TW202218003A - Etching device - Google Patents

Etching device Download PDF

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Publication number
TW202218003A
TW202218003A TW109137455A TW109137455A TW202218003A TW 202218003 A TW202218003 A TW 202218003A TW 109137455 A TW109137455 A TW 109137455A TW 109137455 A TW109137455 A TW 109137455A TW 202218003 A TW202218003 A TW 202218003A
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Taiwan
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wafer
carrier
ring wall
etching apparatus
working fluid
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TW109137455A
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Chinese (zh)
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TWI747580B (en
Inventor
馮傳彰
劉茂林
吳庭宇
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辛耘企業股份有限公司
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Priority to TW109137455A priority Critical patent/TWI747580B/en
Priority to KR1020200159800A priority patent/KR102433759B1/en
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Publication of TW202218003A publication Critical patent/TW202218003A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Abstract

An etching device for etching single wafer by a working fluid is provided. The etching device includes has an etching mechanism, a rotating motor, an opening and an open-close mechanism and an injection nozzle. The etching mechanism has a carrier for carrying the wafer and an annular wall for surrounding a periphery of the wafer and containing the working fluid therein. The rotating motor is linked to the carrier for driving the carrier to rotate. The open-close mechanism is linked to the etching mechanism for driving the carrier and the annular wall to move relative to each other, and the wafer is thereby moved into or out of the annular wall. The injection nozzle for supplying the working fluid, and is arranged at one side of the etching mechanism and toward an interior of the annular wall.

Description

晶圓蝕刻裝置Wafer Etching Device

本發明係有關於晶圓蝕刻裝置，尤其是一種用於蝕刻單一晶圓的晶圓蝕刻裝置。The present invention relates to a wafer etching device, in particular to a wafer etching device for etching a single wafer.

現今的晶圓蝕刻製程之趨勢已逐漸朝向單晶圓加工的方向發展，藉此以符合產品多樣化的需求。現有的單晶圓蝕刻機係以在晶圓表面噴灑蝕刻液的方式進行蝕刻，其蝕刻液在晶圓邊緣的停留時間過短，造成晶圓邊緣的蝕刻良率不佳。針對前述的問題，現行的解決方法係先將晶圓堆疊後預浸晶圓使晶圓的表面各處與蝕刻液充分接觸後再移入蝕刻機進行蝕刻。然而，此方法需移動潮濕的晶圓，飛濺的蝕刻液難以管控。再者，批次預浸程序也失去單晶圓蝕刻的優點。The trend of the current wafer etching process has gradually developed toward the direction of single-wafer processing, thereby meeting the needs of product diversification. The existing single-wafer etching machine performs etching by spraying the etching solution on the surface of the wafer, and the residence time of the etching solution at the wafer edge is too short, resulting in poor etching yield at the wafer edge. In view of the aforementioned problems, the current solution is to stack the wafers and then pre-dip the wafers to make the surfaces of the wafers fully contact with the etchant, and then move the wafers into an etching machine for etching. However, this method requires moving the wet wafer, and the splash of the etchant is difficult to control. Furthermore, the batch pre-dip process also loses the advantages of single-wafer etching.

有鑑於此，本發明人遂針對上述現有技術，特潛心研究並配合學理的運用，盡力解決上述之問題點，即成為本發明人改良之目標。In view of this, the inventor of the present invention has devoted himself to the study of the above-mentioned prior art and cooperated with the application of theories, trying his best to solve the above-mentioned problems, which is the goal of the present inventor's improvement.

本發明提供一種用於蝕刻單一晶圓的晶圓蝕刻裝置。The present invention provides a wafer etching apparatus for etching a single wafer.

本發明提供一種晶圓蝕刻裝置，其用於以一工作流體蝕刻一晶圓，且其包括一浸泡機構、一旋轉馬達、一開閉機構及一注液噴嘴。浸泡機構包括用於承載晶圓的一載具及用於圈套於晶圓外緣以供盛裝工作流體的一環壁。旋轉馬達連動載具而能夠驅動載具旋轉。開閉機構連動浸泡機構以驅動載具及環壁相對移動而使晶圓進出環壁。注液噴嘴用於供應工作流體，其設置在浸泡機構的一側且朝向環壁內配置。The invention provides a wafer etching device, which is used for etching a wafer with a working fluid, and includes a soaking mechanism, a rotating motor, an opening and closing mechanism and a liquid injection nozzle. The soaking mechanism includes a carrier for carrying the wafer and a ring wall for enveloping the outer edge of the wafer for containing the working fluid. The rotary motor is interlocked with the carrier to be able to drive the carrier to rotate. The opening and closing mechanism is linked with the soaking mechanism to drive the carrier and the ring wall to move relatively so that the wafers enter and leave the ring wall. The liquid injection nozzle is used for supplying the working fluid, which is arranged on one side of the soaking mechanism and is disposed toward the inside of the ring wall.

