TW202142101A - Substrate processing device, jig, calibration method for substrate processing device, and method for manufacturing semiconductor device - Google Patents

Substrate processing device, jig, calibration method for substrate processing device, and method for manufacturing semiconductor device Download PDF

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TW202142101A
TW202142101A TW110106025A TW110106025A TW202142101A TW 202142101 A TW202142101 A TW 202142101A TW 110106025 A TW110106025 A TW 110106025A TW 110106025 A TW110106025 A TW 110106025A TW 202142101 A TW202142101 A TW 202142101A
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port
measuring device
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temperature measuring
jig
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TWI834024B (en
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坂下恵介
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日商國際電氣股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

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Abstract

Provided is an invention that has: a processing container in which a substrate is processed; a port that, inside the processing container, forms an opening through which a temperature-measuring instrument having a protective tube is inserted facing upward; and a non-metal jig that covers the inner surface of the opening of the port, and is formed in a cylindrical shape that can be mounted in the port from inside the processing container. The jig inserted in the port is configured to be able to move up and down together with the temperature-measuring instrument when the temperature-measuring instrument is mounted in the port.

Description

基板處理裝置、治具、基板處理裝置之校正方法及半導體裝置之製造方法Substrate processing device, jig, calibration method of substrate processing device, and manufacturing method of semiconductor device

本發明係關於基板處理裝置、治具、基板處理裝置之校正方法及半導體裝置之製造方法。The present invention relates to a substrate processing device, a jig, a calibration method of the substrate processing device, and a manufacturing method of a semiconductor device.

在半導體裝置(IC等)之製造中,為了對基板進行熱處理,廣泛地使用有批次式直立型的熱處理裝置。於習知之此種熱處理裝置的處理爐中,將搭載有複數個片晶圓的晶舟從下方插入上端封閉且下端被開放之大致圓筒形之直立式反應管的內部,藉由被設置為包圍反應管之外側的加熱器,來對晶舟上的晶圓進行熱處理。在晶舟上,複數個片晶圓以水平姿勢且晶圓之中心相互地對齊之狀態多層積層而被保持。In the manufacture of semiconductor devices (IC, etc.), in order to heat-treat substrates, batch-type vertical heat-treating devices are widely used. In the conventional processing furnace of this type of heat treatment device, a wafer boat loaded with a plurality of wafers is inserted from below into a substantially cylindrical vertical reaction tube whose upper end is closed and the lower end is open, and it is installed as A heater that surrounds the outer side of the reaction tube to heat the wafers on the wafer boat. On the wafer boat, a plurality of wafers are held in multiple layers in a horizontal posture with the centers of the wafers aligned with each other.

又,於上述之熱處理裝置中,在反應管之內部配置收納於保護管所構成的熱電偶而對反應管內部的溫度進行量測,並根據該量測溫度來對加熱器進行反饋控制。被配置於反應管之內部的熱電偶,從被設置於封閉反應管之開口之密封蓋體之埠口的下方插入,而突出於反應管地被固定。 [先前技術文獻] [專利文獻]Furthermore, in the above-mentioned heat treatment device, a thermocouple formed in the protective tube is arranged inside the reaction tube to measure the temperature inside the reaction tube, and feedback control of the heater is performed based on the measured temperature. The thermocouple arranged inside the reaction tube is inserted from below the port of the sealing cover provided to close the opening of the reaction tube, and is fixed so as to protrude from the reaction tube. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本專利特開2014-67766號公報[Patent Document 1] Japanese Patent Laid-Open No. 2014-67766

(發明所欲解決之問題)(The problem to be solved by the invention)

當從被設置於密封蓋體的埠口插入熱電偶時,存在有熱電偶之保護管的前端或側面會與埠口的金屬面摩擦,使金屬附著於保護管,並因為所附著的金屬而發生金屬污染的可能性。When the thermocouple is inserted from the port provided in the sealing cover, the front or side surface of the protective tube with the thermocouple will rub against the metal surface of the port, causing the metal to adhere to the protective tube, and it will be affected by the attached metal. The possibility of metal contamination.

本發明之課題,在於提供降低保護管之金屬污染的技術。 (解決問題之技術手段)The subject of the present invention is to provide a technology to reduce the metal contamination of the protective tube. (Technical means to solve the problem)

根據本發明可提供一種技術,其具備有:處理容器,其對基板進行處理;金屬製之埠口,其在上述處理容器內形成供具有保護管之溫度測定器向上插通的開口;非金屬製之治具,其覆蓋上述埠口之上述開口的內周面,且被形成為可從上述處理容器之內側裝接上述埠口的筒形狀;而被插入於上述埠口的上述治具被構成為在上述溫度測定器被裝接於上述埠口時,可與上述溫度測定器一起上下移動。 (對照先前技術之功效)According to the present invention, it is possible to provide a technology, which is provided with: a processing container for processing a substrate; a metal port in which an opening is formed in the processing container through which a temperature measuring device with a protective tube is inserted upward; and a non-metal The jig that covers the inner peripheral surface of the opening of the port and is formed into a cylindrical shape that can be attached to the port from the inside of the processing container; and the jig inserted into the port is When the temperature measuring device is attached to the port, it can be moved up and down together with the temperature measuring device. (Compared with the effect of previous technology)

根據本發明,可降低保護管之金屬污染。According to the present invention, the metal pollution of the protective tube can be reduced.

