TW202205556A - 半導體封裝 - Google Patents
半導體封裝 Download PDFInfo
- Publication number
- TW202205556A TW202205556A TW110108629A TW110108629A TW202205556A TW 202205556 A TW202205556 A TW 202205556A TW 110108629 A TW110108629 A TW 110108629A TW 110108629 A TW110108629 A TW 110108629A TW 202205556 A TW202205556 A TW 202205556A
- Authority
- TW
- Taiwan
- Prior art keywords
- lower substrate
- semiconductor
- central portion
- semiconductor wafer
- wafer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 163
- 239000000758 substrate Substances 0.000 claims abstract description 175
- 235000012431 wafers Nutrition 0.000 claims description 127
- 239000010949 copper Substances 0.000 description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
- 239000004020 conductor Substances 0.000 description 18
- 239000010931 gold Substances 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 230000002787 reinforcement Effects 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052797 bismuth Inorganic materials 0.000 description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 238000010329 laser etching Methods 0.000 description 5
- 230000003014 reinforcing effect Effects 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000003351 stiffener Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5383—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
- H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/26175—Flow barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3205—Shape
- H01L2224/32052—Shape in top view
- H01L2224/32054—Shape in top view being rectangular or square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3205—Shape
- H01L2224/32057—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3205—Shape
- H01L2224/32057—Shape in side view
- H01L2224/32058—Shape in side view being non uniform along the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3205—Shape
- H01L2224/32057—Shape in side view
- H01L2224/32059—Shape in side view comprising protrusions or indentations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/8393—Reshaping
- H01L2224/83935—Reshaping by heating means, e.g. reflowing
- H01L2224/83939—Reshaping by heating means, e.g. reflowing using a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0652—Bump or bump-like direct electrical connections from substrate to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06565—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having the same size and there being no auxiliary carrier between the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
