TW202211415A - Method of bonding copper pillar to pcb by pressurizing copper pillar - Google Patents

Method of bonding copper pillar to pcb by pressurizing copper pillar Download PDF

Info

Publication number
TW202211415A
TW202211415A TW110124742A TW110124742A TW202211415A TW 202211415 A TW202211415 A TW 202211415A TW 110124742 A TW110124742 A TW 110124742A TW 110124742 A TW110124742 A TW 110124742A TW 202211415 A TW202211415 A TW 202211415A
Authority
TW
Taiwan
Prior art keywords
inner diameter
copper pillar
substrate
copper
diameter portion
Prior art date
Application number
TW110124742A
Other languages
Chinese (zh)
Other versions
TWI780805B (en
Inventor
高允成
安根植
Original Assignee
南韓商普羅科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南韓商普羅科技有限公司 filed Critical 南韓商普羅科技有限公司
Publication of TW202211415A publication Critical patent/TW202211415A/en
Application granted granted Critical
Publication of TWI780805B publication Critical patent/TWI780805B/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492Bases or plates or solder therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492Bases or plates or solder therefor
    • H01L23/4924Bases or plates or solder therefor characterised by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/11001Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/11003Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the bump preform
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/11001Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/11005Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for aligning the bump connector, e.g. marks, spacers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/741Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/742Apparatus for manufacturing bump connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

The present invention relates to a copper-pillar substrate pressure bonding method and, more specifically, to a copper-pillar substrate pressure bonding method for bonding with high precision by effectively arranging cylindrical copper pillars on a substrate. The copper-pillar substrate pressure bonding method of the present invention has an effect of ensuring that a step of mounting very small-sized copper pillars on a substrate can be accurately and effectively performed.

Description

加壓式銅柱基板結合方法Pressurized copper pillar substrate bonding method

本發明是有關於一種加壓式銅柱基板結合方法,更詳細而言是有關於一種將圓柱形態的銅柱有效地配置於基板進行高精密度地結合的加壓式銅柱基板結合方法。The present invention relates to a press-type copper pillar-substrate bonding method, and more specifically, a press-type copper pillar-substrate bonding method for efficiently arranging a cylindrical copper pillar on a substrate for high-precision bonding.

在裝配包括大規模積體電路(Large Scale Integration,LSI)、液晶顯示器(Liquid Crystal Display,LCD)的半導體裝置等時,使用如焊料球(solder ball)等導電球進行電性連接的情況居多。When assembling a semiconductor device including a Large Scale Integration (LSI), a Liquid Crystal Display (LCD), and the like, conductive balls such as solder balls are often used for electrical connection.

最近,使用圓柱形態的銅柱(copper pillar)代替如上所述的導電球的情況正在增加。它是一種藉由在半導體晶片與基板之間配置銅柱來彼此結合以達成基板與半導體晶片的電性連接的方法。Recently, the use of cylindrical copper pillars in place of the conductive balls as described above is increasing. It is a method for achieving electrical connection between the substrate and the semiconductor chip by arranging copper pillars between the semiconductor chip and the substrate to bond with each other.

在使用銅柱時,與使用焊料球的情況相比可以更窄的間隔配置電極,從而可達成半導體晶片或半導體封裝的小型化及高積體化。When copper pillars are used, electrodes can be arranged at narrower intervals than when solder balls are used, so that miniaturization and high integration of a semiconductor wafer or a semiconductor package can be achieved.

與以球形態形成的焊料球不同,銅柱形成為圓柱形態,因此,為了將如上所述的銅柱準確地配置並結合至基板的電極接墊上,需要與先前的焊料球搭載方法不同的單獨的製程。Unlike the solder balls formed in the form of balls, the copper pillars are formed in a cylindrical shape. Therefore, in order to accurately arrange and bond the copper pillars to the electrode pads of the substrate as described above, a separate method different from the conventional solder ball mounting method is required. process.

特別是,由於是比焊料球更小的大小且以圓柱形態形成的銅柱的結構特徵,因此存在難以將精細的銅柱放置並配置於基板的準確位置以結合至電極接墊的困難。由於銅柱的結構形狀或重量,在將焊料漿料熔融的過程中經常會存在銅柱的位置與方向改變的問題。在發生如上所述的現象時,即使使用銅柱將半導體晶片或封裝結合至基板亦由於電性連接不完全而產生不良。In particular, due to the structural features of the copper pillars, which are smaller in size than solder balls and are formed in a cylindrical state, there is a difficulty in placing and arranging fine copper pillars at precise positions on the substrate for bonding to the electrode pads. Due to the structural shape or weight of the copper pillars, there is often a problem of changing the position and orientation of the copper pillars during the process of melting the solder paste. When the above-mentioned phenomenon occurs, even if copper pillars are used to bond the semiconductor chip or package to the substrate, a defect occurs due to incomplete electrical connection.

[發明所欲解決之課題][The problem to be solved by the invention]

本發明是為了解決如上所述的困難而提出的,其目的在於提供一種可有效地將小的大小的銅柱結合至基板的準確位置的加壓式銅柱基板結合方法。 [解決課題之手段]The present invention has been made in order to solve the above-mentioned difficulties, and an object thereof is to provide a pressurized copper pillar-substrate bonding method that can efficiently bond a small-sized copper pillar to an accurate position of a substrate. [Means of Solving Problems]

為了解決如上所述的目的,本發明的加壓式銅柱基板結合方法為將由圓柱形態形成的銅柱結合至基板的電極接墊的加壓式銅柱基板結合方法,其特徵在於包括以下步驟:(a)步驟:使所述銅柱搭載在於電極接墊處印刷有焊料漿料的所述基板的各電極接墊;(b)步驟:在配置於所述基板上的銅柱上配置平板形態的加壓部件,以對所述銅柱進行加壓;以及(c)步驟:對印刷至所述基板的焊料漿料進行加熱,以將所述銅柱結合至所述基板。 [發明的效果]In order to solve the above-mentioned object, the pressurized copper pillar substrate bonding method of the present invention is a pressurized copper pillar substrate bonding method for bonding a copper pillar formed in a cylindrical state to an electrode pad of a substrate, and is characterized by comprising the following steps : (a) step: making the copper pillars mounted on each electrode pad of the substrate on which the solder paste is printed at the electrode pads; (b) step: disposing a flat plate on the copper pillars arranged on the substrate and (c) step: heating the solder paste printed to the substrate to bond the copper pillars to the substrate. [Effect of invention]

本發明的加壓式銅柱基板結合方法具有以下效果:可準確且有效地執行將非常小的大小的銅柱搭載在基板的製程。The press-type copper pillar substrate bonding method of the present invention has the following effects: the process of mounting copper pillars of very small size on the substrate can be performed accurately and efficiently.