作為本發明之實施形態,使用圖1對實施利用作為半導體裝置之製程之1個步驟之熱處理所進行之基板處理步驟之基板處理裝置的構成例來進行說明。As an embodiment of the present invention, a configuration example of a substrate processing apparatus that implements a substrate processing step by heat treatment as one step of a semiconductor device manufacturing process will be described with reference to FIG. 1.

基板處理裝置1將矽晶圓等之基板100收容於在處理爐10之內側所具備之作為處理容器的反應管11,而在既定之環境氣體下將該基板100加熱至既定溫度來形成薄膜。處理爐10具備有反應管11、及被設置於反應管11之外周且沿著爐軸方向被分割為複數個之作為加熱部的加熱器單元12。反應管11係一端呈開口的中空狀,且作為第二開口之爐口18由作為蓋子的密封蓋體(基座)13所封閉。在反應管11內處理對象之基板100由晶舟14所支撐而被收容,在減壓下利用加熱器單元12進行加熱而在基板100形成薄膜。加熱器單元12被連接於控制器17,藉由控制器17所控制而對反應管11內進行加熱。The substrate processing apparatus 1 houses a substrate 100 such as a silicon wafer in a reaction tube 11 as a processing container provided inside the processing furnace 10, and heats the substrate 100 to a predetermined temperature under a predetermined atmosphere to form a thin film. The processing furnace 10 includes a reaction tube 11 and a heater unit 12 that is provided on the outer circumference of the reaction tube 11 and is divided into a plurality of pieces along the furnace axis direction as a heater unit 12. The reaction tube 11 is an open hollow at one end, and the furnace port 18 as the second opening is closed by a sealing cover (base) 13 as a cover. The substrate 100 to be processed in the reaction tube 11 is supported by the wafer boat 14 and contained, and is heated by the heater unit 12 under reduced pressure to form a thin film on the substrate 100. The heater unit 12 is connected to the controller 17 and is controlled by the controller 17 to heat the inside of the reaction tube 11.

在被分割為複數個加熱區的加熱器單元12及密封蓋體13,分別設置有作為溫度測定器的加熱器熱電偶15及作為溫度測定器用的分佈式熱電偶20,且加熱器熱電偶15與分佈式熱電偶20被連接於控制器17。再者,雖在圖1中未被圖示,但上表面的三個加熱器熱電偶15被連接於控制器17。The heater unit 12 and the sealing cover 13 divided into a plurality of heating zones are respectively provided with a heater thermocouple 15 as a temperature detector and a distributed thermocouple 20 as a temperature detector, and the heater thermocouple 15 The distributed thermocouple 20 is connected to the controller 17. In addition, although not shown in FIG. 1, the three heater thermocouples 15 on the upper surface are connected to the controller 17.

根據由加熱器熱電偶15所測定的加熱器單元12附近之測定溫度與設定溫度,藉由由控制器17所控制的閘流體(thyristor)16來控制加熱器單元12朝向各加熱區的電力供給,而使反應管11之內部的溫度分布成為固定。再者,雖在圖1中未被圖示,但上表面的三個加熱器單元12與最下表面的加熱器單元12同樣地,被連接於由控制器17所控制的閘流體。According to the measured temperature and the set temperature near the heater unit 12 measured by the heater thermocouple 15, the power supply of the heater unit 12 to each heating zone is controlled by the thyristor 16 controlled by the controller 17 , And the temperature distribution inside the reaction tube 11 becomes constant. In addition, although not shown in FIG. 1, the three heater units 12 on the upper surface are connected to the thyristor controlled by the controller 17 in the same way as the heater unit 12 on the lowermost surface.

分佈式熱電偶20貫穿被設置於密封蓋體13的開口且突出至反應管11內而被設置,從而對反應管11的內部溫度進行測定。分佈式熱電偶20例如係在保護管21內分別將由複數個絶緣管所保護之四對熱電偶線22a、22b加以配線所構成。保護管21例如係由石英、SiC(碳化矽)、氧化鋁或陶瓷等之高耐熱性材料所構成。The distributed thermocouple 20 is installed through the opening of the sealing cover 13 and protrudes into the reaction tube 11 to measure the internal temperature of the reaction tube 11. The distributed thermocouple 20 is formed by wiring four pairs of thermocouple wires 22a, 22b protected by a plurality of insulating tubes in a protective tube 21, for example. The protection tube 21 is made of, for example, a highly heat-resistant material such as quartz, SiC (silicon carbide), alumina, or ceramics.

保護管21係由大徑部21a、小徑部21b及錐部21c所形成,該大徑部21a係前端封閉、基端開口、而且外徑在基端側擴徑該小徑部21b被設置於前端與大徑部21a之間而該錐部21c係直徑從小徑部21b朝大徑部21a逐漸地擴大。基端開口由鐵氟龍蓋28所封閉。再者,在如將反應管11內之溫度設為1000℃以上之非常高溫條件下使用之情形時,較佳係由耐熱性高的SiC、氧化鋁來形成保護管21。從保護管21所拉出的熱電偶線22a、22b係由可撓性之絶緣被覆28所保護,並藉由端子台(連接器)27所中繼而與補償導線29連接。補償導線29係藉由端子連接器26而與控制器17連接。The protection tube 21 is formed by a large diameter portion 21a, a small diameter portion 21b, and a tapered portion 21c. The large diameter portion 21a has a closed tip and an open base end, and the outer diameter is enlarged on the base end side. The small diameter portion 21b is provided Between the front end and the large-diameter portion 21a, the tapered portion 21c gradually increases in diameter from the small-diameter portion 21b to the large-diameter portion 21a. The base end opening is closed by a Teflon cover 28. Furthermore, when the temperature in the reaction tube 11 is used under very high temperature conditions of 1000° C. or higher, it is preferable to form the protection tube 21 from SiC or alumina with high heat resistance. The thermocouple wires 22a and 22b drawn from the protective tube 21 are protected by a flexible insulating coating 28, and are relayed by a terminal block (connector) 27 to be connected to the compensation wire 29. The compensation wire 29 is connected to the controller 17 through the terminal connector 26.

