TW202145295A - 基板處理設備 - Google Patents

基板處理設備 Download PDF

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TW202145295A
TW202145295A TW110119511A TW110119511A TW202145295A TW 202145295 A TW202145295 A TW 202145295A TW 110119511 A TW110119511 A TW 110119511A TW 110119511 A TW110119511 A TW 110119511A TW 202145295 A TW202145295 A TW 202145295A
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substrate
process chamber
shutter
control electrode
substrate processing
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黃喆周
全富一
崔星赫
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南韓商周星工程股份有限公司
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Abstract

一種基板處理設備，包含製程腔體、基座、氣體噴射器、閥體以及控制電極。製程腔體提供位於其中的反應空間並包含供基板進出的基板入口。基座設置於製程腔體的內部並支撐基板。氣體噴射器設置於相對表面上以將氣體朝基板噴射。閥體開啟及關閉基板入口。控制電極形成於閥體上。控制電極被垂直地驅動。

Description

基板處理設備
本發明關於一種電漿基板處理設備，特別係關於一種能在均勻的製程環境中提供製程腔體的整個反應空間的一種基板處理設備。
典型的基板處理設備例如可包含製程腔體及傳送腔體。在此製程腔體中，會利用電漿或其他類似物處理基板。在此傳送腔體中，會在處理基板之前裝載基板並在處理基板之後卸載基板。
對於製程腔體來說，一個側壁上會形成有狹槽(slot)且可透過此狹槽裝載或卸載基板。一般來說，可透過位於狹槽外側或腔體外側的狹槽閥體(slot valve)開啟及關閉狹槽。
在執行基板處理作業時，製程腔體的內部(即反應空間)需要維持在製程環境，如真空狀態或其他類似的狀態。此外，需要對整個反應空間施加均勻的製程環境。
一般來說，反應空間具有連通於供基板裝載或卸載的狹槽之開口，且狹槽藉由外部狹槽閥體開啟及關閉。因此，即使是在狹槽藉由外部狹槽閥體關閉的時候，仍會在狹槽閥體及開口之間形成空的空間(empty space)。
閒置空間可連通於反應空間。因此，反應空間可能經由真空空間不對稱地形成。不對稱的反應空間難以建立整體均勻的製程環境。
當反應空間中產生電漿時，可能會因閒置空間的影響而難以均勻地將電漿散佈在反應空間中。因此，可能會難以均勻地在基板的整個表面上進行蝕刻及沉積。
在沉積有電漿薄膜的情況中，薄膜均勻度可能會被各種因素影響，如腔體的結構對稱性、基板的溫度不均勻性(temperature non-uniformity)、幫浦形成的氣流流動型式(gas flow pattern)、電漿不均勻度(plasma non-uniformity)及其他相似的因素。具體地，局部電漿不均勻性可能會受腔體的電性特性及結構不對稱性以及由幫浦形成的氣流流動型式所影響。
在電漿製程中，即使採用內側面形成腔體的內側面之部分的閥體來提升結構方位角對稱性(structural azimuthal symmetry)，仍會存在局部處理不均勻性(local process non-uniformity)之問題。舉例來說，在沒有閥體的情況中，腔體的內部為完全對稱的環境。然而，必須設置基板入口的需求使得腔體的完全對稱難以達成。也就是說，即使閥體提供形成腔體的內側面之部分的曲面，也可能難以達成百分之百的對稱，這是因為會有密封環(O-ring)形成閥體及腔體彼此接觸的部分之緣故。此外，因為閥體的電性特性及腔體的電性特性彼此不同，所以射頻電流(RF current)不會對稱地沿方位角方向(azimuthal direction)流動，進而造成局部處理不均勻性之問題。因此，需要一種能控制由電性特性之差異造成的局部不均勻性之方法。
