plating apparatus 1000. As shown in fig. 1 and 2, the plating apparatus 1000 includes: load port 100, transfer robot 110, aligner 120, pre-wetting module 200, pre-dipping module 300, plating module 400, cleaning module 500, spin dryer 600, transfer apparatus 700, and control module 800.
The load port 100 is a module for carrying substrates stored in a cassette such as a FOUP, not shown, into the plating apparatus 1000 or carrying substrates from the plating apparatus 1000 to the cassette. In the present embodiment, the 4 load ports 100 are arranged in a horizontal direction, but the number and arrangement of the load ports 100 are arbitrary. The transfer robot 110 is a robot for transferring substrates, and is configured to transfer substrates between the load port 100, the aligner 120, and the transfer apparatus 700. When the substrate is transferred between the transfer robot 110 and the transfer device 700, the transfer robot 110 and the transfer device 700 can transfer the substrate via a temporary stage, not shown.
The aligner 120 is a module for aligning the position of an orientation flat, a notch, or the like of the substrate with a prescribed direction. In the present embodiment, the 2 aligners 120 are arranged in the horizontal direction, but the number and arrangement of aligners 120 are arbitrary. The pre-wetting module 200 wets the surface to be plated of the substrate before the plating process with a treatment liquid (pre-wetting liquid) such as pure water or deaerated water, thereby replacing air inside the pattern formed on the substrate surface with the treatment liquid. The prewetting module 200 is configured to perform a prewetting process in which the plating solution is easily supplied into the pattern by replacing the processing solution in the pattern with the plating solution during plating. In the present embodiment, 2 prewetting modules 200 are arranged in the vertical direction, but the number and arrangement of prewetting modules 200 are arbitrary.
The prepreg module 300 is configured to perform a prepreg treatment for cleaning or activating the surface of the plating base by removing an oxide film having a relatively large electrical resistance existing on the seed layer surface or the like formed on the surface to be plated of the substrate before the plating treatment by etching with a treatment liquid such as sulfuric acid or hydrochloric acid. In the present embodiment, 2 prepreg modules 300 are arranged in the vertical direction, but the number and arrangement of prepreg modules 300 are arbitrary. The prepreg may be omitted, and the plating apparatus 1000 may not be provided with a prepreg module. The plating module 400 performs a plating process on a substrate. In the present embodiment, there are 2 groups of 3 plating modules 400 arranged in the vertical direction and 4 plating modules 400 arranged in the horizontal direction, and a total of 24 plating modules 400 are provided, but the number and arrangement of the plating modules 400 are arbitrary.
The cleaning module 500 is configured to perform a cleaning process on the substrate in order to remove plating solution or the like remaining on the substrate after the plating process. In the present embodiment, 2 cleaning modules 500 are arranged in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary. The spin dryer 600 is a module for drying a substrate after a cleaning process by rotating the substrate at a high speed. In the present embodiment, 2 spin driers are arranged in the vertical direction, but the number and arrangement of spin driers are arbitrary. The transport device 700 is a device for transporting substrates between a plurality of modules in the plating device 1000. The control module 800 is configured to control a plurality of modules of the plating apparatus 1000, and may be configured by a general-purpose computer or a special-purpose computer having an input/output interface with an operator, for example.
An example of a series of plating processes performed by the plating apparatus 1000 will be described. First, substrates stored in cassettes are carried into the load port 100. Next, the transfer robot 110 takes out the substrates from the cassettes of the load port 100 and transfers the substrates to the aligner 120. The aligner 120 aligns the position of the orientation flat or notch of the substrate with a prescribed direction. The transfer robot 110 transfers the substrate aligned in the direction by the aligner 120 to the transfer apparatus 700.
The transfer device 700 transfers the substrate received from the transfer robot 110 to the prewetting module 200. The pre-wetting module 200 performs a pre-wetting process on the substrate. The transfer device 700 transfers the substrate subjected to the pre-wetting treatment to the prepreg module 300. The prepreg module 300 performs prepreg treatment on the substrate. The transfer device 700 transfers the prepreg-treated substrate to the plating module 400. The plating module 400 performs a plating process on a substrate.
The transfer device 700 transfers the substrate subjected to the plating process to the cleaning module 500. The cleaning module 500 performs a cleaning process on the substrate. The transfer device 700 transfers the substrate subjected to the cleaning process to the spin dryer 600. The spin dryer 600 performs a drying process on a substrate. The transfer device 700 transfers the substrate subjected to the drying process to the transfer robot 110. The transfer robot 110 transfers the substrates received from the transfer device 700 to the cassettes of the load port 100. Finally, the cassette housing the substrates is carried out from the load port 100.
Structure of plating Module
Next, the structure of the plating module 400 will be described. Since 24 plating modules 400 in the present embodiment have the same structure, only 1 plating module 400 will be described. Fig. 3 is a longitudinal sectional view schematically showing the structure of the plating module 400 according to the present embodiment. As shown in fig. 3, the plating module 400 includes a plating tank 410 for containing a plating solution. The plating tank 410 is a container having a cylindrical side wall and a circular bottom wall, and a circular opening is formed in the upper portion. In addition, the plating module 400 includes an overflow tank 405 disposed outside the upper opening of the plating tank 410. Overflow trough 405 is a receptacle for receiving plating solution that overflows from the upper opening of plating trough 410.
The plating module 400 includes a diaphragm 420 that vertically partitions the inside of the plating tank 410. The interior of the plating tank 410 is separated by a membrane 420 into a cathode region 422 and an anode region 424. The cathode region 422 and the anode region 424 are filled with a plating solution, respectively. An anode 430 is provided at the bottom of the plating tank 410 in the anode region 424. A resistor 450 is disposed in the cathode region 422 so as to face the separator 420. The resistor 450 is a member for realizing uniformity of plating treatment on the surface Wf-a to be plated of the substrate Wf, and is formed of a plate-like member having a plurality of holes formed therein. The resistor 450 may not be disposed in the plating tank 410 as long as the plating process can be performed with a desired accuracy.
The plating solution is not particularly limited as long as it is a solution containing ions of the metal element constituting the plating film. As an example of the plating treatment, a copper plating treatment can be used, and as an example of the plating solution, a copper sulfate solution can be used. In the present embodiment, a predetermined additive is contained in the plating solution. However, the plating solution is not limited to this configuration, and may be configured to contain no additive.
The specific type of the anode 430 is not particularly limited, and a dissolved anode or an insoluble anode can be used. In the present embodiment, an insoluble anode is used as the anode 430. The specific type of the insoluble anode is not particularly limited, and platinum, iridium oxide, or the like can be used.
The plating module 400 further includes a substrate holder 440 for holding the substrate Wf with the surface Wf-a to be plated facing downward. The plating module 400 includes a 1 st elevating mechanism 442 for elevating the substrate holder 440. The 1 st elevating mechanism 442 can be realized by a known mechanism such as a linear actuator. The plating module 400 further includes a rotation mechanism 446 for rotating the substrate holder 440 so that the substrate Wf rotates around a virtual rotation axis extending vertically at the center of the plating surface Wf-a. The rotation mechanism 446 can be realized by a known mechanism such as a motor.
The plating module 400 is configured to apply a voltage between the anode 430 and the substrate Wf while immersing the substrate Wf in a plating solution in the cathode region 422 by using the 1 st elevating mechanism 442 and rotating the substrate Wf by using the rotating mechanism 446, thereby performing a plating process on the surface Wf-a to be plated of the substrate Wf.
Fig. 4 is a longitudinal sectional view schematically showing the substrate holder 440. The substrate holder 440 includes: a support portion 490 for supporting the substrate Wf; a back plate assembly 492 for sandwiching the substrate Wf together with the support portion 490; and a rotation shaft 491 extending vertically upward from the back plate assembly 492. The support portion 490 includes a 1 st upper member 493, a 2 nd upper member 496, and a support mechanism 494 for supporting an outer peripheral portion of the surface Wf-a to be plated of the substrate Wf. Upper member 493, 1 st, holds upper member 496, 2 nd. In the illustrated example, the 1 st upper member 493 extends in a substantially horizontal direction, and the 2 nd upper member 496 extends in a substantially vertical direction, but the present invention is not limited to the above. The support mechanism 494 is an annular member having an opening in the center for exposing the surface Wf-a to be plated of the substrate Wf, and is suspended and held by the 2 nd upper member 496. The 2 nd upper member 496 may be provided with 1 or more column members on the annular upper surface of the support mechanism 494.
The back plate assembly 492 includes a disk-shaped floating plate 492-2 for sandwiching the substrate Wf together with the supporting mechanism 494. The floating plate 492-2 is disposed on the back surface side of the plated surface Wf-a of the substrate Wf. The back plate assembly 492 further includes a disk-shaped back plate 492-1 disposed above the floating plate 492-2. In addition, the back plate assembly 492 is provided with: a floating mechanism 492-4 for biasing the floating plate 492-2 in a direction separating from the back surface of the substrate Wf; and a pressing mechanism 492-3 for pressing the floating plate 492-2 against the back surface of the substrate Wf in a manner to overcome the force generated by the floating mechanism 492-4.
The floating mechanism 492-4 includes a compression spring mounted between the upper end of a shaft extending upward from the floating plate 492-2 through the back plate 492-1 and the back plate 492-1. The floating mechanism 492-4 is configured to lift the floating plate 492-2 upward via the shaft by the compression reaction force of the compression spring, and to apply a force in a direction separating from the rear surface of the substrate Wf. The floating mechanism 492-4 is appropriately omitted from the following drawings.
The pressing mechanism 492-3 is configured to supply a fluid to the floating plate 492-2 through a flow path, not shown, formed inside the back plate 492-1, thereby pressing the floating plate 492-2 downward. When the fluid is supplied to the pressing mechanism 492-3, the substrate Wf is pressed against the supporting mechanism 494 by a force stronger than the force generated by the floating mechanism 492-4. The floating plate 492-2 is disposed opposite to a sealing member 494-2 (fig. 5) described later, and is configured as a pressing member for pressing the substrate Wf against the sealing member 494-2.