如此所構成的分佈式熱電偶20,其保護管21從被設置於密封蓋體13之金屬製的埠口19,朝爐軸方向被插入反應管11內,以沿著反應管11內之晶舟14之方式被裝設,且保護管21的下部由埠口19所固定。被穿過該保護管21之內部的複數組熱電偶線22a、22b,係對複數個區域之各者,分別測定藉由被設置於在反應管11之外部之加熱器單元12所加熱之反應管11之晶舟14附近的溫度。In the distributed thermocouple 20 constructed in this way, the protection tube 21 is inserted into the reaction tube 11 from the metal port 19 provided in the sealing cover 13 toward the furnace axis, so as to follow the crystal in the reaction tube 11 The boat 14 is installed, and the lower part of the protective tube 21 is fixed by the port 19. The plurality of thermocouple wires 22a, 22b passed through the inside of the protective tube 21 are for each of the plurality of regions, and the reaction heated by the heater unit 12 provided outside the reaction tube 11 is measured respectively The temperature near the wafer boat 14 of the tube 11.

支撐有基板100之石英製的晶舟14,被搬入如此之反應管11內。被設置於晶舟14之下部而支撐晶舟14的密封蓋體13,將反應管11的爐口18加以封閉,而將反應管11內設為氣密。藉由被設置於反應管11之外側之加熱器單元12,對每個區域分別加熱插入於反應管11內的基板100,並且從氣體供給口(未圖示)供給製程氣體且使其流通,並從排氣口(未圖示)進行排氣,藉此在基板100形成膜。The wafer boat 14 made of quartz supporting the substrate 100 is carried into such a reaction tube 11. The sealing cover 13 provided at the lower part of the wafer boat 14 to support the wafer boat 14 closes the furnace port 18 of the reaction tube 11 and makes the inside of the reaction tube 11 airtight. The heater unit 12 provided on the outer side of the reaction tube 11 heats the substrate 100 inserted in the reaction tube 11 for each area, and supplies and circulates the process gas from a gas supply port (not shown). Then, exhaust is performed from an exhaust port (not shown), thereby forming a film on the substrate 100.

然而,分佈式熱電偶20係用以校正被區域分割之反應管11內之各區域溫度者,為了在薄膜之形成等之製造運轉時將反應管11內之晶舟14附近之溫度設為目標的溫度,而調整要與被埋入加熱器單元12之各加熱器熱電偶15的測定溫度進行比較的設定溫度。However, the distributed thermocouple 20 is used to calibrate the temperature of each zone in the reaction tube 11 divided by zones, in order to set the temperature near the wafer boat 14 in the reaction tube 11 as a target during the manufacturing operation such as film formation. The set temperature to be compared with the measured temperature of each heater thermocouple 15 embedded in the heater unit 12 is adjusted.

作為一例,在薄膜之形成之製造運轉前,控制器17可藉由加熱器單元12來加熱反應管11,並藉由加熱器熱電偶15來測定反應管11外側的溫度,並且藉由分佈式熱電偶20來測定反應管11內之上下方向的溫度分布,而根據加熱器熱電偶15及分佈式熱電偶20的測定資料來預先製作校正資料。控制器17為了均勻地加熱反應管11內,而將對應於分佈式熱電偶20之測定溫度的目標值(管內設定溫度)設為全部相同,來對每個區域分別控制加熱器單元12。然後,當控制收斂而成為穩定狀態時,取得加熱器熱電偶15的溫度,作為與加熱器熱電偶15對應的目標值(加熱器設定溫度)而加以儲存。若對複數個設定溫度進行上述動作,便可得到將管內設定溫度轉換為加熱器設定溫度的表格。若使用該表格,藉由使加熱器熱電偶15之溫度接近加熱器設定溫度的控制,可無需分佈式熱電偶20即可均勻地加熱反應管11內。As an example, before the production operation of the film formation, the controller 17 can use the heater unit 12 to heat the reaction tube 11, and use the heater thermocouple 15 to measure the temperature outside the reaction tube 11, and by distributed The thermocouple 20 measures the temperature distribution in the upper and lower directions in the reaction tube 11, and the calibration data is prepared in advance based on the measurement data of the heater thermocouple 15 and the distributed thermocouple 20. In order to uniformly heat the inside of the reaction tube 11, the controller 17 sets the target value (in-tube set temperature) corresponding to the measured temperature of the distributed thermocouple 20 to be all the same, and controls the heater unit 12 for each zone. Then, when the control converges and becomes a stable state, the temperature of the heater thermocouple 15 is acquired and stored as a target value (heater set temperature) corresponding to the heater thermocouple 15. If the above actions are performed on a plurality of set temperatures, a table that converts the set temperature in the tube to the set temperature of the heater can be obtained. If this table is used, by controlling the temperature of the heater thermocouple 15 close to the heater setting temperature, the inside of the reaction tube 11 can be uniformly heated without the need for the distributed thermocouple 20.