以下,將參照附圖對用於實施根據本發明的加壓式銅柱基板結合方法的銅柱搭載裝置詳細地進行說明。Hereinafter, a copper pillar mounting apparatus for implementing the pressurized copper pillar substrate bonding method according to the present invention will be described in detail with reference to the accompanying drawings.

圖1是用於實施根據本發明的加壓式銅柱基板結合方法的一例的銅柱搭載裝置的構成圖。FIG. 1 is a configuration diagram of a copper pillar mounting apparatus for implementing an example of a pressurized copper pillar substrate bonding method according to the present invention.

參照圖1,用於實施本實施例的加壓式銅柱基板結合方法的銅柱搭載裝置包括遮罩(200)、基板支撐模組(500)及安裝模組(300)來構成。Referring to FIG. 1 , a copper pillar mounting device for implementing the pressurized copper pillar substrate bonding method of the present embodiment includes a mask (200), a substrate support module (500) and an installation module (300).

遮罩(200)形成為薄的金屬平板形態。參照圖2,在金屬平板形態的遮罩本體(201)中以貫通遮罩本體(201)的上下的方式形成有多個安裝孔(210)。使用遮罩(200),將裝配在基板(100)的圓柱形態的銅柱(copper pillar)(P)配置於預定位置,以準備將其結合至基板(100)。The mask (200) is formed in the form of a thin metal plate. Referring to FIG. 2 , a plurality of mounting holes ( 210 ) are formed in the shield body ( 201 ) in the form of a flat metal plate so as to penetrate through the upper and lower sides of the shield body ( 201 ). Using the mask (200), the copper pillars (P) assembled in the cylindrical state of the substrate (100) are arranged in predetermined positions in preparation for bonding to the substrate (100).

在遮罩本體(201)的與銅柱(P)欲裝配在基板(100)的位置對應的位置處形成安裝孔(210)。為了防止兩個以上的銅柱(P)搭載在遮罩(200)的安裝孔(210),安裝孔(210)的深度大致以與銅柱(P)的高度類似地形成。安裝孔(210)的深度、即遮罩本體(201)的厚度可略大於銅柱(P)的高度或略小於銅柱(P)的高度。A mounting hole (210) is formed at a position of the shield body (201) corresponding to the position where the copper post (P) is to be assembled on the substrate (100). In order to prevent two or more copper pillars (P) from being mounted on the mounting hole (210) of the mask (200), the depth of the mounting hole (210) is formed substantially similar to the height of the copper pillar (P). The depth of the mounting hole (210), that is, the thickness of the shield body (201) may be slightly larger than the height of the copper pillar (P) or slightly smaller than the height of the copper pillar (P).

參照圖2,安裝孔(210)包括上側內徑部(212)與下側內徑部(211)。上側內徑部(212)對應於安裝孔(210)的上部,且下側內徑部(211)對應於安裝孔(210)的下部。即,上側內徑部(212)以貫通遮罩本體(201)的上表面的方式形成,且下側內徑部(211)以貫通遮罩本體(201)的下表面的方式形成。下側內徑部(211)的內徑(D1)以大於銅柱(P)的外徑且小於上側內徑部(212)的內徑(D2)的方式形成。上側內徑部(212)及下側內徑部(211)的內徑可分別沿上下方向固定地形成,且亦可以內徑逐漸改變的方式形成。較佳為上側內徑部(212)的上端部內徑(D2)以比下側內徑部(211)的下端部內徑(D1)大的方式形成。由於如上所述的安裝孔(210)的結構,可容易地實施將銅柱(P)搭載在安裝孔(210)的製程。另外,較佳為遮罩(200)的下側內徑部(211)的高度(H1)可以大於上側內徑部(212)的高度(H2)的方式形成。藉由如上所述的構成,銅柱(P)被上側內徑部(212)有效地引導至下側內徑部(211)側,且一旦將銅柱(P)插入至下側內徑部(211)就不會與下側內徑部(211)分離。Referring to FIG. 2 , the mounting hole (210) includes an upper inner diameter portion (212) and a lower inner diameter portion (211). The upper inner diameter portion (212) corresponds to the upper portion of the mounting hole (210), and the lower inner diameter portion (211) corresponds to the lower portion of the mounting hole (210). That is, the upper inner diameter portion (212) is formed to penetrate the upper surface of the shield body (201), and the lower inner diameter portion (211) is formed to penetrate the lower surface of the shield body (201). The inner diameter ( D1 ) of the lower inner diameter portion ( 211 ) is formed to be larger than the outer diameter of the copper pillar (P) and smaller than the inner diameter ( D2 ) of the upper inner diameter portion ( 212 ). The inner diameters of the upper inner diameter portion ( 212 ) and the lower inner diameter portion ( 211 ) may be formed to be fixed in the up-down direction, respectively, or may be formed such that the inner diameters gradually change. Preferably, the inner diameter ( D2 ) of the upper end portion of the upper inner diameter portion ( 212 ) is formed to be larger than the inner diameter ( D1 ) of the lower end portion of the lower inner diameter portion ( 211 ). Due to the structure of the mounting hole ( 210 ) as described above, the process of mounting the copper post (P) in the mounting hole ( 210 ) can be easily performed. In addition, it is preferable that the height ( H1 ) of the lower inner diameter portion ( 211 ) of the mask ( 200 ) may be larger than the height ( H2 ) of the upper inner diameter portion ( 212 ). With the above configuration, the copper pillar (P) is effectively guided to the lower inner diameter portion (211) side by the upper inner diameter portion (212), and once the copper pillar (P) is inserted into the lower inner diameter portion (211) is not separated from the lower inner diameter portion (211).

