TW202142674A - 量子點構造體及量子點構造體之製造方法 - Google Patents
量子點構造體及量子點構造體之製造方法 Download PDFInfo
- Publication number
- TW202142674A TW202142674A TW110112307A TW110112307A TW202142674A TW 202142674 A TW202142674 A TW 202142674A TW 110112307 A TW110112307 A TW 110112307A TW 110112307 A TW110112307 A TW 110112307A TW 202142674 A TW202142674 A TW 202142674A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- quantum dot
- film
- barrier
- buffer layer
- Prior art date
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 229
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 144
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 47
- 239000001301 oxygen Substances 0.000 claims abstract description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 40
- 239000000203 mixture Substances 0.000 claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 claims description 69
- 239000007789 gas Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 58
- 238000005192 partition Methods 0.000 claims description 27
- 229910052793 cadmium Inorganic materials 0.000 claims description 11
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 8
- 230000035515 penetration Effects 0.000 claims description 7
- 230000006866 deterioration Effects 0.000 abstract description 2
- 230000008595 infiltration Effects 0.000 abstract 1
- 238000001764 infiltration Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 118
- 230000007246 mechanism Effects 0.000 description 24
- 239000010409 thin film Substances 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 12
- 239000002994 raw material Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000593 degrading effect Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001678 elastic recoil detection analysis Methods 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007539 photo-oxidation reaction Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optical Filters (AREA)
- Liquid Crystal (AREA)
- Laminated Bodies (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020-082430 | 2020-05-08 | ||
| JP2020082430A JP2021177217A (ja) | 2020-05-08 | 2020-05-08 | 量子ドット構造体および量子ドット構造体の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202142674A true TW202142674A (zh) | 2021-11-16 |
Family
ID=78409439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110112307A TW202142674A (zh) | 2020-05-08 | 2021-04-06 | 量子點構造體及量子點構造體之製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2021177217A (ja) |
| TW (1) | TW202142674A (ja) |
| WO (1) | WO2021225017A1 (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114241896B (zh) * | 2021-12-14 | 2024-03-19 | 广州华星光电半导体显示技术有限公司 | 量子点膜及其制作方法、背光模组以及显示装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040166327A1 (en) * | 2003-02-20 | 2004-08-26 | Makoto Utsumi | Color conversion filter substrate, color conversion type multicolor display having the same, and method of manufacturing the same |
| CN111326646A (zh) * | 2014-12-26 | 2020-06-23 | Ns材料株式会社 | 波长转换构件 |
| EP3374984B1 (en) * | 2015-12-23 | 2019-10-23 | Avantama AG | Display device |
| CN106257697A (zh) * | 2016-08-31 | 2016-12-28 | 张家港康得新光电材料有限公司 | 一种量子点膜及其制备方法 |
| WO2018060929A1 (en) * | 2016-09-28 | 2018-04-05 | Sabic Global Technologies B.V. | Quantum dot film and applications thereof |
| KR101958721B1 (ko) * | 2017-11-28 | 2019-03-15 | 한국생산기술연구원 | 색변환 패널, 그를 포함하는 표시 장치 및 그의 제조방법 |
| WO2019186727A1 (ja) * | 2018-03-27 | 2019-10-03 | 日立化成株式会社 | 波長変換部材、バックライトユニット、及び画像表示装置 |
-
2020
- 2020-05-08 JP JP2020082430A patent/JP2021177217A/ja active Pending
-
2021
- 2021-02-10 WO PCT/JP2021/005092 patent/WO2021225017A1/ja active Application Filing
- 2021-04-06 TW TW110112307A patent/TW202142674A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021225017A1 (ja) | 2021-11-11 |
| JP2021177217A (ja) | 2021-11-11 |
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