控制器17為了進行更高度的多變量模型預測控制,可使用分佈式熱電偶20來取得步階響應(step response)等之處理爐10的熱特性。以下將包含轉換表格之取得之如此的測定稱為校正,並將可藉由校正所得到的資料稱為校正資料。於該情形時,當基板處理裝置1之運用時,取下分佈式熱電偶20並將埠口19部分的開口加以閉塞,而僅利用加熱器熱電偶15來測定溫度。然後,根據校正資料將該加熱器熱電偶15的測定溫度修正為反應管11內部的溫度資料,再利用該修正後的資料來控制加熱器單元12。校正雖然在裝置的裝設或維護時以全面性地進行之情形為多,但亦可在運用中進行局部的校正。In order to perform more advanced multivariable model predictive control, the controller 17 can use the distributed thermocouple 20 to obtain the thermal characteristics of the processing furnace 10 such as step response. Hereinafter, such a measurement including the acquisition of the conversion table is called calibration, and the data that can be obtained by calibration is called calibration data. In this case, when the substrate processing apparatus 1 is used, the distributed thermocouple 20 is removed and the opening of the port 19 is blocked, and only the heater thermocouple 15 is used to measure the temperature. Then, the measured temperature of the heater thermocouple 15 is corrected to the temperature data inside the reaction tube 11 based on the correction data, and the corrected data is used to control the heater unit 12. Although calibration is often performed comprehensively during installation or maintenance of the device, partial calibration can also be performed during operation.

以下對分佈式熱電偶20的安裝,使用圖3至圖6來進行說明。如圖3(b)所示,密封蓋體具有石英製之圓盤狀的蓋體(基座)13a、以及接觸而保持於蓋體13a之底面之金屬製的蓋體承座13b。於蓋體13a設有作為開口之圓形的孔13c,並且於蓋體承座13b設有金屬製的埠口19。埠口19係由朝上下方向延伸且一端被連接於蓋體承座13b之下表面的管部19a、以及被設置於管部19a之一端側之作為緊固部的接頭19b所構成。管部19a之內側的空間連通於蓋體承座13b的上表面側。孔13c在蓋體13a構成被形成為與管部19a同心,且供分佈式熱電偶20朝上插通至反應管11內的開口19c。管部19a係在插通方向上具有固定之直徑的圓管。管部19a的內徑較孔13c的直徑小。在接頭19b的外周部,為了將分佈式熱電偶20加以緊固,可設置供蓋形螺帽(接合螺帽)緊固的公螺絲或凸緣等。在接頭19b的內周,對應於為了將與分佈式熱電偶20之間氣密地加以密封的後述之O形環32,可設置錐面或階差。Hereinafter, the installation of the distributed thermocouple 20 will be described using FIGS. 3 to 6. As shown in FIG. 3(b), the sealing lid has a quartz disc-shaped lid (base) 13a, and a metal lid holder 13b that is in contact with and held on the bottom surface of the lid 13a. A circular hole 13c as an opening is provided in the cover 13a, and a metal port 19 is provided in the cover socket 13b. The port 19 is composed of a pipe portion 19a extending in the vertical direction and one end connected to the lower surface of the cover holder 13b, and a joint 19b as a fastening portion provided on one end side of the pipe portion 19a. The space inside the pipe portion 19a communicates with the upper surface side of the lid holder 13b. The hole 13c is formed in the cover body 13a so as to be concentric with the tube portion 19a, and the distributed thermocouple 20 is inserted upward to the opening 19c in the reaction tube 11. The pipe portion 19a is a round pipe having a fixed diameter in the insertion direction. The inner diameter of the pipe portion 19a is smaller than the diameter of the hole 13c. In order to fasten the distributed thermocouple 20 on the outer periphery of the joint 19b, a male screw or flange for fastening a cap nut (joint nut) can be provided. On the inner circumference of the joint 19b, a tapered surface or a step difference can be provided corresponding to an O-ring 32 described later in order to airtightly seal the distributed thermocouple 20.

如圖3(a)所示,治具31藉由石英等之非金屬被形成為筒形狀,且如圖3(b)所示般,覆蓋埠口19之開口19c的內表面,可從密封蓋體13之上方的反應管11側裝接於埠口19。治具31具有被間隙嵌入於管部19a之內側的筒狀部31a、及相較於管部19a之內側之形狀更大地被形成於筒狀部31a之一端的卡止部31b。例如,筒狀部31a係在插通方向上具有固定之直徑的圓管,且筒狀部31a的外徑被構成為較管部19a的內徑小。卡止部31b係在插通方向上具有固定之直徑的圓管,且卡止部31b的外徑被構成為較管部19a的內徑大。As shown in Fig. 3(a), the jig 31 is formed into a cylindrical shape by non-metal such as quartz, and as shown in Fig. 3(b), the inner surface of the opening 19c of the port 19 can be covered from The side of the reaction tube 11 above the cover 13 is attached to the port 19. The jig 31 has a cylindrical portion 31a fitted into the inner side of the pipe portion 19a by a gap, and a locking portion 31b formed at one end of the cylindrical portion 31a larger than the shape of the inner side of the pipe portion 19a. For example, the cylindrical portion 31a is a round pipe having a fixed diameter in the insertion direction, and the outer diameter of the cylindrical portion 31a is configured to be smaller than the inner diameter of the pipe portion 19a. The locking portion 31b is a circular tube having a fixed diameter in the insertion direction, and the outer diameter of the locking portion 31b is configured to be larger than the inner diameter of the pipe portion 19a.

