TW202206227A - Liquid supply device and polishing device - Google Patents
Liquid supply device and polishing device Download PDFInfo
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- TW202206227A TW202206227A TW110124457A TW110124457A TW202206227A TW 202206227 A TW202206227 A TW 202206227A TW 110124457 A TW110124457 A TW 110124457A TW 110124457 A TW110124457 A TW 110124457A TW 202206227 A TW202206227 A TW 202206227A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/06—Dust extraction equipment on grinding or polishing machines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Abstract
Description
本揭示係關於一種液體供給裝置及研磨裝置。The present disclosure relates to a liquid supply device and a polishing device.
近年來,隨著半導體元件之高積體化的進展,電路配線不斷微細化,配線間距離亦更狹窄。半導體元件的製造係將許多種類之材料反覆膜狀地形成於矽晶圓上而形成積層構造。為了形成該積層構造,將晶圓表面形成平坦之技術很重要。將此種晶圓表面平坦化之一種機構係廣泛使用進行化學機械研磨(CMP)的研磨裝置。In recent years, with the progress of high integration of semiconductor elements, circuit wiring has been miniaturized, and the distance between wirings has also been narrowed. In the manufacture of semiconductor devices, many kinds of materials are repeatedly formed on a silicon wafer to form a laminated structure. In order to form this laminated structure, a technique for flattening the wafer surface is important. As one mechanism for planarizing such a wafer surface, a polishing apparatus that performs chemical mechanical polishing (CMP) is widely used.
化學機械研磨(CMP)裝置一般而言具備:安裝有研磨墊之研磨台;保持晶圓之上方環形轉盤(研磨頭);及將研磨液(漿液)供給至研磨墊上之漿液吐出噴嘴。從漿液吐出噴嘴供給研磨液至研磨墊上,而且藉由上方環形轉盤將晶圓按壓於研磨墊,進一步藉由使上方環形轉盤與研磨台相對移動來研磨晶圓,而將其表面形成平坦。A chemical mechanical polishing (CMP) apparatus generally includes: a polishing table on which a polishing pad is installed; an annular turntable (polishing head) holding a wafer above; and a slurry discharge nozzle for supplying polishing liquid (slurry) onto the polishing pad. The polishing liquid is supplied from the slurry discharge nozzle to the polishing pad, and the wafer is pressed against the polishing pad by the upper annular turntable, and the wafer is polished by moving the upper annular turntable and the polishing table relatively to make the surface flat.
進行晶圓之研磨後,研磨屑及研磨液中所含之研磨粒等的微粒子會殘留於研磨墊上。因此,在研磨晶圓後,係從具有朝向研磨墊噴射液體或氣體與液體之混合流體的至少1個之噴射噴嘴的霧化器,將霧狀之清洗流體(液體、或液體與氣體之混合)噴霧於研磨墊上,來除去研磨墊上之異物。After the wafer is polished, fine particles such as polishing dust and abrasive grains contained in the polishing liquid remain on the polishing pad. Therefore, after polishing the wafer, a mist-like cleaning fluid (liquid, or a mixture of liquid and gas) is sprayed from an atomizer having at least one spray nozzle that sprays liquid or a mixture of gas and liquid toward the polishing pad. ) spray on the polishing pad to remove foreign matter on the polishing pad.
過去之CMP裝置為了避免設於搖動臂前端部之漿液吐出噴嘴與配置於研磨墊上之霧化器發生干擾,需要將漿液吐出噴嘴配置於比霧化器高的高度位置。因而,使搖動臂搖動而且從漿液吐出噴嘴吐出漿液時,漿液之滴下位置容易發生位置偏差,要將研磨晶圓所需之漿液在最佳時機與位置滴下很困難。In order to avoid interference between the slurry discharge nozzle provided at the tip of the rocker arm and the atomizer arranged on the polishing pad in the conventional CMP apparatus, it was necessary to arrange the slurry discharge nozzle at a height higher than the atomizer. Therefore, when the rocker arm is swung and the slurry is discharged from the slurry discharge nozzle, the position where the slurry is dropped tends to be misaligned, and it is difficult to drop the slurry required for polishing the wafer at the optimum timing and position.
日本特開2018-6549號公報揭示有搖動臂可在水平方向延伸之水平軸周圍旋轉而構成,使漿液吐出噴嘴在將液滴下位置與退開位置之間移動時,藉由使搖動臂在水平軸周圍旋轉,而使漿液吐出噴嘴從霧化器退到上方的技術。Japanese Patent Application Laid-Open No. 2018-6549 discloses that the swing arm is rotatable around a horizontal axis extending in the horizontal direction. A technique in which the shaft rotates around, and the slurry discharge nozzle is retracted from the atomizer to the top.
(發明所欲解決之問題)(The problem that the invention intends to solve)
希望提供一種可降低研磨晶圓所需之漿液的滴下位置之位置偏差的液體供給裝置及研磨裝置。 (解決問題之手段)It is desired to provide a liquid supply device and a polishing device that can reduce the positional deviation of the drop position of the slurry required for polishing a wafer. (means to solve the problem)
本揭示一個樣態之液體供給裝置具備: 搖動臂,其係可在研磨台之上方水平地搖動; 漿液管,其係沿著前述搖動臂之長度方向而延伸,並從前端部之漿液吐出口吐出漿液至前述研磨台上;及 複數個噴射噴嘴,其係沿著前述搖動臂之長度方向並列設置,並在前述研磨台上噴射清洗流體; 前述漿液吐出口定位於前述搖動臂之前端部, 位於前述搖動臂之前端部的噴射噴嘴係以可清洗從前述漿液吐出口吐出之漿液在前述研磨台上的滴下位置之方式而傾斜設置。 本揭示一個樣態之研磨裝置,係具備液體供給裝置, 前述液體供給裝置具備: 搖動臂,其係可在研磨台之上方水平地搖動; 漿液管,其係沿著前述搖動臂之長度方向而延伸,並從前端部之漿液吐出口吐出漿液至前述研磨台上;及 複數個噴射噴嘴,其係沿著前述搖動臂之長度方向並列設置,並在前述研磨台上噴射清洗流體; 前述漿液吐出口定位於前述搖動臂之前端部, 位於前述搖動臂之前端部的噴射噴嘴係以可清洗從前述漿液吐出口吐出之漿液在前述研磨台上的滴下位置之方式而傾斜設置。The liquid supply device of one aspect of the present disclosure includes: A rocking arm, which can be rocked horizontally above the grinding table; A slurry pipe, which extends along the longitudinal direction of the rocking arm, and discharges the slurry from the slurry outlet at the front end to the grinding table; and a plurality of spray nozzles, which are arranged in parallel along the length direction of the rocking arm, and spray cleaning fluid on the grinding table; The slurry outlet is positioned at the front end of the rocking arm, The spray nozzles located at the front end of the swing arm are inclined so as to clean the drop position of the slurry discharged from the slurry discharge port on the grinding table. In one aspect of the present disclosure, a polishing device is provided with a liquid supply device, The aforementioned liquid supply device includes: A rocking arm, which can be rocked horizontally above the grinding table; A slurry pipe, which extends along the longitudinal direction of the rocking arm, and discharges the slurry from the slurry outlet at the front end to the grinding table; and a plurality of spray nozzles, which are arranged in parallel along the length direction of the rocking arm, and spray cleaning fluid on the grinding table; The slurry outlet is positioned at the front end of the rocking arm, The spray nozzles located at the front end of the swing arm are inclined so as to clean the drop position of the slurry discharged from the slurry discharge port on the grinding table.