The 1 st elevating mechanism 442 elevates and lowers the entire substrate holder 440 (arrow a 10). The plating module 400 further includes a2 nd elevating mechanism 443. The 2 nd elevating mechanism 443 is driven by a known mechanism such as a linear actuator, and the rotation shaft 491 and the back plate assembly 492 are moved up and down relative to the support portion 490 (arrow a 20). The rotation shaft 491 is formed with a discharge port 60 for discharging liquid and a supply flow path 50 connected to the discharge port 60 so as to be movable with the liquid. The ejection port 60 will be described in detail later.
Fig. 5 is a longitudinal sectional view schematically showing a part of the structure of the enlarged substrate holder 440. The support mechanism 494 includes an annular support member 494-1 for supporting the outer peripheral portion of the surface Wf-a to be plated of the substrate Wf. The support member 494-1 has a flange 494-1a protruding toward the outer periphery of the lower surface of the back plate assembly 492 (floating plate 492-2). An annular seal member 494-2 configured to seal the substrate Wf is disposed on the flange 494-1a. The seal member 494-2 is a member having elasticity. The supporting member 494-1 supports the outer peripheral portion of the plated surface Wf-a of the substrate Wf via the sealing member 494-2. In the plating process of the substrate Wf, the substrate Wf is sandwiched between the seal member 494-2 and the floating plate 492-2, and thus the gap between the support member 494-1 (substrate holder 440) and the substrate Wf is sealed.
The support mechanism 494 includes an annular base 494-3 attached to an inner peripheral surface of the support member 494-1, and an annular conductive member 494-5 attached to an upper surface of the base 494-3. The pedestal 494-3 is a member having conductivity, such as stainless steel. The conductive member 494-5 is a ring-shaped member having conductivity, and can include copper or other metal, for example.
The support mechanism 494 includes a contact member 494-4 configured to be in contact with the substrate Wf in a power-supplying manner. The contact member 494-4 is mounted to the inner peripheral surface of the pedestal 494-3 in a ring-like manner by screws or the like. The support member 494-1 maintains the contact member 494-4 via the pedestal 494-3. The contact member 494-4 is a conductive member for supplying power from a power source, not shown, to the substrate Wf held by the substrate holder 440. The contact member 494-4 has a plurality of substrate contacts 494-4a which contact the outer peripheral portion of the plated surface Wf-a of the substrate Wf, and a main body portion 494-4b which extends above the substrate contacts 494-4 a.
The substrate holder 440 includes a liquid holding portion 494L, and the liquid holding portion 494L is configured to be capable of holding liquid inside the substrate holder 440 when the substrate Wf is sealed by the sealing member 494-2. The liquid holding portion 494L is provided with a contact member 494-4 inside thereof. The liquid holding portion 494L may be configured to include a plurality of side walls facing each other with the contact member 494-4 interposed therebetween and a bottom wall below the contact member 494-4. In the illustrated example, the liquid retaining portion 494L is configured to include an outer surface of the disk-shaped floating plate 492-2 and inner and bottom surfaces of the support member 494-1. Thus, when the substrate holder 440 and the substrate Wf are sealed by the seal member 494-2, the contact member 494-4 can be efficiently covered with a small amount of liquid. Here, the outer surface of the floating plate 492-2 is located above the seal member 494-2 and extends in a substantially vertical direction. The bottom surface of the support member 494-1 is a surface formed above the flange 494-1a protruding radially inward of the substrate holder 440 and extending along the flange 494-1 a.
When the substrate Wf is not mounted on the substrate holder 440, the liquid can flow down through the gap between the floating plate 492-2 and the sealing member 494-2. If the substrate Wf sandwiched between the floating plate 492-2 and the sealing member 494-2 is sealed, the liquid holding portion 494L can hold liquid and prevent such liquid from flowing down. Further, a recess may be formed in the bottom wall constituting the liquid holding portion 494L, so that a small amount of liquid may be held in the liquid holding portion 494L even when the substrate Wf is not mounted on the substrate holder 440.
Fig. 6 is a conceptual diagram for explaining a space inside the substrate holder 440. A discharge port 60 for discharging the liquid L1 is formed in the substrate holder 440. The ejection port 60 opens in a space communicating with the liquid holding portion 494L inside the liquid holding portion 494L or the substrate holder 440. In the illustrated example, the discharge port 60 is formed above the floating plate 492-2 and opens into the inner space S1 above the floating plate 492-2. In the illustrated example, the discharge port 60 is formed in the rotation shaft 491, but the present invention is not limited thereto. The spouting port 60 may be formed in the back plate 492-1 at a position above the floating plate 492-2, for example. The liquid L1 can be discharged from the discharge port 60 by controlling a valve, a pump, or the like, not shown, provided in the supply channel 50 by the control module 800.
The substrate holder 440 is configured such that the liquid L1 discharged from the discharge port 60 is supplied to the liquid holding portion 494L. The liquid L1 supplied to the liquid holding portion 494L covers at least a portion of the contact member 494-4. The composition of the liquid L1 is not particularly limited as long as it has the effect of protecting the contact member 494-4. The liquid L1 preferably has a conductivity less than or equal to a predetermined threshold, a conductivity less than the predetermined threshold, or is subjected to a degassing treatment.
The conductivity of the liquid L1 is preferably 50. Mu.S/cm or less, more preferably 10. Mu.S/cm or less. If a liquid having high conductivity exists around the contact member 494-4 and the substrate Wf, the metal component may be deposited and may cause damage. In addition, in addition to the current passing through the contact portion of the contact part 494-4 with the substrate Wf, the shunt current may not pass through the contact portion but flow between the seed layer of the substrate Wf and the contact part 494-4 through the liquid. At this time, the seed layer may be thinned due to ionization and dissolution of copper in the seed layer. If the seed layer becomes thin, the resistance increases, and power supply deviation may occur. If the conductivity of the liquid L1 is low, such adverse effects can be suppressed. For details about the shunt current, refer to patent document 2.
If an oxygen-containing liquid is present around the contact member 494-4 and the substrate Wf, oxygen is ionized, and thus a local cell effect in which the seed layer is dissolved in the liquid may be caused. For example, copper of the seed layer gives electrons to dissolved oxygen, hydroxide ions are generated from the dissolved oxygen, and copper becomes copper ions to be dissolved out. Due to the local battery effect, the seed layer becomes thin and the resistance increases, so that a power supply deviation may occur. If the liquid L1 is subjected to the degassing treatment, such adverse effects can be suppressed. For details of the local battery effect, refer to patent document 2.
From the above viewpoints, the liquid L1 is preferably pure water, ion-exchanged water, or deaerated water.
In the present embodiment, the liquid L can be held in the liquid holding portion 494L when the substrate holder 440 and the substrate Wf are sealed. Since the liquid holding portion 494L can hold more liquid L1 than in the vicinity of the contact member in patent document 2, the mixture of the plating liquid and the like in the vicinity of the contact member 494-4 is diluted to a lower concentration. This can suppress the above-described adverse effects due to the mixed matter.
Fig. 7 is a conceptual diagram for explaining the control module 800. The control module 800 functions as a control device that controls the operation of the plating module 400. The control module 800 includes a microcomputer or other computer including a CPU (Central Processing Unit: central processing unit) 801 as a processor, a memory 802 as a temporary or non-temporary storage medium, and the like. The control module 800 controls the controlled portion of the plating module 400 by the operation of the CPU 801. The CPU801 can execute various processes by executing a program stored in the memory 802 or by reading and executing a program stored in a storage medium not shown into the memory 802. The programs include, for example, a program for executing a transfer robot, transfer control of a transfer device, control of processes in each process module, control of plating processes in the plating module 400, control of processes on the liquid L1, and a program for detecting abnormality of various devices. As the storage medium, for example, a memory such as ROM, RAM, flash memory, etc. readable by a computer, a disk-like storage medium such as a hard disk, CD-ROM, DVD-ROM, or floppy disk, or a known storage medium such as a solid-state drive can be used. The control module 800 is configured to be capable of communicating with a not-shown upper controller that uniformly controls the plating apparatus 1000 and other related apparatuses, and to exchange data with a database provided in the upper controller. Some or all of the functions of the control module 800 can be constituted by hardware such as an ASIC. Some or all of the functions of the control module 800 may be constituted by a PLC, a sequence controller, or the like. A portion or all of the control module 800 can be disposed inside and/or outside of the housing of the plating apparatus 1000. Part or all of the control module 800 can be communicatively coupled to various portions of the plating apparatus 1000 by wires and/or wirelessly.
Fig. 8 to 13 are longitudinal sectional views sequentially showing the state of the substrate holder 440 in time series for explaining the plating method of the present embodiment. The plating method is performed by control of the control module 800.
Fig. 8 and 9 schematically show a step of mounting the substrate Wf on the substrate holder 440. Fig. 8 is a diagram showing a state in which the substrate Wf is disposed on the support member 494. In the illustrated example, the backplate assembly 492 including the floating plate 492-2 is raised by the 2 nd lift mechanism 443. Thus, the substrate Wf is disposed on the support member 494 in a state where the gap between the support member 494 and the floating plate 492-2 is widened.
Fig. 9 is a view showing a state where the substrate Wf is sealed. The back plate assembly 492 is lowered by the 2 nd elevator mechanism 443. The floating plate 492-2 presses the substrate Wf against the supporting member 494 to seal the substrate holder 440 from the substrate Wf.
Fig. 10 schematically shows a step of ejecting the liquid L1. The liquid L1 discharged from the discharge port 60 above the floating plate 492-2 is disposed on the back surface BS of the floating plate 492-2. The back surface BS is a surface of the floating plate 492-2 opposite to the side on which the substrate Wf is disposed. In this way, the control module 800 is configured to discharge the liquid L1 to the liquid holding portion 494L or the space communicating with the liquid holding portion 494L through the discharge port 60 when the substrate Wf is sealed by the sealing member 494-2. Thus, the liquid L1 can be stored in the liquid holding portion 494L that can hold the state of the liquid L1, and the concentration of the mixed matter can be reduced, so that adverse effects of the mixed matter on the contact member 494-4 and the like can be suppressed. Further, since the liquid L1 is supplied to the contact member 494-4 after the substrate Wf is mounted, the above-described adverse effects can be effectively suppressed with respect to the mixing of the plating liquid at the time of mounting the substrate Wf and the mixing of the plating liquid due to the leakage of the seal member 494-2. In the illustrated example, the discharge port 60 is formed above the floating plate 492-2, whereby the supply flow path 50 to the discharge port 60 can be shortened and simplified. Further, by forming the liquid L1 to be discharged toward the rear surface BS, the liquid L1 can be supplied to the contact member 494-4 by the rotating mechanism 446.