卡止部31b的下表面被構成為與蓋體承座13b或埠口19的上表面抵接。藉此,治具31不會朝下脫落。治具31其筒狀部31a的長度與埠口19的管部19a為相同程度。治具31的筒狀部31a及卡止部31b的內徑被構成為較分佈式熱電偶20的保護管21大,且較保護管21之大徑部21a的外徑小。卡止部31b之插通方向的長度被構成較蓋體13a之插通方向的長度長。再者,當卡止部31b存在有與反應管11接觸之可能的情形時,亦可切缺卡止部31b之一部分。The lower surface of the locking portion 31b is configured to abut against the upper surface of the cover socket 13b or the port 19. Thereby, the jig 31 will not fall off downward. The length of the cylindrical portion 31a of the jig 31 is the same as that of the tube portion 19a of the port 19. The inner diameters of the cylindrical portion 31a and the locking portion 31b of the jig 31 are configured to be larger than the protective tube 21 of the distributed thermocouple 20 and smaller than the outer diameter of the large-diameter portion 21a of the protective tube 21. The length of the insertion direction of the locking portion 31b is configured to be longer than the length of the insertion direction of the cover 13a. Furthermore, when the locking portion 31b may be in contact with the reaction tube 11, a part of the locking portion 31b can also be cut out.

首先,如圖4所示,治具31從蓋體13a之孔13c的上方被插入埠口19。藉此,開口19c(管部19a)之內表面由治具31所覆蓋。在治具31的筒狀部31a被插入埠口19,並藉由卡止部31b被卡止於埠口19時,筒狀部31a之被插入埠口19側之前端(下端)的上下方向上的位置,係與埠口19的管部19a下端相同或位於較下端更下方。First, as shown in FIG. 4, the jig 31 is inserted into the port 19 from above the hole 13c of the cover 13a. Thereby, the inner surface of the opening 19c (pipe portion 19a) is covered by the jig 31. When the cylindrical portion 31a of the jig 31 is inserted into the port 19 and is locked to the port 19 by the locking portion 31b, the front end (lower end) of the cylindrical portion 31a is inserted into the port 19 in the vertical direction The upper position is the same as the lower end of the tube 19a of the port 19 or is located below the lower end.

其次,如圖5所示,保護管21從埠口19之下方被插入治具31的筒狀部31a內,並以突出於反應管11內之方式朝上方推入。此時,由於埠口19的管部19a與密封蓋體13之孔13c的內表面由治具31所覆蓋,因此保護管21不會與埠口19及密封蓋體13發生摩擦。Next, as shown in FIG. 5, the protective tube 21 is inserted into the cylindrical portion 31a of the jig 31 from below the port 19, and pushed upward so as to protrude into the reaction tube 11. At this time, since the inner surfaces of the tube portion 19a of the port 19 and the hole 13c of the sealing cover 13 are covered by the jig 31, the protection tube 21 will not rub against the port 19 and the sealing cover 13.

然後,如圖6所示,被插入於埠口19的治具31,在分佈式熱電偶20要被裝接於埠口19時,藉由抵接於保護管21之粗度連續地擴大的錐部21c,而與分佈式熱電偶20一起被提起,治具31的卡止部31b脫離孔13c並且筒狀部31a之一部分脫離埠口19之管部19a的內表面。被插入至固定位置的分佈式熱電偶20,藉由接頭19b被緊固於埠口19。此時,分佈式熱電偶20藉由蓋形螺帽等而被維持於固定位置,而大徑部21a與接頭19b之內周成為間隙嵌入,藉由被設置於蓋形錐部21c的O形環32抵接於在接頭19b所設置的錐面,可保持分佈式熱電偶20與接頭19b之間的氣密性。再者,以接近大氣壓的條件被進行校正之情形時,則不需要O形環32與在接頭19b所設置的錐面。又,治具31的上推除了治具31直接抵接於錐部21c的方法之外,亦包含有使O形環32而抵接的方法。如此,在分佈式熱電偶20要被裝接於埠口19時,治具31一方面筒狀部31a之一部分脫離作為開口之埠口19之管部19a的內表面,另一方面另一部分則滯留於管部19a的內表面。Then, as shown in FIG. 6, the jig 31 inserted into the port 19 is continuously enlarged by the thickness of the protective tube 21 when the distributed thermocouple 20 is to be attached to the port 19 The tapered portion 21c is lifted together with the distributed thermocouple 20, the locking portion 31b of the jig 31 is separated from the hole 13c, and a part of the cylindrical portion 31a is separated from the inner surface of the tube portion 19a of the port 19. The distributed thermocouple 20 inserted into a fixed position is fastened to the port 19 by a connector 19b. At this time, the distributed thermocouple 20 is maintained at a fixed position by a cap nut, etc., and the inner periphery of the large diameter portion 21a and the joint 19b is inserted into a gap, by the O-shaped provided on the cap taper portion 21c The ring 32 abuts on the tapered surface provided on the joint 19b, and can maintain the airtightness between the distributed thermocouple 20 and the joint 19b. Furthermore, when the correction is performed under conditions close to atmospheric pressure, the O-ring 32 and the tapered surface provided on the joint 19b are not required. In addition, the push-up of the jig 31 includes a method of making the O-ring 32 abut in addition to the method in which the jig 31 directly abuts the taper portion 21c. In this way, when the distributed thermocouple 20 is to be attached to the port 19, one part of the cylindrical portion 31a of the jig 31 is separated from the inner surface of the tube portion 19a of the port 19 as the opening on the one hand, and the other part is It stays on the inner surface of the pipe part 19a.