實施形態之第一樣態的液體供給裝置具備: 搖動臂,其係可在研磨台之上方水平地搖動; 漿液管,其係沿著前述搖動臂之長度方向而延伸,並從前端部之漿液吐出口吐出漿液至前述研磨台上;及 複數個噴射噴嘴,其係沿著前述搖動臂之長度方向並列設置,並在前述研磨台上噴射清洗流體; 前述漿液吐出口定位於前述搖動臂之前端部, 位於前述搖動臂之前端部的噴射噴嘴係以可清洗從前述漿液吐出口吐出之漿液在前述研磨台上的滴下位置之方式而傾斜設置。The liquid supply device in the first state of the embodiment includes: A rocking arm, which can be rocked horizontally above the grinding table; A slurry pipe, which extends along the longitudinal direction of the rocking arm, and discharges the slurry from the slurry outlet at the front end to the grinding table; and a plurality of spray nozzles, which are arranged in parallel along the length direction of the rocking arm, and spray cleaning fluid on the grinding table; The slurry outlet is positioned at the front end of the rocking arm, The spray nozzles located at the front end of the swing arm are inclined so as to clean the drop position of the slurry discharged from the slurry discharge port on the grinding table.
採用此種樣態時,因為將漿液吐出口與噴射噴嘴配置於同一個搖動臂上,所以,即使降低漿液吐出口之高度位置,漿液吐出口仍不致與噴射噴嘴發生干擾。因此,可降低漿液吐出口之高度位置,藉此,縮短漿液從漿液吐出口吐出而到達研磨台上之距離及時間,使搖動臂搖動而且從漿液吐出口吐出漿液時,漿液之滴下位置不易發生位置偏差,而可在最佳時機與位置滴下研磨晶圓所需之漿液。此外,因為位於搖動臂前端部之噴射噴嘴係以可清洗從漿液吐出口吐出之漿液在研磨台上的滴下位置之方式而傾斜設置,所以,即使例如漿液從漿液吐出口而滴下研磨台的中心附近時,仍可在研磨台之中心附近噴射清洗流體來清洗,可降低殘留於研磨台上的微粒子。此外,藉由將噴射噴嘴與漿液吐出口配置於同一個搖動臂上,可謀求研磨裝置中之節省空間化。In this configuration, since the slurry discharge port and the spray nozzle are arranged on the same swing arm, even if the height of the slurry discharge port is lowered, the slurry discharge port will not interfere with the spray nozzle. Therefore, the height position of the slurry discharge port can be lowered, thereby shortening the distance and time for the slurry discharged from the slurry discharge port to reach the grinding table, and when the rocker arm is swayed and the slurry is discharged from the slurry discharge port, the drop position of the slurry is less likely to occur. The position deviation can be dropped, and the slurry required for polishing the wafer can be dropped at the best timing and position. In addition, since the spray nozzle at the tip of the swing arm is inclined so as to clean the drop position of the slurry discharged from the slurry discharge port on the grinding table, even if the slurry is dropped from the slurry discharge port to the center of the grinding table, for example, When it is near the center of the grinding table, the cleaning fluid can still be sprayed near the center of the grinding table, which can reduce the particles remaining on the grinding table. In addition, by arranging the jet nozzle and the slurry discharge port on the same swing arm, space saving in the polishing apparatus can be achieved.
實施形態之第二樣態的液體供給裝置如第一樣態之液體供給裝置, 其中前述漿液管之周圍係藉由用於防止在前述研磨台上濺起之液體侵入管與管之間而滯留的護蓋來覆蓋。The liquid supply device of the second aspect of the embodiment is the same as the liquid supply device of the first aspect, The periphery of the slurry pipe is covered by a cover for preventing the liquid splashed on the grinding table from invading between the pipes and staying there.
將漿液吐出口與噴射噴嘴配置於同一個搖動臂上時,不僅從漿液吐出口吐出而在研磨台上濺起的漿液,就連從噴射噴嘴噴霧而在研磨台上濺起的清洗流體也容易侵入漿液管與管之間而滯留,不過採用此種樣態時,因為漿液供給管之周圍藉由護蓋而覆蓋,所以可防止在研磨台上濺起之液體侵入管與管之間而滯留。When the slurry discharge port and the jet nozzle are arranged on the same swing arm, not only the slurry discharged from the slurry discharge port and splashed on the grinding table, but also the cleaning fluid sprayed from the jet nozzle and splashed on the grinding table can be easily It penetrates between the slurry tubes and stays there. However, in this state, since the slurry supply tube is covered with a cover, the liquid splashed on the grinding table can be prevented from invading between the tubes and staying between the tubes. .
實施形態之第三樣態的液體供給裝置如第二樣態之液體供給裝置, 其中前述護蓋具有與前述研磨台相對之下面,前述漿液管之前端部向下貫穿該下面而伸出該護蓋的外側。The liquid supply device of the third aspect of the embodiment is like the liquid supply device of the second aspect, The aforementioned protective cover has a lower surface opposite to the aforementioned grinding table, and the front end of the aforementioned slurry pipe penetrates downwardly through the lower surface and protrudes out of the outer side of the protective cover.
採用此種樣態時,漿液管之前端部周圍進一步無間隙地被護蓋,可更確實防止在研磨台上濺起之液體侵入管與管之間而滯留。In this state, the periphery of the front end of the slurry tube is further covered without a gap, so that the liquid splashed on the grinding table can be more reliably prevented from intruding between the tubes and staying there.
實施形態之第四樣態的液體供給裝置如第二或第三樣態之液體供給裝置, 其中在前述搖動臂之基端部設有護蓋清洗噴嘴,其係在前述護蓋上供給清洗液。The liquid supply device of the fourth aspect of the embodiment, such as the liquid supply device of the second or third aspect, The base end of the rocking arm is provided with a cover cleaning nozzle, which is connected to the cover to supply cleaning liquid.
採用此種樣態時,藉由從護蓋清洗噴嘴在護蓋上供給清洗液,可清洗護蓋。藉此,於晶圓研磨中,可防止附著於護蓋之微粒子落在研磨台上而污染晶圓。In this state, the cover can be cleaned by supplying the cleaning liquid to the cover from the cover cleaning nozzle. In this way, during wafer polishing, the particles adhering to the protective cover can be prevented from falling on the polishing table and contaminating the wafer.
實施形態之第五樣態的液體供給裝置如第四樣態之液體供給裝置, 其中前述護蓋清洗噴嘴具有:第一噴嘴,其係在前述護蓋之上面供給清洗液;第二噴嘴,其係在前述護蓋之右側面供給清洗液;及第三噴嘴,其係在前述護蓋之左側面供給清洗液。The liquid supply device of the fifth aspect of the embodiment is like the liquid supply device of the fourth aspect, The protective cover cleaning nozzle has: a first nozzle, which is connected to the upper surface of the protective cover to supply cleaning liquid; a second nozzle, which is connected to the right side of the protective cover to supply cleaning liquid; and a third nozzle, which is connected to the above-mentioned protective cover. The left side of the cover is supplied with cleaning fluid.
採用此種樣態時,因為可分別在護蓋之上面、右側面與左側面供給清洗液來清洗,所以即使在護蓋之上面、右側面、左側面附著的微粒子量及附著方式不同,仍可提高護蓋之清洗效率。In this state, since the cleaning solution can be supplied to the upper surface, right side and left side of the protective cover respectively for cleaning, even if the amount of particles adhering to the upper surface, the right side and the left side of the protective cover and the method of adhering are different, the It can improve the cleaning efficiency of the protective cover.
實施形態之第六樣態的液體供給裝置如第二至第五樣態中任何一個樣態之液體供給裝置, 其中在前述護蓋之內面,以朝向沿著前述搖動臂之表面爬行的前述漿液管而伸出之方式設有複數個肋。The liquid supply device of the sixth aspect of the embodiment is the liquid supply device of any one of the second to fifth aspects, A plurality of ribs are provided on the inner surface of the protective cover so as to protrude toward the slurry tube crawling along the surface of the rocking arm.
