TW202206227A - Liquid supply device and polishing device - Google Patents

Liquid supply device and polishing device Download PDF

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Publication number
TW202206227A
TW202206227A TW110124457A TW110124457A TW202206227A TW 202206227 A TW202206227 A TW 202206227A TW 110124457 A TW110124457 A TW 110124457A TW 110124457 A TW110124457 A TW 110124457A TW 202206227 A TW202206227 A TW 202206227A
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Taiwan
Prior art keywords
slurry
polishing
protective cover
nozzle
grinding
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TW110124457A
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Chinese (zh)
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山口都章
磯部壮一
新海健史
吉成大
田村元成
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日商荏原製作所股份有限公司
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Publication of TW202206227A publication Critical patent/TW202206227A/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/06Dust extraction equipment on grinding or polishing machines
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

This liquid supply device comprises: a rocking arm that can horizontally rock the upper side of a polishing table; a slurry tube that extends in the longitudinal direction of the rocking arm and discharges slurry onto the polishing table from a slurry discharge port at a tip section thereof; and a plurality of spray nozzles which are provided to be aligned in the longitudinal direction of the rocking arm and spray a cleaning fluid onto the polishing table. The spray nozzles positioned at the tip section of the rocking arm are provided obliquely so as to be capable of cleaning a drop position of slurry onto the polishing table, the slurry being discharged from the slurry discharge nozzles.

Description

液體供給裝置及研磨裝置Liquid supply device and grinding device

本揭示係關於一種液體供給裝置及研磨裝置。The present disclosure relates to a liquid supply device and a polishing device.

近年來,隨著半導體元件之高積體化的進展,電路配線不斷微細化,配線間距離亦更狹窄。半導體元件的製造係將許多種類之材料反覆膜狀地形成於矽晶圓上而形成積層構造。為了形成該積層構造,將晶圓表面形成平坦之技術很重要。將此種晶圓表面平坦化之一種機構係廣泛使用進行化學機械研磨(CMP)的研磨裝置。In recent years, with the progress of high integration of semiconductor elements, circuit wiring has been miniaturized, and the distance between wirings has also been narrowed. In the manufacture of semiconductor devices, many kinds of materials are repeatedly formed on a silicon wafer to form a laminated structure. In order to form this laminated structure, a technique for flattening the wafer surface is important. As one mechanism for planarizing such a wafer surface, a polishing apparatus that performs chemical mechanical polishing (CMP) is widely used.

化學機械研磨(CMP)裝置一般而言具備:安裝有研磨墊之研磨台;保持晶圓之上方環形轉盤(研磨頭);及將研磨液(漿液)供給至研磨墊上之漿液吐出噴嘴。從漿液吐出噴嘴供給研磨液至研磨墊上,而且藉由上方環形轉盤將晶圓按壓於研磨墊,進一步藉由使上方環形轉盤與研磨台相對移動來研磨晶圓,而將其表面形成平坦。A chemical mechanical polishing (CMP) apparatus generally includes: a polishing table on which a polishing pad is installed; an annular turntable (polishing head) holding a wafer above; and a slurry discharge nozzle for supplying polishing liquid (slurry) onto the polishing pad. The polishing liquid is supplied from the slurry discharge nozzle to the polishing pad, and the wafer is pressed against the polishing pad by the upper annular turntable, and the wafer is polished by moving the upper annular turntable and the polishing table relatively to make the surface flat.

進行晶圓之研磨後,研磨屑及研磨液中所含之研磨粒等的微粒子會殘留於研磨墊上。因此,在研磨晶圓後,係從具有朝向研磨墊噴射液體或氣體與液體之混合流體的至少1個之噴射噴嘴的霧化器,將霧狀之清洗流體(液體、或液體與氣體之混合)噴霧於研磨墊上,來除去研磨墊上之異物。After the wafer is polished, fine particles such as polishing dust and abrasive grains contained in the polishing liquid remain on the polishing pad. Therefore, after polishing the wafer, a mist-like cleaning fluid (liquid, or a mixture of liquid and gas) is sprayed from an atomizer having at least one spray nozzle that sprays liquid or a mixture of gas and liquid toward the polishing pad. ) spray on the polishing pad to remove foreign matter on the polishing pad.

過去之CMP裝置為了避免設於搖動臂前端部之漿液吐出噴嘴與配置於研磨墊上之霧化器發生干擾,需要將漿液吐出噴嘴配置於比霧化器高的高度位置。因而,使搖動臂搖動而且從漿液吐出噴嘴吐出漿液時,漿液之滴下位置容易發生位置偏差,要將研磨晶圓所需之漿液在最佳時機與位置滴下很困難。In order to avoid interference between the slurry discharge nozzle provided at the tip of the rocker arm and the atomizer arranged on the polishing pad in the conventional CMP apparatus, it was necessary to arrange the slurry discharge nozzle at a height higher than the atomizer. Therefore, when the rocker arm is swung and the slurry is discharged from the slurry discharge nozzle, the position where the slurry is dropped tends to be misaligned, and it is difficult to drop the slurry required for polishing the wafer at the optimum timing and position.

日本特開2018-6549號公報揭示有搖動臂可在水平方向延伸之水平軸周圍旋轉而構成,使漿液吐出噴嘴在將液滴下位置與退開位置之間移動時,藉由使搖動臂在水平軸周圍旋轉,而使漿液吐出噴嘴從霧化器退到上方的技術。Japanese Patent Application Laid-Open No. 2018-6549 discloses that the swing arm is rotatable around a horizontal axis extending in the horizontal direction. A technique in which the shaft rotates around, and the slurry discharge nozzle is retracted from the atomizer to the top.

(發明所欲解決之問題)(The problem that the invention intends to solve)

希望提供一種可降低研磨晶圓所需之漿液的滴下位置之位置偏差的液體供給裝置及研磨裝置。 (解決問題之手段)It is desired to provide a liquid supply device and a polishing device that can reduce the positional deviation of the drop position of the slurry required for polishing a wafer. (means to solve the problem)

本揭示一個樣態之液體供給裝置具備: 搖動臂,其係可在研磨台之上方水平地搖動; 漿液管,其係沿著前述搖動臂之長度方向而延伸,並從前端部之漿液吐出口吐出漿液至前述研磨台上;及 複數個噴射噴嘴,其係沿著前述搖動臂之長度方向並列設置,並在前述研磨台上噴射清洗流體; 前述漿液吐出口定位於前述搖動臂之前端部, 位於前述搖動臂之前端部的噴射噴嘴係以可清洗從前述漿液吐出口吐出之漿液在前述研磨台上的滴下位置之方式而傾斜設置。 本揭示一個樣態之研磨裝置,係具備液體供給裝置, 前述液體供給裝置具備: 搖動臂,其係可在研磨台之上方水平地搖動; 漿液管,其係沿著前述搖動臂之長度方向而延伸,並從前端部之漿液吐出口吐出漿液至前述研磨台上;及 複數個噴射噴嘴,其係沿著前述搖動臂之長度方向並列設置,並在前述研磨台上噴射清洗流體; 前述漿液吐出口定位於前述搖動臂之前端部, 位於前述搖動臂之前端部的噴射噴嘴係以可清洗從前述漿液吐出口吐出之漿液在前述研磨台上的滴下位置之方式而傾斜設置。The liquid supply device of one aspect of the present disclosure includes: A rocking arm, which can be rocked horizontally above the grinding table; A slurry pipe, which extends along the longitudinal direction of the rocking arm, and discharges the slurry from the slurry outlet at the front end to the grinding table; and a plurality of spray nozzles, which are arranged in parallel along the length direction of the rocking arm, and spray cleaning fluid on the grinding table; The slurry outlet is positioned at the front end of the rocking arm, The spray nozzles located at the front end of the swing arm are inclined so as to clean the drop position of the slurry discharged from the slurry discharge port on the grinding table. In one aspect of the present disclosure, a polishing device is provided with a liquid supply device, The aforementioned liquid supply device includes: A rocking arm, which can be rocked horizontally above the grinding table; A slurry pipe, which extends along the longitudinal direction of the rocking arm, and discharges the slurry from the slurry outlet at the front end to the grinding table; and a plurality of spray nozzles, which are arranged in parallel along the length direction of the rocking arm, and spray cleaning fluid on the grinding table; The slurry outlet is positioned at the front end of the rocking arm, The spray nozzles located at the front end of the swing arm are inclined so as to clean the drop position of the slurry discharged from the slurry discharge port on the grinding table.

實施形態之第一樣態的液體供給裝置具備: 搖動臂,其係可在研磨台之上方水平地搖動; 漿液管,其係沿著前述搖動臂之長度方向而延伸,並從前端部之漿液吐出口吐出漿液至前述研磨台上;及 複數個噴射噴嘴,其係沿著前述搖動臂之長度方向並列設置,並在前述研磨台上噴射清洗流體; 前述漿液吐出口定位於前述搖動臂之前端部, 位於前述搖動臂之前端部的噴射噴嘴係以可清洗從前述漿液吐出口吐出之漿液在前述研磨台上的滴下位置之方式而傾斜設置。The liquid supply device in the first state of the embodiment includes: A rocking arm, which can be rocked horizontally above the grinding table; A slurry pipe, which extends along the longitudinal direction of the rocking arm, and discharges the slurry from the slurry outlet at the front end to the grinding table; and a plurality of spray nozzles, which are arranged in parallel along the length direction of the rocking arm, and spray cleaning fluid on the grinding table; The slurry outlet is positioned at the front end of the rocking arm, The spray nozzles located at the front end of the swing arm are inclined so as to clean the drop position of the slurry discharged from the slurry discharge port on the grinding table.

採用此種樣態時,因為將漿液吐出口與噴射噴嘴配置於同一個搖動臂上,所以,即使降低漿液吐出口之高度位置,漿液吐出口仍不致與噴射噴嘴發生干擾。因此,可降低漿液吐出口之高度位置,藉此,縮短漿液從漿液吐出口吐出而到達研磨台上之距離及時間,使搖動臂搖動而且從漿液吐出口吐出漿液時,漿液之滴下位置不易發生位置偏差,而可在最佳時機與位置滴下研磨晶圓所需之漿液。此外,因為位於搖動臂前端部之噴射噴嘴係以可清洗從漿液吐出口吐出之漿液在研磨台上的滴下位置之方式而傾斜設置,所以,即使例如漿液從漿液吐出口而滴下研磨台的中心附近時,仍可在研磨台之中心附近噴射清洗流體來清洗,可降低殘留於研磨台上的微粒子。此外,藉由將噴射噴嘴與漿液吐出口配置於同一個搖動臂上,可謀求研磨裝置中之節省空間化。In this configuration, since the slurry discharge port and the spray nozzle are arranged on the same swing arm, even if the height of the slurry discharge port is lowered, the slurry discharge port will not interfere with the spray nozzle. Therefore, the height position of the slurry discharge port can be lowered, thereby shortening the distance and time for the slurry discharged from the slurry discharge port to reach the grinding table, and when the rocker arm is swayed and the slurry is discharged from the slurry discharge port, the drop position of the slurry is less likely to occur. The position deviation can be dropped, and the slurry required for polishing the wafer can be dropped at the best timing and position. In addition, since the spray nozzle at the tip of the swing arm is inclined so as to clean the drop position of the slurry discharged from the slurry discharge port on the grinding table, even if the slurry is dropped from the slurry discharge port to the center of the grinding table, for example, When it is near the center of the grinding table, the cleaning fluid can still be sprayed near the center of the grinding table, which can reduce the particles remaining on the grinding table. In addition, by arranging the jet nozzle and the slurry discharge port on the same swing arm, space saving in the polishing apparatus can be achieved.

實施形態之第二樣態的液體供給裝置如第一樣態之液體供給裝置, 其中前述漿液管之周圍係藉由用於防止在前述研磨台上濺起之液體侵入管與管之間而滯留的護蓋來覆蓋。The liquid supply device of the second aspect of the embodiment is the same as the liquid supply device of the first aspect, The periphery of the slurry pipe is covered by a cover for preventing the liquid splashed on the grinding table from invading between the pipes and staying there.

將漿液吐出口與噴射噴嘴配置於同一個搖動臂上時,不僅從漿液吐出口吐出而在研磨台上濺起的漿液,就連從噴射噴嘴噴霧而在研磨台上濺起的清洗流體也容易侵入漿液管與管之間而滯留,不過採用此種樣態時,因為漿液供給管之周圍藉由護蓋而覆蓋,所以可防止在研磨台上濺起之液體侵入管與管之間而滯留。When the slurry discharge port and the jet nozzle are arranged on the same swing arm, not only the slurry discharged from the slurry discharge port and splashed on the grinding table, but also the cleaning fluid sprayed from the jet nozzle and splashed on the grinding table can be easily It penetrates between the slurry tubes and stays there. However, in this state, since the slurry supply tube is covered with a cover, the liquid splashed on the grinding table can be prevented from invading between the tubes and staying between the tubes. .