當運用裝置時,可取代圖3至圖6所示之蓋體13a,而使用不具有孔13c的蓋體,藉此可使金屬完全不會從爐口露出。或者,亦可裝接封閉孔13c之非金屬製的栓。再者,密封蓋體13並不僅限於分離成維持氣密的蓋體與確保機械強度的蓋體承座者,亦可以金屬一體地形成。於該情形時,藉熔接而被連接於密封蓋體13的埠口19,可藉由被裝接於接頭19b之氣密性的蓋而完全地加以封閉。When using the device, the cover 13a shown in FIGS. 3 to 6 can be replaced, and a cover without holes 13c can be used, so that the metal will not be exposed from the furnace mouth at all. Alternatively, a non-metallic plug that closes the hole 13c may be attached. Furthermore, the sealing cover 13 is not limited to being separated into a cover for maintaining airtightness and a cover holder for ensuring mechanical strength, and it may be formed integrally with metal. In this case, the port 19 connected to the sealing cover 13 by welding can be completely closed by the airtight cover attached to the joint 19b.

再者,本發明並非被限定於上述之各實施形態者,當然可在不脫離其主旨的範圍內進行各種變更。例如,大徑部21a與錐部21c並非被限定於與小徑部21b(分佈式熱電偶20)一體地形成者,亦包含以套圈(ferrule)等之態樣而個別地被準備者。在要裝接於埠口19時可與大徑部21a同樣地發揮功能,且與分佈式熱電偶20被固定為一體的套圈,可視為其構成大徑部21a。又,分佈式熱電偶20並非被限定於在運用時被卸除者,亦可在運用中仍與治具31一起被留在反應管11內,使藉此所測定到之內部溫度被利用於高精度的溫度控制。In addition, the present invention is not limited to the above-mentioned embodiments, and of course various changes can be made without departing from the scope of the gist. For example, the large-diameter portion 21a and the tapered portion 21c are not limited to those formed integrally with the small-diameter portion 21b (distributed thermocouple 20), but also include those separately prepared as ferrules or the like. When it is to be attached to the port 19, it can function as the large-diameter portion 21a, and the ferrule that is fixed as an integral part with the distributed thermocouple 20 can be regarded as constituting the large-diameter portion 21a. In addition, the distributed thermocouple 20 is not limited to those that are removed during operation. It can also be left in the reaction tube 11 together with the jig 31 during operation, so that the internal temperature measured thereby can be used for High-precision temperature control.

又,於上述之實施形態中,雖已對處理被實施於晶圓的情形進行說明,但處理對象既可為晶圓以外的基板,亦可為光罩(photomask)與印刷電路板、液晶面板、光碟或磁碟等。 又,本發明不僅可應用於半導體製造裝置,亦可應用於如LCD製造裝置般之對玻璃基板進行處理的裝置、以及其他基板處理裝置。基板處理的處理內容不僅為CVD(化學氣相沉積法)、PVD(物理氣相沉積法)、形成氧化膜、氮化膜、含金屬膜等之成膜處理,亦可為曝光處理、微影、塗佈處理等。In addition, in the above-mentioned embodiment, although the case where the processing is performed on the wafer has been described, the processing object may be a substrate other than the wafer, a photomask, a printed circuit board, or a liquid crystal panel. , CD or floppy disk, etc. In addition, the present invention can be applied not only to semiconductor manufacturing devices, but also to devices that process glass substrates such as LCD manufacturing devices, and other substrate processing devices. Substrate processing includes not only CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), oxide film, nitride film, metal-containing film, etc., but also exposure processing and photolithography. , Coating treatment, etc.

1:基板處理裝置 10:處理爐 11:反應管(處理容器) 12:加熱器單元 13:密封蓋體(基座) 13a:蓋體 13b:蓋體承座 13c:圓形孔 14:晶舟 15:加熱器熱電偶 16:閘流體 17:控制器 18:爐口 19:埠口 19a:管部 19b:接頭 20:分佈式熱電偶(溫度測定器) 21:保護管 21c:蓋形錐部 22a、22b:熱電偶線 26:端子連接器 27:端子台(連接器) 28:鐵氟龍蓋 29:補償導線 31:治具 31a:筒狀部 31b:卡止部 32:O形環 100:基板1: Substrate processing equipment 10: Treatment furnace 11: Reaction tube (processing container) 12: heater unit 13: Sealing cover (base) 13a: Lid 13b: Lid holder 13c: round hole 14: Crystal Boat 15: Heater thermocouple 16: thyristor 17: Controller 18: Furnace mouth 19: Port 19a: Pipe Department 19b: Connector 20: Distributed thermocouple (temperature detector) 21: Protection tube 21c: Cap cone 22a, 22b: thermocouple wire 26: Terminal connector 27: Terminal block (connector) 28: Teflon cover 29: Compensation wire 31: Fixture 31a: cylindrical part 31b: Locking part 32: O-ring 100: substrate

