TW202137596A - Structure and method of improving photoelectric conversion efficiency of perovskite solar cell by mixed agins2 and co - Google Patents

Abstract

The invention provides a structure and a method for improving the photoelectric conversion efficiency of a perovskite solar cell by mixing AgInS2 and Co, mainly by infiltrating the active layer with a silver indium sulfur quantum dot (AgInS2 at a ratio of 0.15 mg / mL)., Can increase the internal coverage of perovskite solar cells, reduce light absorption loss, and optimize the surface grain gap between each layer of the perovskite solar cells can be tight; and in the hole transport layer (1% mol% Co: NiOx) By doping cobalt with 1% mol% (mol%) in nickel oxide (1% mol% Co: NiOx), the carrier mobility of each layer of material can be greatly improved, and the electron hole can be reduced. Combine the probability, and then achieve the structure to improve the photoelectric conversion efficiency of perovskite solar cells.

Description

Structure and method for mixing AgInS2 and Co to improve photoelectric conversion efficiency of perovskite solar cell

The invention relates to a structure and method for mixing AgInS2 and Co to improve the photoelectric conversion efficiency of a perovskite solar cell, and in particular to a method for increasing the internal coverage of the perovskite solar cell, reducing light absorption loss, and optimizing the perovskite The surface grains between each layer of the solar cell are relatively compact, and the carrier mobility of the materials of each layer is improved, thereby enabling the present invention to achieve a structure that improves the photoelectric conversion efficiency of the perovskite solar cell.

According to, in recent years, the emergence of perovskite solar cells has the advantages of high efficiency and low cost, and has become one of the most competitive solar materials at present. The photoelectric conversion efficiency of its components depends on the perovskite active layer. The surface grain morphology, the surface roughness between each layer and the carrier mobility of the materials of each layer, etc., so that the traditional perovskite solar cell has a lot of room for improvement.

Therefore, how to develop a more ideal and practical innovative structure in response to the problems of the above-mentioned perovskite solar cells is what consumers are eagerly awaiting, and it is also the goal and direction for the relevant industry to strive for breakthroughs in research and development. In view of this, the creator has been engaged in the manufacturing, development and design of related products for many years. Aiming at the above goals, after detailed design and careful evaluation, he finally has a practical invention.

That is, the main purpose of the present invention is to provide a structure and method for mixing AgInS2 and Co to improve the photoelectric conversion efficiency of perovskite solar cells; the problem to be solved is for the conventional perovskite active layer There is a lot of room for improvement and breakthroughs in the surface grain morphology, the surface roughness between each layer and the carrier mobility of the materials of each layer.

The technical features to solve the problem are mainly by including an anode layer (ITO Glass), the anode layer is made of an ITO glass material; a hole transport layer (1% mol% Co: NiOx), a coating It is set on the upper end surface of the anode layer, wherein the hole transport layer contains a cobalt (Co), and the cobalt (Co) is doped in nickel oxide (1% mol%) at a ratio of 1% mol% Co: NiOx) is mixed; an active layer (Perovskite: AgInS ₂ ), which is laid on the upper end surface of the hole transport layer, the active layer contains a plurality of perovskite (Perovskite) and a plurality of silver indium sulfur quantum Dots (AgInS ₂ ) are mixed; wherein the silver indium sulfur quantum dots (AgInS ₂ ) are mixed in the active layer at a ratio of 0.15 mg/mL; an electron transport layer (PC61BM) is laid on the active layer The upper end surface of the layer; a cathode layer (Ag), the cathode layer is arranged on the upper end surface of the electron transport layer, and the cathode layer includes a silver layer (Ag);

With this innovative and unique design, the present invention uses silver indium sulphur quantum dots (AgInS ₂ at a ratio of 0.15 mg/mL) to be mixed in the active layer, which can increase the internal coverage of the perovskite solar cell and reduce the light absorption loss. , And optimize the surface grain gap between each layer of the perovskite solar cell to be tighter; and in the hole transport layer (1% mol% Co: NiOx), cobalt is used in the ratio of 1% mohr percentage (mol%) Doping in nickel oxide (1%mol%Co: NiOx) can greatly increase the carrier mobility of each layer of material, reduce the recombination rate of electron holes, and achieve a structure that improves the photoelectric conversion efficiency of perovskite solar cells By.

10: Anode layer

21: Nickel oxide

22: Cobalt

30: active layer

31: Perovskite

32: Silver indium sulfur quantum dots (AgInS2)

40: electron transport layer

50: Cathode layer

51: Silver layer

Figure 1: is a cross-sectional view of the present invention.

Figure 2: The external quantum efficiency diagram of this embodiment.

Figure 3: The J-V curve of this embodiment.