- H01L2225/06586—Housing with external bump or bump-like connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
本發明揭露一種半導體封裝,包括:下部基板,包含導電線;第一半導體晶片,在下部基板上;底部填充層,在第一半導體晶片與下部基板之間,底部填充層包含第一半導體晶片下方的中心部分,及在平行於下部基板的頂表面的第一方向上與中心部分隔離而不直接接觸的邊緣部分;以及凹陷區,在中心部分與邊緣部分之間。凹陷區可由中心部分的側壁、邊緣部分的側壁以及下部基板中的導電線的頂表面限定。
Description
本發明概念是關於一種半導體封裝,且更特定言之,是關於一種包含底部填充層的半導體封裝以及一種製造所述半導體封裝的方法。
相關申請案的交叉參考
此美國非臨時申請案根據35 U.S.C. § 119主張2020年7月15日在韓國智慧財產局申請的韓國專利申請案第10-2020-0087560號的優先權,所述韓國專利申請案的揭露內容特此以全文引用的方式併入本文中。
半導體封裝可包含於積體電路晶片上以用於電子產品中。典型地,半導體封裝經組態以使得半導體晶片安裝於印刷電路板(printed circuit board;PCB)上,且接線及/或凸塊用以將半導體晶片電連接至印刷電路板。隨著電子行業的新近發展,半導體封裝經廣泛開發以達成大小緊密、重量較小以及/或製造成本較低的目標。另外,諸如大容量海量儲存裝置的許多類型的半導體封裝隨著其應用領域的擴展而出現。
本發明概念的一些實例實施例提供一種具有增加的可靠性的半導體封裝。
根據本發明概念的一些實例實施例,一種半導體封裝可包括:下部基板,包含導電線;第一半導體晶片,在下部基板上;底部填充層,在第一半導體晶片與下部基板之間,底部填充層包含第一半導體晶片下方的中心部分,及在平行於下部基板的頂表面的第一方向上與中心部分隔離而不直接接觸的邊緣部分;以及凹陷區,在中心部分與邊緣部分之間,凹陷區可由中心部分的側壁、邊緣部分的側壁以及導電線的頂表面限定。
根據本發明概念的一些實例實施例,一種半導體封裝可包括:下部基板,包含導電線;第一半導體晶片,在下部基板上;底部填充層,在第一半導體晶片與下部基板之間,底部填充層包含第一半導體晶片下方的中心部分,及在平行於下部基板的頂表面的第一方向上與中心部分隔離而不直接接觸的邊緣部分;以及凹陷區,在中心部分與邊緣部分之間。凹陷區的底表面可低於下部基板的頂表面。
根據本發明概念的一些實例實施例,一種半導體封裝可包括:下部基板,包含導電線;中介基板,在下部基板上且經由多個凸塊電連接至下部基板;第一半導體晶片,在中介基板上;多個晶片堆疊,在中介基板上,在平行於下部基板的頂表面的第一方向上彼此隔離而不直接接觸,第一半導體晶片,在多個晶片堆疊之間;底部填充層,在下部基板與中介基板之間,底部填充層包含在中介基板下方的中心部分,及在第一方向上與中心部分隔離而不直接接觸的邊緣部分;以及凹陷區,在中心部分與邊緣部分之間。凹陷區可由中心部分的側壁、邊緣部分的側壁以及下部基板中的導電線的頂表面限定。
現將參考隨附圖式詳細地描述本發明概念的一些實例實施例以有助於清楚地解釋本發明概念。
儘管本文中可使用術語「第一」、「第二」、「第三」等來描述各種元件、組件、區、層以及/或部分,但此等元件、組件、區、層以及/或部分不應受此等術語限制。此等術語僅用以區分一個元件、組件、區、層或部分與另一區、層或部分。因此,在不脫離本揭露內容的範疇的情況下,下文所論述的第一元件、組件、區、層或部分可稱為第二元件、組件、區、層或部分。
為易於描述,可在本文中使用諸如「在...下方」、「下部」、「在...之下」、「上部」以及其類似者的空間相對術語,以描述如圖中所示出的一個元件或特徵與另一元件或特徵的關係。將理解,除圖中所描繪的定向以外,空間相對術語亦意欲涵蓋裝置在使用或操作中的不同定向。舉例而言,若將圖中的裝置翻轉,則描述為「在」其他元件或特徵「下方」或「在」其他元件或特徵「之下」的元件將定向為「在」其他元件或特徵「上方」。因此,實例術語「在...下方」及「在...之下」可涵蓋上方及下方的定向兩者。裝置可以其他方式定向(旋轉90度或處於其他定向),且本文中所使用的空間相對描述詞相應地進行解譯。
當術語「約」或「實質上」在本說明書中結合數值使用時,相關聯數值意欲包含所陳述數值周圍的製造容限(例如±10%)。此外,當字語「大體上」及「實質上」與幾何形狀結合使用時,意欲不要求幾何形狀的精確度,但形狀的寬容度在本揭露內容的範疇內。此外,應理解,不論是否以「約」或「實質上」修飾數值或形狀,此等值及形狀均應視為包含所陳述數值或形狀周圍的製造或操作容限(例如±10%)。
圖1示出繪示根據本發明概念的一些實例實施例的半導體封裝的平面圖。圖2示出沿圖1的線I-I'截取的橫截面圖。圖3示出繪示圖2的部分A的放大圖。圖4示出繪示圖2的部分B的放大圖。
參考圖1、圖2、圖3以及圖4,半導體封裝可包含下部基板100、安置於下部基板100上的半導體晶片300,以及插入於下部基板100與半導體晶片300之間的底部填充層400。