Fig. 11 and 12 schematically show a step of rotating the substrate holder 440. The rotation mechanism 446 rotates the substrate holder 440 about an axis intersecting the surface Wf-a to be coated (arrow a 30). As shown in fig. 11, the liquid L1 on the back surface BS of the floating plate 492-2 moves radially outward by the centrifugal force of the rotation (arrow a 40). The liquid L1 moves toward the liquid retaining portion 494L formed outside the floating plate 492-2. Fig. 12 is a diagram showing that the liquid L1 reaches the liquid holding portion 494L by the movement during rotation and is held by the liquid holding portion 494L. In addition, by this rotation, the liquid L1 can be more uniformly distributed in the liquid holding portion 494L.
Fig. 13 is a diagram schematically showing a step of immersing the substrate holder 440 in a plating solution to perform a plating process. The 1 st elevating mechanism 442 lowers the substrate holder 440 toward the plating bath 410, and at least the substrate Wf is immersed in the plating solution. While immersing the substrate Wf in the plating solution, a voltage is applied between the substrate Wf and the anode 430 to perform a plating process. During the dipping and plating process of the substrate holder 440, the liquid L is still held in the liquid holding portion 494L. When the substrate holder 440 is immersed in the plating solution and the plating treatment is performed, the rotation of the substrate holder 440 may be stopped, but from the viewpoint of making the thickness of the formed plating uniform, the rotation at a predetermined rotation speed is preferable.
Fig. 14 is an enlarged cross-sectional view schematically showing the substrate holder 440 of the liquid holding portion 494L that holds the liquid L1. The height HL1 of the liquid level of the liquid L1 in the liquid holding portion 494L is preferably between the height H1 of the plated surface Wf-a of the substrate Wf and the height H2 of the back surface BS of the floating plate 492-2. If the height HL1 of the liquid surface of the liquid L1 is lower than the height H1, the contact member 494-4 may not be sufficiently covered, and a negative effect due to the contamination may occur. Further, since the distance between the surface of the liquid L1 and the surface Wf-a to be plated is short, oxidation of the seed layer due to oxygen dissolved from the surface is likely to occur. If the height HL1 of the liquid surface of the liquid L1 is higher than the height H2, there is a concern that a large amount of the liquid L1 flows down and the plating liquid is thinned when the substrate Wf is removed from the substrate holder 440, in addition to the inefficiency of the rotation due to the mass of the liquid L1. The control module 800 is preferably configured to discharge a predetermined amount of the liquid L1. The amount is preferably set to a height at which the liquid level of the liquid L1 is located between the plated surface Wf-a, which is the lower surface of the substrate Wf, and the back surface BS, which is the upper surface of the floating plate 492-2, in the liquid holding portion 494L.
Fig. 15 is a flowchart showing a flow of the plating method according to the present embodiment. In step S101, the substrate Wf is mounted to the substrate holder 440. After step S101, step S102 is performed. In step S102, the liquid L1 is discharged onto the back surface BS of the floating plate 492-2 as the pressing member. After step S102, step S103 is performed. In step S103, the substrate holder 440 is rotated. After step S103, step S104 is performed. In step S104, the substrate holder 440 is immersed in a plating solution. After step S104, step S105 is performed. In step S105, a plating process is performed on the substrate Wf. After step S105, the substrate Wf is removed from the substrate holder 440 and transferred to the cleaning module 500.
The plating apparatus 1000 of the present embodiment includes a substrate holder 440 and a rotation mechanism 446, and the substrate holder 440 includes: a liquid holding portion 494L, the liquid holding portion 494L having a contact member 494-4 inside and configured to be capable of holding the liquid L1 when the substrate holder 440 and the substrate Wf are sealed by the sealing member 494-2; and a discharge port 60, wherein the discharge port 60 discharges the liquid L1 through a space opening communicating with the liquid holding portion 494L in the liquid holding portion 494L or the substrate holder 440. Thus, the plating apparatus 1000 can be provided, which can suppress adverse effects on the contact members 494-4 and the like due to the mixed matter inside the substrate holder 440. In addition, the amount of the liquid L1 in the substrate holder 440 can be adjusted to efficiently perform the plating process. In addition, as compared with the case where the liquid is ejected from the outside of the substrate holder to the contact member, the possibility that the liquid L1 flows down and the plating liquid becomes thin when the liquid L1 is supplied to the contact member 494-4 can be reduced.
The plating method according to the present embodiment is a plating method performed by the plating apparatus 1000, and includes the steps of: mounting the substrate Wf to a substrate holder 440; ejecting the liquid L1 from the ejection port 60; rotating the substrate holder 440 to move the ejected liquid L1 toward the liquid holding portion 494L or to more uniformly distribute the liquid L1 in the liquid holding portion 494L; and performing a plating process on the mounted substrate Wf. This can more reliably suppress adverse effects of the contact member 494-4 and the like due to the contamination inside the substrate holder 440.
The following modifications are also within the scope of the present invention, and can be combined with the above-described embodiment or other modifications. In the following modification examples, parts and the like showing the same structures and functions as those of the above-described embodiments are referred to by the same reference numerals, and descriptions thereof are omitted appropriately.
Modification 1-1
In the above embodiment, the concave portion may be formed on the back surface of the floating plate as the pressing member.
Fig. 16 is a transverse cross-sectional view of the back plate assembly 492 schematically showing the back surface BS of the floating plate 492-2A of the present modification. In the illustrated example, 10 columnar pressing mechanisms 492-3 are arranged rotationally symmetrically on the back surface BS, but the shape, number, and position of the pressing mechanisms 492-3 are not particularly limited.
A recess 40A is formed in a central portion of the back surface BS of the floating plate 492-2A so as to surround the central axis Ax1 of the floating plate 492-2A. The center axis Ax1 is preferably configured to substantially coincide with the rotation axis of the substrate holder 440. The liquid L1 flowing down from the discharge port 60 is temporarily held in the concave portion 40A. The recess 40A holds the liquid L1 in the central portion until the rotation by the rotation mechanism 446 (step S103 described above), thereby suppressing the variation in the amount of the liquid L1 moving in each direction at the time of rotation. Thus, the liquid L1 is more uniformly distributed in the liquid holding portion 494L.
Modification 1-2
In modification 1-1, a radial concave portion may be formed on the back surface of the floating plate.
Fig. 17 is a transverse cross-sectional view of the back plate assembly 492 schematically showing the back surface BS of the floating plate 492-2B of the present modification. On the back surface BS of the floating plate 492-2B, a radially extending concave portion 40B is formed in addition to the concave portion 40A. The liquid L1 discharged from the discharge port 60 easily passes through the concave portion 40B and moves radially. As a result, when the rotation mechanism 446 rotates in step S103, the variation in the amount of the liquid L1 moving in each direction can be more reliably suppressed.
In the plating apparatus of the present modification, recesses 40A and 40B for flowing or holding the liquid L1 are formed in the back surface BS of the floating plate 492-2B. This can suppress the variation in the amount of the liquid L1 moving in each direction, and can more uniformly distribute the liquid L1 to the liquid holding portion 494L. In addition, the liquid L1 can be smoothly moved to the liquid holding portion 494L, and the processing efficiency can be improved. The recess 40B may be formed on the back surface BS instead of the recess 40A.
Modification 1-3
In the above embodiment, the liquid L1 may be moved to the liquid holding portion 494L by tilting the substrate holder.
Fig. 18 is a longitudinal sectional view schematically showing a plating module 400A for explaining a plating method of the present modification. The plating module 400A has substantially the same structure as the plating module 400 described above, but differs in that the inclination mechanism 447 is provided. The tilting mechanism 447 is configured to tilt the substrate holder 440, and can be realized by a known mechanism such as a tilting mechanism, for example. Here, the inclination of the substrate holder 440 refers to an inclination of the substrate Wf that can be disposed on the substrate holder 440, and is represented by an angle of the lower surface of the floating plate 492-2 with respect to the horizontal, for example.
After the liquid L1 is discharged from the discharge port 60 toward the floating plate 492-2, the control module 800 controls the rotation mechanism 446 and the tilting mechanism 447 to rotate the substrate holder 440 and tilt the substrate holder 440 so that the back surface BS of the floating plate 492-2 is tilted from the horizontal. By gravity, the liquid L1 easily moves to the liquid holding portion 494L located on the inclined lower side. Thus, even in a case where the liquid L1 is difficult to move by rotation, the liquid L1 can be supplied to the contact member 494-4 more reliably. From the viewpoint of more uniformly distributing the liquid L1 in the liquid holding portion 494L, the tilting mechanism 447 preferably tilts the substrate holder 440 in a plurality of different directions.
In addition, as shown in the illustrated example, when the substrate holder 440 on which the substrate Wf is mounted is immersed in the plating liquid, the bubbles rise toward the liquid surface by tilting by the tilting mechanism 447, and therefore, the bubbles are less likely to remain on the surface Wf-a to be plated. Thus, the electric field disturbance due to the bubbles can be prevented, and the uniformity of the thickness of the formed plating can be reduced. In other words, the control module 800 can move the liquid L1 toward the liquid holding portion 494L when the substrate holder 440 is tilted so that the bubbles do not enter the plated surface Wf-a.
Fig. 19 is a flowchart showing a flow of the plating method according to this modification. The plating process is performed by the control module 800. Steps S201, S202, and S205 are the same as steps S101, S102, and S105 of the flowchart of fig. 15, and therefore, the description thereof is omitted. After step S202, step S203 is performed. In step S203, the substrate holder 440 is immersed in the plating solution while the substrate holder 440 is tilted and rotated by the tilting mechanism 447 and the rotating mechanism 446, respectively. After step S203, step S204 is performed. In step S204, the tilting mechanism 447 brings the substrate holder 440 into a state of being positioned in the horizontal position. Here, the horizontal position refers to a direction of the substrate holder 440 substantially horizontally to such an extent that the plated surface Wf-a can uniformly form plating to a desired extent. After step S204, step S205 is performed.