採用此種樣態時,在搖動臂上安裝護蓋時,因為設於護蓋內面之肋將漿液管壓至搖動臂側,所以可抑制、防止藉由對漿液管施加壓力,管浮起而與不接觸之護蓋內壁干擾,或是管上產生抖動、振盪的問題。藉此,不僅防止漿液管與護蓋內壁摩擦,還可抑制藉由漿液管浮起導致從漿液吐出口吐出之漿液脈動,漿液之滴下位置不穩定。此外,從搖動臂上拆卸護蓋時,因為解除藉由設於護蓋內面之肋壓住漿液管,所以與將漿液管在導管(Pipe)等中通過時比較,可輕易進行漿液管的更換作業。藉由形成使漿液管在搖動臂表面爬行,並護蓋其上而壓住搖動臂的構造,而分別組合漿液管與噴射噴嘴,可分別進行更換。再者,即使漿液管係複數條時,管更換及分開使用(不同種類之漿液及純水)的設定作業仍然容易。In this state, when the cover is attached to the rocker arm, the rib provided on the inner surface of the cover presses the slurry pipe to the side of the rocker arm, so that the pressure is applied to the slurry pipe and the pipe can be suppressed and prevented from floating. And the interference with the inner wall of the protective cover that is not in contact, or the problem of jitter and oscillation on the tube. Thereby, not only the friction between the slurry tube and the inner wall of the protective cover is prevented, but also the pulsation of the slurry discharged from the slurry discharge port due to the floating of the slurry tube can be suppressed, and the drop position of the slurry can be prevented from being unstable. In addition, when removing the cover from the rocker arm, since the pressure of the slurry pipe by the ribs provided on the inner surface of the cover is released, the slurry pipe can be easily removed compared to when the slurry pipe is passed through a pipe or the like. Replace the job. By forming a structure in which the slurry pipe crawls on the surface of the rocker arm and covers it to press the rocker arm, the slurry pipe and the spray nozzle can be combined and replaced separately. Furthermore, even when there are multiple slurry pipes, the pipe replacement and setting work for separate use (different types of slurries and pure water) are still easy.
實施形態之第七樣態的液體供給裝置如第一至第六樣態中任何一個樣態之液體供給裝置, 其中在前述搖動臂中,前述漿液吐出口配置於比前述噴射噴嘴靠近研磨對象物之側。亦即,漿液吐出口並未位於噴射噴嘴之並列的延長(比噴射噴嘴之並列延長,而位於偏向研磨對象物側)。又換言之,漿液吐出口係位於其位於搖動臂前端部的噴射噴嘴與研磨對象物之間。The liquid supply device of the seventh aspect of the embodiment is the liquid supply device of any one of the first to sixth aspects, In the above-mentioned swing arm, the above-mentioned slurry discharge port is arranged on the side closer to the grinding object than the above-mentioned jet nozzle. That is, the slurry discharge port is not located in an extension of the juxtaposition of the jet nozzles (is longer than the juxtaposition of the jet nozzles, and is located on the side of the polishing object). In other words, the slurry discharge port is located between the jet nozzle located at the tip of the swing arm and the object to be polished.
採用此種樣態時,可在更靠近研磨對象物之位置吐出漿液,可在更最佳時機與位置滴下研磨晶圓所需之漿液。In this state, the slurry can be ejected at a position closer to the object to be polished, and the slurry required for polishing the wafer can be dropped at a more optimal timing and position.
實施形態之第八樣態的液體供給裝置如第一至第七樣態中任何一個樣態之液體供給裝置, 其中前述搖動臂之驅動機構係由伺服馬達與減速機而構成。The liquid supply device of the eighth aspect of the embodiment is the liquid supply device of any one of the first to seventh aspects, The drive mechanism of the rocking arm is composed of a servo motor and a reducer.
實施形態之第九樣態的研磨裝置具備第一至第八樣態中任何一個樣態之液體供給裝置。The polishing apparatus of the ninth aspect of the embodiment includes the liquid supply device of any one of the first to eighth aspects.
以下,參照圖式說明實施形態之具體例。另外,以下之說明及以下說明使用之圖式,就可相同構成之部分使用相同符號,並且省略重複之說明。Hereinafter, a specific example of the embodiment will be described with reference to the drawings. In addition, in the following description and the drawings used for the following description, the same reference numerals may be used for the parts having the same configuration, and overlapping descriptions will be omitted.
圖1係顯示一種實施形態之研磨裝置10的概略構成俯視圖。FIG. 1 is a plan view showing a schematic configuration of a
如圖1所示,研磨裝置10具備:安裝有研磨墊(無圖示)之研磨台11;保持晶圓W且用於將晶圓W按壓於研磨台11上之研磨墊而且進行研磨的上方環形轉盤(研磨頭)12;用於進行研磨墊之修整的修整器13;及液體供給裝置20。As shown in FIG. 1 , the
其中,上方環形轉盤12支撐於上方環形轉盤頭14。在研磨台11之上面貼合有研磨墊(無圖示),該研磨墊之上面構成研磨晶圓W之研磨面。另外,亦可使用固定磨石來取代研磨墊。上方環形轉盤12及研磨台11係構成可在各個軸心周圍旋轉。晶圓W藉由真空吸附而保持於上方環形轉盤12的下面。研磨時,從液體供給裝置20供給研磨液(漿液)至研磨墊的研磨面,研磨對象之晶圓W藉由上方環形轉盤12按壓於研磨面而被研磨。The upper