下部基板100可為印刷電路板(PCB)。下部基板100可包含第一下部基板襯墊110、第二下部基板襯墊120、下部基板線130以及導電線140。第一下部基板襯墊110可鄰近於下部基板100的頂表面,且第二下部基板襯墊120可鄰近於下部基板100的底表面。第一下部基板襯墊110可暴露於下部基板100的頂表面上。下部基板線130及導電線140可安置於下部基板100中,且可電連接至第一下部基板襯墊110及第二下部基板襯墊120。本文中,片語「兩個組件彼此電連接/電耦接」可包含例如「兩個組件彼此直接連接/耦接」及/或「兩個組件經由不同導電組件彼此間接連接/耦接」。第一下部基板襯墊110及/或第二下部基板襯墊120可包含導電材料,例如選自以下的至少一種金屬:錫(Sn)、鉛(Pb)、鎳(Ni)、金(Au)、銀(Ag)、銅(Cu)、鋁(Al)以及/或鉍(Bi)。下部基板線130及/或導電線140可包含導電材料,例如選自以下的至少一種金屬:銅(Cu)、鋁(Al)、鎢(W)以及/或鈦(Ti)。
外部端子150可設置於下部基板100的底表面上。舉例而言,外部端子150可安置於第二下部基板襯墊120的底表面上。外部端子150可電連接至下部基板線130。外部端子150可耦接至外部裝置。因此,外部電信號可經由外部端子150向第一下部基板襯墊110及自第一下部基板襯墊110傳輸。外部端子150可包含例如焊球及/或焊料凸塊。外部端子150可包含導電材料,例如選自以下的至少一種金屬:錫(Sn)、鉛(Pb)、鎳(Ni)、金(Au)、銀(Ag)、銅(Cu)、鋁(Al)以及/或鉍(Bi)。舉例而言,外部端子150可包含含有導電材料的共熔合金。
半導體晶片300可安裝於下部基板100上。半導體晶片300可包含例如邏輯晶片、緩衝晶片、系統晶片(system-on-chip;SOC)以及/或記憶體晶片。舉例而言,記憶體晶片可為動態隨機存取記憶體(dynamic random access memory;DRAM)晶片。半導體晶片300可包含鄰近於半導體晶片300的底表面的晶片襯墊360。晶片襯墊360可電連接至第一下部基板襯墊110中的對應者。晶片襯墊360可包含導電材料,例如選自以下的至少一種金屬:錫(Sn)、鉛(Pb)、鎳(Ni)、金(Au)、銀(Ag)、銅(Cu)、鋁(Al)以及/或鉍(Bi)。
基底凸塊250可插入於下部基板100與半導體晶片300之間。下部基板100可經由基底凸塊250電連接至半導體晶片300。晶片襯墊360中的每一者可經由基底凸塊250中的對應者電連接至第一下部基板襯墊110中的對應一者。基底凸塊250可包含導電材料,且/或包含選自焊球形狀、凸塊形狀以及/或支柱形狀中的至少一者。
底部填充層400可安置於下部基板100與半導體晶片300之間。底部填充層400可包含諸如環氧樹脂的介電聚合物材料。底部填充層400可包含中心部分401、邊緣部分402以及凹陷區410。中心部分401可安置於半導體晶片300下方,且可填充基底凸塊250之間的空間。舉例而言,中心部分401可填充下部基板100與半導體晶片300之間的空間。中心部分401可突起超出半導體晶片300的相對側壁。邊緣部分402可在第一方向D1上與中心部分401間隔開,其中第一方向D1為平行於下部基板100的頂表面的方向。舉例而言,當以橫截面觀察時,邊緣部分402可包含第一邊緣部分402a及第二邊緣部分402b。第一邊緣部分402a及第二邊緣部分402b可在第一方向D1上跨越中心部分401彼此間隔開。
當以平面觀察時,中心部分401可具有其拐角為非圓形或為圓形的四邊形結構。當以平面觀察時,邊緣部分402可具有環結構。舉例而言,邊緣部分402可具有其拐角為非圓形或為圓形的四邊形環結構。當以平面觀察時,邊緣部分402可圍繞中心部分401。當以平面觀察時,中心部分401與邊緣部分402可彼此間隔開。儘管示出為連續環結構,但邊緣部分402亦可包含例如環及/或區的寬度的變化,其中已在雷射蝕刻期間邊緣部分402大部分及/或完全移除。在此情況下,底部填充層400的雷射蝕刻的殘餘物及/或副產物可保留,且可包含於邊緣部分402中及/或作為邊緣部分402包含。
中心部分401可包含鄰近於第一邊緣部分402a的第一側壁401a及鄰近於第二邊緣部分402b的第二側壁401b。舉例而言,第一側壁401a可面向第一邊緣部分402a的第三側壁403s,且第二側壁401b可面向第二邊緣部分402b的第四側壁404s。第一側壁401a與第二側壁401b之間的在第一方向D1上的寬度可大於在半導體晶片300的相對側壁之間的在第一方向D1上的寬度。舉例而言,中心部分401可在第一方向D1上穿過半導體晶片300的側壁突起寬度W4。在一些實例實施例中,可給定約120微米至約500微米作為在第一側壁401a與半導體晶片300的一個側壁之間的在第一方向D1上的最小寬度W4,且/或可給定約120微米至約500微米作為在第二側壁401b與半導體晶片300的一個側壁之間的在第一方向D1上的最小寬度W4。第一側壁401a及第二側壁401b可各自具有在垂直於下部基板100的頂表面的第二方向D2上的高度H1,且高度H1可大於在邊緣部分402的至少一個側壁的第二方向D2上的高度H2。舉例而言,第一側壁401a及第二側壁401b中的每一者在第二方向D2上的高度H1可大於第一邊緣部分402a的第三側壁403s在第二方向D2上的高度H2及/或第二邊緣部分402b的第四側壁404s在第二方向D2上的高度H2。第一側壁401a及第二側壁401b中的每一者在第二方向D2上的高度H1可為中心部分401在第二方向D2上的最大高度H3的約60%至約88%。