Modification 1-4
In the above embodiment, the liquid may be discharged from the outside of the substrate holder and placed on the back surface of the floating plate.
Fig. 20 is a longitudinal sectional view schematically showing a plating module 400B according to this modification. The plating module 400B has substantially the same configuration as the plating module 400 of the above embodiment, but is different from the plating module 400 in that the plating module is provided with a substrate holder 440A in place of the substrate holder 440 and further provided with a liquid supply device 600. The substrate holder 440A has substantially the same structure as the substrate holder 440, but is different from the substrate holder 440 in that the floating plate 492-2C is provided instead of the floating plate 492-2, and the supply channel 50 and the discharge port 60 are not formed.
The liquid supply device 600 is configured to supply the liquid L1 to the floating plate 492-2C. The liquid supply device 600 includes a nozzle 610, and the nozzle 610 is formed with a discharge port 61 for discharging the liquid L1. The nozzle 610 is configured to be capable of ejecting the liquid L1 from the outside of the substrate holder 440A toward the recess 40C described later after the back plate 492-1 is lifted. In the illustrated example, the liquid L1 discharged from the nozzle 610 passes between the 1 st upper member 493 and the plurality of columnar 2 nd upper members 496 arranged on the outer periphery of the support member 494, and is injected into the substrate holder 440A. The ejection port 61 is preferably disposed laterally of the substrate holder 440A. In other words, the ejection port 61 is preferably disposed on the side of the substrate holder 440A or movable to the side of the substrate holder 440A. In addition, from the viewpoint of facilitating the liquid L1 to reach the concave portion 40C, the discharge port 61 is preferably disposed laterally of the substrate holder 440A and above the bottom surface S100 of the substrate holder 440A, and more preferably above the highest reaching position of the back surface BS of the floating plate 492-2C. In this way, the liquid supply device 600 is formed with the discharge port 61 for discharging the liquid L1 toward the recess 40C.
Fig. 21 is a plan view schematically showing the back surface BS of the floating plate 492-2C of the present modification. The floating plate 492-2C has substantially the same structure as the floating plate 492-2A of the modification described above, but differs in that the recess 40C is formed instead of the recess 40A. The recess 40C is formed in the outer peripheral portion of the floating plate 40C. Thereby, the liquid L1 is easily introduced from the outside of the substrate holder 440A to the recess 40C.
Fig. 22 to 24 are longitudinal sectional views sequentially showing the state of the substrate holder 440A in time series for explaining the plating method of the present modification. The plating method is performed by control of the control module 800.
Fig. 22 schematically shows a step of disposing the liquid L1 in the substrate holder 440A. When the 2 nd elevating mechanism 443 moves the back plate assembly 492 away from the seal member 494-2, the liquid L1 is discharged from the discharge port 61 of the nozzle 610 toward the recess 40C. At this time, the substrate holder 440A is preferably rotated by the rotation mechanism 446 so that the liquid L1 is distributed as much as possible over the entire circumference. Alternatively, the liquid supply device 600 may be moved to discharge the liquid L1 toward different positions of the concave portion 40C.
Fig. 23 schematically shows a step of mounting the substrate Wf on the substrate holder 440A provided with the liquid L1. The substrate Wf is disposed on the support member 494 and the 2 nd elevator 443 lowers the back plate assembly 492 to seal the substrate holder 440A from the substrate Wf. The liquid L1 is kept in a state of being disposed in the recess 40C of the floating plate 492-2C.
Fig. 24 schematically illustrates a step of moving the liquid L1 existing in the concave portion 40C toward the liquid holding portion 494L. When the substrate holder 440A is rotated by the rotation mechanism 446, the liquid L1 is moved radially outward from the concave portion 40C arranged on the outer peripheral portion of the floating plate 492-2C by centrifugal force, and is held by the liquid holding portion 494L.
In the plating apparatus and the plating method according to the present modification, the discharge port 61 for discharging the liquid L1 is disposed outside the substrate holder 440A, and the control module 800 is configured to discharge the liquid L1 from the discharge port 61 outside the substrate holder 440A toward the floating plate 492-2C. Thus, the liquid L1 can be supplied to the inside of the substrate holder 440A with a simpler structure without providing a supply channel for ejecting the liquid L1 to the substrate holder 440A.
Modification 1-5
In the above embodiment, the inside of the substrate holder may be cleaned by the liquid L1 discharged into the inside of the substrate holder.
Fig. 25 is a conceptual diagram illustrating a plating module 400C according to this modification. The plating module 400C has the same structure as the plating module 400A of the modification example described above, but differs from the plating module 400A in that the cleaning device 470 is provided. The cleaning device 470 includes an arm 474 and a cleaning nozzle 482.
The cleaning nozzle 482 ejects a liquid L2 as a cleaning liquid. The liquid L2 may be pure water, deaerated water, or the like, and may have the same composition as the liquid L1 or a different composition. A pipe, not shown, is connected to the cleaning nozzle 482, and the cleaning nozzle 482 discharges a liquid L2, which is supplied from a liquid source, not shown, introduced through the pipe. In the illustrated example, the cleaning nozzle 482 is a nozzle that discharges the liquid L1 so as to spread along a plane, but the cleaning nozzle 482 may be a straight nozzle that discharges the liquid L1 in substantially the same direction.
The cleaning device 470 includes a driving mechanism 476, and the driving mechanism 476 is configured to rotate the arm 474. The driving mechanism 476 can be realized by a known mechanism such as a motor. The arm 474 is a plate-like member extending in the horizontal direction from the driving mechanism 476. The cleaning nozzle 482 is held to the arm 474. The drive mechanism 476 is configured to move the cleaning nozzle 482 between a cleaning position between the plating tank 410 and the substrate holder 440 and a retracted position retracted from between the plating tank 410 and the substrate holder 440 by rotating the arm 474.
The cleaning device 470 includes a tray member 478 disposed below the cleaning nozzle 482. The tray member 478 is configured to receive the liquid L2 discharged from the cleaning nozzle 482 and flowing down after contacting the substrate holder 440. In the present modification, the cleaning nozzle 482 and the arm 474 are housed in the tray member 478. The driving mechanism 476 is configured to rotate the cleaning nozzle 482, the arm 474, and the tray member 478 together between the cleaning position and the retracted position. However, the driving mechanism 476 may be configured to drive the cleaning nozzle 482, the arm 474, and the tray member 478, respectively.
In the method for cleaning the substrate holder 440 according to the present modification, after the liquid L1 is discharged from the discharge port 60 into the substrate holder 440 to which the substrate Wf is not attached, the liquid L1 is moved inside the substrate holder 440 by at least one of the rotation of the substrate holder 440 by the rotation mechanism 446 and the tilting of the substrate holder 440 by the tilting mechanism 447. By this movement, the back surface BS of the floating plate 492-2, the contact member 494-4, the liquid holding portion 494L, the seal member 494-2, and the like can be cleaned. After the inside of the substrate holder 440 is cleaned, the liquid L1 flows down from between the floating plate 492-2 and the sealing member 494-2 toward the tray member 478, so that thinning of the plating liquid can be suppressed. On the other hand, the surface of the floating plate 492-2 on the side where the substrate Wf is disposed and the supporting member 494 are cleaned by the liquid L2 discharged from the cleaning nozzle 482. The liquid L1 and the liquid L2 flowing down the tray member 478 are discharged through a pipe not shown. Further, the liquid L1 discharged from the discharge port 60 may be used instead of the liquid L2 discharged from the cleaning nozzle 482.
In the present modification, the control module 800 is configured to discharge the liquid L1 from the discharge port 60 and clean at least one of the back surface BS, the contact member 494-4, the liquid holding portion 494L, and the sealing member 494-2 when the substrate Wf is not mounted on the substrate holder 440. This can prevent damage to the contact member 494-4 due to contamination of the plating solution or the like even after the substrate Wf is removed.
Fig. 26 is a flowchart showing a flow of the plating method according to this modification. In step S301, a plating process is performed on the substrate Wf. After step S301, step S302 is performed. In step S302, the substrate Wf is removed from the substrate holder 440. After step S302, step S303 is performed. In step S303, the liquid L1 is discharged onto the back surface BS of the floating plate 492-2 as the pressing member. After step S303, step S304 is performed. In step S304, the tilting mechanism 447 or the rotating mechanism 446 tilts or rotates the substrate holder 440, respectively. After step S304, the process ends.
Modification 1-6
In the above embodiment, an inclined surface for discharging the liquid to the outside of the substrate holder may be formed in the support member of the substrate holder.
Fig. 27 is a longitudinal sectional view schematically showing a substrate holder 440B according to this modification. The substrate holder 440B has substantially the same structure as the substrate holder 440 of the above embodiment, but is different from the substrate holder 440 in that a support member 494A is provided in place of the support member 494. The support member 494A has substantially the same structure as the support member 494 described above, but differs from the support member 494 in that an inclined surface 494S is formed on the inner side surface of the side wall constituting the liquid holding portion 494L. The inclined surface 494S is formed to have a height that increases toward the radial outside, and is configured to discharge the liquid L1 toward the radial outside more easily than the side surface that extends vertically.
Fig. 28 is a longitudinal sectional view schematically showing a method of cleaning the substrate holder 440B according to this modification. The floating plate 492-2 is lowered to be in contact with the seal member 494-2, and then the liquid L1 is discharged from the discharge port 60, and is rotated by the rotation mechanism 446. The liquid L1 on the back surface BS of the floating plate 492-2 moves radially outward by the centrifugal force of rotation, passes over the inclined surface 494S of the liquid holding portion 494L, and is discharged to the outside of the substrate holder 440B from between the columnar 2 nd upper members 496 (arrow a 50). Accordingly, the liquid L1 smoothly flows radially outward, and therefore the contact member 494-4 can be efficiently cleaned.
