TW202224219A - 熱電轉換材料層 - Google Patents

熱電轉換材料層 Download PDF

Info

Publication number
TW202224219A
TW202224219A TW110135830A TW110135830A TW202224219A TW 202224219 A TW202224219 A TW 202224219A TW 110135830 A TW110135830 A TW 110135830A TW 110135830 A TW110135830 A TW 110135830A TW 202224219 A TW202224219 A TW 202224219A
Authority
TW
Taiwan
Prior art keywords
conversion material
thermoelectric conversion
material layer
thermoelectric
thermoelectric semiconductor
Prior art date
Application number
TW110135830A
Other languages
English (en)
Chinese (zh)
Inventor
山崎俊
加藤邦久
関佑太
Original Assignee
日商琳得科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商琳得科股份有限公司 filed Critical 日商琳得科股份有限公司
Publication of TW202224219A publication Critical patent/TW202224219A/zh

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/856—Thermoelectric active materials comprising organic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW110135830A 2020-09-30 2021-09-27 熱電轉換材料層 TW202224219A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-166453 2020-09-30
JP2020166453 2020-09-30

Publications (1)

Publication Number Publication Date
TW202224219A true TW202224219A (zh) 2022-06-16

Family

ID=80950201

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110135830A TW202224219A (zh) 2020-09-30 2021-09-27 熱電轉換材料層

Country Status (3)

Country Link
JP (1) JPWO2022071043A1 (enrdf_load_stackoverflow)
TW (1) TW202224219A (enrdf_load_stackoverflow)
WO (1) WO2022071043A1 (enrdf_load_stackoverflow)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010245299A (ja) * 2009-04-06 2010-10-28 Three M Innovative Properties Co 複合材熱電材料及びその製造方法
TWI491556B (zh) * 2012-12-21 2015-07-11 Ind Tech Res Inst 熱電材料及其製造方法
JP5960178B2 (ja) * 2013-03-28 2016-08-02 富士フイルム株式会社 熱電変換素子の製造方法および熱電変換層用分散物の製造方法
JP7348192B2 (ja) * 2018-08-28 2023-09-20 リンテック株式会社 半導体素子

Also Published As

Publication number Publication date
JPWO2022071043A1 (enrdf_load_stackoverflow) 2022-04-07
WO2022071043A1 (ja) 2022-04-07

Similar Documents

Publication Publication Date Title
WO2016104615A1 (ja) ペルチェ冷却素子及びその製造方法
TWI817941B (zh) 熱電轉換模組
JP5712340B1 (ja) 熱電変換材料及びその製造方法
WO2018139475A1 (ja) フレキシブル熱電変換素子及びその製造方法
JP7698952B2 (ja) 熱電変換素子の製造方法
JP2017041540A (ja) ペルチェ冷却素子及びその製造方法
CN112602202A (zh) 热电转换材料的芯片的制造方法、以及使用了通过该制造方法得到的芯片的热电转换组件的制造方法
TWI816899B (zh) 熱電變換材料之晶片
TW202023073A (zh) 半導體元件
US11974504B2 (en) Thermoelectric conversion body, thermoelectric conversion module, and method for manufacturing thermoelectric conversion body
JP7149476B2 (ja) 熱電変換モジュール
TW202224219A (zh) 熱電轉換材料層
JP7631188B2 (ja) 熱電変換材料層及びその製造方法
WO2020196709A1 (ja) 熱電変換材料のチップの製造方法
JP7207858B2 (ja) 熱電変換モジュール
TWI875999B (zh) 熱電變換模組
WO2023013590A1 (ja) 熱電変換材料層及び熱電変換モジュール
US12239020B2 (en) Thermoelectric conversion module
JP2021057481A (ja) 熱電変換素子の製造方法
WO2020203611A1 (ja) 熱電変換材料のチップへのハンダ受理層形成方法
TW202205702A (zh) 熱電轉換模組及其製造方法
JP2006108419A (ja) 熱電材料の製造方法および熱電素子