實施形態之第三樣態的液體供給裝置如第二樣態之液體供給裝置, 其中前述護蓋具有與前述研磨台相對之下面,前述漿液管之前端部向下貫穿該下面而伸出該護蓋的外側。The liquid supply device of the third aspect of the embodiment is like the liquid supply device of the second aspect, The aforementioned protective cover has a lower surface opposite to the aforementioned grinding table, and the front end of the aforementioned slurry pipe penetrates downwardly through the lower surface and protrudes out of the outer side of the protective cover.

採用此種樣態時,漿液管之前端部周圍進一步無間隙地被護蓋,可更確實防止在研磨台上濺起之液體侵入管與管之間而滯留。In this state, the periphery of the front end of the slurry tube is further covered without a gap, so that the liquid splashed on the grinding table can be more reliably prevented from intruding between the tubes and staying there.

實施形態之第四樣態的液體供給裝置如第二或第三樣態之液體供給裝置, 其中在前述搖動臂之基端部設有護蓋清洗噴嘴,其係在前述護蓋上供給清洗液。The liquid supply device of the fourth aspect of the embodiment, such as the liquid supply device of the second or third aspect, The base end of the rocking arm is provided with a cover cleaning nozzle, which is connected to the cover to supply cleaning liquid.

採用此種樣態時,藉由從護蓋清洗噴嘴在護蓋上供給清洗液,可清洗護蓋。藉此,於晶圓研磨中,可防止附著於護蓋之微粒子落在研磨台上而污染晶圓。In this state, the cover can be cleaned by supplying the cleaning liquid to the cover from the cover cleaning nozzle. In this way, during wafer polishing, the particles adhering to the protective cover can be prevented from falling on the polishing table and contaminating the wafer.

實施形態之第五樣態的液體供給裝置如第四樣態之液體供給裝置, 其中前述護蓋清洗噴嘴具有:第一噴嘴,其係在前述護蓋之上面供給清洗液;第二噴嘴,其係在前述護蓋之右側面供給清洗液;及第三噴嘴,其係在前述護蓋之左側面供給清洗液。The liquid supply device of the fifth aspect of the embodiment is like the liquid supply device of the fourth aspect, The protective cover cleaning nozzle has: a first nozzle, which is connected to the upper surface of the protective cover to supply cleaning liquid; a second nozzle, which is connected to the right side of the protective cover to supply cleaning liquid; and a third nozzle, which is connected to the above-mentioned protective cover. The left side of the cover is supplied with cleaning fluid.

採用此種樣態時,因為可分別在護蓋之上面、右側面與左側面供給清洗液來清洗,所以即使在護蓋之上面、右側面、左側面附著的微粒子量及附著方式不同,仍可提高護蓋之清洗效率。In this state, since the cleaning solution can be supplied to the upper surface, right side and left side of the protective cover respectively for cleaning, even if the amount of particles adhering to the upper surface, the right side and the left side of the protective cover and the method of adhering are different, the It can improve the cleaning efficiency of the protective cover.

實施形態之第六樣態的液體供給裝置如第二至第五樣態中任何一個樣態之液體供給裝置, 其中在前述護蓋之內面,以朝向沿著前述搖動臂之表面爬行的前述漿液管而伸出之方式設有複數個肋。The liquid supply device of the sixth aspect of the embodiment is the liquid supply device of any one of the second to fifth aspects, A plurality of ribs are provided on the inner surface of the protective cover so as to protrude toward the slurry tube crawling along the surface of the rocking arm.

採用此種樣態時,在搖動臂上安裝護蓋時,因為設於護蓋內面之肋將漿液管壓至搖動臂側,所以可抑制、防止藉由對漿液管施加壓力,管浮起而與不接觸之護蓋內壁干擾,或是管上產生抖動、振盪的問題。藉此,不僅防止漿液管與護蓋內壁摩擦,還可抑制藉由漿液管浮起導致從漿液吐出口吐出之漿液脈動,漿液之滴下位置不穩定。此外,從搖動臂上拆卸護蓋時,因為解除藉由設於護蓋內面之肋壓住漿液管,所以與將漿液管在導管(Pipe)等中通過時比較,可輕易進行漿液管的更換作業。藉由形成使漿液管在搖動臂表面爬行,並護蓋其上而壓住搖動臂的構造,而分別組合漿液管與噴射噴嘴,可分別進行更換。再者,即使漿液管係複數條時,管更換及分開使用(不同種類之漿液及純水)的設定作業仍然容易。In this state, when the cover is attached to the rocker arm, the rib provided on the inner surface of the cover presses the slurry pipe to the side of the rocker arm, so that the pressure is applied to the slurry pipe and the pipe can be suppressed and prevented from floating. And the interference with the inner wall of the protective cover that is not in contact, or the problem of jitter and oscillation on the tube. Thereby, not only the friction between the slurry tube and the inner wall of the protective cover is prevented, but also the pulsation of the slurry discharged from the slurry discharge port due to the floating of the slurry tube can be suppressed, and the drop position of the slurry can be prevented from being unstable. In addition, when removing the cover from the rocker arm, since the pressure of the slurry pipe by the ribs provided on the inner surface of the cover is released, the slurry pipe can be easily removed compared to when the slurry pipe is passed through a pipe or the like. Replace the job. By forming a structure in which the slurry pipe crawls on the surface of the rocker arm and covers it to press the rocker arm, the slurry pipe and the spray nozzle can be combined and replaced separately. Furthermore, even when there are multiple slurry pipes, the pipe replacement and setting work for separate use (different types of slurries and pure water) are still easy.

實施形態之第七樣態的液體供給裝置如第一至第六樣態中任何一個樣態之液體供給裝置, 其中在前述搖動臂中,前述漿液吐出口配置於比前述噴射噴嘴靠近研磨對象物之側。亦即,漿液吐出口並未位於噴射噴嘴之並列的延長(比噴射噴嘴之並列延長,而位於偏向研磨對象物側)。又換言之,漿液吐出口係位於其位於搖動臂前端部的噴射噴嘴與研磨對象物之間。The liquid supply device of the seventh aspect of the embodiment is the liquid supply device of any one of the first to sixth aspects, In the above-mentioned swing arm, the above-mentioned slurry discharge port is arranged on the side closer to the grinding object than the above-mentioned jet nozzle. That is, the slurry discharge port is not located in an extension of the juxtaposition of the jet nozzles (is longer than the juxtaposition of the jet nozzles, and is located on the side of the polishing object). In other words, the slurry discharge port is located between the jet nozzle located at the tip of the swing arm and the object to be polished.

採用此種樣態時,可在更靠近研磨對象物之位置吐出漿液,可在更最佳時機與位置滴下研磨晶圓所需之漿液。In this state, the slurry can be ejected at a position closer to the object to be polished, and the slurry required for polishing the wafer can be dropped at a more optimal timing and position.

實施形態之第八樣態的液體供給裝置如第一至第七樣態中任何一個樣態之液體供給裝置, 其中前述搖動臂之驅動機構係由伺服馬達與減速機而構成。The liquid supply device of the eighth aspect of the embodiment is the liquid supply device of any one of the first to seventh aspects, The drive mechanism of the rocking arm is composed of a servo motor and a reducer.

實施形態之第九樣態的研磨裝置具備第一至第八樣態中任何一個樣態之液體供給裝置。The polishing apparatus of the ninth aspect of the embodiment includes the liquid supply device of any one of the first to eighth aspects.

以下,參照圖式說明實施形態之具體例。另外,以下之說明及以下說明使用之圖式,就可相同構成之部分使用相同符號,並且省略重複之說明。Hereinafter, a specific example of the embodiment will be described with reference to the drawings. In addition, in the following description and the drawings used for the following description, the same reference numerals may be used for the parts having the same configuration, and overlapping descriptions will be omitted.

圖1係顯示一種實施形態之研磨裝置10的概略構成俯視圖。FIG. 1 is a plan view showing a schematic configuration of a polishing apparatus 10 according to an embodiment.

如圖1所示,研磨裝置10具備:安裝有研磨墊(無圖示)之研磨台11;保持晶圓W且用於將晶圓W按壓於研磨台11上之研磨墊而且進行研磨的上方環形轉盤(研磨頭)12;用於進行研磨墊之修整的修整器13;及液體供給裝置20。As shown in FIG. 1 , the polishing apparatus 10 includes: a polishing table 11 on which a polishing pad (not shown) is mounted; An annular turntable (grinding head) 12 ; a dresser 13 for dressing the polishing pad; and a liquid supply device 20 .

其中,上方環形轉盤12支撐於上方環形轉盤頭14。在研磨台11之上面貼合有研磨墊(無圖示),該研磨墊之上面構成研磨晶圓W之研磨面。另外,亦可使用固定磨石來取代研磨墊。上方環形轉盤12及研磨台11係構成可在各個軸心周圍旋轉。晶圓W藉由真空吸附而保持於上方環形轉盤12的下面。研磨時,從液體供給裝置20供給研磨液(漿液)至研磨墊的研磨面,研磨對象之晶圓W藉由上方環形轉盤12按壓於研磨面而被研磨。The upper annular turntable 12 is supported on the upper annular turntable head 14 . A polishing pad (not shown) is attached to the upper surface of the polishing table 11 , and the upper surface of the polishing pad constitutes a polishing surface for polishing the wafer W. In addition, a fixed grindstone can also be used in place of the polishing pad. The upper annular turntable 12 and the grinding table 11 are configured to be rotatable around each axis. The wafer W is held under the upper annular turntable 12 by vacuum suction. During polishing, a polishing liquid (slurry) is supplied from the liquid supply device 20 to the polishing surface of the polishing pad, and the wafer W to be polished is pressed against the polishing surface by the upper ring turntable 12 to be polished.

圖2係放大顯示液體供給裝置20之立體圖,圖3係液體供給裝置20之縱剖面圖。FIG. 2 is an enlarged perspective view showing the liquid supply device 20 , and FIG. 3 is a longitudinal cross-sectional view of the liquid supply device 20 .

如圖1至圖3所示,液體供給裝置20具有:可在研磨台11之上方水平搖動的搖動臂21;從前端部之漿液吐出口22在研磨台11上吐出漿液之1個或複數個(圖5所示之例係4個)漿液管27;及在研磨台11上噴射清洗流體(液體(例如純水及脫離子水)、或液體與氣體(例如氮氣等不活潑氣體)之混合)的複數個(圖示之例係8個)噴射噴嘴231~238。As shown in FIGS. 1 to 3 , the liquid supply device 20 includes: a swing arm 21 that can be horizontally swung above the grinding table 11 ; one or more than one or more of the slurry discharge port 22 at the front end part discharges the slurry on the grinding table 11 (The example shown in FIG. 5 is four) slurry pipes 27; and spray cleaning fluid (liquid (such as pure water and deionized water), or a mixture of liquid and gas (such as inert gas such as nitrogen) on the grinding table 11 ) (the example in the figure is eight) spray nozzles 231 to 238 .

搖動臂21係以在研磨台11之上方水平延伸的方式而配置,在搖動臂21之基端部設有搖動手段26。搖動手段26具有:在鉛直方向延伸之搖動軸261;及設於搖動軸261之下端部的驅動機構262(例如伺服馬達及減速機)。搖動臂21之基端部固定於搖動軸261。搖動軸261利用從驅動機構262接受之動力可在鉛直之中心軸線周圍轉動,藉此搖動臂21在研磨台11之上方以搖動軸261為中心而水平搖動(回轉)。驅動機構262由伺服馬達與減速機構成時,由於伺服機構中可控制位置、速度等,因此搖動臂21之位置精度高且穩定化。因而,可利用晶圓之研磨量測量值實施反饋控制,並可依據所測量之研磨量,在需要研磨之位置以需要的漿液量精確滴下漿液。此時,利用晶圓之研磨量測量值實施的反饋控制,例如可利用依據本案申請人於日本特開2015-193068提出之渦電流式或光學式的膜厚感測器之測量值實施的研磨頭之壓力控制,並以附帶於其研磨頭之壓力控制,而將漿液供給至提高研磨頭之壓力的部分之方式進行搖動臂21的位置控制。伺服馬達用於精確定位,減速機用於增大轉矩。例如使用1/100之減速機時,因為馬達旋轉1周之移動量變成1/100,所以可使其進行更細微之動作。此時,亦可使用無齒隙之精密減速機。如後述,使漿液噴嘴與霧化器一體化之構造物的重量旋轉時需要大電容之馬達,不過,因為有減速機時可增大轉矩,所以可以小電容之馬達來驅動。The swing arm 21 is arranged so as to extend horizontally above the polishing table 11 , and a swing means 26 is provided at the proximal end of the swing arm 21 . The swing means 26 includes a swing shaft 261 extending in the vertical direction, and a drive mechanism 262 (eg, a servo motor and a reduction gear) provided at the lower end of the swing shaft 261 . The base end of the rocking arm 21 is fixed to the rocking shaft 261 . The rocking shaft 261 is rotatable around the vertical center axis by the power received from the drive mechanism 262 , whereby the rocking arm 21 is horizontally rocked (rotated) above the grinding table 11 about the rocking shaft 261 . When the drive mechanism 262 is composed of a servo motor and a reduction gear, since the position, speed, etc. can be controlled in the servo mechanism, the positional accuracy of the swing arm 21 is high and stable. Therefore, feedback control can be implemented by using the measured value of the polishing amount of the wafer, and according to the measured polishing amount, the slurry can be accurately dropped with the required amount of slurry at the position to be polished. At this time, the feedback control using the measurement value of the polishing amount of the wafer can be implemented, for example, using the measurement value of the eddy current type or optical type film thickness sensor proposed by the applicant of the present application in Japanese Patent Laid-Open No. 2015-193068. The pressure control of the grinding head is performed, and the position control of the swing arm 21 is carried out so that the slurry is supplied to the part where the pressure of the grinding head is increased in addition to the pressure control of the grinding head. Servo motors are used for precise positioning and reducers are used to increase torque. For example, when using a 1/100 speed reducer, since the movement of the motor per revolution becomes 1/100, it can be used for finer movements. At this time, a precision reducer without backlash can also be used. As will be described later, a motor with a large capacitance is required to rotate the weight of the structure that integrates the slurry nozzle and the atomizer. However, since the torque can be increased with a reducer, it can be driven by a motor with a small capacitance.

