TW202224011A - Wafer processing method capable of easily removing a reinforcing part remaining on an outer peripheral part of a wafer - Google Patents

Wafer processing method capable of easily removing a reinforcing part remaining on an outer peripheral part of a wafer Download PDF

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TW202224011A
TW202224011A TW110145282A TW110145282A TW202224011A TW 202224011 A TW202224011 A TW 202224011A TW 110145282 A TW110145282 A TW 110145282A TW 110145282 A TW110145282 A TW 110145282A TW 202224011 A TW202224011 A TW 202224011A
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wafer
cutting
reinforcing
adhesive tape
reinforcing portion
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岡村卓
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02076—Cleaning after the substrates have been singulated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The object of the present invention is to provide a wafer processing method capable of easily removing a reinforcing part remaining on an outer peripheral part of a wafer. A wafer processing method is configured to process a wafer. The wafer has a device region on the front side, a concave part formed in a region corresponding to the device region on the back side, and a ring-shaped reinforcing part surrounding the device region and the concave part on the outer peripheral part. The device region is a region in which a device is formed in each of a plurality of regions partitioned by a plurality of predetermined dividing lines arranged in a grid shape in a manner of intersecting with each other. The wafer processing method includes the following steps: a cutting step of dividing the device region into a plurality of device chips, and forming a cutting groove in the reinforcing part; a dividing step for dividing the reinforcing part by using the cutting groove as a starting point; and a removing step of ejecting a fluid toward the reinforcing part from a predetermined ejection position outside the wafer, so as to scatter the divided reinforcing part toward a side opposite to the ejection position for removal.

Description

晶圓的加工方法Wafer processing method

本發明是關於一種晶圓的加工方法。The present invention relates to a method for processing wafers.

在器件晶片的製造步驟中，會使用在正面側具備器件區域之晶圓，前述器件區域是在被配置排列成格子狀的複數條分割預定線(切割道)所區劃出之複數個區域中各自形成有器件之區域。藉由沿著分割預定線分割此晶圓，可獲得各自具備器件的複數個器件晶片。器件晶片可組入到行動電話、個人電腦等的各種電子機器。In the manufacturing process of the device wafer, a wafer having a device region on the front side is used, and the device region is each of a plurality of regions demarcated by a plurality of planned dividing lines (dicing lines) arranged in a lattice shape. A region where the device is formed. By dividing this wafer along the dividing line, a plurality of device wafers each including a device can be obtained. Device chips can be incorporated into various electronic devices such as mobile phones and personal computers.

近年來，隨著電子機器的小型化，對器件晶片越來越要求薄型化。於是，有在晶圓的分割前施行將晶圓薄化之處理的作法。在晶圓的薄化中可使用具備工作夾台與磨削單元之磨削裝置，前述工作夾台會保持被加工物，前述磨削單元供具有複數個磨削磨石的磨削輪裝設。藉由工作夾台保持晶圓，並一面使工作夾台與磨削輪各自旋轉一面使磨削磨石接觸於晶圓的背面側，可將晶圓磨削、薄化。In recent years, with the miniaturization of electronic equipment, there has been an increasing demand for thinning of device wafers. Therefore, there is a method of performing a process of thinning the wafer before the division of the wafer. For wafer thinning, a grinding device including a work chuck and a grinding unit can be used. The work chuck holds the workpiece, and the grinding unit is provided with a grinding wheel having a plurality of grinding stones. . The wafer can be ground and thinned by holding the wafer by the work chuck, and by rotating the work chuck and the grinding wheel respectively, while bringing the grinding stone into contact with the back side of the wafer.

若將晶圓磨削並薄化，晶圓的剛性會降低，且在磨削後之晶圓的操作處理(搬送等)時晶圓會變得容易破損。於是，已有以下之手法被提出：僅磨削晶圓的背面側當中和器件區域重疊的區域來進行薄化(參照專利文獻1)。若採用此手法，一方面晶圓的中央部會被薄化而形成凹部，另一方面晶圓的外周部未被薄化而維持為較厚的狀態，且作為環狀的補強部而殘留。藉此，可抑制磨削後之晶圓的剛性的降低。When the wafer is ground and thinned, the rigidity of the wafer is reduced, and the wafer is easily damaged during handling (transfer, etc.) of the wafer after grinding. Therefore, there has been proposed a method for thinning only the area overlapping the device area on the back side of the wafer for thinning (see Patent Document 1). According to this method, the central portion of the wafer is thinned to form a concave portion, while the outer peripheral portion of the wafer is not thinned and remains thick and remains as an annular reinforcing portion. Thereby, the reduction of the rigidity of the wafer after grinding can be suppressed.

已薄化之晶圓可使用以環狀的切削刀片來切削被加工物之切削裝置等，而最終被分割成複數個器件晶片。此時，晶圓會在將殘留於外周部之環狀補強部去除之後，沿著分割預定線被切斷。例如在專利文獻2中揭示有以下手法：以切削刀片環狀地切削晶圓的外周部而將器件區域與補強部(環狀凸部)分離後，藉由具備複數個爪之爪組合件將補強部舉起而去除。 先前技術文獻 專利文獻 The thinned wafer can be finally divided into a plurality of device wafers by using a cutting device or the like that cuts a workpiece with a ring-shaped cutting blade. At this time, the wafer is cut along the planned dividing line after removing the annular reinforcing portion remaining on the outer peripheral portion. For example, Patent Document 2 discloses a method of cutting the outer peripheral portion of the wafer annularly with a cutting insert to separate the device region from the reinforcing portion (annular convex portion), and then using a claw assembly including a plurality of claws to cut the outer peripheral portion of the wafer. The reinforcement is lifted up and removed. prior art literature Patent Literature

專利文獻1：日本特開2007-19379號公報 專利文獻2：日本特開2011-61137號公報 Patent Document 1: Japanese Patent Laid-Open No. 2007-19379 Patent Document 2: Japanese Patent Laid-Open No. 2011-61137

發明欲解決之課題The problem to be solved by the invention

如上述，殘留於晶圓的外周部之環狀的補強部，會在晶圓的加工程序中從晶圓分離並去除。然而，於剛將補強部從晶圓分離後，補強部會接近於器件區域而配置成：包圍已薄化且剛性已降低之狀態的晶圓的中央部(器件區域)。因此，會有以下疑慮：去除補強部時，環狀的補強部不小心接觸到器件區域而使器件區域損傷。As described above, the annular reinforcing portion remaining on the outer peripheral portion of the wafer is separated and removed from the wafer during the wafer processing process. However, immediately after the reinforcing portion is separated from the wafer, the reinforcing portion is arranged close to the device region so as to surround the central portion (device region) of the wafer in a state where the wafer has been thinned and its rigidity has been reduced. Therefore, when removing the reinforcing portion, there is a fear that the annular reinforcing portion accidentally contacts the device region and damages the device region.

從而，為了適當地去除補強部，以下作業會變得必要：以不使補強部干涉到器件區域的方式謹慎地保持補強部，並且以不產生補強部的搖晃或錯位的方式來將補強部舉起。其結果，使用於補強部的去除之機構(爪組合件等)的構造會複雜化且成本會增加。又，補強部的去除所需要的作業時間會變長，且作業效率會降低。Therefore, in order to properly remove the reinforcing portion, it becomes necessary to hold the reinforcing portion carefully so that the reinforcing portion does not interfere with the device region, and to lift the reinforcing portion so as not to cause shaking or displacement of the reinforcing portion. rise. As a result, the structure of the mechanism (claw assembly etc.) used for the removal of a reinforcement part will become complicated and cost will increase. Moreover, the work time required for the removal of a reinforcement part becomes long, and a work efficiency falls.

本發明是有鑒於所述之問題而作成的發明，其目的在於提供一種可簡便地去除殘留於晶圓的外周部之補強部的晶圓的加工方法。 用以解決課題之手段 The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a wafer processing method that can easily remove the reinforcing portion remaining on the outer peripheral portion of the wafer. means of solving problems

根據本發明的一個態樣，可提供一種晶圓的加工方法，為對晶圓進行加工之方法，前述晶圓在正面側具備器件區域，在背面側具備形成在和該器件區域對應之區域的凹部，在外周部具備包圍該器件區域以及該凹部之環狀的補強部，前述器件區域是在被以相互交叉的方式配置排列成格子狀之複數條分割預定線所區劃出的複數個區域中各自形成有器件之區域，前述晶圓的加工方法具備以下步驟： 膠帶貼附步驟，在該晶圓的背面側沿著該凹部以及該補強部貼附黏著膠帶； 保持步驟，藉由第1工作夾台隔著該黏著膠帶來保持該凹部的底面； 切削步驟，藉由以切削刀片沿著該分割預定線來切削該晶圓，而將該器件區域分割成複數個器件晶片，並且在該補強部形成切削溝； 分割步驟，藉由對該補強部賦與外力，而以該切削溝為起點來分割該補強部；及 去除步驟，藉由從位於該晶圓的外側之預定的噴射位置朝向該補強部噴射流體，而使經分割之該補強部朝向和該噴射位置為相反之側飛散來去除。 According to an aspect of the present invention, a method for processing a wafer can be provided. In order to process a wafer, the wafer includes a device region on the front side, and a wafer on the back side that is formed in a region corresponding to the device region. The concave portion is provided with a ring-shaped reinforcing portion surrounding the device region and the concave portion on the outer peripheral portion, and the device region is a plurality of regions divided by a plurality of predetermined dividing lines arranged in a lattice shape so as to intersect with each other. Each of the regions where devices are formed, the aforementioned wafer processing method includes the following steps: an adhesive tape attaching step of attaching an adhesive tape along the concave portion and the reinforcing portion on the back side of the wafer; The holding step is to hold the bottom surface of the concave portion through the adhesive tape by the first work clamp; The cutting step includes cutting the wafer along the predetermined dividing line with a cutting blade to divide the device region into a plurality of device wafers, and forming cutting grooves in the reinforcing portion; a dividing step, by applying an external force to the reinforcing part, and dividing the reinforcing part with the cutting groove as a starting point; and In the removing step, a fluid is ejected toward the reinforcement portion from a predetermined ejection position located on the outer side of the wafer, and the segmented reinforcement portion is scattered and removed toward the opposite side to the ejection position.