凹陷區410可安置為鄰近於半導體晶片300的至少一側。凹陷區410可由中心部分401的一個側壁、邊緣部分402的一個側壁以及下部基板100中的導電線140的一部分的頂表面141限定。舉例而言,凹陷區410可包含第一凹陷區411及第二凹陷區412。第一凹陷區411可暴露中心部分401的第一側壁401a及第一邊緣部分402a的第三側壁403s。第二凹陷區412可暴露中心部分401的第二側壁401b及第二邊緣部分402b的第四側壁404s。第一凹陷區411及第二凹陷區412中的每一者可部分地暴露導電線140的對應頂表面141。導電線140的所暴露頂表面141可位於比下部基板100的頂表面的層級更低的層級處。舉例而言,第一凹陷區411及第二凹陷區412可各自具有在比下部基板100的頂表面的層級更低的層級處的底表面。儘管未示出,但根據本發明概念的一些實例實施例,凹陷區410可部分地暴露第一下部基板襯墊110中的一些的頂表面。
第一凹陷區411可具有窄於對應導電線140的寬度W3的寬度W1及/或寬度W2。舉例而言,第一凹陷區411在第一方向D1上的寬度W1可小於導電線140在第一方向D1上的寬度W3,且/或第二凹陷區412在第一方向D1上的寬度W2可小於導電線140在第一方向D1上的寬度W3。第一凹陷區411在第一方向D1上的寬度W1可介於約10微米至約500微米及/或約100微米至約500微米的範圍內。第二凹陷區412在第一方向D1上的寬度W2可介於約10微米至約500微米及/或約100微米至約500微米的範圍內。
一般而言,當執行後續退火製程時,歸因於由下部基板100與半導體晶片300之間的熱膨脹係數(coefficient of thermal expansion;CTE)差所產生的應力,可能出現底部填充層400開裂的問題。舉例而言,彎曲應力可與產生應力的區的平均橫截面面積成反比。根據本發明概念,雷射蝕刻製程可形成底部填充層400的凹陷區410,部分歸因於產生應力的區的平均橫截面面積的增加,此可導致轉移至底部填充層400的彎曲應力減小。因此,可減少底部填充層400上的開裂的出現,以提供具有增加的可靠性的半導體封裝。
圖5示出繪示根據本發明概念的一些實例實施例的半導體封裝的平面圖。圖6示出沿圖5的線I-I'截取的橫截面圖。下文將省略重複描述。舉例而言,對包含於底部填充層400中的中心部分401、邊緣部分402以及凹陷區410的描述可與參考圖3及圖4所論述的描述實質上相同。
參考圖5及圖6以及圖3及圖4,半導體封裝可更包含上部基底200、在上部基底200上的第一半導體晶片310以及在上部基底200上的多個第二半導體晶片320。
上部基底200可安置於下部基板100上。上部基底200可包含基底層202及在基底層202上的配線層201。配線層201及基底層202可共同稱為中介基板。舉例而言,基底層202可為矽(Si)基底。
配線層201可包含上部導電襯墊211、下部導電線221以及內部導電線231。配線層201可包含環繞上部導電襯墊211、下部導電線221以及內部導電線231的介電層241。上部導電襯墊211可鄰近於配線層201的頂表面,且下部導電線221可鄰近於配線層201的底表面。上部導電襯墊211可在配線層201的頂表面處暴露。下部導電線221可在配線層201的底表面處暴露。內部導電線231可安置於配線層201中,且可電連接至上部導電襯墊211及下部導電線221。上部導電襯墊211及下部導電線221可包含導電材料,例如選自以下的至少一種金屬:錫(Si)、鉛(Pb)、鎳(Ni)、金(Au)、銀(Ag)、銅(Cu)、鋁(Al)以及/或鉍(Bi)。內部導電線231可包含導電材料,例如選自以下的至少一種金屬:銅(Cu)、鋁(Al)、鎢(W)以及/或鈦(Ti)。
多個貫通電極260可安置於基底層202中,且可電連接至下部導電線221。多個貫通電極260中的每一者可穿透基底層202,且可具有與下部導電線221中的對應一者及/或第一下部基板襯墊110中的對應一者的電連接。多個貫通電極260可包含導電材料(例如銅(Cu)、鋁(Al)、鎢(W)以及/或鈦(Ti))。介電襯裡261可插入於基底層202與多個貫通電極260中的每一者之間。介電襯裡261可包含介電材料。下部導電襯墊265可安置為鄰近於基底層202的底表面,且可電連接至貫通電極260。下部導電襯墊265可包含導電材料(例如銅(Cu)、鋁(Al)、鎢(W)以及/或鈦(Ti))。
下部基板100可經由基底凸塊250電連接至上部基底200。上部導電襯墊211中的每一者可經由基底凸塊250中的對應一者電連接至第一下部基板襯墊110中的對應一者。基底凸塊250的間距可小於外部端子150的間距。
第一半導體晶片310可安裝於上部基底200上。第一半導體晶片310可包含邏輯晶片、緩衝晶片或系統晶片(SOC)。舉例而言,第一半導體晶片310可包含特殊應用積體電路(application specific integrated circuit;ASIC)晶片、應用程式處理器(application processor;AP)晶片、中央處理單元(central processing unit;CPU)以及/或圖形處理單元(graphic processing unit;GPU)。ASIC晶片可包含特殊應用積體電路(ASIC)。