此外,驅動機構262由伺服馬達與減速機構成情況下,藉由測量來自噴射噴嘴231~238之清洗液噴射時的反作用力作為伺服馬達負荷,可反饋噴射噴嘴231~238之吐出流量,不使用流量計而可控制流量。流量控制例如藉由調整圖3所示之控制閥23c(例如電動流量調整閥等)的開度來進行。因而,搖動臂21之每個移動角度(噴射噴嘴231~238之位置)可控制噴射噴嘴231~238之吐出流量,換言之亦可控制墊清洗位置與流量。此外,過去因為漿液吐出口22與噴射噴嘴231~238係在不同的手臂,且漿液管27本身之剛性低,所以無法進行適切之位置控制,而本實施形態因為將漿液吐出口22與噴射噴嘴231~238配置於同一個搖動臂21上,且搖動臂21之剛性比漿液管27高,所以,藉由利用伺服馬達可控制漿液及清洗液之吐出(噴射)開始位置、結束位置。In addition, when the drive mechanism 262 is composed of a servo motor and a speed reducer, by measuring the reaction force of the cleaning liquid from the spray nozzles 231 to 238 as the load of the servo motor, the discharge flow rate of the spray nozzles 231 to 238 can be fed back, which is not used. flow meter to control the flow. The flow rate control is performed by, for example, adjusting the opening degree of the control valve 23c shown in FIG. 3 (for example, an electric flow control valve or the like). Therefore, each moving angle of the rocking arm 21 (position of the spray nozzles 231 to 238 ) can control the discharge flow rate of the spray nozzles 231 to 238 , in other words, the pad cleaning position and flow rate can be controlled. In addition, in the past, since the slurry discharge port 22 and the jet nozzles 231 to 238 were attached to different arms, and the rigidity of the slurry pipe 27 itself was low, proper position control could not be performed, but in this embodiment, the slurry discharge port 22 and the jet nozzles 231 to 238 are arranged on the same swing arm 21, and the rigidity of the swing arm 21 is higher than that of the slurry pipe 27, so the start position and end position of the discharge (spray) of the slurry and cleaning liquid can be controlled by using a servo motor.

如圖1至圖3所示,漿液吐出口22定位於搖動臂21的前端部,複數個噴射噴嘴231~238沿著搖動臂21之長度方向而並列設置。此處所謂搖動臂21之前端部,只要是手臂的前端部即可,亦可係手臂之軸線的前端及其兩側面的其中一個。圖2、3之漿液吐出口22於手臂之前端部中,在面對研磨對象物的側面。各噴射噴嘴231~238配置於形成在搖動臂21底面的凹部內。各噴射噴嘴231~238具有縫隙狀之流體出口,並將清洗流體形成霧狀,而將該霧狀之清洗流體噴霧於研磨台11上。As shown in FIGS. 1 to 3 , the slurry discharge port 22 is positioned at the front end of the swing arm 21 , and a plurality of spray nozzles 231 to 238 are arranged in parallel along the longitudinal direction of the swing arm 21 . The front end portion of the swing arm 21 here may be the front end portion of the arm, and it may be the front end of the axis of the arm and one of the two side surfaces thereof. The slurry discharge port 22 of FIGS. 2 and 3 is on the side facing the object to be polished in the front end of the arm. Each of the injection nozzles 231 to 238 is arranged in a concave portion formed on the bottom surface of the swing arm 21 . Each of the spray nozzles 231 to 238 has a slit-shaped fluid outlet, forms a mist of the cleaning fluid, and sprays the mist-like cleaning fluid on the polishing table 11 .

如圖3所示,在搖動臂21之內部形成有液體流路23a,各噴射噴嘴231~238連通於液體流路23a。在液體流路23a之端部形成有液體供給入口23b。從液體供給入口23b供給之液體(例如純水)通過液體流路23a而供給至各噴射噴嘴231~238。藉由從各噴射噴嘴231~238噴射清洗流體,可清洗整個研磨台11。另外,圖3所示之例係1條液體流路23a分歧成複數條(此處係8條)噴射噴嘴231~238,不過並非限定於此者,亦可係複數條(此處係8條)之各個配管直接連接於各個不同的噴射噴嘴231~238,或是將幾個噴射噴嘴群組化而連接於各群組。此外,亦可各條或一條分歧,並以可調整個別噴嘴吐出之開啟(ON)或關閉(OFF)的方式,而在各噴射噴嘴231~238中設有閥門。此外,已說明液體流路23a並非只有1條,亦可有複數條,不過液體供給入口23b亦不限於圖3所示之位置,亦可在搖動臂21a或是搖動軸261,亦可通過搖動軸261內部,或是沿著其外部爬行。再者,亦可係對應於各噴射噴嘴或是群組化之幾個噴射噴嘴的組合之複數個。As shown in FIG. 3, the liquid flow path 23a is formed in the rocker arm 21, and each injection nozzle 231-238 communicates with the liquid flow path 23a. A liquid supply inlet 23b is formed at the end of the liquid flow path 23a. The liquid (for example, pure water) supplied from the liquid supply inlet 23b is supplied to each of the spray nozzles 231 to 238 through the liquid flow path 23a. By spraying the cleaning fluid from each of the spray nozzles 231 to 238, the entire polishing table 11 can be cleaned. In addition, the example shown in FIG. 3 is that one liquid flow path 23a is branched into a plurality of (here, eight) spray nozzles 231 to 238, but it is not limited to this, and a plurality of (here, eight) spray nozzles may be used. ) are directly connected to different spray nozzles 231 to 238, or several spray nozzles are grouped and connected to each group. In addition, each or one of the nozzles can be branched, and each nozzle 231-238 is provided with a valve in such a way that the opening (ON) or the closing (OFF) of the discharge of the individual nozzles can be adjusted. In addition, it has been explained that there is not only one liquid flow path 23a, but also a plurality of liquid flow paths 23a. However, the liquid supply inlet 23b is not limited to the position shown in FIG. Inside the shaft 261, or crawl along its outside. Furthermore, it may correspond to each spray nozzle or a plurality of combinations of several spray nozzles grouped together.

此外,如圖3所示,複數個漿液管27沿著搖動臂21之長度方向而在搖動臂21的表面爬行,各漿液管27前端部之漿液吐出口22定位於搖動臂21的前端部。並從各個不同之漿液吐出口22吐出在各漿液管27中流動的液體(漿液或純水)。漿液管27之前端部(出口附近)藉由漿液管固定配件而固定於搖動臂21本體。藉由將漿液管27之前端部(出口附近)固定於剛性高的霧化器本體,可抑制漿液管27前端之漿液吐出口22偏差。此外,漿液管27之前端部藉由漿液管固定配件而固定,藉此可調整管前端之高度位置,再者,可從每條管之管前端的台面改變高度而保持住。此外,容易取代管之種類(考慮至材質、口徑的差異)及數量(目前記載為複數條(4條))。此外,漿液管27不限於搖動臂21之上面及側面,藉由沿著手臂表面爬行,且漿液管27之前端部藉由漿液管固定配件而固定於搖動臂21本體,容易變更平視觀看時之漿液吐出口22的位置關係。3, a plurality of slurry pipes 27 crawl on the surface of the swing arm 21 along the longitudinal direction of the swing arm 21. The liquid (slurry or pure water) flowing in each of the slurry pipes 27 is discharged from each of the different slurry discharge ports 22 . The front end portion (near the outlet) of the slurry pipe 27 is fixed to the body of the swing arm 21 by a slurry pipe fixing fitting. By fixing the front end (near the outlet) of the slurry tube 27 to the nebulizer body with high rigidity, deviation of the slurry discharge port 22 at the front end of the slurry tube 27 can be suppressed. In addition, the front end of the slurry tube 27 is fixed by a slurry tube fixing fitting, whereby the height position of the front end of the tube can be adjusted, and the height of the front end of each tube can be changed and held. In addition, it is easy to replace the type of tube (considering the difference in material and diameter) and the number (currently recorded as plural (4)). In addition, the slurry tube 27 is not limited to the top and side surfaces of the rocking arm 21. By crawling along the surface of the arm, and the front end of the slurry tube 27 is fixed to the body of the rocking arm 21 by a slurry tube fixing fitting, it is easy to change the horizontal view. The positional relationship of the slurry discharge port 22.

此外,藉由漿液管27之前端部(出口附近)藉由漿液管固定配件而固定於搖動臂21本體,可使漿液管27前端部之漿液吐出口22位於更下方。此外,因為可將漿液吐出口22距離研磨台11之高度配合噴射噴嘴231~238的高度,所以可將研磨台11至漿液吐出口22的高度從以往約100mm而改成接近30mm的程度。再者,藉由在搖動軸261中設置空氣汽缸或電動致動器,可在垂直方向移動位置,並可配合用途調整研磨台11與漿液吐出口22間之距離。In addition, by fixing the front end (near the outlet) of the slurry tube 27 to the main body of the swing arm 21 by the slurry tube fixing fitting, the slurry discharge port 22 of the front end of the slurry tube 27 can be positioned further below. In addition, since the height of the slurry discharge port 22 from the grinding table 11 can be matched with the heights of the jet nozzles 231 to 238, the height from the grinding table 11 to the slurry discharge port 22 can be changed from about 100 mm in the past to approximately 30 mm. Furthermore, by arranging an air cylinder or an electric actuator in the rocking shaft 261, the position can be moved in the vertical direction, and the distance between the grinding table 11 and the slurry discharge port 22 can be adjusted according to the application.

漿液管27亦可沿著支撐搖動臂21之搖動軸261的外周面(爬行)而配置。藉此,可更換漿液管27。以護蓋24覆蓋搖動軸261情況下,亦可將沿著搖動軸261而配置之漿液管27配置於該護蓋24的內側。此外,停止從漿液吐出口22吐出漿液時,為了抑制空氣進入漿液管27內,漿液管27亦可沿著搖動軸261先向上延伸,然後向下彎曲並下降後,沿著搖動臂21(爬行)而橫向延伸來設定。The slurry pipe 27 may be arranged along the outer peripheral surface (crawl) of the swing shaft 261 that supports the swing arm 21 . Thereby, the slurry tube 27 can be replaced. When covering the swing shaft 261 with the protective cover 24 , the slurry pipe 27 arranged along the swing shaft 261 may be disposed inside the protective cover 24 . In addition, when the slurry discharge from the slurry discharge port 22 is stopped, in order to prevent the air from entering the slurry pipe 27, the slurry pipe 27 can also extend upward along the rocking shaft 261, then bend downward and descend, and then follow the rocking arm 21 (crawling). ) while extending horizontally.

藉由將漿液吐出口22與噴射噴嘴231~238配置於同一個搖動臂21上,即使降低漿液吐出口22之高度位置,漿液吐出口22仍不致與噴射噴嘴231~238干擾。因此,可降低漿液吐出口22之高度位置,藉此,縮短漿液從漿液吐出口22吐出後到達研磨台11上的距離及時間,使搖動臂21搖動而且使漿液從漿液吐出口22吐出時,漿液之滴下位置不易發生位置偏差,並可在最佳時機與位置滴下研磨晶圓所需之漿液。By arranging the slurry outlet 22 and the jet nozzles 231 to 238 on the same swing arm 21, even if the height of the slurry outlet 22 is lowered, the slurry outlet 22 does not interfere with the jet nozzles 231 to 238. Therefore, the height position of the slurry discharge port 22 can be lowered, thereby shortening the distance and time for the slurry to reach the polishing table 11 after being discharged from the slurry discharge port 22. The drop position of the slurry is not prone to position deviation, and the slurry required for polishing wafers can be dropped at the best timing and position.

