TW202211996A - Substrate processing method and substrate processing apparatus - Google Patents
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- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract
Description
本發明係有關於一種基板處理方法以及基板處理裝置。The present invention relates to a substrate processing method and a substrate processing apparatus.
以往使用一種用以逐片地處理基板之葉片式的基板處理裝置。基板處理裝置係對被搬入的未處理的基板進行例如基於藥液等之處理、用以洗淨基板之洗淨處理以及用以使基板乾燥之乾燥處理等各種處理。而且,從基板處理裝置搬出處理完畢的基板,並將下一片未處理的基板搬入至基板處理裝置。如此,基板處理裝置係依序逐片地對基板進行一連串的處理。Conventionally, a blade-type substrate processing apparatus for processing substrates one by one has been used. The substrate processing apparatus performs various processes such as, for example, a process by a chemical solution, a cleaning process for cleaning the substrate, and a drying process for drying the substrate, on the loaded unprocessed substrate. Then, the processed substrate is carried out from the substrate processing apparatus, and the next unprocessed substrate is carried into the substrate processing apparatus. In this way, the substrate processing apparatus sequentially performs a series of processing on the substrates one by one.
專利文獻1揭示了此種基板處理裝置的一例。在專利文獻1中,作為洗淨處理,基板處理裝置係將異丙醇(IPA;isopropyl alcohol)與純水的混合液的液滴噴出至基板的主表面並洗淨基板的主表面。具體而言,基板處理裝置係具備:保持部,係保持基板;用以供給異丙醇之供給管;用以供給純水之供給管;混合管,係供兩個供給管合流;以及噴嘴,係設置於混合管的前端。此外,於各個供給管設置有閥。兩個閥打開,藉此異丙醇以及純水係分別通過供給管被供給至混合管。而且,異丙醇以及純水的混合液係通過混合管從噴嘴朝基板噴出。此外,噴嘴為雙流體噴嘴,不僅供給混合液亦供給氣體。噴嘴係將混合液以細微的液滴狀地噴出。液滴狀的混合液係被噴出至基板,藉此對基板進行洗淨處理。 [先前技術文獻] [專利文獻] Patent Document 1 discloses an example of such a substrate processing apparatus. In Patent Document 1, as a cleaning process, a substrate processing apparatus discharges droplets of a mixed solution of isopropyl alcohol (IPA; isopropyl alcohol) and pure water on the main surface of the substrate to clean the main surface of the substrate. Specifically, the substrate processing apparatus includes: a holding part for holding the substrate; a supply pipe for supplying isopropyl alcohol; a supply pipe for supplying pure water; a mixing pipe for joining the two supply pipes; and a nozzle, It is arranged at the front end of the mixing tube. Moreover, a valve is provided in each supply pipe. The two valves were opened, whereby isopropyl alcohol and pure water were supplied to the mixing pipe through the supply pipe, respectively. Then, the mixed liquid system of isopropyl alcohol and pure water is ejected from the nozzle toward the substrate through the mixing tube. In addition, the nozzle is a two-fluid nozzle, and not only the mixed liquid but also the gas is supplied. The nozzle system ejects the mixed liquid in the form of fine droplets. The liquid mixture system in the form of droplets is ejected onto the substrate, whereby the substrate is cleaned. [Prior Art Literature] [Patent Literature]
[專利文獻1]日本特開2015-133441號公報。[Patent Document 1] Japanese Patent Laid-Open No. 2015-133441.
[發明所欲解決之課題][The problem to be solved by the invention]
在基板處理裝置結束洗淨處理時,停止供給異丙醇、純水以及氣體。藉此,停止從噴嘴噴出混合液。此時,混合液係在混合管內靜止。此外,當異丙醇與純水混合時,會於混合液產生氣泡。由於該氣泡會隨著時間的經過而增加,因此在停止從噴嘴噴出混合液的期間中混合管的內部的氣泡的量亦會隨著時間的經過而增加。When the substrate processing apparatus finishes the cleaning process, the supply of isopropyl alcohol, pure water, and gas is stopped. Thereby, the ejection of the mixed liquid from the nozzle is stopped. At this time, the mixed liquid system is stationary in the mixing tube. In addition, when isopropyl alcohol is mixed with pure water, air bubbles are generated in the mixed liquid. Since the air bubbles increase over time, the amount of air bubbles inside the mixing tube also increases over time while the discharge of the mixed liquid from the nozzle is stopped.
如此,當氣泡增加時,在下一次基板處理裝置從噴嘴噴出混合液時,因為該氣泡導致產生各種問題。例如,因為微粒(particle)聚集在氣泡的周圍等各種因素,會有使微粒附著於基板上之虞。此外,會因為氣泡導致混合液的流量降低。而且,在採用雙流體噴嘴作為噴嘴之情形中,因為混合液的流量降低導致被供給至雙流體噴嘴之混合液相對於氣體之比例降低。結果,增加混合液的液滴的滴勢,從而對基板造成損傷。In this way, when the air bubbles increase, various problems occur due to the air bubbles when the substrate processing apparatus discharges the mixed liquid from the nozzle next time. For example, there is a possibility that the particles may adhere to the substrate due to various factors such as the accumulation of particles around the bubbles. In addition, the flow rate of the mixed solution decreases due to air bubbles. Also, in the case of using the two-fluid nozzle as the nozzle, the ratio of the mixed liquid to the gas supplied to the two-fluid nozzle is reduced because the flow rate of the mixed liquid is reduced. As a result, the drop potential of the droplets of the mixed solution increases, thereby causing damage to the substrate.
因此,本發明係有鑑於上述課題而研創,目的在於提供一種能抑制因為混合液中的氣泡導致產生問題之技術。 [用以解決課題之手段] Therefore, the present invention has been developed in view of the above-mentioned problems, and an object of the present invention is to provide a technique capable of suppressing the occurrence of problems due to air bubbles in the liquid mixture. [means to solve the problem]
第一態樣的基板處理方法係具備:保持工序,係保持基板;混合液供給工序,係將包含水的處理液以及異丙醇分別通過第一供給管以及第二供給管並供給至混合管,將混合了前述處理液以及前述異丙醇的混合液通過前述混合管從噴嘴噴出至前述基板;以及置換工序,係在前述混合液供給工序之後,供給屬於前述處理液以及前述異丙醇中的任一者之置換液,以前述置換液推出前述混合管中的前述混合液並使前述混合液從前述噴嘴噴出,從而將前述混合液置換成前述置換液。The substrate processing method according to the first aspect includes: a holding step of holding the substrate; and a mixed solution supply step of supplying a treatment solution containing water and isopropyl alcohol to the mixing tube through a first supply pipe and a second supply pipe, respectively a mixed liquid mixed with the treatment liquid and the isopropyl alcohol is ejected from the nozzle to the substrate through the mixing pipe; and a replacement step is performed after the mixed liquid supply step, and is supplied to the treatment liquid and the isopropyl alcohol. In any one of the replacement liquids, the mixed liquid in the mixing tube is pushed out by the replacement liquid and the mixed liquid is ejected from the nozzle, thereby replacing the mixed liquid with the replacement liquid.
第二態樣的基板處理方法係如第一態樣所記載之基板處理方法,其中在前述混合液供給步驟之後進一步具備:乾燥工序,係使前述基板乾燥;前述置換工序係在前述混合液供給工序之後開始,直至前述乾燥工序結束為止。The substrate processing method according to the second aspect is the substrate processing method according to the first aspect, further comprising after the mixed solution supplying step: a drying step for drying the substrate; and the replacement step when the mixed solution is supplied It starts after the process until the above-mentioned drying process is completed.
第三態樣的基板處理方法係如第一態樣或者第二態樣所記載之基板處理方法,其中在前述置換工序中,在前述混合液供給工序之後在基準時間內未被供給前述混合液時,供給前述置換液並將前述混合管中的前述混合液置換成前述置換液。The substrate processing method of the third aspect is the substrate processing method according to the first aspect or the second aspect, wherein in the replacement step, the mixed solution is not supplied within the reference time after the mixed solution supply step When the above-mentioned substitution liquid is supplied, the above-mentioned mixed liquid in the above-mentioned mixing tube is replaced with the above-mentioned substitution liquid.
第四態樣的基板處理方法係如第三態樣所記載之基板處理方法,其中前述基準時間係前述混合液中的前述異丙醇的濃度越高則被設定地越短。The substrate processing method of the fourth aspect is the substrate processing method described in the third aspect, wherein the reference time is set to be shorter as the concentration of the isopropyl alcohol in the mixed solution is higher.
第五態樣的基板處理方法係如第一態樣所記載之基板處理方法,其中進一步具備:檢測工序,係藉由氣泡檢測部檢測前述混合管中的氣泡;前述置換工序係在藉由前述氣泡檢測部所檢測到的氣泡的量比容許量還大時,供給前述置換液並將前述混合管中的前述混合液置換成前述置換液。The substrate processing method of the fifth aspect is the substrate processing method described in the first aspect, further comprising: a detection step of detecting air bubbles in the mixing tube by a bubble detection unit; When the amount of air bubbles detected by the air bubble detection unit is larger than the allowable amount, the replacement liquid is supplied to replace the mixed liquid in the mixing tube with the replacement liquid.
第六態樣的基板處理方法係如第一態樣至第五態樣中任一態樣所記載之基板處理方法,其中前述混合液係包含藉由混合前述處理液與前述異丙醇所產生的氣泡。The substrate processing method of a sixth aspect is the substrate processing method as described in any one of the first aspect to the fifth aspect, wherein the mixed liquid comprises a mixture produced by mixing the processing liquid and the isopropyl alcohol of air bubbles.
第七態樣的基板處理方法係如第一態樣至第六態樣中任一態樣所記載之基板處理方法,其中在前述置換工序中,在已使前述噴嘴移動至俯視觀看時比前述基板還外側的待機退避位置之狀態下,供給前述置換液並將前述混合液置換成前述置換液。The substrate processing method of a seventh aspect is the substrate processing method described in any one of the first to sixth aspects, wherein in the replacement step, the nozzle is moved to a plan view compared to the substrate processing method. In the state of the standby retreat position outside the substrate, the replacement liquid is supplied and the mixed liquid is replaced with the replacement liquid.
第八態樣的基板處理方法係如第一態樣至第七態樣中任一態樣所記載之基板處理方法,其中在前述置換工序中,反復供給前述置換液以及停止供給前述置換液,並將前述混合液置換成前述置換液。The substrate processing method of an eighth aspect is the substrate processing method according to any one of the first aspect to the seventh aspect, wherein in the replacement step, the supply of the replacement liquid and the supply of the replacement liquid are repeated, The aforementioned mixed liquid is replaced with the aforementioned replacement liquid.
第九態樣的基板處理方法係如第一態樣至第八態樣中任一態樣所記載之基板處理方法,其中在前述置換工序中,以比前述混合液供給工序中的前述混合液的流量還大的流量供給前述置換液。The substrate processing method of a ninth aspect is the substrate processing method according to any one of the first to eighth aspects, wherein in the replacement step, the mixed liquid in the mixed liquid supply step is The flow rate is also large to supply the aforementioned replacement fluid.
第十態樣的基板處理方法係如第一態樣至第九態樣中任一態樣所記載之基板處理方法,其中前述置換液為前述處理液。The substrate processing method of the tenth aspect is the substrate processing method described in any one of the first aspect to the ninth aspect, wherein the replacement liquid is the processing liquid.
第一態樣的基板處理裝置係具備:基板保持部,係保持基板;混合液供給部,係包含:噴嘴;第一供給管,係被供給有包含水的處理液;第二供給管,係被供給有異丙醇; 以及混合管,係將從前述第一供給管所供給的前述處理液以及從前述第二供給管所供給的前述異丙醇的混合液供給至前述噴嘴;以及控制部,係以下述方式控制前述混合液供給部:結束從前述噴嘴噴出前述混合液後,將屬於前述處理液以及前述異丙醇中的任一者之置換液供給至前述混合管,以前述置換液推出前述混合管中的前述混合液並使前述混合液從前述噴嘴噴出,從而以前述置換液置換前述混合液。 [發明功效] The substrate processing apparatus according to the first aspect includes: a substrate holding part for holding the substrate; a mixed liquid supply part including a nozzle; a first supply pipe to which a processing liquid containing water is supplied; and a second supply pipe being supplied with isopropyl alcohol; and a mixing pipe for supplying a mixed liquid of the treatment liquid supplied from the first supply pipe and the isopropyl alcohol supplied from the second supply pipe to the nozzle; and a control unit is controlled by the mixed solution supply unit in such a manner that after the discharge of the mixed solution from the nozzle is completed, a replacement solution belonging to either the treatment solution or the isopropyl alcohol is supplied to the mixing tube, and the replacement solution is supplied with the replacement solution. The mixed liquid in the mixing tube is pushed out and the mixed liquid is ejected from the nozzle to replace the mixed liquid with the replacement liquid. [Inventive effect]
依據第一態樣的基板處理方法以及第一態樣的基板處理裝置,藉由混合液供給工序,於混合管的內部包含有處理液以及異丙醇的混合液。於混合液會因為氣體對於處理液以及異丙醇之溶解度的差而產生氣泡。由於氣泡的量會隨著時間的經過而增加,因此氣泡的量會隨著混合液供給工序後的時間經過而增加。According to the substrate processing method of the first aspect and the substrate processing apparatus of the first aspect, the mixed liquid of the processing liquid and the isopropyl alcohol is contained in the mixing tube through the mixed liquid supply step. In the mixed liquid, bubbles will be generated due to the difference in the solubility of the gas to the treatment liquid and isopropanol. Since the amount of air bubbles increases with time, the amount of air bubbles increases with time after the mixed solution supply step.