再者，較佳的是，在該去除步驟中，是沿著該晶圓的外周緣的切線方向來噴射該流體。又，較佳的是，在該分割步驟中，是在已藉由在和該晶圓的該補強部對應之位置具有凹凸之第2工作夾台來支撐該晶圓的狀態下，藉由該第2工作夾台來吸引該黏著膠帶，藉此讓該黏著膠帶沿著該凹凸配置來分割該補強部。又，較佳的是，在該去除步驟中，是在將噴嘴與回收機構配置成夾著該晶圓的該補強部的狀態下，從該噴嘴朝向該補強部噴射該流體，藉此使經分割之該補強部朝向該回收機構飛散而藉由該回收機構來回收。 發明效果 Furthermore, preferably, in the removing step, the fluid is sprayed along the tangential direction of the outer periphery of the wafer. Furthermore, preferably, in the dividing step, in a state where the wafer is already supported by a second table having concavities and convexities at positions corresponding to the reinforcing portions of the wafer, the wafer is supported by the The second work table sucks the adhesive tape, thereby dividing the reinforcing portion by disposing the adhesive tape along the unevenness. Furthermore, it is preferable that in the removing step, the fluid is ejected from the nozzle toward the reinforcing portion in a state where the nozzle and the recovery mechanism are arranged so as to sandwich the reinforcing portion of the wafer, thereby allowing the passing through The divided reinforcing portion scatters toward the collection mechanism and is collected by the collection mechanism. Invention effect

在本發明的一個態樣之晶圓的加工方法中，是在切削步驟中將器件區域分割成複數個器件晶片，並且在補強部形成切削溝。並且，在分割步驟中，對補強部賦與外力，而以切削溝作為起點來分割補強部。藉此，變得可藉由對經分割之補強部噴射流體這種簡便的方法，而容易地從晶圓去除補強部。In the wafer processing method of one aspect of the present invention, in the cutting step, the device region is divided into a plurality of device wafers, and cutting grooves are formed in the reinforcement portion. In addition, in the dividing step, an external force is applied to the reinforcing portion, and the reinforcing portion is divided with the cutting groove as a starting point. Thereby, it becomes possible to easily remove the reinforcement portion from the wafer by a simple method of spraying the fluid to the divided reinforcement portion.

又，在本發明的一態樣之晶圓的加工方法中，藉由從位於晶圓的外側之預定的噴射位置朝向補強部噴射流體，而使經分割之補強部(複數個碎片)朝向和噴射位置為相反之側飛散。藉此，可以防止碎片從晶圓朝隨意的方向飛散之情形，且使碎片的回收變得較容易。In addition, in the wafer processing method of one aspect of the present invention, by ejecting the fluid toward the reinforcement portion from a predetermined ejection position located outside the wafer, the divided reinforcement portion (plurality of fragments) is directed toward and The spray position is the opposite side to scatter. Thereby, it is possible to prevent the debris from scattering in random directions from the wafer, and to facilitate the recovery of the debris.

用以實施發明之形態Form for carrying out the invention

以下，參照附加圖式來說明本發明的一個態樣的實施形態。首先，說明被本實施形態之晶圓的加工方法所加工之晶圓的構成例。圖1(A)是顯示晶圓11的正面側的立體圖，圖1(B)是顯示晶圓11的背面側的立體圖。Hereinafter, an embodiment of one aspect of the present invention will be described with reference to the accompanying drawings. First, a configuration example of a wafer processed by the wafer processing method of the present embodiment will be described. FIG. 1(A) is a perspective view showing the front side of the wafer 11 , and FIG. 1(B) is a perspective view showing the back side of the wafer 11 .

晶圓11是以例如矽等的半導體所構成之圓盤狀的基板，並具備互相大致平行的正面11a以及背面11b。晶圓11被以互相交叉的方式配置排列成格子狀之複數條分割預定線(切割道)13區劃成複數個矩形狀的區域。又，晶圓11的正面11a側當中於被分割預定線13所區劃出之區域各自形成有IC(積體電路，Integrated Circuit)、LSI(大型積體電路，Large Scale Integration)、LED(發光二極體，Light Emitting Diode)、MEMS(微機電系統，Micro Electro Mechanical Systems)等器件15。The wafer 11 is a disk-shaped substrate made of a semiconductor such as silicon, for example, and includes a front surface 11a and a back surface 11b that are substantially parallel to each other. The wafer 11 is divided into a plurality of rectangular regions by a plurality of planned dividing lines (dicing lanes) 13 arranged in a grid shape so as to intersect with each other. In addition, IC (Integrated Circuit), LSI (Large Scale Integration), and LED (Light Emitting Two) are formed on the front surface 11 a side of the wafer 11 in the regions demarcated by the planned dicing lines 13 , respectively. Polar body, Light Emitting Diode), MEMS (Micro Electro Mechanical Systems, Micro Electro Mechanical Systems) and other devices 15.

晶圓11在正面11a側具備形成有複數個器件15之大致圓形的器件區域17a、及包圍器件區域17a之環狀的外周剩餘區域17b。外周剩餘區域17b相當於正面11a之包含外周緣的預定的寬度(例如2mm左右)之環狀的區域。於圖1(A)中以二點鏈線表示器件區域17a與外周剩餘區域17b之交界。The wafer 11 includes, on the front side 11a, a substantially circular device region 17a in which a plurality of devices 15 are formed, and a ring-shaped outer peripheral remaining region 17b surrounding the device region 17a. The outer peripheral remaining area 17b corresponds to an annular area having a predetermined width (for example, about 2 mm) including the outer peripheral edge of the front surface 11a. In FIG. 1(A), the boundary between the device region 17a and the peripheral remaining region 17b is indicated by a two-dot chain line.

再者，對晶圓11的材質、形狀、構造、大小等並無限制。例如晶圓11亦可為以矽以外的半導體(砷化鎵(GaAs)、磷化銦(InP)、氮化鎵(GaN)、碳化矽(SiC)等)、玻璃、陶瓷、樹脂、金屬等所構成之基板。又，對於器件15的種類、數量、形狀、構造、大小、配置等也無限制。Furthermore, the material, shape, structure, size, etc. of the wafer 11 are not limited. For example, the wafer 11 may be a semiconductor other than silicon (gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), silicon carbide (SiC), etc.), glass, ceramics, resin, metal, etc. constituted substrate. Also, there are no limitations on the type, number, shape, structure, size, arrangement, and the like of the devices 15 .

藉由沿著分割預定線13將晶圓11分割成格子狀，可製造各自具備器件15之複數個器件晶片。又，變得可藉由在分割前的晶圓11施行薄化處理，而得到經薄型化之器件晶片。By dividing the wafer 11 into a lattice shape along the line 13 to be divided, a plurality of device wafers each including the device 15 can be manufactured. Furthermore, it becomes possible to obtain a thinned device wafer by performing a thinning process on the wafer 11 before division.

在晶圓11的薄化中，可使用例如磨削裝置。磨削裝置具備保持晶圓11之工作夾台(保持工作台)、及對晶圓11進行磨削之磨削單元。在磨削單元裝設有環狀的磨削輪，前述磨削輪包含複數個磨削磨石。藉由以工作夾台保持晶圓11，並一面使工作夾台與磨削輪各自旋轉一面使磨削磨石接觸於晶圓11的背面11b側，可磨削晶圓11的背面11b側，而將晶圓11薄化。In the thinning of the wafer 11, for example, a grinding apparatus can be used. The grinding apparatus includes a work chuck (holding table) for holding the wafer 11 , and a grinding unit for grinding the wafer 11 . An annular grinding wheel is installed in the grinding unit, and the grinding wheel includes a plurality of grinding stones. The backside 11b side of the wafer 11 can be ground by holding the wafer 11 by the work chuck, and by rotating the work chuck and the grinding wheel, respectively, while bringing the grinding stone into contact with the backside 11b side of the wafer 11 , And the wafer 11 is thinned.

再者，若磨削晶圓11的背面11b側的整體，晶圓11的整體會被薄化而使晶圓11的剛性降低，且在磨削後之晶圓11的操作處理(搬送等)時，晶圓11會變得容易破損。因此，會有僅對晶圓11的背面11b側的中央部施行薄化處理(磨削加工)之作法。Furthermore, if the whole of the back surface 11b side of the wafer 11 is ground, the whole of the wafer 11 will be thinned and the rigidity of the wafer 11 will be lowered, and the handling (transfer, etc.) of the wafer 11 after the grinding will be performed. , the wafer 11 may be easily damaged. Therefore, there is a method of performing thinning processing (grinding processing) only on the central portion on the back surface 11b side of the wafer 11 .

