TW202142101A - Substrate processing device, jig, calibration method for substrate processing device, and method for manufacturing semiconductor device - Google Patents
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- 238000012545 processing Methods 0.000 title claims abstract description 63
- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 230000001681 protective effect Effects 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims description 15
- 238000003780 insertion Methods 0.000 claims description 6
- 230000037431 insertion Effects 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000009529 body temperature measurement Methods 0.000 claims 2
- 229910052755 nonmetal Inorganic materials 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 description 42
- 235000012431 wafers Nutrition 0.000 description 16
- 238000007789 sealing Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 238000003466 welding Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
Description
本發明係關於基板處理裝置、治具、基板處理裝置之校正方法及半導體裝置之製造方法。The present invention relates to a substrate processing device, a jig, a calibration method of the substrate processing device, and a manufacturing method of a semiconductor device.
在半導體裝置(IC等)之製造中,為了對基板進行熱處理,廣泛地使用有批次式直立型的熱處理裝置。於習知之此種熱處理裝置的處理爐中,將搭載有複數個片晶圓的晶舟從下方插入上端封閉且下端被開放之大致圓筒形之直立式反應管的內部,藉由被設置為包圍反應管之外側的加熱器,來對晶舟上的晶圓進行熱處理。在晶舟上,複數個片晶圓以水平姿勢且晶圓之中心相互地對齊之狀態多層積層而被保持。In the manufacture of semiconductor devices (IC, etc.), in order to heat-treat substrates, batch-type vertical heat-treating devices are widely used. In the conventional processing furnace of this type of heat treatment device, a wafer boat loaded with a plurality of wafers is inserted from below into a substantially cylindrical vertical reaction tube whose upper end is closed and the lower end is open, and it is installed as A heater that surrounds the outer side of the reaction tube to heat the wafers on the wafer boat. On the wafer boat, a plurality of wafers are held in multiple layers in a horizontal posture with the centers of the wafers aligned with each other.
又,於上述之熱處理裝置中,在反應管之內部配置收納於保護管所構成的熱電偶而對反應管內部的溫度進行量測,並根據該量測溫度來對加熱器進行反饋控制。被配置於反應管之內部的熱電偶,從被設置於封閉反應管之開口之密封蓋體之埠口的下方插入,而突出於反應管地被固定。 [先前技術文獻] [專利文獻]Furthermore, in the above-mentioned heat treatment device, a thermocouple formed in the protective tube is arranged inside the reaction tube to measure the temperature inside the reaction tube, and feedback control of the heater is performed based on the measured temperature. The thermocouple arranged inside the reaction tube is inserted from below the port of the sealing cover provided to close the opening of the reaction tube, and is fixed so as to protrude from the reaction tube. [Prior Technical Literature] [Patent Literature]
[專利文獻1]日本專利特開2014-67766號公報[Patent Document 1] Japanese Patent Laid-Open No. 2014-67766
(發明所欲解決之問題)(The problem to be solved by the invention)
當從被設置於密封蓋體的埠口插入熱電偶時,存在有熱電偶之保護管的前端或側面會與埠口的金屬面摩擦,使金屬附著於保護管,並因為所附著的金屬而發生金屬污染的可能性。When the thermocouple is inserted from the port provided in the sealing cover, the front or side surface of the protective tube with the thermocouple will rub against the metal surface of the port, causing the metal to adhere to the protective tube, and it will be affected by the attached metal. The possibility of metal contamination.
本發明之課題,在於提供降低保護管之金屬污染的技術。 (解決問題之技術手段)The subject of the present invention is to provide a technology to reduce the metal contamination of the protective tube. (Technical means to solve the problem)
根據本發明可提供一種技術,其具備有:處理容器,其對基板進行處理;金屬製之埠口,其在上述處理容器內形成供具有保護管之溫度測定器向上插通的開口;非金屬製之治具,其覆蓋上述埠口之上述開口的內周面,且被形成為可從上述處理容器之內側裝接上述埠口的筒形狀;而被插入於上述埠口的上述治具被構成為在上述溫度測定器被裝接於上述埠口時,可與上述溫度測定器一起上下移動。 (對照先前技術之功效)According to the present invention, it is possible to provide a technology, which is provided with: a processing container for processing a substrate; a metal port in which an opening is formed in the processing container through which a temperature measuring device with a protective tube is inserted upward; and a non-metal The jig that covers the inner peripheral surface of the opening of the port and is formed into a cylindrical shape that can be attached to the port from the inside of the processing container; and the jig inserted into the port is When the temperature measuring device is attached to the port, it can be moved up and down together with the temperature measuring device. (Compared with the effect of previous technology)
根據本發明,可降低保護管之金屬污染。According to the present invention, the metal pollution of the protective tube can be reduced.