在置換工序中,於混合液供給工序之後,混合管的內部的混合液係被置換成置換液。因此,能抑制混合管的內部中產生氣泡。從而,能在接下來的混合液供給工序中抑制因為氣泡導致產生問題。In the replacement step, after the mixed liquid supply step, the mixed liquid system inside the mixing tube is replaced with the replacement liquid. Therefore, the generation of air bubbles in the inside of the mixing tube can be suppressed. Therefore, it is possible to suppress the occurrence of problems due to air bubbles in the subsequent mixed solution supply step.
依據第二態樣的基板處理方法,於混合液供給工序之後,在較早的時間點(timing)進行置換工序。因此,在氣泡的量小的狀態下置換液推出混合液以及氣泡並使混合液以及氣泡從噴嘴噴出。由於氣泡的量小,因此容易使氣泡從噴嘴排出。According to the substrate processing method of the second aspect, the replacement step is performed at an earlier timing after the mixed solution supply step. Therefore, in a state where the amount of air bubbles is small, the replacement liquid pushes out the mixed liquid and air bubbles, and ejects the mixed liquid and air bubbles from the nozzle. Since the amount of air bubbles is small, it is easy to discharge air bubbles from the nozzle.
依據第三態樣的基板處理方法,在於混合液供給工序之後的基準時間內未供給混合液時,混合管的內部的混合液係被置換成置換液。因此,在氣泡的量因為基準時間的經過而變大之情形中,混合管的內部的混合液係被置換成置換液。According to the substrate processing method of the third aspect, when the mixed liquid is not supplied within the reference time after the mixed liquid supply step, the mixed liquid system inside the mixing tube is replaced with the replacement liquid. Therefore, when the amount of air bubbles increases due to the elapse of the reference time, the mixed liquid system inside the mixing tube is replaced with the replacement liquid.
依據第四態樣的基板處理方法,能抑制不必要的置換工序的執行。According to the substrate processing method of the fourth aspect, execution of an unnecessary replacement step can be suppressed.
依據第五態樣的基板處理方法,其中在置換工序中,在氣泡的量比容許量還大之情形中,混合管的內部的混合液係被置換成置換液。因此,能抑制之後在混合管的內部產生氣泡。從而,能抑制接下來的混合液供給工序中因為氣泡導致產生問題。此外,由於檢測氣泡,因此能更確實地抑制不必要的推出處理的執行。According to the substrate processing method of the fifth aspect, in the replacement step, when the amount of air bubbles is larger than the allowable amount, the mixed liquid system inside the mixing tube is replaced with the replacement liquid. Therefore, the generation of air bubbles in the mixing tube afterward can be suppressed. Therefore, it is possible to suppress the occurrence of problems due to air bubbles in the subsequent mixed solution supply step. In addition, since air bubbles are detected, execution of unnecessary push-out processing can be suppressed more reliably.
依據第六態樣的基板處理方法,能避免朝基板供給不必要的混合液以及置換液。According to the substrate processing method of the sixth aspect, unnecessary supply of the mixed liquid and the replacement liquid to the substrate can be avoided.
依據第七態樣的基板處理方法,能更適當地排出混合管內的氣泡。According to the substrate processing method of the seventh aspect, air bubbles in the mixing tube can be more appropriately discharged.
依據第八態樣的基板處理方法,能更適當地排出混合管內的氣泡。According to the substrate processing method of the eighth aspect, air bubbles in the mixing tube can be more appropriately discharged.
依據第九態樣的基板處理方法,採用包含溶解度比異丙醇還小的水之處理液作為置換液。藉此,在混合液將混合管的內部的處理液推出並排出時,在混合液與處理液之間的交界難以產生氣泡。According to the substrate processing method of the ninth aspect, the processing liquid containing water having a solubility lower than that of isopropyl alcohol is used as the replacement liquid. Thereby, when the mixed liquid pushes out and discharges the processing liquid inside the mixing tube, bubbles are less likely to be generated at the boundary between the mixed liquid and the processing liquid.
以下參照隨附的圖式說明實施形態。此外,圖式為概略性地顯示之圖,為了方便說明,在圖式中適當地將構成省略或者將構成簡化。此外,圖式所示的構成的大小以及位置的相互關係並未正確地記載,會適當地變更。Embodiments are described below with reference to the accompanying drawings. In addition, the drawings are schematically shown, and for convenience of description, the configuration is appropriately omitted or simplified in the drawings. In addition, the mutual relationship of the magnitude|size and position of the structure shown in a figure is not described correctly, and it will change suitably.
此外,在以下所示的說明中,於同樣的構成要素附上相同的元件符號來圖示,且這些構成要素的名稱以及功能皆視為相同。因此,會有為了避免重複而省略這些構成要素的詳細說明之情形。In addition, in the description shown below, the same components are attached with the same reference numerals and shown in the drawings, and the names and functions of these components are regarded as the same. Therefore, the detailed description of these constituent elements may be omitted in order to avoid repetition.
此外,在以下所記載的說明中,即使在使用了「第一」或者「第二」等排序數字之情形中,這些用語亦為為了容易理解實施形態的內容而適宜使用的用語,而非是限定於這些排序數字所產生的順序等。In addition, in the description described below, even when a sequence number such as "first" or "second" is used, these terms are terms that are appropriately used in order to facilitate the understanding of the content of the embodiment, and are not Limited to the order generated by these sorted numbers, etc.
只要未特別地說明,則用以表示相對性或者絕對性的位置關係之表現(例如「朝一方向」、「沿著一方向」、「平行」、「正交」、「中心」、「同心」以及「同軸」等)係不僅嚴密地表示所指稱的位置關係,亦表示在公差或者能獲得相同程度的功能之範圍內角度或者距離已相對性地位移的狀態。只要未特別地說明,則用以表示相等的狀態之表現(例如「相同」、「相等」以及「均質」等)係不僅表示定量地且嚴密地相等的狀態,亦表示存在公差或者能獲得相同程度的功能之誤差的狀態。只要未特別地說明,則用以表示形狀之表現(例如「四角形狀」或者「圓筒形狀」等)係不僅幾何學性地且嚴密地表示所指稱的形狀,亦表示在能獲得相同程度的功效的範圍內具有例如凹凸或者導角等的形狀。「具備」、「具有」、「具備有」、「含有」或者「包含」一個構成要素之此種表現並非是將其他的構成要素的存在排除之排他式的表現。「A、B以及C的至少一者」之此種表現係包含只有A、只有B、只有C、A至C中的任兩者的組合、A至C全部。Unless otherwise specified, it is used to express the expression of relative or absolute positional relationship (for example, "towards one direction", "along one direction", "parallel", "orthogonal", "center", "concentric" and "coaxial", etc.) not only strictly express the indicated positional relationship, but also express a state in which the angle or distance has been relatively displaced within a tolerance or a range in which the same degree of function can be obtained. Unless otherwise specified, expressions used to indicate the state of equality (such as "same", "equal", "homogeneous", etc.) not only indicate the state of quantitative and exact equality, but also indicate that there is a tolerance or that the same can be obtained The state of the functional error of the degree. Unless otherwise specified, expressions used to express shapes (such as "square shape" or "cylindrical shape") not only geometrically and strictly express the indicated shape, but also express the same degree of There are shapes such as unevenness or chamfering within the range of efficacy. The expression "having", "having", "having", "containing" or "containing" one element is not an exclusive expression that excludes the existence of other elements. This expression of "at least one of A, B, and C" includes only A, only B, only C, a combination of any two of A to C, and all of A to C.
[第一實施形態]
[基板處理裝置的概略構成]
圖1係概略性地顯示基板處理裝置100的構成的一例之圖。如圖1所示,基板處理裝置100係例如為葉片式的裝置,能使用於用以去除附著於作為基板的一例之半導體基板(晶圓)W的表面的有機系的殘渣之處理。作為有機系的殘渣,例如包含有:用以對基板W的表面植入雜質之離子植入處理等之後殘留於基板W的表面而變成不需要的阻劑(resist);或者,源自附著於基板W的表面中的外周部附近的阻劑等之有機系的不要物質等。此外,基板處理裝置100亦能使用於無機系的殘渣去除以及基板W的蝕刻。
[First Embodiment]
[Schematic Configuration of Substrate Processing Apparatus]
FIG. 1 is a diagram schematically showing an example of the configuration of a
基板處理裝置100係包含:裝載埠(load port)LP,係作為收容器保持機構,用以保持作為收容器的複數個承載器(carrier)C;以及複數個(在本實施形態中為十二個)處理單元10,係處理基板W。具體而言,例如以於鉛直方向層疊之方式配置有三組處理單元10,三組處理單元10係分別由平面性地配置的四個處理單元10所構成。The
基板處理裝置100係例如進一步包含索引機器人IR(indexer robot)、中心機器人(center robot)CR以及控制部90。索引機器人IR係例如能在裝載埠LP與中心機器人CR之間搬運基板W。中心機器人CR係例如能在索引機器人IR與各個處理單元10之間搬運基板W。控制部90係能控制基板處理裝置100所具備的各部的動作以及閥的開閉等。The
在此,如圖1所示,裝載埠LP與各個處理單元10係隔著間隔配置於水平方向。在裝載埠LP中,用以收容複數片基板W之複數個承載器C係在俯視觀看時沿著水平的排列方向D排列。裝載埠LP係作為用以搬入基板W之搬入部而發揮作用。在此,索引機器人IR係例如能從承載器C將複數片基板W逐片地搬運至基板載置部110,並能從基板載置部110將複數片基板W逐片地搬運至承載器C。基板載置部110係包含用以載置基板W之載置台。Here, as shown in FIG. 1 , the load port LP and each
中心機器人CR係例如能從基板載置部110將複數片基板W逐片地搬運至各個處理單元10,並能從各個處理單元10將複數片基板W逐片地搬運至基板載置部110。此外,例如中心機器人CR係能因應需要在複數個處理單元10之間搬運基板W。索引機器人IR、基板載置部110以及中心機器人CR係作為基板接取傳遞部而發揮作用,用以從搬入部(裝載埠LP)接取基板W並傳遞至處理單元10。The center robot CR system can, for example, transfer a plurality of substrates W from the