本發明之一態樣在於藉由插設控制電極使控制電極鄰近於腔體的內壁，以將電力施加至控制電極，進而控制基板的局部處理不均勻性。
本發明之一態樣在於藉由在基板上進行電漿半導體製程時使用腔體整合狹槽閥體(chamber-integrated slot valve)防止反應空間連通至狹槽，而在反應空間中提供均勻的製程環境。此外，使用形成在狹槽閥體之開關閘板(open/close blade)的控制電極來控制其餘的局部處理不均勻性。
本發明之一態樣在於在基板上進行半導體製程的時候對稱地形成基板處理設備的反應空間，並藉由使電漿製程環境在反應空間中是均勻的而均勻地在基板的整個表面上進行處理。
本發明之一態樣在於藉由插設提供形成腔體的內側面之部分的曲面的閥體，並將閥體連接至阻抗電路以改變電性特性而控制基板的局部處理不均勻性。
根據一示例性實施例的基板處理設備包含製程腔體、基座、氣體噴射器、閥體以及控制電極。製程腔體提供位於其中的反應空間並包含基板進入或退出會經過的基板入口。基座設置於製程腔體的內部並支撐基板。氣體噴射器設置於相對表面上以將氣體朝基板噴射。閥體開啟及關閉基板入口。控制電極形成於閥體上。於一示例性實施例中，控制電極可被垂直地驅動。
於一示例性實施例中，閥體可包含閘板以及驅動單元。閘板開啟及關閉基板入口並具有形成製程腔體的內側面之部分的內側面。驅動單元使閘板能上升及下降。控制電極形成於閘板上。
於一示例性實施例中，閘板可藉由第一開關被接地或連接至阻抗電路。
於一示例性實施例中，阻抗電路可包含彼此並聯的多個電感電容電路或彼此串聯的多個電感電容電路。構成電感電容電路的電容器可以是可變的。
於一示例性實施例中，控制電極可連接於電源供應器。
於一示例性實施例中，電源供應器可包含正直流電力源、負直流電力源及射頻電力源中的至少一者。
於一示例性實施例中，基板處理設備可更包含第二開關。第二開關用以將電源供應器或接地處及控制電極彼此連接。第二開關可選擇性地連接於正直流電力源、該負直流電力源及該射頻電力源中的一者。
根據一示例性實施例的基板處理設備包含製程腔體、基座、氣體噴射器以及閥體。製程腔體提供位於其中的反應空間。基座設置於製程腔體的內部並支撐基板。氣體噴射器設置於基座的相對表面上以將氣體朝基板噴射。閥體提供形成製程腔體的內側面的部分之內側面並開啟及關閉製程腔體的基板入口。閥體包含閘板以及驅動單元。閘板開啟及關閉基板入口並具有形成製程腔體的內側面之部分的內側面。驅動單元使閘板能上升及下降。閘板藉由開關被接地或連接至阻抗電路。
根據一示例性實施例的基板處理設備可包含製程腔體、形成在製程腔體的側壁上之基板入口以及用於開啟及關閉基板入口的閥體。閥體可包含用於開啟及關閉基板入口的閘板以及使閘板能上升及下降的驅動單元。閘板可在製程腔體的底面以及基板入口之間提供製程腔體的內側面。也就是說，閘板可提供形成製程腔體的內側面之部分的內側面。因此，閘板的內側面及製程腔體的內側面可連續地連接以提升結構對稱性。結構對稱性可提供氣體的排放及流動之對稱性以提升處理均勻度。
在製程中，汙染物可能會沉積在閘板的內側面上。隨著閘板上升及下降，汙染物也會從閘板脫附(desorbed)而產生微粒。當微粒黏著至製程腔體中的基板時，微粒可能會造成元件缺陷(component defect)。
此外，當製程腔體中產生電漿時，製程腔體可維持在預設溫度及電性接地的狀態。閘板可無需電性連接於製程腔體且可使用插設於閘板及製程腔體之間的密封手段(如密封環)接觸於製程腔體。因此，閘板可提供相異於製程腔體的電性特性之電性特性，以提供局部不同的電漿特性。
因此，需要抑制汙染物沉積在閘板上的情形並控制閘板的電性特性。閘板上的汙染物可藉由電漿離子的入射被濺出(sputter)進而被移除。控制電極可形成於閘板的內側面上，且直流電力(DC power)或射頻電力(RF power)可被供應至控制電極。當正的直流電壓(DC voltage)被施加到控制電極時，在反應空間中擴散的電漿之陽離子(cations)可被排斥以抑制汙染物沉積並改變局部電漿特性。當負的直流電壓被施加到控制電極時，在反應空間中擴散的電漿之陽離子可被吸引，而使汙染物被濺出以抑制汙染物沉積並改變局部電漿特性。當射頻電力被施加到控制電極時，控制電極的表面上可產生額外的電漿以濺出汙染物並改變局部電漿特性。