Fig. 29 is a flowchart showing a flow of a plating method including a cleaning method of the substrate holder 440B according to this modification. The plating process is performed by the control module 800. In step S401, a plating process is performed on the substrate Wf. After step S401, step S402 is performed. In step S402, the substrate Wf is removed from the substrate holder 440B. After step S402, step S403 is performed. In step S403, the floating plate 492-2 as the pressing member is brought into contact with the seal member 494-2. After step S403, step S404 is performed. In step S404, the liquid L1 is discharged onto the back surface BS of the floating plate 492-2. After step S404, step S405 is performed. In step S405, the rotation mechanism 446 rotates the substrate holder 440B. After step S405, the process ends.
Embodiment 2
The plating apparatus according to embodiment 2 has the same configuration as the plating apparatus 1000 according to embodiment 1 described above, but differs from the plating apparatus 1000 in that a plating module 4000 is provided instead of the plating module 400. Hereinafter, parts and the like showing the same structure and function as those of the above embodiment will be referred to by the same reference numerals, and descriptions thereof will be omitted appropriately.
Fig. 30 is a longitudinal sectional view schematically showing a plating module 4000 of the present embodiment. The plating module 4000 has the same structure as the plating module 400 described above, but differs from the plating module 400 in that it includes a substrate holder 4400 in place of the substrate holder 440, and further includes a conductivity meter 406 and a tray 406T.
The substrate holder 4400 has the same structure as the substrate holder 440 described above, but differs from the substrate holder 440 in that a discharge port 90 and a discharge flow path 80 that open to a liquid holding portion 494L are formed. In the illustrated example, the substrate holder 4400 includes a support member 4940. The support member 4940 has a discharge port 90 formed on the inner surface of the support member 4940 constituting the side wall of the liquid holding portion 494L. By forming the discharge port 90 inside the substrate holder 4400, the mixed matter contained in the liquid L1 of the liquid holding portion 494L can be discharged in a state where the substrate Wf is mounted, and adverse effects of the mixed matter on the contact member 494-4 and the like can be suppressed. In addition, by discharging the liquid L1 in advance before removing the substrate Wf, the possibility that the liquid L1 flows down to the plating liquid and thin the plating liquid at the time of removing the substrate Wf can be reduced. Since the liquid L1 can be discharged and discharged, the amount of the liquid L1 that can be held by the substrate holder 4400 is not limited, and more liquid L1 can be supplied to the liquid holding portion 494L, so that adverse effects of the mixed matter on the contact member 494-4 and the like can be further suppressed.
The discharge flow path 80 communicates the discharge port 90 with the outside of the substrate holder 4400 through the inside of the substrate holder 4400. This makes it possible to appropriately adjust the plating liquid so that the discharged liquid L1 flows down to the plating liquid and thins the plating liquid. The discharge of the liquid L1 from the discharge port 90 can be controlled by a valve, a pump, or the like, not shown, provided in the discharge flow path 80. In the illustrated example, the discharge channel 80 passes through the support member 4940, the 2 nd upper member 496, the 1 st upper member 493, and the inside of the rotation shaft 491 in this order from the discharge port 90, but is not particularly limited as long as the liquid L1 can be discharged from the inside of the substrate holder 4400. In the illustrated example, the liquid L1 discharged from the discharge channel 80 to the outside of the substrate holder 4400 passes through the tray 406T and is used for measuring the conductivity by the conductivity meter 406. The plating module 4000 may not include a conductivity meter.
Fig. 31 is a flowchart showing a flow of an example of the plating method according to the present embodiment. The plating process is performed by the control module 800. In step S501, the substrate Wf is mounted to the substrate holder 4400. After step S501, step S502 is performed. In step S502, the liquid L1 is discharged from the discharge port 60. The ejected liquid L1 is held by the liquid holding portion 494L. Here, in order to move the liquid L1 toward the liquid holding portion 494L or to distribute the liquid L1 more uniformly in the liquid holding portion 494L, the substrate holder 4400 may be rotated or tilted by the rotating mechanism 446 or the tilting mechanism 447. After step S502, step S503 is performed.
In step S503, the 1 st elevating mechanism 442 lowers the substrate holder 4400, and the substrate holder 4400 is immersed in a plating solution. After step S503, step S504 is performed. In step S504, a plating process is performed on the substrate Wf. In steps S503 and S504, since the liquid L1 is held by the liquid holding portion 494L, the concentration of the mixed matter is reduced, and adverse effects of the mixed matter on the contact member 494-4 and the like can be suppressed. After step S504, step S505 is performed.
In step S505, the liquid L1 is discharged from the discharge port 90. For example, the liquid L1 can be discharged from the inside of the substrate holder 4400 by leaving the liquid L1 to the extent of covering the substrate contact 494-4b of the contact member 494-4. The liquid L1 inside the substrate holder 4400 may be entirely discharged. After step S505, step S506 is performed. In step S506, the substrate Wf is removed from the substrate holder 4400. In step S505, the amount of the liquid L1 in the substrate holder 440 is reduced, so that the liquid L1 can be prevented from flowing down to the plating liquid and thinning the plating liquid when the substrate Wf is removed. The removed substrate Wf is transferred to the cleaning module 500.
The following modifications are also within the scope of the present invention, and can be combined with the above-described embodiment or other modifications. In the following modification examples, parts and the like showing the same structures and functions as those of the above-described embodiments are referred to by the same reference numerals, and descriptions thereof are omitted appropriately.
Modification 2-1
In the above embodiment, the ejection operation and the discharge operation may be performed in a state where the substrate holder 4400 is immersed in the plating solution. Hereinafter, the operation of ejecting the liquid L1 from the ejection port 60 will be referred to as an ejection operation, and the operation of ejecting the liquid L1 from the ejection port 90 will be referred to as an ejection operation.
Fig. 32 is a flowchart showing a flow of the plating method according to this modification. The plating method is performed by control of the control module 800. In step S601, the substrate Wf is mounted to the substrate holder 4400. After step S601, step S602 is performed. In step S602, the 1 st elevating mechanism 442 lowers the substrate holder 4400, and the substrate holder 4400 is immersed in a plating solution. After step S602, step S603 is performed.
In step S603, the substrate holder 4400 is immersed in the plating liquid, and the liquid L1 is discharged from the discharge port 60 and the liquid L1 is discharged from the discharge port 90. The ejection operation and the discharge operation may be performed any number of times greater than 1. If foreign matter adheres to the portions of the sealing member 494-2 and the substrate Wf that are in contact with each other or if there is damage, leakage occurs after sealing, and when the substrate holder 4400 is immersed in the plating solution, the plating solution or the like may intrude into the liquid holding portion 494L. In this modification, by performing the ejection operation and the discharge operation in a state where the substrate holder 4400 is immersed in the plating solution, the mixed matter of the plating solution or the like that has entered after immersion can be discharged, and the negative influence of the mixed matter on the contact member 494-4 or the like can be reduced.
The control module 800 can stop the discharge operation and the ejection operation when the conductivity of the discharged liquid L1 measured by the conductivity meter 406 is equal to or less than a predetermined threshold value. Thus, the plating process can be performed more reliably in a state where the concentration of the mixed matter present in the liquid holding portion 494L is low, based on the conductivity. After step S603, step S604 is performed. In step S604, a plating process is performed on the substrate Wf.
Modification 2-2
In the above embodiment, the discharge operation may be performed while the plating process is being performed. Thus, the concentration of the mixed matter can be reduced during the plating process, and adverse effects of the mixed matter on the contact member 494-4 and the like can be suppressed more reliably.
The amount of the liquid L1 discharged into the substrate holder 4400 is referred to as a discharge amount, and the amount of the liquid L1 discharged from the inside of the substrate holder 4400 is referred to as a discharge amount. The control module 800 can control at least one of the discharge amount and the ejection amount based on the conductivity of the liquid L1 to be ejected measured by the conductivity meter 406. For example, if the value of the conductivity of the liquid L1 measured is higher than the predetermined threshold value, there is a possibility that the concentration of the mixed material is high, which may adversely affect the deposition of the metal component or the like, and both the ejection amount and the discharge amount can be increased. Alternatively, in this case, only the ejection amount may be increased so as to increase the liquid surface of the liquid holding portion 494L and decrease the concentration of the mixed matter. The ejection amount or discharge amount per unit time may be controlled.
The manner in which the ejection operation and the discharge operation are controlled by the control module 800 is not particularly limited. The ejection operation and the discharge operation may be performed simultaneously in parallel, or may be performed at different times.
The control module 800 may be configured to intermittently perform at least one of the ejection operation and the discharge operation. This can effectively use the liquid L1 and reduce the adverse effect of the mixed matter on the contact member 494-4 and the like. The control module 800 may be configured to always perform at least one of the ejection operation and the discharge operation during the plating process. This can further reduce the negative influence of the mixture on the plating process during the plating process.
Fig. 33 is a flowchart showing a flow of the plating method according to this modification. The plating method is performed by control of the control module 800. Steps S701 and S702 are the same as steps S601 and S602 in the flowchart of fig. 32, and therefore, the description thereof is omitted. After step S702, step S703 is performed. In step S703, while the substrate Wf is being subjected to the plating process, the liquid L1 is discharged from the discharge port 60 and the liquid L1 is discharged from the discharge port 90. Preferably, after the plating process is completed, the substrate Wf is removed from the substrate holder 4400 after the liquid L1 is discharged from the discharge port 90.
Modification 2-3
In the above embodiment, when the substrate holder 4400 is immersed in the plating solution, the level of the liquid L1 in the substrate holder 4400 may be lower than the level of the plating solution in the plating tank 410.
Fig. 34 is a longitudinal sectional view schematically showing a substrate holder 4400 according to the plating method of the present modification. The control module 800 controls the 1 st elevation mechanism 442 or the ejection or discharge of the liquid L1 so that the height HL1 of the liquid level of the liquid L1 of the substrate holder 4400 is lower than the height HS of the liquid level of the plating liquid. For example, the level of the liquid L1 has a height HL1 that is higher than the level of the plating liquid HS. In this case, the 1 st elevating mechanism 442 may lower the substrate holder 4400, or may eject the liquid L1 from the ejection port 60 to raise the liquid level HL1 of the liquid L1.