在圖1的例子中,索引機器人IR係具有俯視觀看時為U字狀的手部H。在此,索引機器人IR係具有兩個手部H。兩個手部H係配置於彼此不同的高度。各個手部H係能以水平的姿勢支撐基板W。索引機器人IR係能使手部H於水平方向以及鉛直方向移動。在此,索引機器人IR係將沿著鉛直方向的軸作為中心旋轉(自轉),藉此能變更手部H的朝向。索引機器人IR係在通過接取傳遞位置(在圖1中描繪有索引機器人IR之位置)之路徑中沿著排列方向D移動。接取傳遞位置為在俯視觀看時索引機器人IR與基板載置部110於與排列方向D正交之方向中對向之位置。索引機器人IR係能分別使手部H與任意的承載器C以及基板載置部110對向。在此,例如,索引機器人IR係使手部H移動,藉此能進行用以將基板W搬入至承載器C之搬入動作以及用以從承載器C搬出基板W之搬出動作。此外,例如索引機器人IR係在接取傳遞位置中使手部H移動,藉此能進行用以將基板W搬入至基板載置部110之搬入動作以及用以從基板載置部110搬出基板W之搬出動作。In the example of FIG. 1, the index robot IR system has a U-shaped hand H in a plan view. Here, the index robot IR system has two hands H. The two hands H are arranged at different heights from each other. Each of the hands H can support the substrate W in a horizontal posture. The index robot IR system can move the hand H in the horizontal direction and the vertical direction. Here, the index robot IR system can change the orientation of the hand H by rotating (autorotating) the axis along the vertical direction as the center. The indexing robot IR moves along the arrangement direction D in the path through the pick-up transfer position (where the indexing robot IR is depicted in FIG. 1 ). The pick-up and transfer position is a position at which the index robot IR and the
在圖1的例子中,與索引機器人IR同樣地,中心機器人CR係具有俯視觀看時為U字狀的手部H。在此,中心機器人CR係具有兩個手部H。兩個手部H係配置於彼此不同的高度。各個手部H係能以水平的姿勢支撐基板W。中心機器人CR係能使各個手部H於水平方向以及鉛直方向移動。在此,中心機器人CR係將沿著鉛直方向的軸作為中心旋轉(自轉),藉此能變更手部H的朝向。中心機器人CR係在俯視觀看時被複數個處理單元10圍繞。中心機器人CR係能使手部H與任意的處理單元10以及基板載置部110對向。在此,例如,中心機器人CR係使手部H移動,藉此能進行用以將基板W搬入至各個處理單元10之搬入動作以及用以從各個處理單元10搬出基板W之搬出動作。此外,例如中心機器人CR係使手部H移動,藉此能進行用以將基板W搬入至基板載置部110之搬入動作以及用以從基板載置部110搬出基板W之搬出動作。In the example of FIG. 1 , like the index robot IR, the center robot CR system has a U-shaped hand H in a plan view. Here, the center robot CR system has two hands H. The two hands H are arranged at different heights from each other. Each of the hands H can support the substrate W in a horizontal posture. The center robot CR system can move each hand H in the horizontal direction and the vertical direction. Here, the center robot CR system can change the orientation of the hand H by rotating (autorotating) the axis along the vertical direction as the center. The central robot CR is surrounded by a plurality of
未處理的基板W係藉由索引機器人IR從承載器C被取出,經由基板載置部110被傳遞至中心機器人CR。中心機器人CR係將此未處理的基板W搬入至處理單元10。處理單元10係對基板W進行處理。處理完畢的基板W係藉由中心機器人CR從處理單元10被取出,並因應需要經由其他的處理單元10且通過基板載置部110被傳遞至索引機器人IR。索引機器人IR係將處理完畢的基板W搬入至承載器C。藉由上述動作,對基板W進行處理。The unprocessed substrate W is taken out from the carrier C by the index robot IR, and is transferred to the center robot CR via the
[處理單元]
圖2係概略性地顯示處理單元10的構成的一例之側視圖。處理單元10係具備屬於基板保持部的一例之自轉夾具(spin chuck)20、混合液供給部30、藥液供給部70、清洗(rinse)液供給部80以及處理罩(processing cup)40。
[processing unit]
FIG. 2 is a side view schematically showing an example of the configuration of the
[自轉夾具]
自轉夾具20係水平姿勢地保持基板W。所謂水平姿勢係指基板W的厚度方向沿著鉛直方向之姿勢。自轉夾具20係具備:圓板形狀的自轉基座(spin base)21,係以水平姿勢被固定於沿著鉛直方向延伸的旋轉軸24的上端。於自轉基座21的下方設置有用以使旋轉軸24旋轉之自轉馬達(spin motor)22。自轉馬達22係經由旋轉軸24使自轉基座21於水平面內旋轉。此外,以圍繞自轉馬達22以及旋轉軸24的周圍之方式設置有筒狀的蓋(cover)構件23。
[Rotation fixture]
The
圓板形狀的自轉基座21的外徑係比被自轉夾具20保持的圓形的基板W的直徑稍大。因此,自轉基座21係具有與應被保持的基板W的下表面的整面對向之上表面21a。The outer diameter of the disk-shaped
於自轉基座21的上表面21a的周緣部豎立地設置有複數個(在本實施形態中為四個)夾具銷(chuck pin)26。複數個夾具銷26係隔著均等的間隔(如本實施形態所示,若為四個夾具銷26則為90°間隔)沿著與圓形的基板W的周緣對應之圓周上配置。各個夾具銷26係能夠驅動地設置於保持位置與開放位置之間,保持位置為抵接至基板W的周緣之位置,開放位置為已從基板W的周緣離開之位置。複數個夾具銷26係藉由被收容於自轉基座21內的未圖示的連桿(link)機構而被連動地驅動。自轉夾具20係使複數個夾具銷26在各自的抵接位置處停止,藉此能在自轉基座21的上方以接近至上表面21a的水平姿勢保持該基板W(參照圖2);自轉夾具20係使複數個夾具銷26在各自的開放位置處停止,藉此能解除基板W的保持。A plurality of (four in the present embodiment) chuck pins 26 are erected on the peripheral edge portion of the
自轉馬達22係被蓋構件23圍繞。蓋構件23的上端部係位於自轉基座21的正下方。於蓋構件23的上端部設置有鍔狀構件25,鍔狀構件25係從蓋構件23朝外側方向大致水平地伸出並進一步地朝下方彎曲地延伸。在自轉夾具20藉由複數個夾具銷26所為的把持而保持了基板W的狀態下,自轉馬達22使旋轉軸24旋轉,藉此能使基板W繞著沿著通過基板W的中心之鉛直方向的旋轉軸線CX旋轉。此外,自轉馬達22的驅動係被控制部90控制。The
[混合液供給部]
混合液供給部30係朝向被自轉夾具20保持的基板W供給混合液(後述)。在此,混合液供給部30係具備:噴嘴31,係使氣體碰撞至混合液並生成混合液的液滴且噴出混合液的液滴。
[Mixed solution supply part]
The mixed
圖3係概略性地顯示噴嘴31的構成的一例之縱剖視圖。噴嘴31為所謂的外部混合型的雙流體噴嘴,用以在噴嘴31的罩殼(casing)外部使氣體碰撞至混合液並生成混合液的液滴;噴嘴31係具備:外筒301,係構成罩殼;以及內筒302,係內嵌於外筒301。FIG. 3 is a longitudinal cross-sectional view schematically showing an example of the configuration of the
外筒301以及內筒302皆呈圓筒狀的外形且同軸狀地配置,同軸狀係共同具有中心軸L。此外,外筒301的下端面301a係成為與中心軸L正交之環狀的面。Both the
於內筒302形成有沿著中心軸L之直線狀的內部空間303。內部空間303係在內筒302的下端圓形地呈開口。於內部空間303的上端連接有後述的混合管323(亦參照圖4)。從混合管323供給的混合液係流入至內部空間303並從下端的開口304被噴出(沿著中心軸L朝下方噴出)。亦即,內部空間303為混合液的流路,開口304為混合液的噴出口。以下亦將內部空間303稱為「混合液流路303」。此外,亦將內部空間303的下端的開口304稱為「混合液噴出口304」。A linear
內筒302係具備大徑部分302a以及小徑部分302b,小徑部分302b係連續地設置於大徑部分302a的下方且外徑比大徑部分302a還小。內嵌於內筒302的外側之外筒301的內徑係與大徑部分302a的外徑相等,外筒301係排除外筒301的下端部分外具有大致固定的內徑。因此,於小徑部分302b的外壁與外筒301的內壁之間形成有間隙305。間隙305為將中心軸L作為中心之剖面環狀的空間,且在外筒301的下端環狀(亦即,圍繞混合液噴出口304之環狀)地呈開口。The
於間隙305的上端附近連通有L字形的導入管306的一端,導入管306係將外筒301的內表面與外表面貫通地設置。於導入管306的另一端連接有氣體供給管331,氣體供給管331係與後述的氣體供給源335(亦參照圖4)連接。從氣體供給源335經由氣體供給管331以及導入管306被供給的氣體係流入至間隙305並從下端的開口307被噴出。亦即,間隙305為氣體的流路,開口307為氣體的噴出口。以下亦將間隙305稱為「氣體流路305」。此外,亦將間隙305的下端的開口307稱為「氣體噴出口307」。One end of an L-shaped
於小徑部分302b的下端附近形成有凸緣(flange)308,凸緣308係從小徑部分302b的外周面朝向徑方向外側方向伸出。於凸緣308形成有貫通凸緣308之貫通孔309;流入至氣體流路305的氣體係在通過貫通孔309時變換流動的方向,並成為以繞著中心軸L迴旋之方式流動的迴旋流。A
於小徑部分302b中之比形成有凸緣308之部分還下側的部分形成有圓筒狀的短筒部310,短筒部310係從凸緣308的下側面沿著中心軸L突出。短筒部310係以短筒部310的中心軸與中心軸L一致之方式配置。短筒部310的外徑係比外筒301的下端面301a的內緣徑還小,於短筒部310的下端面與外筒301的下端面301a之間形成有圍繞中心軸L之環狀的開口307。開口307係形成為使間隙(亦即氣體流路)305連通於外部空間之開口(亦即氣體噴出口)307。A cylindrical short
已流入至氣體流路305的氣體係在通過形成於凸緣308的貫通孔309時成為迴旋流並流入至短筒部310的周圍的空間311。在此,外筒301的內壁面中之圍繞短筒部310的周圍之部分係形成為縮徑形狀,縮徑形狀係越朝向下方則內徑越變小。因此,流入至短筒部310的周圍的空間311之氣體的迴旋流係在空間311內成為隨著迴旋而接近中心軸L之漩渦狀的氣流並從氣體噴出口307被噴出。從氣體噴出口307噴出的漩渦狀的氣流係以圍繞從混合液噴出口304沿著中心軸L噴出的混合液之方式流動,並以收斂於中心軸L的某個點F之方式行進。以下亦將點F稱為「收斂點F」。The gas system that has flowed into the
當從混合液噴出口304噴出混合液並從氣體噴出口307噴出氣體時,在噴嘴31的外部空間(具體而言為收斂點F以及收斂點F的附近)中混合液與氣體碰撞並混合,藉此混合液成為細微的液滴。亦即,生成混合液的液滴。所生成的混合液的液滴係被氣體的氣流加速而成為噴流。亦即,在收斂點F的下方中氣體係成為隨著迴旋而一邊從中心軸L遠離一邊朝向下方之漩渦狀的氣流,液滴係被此氣流加速從而朝向基板W噴射。When the mixed liquid is ejected from the mixed
圖4係概略性地顯示混合液供給部30的構成的一例之圖。於噴嘴31連接有屬於配管系統的混合液配管系統32,混合液配管系統32係用以將混合液供給至噴嘴31。混合液配管系統32係包含第一供給管321、第二供給管322、混合管323以及混合部324。FIG. 4 is a diagram schematically showing an example of the configuration of the mixed
第一供給管321的上游端係連接於第一處理液供給源3214,第一供給管321的下游端係連接於混合部324。第一處理液供給源3214為第一處理液的供給源。第一處理液為包含水的處理液,例如為純水(DIW(deionized water;去離子水))或者二氧化碳水(CO
2水)。以下採用純水作為第一處理液來說明。
The upstream end of the
於第一供給管321設置有供給閥3211。供給閥3211係切換第一供給管321的流路的開閉。如圖4的例示所示,亦可於第一供給管321設置有流量調整閥3212以及流量計3213。流量調整閥3212係調整於第一供給管321流動的純水的流量。流量計3213係檢測於第一供給管321流動的純水的流量。A
第二供給管322的上游端係連接於第二處理液供給源3224,第二供給管322的下游端係連接於混合部324。第二處理液供給源3224為第二處理液的供給源。第二處理液為與第一處理液不同種類的處理液,例如為異丙醇(IPA)。以下採用異丙醇作為第二處理液來說明。The upstream end of the
於第二供給管322設置有供給閥3221。供給閥3221係切換第二供給管322的流路的開閉。如圖4的例示所示,亦可於第二供給管322設置有流量調整閥3222以及流量計3223。流量調整閥3222係調整於第二供給管322流動的異丙醇的流量。流量計3223係檢測於第二供給管322流動的第二處理液的流量。A
混合部324係混合從第一供給管321供給的純水以及從第二供給管322供給的異丙醇。混合部324係例如為混合閥。The
混合管323的上游端係連接於混合部324,混合管323的下游端係連接於噴嘴31(具體而言為內部空間303的上端)。來自混合部324的混合液係於混合管323流動並供給至噴嘴31。在圖4的例子中,於混合管323設置有供給閥3231。供給閥3231係切換混合管323的流路的開閉。The upstream end of the mixing
於噴嘴31亦連接有屬於配管系統的氣體配管系統33,氣體配管系統33係用以對噴嘴31供給氣體。氣體配管系統33係包含氣體供給管331。氣體供給管331的下游端係連接於噴嘴31(具體而言為噴嘴31的導入管306),氣體供給管331的上游端係連接於氣體供給源335。氣體供給源335為用以供給氣體(在此例如為氮氣(N
2)氣體)之供給源。氣體供給源335亦可供給氮氣氣體以外的氣體(例如氮氣氣體以外的各種惰性氣體、乾燥空氣等)。
A
於氣體供給管331設置有供給閥332。供給閥332係切換氣體供給管331的流路的開閉。如圖4的例示所示,亦可於氣體供給管331設置有流量調整部333以及過濾器334。流量調整部333係調整於氣體供給管331流動的氣體的流量。流量調整部333係例如為質量流量控制器(Mass Flow Controller)。過濾器334係去除於氣體供給管331流動的氣體的雜質。A
在上述構成中,當供給閥3211、供給閥3221、供給閥3231以及供給閥332打開時,從第一處理液供給源3214供給的純水與從第二處理液供給源3224供給的異丙醇之混合液以及從氣體供給源335供給的氮氣氣體係被供給至噴嘴31。而且,混合液與氮氣氣體在噴嘴31被混合,混合液係成為細微的液滴,該液滴係成為噴流從噴嘴31被噴出。In the above configuration, when the