作為本發明之實施形態,使用圖1對實施利用作為半導體裝置之製程之1個步驟之熱處理所進行之基板處理步驟之基板處理裝置的構成例來進行說明。As an embodiment of the present invention, a configuration example of a substrate processing apparatus that implements a substrate processing step by heat treatment as one step of a semiconductor device manufacturing process will be described with reference to FIG. 1.
基板處理裝置1將矽晶圓等之基板100收容於在處理爐10之內側所具備之作為處理容器的反應管11,而在既定之環境氣體下將該基板100加熱至既定溫度來形成薄膜。處理爐10具備有反應管11、及被設置於反應管11之外周且沿著爐軸方向被分割為複數個之作為加熱部的加熱器單元12。反應管11係一端呈開口的中空狀,且作為第二開口之爐口18由作為蓋子的密封蓋體(基座)13所封閉。在反應管11內處理對象之基板100由晶舟14所支撐而被收容,在減壓下利用加熱器單元12進行加熱而在基板100形成薄膜。加熱器單元12被連接於控制器17,藉由控制器17所控制而對反應管11內進行加熱。The
在被分割為複數個加熱區的加熱器單元12及密封蓋體13,分別設置有作為溫度測定器的加熱器熱電偶15及作為溫度測定器用的分佈式熱電偶20,且加熱器熱電偶15與分佈式熱電偶20被連接於控制器17。再者,雖在圖1中未被圖示,但上表面的三個加熱器熱電偶15被連接於控制器17。The
根據由加熱器熱電偶15所測定的加熱器單元12附近之測定溫度與設定溫度,藉由由控制器17所控制的閘流體(thyristor)16來控制加熱器單元12朝向各加熱區的電力供給,而使反應管11之內部的溫度分布成為固定。再者,雖在圖1中未被圖示,但上表面的三個加熱器單元12與最下表面的加熱器單元12同樣地,被連接於由控制器17所控制的閘流體。According to the measured temperature and the set temperature near the
分佈式熱電偶20貫穿被設置於密封蓋體13的開口且突出至反應管11內而被設置,從而對反應管11的內部溫度進行測定。分佈式熱電偶20例如係在保護管21內分別將由複數個絶緣管所保護之四對熱電偶線22a、22b加以配線所構成。保護管21例如係由石英、SiC(碳化矽)、氧化鋁或陶瓷等之高耐熱性材料所構成。The
保護管21係由大徑部21a、小徑部21b及錐部21c所形成,該大徑部21a係前端封閉、基端開口、而且外徑在基端側擴徑該小徑部21b被設置於前端與大徑部21a之間而該錐部21c係直徑從小徑部21b朝大徑部21a逐漸地擴大。基端開口由鐵氟龍蓋28所封閉。再者,在如將反應管11內之溫度設為1000℃以上之非常高溫條件下使用之情形時,較佳係由耐熱性高的SiC、氧化鋁來形成保護管21。從保護管21所拉出的熱電偶線22a、22b係由可撓性之絶緣被覆28所保護,並藉由端子台(連接器)27所中繼而與補償導線29連接。補償導線29係藉由端子連接器26而與控制器17連接。The
如此所構成的分佈式熱電偶20,其保護管21從被設置於密封蓋體13之金屬製的埠口19,朝爐軸方向被插入反應管11內,以沿著反應管11內之晶舟14之方式被裝設,且保護管21的下部由埠口19所固定。被穿過該保護管21之內部的複數組熱電偶線22a、22b,係對複數個區域之各者,分別測定藉由被設置於在反應管11之外部之加熱器單元12所加熱之反應管11之晶舟14附近的溫度。In the
支撐有基板100之石英製的晶舟14,被搬入如此之反應管11內。被設置於晶舟14之下部而支撐晶舟14的密封蓋體13,將反應管11的爐口18加以封閉,而將反應管11內設為氣密。藉由被設置於反應管11之外側之加熱器單元12,對每個區域分別加熱插入於反應管11內的基板100,並且從氣體供給口(未圖示)供給製程氣體且使其流通,並從排氣口(未圖示)進行排氣,藉此在基板100形成膜。The
然而,分佈式熱電偶20係用以校正被區域分割之反應管11內之各區域溫度者,為了在薄膜之形成等之製造運轉時將反應管11內之晶舟14附近之溫度設為目標的溫度,而調整要與被埋入加熱器單元12之各加熱器熱電偶15的測定溫度進行比較的設定溫度。However, the