如圖1所示,漿液吐出口22在搖動臂21中,係比噴射噴嘴231~238而配置於靠近研磨對象物(晶圓)W之側。亦即,漿液吐出口22並非位於噴射噴嘴231~238之並列的延長(而係位於比噴射噴嘴231~238之並列延長偏向研磨對象物(晶圓)W側)。又換言之,漿液吐出口22係位於其位於搖動臂21前端部之噴射噴嘴231與研磨對象物(晶圓)W之間。藉此,可在更接近研磨對象物(晶圓)W之位置吐出漿液,可在更最佳的時機與位置滴下研磨晶圓W所需之漿液。As shown in FIG. 1 , the slurry discharge port 22 is disposed closer to the object to be polished (wafer) W than the jet nozzles 231 to 238 in the swing arm 21 . That is, the slurry discharge port 22 is not located in the parallel extension of the jetting nozzles 231 to 238 (but is located on the side of the polishing object (wafer) W relative to the parallel extension of the jetting nozzles 231 to 238 ). In other words, the slurry discharge port 22 is located between the jet nozzle 231 located at the tip portion of the swing arm 21 and the object to be polished (wafer) W. As shown in FIG. Thereby, the slurry can be discharged at a position closer to the polishing object (wafer) W, and the slurry required for polishing the wafer W can be dropped at a more optimal timing and position.

圖4係從前端側觀看搖動臂21之前視圖。圖5係從斜下方觀看搖動臂21前端部之圖。FIG. 4 is a front view of the swing arm 21 viewed from the front end side. FIG. 5 is a view of the front end portion of the swing arm 21 viewed obliquely from below.

如圖4及圖5所示,位於搖動臂21前端部之噴射噴嘴231係以可清洗從漿液吐出口22吐出之漿液在研磨台11上的滴下位置之方式而傾斜設置。亦即,從搖動臂21之前端側觀看時,位於搖動臂21前端部之噴射噴嘴231係以其吐出方向之延長線對漿液吐出口22之吐出方向的延長線形成銳角之方式而傾斜設置。As shown in FIGS. 4 and 5 , the spray nozzles 231 at the front end of the swing arm 21 are inclined so as to clean the drop position of the slurry discharged from the slurry discharge port 22 on the polishing table 11 . That is, when viewed from the front end side of the rocker arm 21, the spray nozzles 231 located at the front end of the rocker arm 21 are inclined so that the extension line of the discharge direction forms an acute angle with the extension line of the discharge direction of the slurry discharge port 22.

參照圖1,例如,從漿液吐出口22在研磨台11之中心附近滴下漿液時,假設位於搖動臂21前端部之噴射噴嘴231垂直向下地設置時,有可能無法對殘留於研磨台11之中心附近的漿液充分噴射清洗流體來清洗。另外,容易殘留於中心附近之理由係因愈朝向研磨台之半徑方向中心,愈不易對漿液產生朝向研磨台外周之離心力。相對而言,本實施形態因為位於搖動臂21前端部之噴射噴嘴231係以可清洗從漿液吐出口22吐出之漿液的滴下位置之方式而傾斜設置,所以,即使從漿液吐出口22滴下漿液至研磨台11之中心附近時,仍可在研磨台11之中心附近充分噴射清洗流體來清洗,可減少殘留於研磨台11上之微粒子。噴射噴嘴231並非具有圓形之流體出口的噴嘴,而係具有縫隙狀之流體出口的噴霧噴嘴,關於研磨台11之中心應以接觸橫長之刷子的方式在研磨台11上滴下清洗液。此因,從圓形之漿液吐出口22滴下漿液時,研磨台11上之漿液描繪的圖形從滴下位置同心圓狀擴大,且藉由研磨台11之旋轉,其同心圓朝向旋轉方向外側而長圓形化。從圓形狀之流體出口滴下清洗液亦同。因此,圓形之漿液吐出口22與圓形狀的流體出口時,無論漿液吐出口22與圓形狀之流體出口怎麼靠近,漿液之擴大與清洗液的擴大,既然擴大中心彼此不同,重疊部分就會產生某種差異的部分。另外,噴射噴嘴231係具有縫隙狀之流體出口的噴射噴嘴時,既然噴霧之清洗液的形狀係刷子狀,即除去其該噴霧之清洗液淋到的部分之漿液。噴射噴嘴231係具有縫隙狀之流體出口的噴射噴嘴情況下,從上方觀看時,噴霧之清洗液的形狀應為不放在從研磨台11之中心至外周的半徑線上而若干傾斜。此時,隨著研磨台11旋轉,可輔助清洗液向外周流動,並可促進除去希望之漿液。1 , for example, when the slurry is dropped from the slurry discharge port 22 near the center of the grinding table 11, if the spray nozzle 231 located at the front end of the swing arm 21 is installed vertically downward, there is a possibility that the residual liquid in the center of the grinding table 11 cannot be removed. The nearby slurry is fully sprayed with cleaning fluid for cleaning. Moreover, the reason why it is easy to remain in the vicinity of the center is that the centrifugal force toward the outer periphery of the grinding table is less likely to be generated on the slurry toward the center in the radial direction of the grinding table. In contrast, in this embodiment, since the spray nozzle 231 located at the front end of the swing arm 21 is slanted so as to clean the drop position of the slurry discharged from the slurry discharge port 22, even if the slurry is dropped from the slurry discharge port 22 to When the center of the grinding table 11 is near the center of the grinding table 11 , the cleaning fluid can be sufficiently sprayed near the center of the grinding table 11 for cleaning, which can reduce the particles remaining on the grinding table 11 . The spray nozzle 231 is not a nozzle with a circular fluid outlet, but a spray nozzle with a slit-shaped fluid outlet, and the cleaning liquid should be dropped on the grinding table 11 in a manner of contacting the horizontally long brush with respect to the center of the grinding table 11 . Therefore, when the slurry is dropped from the circular slurry discharge port 22, the pattern drawn by the slurry on the grinding table 11 expands concentrically from the dropping position, and the concentric circles are elongated toward the outside in the rotation direction by the rotation of the grinding table 11. rounded. The same applies to dripping the cleaning solution from the circular fluid outlet. Therefore, in the case of the circular slurry outlet 22 and the circular fluid outlet, no matter how close the slurry outlet 22 and the circular fluid outlet are, the expansion of the slurry and the expansion of the cleaning solution, since the expansion centers are different from each other, the overlapping portion will be The part that makes some kind of difference. In addition, when the spray nozzle 231 is a spray nozzle having a slit-shaped fluid outlet, since the shape of the sprayed cleaning liquid is brush-like, the slurry of the part where the sprayed cleaning liquid showers is removed. When the spray nozzle 231 is a spray nozzle with a slit-shaped fluid outlet, when viewed from above, the shape of the sprayed cleaning liquid should not be placed on the radial line from the center of the grinding table 11 to the outer periphery, and should be slightly inclined. At this time, with the rotation of the polishing table 11, the flow of the cleaning liquid to the outer periphery can be assisted, and the removal of the desired slurry can be facilitated.

如圖2至圖5所示,漿液管27之周圍藉由用於防止在研磨台11上濺起之液體侵入管27與管27之間而滯留的護蓋24來覆蓋。As shown in FIGS. 2 to 5 , the periphery of the slurry pipe 27 is covered by a cover 24 for preventing the liquid splashed on the grinding table 11 from intruding into the space between the pipes 27 and staying there.

如本實施形態將漿液吐出口22與噴射噴嘴231~238配置於同一個搖動臂21上時,不僅從漿液吐出口22吐出而在研磨台11上濺起的漿液,就連從噴射噴嘴231~238噴霧而在研磨台11上濺起的清洗流體也容易侵入漿液供給管27與管27之間而滯留,不過,藉由護蓋24覆蓋漿液供給管27之周圍,可防止在研磨台11上濺起之液體侵入管27與管27之間而滯留。When the slurry discharge port 22 and the jetting nozzles 231 to 238 are arranged on the same swing arm 21 as in the present embodiment, the slurry that is not only discharged from the slurry jetting port 22 but splashed on the polishing table 11 is also discharged from the jetting nozzles 231 to 238 . The cleaning fluid splashed on the grinding table 11 by the spray of 238 is also likely to intrude between the slurry supply pipe 27 and the pipe 27 and stay there. The splashed liquid penetrates between the pipes 27 and stays there.

如圖5所示,護蓋24具有與研磨台11相對之下面24b,漿液管27之前端部向下貫穿該下面24b,並伸出於護蓋24的外側。藉此,漿液管27前端部之周圍更無間隙地被護蓋,可更確實防止在研磨台11上濺起之液體侵入管27與管27之間而滯留。As shown in FIG. 5 , the protective cover 24 has a lower surface 24 b opposite to the grinding table 11 , and the front end of the slurry pipe 27 penetrates downwardly through the lower surface 24 b and protrudes from the outer side of the protective cover 24 . Thereby, the periphery of the front end of the slurry pipe 27 is covered with no gaps, and the liquid splashed on the polishing table 11 can be more reliably prevented from entering between the pipes 27 and staying there.

如圖3所示,在護蓋24之內面,以朝向漿液供給管27而伸出之方式設有複數個(圖示之例係3個)肋24a。在搖動臂21上安裝護蓋24時,因為設於護蓋24內面之肋24a將漿液管27按壓於搖動臂21側,所以,可抑制、防止藉由對漿液管27施加壓力造成管27浮起,而與不接觸之護蓋24內壁干擾,或是管27上產生抖動、振盪的問題。藉此,不僅防止漿液管27與護蓋24內壁摩擦,還可抑制藉由漿液管27浮起導致從漿液吐出口22吐出之漿液脈動,漿液之滴下位置不穩定。As shown in FIG. 3 , a plurality of (three in the illustrated example) ribs 24a are provided on the inner surface of the protective cover 24 so as to protrude toward the slurry supply pipe 27 . When the cover 24 is attached to the rocker arm 21, the slurry pipe 27 is pressed against the rocker arm 21 by the ribs 24a provided on the inner surface of the cover 24, so that the pressure applied to the slurry pipe 27 can be suppressed and prevented from causing the pipe 27 It floats up and interferes with the inner wall of the protective cover 24 that is not in contact, or the tube 27 produces jitter and oscillation. This not only prevents the slurry tube 27 from rubbing against the inner wall of the protective cover 24, but also suppresses the pulsation of the slurry discharged from the slurry discharge port 22 due to the floating of the slurry tube 27, resulting in an unstable drop position of the slurry.

圖3所示之例的肋24a數量係3支,不過並非限於3支者,亦可係1~2支,亦可係4支以上。亦可護蓋24與肋24a係一體,亦可兩者分開。此外,一種修改例亦可將肋24a設於搖動臂21之本體,在搖動臂21上安裝護蓋24時,設於搖動臂21本體之肋24a將漿液管27按壓於護蓋24的內壁側,且沿著護蓋24的內壁。即使採用此種樣態,仍可獲得與將肋24a設於護蓋24內面之樣態同樣的作用效果。In the example shown in FIG. 3, the number of ribs 24a is three, but it is not limited to three, and one to two or four or more may be used. The cover 24 and the rib 24a can also be integrated, or they can be separated. In addition, in a modified example, the rib 24 a can also be provided on the body of the rocking arm 21 . When the protective cover 24 is installed on the rocking arm 21 , the rib 24 a provided on the body of the rocking arm 21 presses the slurry pipe 27 against the inner wall of the protective cover 24 . side and along the inner wall of the cover 24 . Even in this aspect, the same effect as the aspect in which the rib 24a is provided on the inner surface of the protective cover 24 can be obtained.

此外,從搖動臂21上拆卸護蓋24時,因為解除藉由設於護蓋24內面之肋24a壓住漿液管27,所以與將漿液管27在導管等中通過時比較,可輕易進行漿液管的更換作業。此外,藉由形成使漿液管27在搖動臂21表面爬行,並藉由護蓋24其上而壓住搖動臂21的構造,而分別組合漿液管27與噴射噴嘴231~238,可分別進行更換。再者,即使漿液管27係複數條時,管更換及分開使用(不同種類之漿液及純水)的設定作業仍然容易。In addition, when removing the cover 24 from the swing arm 21, since the pressing of the slurry pipe 27 by the ribs 24a provided on the inner surface of the cover 24 is released, it can be easily performed compared to when the slurry pipe 27 is passed through a conduit or the like. Replacing the slurry tube. In addition, by forming a structure in which the slurry pipe 27 crawls on the surface of the rocker arm 21 and the rocker arm 21 is pressed by the cover 24, the slurry pipe 27 and the spray nozzles 231 to 238 are combined and replaced respectively. . Furthermore, even when there are a plurality of slurry tubes 27, the replacement of the tubes and the setting work for separate use (different types of slurries and pure water) are still easy.