圖2係放大顯示液體供給裝置20之立體圖,圖3係液體供給裝置20之縱剖面圖。FIG. 2 is an enlarged perspective view showing the
如圖1至圖3所示,液體供給裝置20具有:可在研磨台11之上方水平搖動的搖動臂21;從前端部之漿液吐出口22在研磨台11上吐出漿液之1個或複數個(圖5所示之例係4個)漿液管27;及在研磨台11上噴射清洗流體(液體(例如純水及脫離子水)、或液體與氣體(例如氮氣等不活潑氣體)之混合)的複數個(圖示之例係8個)噴射噴嘴231~238。As shown in FIGS. 1 to 3 , the
搖動臂21係以在研磨台11之上方水平延伸的方式而配置,在搖動臂21之基端部設有搖動手段26。搖動手段26具有:在鉛直方向延伸之搖動軸261;及設於搖動軸261之下端部的驅動機構262(例如伺服馬達及減速機)。搖動臂21之基端部固定於搖動軸261。搖動軸261利用從驅動機構262接受之動力可在鉛直之中心軸線周圍轉動,藉此搖動臂21在研磨台11之上方以搖動軸261為中心而水平搖動(回轉)。驅動機構262由伺服馬達與減速機構成時,由於伺服機構中可控制位置、速度等,因此搖動臂21之位置精度高且穩定化。因而,可利用晶圓之研磨量測量值實施反饋控制,並可依據所測量之研磨量,在需要研磨之位置以需要的漿液量精確滴下漿液。此時,利用晶圓之研磨量測量值實施的反饋控制,例如可利用依據本案申請人於日本特開2015-193068提出之渦電流式或光學式的膜厚感測器之測量值實施的研磨頭之壓力控制,並以附帶於其研磨頭之壓力控制,而將漿液供給至提高研磨頭之壓力的部分之方式進行搖動臂21的位置控制。伺服馬達用於精確定位,減速機用於增大轉矩。例如使用1/100之減速機時,因為馬達旋轉1周之移動量變成1/100,所以可使其進行更細微之動作。此時,亦可使用無齒隙之精密減速機。如後述,使漿液噴嘴與霧化器一體化之構造物的重量旋轉時需要大電容之馬達,不過,因為有減速機時可增大轉矩,所以可以小電容之馬達來驅動。The
此外,驅動機構262由伺服馬達與減速機構成情況下,藉由測量來自噴射噴嘴231~238之清洗液噴射時的反作用力作為伺服馬達負荷,可反饋噴射噴嘴231~238之吐出流量,不使用流量計而可控制流量。流量控制例如藉由調整圖3所示之控制閥23c(例如電動流量調整閥等)的開度來進行。因而,搖動臂21之每個移動角度(噴射噴嘴231~238之位置)可控制噴射噴嘴231~238之吐出流量,換言之亦可控制墊清洗位置與流量。此外,過去因為漿液吐出口22與噴射噴嘴231~238係在不同的手臂,且漿液管27本身之剛性低,所以無法進行適切之位置控制,而本實施形態因為將漿液吐出口22與噴射噴嘴231~238配置於同一個搖動臂21上,且搖動臂21之剛性比漿液管27高,所以,藉由利用伺服馬達可控制漿液及清洗液之吐出(噴射)開始位置、結束位置。In addition, when the
如圖1至圖3所示,漿液吐出口22定位於搖動臂21的前端部,複數個噴射噴嘴231~238沿著搖動臂21之長度方向而並列設置。此處所謂搖動臂21之前端部,只要是手臂的前端部即可,亦可係手臂之軸線的前端及其兩側面的其中一個。圖2、3之漿液吐出口22於手臂之前端部中,在面對研磨對象物的側面。各噴射噴嘴231~238配置於形成在搖動臂21底面的凹部內。各噴射噴嘴231~238具有縫隙狀之流體出口,並將清洗流體形成霧狀,而將該霧狀之清洗流體噴霧於研磨台11上。As shown in FIGS. 1 to 3 , the
如圖3所示,在搖動臂21之內部形成有液體流路23a,各噴射噴嘴231~238連通於液體流路23a。在液體流路23a之端部形成有液體供給入口23b。從液體供給入口23b供給之液體(例如純水)通過液體流路23a而供給至各噴射噴嘴231~238。藉由從各噴射噴嘴231~238噴射清洗流體,可清洗整個研磨台11。另外,圖3所示之例係1條液體流路23a分歧成複數條(此處係8條)噴射噴嘴231~238,不過並非限定於此者,亦可係複數條(此處係8條)之各個配管直接連接於各個不同的噴射噴嘴231~238,或是將幾個噴射噴嘴群組化而連接於各群組。此外,亦可各條或一條分歧,並以可調整個別噴嘴吐出之開啟(ON)或關閉(OFF)的方式,而在各噴射噴嘴231~238中設有閥門。此外,已說明液體流路23a並非只有1條,亦可有複數條,不過液體供給入口23b亦不限於圖3所示之位置,亦可在搖動臂21a或是搖動軸261,亦可通過搖動軸261內部,或是沿著其外部爬行。再者,亦可係對應於各噴射噴嘴或是群組化之幾個噴射噴嘴的組合之複數個。As shown in FIG. 3, the
此外,如圖3所示,複數個漿液管27沿著搖動臂21之長度方向而在搖動臂21的表面爬行,各漿液管27前端部之漿液吐出口22定位於搖動臂21的前端部。並從各個不同之漿液吐出口22吐出在各漿液管27中流動的液體(漿液或純水)。漿液管27之前端部(出口附近)藉由漿液管固定配件而固定於搖動臂21本體。藉由將漿液管27之前端部(出口附近)固定於剛性高的霧化器本體,可抑制漿液管27前端之漿液吐出口22偏差。此外,漿液管27之前端部藉由漿液管固定配件而固定,藉此可調整管前端之高度位置,再者,可從每條管之管前端的台面改變高度而保持住。此外,容易取代管之種類(考慮至材質、口徑的差異)及數量(目前記載為複數條(4條))。此外,漿液管27不限於搖動臂21之上面及側面,藉由沿著手臂表面爬行,且漿液管27之前端部藉由漿液管固定配件而固定於搖動臂21本體,容易變更平視觀看時之漿液吐出口22的位置關係。3, a plurality of
此外,藉由漿液管27之前端部(出口附近)藉由漿液管固定配件而固定於搖動臂21本體,可使漿液管27前端部之漿液吐出口22位於更下方。此外,因為可將漿液吐出口22距離研磨台11之高度配合噴射噴嘴231~238的高度,所以可將研磨台11至漿液吐出口22的高度從以往約100mm而改成接近30mm的程度。再者,藉由在搖動軸261中設置空氣汽缸或電動致動器,可在垂直方向移動位置,並可配合用途調整研磨台11與漿液吐出口22間之距離。In addition, by fixing the front end (near the outlet) of the
漿液管27亦可沿著支撐搖動臂21之搖動軸261的外周面(爬行)而配置。藉此,可更換漿液管27。以護蓋24覆蓋搖動軸261情況下,亦可將沿著搖動軸261而配置之漿液管27配置於該護蓋24的內側。此外,停止從漿液吐出口22吐出漿液時,為了抑制空氣進入漿液管27內,漿液管27亦可沿著搖動軸261先向上延伸,然後向下彎曲並下降後,沿著搖動臂21(爬行)而橫向延伸來設定。The
藉由將漿液吐出口22與噴射噴嘴231~238配置於同一個搖動臂21上,即使降低漿液吐出口22之高度位置,漿液吐出口22仍不致與噴射噴嘴231~238干擾。因此,可降低漿液吐出口22之高度位置,藉此,縮短漿液從漿液吐出口22吐出後到達研磨台11上的距離及時間,使搖動臂21搖動而且使漿液從漿液吐出口22吐出時,漿液之滴下位置不易發生位置偏差,並可在最佳時機與位置滴下研磨晶圓所需之漿液。By arranging the
如圖1所示,漿液吐出口22在搖動臂21中,係比噴射噴嘴231~238而配置於靠近研磨對象物(晶圓)W之側。亦即,漿液吐出口22並非位於噴射噴嘴231~238之並列的延長(而係位於比噴射噴嘴231~238之並列延長偏向研磨對象物(晶圓)W側)。又換言之,漿液吐出口22係位於其位於搖動臂21前端部之噴射噴嘴231與研磨對象物(晶圓)W之間。藉此,可在更接近研磨對象物(晶圓)W之位置吐出漿液,可在更最佳的時機與位置滴下研磨晶圓W所需之漿液。As shown in FIG. 1 , the
圖4係從前端側觀看搖動臂21之前視圖。圖5係從斜下方觀看搖動臂21前端部之圖。FIG. 4 is a front view of the
如圖4及圖5所示,位於搖動臂21前端部之噴射噴嘴231係以可清洗從漿液吐出口22吐出之漿液在研磨台11上的滴下位置之方式而傾斜設置。亦即,從搖動臂21之前端側觀看時,位於搖動臂21前端部之噴射噴嘴231係以其吐出方向之延長線對漿液吐出口22之吐出方向的延長線形成銳角之方式而傾斜設置。As shown in FIGS. 4 and 5 , the
參照圖1,例如,從漿液吐出口22在研磨台11之中心附近滴下漿液時,假設位於搖動臂21前端部之噴射噴嘴231垂直向下地設置時,有可能無法對殘留於研磨台11之中心附近的漿液充分噴射清洗流體來清洗。另外,容易殘留於中心附近之理由係因愈朝向研磨台之半徑方向中心,愈不易對漿液產生朝向研磨台外周之離心力。相對而言,本實施形態因為位於搖動臂21前端部之噴射噴嘴231係以可清洗從漿液吐出口22吐出之漿液的滴下位置之方式而傾斜設置,所以,即使從漿液吐出口22滴下漿液至研磨台11之中心附近時,仍可在研磨台11之中心附近充分噴射清洗流體來清洗,可減少殘留於研磨台11上之微粒子。噴射噴嘴231並非具有圓形之流體出口的噴嘴,而係具有縫隙狀之流體出口的噴霧噴嘴,關於研磨台11之中心應以接觸橫長之刷子的方式在研磨台11上滴下清洗液。此因,從圓形之漿液吐出口22滴下漿液時,研磨台11上之漿液描繪的圖形從滴下位置同心圓狀擴大,且藉由研磨台11之旋轉,其同心圓朝向旋轉方向外側而長圓形化。從圓形狀之流體出口滴下清洗液亦同。因此,圓形之漿液吐出口22與圓形狀的流體出口時,無論漿液吐出口22與圓形狀之流體出口怎麼靠近,漿液之擴大與清洗液的擴大,既然擴大中心彼此不同,重疊部分就會產生某種差異的部分。另外,噴射噴嘴231係具有縫隙狀之流體出口的噴射噴嘴時,既然噴霧之清洗液的形狀係刷子狀,即除去其該噴霧之清洗液淋到的部分之漿液。噴射噴嘴231係具有縫隙狀之流體出口的噴射噴嘴情況下,從上方觀看時,噴霧之清洗液的形狀應為不放在從研磨台11之中心至外周的半徑線上而若干傾斜。此時,隨著研磨台11旋轉,可輔助清洗液向外周流動,並可促進除去希望之漿液。1 , for example, when the slurry is dropped from the