多個第二半導體晶片320可安裝於上部基底200上。舉例而言,第二半導體晶片320可堆疊於上部基底200上。多個第二半導體晶片320可形成多個晶片堆疊。第二半導體晶片320可在平行於下部基板100的方向D1上彼此間隔開及/或與第一半導體晶片310間隔開。舉例而言,多個晶片堆疊可在方向D1上彼此及/或與第一半導體晶片310隔離而不直接接觸。多個晶片堆疊與第一半導體晶片310可經由配線層201電連接。多個第二半導體晶片320可與第一半導體晶片310屬於不同的類型。多個第二半導體晶片320可為例如記憶體晶片。記憶體晶片可包含高帶寬記憶體(high bandwidth memory;HBM)晶片。舉例而言,第二半導體晶片320可包含動態隨機存取記憶體(DRAM)晶片。
第二半導體晶片320中的一些及/或全部可包含積體電路(未繪示)及/或穿孔365。積體電路可設置於第二半導體晶片320中。穿孔365可穿透第二半導體晶片320中的對應一者,且可具有與積體電路的電連接。舉例而言,第二半導體晶片320中的最上部者可不包含穿孔365。
上部凸塊355可插入於兩個相鄰第二半導體晶片320之間。上部凸塊355可電連接至相鄰第二半導體晶片320的對應穿孔365。第二半導體晶片320可經由上部凸塊355電連接至上部基底200及其他第二半導體晶片320。上部凸塊355可包含導電材料,例如選自以下的至少一種金屬:錫(Sn)、鉛(Pb)、鎳(Ni)、金(Au)、銀(Ag)、銅(Cu)、鋁(Al)以及/或鉍(Bi)。舉例而言,上部凸塊355可包含含有導電材料的共熔合金。
第一晶片底部填充層460可插入於兩個相鄰第二半導體晶片320之間,且可填充上部凸塊355之間的空間。舉例而言,第一晶片底部填充層460可包含非導電膜(non-conductive film;NCF),例如諸如味之素累積膜(Ajinomoto build-up film;ABF)的熱固性模製膜。
第一半導體晶片310可包含鄰近於第一半導體晶片310的底表面的晶片襯墊360。第二半導體晶片320中的一些及/或全部可包含鄰近於第二半導體晶片320的頂表面及底表面的晶片襯墊360。舉例而言,晶片襯墊360可不包含於第二半導體晶片320中的最上部者的頂表面上。晶片襯墊360可電連接至第一上部基底襯墊210中的對應者。
晶片凸塊350可插入於上部基底200與第一半導體晶片310之間及/或上部基底200與第二半導體晶片320中的最下部者之間。上部基底200可經由晶片凸塊350電連接至第一半導體晶片310及第二半導體晶片320中的最下部者。晶片襯墊360中的每一者可經由基底凸塊250中的對應一者電連接至第一上部基底襯墊210中的對應一者。晶片凸塊350可包含導電材料,且可具有選自焊球形狀、凸塊形狀以及支柱形狀中的至少一者。晶片凸塊350的間距可小於基底凸塊250的間距。舉例而言,將第一半導體晶片310電連接至上部基底200的晶片凸塊350的間距及/或將第二半導體晶片320電連接至上部基底200的晶片凸塊350的間距可各自小於基底凸塊250的間距。
晶片底部填充層450可插入於上部基底200與第一半導體晶片310之間及/或上部基底200與第二半導體晶片320中的最下部者之間,且可填充晶片凸塊350之間的空間。舉例而言,堆疊的第二半導體晶片320與第一半導體晶片之間的上部基底的頂表面的一部分可由晶片底部填充層450中的間隙暴露。晶片底部填充層450可包含諸如環氧類樹脂及/或模製化合物的介電聚合物材料。
可將模製層500設置於上部基底200上,從而覆蓋第一半導體晶片310及第二半導體晶片320。模製層500可包含例如諸如環氧類樹脂及/或模製化合物的介電聚合物。
底部填充層400可插入於下部基板100與上部基底200之間。舉例而言,上部基底200的底表面可與底部填充層400的頂表面接觸。底部填充層400可包含中心部分401、邊緣部分402以及凹陷區410。中心部分401可安置於上部基底200下方,且可填充基底凸塊250之間的空間。舉例而言,中心部分401可填充下部基板100與上部基底200之間的空間。對包含於底部填充層400中的中心部分401及邊緣部分402的描述可與參考圖3及圖4所論述的描述實質上相同。
一般而言,當執行後續退火製程時,歸因於由下部基板100與中介基板(例如上部基底200)之間的CTE差所產生的應力,可能出現底部填充層400開裂的問題。根據本發明概念,雷射蝕刻製程可形成底部填充層400的凹陷區410,歸因於產生應力的區的平均橫截面面積的增加,此可減小轉移至底部填充層400的彎曲應力。因此,可減少底部填充層400上的開裂的出現,以提供具有增加的可靠性的半導體封裝。
除在下部基板100上設置有上部基底200而非半導體晶片300,且在上部基底200上設置有第一半導體晶片310及第二半導體晶片320之外,圖5及圖6中所示出的實例實施例可與參考圖1至圖4所論述的實例實施例實質上相同。
圖7示出繪示根據本發明概念的一些實例實施例的半導體封裝的平面圖。圖8示出沿圖7的線I-I'截取的橫截面圖。下文將省略重複描述。舉例而言,對包含於底部填充層400中的中心部分401、邊緣部分402以及凹陷區410的描述可與參考圖3及圖4所論述的描述實質上相同。
參考圖7及圖8以及圖3及圖4,半導體封裝可更包含上部基底200、安裝於上部基底200上的第一半導體晶片310,以及安置於第一半導體晶片310上的第二半導體晶片320。