如圖2至圖4所示,在搖動臂21之基端部設有在護蓋24上供給清洗液(例如純水)的護蓋清洗噴嘴25。如圖2所示,護蓋清洗噴嘴25與形成於搖動臂21內部之液體流路23a連通。因此,從液體供給入口23b供給之液體(例如純水)通過液體流路23a而供給至各霧化器噴嘴231~238,並且亦供給至護蓋清洗噴嘴25。藉此,在研磨晶圓W後,從各霧化器噴嘴231~238將霧狀之清洗流體(液體、或液體與氣體的混合)噴霧至研磨台11上來清洗研磨台11時,可從護蓋清洗噴嘴25在護蓋24上供給清洗液,同時進行護蓋24之清洗。另外,亦可構成對護蓋清洗噴嘴25之供給配管與對噴射噴嘴231~238的供給配管係不同之供給配管,並控制各個的吐出,必要時可同時吐出。護蓋24之上面亦可半圓錐狀(剖面圓弧狀)的曲面形狀。護蓋清洗噴嘴25亦可係噴灑(Spray)噴嘴。As shown in FIGS. 2 to 4 , a cover cleaning nozzle 25 for supplying cleaning liquid (eg, pure water) to the cover 24 is provided at the base end portion of the swing arm 21 . As shown in FIG. 2 , the cover cleaning nozzle 25 communicates with a liquid flow path 23 a formed inside the swing arm 21 . Therefore, the liquid (for example, pure water) supplied from the liquid supply inlet 23 b is supplied to each of the atomizer nozzles 231 to 238 through the liquid flow path 23 a, and is also supplied to the cap cleaning nozzle 25 . Thereby, after polishing the wafer W, when the polishing table 11 is cleaned by spraying the mist-like cleaning fluid (liquid or a mixture of liquid and gas) from the atomizer nozzles 231 to 238 on the polishing table 11, it is possible to clean the polishing table 11 from the protection The cover cleaning nozzle 25 supplies cleaning liquid to the protective cover 24 and simultaneously cleans the protective cover 24 . In addition, the supply piping to the cap cleaning nozzle 25 and the supply piping to the jet nozzles 231 to 238 may be configured as separate supply piping, and the discharge of each may be controlled, and simultaneous discharge may be possible if necessary. The upper surface of the protective cover 24 may also have a semi-conical (cross-sectional arc shape) curved surface shape. The cover cleaning nozzle 25 can also be a spray nozzle.

本實施形態如圖2及圖4所示,護蓋清洗噴嘴25具有:在護蓋24之上面供給清洗液的第一噴嘴251;在護蓋24之右側面供給清洗液的第二噴嘴252;及在護蓋24之左側面供給清洗液的第三噴嘴253。藉此,可在護蓋24之上面、右側面與左側面分別供給清洗液來清洗,即使護蓋之上面、右側面與左側面所附著的微粒子量及附著方式不同,仍可提高護蓋24之清洗效率。第一~第三噴嘴251~253分別係噴灑噴嘴,亦可從第一~第三噴嘴251~253噴霧之清洗液(噴灑)的擴大可從護蓋24的基部覆蓋至前端部。另外,只要是可達成以清洗液從護蓋24之基部覆蓋至前端部的噴嘴即可,第一~第三噴嘴251~253並非限定於噴灑噴嘴者。第一~第三噴嘴251~253亦可分別對護蓋24之方向為可變。第一~第三噴嘴251~253係噴灑噴嘴情況下,第一~第三噴嘴251~253亦可在各個軸中心旋轉噴灑的方向。第一~第三噴嘴251~253之流量亦可彼此不同及/或可變。此時,可將希望流量之清洗液集中噴灑到護蓋24表面之附著物附著程度高的部分。In this embodiment, as shown in FIGS. 2 and 4 , the cover cleaning nozzle 25 includes: a first nozzle 251 for supplying cleaning liquid on the upper surface of the protective cover 24 ; a second nozzle 252 for supplying cleaning liquid on the right side of the protective cover 24 ; and a third nozzle 253 for supplying cleaning liquid on the left side surface of the protective cover 24 . In this way, cleaning liquid can be supplied to the upper surface, right side and left side of the protective cover 24 respectively for cleaning. Even if the amount and the adhesion method of the particles adhering to the upper surface, the right side and the left side of the protective cover are different, the protective cover 24 can still be improved. cleaning efficiency. The first to third nozzles 251 to 253 are spray nozzles, respectively, and the expansion of the cleaning liquid (spray) sprayed from the first to third nozzles 251 to 253 can cover from the base to the front end of the protective cover 24 . In addition, the first to third nozzles 251 to 253 are not limited to those of spray nozzles as long as they are nozzles capable of covering from the base to the front end of the protective cover 24 with the cleaning liquid. The directions of the first to third nozzles 251 to 253 to the protective cover 24 can also be changed, respectively. When the first to third nozzles 251 to 253 are spray nozzles, the first to third nozzles 251 to 253 may rotate in the direction of spraying at the center of each axis. The flow rates of the first to third nozzles 251 to 253 may also be different and/or variable from each other. At this time, the cleaning liquid with a desired flow rate can be concentratedly sprayed to the portion of the surface of the protective cover 24 where the attachment degree is high.

其次,說明如上述構成之研磨裝置10的動作之一例。Next, an example of the operation of the polishing apparatus 10 configured as described above will be described.

首先,在研磨晶圓W時,如圖1所示,在可從漿液吐出口22滴下漿液至研磨台11之中心附近的方式定位搖動臂21之狀態下,從漿液吐出口22吐出漿液至研磨台11上,並且藉由上方環形轉盤12將研磨對象之晶圓W按壓於研磨台11上來研磨。First, when polishing the wafer W, as shown in FIG. 1 , the swing arm 21 is positioned so that the slurry can be dropped from the slurry ejection port 22 to the vicinity of the center of the polishing table 11 , and the slurry is ejected from the slurry ejection port 22 until polishing. The wafer W to be ground is pressed on the grinding table 11 by the upper annular turntable 12 for grinding.

本實施形態因為漿液吐出口22與噴射噴嘴231~238係配置於同一個搖動臂21上,所以可降低漿液吐出口22之高度位置,藉此,縮短漿液從漿液吐出口22吐出而到達研磨台11上的距離及時間,使搖動臂21搖動而且使漿液從漿液吐出口22吐出時,漿液之滴下位置不易位置偏差,可在最佳時機與位置滴下研磨晶圓所需之漿液。In this embodiment, since the slurry ejection port 22 and the jet nozzles 231 to 238 are arranged on the same swing arm 21, the height of the slurry ejection port 22 can be lowered, thereby shortening the size of the slurry ejected from the slurry ejection port 22 to reach the polishing table. When the swing arm 21 is shaken and the slurry is ejected from the slurry ejection port 22, the distance and time on the 11 and 11, the drop position of the slurry is not easily displaced, and the slurry required for polishing the wafer can be dropped at the optimum timing and position.

研磨晶圓W後,停止從漿液吐出口22吐出漿液,如圖1所示,在可從各噴射噴嘴231~238噴射清洗流體至研磨台11之全面的方式定位搖動臂21之狀態下,從液體供給入口23b供給之液體(例如純水)通過液體流路23a而供給至各噴射噴嘴231~238及護蓋清洗噴嘴25,從各噴射噴嘴231~238將霧狀之清洗流體噴霧至研磨台11上,進行研磨台11的清洗,並且從護蓋清洗噴嘴25供給清洗液至護蓋24上,進行護蓋24之清洗。亦可使搖動臂21搖動,來控制從各噴射噴嘴231~238噴射之清洗流體的噴射位置。從各霧化器噴射噴嘴231~238及護蓋清洗噴嘴25噴射清洗流體進行至開始研磨下一個晶圓W之前(修整作業結束前)。After polishing the wafer W, the slurry ejection from the slurry ejection port 22 is stopped, and as shown in FIG. The liquid (for example, pure water) supplied from the liquid supply inlet 23b is supplied to each of the spray nozzles 231 to 238 and the cover cleaning nozzle 25 through the liquid flow path 23a, and the spray nozzles 231 to 238 spray mist-like cleaning fluid to the polishing table 11 , cleaning of the grinding table 11 is performed, and cleaning liquid is supplied from the cover cleaning nozzle 25 to the cover 24 to clean the cover 24 . The swing arm 21 may be swung to control the ejection position of the cleaning fluid ejected from each of the ejection nozzles 231 to 238 . The cleaning fluid is sprayed from each of the atomizer spray nozzles 231 to 238 and the cap cleaning nozzle 25 until the polishing of the next wafer W is started (before the trimming operation is completed).

本實施形態如圖4所示,因為位於搖動臂21前端部之噴射噴嘴231係以可清洗從漿液吐出口22吐出之漿液在研磨台11上的滴下位置之方式而傾斜設置,所以,即使從漿液吐出口22滴下漿液至研磨台11的中心附近時,仍可在研磨台11之中心附近充分噴射清洗流體來清洗,可減少殘留於研磨台11上之微粒子。微粒子為附著於晶圓表面之瑕疵(defect)的原因,因此,藉由漿液之排出性提高,晶圓之瑕疵減少效果提高。In this embodiment, as shown in FIG. 4 , since the spray nozzle 231 located at the front end of the swing arm 21 is inclined so as to clean the drop position of the slurry discharged from the slurry discharge port 22 on the polishing table 11, even if the spray nozzle 231 is discharged from the slurry discharge port 22, the When the slurry discharge port 22 drops the slurry to the vicinity of the center of the grinding table 11 , the cleaning fluid can be sufficiently sprayed near the center of the grinding table 11 for cleaning, which can reduce the particles remaining on the grinding table 11 . The fine particles are the cause of defects attached to the wafer surface. Therefore, the effect of reducing the defects of the wafer is improved by improving the dischargeability of the slurry.

再者,如先前技術所述,過去之CMP裝置為了避免設於搖動臂前端部之漿液吐出噴嘴與配置於研磨墊上之霧化器發生干擾,需要將漿液吐出噴嘴配置於比霧化器高的高度位置。因而,使搖動臂搖動而且從漿液吐出噴嘴吐出漿液時,漿液之滴下位置容易發生位置偏差,要將研磨晶圓所需之漿液在最佳時機與位置滴下很困難。Furthermore, as described in the prior art, in order to avoid interference between the slurry ejection nozzle provided at the tip of the rocker arm and the atomizer arranged on the polishing pad, the conventional CMP apparatus had to arrange the slurry ejection nozzle at a height higher than the atomizer. altitude position. Therefore, when the rocker arm is swung and the slurry is discharged from the slurry discharge nozzle, the position where the slurry is dropped tends to be misaligned, and it is difficult to drop the slurry required for polishing the wafer at the optimum timing and position.

相對而言,採用本實施形態時,因為將漿液吐出口22與噴射噴嘴231~238配置於同一個搖動臂21上,所以即使降低漿液吐出口22之高度位置,漿液吐出口22仍不致與噴射噴嘴干擾。因此,可降低漿液吐出口22之高度位置,藉此,縮短漿液從漿液吐出口22吐出而到達研磨台11上的距離及時間,使搖動臂21搖動而且使漿液從漿液吐出口22吐出時,漿液之滴下位置不易位置偏差,可在最佳時機與位置滴下研磨晶圓W所需的漿液。In contrast, in the present embodiment, since the slurry ejection port 22 and the jet nozzles 231 to 238 are arranged on the same swing arm 21, even if the height of the slurry ejection port 22 is lowered, the slurry ejection port 22 will not be in contact with the ejection port 22. Nozzle interference. Therefore, the height position of the slurry discharge port 22 can be lowered, thereby shortening the distance and time for the slurry discharged from the slurry discharge port 22 to reach the polishing table 11. The drop position of the slurry is not prone to positional deviation, and the slurry required for polishing the wafer W can be dropped at the optimum timing and position.

此外,採用本實施形態時,因為位於搖動臂21前端部之噴射噴嘴231係以可清洗從漿液吐出口22吐出之漿液在研磨台11上的滴下位置之方式而傾斜設置,所以,例如,即使從漿液吐出口22滴下漿液至研磨台11的中心附近時,仍可在研磨台11之中心附近噴射清洗流體來清洗,並可減少殘留於研磨台11上之微粒子。In addition, in the present embodiment, since the spray nozzle 231 located at the front end of the swing arm 21 is inclined so as to clean the drop position of the slurry discharged from the slurry discharge port 22 on the polishing table 11, for example, even if When the slurry is dropped from the slurry discharge port 22 to the vicinity of the center of the grinding table 11 , the cleaning fluid can still be sprayed near the center of the grinding table 11 for cleaning, and the particles remaining on the grinding table 11 can be reduced.