例如，如圖1(B)所示，僅晶圓11的中央部被磨削、薄化。其結果，可在晶圓11的背面11b形成圓形的凹部(溝)19。再者，凹部19設置在和器件區域17a對應之位置。例如，凹部19的大小(直徑)是設定成和器件區域17a的大小(直徑)大致相同，且凹部19形成為和複數個器件15重疊。For example, as shown in FIG. 1(B) , only the central portion of the wafer 11 is ground and thinned. As a result, a circular concave portion (groove) 19 can be formed on the back surface 11 b of the wafer 11 . Furthermore, the concave portion 19 is provided at a position corresponding to the device region 17a. For example, the size (diameter) of the concave portion 19 is set to be substantially the same as the size (diameter) of the device region 17 a, and the concave portion 19 is formed so as to overlap the plurality of devices 15 .

凹部19包含大致和晶圓11的正面11a以及背面11b平行之底面19a、及大致和底面19a垂直且連接於底面19a以及背面11b之環狀的側面(內壁)19b。又，在晶圓11的外周部殘留有相當於未被施行薄化處理(磨削加工)之區域的環狀的補強部(凸部)21。補強部21包含外周剩餘區域17b，且包圍有器件區域17a與凹部19。The concave portion 19 includes a bottom surface 19a substantially parallel to the front surface 11a and the back surface 11b of the wafer 11, and an annular side surface (inner wall) 19b substantially perpendicular to the bottom surface 19a and connected to the bottom surface 19a and the back surface 11b. In addition, an annular reinforcing portion (convex portion) 21 corresponding to a region not subjected to a thinning process (grinding process) remains on the outer peripheral portion of the wafer 11 . The reinforcement portion 21 includes the remaining peripheral region 17b, and surrounds the device region 17a and the concave portion 19 .

若僅將晶圓11的中央部薄化，晶圓11的外周部(補強部21)會維持在較厚的狀態。藉此，可抑制晶圓11的剛性的降低，且變得難以產生晶圓11的破損等。亦即，補強部21作為補強晶圓11的補強區域而發揮功能。If only the central portion of the wafer 11 is thinned, the outer peripheral portion (reinforcing portion 21 ) of the wafer 11 is maintained in a thick state. Thereby, the reduction in rigidity of the wafer 11 can be suppressed, and it becomes difficult for the wafer 11 to be damaged or the like. That is, the reinforcing portion 21 functions as a reinforcing region for reinforcing the wafer 11 .

接著，說明用於將上述之晶圓11分割成複數個器件晶片之晶圓的加工方法的具體例。在本實施形態中，首先是在晶圓11的背面11b側貼附黏著膠帶(膠帶貼附步驟)。圖2(A)是顯示貼附有黏著膠帶23之晶圓11的立體圖，圖2(B)是顯示貼附有黏著膠帶23之晶圓11的剖面圖。Next, a specific example of a wafer processing method for dividing the above-described wafer 11 into a plurality of device wafers will be described. In this embodiment, first, the adhesive tape is attached to the back surface 11b side of the wafer 11 (tape attaching step). FIG. 2(A) is a perspective view showing the wafer 11 to which the adhesive tape 23 is attached, and FIG. 2(B) is a cross-sectional view showing the wafer 11 to which the adhesive tape 23 is attached.

可在晶圓11的背面11b側貼附可覆蓋晶圓11的背面11b側的整體之大小的黏著膠帶23。例如，可將直徑比晶圓11更大的圓形的黏著膠帶23貼附成覆蓋晶圓11的背面11b側。An adhesive tape 23 having a size that can cover the entire back surface 11 b side of the wafer 11 can be attached to the back surface 11 b of the wafer 11 . For example, a circular adhesive tape 23 having a larger diameter than the wafer 11 may be attached so as to cover the back surface 11 b side of the wafer 11 .

可以使用包含圓形的基材、及設置於基材上之黏著層(糊層)的柔軟的薄膜來作為黏著膠帶23。例如，基材是以聚烯烴、聚氯乙烯、聚對苯二甲酸乙二酯等之樹脂所構成，黏著層是以環氧系、丙烯酸系、或橡膠系之接著劑等所構成。又，也可以使用會因紫外線的照射而硬化之紫外線硬化型的樹脂來作為黏著層。As the adhesive tape 23, a flexible film including a circular base material and an adhesive layer (paste layer) provided on the base material can be used. For example, the base material is composed of resin such as polyolefin, polyvinyl chloride, polyethylene terephthalate, etc., and the adhesive layer is composed of epoxy-based, acrylic-based, or rubber-based adhesives. Moreover, an ultraviolet curable resin which hardens|cures by irradiation of an ultraviolet-ray can also be used as an adhesive layer.

黏著膠帶23是沿著晶圓11的背面11b側的輪廓來貼附。亦即，如圖2(B)所示，將黏著膠帶23沿著(順應於)凹部19的底面19a以及側面19b、與補強部21的背面(下表面)來貼附。再者，在圖2(B)中雖然所顯示的是將黏著膠帶23貼附成密合於底面19a以及側面19b的例子，但是在黏著膠帶23與底面19a的外周部之間或黏著膠帶23與側面19b之間亦可存在有些微的間隙。The adhesive tape 23 is attached along the contour on the back surface 11 b side of the wafer 11 . That is, as shown in FIG. 2(B) , the adhesive tape 23 is attached (fitted to) the bottom surface 19a and the side surface 19b of the concave portion 19 and the back surface (lower surface) of the reinforcing portion 21 . 2(B) shows an example in which the adhesive tape 23 is adhered to the bottom surface 19a and the side surface 19b so as to be in close contact with the bottom surface 19a and the side surface 19b. There may also be a slight gap with the side surface 19b.

黏著膠帶23的外周部貼附有以SUS(不鏽鋼)等金屬所構成之環狀的框架25。在框架25的中央部設置有可容置晶圓11之圓形的開口25a。晶圓11是以配置於開口25a的內側之狀態，透過黏著膠帶23被框架25所支撐。藉此，可構成晶圓11、黏著膠帶23以及框架25一體化之框架單元(工件組)。A ring-shaped frame 25 made of metal such as SUS (stainless steel) is attached to the outer peripheral portion of the adhesive tape 23 . A circular opening 25a for accommodating the wafer 11 is provided in the central portion of the frame 25 . The wafer 11 is placed inside the opening 25 a and supported by the frame 25 through the adhesive tape 23 . Thereby, a frame unit (workpiece group) in which the wafer 11, the adhesive tape 23 and the frame 25 are integrated can be formed.

貼附有黏著膠帶23之晶圓11是藉由切削裝置來進行切削。圖3是顯示切削裝置2的立體圖。在圖3中，X軸方向(加工進給方向、第1水平方向)與Y軸方向(分度進給方向、第2水平方向)是相互垂直之方向。又，Z軸方向(鉛直方向、上下方向、高度方向)是和X軸方向以及Y軸方向垂直之方向。切削裝置2具備保持晶圓11之工作夾台(保持工作台)4、及對被工作夾台4所保持之晶圓11進行切削之切削單元12。The wafer 11 to which the adhesive tape 23 is attached is cut by a cutting device. FIG. 3 is a perspective view showing the cutting device 2 . In FIG. 3, the X-axis direction (processing feed direction, the first horizontal direction) and the Y-axis direction (the indexing feed direction, the second horizontal direction) are mutually perpendicular directions. In addition, the Z-axis direction (vertical direction, vertical direction, height direction) is a direction perpendicular to the X-axis direction and the Y-axis direction. The cutting device 2 includes a work chuck (holding table) 4 that holds the wafer 11 , and a cutting unit 12 that cuts the wafer 11 held by the work chuck 4 .

工作夾台4的上表面是形成為和X軸方向以及Y軸方向大致平行之平坦面，且構成有保持晶圓11之圓形的保持面4a(參照圖4)。又，工作夾台4已和移動機構(未圖示)與旋轉驅動源(未圖示)連結，前述移動機構是使工作夾台4沿著X軸方向移動之滾珠螺桿式的機構，前述旋轉驅動源是使工作夾台4以繞著和Z軸方向大致平行之旋轉軸的方式旋轉之馬達等的驅動源。The upper surface of the table 4 is a flat surface formed substantially parallel to the X-axis direction and the Y-axis direction, and has a circular holding surface 4a (see FIG. 4 ) for holding the wafer 11 . In addition, the table 4 is connected to a moving mechanism (not shown) and a rotational drive source (not shown). The moving mechanism is a ball screw type mechanism that moves the table 4 in the X-axis direction. The drive source is a drive source such as a motor that rotates the table 4 about a rotation axis substantially parallel to the Z-axis direction.

在工作夾台4的上方配置有切削晶圓11之切削單元12。切削單元12具備中空之圓筒狀的殼體14，在殼體14容置有沿著Y軸方向配置之圓筒狀的主軸(未圖示)。主軸的前端部(一端部)露出於殼體14的外部，且在主軸的基端部(另一端部)連結有馬達等的旋轉驅動源(未圖示)。A cutting unit 12 for cutting the wafer 11 is arranged above the table 4 . The cutting unit 12 includes a hollow cylindrical casing 14 , and a cylindrical main shaft (not shown) arranged along the Y-axis direction is accommodated in the casing 14 . A front end portion (one end portion) of the main shaft is exposed to the outside of the housing 14, and a rotational drive source (not shown) such as a motor is connected to a proximal end portion (the other end portion) of the main shaft.