上部基底200可安置於下部基板100上。上部基底200可包含第一上部基底襯墊210、第二上部基底襯墊220以及上部基底線230。第一上部基底襯墊210可鄰近於上部基底200的頂表面,且第二上部基底襯墊220可鄰近於上部基底200的底表面。第一上部基底襯墊210可在上部基底200的頂表面處暴露。第二上部基底襯墊220可在上部基底200的底表面處暴露。上部基底線230可安置於上部基底200中,且可電連接至第一上部基底襯墊210及第二上部基底襯墊220。第一上部基底襯墊210及第二上部基底襯墊220可包含導電材料,例如選自以下的至少一種金屬:錫(Sn)、鉛(Pb)、鎳(Ni)、金(Au)、銀(Ag)、銅(Cu)、鋁(Al)以及/或鉍(Bi)。上部基底線230可包含導電材料,例如選自以下的至少一種金屬:銅(Cu)、鋁(Al)、鎢(W)以及/或鈦(Ti)。
下部基板100可經由基底凸塊250電連接至上部基底200。第一上部基底襯墊210中的每一者可經由基底凸塊250中的對應一者電連接至第一下部基板襯墊110中的對應一者。基底凸塊250的間距可小於外部端子150的間距。
第一半導體晶片310可安裝於上部基底200上。多個第二半導體晶片320可安裝於第一半導體晶片310上。第二半導體晶片320可堆疊於第一半導體晶片310上。第一半導體晶片310及/或第二半導體晶片320可形成晶片堆疊。
除上部基底200安置於下部基板100上,第一半導體晶片310安裝於上部基底200上,且第二半導體晶片320安裝於第一半導體晶片310上之外,圖7及圖8中所示出的實例實施例可與參考圖1至圖6所論述的實例實施例實質上相同。
圖9示出繪示根據本發明概念的一些實例實施例的半導體封裝的平面圖。圖10示出沿圖9的線I-I'截取的橫截面圖。下文將省略上文所論述的重複描述。
參考圖9及圖10,半導體封裝可更包含加強桿600及連接圖案610。加強桿600可安置為鄰近於第一半導體晶片310,且可置放為在第一方向D1上與底部填充層400的邊緣部分402間隔開。舉例而言,當以平面圖觀察時,加強桿600可圍繞底部填充層400。加強桿600可具有桿形狀及四邊形橫截面,但本發明概念不限於此。與所繪示之物不同,加強桿600可不具有單一整體結構,而是可具有彼此間隔開的多個結構。加強桿600可包含導電材料。舉例而言,加強桿600可包含選自以下的至少一者:鈀(Pd)、鋁(Al)、鎳(Ni)、鈦(Ti)、金(Au)、銅(Cu)以及/或鉑(Pt)。加強桿600可經由連接圖案610連接至下部基板100。連接圖案610可包含導電材料。連接圖案610可包含與加強桿600相同及/或不同的導電材料。加強桿600可防止下部基板100在後續製程中翹曲。
除更包含加強桿600及連接圖案610之外,如圖9及圖10中所示出的實例實施例可與參考圖5及圖6所論述的實例實施例實質上相同。此外,儘管未繪示,但加強桿600及連接圖案610亦可包含於圖1及圖2以及圖7及圖8中所示出的實施例中。
圖11、圖13以及圖1示出繪示根據本發明概念的一些實例實施例的製造半導體封裝的方法的平面圖。圖12、圖14以及圖2示出繪示根據本發明概念的一些實例實施例的製造半導體封裝的方法的橫截面圖。
參考圖11及圖12,可設置下部基板100。第二下部基板襯墊120及外部端子150可設置於下部基板100的底表面上。第一下部基板襯墊110可設置於下部基板100的頂表面上。下部基板線130及導電線140可設置於下部基板100中。基底凸塊250可設置於下部基板100上的第一下部基板襯墊110中的對應者上。半導體晶片300可安裝於下部基板100上。半導體晶片300的安裝可包含將基底凸塊250耦接至半導體晶片300的底表面上的晶片襯墊360。
參考圖13及圖14,底部填充層400可形成於下部基板100與半導體晶片300之間。底部填充層400的形成可包含藉由填充下部基板100與半導體晶片300之間的空間來密封基底凸塊250。
返回參考圖1及圖2,凹陷區410可形成於在半導體晶片300的一側上形成的底部填充層400上。凹陷區410的形成可包含對底部填充層400執行雷射蝕刻製程。凹陷區410的形成可包含在半導體晶片300下方形成填充基底凸塊250之間的空間的中心部分401,以及同時形成在第一方向D1上與中心部分401間隔開的邊緣部分402,其中第一方向D1平行於下部基板100的頂表面。雷射蝕刻製程可暴露中心部分401的一個側壁、邊緣部分402的一個側壁以及下部基板100中的導電線140的一部分的頂表面141。對包含於底部填充層400中的中心部分401、邊緣部分402以及凹陷區410的描述可與參考圖3及圖4所論述的描述實質上相同。
在根據本發明概念的一些實例實施例的半導體封裝中,雷射蝕刻製程可形成具有凹陷區的底部填充層,以使得底部填充層的中心部分可具有增加的高度。因此,歸因於產生應力的區的平均橫截面面積的增加,可減小彎曲應力。因此,可減少底部填充層上的開裂的出現,以提供具有增加的可靠性的半導體封裝。
儘管已結合隨附圖式中所示出的本發明概念的一些實例實施例描述本發明概念,但所屬領域中具有通常知識者應理解,可在不脫離本發明概念的精神及基本特徵的情況下在本發明概念中作出形式及細節的變化。因此,應將上文所揭露的實施例視為說明性且非限制性的。
100:下部基板
110:第一下部基板襯墊
120:第二下部基板襯墊
130:下部基板線
140:導電線
141:頂表面
150:外部端子
200:上部基底
201:配線層
202:基底層
210:第一上部基底襯墊
211:上部導電襯墊
220:第二上部基底襯墊
221:下部導電線
230:上部基底線
231:內部導電線
241:介電層
250:基底凸塊
260:貫通電極
261:介電襯裡
265:下部導電襯墊
300:半導體晶片
310:第一半導體晶片
320:第二半導體晶片