此外,採用本實施形態時,藉由將噴射噴嘴231~238與漿液吐出口22配置於同一個搖動臂21上,可謀求研磨裝置內之節省空間化。此外,藉由將噴射噴嘴231~238與漿液吐出口22配置於同一個搖動臂21上,使漿液吐出口22從研磨台11之台面退開時,亦可一併清洗噴射噴嘴231~238。In addition, according to this embodiment, by arranging the jet nozzles 231 to 238 and the slurry discharge port 22 on the same swing arm 21, space saving in the polishing apparatus can be achieved. In addition, by arranging the jet nozzles 231 to 238 and the slurry discharge port 22 on the same swing arm 21, when the slurry discharge port 22 is withdrawn from the table surface of the polishing table 11, the jet nozzles 231 to 238 can be cleaned together.

此外,將漿液吐出口22與噴射噴嘴231~238配置於同一個搖動臂21上時,不僅從漿液吐出口22吐出而在研磨台11上濺起之漿液,就連從噴射噴嘴231噴霧而在研磨台11上濺起的清洗流體也容易侵入漿液供給管27與管27之間而滯留,不過,採用本實施形態時,藉由護蓋24覆蓋漿液供給管27之周圍,可防止在研磨台11上濺起之液體侵入管27與管27之間而滯留。In addition, when the slurry discharge port 22 and the jet nozzles 231 to 238 are arranged on the same swing arm 21, not only the slurry discharged from the slurry jet port 22 but also the slurry splashed on the polishing table 11 is sprayed from the jet nozzle 231 and sprayed onto the polishing table 11. The cleaning fluid splashed on the polishing table 11 also tends to penetrate between the slurry supply pipe 27 and the pipe 27 and stay there. However, in the present embodiment, the surrounding of the slurry supply pipe 27 is covered by the protective cover 24 to prevent the slurry supply pipe 27 from entering the polishing table. The liquid splashed on the 11 penetrates between the tubes 27 and 27 and stays there.

此外,採用本實施形態時,因為護蓋24具有與研磨台11相對之下面24b,漿液管27之前端部向下貫穿該下面24b,並伸出於護蓋24的外側,所以漿液管27前端部之周圍更無間隙地被護蓋,可更確實防止在研磨台11上濺起之液體侵入管27與管27之間而滯留。In addition, in the present embodiment, since the protective cover 24 has a lower surface 24b facing the grinding table 11, and the front end of the slurry pipe 27 penetrates downwardly through the lower surface 24b and protrudes from the outer side of the protective cover 24, the front end of the slurry pipe 27 The periphery of the part is covered with no gap, so that the liquid splashed on the grinding table 11 can be more reliably prevented from intruding between the tubes 27 and the tubes 27 and staying there.

此外,採用本實施形態時,在搖動臂21之基端部設有護蓋清洗噴嘴25,藉由從護蓋清洗噴嘴25供給清洗液於護蓋24上可清洗護蓋24。藉此,在研磨晶圓W中,可防止附著於護蓋24之微粒子落在研磨台11上而污染晶圓W。In addition, in the present embodiment, the cover cleaning nozzle 25 is provided at the base end of the swing arm 21 , and the cover 24 can be cleaned by supplying cleaning liquid from the cover cleaning nozzle 25 to the cover 24 . In this way, in polishing the wafer W, the particles adhering to the protective cover 24 can be prevented from falling on the polishing table 11 and contaminating the wafer W.

此外,採用本實施形態時,因為在護蓋24之內面,以朝向沿著搖動臂21之長度方向而延伸之漿液管27而伸出的方式設有複數個肋24a,所以抑制、防止在搖動臂21上安裝護蓋24時,設於護蓋24內面之肋24a將漿液管27按壓於搖動臂21側,藉由對漿液管27施加壓力,管27浮起而與不接觸之護蓋24內壁干擾,或是在漿液管27上產生抖動、振盪的問題。藉此,可抑制藉由漿液管27浮起造成從漿液吐出口22吐出之漿液脈動,導致漿液之滴下位置不穩定。此外,從搖動臂21上拆卸護蓋24時,因為解除藉由設於護蓋24內面之肋24a壓住漿液管27,所以與將漿液管27在導管等中通過時比較,可輕易進行漿液管27的更換作業。In addition, according to the present embodiment, since a plurality of ribs 24a are provided on the inner surface of the protective cover 24 so as to protrude toward the slurry pipe 27 extending along the longitudinal direction of the swing arm 21, the When the protective cover 24 is installed on the rocking arm 21, the rib 24a provided on the inner surface of the protective cover 24 presses the slurry tube 27 against the rocking arm 21 side. The inner wall of the cover 24 interferes, or the slurry tube 27 produces vibration and vibration problems. Thereby, the pulsation of the slurry discharged from the slurry discharge port 22 due to the floating of the slurry pipe 27 can be suppressed, and the instability of the drop position of the slurry can be suppressed. In addition, when removing the cover 24 from the swing arm 21, since the pressing of the slurry pipe 27 by the ribs 24a provided on the inner surface of the cover 24 is released, it can be easily performed compared to when the slurry pipe 27 is passed through a conduit or the like. Replacement work of the slurry tube 27 .

此外,採用本實施形態時,因為在搖動臂21中,將漿液吐出口22配置於比噴射噴嘴231~238接近晶圓W側,可在更接近晶圓W之位置吐出漿液,可在更最佳時機與位置滴下研磨晶圓W所需的漿液。In addition, according to the present embodiment, since the swing arm 21 disposes the slurry discharge port 22 on the side closer to the wafer W than the ejection nozzles 231 to 238, the slurry can be discharged at a position closer to the wafer W, and the slurry can be discharged at a position closer to the wafer W. Drop the slurry required for polishing the wafer W at the right time and place.

此外,採用本實施形態時,因為將漿液管27固定於霧化器本體(亦即搖動臂21),所以剛性提高,漿液管27前端部之振動變小。此外,作為比較例而考慮將漿液管27傾斜地,或是遠離研磨台而配置,並在研磨台中央吐出漿液的構成時,該比較例之構成會有藉由漿液之流速變化而滴下位置容易振動的問題,不過本實施形態係在搖動臂21中,將漿液吐出口22配置於比噴射噴嘴231~238接近晶圓W側,因為該漿液吐出口22係垂直向下,所以漿液滴下位置之位置控制容易。此外,噴射噴嘴231~238之噴射位置計算,關於該垂直向下滴下方面,因為保持與漿液吐出口22之相對位置關係,所以只須以通過與漿液吐出口22相同軌跡之方式來控制即可。In addition, according to this embodiment, since the slurry tube 27 is fixed to the atomizer body (ie, the swing arm 21 ), the rigidity is improved, and the vibration of the front end of the slurry tube 27 is reduced. In addition, if the slurry pipe 27 is inclined as a comparative example or is disposed away from the grinding table, and the slurry is discharged at the center of the grinding table, the structure of the comparative example may cause the drop position to vibrate easily due to the change in the flow rate of the slurry. However, in this embodiment, in the rocker arm 21, the slurry discharge port 22 is arranged on the wafer W side than the jet nozzles 231 to 238. Since the slurry discharge port 22 is vertically downward, the position of the slurry drop position is Control is easy. In addition, in the calculation of the ejection positions of the ejection nozzles 231 to 238, since the relative positional relationship with the slurry ejection port 22 is maintained regarding the vertical downward drop, it is only necessary to control it so as to pass the same trajectory as that of the slurry ejection port 22. .

圖6係顯示研磨裝置10之一部分的縱剖面圖,圖7係研磨裝置10之系統構成圖。如圖6所示,研磨裝置10之研磨台11與配置於其下方之馬達50連結,並如箭頭所示,可在其軸心周圍旋轉。此外,在研磨台11之上面貼設有具有研磨面52a之研磨墊(研磨布)52。此外,上方環形轉盤12連結於上方環形轉盤軸桿54,在上方環形轉盤12之下部外周部設有保持半導體晶圓W之外周緣的扣環56。FIG. 6 is a longitudinal sectional view showing a part of the polishing apparatus 10 , and FIG. 7 is a system configuration diagram of the polishing apparatus 10 . As shown in FIG. 6, the grinding table 11 of the grinding|polishing apparatus 10 is connected to the motor 50 arrange|positioned below it, and it can rotate about the axis|shaft center as shown by the arrow. In addition, a polishing pad (polishing cloth) 52 having a polishing surface 52 a is attached to the upper surface of the polishing table 11 . In addition, the upper annular turntable 12 is connected to the upper annular turntable shaft 54 , and a retaining ring 56 for holding the outer periphery of the semiconductor wafer W is provided on the lower outer peripheral portion of the upper annular turntable 12 .

上方環形轉盤12連結於馬達(無圖示),並且連結於升降汽缸(無圖示)。藉此,上方環形轉盤12如箭頭所示可升降且可在其軸心周圍旋轉,而可將半導體晶圓W對研磨墊52之研磨面52a以任何壓力按壓。The upper annular turntable 12 is connected to a motor (not shown), and is also connected to a lift cylinder (not shown). Thereby, the upper annular turntable 12 can be raised and lowered as shown by the arrow and can be rotated around its axis, and the semiconductor wafer W can be pressed against the polishing surface 52a of the polishing pad 52 with any pressure.

在研磨台11之內部埋設有作為測量形成於半導體晶圓W表面之銅膜等金屬薄膜的膜厚之作為膜厚監視器的渦電流感測器58。來自渦電流感測器(膜厚監視器)58之配線60通過研磨台11及支撐軸62中,並經由設於支撐軸62之軸端的旋轉連接器(或是集電環)64而連接於控制器66。該渦電流感測器58通過半導體晶圓W之下方時,可在通過軌跡上連續地測量形成於半導體晶圓W表面之銅膜等導電膜的膜厚。控制器66亦可係其控制對象與設置場所在研磨模組內,且係關於研磨模組內之作業的研磨模組內的控制器,或是關於包含至清洗、乾燥裝置之整個研磨裝置的作業之研磨裝置的控制器。又此外,控制器66亦可配置於研磨裝置之清洗、乾燥模組內。再者,亦可配置於設置基板處理系統之工廠內的機架外側。再者,控制器66係由複數個電腦構成,上述複數個電腦亦可分散配置於工廠內。換言之,構成控制器66之至少1台電腦亦可配置於清洗、乾燥模組內、清洗、乾燥模組附近、或是從清洗、乾燥模組離開之基板處理系統內。再者,亦可在半導體基板製造工廠內之複數個基板處理系統的1條生產線上配置構成控制器66之至少1台電腦。再者,構成控制器66之複數個電腦亦可配置於複數個基板處理系統之複數條生產線上。再者,構成控制器66之至少1台電腦亦可配置於工廠內之生產線控制、監視場所、及生產線控制、監視系統內。再者,亦可配置於半導體基板製造企業之複數個工廠監視場所及工廠監視系統內,或是CMP裝置製造、設置企業內。An eddy current sensor 58 serving as a film thickness monitor for measuring the film thickness of a metal thin film such as a copper film formed on the surface of the semiconductor wafer W is embedded in the polishing table 11 . The wiring 60 from the eddy current sensor (film thickness monitor) 58 passes through the polishing table 11 and the support shaft 62 , and is connected to the rotary connector (or slip ring) 64 provided at the shaft end of the support shaft 62 . controller 66. When the eddy current sensor 58 passes under the semiconductor wafer W, the film thickness of a conductive film such as a copper film formed on the surface of the semiconductor wafer W can be continuously measured on the passing track. The controller 66 can also be a controller whose control object and setting place are located in the grinding module, and the controller in the grinding module related to the operation in the grinding module, or the entire grinding device including the cleaning and drying device. The controller of the grinding unit for operation. In addition, the controller 66 can also be disposed in the cleaning and drying modules of the polishing apparatus. Furthermore, it can also be arrange|positioned on the outer side of the rack in the factory in which the substrate processing system is installed. Furthermore, the controller 66 is constituted by a plurality of computers, and the plurality of computers may be distributed in the factory. In other words, at least one computer constituting the controller 66 may also be disposed in the cleaning and drying module, near the cleaning and drying module, or in the substrate processing system separated from the cleaning and drying module. Furthermore, at least one computer constituting the controller 66 may be disposed on one production line of a plurality of substrate processing systems in a semiconductor substrate manufacturing plant. Furthermore, a plurality of computers constituting the controller 66 can also be arranged on a plurality of production lines of a plurality of substrate processing systems. Furthermore, at least one computer constituting the controller 66 may be arranged in a production line control and monitoring place in a factory, and in a production line control and monitoring system. Furthermore, it may be arranged in a plurality of factory monitoring sites and factory monitoring systems of a semiconductor substrate manufacturing company, or in a CMP apparatus manufacturing and installation company.

另外,本例係使用渦電流感測器測量形成於半導體晶圓表面之銅膜等金屬薄膜的膜厚,不過,亦可取代渦電流感測器而使用光學式感測器,在研磨中測量設於半導體晶圓表面之氧化膜薄膜等光學性透明的薄膜之膜厚。In addition, in this example, an eddy current sensor is used to measure the film thickness of a metal thin film such as a copper film formed on the surface of a semiconductor wafer, but an optical sensor may be used instead of the eddy current sensor to measure during polishing The thickness of optically transparent thin films such as oxide films formed on the surface of semiconductor wafers.

