TW202204883A - Light filtering device, optical microscope, and defect observation apparatus - Google Patents
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Abstract
Description
本發明,係關於光學濾波裝置、光學顯微鏡及缺陷觀察裝置。The present invention relates to an optical filter device, an optical microscope, and a defect observation device.
缺陷觀察裝置,係具備有:掃描型電子顯微鏡(SEM)等,在半導體生產線等,進行產生於半導體基板即晶圓的表面之各種缺陷、異物等(以下稱為「缺陷等」。)的再檢測、分類等。A defect observation apparatus is equipped with a scanning electron microscope (SEM) or the like, and performs inspection of various defects, foreign matter, etc. (hereinafter referred to as "defects, etc.") generated on the surface of a semiconductor substrate, ie, a wafer, in a semiconductor production line or the like. detection, classification, etc.
缺陷觀察裝置,係期望更具備有光學顯微鏡。缺陷觀察裝置,係具有「控制光學顯微鏡,並効率良好且自動地檢測晶圓表面之缺陷等而進行座標對準」的功能。關於藉由光學顯微鏡檢測到之微小的缺陷等,係可藉由控制SEM的方式,詳細地觀察其形狀而進行成分分析。光學顯微鏡,係期望可使用來作為暗視野光學顯微鏡(DFOM:Dark Field Optical Microscope)。It is desired that the defect observation apparatus is further equipped with an optical microscope. The defect observation device has the function of "controlling an optical microscope, and efficiently and automatically detecting defects on the wafer surface and performing coordinate alignment." Regarding minute defects detected by an optical microscope, etc., a component analysis can be performed by observing the shape in detail by controlling the SEM. An optical microscope is expected to be used as a dark field optical microscope (DFOM: Dark Field Optical Microscope).
又,缺陷觀察裝置,係具有自動地輸出SEM像、缺陷等的分類資料、元素分析資料等的功能,並亦可從所輸出的資料作成缺陷圖。而且,缺陷觀察裝置,係亦可依據所作成之缺陷圖,進行缺陷等的觀察、分類及分析。因此,缺陷觀察裝置,係亦被稱為再檢測SEM。又,亦被稱為缺陷再檢測SEM(Defect Review-SEM)或晶圓檢查SEM。In addition, the defect observation apparatus has a function of automatically outputting SEM images, classification data of defects and the like, elemental analysis data, and the like, and can also create a defect map from the output data. Furthermore, the defect observation device can also observe, classify, and analyze defects, etc., based on the created defect map. Therefore, the defect observation device is also called a re-inspection SEM. Also, it is also referred to as a defect re-inspection SEM (Defect Review-SEM) or a wafer inspection SEM.
換言之,在缺陷觀察裝置中,光學顯微鏡與SEM,係具有共用的平台,關於載置於該平台之晶圓,能以光學顯微鏡進行觀察而特定所檢測到之缺陷等的位置,並藉由SEM觀察其缺陷等。例如,依照具有數十μm之精度的缺陷圖,可使用缺陷觀察裝置之暗視野顯微鏡,在數百nm的範圍內搜索缺陷等,並以數μm以下之精度特定缺陷等的位置。In other words, in the defect observation apparatus, the optical microscope and the SEM have a common platform, and the wafer mounted on the platform can be observed with the optical microscope to specify the position of the detected defect, etc. Observe its defects, etc. For example, according to a defect map with an accuracy of several tens of μm, a dark field microscope of a defect observation device can be used to search for defects in the range of several hundreds of nanometers, and the positions of defects and the like can be specified with an accuracy of several μm or less.
藉此,可修正光學顯微鏡與SEM之座標系統的偏差,使缺陷觀察的成功率提高而維持高生產率。又,在半導體元件之製造工程中,可提前檢測成為配線之絕緣不良或短路等的不良原因之缺陷等,並判斷其產生源而防止良率下降。Thereby, the deviation of the coordinate system between the optical microscope and the SEM can be corrected, the success rate of defect observation can be improved, and high productivity can be maintained. Moreover, in the manufacturing process of a semiconductor element, it is possible to detect in advance a defect or the like that causes a defect such as poor insulation of wiring or a short circuit, and to determine the source of the defect, thereby preventing a decrease in yield.
在專利文獻1,係揭示有如下述者:在具備有第一攝像部(光學顯微鏡)及第二攝像部(SEM)之缺陷觀察裝置中,從第一攝像部之複數個攝像裝置中來設定第一攝像部的下一個攝像裝置或第二攝像部的攝像條件,並將積算框數、加速電壓、探針電流、攝像倍率或攝像視野設定為第二攝像部的攝像條件,基於藉由第一攝像部所檢測到之缺陷的位置資訊與藉由第一攝像部之圖像取得所獲得的資訊,算出座標修正式,並基於所修正的位置資訊,使用第二攝像部來拍攝缺陷。
在專利文獻2,係揭示一種具備有遮光片陣列之光學濾波裝置,該遮光片陣列,係具有:孔部,2維狀地配列於SOI晶圓;遮光片圖案,為覆蓋孔部之光學不透明的薄膜,且2維狀配列於SOI晶圓上;及工作電極,被形成於SOI晶圓。在此,SOI,係Silicon on Insulator的簡稱,SOI晶圓,係具有「氧化物絕緣膜(BOX層:Buried Oxide層)、表面Si膜(SOI部)被形成於Si基板上」的構造者。
先前技術文獻
專利文獻
專利文獻1:日本特開2019-132637號公報 專利文獻2:日本特許第5867736號公報Patent Document 1: Japanese Patent Laid-Open No. 2019-132637 Patent Document 2: Japanese Patent No. 5867736
本發明所欲解決之課題Problem to be solved by the present invention
在暗視野顯微鏡中,係需要因應缺陷等的種類之瞳孔濾光片,且被要求具有與多種類的缺陷等對應之1mm以下的尺寸之微小的遮光片。吾人考慮,藉由使像這樣的遮光片開關的方式,可形成多種空間濾光片。In a dark-field microscope, pupil filters are required for different types of defects, and it is required to have a minute light shielding sheet with a size of 1 mm or less corresponding to various types of defects and the like. I think that by switching the shutters like this, a variety of spatial filters can be formed.