350:晶片凸塊
355:上部凸塊
360:晶片襯墊
365:穿孔
400:底部填充層
401:中心部分
401a:第一側壁
401b:第二側壁
402:邊緣部分
402a:第一邊緣部分
402b:第二邊緣部分
403s:第三側壁
404s:第四側壁
410:凹陷區
411:第一凹陷區
412:第二凹陷區
450:晶片底部填充層
460:第一晶片底部填充層
500:模製層
600:加強桿
610:連接圖案
A、B:部分
D1:第一方向
D2:第二方向
H1、H2、H3:高度
I-I':線
W1、W2、W3、W4:寬度
圖1示出繪示根據本發明概念的一些實例實施例的半導體封裝的平面圖。
圖2示出沿圖1的線I-I'截取的橫截面圖。
圖3示出繪示圖2的部分A的放大圖。
圖4示出繪示圖2的部分B的放大圖。
圖5示出繪示根據本發明概念的一些實例實施例的半導體封裝的平面圖。
圖6示出沿圖5的線I-I'截取的橫截面圖。
圖7示出繪示根據本發明概念的一些實例實施例的半導體封裝的平面圖。
圖8示出沿圖7的線I-I'截取的橫截面圖。
圖9示出繪示根據本發明概念的一些實例實施例的半導體封裝的平面圖。
圖10示出沿圖9的線I-I'截取的橫截面圖。
圖11及圖13示出繪示根據本發明概念的一些實例實施例的製造半導體封裝的方法的平面圖。
圖12至圖14示出繪示根據本發明概念的一些實例實施例的製造半導體封裝的方法的橫截面圖。
100:下部基板
110:第一下部基板襯墊
120:第二下部基板襯墊
130:下部基板線
140:導電線
150:外部端子
250:基底凸塊
300:半導體晶片
360:晶片襯墊
401:中心部分
402:邊緣部分
402a:第一邊緣部分
402b:第二邊緣部分
410:凹陷區
411:第一凹陷區
412:第二凹陷區
A、B:部分
D1:第一方向
D2:第二方向
I-I':線
Claims (10)
- 一種半導體封裝,包括: 下部基板,包含導電線; 第一半導體晶片,在所述下部基板上;以及 底部填充層,在所述第一半導體晶片與所述下部基板之間,所述底部填充層包含: 中心部分,在所述第一半導體晶片下方; 邊緣部分,在平行於所述下部基板的頂表面的第一方向上與所述中心部分隔離而不直接接觸;以及 凹陷區,在所述中心部分與所述邊緣部分之間,所述凹陷區由所述中心部分的側壁、所述邊緣部分的側壁以及所述導電線的頂表面的一部分限定。
- 如請求項1所述的半導體封裝,其中 所述底部填充層的所述中心部分填充所述下部基板與所述第一半導體晶片之間的空間,且 所述底部填充層的所述凹陷區鄰近於所述第一半導體晶片的一側。
- 如請求項1所述的半導體封裝,其中所述凹陷區在所述第一方向上的寬度在10微米至500微米的範圍內。
- 如請求項1所述的半導體封裝,其中所述中心部分的所述側壁與所述第一半導體晶片的側壁之間的在所述第一方向上的最小寬度在120微米至500微米的範圍內。
- 如請求項1所述的半導體封裝,更包括: 中介基板,在所述下部基板與所述第一半導體晶片之間, 其中所述中介基板的底表面與所述底部填充層的頂表面接觸,且 其中所述第一半導體晶片在所述中介基板的頂表面上。
- 如請求項5所述的半導體封裝,更包括: 多個第二半導體晶片,在所述中介基板的所述頂表面上, 其中所述多個第二半導體晶片與所述第一半導體晶片屬於不同的類型。
- 如請求項5所述的半導體封裝,更包括: 晶片堆疊,在所述第一半導體晶片上, 其中所述晶片堆疊包含多個堆疊的第二半導體晶片, 其中所述多個堆疊的第二半導體晶片與所述第一半導體晶片屬於不同的類型。
- 一種半導體封裝,包括: 下部基板,包含導電線; 第一半導體晶片,在所述下部基板上;以及 底部填充層,在所述第一半導體晶片與所述下部基板之間,所述底部填充層包含: 中心部分,在所述第一半導體晶片下方; 邊緣部分,在平行於所述下部基板的頂表面的第一方向上與所述中心部分隔離而不直接接觸;以及 凹陷區,在所述中心部分與所述邊緣部分之間, 其中所述凹陷區的底表面低於所述下部基板的所述頂表面。
- 一種半導體封裝,包括: 下部基板,包含導電線; 中介基板,在所述下部基板上,且經由多個凸塊電連接至所述下部基板; 第一半導體晶片,在所述中介基板上; 多個晶片堆疊,在所述中介基板上,且在平行於所述下部基板的頂表面的第一方向上彼此隔離而不直接接觸,所述第一半導體晶片在所述多個晶片堆疊之間;以及 底部填充層,在所述下部基板與所述中介基板之間,所述底部填充層包含: 中心部分,在所述中介基板下方; 邊緣部分,在所述第一方向上與所述中心部分隔離而不直接接觸;以及 凹陷區,在所述中心部分與所述邊緣部分之間,所述凹陷區由所述中心部分的側壁、所述邊緣部分的側壁以及所述下部基板中的所述導電線的頂表面的一部分限定。
- 如請求項9所述的半導體封裝,其中所述中心部分的所述側壁的高度為所述中心部分的最大高度的60%至88%。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020200087560A KR20220009534A (ko) | 2020-07-15 | 2020-07-15 | 반도체 패키지 및 이의 제조 방법 |
KR10-2020-0087560 | 2020-07-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202205556A true TW202205556A (zh) | 2022-02-01 |
Family