The control module 800 according to the present modification is configured to impregnate the substrate holder 4400 with the plating solution so that the liquid level HL1 of the liquid L1 in the substrate holder 4400 is lower than the liquid level HS of the plating solution. Since the inside of the plating tank 410 and the substrate holder 4400 is at atmospheric pressure, the plating liquid is pressurized at a higher pressure than the liquid L1, and thus leakage of the liquid L1 into the plating liquid can be suppressed to thin the plating liquid. Further, by ejecting and discharging the liquid L1 in the substrate holder 4400, the plating solution and other components that have entered the substrate holder 4400 can be discharged. In this way, the concentration of the mixed material in the vicinity of the contact member 494-4 and the substrate Wf can be reduced, and thinning of the plating solution can be suppressed. In addition, in the case where the discharge port 90 is formed in the substrate holder 4400, the liquid level of the liquid L1 may be higher than the back surface BS of the floating plate 492-2.
Modification examples 2 to 4
In the above embodiments, the liquid discharge port may be formed in the back plate assembly.
Fig. 35 is a longitudinal sectional view schematically showing a substrate holder 4400A according to this modification. The substrate holder 4400A has substantially the same structure as the substrate holder 4400 described above, but is different from the substrate holder 4400 in that a discharge port 91 and a discharge flow path 81 are formed instead of the discharge port 90 and the discharge flow path 80. The discharge port 91 is formed on the surface of the back plate 492-1 on the substrate Wf side. The discharge channel 81 is configured to discharge the liquid L1 from the discharge port 91 to the outside of the substrate holder 4400A through the back plate 492-1 and the rotation shaft 491. In this way, the discharge port 91 is formed in a member disposed above the liquid holding portion 494L, so that the discharge flow path 91 can be shortened, and the substrate holder 4400A with a simpler structure can be realized. In this way, the discharge port 91 may be provided in at least one of the rotation shaft 491, the back plate assembly 492, and the side wall constituting the liquid holding portion 494L, from the viewpoint of being capable of flexible design as needed.
Modification examples 2 to 5
In the above embodiment, the liquid discharge port may be formed at a position protruding into the space inside the substrate holder.
Fig. 36 is a longitudinal sectional view schematically showing a substrate holder 4400B according to this modification. The substrate holder 4400B has substantially the same structure as the substrate holder 4400 described above, but is different from the substrate holder 4400 in that a discharge port 92 and a discharge flow path 82 are formed instead of the discharge port 90 and the discharge flow path 80. The discharge port 92 is formed at an end of the tubular member and at a position protruding from a surface of the back plate 492-1 on the substrate Wf side. The discharge channel 82 is configured to discharge the liquid L1 from the discharge port 92 to the outside of the substrate holder 4400B through the back plate 492-1 and the rotation shaft 491. By forming the discharge port 92 at a position protruding into the space inside the substrate holder 4400B in this way, more flexible design of the substrate holder 4400B can be made possible. The discharge port 92 may be formed at a position protruding from an arbitrary portion of the substrate holder 4400B other than the back plate 492-1.
Modification examples 2 to 6
In the above embodiment, the liquid discharged from the discharge port may be discharged from the discharge port.
Fig. 37 is a longitudinal sectional view schematically showing a plating module 4000A of the present modification. The plating module 4000A has substantially the same structure as the plating module 4000 described above, but differs from the plating module 4000 in that a substrate holder 4400C is provided instead of the substrate holder 4400 and in that an ion exchange column 407 is provided. The substrate holder 4400C has substantially the same structure as the substrate holder 4400, but is different from the substrate holder 4400 in that the ejection port 62 and the supply flow path 51 are provided instead of the ejection port 60 and the supply flow path 50.
The ejection port 62 is formed on the inner side surface of the support member 4940 constituting the liquid holding portion 494L. Therefore, in the present modification, both the ejection port 62 and the discharge port 90 are open to the liquid holding portion 492L. The supply channel 51 is connected to allow the liquid L1 to move from the ion exchange column 407 to the discharge port 62 through the rotation shaft 491, the 1 st upper member 493, the 2 nd upper member 496, and the support member 4940. The supply channel 51 is connected to be movable to supply the liquid L1 from a liquid source, not shown.
Fig. 38 is a conceptual diagram showing the arrangement of the ejection port 62 and the discharge port 90 in this modification. In the present modification, the contact members 494-4 are arc-shaped, and 8 contact members 494-4 are arranged in a ring shape in the liquid holding portion 494L. An ejection port 62 or an exhaust port 90 is provided between the adjacent 2 contact members 494-4. In the illustrated example, the ejection ports 62 and the discharge ports 90 are alternately arranged in the circumferential direction, but are not particularly limited as long as ejection and discharge of the liquid L1 are possible. From the same point of view, the number of the ejection openings 62 and the discharge openings 90 may be 1 or more, and is not particularly limited. The shape of the contact member 494-4 is appropriately designed to easily supply power to the substrate Wf, and is not limited to the illustrated example.
Returning to fig. 37, the liquid L1 discharged from the discharge port 90 is introduced into the ion exchange column 407 through the discharge flow path 80. The ion exchange column 407 is provided with an ion exchange resin capable of deionizing the liquid L1. In the ion exchange column 407, the liquid L1 is used for ion exchange, whereby the conductivity is reduced. The liquid L1 discharged from the ion exchange column 407 passes through the supply channel 51 and is discharged from the discharge port 62. The discharge channel 80 and the supply channel 51 constitute channels that communicate the discharge port 90 with the discharge port 62 without passing through the liquid holding portion 494L and the space inside the substrate holder 4400C that communicates with the liquid holding portion 494L. In this way, the substrate holder 4000A has a structure in which the liquid L1 circulates inside and outside the substrate holder 4400C.
In the illustrated example, the ion exchange column 407 is used to avoid a higher conductivity of the circulating liquid L1. However, the plating module 4000A may be provided with a conductivity meter 406 (fig. 30) instead of the ion exchange column 407 or in addition thereto. In this case, when the conductivity of the discharged liquid L1 measured by the conductivity meter 406 is equal to or less than a predetermined threshold value, a new liquid L1 that is not discharged into the substrate holder 4400C may be discharged from the discharge port 62.
In the plating method of the present modification, the substrate holder 4400C further includes a flow path that communicates the discharge port 90 with the discharge port 62 without passing through the liquid holding portion 494L and the space inside the substrate holder 4400C that communicates with the liquid holding portion 494L, and the control module 800 is configured to discharge the liquid L1 discharged from the discharge port 90 from the discharge port 62. Thus, the liquid L1 can be used efficiently, and the adverse effect of the mixed matter on the contact member 494-4 can be reduced. In circulating the liquid L1, the positions of the ejection port 62 and the discharge port 90 are not particularly limited. The liquid L1 may be circulated not through the ejection port 62 but through the ejection port 60 according to the above embodiment. From the viewpoint of flexible design as needed, such as shortening the supply flow path, the discharge port 62 may be disposed in at least one of the rotation shaft 491, the back plate assembly 492, and the side wall constituting the liquid holding portion 494L.
Modification examples 2 to 7
In the above embodiment, the plating module 4000 may not include the rotation mechanism 446. The plating module 4000 may be configured as a dip plating apparatus. In this case, as described in patent document 3, the substrate Wf, the resistor 450, and the anode 430 can be arranged in the vertical direction. Even without rotating the substrate holder 4400, the contact members 494-4 and the like can be cleaned by the ejection operation and the discharge operation at least at one time point before, during, and after the plating process of the substrate holder 4400 is immersed.
The present invention can also be described as follows.
Mode 1
According to embodiment 1, there is provided a plating apparatus including: a plating tank configured to house a plating solution; a substrate holder configured to hold a substrate to be subjected to a plating process; a rotation mechanism that rotates the substrate holder; a lifting mechanism for lifting the substrate holder; and a control device, wherein the substrate support comprises: a contact member configured to be in contact with the substrate so as to be capable of supplying power; a sealing member configured to seal between the substrate holder and the substrate; a pressing member disposed opposite to the sealing member and configured to press the substrate against the sealing member; a liquid holding portion having the contact member inside and configured to be capable of holding a liquid when the substrate is sealed by the sealing member; and a discharge port configured to discharge the liquid by being opened to a space inside the liquid holding portion or the substrate holder, the space communicating with the liquid holding portion, or being disposed laterally of the substrate holder. According to the embodiment 1, a plating apparatus capable of suppressing adverse effects on contact members and the like due to the mixed matter inside the substrate holder can be provided.
Mode 2
According to the aspect 2, in the aspect 1, the ejection port is formed in at least one of a side wall constituting the liquid holding portion, and a rotation shaft and a back plate assembly of the substrate holder. According to the embodiment 2, the liquid supply passage and the like can be shortened, and flexible design can be performed as needed.
Mode 3
According to the aspect 3, in the aspect 1 or 2, the liquid holding portion includes an outer surface of the pressing member, and inner and bottom surfaces of a support member that supports the contact member. According to the aspect 3, when the substrate is sealed by the sealing member, the contact member can be efficiently covered with a small amount of liquid.
Mode 4
According to claim 4, in any one of claims 1 to 3, the control device is configured to discharge the liquid to the liquid holding portion or the space communicating with the liquid holding portion through the discharge port when the substrate is sealed by the sealing member. According to the aspect 4, the liquid can be stored in the liquid holding portion in a state where the liquid can be held, and adverse effects on the contact member or the like due to the mixed matter can be suppressed.
Mode 5
According to aspect 5, in any one of aspects 1 to 4, the substrate holder is configured to hold the surface to be plated of the substrate so as to face downward, and the rotation mechanism rotates the substrate holder about an axis intersecting the surface to be plated when the substrate is placed on the substrate holder. According to aspect 5, the liquid discharged into the substrate holder can be moved to the liquid holding portion or can be distributed more uniformly in the liquid holding portion by the rotation mechanism. In addition, by performing the plating treatment while rotating the substrate holder, the thickness of the formed plating can be made more uniform.
Mode 6
According to claim 6, in claim 5, the discharge port is formed above the pressing member, and is configured to discharge the liquid onto a back surface of the pressing member, the back surface being a surface on which the substrate is disposed. According to the aspect 6, by forming the ejection port above the pressing member, the supply flow path to the ejection port can be shortened and simplified. In addition, by forming the liquid to be discharged to the back surface of the pressing member, the liquid can be efficiently supplied to the contact member by the rotating mechanism.