亦可具備測量半導體晶圓表面之研磨後輪廓的研磨輪廓監視器,並將該研磨輪廓監視器之測量結果輸入模擬器72,作為實際研磨輪廓,不過無圖示。A polishing profile monitor for measuring the polished profile of the surface of the semiconductor wafer may also be provided, and the measurement result of the polishing profile monitor is input to the simulator 72 as the actual polishing profile, but not shown.

如圖7所示,搖動臂21隨著作為驅動機構之伺服馬達262的旋轉,而在研磨面52a之上方沿著水平面搖動,並隨著該搖動臂21之搖動,朝向前端下方之漿液吐出口22、換言之研磨液供給位置沿著研磨面52a之概略半徑方向而移動。伺服馬達(驅動機構)262連接於控制器66。As shown in FIG. 7 , the swing arm 21 swings along the horizontal plane above the grinding surface 52 a with the rotation of the servo motor 262 serving as the driving mechanism, and as the swing arm 21 swings, it moves toward the slurry discharge port below the front end. 22. In other words, the polishing liquid supply position moves along the approximate radial direction of the polishing surface 52a. The servo motor (drive mechanism) 262 is connected to the controller 66 .

控制器66連接有:搖動臂21之漿液吐出口(研磨液供給位置)22;及預測與在該研磨液供給位置將研磨液供給至研磨面52a,而且進行研磨時之研磨輪廓的關係,例如依據希望之研磨輪廓進行模擬的模擬器72。The controller 66 is connected to: the slurry discharge port (polishing liquid supply position) 22 of the swing arm 21; and the relationship between the prediction and the polishing profile when the polishing liquid is supplied to the polishing surface 52a at the polishing liquid supply position and the polishing is performed, for example A simulator 72 that simulates according to the desired grinding profile.

記憶於模擬器72之資料庫由沿著搖動臂21之漿液吐出口22的圖7所示之圓弧延長線的位置之複數個研磨液供給位置:α(°);與沿著在該研磨液供給位置供給研磨液而且進行半導體晶圓W之研磨時該半導體晶圓W的圖7所示之半徑γ的晶圓位置:γ(mm)之各交點的研磨率:RR(α, γ)(nm/min)而構成。從該資料庫之各研磨液供給位置:α中的研磨率:RR(α, γ),例如對應於研磨液供給位置α=60(°)之研磨率:RR(60, γ),判斷從各研磨液供給位置:α供給研磨液而且進行一定時間研磨時的研磨輪廓。換言之,在該資料庫中,研磨率亦表示繼續一定時間進行研磨時之研磨輪廓。The database stored in the simulator 72 is supplied by a plurality of polishing liquid supply positions along the position of the arc extension line shown in FIG. 7 of the slurry discharge port 22 of the swing arm 21: α (°); Liquid supply position When polishing liquid is supplied and semiconductor wafer W is polished (nm/min). From the polishing liquid supply position of the database: polishing rate in α: RR (α, γ), for example, the polishing rate corresponding to the polishing liquid supply position α=60 (°): RR (60, γ), it is judged from Each polishing liquid supply position: α is the polishing profile when polishing liquid is supplied and polishing is performed for a certain period of time. In other words, in the database, the grinding rate also represents the grinding profile when grinding is continued for a certain period of time.

在如此構成之研磨裝置10中,使半導體晶圓W保持於上方環形轉盤12之下面,並藉由升降汽缸將半導體晶圓W按壓於旋轉之研磨台11上面的研磨墊52。而後,藉由使搖動臂21搖動,而且從漿液吐出口22供給研磨液Q至研磨墊52上,在半導體晶圓W的被研磨面(下面)與研磨墊52之間存在研磨液Q的狀態下進行半導體晶圓W表面之研磨。該研磨時,藉由控制器66控制伺服馬達262而且使搖動臂21搖動,使從漿液吐出口22供給之研磨液Q的供給位置(研磨液供給位置)沿著指定的移動圖案而移動。該研磨液供給位置之移動圖案由模擬器72預測,並輸入控制器66作決定。In the polishing apparatus 10 thus constructed, the semiconductor wafer W is held under the upper annular turntable 12, and the semiconductor wafer W is pressed against the polishing pad 52 on the rotating polishing table 11 by the lift cylinder. Then, by swinging the swing arm 21 and supplying the polishing liquid Q from the slurry discharge port 22 onto the polishing pad 52 , the polishing liquid Q exists between the polished surface (lower surface) of the semiconductor wafer W and the polishing pad 52 . Next, grinding of the surface of the semiconductor wafer W is performed. During this polishing, the controller 66 controls the servo motor 262 and swings the swing arm 21 to move the supply position (polishing liquid supply position) of the polishing liquid Q supplied from the slurry discharge port 22 along a predetermined movement pattern. The movement pattern of the slurry supply position is predicted by the simulator 72 and input to the controller 66 for determination.

其次,參照圖8、圖9A及圖9B說明藉由模擬器72預測研磨液供給位置,亦即搖動臂21之漿液吐出口22的移動圖案。8 , 9A and 9B , the prediction of the polishing liquid supply position by the simulator 72 , that is, the movement pattern of the slurry discharge port 22 of the swing arm 21 will be described.

首先,模擬器72讀取搖動臂21之可搖動範圍,換言之,圖9B所示之漿液吐出口(研磨液供給位置)22的活動範圍A、最小及最多速度變化點數、及速度變化時之加減速度等的計算參數(步驟1)。First, the simulator 72 reads the swingable range of the swing arm 21 , in other words, the movable range A of the slurry discharge port (polishing liquid supply position) 22 shown in FIG. 9B , the minimum and maximum speed change points, and the speed change Calculation parameters such as acceleration and deceleration (step 1).

其次,模擬器72從過去資料及之前的資料等讀取搖動臂21之研磨液供給位置與實際研磨輪廓的關係作為時驗資料(步驟2)。參照顯示該時驗資料要求之搖動臂21的複數點之研磨液供給位置與研磨率(研磨輪廓)的關係之資料庫,必要時藉由N次回歸、傅里葉轉換、樣條回歸及小波轉換之至少一種方法,預測任意研磨液供給位置與研磨率(研磨輪廓)之關係並記憶(步驟3)。Next, the simulator 72 reads the relationship between the polishing liquid supply position of the swing arm 21 and the actual polishing profile from past data and previous data, etc., as time-test data (step 2). Refer to the database showing the relationship between the polishing liquid supply position and polishing rate (polishing profile) of the multiple points of the rocker arm 21 required by the time-tested data, and if necessary, use N-fold regression, Fourier transform, spline regression and wavelet At least one method of conversion is to predict and memorize the relationship between the supply position of any polishing liquid and the polishing rate (polishing profile) (step 3).

另外,直接或從研磨裝置(CMP)將研磨後之希望研磨輪廓輸入模擬器70(步驟4)。In addition, the desired polishing profile after polishing is input into the simulator 70 directly or from the polishing apparatus (CMP) (step 4).

其次,例如設置圖9B所示之研磨液開始供給位置S、研磨液供給返回位置R、速度變化位置P1~P4、及各速度變化位置之間S~P1、P1~P2、P2~P3、P3~P4、P4~R的漿液吐出口之移動速度V1~V5等研磨液供給位置的移動圖案之計算初始值(步驟5)。再者,設定最大重複次數、容許輪廓誤差(希望之輪廓與預想輪廓的誤差)等之計算時的限制(步驟6)。Next, for example, as shown in FIG. 9B, the polishing liquid supply start position S, the polishing liquid supply return position R, the speed changing positions P1 to P4, and the positions S to P1, P1 to P2, P2 to P3, and P3 between the speed changing positions are set. Calculate the initial value of the movement pattern of the polishing liquid supply position, such as the moving speeds V1 to V5 of the slurry discharge ports of to P4 and P4 to R (step 5). Furthermore, the maximum number of repetitions, the allowable contour error (error between the desired contour and the expected contour), etc., are set as the limits at the time of calculation (step 6).

經過以上各步驟,模擬器70參照資料庫求出以假設之研磨液供給位置移動圖案使研磨液供給位置移動而且進行研磨時的研磨輪廓(研磨率)(步驟7)。After each of the above steps, the simulator 70 obtains a polishing profile (polishing rate) when polishing is performed by moving the polishing liquid supply position with the assumed polishing liquid supply position movement pattern with reference to the database (step 7 ).

而後,計算希望之研磨輪廓與步驟7之計算求出的研磨輪廓之差(步驟8),判斷該差是否在步驟6所設定之容許輪廓誤差的範圍內,或是到達最大重複數(步驟9)。Then, calculate the difference between the desired grinding profile and the grinding profile obtained by the calculation in step 7 (step 8), and judge whether the difference is within the allowable profile error range set in step 6, or reaches the maximum number of repetitions (step 9). ).

而後,當希望之研磨輪廓與計算求出的研磨輪廓之差不在容許輪廓誤差範圍內時,為了再計算假設之研磨液供給位置移動圖案而返回步驟7(步驟10)。而後,重複該步驟,當希望之研磨輪廓與計算求出的研磨輪廓之差在容許輪廓誤差的範圍內時,或是即使希望之研磨輪廓與計算求出的研磨輪廓之差不在容許輪廓誤差範圍內,但是已到達步驟6所設定之最大重複數時,顯示成為步驟7所計算之研磨輪廓的研磨液供給位置之移動圖案且儲存,並輸入控制器66(步驟11)。Then, when the difference between the desired polishing profile and the calculated polishing profile is not within the allowable profile error range, the process returns to step 7 (step 10 ) in order to recalculate the assumed polishing liquid supply position movement pattern. Then, repeat this step until the difference between the desired grinding profile and the calculated grinding profile is within the allowable profile error range, or even if the difference between the desired grinding profile and the calculated grinding profile is not within the allowable profile error range However, when the maximum number of repetitions set in step 6 has been reached, the moving pattern of the polishing liquid supply position that becomes the polishing profile calculated in step 7 is displayed, stored, and input to the controller 66 (step 11).

控制器66接受來自模擬器70之輸入,以搖動臂21之漿液吐出口22沿著研磨中的研磨液供給位置之移動圖案而移動的方式,控制作為移動機構之伺服馬達262而使搖動臂21搖動。The controller 66 receives the input from the simulator 70, and controls the servo motor 262 as the moving mechanism to make the swing arm 21 move so that the slurry discharge port 22 of the swing arm 21 moves along the movement pattern of the polishing liquid supply position during polishing. shake.

本例係在半導體晶圓之研磨中,藉由渦電流感測器58取得形成於半導體晶圓表面之銅膜等金屬薄膜的膜厚分布(研磨輪廓),並輸入模擬器72。藉由模擬器72瞬間比較在圖8之步驟4所輸入的希望之研磨輪廓與研磨中藉由渦電流感測器58所取得的膜厚分布(研磨輪廓)而求差,為了作為希望之研磨輪廓而進行必要研磨條件的模擬。並依據藉由模擬所獲得之研磨條件,以變成希望之輪廓的方式,更新搖動臂21之搖動圖案,換言之漿液吐出口(研磨液供給位置)22之移動圖案。In this example, during polishing of a semiconductor wafer, the eddy current sensor 58 acquires the film thickness distribution (polishing profile) of a metal thin film such as a copper film formed on the surface of the semiconductor wafer, and inputs it to the simulator 72 . The simulator 72 instantaneously compares the desired polishing profile input in step 4 of FIG. 8 with the film thickness distribution (polishing profile) acquired by the eddy current sensor 58 during polishing to obtain the difference, in order to obtain the desired polishing Simulate the necessary grinding conditions according to the contour. And according to the polishing conditions obtained by the simulation, the swing pattern of the swing arm 21 , in other words, the movement pattern of the slurry discharge port (polishing liquid supply position) 22 is updated so as to have a desired profile.

如此控制搖動臂21之搖動圖案,以形成於研磨後之半導體晶圓表面的銅膜等金屬薄膜之膜厚分布(研磨輪廓)成為希望的輪廓之方式進行希望的研磨,並使研磨完成。The swing pattern of the swing arm 21 is controlled in this way so that the desired polishing is performed so that the film thickness distribution (polishing profile) of a metal thin film such as a copper film formed on the surface of the polished semiconductor wafer becomes a desired profile, and the polishing is completed.

另外,上述實施形態係基於朝向研磨台11吹送清洗流體(液體或氣體與液體之混合流體),來除去研磨台11上之異物的目的而利用噴射噴嘴231~238,不過並非限定於此者,亦可基於朝向研磨台11吹送溫度調整後之液體來調節研磨台11的表面溫度之目的而利用噴射噴嘴231~238。In the above-described embodiment, the jet nozzles 231 to 238 are used for the purpose of removing foreign matter on the polishing table 11 by blowing the cleaning fluid (liquid or a mixed fluid of gas and liquid) toward the polishing table 11, but it is not limited to this. The spray nozzles 231 to 238 may also be used for the purpose of adjusting the surface temperature of the polishing table 11 by blowing the temperature-adjusted liquid toward the polishing table 11 .