The invention provides a structure for mixing AgInS2 and Co to improve the photoelectric conversion efficiency of a perovskite solar cell, including:

An anode layer (ITO Glass) (10), the anode layer (10) is made of an ITO glass material;

A hole transport layer (1% mol% Co: NiOx) (20) is arranged on the upper end surface of the anode layer (10), wherein the hole transport layer (20) contains a cobalt (Co) (22) , The cobalt (Co) is mixed with nickel monoxide (1% mol% Co: NiOx) (21) at a ratio of 1% mol% (mol%);

An active layer (Perovskite: AgInS ₂ ) (30) is arranged on the upper end surface of the hole transport layer (20). The active layer (30) includes plural perovskite (Perovskite) (31) and plural Silver indium sulfur quantum dots (AgInS ₂ ) (32) are mixed; wherein the silver indium sulfur quantum dots (AgInS ₂ ) (32) is mixed in the active layer (30) at a ratio of 0.15 mg/mL;

An electron transport layer (PC61BM) (40) is arranged on the upper end surface of the active layer (30);

A cathode layer (Ag) (50), the cathode layer (50) is arranged on the upper end surface of the electron transport layer (40), the cathode layer (50) is composed of a silver layer (Ag) (51) Constructor.

The invention also provides a perovskite solar cell doped with AgInS2 and Co Methods of photoelectric conversion efficiency include:

An anode layer (ITO Glass) (10), the anode layer (10) is made of an ITO glass material, is etched, cleaned for later use, and placed in ultraviolet light for surface treatment for 10 minutes;

A hole transport layer (1% mol% Co: NiOx) (20) is arranged on the upper end surface of the anode layer (10), and the hole transport layer (20) contains a cobalt (Co) (22) , The cobalt (Co) (22) is doped with nickel oxide (1% mol% Co: NiOx) (21) at a ratio of 1% mol% (mol%) to form a mixed solution; the hole transmission The layer (20) is covered on the anode layer (10). The end surface covering method is by rotating the above-mentioned mixed solution on the surface of the anode layer (10) at 5000 rpm and 30 seconds. After the coating is completed, it is placed on the surface Thermal annealing on the heating plate at 140°C for 10 minutes to make the hole transport layer (20) appear as a solidified film on the surface of the anode layer (10);

An active layer (Perovskite: AgInS ₂ ) (30) is arranged on the upper end surface of the hole transport layer (20). The active layer (30) includes plural perovskite (Perovskite) (31) and plural Silver indium sulfur quantum dots (AgInS ₂ ) (32) are mixed; wherein the silver indium sulfur quantum dots (AgInS ₂ ) (32) is mixed in the active layer (30) at a ratio of 0.15 mg/mL; The active layer (Perovskite: AgInS ₂ ) (30) covered on the upper end surface of the hole transport layer (20) is by rotating the above-mentioned mixture at two speeds: (1000 rpm, 30 seconds; 5000 rpm, 20 seconds) ) Spin-coated a mixture of Perovskite (31) and silver indium sulphur quantum dots (AgInS ₂ ) (32) with different concentration ratios at a speed of 1:0.15 on the surface of the hole transport layer (20) After the coating is completed, place it on a hot plate for thermal annealing at 120°C for 15 minutes, so that the active layer (30) is a cured film on the surface of the hole transport layer (20);

An electron transport layer (PC61BM) (40) is laid on the upper end surface of the active layer (30); the method of covering is by using the electron transport layer (40) mixture at 1250rpm for 45 seconds It is spin-coated on the surface of the active layer (30) at a high speed. After the coating is completed, there is no need for thermal annealing. Just leave it to dry naturally for about 40-60 minutes, so that the electron transport layer (40) appears on the surface of the active layer (30). Cured film

A cathode layer (Ag) (50), the cathode layer (50) is arranged on the upper end surface of the electron transport layer (40), the cathode layer (50) is composed of a silver layer (Ag) (51) The above-mentioned covering method is to thermally evaporate the silver layer (Ag) (51) on the surface of the electron transport layer (40) to complete the device maker.

Please refer to Figure 2, which is an external quantum efficiency graph generated by experimental data of an embodiment of the present invention. The absorption wavelength of the active layer (30) is about 400~800nm, and there is a strong absorption band around 600nm. Therefore, silver indium sulfur quantum dots (AgInS ₂ ) (32) mixed in the active layer (30) at a ratio of 0.15 mg/mL can produce a maximum absorbance increase of 70%. The reason is that silver indium sulfur quantum dots are added. (AgInS ₂ ) (32) and cobalt (22) can improve the surface morphology of the active layer (30) and increase its coverage, reduce light absorption loss, so that the perovskite film can effectively absorb light to increase the absorption and absorption range , And increase the absorbance;

Please refer to Figure 3, which is the JV curve generated by the experimental data of the embodiment of the present invention. It can be found that the best conversion efficiency is that the addition of silver indium sulfur quantum dots (AgInS ₂ ) (32) has the highest photoelectric conversion efficiency It is 12.2%, which is about 50% increase compared with no addition, so the open circuit voltage is significantly improved, and the overall photoelectric conversion efficiency is improved.