混合液供給部30係適當地控制供給閥3211、供給閥3221、供給閥3231以及供給閥332的開閉狀態,藉此能單獨地將純水或者異丙醇供給至基板W。例如,在供給閥3221以及供給閥332關閉的狀態下供給閥3211以及供給閥3231打開,藉此從噴嘴31噴出液柱狀的純水。此外,當在此狀態下供給閥332打開時,從噴嘴31噴出液滴狀的純水。同樣地,在供給閥3211以及供給閥332關閉的狀態下供給閥3221以及供給閥3231打開,藉此從噴嘴31噴出液柱狀的異丙醇。此外,當在此狀態下供給閥332打開時,從噴嘴31噴出液滴狀的異丙醇。The mixed
供給閥3211、供給閥3221、供給閥3231以及供給閥332各者係與控制部90電性地連接,並在控制部90的控制下被開閉。流量計3213以及流量計3223各者亦與控制部90電性地連接,各者的檢測結果係被輸出至控制部90。流量調整閥3212以及流量調整閥3222各者亦與控制部90電性地連接。控制部90係基於流量計3213的檢測結果來控制流量調整閥3212的開放度,並基於流量計3223的檢測結果來控制流量調整閥3222的開放度。藉此,調整純水以及異丙醇的流量。流量調整部333係與控制部90電性地連接,並在控制部90的控制下調整氣體的流量。藉此,來自噴嘴31的處理液的噴出態樣(具體而言為噴出開始時序、噴出結束時序、噴出的處理液的種類、噴出流量、噴出的液滴的噴勢等)係被控制部90控制。The
再次參照圖2,噴嘴31的噴出方向(中心軸L)係沿著鉛直方向配置。此外,噴嘴31亦可以噴嘴31的噴出方向相對於鉛直方向呈傾斜之方式配置。例如,噴嘴31亦可以俯視觀看時能從比基板W的中央部還遠離的位置朝向基板W的中央部噴出混合液之方式傾斜地配置。Referring again to FIG. 2 , the ejection direction (central axis L) of the
此外,噴嘴31係安裝於水平地延伸的臂34的前端部。臂34的基端部係連結於升降軸35的上端,升降軸35係以使軸線沿著鉛直方向的姿勢配置。升降軸35係配設於噴嘴基台36。Moreover, the
於噴嘴基台36配設有噴嘴驅動部37,噴嘴驅動部37係用以使噴嘴31移動。例如,噴嘴驅動部37係構成為包含:旋轉驅動部(例如伺服馬達(servo motor)),係使升降軸35繞著升降軸35的軸線旋轉;升降驅動部(例如步進馬達(stepping motor)),係使升降軸35沿著升降軸35的軸線升降。當噴嘴驅動部37使升降軸35轉動時,噴嘴31係沿著水平面內的圓弧軌道移動;當噴嘴驅動部37使升降軸35升降時,噴嘴31係於接近基板W的上表面以及遠離基板W的上表面之方向移動。The
噴嘴驅動部37係藉由旋轉驅動部以及升降驅動部的驅動使噴嘴31在處理位置與待機退避位置之間移動。處理位置為噴嘴31朝向基板W的上表面噴出處理液之位置。待機退避位置為噴嘴31不朝向基板W的上表面噴出處理液之位置,且為不與基板W的搬運路徑干涉之位置。更具體而言,待機退避位置係例如為在俯視觀看時比基板W還外側的位置。在圖2的例子中,以二點鏈線顯示在待機退避位置處停止的噴嘴31。The
噴嘴驅動部37係與控制部90電性地連接,並在控制部90的控制下動作。亦即,噴嘴31的位置係被控制部90控制。The
[待機艙(standby pod)]
如圖2所示,處理單元10係包含待機艙39。待機艙39係設置於噴嘴31的待機退避位置的鉛直下方。待機艙39係具有例如於鉛直上方呈開口之箱狀的形狀,用以接住從噴嘴31噴出的處理液。
[standby pod]
As shown in FIG. 2 , the
[藥液供給部]
在圖2的例子中,處理單元10係包含藥液供給部70。藥液供給部70係包含噴嘴71。噴嘴71係例如為單流體噴嘴,用以朝向被自轉夾具20所保持的基板W噴出藥液。圖5係概略性地顯示藥液供給部70的構成的一例之圖。於噴嘴71連接有屬於配管系統的藥液配管系統72,藥液配管系統72係用以對噴嘴71供給藥液。藥液配管系統72係包含藥液供給管721。藥液供給管721的上游端係連接於藥液供給源725,藥液供給管721的下游端係連接於噴嘴71。藥液供給源725為藥液的供給源。藥液亦可為例如稀釋氫氟酸(dilute hydrofluoric acid)或者有機物的去除用的藥液等。
[Medical Solution Supply Department]
In the example of FIG. 2 , the
於藥液供給管721設置有供給閥722。供給閥722係切換藥液供給管721的流路的開閉。如圖5所例示般,亦可於藥液供給管721設置有流量調整閥723以及流量計724。流量調整閥723係調整於藥液供給管721流動的藥液的流量。流量計724係檢測於藥液供給管721流動的藥液的流量。A
當供給閥722打開時,藥液(在此為稀釋氫氟酸)從藥液供給源725於藥液供給管721流動並被供給至噴嘴71從而從噴嘴71噴出。When the
供給閥722係與控制部90電性地連接,並在控制部90的控制下被開閉。流量計724係與控制部90電性地連接,流量計724的檢測結果係被輸出至控制部90。流量調整閥723係與控制部90電性地連接,控制部90係基於流量計724的檢測結果來控制流量調整閥723的開放度。藉此,調整藥液的流量。如上所述,來自噴嘴71的藥液的噴出態樣(具體而言為噴出開始時序、噴出結束時序、噴出流量等)係被控制部90控制。The
再次參照圖2,噴嘴71係安裝於水平地延伸的臂74的前端部。臂74的基端部係連結於升降軸75的上端,升降軸75係以使軸線沿著鉛直方向的姿勢配置。升降軸75係配設於噴嘴基台76。Referring again to FIG. 2 , the
於噴嘴基台76配設有噴嘴驅動部77,噴嘴驅動部77係用以使噴嘴71移動。例如,噴嘴驅動部77係構成為包含:旋轉驅動部(例如伺服馬達),係使升降軸75繞著升降軸75的軸線旋轉;升降驅動部(例如步進馬達),係使升降軸75沿著升降軸75的軸線升降。當噴嘴驅動部77使升降軸75轉動時,噴嘴71係沿著水平面內的圓弧軌道移動;當噴嘴驅動部77使升降軸75升降時,噴嘴71係於接近基板W的上表面以及遠離基板W的上表面之方向移動。The
噴嘴驅動部77係藉由旋轉驅動部以及升降驅動部的驅動使噴嘴71在處理位置與待機退避位置之間移動。處理位置為噴嘴71朝向基板W的上表面噴出藥液之位置;待機退避位置為噴嘴71不朝向基板W的上表面噴出藥液之位置,且為不與基板W的搬運路徑干涉之位置。The
噴嘴驅動部77係與控制部90電性地連接,並在控制部90的控制下動作。亦即,噴嘴71的位置係被控制部90控制。The
此外,在圖2的例子中,雖然噴嘴71安裝於臂74,然而噴嘴71亦可安裝於臂34的前端。亦即,噴嘴71亦可與噴嘴31一體地移動。在此情形中,無須臂74、升降軸75、噴嘴基台76以及噴嘴驅動部77。In addition, in the example of FIG. 2, although the
[清洗液供給部]
在圖2的例子中,處理單元10係包含清洗液供給部80。清洗液供給部80係包含噴嘴81。噴嘴81係例如為單流體噴嘴,用以對基板W的上表面噴出清洗液。噴嘴81係在比被自轉夾具20保持的基板W還上方的空間中設置於在鉛直方向與基板W彼此對向之位置。噴嘴81係具有面積較大的下表面,且該下表面係與基板W的上表面彼此對向地配置。噴嘴81係具有例如俯視觀看時為圓形狀,噴嘴81的直徑係例如為基板W的直徑的一半以上。
[Cleaning fluid supply part]
In the example of FIG. 2 , the
於噴嘴81連接有屬於配管系統的清洗液配管系統82,清洗液配管系統82係對噴嘴81供給清洗液。清洗液配管系統82係包含清洗液供給管821。清洗液供給管821的上游端係連接於清洗液供給源825,清洗液供給管821的下游端係連接於噴嘴81。清洗液供給源825為清洗液的供給源。清洗液係例如為揮發性比第一處理液(在此為純水)還高的處理液,且例如為異丙醇。以下,採用異丙醇作為清洗液來說明。A cleaning
於清洗液供給管821設置有供給閥822。供給閥822係切換清洗液供給管821的流路的開閉。如圖2所例示,亦可於清洗液供給管821設置有流量調整閥823以及流量計824。流量調整閥823係調整於清洗液供給管821流動的異丙醇的流量。流量計824係檢測於清洗液供給管821流動的異丙醇的流量。A
當供給閥822打開時,異丙醇係從清洗液供給源825於清洗液供給管821流動並被供給至噴嘴81,從而從噴嘴81噴出。When the
供給閥822係與控制部90電性地連接,並在控制部90的控制下被開閉。流量計824亦與控制部90電性地連接,流量計824的檢測結果係被輸出至控制部90。流量調整閥823係與控制部90電性地連接,控制部90係基於流量計824的檢測結果來控制流量調整閥823的開放度。藉此,調整異丙醇的流量。如上所述,來自噴嘴81的清洗液的噴出態樣(具體而言為噴出開始時序、噴出結束時序、噴出流量等)係被控制部90控制。The
噴嘴81係藉由噴嘴驅動部83移動。噴嘴驅動部83係包含用以使噴嘴81移動之升降驅動部(例如步進馬達)。噴嘴驅動部83係與控制部90電性地連接,用以使噴嘴81於接近基板W的上表面以及遠離基板W的上表面之方向移動。亦即,噴嘴81的位置係被控制部90控制。噴嘴驅動部83係使噴嘴81在處理位置與待機退避位置之間移動,處理位置為接近基板W的上表面之位置,待機退避位置為已從基板W的上表面離開之位置。處理位置為噴嘴81對基板W的上表面噴出異丙醇之位置。待機退避位置為噴嘴81不對基板W的上表面噴出異丙醇之位置,且為不與基板W的搬運路徑干涉之位置。噴嘴81亦可藉由噴嘴驅動部83水平地移動。The
[處理罩]
處理罩40係接住從被自轉夾具20保持並被旋轉的基板W飛散的處理液。
[processing cover]
The
處理罩40係包含彼此獨立且可升降的內罩41、中罩42以及外罩43。內罩41係圍繞自轉夾具20的周圍,並具有相對於旋轉軸線CX大致旋轉對稱的形狀,該旋轉軸線CX係通過被自轉夾具20保持的基板W的中心。內罩41係一體性地包含:俯視觀看為圓環狀的底部44;圓筒狀的內壁部45,係從底部44的內周緣朝上方立起;圓筒狀的外壁部46,係從底部44的外周緣朝上方立起;第一導引部47,係從內壁部45與外壁部46之間立起,且上端部一邊描繪順暢的圓弧一邊朝中心側(接近被自轉夾具20保持的基板W的旋轉軸線CX之方向)斜上方延伸;以及圓筒狀的中壁部48,係從第一導引部47與外壁部46之間朝上方立起。The
內壁部45係形成為下述長度:在內罩41上升到最上方的狀態下保持適當的間隙被收容於蓋構件23與鍔狀構件25之間。中壁部48係形成為下述長度:在內罩41與中罩42最接近的狀態下保持適當的間隙被收容於中罩42中的後述的第二導引部52與處理液分離壁53之間。The
第一導引部47係具有上端部47b,上端部47b係一邊描繪順暢的圓弧一邊朝中心側(接近基板W的旋轉軸線CX之方向)斜上方延伸。此外,內壁部45與第一導引部47之間係被作為廢棄溝槽49,廢棄溝槽49係用以收集使用完畢的處理液並予以廢棄。第一導引部47與中壁部48之間係作為圓環狀的內側回收溝槽50,內側回收溝槽50係用以收集使用完畢的處理液並予以回收。再者,中壁部48與外壁部46之間係作為圓環狀的外側回收溝槽51,外側回收溝槽51係用以收集與內側回收溝槽50不同種類的處理液並予以回收。The
於廢棄溝槽49連接有未圖示的排氣排液機構,排氣排液機構係用以排出被收集至廢棄溝槽49的處理液並將廢棄溝槽49內強制性地排氣。排氣排液機構係例如等間隔地沿著廢棄溝槽49的周方向設置有四個。此外,於內側回收溝槽50以及外側回收溝槽51連接有回收機構(皆未圖示),回收機構係將分別被收集至內側回收溝槽50以及外側回收溝槽51的處理液回收至設置於處理單元10的外部的回收儲槽(recovery tank)。此外,內側回收溝槽50以及外側回收溝槽51的底部係相對於水平方向傾斜達至微小角度,並在最低的位置連接有回收機構。藉此,圓滑地回收流入至內側回收溝槽50以及外側回收溝槽51的處理液。An exhausting and draining mechanism (not shown) is connected to the
中罩42係圍繞自轉夾具20的周圍,並具有相對於旋轉軸線CX大致旋轉對稱的形狀,旋轉軸線CX係通過被自轉夾具20保持的基板W的中心。中罩42係一體性地包含第二導引部52以及圓筒狀的處理液分離壁53,處理液分離壁53係連結於第二導引部52。The
第二導引部52係在內罩41的第一導引部47的外側中具有:下端部52a,係作成與第一導引部47的下端部同軸的圓筒狀;上端部52b,係一邊從下端部52a的上端描繪順暢的圓弧一邊朝中心側(接近基板W的旋轉軸線CX之方向)斜上方延伸;以及折返部52c,係將上端部52b的前端部朝下方折返而形成。下端部52a係在內罩41與中罩42最接近的狀態下在第一導引部47與中壁部48之間保持適當的間隙並被收容於內側回收溝槽50內。此外,上端部52b係以於上下方向與內罩41的第一導引部47的上端部47b重疊之方式設置,且在內罩41與中罩42最接近的狀態下保持極為微小的間隔接近第一導引部47的上端部47b。再者,將上端部52b的前端朝下方折返而形成的折返部52c係形成為下述長度:在內罩41與中罩42最接近的狀態下折返部52c於水平方向與第一導引部47的上端部47b的前端重疊。The
此外,第二導引部52的上端部52b係以越朝向下方則厚度越變厚之方式形成,處理液分離壁53係具有以從上端部52b的下端外周緣部朝下方延伸之方式設置的圓筒形狀。處理液分離壁53係在內罩41與中罩42最接近的狀態下於中壁部48與外罩43之間保持適當的間隙被收容於外側回收溝槽51內。In addition, the
外罩43係在中罩42的第二導引部52的外側中圍繞自轉夾具20的周圍,並具有相對於旋轉軸線CX大致旋轉對稱的形狀,旋轉軸線CX係通過被自轉夾具20保持的基板W的中心。外罩43係具有作為第三導引部的功能。外罩43係具有:下端部43a,係作成與第二導引部52的下端部52a同軸的圓筒狀;上端部43b,係從下端部43a的上端一邊描繪順暢的圓弧一邊朝中心側(接近基板W的旋轉軸線CX之方向)斜上方延伸;以及折返部43c,係將上端部43b的前端部朝下方折返而形成。The
下端部43a係在內罩41與外罩43最接近的狀態下於中罩42的處理液分離壁53與內罩41的外壁部46之間保持適當的間隙被收容於外側回收溝槽51內。此外,上端部43b係以於上下方向與中罩42的第二導引部52重疊之方式設置,在中罩42與外罩43最接近的狀態下保持極為微小的間隔接近第二導引部52的上端部52b。再者,將上端部43b的前端部朝下方折返而形成的折返部43c係以在中罩42與外罩43最接近的狀態下折返部43c於水平方向與第二導引部52的折返部52c重疊之方式形成。The
此外,內罩41、中罩42以及外罩43係作成彼此獨立且能夠升降。亦即,於內罩41、中罩42以及外罩43各者個別地設置有罩升降機構(未圖示),並藉由罩升降機構個別獨立地被升降。作為此種罩升降機構,能採用例如滾珠螺桿(ball screw)機構或者汽缸(air cylinder)等公知的各種機構。In addition, the
此外,亦可於處理罩40設置有用以將處理罩40內的氣體排氣至外部之排氣構造。In addition, the
[控制部90]
控制部90係控制基板處理裝置100內的各部的動作。圖6係概略性地顯示控制部90的構成的一例之功能方塊圖。作為控制部90的硬體之構成係與一般的電腦相同。亦即,控制部90係構成為具備:CPU(Central Processing Unit;中央處理單元)等之處理部91,係進行各種運算處理;暫時性的記憶媒體92,為屬於讀寫自如的記憶體的RAM(Random Access Memory;隨機存取記憶體)等,用以記憶各種資訊;以及非暫時性的記憶媒體93,為屬於用以記憶基本程式之讀出專用的記憶體之ROM(Read Only Memory;唯讀記憶體)以及用以預先記憶控制用軟體或者資料等之磁碟等。藉由控制部90的處理部91執行預定的處理程式,基板處理裝置100的各個動作機構係被控制部90控制,從而進行基板處理裝置100中的處理。此外,在控制部90中所實現的一部分或者全部的功能部亦可藉由專用的邏輯電路等硬體性地實現。此外,於控制部90的記憶媒體92記憶有制定了基板處理裝置100的處理內容之處理處方(processing recipe)。
[control unit 90]
The
在圖6的例子中顯示控制部90與處理單元10內的各部之間的連接。控制部90係控制自轉夾具20、混合液供給部30、藥液供給部70、清洗液供給部80以及處理罩40。控制部90係基於規定了對於基板W的處理的程序之程序資訊(包含處理處方)使各部動作,藉此進行對於基板W的一連串的處理。規定了對於基板W的處理的程序之程序資訊亦可例如為藉由比基板處理裝置100還上游側的裝置通知至控制部90,或者亦可為作業員經由未圖示的使用者介面(user interface)輸入至控制部90。In the example of FIG. 6, the connection between the
[基板處理的流程]
圖7係顯示基板處理的流程的一例之流程圖。初始時,處理單元10內的噴嘴31、噴嘴71、噴嘴81以及處理罩40係在各自的待機退避位置處停止。
[Flow of substrate processing]
FIG. 7 is a flowchart showing an example of the flow of substrate processing. Initially, the
中心機器人CR係將未處理的基板W搬入至處理單元10並載置於自轉夾具20上,自轉夾具20係保持基板W(步驟S1,相當於保持工序)。具體而言,自轉夾具20係藉由一群夾具銷26保持基板W。藉此,基板W係成為以水平姿勢被保持的狀態。The center robot CR carries the unprocessed substrate W into the