作為一例,在薄膜之形成之製造運轉前,控制器17可藉由加熱器單元12來加熱反應管11,並藉由加熱器熱電偶15來測定反應管11外側的溫度,並且藉由分佈式熱電偶20來測定反應管11內之上下方向的溫度分布,而根據加熱器熱電偶15及分佈式熱電偶20的測定資料來預先製作校正資料。控制器17為了均勻地加熱反應管11內,而將對應於分佈式熱電偶20之測定溫度的目標值(管內設定溫度)設為全部相同,來對每個區域分別控制加熱器單元12。然後,當控制收斂而成為穩定狀態時,取得加熱器熱電偶15的溫度,作為與加熱器熱電偶15對應的目標值(加熱器設定溫度)而加以儲存。若對複數個設定溫度進行上述動作,便可得到將管內設定溫度轉換為加熱器設定溫度的表格。若使用該表格,藉由使加熱器熱電偶15之溫度接近加熱器設定溫度的控制,可無需分佈式熱電偶20即可均勻地加熱反應管11內。As an example, before the production operation of the film formation, the
控制器17為了進行更高度的多變量模型預測控制,可使用分佈式熱電偶20來取得步階響應(step response)等之處理爐10的熱特性。以下將包含轉換表格之取得之如此的測定稱為校正,並將可藉由校正所得到的資料稱為校正資料。於該情形時,當基板處理裝置1之運用時,取下分佈式熱電偶20並將埠口19部分的開口加以閉塞,而僅利用加熱器熱電偶15來測定溫度。然後,根據校正資料將該加熱器熱電偶15的測定溫度修正為反應管11內部的溫度資料,再利用該修正後的資料來控制加熱器單元12。校正雖然在裝置的裝設或維護時以全面性地進行之情形為多,但亦可在運用中進行局部的校正。In order to perform more advanced multivariable model predictive control, the
以下對分佈式熱電偶20的安裝,使用圖3至圖6來進行說明。如圖3(b)所示,密封蓋體具有石英製之圓盤狀的蓋體(基座)13a、以及接觸而保持於蓋體13a之底面之金屬製的蓋體承座13b。於蓋體13a設有作為開口之圓形的孔13c,並且於蓋體承座13b設有金屬製的埠口19。埠口19係由朝上下方向延伸且一端被連接於蓋體承座13b之下表面的管部19a、以及被設置於管部19a之一端側之作為緊固部的接頭19b所構成。管部19a之內側的空間連通於蓋體承座13b的上表面側。孔13c在蓋體13a構成被形成為與管部19a同心,且供分佈式熱電偶20朝上插通至反應管11內的開口19c。管部19a係在插通方向上具有固定之直徑的圓管。管部19a的內徑較孔13c的直徑小。在接頭19b的外周部,為了將分佈式熱電偶20加以緊固,可設置供蓋形螺帽(接合螺帽)緊固的公螺絲或凸緣等。在接頭19b的內周,對應於為了將與分佈式熱電偶20之間氣密地加以密封的後述之O形環32,可設置錐面或階差。Hereinafter, the installation of the
如圖3(a)所示,治具31藉由石英等之非金屬被形成為筒形狀,且如圖3(b)所示般,覆蓋埠口19之開口19c的內表面,可從密封蓋體13之上方的反應管11側裝接於埠口19。治具31具有被間隙嵌入於管部19a之內側的筒狀部31a、及相較於管部19a之內側之形狀更大地被形成於筒狀部31a之一端的卡止部31b。例如,筒狀部31a係在插通方向上具有固定之直徑的圓管,且筒狀部31a的外徑被構成為較管部19a的內徑小。卡止部31b係在插通方向上具有固定之直徑的圓管,且卡止部31b的外徑被構成為較管部19a的內徑大。As shown in Fig. 3(a), the
卡止部31b的下表面被構成為與蓋體承座13b或埠口19的上表面抵接。藉此,治具31不會朝下脫落。治具31其筒狀部31a的長度與埠口19的管部19a為相同程度。治具31的筒狀部31a及卡止部31b的內徑被構成為較分佈式熱電偶20的保護管21大,且較保護管21之大徑部21a的外徑小。卡止部31b之插通方向的長度被構成較蓋體13a之插通方向的長度長。再者,當卡止部31b存在有與反應管11接觸之可能的情形時,亦可切缺卡止部31b之一部分。The lower surface of the locking
首先,如圖4所示,治具31從蓋體13a之孔13c的上方被插入埠口19。藉此,開口19c(管部19a)之內表面由治具31所覆蓋。在治具31的筒狀部31a被插入埠口19,並藉由卡止部31b被卡止於埠口19時,筒狀部31a之被插入埠口19側之前端(下端)的上下方向上的位置,係與埠口19的管部19a下端相同或位於較下端更下方。First, as shown in FIG. 4, the
其次,如圖5所示,保護管21從埠口19之下方被插入治具31的筒狀部31a內,並以突出於反應管11內之方式朝上方推入。此時,由於埠口19的管部19a與密封蓋體13之孔13c的內表面由治具31所覆蓋,因此保護管21不會與埠口19及密封蓋體13發生摩擦。Next, as shown in FIG. 5, the