另一方面,較佳為上側內徑部(212)的內徑(D2)與下側內徑部(211)的內徑(D1)之差以比銅柱(P)的外徑與下側內徑部(211)的內徑(D1)之差大的方式形成。藉由如上所述的結構,可有效地將銅柱(P)引導至下側內徑部(211)。另外,可提高插入至下側內徑部(211)的銅柱(P)的位置精確度。On the other hand, it is preferable that the difference between the inner diameter (D2) of the upper inner diameter portion (212) and the inner diameter (D1) of the lower inner diameter portion (211) is larger than the outer diameter of the copper pillar (P) and the lower side The inner diameter portion ( 211 ) is formed so that the difference between the inner diameters ( D1 ) of the inner diameter portion ( 211 ) is large. With the above-described structure, the copper pillar (P) can be efficiently guided to the lower inner diameter portion (211). In addition, the positional accuracy of the copper pillar (P) inserted into the lower inner diameter portion (211) can be improved.

以下,對使用如上所述構成的遮罩(200)來實施根據本發明的加壓式銅柱基板結合方法的一例的過程進行說明。Hereinafter, the process of implementing an example of the pressurized copper pillar substrate bonding method according to the present invention using the mask ( 200 ) configured as described above will be described.

首先,如圖1所示,準備在各個電極接墊(110)印刷有焊料漿料的基板(100)((a-1)步驟)。通常,使用絲網印刷(screen printing)方式將焊料漿料印刷至基板(100)。First, as shown in FIG. 1 , a substrate ( 100 ) with solder paste printed on each electrode pad ( 110 ) is prepared (step (a-1)). Typically, the solder paste is printed to the substrate (100) using screen printing.

接著,準備如前述說明般構成的遮罩(200),並如圖1所示般進行水平配置((a-2)步驟)。Next, a mask ( 200 ) constructed as described above is prepared and horizontally arranged as shown in FIG. 1 (step (a-2)).

在如上所述配置的遮罩(200)的下側配置前文準備的印刷有焊料漿料的基板(100)((a-3)步驟)。基板(100)如圖1所示般配置並固定至基板支撐模組(500)。基板支撐模組(500)以可調整基板(100)的位置與方向的方式構成。The substrate ( 100 ) printed with the solder paste prepared above is placed on the lower side of the mask ( 200 ) configured as described above (step (a-3)). The substrate (100) is configured and fixed to the substrate support module (500) as shown in FIG. 1 . The substrate supporting module (500) is configured in such a way that the position and direction of the substrate (100) can be adjusted.

在如上所述的狀態下,使銅柱(P)相對於遮罩(200)的上表面移動以將銅柱(P)搭載在遮罩(200)的安裝孔(210)的下側內徑部(211)((a-4)步驟)。如上所述,藉由將銅柱(P)搭載在安裝孔(210)的下側內徑部(211),從而使銅柱(P)分別與印刷在基板(100)的電極接墊(110)的焊料漿料接觸。In the state as described above, the copper post (P) is moved relative to the upper surface of the mask (200) to mount the copper post (P) on the inner diameter of the lower side of the mounting hole (210) of the mask (200). Section (211) (step (a-4)). As described above, by mounting the copper pillars (P) on the lower inner diameter portion (211) of the mounting hole (210), the copper pillars (P) are respectively connected to the electrode pads (110) printed on the substrate (100). ) of the solder paste contacts.

銅柱(P)由銅或銅合金材質的圓柱形態形成。根據情況,亦可使用形成為如八角柱或六角柱等各種形態的銅柱(P)而非圓柱。The copper pillar (P) is formed from a cylindrical shape of copper or copper alloy material. Depending on the situation, copper pillars (P) formed in various forms such as octagonal pillars or hexagonal pillars may be used instead of columns.

通常,銅柱(P)的高度以大於銅柱(P)的外徑的方式形成。在使銅柱(P)相對於遮罩(200)的上表面沿隨機方向移動時,銅柱(P)搭載在安裝孔(210)。如前文說明所示,由於安裝孔(210)的上側內徑部(212)的內徑大於下側內徑部(211)的內徑,因此銅柱(P)可更容易地插入至安裝孔(210)。由於以比下側內徑部(211)更大的方式形成的上側內徑部(212)的結構,銅柱(P)的一部分嵌入上側內徑部(212)的概率增大。當銅柱(P)的一部分嵌入至上側內徑部(212)時,由於上側內徑部(212)的結構,銅柱(P)被引導朝向下側內徑部(211)移動的概率增大。如上所述,由於包括上側內徑部(212)與下側內徑部(211)的安裝孔(210)的結構,銅柱(P)搭載在安裝孔(210)的概率增大。因此,提高將銅柱(P)搭載在安裝孔(210)的製程的時間與產率,並降低銅柱(P)未搭載在安裝孔(210)中而被遺漏的概率。Generally, the height of the copper pillar (P) is formed to be larger than the outer diameter of the copper pillar (P). When the copper pillars (P) are moved in random directions with respect to the upper surface of the mask (200), the copper pillars (P) are mounted on the mounting holes (210). As described above, since the inner diameter of the upper inner diameter portion (212) of the mounting hole (210) is larger than the inner diameter of the lower inner diameter portion (211), the copper post (P) can be inserted into the mounting hole more easily (210). Due to the structure of the upper inner diameter portion ( 212 ) formed to be larger than the lower inner diameter portion ( 211 ), the probability that a part of the copper pillar (P) is embedded in the upper inner diameter portion ( 212 ) increases. When a part of the copper pillar (P) is embedded in the upper inner diameter portion (212), the probability that the copper pillar (P) is guided to move toward the lower inner diameter portion (211) increases due to the structure of the upper inner diameter portion (212). big. As described above, due to the structure of the mounting hole (210) including the upper inner diameter portion (212) and the lower inner diameter portion (211), the probability that the copper pillar (P) is mounted in the mounting hole (210) increases. Therefore, the time and yield of the process of mounting the copper pillar (P) in the mounting hole ( 210 ) is improved, and the probability that the copper pillar (P) is not mounted in the mounting hole ( 210 ) and is missed is reduced.