可在主軸的前端部裝設環狀的切削刀片16。切削刀片16藉由從旋轉驅動源透過主軸所傳達之動力，而繞著大致平行於Y軸方向之旋轉軸旋轉。An annular cutting insert 16 may be attached to the front end of the main shaft. The cutting insert 16 is rotated about a rotation axis substantially parallel to the Y-axis direction by the power transmitted from the rotational drive source through the main shaft.

可使用例如輪轂型的切削刀片(輪轂型刀片)來作為切削刀片16。輪轂型刀片是使以金屬等所構成之環狀的基台、與沿著基台的外周緣所形成之環狀的切刃成為一體來構成。輪轂型刀片的切刃是藉由電鑄磨石所構成，前述電鑄磨石是以鑽石等所構成之磨粒被鎳鍍敷層等之結合材所固定而成。又，也可以使用墊圈型的切削刀片(墊圈型刀片)來作為切削刀片16。墊圈型刀片是藉由環狀的切刃所構成，前述環狀的切刃是以鑽石等所構成之磨粒被以金屬、陶瓷、樹脂等所構成之結合材所固定而成。As the cutting insert 16, for example, a hub type cutting insert (hub type insert) can be used. The hub-type insert is formed by integrating an annular base made of metal or the like and an annular cutting edge formed along the outer peripheral edge of the base. The cutting edge of the hub-type blade is formed of an electroformed grindstone, and the above-mentioned electroformed grindstone is formed by fixing abrasive grains made of diamonds or the like with a bonding material such as a nickel plating layer. Also, a washer-type cutting insert (washer-type insert) may be used as the cutting insert 16 . The washer-type blade is composed of an annular cutting edge, and the annular cutting edge is formed of abrasive grains composed of diamonds and the like fixed by a bonding material composed of metal, ceramics, resin, and the like.

已裝設於主軸的前端部之切削刀片16會被固定於殼體14之刀片蓋18所覆蓋。刀片蓋18具備連接於供給純水等之液體(切削液)的管件(未圖示)之連接部20、及連接於連接部20且各自配置於切削刀片16的兩面側(正面側、背面側)的一對噴嘴22。於一對噴嘴22分別形成有朝向切削刀片16開口的噴射口(未圖示)。The cutting insert 16 mounted on the front end of the main shaft is covered by the insert cover 18 fixed to the housing 14 . The insert cover 18 includes a connecting portion 20 connected to a pipe (not shown) for supplying a liquid (cutting fluid) such as pure water, and a connecting portion 20 that is connected to the connecting portion 20 and arranged on both surface sides (the front side and the back side) of the cutting insert 16 , respectively. ) of a pair of nozzles 22. An injection port (not shown) that opens toward the cutting insert 16 is formed in each of the pair of nozzles 22 .

在以切削刀片16切削晶圓11之時，會對連接部20供給切削液，並從一對噴嘴22的噴射口朝向切削刀片16的兩面(正面、背面)噴射切削液。藉此，可冷卻晶圓11以及切削刀片16，並且將因切削加工所產生之屑(切削屑)沖洗掉。When the wafer 11 is cut with the cutting insert 16 , the cutting fluid is supplied to the connecting portion 20 , and the cutting fluid is sprayed toward both surfaces (front and back) of the cutting insert 16 from the ejection ports of the pair of nozzles 22 . Thereby, the wafer 11 and the cutting insert 16 can be cooled, and the chips (chipping chips) generated by the cutting process can be washed away.

在切削單元12連結有使切削單元12移動之滾珠螺桿式的移動機構(未圖示)。此移動機構使切削單元12沿著Y軸方向移動，並且使其沿著Z軸方向升降。A ball screw type moving mechanism (not shown) for moving the cutting unit 12 is connected to the cutting unit 12 . This moving mechanism moves the cutting unit 12 in the Y-axis direction, and raises and lowers it in the Z-axis direction.

在切削晶圓11時，首先是藉由工作夾台4(第1工作夾台)來保持晶圓11(保持步驟)。圖4是顯示被工作夾台4所保持之晶圓11的剖面圖。When the wafer 11 is cut, the wafer 11 is first held by the table 4 (first table) (holding step). FIG. 4 is a cross-sectional view showing the wafer 11 held by the work chuck 4 .

工作夾台4具備以金屬、玻璃、陶瓷、樹脂等所構成之圓柱狀的框體(本體部)6。在框體6的上表面6a側形成有在平面視角下為圓形的凹部(溝)6b，且在凹部6b嵌入有圓盤狀的保持構件8。保持構件8是由多孔陶瓷等之多孔質材料所形成的構件，於其內部包含有從保持構件8的上表面連通到下表面之空孔(吸引路)。The table 4 includes a cylindrical frame body (main body) 6 made of metal, glass, ceramics, resin, or the like. A concave portion (groove) 6b that is circular in plan view is formed on the upper surface 6a side of the frame body 6, and a disk-shaped holding member 8 is fitted into the concave portion 6b. The holding member 8 is a member formed of a porous material such as porous ceramics, and includes holes (suction passages) communicating from the upper surface to the lower surface of the holding member 8 in the inside thereof.

框體6的上表面6a與保持構件8的上表面8a被配置在大致相同平面上，而構成工作夾台4的保持面4a。又，保持構件8的上表面8a構成有吸引晶圓11之圓形的吸引面。並且，保持面4a透過形成於保持構件8、框體6的內部之流路(未圖示)、閥(未圖示)等而連接到噴射器等之吸引源(未圖示)。The upper surface 6a of the frame body 6 and the upper surface 8a of the holding member 8 are arranged on substantially the same plane, and constitute the holding surface 4a of the table 4 . In addition, the upper surface 8 a of the holding member 8 has a circular suction surface for attracting the wafer 11 . The holding surface 4a is connected to a suction source (not shown) such as an ejector through a flow path (not shown), a valve (not shown), etc. formed in the holding member 8 and the casing 6 .

晶圓11是以正面11a側朝上方露出的方式配置在工作夾台4上。再者，工作夾台4構成為可用保持面4a來保持晶圓11的凹部19的底面19a。具體而言，保持面4a的直徑會比凹部19的直徑更小，而可將工作夾台4的保持面4a側嵌入到凹部19。藉此，可隔著黏著膠帶23藉由保持面4a來支撐凹部19的底面19a。The wafer 11 is arranged on the table 4 so that the front surface 11a side is exposed upward. In addition, the table 4 is configured to hold the bottom surface 19a of the concave portion 19 of the wafer 11 with the holding surface 4a. Specifically, the diameter of the holding surface 4 a is smaller than the diameter of the concave portion 19 , and the holding surface 4 a of the table 4 can be fitted into the concave portion 19 . Thereby, the bottom surface 19a of the recessed part 19 can be supported by the holding surface 4a with the adhesive tape 23 interposed therebetween.

又，在工作夾台4的周圍設置有可保持並固定框架25之複數個夾具10。當將晶圓11配置於工作夾台4上之後，可藉由複數個夾具10來固定框架25。In addition, a plurality of jigs 10 capable of holding and fixing the frame 25 are provided around the work jig 4 . After the wafer 11 is placed on the work chuck 4 , the frame 25 can be fixed by a plurality of clamps 10 .

若在已將晶圓11配置於工作夾台4上的狀態下使吸引源的吸引力(負壓)作用於保持面4a，黏著膠帶23當中貼附於凹部19的底面19a之區域會被保持面4a吸引。藉此，凹部19的底面19a會隔著黏著膠帶23被工作夾台4所吸引保持。When the suction force (negative pressure) of the suction source acts on the holding surface 4a in the state where the wafer 11 is placed on the table 4, the area of the adhesive tape 23 that is attached to the bottom surface 19a of the recess 19 is held Face 4a attracts. Thereby, the bottom surface 19a of the recessed part 19 is attracted and held by the work chuck 4 via the adhesive tape 23 .

其次，藉由切削刀片16沿著分割預定線13(參照圖3等)來切削晶圓11(切削步驟)。在切削步驟中，是沿著和第1方向平行的分割預定線13、及和第1方向交叉之第2方向平行的分割預定線13來切削晶圓11。Next, the wafer 11 is cut along the planned dividing line 13 (see FIG. 3 and the like) by the cutting blade 16 (cutting step). In the cutting step, the wafer 11 is cut along the planned dividing line 13 parallel to the first direction and the planned dividing line 13 parallel to the second direction intersecting the first direction.

圖5(A)是顯示沿著第1方向被切削之晶圓11的剖面圖。首先，使工作夾台4旋轉，並將和第1方向平行的一條分割預定線13的長度方向對齊於X軸方向。又，將切削單元12的Y軸方向上的位置調整成：切削刀片16被配置在一條分割預定線13的延長線上。FIG. 5(A) is a cross-sectional view showing the wafer 11 cut along the first direction. First, the table 4 is rotated to align the longitudinal direction of one planned dividing line 13 parallel to the first direction with the X-axis direction. In addition, the position of the cutting unit 12 in the Y-axis direction is adjusted so that the cutting insert 16 is arranged on an extension of one line to divide 13 .