本發明的晶圓蝕刻裝置更包含一排水外槽，浸泡機構容置在排水外槽內。排水外槽包含相互套疊的複數分流環罩，各分流環罩分別環繞浸泡機構並且能夠獨立升降。The wafer etching device of the present invention further comprises an outer drain tank, and the soaking mechanism is accommodated in the drain outer tank. The drainage outer tank includes a plurality of shunt ring covers that are nested with each other, and each shunt ring cover surrounds the soaking mechanism respectively and can be lifted and lowered independently.

本發明的晶圓蝕刻裝置，其開閉機構包含連接載具的一第一升降組件。開閉機構包含連接環壁的一第二升降組件。In the wafer etching apparatus of the present invention, the opening and closing mechanism includes a first lifting component connected to the carrier. The opening and closing mechanism includes a second lifting component connected to the ring wall.

本發明的晶圓蝕刻裝置，其環壁設有一止擋組件以止擋溢出晶圓表面的工作流體。止擋組件包含連通環壁之內壁面設有複數噴氣口以將氣體注入環壁與晶圓之間的空隙中。止擋組件包含設置在環壁的一密封環，載具包含有一底板，密封環抵壓於底板的邊緣。底板的頂面形成凸錐狀的一排水面。載具包含立設在底板頂面的複數夾爪，晶圓承載於些夾爪。In the wafer etching device of the present invention, the ring wall is provided with a stopper component to stop the working fluid overflowing from the surface of the wafer. The stopper assembly includes a plurality of gas injection ports on the inner wall of the communication ring wall to inject gas into the gap between the ring wall and the wafer. The stopper assembly includes a sealing ring arranged on the ring wall, the carrier includes a bottom plate, and the sealing ring is pressed against the edge of the bottom plate. The top surface of the bottom plate forms a convex-conical drainage surface. The carrier includes a plurality of clamping jaws erected on the top surface of the base plate, and the wafer is carried by the clamping jaws.

本發明的晶圓蝕刻裝置，其旋轉馬達連動環壁而能夠驅動環壁與載具同時旋轉。In the wafer etching apparatus of the present invention, the rotary motor is linked with the ring wall to drive the ring wall and the carrier to rotate simultaneously.

本發明的晶圓蝕刻裝置，其載具旁設置有環繞該載具的複數清潔噴嘴，該些清潔噴嘴上仰配置。該些清潔噴嘴的噴射方向外發散。In the wafer etching device of the present invention, a plurality of cleaning nozzles surrounding the carrier are arranged beside the carrier, and the cleaning nozzles are arranged upwardly. The spraying direction of the cleaning nozzles diverges outward.

本發明的晶圓蝕刻裝置其藉由環壁圈繞晶圓的邊緣在將工作流體注入環壁內再旋轉晶圓並進行蝕刻。因此使得工作流體能夠完全覆蓋晶圓的表面，故使蝕刻品質均勻穩定。The wafer etching device of the present invention uses the ring wall to surround the edge of the wafer, injecting the working fluid into the ring wall, and then rotates the wafer and performs etching. Therefore, the working fluid can completely cover the surface of the wafer, so that the etching quality is uniform and stable.

本發明的晶圓蝕刻裝置整體概呈圓柱狀且沿其中心軸對稱，因此各實施例中以其縱向剖視圖說明。The wafer etching apparatus of the present invention is generally cylindrical as a whole and symmetrical along its central axis, so each embodiment is described with its longitudinal cross-sectional view.

參閱圖1至圖3，本發明的第一實施例提供一種晶圓蝕刻裝置，其用於以一工作流體20蝕刻一晶圓10，且其至少包括一浸泡機構100、一旋轉馬達200、一開閉機構300及至少一注液噴嘴400。Referring to FIGS. 1 to 3 , a first embodiment of the present invention provides a wafer etching apparatus, which is used for etching a wafer 10 with a working fluid 20 , and at least includes a soaking mechanism 100 , a rotating motor 200 , a The opening and closing mechanism 300 and at least one liquid injection nozzle 400 .

浸泡機構100包括一載具110及一環壁120，載具110用於承載晶圓10，環壁120用於圈套於晶圓10之外緣以供盛裝工作流體20並使工作流體20覆蓋晶圓10之表面。載具110包含有一底板101以及複數夾爪111，底板101呈碟形，夾爪111立設在底板101的頂面，晶圓10則承載於該些夾爪111之上。載具110的底板101可以藉由卡榫121卡接環壁120而固定底板101與環壁120。底板101的頂面還形成一排水面112，且排水面112較佳地呈凸錐狀，排水面112能夠將殘留在底板101頂面上的工作流體20向外排除。The soaking mechanism 100 includes a carrier 110 and a ring wall 120 . The carrier 110 is used to carry the wafer 10 , and the ring wall 120 is used to wrap around the outer edge of the wafer 10 for containing the working fluid 20 and making the working fluid 20 cover the wafer. Surface of 10. The carrier 110 includes a base plate 101 and a plurality of clamping jaws 111 . The base plate 101 is dish-shaped, the clamping jaws 111 are erected on the top surface of the base plate 101 , and the wafer 10 is carried on the clamping jaws 111 . The bottom plate 101 of the carrier 110 can be fixed to the bottom plate 101 and the ring wall 120 by engaging the ring wall 120 with the tenon 121 . A drainage surface 112 is also formed on the top surface of the bottom plate 101 , and the drainage surface 112 is preferably in the shape of a convex cone. The drainage surface 112 can discharge the working fluid 20 remaining on the top surface of the bottom plate 101 to the outside.