在不使用像這樣的遮光片之以往的暗視野光學系統所致之缺陷檢測中,係利用各種缺陷散射光之光瞳面上的空間特性及偏光特性,藉由空間濾光片及偏光濾光片,提高判別缺陷與成為檢測雜訊之晶圓粗糙部位的可能性。In defect detection by conventional dark-field optical systems that do not use such a light-shielding sheet, the spatial characteristics and polarization characteristics on the pupil plane of scattered light from various defects are utilized, and spatial filters and polarization filters are used to detect defects. wafers, increasing the possibility of identifying defects and wafer roughness that becomes detection noise.
由於有利於檢測之空間濾光片的形狀因缺陷等的種類而不同,因此,為了提高複數種缺陷之檢測感度,係需要複數種空間濾光片與濾光片切換機構。其原因在於,藉由使用濾光片切換機構的方式,可選擇遮光片之開關部位,並可構成複數種空間濾光片。Since the shape of the spatial filter useful for detection differs depending on the type of defect, etc., in order to improve the detection sensitivity of a plurality of defects, a plurality of spatial filters and filter switching mechanisms are required. The reason for this is that by using the filter switching mechanism, the switch portion of the light shield can be selected, and a plurality of spatial filters can be formed.
在遮光片進行開關動作時,係產生於彈性變形之軸部即懸吊部的變形量變大。因此,有遮光片之軸部及其周邊部因重覆開關動作而容易發生疲勞破壞而遮光片之壽命縮短的疑慮。When the light-shielding sheet performs the opening and closing operation, the amount of deformation of the suspension portion, which is the shaft portion that is elastically deformed, increases. Therefore, there is a possibility that the shaft portion and the peripheral portion of the light shielding sheet are prone to fatigue failure due to repeated switching operations, thereby shortening the life of the light shielding sheet.
本發明,係以「防止使用於缺陷觀察裝置之構成要素即光學顯微鏡的遮光片陣列裝置(光學濾波裝置)之遮光片的疲勞破壞,並延長遮光片陣列裝置之壽命」為目的。 用以解決課題之手段The purpose of the present invention is to "prevent fatigue failure of the light shielding plate used in the light shielding plate array device (optical filter device) of the optical microscope, which is a component of the defect observation device, and prolong the life of the light shielding plate array device". means of solving problems
本發明之光學濾波裝置,係具備有:遮光片,具有軸部並具有可開關的構成;及基板,具有遮光片開口部,具有對遮光片與基板之間施加電壓的構成,遮光片,係具有「藉由繞軸部旋轉並移動至遮光片開口部而成為開啟狀態」的構成,遮光片之張角,係具有被調整成未滿90度的構成。 發明之效果The optical filter device of the present invention includes: a light-shielding plate having a shaft portion and a switchable structure; and a substrate having an opening portion of the light-shielding plate and having a structure for applying a voltage between the light-shielding plate and the substrate, and the light-shielding plate is a It has a structure of "turning around the shaft part and moving to the opening of the light-shielding sheet to be in an open state", and the opening angle of the light-shielding sheet is adjusted to be less than 90 degrees. effect of invention
根據本發明,可防止使用於缺陷觀察裝置之構成要素即光學顯微鏡的光學濾波裝置之遮光片的疲勞破壞,並延長遮光片陣列裝置之壽命。According to the present invention, fatigue failure of a light shielding sheet used in an optical filter device of an optical microscope, which is a constituent element of a defect observation device, can be prevented, and the life of the light shielding sheet array device can be extended.
圖1,係表示缺陷觀察裝置的示意構成圖。FIG. 1 is a schematic configuration diagram showing a defect observation apparatus.