當基座(susceptor)位於製程腔體的中心時，被供給射頻電力的基座以及接地的氣體噴射器可彼此面對並可形成主要電容器，而基座及製程腔體的壁體可形成寄生電容器。當閘板被放置於製程腔體的側壁上時，可能會發生寄生電容器的方位角不對稱。也就是說，基座及接地的製程腔體之側壁之間的寄生阻抗之變化是依據方位角(azimuthal angle)所產生。寄生阻抗這樣的變化可能會影響流過寄生電容器的射頻電流。射頻電流可能會影響電漿密度分佈而造成電漿密度的方位角不均勻性。為了克服由寄生阻抗造成的電漿密度之方向性不均勻性，可將直流電力或射頻電力施加到刻意設置在閘板上的控制電極。舉例來說，當電漿密度因閘板的寄生阻抗或是其他類似的原因而在閘板的方向上局部地為低的時，負的直流電壓可被施加至控制電極。當負電壓低到幾伏特的程度時，帶有(charge)負直流電壓的控制電極可吸引或排斥陽離子以控制局部電壓密度不均勻性。
另一方面，當電漿密度因閘板的寄生阻抗或其他類似的原因而在閘板的方向中局部地為高的時，正電壓可被施加至控制電極。帶有正電壓的控制電極可吸引或排斥陽離子以控制局部電漿密度非均勻性。
當射頻電力被施加至控制電極時，控制電極可作為新的電漿源運作以控制電漿密度不均勻性。
根據一示例性實施例，閘板可被接地或連接於阻抗電路。阻抗電路可包含彼此並聯或串聯的電感電容電路(LC circuits)。阻抗電路的電容器可阻礙直流電流(direct current)從閘板流到接地處。此外，阻抗電路的電容器可供射頻電流通過。阻抗電路的電感器可供與電容器具有相對相位的射頻電流通過。因此，阻抗電路可改變閘板及接地處之間的阻抗以局部地改變電漿特性。
以下，將參照圖式更完整地說明本發明的實施例。然而，本發明可用不同的形式實施且並不以於此闡述的實施例為限。這些實施例反而是被提供來使本發明更透徹及完整且將完整地傳達本發明之範圍給本領域具通常知識者。
圖1為根據本發明一示例性實施例的基板處理設備之立體圖。
圖2為基板處理設備沿圖1中的割面線A-A'繪示的剖面示意圖。
圖3為圖1中的基板處理設備之示意圖。
請參閱圖1至圖3，基板處理設備100可包含製程腔體110、基座150、氣體噴射器160、閥體以及控制電極。製程腔體110提供位於其中的反應空間110a並包含供基板152進出的基板入口112。基座150設置於製程腔體110的內部並支撐基板152。氣體噴射器160設置於相對表面上以將氣體朝基板152噴射。閥體開啟及關閉基板入口112。控制電極形成於閥體上。
基板處理設備100可進行沉積製程或蝕刻製程。
製程腔體110可形成具有位於其至少一側壁上的基板入口112之反應空間110a。製程腔體110可具有立方形外形，且反應空間110a可具有圓柱狀結構。製程腔體110可具有底面111b以及側壁111a。
氣體噴射器160可設置於製程腔體110的開放頂面上。氣體噴射器160可作為腔體蓋運作。氣體噴射器160可被提供有射頻電力以產生電漿。製程腔體110可透過幫浦169排氣。製程腔體110可被電性接地。
基板入口112可穿過製程腔體110的側壁以連接於反應空間110a。基板入口112可連續地連接於設置有閘板121的開口113。閘板121可在上升及下降的同時開啟及關閉基板入口112。基板入口112可提供製程腔體110的結構不對稱性。
氣體噴射器160可包含多個噴嘴且可將從氣體供應單元164提供的氣體噴射到反應空間110a中。氣體噴射器160可外部地接收射頻電力以產生電漿。第一射頻電力源162可透過第一阻抗匹配網路(impedance matching network)(未繪示)將射頻電力供應至氣體噴射器160。
基座150可包含承載有基板152且將基板152加熱至預設溫度的加熱單元(未繪示)。基座150可垂直地上升及下降。基座150可包含用於固定基板152的靜電吸盤(electrostatic chuck)(未繪示)。此外，基座150可外部地接收射頻電力以產生電漿且可調整入射在基板152上的能量。第二射頻電力源166可透過第二阻抗匹配網路(未繪示)將射頻電力供應至基座150。
閥體120可設置於製程腔體110的內側面上以開啟及關閉基板入口112。閥體120可抑制製程腔體110的結構不對稱性。