環壁120設有一止擋組件130以止擋溢出晶圓10表面的工作流體20。於本實施例中，止擋組件130較佳地包含設置在環壁120的一密封環131，當晶圓10位於環壁120內時，密封環131抵壓於底板101的邊緣而與底板101閉合。The ring wall 120 is provided with a stopper component 130 to stop the working fluid 20 overflowing from the surface of the wafer 10 . In this embodiment, the stopper assembly 130 preferably includes a sealing ring 131 disposed on the ring wall 120 . When the wafer 10 is located in the ring wall 120 , the sealing ring 131 is pressed against the edge of the bottom plate 101 to be connected to the bottom plate 101 . closure.

旋轉馬達200至少連動載具110而能夠驅動載具110，於本實施例中，旋轉馬達200更進一步連動環壁120而能夠驅動環壁120與載具110同時旋轉。具體而言，載具110及環壁120分別直接或間接連接至同一旋轉軸210，且旋轉馬達200嚙合旋轉軸210而驅動載具110及環壁120旋轉，旋轉馬達200可以直接嚙合旋轉軸210或者藉由減速齒輪間接嚙合旋轉軸210。The rotary motor 200 at least links the carrier 110 to drive the carrier 110 . In this embodiment, the rotary motor 200 further links the ring wall 120 to drive the ring wall 120 and the carrier 110 to rotate simultaneously. Specifically, the carrier 110 and the ring wall 120 are respectively directly or indirectly connected to the same rotation shaft 210 , and the rotary motor 200 engages the rotation shaft 210 to drive the carrier 110 and the ring wall 120 to rotate, and the rotation motor 200 can directly engage the rotation shaft 210 Alternatively, the rotating shaft 210 may be indirectly meshed with the reduction gear.

開閉機構300連動浸泡機構100以驅動載具110及環壁120相對升降移動而使晶圓10能夠進出環壁120。於本實施例中，開閉機構300包含連接載具110的一第一升降組件310以及連接環壁120的一第二升降組件320。第一升降組件310以及第二升降組件320分別至少包含直立設置的一伸縮桿311/321，伸縮桿311/321可以是電動缸(線性致動器)、液壓缸等動力元件，但本發明不以此限。具體而言，旋轉馬達200較佳地藉由旋轉軸210驅動一載台旋轉，第一升降組件310以及第二升降組件320分別立設在載台上，且載具110及環壁120分別設置在第一升降組件310上以及第二升降組件320上而藉此間接連接至旋轉軸210。The opening and closing mechanism 300 is linked with the soaking mechanism 100 to drive the carrier 110 and the ring wall 120 to move up and down relative to each other so that the wafer 10 can enter and exit the ring wall 120 . In this embodiment, the opening and closing mechanism 300 includes a first lifting component 310 connected to the carrier 110 and a second lifting component 320 connected to the ring wall 120 . The first lifting assembly 310 and the second lifting assembly 320 respectively include at least one telescopic rod 311/321 arranged upright. The telescopic rod 311/321 may be a power element such as an electric cylinder (linear actuator), a hydraulic cylinder, etc., but the present invention does not to this limit. Specifically, the rotary motor 200 preferably drives a platform to rotate through the rotating shaft 210 , the first lifting component 310 and the second lifting component 320 are respectively erected on the platform, and the carrier 110 and the ring wall 120 are respectively arranged The first lift assembly 310 and the second lift assembly 320 are thereby indirectly connected to the rotating shaft 210 .

注液噴嘴400用於供應工作流體20，其設置在浸泡機構100的一側且朝向環壁120內配置。於本實施例中，其工作流體20可以為用於蝕刻晶圓10的蝕刻液或是用於去除晶圓10上殘留蝕刻液的清洗液。對應晶圓10上不同的鍍層需使用相對應的蝕刻液，因此本發明不限定蝕刻液的種類。清洗液則可以是水或是其他揮發性溶液。較佳地可以配置多個注液噴嘴400以提供多種不同的工作流體20。The liquid injection nozzle 400 is used for supplying the working fluid 20 , and is disposed on one side of the soaking mechanism 100 and is disposed toward the inside of the annular wall 120 . In this embodiment, the working fluid 20 may be an etchant for etching the wafer 10 or a cleaning solution for removing the residual etchant on the wafer 10 . Corresponding etchants need to be used for different plating layers on the wafer 10 , so the present invention does not limit the types of etchants. The cleaning solution can be water or other volatile solutions. Preferably, multiple injection nozzles 400 can be configured to provide multiple different working fluids 20 .