此外，將切削單元12的高度調整成：切削刀片16的下端被配置在比凹部19的底面19a更下方。例如，可將切削刀片16的下端定位在比已貼附於凹部19的底面19a之黏著膠帶23的上表面更下方，且比保持面4a(黏著膠帶23的下表面)更上方。此時的晶圓11的正面11a與切削刀片16的下端的高度之差，相當於切削刀片16對晶圓11的切入深度。Further, the height of the cutting unit 12 is adjusted so that the lower end of the cutting insert 16 is arranged below the bottom surface 19 a of the recessed portion 19 . For example, the lower end of the cutting blade 16 may be positioned below the upper surface of the adhesive tape 23 attached to the bottom surface 19a of the recess 19 and above the holding surface 4a (the lower surface of the adhesive tape 23). The difference in height between the front surface 11 a of the wafer 11 and the lower end of the cutting insert 16 at this time corresponds to the cutting depth of the cutting insert 16 into the wafer 11 .

並且，一邊旋轉切削刀片16，一邊使工作夾台4沿著X軸方向移動。藉此，工作夾台4與切削刀片16會沿著X軸方向相對地移動(加工進給)，且切削刀片16會沿著一條分割預定線13切入晶圓11的正面11a側。Then, the table 4 is moved in the X-axis direction while the cutting insert 16 is rotated. Thereby, the table 4 and the cutting insert 16 are relatively moved along the X-axis direction (processing feed), and the cutting insert 16 is cut into the front surface 11 a side of the wafer 11 along a line 13 to be divided.

此時的切削刀片16的切入深度比晶圓11的中央部(器件區域17a)的厚度更大，且比晶圓11的外周部(補強部21)的厚度更小。因此，可在晶圓11的器件區域17a沿著一條分割預定線13形成從正面11a到達底面19a之切口(刀痕)。另一方面，可在晶圓11的補強部21沿著一條分割預定線13形成和切削刀片16的切入深度對應之深度的切削溝11c。At this time, the cutting depth of the cutting insert 16 is larger than the thickness of the central portion (device region 17 a ) of the wafer 11 and smaller than the thickness of the outer peripheral portion (reinforcing portion 21 ) of the wafer 11 . Therefore, a cut (knife mark) from the front surface 11a to the bottom surface 19a can be formed in the device region 17a of the wafer 11 along one line 13 to be divided. On the other hand, a cutting groove 11 c having a depth corresponding to the cutting depth of the cutting insert 16 may be formed in the reinforcing portion 21 of the wafer 11 along one planned dividing line 13 .

之後，使切削刀片16在Y軸方向上移動分割預定線13的間隔量(分度進給)，而沿著其他的分割預定線13來切削晶圓11。藉由重複此工序，即可沿著和第1方向平行的全部的分割預定線13來切削晶圓11。After that, the cutting insert 16 is moved in the Y-axis direction by an interval of the planned dividing line 13 (indexing feed), and the wafer 11 is cut along the other planned dividing line 13 . By repeating this process, the wafer 11 can be cut along all the planned dividing lines 13 parallel to the first direction.

接著，使工作夾台4旋轉90°，將和第2方向平行的分割預定線13的長度方向對齊於X軸方向。然後，藉由同樣的工序，沿著和第2方向平行的全部的分割預定線13來切削晶圓11。圖5(B)是顯示沿著第2方向被切削之晶圓11的剖面圖。Next, the table 4 is rotated by 90°, and the longitudinal direction of the line to divide 13 parallel to the second direction is aligned with the X-axis direction. Then, by the same process, the wafer 11 is cut along all the planned dividing lines 13 parallel to the second direction. FIG. 5(B) is a cross-sectional view showing the wafer 11 cut along the second direction.

當沿著全部的分割預定線13切削晶圓11後，晶圓11的器件區域17a即沿著分割預定線13被分割，而獲得各自具備器件15之複數個器件晶片27(參照圖6)。又，於補強部21的上表面(正面)側會沿著分割預定線13而形成切削溝11c。When the wafer 11 is cut along all the planned dividing lines 13, the device regions 17a of the wafer 11 are divided along the planned dividing lines 13, and a plurality of device wafers 27 each including the devices 15 are obtained (see FIG. 6). Moreover, on the upper surface (front surface) side of the reinforcement part 21, the cutting groove 11c is formed along the dividing line 13.

其次，藉由對補強部21賦與外力，而以切削溝11c為起點來分割補強部21(分割步驟)。在本實施形態中，是藉由以第2工作夾台吸引黏著膠帶23，來對補強部21賦與外力。Next, by applying an external force to the reinforcing portion 21, the reinforcing portion 21 is divided with the cutting groove 11c as a starting point (dividing step). In the present embodiment, external force is applied to the reinforcing portion 21 by sucking the adhesive tape 23 with the second table.

圖6是顯示外力賦與單元30的立體圖。外力賦與單元30是對晶圓11賦與外力之機構，且可設置在切削裝置2(參照圖3)的內部或外部。外力賦與單元30具備保持晶圓11之工作夾台(保持工作台)32。FIG. 6 is a perspective view showing the external force imparting unit 30 . The external force imparting unit 30 is a mechanism for imparting an external force to the wafer 11 , and may be provided inside or outside the cutting device 2 (see FIG. 3 ). The external force imparting unit 30 includes a work chuck (holding table) 32 that holds the wafer 11 .

工作夾台32的上表面是構成保持晶圓11之圓形的保持面。又，在工作夾台32連結有馬達等之旋轉驅動源(未圖示)，前述旋轉驅動源使工作夾台32以繞著和鉛直方向大致平行的旋轉軸的方式旋轉。The upper surface of the table 32 is a circular holding surface for holding the wafer 11 . In addition, a rotary drive source (not shown) such as a motor is connected to the table 32, and the rotary drive source rotates the table 32 about a rotation axis substantially parallel to the vertical direction.

工作夾台32具備以金屬、玻璃、陶瓷、樹脂等所構成之圓柱狀的框體(本體部)34。在框體34的上表面34a側的中央部形成有在平面視角下圓形的凹部(溝)34b，且在凹部34b嵌入有圓盤狀的保持構件36。保持構件36是由多孔陶瓷等之多孔質材料所形成之構件，於其內部包含有從保持構件36的上表面連通到下表面之空孔(吸引路)。The table 32 includes a cylindrical frame body (main body portion) 34 made of metal, glass, ceramics, resin, or the like. A concave portion (groove) 34b that is circular in plan view is formed in the center portion on the upper surface 34a side of the frame body 34, and a disk-shaped holding member 36 is fitted into the concave portion 34b. The holding member 36 is a member formed of a porous material such as porous ceramics, and includes holes (suction passages) in the interior of the holding member 36 that communicate from the upper surface to the lower surface of the holding member 36 .

保持構件36的上表面構成有吸引保持晶圓11之圓形的吸引面36a。吸引面36a是配置在和框體34的上表面34a大致相同平面上。The upper surface of the holding member 36 is formed with a circular suction surface 36 a that attracts and holds the wafer 11 . The suction surface 36 a is disposed on substantially the same plane as the upper surface 34 a of the frame body 34 .

在工作夾台32當中和晶圓11的補強部21對應之位置設置有凹凸。例如，框體34形成為在將晶圓11配置於工作夾台32上時，上表面34a和補強部21重疊。又，在框體34的上表面34a側設有從上表面34a朝上方突出之複數個凸部(突起)38。再者，在圖6中雖然顯示有形成為長方體形的凸部38，但是對凸部38的形狀並無限制。Concavities and convexities are provided at positions corresponding to the reinforcing portions 21 of the wafers 11 in the work chuck 32 . For example, the frame body 34 is formed so that the upper surface 34 a and the reinforcing portion 21 overlap when the wafer 11 is placed on the table 32 . Moreover, a plurality of convex portions (protrusions) 38 protruding upward from the upper surface 34a are provided on the upper surface 34a side of the frame body 34 . In addition, although the convex part 38 formed in the rectangular parallelepiped shape is shown in FIG. 6, the shape of the convex part 38 is not limited.

複數個凸部38是沿著框體34的圓周方向大致等間隔地配置排列。並且，可藉由框體34的上表面34a與凸部38，而構成具有週期性的凹凸之環狀的區域。The plurality of convex portions 38 are arranged and arranged at substantially equal intervals along the circumferential direction of the frame body 34 . In addition, the upper surface 34a of the frame body 34 and the convex portion 38 can form an annular region having periodic concavities and convexities.

此外，在框體34的上表面34a側設置有在上表面34a開口之環狀的溝40a、40b。例如溝40a、40b在複數個凸部38的兩側(框體6的半徑方向上的外側與內側)呈同心圓狀地形成。又，溝40a與溝40b是透過沿著框體6的半徑方向而形成之複數條溝40c來互相連結。Further, on the upper surface 34a side of the frame body 34, annular grooves 40a and 40b which are opened on the upper surface 34a are provided. For example, the grooves 40a and 40b are formed concentrically on both sides (the outer side and the inner side in the radial direction of the frame body 6 ) of the plurality of convex portions 38 . In addition, the grooves 40a and 40b are connected to each other by a plurality of grooves 40c formed along the radial direction of the frame body 6 .

保持構件36透過設置於框體34的內部之流路(未圖示)以及閥42a而連接於吸引源44。又，溝40a、40b、40c透過設置於框體34的內部之流路(未圖示)以及閥42b而連接於吸引源44。作為吸引源44，可使用例如噴射器。The holding member 36 is connected to the suction source 44 through a flow path (not shown) provided inside the frame body 34 and a valve 42a. Moreover, the grooves 40a, 40b, and 40c are connected to the suction source 44 through a flow path (not shown) and a valve 42b provided inside the casing 34 . As the suction source 44, for example, an ejector can be used.