在本圖中,缺陷觀察裝置10,係具備有:掃描型電子顯微鏡1002(SEM);光學顯微鏡1003(缺陷檢測部);控制部1006;終端1007;記錄裝置1008;及網路1009。In this figure, the
掃描型電子顯微鏡1002,係與平台1004一起被設置於真空槽1005。在平台1004,係可載置晶圓1001。晶圓1001,係可與平台1004一起移動,該平台1004,係可在X軸及Y軸移動。藉此,可由掃描型電子顯微鏡1002及光學顯微鏡1003來觀察晶圓1001的任意表面。Scanning
光學顯微鏡1003,係具備有:雷射光源1010;接物透鏡1013;成像透鏡1015;及攝像元件1016。接物透鏡1013,係被設置於真空槽1005。因此,以使通過了接物透鏡1013之光到達攝像元件1016的方式,設置有真空密封窗1014。在真空密封窗1014與成像透鏡1015之間,係從真空密封窗1014側依序設置有微透鏡陣列1103、遮光片陣列裝置1101及微透鏡陣列1102。從雷射光源1010所照射之光線,係被構成為通過真空密封窗1011經由反射鏡1012照射至晶圓1001的上面。The
在晶圓1001之上面反射的光,係依序通過接物透鏡1013及真空密封窗1014,且依序通過微透鏡陣列1103、遮光片陣列裝置1101及微透鏡陣列1102,由成像透鏡1015成像,並藉由攝像元件1016來檢測。作為攝像元件1016,係可使用2維CCD感測器、線CCD感測器、將複數個TDI平行配置的TDI感測器群、光二極體陣列等。在此,CCD,係Charge-Coupled Device的簡稱。又,TDI,係Time Delay Integration的簡稱。The light reflected on the top of the
掃描型電子顯微鏡1002與光學顯微鏡1003,係被固定為保持正確的距離。The
控制部1006,係具有:平台控制電路1018;SEM攝像系統控制電路1019;圖像處理電路1020;外部輸出入介面1021;中央演算部1022(CPU);及記憶體1023。平台控制電路1018、SEM攝像系統控制電路1019及圖像處理電路1020,係經由匯流排1024與外部輸出入介面1021、中央演算部1022及記憶體1023連接。平台控制電路1018、SEM攝像系統控制電路1019及圖像處理電路1020,係用以移動晶圓1001、觀察晶圓1001的表面之缺陷等進行其他操作的電路。圖像處理電路1020,係累計由攝像元件1016所取得之圖像的信號,並進行資料轉換等,且進行判別缺陷等的種類、特定其位置及尺寸。在本說明書中,關於判別、特定等的結果之資訊,係稱為「缺陷資訊」。The
缺陷資訊,係被輸入至記錄裝置1008或記憶體1023。記憶體1023,係主要被使用於暫時保存。另一方面,記錄裝置1008,係可用於儲存並保管所取得的缺陷資訊。The defect information is input to the
在控制部1006中,係基於缺陷資訊,平台控制電路1018控制平台1004,SEM攝像系統控制電路1019控制掃描型電子顯微鏡1002。而且,在控制部1006中,係詳細地觀察任何或所有由光學顯微鏡1003所檢測到的缺陷等,並進行缺陷等的分類、其產生原因的分析等。又,在控制部1006中,係亦進行SEM像之焦點或輸出的控制、分析的控制、由掃描型電子顯微鏡1002所獲得之資料的解析、由光學顯微鏡1003所獲得之缺陷等的位置修正等。而且,在控制部1006中,係亦可進行在終端1007的顯示、經由網路1009的資料傳送等。In the
在終端1007中,係進行關於缺陷等的觀察之條件設定。又,在終端1007中,係進行用以控制掃描型電子顯微鏡1002、光學顯微鏡1003及平台1004的參數設定。又,在終端1007中,係亦進行關於遮光片陣列裝置1101的遮光片(後述)之開關動作的設定。而且,在終端1007中,係亦可將遮光片開啟時之角度(張角)調整成適當的值。在該情況下,係亦可採用「一面在終端1007確認從由攝像元件1016所獲得之圖像轉換成光瞳影像的圖像,一面進行施加至遮光片陣列裝置1101的電壓之調整」的方法。藉此,可防止因過度開啟遮光片而產生之對基板的附著、遮光片的軸部之破損等的故障。In the terminal 1007, conditions for observation of defects and the like are set. Moreover, in the terminal 1007, parameter setting for controlling the
作為「欲抵抗遮光片之開啟狀態下的應力而返回到關閉狀態」之彈性體的力作用於遮光片的軸部。藉由該力與以施加上述電壓而產生之欲開啟遮光片的靜電力間之平衡,決定張角。因此,可藉由調整上述電壓的方式,調整張角。遮光片之張角的上限值,係藉由上述電壓來決定。The force of the elastic body that "returns to the closed state against the stress in the open state of the light-shielding sheet" acts on the shaft portion of the light-shielding sheet. The opening angle is determined by the balance between the force and the electrostatic force to open the light-shielding sheet generated by applying the above-mentioned voltage. Therefore, the opening angle can be adjusted by adjusting the above-mentioned voltage. The upper limit value of the opening angle of the light-shielding sheet is determined by the above-mentioned voltage.
圖2,係表示缺陷觀察裝置之缺陷檢測部即光學顯微鏡的示意構成圖。FIG. 2 is a schematic configuration diagram showing an optical microscope, which is a defect detection unit of the defect observation apparatus.
在本圖中,光學顯微鏡20,係具備有:攝像元件100(感測器);成像透鏡101;及接物透鏡102。在成像透鏡101與接物透鏡102之間,係設置有微透鏡陣列106、107。在微透鏡陣列106、107之間,係設置有遮光片陣列裝置200(光學濾波裝置)。微透鏡陣列106、107及遮光片陣列裝置200,係被設置於光學顯微鏡20之光瞳面的附近。In this figure, the
接物透鏡102,係被構成為從雷射光源103照射至晶圓104之光線300在晶圓104的表面反射,並供其反射光301入射。通過了接物透鏡102之光,係通過光瞳面(傅立葉轉換面)及成像透鏡101到達攝像元件100,並被檢測為電性信號。另外,從雷射光源103所照射之光線300,係透過真空密封窗351,在反射鏡352反射而照射至晶圓104。The
在缺陷108存在於晶圓104的情況下,係接觸到缺陷108之光線300反射而產生與通常不同的反射光301。可藉由攝像元件100檢測該反射光301,並藉由圖1之圖像處理電路1020取得對應於缺陷108之像的資料。藉由使平台105移動的方式,可發現存在於晶圓104之表面的缺陷108。In the case where the
圖3A,係表示遮光片陣列裝置及微透鏡陣列的示意放大圖。FIG. 3A is a schematic enlarged view of a light shielding plate array device and a microlens array.