可使用各種構成作為用於使銅柱(P)相對於遮罩(200)的上表面移動的單元。在本實施例中,使用圖1所示形態的安裝模組(300)將銅柱(P)搭載在遮罩(200)的安裝孔(210)。圖1所示的安裝模組(300)是被稱為旋風頭(cyclone head)形態的安裝模組(300)。Various constitutions can be used as the unit for moving the copper pillar (P) relative to the upper surface of the mask (200). In this embodiment, the copper post (P) is mounted on the mounting hole (210) of the cover (200) using the mounting module (300) of the form shown in FIG. 1 . The installation module ( 300 ) shown in FIG. 1 is a type of installation module ( 300 ) called a cyclone head.

安裝模組(300)包括收容部件(310)與噴射口(311)。收容部件(310)由圓桶形容器形態形成以可收容多個銅柱(P)。噴射口(311)以藉由收容部件(310)的內壁連接至收容部件(310)的下端部的方式形成,且以可向收容部件(310)的內側噴射壓縮空氣的方式形成。當藉由噴射口(311)噴射壓縮空氣時,收容部件(310)內側的銅柱(P)藉由空氣的壓力在任意方向上彈跳同時快速移動。如上所述,當多個銅柱(P)以高密度收容在收容部件(310)的內部中的狀態下沿任意方向移動而一部分被卡在安裝孔(210)的上側內徑部(212)並移動至下側內徑部(211)的概率增大。在以如上所述的狀態使收容部件(310)沿遮罩(200)的上表面水平移送時,銅柱(P)依次搭載在收容部件(310)所經過的路徑的安裝孔(210)。The installation module (300) includes a receiving part (310) and a spray port (311). The accommodating part (310) is formed in the shape of a barrel-shaped container to accommodate a plurality of copper pillars (P). The injection port (311) is formed so as to be connected to the lower end of the accommodating member (310) through the inner wall of the accommodating member (310), and is formed in such a manner that compressed air can be injected into the inner side of the accommodating member (310). When the compressed air is sprayed through the spray port (311), the copper column (P) inside the accommodating part (310) bounces in any direction and moves rapidly by the pressure of the air. As described above, when the plurality of copper pillars (P) are accommodated in the interior of the accommodating member (310) at a high density and move in any direction, a part of them is caught in the upper inner diameter portion (212) of the mounting hole (210). And the probability of moving to the lower inner diameter part (211) increases. When the accommodating member (310) is moved horizontally along the upper surface of the mask (200) in the above state, the copper pillars (P) are sequentially mounted on the mounting holes (210) of the path through which the accommodating member (310) passes.

如上所述,當銅柱(P)搭載在遮罩(200)的安裝孔(210)時,銅柱(P)由於印刷在電極接墊(110)的焊料漿料的黏性而處於臨時黏附至基板(100)的狀態。只要不對基板(100)施加較大的衝擊,則銅柱(P)保持附著在基板(100)的狀態。As described above, when the copper posts (P) are mounted on the mounting holes (210) of the mask (200), the copper posts (P) are temporarily adhered due to the viscosity of the solder paste printed on the electrode pads (110). to the state of the substrate (100). As long as a large impact is not applied to the substrate (100), the copper pillar (P) remains attached to the substrate (100).

如上所述完成(a-4)步驟後,如圖3所示,將遮罩(200)相對於基板(100)升起,以實施在基板(100)上僅留下銅柱(P)的過程((a-5)步驟)。After completing step (a-4) as described above, as shown in FIG. 3 , the mask ( 200 ) is raised relative to the substrate ( 100 ) to implement the method of leaving only the copper pillars (P) on the substrate ( 100 ). process (step (a-5)).

接下來,在配置於基板(100)上的銅柱(P)上配置平板形態的加壓部件(401)以對銅柱(P)進行加壓((b)步驟)。如上所述,在藉由加壓部件(401)的重量或壓力對基板(100)按壓銅柱(P)的狀態下結合時可在保持銅柱(P)的位置的同時結合至基板(100)。本實施例的情況,使用由透明材質形成的加壓部件(401)對銅柱(P)加壓。Next, a plate-shaped pressing member ( 401 ) is arranged on the copper column (P) arranged on the substrate ( 100 ) to pressurize the copper column (P) (step (b)). As described above, the bonding to the substrate (100) can be performed while maintaining the position of the copper pillar (P) when bonding in a state where the copper pillar (P) is pressed against the substrate (100) by the weight or pressure of the pressing member (401). ). In the case of this embodiment, the copper pillar (P) is pressurized using a pressurizing member (401) formed of a transparent material.

接下來,對印刷在基板(100)的焊料漿料進行加熱以將銅柱(P)結合至基板(100)的電極接墊(110)((c)步驟)。Next, the solder paste printed on the substrate (100) is heated to bond the copper pillars (P) to the electrode pads (110) of the substrate (100) (step (c)).

可藉由各種方法實施(c)步驟。亦可藉由將基板(100)放置在烘箱進行加熱的方法結合銅柱(P)。Step (c) can be carried out by various methods. The copper pillars (P) can also be combined by placing the substrate (100) in an oven for heating.

由於銅柱(P)的特性,在使焊料漿料熔融的過程中,銅柱(P)的位置與方向可能會隨著焊料漿料的流動而改變,但在本實施例中藉由實施(b)步驟防止發生如上所述的現象。如圖4所示,使用加壓部件(401)對銅柱(P)加壓以移動銅柱(P),並在如上所述的狀態下將銅柱(P)結合至基板(100)。Due to the characteristics of the copper pillar (P), in the process of melting the solder paste, the position and direction of the copper pillar (P) may change with the flow of the solder paste, but in this embodiment by implementing ( b) step prevents the phenomenon described above from occurring. As shown in FIG. 4 , the copper pillar (P) is pressurized using the pressing member ( 401 ) to move the copper pillar (P), and the copper pillar (P) is bonded to the substrate ( 100 ) in the state as described above.