In this way, the present invention uses silver indium sulfur quantum dots (AgInS ₂ ) (32) mixed in the active layer (30) at a ratio of 0.15 mg/mL, and in the hole transport layer (1% mol% Co: NiOx) Cobalt is doped with nickel oxide (1% mol% Co: NiOx) at a ratio of 1% mol% (mol%), thereby increasing the internal coverage of perovskite solar cells, reducing light absorption loss, and The optimization of the surface grain gap between each layer of the perovskite solar cell is tighter, and the carrier mobility of the materials of each layer is improved, so that the present invention can achieve a structure that improves the photoelectric conversion efficiency of the perovskite solar cell.

Summarizing the above description, the design of the above-mentioned structure of the present invention can effectively overcome the shortcomings faced by the conventional invention, and further has the above-mentioned numerous advantages and practical values. Therefore, the present invention is a creative and extremely creative invention, and it is in the same way. There is no identical or similar product creation or public use in the technical field, so the present invention has met the requirements of "novelty" and "progressiveness" of invention patents, and an application is filed in accordance with the law.

10: Anode layer

21: Nickel oxide

22: Cobalt

30: active layer

31: Perovskite

32: Silver indium sulfur quantum dots (AgInS ₂ )

40: electron transport layer

50: Cathode layer

51: Silver layer

Claims (2)

A structure for mixing AgInS2 and Co to improve the photoelectric conversion efficiency of perovskite solar cells includes: An anode layer (ITO Glass), the anode layer is made of an ITO glass material; A hole transport layer (1% mol% Co: NiOx) is arranged on the upper end surface of the anode layer, wherein the hole transport layer contains a cobalt (Co), the cobalt (Co) is 1% Mohr The percentage (mol%) is mixed with nickel oxide (1% mol% Co: NiOx); An active layer (Perovskite: AgInS ₂ ) is laid on the upper end surface of the hole transport layer. The active layer contains a mixture of Perovskite and AgInS ₂ ; Wherein the silver indium sulfur quantum dots (AgInS ₂ ) is mixed in the active layer at a ratio of 0.15 mg/mL; An electron transport layer (PC61BM) is laid on the upper end surface of the active layer; A cathode layer (Ag), the cathode layer is arranged on the upper end surface of the electron transport layer, and the cathode layer includes a silver layer (Ag). A method for mixing AgInS2 and Co to improve the photoelectric conversion efficiency of perovskite solar cells includes: An anode layer (ITO Glass), the anode layer is made of an ITO glass material, after etching, cleaned for use, and put in ultraviolet light for surface treatment for 10 minutes; A hole transport layer (1% mol% Co: NiOx) is arranged on the upper end surface of the anode layer. The hole transport layer contains cobalt (Co), and the cobalt (Co) is moly Doped with nickel oxide (1% mol% Co: NiOx) in the proportion of mol% (mol%) to form a mixed solution; the hole transport layer is covered on the anode layer by The above-mentioned mixed solution was spin-coated on the surface of the anode layer at 5000 rpm and 30 seconds. After coating, it was placed on a hot plate and thermally annealed at 140°C for 10 minutes to make the hole transport layer solidify on the surface of the anode layer.状膜; An active layer (Perovskite: AgInS ₂ ) is laid on the upper end surface of the hole transport layer. The active layer contains a mixture of Perovskite and AgInS ₂ ; Wherein the silver indium sulfur quantum dots (AgInS ₂ ) is mixed in the active layer at a ratio of 0.15 mg/mL; the active layer (Perovskite: AgInS ₂ ) is placed on the upper end surface of the hole transport layer The method is by rotating the above-mentioned mixed solution at two rotation speeds: (1000rpm, 30 seconds; 5000rpm, 20 seconds). ₂ ) The 1:0.15 mixture is placed on the surface of the hole transport layer, and after the coating is completed, it is placed on a hot plate and thermally annealed at 120°C for 15 minutes to make the active layer appear as a cured film on the surface of the hole transport layer; An electron transport layer (PC61BM) is laid on the upper end surface of the active layer; the method of covering is by rotating the electron transport layer mixture on the surface of the active layer at 1250 rpm for 45 seconds. After the cloth is finished, there is no need for thermal annealing, just leave it to dry naturally for about 40-60 minutes, so that the electron transport layer becomes a cured film on the surface of the active layer; A cathode layer (Ag), the cathode layer is laid on the upper end surface of the electron transport layer, the cathode layer is composed of a silver layer (Ag), and the covering method is to cover the silver layer (Ag) ) Thermal vapor deposition on the surface of the electron transport layer completes the device maker.

Images