在本圖中,係在微透鏡陣列106、107之間設置有遮光片陣列裝置200。遮光片陣列裝置200之遮光片220,係全部成為開啟。因此,通過遮光片陣列裝置200之反射光302,係在遮光片開口部304收歛且聚焦而成為光303。In this figure, a light shielding
圖3B,係表示除了一部分之遮光片220以外均關閉的狀態者。又,圖3C,係表示所有遮光片210均關閉的狀態者。如此一來,複數個遮光片210、220,係具有可分別獨立開關的構成。FIG. 3B shows a state in which all the
圖3D、3E及3F,係分別表示對應於圖3A、3B及3C之狀態的空間濾光片者。圖3D、3E及3F,係從遮光片220之上方或下方觀看的圖。3D, 3E and 3F respectively show the spatial filters corresponding to the states of FIGS. 3A, 3B and 3C. 3D, 3E and 3F are views viewed from above or below the
在該些圖中,遮光片關閉狀態211,係以黑色來表示,遮光片開啟狀態221,係以白色來表示。藉由對遮光片陣列裝置200之各像素個別地進行ON/OFF控制的方式,可構成複數種空間濾光片(空間遮罩)。另外,在圖3A、3B及3C中,遮光片陣列裝置200之遮光片210、220及微透鏡陣列106、107的透鏡,係雖被配置為3行3列,但此為一例,因應所需,亦可形成更大規模的矩陣。In these figures, the
以下,使用圖面,說明關於實施例。 實施例1Hereinafter, the embodiment will be described with reference to the drawings. Example 1
圖4A,係表示實施例1之遮光片陣列裝置的立體圖。FIG. 4A is a perspective view showing the light shielding sheet array device of the first embodiment.
本圖所示之遮光片陣列裝置200,係具有:遮光片陣列205;電極陣列206;及載架260(台座)。遮光片陣列205及電極陣列206,係具有基板201,並被固定於載架260。遮光片陣列205及電極陣列206,係分別為長方體形狀,且被設置於凹凸構造的斜面,該凹凸構造,係被設置於載架260。換言之,遮光片陣列205及電極陣列206,係被設置於載架260的斜面。藉此,遮光片陣列205及電極陣列206,係成為傾斜於載架260之底面的構成。The light-shielding
基板201,係以基板分割狹縫202來分割。The
遮光片陣列205及電極陣列206,係藉由導電性接著劑被接著固定於黏著面250,以確保電性導通。遮光片陣列205及電極陣列206,係分別藉由導電性接著劑被接著固定於載架配線261,以確保電性導通,該載架配線261,係被設置於載架260及黏著面251。另外,亦可使用導電性接著膜、銲錫等來代替導電性接著劑,或亦可利用使用了Au-Au、Cu-Cu、Cu-Sn等的金屬接合等來代替導電性接著劑。The light
在本圖中,係遮光片212(開關板)雖被配置成3行3列之矩陣狀,且其兩側分別各配置有3個電極陣列206,但本發明,係不限定於此,例如亦可為遮光片212與多數個電極陣列206一起被配置成30行30列之矩陣狀的構成。簡言之,複數個遮光片212相鄰配置。In this figure, although the light shielding sheet 212 (switch plate) is arranged in a matrix of 3 rows and 3 columns, and three
遮光片陣列205及電極陣列206,係1個的尺寸(長、寬、高)大致為1mm×3mm×1mm之長方體形狀。The size (length, width, height) of each of the light
圖4B,係表示1個遮光片陣列者。FIG. 4B shows one light-shielding sheet array.
在本圖中,遮光片陣列205,係具有:1個遮光片支撐部203,3個遮光片212被配置成一列;3個基板201;及絕緣層270,被設置於遮光片支撐部203與基板201之間。在相鄰的基板201之間,係設置有基板分割狹縫202a、202b。換言之,基板201,係以基板分割狹縫202a、202b來分割。絕緣層270,係與遮光片支撐部203相同地成為一體。藉由絕緣層270來絕緣遮光片支撐部203與基板201,並可對其各自施加不同的電壓。In this figure, the light-shielding
在本實施例中,遮光片212、遮光片支撐部203及基板201,係由矽(Si)所形成。另一方面,絕緣層270,係由二氧化矽(SiO2
)所形成。In this embodiment, the
圖4C,係表示1個電極陣列者。FIG. 4C shows one electrode array.
如本圖所示般,電極陣列206,係具有:3個電極板207,不具有遮光片;及3個基板201。在相鄰的基板201之間,係設置有基板分割狹縫202a、202b。換言之,基板201,係以基板分割狹縫202a、202b來分割。電極板207亦以狹縫204a、204b來分割。在電極陣列206,係設置有絕緣層。基板201與電極板207,係成為電性連接的構成。亦即,基板201及電極板207,係藉由基板分割狹縫202a、202b及狹縫204a、204b被分割成3個,並可對該些3個施加不同的電壓。另外,鄰接之基板201,係以絕緣性的接著劑來連接。藉此,電極板207可使用來作為用以連接基板201與外部的端子。As shown in this figure, the
如圖4A所示般,在遮光片支撐部203之端部,係連接有線組240。又,在電極板207,係連接有線組241。線組240、241,係藉由引線接合等來固定。藉此,為了進行遮光片212之開關動作,可設定為ON或OFF且施加電壓。As shown in FIG. 4A , a
圖5,係表示圖4A之B-B剖面者。FIG. 5 shows the B-B section of FIG. 4A.