然後,如圖6所示,被插入於埠口19的治具31,在分佈式熱電偶20要被裝接於埠口19時,藉由抵接於保護管21之粗度連續地擴大的錐部21c,而與分佈式熱電偶20一起被提起,治具31的卡止部31b脫離孔13c並且筒狀部31a之一部分脫離埠口19之管部19a的內表面。被插入至固定位置的分佈式熱電偶20,藉由接頭19b被緊固於埠口19。此時,分佈式熱電偶20藉由蓋形螺帽等而被維持於固定位置,而大徑部21a與接頭19b之內周成為間隙嵌入,藉由被設置於蓋形錐部21c的O形環32抵接於在接頭19b所設置的錐面,可保持分佈式熱電偶20與接頭19b之間的氣密性。再者,以接近大氣壓的條件被進行校正之情形時,則不需要O形環32與在接頭19b所設置的錐面。又,治具31的上推除了治具31直接抵接於錐部21c的方法之外,亦包含有使O形環32而抵接的方法。如此,在分佈式熱電偶20要被裝接於埠口19時,治具31一方面筒狀部31a之一部分脫離作為開口之埠口19之管部19a的內表面,另一方面另一部分則滯留於管部19a的內表面。Then, as shown in FIG. 6, the
當運用裝置時,可取代圖3至圖6所示之蓋體13a,而使用不具有孔13c的蓋體,藉此可使金屬完全不會從爐口露出。或者,亦可裝接封閉孔13c之非金屬製的栓。再者,密封蓋體13並不僅限於分離成維持氣密的蓋體與確保機械強度的蓋體承座者,亦可以金屬一體地形成。於該情形時,藉熔接而被連接於密封蓋體13的埠口19,可藉由被裝接於接頭19b之氣密性的蓋而完全地加以封閉。When using the device, the
再者,本發明並非被限定於上述之各實施形態者,當然可在不脫離其主旨的範圍內進行各種變更。例如,大徑部21a與錐部21c並非被限定於與小徑部21b(分佈式熱電偶20)一體地形成者,亦包含以套圈(ferrule)等之態樣而個別地被準備者。在要裝接於埠口19時可與大徑部21a同樣地發揮功能,且與分佈式熱電偶20被固定為一體的套圈,可視為其構成大徑部21a。又,分佈式熱電偶20並非被限定於在運用時被卸除者,亦可在運用中仍與治具31一起被留在反應管11內,使藉此所測定到之內部溫度被利用於高精度的溫度控制。In addition, the present invention is not limited to the above-mentioned embodiments, and of course various changes can be made without departing from the scope of the gist. For example, the large-
又,於上述之實施形態中,雖已對處理被實施於晶圓的情形進行說明,但處理對象既可為晶圓以外的基板,亦可為光罩(photomask)與印刷電路板、液晶面板、光碟或磁碟等。 又,本發明不僅可應用於半導體製造裝置,亦可應用於如LCD製造裝置般之對玻璃基板進行處理的裝置、以及其他基板處理裝置。基板處理的處理內容不僅為CVD(化學氣相沉積法)、PVD(物理氣相沉積法)、形成氧化膜、氮化膜、含金屬膜等之成膜處理,亦可為曝光處理、微影、塗佈處理等。In addition, in the above-mentioned embodiment, although the case where the processing is performed on the wafer has been described, the processing object may be a substrate other than the wafer, a photomask, a printed circuit board, or a liquid crystal panel. , CD or floppy disk, etc. In addition, the present invention can be applied not only to semiconductor manufacturing devices, but also to devices that process glass substrates such as LCD manufacturing devices, and other substrate processing devices. Substrate processing includes not only CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), oxide film, nitride film, metal-containing film, etc., but also exposure processing and photolithography. , Coating treatment, etc.