如圖2至圖5所示,漿液管27之周圍藉由用於防止在研磨台11上濺起之液體侵入管27與管27之間而滯留的護蓋24來覆蓋。As shown in FIGS. 2 to 5 , the periphery of the
如本實施形態將漿液吐出口22與噴射噴嘴231~238配置於同一個搖動臂21上時,不僅從漿液吐出口22吐出而在研磨台11上濺起的漿液,就連從噴射噴嘴231~238噴霧而在研磨台11上濺起的清洗流體也容易侵入漿液供給管27與管27之間而滯留,不過,藉由護蓋24覆蓋漿液供給管27之周圍,可防止在研磨台11上濺起之液體侵入管27與管27之間而滯留。When the
如圖5所示,護蓋24具有與研磨台11相對之下面24b,漿液管27之前端部向下貫穿該下面24b,並伸出於護蓋24的外側。藉此,漿液管27前端部之周圍更無間隙地被護蓋,可更確實防止在研磨台11上濺起之液體侵入管27與管27之間而滯留。As shown in FIG. 5 , the
如圖3所示,在護蓋24之內面,以朝向漿液供給管27而伸出之方式設有複數個(圖示之例係3個)肋24a。在搖動臂21上安裝護蓋24時,因為設於護蓋24內面之肋24a將漿液管27按壓於搖動臂21側,所以,可抑制、防止藉由對漿液管27施加壓力造成管27浮起,而與不接觸之護蓋24內壁干擾,或是管27上產生抖動、振盪的問題。藉此,不僅防止漿液管27與護蓋24內壁摩擦,還可抑制藉由漿液管27浮起導致從漿液吐出口22吐出之漿液脈動,漿液之滴下位置不穩定。As shown in FIG. 3 , a plurality of (three in the illustrated example)
圖3所示之例的肋24a數量係3支,不過並非限於3支者,亦可係1~2支,亦可係4支以上。亦可護蓋24與肋24a係一體,亦可兩者分開。此外,一種修改例亦可將肋24a設於搖動臂21之本體,在搖動臂21上安裝護蓋24時,設於搖動臂21本體之肋24a將漿液管27按壓於護蓋24的內壁側,且沿著護蓋24的內壁。即使採用此種樣態,仍可獲得與將肋24a設於護蓋24內面之樣態同樣的作用效果。In the example shown in FIG. 3, the number of
此外,從搖動臂21上拆卸護蓋24時,因為解除藉由設於護蓋24內面之肋24a壓住漿液管27,所以與將漿液管27在導管等中通過時比較,可輕易進行漿液管的更換作業。此外,藉由形成使漿液管27在搖動臂21表面爬行,並藉由護蓋24其上而壓住搖動臂21的構造,而分別組合漿液管27與噴射噴嘴231~238,可分別進行更換。再者,即使漿液管27係複數條時,管更換及分開使用(不同種類之漿液及純水)的設定作業仍然容易。In addition, when removing the
如圖2至圖4所示,在搖動臂21之基端部設有在護蓋24上供給清洗液(例如純水)的護蓋清洗噴嘴25。如圖2所示,護蓋清洗噴嘴25與形成於搖動臂21內部之液體流路23a連通。因此,從液體供給入口23b供給之液體(例如純水)通過液體流路23a而供給至各霧化器噴嘴231~238,並且亦供給至護蓋清洗噴嘴25。藉此,在研磨晶圓W後,從各霧化器噴嘴231~238將霧狀之清洗流體(液體、或液體與氣體的混合)噴霧至研磨台11上來清洗研磨台11時,可從護蓋清洗噴嘴25在護蓋24上供給清洗液,同時進行護蓋24之清洗。另外,亦可構成對護蓋清洗噴嘴25之供給配管與對噴射噴嘴231~238的供給配管係不同之供給配管,並控制各個的吐出,必要時可同時吐出。護蓋24之上面亦可半圓錐狀(剖面圓弧狀)的曲面形狀。護蓋清洗噴嘴25亦可係噴灑(Spray)噴嘴。As shown in FIGS. 2 to 4 , a
本實施形態如圖2及圖4所示,護蓋清洗噴嘴25具有:在護蓋24之上面供給清洗液的第一噴嘴251;在護蓋24之右側面供給清洗液的第二噴嘴252;及在護蓋24之左側面供給清洗液的第三噴嘴253。藉此,可在護蓋24之上面、右側面與左側面分別供給清洗液來清洗,即使護蓋之上面、右側面與左側面所附著的微粒子量及附著方式不同,仍可提高護蓋24之清洗效率。第一~第三噴嘴251~253分別係噴灑噴嘴,亦可從第一~第三噴嘴251~253噴霧之清洗液(噴灑)的擴大可從護蓋24的基部覆蓋至前端部。另外,只要是可達成以清洗液從護蓋24之基部覆蓋至前端部的噴嘴即可,第一~第三噴嘴251~253並非限定於噴灑噴嘴者。第一~第三噴嘴251~253亦可分別對護蓋24之方向為可變。第一~第三噴嘴251~253係噴灑噴嘴情況下,第一~第三噴嘴251~253亦可在各個軸中心旋轉噴灑的方向。第一~第三噴嘴251~253之流量亦可彼此不同及/或可變。此時,可將希望流量之清洗液集中噴灑到護蓋24表面之附著物附著程度高的部分。In this embodiment, as shown in FIGS. 2 and 4 , the
其次,說明如上述構成之研磨裝置10的動作之一例。Next, an example of the operation of the polishing
首先,在研磨晶圓W時,如圖1所示,在可從漿液吐出口22滴下漿液至研磨台11之中心附近的方式定位搖動臂21之狀態下,從漿液吐出口22吐出漿液至研磨台11上,並且藉由上方環形轉盤12將研磨對象之晶圓W按壓於研磨台11上來研磨。First, when polishing the wafer W, as shown in FIG. 1 , the
本實施形態因為漿液吐出口22與噴射噴嘴231~238係配置於同一個搖動臂21上,所以可降低漿液吐出口22之高度位置,藉此,縮短漿液從漿液吐出口22吐出而到達研磨台11上的距離及時間,使搖動臂21搖動而且使漿液從漿液吐出口22吐出時,漿液之滴下位置不易位置偏差,可在最佳時機與位置滴下研磨晶圓所需之漿液。In this embodiment, since the
研磨晶圓W後,停止從漿液吐出口22吐出漿液,如圖1所示,在可從各噴射噴嘴231~238噴射清洗流體至研磨台11之全面的方式定位搖動臂21之狀態下,從液體供給入口23b供給之液體(例如純水)通過液體流路23a而供給至各噴射噴嘴231~238及護蓋清洗噴嘴25,從各噴射噴嘴231~238將霧狀之清洗流體噴霧至研磨台11上,進行研磨台11的清洗,並且從護蓋清洗噴嘴25供給清洗液至護蓋24上,進行護蓋24之清洗。亦可使搖動臂21搖動,來控制從各噴射噴嘴231~238噴射之清洗流體的噴射位置。從各霧化器噴射噴嘴231~238及護蓋清洗噴嘴25噴射清洗流體進行至開始研磨下一個晶圓W之前(修整作業結束前)。After polishing the wafer W, the slurry ejection from the
本實施形態如圖4所示,因為位於搖動臂21前端部之噴射噴嘴231係以可清洗從漿液吐出口22吐出之漿液在研磨台11上的滴下位置之方式而傾斜設置,所以,即使從漿液吐出口22滴下漿液至研磨台11的中心附近時,仍可在研磨台11之中心附近充分噴射清洗流體來清洗,可減少殘留於研磨台11上之微粒子。微粒子為附著於晶圓表面之瑕疵(defect)的原因,因此,藉由漿液之排出性提高,晶圓之瑕疵減少效果提高。In this embodiment, as shown in FIG. 4 , since the
再者,如先前技術所述,過去之CMP裝置為了避免設於搖動臂前端部之漿液吐出噴嘴與配置於研磨墊上之霧化器發生干擾,需要將漿液吐出噴嘴配置於比霧化器高的高度位置。因而,使搖動臂搖動而且從漿液吐出噴嘴吐出漿液時,漿液之滴下位置容易發生位置偏差,要將研磨晶圓所需之漿液在最佳時機與位置滴下很困難。Furthermore, as described in the prior art, in order to avoid interference between the slurry ejection nozzle provided at the tip of the rocker arm and the atomizer arranged on the polishing pad, the conventional CMP apparatus had to arrange the slurry ejection nozzle at a height higher than the atomizer. altitude position. Therefore, when the rocker arm is swung and the slurry is discharged from the slurry discharge nozzle, the position where the slurry is dropped tends to be misaligned, and it is difficult to drop the slurry required for polishing the wafer at the optimum timing and position.