圖1係本發明實施形態中基板處理裝置之垂直剖視圖。 圖2係表示本發明實施形態之分佈式熱電偶(profile thermocouple)的縱剖視圖。 圖3(a)係表示本發明實施形態之治具的立體圖,而圖3(b)係說明圖2所示之分佈式熱電偶之安裝部的圖。 圖4係表示將圖3(a)所示之治具裝接於圖3(b)所示之安裝部之狀態的圖。 圖5係表示將圖2所示之分佈式熱電偶開始插入圖4所示之安裝部之狀態的圖。 圖6係表示圖2所示之分佈式熱電偶裝接於圖4所示之安裝部之狀態的圖。Fig. 1 is a vertical cross-sectional view of a substrate processing apparatus in an embodiment of the present invention. Fig. 2 is a longitudinal cross-sectional view showing a profile thermocouple according to an embodiment of the present invention. FIG. 3(a) is a perspective view showing the jig of the embodiment of the present invention, and FIG. 3(b) is a diagram illustrating the installation part of the distributed thermocouple shown in FIG. 2. Fig. 4 is a diagram showing a state where the jig shown in Fig. 3(a) is attached to the mounting part shown in Fig. 3(b). Fig. 5 is a diagram showing a state where the distributed thermocouple shown in Fig. 2 is started to be inserted into the mounting part shown in Fig. 4. Fig. 6 is a diagram showing a state in which the distributed thermocouple shown in Fig. 2 is attached to the mounting part shown in Fig. 4.

11:反應管(處理容器) 11: Reaction tube (processing container)

13a:蓋體 13a: Lid

13b:蓋體承座 13b: Lid holder

19:埠口 19: Port

19a:管部 19a: Pipe Department

19b:接頭 19b: Connector

20:分佈式熱電偶(溫度測定器) 20: Distributed thermocouple (temperature detector)

21:保護管 21: Protection tube

31:治具 31: Fixture

31a:筒狀部 31a: cylindrical part

31b:卡止部 31b: Locking part

32:O形環 32: O-ring

Claims (13)