本實施例的情況,藉由加壓部件(401)照射雷射光對焊料漿料進行加熱。雷射光透過透明材質的加壓部件(401)傳遞至銅柱(P)、焊料漿料、電極接墊(110)、基板(100)以傳遞能量。藉由雷射光傳遞的能量對焊料漿料加熱使其熔融,從而將銅柱(P)結合至基板(100)。In the case of this embodiment, the solder paste is heated by irradiating laser light from the pressing member (401). The laser light is transmitted to the copper column (P), the solder paste, the electrode pad (110), and the substrate (100) through the transparent material pressing member (401) to transmit energy. The solder paste is heated and melted by the energy delivered by the laser light, thereby bonding the copper pillars (P) to the substrate (100).

如上所述,藉由以在使用透明材質的加壓部件(401)對銅柱(P)加壓的狀態執行結合製程,從而可提高銅柱(P)結合製程的品質。另外,藉由照射雷射光的方法對焊料漿料及其周圍的構成進行加熱,可具有使焊料漿料快速熔融且可快速地進行對結合的焊料漿料冷卻的優點。同時,可透過雷射光並藉由加壓部件(401)固定或保持銅柱(P)的位置來執行結合製程。藉由使用如上所述的方法,亦可防止基板(100)的熱變形並準確地保持銅柱(P)的位置,從而可提高銅柱(P)結合製程的生產率與品質。As described above, by performing the bonding process in a state where the pressure member ( 401 ) using a transparent material pressurizes the copper pillar (P), the quality of the bonding process for the copper pillar (P) can be improved. In addition, heating the solder paste and its surrounding structures by the method of irradiating the laser light has the advantage that the solder paste can be rapidly melted and the bonded solder paste can be rapidly cooled. At the same time, the bonding process can be performed through the laser light and by fixing or maintaining the position of the copper pillar (P) by the pressing member (401). By using the above method, the thermal deformation of the substrate (100) can also be prevented and the position of the copper pillar (P) can be accurately maintained, thereby improving the productivity and quality of the copper pillar (P) bonding process.

以上儘管已列舉較佳示例對本發明進行了說明,但是本發明的範圍不限於前文說明並圖示的形態。Although the present invention has been described above with reference to preferred examples, the scope of the present invention is not limited to the forms described and illustrated above.

例如,儘管前文對使用圖1所示的安裝模組(300)與遮罩(200)來實施(a)步驟進行了說明,但是可使用除上述方法之外的其他各種方法。可不使用如上所述的遮罩(200)與安裝模組(300)而使用其他各種裝置與構成來實施將銅柱搭載在基板上的(a)步驟。For example, although the foregoing describes the use of the mounting module ( 300 ) and mask ( 200 ) shown in FIG. 1 to perform step (a), various methods other than those described above may be used. The step (a) of mounting the copper pillars on the substrate can be performed without using the above-described mask ( 200 ) and the mounting module ( 300 ) using other various devices and structures.

另外,前文對遮罩(200)包括如圖2所示的上側內徑部(212)與下側內徑部(211)的內徑(D2、D1)固定地形成的安裝孔(210)的情況舉例進行了說明,但可使用包括圖5至圖8所示形態的遮罩的各種結構的遮罩。In addition, as shown in FIG. 2 , the cover ( 200 ) includes a mounting hole ( 210 ) fixedly formed by the inner diameters ( D2 , D1 ) of the upper inner diameter portion ( 212 ) and the lower inner diameter portion ( 211 ). The case is described as an example, but masks of various structures including masks of the forms shown in FIGS. 5 to 8 can be used.

圖5所示的遮罩為以下結構:以形成於遮罩本體(201)的安裝孔(220)的上側內徑部(222)的內徑越向上側越增大的方式形成為錐形形狀。下側內徑部(221)的內徑保持固定,且以比上側內徑部(222)的上端部的內徑小且以與下端部的內徑相同的方式形成。The mask shown in FIG. 5 has a structure in which the inner diameter of the upper inner diameter portion (222) of the mounting hole (220) formed in the mask body (201) is formed in a tapered shape so that the inner diameter increases toward the upper side. . The inner diameter of the lower inner diameter portion ( 221 ) is kept constant, and is smaller than the inner diameter of the upper end portion of the upper inner diameter portion ( 222 ) and formed in the same manner as the inner diameter of the lower end portion.

圖6所示的遮罩為以下結構:形成於遮罩本體(201)的安裝孔(230)的上側內徑部(232)的內徑以越向上側越增大的方式形成多段。下側內徑部(231)的內徑保持固定,且以比上側內徑部(232)的上端部的內徑小的方式形成。The shield shown in FIG. 6 has a structure in which the inner diameter of the upper inner diameter portion (232) formed in the mounting hole (230) of the shield body (201) is formed in multiple stages so as to increase toward the upper side. The inner diameter of the lower inner diameter portion (231) is kept constant, and is formed to be smaller than the inner diameter of the upper end portion of the upper inner diameter portion (232).

圖7所示的遮罩以如下方式形成:形成於遮罩本體(201)的安裝孔(240)的上側內徑部(242)的剖面由曲面形態形成並越向上側越增大。下側內徑部(241)的內徑保持固定。The mask shown in FIG. 7 is formed in such a manner that the cross section of the upper inner diameter portion (242) formed in the mounting hole (240) of the mask body (201) is formed in a curved shape and increases toward the upper side. The inner diameter of the lower inner diameter portion (241) remains fixed.