晶圓11以補強部21和框體34的上表面34a重疊的方式配置於工作夾台32上。藉此，晶圓11的補強部21隔著黏著膠帶23被複數個凸部38所支撐。The wafer 11 is placed on the table 32 so that the reinforcing portion 21 and the upper surface 34 a of the frame body 34 overlap. Thereby, the reinforcing portion 21 of the wafer 11 is supported by the plurality of convex portions 38 via the adhesive tape 23 .

圖7(A)是顯示配置於工作夾台32上之晶圓11的剖面圖。再者，在圖7(A)中為了方便說明，僅圖示有晶圓11、黏著膠帶23、框架25、工作夾台32的剖面的形狀。若在已將晶圓11配置於工作夾台32上的狀態下打開閥42a、42b，吸引源44的吸引力(負壓)會作用於吸引面36a以及溝40a、40b、40c，而可隔著黏著膠帶23藉由工作夾台32來吸引保持晶圓11。FIG. 7(A) is a cross-sectional view showing the wafer 11 disposed on the work chuck 32 . In addition, in FIG. 7(A), for convenience of description, only the cross-sectional shape of the wafer 11, the adhesive tape 23, the frame 25, and the table 32 is shown. When the valves 42a and 42b are opened in a state where the wafer 11 is placed on the table 32, the suction force (negative pressure) of the suction source 44 acts on the suction surface 36a and the grooves 40a, 40b, and 40c, so that the The adhesive tape 23 sucks and holds the wafer 11 by the work chuck 32 .

圖7(B)是顯示已被工作夾台32所吸引之晶圓11的剖面圖。黏著膠帶23當中貼附於複數個器件晶片27之區域會被吸引而接觸於吸引面36a。又，黏著膠帶23當中貼附於晶圓11的外周部(補強部21)的背面11b側之區域以及其附近之區域，會被溝40a、40b吸引，而接觸於框體34的上表面34a。FIG. 7(B) is a cross-sectional view showing the wafer 11 that has been attracted by the work chuck 32 . The regions of the adhesive tape 23 that are attached to the plurality of device chips 27 are attracted to contact the attracting surface 36a. In addition, the area of the adhesive tape 23 on the backside 11b side of the outer peripheral portion (reinforcing portion 21 ) of the wafer 11 and the area in the vicinity thereof are attracted by the grooves 40a and 40b and come into contact with the upper surface 34a of the frame body 34 .

在此，如圖6所示，在框體34的上表面34a側，藉由複數個凸部38而呈環狀地形成有週期性的凹凸。因此，若使負壓作用於溝40a、40b時，黏著膠帶23當中貼附於晶圓11的外周部之區域會沿著框體34的上表面34a以及凸部38而變形且成為起伏的狀態。並且，補強部21當中未受到凸部38支撐之區域，會被黏著膠帶23朝框體34的上表面34a側拉伸，而移動成進入相鄰的凸部38之間。其結果，剪切應力會作用於補強部21。亦即，可藉由以工作夾台32吸引黏著膠帶23，來對補強部21賦與外力。Here, as shown in FIG. 6 , on the upper surface 34 a side of the frame body 34 , periodic irregularities are formed annularly by a plurality of convex portions 38 . Therefore, when a negative pressure is applied to the grooves 40a and 40b, the region of the adhesive tape 23 attached to the outer peripheral portion of the wafer 11 is deformed along the upper surface 34a and the convex portion 38 of the frame body 34 and becomes a undulating state . In addition, the area of the reinforcing portion 21 that is not supported by the convex portion 38 is pulled toward the upper surface 34 a of the frame body 34 by the adhesive tape 23 and moved to enter between the adjacent convex portions 38 . As a result, shear stress acts on the reinforcement portion 21 . That is, by sucking the adhesive tape 23 with the work clamp 32 , an external force can be applied to the reinforcing portion 21 .

若對補強部21賦與外力，會從形成於補強部21之切削溝11c產生龜裂，且在補強部21的厚度方向上發展。藉此，補強部21會沿著分割預定線13斷裂。亦即，切削溝11c作為補強部21的分割之起點而發揮功能，且環狀的補強部21沿著分割預定線13分割成複數個碎片。When an external force is applied to the reinforcement portion 21 , cracks are generated from the cutting grooves 11 c formed in the reinforcement portion 21 and develop in the thickness direction of the reinforcement portion 21 . As a result, the reinforcing portion 21 is broken along the planned dividing line 13 . That is, the cutting groove 11c functions as a starting point of division of the reinforcing portion 21, and the annular reinforcing portion 21 is divided into a plurality of pieces along the line 13 to be divided.

圖8是顯示補強部21已被分割成複數個碎片29之晶圓11的立體圖。如圖8所示，在因為補強部21的分割所形成之複數個碎片29當中，被工作夾台32的凸部38(參照圖6等)所支撐之碎片29被配置成比其他的碎片29以及器件晶片27更朝上方突出。FIG. 8 is a perspective view of the wafer 11 showing that the reinforcing portion 21 has been divided into a plurality of fragments 29 . As shown in FIG. 8 , among the plurality of pieces 29 formed by the division of the reinforcing portion 21 , the pieces 29 supported by the convex portions 38 (see FIG. 6 , etc.) of the work table 32 are arranged more than the other pieces 29 And the device wafer 27 protrudes further upward.

再者，在分割步驟中，不一定需要沿著全部的切削溝11c來分割補強部21。具體而言，只要將補強部21分割成預定的尺寸以下之複數個碎片，以便可在後述之去除步驟中適當地去除補強部21即可。In addition, in the dividing step, it is not always necessary to divide the reinforcing portion 21 along all the cutting grooves 11c. Specifically, the reinforcing portion 21 may be divided into a plurality of pieces of a predetermined size or less so that the reinforcing portion 21 can be appropriately removed in a removal step to be described later.

又，在圖6中，雖然說明了藉由框體34的上表面34a與凸部38來構成工作夾台32的凹凸的例子，但對凹凸的形成方法並無限制。例如，亦可藉由在框體34的上表面34a側設置複數個凹部(溝)來形成凹凸。In addition, in FIG. 6, although the upper surface 34a of the frame body 34 and the convex part 38 were demonstrated to form the unevenness|corrugation of the table 32 as an example, the formation method of the unevenness is not limited. For example, unevenness may be formed by providing a plurality of concave portions (grooves) on the upper surface 34a side of the frame body 34 .

此外，對補強部21賦與外力之方法，並不受限於由工作夾台32所進行之黏著膠帶23的吸引。例如，亦可在已藉由預定的工作夾台保持晶圓11的狀態下將按壓構件壓附於補強部21，藉此對補強部21賦與外力。又，亦可使用可藉由外力的賦與而擴張之膠帶(擴張膠帶)來作為黏著膠帶23，並藉由將擴張膠帶拉伸並擴張來對補強部21賦與外力。In addition, the method of applying an external force to the reinforcing portion 21 is not limited to the suction of the adhesive tape 23 by the work table 32 . For example, an external force may be applied to the reinforcing portion 21 by pressing the pressing member to the reinforcing portion 21 in a state in which the wafer 11 is held by a predetermined stage. Moreover, the adhesive tape (expansion tape) which can be expanded by application of an external force may be used as the adhesive tape 23, and an external force may be imparted to the reinforcing part 21 by extending and expanding the expansion tape.

其次，將已分割成複數個碎片29之補強部21去除(去除步驟)。在去除步驟中，是將因補強部21的分割所形成之各碎片29從黏著膠帶23剝離來去除。Next, the reinforcing part 21 divided into the plurality of pieces 29 is removed (removal step). In the removal step, each fragment 29 formed by the division of the reinforcing portion 21 is peeled off from the adhesive tape 23 and removed.

圖9是顯示去除步驟中的晶圓11的立體圖。例如，可在被工作夾台32(參照圖6等)所保持之晶圓11的周圍設置噴射流體48之噴嘴46、及回收補強部21(碎片29)之回收機構50。FIG. 9 is a perspective view showing the wafer 11 in the removing step. For example, nozzles 46 for ejecting fluid 48 and recovery mechanisms 50 for recovering reinforcing portion 21 (fragments 29 ) may be provided around wafer 11 held by work chuck 32 (see FIG. 6 , etc.).

噴嘴46固定在比晶圓11的外周緣更位於晶圓11的半徑方向外側之預定的噴射位置。於噴嘴46連接有對噴嘴46供給流體48之流體供給源(未圖示)。又，噴嘴46具備噴射口46a，前述噴射口46a會噴射從流體供給源所供給之流體48。再者，可從噴嘴46噴射之流體48並無限制，可使用例如空氣等的氣體。又，也可以使用經加壓之純水等的液體(高壓液體)、或包含液體(純水等)與氣體(空氣等)之混合流體來作為流體48。The nozzle 46 is fixed to a predetermined ejection position which is located outside the outer peripheral edge of the wafer 11 in the radial direction of the wafer 11 . A fluid supply source (not shown) for supplying a fluid 48 to the nozzle 46 is connected to the nozzle 46 . Moreover, the nozzle 46 is provided with the injection port 46a which injects the fluid 48 supplied from the fluid supply source. Furthermore, the fluid 48 that can be ejected from the nozzle 46 is not limited, and a gas such as air can be used. Further, a liquid (high pressure liquid) such as pressurized pure water, or a mixed fluid containing a liquid (pure water or the like) and a gas (air or the like) may be used as the fluid 48 .