相對而言,採用本實施形態時,因為將漿液吐出口22與噴射噴嘴231~238配置於同一個搖動臂21上,所以即使降低漿液吐出口22之高度位置,漿液吐出口22仍不致與噴射噴嘴干擾。因此,可降低漿液吐出口22之高度位置,藉此,縮短漿液從漿液吐出口22吐出而到達研磨台11上的距離及時間,使搖動臂21搖動而且使漿液從漿液吐出口22吐出時,漿液之滴下位置不易位置偏差,可在最佳時機與位置滴下研磨晶圓W所需的漿液。In contrast, in the present embodiment, since the
此外,採用本實施形態時,因為位於搖動臂21前端部之噴射噴嘴231係以可清洗從漿液吐出口22吐出之漿液在研磨台11上的滴下位置之方式而傾斜設置,所以,例如,即使從漿液吐出口22滴下漿液至研磨台11的中心附近時,仍可在研磨台11之中心附近噴射清洗流體來清洗,並可減少殘留於研磨台11上之微粒子。In addition, in the present embodiment, since the
此外,採用本實施形態時,藉由將噴射噴嘴231~238與漿液吐出口22配置於同一個搖動臂21上,可謀求研磨裝置內之節省空間化。此外,藉由將噴射噴嘴231~238與漿液吐出口22配置於同一個搖動臂21上,使漿液吐出口22從研磨台11之台面退開時,亦可一併清洗噴射噴嘴231~238。In addition, according to this embodiment, by arranging the
此外,將漿液吐出口22與噴射噴嘴231~238配置於同一個搖動臂21上時,不僅從漿液吐出口22吐出而在研磨台11上濺起之漿液,就連從噴射噴嘴231噴霧而在研磨台11上濺起的清洗流體也容易侵入漿液供給管27與管27之間而滯留,不過,採用本實施形態時,藉由護蓋24覆蓋漿液供給管27之周圍,可防止在研磨台11上濺起之液體侵入管27與管27之間而滯留。In addition, when the
此外,採用本實施形態時,因為護蓋24具有與研磨台11相對之下面24b,漿液管27之前端部向下貫穿該下面24b,並伸出於護蓋24的外側,所以漿液管27前端部之周圍更無間隙地被護蓋,可更確實防止在研磨台11上濺起之液體侵入管27與管27之間而滯留。In addition, in the present embodiment, since the
此外,採用本實施形態時,在搖動臂21之基端部設有護蓋清洗噴嘴25,藉由從護蓋清洗噴嘴25供給清洗液於護蓋24上可清洗護蓋24。藉此,在研磨晶圓W中,可防止附著於護蓋24之微粒子落在研磨台11上而污染晶圓W。In addition, in the present embodiment, the
此外,採用本實施形態時,因為在護蓋24之內面,以朝向沿著搖動臂21之長度方向而延伸之漿液管27而伸出的方式設有複數個肋24a,所以抑制、防止在搖動臂21上安裝護蓋24時,設於護蓋24內面之肋24a將漿液管27按壓於搖動臂21側,藉由對漿液管27施加壓力,管27浮起而與不接觸之護蓋24內壁干擾,或是在漿液管27上產生抖動、振盪的問題。藉此,可抑制藉由漿液管27浮起造成從漿液吐出口22吐出之漿液脈動,導致漿液之滴下位置不穩定。此外,從搖動臂21上拆卸護蓋24時,因為解除藉由設於護蓋24內面之肋24a壓住漿液管27,所以與將漿液管27在導管等中通過時比較,可輕易進行漿液管27的更換作業。In addition, according to the present embodiment, since a plurality of
此外,採用本實施形態時,因為在搖動臂21中,將漿液吐出口22配置於比噴射噴嘴231~238接近晶圓W側,可在更接近晶圓W之位置吐出漿液,可在更最佳時機與位置滴下研磨晶圓W所需的漿液。In addition, according to the present embodiment, since the
此外,採用本實施形態時,因為將漿液管27固定於霧化器本體(亦即搖動臂21),所以剛性提高,漿液管27前端部之振動變小。此外,作為比較例而考慮將漿液管27傾斜地,或是遠離研磨台而配置,並在研磨台中央吐出漿液的構成時,該比較例之構成會有藉由漿液之流速變化而滴下位置容易振動的問題,不過本實施形態係在搖動臂21中,將漿液吐出口22配置於比噴射噴嘴231~238接近晶圓W側,因為該漿液吐出口22係垂直向下,所以漿液滴下位置之位置控制容易。此外,噴射噴嘴231~238之噴射位置計算,關於該垂直向下滴下方面,因為保持與漿液吐出口22之相對位置關係,所以只須以通過與漿液吐出口22相同軌跡之方式來控制即可。In addition, according to this embodiment, since the
圖6係顯示研磨裝置10之一部分的縱剖面圖,圖7係研磨裝置10之系統構成圖。如圖6所示,研磨裝置10之研磨台11與配置於其下方之馬達50連結,並如箭頭所示,可在其軸心周圍旋轉。此外,在研磨台11之上面貼設有具有研磨面52a之研磨墊(研磨布)52。此外,上方環形轉盤12連結於上方環形轉盤軸桿54,在上方環形轉盤12之下部外周部設有保持半導體晶圓W之外周緣的扣環56。FIG. 6 is a longitudinal sectional view showing a part of the polishing
上方環形轉盤12連結於馬達(無圖示),並且連結於升降汽缸(無圖示)。藉此,上方環形轉盤12如箭頭所示可升降且可在其軸心周圍旋轉,而可將半導體晶圓W對研磨墊52之研磨面52a以任何壓力按壓。The upper
在研磨台11之內部埋設有作為測量形成於半導體晶圓W表面之銅膜等金屬薄膜的膜厚之作為膜厚監視器的渦電流感測器58。來自渦電流感測器(膜厚監視器)58之配線60通過研磨台11及支撐軸62中,並經由設於支撐軸62之軸端的旋轉連接器(或是集電環)64而連接於控制器66。該渦電流感測器58通過半導體晶圓W之下方時,可在通過軌跡上連續地測量形成於半導體晶圓W表面之銅膜等導電膜的膜厚。控制器66亦可係其控制對象與設置場所在研磨模組內,且係關於研磨模組內之作業的研磨模組內的控制器,或是關於包含至清洗、乾燥裝置之整個研磨裝置的作業之研磨裝置的控制器。又此外,控制器66亦可配置於研磨裝置之清洗、乾燥模組內。再者,亦可配置於設置基板處理系統之工廠內的機架外側。再者,控制器66係由複數個電腦構成,上述複數個電腦亦可分散配置於工廠內。換言之,構成控制器66之至少1台電腦亦可配置於清洗、乾燥模組內、清洗、乾燥模組附近、或是從清洗、乾燥模組離開之基板處理系統內。再者,亦可在半導體基板製造工廠內之複數個基板處理系統的1條生產線上配置構成控制器66之至少1台電腦。再者,構成控制器66之複數個電腦亦可配置於複數個基板處理系統之複數條生產線上。再者,構成控制器66之至少1台電腦亦可配置於工廠內之生產線控制、監視場所、及生產線控制、監視系統內。再者,亦可配置於半導體基板製造企業之複數個工廠監視場所及工廠監視系統內,或是CMP裝置製造、設置企業內。An
另外,本例係使用渦電流感測器測量形成於半導體晶圓表面之銅膜等金屬薄膜的膜厚,不過,亦可取代渦電流感測器而使用光學式感測器,在研磨中測量設於半導體晶圓表面之氧化膜薄膜等光學性透明的薄膜之膜厚。In addition, in this example, an eddy current sensor is used to measure the film thickness of a metal thin film such as a copper film formed on the surface of a semiconductor wafer, but an optical sensor may be used instead of the eddy current sensor to measure during polishing The thickness of optically transparent thin films such as oxide films formed on the surface of semiconductor wafers.