圖8所示的遮罩以下側內徑部(251)的內徑越向下側越減小的方式形成為錐形形態。上側內徑部(252)的內徑以比下側內徑部(251)的上端部的內徑大的方式形成且保持固定。The mask shown in FIG. 8 is formed in a tapered shape so that the inner diameter of the lower inner diameter portion ( 251 ) decreases toward the lower side. The inner diameter of the upper inner diameter portion (252) is formed to be larger than the inner diameter of the upper end portion of the lower inner diameter portion (251) and is kept fixed.

即使對安裝孔的詳細形狀進行各種變形,亦具有以下優點:藉由使安裝孔的上部的內徑大於下部的內徑,從而容易將銅柱(P)引導插入至下側內徑部同時固定銅柱(P)的位置。Even if various modifications are made to the detailed shape of the mounting hole, there is an advantage in that by making the inner diameter of the upper part of the mounting hole larger than the inner diameter of the lower part, it is easy to guide and insert the copper post (P) to the lower inner diameter part and fix it at the same time The location of the copper pillar (P).

另外,如前文圖4所示,對在藉由透明材質的加壓部件(401)對基板(100)加壓銅柱(P)的狀態下藉由利用加壓部件(401)照射雷射光的方法執行(b)步驟與(c)步驟的情況舉例進行了說明,但亦可使用實施(b)步驟及(c)步驟的其他各種方法。In addition, as shown in FIG. 4 above, in the state where the copper pillar (P) is pressed against the substrate (100) by the pressing member (401) of transparent material, the laser beam is irradiated by the pressing member (401). The case where the method performs the steps (b) and (c) has been described as an example, but various other methods of implementing the steps (b) and (c) can also be used.

如圖9所示,亦可使用將產生並照射雷射光的光源與透明材質的加壓部件(402)一體地形成的發光模組(410)來實施(b)步驟及(c)步驟。將透明材質的加壓部件(402)設置在發光模組(410),使發光模組(410)下降以對銅柱(P)加壓實施(b)步驟,並在此狀態下照射雷射光以實施將銅柱(P)結合至基板(100)的(c)步驟。此時,亦可使用垂直腔表面發射雷射器(Vertical-Cavity Surface-Emitting Laser,VCSEL)(403)作為產生雷射光的光源。As shown in FIG. 9 , steps (b) and (c) may also be implemented using a light-emitting module ( 410 ) in which a light source for generating and irradiating laser light and a pressure member ( 402 ) made of a transparent material are integrally formed. A pressurizing member (402) made of transparent material is arranged on the light-emitting module (410), the light-emitting module (410) is lowered to pressurize the copper column (P) to perform step (b), and the laser light is irradiated in this state to carry out the step (c) of bonding the copper pillars (P) to the substrate (100). At this time, a vertical cavity surface emitting laser (Vertical-Cavity Surface-Emitting Laser, VCSEL) (403) can also be used as a light source for generating laser light.

另外,儘管前文已經對在藉由(a-2)步驟首先配置遮罩(200)的狀態下執行在遮罩(200)的下側配置基板(100)的(a-3)步驟進行了說明,但是(a-2)步驟與(a-3)步驟的順序可能會改變。即,亦可在配置基板(100)的狀態下將遮罩(200)配置於基板(100)的上側並實施(a-4)步驟。In addition, although the foregoing has explained the step (a-3) of arranging the substrate ( 100 ) on the lower side of the mask ( 200 ) in a state where the mask ( 200 ) is firstly arranged by the step (a-2) , but the order of steps (a-2) and (a-3) may change. That is, in the state where the substrate (100) is arranged, the mask (200) may be arranged on the upper side of the substrate (100), and the step (a-4) may be performed.

100:基板 110:電極接墊 200:遮罩 201:遮罩本體 210、220、230、240、250:安裝孔 211、221、231、241、251:下側內徑部 212、222、232、242、252:上側內徑部 300:安裝模組 310:收容部件 311:噴射口 401、402:加壓部件 403:直腔表面發射雷射器 410:發光模組 500:基板支撐模組 D1:下端部內徑/內徑 D2:上端部內徑/內徑 H1、H2:高度 P:銅柱100: Substrate 110: Electrode pads 200:Mask 201: Mask body 210, 220, 230, 240, 250: Mounting holes 211, 221, 231, 241, 251: lower inner diameter part 212, 222, 232, 242, 252: upper inner diameter part 300: Install the mod 310: Containment Parts 311: jet port 401, 402: Pressurized parts 403: Straight Cavity Surface Emitting Laser 410: Lighting module 500: Substrate support module D1: Bottom inner diameter/inner diameter D2: inner diameter/inner diameter of upper end H1, H2: height P: copper pillar

圖1是用於實施根據本發明的加壓式銅柱基板結合方法的一例的銅柱搭載裝置的構成圖。 圖2是將圖1所示的銅柱搭載裝置的遮罩的一部分放大的剖視圖。 圖3及圖4是用於說明使用圖1所示的銅柱搭載裝置實施根據本發明的加壓式銅柱基板結合方法的一例的過程的圖。 圖5至圖8是示出圖2所示遮罩的另一實施例的部分放大剖視圖。 圖9是用於說明根據本發明的加壓式銅柱基板結合方法的另一實施例的圖。FIG. 1 is a configuration diagram of a copper pillar mounting apparatus for implementing an example of a pressurized copper pillar substrate bonding method according to the present invention. FIG. 2 is an enlarged cross-sectional view of a part of a mask of the copper pillar mounting device shown in FIG. 1 . 3 and 4 are diagrams for explaining a process of implementing an example of the pressurized copper pillar substrate bonding method according to the present invention using the copper pillar mounting apparatus shown in FIG. 1 . 5 to 8 are partially enlarged cross-sectional views showing another embodiment of the mask shown in FIG. 2 . FIG. 9 is a diagram for explaining another embodiment of the pressurized copper pillar substrate bonding method according to the present invention.