例如，噴嘴46是以噴射口46a面對於晶圓11的外周部(補強部21)的方式設置在和晶圓11大致相同的高度位置。又，可將噴嘴46的方向調節成噴射口46a和晶圓11的外周緣的切線相交。藉此，可將流體48沿著晶圓11的外周緣的切線方向噴射。For example, the nozzle 46 is provided at substantially the same height as the wafer 11 so that the ejection port 46a faces the outer peripheral portion (the reinforcement portion 21 ) of the wafer 11 . In addition, the direction of the nozzle 46 can be adjusted so that the tangent line between the ejection port 46a and the outer peripheral edge of the wafer 11 intersects. Thereby, the fluid 48 can be ejected along the tangential direction of the outer peripheral edge of the wafer 11 .

作為回收機構50，可使用例如具備開口部50a之容器，前述開口部50a朝向噴嘴46的噴射口46a側開口。並且，將噴嘴46與回收機構50配置成夾著晶圓11的補強部21。例如，可將噴嘴46以及回收機構50定位在晶圓11的外周緣的切線上。藉此，補強部21會被配置在噴嘴46的噴射口46a與回收機構50的開口部50a之間。As the collection mechanism 50, for example, a container provided with an opening 50a that opens toward the ejection port 46a side of the nozzle 46 can be used. In addition, the nozzle 46 and the recovery mechanism 50 are arranged so as to sandwich the reinforcing portion 21 of the wafer 11 . For example, the nozzle 46 and the recovery mechanism 50 may be positioned on a tangent to the outer periphery of the wafer 11 . Thereby, the reinforcement part 21 is arrange|positioned between the injection port 46a of the nozzle 46 and the opening part 50a of the collection|recovery mechanism 50.

在去除步驟中，是一面以低速(例如5~10rpm)使保持有晶圓11之工作夾台32(參照圖6等)旋轉一面從噴嘴46噴射流體48。藉此，可從位於晶圓11的外側之噴射位置(噴嘴46的位置)朝向補強部21噴射流體48。其結果，藉由流體48對補強部21賦與壓力，已被分割之補強部21(碎片29)會從黏著膠帶23剝離。並且，已被分割之補強部21(碎片29)會朝和流體48的噴射位置為相反之側飛散。In the removal step, the fluid 48 is ejected from the nozzle 46 while rotating the table 32 (see FIG. 6 and the like) holding the wafer 11 at a low speed (eg, 5 to 10 rpm). Thereby, the fluid 48 can be ejected toward the reinforcement portion 21 from the ejection position (position of the nozzle 46 ) located outside the wafer 11 . As a result, the reinforcement part 21 (fragment 29) which has been divided|segmented will peel from the adhesive tape 23 by the fluid 48 applying pressure to the reinforcement part 21. And the reinforcement part 21 (fragment 29) which was divided|segmented scatters to the side opposite to the injection position of the fluid 48.

若晶圓11在已從噴嘴46噴射流體48的狀態下旋轉1圈，可對補強部21的整個區域噴射流體48，而將全部的碎片29從黏著膠帶23剝離。藉此，可將補強部21去除，且在黏著膠帶23上僅殘留複數個器件晶片27。When the wafer 11 rotates once in a state where the fluid 48 has been ejected from the nozzle 46 , the fluid 48 can be ejected to the entire area of the reinforcement portion 21 , and all the chips 29 can be peeled off from the adhesive tape 23 . Thereby, the reinforcing portion 21 can be removed, and only the plurality of device wafers 27 remain on the adhesive tape 23 .

如此，在本實施形態中，因為在分割步驟中將環狀的補強部21分割成複數個碎片29，所以在去除步驟中只要對各碎片29賦與適度的外力，即可以簡單地去除補強部21。藉此，變得不需要用於搬送環狀之狀態的補強部21之精密的搬送機構之準備或操作，而可將補強部21的去除作業簡便化。As described above, in the present embodiment, since the annular reinforcing portion 21 is divided into a plurality of pieces 29 in the dividing step, the reinforcing portion can be easily removed by applying an appropriate external force to each fragment 29 in the removing step. twenty one. Thereby, it becomes unnecessary to prepare and operate the precise conveyance mechanism for conveying the reinforcement part 21 in the annular state, and the removal operation of the reinforcement part 21 can be simplified.

又，如圖9所示，若將流體48的噴射位置(噴嘴46的位置)設定在晶圓11的外側，碎片29會從晶圓11朝向單一方向飛散。藉此，可以防止碎片29從晶圓11朝隨意的方向飛散之情形，且使碎片29的回收變得較容易。Furthermore, as shown in FIG. 9 , if the ejection position of the fluid 48 (position of the nozzle 46 ) is set outside the wafer 11 , the debris 29 is scattered from the wafer 11 in a single direction. In this way, it is possible to prevent the debris 29 from scattering in random directions from the wafer 11 , and to facilitate the recovery of the debris 29 .

此外，藉由將回收機構50配置成和噴嘴46相向，可將因流體48的噴射而飛散之碎片29導向回收機構50的開口部50a，並進入到回收機構50。亦即，可將碎片29的回收與碎片29的去除一起進行。藉此，變得不需要在去除步驟之後進行回收已散落之碎片29的作業，作業效率會提升。Further, by arranging the recovery mechanism 50 to face the nozzle 46 , the debris 29 scattered by the jet of the fluid 48 can be guided to the opening 50 a of the recovery mechanism 50 and entered into the recovery mechanism 50 . That is, the recovery of the debris 29 may be performed together with the removal of the debris 29 . Thereby, it becomes unnecessary to collect the scattered fragments 29 after the removal step, and the work efficiency is improved.

再者，對於回收機構50的種類並無限制。例如回收機構50亦可為連接於噴射器等之吸引源的導管。在此情況下，可以藉由從噴嘴46噴射流體48，並且使吸引源的吸引力(負壓)作用於導管，而確實地將飛散之碎片29引導至導管。In addition, the type of the collection mechanism 50 is not limited. For example, the recovery mechanism 50 may be a conduit connected to a suction source such as an ejector. In this case, by ejecting the fluid 48 from the nozzle 46 and applying the suction force (negative pressure) of the suction source to the duct, the scattered fragments 29 can be surely guided to the duct.

如以上所述，在本實施形態之晶圓的加工方法中，在切削步驟中將器件區域17a分割成複數個器件晶片27，並且在補強部21形成切削溝11c。然後，在分割步驟中，對補強部21賦與外力，而以切削溝11c為起點來分割補強部21。藉此，變得可藉由對經分割之補強部21噴射流體48這種簡便的方法，來容易地從晶圓11去除補強部21。As described above, in the wafer processing method of the present embodiment, the device region 17 a is divided into a plurality of device wafers 27 in the cutting step, and the cutting grooves 11 c are formed in the reinforcing portion 21 . Then, in the dividing step, an external force is applied to the reinforcing portion 21, and the reinforcing portion 21 is divided with the cutting groove 11c as a starting point. Thereby, it becomes possible to easily remove the reinforcement portion 21 from the wafer 11 by a simple method of jetting the fluid 48 to the divided reinforcement portion 21 .

又，在本實施形態之晶圓的加工方法中，藉由從位於晶圓11的外側之預定的噴射位置朝向補強部21噴射流體48，而使經分割之補強部21(複數個碎片29)朝向和噴射位置為相反之側飛散。藉此，可以防止碎片29從晶圓11朝隨意的方向飛散之情形，且使碎片29的回收變得較容易。In addition, in the wafer processing method of the present embodiment, the divided reinforcing portion 21 (a plurality of fragments 29 ) is ejected from the predetermined ejection position on the outer side of the wafer 11 toward the reinforcing portion 21 by spraying the fluid 48 . It scatters on the opposite side of the direction and the spray position. In this way, it is possible to prevent the debris 29 from scattering in random directions from the wafer 11 , and to facilitate the recovery of the debris 29 .

再者，在去除步驟中，亦可藉由交互地實施流體48的噴射、與工作夾台32的旋轉來去除補強部21。具體而言，首先是在使工作夾台32停止的狀態下，對補強部21的一部分噴射流體48。之後，使工作夾台32旋轉預定的角度量，並再次對補強部21的一部分噴射流體48。可藉由將此作業重複到晶圓11旋轉1圈為止，來將全部的碎片29從黏著膠帶23剝離。In addition, in the removal step, the reinforcement portion 21 may be removed by alternately implementing the injection of the fluid 48 and the rotation of the work chuck 32 . Specifically, first, the fluid 48 is jetted to a part of the reinforcing portion 21 in a state in which the table 32 is stopped. After that, the work chuck 32 is rotated by a predetermined angle, and the fluid 48 is injected again to a part of the reinforcing portion 21 . By repeating this operation until the wafer 11 makes one rotation, all the chips 29 can be peeled off from the adhesive tape 23 .