亦可具備測量半導體晶圓表面之研磨後輪廓的研磨輪廓監視器,並將該研磨輪廓監視器之測量結果輸入模擬器72,作為實際研磨輪廓,不過無圖示。A polishing profile monitor for measuring the polished profile of the surface of the semiconductor wafer may also be provided, and the measurement result of the polishing profile monitor is input to the
如圖7所示,搖動臂21隨著作為驅動機構之伺服馬達262的旋轉,而在研磨面52a之上方沿著水平面搖動,並隨著該搖動臂21之搖動,朝向前端下方之漿液吐出口22、換言之研磨液供給位置沿著研磨面52a之概略半徑方向而移動。伺服馬達(驅動機構)262連接於控制器66。As shown in FIG. 7 , the
控制器66連接有:搖動臂21之漿液吐出口(研磨液供給位置)22;及預測與在該研磨液供給位置將研磨液供給至研磨面52a,而且進行研磨時之研磨輪廓的關係,例如依據希望之研磨輪廓進行模擬的模擬器72。The
記憶於模擬器72之資料庫由沿著搖動臂21之漿液吐出口22的圖7所示之圓弧延長線的位置之複數個研磨液供給位置:α(°);與沿著在該研磨液供給位置供給研磨液而且進行半導體晶圓W之研磨時該半導體晶圓W的圖7所示之半徑γ的晶圓位置:γ(mm)之各交點的研磨率:RR(α, γ)(nm/min)而構成。從該資料庫之各研磨液供給位置:α中的研磨率:RR(α, γ),例如對應於研磨液供給位置α=60(°)之研磨率:RR(60, γ),判斷從各研磨液供給位置:α供給研磨液而且進行一定時間研磨時的研磨輪廓。換言之,在該資料庫中,研磨率亦表示繼續一定時間進行研磨時之研磨輪廓。The database stored in the
在如此構成之研磨裝置10中,使半導體晶圓W保持於上方環形轉盤12之下面,並藉由升降汽缸將半導體晶圓W按壓於旋轉之研磨台11上面的研磨墊52。而後,藉由使搖動臂21搖動,而且從漿液吐出口22供給研磨液Q至研磨墊52上,在半導體晶圓W的被研磨面(下面)與研磨墊52之間存在研磨液Q的狀態下進行半導體晶圓W表面之研磨。該研磨時,藉由控制器66控制伺服馬達262而且使搖動臂21搖動,使從漿液吐出口22供給之研磨液Q的供給位置(研磨液供給位置)沿著指定的移動圖案而移動。該研磨液供給位置之移動圖案由模擬器72預測,並輸入控制器66作決定。In the polishing
其次,參照圖8、圖9A及圖9B說明藉由模擬器72預測研磨液供給位置,亦即搖動臂21之漿液吐出口22的移動圖案。8 , 9A and 9B , the prediction of the polishing liquid supply position by the
首先,模擬器72讀取搖動臂21之可搖動範圍,換言之,圖9B所示之漿液吐出口(研磨液供給位置)22的活動範圍A、最小及最多速度變化點數、及速度變化時之加減速度等的計算參數(步驟1)。First, the
其次,模擬器72從過去資料及之前的資料等讀取搖動臂21之研磨液供給位置與實際研磨輪廓的關係作為時驗資料(步驟2)。參照顯示該時驗資料要求之搖動臂21的複數點之研磨液供給位置與研磨率(研磨輪廓)的關係之資料庫,必要時藉由N次回歸、傅里葉轉換、樣條回歸及小波轉換之至少一種方法,預測任意研磨液供給位置與研磨率(研磨輪廓)之關係並記憶(步驟3)。Next, the
另外,直接或從研磨裝置(CMP)將研磨後之希望研磨輪廓輸入模擬器70(步驟4)。In addition, the desired polishing profile after polishing is input into the
其次,例如設置圖9B所示之研磨液開始供給位置S、研磨液供給返回位置R、速度變化位置P1~P4、及各速度變化位置之間S~P1、P1~P2、P2~P3、P3~P4、P4~R的漿液吐出口之移動速度V1~V5等研磨液供給位置的移動圖案之計算初始值(步驟5)。再者,設定最大重複次數、容許輪廓誤差(希望之輪廓與預想輪廓的誤差)等之計算時的限制(步驟6)。Next, for example, as shown in FIG. 9B, the polishing liquid supply start position S, the polishing liquid supply return position R, the speed changing positions P1 to P4, and the positions S to P1, P1 to P2, P2 to P3, and P3 between the speed changing positions are set. Calculate the initial value of the movement pattern of the polishing liquid supply position, such as the moving speeds V1 to V5 of the slurry discharge ports of to P4 and P4 to R (step 5). Furthermore, the maximum number of repetitions, the allowable contour error (error between the desired contour and the expected contour), etc., are set as the limits at the time of calculation (step 6).
經過以上各步驟,模擬器70參照資料庫求出以假設之研磨液供給位置移動圖案使研磨液供給位置移動而且進行研磨時的研磨輪廓(研磨率)(步驟7)。After each of the above steps, the
而後,計算希望之研磨輪廓與步驟7之計算求出的研磨輪廓之差(步驟8),判斷該差是否在步驟6所設定之容許輪廓誤差的範圍內,或是到達最大重複數(步驟9)。Then, calculate the difference between the desired grinding profile and the grinding profile obtained by the calculation in step 7 (step 8), and judge whether the difference is within the allowable profile error range set in step 6, or reaches the maximum number of repetitions (step 9). ).