Mode 7
According to claim 7, in claim 6, a recess for flowing or holding the liquid is formed in the back surface of the pressing member. According to the aspect 7, the liquid can be efficiently moved to the liquid holding portion or the liquid can be more uniformly distributed in the liquid holding portion.
Mode 8
According to claim 8, in claim 7, the concave portion is formed radially, or is formed so as to surround a central axis of the pressing member, or is formed at an outer peripheral portion of the pressing member. According to the aspect 8, the liquid can be moved to the liquid holding portion more reliably and efficiently, or the liquid can be distributed more uniformly in the liquid holding portion.
Mode 9
According to claim 9, in any one of claims 6 to 8, the control device is configured to discharge the liquid from the discharge port to clean at least one of the back surface, the contact member, the liquid holding portion, and the sealing member when the substrate is not mounted on the substrate holder. According to the aspect 9, damage to the contact member or the like due to the mixed material after the substrate is removed can be suppressed.
Mode 10
According to a mode 10, in a mode 9, the liquid holding portion includes an inclined surface having a height that increases toward a radial direction outside, and the control device is configured to control the rotation mechanism to rotate the substrate holder in a state where the pressing member is brought into contact with the sealing member when the substrate holder is not mounted with the substrate, thereby discharging the liquid from the liquid holding portion toward an outside of the inclined surface beyond the inclined surface. According to the aspect 10, since the liquid smoothly flows radially outward, the contact member can be cleaned efficiently.
Mode 11
According to claim 11, in any one of claims 5 to 10, the control device is configured to control the rotation mechanism to rotate the substrate holder after the liquid is discharged to the space through the discharge port, thereby moving the liquid to the liquid holding portion or distributing the liquid more uniformly in the liquid holding portion. According to embodiment 11, the liquid can be supplied to the contact member by appropriately using the rotation mechanism for making the thickness of the formed plating more uniform during the plating process.
Mode 12
According to claim 12, in any one of claims 1 to 11, the control device is configured to control the tilting mechanism to tilt the substrate holder after the liquid is discharged to the space through the discharge port, thereby moving the liquid to the liquid holding portion or distributing the liquid more uniformly in the liquid holding portion. According to the aspect 12, the liquid can be supplied to the contact member more reliably by gravity.
Mode 13
According to claim 13, in claim 12, the control device is configured to control the tilting mechanism to tilt the substrate holder so that the liquid moves toward the liquid holding portion when the lifting mechanism is controlled to impregnate the substrate holder with the substrate mounted in the plating bath. According to aspect 13, the substrate holder can be immersed so that bubbles do not enter the surface to be plated, and the liquid can be moved toward the liquid holding portion.
Mode 14
According to claim 14, in any one of claims 1 to 13, the control device is configured to discharge the liquid in a predetermined amount so that a surface of the liquid becomes a height between the lower surface of the substrate and the upper surface of the pressing member in the liquid holding portion. According to the aspect 14, the contact member can be sufficiently covered with the liquid, and the negative influence on the seed layer due to the dissolved oxygen can be reduced. In addition, the substrate can be rotated efficiently, and the possibility of the plating solution becoming thin due to the liquid flowing down to the plating solution can be reduced.
Mode 15
According to claim 15, in any one of claims 1 to 14, a discharge port is further provided, the discharge port being opened to the liquid holding portion or the space communicating with the liquid holding portion, and the liquid existing in the liquid holding portion or the space is discharged. According to the aspect 15, the mixed matter contained in the liquid is discharged in a state where the substrate is mounted on the substrate holder, and adverse effects of the mixed matter on the contact member or the like can be suppressed.
Mode 16
According to claim 16, in claim 15, the discharge port is formed in at least one of a side wall constituting the liquid holding portion, and a rotation shaft and a back plate assembly of the substrate holder. According to embodiment 16, the discharge flow path and the like can be shortened, and flexible design can be performed as needed.
Mode 17
According to claim 17, in any of claims 15 and 16, the substrate holder further includes a flow path that communicates the discharge port with an outside of the substrate holder. According to the aspect 17, the discharged liquid can be appropriately adjusted so as not to flow down to the plating liquid and so as to thin the plating liquid.
Mode 18
According to claim 18, in any of claims 15 and 16, the substrate holder further includes a flow path that communicates the discharge port with the discharge port without passing through the liquid holding portion and the space, and the control device is configured to discharge the liquid discharged from the discharge port. According to the embodiment 18, the liquid can be used efficiently, and the adverse effect of the mixed matter on the contact member or the like can be reduced.
Mode 19
According to claim 19, in claim 18, at least one of an ion exchange resin and a conductivity meter is further provided in the flow path. According to aspect 19, the discharged liquid can be discharged from the discharge port in a state where the conductivity is low.
Mode 20
According to claim 20, in any one of claims 15 to 19, the control device is configured to simultaneously perform, in a state in which the substrate is mounted on the substrate holder, a discharge operation of discharging the liquid from the discharge port and a discharge operation of discharging at least a part of the liquid held in the liquid holding portion from the discharge port, or simultaneously or at different times. According to the aspect 20, the amount of the liquid that can be held by the substrate holder is not limited, and more liquid can be supplied to the liquid holding portion, and adverse effects on the contact member or the like due to the mixed matter can be further suppressed.
Mode 21
According to claim 21, in claim 20, the control device is configured to perform the ejection operation and the discharge operation in a state where the substrate holder on which the substrate is mounted is immersed in the plating solution. According to the aspect 21, the mixed matter such as the plating solution that has entered due to the immersion can be discharged, and the adverse effect of the mixed matter on the contact member or the like can be reduced.
Mode 22
According to claim 22, in claim 21, the control device is configured to impregnate the substrate holder with the plating solution so that a level of the liquid in the substrate holder is lower than a level of the plating solution. According to the aspect 22, since the water pressure of the plating solution is higher than the water pressure of the liquid in the substrate holder, leakage of the liquid can be suppressed to thin the plating solution.
Mode 23
According to claim 23, in the case of claim 21 or 22, the control device is configured to perform the ejection operation and the discharge operation in a state where the plating process is performed. According to the aspect 23, it is possible to more reliably suppress adverse effects of the mixed matter on the contact member or the like during the plating process.
Mode 24
According to aspect 24, in any one of aspects 20 to 23, the control device is configured to perform the ejecting operation after the plating process is performed and before the substrate is removed. According to the aspect 24, the plating solution can be prevented from flowing down when the substrate is removed, and the plating solution can be thinned.
Mode 25
According to aspect 25, in any one of aspects 20 to 24, the control device is configured to intermittently perform at least one of the ejection operation and the discharge operation. According to the aspect 25, the liquid can be used efficiently, and the adverse effect of the mixed matter on the contact member or the like can be reduced.
Mode 26
According to claim 26, in any one of claims 20 to 24, the control device is configured to always perform at least one of the ejection operation and the discharge operation during the plating process. According to the aspect 26, the negative influence of the mixed matter on the contact member or the like can be reduced more reliably.
Mode 27
According to claim 27, in any one of claims 1 to 26, the liquid has a conductivity lower than a predetermined threshold value, or is subjected to a degassing treatment. According to the aspect 27, it is possible to suppress adverse effects on the contact member or the like due to ions, dissolved oxygen or the like contained in the liquid.
Mode 28
According to aspect 28, there is provided a plating method of performing a plating process by a plating apparatus including: a plating tank configured to house a plating solution; a substrate holder configured to hold a substrate to be subjected to the plating process; a rotation mechanism that rotates the substrate holder; and a lifting mechanism for lifting and lowering the substrate holder, wherein the substrate holder comprises: a contact member configured to be in contact with the substrate so as to be capable of supplying power; a sealing member configured to seal between the substrate holder and the substrate; a liquid holding portion having the contact member inside and configured to be capable of holding a liquid when the substrate holder and the substrate are sealed by the sealing member; and a discharge port that opens into a space of the liquid holding portion or the substrate holder that communicates with the liquid holding portion or that can be disposed laterally of the substrate holder, the plating method including the steps of: mounting the substrate to the substrate holder; ejecting the liquid from the ejection port; rotating the substrate holder so that the ejected liquid moves to the liquid holding portion or the liquid is more uniformly distributed in the liquid holding portion; and performing the plating process on the mounted substrate. According to the aspect 28, it is possible to suppress adverse effects on the contact member or the like due to the mixed matter inside the substrate holder.
The embodiments of the present invention have been described above, but the embodiments of the present invention are for easy understanding of the present invention, and the present invention is not limited thereto. The present invention is not limited to the above-described embodiments, but may be modified or improved without departing from the spirit thereof. The embodiments and modifications may be arbitrarily combined within a range in which at least a part of the above-described problems can be solved or within a range in which at least a part of the effects can be achieved, and the respective constituent elements described in the claims and the specification may be arbitrarily combined or omitted.
Description of the reference numerals
40A, 40B, 40C … recess; 50. 51 … supply flow path; 60. 61, 62, … spouting ports; 80. 81, 82 … discharge flow paths; 90. 91, 92 … outlet ports; 400. 400A, 400B, 400C, 4000A … plating modules; 406 … conductivity meter; 407 … ion exchange column; 410 … plating tank; 440. 440A, 440B, 4400A, 4400B, 4400C … substrate supports; 442 … 1 st lifting mechanism; 443 … No. 2 lifting mechanism; 446 … rotation mechanism; 447 … tilting mechanism; 470 … cleaning device; 482 and … cleaning nozzles; 490 … support; 491 … rotation axis; 492 … backplate assembly; 492-1 … backplate; 492-2, 492-2A, 492-2B, 492-2C … floating plates; 494. 494A, 4940 … support mechanisms; 494L … liquid retaining portions; 494S … inclined surfaces; 494-1 … support members; 494-2 … seal component; 494-4 … contact members; 494-4a … substrate contacts; 494-4b … body portion; 600 … liquid supply; 800 … control module; 1000 … plating apparatus; the central axis of the Ax1 … floating plate; the back of the BS … floating plate; height of the plated surface of H1 …; height of the back of the H2 … floating plate; the height of the liquid surface of the liquid from which HL1 … is ejected; height of the liquid level of HS … plating solution; l1, L2 … liquids; s1 … interior space; wf … substrate; wf-a … is plated.