在圖5中,在載架260,係設置有複數個垂直於載架260之底面的載架開口部263。而且,以使遮光片開口部264連通於各個載架開口部263的方式,設置有遮光片陣列205。遮光片開口部264,係相對於遮光片支撐部203的上面垂直地設置。In FIG. 5 , the
在本實施例中,載架開口部263之寬度,係700μm。載架開口部263之寬度,係期望100~1000μm。In this embodiment, the width of the
遮光片212,係在關閉之狀態(關閉遮光片223)下,成為平行於遮光片支撐部203的上面。另一方面,在遮光片212開啟之狀態(開啟遮光片213)下,遮光片角度280(張角)小於90度。The light-shielding
在載架260之上面,係設置有載架絕緣層262,並在載架絕緣層262的表面形成有載架配線261。載架配線261及載架絕緣層262,係亦被設置於遮光片陣列205與載架260之間及電極陣列206與載架260之間。載架配線261與基板201之電性連接,係使用導電性接著劑,經由基板底面232及基板側面233而進行。換言之,載架260,係具有與基板201電性連接的載架配線261。On the upper surface of the
藉此,可對各個基板201施加電壓。又,由於在載架260與載架配線261之間設置載架絕緣層262,因此,可防止在相鄰的載架配線261之間產生導通。Thereby, a voltage can be applied to each of the
如本圖所示般,在開啟遮光片213的狀態下,係張角未滿90度之遮光片212的下端部與對向於遮光片212的上面(圖中右側的面)之基板201的內壁面之間的距離在遮光片開口部264變得最小。As shown in this figure, when the light-shielding
而且,由於遮光片陣列205之基板201具有傾斜,因此,遮光片212之軸部突出至載架開口部263的上方。換言之,形成如下構成:遮光片212之軸部側的基板201之內壁面部分地覆蓋載架開口部263。而且,遮光片212之上面往下方延伸的面與對向於遮光片212之上面的基板201之內壁面的下端部之間的距離(遮光片212與基板201之內壁面的最小距離)小於載架開口部263及遮光片開口部264的寬度。亦即,遮光片陣列205之有效開口率變低。在此,有效開口率,係定義為以遮光片開口部264之寬度作為分母且以上述最小距離作為分子而算出的比率(百分比)。Moreover, since the
因此,期望通過載架開口部263及遮光片開口部264之光,係被調整成收斂於上述最小距離以下,且在載架開口部263或遮光片開口部264之寬度小的區域聚焦。期望光收斂時之角度(圖3A之反射光302及光303的縱剖面中之角度),係設成為反射光302及光303不碰撞基板201之內壁面及遮光片212的角度。Therefore, it is desirable that the light passing through the
因此,從有效開口率之觀點來看,係期望基板201的傾斜小,亦即遮光片開口部264相對於載架開口部263的傾斜小。Therefore, from the viewpoint of the effective aperture ratio, it is desirable that the inclination of the
另一方面,從降低遮光片212之軸部的應力之觀點來看,係期望將遮光片角度280調整成較小。On the other hand, from the viewpoint of reducing the stress of the shaft portion of the
從上述2個觀點來看,遮光片角度280,係期望在85度至60度的範圍內,更期望在80度至60度的範圍內,特別期望在75度至60度的範圍內。在此,上述範圍中之下限值「60度」的含義,係對應於期望將基板201之傾斜設成為0度的構成,亦即在將載架開口部263及遮光片開口部264之內壁面設成為平行的構成中,有效開口率為50%以上。從「當有效開口率成為未滿50%時,通過載架開口部263及遮光片開口部264之光的收斂程度成為問題與相鄰的遮光片開口部264之間隔變大等」的觀點來看,並不理想。From the above two viewpoints, the
另外,如圖5所示般,遮光片角度280,係只要遮光片212之上面平行於載架開口部263的內壁面則足夠,不需要比其角度大。因此,遮光片角度280,係可將從90度減去基板201之傾斜而得到的值作為上限值。In addition, as shown in FIG. 5, the
圖6,係表示圖4A之A-A剖面者。Fig. 6 shows the A-A section of Fig. 4A.
在圖6中,係表示開啟遮光片213及關閉遮光片223的狀態。In FIG. 6 , the state in which the light-shielding
圖7,係圖4A之載架260的上視圖。FIG. 7 is a top view of the
在本圖中,係包含被設置於載架260之凹凸構造的斜面,並以將與圖中橫方向相鄰的載架開口部263之上面緣部電性連接的方式,形成載架配線261。在相鄰的載架配線261之間,係被構成為與載架配線261平行地設置有絕緣部265,且不電性導通。
實施例2In this drawing, the
圖8,係表示實施例2之遮光片陣列裝置的剖面圖。FIG. 8 is a cross-sectional view showing the light-shielding sheet array device of the second embodiment.
在本圖所示之遮光片陣列裝置200中,係將基板201之高度設成為低於圖5所示的實施例1。其他構成,係與圖5相同。In the light-shielding
藉由降低基板201之高度的構成,可使相對於載架開口部263呈彎曲之遮光片開口部264的長度變短,且在開啟遮光片213時擴大光軸所通過的開口面積。又,即便進一步縮小遮光片212的張角,亦可確保開口面積。By reducing the height of the
另外,為了使載架配線261形成為適當之電路,且使遮光片支撐部203及遮光片212的電位變化,可藉由將線組等之配線連接於遮光片支撐部203的方式,省略電極陣列206。
實施例3In addition, in order to form the
圖9,係表示實施例3之遮光片陣列裝置的剖面圖。FIG. 9 is a cross-sectional view showing the light-shielding sheet array device of the third embodiment.
在本圖所示之遮光片陣列裝置200中,係與圖8所示的實施例2相同地,降低基板201的高度。In the light-shielding
在本圖中,係被配置為相鄰的遮光片陣列205之端部重疊。換言之,被配置為遮光片陣列205之基板201部分地覆蓋鄰接的遮光片陣列205之遮光片支撐部203的上方。在基板201與遮光片支撐部203重疊的部分,係設置有間隙290。電極陣列206亦以相同重疊的方式進行配置。由於設置有間隙290,因此,成為基板201與下方之遮光片支撐部203不接觸的構成。藉此,可確保絕緣並防止短路。另外,亦可夾入絕緣材料以代替設置間隙290。In this figure, the end portions of the adjacent light shielding
藉由以上構成,可較窄地設定相鄰的遮光片開口部264之間隔。其結果,可提高遮光片陣列205之集成度,且亦可增加空間濾光片的圖案。With the above configuration, the interval between the adjacent light-shielding
(比較例) 圖10A,係表示比較例之遮光片陣列者。(Comparative example) FIG. 10A shows the light-shielding sheet array of the comparative example.