又，在去除步驟中，亦可將複數個器件晶片27以保護膜來被覆。例如，亦可從工作夾台32的上方朝向晶圓11供給純水，而以水膜來覆蓋複數個器件晶片27。藉此，在萬一碎片29朝器件晶片27側飛散的情況下，也會變得難以讓器件晶片27損傷。In addition, in the removal step, a plurality of device wafers 27 may be covered with a protective film. For example, pure water may be supplied toward the wafer 11 from above the work chuck 32 , and the plurality of device wafers 27 may be covered with a water film. This makes it difficult to damage the device wafer 27 even if the debris 29 scatters toward the device wafer 27 side.

又，在本實施形態中，雖然說明了使用相同的工作夾台32(參照圖6等)來實施分割步驟與去除步驟之例子，但亦可在分割步驟與去除步驟中藉由不同的工作夾台來保持晶圓11。In addition, in the present embodiment, although the example in which the dividing step and the removing step are performed using the same work holder 32 (see FIG. 6 , etc.) has been described, the dividing step and the removing step may be performed by using different work holders. stage to hold the wafer 11 .

另外，上述實施形態之構造、方法等，只要在不脫離本發明之目的之範圍內，均可適當變更而實施。In addition, the structure, method, etc. of the above-mentioned embodiment can be suitably changed and implemented in the range which does not deviate from the objective of this invention.

2:切削裝置 4,32:工作夾台(保持工作台) 4a:保持面 6,34:框體(本體部) 6a,8a,34a:上表面 6b,19,34b:凹部(溝) 8,36:保持構件 10:夾具 11:晶圓 11a:正面 11b:背面 11c:切削溝 12:切削單元 13:分割預定線(切割道) 14:殼體 15:器件 16:切削刀片 17a:器件區域 17b:外周剩餘區域 18:刀片蓋 19a:底面 19b:側面(內壁) 20:連接部 21:補強部(凸部) 22,46:噴嘴 23:黏著膠帶 25:框架 25a:開口 27:器件晶片 29:碎片 30:外力賦與單元 36a:吸引面 38:凸部(突起) 40a,40b,40c:溝 42a,42b:閥 44:吸引源 46a:噴射口 48:流體 50:回收機構 50a:開口部 X,Y,Z:方向 2: Cutting device 4, 32: Work clamp table (holding table) 4a: Keep Face 6,34: Frame (body part) 6a, 8a, 34a: upper surface 6b, 19, 34b: Recess (groove) 8, 36: Retention member 10: Fixtures 11: Wafer 11a: Front 11b: Back 11c: Cutting groove 12: Cutting unit 13: Divide the predetermined line (cutting road) 14: Shell 15: Devices 16: Cutting inserts 17a: Device area 17b: Peripheral remaining area 18: Blade cover 19a: Underside 19b: side (inner wall) 20: Connection part 21: Reinforcing part (convex part) 22,46: Nozzle 23: Adhesive tape 25: Frame 25a: Opening 27: Device Wafer 29: Fragments 30: External force imparting unit 36a: Attracting surface 38: convex part (protrusion) 40a, 40b, 40c: Groove 42a, 42b: valve 44: Attract source 46a: jet port 48: Fluid 50: Recycling Agency 50a: Opening X,Y,Z: direction

圖1(A)是顯示晶圓的正面側的立體圖，圖1(B)是顯示晶圓的背面側的立體圖。 圖2(A)是顯示貼附有黏著膠帶之晶圓的立體圖，圖2(B)是顯示貼附有黏著膠帶之晶圓的剖面圖。 圖3是顯示切削裝置的立體圖。 圖4是顯示被工作夾台所保持之晶圓的剖面圖。 圖5(A)是顯示沿著第1方向被切削之晶圓的剖面圖，圖5(B)是顯示沿著第2方向被切削之晶圓的剖面圖。 圖6是顯示外力賦與單元的立體圖。 圖7(A)是顯示已配置於工作夾台上之晶圓的剖面圖，圖7(B)是顯示已被工作夾台所吸引之晶圓的剖面圖。 圖8是顯示補強部已被分割成複數個碎片之晶圓的立體圖。 圖9是顯示去除步驟中的晶圓的立體圖。 FIG. 1(A) is a perspective view showing the front side of the wafer, and FIG. 1(B) is a perspective view showing the back side of the wafer. FIG. 2(A) is a perspective view showing the wafer to which the adhesive tape is attached, and FIG. 2(B) is a cross-sectional view showing the wafer to which the adhesive tape is attached. FIG. 3 is a perspective view showing the cutting device. FIG. 4 is a cross-sectional view showing a wafer held by a work chuck. FIG. 5(A) is a cross-sectional view showing the wafer cut along the first direction, and FIG. 5(B) is a cross-sectional view showing the wafer cut along the second direction. FIG. 6 is a perspective view showing an external force imparting unit. FIG. 7(A) is a cross-sectional view showing the wafer disposed on the work chuck, and FIG. 7(B) is a cross-sectional view showing the wafer attracted by the work chuck. FIG. 8 is a perspective view showing a wafer in which the reinforcing portion has been divided into a plurality of fragments. FIG. 9 is a perspective view showing the wafer in the removing step.

11:晶圓 11: Wafer

11a:正面 11a: Front

11b:背面 11b: Back

11c:切削溝 11c: Cutting groove

15:器件 15: Devices

17a:器件區域 17a: Device area

21:補強部(凸部) 21: Reinforcing part (convex part)

23:黏著膠帶 23: Adhesive tape

25:框架 25: Frame

25a:開口 25a: Opening

27:器件晶片 27: Device Wafer

29:碎片 29: Fragments

46:噴嘴 46: Nozzle

46a:噴射口 46a: jet port

48:流體 48: Fluid

50:回收機構 50: Recycling Agency

50a:開口部 50a: Opening

Claims (4)

一種晶圓的加工方法，對晶圓進行加工，前述晶圓在正面側具備器件區域，在背面側具備形成在和該器件區域對應之區域的凹部，在外周部具備包圍該器件區域以及該凹部之環狀的補強部，前述器件區域是在被以相互交叉的方式配置排列成格子狀之複數條分割預定線所區劃出的複數個區域中各自形成有器件之區域，前述晶圓的加工方法的特徵在於具備以下步驟： 膠帶貼附步驟，在該晶圓的背面側沿著該凹部以及該補強部貼附黏著膠帶； 保持步驟，藉由第1工作夾台隔著該黏著膠帶來保持該凹部的底面； 切削步驟，藉由以切削刀片沿著該分割預定線來切削該晶圓，而將該器件區域分割成複數個器件晶片，並且在該補強部形成切削溝； 分割步驟，藉由對該補強部賦與外力，而以該切削溝為起點來分割該補強部；及 去除步驟，藉由從位於該晶圓的外側之預定的噴射位置朝向該補強部噴射流體，而使經分割之該補強部朝向和該噴射位置為相反之側飛散來去除。 A method of processing a wafer, the wafer having a device region on the front side, a concave portion formed in a region corresponding to the device region on the back side, and a peripheral portion surrounding the device region and the concave portion. The ring-shaped reinforcing portion, the device region is a region where devices are respectively formed in a plurality of regions divided by a plurality of predetermined dividing lines arranged in a lattice shape in an intersecting manner, and the wafer processing method. is characterized by the following steps: an adhesive tape attaching step of attaching an adhesive tape along the concave portion and the reinforcing portion on the back side of the wafer; The holding step is to hold the bottom surface of the concave portion through the adhesive tape by the first work clamp; The cutting step includes cutting the wafer along the predetermined dividing line with a cutting blade to divide the device region into a plurality of device wafers, and forming cutting grooves in the reinforcing portion; a dividing step, by applying an external force to the reinforcing part, and dividing the reinforcing part with the cutting groove as a starting point; and In the removing step, a fluid is ejected toward the reinforcement portion from a predetermined ejection position located on the outer side of the wafer, and the segmented reinforcement portion is scattered and removed toward the opposite side to the ejection position. 如請求項1之晶圓的加工方法，其中在該去除步驟中，是沿著該晶圓的外周緣的切線方向來噴射該流體。The method for processing a wafer according to claim 1, wherein in the removing step, the fluid is sprayed along a tangential direction of the outer periphery of the wafer. 如請求項1或2之晶圓的加工方法，其中在該分割步驟中，是在已藉由在和該晶圓的該補強部對應之位置具有凹凸之第2工作夾台來支撐該晶圓的狀態下，藉由該第2工作夾台來吸引該黏著膠帶，藉此讓該黏著膠帶沿著該凹凸配置來分割該補強部。The method for processing a wafer according to claim 1 or 2, wherein in the dividing step, the wafer is supported by a second table having concavities and convexities at positions corresponding to the reinforcing portion of the wafer In this state, the adhesive tape is sucked by the second work jig, so that the adhesive tape is arranged along the unevenness to divide the reinforcing portion. 如請求項1至3中任一項之晶圓的加工方法，其中在該去除步驟中，是在將噴嘴與回收機構配置成夾著該晶圓的該補強部的狀態下，從該噴嘴朝向該補強部噴射該流體，藉此使經分割之該補強部朝向該回收機構飛散而藉由該回收機構來回收。The method for processing a wafer according to any one of claims 1 to 3, wherein in the removing step, the nozzle and the recovery mechanism are arranged to sandwich the reinforcing portion of the wafer from the nozzle toward the The reinforcing part sprays the fluid, whereby the divided reinforcing part is scattered toward the recovery mechanism and recovered by the recovery mechanism.
TW110145282A 2020-12-08 2021-12-03 Wafer processing method capable of easily removing a reinforcing part remaining on an outer peripheral part of a wafer TW202224011A (en)

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