當基板W被保持於自轉夾具20時,自轉夾具20開始旋轉,藉此被自轉夾具20保持的基板W以水平姿勢開始旋轉(步驟S2)。基板W的旋轉係持續至後述的步驟S6結束為止。When the substrate W is held by the
此外,為了在基板處理中接住從基板W的周緣飛散的處理液,處理罩40係因應需要而上升。在基板處理中,雖然因應被供給至基板W的處理液的種類來切換適當地上升的罩,然而此部分與本實施形態的本質不同,因此在以下中省略此部分的說明。In addition, in order to catch the processing liquid scattered from the peripheral edge of the substrate W during the substrate processing, the
接著,進行藥液處理(步驟S3)。例如,藉由噴嘴驅動部77,噴嘴71係移動至比基板W還上方的處理位置。接著,供給閥722打開,從噴嘴71朝旋轉中的基板W的上表面噴出藥液(例如稀釋氫氟酸)。著液至基板W的上表面的藥液係接受離心力朝基板W的周緣側移動並從該基板W的周緣側朝外側飛散。藥液作用於基板W的上表面,藉此對基板W進行藥液處理。Next, chemical solution processing is performed (step S3). For example, the
例如,當從開始供給藥液起經過第一預定時間時,供給閥722係關閉。藉此,停止從噴嘴71噴出藥液。接著,藉由噴嘴驅動部77,噴嘴71係朝待機退避位置移動。For example, the
接著,進行清洗處理(步驟S4)。作為具體性的一例,首先,藉由噴嘴驅動部37,噴嘴31係下降至處理位置。接著,供給閥3211以及供給閥3231係打開。藉此,從噴嘴31對旋轉中的基板W的上表面噴出包含水的第一處理液(在此為純水)。藉此,基板W的上表面的藥液係被置換成純水。此外,清洗處理(步驟S4)亦可省略。Next, a cleaning process is performed (step S4). As a specific example, first, the
例如,當從開始供給純水經過第二預定時間時,進行液滴處理(步驟S5,相當於混合液供給工序)。在液滴處理中,供給閥3211、供給閥3221、供給閥3231以及供給閥332係打開。藉此,純水以及異丙醇係分別通過第一供給管321以及第二供給管322被供給至混合部324,來自混合部324的混合液係通過混合管323被供給至噴嘴31。此外,氮氣氣體係被供給至噴嘴31。藉此,在噴嘴31中,混合液與氮氣氣體係被混合並生成混合液的液滴,從噴嘴31對旋轉中的基板W的上表面噴出該混合液的液滴。For example, when the second predetermined time elapses from the start of supply of pure water, droplet processing is performed (step S5, which corresponds to the mixed solution supply step). During droplet processing,
該混合液的流量係被設定成例如數百mL/分鐘(例如100mL/分鐘)左右。此外,該混合液中的異丙醇的濃度係例如被設定成10vol%以上至40vol%以下。藉此,能藉由液滴處理適當地去除基板W的上表面的微粒。The flow rate of the mixed solution is set to, for example, about several hundred mL/min (for example, 100 mL/min). In addition, the concentration of isopropyl alcohol in the mixed solution is set to, for example, 10 vol % or more and 40 vol % or less. Thereby, the particles on the upper surface of the substrate W can be appropriately removed by the droplet treatment.
在液滴處理中,與混合液的液滴的噴出並行地,噴嘴驅動部37係使噴嘴31在以非接觸狀態下與自轉基座21上的基板W的上表面接近之水平面內沿著與基板W的旋轉方向交叉之方向移動。具體而言,噴嘴驅動部37係使噴嘴31沿著連結第一位置與第二位置之圓弧軌道往復移動,第一位置為從噴嘴31噴出的液滴的噴流碰撞至基板W的上表面中央部之位置,第二位置為從噴嘴31噴出的液滴的噴流碰撞至基板W的上表面周緣部之位置。當在基板W正在旋轉中的狀態下噴嘴31係於第一位置與第二位置之間往復移動時,從噴嘴31噴出的混合液的液滴的著液位置係在基板W的上表面的全域移動(掃描(掃過)),混合液的液滴係碰撞至基板W的上表面內的全部的位置。亦即,混合液的液滴係被供給至基板W的上表面的全域。In the droplet processing, in parallel with the discharge of the droplets of the mixed solution, the
例如,當從開始供給混合液的液滴起經過第三預定時間時,關閉供給閥3211、供給閥3221、供給閥3231以及供給閥332。藉此,停止噴出混合液的液滴。接著,藉由噴嘴驅動部37,噴嘴31係移動至待機退避位置。For example, when the third predetermined time elapses from the start of supplying the droplets of the mixed solution, the
接著,進行乾燥處理(步驟S6,相當於乾燥工序)。所謂乾燥處理為用以使基板W乾燥之處理。例如,首先,藉由噴嘴驅動部83,噴嘴81係移動至處理位置。接著,供給閥822係打開。藉此,從噴嘴81對旋轉中的基板W的上表面噴出具有高揮發性的清洗液(在此為異丙醇)。著液至基板W的上表面的異丙醇係接受離心力從而朝基板W的周緣移動,並從該基板W的周緣朝外側飛散。藉此,基板W的上表面的混合液係被置換成異丙醇。Next, a drying process is performed (step S6, which corresponds to a drying process). The so-called drying process is a process for drying the substrate W. For example, first, the
例如,當從開始供給異丙醇起經過第四預定時間時,供給閥822係關閉。藉此,停止噴出異丙醇。接著,藉由噴嘴驅動部83,噴嘴81係上升至待機退避位置。For example, when the fourth predetermined time elapses from the start of supplying isopropyl alcohol, the
接著,自轉夾具20的旋轉速度係上升至高速的旋轉速度(例如為比液滴處理時的旋轉速度還高速的旋轉速度)。藉此,殘存於基板W的異丙醇係被甩離而從基板W被去除,藉此基板W被乾燥(所謂的旋乾(spin drying))。如上所述,於基板W的上表面存在有揮發性高的異丙醇,且藉由旋乾使異丙醇容易地蒸發。藉此,能抑制水漬(watermark)的產生。此外,在乾燥處理中不一定需要供給異丙醇。亦即,亦可省略供給異丙醇並藉由基板W的高速旋轉使基板W乾燥。Next, the rotational speed of the
當自轉夾具20以高速的旋轉速度開始旋轉後經過第五預定時間時,停止旋轉自轉夾具20。此外,處理罩40係下降。When the fifth predetermined time elapses after the rotation of the
接著,中心機器人CR係從處理單元10搬出該基板W(步驟S7)。以上,結束對於該基板W的一連串的處理。Next, the center robot CR carries out the substrate W from the processing unit 10 (step S7). As described above, the series of processing on the substrate W is completed.
依序對基板W進行上述步驟S1至步驟S7的一連串的處理,藉此在處理單元10中逐片地處理複數片基板W。A series of processes from steps S1 to S7 described above are sequentially performed on the substrates W, whereby a plurality of substrates W are processed one by one in the
[氣泡的產生] 此外,會於混合液產生氣泡。認為這是因為氣體(例如空氣)對於不同的兩種液體之溶解度的差所導致。以下具體地說明。 [Generation of bubbles] In addition, bubbles are generated in the mixed liquid. It is believed that this is due to the difference in solubility of the gas (eg air) for the different two liquids. The following is a concrete description.
在此,說明氣體對於包含第一液體以及第二液體的混合液之溶解度,第一液體係具有第一溶解度,第二液體係具有比第一溶解度還小的第二溶解度。氣體對於混合液之溶解度係因應第一溶解度、第二溶解度以及混合液中的第一液體與第二液體的濃度而決定。在此,導入假想溶解度來說明氣體對於混合液之溶解度。所謂假想溶解度為使用第一溶解度、第二溶解度以及濃度以線性比例算出的溶解度。例如,當將混合液中的第一液體的濃度稱為第一濃度並將混合液中的第二液體的濃度稱為第二濃度時,假想溶解度係以(第一溶解度) ×(第一濃度)+(第二溶解度)×(第二濃度)來表示。可知氣體對於混合液之溶解度係變得比假想溶解度還小。Here, the solubility of the gas in the mixed liquid containing the first liquid and the second liquid is described. The first liquid system has a first solubility, and the second liquid system has a second solubility smaller than the first solubility. The solubility of the gas in the mixed liquid is determined according to the first solubility, the second solubility and the concentrations of the first liquid and the second liquid in the mixed liquid. Here, the fictitious solubility is introduced to describe the solubility of the gas in the mixed liquid. The fictitious solubility refers to the solubility calculated in a linear ratio using the first solubility, the second solubility, and the concentration. For example, when the concentration of the first liquid in the mixed solution is referred to as the first concentration and the concentration of the second liquid in the mixed solution is referred to as the second concentration, the virtual solubility is represented by (first solubility) × (first concentration ) + (second solubility) × (second concentration). It can be seen that the solubility of the gas in the liquid mixture becomes smaller than the assumed solubility.
因此,例如在氣體分別以飽和狀態溶入至第一液體以及第二液體之情形中,當混合第一液體與第二液體時,已溶入的一部分的氣體係作為氣泡而出現。具體而言,氣體係出現達至相當於對於混合液的溶解度與假想溶解度的差值之量。Therefore, for example, when gas is dissolved in the first liquid and the second liquid in a saturated state, when the first liquid and the second liquid are mixed, a part of the dissolved gas system appears as bubbles. Specifically, the gas system appears in an amount corresponding to the difference between the solubility in the mixed liquid and the fictive solubility.
亦即,當混合純水與異丙醇混合時,會因為溶解度的差異而於混合液產生氣泡。此外,會有於第二處理液供給源3224設置有用以儲留異丙醇之儲槽(tank)且對該儲槽內的上部空間供給惰性氣體(例如氮氣氣體)之情形。在此情形中,被儲留於儲槽內的異丙醇係被氮氣氣體按壓,異丙醇係接受該按壓力而從儲槽被供給至第二供給管322。在此情形中,由於氮氣氣體溶解至異丙醇,因此因為純水與異丙醇的混合,氮氣氣體會作為氣泡出現於混合液。That is, when mixed pure water and isopropyl alcohol are mixed, bubbles are generated in the mixed liquid due to the difference in solubility. In addition, there may be a case where a tank for storing isopropanol is provided in the second treatment
當申請人確認液滴處理(步驟S5)後的混合管323的內部時,確認到混合液中的異丙醇的濃度越高則所產生的氣泡的量就越增加。亦即,認為:由於氣體對於異丙醇之溶存度高,因此溶存於該異丙醇的氣體係在混合液中出現。此外,確認到異丙醇的濃度越高則混合液中的氣泡的量越隨著時間的經過而增加。亦即,在噴嘴31於待機退避位置處停止的期間中,氣泡的量係隨著時間的經過而增加。When the applicant checked the inside of the mixing
因此,在從處理單元10結束液滴處理後直至下一次開始液滴處理為止的時間長之情形中,會有混合部324以及混合管323的內部中的氣泡的量變大之情形。Therefore, when the time from when the
當氣泡的量變大時,在下一次的液滴處理中會有因為該氣泡而產生問題的可能性。例如,會有因為微粒聚集於氣泡的周圍等之各種因素而使微粒附著於基板W的上表面之虞。亦會有混合液的流量因為氣泡而降低之情形。當混合液的流量降低時,氮氣氣體的流量對於混合液的流量相對性地變大,結果混合液的液滴的流速變高,從而對基板W造成損傷。When the amount of air bubbles increases, there is a possibility that a problem may occur due to the air bubbles in the next droplet processing. For example, the particles may adhere to the upper surface of the substrate W due to various factors such as aggregation of the particles around the bubbles. There may also be cases where the flow rate of the mixture is reduced due to air bubbles. When the flow rate of the mixed liquid decreases, the flow rate of the nitrogen gas becomes relatively large relative to the flow rate of the mixed liquid, and as a result, the flow velocity of the liquid droplets of the mixed liquid increases, and the substrate W is damaged.