本發明的晶圓蝕刻裝置，較佳地更包含一排水外槽500，浸泡機構100容置在排水外槽500內。排水外槽500包含相互套疊的複數分流環罩510，各分流環罩510分別環繞浸泡機構100並且該些分流環罩510之中的至少一部份分別連接升降機構520而能夠獨立升降，藉此使得相套疊的分流環罩510皆能夠分離。當相套疊分流環罩510分離時，二者之間的間隙形成排水道501以供工作流體20通過而排出。藉由選擇性地升降該些分流環罩510而能夠開閉各排水道501。當使用多種工作流體20時，各工作流體20可以通過相對應的排水道501分別排除以避免各工作流體20被沾附在排水道501內壁的另一工作流體20汙染。The wafer etching apparatus of the present invention preferably further includes an outer drain tank 500 , and the soaking mechanism 100 is accommodated in the drain outer tank 500 . The outer drainage tank 500 includes a plurality of shunt ring covers 510 that are overlapped with each other, each of the shunt ring covers 510 surrounds the soaking mechanism 100 respectively, and at least a part of the shunt ring covers 510 are respectively connected to the lifting mechanism 520 and can be lifted independently. This enables the overlapping diverter ring housings 510 to be separated. When the telescopic split ring covers 510 are separated, the gap between the two forms a drainage channel 501 for the working fluid 20 to pass through and be discharged. Each drainage channel 501 can be opened and closed by selectively raising and lowering the diverter ring covers 510 . When multiple working fluids 20 are used, each working fluid 20 can be separately drained through the corresponding drainage channel 501 to avoid contamination of each working fluid 20 by another working fluid 20 adhering to the inner wall of the drainage channel 501 .

參閱圖2，本發明的晶圓蝕刻裝置使用時，載具110及環壁120先相對升降分離使載具110位為環壁120之外的上方，以便於將晶圓10水平置於載具110上。Referring to FIG. 2 , when the wafer etching apparatus of the present invention is used, the carrier 110 and the ring wall 120 are first lifted and separated relative to each other so that the carrier 110 is positioned above the ring wall 120 , so that the wafer 10 can be placed horizontally on the carrier 110 on.

參閱圖3，接著相對升降載具110及環壁120使將晶圓10移入環壁120內，且載具110的底板101抵壓於密封環131而使底板101閉合環壁120。再以注液噴嘴400將工作流體20注入環壁120內以淹沒環壁120內的晶圓10。藉由旋轉馬達200轉動載具110而帶動晶圓10旋轉以使晶圓10的表面能被適度地蝕刻。Referring to FIG. 3 , the wafer 10 is moved into the ring wall 120 relative to the lifting carrier 110 and the ring wall 120 , and the bottom plate 101 of the carrier 110 is pressed against the sealing ring 131 to close the ring wall 120 . Then, the working fluid 20 is injected into the ring wall 120 by the liquid injection nozzle 400 to submerge the wafer 10 in the ring wall 120 . The carrier 110 is rotated by the rotary motor 200 to drive the wafer 10 to rotate, so that the surface of the wafer 10 can be properly etched.

參閱圖4，蝕刻完成後將載具110及環壁120相對升降分離使晶圓10移出環壁120。環壁120內剩餘的工作流體20則向四周瀉流至排水外槽500內並通過相對應的排水道501排出。Referring to FIG. 4 , after the etching is completed, the carrier 110 and the ring wall 120 are relatively lifted and separated to move the wafer 10 out of the ring wall 120 . The remaining working fluid 20 in the annular wall 120 flows out to the outer drainage groove 500 and is discharged through the corresponding drainage channel 501 .

第一實施例所示為本實施例中開閉機構300的一種配置方式，然而本發明不以此為限。開閉機構300之作用在於驅動載具110及環壁120相對升降，本實例中另列舉數種其他可能的配置方式進一步說明如後。The first embodiment shows a configuration of the opening and closing mechanism 300 in this embodiment, but the present invention is not limited to this. The function of the opening and closing mechanism 300 is to drive the carrier 110 and the ring wall 120 to move up and down relative to each other. In this example, several other possible configuration methods are listed and further described below.

參閱圖5，開閉機構300可以只包含連接載具110的第一升降組件310。藉由第一升降組件310驅動載具110相對於環壁120升降即能夠將晶圓10置入或移出環壁120。Referring to FIG. 5 , the opening and closing mechanism 300 may only include the first lifting assembly 310 connected to the carrier 110 . By driving the carrier 110 to move up and down relative to the ring wall 120 by the first lift assembly 310 , the wafer 10 can be placed in or moved out of the ring wall 120 .

參閱圖6，開閉機構300可以只包含連接環壁120的第二升降組件320。藉由第二升降組件320驅動環壁120相對於載具110升降即能夠將晶圓10置入或移出環壁120。Referring to FIG. 6 , the opening and closing mechanism 300 may only include the second lifting component 320 connected to the ring wall 120 . By driving the ring wall 120 to move up and down relative to the carrier 110 by the second lift assembly 320 , the wafer 10 can be placed in or removed from the ring wall 120 .

參閱圖7至圖9，本發明的第二實施例提供一種晶圓蝕刻裝置，其用於以一工作流體20蝕刻一晶圓10，且其至少包括一浸泡機構100、一旋轉馬達200、一開閉機構300及如同第一實施的至少一注液噴嘴400。Referring to FIG. 7 to FIG. 9 , a second embodiment of the present invention provides a wafer etching apparatus, which is used for etching a wafer 10 with a working fluid 20 , and at least includes a soaking mechanism 100 , a rotating motor 200 , a The opening and closing mechanism 300 and at least one liquid injection nozzle 400 are the same as the first embodiment.