本圖所示之遮光片212,係過度開啟的狀態,密接於基板201之內壁面282。在該情況下,有經附著之遮光片212不會從內壁面282脫離而無法獲得開關功能的疑慮。
實施例4The light-shielding
圖10B,係表示實施例4之遮光片陣列者。FIG. 10B shows the light-shielding sheet array of Example 4. FIG.
在本圖中,係在基板201之內壁面282設置凸部281,藉此,遮光片212之接觸成為一部分。藉此,在遮光片212開啟的狀態下,可不被加以固定。又,藉由凸部281,設定遮光片212之張角的上限值。In this figure, the
另外,在圖5等中,係雖表示「在遮光片212的關閉狀態下,遮光片陣列之上面與光軸斜向地交叉」的構成,但本發明,係亦可如圖10B所示般,設成為「在遮光片212的關閉狀態下,遮光片陣列之上面與光軸大致垂直地交叉」的構成。In addition, in FIG. 5 and the like, although the configuration of “in the closed state of the
圖10C,係從上面觀看本實施例之遮光片陣列的圖。FIG. 10C is a view of the light-shielding plate array of this embodiment viewed from above.
本圖所示之凸部281,係沿垂直方向設置2根,在開啟遮光片213時,以較小的面積支撐遮光片212。藉此,即便因過剩的電壓所引起之遮光片212的過度開啟、因裝置之平台的故障所引起之衝擊或振動、因地震等所引起之振動而發生其他異常事態且遮光片212的張角超過設定範圍,亦可防止遮光片212附著於基板201而無法移動的情形,並確保長期可靠性。
實施例5The
圖11,係表示實施例5之遮光片陣列者。FIG. 11 shows the light-shielding sheet array of the fifth embodiment.
在本圖中,係在遮光片212之下面的一部分設置凸部283。藉此,在遮光片212過度開啟的情況下,防止遮光片212附著於基板201而無法移動的情形。
實施例6In this figure, a
圖12A,係表示實施例6之遮光片陣列者。FIG. 12A shows the light-shielding sheet array of Example 6. FIG.
在本圖中,係相對於遮光片支撐部203之底面傾斜地形成基板201的遮光片開口部264。In this figure, the light-shielding plate opening 264 of the
圖12B,係表示將本實施例之遮光片陣列設置於載架的狀態者。FIG. 12B shows a state in which the light-shielding sheet array of this embodiment is installed on the carrier.
如本圖所示般,由於基板201之遮光片開口部264具有傾斜的形狀,因此,在將遮光片陣列205以預定角度設置於載架260的狀態下,係載架開口部263之內壁面成為與遮光片開口部264的內壁面大致平行。換言之,載架開口部263與遮光片開口部264大致平行地連通。藉此,可相對於光軸大致平行地配置載架開口部263及遮光片開口部264。As shown in this figure, since the light-shielding sheet opening 264 of the
藉此,可避免成為如以光軸作為基準而基板201之內壁面覆蓋載架開口部263般的構成,並可使遮光片陣列205的有效開口率提高。又,可縮小遮光片212的張角。In this way, a configuration in which the inner wall surface of the
由於在本實施例中,係遮光片開口部264的內壁面與遮光片支撐部203的內壁面並非平行,因此,吾人雖認為即便在遮光片212之張角成為最大的狀態下,遮光片212亦不會密接於遮光片開口部264的內壁面,但亦可設成為「設置圖10B之凸部281或圖11之凸部283,以確實地防止密接」的構成。In this embodiment, the inner wall surface of the
藉由本實施例之構成,可增大藉由微透鏡陣列而聚光於各個遮光片212的點徑,並可提高微透鏡陣列之設計裕度。又,該情形,係亦有助於削減微透鏡的成本。With the configuration of this embodiment, the spot diameter of the light-shielding
另外,本實施例之遮光片陣列,係在使用乾蝕刻裝置來蝕刻去除基板201的矽時,藉由傾斜基板201而設置於乾蝕刻裝置的方式來加以形成。
實施例7In addition, the light-shielding plate array of the present embodiment is formed by tilting the
圖13,係表示實施例7之遮光片陣列之細節的上視圖。FIG. 13 is a top view showing details of the light-shielding plate array of Example 7. FIG.
在本圖中,進行開關動作之遮光片2001,係經由扭力棒284(軸部)被支撐於構成同一平面的遮光片支撐部2002。遮光片2001,係在扭力棒284的中央部附近連接。在遮光片2001與遮光片支撐部2002之間,係設置有狹縫2003。又,在遮光片支撐部2002與扭力棒284之間,係設置有狹縫2004。In this figure, the light-
扭力棒284,係中心軸為直線狀,剖面為正方形狀、長方形狀、圓形狀、橢圓形狀等。在力學上,係雖期望為圓形狀,但從製造之容易度的觀點來看,係期望為正方形狀或長方形狀。The central axis of the
在遮光片2001開啟時,係在扭力棒284產生扭應力。當伴隨著施加電壓而產生的靜電力作用時,由於遮光片2001開啟,因此,產生扭應力。當停止施加電壓時,則靜電力消失而遮光片2001關閉且扭應力消失。如此一來,扭力棒284,係作為扭力棒彈簧(彈性體)而發揮功能。When the
簡言之,如本圖所示般,遮光片2001,係具有以扭力棒284作為軸部之單開門的構造。In short, as shown in this figure, the
當遮光片2001之張角達到90度時,則扭應力成為最大。因此,當考慮扭力棒284及其周邊之疲勞破壞等時,遮光片2001的張角,係期望小於90度。
實施例8When the opening angle of the
圖14,係表示實施例8之遮光片陣列之細節的上視圖。FIG. 14 is a top view showing details of the light-shielding plate array of Example 8. FIG.