因此,為了抑制此種氣泡的產生,考量將混合液中的異丙醇的濃度設小。然而,因為異丙醇的濃度降低,液滴處理所致使的微粒去除性能係降低。因此,異丙醇的濃度需要某種程度。例如,當混合液中的異丙醇的濃度被設定成10vol%以上至40vol%以下時,能提高微粒去除性能。另一方面,如上所述,當異丙醇的濃度變高時,在噴嘴31於待機退避位置處停止的期間中,隨著時間的經過,於混合液中產生許多氣泡,因為該氣泡而在下一次的液滴處理中產生問題。Therefore, in order to suppress the generation of such bubbles, it is considered that the concentration of isopropyl alcohol in the mixed solution should be small. However, as the concentration of isopropanol was lowered, the particle removal performance by droplet treatment was lowered. Therefore, the concentration of isopropanol is required to some extent. For example, when the concentration of isopropyl alcohol in the mixed solution is set to 10 vol % or more and 40 vol % or less, the particulate removal performance can be improved. On the other hand, as described above, when the concentration of isopropyl alcohol becomes high, while the
[推出處理(置換工序)]
因此,在本實施形態中,為了抑制混合液中的氣泡的產生,在從結束液滴處理後直至下一次開始液滴處理為止,進行推出處理。所謂推出處理為下述處理:供給純水以及異丙醇中的任一者的處理液(以下稱為置換液),以該置換液推出混合部324以及混合管323的內部的混合液並從噴嘴31噴出。在此推出處理中,例如在噴嘴31於待機退避位置處停止的狀態下進行。藉此,從噴嘴31噴出的混合液係被待機艙39接住而被回收或者廢棄。
[Extrusion process (replacement process)]
Therefore, in the present embodiment, in order to suppress the generation of air bubbles in the liquid mixture, the ejection process is performed from the end of the droplet process until the next start of the droplet process. The push-out treatment is a treatment of supplying a treatment liquid (hereinafter referred to as a replacement liquid) of pure water and isopropyl alcohol, pushing out the mixed liquid inside the
藉由此推出處理,將混合部324以及混合管323的內部的混合液置換成置換液。由於置換液為單一液體,因此能抑制在混合部324以及混合管323的內部產生氣泡。By this extrusion process, the mixed liquid inside the
圖9係顯示基板處理的流程的一例之流程圖。在圖9的例子中,控制部90係在液滴處理(步驟S5)之後即刻執行推出處理(步驟S8,相當於置換工序)。在圖9的例子中,與乾燥處理(步驟S6)並行地進行推出處理(步驟S8)。FIG. 9 is a flowchart showing an example of the flow of substrate processing. In the example of FIG. 9 , the
在此推出處理中,混合液供給部30係例如將純水作為置換液供給。具體而言,在關閉供給閥3221以及供給閥332的狀態下,供給閥3211以及供給閥3231係打開。藉此,從第一供給管321對混合部324供給純水。藉由純水的供給,混合部234以及混合管323的內部的混合液係被純水推出,並從噴嘴31噴出至待機艙39。因此,混合部324以及混合管323的內部的混合液係從上游側依序被置換成純水。當混合液全部被噴出時,從噴嘴31接著噴出純水。In this push-out process, the mixed
例如,當從開始供給純水經過第五預定時間時,供給閥3211以及供給閥3231係關閉。藉此,停止供給純水。第五預定時間係被設定成混合部324以及混合管323的內部的混合液被置換成純水之充分的時間。For example, when the fifth predetermined time elapses from the start of supply of pure water, the
藉此,由於混合液被置換成純水,因此能抑制之後的氣泡的產生。因此,在下一次進行液滴處理之情形中,能抑制因為氣泡導致產生問題。Thereby, since the liquid mixture is replaced with pure water, the generation of subsequent bubbles can be suppressed. Therefore, in the case where the droplet processing is performed next time, the occurrence of problems due to air bubbles can be suppressed.
此外,在上述的例子中,作為開始推出處理之觸發,不採用液滴處理的結束以外的條件。亦即,在每次結束液滴處理時,常態地進行推出處理。藉此,能確實地抑制因為下一次的液滴處理的氣泡導致產生問題。然而,推出處理並不一定常態地需要。原因在於:在從結束液滴處理直至下一次開始液滴處理為止之時間短之情形中,氣泡的量不太會增加。In addition, in the above-mentioned example, conditions other than the completion of the droplet processing are not adopted as a trigger for starting the ejection processing. That is, every time the droplet processing is terminated, the ejection processing is normally performed. Thereby, the occurrence of a problem due to air bubbles in the next droplet processing can be reliably suppressed. However, push-out processing is not necessarily routinely required. The reason is that in the case where the time from the end of the droplet processing until the next start of the droplet processing is short, the amount of air bubbles is less likely to increase.
因此,控制部90係在液滴處理的結束後,在基準時間Tref內不將混合液供給至基板W時,亦即不進行下一次的液滴處理時,進行推出處理。另一方面,在基準時間Tref內進行下一次的液滴處理時,不進行推出處理。Therefore, the
圖8係概略性地顯示是否需要推出處理的判斷的一例之流程圖。首先,控制部90係取得從結束液滴處理直至下一次開始液滴處理為止之時間(以下稱為液滴待機時間T1)(步驟S11)。液滴待機時間T1係例如包含於規定了對於基板W的處理的程序之程序資訊。該程序資訊係例如藉由比基板處理裝置100還上游側的裝置通知至控制部90,或者亦可為藉由作業員的輸入而通知至控制部90。FIG. 8 is a flowchart schematically showing an example of the judgment as to whether or not the push-out process is necessary. First, the
接著,控制部90係判斷液滴待機時間T1是否為基準時間Tref以上(步驟S12)。基準時間Tref係例如被預先設定,具體而言係設定成數分鐘(例如5分鐘左右)。Next, the
在液滴待機時間T1為基準時間Tref以上時,控制部90係判斷成需要推出處理(步驟S13)。另一方面,在液滴待機時間T1為未滿基準時間Tref時,控制部90係判斷成不需要推出處理(步驟S14)。When the droplet standby time T1 is equal to or longer than the reference time Tref, the
圖10係時間系列地顯示基板處理的各個步驟之圖。在圖10的例子中顯示執行各個步驟S1至S8之時序。在圖10的例子中顯示對於三片基板W之基板W1、基板W2、基板W3的基板處理。FIG. 10 is a diagram showing various steps of substrate processing in time series. In the example of FIG. 10, the sequence of executing the respective steps S1 to S8 is shown. In the example of FIG. 10, the substrate processing of the substrate W1, the substrate W2, and the substrate W3 of the three substrates W is shown.
在圖10的例子中,對基板W1執行步驟S1至步驟S7的基板處理,接著對下一片基板W2進行同樣的基板處理。亦即,在圖10的例子中與對於基板W1的基板處理連續地進行對於基板W2的基板處理。因此,從結束對於基板W1的基板處理直至開始對於下一片基板W2的基板處理為止之時間係非常地短。In the example of FIG. 10 , the substrate processing of steps S1 to S7 is performed on the substrate W1, and then the same substrate processing is performed on the next substrate W2. That is, in the example of FIG. 10 , the substrate processing on the substrate W2 is performed continuously with the substrate processing on the substrate W1 . Therefore, the time from the end of the substrate processing on the substrate W1 to the start of the substrate processing on the next substrate W2 is very short.
在此情形中,從結束對於基板W1的液滴處理(步驟S5)直至開始對於下一片基板W2的液滴處理(步驟S5)為止之液滴待機時間T1係變得比基準時間Tref還短。因此,在液滴待機時間T1中不進行推出處理(步驟S8)。亦即,由於液滴待機時間T1比基準時間Tref還短,因此即使不進行推出處理,對於下一片基板W2的液滴處理(步驟S5)的開始時間點中的氣泡的量係較小。因此,即使不進行推出處理,亦能適當地進行液滴處理。此外,藉由不進行推出處理,能使置換液(在此為純水)的消耗量減少。In this case, the droplet standby time T1 from the end of the droplet processing on the substrate W1 (step S5 ) until the start of the droplet processing on the next substrate W2 (step S5 ) becomes shorter than the reference time Tref. Therefore, the ejection process is not performed during the droplet standby time T1 (step S8). That is, since the droplet standby time T1 is shorter than the reference time Tref, the amount of air bubbles at the start time of the droplet process (step S5 ) on the next substrate W2 is small even if the ejection process is not performed. Therefore, the droplet processing can be appropriately performed even if the ejection processing is not performed. In addition, the consumption of the replacement liquid (pure water in this case) can be reduced by not performing the push-out treatment.
另一方面,在圖10的例子中,在基板W2的基板處理之後經過預定的時間間隔,對基板W3執行基板處理。亦即,在圖10的例子中,從結束對於基板W2的基板處理直至開始對於下一片基板W3的基板處理為止之時間係較長。On the other hand, in the example of FIG. 10 , after a predetermined time interval elapses after the substrate processing of the substrate W2 , the substrate processing is performed on the substrate W3 . That is, in the example of FIG. 10 , the time from the end of the substrate processing on the substrate W2 to the start of the substrate processing on the next substrate W3 is long.
例如,會有基板處理裝置100將規定片數的基板W作為一單位來執行基板處理之情形。此規定片數係例如能設定成包含於被搬入至裝載埠LP之承載器C內的基板W的片數。會有下述情形:連續地進行對於一單位內的基板W的基板處理,當結束對於該一單位內的最後的基板W(例如基板W2)的基板處理時,經過預定的時間間隔開始對下一個單位的最初的基板W(例如基板W3)的基板處理。For example, there may be cases where the
在此種情形中會有下述情形:從結束對於基板W2的液滴處理(步驟S5)直至開始對於下一片基板W3的液滴處理(步驟S5)為止之液滴待機時間T1係變得比基準時間Tref還長。在此情形中,在液滴待機時間T1中執行推出處理(步驟S8)。在圖10的例子中,與對於基板W2的乾燥處理(步驟S6)並行地執行推出處理(步驟S8)。藉此,能以純水置換混合部324以及混合管323的內部的混合液。因此,能抑制因為混合液導致氣泡的產生。In this case, the droplet standby time T1 from the end of the droplet processing on the substrate W2 (step S5 ) to the start of the droplet processing on the next substrate W3 (step S5 ) becomes longer than The reference time Tref is still long. In this case, the ejection process is performed in the droplet standby time T1 (step S8). In the example of FIG. 10, the push-out process (step S8) is performed in parallel with the drying process (step S6) with respect to the board|substrate W2. Thereby, the mixed liquid inside the mixing
因此,能抑制在對於基板W3的液滴處理(步驟S5)中因為氣泡導致產生問題。更具體而言,與不進行推出處理之情形相比,能使殘留於基板W的上表面的微粒的個數減少約一半。此外,亦能減少因為混合液的流量降低導致基板W的損傷。Therefore, it is possible to suppress the occurrence of problems due to air bubbles in the droplet processing (step S5 ) on the substrate W3 . More specifically, the number of particles remaining on the upper surface of the substrate W can be reduced by about half compared to the case where the push-out process is not performed. In addition, damage to the substrate W due to a decrease in the flow rate of the mixed solution can also be reduced.
如上所述,在混合液供給部30結束混合液的供給後在基準時間Tref內未供給混合液之情形中,進行推出處理。藉此,能抑制混合部324以及混合管323的內部中的氣泡的產生。進而,能在接下來的液滴處理中抑制因為氣泡導致產生問題。As described above, when the mixed solution is not supplied within the reference time Tref after the mixed
此外,在上述的例子中,在推出處理(步驟S8)中,在噴嘴31於待機退避位置處停止的狀態下混合液供給部30係將置換液(在此為純水)供給至混合部324。藉此,混合液以及純水係被噴出至待機艙39而不會噴出至基板W。因此,能避免對基板W供給不必要的處理液(在此為純水)。此外,能在液滴處理之後迅速地開始對於基板W的下一個處理(在此為乾燥處理)。In addition, in the above-mentioned example, in the push-out process (step S8 ), the mixed
此外,在上述的例子中,在推出處理(步驟S8)中,混合液供給部30係不將氣體供給至噴嘴31。藉此,能使氣體的消耗量減少。In addition, in the above-mentioned example, in the extrusion process (step S8 ), the mixed
[置換液] 氧對於水之溶解度係比氧對於異丙醇之溶解度還高,且氮對於水之溶解度係比氮對於異丙醇之溶解度還高。因此,相比於溶解於水,空氣係能夠更多地溶解於異丙醇。 [replacement fluid] Oxygen is more soluble in water than oxygen is in isopropanol, and nitrogen is more soluble in water than nitrogen is in isopropanol. Therefore, the air system can dissolve more in isopropyl alcohol than in water.