100:基板100: Substrate

110:電極接墊110: Electrode pads

200:遮罩200:Mask

201:遮罩本體201: Mask body

210:安裝孔210: Mounting holes

300:安裝模組300: Install the mod

310:收容部件310: Containment Parts

311:噴射口311: jet port

500:基板支撐模組500: Substrate support module

P:銅柱P: copper pillar

Claims (13)

一種加壓式銅柱基板結合方法,其為將由圓柱形態形成的銅柱結合至基板的電極接墊的加壓式銅柱基板結合方法,包括以下步驟: (a)步驟:使所述銅柱搭載在於所述電極接墊處印刷有焊料漿料的所述基板的各所述電極接墊處; (b)步驟:在配置於所述基板上的所述銅柱上配置平板形態的加壓部件,以對所述銅柱進行加壓;以及 (c)步驟:對印刷至所述基板的所述焊料漿料進行加熱,以將所述銅柱結合至所述基板。A pressurized copper pillar substrate bonding method, which is a pressurized copper pillar substrate bonding method for bonding a copper pillar formed in a cylindrical state to an electrode pad of a substrate, comprising the following steps: (a) step: making the copper pillars mount on each of the electrode pads of the substrate on which the solder paste is printed on the electrode pads; (b) step: disposing a pressing member in the form of a flat plate on the copper pillar disposed on the substrate to pressurize the copper pillar; and (c) step: heating the solder paste printed to the substrate to bond the copper pillars to the substrate. 如請求項1所述的加壓式銅柱基板結合方法,其中 所述(b)步驟使用透明的加壓部件來執行, 所述(c)步驟藉由所述加壓部件照射雷射光來對印刷至所述基板的所述焊料漿料進行加熱。The pressurized copper pillar substrate bonding method according to claim 1, wherein The step (b) is performed using a transparent pressing member, The step (c) heats the solder paste printed on the substrate by irradiating the pressing member with laser light. 如請求項2所述的加壓式銅柱基板結合方法,其中 所述(b)步驟使用產生並照射雷射光的光源與所述加壓部件一體地形成的發光模組來執行。The pressurized copper pillar substrate bonding method according to claim 2, wherein The step (b) is performed using a light-emitting module in which a light source that generates and irradiates laser light is integrally formed with the pressing member. 如請求項3所述的加壓式銅柱基板結合方法,其中 所述發光模組的光源使用垂直腔表面發射雷射器(VCSEL)來發出雷射光。The pressurized copper pillar substrate bonding method according to claim 3, wherein The light source of the light emitting module uses a vertical cavity surface emitting laser (VCSEL) to emit laser light. 如請求項1至4中任一項所述的加壓式銅柱基板結合方法,其中 所述(a)步驟包括以下步驟: (a-1)步驟:準備在所述電極接墊處印刷有所述焊料漿料的所述基板; (a-2)步驟:準備遮罩並水平地配置所述遮罩,所述遮罩以如下方式形成:具有平板形狀的遮罩本體以及以貫通所述遮罩本體的上下的方式形成的多個安裝孔,所述安裝孔具有以通向所述遮罩本體的上表面的方式形成的上側內徑部以及以通向所述遮罩本體的下表面的方式形成且具有比所述上側內徑部更小的內徑的下側內徑部; (a-3)步驟:將所述基板配置於所述遮罩的下側; (a-4)步驟:相對於所述遮罩的上表面移動所述銅柱,使所述銅柱搭載於所述遮罩的各個安裝孔的下側內徑部,並使所述銅柱接觸印刷至所述基板的所述焊料漿料;以及 (a-5)步驟:完成所述(a-4)步驟後,升起所述遮罩並將所述銅柱留在所述基板上。The pressurized copper pillar substrate bonding method according to any one of claims 1 to 4, wherein The step (a) includes the following steps: (a-1) Step: preparing the substrate with the solder paste printed on the electrode pads; (a-2) Step: preparing a mask and arranging the mask horizontally, the mask is formed by a mask body having a flat plate shape and a plurality of masks formed so as to penetrate the upper and lower sides of the mask body. a mounting hole, the mounting hole has an upper inner diameter portion formed so as to open to the upper surface of the shield body, and is formed so as to open to the lower surface of the shield body and has a larger inner diameter than the upper side. A lower inner diameter portion with a smaller inner diameter; (a-3) step: disposing the substrate on the lower side of the mask; (a-4) Step: move the copper pillars relative to the upper surface of the mask, so that the copper pillars are mounted on the inner diameter portions of the lower sides of the respective mounting holes of the mask, and the copper pillars are moved. contacting the solder paste printed to the substrate; and Step (a-5): After completing the step (a-4), lift the mask and leave the copper pillars on the substrate. 如請求項5所述的加壓式銅柱基板結合方法,其中 所述(a-4)步驟使用使配置於所述遮罩上的所述銅柱移動的安裝模組來執行。The pressurized copper pillar substrate bonding method according to claim 5, wherein The step (a-4) is performed using a mounting module that moves the copper pillars disposed on the mask. 如請求項6所述的加壓式銅柱基板結合方法,其中 執行所述(a-4)步驟的所述安裝模組對所述遮罩上的所述銅柱噴射壓縮空氣,以使所述銅柱向任意方向移動。The pressurized copper pillar substrate bonding method according to claim 6, wherein The installation module performing the step (a-4) sprays compressed air on the copper pillars on the shield to move the copper pillars in any direction. 如請求項7所述的加壓式銅柱基板結合方法,其中 所述(a-4)步驟使所述安裝模組相對於所述遮罩的上表面水平移送來執行, 所述安裝模組具有收容所述銅柱的容器形態的收容部件以及以向所述收容部件的內側噴射壓縮空氣的方式形成於所述收容部件的噴射口。The pressurized copper pillar substrate bonding method according to claim 7, wherein The step (a-4) is performed by moving the mounting module horizontally relative to the upper surface of the mask, The mounting module includes a container-shaped accommodating member for accommodating the copper pillar, and an injection port formed in the accommodating member so as to inject compressed air inside the accommodating member. 如請求項5所述的加壓式銅柱基板結合方法,其中 所述遮罩的安裝孔的上側內徑部的內徑以越向上側越增加的方式形成為錐形形狀。The pressurized copper pillar substrate bonding method according to claim 5, wherein The inner diameter of the upper inner diameter portion of the attachment hole of the shield is formed in a tapered shape so as to increase toward the upper side. 如請求項5所述的加壓式銅柱基板結合方法,其中 所述遮罩的安裝孔的上側內徑部與下側內徑部的內徑分別在上下方向上保持固定,且所述上側內徑部的內徑以比所述下側內徑部的內徑大的方式形成。The pressurized copper pillar substrate bonding method according to claim 5, wherein The inner diameters of the upper inner diameter portion and the lower inner diameter portion of the mounting hole of the shield are respectively kept fixed in the vertical direction, and the inner diameter of the upper inner diameter portion is larger than the inner diameter of the lower inner diameter portion. formed in a large diameter. 如請求項10所述的加壓式銅柱基板結合方法,其中 所述上側內徑部的內徑與下側內徑部的內徑之差以比所述銅柱的外徑與所述下側內徑部的內徑之差大的方式形成。The pressurized copper pillar substrate bonding method according to claim 10, wherein The difference between the inner diameter of the upper inner diameter portion and the inner diameter of the lower inner diameter portion is formed to be larger than the difference between the outer diameter of the copper column and the inner diameter of the lower inner diameter portion. 如請求項10所述的加壓式銅柱基板結合方法,其中 所述遮罩的下側內徑部的高度以比所述上側內徑部的高度大的方式形成。The pressurized copper pillar substrate bonding method according to claim 10, wherein The height of the lower inner diameter portion of the mask is formed to be larger than the height of the upper inner diameter portion. 如請求項5所述的加壓式銅柱基板結合方法,其中 所述遮罩的安裝孔的上側內徑部的內徑以越向上側越增大的方式形成為多段。The pressurized copper pillar substrate bonding method according to claim 5, wherein The inner diameter of the upper inner diameter portion of the attachment hole of the shield is formed in multiple stages so as to increase toward the upper side.
TW110124742A 2020-07-07 2021-07-06 Method of bonding copper pillar to pcb by pressurizing copper pillar TWI780805B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2020-0083247 2020-07-07
KR1020200083247A KR20220005724A (en) 2020-07-07 2020-07-07 Method of Bonding Copper Pillar to PCB by Pressurizing Copper Pillar