在本圖中,進行開關動作之遮光片2001,係經由蜿蜒棒(meander bar)285(軸部)被支撐於構成同一平面的遮光片支撐部2002。在遮光片支撐部2002與蜿蜒棒285之間,係設置有狹縫2004。蜿蜒棒285,係例如中心軸為正弦波形狀,剖面為正方形狀、長方形狀、圓形狀、橢圓形狀等。In this figure, the light-
在遮光片2001開啟時,係在與「遮光片2001之旋轉軸方向(軸部之長邊方向)交叉的蜿蜒棒285之屈曲部所延伸」的方向產生應力。When the light-
藉由該構成,與使用圖13之扭力棒284的情形相比,可減低局部性之應力而使作為遮光片陣列的可靠性提高。According to this structure, compared with the case where the
其次,說明關於遮光片的驅動方式。Next, the driving method of the light shielding sheet will be described.
圖15,係示意地表示遮光片陣列的剖面者。FIG. 15 schematically shows a cross-section of the light-shielding sheet array.
在本圖中,經由遮光片支撐部203對遮光片212施加電壓,使其成為正電位(V1),對基板201施加電壓,使其成為負電位(V2)。藉由像這樣所產生之電位差,產生靜電力而遮光片212開啟。In this figure, a voltage is applied to the light-shielding
如本圖所示般,遮光片212的下面帶正電,基板201的內壁面282帶負電。藉此,遮光片212繞軸部旋轉,作為其結果,導致遮光片開啟。As shown in this figure, the lower surface of the
當停止施加電壓時,則藉由軸部之復原力返回到遮光片關閉的狀態。When the application of the voltage is stopped, it will return to the state where the shading sheet is closed by the restoring force of the shaft.
例如,在V1作為正電位而設成+10~100V、V2作為負電位而設成-10~-100V的情況下,施加之電壓,係20~200V。但是,亦因遮光片212的尺寸而變化,本發明並不限定於上述例子。For example, when V1 is set to +10 to 100V as a positive potential, and V2 is set to -10 to -100V as a negative potential, the applied voltage is 20 to 200V. However, the size of the
另外,在上述實施例中,係雖表示藉由組合遮光片陣列、電極陣列、載架等零件的方式而製作之遮光片陣列裝置,但本發明並不限定於像這樣的實施例,亦可藉由組合半導體製造工程中所使用之矽的表面氧化處理、光微影、蝕刻、蒸鍍、離子注入等的方式,形成相當於遮光片陣列、電極陣列、載架等的部分而不進行零件之組合來製作作為一體物的遮光片陣列裝置。In addition, in the above-mentioned embodiment, although the light-shielding plate array device fabricated by combining parts such as a light-shielding plate array, an electrode array, a carrier, etc. is shown, the present invention is not limited to such an embodiment. By combining the surface oxidation treatment, photolithography, etching, vapor deposition, ion implantation, etc. of silicon used in the semiconductor manufacturing process, the parts corresponding to the light-shielding plate array, electrode array, carrier, etc. are formed without making parts. The combination of the light-shielding plate array device as an integral body.
10:缺陷觀察裝置 20:光學顯微鏡 100:攝像元件 101:成像透鏡 102:接物透鏡 103:雷射光源 104:晶圓 106,107,1102:微透鏡陣列 108:缺陷 200,1101:遮光片陣列裝置 201:基板 202,202a,202b:基板分割狹縫 203,2002:遮光片支撐部 204a,204b:狹縫 205:遮光片陣列 206:電極陣列 207:電極板 211:遮光片關閉狀態 212,220,2001:遮光片 221:遮光片開啟狀態 240,241:線組 250,251:黏著面 260:載架 261:載架配線 263:載架開口部 264:遮光片開口部 265:絕緣部 270:絕緣層 281,283:凸部 282:內壁面 284:扭力棒 285:蜿蜒棒 290:間隙 303:光 304:遮光片開口部 300:光線 301,302:反射光 351:真空密封窗 352:反射鏡 1001:晶圓 1002:掃描型電子顯微鏡 1003:光學顯微鏡 1004:平台 1005:真空槽 1006:控制部 1007:終端 1008:記錄裝置 1009:網路 1010:雷射光源 1013:接物透鏡 1015:成像透鏡 1016:攝像元件 1018:平台控制電路 1019:SEM攝像系統控制電路 1020:圖像處理電路 1021:外部輸出入介面 1022:中央演算部 1023:記憶體 2003,2004:狹縫10: Defect observation device 20: Optical Microscopy 100: camera element 101: Imaging Lens 102: objective lens 103: Laser light source 104: Wafer 106, 107, 1102: Microlens Arrays 108: Defect 200,1101: Shade array device 201: Substrate 202, 202a, 202b: Substrate Dividing Slits 203, 2002: Shading sheet support 204a, 204b: Slit 205: Shade Array 206: Electrode Array 207: Electrode plate 211: The shutter is closed 212, 220, 2001: Shades 221: The shading sheet is on 240, 241: Line group 250,251: Adhesive side 260: Carrier 261: Carrier wiring 263: Carrier opening 264: Shading sheet opening 265: Insulation 270: Insulation layer 281, 283: convex part 282: inner wall surface 284: Torsion Bar 285: Snaking Rod 290: Clearance 303: Light 304: Shading sheet opening 300: light 301, 302: Reflected Light 351: Vacuum Sealed Windows 352: Reflector 1001: Wafer 1002: Scanning Electron Microscopy 1003: Optical Microscopy 1004: Platform 1005: Vacuum tank 1006: Control Department 1007: Terminal 1008: Recording Device 1009: Internet 1010: Laser light source 1013: objective lens 1015: Imaging Lenses 1016: Camera Components 1018: Platform Control Circuit 1019: SEM camera system control circuit 1020: Image Processing Circuits 1021: External I/O 1022: Central Computing Department 1023: Memory 2003, 2004: The Slit