在上述的例子中,在推出處理(步驟S8)中採用包含水的第一處理液(在此為純水)作為置換液。亦即,並非是採用溶解度大的異丙醇,而是採用溶解度小的純水。依據此推出處理,混合部324以及混合管323的內部係被溶解度小的純水填滿。In the above-described example, the first treatment liquid (here, pure water) containing water is used as the replacement liquid in the push-out treatment (step S8 ). That is, instead of using isopropyl alcohol having a high solubility, pure water having a low solubility was used. According to this push-out process, the interiors of the
在此狀態下,當混合液供給部30將純水以及異丙醇供給至混合部324時,混合液係推出混合部324以及混合管323的內部的純水並使純水從噴嘴31噴出。此時,雖然在混合液與純水之間的界面亦會產生氣泡,然而由於純水的溶解度小,因此氣泡較難產生。In this state, when the mixed
另一方面,在推出處理(步驟S8)中亦能夠採用異丙醇作為置換液。在此情形中,由於能將混合部324以及混合管323的內部的混合液置換成置換液(異丙醇),因此亦能抑制氣泡的產生。On the other hand, isopropyl alcohol can also be used as a replacement liquid in the push-out process (step S8). In this case, since the mixed liquid inside the
然而,在此狀態下,當混合液供給部30將純水以及異丙醇供給至混合部324時,混合液係推出混合部324以及混合管323的內部的異丙醇並使異丙醇從噴嘴31噴出。此時,由於混合液推出溶解度高的異丙醇,因此會有在混合液與異丙醇之間的界面產生氣泡的可能性。However, in this state, when the mixed
因此,在減少氣泡的產生之觀點中,期望在推出處理(步驟S8)中採用第一處理液(在此為純水)作為置換液。藉此,能抑制上述的氣泡的產生。Therefore, from the viewpoint of reducing the generation of air bubbles, it is desirable to use the first treatment liquid (here, pure water) as the replacement liquid in the push-out treatment (step S8). Thereby, the generation of the above-mentioned bubbles can be suppressed.
[流量]
此外,由於在液滴處理之後的混合部324以及混合管323的內部中存在有混合液,因此會產生氣泡。而且,在推出處理中,置換液(在此為純水)推出混合液並使混合液從噴嘴31噴出。此時,混合液中的氣泡亦隨著混合液以及純水的流動而移動並從噴嘴31噴出。然而,亦有殘留一部分的氣泡的可能性。
[flow]
In addition, since the mixed liquid exists in the
因此,只要將推出處理中的置換液的流量設高即可。圖11係顯示來自噴嘴31的噴出流量的一例之圖表。如圖11所例示般,推出處理(步驟S8)中的置換液的流量亦可設定成比液滴處理(步驟S5)中的混合液的流量還高。置換液的流量係例如設定成混合液的流量的例如兩倍以上,例如設定成250mL/分鐘左右。Therefore, the flow rate of the replacement liquid in the push-out treatment may be set high. FIG. 11 is a graph showing an example of the discharge flow rate from the
如此,推出處理中的置換液的流量設高,藉此在推出處理中作用於該氣泡的力量變大,容易使該氣泡朝噴嘴31側移動。因此,能更適當地排出該氣泡。In this way, by increasing the flow rate of the replacement liquid in the extrusion process, the force acting on the bubbles in the extrusion process increases, and the bubbles are easily moved toward the
[供給閥的開閉]
亦可在推出處理中反復地切換設置於混合管323的供給閥3231的開閉。圖12係顯示供給閥3231的開閉的一例之時序圖。在圖12的例子中,在液滴處理(步驟S5)中供給閥3231係較長期間地維持開狀態;相對於此,在推出處理(步驟S8)中供給閥3231係反復地切換開閉。
[Opening and closing of supply valve]
The opening and closing of the
藉由此種開閉的切換,供給閥3231會振動。此振動亦會從混合管323傳達至混合部324以及噴嘴31。因此,在這些內部產生氣泡之情形中,該振動亦作用於氣泡,在各個內部中氣泡會因應該振動而移動。因此,即使氣泡在各個內部的段差(例如接頭等段差)處靜止,該氣泡亦會藉由振動從該段差移動並借助置換液的流動而從噴嘴31排出。因此,能更適當地將氣泡從噴嘴31排出。By such switching of opening and closing, the
此外,在推出處理中,設置於第一供給管321的供給閥3211亦可維持開狀態而不反復地切換開閉。或者,亦可反復地切換供給閥3211的開閉。In addition, in the push-out process, the
[推出處理的時序] 參照圖10,推出處理(步驟S8)係只要在從結束液滴處理(步驟S5)直至開始下一次的液滴處理(步驟S5)為止執行即可。亦即,推出處理(步驟S8)係只要在液滴待機時間T1經過為止執行即可。 [Timing of push out processing] Referring to FIG. 10 , the ejection process (step S8 ) may be executed from the end of the droplet process (step S5 ) until the start of the next droplet process (step S5 ). That is, the ejection process (step S8 ) may be executed until the droplet standby time T1 elapses.
例如,推出處理(步驟S8)亦可在正在對於下一片基板W(例如基板W3)的基板處理中時執行。例如,如圖10中以二點鏈線所示般,亦可與對於下一片基板W3的藥液處理(步驟S3)並行地進行推出處理(步驟S8)。即使在此種情形中,由於能藉由推出處理(步驟S8)排出氣泡,因此能適當地進行對於基板W3的液滴處理(步驟S5)。For example, the push-out process (step S8 ) may be performed while the substrate processing for the next substrate W (eg, the substrate W3 ) is in progress. For example, as shown by the two-dotted chain line in FIG. 10 , the push-out process (step S8 ) may be performed in parallel with the chemical solution process (step S3 ) for the next substrate W3 . Even in this case, since the air bubbles can be discharged by the ejection process (step S8 ), the droplet process on the substrate W3 can be appropriately performed (step S5 ).
然而,在液滴待機時間T1中,由於隨著時間的經過氣泡的量會增加,因此當以較慢的時序進行推出處理時,氣泡的排出會稍微變得困難。因此,期望以較快的時序進行推出處理。例如,期望直至下一片基板W3搬入(步驟S1)為止開始推出處理。However, in the droplet standby time T1, since the amount of air bubbles increases over time, when the ejection process is performed at a slow timing, it becomes slightly difficult to discharge air bubbles. Therefore, it is desirable to perform push-out processing at a faster timing. For example, it is desirable to start the push-out process until the next board W3 is carried in (step S1 ).
例如,亦可在從處理單元10搬出基板W2後直至下一片基板W3被搬入至處理單元10為止之空轉(idling)期間中執行推出處理(步驟S8)即可。在圖10的例子中以基板W2的搬出(步驟S7)與下一片基板W3的搬入(步驟S1)之間的二點鏈線顯示推出處理(步驟S8)。藉此,由於以較早的時序進行推出處理(步驟S8),因此能在氣泡更少的狀態下進行推出處理(步驟S8)。因此,能在推出處理中更適當地排出氣泡。For example, the push-out process (step S8 ) may be performed during an idling period after the substrate W2 is unloaded from the
更佳為,直至結束對於基板W2的乾燥處理(步驟S6)為止,開始推出處理(步驟S8)。藉此,由於能以更早的時序進行推出處理(步驟S8),因此能更適當地排出氣泡。More preferably, the push-out process is started (step S8 ) until the drying process for the substrate W2 is completed (step S6 ). Thereby, since the push-out process (step S8) can be performed at an earlier time sequence, air bubbles can be discharged more appropriately.
此外,在上述的推出處理的執行時序的說明中,雖然參照顯示了基準時間Tref的圖10,然而採用基準時間Tref作為推出處理的開始觸發之構成並非是必須的。即使在結束液滴處理後常態地進行推出處理之情形中,推出處理係只要直至開始下一次的液滴處理為止進行即可。當然,如上所述,以容易排出氣泡的觀點來看,期望以更早的時序進行推出處理。In addition, in the description of the execution sequence of the extraction process described above, reference is made to FIG. 10 showing the reference time Tref, but the configuration using the reference time Tref as the start trigger of the extraction process is not essential. Even in the case where the ejection treatment is normally performed after the droplet treatment is completed, the ejection treatment may be performed until the next droplet treatment is started. Of course, as described above, it is desirable to perform the push-out processing at an earlier timing from the viewpoint of easily discharging air bubbles.
[混合管的容量]
隨著混合管323的容量變大,為了將混合管323的內部的混合液置換成置換液所需要的置換液的量變大。藉此,置換液的消耗量增加。因此,混合管323的容量係例如設定成20mL以下,較佳為設定成10mL以下。藉此,能使置換液的消耗量減少。
[Capacity of mixing tube]
As the capacity of the mixing
[基準時間的設定] 當溶解度高的異丙醇的濃度變高時,氣泡的量會變大。因此,當配合異丙醇的濃度高之情形來設定基準時間Tref時,基準時間Tref係被設定成更小的值。在此情形中,若在液滴處理所噴出的混合液的異丙醇濃度低也沒關係,則即使液滴待機時間T1為基準時間Tref以上,開始下一次的液滴處理時的氣泡的量亦有未滿容許量的可能性。在此情形中,執行不必要的推出處理。 [Setting the reference time] When the concentration of isopropyl alcohol with high solubility becomes higher, the amount of bubbles becomes larger. Therefore, when the reference time Tref is set according to the high concentration of isopropyl alcohol, the reference time Tref is set to a smaller value. In this case, it does not matter if the isopropanol concentration of the liquid mixture ejected during the droplet processing is low, the amount of bubbles at the start of the next droplet processing will not matter even if the droplet standby time T1 is equal to or longer than the reference time Tref. There is a possibility that the tolerance is not met. In this case, unnecessary push-out processing is performed.
另一方面,當配合異丙醇濃度低之情形來設定基準時間Tref時,基準時間Tref係被設定成更大的值。在此情形中,若在液滴處理噴出的混合液的異丙醇的濃度變高,則即使液滴待機時間T1未滿基準時間Tref,則亦會有開始下一次的液滴處理時的氣泡的量超過容許量的可能性。在此情形中,在下一次的液滴處理中產生問題。On the other hand, when the reference time Tref is set according to the low isopropyl alcohol concentration, the reference time Tref is set to a larger value. In this case, if the concentration of isopropyl alcohol in the mixed liquid discharged during the droplet processing increases, even if the droplet standby time T1 is less than the reference time Tref, there will be bubbles at the start of the next droplet processing. the possibility that the amount exceeds the allowable amount. In this case, a problem arises in the next droplet processing.
因此,控制部90亦可為液滴處理中的混合液的異丙醇濃度越高則將基準時間Tref設定成越短。例如,基準時間Tref係可相對於異丙醇的濃度的增加而階段性地設短,或者亦可相對於異丙醇的濃度的增加而單調減少(例如比例)地設短。基準時間Tref與異丙醇的濃度之間的關係亦可例如以表或者數學式等來設定。Therefore, the
異丙醇的濃度的資訊係包含於用以規定基板的處理之程序資訊等。控制部90係從程序資訊讀取使用於液滴處理之混合液中的異丙醇的濃度的資訊,並基於該異丙醇的濃度與上述關係來設定基準時間Tref。The information on the concentration of isopropyl alcohol is included in program information and the like for specifying the treatment of the substrate. The
藉此,能抑制不需要的推出處理的執行並能抑制下一次的液滴處理中的問題。Thereby, execution of unnecessary ejection processing can be suppressed, and problems in the next droplet processing can be suppressed.
[配管系統]
混合部324以及混合管323只要以內部中的段差或者彎曲角變少之方式設計即可。藉此,能抑制氣泡卡在段差或者彎曲角,從而能容易地排出氣泡。
[Piping system]
The mixing
[第二實施形態] 在第一實施形態中,基於液滴待機時間T1判斷了是否需要推出處理。具體而言,在液滴待機時間T1為預先設定的基準時間Tref以上時,判斷成需要推出處理。此外,由於氣泡的產生量存在偏差,因此為了更確實地避免下一次的液滴處理中的問題,期望將基準時間Tref設定成稍短。然而,如此會有下述情形:若將基準時間Tref設短時,即使在氣泡的產生量變小之情形亦會有進行推出處理之情形。此種不需要的推出處理是不期望的。 [Second Embodiment] In the first embodiment, whether or not the ejection process is necessary is determined based on the droplet standby time T1. Specifically, when the droplet standby time T1 is equal to or longer than the preset reference time Tref, it is determined that the ejection process is necessary. In addition, since the amount of generation of air bubbles varies, it is desirable to set the reference time Tref to be slightly shorter in order to more reliably avoid problems in the next droplet processing. However, in this case, if the reference time Tref is made short, even if the generation amount of air bubbles becomes small, the push-out process may be performed. Such unnecessary push-out processing is undesirable.