ID=79293586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110108629A TW202205556A (zh) | 2020-07-15 | 2021-03-11 | 半導體封裝 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20220020656A1 (zh) |
KR (1) | KR20220009534A (zh) |
TW (1) | TW202205556A (zh) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9041205B2 (en) * | 2013-06-28 | 2015-05-26 | Intel Corporation | Reliable microstrip routing for electronics components |
US20200126887A1 (en) * | 2018-10-18 | 2020-04-23 | Intel Corporation | Thin line dam on underfill material to contain thermal interface materials |
-
2020
- 2020-07-15 KR KR1020200087560A patent/KR20220009534A/ko unknown
-
2021
- 2021-02-25 US US17/185,116 patent/US20220020656A1/en active Pending
- 2021-03-11 TW TW110108629A patent/TW202205556A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20220009534A (ko) | 2022-01-25 |
US20220020656A1 (en) | 2022-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9502335B2 (en) | Package structure and method for fabricating the same | |
US20220310577A1 (en) | Semiconductor package | |
US11935867B2 (en) | Semiconductor package with memory stack structure connected to logic dies via an interposer | |
US20220013487A1 (en) | Semiconductor package | |
US20210305188A1 (en) | Semiconductor device | |
US20240162133A1 (en) | Semiconductor package | |
US11837551B2 (en) | Semiconductor package | |
US9893037B1 (en) | Multi-chip semiconductor package, vertically-stacked devices and manufacturing thereof | |
US11961793B2 (en) | Semiconductor package including a redistribution substrate and a method of fabricating the same | |
US20220285328A1 (en) | Semiconductor package including redistribution substrate | |
TWI806048B (zh) | 半導體封裝體及其製造方法 | |
KR20230033115A (ko) | 반도체 패키지 | |
KR20230041250A (ko) | 반도체 소자 및 이를 포함하는 반도체 패키지 | |
TW202205556A (zh) | 半導體封裝 | |
US20240038642A1 (en) | Semiconductor package | |
US20240079342A1 (en) | Semiconductor package and a method of fabricating the same | |
US20230352460A1 (en) | Semiconductor package | |
US11562966B2 (en) | Semiconductor package | |
US20230230946A1 (en) | Semiconductor package | |
US20230317590A1 (en) | Semiconductor package | |
US20240014117A1 (en) | Semiconductor package | |
US20240170455A1 (en) | Semiconductor package | |
US20230106578A1 (en) | Semiconductor package | |
KR20230041860A (ko) | 반도체 패키지 | |
KR20240031825A (ko) | 반도체 패키지 및 그 제조 방법 |