閥體120可包含開啟及關閉基板入口112的閘板121以及使閘板121能上升及下降的驅動單元129。驅動單元129可連接於側壁或製程腔體110的底面以受獨立的殼體支撐。閘板121可被插設到形成在製程腔體110的側壁中的開口113中，以提供形成製程腔體110的內側面的部分之內側面122a。
閘板121可被接地或連接於阻抗電路184。阻抗電路184可包含彼此並聯或串聯的電感電容電路。
當阻抗電路184包含彼此串聯的電容器及電感器時，阻抗電路184的阻抗在驅動頻率為最小值，且阻抗電路184可構成共振電路。具有最小的阻抗之阻抗電路184可增加流過閘板121的射頻電流，且閘板可穩定地被接地以使電漿穩定。也就是說，閘板121可由阻抗電路184控制以與製程腔體110的內壁具有相同的電性特性。阻抗電路184可為電感電容串聯共振電路(LC series resonant circuit)而使得閘板121所提供的電性特性相同於製程腔體的內壁在沒有受到汙染的狀態中所提供的電性特性。
另一方面，當阻抗電路184包含彼此並聯的電容器及電感器時，阻抗電路184的阻抗在驅動頻率為最大值，且阻抗電路184可構成共振電路。因此，阻抗電路184可增加閘板121及接地處之間的阻抗，以減少流過閘板121的射頻電流，而使得大量的射頻電流可流過製程腔體110的壁體。因此，電漿特性可被局部地改變。阻抗電路184可為電感電容並聯共振電路(LC parallel resonant circuit)而使得閘板121所提供的電性特性相同於製程腔體的內壁在被嚴重汙染的狀態下所提供的電性特性。
第一開關182可選擇性地接地或是連接於第一阻抗電路184。阻抗電路184的電容器可改變，且可調整從閘板121流到接地處的射頻電流。阻抗電路184可改變接地處及閘板121之間的阻抗以改變局部電漿特性。
閘板121可無須電性連接於製程腔體110且可使用插設於閘板121及製程腔體110之間的密封手段(如密封環)接觸於製程腔體110。因此，閘板121可提供不同於製程腔體110的電性特性之電性特性以提供局部相異的電漿特性。閘板121可接地或透過阻抗電路184連接於接地處，以藉由閘板121控制電漿特性。
控制電極130可形成於閘板121的內側面122a上。控制電極130可透過閘板121及用於絕緣的絕緣層132佈置(arrange)。控制電極130可沿內側面122a的方位角方向形成以具有圓弧形帶狀的外形。控制電極130可鄰設於開口113的頂面以與反應空間中的電漿相互作用。控制電極130的面積可比製程腔體110的壁體的面積小了十分之好幾或更少。在此情況中，施加到控制電極的電壓可在幾乎不會影響電漿電位(plasma potential)的情況下改變局部電漿密度分佈。
直流電源174、接地處或射頻電源176可透過第二開關172選擇性地連接於控制電極130。直流電源174可為正直流電源或負直流電源。
在製程中，汙染物可能會沉積在閘板121的內側面上。汙染物可能會隨著閘板121上升及下降而脫附，進而產生微粒。當微粒附著至製程腔體中的基板時，微粒可造成元件缺陷。
因此，需要抑制汙染物在閘板121上沉積的情況並藉由閘板121控制電性特性。
直流電力或射頻電力可被施加至控制電極130。當正的直流電壓被施加到控制電極130時，在反應空間110a中擴散的電漿中之陽離子可被排斥以抑制汙染物沉積或改變局部電漿特性。當負的直流電壓被施加至控制電極130時，在反應空間110a中擴散的電漿中之陽離子可被吸引而使得汙染物被濺出以抑制汙染物沉積或改變局部電漿特性。當射頻電力被施加至控制電極130時，可在控制電極130的表面上產生獨立的電漿以濺出汙染物或改變局部電漿特性。因此，可提升電漿的方位角對稱性且可增加基板處理均勻度。
圖4為根據本發明另一示例性實施例的基板處理設備之示意圖。
請參閱圖4，基板處理設備100a可包含製程腔體110、基座150、氣體噴射器160及控制電極230。製程腔體110提供位於其中的反應空間110a。基座150設置於製程腔體110之內部並支撐基板152。氣體噴射器160設置於基座150的相對表面上以將氣體朝基板152噴射。控制電極230位置上形成於基座150之外部或是形成製程腔體110的內側面的部分之曲面上。