浸泡機構100包括一載具110及一環壁120，載具110用於承載晶圓10，環壁120用於圈套於晶圓10之外緣以供盛裝工作流體20並使工作流體20覆蓋晶圓10之表面。載具110包含有一底板101，底板101呈碟形且其頂呈平面，晶圓10則承載於底板101的頂面上。當晶圓10置入環壁120時，載具110及晶圓10皆與環壁120分離，因此載具110及晶圓10能夠獨立作動而不連動環壁120。環壁120設有一止擋組件130以止擋溢出晶圓10表面的工作流體20。止擋組件130包含連通環壁120之內壁面的複數噴氣口132，各噴氣口132分別連通至一正壓氣源以將氣體注入環壁120與晶圓10之間的空隙中，藉此以阻擋工作流體20。環壁120的底緣可以對應空隙的下方設有一環溝122以盛接漏出的工作流體20並進一步回收或排放。The soaking mechanism 100 includes a carrier 110 and a ring wall 120 . The carrier 110 is used to carry the wafer 10 , and the ring wall 120 is used to wrap around the outer edge of the wafer 10 for containing the working fluid 20 and making the working fluid 20 cover the wafer. Surface of 10. The carrier 110 includes a bottom plate 101 , the bottom plate 101 is dish-shaped and its top is flat, and the wafer 10 is carried on the top surface of the bottom plate 101 . When the wafer 10 is placed in the ring wall 120 , the carrier 110 and the wafer 10 are separated from the ring wall 120 , so the carrier 110 and the wafer 10 can operate independently without the ring wall 120 being linked. The ring wall 120 is provided with a stopper component 130 to stop the working fluid 20 overflowing from the surface of the wafer 10 . The stopper assembly 130 includes a plurality of air injection ports 132 communicating with the inner wall surface of the ring wall 120 , and each air injection port 132 is respectively connected to a positive pressure gas source to inject gas into the gap between the ring wall 120 and the wafer 10 , thereby to The working fluid 20 is blocked. The bottom edge of the annular wall 120 may be provided with an annular groove 122 corresponding to the lower part of the gap to receive the leaked working fluid 20 for further recovery or discharge.

旋轉馬達200連動載具110而能夠驅動載具110旋轉，具體而言，載具110直接或間接連接至一旋轉軸210，且旋轉馬達200嚙合旋轉軸210而驅動載具110旋轉，旋轉馬達200可以直接嚙合旋轉軸210或者藉由減速齒輪間接嚙合旋轉軸210。The rotary motor 200 is linked with the carrier 110 to drive the carrier 110 to rotate. Specifically, the carrier 110 is directly or indirectly connected to a rotary shaft 210 , and the rotary motor 200 engages with the rotary shaft 210 to drive the carrier 110 to rotate. The rotary motor 200 The rotary shaft 210 may be directly meshed or indirectly meshed with the rotary shaft 210 through a reduction gear.

開閉機構300連動浸泡機構100以驅動載具110及環壁120相對升降移動而使晶圓10能夠進出環壁120。於本實施例中，開閉機構300包含連接載具110的一第一升降組件310以及連接環壁120的一第二升降組件320。第一升降組件310以及第二升降組件320分別至少包含直立設置的一伸縮桿311/321，伸縮桿311/321可以是電動缸(線性致動器)、液壓缸等動力元件，但本發明不以此限。The opening and closing mechanism 300 is linked with the soaking mechanism 100 to drive the carrier 110 and the ring wall 120 to move up and down relative to each other so that the wafer 10 can enter and exit the ring wall 120 . In this embodiment, the opening and closing mechanism 300 includes a first lifting component 310 connected to the carrier 110 and a second lifting component 320 connected to the ring wall 120 . The first lifting assembly 310 and the second lifting assembly 320 respectively include at least one telescopic rod 311/321 arranged upright. The telescopic rod 311/321 may be a power element such as an electric cylinder (linear actuator), a hydraulic cylinder, etc., but the present invention does not to this limit.

注液噴嘴400用於供應工作流體20，其設置在浸泡機構100的一側且朝向環壁120內配置The liquid injection nozzle 400 is used for supplying the working fluid 20 and is disposed on one side of the soaking mechanism 100 and is disposed toward the inside of the ring wall 120