以上說明了本技術適合之實施形態,不過本技術不限定於上述實施形態,在其技術性思想之範圍內當然可以各種不同形態來實施。The preferred embodiments of the present technology have been described above. However, the present technology is not limited to the above-described embodiments, and can of course be implemented in various forms within the scope of the technical idea.

10:研磨裝置 11:研磨台 12:上方環形轉盤 13:修整器 14:上方環形轉盤頭 20:液體供給裝置 21:搖動臂 22:漿液吐出口 23a:液體流路 23b:液體供給入口 23c:控制閥 231~238:噴射噴嘴 24:護蓋 24a:肋 24b:下面 25:護蓋清洗噴嘴 251:第一噴嘴 252:第二噴嘴 253:第三噴嘴 26:搖動手段 261:搖動軸 262:伺服馬達 27:漿液管 50:馬達 52:研磨墊 52a:研磨面 54:上方環形轉盤軸桿 56:扣環 58:渦電流感測器 60:配線 62:支撐軸 64:旋轉連接器 66:控制器 70,72:模擬器 P1~P4:速度變化位置 Q:研磨液 R:研磨液供給返回位置 S:研磨液開始供給位置 V1~V5:移動速度 W:晶圓10: Grinding device 11: Grinding table 12: The upper ring turntable 13: Dresser 14: Upper ring turntable head 20: Liquid supply device 21: rocker arm 22: Slurry spit outlet 23a: Liquid flow path 23b: Liquid supply inlet 23c: Control valve 231~238: jet nozzle 24: Cover 24a: Ribs 24b: Below 25: Cover cleaning nozzle 251: First Nozzle 252: Second Nozzle 253: Third Nozzle 26: Shake Means 261: Shake Shaft 262: Servo motor 27: Slurry tube 50: Motor 52: Polishing pad 52a: Grinding surface 54: Upper ring turntable shaft 56: Buckle 58: Eddy current sensor 60: Wiring 62: Support shaft 64: Rotary connector 66: Controller 70,72: Simulator P1~P4: Speed change position Q: Grinding fluid R: Grinding liquid supply return position S: The position where the slurry starts to be supplied V1~V5: Movement speed W: Wafer

圖1係顯示一種實施形態之研磨裝置的概略構成俯視圖。 圖2係放大顯示圖1所示之研磨裝置具備的液體供給裝置之立體圖。 圖3係圖2所示之液體供給裝置的縱剖面圖。 圖4係從前端側觀看圖2所示之液體供給裝置的搖動臂之前視圖。 圖5係從斜下方觀看圖2所示之液體供給裝置的搖動臂前端部之圖。 圖6係顯示圖1所示之研磨裝置的概要之縱剖面圖。 圖7係圖6所示之研磨裝置的系統構成圖。 圖8係藉由模擬器模擬之預想流程圖。 圖9A係顯示藉由模擬器模擬之研磨面、搖動臂及漿液吐出口(研磨液供給位置)的關係之俯視圖。 圖9B係顯示藉由模擬器模擬之研磨面、搖動臂及漿液吐出口(研磨液供給位置)的關係之前視圖。FIG. 1 is a plan view showing a schematic configuration of a polishing apparatus according to an embodiment. FIG. 2 is an enlarged perspective view showing a liquid supply device included in the polishing apparatus shown in FIG. 1 . FIG. 3 is a longitudinal sectional view of the liquid supply device shown in FIG. 2 . Fig. 4 is a front view of the swing arm of the liquid supply device shown in Fig. 2 viewed from the front end side. Fig. 5 is a view of the front end portion of the rocker arm of the liquid supply device shown in Fig. 2 viewed obliquely from below. FIG. 6 is a longitudinal sectional view showing the outline of the polishing apparatus shown in FIG. 1 . FIG. 7 is a system configuration diagram of the polishing apparatus shown in FIG. 6 . Figure 8 is an envisioned flow chart simulated by a simulator. 9A is a plan view showing the relationship between the polishing surface, the swing arm, and the slurry discharge port (polishing liquid supply position) simulated by the simulator. 9B is a front view showing the relationship between the polishing surface, the rocking arm, and the slurry discharge port (polishing liquid supply position) simulated by the simulator.

10:研磨裝置 10: Grinding device

11:研磨台 11: Grinding table

13:修整器 13: Dresser

14:上方環形轉盤頭 14: Upper ring turntable head

20:液體供給裝置 20: Liquid supply device

21:搖動臂 21: rocker arm

22:漿液吐出口 22: Slurry spit outlet

231~238:噴射噴嘴 231~238: jet nozzle

58:渦電流感測器 58: Eddy current sensor

W:晶圓 W: Wafer

Claims (16)

一種液體供給裝置,其特徵為具備: 搖動臂,其係可在研磨台之上方水平地搖動; 漿液管,其係沿著前述搖動臂之長度方向而延伸,並從前端部之漿液吐出口吐出漿液至前述研磨台上;及 複數個噴射噴嘴,其係沿著前述搖動臂之長度方向並列設置,並在前述研磨台上噴射清洗流體; 前述漿液吐出口定位於前述搖動臂之前端部, 位於前述搖動臂之前端部的噴射噴嘴係以可清洗從前述漿液吐出口吐出之漿液在前述研磨台上的滴下位置之方式而傾斜設置。A liquid supply device is characterized by having: A rocking arm, which can be rocked horizontally above the grinding table; A slurry pipe, which extends along the longitudinal direction of the rocking arm, and discharges the slurry from the slurry outlet at the front end to the grinding table; and a plurality of spray nozzles, which are arranged in parallel along the length direction of the rocking arm, and spray cleaning fluid on the grinding table; The slurry outlet is positioned at the front end of the rocking arm, The spray nozzles located at the front end of the swing arm are inclined so as to clean the drop position of the slurry discharged from the slurry discharge port on the grinding table. 如請求項1之液體供給裝置,其中前述漿液管之周圍係藉由用於防止在前述研磨台上濺起之液體侵入管與管之間而滯留的護蓋來覆蓋。The liquid supply device according to claim 1, wherein the periphery of the slurry pipe is covered by a cover for preventing the liquid splashed on the grinding table from intruding between the pipes and remaining therebetween. 如請求項2之液體供給裝置,其中前述護蓋具有與前述研磨台相對之下面,前述漿液管之前端部向下貫穿該下面而伸出該護蓋的外側。The liquid supply device of claim 2, wherein the protective cover has a lower surface opposite to the grinding table, and the front end of the slurry pipe penetrates downward through the lower surface and protrudes from the outer side of the protective cover. 如請求項2或3之液體供給裝置,其中在前述搖動臂之基端部設有護蓋清洗噴嘴,其係在前述護蓋上供給清洗液。The liquid supply device according to claim 2 or 3, wherein a cover cleaning nozzle is provided at the base end of the swing arm, and the cleaning liquid is supplied to the cover. 如請求項4之液體供給裝置,其中前述護蓋清洗噴嘴具有:第一噴嘴,其係在前述護蓋之上面供給清洗液;第二噴嘴,其係在前述護蓋之右側面供給清洗液;及第三噴嘴,其係在前述護蓋之左側面供給清洗液。The liquid supply device according to claim 4, wherein the protective cover cleaning nozzle has: a first nozzle, which is connected to the upper surface of the protective cover to supply the cleaning liquid; and a second nozzle, which is connected to the right side of the protective cover to supply the cleaning liquid; and a third nozzle, which supplies cleaning fluid on the left side of the aforementioned protective cover. 如請求項2~5中任一項之液體供給裝置,其中在前述護蓋之內面,以朝向沿著前述搖動臂之表面爬行的前述漿液管而伸出之方式設有複數個肋。The liquid supply device according to any one of claims 2 to 5, wherein a plurality of ribs are provided on the inner surface of the protective cover so as to protrude toward the slurry pipe that crawls along the surface of the swing arm. 如請求項1~6中任一項之液體供給裝置,其中在前述搖動臂中,前述漿液吐出口配置於比前述噴射噴嘴靠近研磨對象物之側。The liquid supply device according to any one of claims 1 to 6, wherein in the swing arm, the slurry discharge port is disposed on a side closer to the object to be polished than the jet nozzle. 如請求項1~7中任一項之液體供給裝置,其中前述搖動臂之驅動機構係由伺服馬達與減速機而構成。The liquid supply device according to any one of claims 1 to 7, wherein the drive mechanism of the rocking arm is constituted by a servo motor and a speed reducer. 一種研磨裝置,其特徵為具備液體供給裝置,前述液體供給裝置具備: 搖動臂,其係可在研磨台之上方水平地搖動; 漿液管,其係沿著前述搖動臂之長度方向而延伸,並從前端部之漿液吐出口吐出漿液至前述研磨台上;及 複數個噴射噴嘴,其係沿著前述搖動臂之長度方向並列設置,並在前述研磨台上噴射清洗流體; 前述漿液吐出口定位於前述搖動臂之前端部, 位於前述搖動臂之前端部的噴射噴嘴係以可清洗從前述漿液吐出口吐出之漿液在前述研磨台上的滴下位置之方式而傾斜設置。A grinding device is characterized by having a liquid supply device, and the liquid supply device includes: A rocking arm, which can be rocked horizontally above the grinding table; A slurry pipe, which extends along the longitudinal direction of the rocking arm, and discharges the slurry from the slurry outlet at the front end to the grinding table; and a plurality of spray nozzles, which are arranged in parallel along the length direction of the rocking arm, and spray cleaning fluid on the grinding table; The slurry outlet is positioned at the front end of the rocking arm, The spray nozzles located at the front end of the swing arm are inclined so as to clean the drop position of the slurry discharged from the slurry discharge port on the grinding table. 如請求項9之研磨裝置,其中前述漿液管之周圍係藉由用於防止在前述研磨台上濺起之液體侵入管與管之間而滯留的護蓋來覆蓋。The grinding apparatus of claim 9, wherein the periphery of the slurry tube is covered by a cover for preventing the liquid splashed on the grinding table from invading between the tubes and staying there. 如請求項10之研磨裝置,其中前述護蓋具有與前述研磨台相對之下面,前述漿液管之前端部向下貫穿該下面而伸出該護蓋的外側。The grinding device of claim 10, wherein the protective cover has a lower surface opposite to the grinding table, and the front end of the slurry pipe penetrates downwardly through the lower surface and protrudes from the outer side of the protective cover. 如請求項10或11之研磨裝置,其中在前述搖動臂之基端部設有護蓋清洗噴嘴,其係在前述護蓋上供給清洗液。The grinding apparatus according to claim 10 or 11, wherein a cover cleaning nozzle is provided at the base end of the rocking arm, and the cleaning liquid is supplied on the cover. 如請求項12之研磨裝置,其中前述護蓋清洗噴嘴具有:第一噴嘴,其係在前述護蓋之上面供給清洗液;第二噴嘴,其係在前述護蓋之右側面供給清洗液;及第三噴嘴,其係在前述護蓋之左側面供給清洗液。The grinding device of claim 12, wherein the protective cover cleaning nozzle has: a first nozzle, which supplies cleaning liquid on the upper surface of the protective cover; a second nozzle, which supplies cleaning liquid on the right side of the protective cover; and The third nozzle is used to supply cleaning liquid on the left side of the aforementioned protective cover. 如請求項10~13中任一項之研磨裝置,其中在前述護蓋之內面,以朝向沿著前述搖動臂之表面爬行的前述漿液管而伸出之方式設有複數個肋。The grinding device according to any one of claims 10 to 13, wherein a plurality of ribs are provided on the inner surface of the protective cover so as to protrude toward the slurry pipe that crawls along the surface of the rocking arm. 如請求項9~14中任一項之研磨裝置,其中在前述搖動臂中,前述漿液吐出口配置於比前述噴射噴嘴靠近研磨對象物之側。The polishing apparatus according to any one of claims 9 to 14, wherein in the swing arm, the slurry discharge port is disposed on a side closer to the object to be polished than the jet nozzle. 如請求項9~15中任一項之研磨裝置,其中前述搖動臂之驅動機構係由伺服馬達與減速機而構成。The grinding device according to any one of claims 9 to 15, wherein the drive mechanism of the rocking arm is constituted by a servo motor and a reducer.
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CN114843212A (en) * 2022-04-29 2022-08-02 浙江晶睿电子科技有限公司 Multifunctional semiconductor cavity type processing equipment

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US6139406A (en) * 1997-06-24 2000-10-31 Applied Materials, Inc. Combined slurry dispenser and rinse arm and method of operation
KR100443770B1 (en) * 2001-03-26 2004-08-09 삼성전자주식회사 Method and apparatus for polishing a substrate
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CN114843212A (en) * 2022-04-29 2022-08-02 浙江晶睿电子科技有限公司 Multifunctional semiconductor cavity type processing equipment
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