控制電極230可形成於獨立的控制電極支撐單元232上，而不是閘板121的內側面122a，且位置上可設置於基座150的外部。控制電極230的外形可相同於圖1中繪示的外形。控制電極230可在位置上設置成與閘板121互見。控制電極支撐單元232可相對旋轉手段(未繪示)沿方位角方向旋轉使基板152進入或退出，且可接著再次旋轉對齊以與閘板121互見而進行一製程。
如上所述，根據一示例性實施例的基板處理設備可使用控制電極給腔體的整個反應空間提供均勻的環境，且可抑制微粒的生成。
此外，提供形成腔體的內側面之部分的曲面的閥體可被插設及連接至阻抗電路以改變電性特性。因此，基板處理設備可控制基板的局部處理不均勻性。
雖然已經詳細描述本發明及本發明的優點，但應理解的是，在沒有偏離以下的請求項所界定之本發明的精神及範圍的前提下，當可進行各種改變、替換及替代。
100:基板處理設備 110:製程腔體 110a:反應空間 111a:側壁 111b:底面 112:基板入口 113:開口 120:閥體 121:閘板 122a:內側面 129:驅動單元 130:控制電極 132:絕緣層 150:基座 152:基板 160:氣體噴射器 162:第一射頻電力源 164:氣體供應單元 166:第二射頻電力源 169:幫浦 172:第二開關 174:直流電源 176:射頻電源 182:第一開關 184:阻抗電路 230:控制電極 232:控制電極支撐單元
在閱讀實施方式及所附的圖式之後本發明將變得顯而易見。於此描述的實施例僅為示例性的而不旨在限制，且相似的標號表示相同或相似的元件。圖式並非用於界定尺寸(scale)及強調而是用於說明本發明的態樣。 圖1為根據本發明一示例性實施例的基板處理設備之立體圖。 圖2為基板處理設備沿圖1中的割面線A-A'繪示的剖面示意圖。 圖3為圖1中的基板處理設備之示意圖(conceptual diagram)。 圖4為根據本發明另一示例性實施例的基板處理設備之示意圖。
100:基板處理設備
110:製程腔體
110a:反應空間
111a:側壁
111b:底面
120:閥體
129:驅動單元
130:控制電極
152:基板

Claims (9)

  1. 一種基板處理設備，包含：一製程腔體，提供位於其中的一反應空間並包含一基板進入或退出會通過的一基板入口；一基座，設置於該製程腔體的內部並支撐該基板；一氣體噴射器，設置於一相對表面上以將一氣體朝該基板噴射；一閥體，開啟及關閉該基板入口；以及一控制電極，形成於該閥體上。
  2. 如請求項1所述之基板處理設備，其中該控制電極被垂直地驅動。
  3. 如請求項1所述之基板處理設備，其中該閥體包含：一閘板，開啟及關閉該基板入口並具有形成該製程腔體的一內側面之部分的一內側面；以及一驅動單元，使該閘板能上升及下降，並且其中，該控制電極形成於該閘板上。
  4. 如請求項3所述之基板處理設備，其中該閘板藉由一第一開關選擇性地接地或連接至一阻抗電路。
  5. 如請求項4所述之基板處理設備，其中該阻抗電路包含彼此並聯的多個電感電容電路或彼此串聯的多個電感電容電路，並且構成該電感電容電路的一電容器為可變的。
  6. 如請求項1所述之基板處理設備，其中該控制電極連接於一電源供應器。
  7. 如請求項6所述之基板處理設備，其中該電源供應器包含一正直流電力源、一負直流電力源及一射頻電力源中的至少一者。
  8. 如請求項7所述之基板處理設備，更包含：一第二開關，用以將該電源供應器或一接地處及該控制電極彼此連接，其中，該第二開關選擇性地連接於該正直流電力源、該負直流電力源及該射頻電力源中的一者。
  9. 一種基板處理設備，包含：一製程腔體，提供位於其中的一反應空間；一基座，設置於該製程腔體的內部並支撐一基板；一氣體噴射器，設置於該基座的一相對表面上以將一氣體朝該基板噴射；以及一閥體，提供形成該製程腔體的一內側面的部分之一內側面並開啟及關閉該製程腔體的一基板入口，其中，該閥體包含：一閘板，開啟及關閉該基板入口並具有形成該製程腔體的該內側面之部分的一內側面；以及一驅動單元，使該閘板能上升及下降，並且其中，該閘板藉由一開關選擇性地被接地或連接至一阻抗電路。
TW110119511A 2020-05-29 2021-05-28 基板處理設備 TW202145295A (zh)

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