本發明的晶圓蝕刻裝置，較佳地更包含一排水外槽500，浸泡機構100容置在排水外槽500內。排水外槽500包含相互套疊的複數分流環罩510，各分流環罩510分別環繞浸泡機構100並且該些分流環罩510之中的至少一部份分別連升降機構520而能夠獨立升降，藉此使得相套疊的分流環罩510皆能夠分離。升降機構520可以是電動缸(線性致動器)、液壓缸等動力元件，但本發明不以此限。當相套疊分流環罩510分離時，二者之間的間隙形成排水道501以供工作流體20通過而排出。藉由選擇性地升降該些分流環罩510而能夠開閉各排水道501。當使用多種工作流體20時，各工作流體20可以通過相對應的排水道501分別排除以避免各工作流體20被沾附在排水道501內壁的另一各工作流體20汙染。The wafer etching apparatus of the present invention preferably further includes an outer drain tank 500 , and the soaking mechanism 100 is accommodated in the drain outer tank 500 . The drainage outer tank 500 includes a plurality of shunt ring covers 510 that are nested with each other. Each of the shunt ring covers 510 surrounds the soaking mechanism 100 respectively, and at least a part of the shunt ring covers 510 is connected to the lifting mechanism 520 and can be lifted independently. This enables the overlapping diverter ring housings 510 to be separated. The lifting mechanism 520 may be a power element such as an electric cylinder (linear actuator), a hydraulic cylinder, etc., but the invention is not limited thereto. When the telescopic split ring covers 510 are separated, the gap between the two forms a drainage channel 501 for the working fluid 20 to pass through and be discharged. Each drainage channel 501 can be opened and closed by selectively raising and lowering the diverter ring covers 510 . When multiple working fluids 20 are used, each working fluid 20 can be drained through the corresponding drainage channel 501 to avoid contamination of each working fluid 20 by another working fluid 20 adhering to the inner wall of the drainage channel 501 .

參閱圖8，本發明的晶圓蝕刻裝置使用時，載具110及環壁120先相對升降分離使載具110位為環壁120之外的上方，以便於將晶圓10水平置於載具110上。Referring to FIG. 8 , when the wafer etching apparatus of the present invention is used, the carrier 110 and the ring wall 120 are first lifted and separated relative to each other so that the carrier 110 is positioned above the ring wall 120 , so that the wafer 10 can be placed horizontally on the carrier 110 on.

參閱圖9，接著相對升降載具110及環壁120使將晶圓10移入環壁120內，且載具110的底板101抵壓於密封環131而使底板101閉合環壁120。再以注液噴嘴400將工作流體20注入環壁120內以淹沒環壁120內的晶圓10。藉由旋轉馬達200轉動載具110而帶動晶圓10旋轉以使晶圓10的表面能被適度地蝕刻。Referring to FIG. 9 , the wafer 10 is moved into the ring wall 120 relative to the lifting carrier 110 and the ring wall 120 , and the bottom plate 101 of the carrier 110 is pressed against the sealing ring 131 to close the ring wall 120 . Then, the working fluid 20 is injected into the ring wall 120 by the liquid injection nozzle 400 to submerge the wafer 10 in the ring wall 120 . The carrier 110 is rotated by the rotary motor 200 to drive the wafer 10 to rotate, so that the surface of the wafer 10 can be properly etched.

參閱圖10，蝕刻完成後將載具110及環壁120相對升降分離使晶圓10移出環壁120。環壁120內剩餘的工作流體20則向四周瀉流至排水外槽500內並通過相對應的排水道501排出。Referring to FIG. 10 , after the etching is completed, the carrier 110 and the ring wall 120 are relatively lifted and separated to move the wafer 10 out of the ring wall 120 . The remaining working fluid 20 in the annular wall 120 flows out to the outer drainage groove 500 and is discharged through the corresponding drainage channel 501 .

第二實施例所示為本實施例中開閉機構300的一種配置方式，然而本發明不以此為限。開閉機構300之作用在於驅動載具110及環壁120相對升降，本實例中另列舉數種其他可能的配置方式進一步說明如後。The second embodiment shows a configuration of the opening and closing mechanism 300 in this embodiment, but the present invention is not limited to this. The function of the opening and closing mechanism 300 is to drive the carrier 110 and the ring wall 120 to move up and down relative to each other. In this example, several other possible configuration methods are listed and further described below.

參閱圖11，開閉機構300可以只包含連接載具110的第一升降組件310。藉由第一升降組件310驅動載具110相對於環壁120升降即能夠將晶圓10置入或移出環壁120。Referring to FIG. 11 , the opening and closing mechanism 300 may only include the first lifting component 310 connected to the carrier 110 . By driving the carrier 110 to move up and down relative to the ring wall 120 by the first lift assembly 310 , the wafer 10 can be placed in or moved out of the ring wall 120 .

參閱圖12，開閉機構300可以只包含連接環壁120的第二升降組件320。藉由第二升降組件320驅動環壁120相對於載具110升降即能夠將晶圓10置入或移出環壁120。Referring to FIG. 12 , the opening and closing mechanism 300 may only include the second lifting component 320 connected to the ring wall 120 . By driving the ring wall 120 to move up and down relative to the carrier 110 by the second lift assembly 320 , the wafer 10 can be placed in or removed from the ring wall 120 .