1:基板處理裝置
10:處理爐
11:反應管(處理容器)
12:加熱器單元
13:密封蓋體(基座)
13a:蓋體
13b:蓋體承座
13c:圓形孔
14:晶舟
15:加熱器熱電偶
16:閘流體
17:控制器
18:爐口
19:埠口
19a:管部
19b:接頭
20:分佈式熱電偶(溫度測定器)
21:保護管
21c:蓋形錐部
22a、22b:熱電偶線
26:端子連接器
27:端子台(連接器)
28:鐵氟龍蓋
29:補償導線
31:治具
31a:筒狀部
31b:卡止部
32:O形環
100:基板1: Substrate processing equipment
10: Treatment furnace
11: Reaction tube (processing container)
12: heater unit
13: Sealing cover (base)
13a:
圖1係本發明實施形態中基板處理裝置之垂直剖視圖。 圖2係表示本發明實施形態之分佈式熱電偶(profile thermocouple)的縱剖視圖。 圖3(a)係表示本發明實施形態之治具的立體圖,而圖3(b)係說明圖2所示之分佈式熱電偶之安裝部的圖。 圖4係表示將圖3(a)所示之治具裝接於圖3(b)所示之安裝部之狀態的圖。 圖5係表示將圖2所示之分佈式熱電偶開始插入圖4所示之安裝部之狀態的圖。 圖6係表示圖2所示之分佈式熱電偶裝接於圖4所示之安裝部之狀態的圖。Fig. 1 is a vertical cross-sectional view of a substrate processing apparatus in an embodiment of the present invention. Fig. 2 is a longitudinal cross-sectional view showing a profile thermocouple according to an embodiment of the present invention. FIG. 3(a) is a perspective view showing the jig of the embodiment of the present invention, and FIG. 3(b) is a diagram illustrating the installation part of the distributed thermocouple shown in FIG. 2. Fig. 4 is a diagram showing a state where the jig shown in Fig. 3(a) is attached to the mounting part shown in Fig. 3(b). Fig. 5 is a diagram showing a state where the distributed thermocouple shown in Fig. 2 is started to be inserted into the mounting part shown in Fig. 4. Fig. 6 is a diagram showing a state in which the distributed thermocouple shown in Fig. 2 is attached to the mounting part shown in Fig. 4.
11:反應管(處理容器) 11: Reaction tube (processing container)
13a:蓋體 13a: Lid
13b:蓋體承座 13b: Lid holder
19:埠口 19: Port
19a:管部 19a: Pipe Department
19b:接頭 19b: Connector
20:分佈式熱電偶(溫度測定器) 20: Distributed thermocouple (temperature detector)
21:保護管 21: Protection tube
31:治具 31: Fixture
31a:筒狀部 31a: cylindrical part
31b:卡止部 31b: Locking part
32:O形環 32: O-ring
Claims (13)
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JP2020-037321 | 2020-03-04 |
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JP2000031062A (en) * | 1998-07-09 | 2000-01-28 | Kokusai Electric Co Ltd | Furnace temperature measuring instrument |
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US7465086B1 (en) * | 2005-03-05 | 2008-12-16 | Foreman Instrumentation & Controls, Inc. | Adjustable length thermowell |
JP2008096215A (en) * | 2006-10-10 | 2008-04-24 | Kawasaki Precision Machinery Ltd | Sheathed thermocouple for measuring temperature in high pressure domain, and its manufacturing method |
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