而後,當希望之研磨輪廓與計算求出的研磨輪廓之差不在容許輪廓誤差範圍內時,為了再計算假設之研磨液供給位置移動圖案而返回步驟7(步驟10)。而後,重複該步驟,當希望之研磨輪廓與計算求出的研磨輪廓之差在容許輪廓誤差的範圍內時,或是即使希望之研磨輪廓與計算求出的研磨輪廓之差不在容許輪廓誤差範圍內,但是已到達步驟6所設定之最大重複數時,顯示成為步驟7所計算之研磨輪廓的研磨液供給位置之移動圖案且儲存,並輸入控制器66(步驟11)。Then, when the difference between the desired polishing profile and the calculated polishing profile is not within the allowable profile error range, the process returns to step 7 (step 10 ) in order to recalculate the assumed polishing liquid supply position movement pattern. Then, repeat this step until the difference between the desired grinding profile and the calculated grinding profile is within the allowable profile error range, or even if the difference between the desired grinding profile and the calculated grinding profile is not within the allowable profile error range However, when the maximum number of repetitions set in step 6 has been reached, the moving pattern of the polishing liquid supply position that becomes the polishing profile calculated in step 7 is displayed, stored, and input to the controller 66 (step 11).
控制器66接受來自模擬器70之輸入,以搖動臂21之漿液吐出口22沿著研磨中的研磨液供給位置之移動圖案而移動的方式,控制作為移動機構之伺服馬達262而使搖動臂21搖動。The
本例係在半導體晶圓之研磨中,藉由渦電流感測器58取得形成於半導體晶圓表面之銅膜等金屬薄膜的膜厚分布(研磨輪廓),並輸入模擬器72。藉由模擬器72瞬間比較在圖8之步驟4所輸入的希望之研磨輪廓與研磨中藉由渦電流感測器58所取得的膜厚分布(研磨輪廓)而求差,為了作為希望之研磨輪廓而進行必要研磨條件的模擬。並依據藉由模擬所獲得之研磨條件,以變成希望之輪廓的方式,更新搖動臂21之搖動圖案,換言之漿液吐出口(研磨液供給位置)22之移動圖案。In this example, during polishing of a semiconductor wafer, the
如此控制搖動臂21之搖動圖案,以形成於研磨後之半導體晶圓表面的銅膜等金屬薄膜之膜厚分布(研磨輪廓)成為希望的輪廓之方式進行希望的研磨,並使研磨完成。The swing pattern of the
另外,上述實施形態係基於朝向研磨台11吹送清洗流體(液體或氣體與液體之混合流體),來除去研磨台11上之異物的目的而利用噴射噴嘴231~238,不過並非限定於此者,亦可基於朝向研磨台11吹送溫度調整後之液體來調節研磨台11的表面溫度之目的而利用噴射噴嘴231~238。In the above-described embodiment, the
以上說明了本技術適合之實施形態,不過本技術不限定於上述實施形態,在其技術性思想之範圍內當然可以各種不同形態來實施。The preferred embodiments of the present technology have been described above. However, the present technology is not limited to the above-described embodiments, and can of course be implemented in various forms within the scope of the technical idea.
10:研磨裝置
11:研磨台
12:上方環形轉盤
13:修整器
14:上方環形轉盤頭
20:液體供給裝置
21:搖動臂
22:漿液吐出口
23a:液體流路
23b:液體供給入口
23c:控制閥
231~238:噴射噴嘴
24:護蓋
24a:肋
24b:下面
25:護蓋清洗噴嘴
251:第一噴嘴
252:第二噴嘴
253:第三噴嘴
26:搖動手段
261:搖動軸
262:伺服馬達
27:漿液管
50:馬達
52:研磨墊
52a:研磨面
54:上方環形轉盤軸桿
56:扣環
58:渦電流感測器
60:配線
62:支撐軸
64:旋轉連接器
66:控制器
70,72:模擬器
P1~P4:速度變化位置
Q:研磨液
R:研磨液供給返回位置
S:研磨液開始供給位置
V1~V5:移動速度
W:晶圓10: Grinding device
11: Grinding table
12: The upper ring turntable
13: Dresser
14: Upper ring turntable head
20: Liquid supply device
21: rocker arm
22:
圖1係顯示一種實施形態之研磨裝置的概略構成俯視圖。 圖2係放大顯示圖1所示之研磨裝置具備的液體供給裝置之立體圖。 圖3係圖2所示之液體供給裝置的縱剖面圖。 圖4係從前端側觀看圖2所示之液體供給裝置的搖動臂之前視圖。 圖5係從斜下方觀看圖2所示之液體供給裝置的搖動臂前端部之圖。 圖6係顯示圖1所示之研磨裝置的概要之縱剖面圖。 圖7係圖6所示之研磨裝置的系統構成圖。 圖8係藉由模擬器模擬之預想流程圖。 圖9A係顯示藉由模擬器模擬之研磨面、搖動臂及漿液吐出口(研磨液供給位置)的關係之俯視圖。 圖9B係顯示藉由模擬器模擬之研磨面、搖動臂及漿液吐出口(研磨液供給位置)的關係之前視圖。FIG. 1 is a plan view showing a schematic configuration of a polishing apparatus according to an embodiment. FIG. 2 is an enlarged perspective view showing a liquid supply device included in the polishing apparatus shown in FIG. 1 . FIG. 3 is a longitudinal sectional view of the liquid supply device shown in FIG. 2 . Fig. 4 is a front view of the swing arm of the liquid supply device shown in Fig. 2 viewed from the front end side. Fig. 5 is a view of the front end portion of the rocker arm of the liquid supply device shown in Fig. 2 viewed obliquely from below. FIG. 6 is a longitudinal sectional view showing the outline of the polishing apparatus shown in FIG. 1 . FIG. 7 is a system configuration diagram of the polishing apparatus shown in FIG. 6 . Figure 8 is an envisioned flow chart simulated by a simulator. 9A is a plan view showing the relationship between the polishing surface, the swing arm, and the slurry discharge port (polishing liquid supply position) simulated by the simulator. 9B is a front view showing the relationship between the polishing surface, the rocking arm, and the slurry discharge port (polishing liquid supply position) simulated by the simulator.
10:研磨裝置 10: Grinding device
11:研磨台 11: Grinding table
13:修整器 13: Dresser
14:上方環形轉盤頭 14: Upper ring turntable head
20:液體供給裝置 20: Liquid supply device
21:搖動臂 21: rocker arm
22:漿液吐出口 22: Slurry spit outlet
231~238:噴射噴嘴 231~238: jet nozzle
58:渦電流感測器 58: Eddy current sensor
W:晶圓 W: Wafer
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JP2020-116200 | 2020-07-06 |
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CN114843212A (en) * | 2022-04-29 | 2022-08-02 | 浙江晶睿电子科技有限公司 | Multifunctional semiconductor cavity type processing equipment |
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US6139406A (en) * | 1997-06-24 | 2000-10-31 | Applied Materials, Inc. | Combined slurry dispenser and rinse arm and method of operation |
KR100443770B1 (en) * | 2001-03-26 | 2004-08-09 | 삼성전자주식회사 | Method and apparatus for polishing a substrate |
JP6031426B2 (en) * | 2012-11-02 | 2016-11-24 | 株式会社荏原製作所 | Polishing apparatus and polishing method |
TWI549779B (en) * | 2014-01-02 | 2016-09-21 | A slurry transfer device for chemical mechanical grinding |
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CN114843212A (en) * | 2022-04-29 | 2022-08-02 | 浙江晶睿电子科技有限公司 | Multifunctional semiconductor cavity type processing equipment |
CN114843212B (en) * | 2022-04-29 | 2023-01-24 | 浙江晶睿电子科技有限公司 | Multifunctional semiconductor cavity type processing equipment |
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