一種基板處理裝置,其具備有: 處理容器,其對基板進行處理; 埠口,其在上述處理容器內,形成供具有保護管之溫度測定器向上插通的開口;以及 非金屬製之治具,其覆蓋上述埠口之上述開口的內周面,且被形成為可從上述處理容器之內側裝接於上述埠口的筒形狀; 被插入於上述埠口的上述治具被構成為在上述溫度測定器被裝接於上述埠口時,可與上述溫度測定器一起上下移動。A substrate processing device is provided with: Processing container, which processes the substrate; A port, which is formed in the above-mentioned processing container with an opening through which a temperature measuring device with a protective tube can be inserted upward; and A non-metallic jig that covers the inner peripheral surface of the opening of the port and is formed into a cylindrical shape that can be attached to the port from the inside of the processing container; The jig inserted into the port is configured to be movable up and down together with the temperature measurement device when the temperature measurement device is attached to the port. 如請求項1之基板處理裝置,其中,被插入於上述埠口的上述治具,在由被裝接於上述埠口的上述溫度測定器所提起時,一方面上述治具之一部分脫離上述開口的內表面,另一面另一部分則留在上述開口的內表面。The substrate processing apparatus of claim 1, wherein when the jig inserted into the port is lifted by the temperature measuring device attached to the port, on the one hand, a part of the jig is separated from the opening On the other side, another part is left on the inner surface of the above-mentioned opening. 如請求項1或2之基板處理裝置,其中,被插入於上述埠口的上述治具藉由抵接於被裝接於上述埠口之上述保護管之粗度擴大的部分,而與上述溫度測定器一起被提起。The substrate processing apparatus of claim 1 or 2, wherein the jig inserted into the port is abutted against the enlarged part of the protective tube attached to the port, and the temperature is The measuring device is lifted together. 如請求項3之基板處理裝置,其中,其進一步具備有,將為了搬出入上述基板而更在上述處理容器之下方所設置之爐口加以封閉的蓋;且上述埠口被設置於上述蓋。The substrate processing apparatus according to claim 3, which is further provided with a cover for closing a furnace port provided below the processing container for carrying in and out of the substrate; and the port is provided in the cover. 如請求項4之基板處理裝置,其中,上述埠口具有: 管部,其沿著上下方向延伸,一端被連接於上述蓋,且在其內側構成上述開口;以及 緊固部,其被連接於上述管部之另一端,且在上述粗度擴大的部分或上述溫度測定器的大徑部固定被裝接的上述溫度測定器。Such as the substrate processing apparatus of claim 4, wherein the above-mentioned port has: A tube portion, which extends in the up-down direction, one end is connected to the above-mentioned cover, and the above-mentioned opening is formed on the inner side thereof; and A fastening portion is connected to the other end of the pipe portion, and the attached temperature measuring device is fixed to the enlarged portion or the large diameter portion of the temperature measuring device. 如請求項5之基板處理裝置,其中,上述管部係在插通方向上具有固定之直徑的圓管, 上述治具具有朝上述管部之內側被嵌入間隙的筒狀部、以及在上述筒狀部之一端被形成為較上述開口之內側之形狀大的卡止部,且在被插入上述埠口而由上述卡止部被卡止於上述開口時,被插入上述埠口側的前端對應於上述埠口之上述管部與上述緊固部之連接位置、或位於較上述接續位置更上述緊固部側。The substrate processing apparatus of claim 5, wherein the tube portion is a circular tube having a fixed diameter in the insertion direction, The jig has a cylindrical portion that is fitted into the gap toward the inner side of the pipe portion, and a locking portion formed at one end of the cylindrical portion to be larger than the inner side of the opening, and is inserted into the port. When the locking portion is locked to the opening, the front end inserted into the port side corresponds to the connection position of the pipe portion and the fastening portion of the port, or is located further than the connection position of the fastening portion side. 如請求項4之基板處理裝置,其中,上述埠口及上述蓋之至少一者係金屬製。The substrate processing apparatus of claim 4, wherein at least one of the port and the cover is made of metal. 如請求項6之基板處理裝置,其中,上述蓋具有石英製之圓盤狀的蓋體、以及接觸於上述蓋體13a之底面而進行保持之金屬製的蓋體承座,上述埠口被設置於上述蓋體承座,且上述蓋體在對應於上述埠口的位置具有較上述卡止部大的孔。The substrate processing apparatus of claim 6, wherein the cover has a disc-shaped cover made of quartz, and a cover holder made of metal contacting and holding the bottom surface of the cover 13a, and the port is provided On the cover body holder, and the cover body has a hole larger than the locking portion at a position corresponding to the port. 如請求項3之基板處理裝置,其中,上述保護管之粗度擴大的部分具有錐形狀。The substrate processing apparatus according to claim 3, wherein the enlarged portion of the protective tube has a tapered shape. 如請求項3之基板處理裝置,其中,上述緊固部在與保護管之粗度擴大的部分之間,係藉由O形環維持氣密性。The substrate processing apparatus of claim 3, wherein the airtightness is maintained by the O-ring between the fastening portion and the enlarged portion of the protection tube. 一種治具,係被插入在處理基板的處理容器內,形成供具有保護管之溫度測定器向上插通之開口之埠口之非金屬製的治具;其 具備有: 筒狀部,其覆蓋上述埠口之上述開口的內表面,且被形成為可從上述處理容器之內側裝接於上述埠口的筒形狀,間隙嵌入於上述埠口的內側;以及 卡止部,其在上述筒狀部的一端被形成為較上述開口之內側的形狀為大; 在上述溫度測定器被裝接於上述埠口時,藉由抵接於上述保護管之粗度擴大的部分而與上述溫度測定器一起被提起,上述筒狀部之一部分則脫離上述開口的內表面。A fixture that is inserted into a processing container for processing substrates to form a non-metallic fixture for an opening through which a temperature measuring device with a protective tube is inserted upward; Have: A cylindrical portion that covers the inner surface of the opening of the port and is formed into a cylindrical shape that can be attached to the port from the inside of the processing container, and the gap is embedded in the inside of the port; and The locking portion is formed at one end of the cylindrical portion to be larger than the shape of the inner side of the opening; When the temperature measuring device is attached to the port, it is lifted together with the temperature measuring device by abutting on the enlarged part of the protective tube, and a part of the cylindrical portion is separated from the inside of the opening. surface. 一種基板處理裝置之校正方法,其具備有: 準備在埠口裝接非金屬製之治具之基板處理裝置的步驟,其中,該埠口在處理基板之處理容器的內部形成供具有保護管之分佈式(profile)溫度測定器向上插通的開口,而該治具覆蓋上述埠口之上述開口的內周面且被形成為可從上述處理容器之內側裝接於上述埠口的筒形狀; 在上述埠口裝接上述分佈式溫度測定器,並設為上述治具與上述溫度測定器一起被上推之狀態的步驟;以及 控制器藉由加熱器對處理容器進行加熱,藉由加熱器溫度測定器對處理容器外側的溫度進行測定,並且藉由分佈式熱電偶20對處理容器內之上下方向的溫度分布進行測定,並從上述加熱器溫度測定器及上述分佈式溫度測定器的測定資料來製作校正資料的步驟。A method for calibrating a substrate processing device, which includes: The step of preparing a substrate processing device for attaching a non-metallic fixture to a port, wherein the port is formed inside a processing container for processing substrates for upwardly inserting a profile temperature measuring device with a protective tube An opening, and the jig covers the inner peripheral surface of the opening of the port and is formed into a cylindrical shape that can be attached to the port from the inside of the processing container; The step of attaching the distributed temperature measuring device to the port and setting the jig and the temperature measuring device to be pushed up together; and The controller heats the processing container with a heater, measures the temperature outside the processing container with a heater temperature measuring device, and measures the temperature distribution in the upper and lower directions of the processing container with a distributed thermocouple 20, and A step of preparing calibration data from the measurement data of the heater temperature measuring device and the distributed temperature measuring device. 一種半導體裝置之製造方法,其具備有: 將基板搬入基板處理裝置之處理容器的步驟,而該基板處理裝置具有對基板進行處理的處理容器、以及在上述處理容器內形成供具有保護管之溫度測定器向上插通之開口的埠口; 根據溫度對處理容器之加熱器進行控制的步驟,而該溫度係在從上述處理容器之內側被裝接於上述埠口時,經由被形成為覆蓋上述埠口之上述開口之內表面之筒形狀之非金屬製的治具而由被裝接於上述埠口之上述溫度測定器所測定者;以及 對藉由上述加熱器所加熱之基板進行處理的步驟; 被裝接於上述埠口的上述溫度測定器,上述治具之一部分,藉由上述溫度測定器之保護管之粗度擴大的部分抵接於上述治具來提起上述治具,而脫離上述開口的內表面。A method of manufacturing a semiconductor device, which includes: The step of carrying a substrate into a processing container of a substrate processing apparatus, and the substrate processing apparatus has a processing container for processing the substrate, and a port through which a temperature measuring device with a protective tube is inserted upwardly in the processing container; The step of controlling the heater of the processing container according to the temperature, and the temperature is formed to cover the inner surface of the opening of the port when the temperature is attached to the port from the inside of the processing container The non-metallic fixture is measured by the above-mentioned temperature measuring device attached to the above-mentioned port; and The step of processing the substrate heated by the above heater; The temperature measuring device is attached to the port, and a part of the jig is lifted out of the opening when the enlarged part of the protective tube of the temperature measuring device abuts on the jig.的内面。 The inner surface.
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