因此,在第二實施形態中,監視是否於混合管323的內部產生氣泡,並基於結果來判斷是否需要推出處理。以下,說明第二實施形態。Therefore, in the second embodiment, whether or not air bubbles are generated in the mixing
第二實施形態的基板處理裝置100係與第一實施形態同樣。然而,在第二實施形態中,處理單元10的內部構成係不同。圖13係概略性地顯示第二實施形態的處理單元10的構成的一例之圖。第二實施形態的處理單元10係在有無氣泡檢測部60之點上與第一實施形態的處理單元10不同。The
氣泡檢測部60係檢測在混合管323的內部的混合液中所產生的氣泡。例如,氣泡檢測部60係光學性地檢測該氣泡。作為更具體性的一例,氣泡檢測部60係包含攝影機(camera)61。攝影機61係例如包含屬於固態攝像元件的一種之CCD(Charge Coupled Device;電荷耦合元件)以及透鏡等之光學系統。The air
攝影機61係以至少噴嘴31於待機退避位置處停止的狀態下的混合管323包含於拍攝區域之方式配置。只要於拍攝區域包含有混合管323的長邊方向的一部分即可,無須包含有混合管323的全部。攝影機61係拍攝該拍攝區域,取得拍攝影像資料。攝影機61係將拍攝影像資料輸出至控制部90。The
混合管323係由透明的構材所構成。因此,能夠從外部目視確認混合管323的內部的混合液的狀態。因此,於藉由攝影機61所取得的拍攝影像資料映照有混合管323的內部的混合液。The mixing
控制部90係解析拍攝影像資料,檢測混合管323的內部的氣泡。雖然影像處理的演算法(algorithm)並無特別限制,但概略地說明簡單的一例。例如,將在未產生氣泡的狀態下藉由攝影機61所取得的拍攝影像資料作為參照影像資料預先記憶於記憶媒體93。此外,亦可將拍攝影像資料中之僅包含混合管323的區域予以裁切並將該區域作為參照影像資料預先記憶於記憶媒體93。以下,假定成將該區域作為參照影像資料予以記憶。The
控制部90係基於在液滴待機時間T1中藉由攝影機61所取得的拍攝影像資料與參照影像資料的比較來檢測氣泡。例如,控制部90係將拍攝影像資料中之包含混合管323的區域予以裁切,並算出用以顯示該區域與參照影像資料之間的差異之指標(例如各個像素的差的絕對值的總和)。控制部90係在該指標比基準值還大時判斷成產生無法容許的程度的氣泡。The
此外,在此例子中,可說是控制部90的影像解析功能以及攝影機61構成氣泡檢測部60。當然,亦可為與控制部90不同的另一個控制部係具有該影像解析功能,且該另一個控制部以及攝影機61係構成氣泡檢測部60。In addition, in this example, it can be said that the image analysis function of the
此外,氣泡檢測部60係不一定需要包含攝影機61。例如,氣泡檢測部60亦可包含未圖示的發光器以及受光器。發光器係對混合管323的長邊方向的一部分照射光線。受光器係相對於混合管323的該一部分設置於發光器的相反側,接收透過混合管323的光線。由於受光器所接收的光線的光量係因應混合管323的內部的氣泡的量而變動,因此能基於該光線的光量來檢測氣泡的產生。In addition, the
[基板處理]
關於處理單元10的基板處理之動作的一例係與第一實施形態相同,例如與圖7的流程圖相同。然而,在第二實施形態中,在氣泡檢測部60檢測到無法容許的程度的氣泡時,在混合管323的內部中執行推出處理。
[Substrate processing]
An example of the operation of the substrate processing by the
[推出處理]
圖14係顯示處理單元10的動作的一例之流程圖。此一連串的處理係反復地執行。例如,控制部90係判斷是否已結束液滴處理(步驟S5)(步驟S21)。在液滴處理尚未結束時,控制部90係再次執行步驟S21。
[Push out processing]
FIG. 14 is a flowchart showing an example of the operation of the
在結束液滴處理時,氣泡檢測部60係開始氣泡的檢測動作(步驟S22:檢測工序)。作為具體性的一例,攝影機61係在每個預定時間對拍攝區域進行拍攝,依序取得拍攝影像資料並將該拍攝影像資料輸出至控制部90。控制部90係解析該拍攝影像資料,判斷氣泡的量是否為容許量以上(步驟S23)。該容許量為在下一次的液滴處理中不會產生問題的程度的值,且預先設定。When the droplet processing is completed, the
在氣泡的量未滿容許量時,控制部90係判斷是否已開始對下一片基板W進行液滴處理(步驟S25)。在已開始液滴處理之情形中,結束一連串的處理。亦即,在圖14的例子中,在執行液滴處理的期間中不進行氣泡的檢測動作。反過來說,氣泡的檢測動作係在液滴待機時間T1中進行。藉此,能抑制不必要的處理的執行。When the amount of air bubbles is less than the allowable amount, the
在液滴處理尚未開始之情形中,控制部90係針對下一個取得的拍攝影像資料再次進行步驟S23的判斷。亦即,控制部90係解析下一個拍攝影像資料,並針對該拍攝影像資料判斷氣泡的量是否為容許量以上。In the case where the droplet processing has not started, the
在氣泡的量為容許量以上時,混合液供給部30係執行推出處理(步驟S24)。此推出處理係在開始下一次的液滴處理之前執行。亦即,推出處理係在液滴待機時間T1中執行。藉由推出處理的執行,混合部324以及混合管323的內部的混合液以及氣泡係被置換液(在此為純水)推出並從噴嘴31被噴出。藉此,混合部324以及混合管323的內部的混合液係被置換成純水。因此,能抑制之後的氣泡的產生。接著,控制部90係執行步驟S25。When the amount of air bubbles is equal to or greater than the allowable amount, the mixed
如上所述,在第二實施形態中,混合液供給部30係因應氣泡檢測部60的檢測結果來執行推出處理。藉此,在實際檢測到超過容許量的氣泡時進行推出處理。藉由進行此推出處理,能抑制下一次的液滴處理中產生問題。此外,在未檢測到超過容許量的氣泡時,不執行推出處理。因此,亦能抑制不必要的推出處理的執行。As described above, in the second embodiment, the mixed
如上所述,雖然已詳細地說明基板處理方法以及基板處理裝置100,然而上述說明在全部的態樣中僅為例示,基板處理裝置並未限定於這些態樣。能夠解釋成在未逸離本發明的範圍內能設想未例示的無數個變化例。在上述各個實施形態以及各個變化例中所說明的各個構成只要未相互矛盾即能適當地組合或者省略。As described above, although the substrate processing method and the
例如,在上述的例子中,雖然噴嘴31為雙流體噴嘴,然而亦可為單流體噴嘴。在此情形中,噴嘴31係將包含水的第一處理液與異丙醇的混合液液柱狀地噴出。即使在此情形中,當噴嘴31停止噴出混合液時,在混合部324以及混合管323的內部中氣泡的量亦會隨著時間的經過而增大。在此狀態下,當噴嘴31再次噴出混合液時,因為該氣泡會導致下述情形:來自噴嘴31的混合液會飛散;噴出氣泡的瞬間,混合液的流量會變少;在基板W的上表面的一部分會產生未被混合液覆蓋的區域。此種問題是不佳的,因此期望抑制氣泡的產生。For example, in the above example, although the
因此,即使噴嘴31為單流體噴嘴,處理單元10亦能如第一實施形態或者第二實施形態般在液滴待機時間T1中進行推出處理。藉此,能抑制因為氣泡導致產生問題。Therefore, even if the
此外,在上述的例子中,雖然噴嘴31係朝沿著鉛直方向的噴出方向(中心軸L)噴出混合液,然而並未限定於此。噴嘴31亦可朝相對於鉛直方向呈傾斜的噴出方向(中心軸L)噴出混合液。In addition, in the above-mentioned example, although the
此外,在第一實施形態的具體例中,控制部90係從程序資訊讀出液滴待機時間T1,在液滴待機時間T1為基準時間Tref以上時判斷成需要推出處理。然而,是否需要推出工序的判斷並未限定於此。例如,控制部90亦可測定液滴處理(步驟S5)結束後的經過時間,在該經過時間變成基準時間Tref以上時判斷成需要推出工序。經過時間係例如能藉由未圖示的計時電路來測定。In addition, in the specific example of the first embodiment, the
10:處理單元 20:自轉夾具 21:自轉基座 21a:上表面 22:自轉馬達 23:蓋構件 24:旋轉軸 25:鍔狀構件 26:夾具銷 30:混合液供給部 31,71,81:噴嘴 32:混合液配管系統 33:氣體配管系統 34,74:臂 35,75:升降軸 36,76:噴嘴基台 37,77,83:噴嘴驅動部 39:待機艙 40:處理罩 41:內罩 42:中罩 43:外罩 43a,52a301a:下端部 43b,47b,52b:上端部 43c,52c:折返部 44:底部 45:內壁部 46:外壁部 47:第一導引部 48:中壁部 49:廢棄溝槽 50:內側回收溝槽 51:外側回收溝槽 52:第二導引部 53:處理液分離壁 60:氣泡檢測部 61:攝影機 70:藥液供給部 72:藥液配管系統 80:清洗液供給部 82:清洗液配管系統 90:控制部 91:處理部 92,93:記憶媒體 100:基板處理裝置 110:基板載置部 301:外筒 302:內筒 302a:大徑部分 302b:小徑部分 303:內部空間(混合液流路) 304:開口(混合液噴出口) 305:間隙(氣體流路) 306:導入管 307:開口(氣體噴出口) 308:凸緣 309:貫通孔 310:短筒部 311:空間 321:第一供給管 322:第二供給管 323:混合管 324:混合部 331:氣體供給管 332,722,822,3211,3221,3231:供給閥 333:流量調整部 334:過濾器 335:氣體供給源 721:藥液供給管 723,823,3212,3222:流量調整閥 724,824,3213,3223:流量計 725:藥液供給源 821:清洗液供給管 825:清洗液供給源 3214:第一處理液供給源 3224:第二處理液供給源 C:承載器 CR:中心機器人 CX:旋轉軸線 D:排列方向 F:點(收斂點) H:手部 IR:索引機器人 L:中心軸 LP:裝載埠 S1:保持工序(搬入保持) S2:旋轉 S3:藥液處理 S4:清洗處理 S5:混合液供給工序(液滴處理) S6:乾燥工序(乾燥處理) S7:搬出 S8:置換工序(推出處理) T1:液滴待機時間 Tref:基準時間 W,W1,W2,W3:基板(半導體基板) 10: Processing unit 20: Rotation fixture 21: Rotation base 21a: upper surface 22: Autorotation motor 23: Cover member 24: Rotary axis 25: Flange member 26: Clamp Pin 30: Mixed solution supply part 31,71,81: Nozzle 32: Mixed liquid piping system 33: Gas piping system 34,74: Arm 35,75: Lifting shaft 36,76: Nozzle base 37, 77, 83: Nozzle Drive 39: Standby cabin 40: Handling hood 41: inner cover 42: Middle cover 43: Cover 43a, 52a301a: lower end 43b, 47b, 52b: upper end 43c, 52c: Turn-back part 44: Bottom 45: inner wall 46: Outer wall 47: The first guide 48: Middle wall 49: Abandoned Trench 50: Inside recovery groove 51: Outer recovery groove 52: Second guide part 53: Treatment liquid separation wall 60: Bubble detection section 61: Camera 70: Liquid medicine supply department 72: Chemical liquid piping system 80: Cleaning fluid supply part 82: Cleaning fluid piping system 90: Control Department 91: Processing Department 92, 93: Memory Media 100: Substrate processing device 110: Substrate mounting part 301: outer cylinder 302: inner cylinder 302a: Large diameter section 302b: Trail Section 303: Internal space (mixed liquid flow path) 304: Opening (mixed liquid ejection port) 305: Clearance (gas flow path) 306: Import Tube 307: Opening (gas outlet) 308: Flange 309: Through hole 310: Short barrel 311: Space 321: First supply pipe 322: Second supply pipe 323: Mixing Tube 324: Mixed Ministry 331: Gas supply pipe 332,722,822,3211,3221,3231: Supply valve 333: Flow Adjustment Department 334: Filter 335: Gas supply source 721: Liquid medicine supply pipe 723, 823, 3212, 3222: Flow adjustment valve 724, 824, 3213, 3223: Flowmeters 725: Liquid supply source 821: Cleaning fluid supply pipe 825: Cleaning fluid supply source 3214: The first treatment liquid supply source 3224: The second treatment liquid supply source C: Carrier CR: Center Robot CX: axis of rotation D: Arrangement direction F: point (convergence point) H: hand IR: Index Robot L: center axis LP: Load port S1: Holding process (carrying in and holding) S2: Rotate S3: Liquid treatment S4: Cleaning treatment S5: Mixed solution supply process (droplet treatment) S6: drying process (drying treatment) S7: Move out S8: Replacement process (extrusion process) T1: Droplet standby time Tref: base time W, W1, W2, W3: Substrate (semiconductor substrate)
[圖1]係概略性地顯示基板處理裝置的整體構成的一例之圖。 [圖2]係概略性地顯示第一實施形態的處理單元的構成的一例之側視圖。 [圖3]係概略性地顯示噴嘴的構成的一例之縱剖視圖。 [圖4]係概略性地顯示混合液供給部的構成的一例之圖。 [圖5]係概略性地顯示藥液供給部的構成的一例之圖。 [圖6]係概略性地顯示控制部的構成的一例之功能方塊圖。 [圖7]係顯示基板處理的流程的一例之流程圖。 [圖8]係概略性地顯示是否需要推出處理的判斷的一例之流程圖。 [圖9]係顯示基板處理的流程的一例之流程圖。 [圖10]係時間系列地顯示基板處理的各個步驟之圖。 [圖11]係顯示噴嘴的噴出流量的一例之圖表。 [圖12]係顯示設置於混合管之供給閥的開閉的一例之時序圖。 [圖13]係概略性地顯示第二實施形態的處理單元的構成的一例之側視圖。 [圖14]係顯示處理單元的動作的一例之流程圖。 1 is a diagram schematically showing an example of the overall configuration of a substrate processing apparatus. 2 is a side view schematically showing an example of the configuration of the processing unit according to the first embodiment. 3 is a longitudinal cross-sectional view schematically showing an example of the configuration of the nozzle. [ Fig. 4] Fig. 4 is a diagram schematically showing an example of the configuration of the mixed solution supply unit. [ Fig. 5] Fig. 5 is a diagram schematically showing an example of the configuration of the chemical solution supply unit. FIG. 6 is a functional block diagram schematically showing an example of the configuration of the control unit. FIG. 7 is a flowchart showing an example of the flow of substrate processing. FIG. 8 is a flowchart schematically showing an example of the judgment of whether or not the push-out process is necessary. 9 is a flowchart showing an example of the flow of substrate processing. [FIG. 10] It is a figure which shows each step of a board|substrate process in time series. 11 is a graph showing an example of the discharge flow rate of the nozzle. 12 is a timing chart showing an example of opening and closing of the supply valve provided in the mixing tube. 13 is a side view schematically showing an example of the configuration of the processing unit according to the second embodiment. 14 is a flowchart showing an example of the operation of the processing unit.
S1:保持工序(搬入保持) S1: Holding process (carrying in and holding)
S2:旋轉 S2: Rotate
S3:藥液處理 S3: Liquid treatment
S4:清洗處理 S4: Cleaning treatment
S5:混合液供給工序(液滴處理) S5: Mixed solution supply process (droplet treatment)
S6:乾燥工序(乾燥處理) S6: drying process (drying treatment)
S7:搬出 S7: Move out
S8:置換工序(推出處理) S8: Replacement process (extrusion process)
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