參閱圖13，載具110內可以設置有連通底板頂面面的負壓管路102，藉此以及吸附固定晶圓10。再者，載具110旁可以設置有清潔組件600，清潔組件600較佳地可以是環繞載具110的環體，且清潔組件600上有複數清潔噴嘴601，該些清潔噴嘴601環繞載具110排列，該些清潔噴嘴601上仰對應晶圓的底面配置，且該些清潔噴嘴601的噴射方向外發散。清潔噴嘴601可以用於供應清洗液或是用於吹氣，藉此能夠清洗晶圓10的底面以及將晶圓10底面的上殘留的工作流體20吹向晶圓10的邊緣而排除。清潔組件600與載具110分離不連動且與晶圓10分離配置。Referring to FIG. 13 , the carrier 110 may be provided with a negative pressure pipeline 102 communicating with the top surface of the bottom plate, thereby adsorbing and fixing the wafer 10 . Furthermore, a cleaning component 600 may be disposed beside the carrier 110 , the cleaning component 600 may preferably be a ring body surrounding the carrier 110 , and the cleaning component 600 has a plurality of cleaning nozzles 601 , and the cleaning nozzles 601 surround the carrier 110 Arranged, the cleaning nozzles 601 are upwardly disposed corresponding to the bottom surface of the wafer, and the spraying directions of the cleaning nozzles 601 diverge outward. The cleaning nozzle 601 can be used for supplying cleaning liquid or for blowing air, thereby cleaning the bottom surface of the wafer 10 and blowing the residual working fluid 20 on the bottom surface of the wafer 10 to the edge of the wafer 10 for removal. The cleaning assembly 600 is separated from the carrier 110 without interlocking, and is arranged separately from the wafer 10 .

本發明的晶圓蝕刻裝置其藉由環壁120圈繞晶圓10的邊緣在將工作流體20注入環壁120內再旋轉晶圓10並進行蝕刻。因此使得工作流體20能夠完全覆蓋晶圓10的表面，特別是晶圓10的邊緣，故使蝕刻品質均勻穩定。The wafer etching apparatus of the present invention uses the ring wall 120 to wrap around the edge of the wafer 10, injects the working fluid 20 into the ring wall 120, and then rotates the wafer 10 to perform etching. Therefore, the working fluid 20 can completely cover the surface of the wafer 10 , especially the edge of the wafer 10 , so that the etching quality is uniform and stable.

以上所述僅為本發明之較佳實施例，非用以限定本發明之專利範圍，其他運用本發明之專利精神之等效變化，均應俱屬本發明之專利範圍。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the patent scope of the present invention. Other equivalent changes using the patent spirit of the present invention shall all belong to the patent scope of the present invention.

10:晶圓 20:工作流體 100:浸泡機構 101:底板 102:負壓管路 110:載具 111:夾爪 112:排水面 120:環壁 121:卡榫 122:環溝 130:止擋組件 131:密封環 132:噴氣口 200:旋轉馬達 210:旋轉軸 300:開閉機構 310:第一升降組件 311:伸縮桿 320:第二升降組件 321:伸縮桿 400:注液噴嘴 500:排水外槽 501:排水道 510:分流環罩 520:升降機構 600:清潔組件 601:清潔噴嘴 10: Wafer 20: Working fluid 100: Immersion Mechanism 101: Bottom plate 102: Negative pressure pipeline 110: Vehicle 111: Gripper 112: Drainage surface 120: Ring Wall 121: Tenon 122: Ring groove 130: Stopper assembly 131: sealing ring 132: Jet 200: Rotary Motor 210: Rotary axis 300: Opening and closing mechanism 310: First lift assembly 311: Telescopic rod 320: Second lift assembly 321: Telescopic rod 400: Liquid injection nozzle 500: Drain Outer Slot 501: Drainage 510: Diverter ring cover 520: Lifting mechanism 600: Clean Components 601: Clean Nozzle

圖1及圖2係本發明第一實施例之晶圓蝕刻裝置之示意圖。1 and 2 are schematic diagrams of a wafer etching apparatus according to a first embodiment of the present invention.

圖3至圖4係本發明第一實施例之晶圓蝕刻裝置之使用狀態示意圖。FIG. 3 to FIG. 4 are schematic diagrams of the use states of the wafer etching apparatus according to the first embodiment of the present invention.

圖5及圖6係本發明第一實施例之晶圓蝕刻裝置之變化態樣示意圖。FIG. 5 and FIG. 6 are schematic diagrams of variations of the wafer etching apparatus according to the first embodiment of the present invention.

圖7及圖8係本發明第二實施例之晶圓蝕刻裝置之示意圖。7 and 8 are schematic diagrams of a wafer etching apparatus according to a second embodiment of the present invention.

圖9至圖10係本發明第二實施例之晶圓蝕刻裝置之使用狀態示意圖。FIG. 9 to FIG. 10 are schematic diagrams of the use states of the wafer etching apparatus according to the second embodiment of the present invention.

圖11至圖13係本發明第二實施例之晶圓蝕刻裝置之變化態樣示意圖。11 to FIG. 13 are schematic views of variations of the wafer etching apparatus according to the second embodiment of the present invention.

10:晶圓 10: Wafer

20:工作流體 20: Working fluid

100:浸泡機構 100: Immersion Mechanism

101:底板 101: Bottom plate

110:載具 110: Vehicle

120:環壁 120: Ring Wall

122:環溝 122: Ring groove

130:止擋組件 130: Stopper assembly

132:噴氣口 132: Jet

200:旋轉馬達 200: Rotary Motor

210:旋轉軸 210: Rotary axis

300:開閉機構 300: Opening and closing mechanism

310:第一升降組件 310: First lift assembly

311:伸縮桿 311: Telescopic rod

320:第二升降組件 320: Second lift assembly

321:伸縮桿 321: Telescopic rod

400:注液噴嘴 400: Liquid injection nozzle

500:排水外槽 500: Drain Outer Slot

501:排水道 501: Drainage

510:分流環罩 510: Diverter ring cover

520:升降機構 520: Lifting mechanism

Claims (13)

一種晶圓蝕刻裝置，用於以一工作流體蝕刻一晶圓，包括： 一浸泡機構，包括用於承載所述晶圓的一載具及用於圈套於所述晶圓外緣以供盛裝所述工作流體的一環壁； 一旋轉馬達，連動該載具而能夠驅動該載具旋轉； 一開閉機構，連動該浸泡機構以驅動該載具及該環壁相對移動而使所述晶圓進出該環壁；及 用於供應所述工作流體的一注液噴嘴，設置在該浸泡機構的一側且朝向該環壁內配置。 A wafer etching device for etching a wafer with a working fluid, comprising: a soaking mechanism, comprising a carrier for carrying the wafer and a ring wall for snaring the outer edge of the wafer for containing the working fluid; a rotary motor, which is linked to the carrier to drive the carrier to rotate; an opening and closing mechanism, which is linked with the soaking mechanism to drive the carrier and the ring wall to move relatively so that the wafers enter and leave the ring wall; and A liquid injection nozzle for supplying the working fluid is arranged on one side of the soaking mechanism and is disposed toward the inside of the annular wall. 如請求項1所述的晶圓蝕刻裝置，更包含一排水外槽，該浸泡機構容置在該排水外槽內。The wafer etching apparatus according to claim 1, further comprising an outer drain tank, and the soaking mechanism is accommodated in the drain outer tank. 如請求項2所述的晶圓蝕刻裝置，其中該排水外槽包含相互套疊的複數分流環罩，各該分流環罩分別環繞該浸泡機構並且能夠獨立升降。The wafer etching apparatus according to claim 2, wherein the outer drainage tank includes a plurality of shunt ring covers that are nested with each other, and each of the shunt ring covers surrounds the soaking mechanism and can be lifted and lowered independently. 如請求項1所述的晶圓蝕刻裝置，其中該開閉機構包含連接該載具的一第一升降組件。The wafer etching apparatus of claim 1, wherein the opening and closing mechanism comprises a first lifting component connected to the carrier. 如請求項1所述的晶圓蝕刻裝置，其中該開閉機構包含連接該環壁的一第二升降組件。The wafer etching apparatus of claim 1, wherein the opening and closing mechanism comprises a second lifting component connected to the ring wall. 如請求項1所述的晶圓蝕刻裝置，其中該環壁設有一止擋組件以止擋溢出所述晶圓表面的工作流體。The wafer etching apparatus according to claim 1, wherein the ring wall is provided with a stopper component to stop the working fluid overflowing from the surface of the wafer. 如請求項6所述的晶圓蝕刻裝置，其中該止擋組件包含連通該環壁之內壁面設有複數噴氣口以將氣體注入該環壁與所述晶圓之間的空隙中。The wafer etching apparatus according to claim 6, wherein the stopper component includes a plurality of gas injection ports connected to the inner wall surface of the ring wall to inject gas into the gap between the ring wall and the wafer. 如請求項6所述的晶圓蝕刻裝置，其中該止擋組件包含設置在該環壁的一密封環，該載具包含有一底板，該密封環抵壓於該底板的邊緣。The wafer etching apparatus of claim 6, wherein the stopper component comprises a sealing ring disposed on the ring wall, the carrier comprises a bottom plate, and the sealing ring is pressed against the edge of the bottom plate. 如請求項8所述的晶圓蝕刻裝置，其中該底板的頂面形成凸錐狀的一排水面。The wafer etching apparatus according to claim 8, wherein a top surface of the base plate forms a convex-conical drainage surface. 如請求項8所述的晶圓蝕刻裝置，其中該載具包含立設在該底板頂面的複數夾爪，所述晶圓承載於該些夾爪。The wafer etching apparatus of claim 8, wherein the carrier comprises a plurality of clamping jaws erected on the top surface of the base plate, and the wafer is carried by the clamping jaws. 如請求項1所述的晶圓蝕刻裝置，其中該旋轉馬達連動該環壁而能夠驅動該環壁與該載具同時旋轉。The wafer etching apparatus of claim 1, wherein the rotary motor is linked with the ring wall to drive the ring wall and the carrier to rotate simultaneously. 如請求項1所述的晶圓蝕刻裝置，其中該載具旁設置有環繞該載具的複數清潔噴嘴，該些清潔噴嘴上仰配置。The wafer etching apparatus according to claim 1, wherein a plurality of cleaning nozzles surrounding the carrier are arranged beside the carrier, and the cleaning nozzles are arranged upwardly. 如請求項12所述的晶圓蝕刻裝置，其中該些清潔噴嘴的噴射方向外發散。The wafer etching apparatus of claim 12, wherein the spraying directions of the cleaning nozzles diverge outward.
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