Claims (28)
1. A plating apparatus is characterized by comprising:
a plating tank configured to house a plating solution;
a substrate holder configured to hold a substrate to be subjected to a plating process;
a rotation mechanism that rotates the substrate holder;
a lifting mechanism that lifts and lowers the substrate holder; and
the control device is used for controlling the control device,
the substrate holder is provided with:
a contact member configured to be in contact with the substrate so as to be capable of supplying power;
a sealing member configured to seal between the substrate holder and the substrate;
a pressing member disposed opposite to the sealing member and configured to press the substrate against the sealing member;
a liquid holding portion having the contact member inside and configured to be capable of holding a liquid when the substrate holder and the substrate are sealed by the sealing member; and
and a discharge port configured to discharge the liquid to a space inside the liquid holding portion or the substrate holder, the space being in communication with the liquid holding portion, or to be disposed laterally of the substrate holder.
2. A plating apparatus as recited in claim 1, wherein,
the ejection port is formed in at least one of a side wall constituting the liquid holding portion, and a rotation shaft and a back plate assembly of the substrate holder.
3. Plating device according to claim 1 or 2, characterized in that,
the liquid holding portion includes an outer surface of the pressing member, and inner surfaces and bottom surfaces of a support member that supports the contact member.
4. A plating apparatus according to any one of claims 1 to 3, characterized in that,
the control device is configured to discharge the liquid to the liquid holding portion or the space communicating with the liquid holding portion through the discharge port when the substrate is sealed by the sealing member.
5. A plating apparatus according to any one of claims 1 to 4, characterized in that,
the substrate support is configured to hold a plated surface of the substrate downward,
the rotation mechanism rotates the substrate holder about an axis intersecting the surface to be plated when the substrate is placed on the substrate holder.
6. A plating apparatus as recited in claim 5, wherein,
The ejection port is formed above the pressing member, and is configured to eject the liquid toward a back surface of a surface of the pressing member on which the substrate is disposed.
7. A plating apparatus according to claim 6, wherein,
a recess for flowing or holding the liquid is formed in the back surface of the pressing member.
8. A plating apparatus as recited in claim 7, wherein,
the concave portion is formed radially, surrounds a central axis of the pressing member, or is formed on an outer peripheral portion of the pressing member.
9. A plating apparatus as recited in any one of claims 6 to 8, characterized in that,
the control device is configured to discharge the liquid from the discharge port to clean at least one of the back surface, the contact member, the liquid holding portion, and the sealing member when the substrate is not mounted on the substrate holder.
10. A plating apparatus as recited in claim 9, wherein,
the liquid holding portion has an inclined surface whose height increases toward the radial outside,
the control device is configured to control the rotation mechanism to rotate the substrate holder in a state where the pressing member is brought into contact with the sealing member when the substrate is not mounted on the substrate holder, thereby discharging the liquid from the liquid holding portion beyond the inclined surface toward the outside of the inclined surface.
11. Plating device according to one of the claims 5 to 10, characterized in that,
the control device is configured to control the rotation mechanism to rotate the substrate holder after the liquid is discharged to the space through the discharge port, thereby moving the liquid to the liquid holding portion or distributing the liquid more uniformly in the liquid holding portion.
12. Plating device according to one of the claims 1 to 11, characterized in that,
further comprises a tilting mechanism for tilting the substrate holder,
the control device is configured to control the tilting mechanism to tilt the substrate holder after the liquid is discharged to the space through the discharge port, thereby moving the liquid to the liquid holding portion or distributing the liquid more uniformly in the liquid holding portion.
13. A plating apparatus as recited in claim 12, wherein,
the control device is configured to control the tilting mechanism to tilt the substrate holder so that the liquid moves toward the liquid holding portion when the substrate holder to which the substrate is attached is immersed in the plating bath by controlling the lifting mechanism.
14. Plating device according to one of the claims 1 to 13, characterized in that,
the control device is configured to discharge a predetermined amount of the liquid so that a surface of the liquid becomes a height between a lower surface of the substrate and an upper surface of the pressing member in the liquid holding portion.
15. Plating device according to one of the claims 1 to 14, characterized in that,
the liquid container further includes a discharge port that opens to the liquid holding portion or the space communicating with the liquid holding portion, and discharges the liquid present in the liquid holding portion or the space.
16. A plating apparatus as recited in claim 15, wherein,
the discharge port is formed in at least one of a side wall constituting the liquid holding portion, and a rotation shaft and a back plate assembly of the substrate holder.
17. Plating device according to claim 15 or 16, characterized in that,
the substrate holder further includes a flow path that communicates the discharge port with an outside of the substrate holder.
18. Plating device according to claim 15 or 16, characterized in that,
the substrate holder further includes a flow path that communicates the discharge port with the discharge port without passing through the liquid holding portion and the space,
The control device is configured to discharge the liquid discharged from the discharge port.
19. A plating apparatus as recited in claim 18, wherein,
the substrate holder further includes at least one of an ion exchange resin and a conductivity meter disposed in the flow path.
20. Plating device according to one of the claims 15-19, characterized in that,
the control device is configured to simultaneously perform an ejection operation of ejecting the liquid from the ejection port and a discharge operation of discharging at least a part of the liquid held in the liquid holding portion from the discharge port, in a state where the substrate is mounted on the substrate holder, or simultaneously perform the ejection operations at different times.
21. A plating apparatus as recited in claim 20, wherein,
the control device is configured to perform the ejection operation and the discharge operation in a state where the substrate holder to which the substrate is attached is immersed in the plating solution.
22. A plating apparatus as recited in claim 21, wherein,
the control device is configured to impregnate the substrate holder with the plating solution so that a level of the liquid in the substrate holder is lower than a level of the plating solution.
23. Plating device according to claim 21 or 22, characterized in that,
the control device is configured to perform the ejection operation and the discharge operation in a state where the plating process is performed.
24. Plating device according to one of the claims 20-23, characterized in that,
the control device is configured to perform the discharging operation after the plating process is performed and before the substrate is removed.
25. Plating device according to one of the claims 20-24, characterized in that,
the control device is configured to intermittently perform at least one of the ejection operation and the discharge operation.
26. Plating device according to one of the claims 20-24, characterized in that,
the control device is configured to always perform at least one of the ejection operation and the discharge operation during the plating process.
27. Plating device according to one of the claims 1 to 26, characterized in that,
the liquid has a conductivity lower than a prescribed threshold or is degassed.
28. A plating method for performing a plating process by a plating apparatus,
The plating method is characterized in that,
the plating apparatus includes:
a plating tank configured to house a plating solution;
a substrate holder configured to hold a substrate to be subjected to the plating process;
a rotation mechanism that rotates the substrate holder; and
a lifting mechanism which lifts and lowers the substrate holder,
the substrate holder is provided with:
a contact member configured to be in contact with the substrate so as to be capable of supplying power;
a sealing member configured to seal between the substrate holder and the substrate;
a liquid holding portion having the contact member inside and configured to be capable of holding a liquid when the substrate holder and the substrate are sealed by the sealing member; and
a discharge port that opens into a space of the liquid holding portion or the substrate holder, the space being in communication with the liquid holding portion, or that can be disposed laterally of the substrate holder,
the plating method comprises the following steps:
mounting the substrate to the substrate support;
ejecting the liquid from the ejection port;
Rotating the substrate holder to move the ejected liquid toward the liquid holding portion or to distribute the liquid more uniformly in the liquid holding portion; and
and carrying out the plating treatment on the installed substrate.
Applications Claiming Priority (1)
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PCT/JP2022/030375 WO2024033999A1 (en) | 2022-08-09 | 2022-08-09 | Plating device and plating method |
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CN116897226A true CN116897226A (en) | 2023-10-17 |
CN116897226B CN116897226B (en) | 2024-03-22 |
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JP (1) | JP7253125B1 (en) |
KR (1) | KR102707282B1 (en) |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20040140203A1 (en) * | 2003-01-21 | 2004-07-22 | Applied Materials,Inc. | Liquid isolation of contact rings |
JP2009293088A (en) * | 2008-06-06 | 2009-12-17 | Nec Electronics Corp | Electroplating device and electroplating method |
JP2019026863A (en) * | 2017-07-25 | 2019-02-21 | 上村工業株式会社 | Work-piece holding jig and electroplating device |
JP7081063B1 (en) * | 2021-10-18 | 2022-06-06 | 株式会社荏原製作所 | Plating method and plating equipment |
TW202229658A (en) * | 2020-12-30 | 2022-08-01 | 日商荏原製作所股份有限公司 | Wetting method and plating device of substrate wherein the method includes a holding step, a supply step and two descending steps |
-
2022
- 2022-08-09 WO PCT/JP2022/030375 patent/WO2024033999A1/en unknown
- 2022-08-09 CN CN202280014805.4A patent/CN116897226B/en active Active
- 2022-08-09 JP JP2022569487A patent/JP7253125B1/en active Active
- 2022-08-09 KR KR1020237025079A patent/KR102707282B1/en active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040140203A1 (en) * | 2003-01-21 | 2004-07-22 | Applied Materials,Inc. | Liquid isolation of contact rings |
JP2009293088A (en) * | 2008-06-06 | 2009-12-17 | Nec Electronics Corp | Electroplating device and electroplating method |
JP2019026863A (en) * | 2017-07-25 | 2019-02-21 | 上村工業株式会社 | Work-piece holding jig and electroplating device |
CN110959051A (en) * | 2017-07-25 | 2020-04-03 | 上村工业株式会社 | Work holding jig and plating apparatus |
TW202229658A (en) * | 2020-12-30 | 2022-08-01 | 日商荏原製作所股份有限公司 | Wetting method and plating device of substrate wherein the method includes a holding step, a supply step and two descending steps |
JP7081063B1 (en) * | 2021-10-18 | 2022-06-06 | 株式会社荏原製作所 | Plating method and plating equipment |
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JPWO2024033999A1 (en) | 2024-02-15 |
JP7253125B1 (en) | 2023-04-05 |
CN116897226B (en) | 2024-03-22 |
KR20240022440A (en) | 2024-02-20 |
KR102707282B1 (en) | 2024-09-20 |
WO2024033999A1 (en) | 2024-02-15 |
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