[圖1]表示實施形態之缺陷觀察裝置的示意構成圖。 [圖2]表示圖1之缺陷觀察裝置之缺陷檢測部即光學顯微鏡的示意構成圖。 [圖3A]表示遮光片陣列裝置及微透鏡陣列的示意放大圖。 [圖3B]表示構成圖3A之遮光片陣列裝置的遮光片除了一部分被關閉之狀態的示意放大圖。 [圖3C]表示構成圖3A之遮光片陣列裝置的遮光片全部已關閉之狀態的示意放大圖。 [圖3D]表示與圖3A之遮光片陣列裝置的狀態對應之空間濾光片的圖。 [圖3E]表示與圖3B之遮光片陣列裝置的狀態對應之空間濾光片的圖。 [圖3F]表示與圖3C之遮光片陣列裝置的狀態對應之空間濾光片的圖。 [圖4A]表示實施例1之遮光片陣列裝置的立體圖。 [圖4B]表示1個遮光片陣列的立體圖。 [圖4C]表示1個電極陣列的立體圖。 [圖5]圖4A之B-B剖面圖。 [圖6]圖4A之A-A剖面圖。 [圖7]圖4A之載架的上視圖。 [圖8]表示實施例2之遮光片陣列裝置的剖面圖。 [圖9]表示實施例3之遮光片陣列裝置的剖面圖。 [圖10A]表示比較例之遮光片陣列的剖面圖。 [圖10B]表示實施例4之遮光片陣列的剖面圖。 [圖10C]表示實施例4之遮光片陣列的上視圖。 [圖11]表示實施例5之遮光片陣列的剖面圖。 [圖12A]表示實施例6之遮光片陣列的剖面圖。 [圖12B]表示將實施例6之遮光片陣列設置於載架之狀態的剖面圖。 [圖13]表示實施例7之遮光片陣列之細節的上視圖。 [圖14]表示實施例8之遮光片陣列之細節的上視圖。 [圖15]表示一實施形態之遮光片陣列的示意剖面圖。1 is a schematic configuration diagram showing a defect observation apparatus according to an embodiment. [ Fig. 2] Fig. 2 is a schematic configuration diagram showing an optical microscope, which is a defect detection unit of the defect observation apparatus of Fig. 1 . [ Fig. 3A ] A schematic enlarged view showing a light shielding plate array device and a microlens array. [ Fig. 3B ] A schematic enlarged view showing a state except that a part of the light-shielding plate constituting the light-shielding plate array device of Fig. 3A is closed. [ Fig. 3C ] A schematic enlarged view showing a state in which all the light-shielding plates constituting the light-shielding plate array device of Fig. 3A are closed. [ FIG. 3D ] A diagram showing a spatial filter corresponding to the state of the light shielding plate array device of FIG. 3A . [ Fig. 3E ] A diagram showing a spatial filter corresponding to the state of the light-shielding plate array device of Fig. 3B . [ FIG. 3F ] A diagram showing a spatial filter corresponding to the state of the light shielding plate array device of FIG. 3C . 4A is a perspective view showing the light-shielding sheet array device of Example 1. FIG. [ Fig. 4B ] A perspective view showing one light-shielding sheet array. [ Fig. 4C ] A perspective view showing one electrode array. [FIG. 5] B-B sectional view of FIG. 4A. [Fig. 6] A-A sectional view of Fig. 4A. [Fig. [Fig. 7] A top view of the carrier of Fig. 4A. 8 is a cross-sectional view showing a light-shielding sheet array device of Example 2. FIG. 9] Fig. 9 is a cross-sectional view showing a light-shielding sheet array device of Example 3. [Fig. 10A is a cross-sectional view showing a light-shielding sheet array of a comparative example. FIG. 10B is a cross-sectional view showing the light-shielding sheet array of Example 4. FIG. [FIG. 10C] A top view showing the light-shielding sheet array of Example 4. [FIG. 11 is a cross-sectional view showing a light-shielding sheet array of Example 5. FIG. 12A is a cross-sectional view showing the light-shielding sheet array of Example 6. FIG. [ Fig. 12B ] A cross-sectional view showing a state in which the light-shielding sheet array of Example 6 is installed on a carrier. [FIG. 13] A top view showing details of the light-shielding sheet array of Example 7. [FIG. [FIG. 14] A top view showing details of the light-shielding sheet array of Example 8. [FIG. [ Fig. 15] Fig. 15 is a schematic cross-sectional view showing a light-shielding sheet array according to an embodiment.
200:遮光片陣列裝置 200: Shade array device
201:基板 201: Substrate
203:遮光片支撐部 203: Shading sheet support
205:遮光片陣列 205: Shade Array
206:電極陣列 206: Electrode Array
207:電極板 207: Electrode plate
212:遮光片 212: Shades
213:開啟遮光片 213: Open the shade
223:關閉遮光片 223: Close the shade
232:基板底面 232: Bottom surface of substrate
233:基板側面 233: Substrate side
241:線組 241: Line Group
251:黏著面 251: Adhesive Noodles
260:載架 260: Carrier
261:載架配線 261: Carrier wiring
262:載架絕緣層 262: Carrier insulation
263:載架開口部 263: Carrier opening
264:遮光片開口部 264: Shading sheet opening
280:遮光片角度 280: shade angle
Claims (18)
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EP0246547A3 (en) * | 1986-05-22 | 1990-06-13 | Siemens Aktiengesellschaft | Optical image-processing arrangement |
US5784190A (en) * | 1995-04-27 | 1998-07-21 | John M. Baker | Electro-micro-mechanical shutters on transparent substrates |
JPH1039239A (en) * | 1996-07-18 | 1998-02-13 | Ricoh Co Ltd | Spatial light modulation element |
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