Publications (2)

Publication Number Publication Date
TW202211415A true TW202211415A (en) 2022-03-16
TWI780805B TWI780805B (en) 2022-10-11

Family

ID=79342815

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110124742A TWI780805B (en) 2020-07-07 2021-07-06 Method of bonding copper pillar to pcb by pressurizing copper pillar

Country Status (3)

Country Link
KR (1) KR20220005724A (en)
TW (1) TWI780805B (en)
WO (1) WO2022010235A1 (en)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8115310B2 (en) * 2009-06-11 2012-02-14 Texas Instruments Incorporated Copper pillar bonding for fine pitch flip chip devices
KR101103302B1 (en) * 2009-10-08 2012-01-11 엘지이노텍 주식회사 Printed circuit board and method for manufacturing same
SG11201405431TA (en) * 2012-03-07 2014-10-30 Toray Industries Method and apparatus for manufacturing semiconductor device
KR102100867B1 (en) * 2013-06-26 2020-04-14 삼성전자주식회사 Apparatus of Mounting Solder Balls
KR20190092404A (en) * 2016-12-19 2019-08-07 타츠타 전선 주식회사 Package Substrate and Manufacturing Method of Package Substrate
KR101975103B1 (en) * 2017-06-20 2019-05-03 주식회사 프로텍 Apparatus for Laser Bonding of Flip Chip and Method for Laser Bonding of Flip Chip
JP7279639B2 (en) * 2017-11-08 2023-05-23 株式会社レゾナック Bonded body manufacturing method and bonding material
KR102078935B1 (en) * 2018-11-07 2020-02-19 주식회사 프로텍 Apparatus for Mounting Conductive Ball
KR102078936B1 (en) * 2018-11-07 2020-02-19 주식회사 프로텍 Method of Mounting Conductive Ball

Also Published As

Publication number Publication date
TWI780805B (en) 2022-10-11
WO2022010235A1 (en) 2022-01-13
KR20220005724A (en) 2022-01-14

Similar Documents

Publication Publication Date Title
EP3823030B1 (en) Method for manufacturing a micro-led display
US9786820B2 (en) Opto-electronic module and method for manufacturing the same
US6995469B2 (en) Semiconductor apparatus and fabricating method for the same
US5759873A (en) Method of manufacturing chip-size package-type semiconductor device
US7078819B2 (en) Microelectronic packages with elongated solder interconnections
US20050110161A1 (en) Method for mounting semiconductor chip and semiconductor chip-mounted board
US20160148965A1 (en) Detector assembly using vertical wire bonds and compression decals
US5861323A (en) Process for manufacturing metal ball electrodes for a semiconductor device
KR20080044326A (en) Semiconductor device and method for manufacturing same
US20080203138A1 (en) Method of mounting an electronic component and mounting apparatus
TWI757209B (en) Method of bonding copper pillar to pcb using mask
US7900807B2 (en) Conductive ball mounting apparatus and conductive ball mounting method
JP2004006465A (en) Method for manufacturing semiconductor device
TWI780805B (en) Method of bonding copper pillar to pcb by pressurizing copper pillar
JP2010177604A (en) Semiconductor manufacturing method and manufacturing device
JP2007281116A (en) Method of manufacturing semiconductor device
JP2003318218A (en) Curved chip substrate and its manufacturing method, and bump formation device
CN112447657A (en) Semiconductor device and method for manufacturing semiconductor device
KR101909109B1 (en) Method of stacking substrates for semiconductor device
JPH09326535A (en) Optical semiconductor device and manufacture thereof
CN111872511B (en) Tin ball implanting device and tin ball welding device
JP2000022031A (en) Mounting method of conductive ball
JP2008008620A (en) Method and device for inspecting semiconductor device
JPH07226420A (en) Manufacture of semiconductor device
JP2001135660A (en) Method and apparatus for ball transfer

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent