TW202213616A - 用於cvd反應器之運輸環 - Google Patents

用於cvd反應器之運輸環 Download PDF

Info

Publication number
TW202213616A
TW202213616A TW110123925A TW110123925A TW202213616A TW 202213616 A TW202213616 A TW 202213616A TW 110123925 A TW110123925 A TW 110123925A TW 110123925 A TW110123925 A TW 110123925A TW 202213616 A TW202213616 A TW 202213616A
Authority
TW
Taiwan
Prior art keywords
substrate
spacers
annular
gap
axis
Prior art date
Application number
TW110123925A
Other languages
English (en)
Chinese (zh)
Inventor
Ｙ 維德 法蘭西斯科 魯德
馬塞爾 科爾柏格
喬治 夸爾堤爾
亨德里克 勞夫
斯特凡 克雷默
Original Assignee
德商愛思強歐洲公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商愛思強歐洲公司 filed Critical 德商愛思強歐洲公司
Publication of TW202213616A publication Critical patent/TW202213616A/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW110123925A 2020-07-03 2021-06-30 用於cvd反應器之運輸環 TW202213616A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102020117645.7A DE102020117645A1 (de) 2020-07-03 2020-07-03 Transportring für einen CVD-Reaktor
DE102020117645.7 2020-07-03

Publications (1)

Publication Number Publication Date
TW202213616A true TW202213616A (zh) 2022-04-01

Family

ID=76845198

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110123925A TW202213616A (zh) 2020-07-03 2021-06-30 用於cvd反應器之運輸環

Country Status (3)

Country Link
DE (1) DE102020117645A1 (fr)
TW (1) TW202213616A (fr)
WO (1) WO2022002848A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021126019A1 (de) 2021-10-07 2023-04-13 Aixtron Se CVD-Reaktor mit einem Tragring beziehungsweise Tragring für ein Substrat

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5421401A (en) * 1994-01-25 1995-06-06 Applied Materials, Inc. Compound clamp ring for semiconductor wafers
DE10135151A1 (de) 2001-05-29 2002-12-05 Aixtron Ag Aus einem Tragkörper und darauf gasgelagerten und drehangetriebenen Substrathalter bestehende Anordnung
DE10323085A1 (de) 2003-05-22 2004-12-09 Aixtron Ag CVD-Beschichtungsvorrichtung
DE102012106796A1 (de) 2012-07-26 2014-01-30 Aixtron Se Thermische Behandlungsvorrichtung mit einem auf einem Substratträgersockel aufsetzbaren Substratträgerring
KR102528559B1 (ko) 2016-07-26 2023-05-04 삼성전자주식회사 대면적 기판 제조 장치
US20180138074A1 (en) 2016-11-11 2018-05-17 Samsung Electronics Co., Ltd. Carrier ring and chemical vapor deposition apparatus including the same
CN110536976B (zh) * 2017-01-27 2022-03-15 艾克斯特朗欧洲公司 运输环
DE102017101648A1 (de) 2017-01-27 2018-08-02 Aixtron Se Transportring
US20180334746A1 (en) * 2017-05-22 2018-11-22 Lam Research Corporation Wafer Edge Contact Hardware and Methods to Eliminate Deposition at Wafer Backside Edge and Notch
DE102017129699A1 (de) 2017-12-13 2019-06-13 Aixtron Se Vorrichtung zur Halterung und zum Transport eines Substrates
DE102018113400A1 (de) 2018-06-06 2019-12-12 Aixtron Se CVD Reaktor mit Tragring zum Substrathandhaben
DE102019114249A1 (de) 2018-06-19 2019-12-19 Aixtron Se Anordnung zum Messen der Oberflächentemperatur eines Suszeptors in einem CVD-Reaktor

Also Published As

Publication number Publication date
WO2022002848A2 (fr) 2022-01-06
WO2022002848A3 (fr) 2022-03-31
DE102020117645A1 (de) 2022-01-05

Similar Documents

Publication Publication Date Title
TWI684236B (zh) 用以減少邊緣溫度峰値的新式基座設計
TWI649781B (zh) 用於化學氣相沈積之自定中心晶圓載具系統
TWI593042B (zh) The substrate carrier can be placed on the substrate carrier heat treatment device
US6344631B1 (en) Substrate support assembly and processing apparatus
JPH0878347A (ja) エピタキシャル成長装置のサセプタ
CN112513327B (zh) 用于测量cvd反应器中的基座的表面温度的装置
TWM531049U (zh) 具有３４個容置區的排列組態之晶圓載具
JP2021525966A (ja) 基板取扱い用担持リングを有するｃｖｄリアクタ及びｃｖｄリアクタでの担持リングの使用
TW201421608A (zh) Ｃｖｄ裝置的基板架
KR20170048578A (ko) 분위기 에피택셜 퇴적 챔버
TW202213616A (zh) 用於cvd反應器之運輸環
KR20170102020A (ko) 웨이퍼 내의 퇴적 계곡들을 제거하기 위한 신규한 서셉터 설계
CN112424394A (zh) 用于覆盖用于SiC层沉积的装置的基座的指向过程室的侧面的盖板
TW202035779A (zh) Ｃｖｄ反應器之基座
US10718051B2 (en) Methods for chemical vapor deposition (CVD) in a movable liner assembly
KR20150001781U (ko) 히터 조립체
EP3863043A1 (fr) Suscepteur
TW202236477A (zh) 具有在前置區上升之製程室底部的cvd反應器
TW202037753A (zh) 應用於ｃｖｄ反應器中的基板架
JP7077331B2 (ja) 基板キャリア構造体
TW202039904A (zh) Cvd反應器之基板座配置
TW202117060A (zh) 用於cvd反應器的扁平組件
TWI608557B (zh) 晶圓之磊晶反應器及其中央星盤
TW202411464A (zh) 具有支撐環或用於基板之支撐環的cvd反應器
CN113053799B (zh) 基座